ZA202206169B - High-voltage integrated circuit and control method thereof - Google Patents
High-voltage integrated circuit and control method thereofInfo
- Publication number
- ZA202206169B ZA202206169B ZA2022/06169A ZA202206169A ZA202206169B ZA 202206169 B ZA202206169 B ZA 202206169B ZA 2022/06169 A ZA2022/06169 A ZA 2022/06169A ZA 202206169 A ZA202206169 A ZA 202206169A ZA 202206169 B ZA202206169 B ZA 202206169B
- Authority
- ZA
- South Africa
- Prior art keywords
- integrated circuit
- control method
- voltage integrated
- voltage
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210227837.4A CN114337628B (zh) | 2022-03-10 | 2022-03-10 | 一种高压集成电路及其控制方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ZA202206169B true ZA202206169B (en) | 2023-03-29 |
Family
ID=81033317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ZA2022/06169A ZA202206169B (en) | 2022-03-10 | 2022-06-02 | High-voltage integrated circuit and control method thereof |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN114337628B (zh) |
| WO (1) | WO2023168825A1 (zh) |
| ZA (1) | ZA202206169B (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114337628B (zh) * | 2022-03-10 | 2022-06-10 | 华南理工大学 | 一种高压集成电路及其控制方法 |
| CN115529026B (zh) * | 2022-11-29 | 2023-03-14 | 广东汇芯半导体有限公司 | 一种高压集成电路 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3454360B2 (ja) * | 2001-05-02 | 2003-10-06 | オムロン株式会社 | 光電センサ |
| JP4339828B2 (ja) * | 2001-05-29 | 2009-10-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2006203568A (ja) * | 2005-01-20 | 2006-08-03 | Sharp Corp | スルーレート制御装置、出力バッファ及び情報処理装置 |
| JP2007243254A (ja) * | 2006-03-06 | 2007-09-20 | Matsushita Electric Ind Co Ltd | スイッチ素子駆動回路 |
| CN102055451B (zh) * | 2009-11-06 | 2013-11-06 | 北京众智同辉科技有限公司 | 零电流关断固体继电器 |
| CN101969304B (zh) * | 2010-09-09 | 2012-09-12 | 杭州士兰微电子股份有限公司 | 一种用于高压集成电路的脉冲发生电路及其方法 |
| DE112013007288B4 (de) * | 2013-08-01 | 2019-08-14 | Hitachi, Ltd. | Halbleitervorrichtung und Stromrichtvorrichtung |
| CN109804539B (zh) * | 2016-08-17 | 2020-12-15 | 株式会社电装 | 晶体管驱动电路和电动机驱动控制装置 |
| CN109828242B (zh) * | 2019-03-21 | 2024-05-10 | 中国电子科技集团公司第十四研究所 | 一种发射机控制保护系统 |
| CN113922638A (zh) * | 2021-11-18 | 2022-01-11 | 广东汇芯半导体有限公司 | 一种半导体驱动hvic |
| CN113949370A (zh) * | 2021-11-18 | 2022-01-18 | 广东汇芯半导体有限公司 | 一种高压集成电路 |
| CN113949250A (zh) * | 2021-11-18 | 2022-01-18 | 广东汇芯半导体有限公司 | 一种半导体器件及其控制方法 |
| CN114337628B (zh) * | 2022-03-10 | 2022-06-10 | 华南理工大学 | 一种高压集成电路及其控制方法 |
-
2022
- 2022-03-10 CN CN202210227837.4A patent/CN114337628B/zh active Active
- 2022-05-16 WO PCT/CN2022/092908 patent/WO2023168825A1/zh unknown
- 2022-06-02 ZA ZA2022/06169A patent/ZA202206169B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN114337628B (zh) | 2022-06-10 |
| CN114337628A (zh) | 2022-04-12 |
| WO2023168825A1 (zh) | 2023-09-14 |
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