ZA200804743B - Photovoltaic cell - Google Patents

Photovoltaic cell

Info

Publication number
ZA200804743B
ZA200804743B ZA200804743A ZA200804743A ZA200804743B ZA 200804743 B ZA200804743 B ZA 200804743B ZA 200804743 A ZA200804743 A ZA 200804743A ZA 200804743 A ZA200804743 A ZA 200804743A ZA 200804743 B ZA200804743 B ZA 200804743B
Authority
ZA
South Africa
Prior art keywords
photovoltaic cell
photovoltaic
cell
Prior art date
Application number
ZA200804743A
Other languages
English (en)
Inventor
Zeman Miroslav
Jongerden Gert Jan
Original Assignee
Helianthos Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helianthos Bv filed Critical Helianthos Bv
Publication of ZA200804743B publication Critical patent/ZA200804743B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035245—Superlattices; Multiple quantum well structures characterised by amorphous semiconductor layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
ZA200804743A 2005-12-02 2008-05-30 Photovoltaic cell ZA200804743B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05111611 2005-12-02

Publications (1)

Publication Number Publication Date
ZA200804743B true ZA200804743B (en) 2009-03-25

Family

ID=36123168

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA200804743A ZA200804743B (en) 2005-12-02 2008-05-30 Photovoltaic cell

Country Status (3)

Country Link
CN (1) CN101336489B (pt)
BR (1) BRPI0619150A2 (pt)
ZA (1) ZA200804743B (pt)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024507A (zh) * 2009-09-15 2011-04-20 迎辉科技股份有限公司 具有结晶的透明导电薄膜
CN103258872A (zh) * 2012-02-21 2013-08-21 厦门市三安光电科技有限公司 高效三结太阳能电池及其制作方法
JP6986349B2 (ja) 2014-05-27 2021-12-22 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd ｎ型超格子及びｐ型超格子を備える電子デバイス
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
KR102318317B1 (ko) 2014-05-27 2021-10-28 실라나 유브이 테크놀로지스 피티이 리미티드 반도체 구조물과 초격자를 사용하는 진보된 전자 디바이스 구조
KR102439708B1 (ko) 2014-05-27 2022-09-02 실라나 유브이 테크놀로지스 피티이 리미티드 광전자 디바이스
US11183655B2 (en) * 2016-08-31 2021-11-23 Nissan Motor Co., Ltd. Photovoltaic device
CN111200030B (zh) * 2018-11-19 2022-08-16 紫石能源有限公司 太阳能电池与其制作方法
CN111430474B (zh) * 2020-04-23 2021-12-28 成都先锋材料有限公司 薄膜、太阳能电池及其制备方法和装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2597662B1 (fr) * 1986-04-22 1988-06-17 Thomson Csf Photodiode pin realisee a partir de semi-conducteur amorphe
US6437233B1 (en) * 2000-07-25 2002-08-20 Trw Inc. Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor
CN2609190Y (zh) * 2003-02-25 2004-03-31 周庆明 一种特殊的非晶硅光电池

Also Published As

Publication number Publication date
CN101336489B (zh) 2012-07-18
CN101336489A (zh) 2008-12-31
BRPI0619150A2 (pt) 2011-09-20

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