WO2025251237A1 - Mems麦克风 - Google Patents

Mems麦克风

Info

Publication number
WO2025251237A1
WO2025251237A1 PCT/CN2024/097641 CN2024097641W WO2025251237A1 WO 2025251237 A1 WO2025251237 A1 WO 2025251237A1 CN 2024097641 W CN2024097641 W CN 2024097641W WO 2025251237 A1 WO2025251237 A1 WO 2025251237A1
Authority
WO
WIPO (PCT)
Prior art keywords
wall
limiting structure
mems microphone
diaphragm
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/097641
Other languages
English (en)
French (fr)
Inventor
赵转转
李博
王凯杰
张睿
陈宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AAC Technologies Holdings Shenzhen Co Ltd
Original Assignee
AAC Acoustic Technologies Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AAC Acoustic Technologies Shenzhen Co Ltd filed Critical AAC Acoustic Technologies Shenzhen Co Ltd
Priority to PCT/CN2024/097641 priority Critical patent/WO2025251237A1/zh
Priority to US19/001,523 priority patent/US20250380091A1/en
Publication of WO2025251237A1 publication Critical patent/WO2025251237A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • This utility model relates to the field of microphones, and more particularly to a MEMS microphone.
  • a traditional MEMS microphone includes a substrate with a cavity, a backplate disposed above the substrate, and a diaphragm disposed between the backplate and the substrate.
  • the cavity has a shape similar to the diaphragm. Under the action of impinging airflow, the diaphragm moves towards or away from the backplate.
  • the diaphragm moves away from the backplate without any obstruction, resulting in a large displacement of the diaphragm until it exceeds the limit displacement that the diaphragm material can withstand, causing the diaphragm to break and resulting in poor reliability of traditional MEMS microphones.
  • the purpose of this invention is to overcome the above-mentioned technical problems and provide a MEMS microphone that can improve reliability.
  • this utility model provides a MEMS microphone, including a substrate with a cavity, a back plate disposed above the substrate, and a diaphragm disposed between the back plate and the substrate.
  • the MEMS microphone also includes a limiting structure disposed in the cavity to limit the maximum displacement of the diaphragm away from the back plate, wherein the maximum displacement is not less than the normal operating displacement of the diaphragm away from the back plate.
  • the base includes a top wall, a bottom wall opposite to the top wall, and a surrounding wall connecting the top wall and the bottom wall and forming the cavity
  • the limiting structure includes a single connecting wall connected to the surrounding wall
  • the base includes a top wall, a bottom wall opposite to the top wall, and a surrounding wall connecting the top wall and the bottom wall and forming the cavity
  • the limiting structure includes at least two connecting walls connected to the surrounding wall and arranged intersectingly.
  • the at least two connecting walls intersect at the same point and form an equal intersection interval.
  • the base includes a top wall, a bottom wall opposite to the top wall, and a surrounding wall connecting the top wall and the bottom wall and forming the cavity.
  • the limiting structure is connected to the surrounding wall.
  • the limiting structure includes a top and a bottom opposite to the top. The top wall and the top are flush, and the bottom wall and the bottom are flush.
  • the substrate includes a top wall, a bottom wall opposite to the top wall, and a surrounding wall connecting the top wall and the bottom wall and forming the cavity.
  • the limiting structure is connected to the surrounding wall.
  • the limiting structure includes a top and a bottom opposite to the top. The top wall and the top are flush, and the bottom is closer to the diaphragm than the bottom wall.
  • the substrate includes a top wall, a bottom wall opposite to the top wall, and a surrounding wall connecting the top wall and the bottom wall and forming the cavity.
  • the limiting structure is connected to the surrounding wall.
  • the limiting structure includes a top and a bottom opposite to the top. The bottom wall and the bottom are flush. The top wall is closer to the diaphragm than the top.
  • the substrate includes a top wall, a bottom wall opposite to the top wall, and a surrounding wall connecting the top wall and the bottom wall and forming the cavity.
  • the limiting structure is connected to the surrounding wall.
  • the limiting structure includes a top and a bottom opposite to the top. The top wall is closer to the diaphragm relative to the top, and the bottom is closer to the diaphragm relative to the bottom wall.
  • the substrate and the limiting structure are integrally formed.
  • a limiting structure is provided in the cavity of the substrate to limit the maximum displacement of the diaphragm away from the back plate. This ensures that the displacement of the diaphragm away from the back plate does not exceed the limit displacement that the diaphragm material can withstand, thereby avoiding diaphragm damage caused by the displacement of the diaphragm away from the back plate exceeding the limit displacement that the diaphragm material can withstand, and improving the reliability of the MEMS microphone.
  • the maximum displacement of the diaphragm away from the back plate limited by the limiting structure is not less than the normal working displacement of the diaphragm away from the back plate, so setting the limiting structure will not affect the normal operation of the MEMS microphone.
  • Figure 1 is a cross-sectional view of the first type of MEMS microphone of this utility model
  • Figure 2 is a cross-sectional view of the combination of the substrate and the limiting structure of the first MEMS microphone of this utility model.
  • Figure 3 is a schematic diagram of the combined structure of the substrate and the limiting structure of the first MEMS microphone of this utility model
  • Figure 4 is a schematic diagram of the combined structure of the substrate and the limiting structure of the second type of MEMS microphone of this utility model
  • Figure 5 is a schematic diagram of the combined structure of the substrate and the limiting structure of the third MEMS microphone of this utility model.
  • Figure 6 is a cross-sectional view of the combination of the substrate and the limiting structure of the fourth MEMS microphone of this utility model.
  • Figure 7 is a cross-sectional view of the combination of the substrate and the limiting structure of the fifth MEMS microphone of this utility model.
  • Figure 8 is a cross-sectional view of the combination of the substrate and the limiting structure of the sixth MEMS microphone of this utility model.
  • the present invention provides a MEMS microphone 100, which includes a substrate 1 having a cavity 10, a back plate 2 disposed above the substrate 1, and a diaphragm 3 disposed between the back plate 2 and the substrate 1.
  • the base 1 includes a top wall 11, a bottom wall 12 opposite to the top wall 11, and a surrounding wall 13 connecting the top wall 11 and the bottom wall 12 and forming the cavity 10.
  • the MEMS microphone 100 also includes a limiting structure 4 disposed in the cavity 10 to limit the maximum displacement of the diaphragm 3 away from the back plate 2, wherein the maximum displacement is not less than the normal operating displacement of the diaphragm 3 away from the back plate 2.
  • the limiting structure 4 is connected to the enclosure wall 13.
  • the limiting structure 4 is not limited to being connected to the enclosure wall 13. Any form in which the limiting structure 4 can be formed within the cavity 10 is feasible.
  • the limiting structure 4 consists of two connecting walls 40 that are intersected and connected to the enclosure wall 13.
  • the two connecting walls 40 intersect to form four 90-degree intersecting intervals S1.
  • the limiting structure 4 includes a top 41 and a bottom 42 opposite to the top 41.
  • the top wall 11 is flush with the top 41
  • the bottom wall 12 is flush with the bottom 42.
  • the limiting structure 4 may also be a single connecting wall 40 connected to the enclosure 13; for example, as shown in FIG. 5, the limiting structure 4 may also be three connecting walls 40 connected to the enclosure 13 and arranged intersectingly, preferably, the three connecting walls 40 intersect at the same point and form six 60-degree intersection intervals S2. In other embodiments, the limiting structure 4 may further be three or more connecting walls 40 connected to the enclosure 13 and arranged intersectingly, preferably, the three or more connecting walls 40 intersect at the same point and form equal intersection intervals.
  • the limiting structure 4 may also be connected to the enclosure wall 13, the top wall 11 and the top 41 are flush, and the bottom 42 is closer to the diaphragm 3 relative to the bottom wall 12.
  • the limiting structure 4 may also be connected to the enclosure wall 13, the bottom wall 12 and the bottom 42 are flush, and the top wall 11 is closer to the diaphragm 3 than the top 41.
  • the limiting structure 4 may also be connected to the enclosure wall 13, the top wall 11 being closer to the diaphragm 3 relative to the top 41, and the bottom 42 being closer to the diaphragm 3 relative to the bottom wall 12.
  • the substrate 1 and the limiting structure 4 are integrally formed, and the limiting structure 4 is formed at the same time as the cavity 10. That is to say, the limiting structure 4 can be formed as part of the substrate forming the substrate 1.
  • a limiting structure is provided in the cavity of the substrate to limit the maximum displacement of the diaphragm away from the back plate. This ensures that the displacement of the diaphragm away from the back plate does not exceed the limit displacement that the diaphragm material can withstand, thereby avoiding diaphragm damage caused by the displacement of the diaphragm away from the back plate exceeding the limit displacement that the diaphragm material can withstand, and improving the reliability of the MEMS microphone.
  • the maximum displacement of the diaphragm away from the back plate limited by the limiting structure is not less than the normal working displacement of the diaphragm away from the back plate, so setting the limiting structure will not affect the normal operation of the MEMS microphone.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Micromachines (AREA)

Abstract

本实用新型的MEMS麦克风，包括具有空腔的基底、设置于所述基底上方的背板、设置于所述背板和所述基底之间的振膜、以及设置于所述空腔内用以限制所述振膜背离所述背板的最大位移的限位结构，所述最大位移不小于所述振膜背离所述背板的正常工作位移。本实用新型的MEMS麦克风的可靠性高。

Description

MEMS麦克风 技术领域
本实用新型涉及麦克风领域，尤其涉及一种MEMS麦克风。
 背景技术
传统的MEMS麦克风包括具有空腔的基底、设置于基底上方的背板、以及设置于背板和基底之间的振膜，空腔具有与振膜相似的形状。振膜在冲击气流的作用下，做靠近背板或者背离背板的运动。
 技术问题
然而，当冲击气流很大时，振膜做背离背板的运动由于没有阻挡，振膜的位移很大，直到超过振膜材料所能承受的极限位移，导致振膜破损，造成传统的MEMS麦克风的可靠性不好。
因此，实有必要提供一种新的MEMS麦克风来解决上述技术问题。
 技术解决方案
本实用新型的目的是克服上述技术问题，提供一种可以提高可靠性的MEMS麦克风。
为了实现上述目的，本实用新型提供一种MEMS麦克风，包括具有空腔的基底、设置于所述基底上方的背板、以及设置于所述背板和所述基底之间的振膜，所述MEMS麦克风还包括设置于所述空腔内用以限制所述振膜背离所述背板的最大位移的限位结构，所述最大位移不小于所述振膜背离所述背板的正常工作位移。
优选的，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构包括连接于所述围壁的单个连接壁。
优选的，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构包括连接于所述围壁且交叉设置的至少两个连接壁。
优选的，所述至少两个连接壁交叉于同一处且形成相等的交叉间隔。
优选的，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构连接于所述围壁，所述限位结构包括顶部和与所述顶部相对的底部，所述顶壁和所述顶部平齐设置，所述底壁和所述底部平齐设置。
优选的，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构连接于所述围壁，所述限位结构包括顶部和与所述顶部相对的底部，所述顶壁和所述顶部平齐设置，所述底部相对于所述底壁更加靠近所述振膜。
优选的，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构连接于所述围壁，所述限位结构包括顶部和与所述顶部相对的底部，所述底壁和所述底部平齐设置，所述顶壁相对于所述顶部更加靠近所述振膜。
优选的，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构连接于所述围壁，所述限位结构包括顶部和与所述顶部相对的底部，所述顶壁相对于所述顶部更加靠近所述振膜，所述底部相对于所述底壁更加靠近所述振膜。
优选的，所述基底与所述限位结构一体成型。
 有益效果
本实用新型的MEMS麦克风中，通过在基底的空腔内设置用以限制振膜背离背板的最大位移的限位结构，使得振膜背离背板的位移不会超过振膜材料所能承受的极限位移，从而避免了振膜背离背板的位移超过振膜材料所能承受的极限位移导致的振膜破损，提高了MEMS麦克风的可靠性，此外，限位结构限制的振膜背离背板的最大位移不小于振膜背离背板的正常工作位移，从而设置限位结构并不会影响MEMS麦克风的正常工作。
 附图说明
为了更清楚地说明本实用新型实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本实用新型的一些实施例，对于本实用新型领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中：
图1为本实用新型的第一种MEMS麦克风的剖视结构示意图；
图2为本实用新型的第一种MEMS麦克风的基底和限位结构的组合的剖视结构示意图；
图3为本实用新型的第一种MEMS麦克风的基底和限位结构的组合结构示意图；
图4为本实用新型的第二种MEMS麦克风的基底和限位结构的组合结构示意图；
图5为本实用新型的第三种MEMS麦克风的基底和限位结构的组合结构示意图；
图6为本实用新型的第四种MEMS麦克风的基底和限位结构的组合的剖视结构示意图；
图7为本实用新型的第五种MEMS麦克风的基底和限位结构的组合的剖视结构示意图；
图8为本实用新型的第六种MEMS麦克风的基底和限位结构的组合的剖视结构示意图。
 本发明的最佳实施方式
下面将结合本实用新型实施例中的附图，对本实用新型实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本实用新型的一部分实施例，而不是全部的实施例。基于本实用新型中的实施例，本实用新型领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本实用新型保护的范围。
请参阅图1至图3所示，本实用新型提供了一种MEMS麦克风100，所述MEMS麦克风100包括具有空腔10的基底1、设置于所述基底1上方的背板2、以及设置于所述背板2和所述基底1之间的振膜3。
所述基底1包括顶壁11、与所述顶壁11相对的底壁12、以及连接所述顶壁11和所述底壁12且围成所述空腔10的围壁13。
所述MEMS麦克风100还包括设置于所述空腔10内用以限制所述振膜3背离所述背板2的最大位移的限位结构4，所述最大位移不小于所述振膜3背离所述背板2的正常工作位移。
在本实施方式中，所述限位结构4连接于所述围壁13，当然，在其他实施方式中，所述限位结构4不局限于连接于所述围壁13，只要是所述限位结构4能够形成于所述空腔10内的任意形式都是可行的。
在本实施方式中，所述限位结构4为连接于所述围壁13交叉设置的两个连接壁40，优选的，两个连接壁40交叉形成4个90度的交叉间隔S1。
在本实施方式中，所述限位结构4包括顶部41和与所述顶部41相对的底部42，所述顶壁11和所述顶部41平齐设置，所述底壁12和所述底部42平齐设置。
在其他实施方式中，例如如图4所示，所述限位结构4还可以为连接于所述围壁13的单个连接壁40；例如如图5所示，所述限位结构4还可以为连接于所述围壁13且交叉设置的三个连接壁40，优选的，三个连接壁40交叉于同一处且形成6个60度的交叉间隔S2。在其他实施方式中，所述限位结构4还可以进一步为连接于所述围壁13且交叉设置的三个以上的连接壁40，优选的，三个以上的连接壁40交叉于同一处且形成相等的交叉间隔。
在其他实施方式中，例如如图6所示，所述限位结构4还可以是连接于所述围壁13，所述顶壁11和所述顶部41平齐设置，所述底部42相对于所述底壁12更加靠近所述振膜3。
在其他实施方式中，例如如图7所示，所述限位结构4还可以是连接于所述围壁13，所述底壁12和所述底部42平齐设置，所述顶壁11相对于所述顶部41更加靠近所述振膜3，将所述振膜3与所述限位结构4之间的距离适当增大，可以减小所述限位结构4对所述振膜3形成的压膜阻尼。
在其他实施方式中，例如如图8所示，所述限位结构4还可以是连接于所述围壁13，所述顶壁11相对于所述顶部41更加靠近所述振膜3，所述底部42相对于所述底壁12更加靠近所述振膜3，将所述振膜3与所述限位结构4之间的距离适当增大，可以减小所述限位结构4对所述振膜3形成的压膜阻尼。
作为一种可选方式，所述基底1与所述限位结构4一体成型，在形成所述空腔10的时候一并形成所述限位结构4，也就是说所述限位结构4可以是形成所述基底1的基材的一部分形成的。
本实用新型的MEMS麦克风中，通过在基底的空腔内设置用以限制振膜背离背板的最大位移的限位结构，使得振膜背离背板的位移不会超过振膜材料所能承受的极限位移，从而避免了振膜背离背板的位移超过振膜材料所能承受的极限位移导致的振膜破损，提高了MEMS麦克风的可靠性，此外，限位结构限制的振膜背离背板的最大位移不小于振膜背离背板的正常工作位移，从而设置限位结构并不会影响MEMS麦克风的正常工作。
以上所述的仅是本实用新型的实施方式，在此应当指出，对于本实用新型领域的普通技术人员来说，在不脱离本实用新型创造构思的前提下，还可以做出改进，但这些均属于本实用新型的保护范围。

Claims (9)

  1. 一种MEMS麦克风，包括具有空腔的基底、设置于所述基底上方的背板、以及设置于所述背板和所述基底之间的振膜，其特征在于，所述MEMS麦克风还包括设置于所述空腔内用以限制所述振膜背离所述背板的最大位移的限位结构，所述最大位移不小于所述振膜背离所述背板的正常工作位移。
  2. 根据权利要求1所述的MEMS麦克风，其特征在于，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构包括连接于所述围壁的单个连接壁。
  3. 根据权利要求1所述的MEMS麦克风，其特征在于，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构包括连接于所述围壁且交叉设置的至少两个连接壁。
  4. 根据权利要求3所述的MEMS麦克风，其特征在于，所述至少两个连接壁交叉于同一处且形成相等的交叉间隔。
  5. 根据权利要求1所述的MEMS麦克风，其特征在于，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构连接于所述围壁，所述限位结构包括顶部和与所述顶部相对的底部，所述顶壁和所述顶部平齐设置，所述底壁和所述底部平齐设置。
  6. 根据权利要求1所述的MEMS麦克风，其特征在于，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构连接于所述围壁，所述限位结构包括顶部和与所述顶部相对的底部，所述顶壁和所述顶部平齐设置，所述底部相对于所述底壁更加靠近所述振膜。
  7. 根据权利要求1所述的MEMS麦克风，其特征在于，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构连接于所述围壁，所述限位结构包括顶部和与所述顶部相对的底部，所述底壁和所述底部平齐设置，所述顶壁相对于所述顶部更加靠近所述振膜。
  8. 根据权利要求1所述的MEMS麦克风，其特征在于，所述基底包括顶壁、与所述顶壁相对的底壁、以及连接所述顶壁和所述底壁且围成所述空腔的围壁，所述限位结构连接于所述围壁，所述限位结构包括顶部和与所述顶部相对的底部，所述顶壁相对于所述顶部更加靠近所述振膜，所述底部相对于所述底壁更加靠近所述振膜。
  9. 根据权利要求1所述的MEMS麦克风，其特征在于，所述基底与所述限位结构一体成型。
PCT/CN2024/097641 2024-06-06 2024-06-06 Mems麦克风 Pending WO2025251237A1 (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204031449U (zh) * 2014-07-31 2014-12-17 歌尔声学股份有限公司 硅基mems麦克风
CN206061135U (zh) * 2016-08-22 2017-03-29 上海微联传感科技有限公司 一种mems麦克风
US20180192192A1 (en) * 2017-01-04 2018-07-05 Samsung Electronics Co., Ltd. Displacement limiter for loudspeaker mechanical protection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204031449U (zh) * 2014-07-31 2014-12-17 歌尔声学股份有限公司 硅基mems麦克风
CN206061135U (zh) * 2016-08-22 2017-03-29 上海微联传感科技有限公司 一种mems麦克风
US20180192192A1 (en) * 2017-01-04 2018-07-05 Samsung Electronics Co., Ltd. Displacement limiter for loudspeaker mechanical protection

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