CN101881664A - Air adiabatic diaphragm type infrared sensor - Google Patents
Air adiabatic diaphragm type infrared sensor Download PDFInfo
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- CN101881664A CN101881664A CN2009101072716A CN200910107271A CN101881664A CN 101881664 A CN101881664 A CN 101881664A CN 2009101072716 A CN2009101072716 A CN 2009101072716A CN 200910107271 A CN200910107271 A CN 200910107271A CN 101881664 A CN101881664 A CN 101881664A
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Abstract
The invention relates to the field of infrared sensors, and provides an air adiabatic diaphragm type infrared sensor, which comprises a silicon substrate and a sensor photosensitive area. The sensor photosensitive area comprises a supporting layer, an upper electrode, a lower electrode, a pyroelectric diaphragm, a passivating layer and an infrared absorbing layer. Cavities are formed on the silicon substrate. Air in each cavity forms an adiabatic layer. A bridge leg is arranged on each cavity. The sensor photosensitive area is supported on the cavity through the bridge leg in a floating way, so the photosensitive area is not in direct contact with the substrate and air in the cavities is used as the adiabatic layer. Thereby, the heat loss between the sensor and the substrate is low, the sensitivity of the sensor is improved and the sensor is particularly suitable for the high-sensitivity infrared detection field.
Description
Technical field
The present invention relates to field of infrared sensors, especially relate to a kind of diaphragm type infrared sensor of air adiabatic.
Background technology
Pyroelectric infrared sensor is a kind of infrared detector commonly used, is widely used in non-contact switch and the burglar alarm equal controller, and in automatic control, electric appliance energy-saving, fields such as security protection have broad application prospects.At safety-security area, for suppressing the interference of hot and cold air or environment temperature, improve the environmental suitability of sensor to sensor, reduce wrong report, adopt two sensitive units and even the design of four sensitive units usually.The design of so-called two sensitive unit is meant that this sensor comprises the unit infrared eye of two antithesis, has positive and negative susceptibility respectively.When hot and cold air interference or variation of ambient temperature, these two antithesis cell sensor temperature together change the positive and negative counteracting of output signal, the output of alarm free pulse signal, and when target object such as human body moved, positive negative signal was having a timing difference therefore can't offset, the output of warning pulse signal.So-called quaternary infrared eye is equipped with the infrared sensor of four antithesis in being meant, detector is designed to only just trigger warning when each single-element detector detects signal, and reliability is higher.
At present, the most ceramic body material that adopt of polynary pyroelectric infrared sensor on the market, the ceramic body material need pass through machine cuts usually, grinds to be thinned to tens micron thickness again at upper and lower surface making metal electrode, and operation is loaded down with trivial details, and cost is higher.The ceramic body material is thick to reach tens microns, and the device thermal capacitance is bigger, and speed of response raising is restricted.
Summary of the invention
The object of the present invention is to provide a kind of diaphragm type infrared sensor of air adiabatic, this transducer sensitivity and reliability height.
The present invention realizes like this, a kind of air adiabatic diaphragm type infrared sensor is provided, comprise silicon substrate and on the sensing photosensitive area, this sensing photosensitive area comprises supporting layer, upper/lower electrode, electric heating film, passivation layer and infrared absorption layer, wherein: be formed with cavity on the described silicon substrate, air in this cavity forms heat insulation layer, and cavity is provided with the bridge leg, and described photosensitive sensing unit is supported and suspended on the cavity by the bridge leg.
With respect to prior art, beneficial effect of the present invention is: the present invention is by forming cavity on substrate, the bridge leg is set on this cavity, the photosensitive district of described sensor is arranged on this bridge leg, thereby the photosensitive area is not directly to contact with substrate, as insulation course, makes the thermal loss between sensor and substrate little with the air in the cavity, the sensitivity of sensor and reliability height are highly suitable for highly sensitive field of detecting.
Description of drawings
Fig. 1 is the sensor construction synoptic diagram of first embodiment of the invention;
Fig. 2 is that the sensor of first embodiment of the invention cuts open and shows structural representation;
Fig. 3 is the sensor construction synoptic diagram of second embodiment of the invention;
Fig. 4 is the sensor process synoptic diagram of the embodiment of the invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
As depicted in figs. 1 and 2, it is the first embodiment of the present invention, it is the air adiabatic diaphragm type infrared sensor of double base structure, it mainly is made of following components: silicon substrate 1, supporting layer 2, upper/ lower electrode layer 5 and 3, electric heating film 4, passivation layer 6, infrared absorption layer 7, heat insulation cavity 8 constitutes.Supporting layer 2, upper/ lower electrode layer 5,3, electric heating film 4, the photosensitive district 10 of sensor that passivation layer 6 and infrared absorption layer 7 constitute is supported and suspended on the cavity 8 of silicon substrate etching formation by bridge leg 9.In the cavity 8 is air, is mainly used in the thermal conductance that reduces between photosensitive district 10 of sensor and the substrate 1, improves the infrared acquisition performance of sensor.
It is 0.1 micron-5 microns that the described air adiabatic diaphragm type double base of embodiment of the invention pyroelectric infrared sensor, this infrared sensor utilize electric heating film, the infrared radiation of sensed object object incident.Different with ceramic body material or other film-type pyroelectric infrared sensors is, in the photosensitive district of the sensor of present embodiment suspension support on the cavity 8 that the silicon substrate etching forms, cavity 8 dark 100 microns-500 microns, air layer in the cavity 8 is as the heat insulation layer between device photosensitive area and substrate, and the device of the embodiment of the invention is configured to the double base structure to improve the adaptive faculty of sensor to hot and cold air and environment temperature.
Among Fig. 1 and Fig. 2, sensor comprises the pyroelectric unit detector of the positive and negative sensitivity of 2 series connection, when hot and cold air or variation of ambient temperature, and the identical but opposite in sign of this two single-element detector response signals size, cancel each other the output of sensor alarm free signal.When the big human body of human body or other, these two sensors are response simultaneously, and signal can't interconnectedly be offset, so output alarm signal.Comprise two double base pyroelectric infrared sensors among Fig. 2, in circuit design, when having only these two sensors that signal output is all arranged, circuit is output alarm signal, has further reduced system's wrong report.
Acting as of polynary each rete of pyroelectric infrared sensor of diaphragm type of the present invention: infrared absorption layer 7 is used to improve the absorption efficiency of sensor to the infrared radiation of target incident, adopts the dark fund film more; Absorb behind the infrared radiation of target emanation self temperature when sensor and raise, electric heating film layer 4 is experienced sensor temperature and is changed, and discharges electric signal; For electric signal is drawn, electrode rete 5 and 3 have all been prepared in the top and bottom of electric heating film layer 4; The photosensitive district 10 of sensor is suspended on the cavity 8 of silicon substrate 1 etching formation by long and narrow bridge leg 9, for improving the device physical strength, has increased silicon nitride support layer 2 under metal electrode; Passivation layer 6 mainly is in order to prevent pyroelectricity material performance degradation under the influence of encapsulation atmosphere; For reducing the thermal conductance of 1 of photosensitive district 10 of sensor and substrate, sensor sensing district 10 utilizes long and narrow bridge leg 9 suspension support on the cavity 8 that silicon substrate 1 etching forms, thereby 10 bottoms, sensor sensing district just directly do not contact with substrate 1, effectively reduce the thermal conductance between sensor and substrate.This cavity is formed by special crystal orientation wet method or plasma dry etching, and height can reach hundreds of microns, and thermal insulation effect is splendid.
As shown in Figure 3, it is the second embodiment of the present invention, and present embodiment only describes the different piece with first embodiment in detail, and same section repeats no more.
Fig. 3 is the infrared sensor of air adiabatic diaphragm type quad arrangement, this quaternary sensor comprises two double base structures, in circuit design, when having only these two sensors that signal output is all arranged, circuit is output alarm signal, has further reduced system's wrong report, adopts suitable driving circuit, the mistake detectivity of this structure is lower, can be applied to low false alarm and use.
As shown in Figure 4, it is the work flow synoptic diagram of described double base of the embodiment of the invention or quaternary air adiabatic diaphragm type infrared sensor, and its technological process is briefly described below:
Substrate cleans: substrate 1 multiselect monocrystalline silicon piece, also can select quartz or other materials substrate for use, and it is standby that substrate cleans the back, shown in Fig. 4 (a).
Supporting layer 2 deposits: utilize low pressure gas phase deposition (LPCVD) or plasma activated chemical vapour deposition technology (PECVD) preparation supporting layer 2, supporting layer 2 multiselects are with the laminated film of silicon dioxide or silicon nitride film or silicon dioxide and silicon nitride, its thickness generally is controlled between the 0.5-2 micron, shown in Fig. 4 (b).
Electric heating film layer 4 preparation and etching: utilize sol-gel or sputtering method to prepare electric heating film 4 on bottom electrode film 3, about 1 micron of thickness is shown in Fig. 4 (d).For improving pyroelectricity rete characteristic, often need under higher temperature, anneal, temperature is: 450-600 ℃, integrated for ease of sensor and treatment circuit, film annealing can be adopted the laser short annealing, and the treatment circuit regional temperature is controlled in 450 degree.
Make the infrared sensor of the air adiabatic diaphragm type quad arrangement of described double base of the embodiment of the invention or quaternary by above-mentioned technology, adopt the air of 8 li of cavitys to make insulation course, improve the adaptive faculty of sensor hot and cold air and environment temperature.Longitudinal thickness owing to sensor is 2 microns-5 microns simultaneously, so the thermal capacitance of this sensor is very little, and response speed is fast.
Claims (5)
1. air adiabatic diaphragm type infrared sensor, comprise silicon substrate and on the sensing photosensitive area, this sensing photosensitive area comprises supporting layer, upper/lower electrode, electric heating film, passivation layer and infrared absorption layer, it is characterized in that: be formed with cavity on the described silicon substrate, air in this cavity forms heat insulation layer, cavity is provided with the bridge leg, and described photosensitive sensing unit is supported and suspended on the cavity by the bridge leg.
2. air adiabatic diaphragm type infrared sensor according to claim 1 is characterized in that: described sensor is double base or quad arrangement.
3. air adiabatic diaphragm type infrared sensor according to claim 1 and 2 is characterized in that: described cavity depth is 100 microns-500 microns.
4. air adiabatic diaphragm type infrared sensor according to claim 3 is characterized in that: the thickness of described electric heating film is 0.1 micron-5 microns.
5. air adiabatic diaphragm type infrared sensor according to claim 4 is characterized in that: described sensor longitudinal thickness is 2 microns-5 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2009101072716A CN101881664A (en) | 2009-05-08 | 2009-05-08 | Air adiabatic diaphragm type infrared sensor |
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| CN2009101072716A CN101881664A (en) | 2009-05-08 | 2009-05-08 | Air adiabatic diaphragm type infrared sensor |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101975613A (en) * | 2010-09-30 | 2011-02-16 | 烟台睿创微纳技术有限公司 | Air heat-insulation film infrared sensor |
| WO2012071820A1 (en) * | 2010-12-01 | 2012-06-07 | 烟台睿创微纳技术有限公司 | Infrared detector and method of manufacture thereof and multi-band uncooled infrared focal plane |
| CN103076099A (en) * | 2013-01-23 | 2013-05-01 | 中国科学院微电子研究所 | Single-chip integrated infrared focal plane detector |
| CN112050949A (en) * | 2020-09-11 | 2020-12-08 | 京东方科技集团股份有限公司 | Sensor, manufacturing method and testing method thereof, and testing device |
| CN113023658A (en) * | 2021-03-04 | 2021-06-25 | 上海迈振电子科技有限公司 | Resonant micro-cantilever chip and preparation method thereof |
| CN113659028A (en) * | 2021-02-01 | 2021-11-16 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113659027A (en) * | 2021-02-01 | 2021-11-16 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113023658B (en) * | 2021-03-04 | 2024-05-28 | 上海迈振电子科技有限公司 | Resonant micro-cantilever beam chip and preparation method thereof |
-
2009
- 2009-05-08 CN CN2009101072716A patent/CN101881664A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101975613A (en) * | 2010-09-30 | 2011-02-16 | 烟台睿创微纳技术有限公司 | Air heat-insulation film infrared sensor |
| WO2012071820A1 (en) * | 2010-12-01 | 2012-06-07 | 烟台睿创微纳技术有限公司 | Infrared detector and method of manufacture thereof and multi-band uncooled infrared focal plane |
| CN103076099A (en) * | 2013-01-23 | 2013-05-01 | 中国科学院微电子研究所 | Single-chip integrated infrared focal plane detector |
| CN103076099B (en) * | 2013-01-23 | 2015-09-16 | 中国科学院微电子研究所 | Single-chip integration infrared focal plane detector |
| CN112050949A (en) * | 2020-09-11 | 2020-12-08 | 京东方科技集团股份有限公司 | Sensor, manufacturing method and testing method thereof, and testing device |
| CN113659028A (en) * | 2021-02-01 | 2021-11-16 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113659027A (en) * | 2021-02-01 | 2021-11-16 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113023658A (en) * | 2021-03-04 | 2021-06-25 | 上海迈振电子科技有限公司 | Resonant micro-cantilever chip and preparation method thereof |
| CN113023658B (en) * | 2021-03-04 | 2024-05-28 | 上海迈振电子科技有限公司 | Resonant micro-cantilever beam chip and preparation method thereof |
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Application publication date: 20101110 |