WO2025236337A1 - 显示面板和显示装置 - Google Patents

显示面板和显示装置

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Publication number
WO2025236337A1
WO2025236337A1 PCT/CN2024/097209 CN2024097209W WO2025236337A1 WO 2025236337 A1 WO2025236337 A1 WO 2025236337A1 CN 2024097209 W CN2024097209 W CN 2024097209W WO 2025236337 A1 WO2025236337 A1 WO 2025236337A1
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WO
WIPO (PCT)
Prior art keywords
layer
pixel
sub
light
pixel opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/097209
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English (en)
French (fr)
Inventor
唐芮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Publication of WO2025236337A1 publication Critical patent/WO2025236337A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G09F9/335—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes being organic light emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • This application relates to the field of display technology, and in particular to a display panel and display device.
  • OLED Organic Light-Emitting Diode
  • OLED displays are widely used in various fields due to their advantages such as lightweight, wide viewing angle, low power consumption, fast response speed, low temperature resistance, high luminous efficiency, and the ability to fabricate flexible displays.
  • OLED displays include top-emitting OLEDs and bottom-emitting OLEDs. Top-emitting OLEDs are not affected by the transparency of the substrate, which can effectively increase the aperture ratio of the OLED display, facilitating integration with transistor backplanes and narrowing the spectrum and color purity, making them widely used in electronic products of all sizes. However, top-emitting OLEDs suffer from a relatively low external quantum efficiency (i.e., light output efficiency).
  • MLA microlens array
  • This application provides a display panel and a display device to solve the technical problem that existing methods for improving the light removal efficiency of OLED display devices using microstructured multilayer films have the risk of large thickness of the OLED display device and easy film peeling.
  • This application embodiment provides a display panel, the display panel including:
  • a driving circuit layer is disposed on one side of the substrate
  • a light-emitting functional layer is disposed on the side of the driving circuit layer away from the substrate.
  • the light-emitting functional layer includes a pixel electrode layer, a light-emitting material layer, and a pixel definition layer.
  • the pixel electrode layer is disposed on the side of the driving circuit layer away from the substrate.
  • the pixel definition layer is disposed on the side of the pixel electrode layer away from the driving circuit layer.
  • the light-emitting material layer is disposed on the side of the pixel definition layer away from the pixel electrode layer.
  • the pixel definition layer includes a first sub-layer and a second sub-layer.
  • the first sub-layer is disposed on the side of the pixel electrode layer away from the driving circuit layer and includes a first pixel opening.
  • the second sub-layer is disposed on the side of the first sub-layer away from the pixel electrode layer and extends into the first pixel opening.
  • the second sub-layer includes a second pixel opening.
  • the light-emitting material layer at least covers the second pixel opening.
  • the refractive index of the second sub-layer is greater than that of the first sub-layer.
  • this application embodiment provides a display device, which includes a display panel, the display panel comprising:
  • a driving circuit layer is disposed on one side of the substrate
  • a light-emitting functional layer is disposed on the side of the driving circuit layer away from the substrate.
  • the light-emitting functional layer includes a pixel electrode layer, a light-emitting material layer, and a pixel definition layer.
  • the pixel electrode layer is disposed on the side of the driving circuit layer away from the substrate.
  • the pixel definition layer is disposed on the side of the pixel electrode layer away from the driving circuit layer.
  • the light-emitting material layer is disposed on the side of the pixel electrode layer away from the driving circuit layer.
  • the pixel definition layer includes a first sub-layer and a second sub-layer.
  • the first sub-layer is disposed on the side of the pixel electrode layer away from the driving circuit layer and includes a first pixel opening.
  • the second sub-layer is disposed on the side of the first sub-layer away from the pixel electrode layer and extends into the first pixel opening.
  • the second sub-layer includes a second pixel opening.
  • the light-emitting material layer at least covers the second pixel opening.
  • the refractive index of the second sub-layer is greater than that of the first sub-layer.
  • Figure 1 is a schematic diagram of existing OLED display devices.
  • FIG. 2 is a schematic diagram of the display panel provided in an embodiment of this application.
  • Figure 3 is a schematic diagram of the first pixel opening and the second pixel opening provided in an embodiment of this application.
  • Figure 4 is a schematic diagram of the structure of the display panel corresponding to each step of the manufacturing method of the display panel provided in the embodiment of this application.
  • first and second are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with “first” and “second” may explicitly or implicitly include one or more of the stated features. In the description of this application, "a plurality of” means two or more, unless otherwise explicitly specified.
  • the terms “installation,” “connection,” and “linking” should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
  • the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, “above,” “over,” and “on top” of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. “Below,” “below,” and “under” the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
  • an existing OLED display device includes a driving substrate 11, a planarization film layer 12, a pixel definition film layer 14, a light-emitting film layer 13, an encapsulation film layer 15, and a touch film layer 16 arranged sequentially.
  • a microstructured stacked film is provided on the touch film layer 16.
  • the touch film layer 16 is provided with a first light extraction layer 17 and a second light extraction layer 18. By making the refractive index of the first light extraction layer 17 less than that of the second light extraction layer 18, light can be emitted normally.
  • This application provides a display panel and a display device to address the aforementioned technical problems.
  • this application embodiment provides a display panel 2, which includes: a substrate 21, a driving circuit layer 22, and a light-emitting functional layer 23.
  • the driving circuit layer 22 is disposed on one side of the substrate 21; the light-emitting functional layer 23 is disposed on the side of the driving circuit layer 22 away from the substrate 21.
  • the light-emitting functional layer 23 includes a pixel electrode layer 231, a light-emitting material layer 233, and a pixel definition layer 232.
  • the pixel electrode layer 231 is disposed on the side of the driving circuit layer 22 away from the substrate 21, the pixel definition layer 232 is disposed on the side of the pixel electrode layer 231 away from the driving circuit layer 22, and the light-emitting material layer 233 is disposed on the side of the pixel electrode layer 231 away from the driving circuit layer 22.
  • the pixel definition layer 232 includes a first sub-layer 232a and a second sub-layer 232b.
  • the first sub-layer 232a is disposed on the side of the pixel electrode layer 231 away from the driving circuit layer 22 and includes a first pixel opening 311.
  • the second sub-layer 232b is disposed on the side of the first sub-layer 232a away from the pixel electrode layer 231 and extends into the first pixel opening 311.
  • the second sub-layer 232b includes a second pixel opening 312.
  • the light-emitting material layer 233 at least covers the second pixel opening 312.
  • the refractive index of the second sub-layer 232b is greater than the refractive index of the first sub-layer 232a.
  • This application provides a display panel in which a pixel definition layer includes a first sub-layer and a second sub-layer, with the second sub-layer extending into the opening of a first pixel.
  • the refractive index of the second sub-layer is greater than that of the first sub-layer, so the contact surface between the first and second sub-layers forms a total internal reflection surface.
  • the pixel definition layer forms a microstructured multilayer film, eliminating the need for additional film layers and reducing the thickness of the display panel.
  • the microstructured multilayer film formed by the pixel definition layer is closer to the light-emitting material layer, which improves light extraction efficiency compared to microstructured multilayer films used in peripheral devices.
  • the pixel definition layer can be manufactured using a high-temperature process, offering greater material selectivity, more stable performance, and lower cost.
  • the first pixel opening 311 cannot be seen in Figure 2.
  • the first pixel opening 311 formed by the first sub-layer 232a can be defined by the boundary of the first sub-layer 232a.
  • the luminescent material layer 233 at least covers the second pixel opening 312.
  • the second pixel opening 312 cannot be seen in Figure 2, but the second pixel opening 312 formed by the second sub-layer 232b can be defined by the boundary of the second sub-layer 232b.
  • the light 26 emitted by the light-emitting material layer 233 passes through the second sub-layer 232b and illuminates the contact surface between the second sub-layer 232b and the first sub-layer 232a. Since the contact surface between the second sub-layer 232b and the first sub-layer 232a is a total reflection surface, the light is reflected out of the display panel, thereby improving the light emission efficiency of the display panel.
  • the microstructure stacked film in existing OLED display devices can only extract a portion of the light. Furthermore, the microstructure stacked film in existing OLED display devices cannot capture or extract light at downward angles or wide viewing angles.
  • a pixel definition layer is used to form the microstructure stacked film, which can extract light at downward angles and light at wide viewing angles, thereby improving the light extraction efficiency and the light emission efficiency of the display panel.
  • the existing process for forming the microstructured multilayer film can only use a low-temperature curing process to prevent the process from affecting the luminescent material. This results in greater difficulty in material development, fewer material choices, poor stability, and higher costs.
  • the pixel definition layer is formed before the formation of the luminescent material layer. Therefore, the process for forming the pixel definition layer will not affect the luminescent material layer.
  • a high-temperature process can be used to form the pixel definition layer, resulting in a wider range of material choices, lower costs, and more stable performance.
  • the pixel electrode layer 231 includes a plurality of pixel electrodes 231a arranged in an array.
  • a first pixel opening 311 is disposed corresponding to a corresponding pixel electrode 231a
  • a second pixel opening 312 is disposed corresponding to a corresponding first pixel opening 311.
  • the area of the second pixel opening 312 is smaller than the area of the first pixel opening 311.
  • the projection of the second pixel opening 312 on the substrate 21 lies within the projection of the first pixel opening 311 on the substrate 21, and the distance L3 between the second pixel opening 312 and the first pixel opening 311 ranges from 2 to 4 micrometers.
  • the first sub-layer and the second sub-layer can form a contact surface, which can reflect the light emitted by the light-emitting material layer, improving light efficiency.
  • the distance between the first pixel opening and the second pixel opening is in the range of 2 to 4 micrometers, resulting in a smaller thickness through which light passes, thereby reducing light loss and preventing the second sub-layer from being too thin to form a total reflection surface.
  • the width of the first pixel opening ranges from 5 micrometers to 100 micrometers
  • the width of the second pixel opening ranges from 5 micrometers to 100 micrometers.
  • the distance between the first pixel opening and the second pixel opening is 3 micrometers.
  • the width of the first pixel opening is limited by the width of the opening on the side of the first sub-layer closest to the pixel electrode layer.
  • the width of the second pixel opening is limited by the width of the opening on the side of the second sub-layer closest to the pixel electrode layer.
  • the display panel includes multiple pixel units, each pixel unit including at least a red sub-pixel, a blue sub-pixel, and a green sub-pixel, as shown in Figure 3.
  • the first pixel opening 311 includes a first green pixel opening 411 corresponding to the green sub-pixel, a first red pixel opening 412 corresponding to the red sub-pixel, and a first blue pixel opening 413 corresponding to the blue sub-pixel.
  • the second pixel opening 312 includes a second green pixel opening 421 corresponding to the green sub-pixel, a second red pixel opening 422 corresponding to the red sub-pixel, and a second blue pixel opening 423 corresponding to the blue sub-pixel.
  • the areas of the first pixel opening and the second pixel opening corresponding to different sub-pixels are different. It is understandable that, due to the different luminous efficiencies of different sub-pixels, when forming pixel openings corresponding to different sub-pixels, the areas of the pixel openings corresponding to different sub-pixels can be made different. For example, if the area of the blue sub-pixel is larger than the area of the green sub-pixel, then the area of the first blue pixel opening can be larger than the area of the first green pixel opening, and the area of the second blue pixel opening can be larger than the area of the second green pixel opening. However, the embodiments of this application are not limited to this; the area of the pixel opening can be set accordingly based on different pixel designs.
  • the spacing between the second pixel opening and the first pixel opening corresponding to different sub-pixels can be the same.
  • the spacing between the first blue pixel opening and the second blue pixel opening is equal to the spacing between the first green pixel opening and the second green pixel opening.
  • the spacing between the second pixel opening and the first pixel opening corresponding to different sub-pixels can be different.
  • the spacing between the first blue pixel opening and the second blue pixel opening is greater than or less than the spacing between the first green pixel opening and the second green pixel opening.
  • the shape of the first pixel opening 311 is the same as the shape of the second pixel opening 312, making the reflective surface formed by the first pixel opening and the second pixel opening relatively flat and having a better light reflection effect.
  • the shapes of the first pixel opening 311 and the second pixel opening 312 are both rhomboid, but the embodiments of this application are not limited to this, and the shapes of the first pixel opening and the second pixel opening can be other shapes.
  • the second sublayer 232b is in contact with at least a portion of the first sublayer 232a's second upper surface 512 away from the substrate 21 near the first lower surface 511 of the substrate 21, and with at least a portion of the pixel electrode 231a's third upper surface 513 away from the substrate 21.
  • the second sublayer and the first sublayer directly contact each other to form a reflective surface, resulting in better light extraction.
  • the second sublayer overlapping the pixel electrode ensures that the light-emitting material and the pixel electrode are correspondingly positioned, and the reflective surface formed by the first and second sublayers can reflect the light emitted by the light-emitting material, thereby improving the light extraction effect.
  • the first sub-layer 232a and the pixel electrode layer 231 form a first angle A1
  • the second sub-layer 232b and the pixel electrode layer 231 form a second angle A2, wherein the first angle A1 is greater than or equal to the second angle A2.
  • the contact surface between the second and first sub-layers is flat, and the total internal reflection surface formed by the second and first sub-layers has a better light extraction effect, thus improving the light emission efficiency of the display panel.
  • the embodiments of this application define the acute angle formed between the first sub-layer and the pixel electrode layer as the first included angle.
  • the acute angle formed between the second sub-layer and the pixel electrode layer is the second included angle.
  • the first included angle ranges from 20 degrees to 60 degrees
  • the second included angle ranges from 20 degrees to 60 degrees
  • the first included angle can be relatively small. This allows the second sublayer to overlap the first sublayer during its formation, preventing breakage. Furthermore, to prevent the first included angle from being too small and causing light to diffuse and fail to reach the contact surface between the first and second sublayers, the first included angle can be relatively large, resulting in a range of 20 to 60 degrees. By setting the second sublayer to have the same angle as the first sublayer, breakage during subsequent film formation can be prevented, and an angle that is too small would prevent light reflection. This range of 20 to 60 degrees ensures high light emission efficiency for the display panel.
  • the difference between the refractive indices of the second sublayer and the first sublayer ranges from 0.1 to 0.15.
  • the total internal reflection surface formed by the first and second sublayers has a better light extraction effect, improving the light extraction efficiency of the display panel, and avoiding excessive light scattering due to an excessively large difference in refractive indices between the first and second sublayers, thus improving the light efficiency of the display panel.
  • the refractive index of the first sublayer ranges from 1.4 to 1.55, and the refractive index of the second sublayer ranges from 1.55 to 1.85.
  • the total internal reflection surface formed by the first and second sublayers has a better light reflection effect, thereby improving the light emission efficiency of the display panel.
  • the material of the second sub-layer includes a transparent material
  • the material of the first sub-layer includes one of a transparent material and a non-transparent material.
  • the material of the second sublayer includes transparent organic photoresist
  • the material of the first sublayer includes organic photoresist
  • the material of the first sublayer can be a non-transparent material, which allows light to pass through the second sublayer but not through the first sublayer, preventing light from shining downwards onto the thin-film transistor and causing electrical shift in the thin-film transistor, thus improving the stability of the thin-film transistor.
  • the material of the first sublayer includes one of acrylic resin, epoxy resin, phenolic resin, and polyamide resin
  • the material of the second sublayer includes one of acrylic resin, epoxy resin, phenolic resin, and polyamide resin.
  • the properties of each resin can be changed by adjusting the dopants or groups within each system.
  • the first sublayer formed can be opaque, but the second sublayer formed can be transparent, thereby achieving different functions of different film layers.
  • the light-emitting functional layer 23 further includes a common electrode layer 234.
  • the thickness L1 of the first sub-layer 232a is greater than or equal to the thickness L2 of the second sub-layer 232b, and the thickness of the pixel definition layer 232 is greater than the sum of the thicknesses L4 of the pixel electrode layer 231, the light-emitting material layer 233, and the common electrode layer 234.
  • the thickness of the first sub-layer equal to the thickness of the second sub-layer, and the thickness of the pixel definition layer greater than the sum of the thicknesses of the pixel electrode layer, the light-emitting material layer, and the common electrode layer, the overflow of the light-emitting material layer into the corresponding second pixel opening is avoided, resulting in better uniformity of the display panel.
  • the above embodiments are illustrated using the example that the thickness of the first sublayer is equal to the thickness of the second sublayer, but the embodiments of this application are not limited to this, and the thicknesses of the first sublayer and the second sublayer may be different.
  • the above embodiments are illustrated by taking the example that the thickness of the pixel definition layer is greater than the sum of the thicknesses of the pixel electrode layer, the light-emitting material layer, and the common electrode layer.
  • the embodiments of this application are not limited to this.
  • the thickness of the pixel definition layer can be equal to the sum of the thicknesses of the pixel electrode layer, the light-emitting material layer, and the common electrode layer, so that the thickness of the pixel definition layer is smaller and the height difference between different regions of the common electrode layer is smaller, thus avoiding breakage of the common electrode layer.
  • the thickness of the first sublayer ranges from 0.3 micrometers to 5 micrometers.
  • the thickness of the second sublayer ranges from 0.3 micrometers to 5 micrometers.
  • the driving circuit layer 22 includes a thin-film transistor array layer 221 and a planarization layer 222.
  • the thin-film transistor array layer 221 includes a buffer layer, an active layer, a first gate insulating layer, a first metal layer, a second gate insulating layer, a second metal layer, an interlayer insulating layer, and a source/drain layer, which are sequentially arranged.
  • the display panel also includes an encapsulation layer 24 and a touch layer 25.
  • the encapsulation layer includes a first inorganic layer, an organic layer, and a second inorganic layer.
  • the touch layer includes a first electrode layer, an insulating layer, and a second electrode layer.
  • the first sub-layer and the pixel electrode layer form a first angle
  • the second sub-layer and the pixel electrode layer form a second angle
  • the first angle is equal to the second angle
  • the difference between the refractive index of the second sub-layer and the refractive index of the first sub-layer is in the range of 0.1 to 0.15.
  • this application embodiment provides a method for manufacturing a display panel, the method comprising:
  • a substrate is provided, and a driving circuit layer is formed on the substrate; the structure of the display panel corresponding to this step is shown in Figure 4(a);
  • a pixel electrode layer and a first sub-layer are formed on the driving circuit layer; the structure of the display panel corresponding to this step is shown in Figure 4(a);
  • the first sub-layer is patterned using an exposure and development process, forming a first pixel opening in the region corresponding to the pixel electrode layer to expose the pixel electrode layer; the structure of the display panel corresponding to this step is shown in Figure 4(b);
  • a second sublayer is formed by coating on the first sublayer, and the second sublayer is patterned using an exposure and development process to form a second pixel opening in the region corresponding to the pixel electrode layer, so as to expose the pixel electrode layer; the structure of the display panel corresponding to this step is shown in Figure 4(c).
  • a light-emitting material layer, a common electrode layer, an encapsulation layer, and a touch layer are sequentially formed on the second sub-layer; the structure of the display panel corresponding to this step is shown in Figure 2.
  • this application provides a display device, which includes a display panel as described in any of the above embodiments.

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Abstract

本申请提供一种显示面板和显示装置，该显示面板通过使像素定义层包括第一子层和第二子层，第二子层的折射率大于第一子层的折射率，可以提高显示面板的出光效率，且通过像素定义层形成微结构叠层膜，无需额外增加膜层，减小了显示面板的厚度，且像素定义层形成的微结构叠层膜更靠近发光材料层，可以提高光提取效率。

Description

显示面板和显示装置 技术领域
本申请涉及显示技术领域，尤其是涉及一种显示面板和显示装置。
 背景技术
OLED（Organic Light-Emitting Diode，有机发光二极管）显示器件由于具有轻巧、广视角、低功耗、响应速度快、耐低温、发光效率高，且能制备弯曲的柔性显示屏，被广泛应用在各个领域。OLED显示器件包括顶发射OLED显示器件和底发射OLED显示器件，顶发射OLED显示器件由于不受基板是否透光的影响，可有效提高OLED显示器件的开口率，有利于与晶体管背板集成，并能够窄化光谱和色纯度，被广泛应用于大小电子产品内。但顶发光OLED显示器件存在外量子效率（即光输出效率）较低的问题，经研究发现该问题是由于波导效应、基板效应、表面等离子体效应、吸收效应等影响造成，为了提高光取出效率，现有OLED显示器件中会设置微结构（micro lens array，MLA）叠层膜，具体会在触控层上方设置MLA结构，提高光取出效率。但在触控层上方设置MLA结构会导致OLED显示器件的厚度增大，且在OLED显示器件为动态弯折、瀑布屏以及四曲屏中的一种时，容易出现膜层剥离的风险。
所以，现有采用微结构叠层膜提高OLED显示器件的光去除效率的方法存在OLED显示器件的厚度较大，且容易出现膜层剥离的风险的技术问题。
 发明概述
本申请实施例提供一种显示面板和显示装置，用以解决现有采用微结构叠层膜提高OLED显示器件的光去除效率的方法存在OLED显示器件的厚度较大，且容易出现膜层剥离的风险的技术问题。
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供一种显示面板，该显示面板包括：
衬底；
驱动电路层，设置于所述衬底一侧；
发光功能层，设置于所述驱动电路层远离所述衬底的一侧，所述发光功能层包括像素电极层、发光材料层和像素定义层，所述像素电极层设置于所述驱动电路层远离所述衬底的一侧，所述像素定义层设置于所述像素电极层远离所述驱动电路层的一侧，所述发光材料层设置于所述像素定义层远离所述像素电极层的一侧；
其中，所述像素定义层包括第一子层和第二子层，所述第一子层设置于所述像素电极层远离所述驱动电路层的一侧，所述第一子层包括第一像素开口，所述第二子层设置于所述第一子层远离所述像素电极层的一侧且延伸至所述第一像素开口内，所述第二子层包括第二像素开口，所述发光材料层至少覆盖所述第二像素开口，所述第二子层的折射率大于所述第一子层的折射率。
同时，本申请实施例提供一种显示装置，该显示装置包括显示面板，所述显示面板包括：
衬底；
驱动电路层，设置于所述衬底一侧；
发光功能层，设置于所述驱动电路层远离所述衬底的一侧，所述发光功能层包括像素电极层、发光材料层和像素定义层，所述像素电极层设置于所述驱动电路层远离所述衬底的一侧，所述像素定义层设置于所述像素电极层远离所述驱动电路层的一侧，所述发光材料层设置于所述像素电极层远离所述驱动电路层的一侧；
其中，所述像素定义层包括第一子层和第二子层，所述第一子层设置于所述像素电极层远离所述驱动电路层的一侧，所述第一子层包括第一像素开口，所述第二子层设置于所述第一子层远离所述像素电极层的一侧且延伸至所述第一像素开口内，所述第二子层包括第二像素开口，所述发光材料层至少覆盖所述第二像素开口，所述第二子层的折射率大于所述第一子层的折射率。
 附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为现有OLED显示器件的示意图。
图2为本申请实施例提供的显示面板的示意图。
图3为本申请实施例提供的第一像素开口和第二像素开口的示意图。
图4为本申请实施例提供的显示面板的制备方法的各步骤对应的显示面板的结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
如图1所示，现有OLED显示器件包括依次设置的驱动基板11、平坦化膜层12、像素定义膜层14、发光膜层13、封装膜层15和触控膜层16，为了提高OLED显示器件的出光效率，会通过在触控膜层16上设置微结构叠层膜，具体的，如图1所示，触控膜层16上设有第一光取出层17和第二光取出层18，通过使第一光取出层17的折射率小于第二光取出层18的折射率，使得光线能够正常出射，如图1所示，可以看到发光膜层13发出的内部光线19在照射到微结构叠层膜上被反射出OLED显示器件，从而提高了OLED显示器件的出光效率。可以理解的是，由于OLED显示器件是在触控膜层16上设置微结构叠层膜，会导致OLED显示器件的厚度增加，且在OLED显示器件为弯折显示器件时，如果应用在静态弯折屏上，出现膜层剥离的风险较低，但应用在动态弯折屏、瀑布屏、四曲屏等产品上时，会导致微结构叠层膜的剥离和断裂风险较高。所以，现有采用微结构叠层膜提高OLED显示器件的光去除效率的方法存在OLED显示器件的厚度较大，且容易出现膜层剥离的风险的技术问题。
本申请实施例针对上述技术问题，提供一种显示面板和显示装置，用以解决上述技术问题。
如图2所示，本申请实施例提供一种显示面板，该显示面板2包括：衬底21、驱动电路层22和发光功能层23，驱动电路层22设置于所述衬底21一侧；发光功能层23，设置于所述驱动电路层22远离所述衬底21的一侧，所述发光功能层23包括像素电极层231、发光材料层233和像素定义层232，所述像素电极层231设置于所述驱动电路层22远离所述衬底21的一侧，所述像素定义层232设置于所述像素电极层231远离所述驱动电路层22的一侧，所述发光材料层233设置于所述像素电极层231远离所述驱动电路层22的一侧；
其中，所述像素定义层232包括第一子层232a和第二子层232b，所述第一子层232a设置于所述像素电极层231远离所述驱动电路层22的一侧，所述第一子层232a包括第一像素开口311，所述第二子层232b设置于所述第一子层232a远离所述像素电极层231的一侧且延伸至所述第一像素开口311内，所述第二子层232b包括第二像素开口312，所述发光材料层233至少覆盖所述第二像素开口312，所述第二子层232b的折射率大于所述第一子层232a的折射率。
本申请实施例提供一种显示面板，该显示面板通过使像素定义层包括第一子层和第二子层，且使得第二子层延伸至第一像素开口内，第二子层的折射率大于第一子层的折射率，则第一子层和第二子层的接触面会形成全反射面，使得发光材料层发出的光线在照射到第一子层和第二子层的接触面时，会被反射出显示面板，提高显示面板的出光效率，且通过像素定义层形成微结构叠层膜，无需额外增加膜层，减小了显示面板的厚度，且像素定义层形成的微结构叠层膜更靠近发光材料层，相较于外设的微结构叠层膜可以提高光提取效率，且像素定义层可以采用高温制程，材料选择性较多，性能更加稳定，成本更低。
具体的，如图2所示，由于第二子层232b填充至第一像素开口311内，因此，图2中无法看出第一像素开口311，但可以理解的是，第一子层232a形成的第一像素开口311可以第一子层232a的边界为界线确定。同理，发光材料层233至少覆盖第二像素开口312，图2中无法看出第二像素开口312，第二子层232b形成的第二像素开口312可以第二子层232b的边界为界限确定。
具体的，如图2所示，可以看到发光材料层233发出的光线26在穿过第二子层232b后，照射到第二子层232b与第一子层232a的接触面时，由于第二子层232b和第一子层232a的接触面为全反射面，使得光线被反射出显示面板，提高显示面板的出光效率。
具体的，如图1、图2所示，由于本申请实施例通过像素定义层232形成微结构叠层膜，相较于现有OLED显示器件在触控层外新增多个膜层形成微结构叠层膜，本申请无需新增额外膜层，可以减小OLED显示器件的厚度，且由于像素定义层232设置在显示面板内，像素定义层与其他膜层之间出现剥离的风险降低，使得本申请实施例采用的第一子层和第二子层的结构可以应用在静态弯折屏、瀑布屏、动态弯折屏和四曲屏上，提高了产品形态适配率。
具体的，如图1、图2所示，可以看到，光线从发光材料层发出后会进行发散，因此，现有OLED显示器件中的微结构叠层膜仅能对部分光线进行提取，且对于向下或者大视角的角度，现有OLED显示器件中的微结构叠层膜无法捕捉也无法提取，而本申请实施例中是采用像素定义层形成微结构叠层膜，可以对角度向下的光线和大视角的光线进行提取，提高了的光提取效率，提高了显示面板的出光效率。
具体的，如图1、图2所示，相较于现有OLED显示器件是在形成发光材料后形成微结构叠层膜，因此，为了防止工艺对发光材料的影响，现有形成微结构叠层膜的工艺只能采用低温固化制程，导致材料开发难度较大，选择性较少，且稳定性较差、成本较高，而本申请实施例中的像素定义层是在形成发光材料层之前形成，因此，形成像素定义层的工艺不会对发光材料层产生影响，可以采用高温制程形成像素定义层，使得材料选择性更广、成本更低、性能更加稳定。
在一些实施例中，如图2所示，所述像素电极层231包括：多个阵列排布的像素电极231a，所述第一像素开口311对应相应的所述像素电极231a设置，所述第二像素开口312对应相应的所述第一像素开口311设置，所述第二像素开口312的面积小于所述第一像素开口311的面积。通过使像素电极对应第一像素开口设置，第二像素开口对应第一像素开口设置，且第二像素开口的面积小于第一像素开口的面积，则第一子层和第二子层能够形成接触面，使得第一子层和第二子层形成的接触面能够将发光材料层发出的光线反射出去，提高光线效率。
在一些实施例中，如图2、图3所示，所述第二像素开口312在所述衬底21上的投影位于所述第一像素开口311在所述衬底21上的投影内，所述第二像素开口312与所述第一像素开口311的间距L3的范围为2至4微米。通过使第二像素开口在衬底上的投影位于第一像素开口在衬底上的投影内，使得第一子层和第二子层能够形成接触面，使得第一子层和第二子层形成的接触面能够将发光材料层发出的光线反射出去，提高光线效率，且使得第一像素开口与第二像素开口的间距的范围为2至4微米，使得光线穿过的厚度较小，从而可以降低光线损失，且避免第二子层的厚度过小导致无法形成全反射面。
具体的，第一像素开口的宽度范围为5微米至100微米，第二像素开口的宽度范围为5微米至100微米。
具体的，第一像素开口与第二像素开口的间距为3微米。
具体的，考虑到像素开口的截面形状可能为梯形，第一像素开口的宽度以第一子层靠近像素电极层的一侧的开口的宽度进行限定，同理，第二像素开口的宽度以第二子层靠近像素电极层的一侧的开口的宽度进行限定。
具体的，显示面板包括多个像素单元，每一像素单元至少包括红色子像素、蓝色子像素和绿色子像素，如图3所示，第一像素开口311包括对应绿色子像素的第一绿色像素开口411、对应红色子像素的第一红色像素开口412和对应蓝色子像素的第一蓝色像素开口413，第二像素开口312包括对应绿色子像素的第二绿色像素开口421、对应红色子像素的第二红色像素开口422和对应蓝色子像素的第二蓝色像素开口423。从图3中可以看到，对应不同子像素的第一像素开口和第二像素开口的面积不同。可以理解的是，由于不同子像素的发光效率不同，在形成不同的子像素对应的像素开口时，可以使对应不同子像素的像素开口的面积不同，例如，蓝色子像素的面积大于绿色子像素的面积，则可以使第一蓝色像素开口的面积大于第一绿色像素开口的面积，使第二蓝色像素开口的面积大于第二绿色像素开口的面积。但本申请实施例不限于此，基于不同的像素设计，可以对应设置像素开口的面积。
具体的，可以使对应不同的子像素的第二像素开口和第一像素开口之间的间距相同，例如，第一蓝色像素开口与第二蓝色像素开口之间的间距，等于第一绿色像素开口与第二绿色像素开口之间的间距，也可以使对应不同的子像素的第二像素开口和第一像素开口之间的间距不相同，例如，第一蓝色像素开口与第二蓝色像素开口之间的间距，大于或者小于第一绿色像素开口与第二绿色像素开口之间的间距。
在一些实施例中，如图3所示，所述第一像素开口311的形状与所述第二像素开口312的形状相同，使得第一像素开口和第二像素开口形成的反射面较为平整，对光线的反射效果较好。例如图3中第一像素开口311和第二像素开口312的形状均为菱形，但本申请实施例不限于此，可以使第一像素开口和第二像素开口的形状为其他形状。
在一些实施例中，如图2所示，所述第二子层232b靠近所述衬底21的第一下表面511与至少部分的所述第一子层232a远离所述衬底21的第二上表面512接触，并与至少部分的所述像素电极231a远离所述衬底21的第三上表面513接触。通过使第二子层搭接在第一子层上，使得第二子层与第一子层直接接触形成反射面，光提取效果较好，且第二子层搭接在像素电极上，使得发光材料与像素电极对应设置，且第一子层和第二子层形成的反射面能够对发光材料发出的光线进行反射，提高光提取效果。
在一些实施例中，如图2所示，所述第一子层232a与所述像素电极层231形成有第一夹角A1，所述第二子层232b与所述像素电极层231形成有第二夹角A2，所述第一夹角A1大于或等于所述第二夹角A2。通过使第一夹角大于第二夹角，使得光线能够照射至第一子层与第二子层的反射面，提高光提取效果，使第一子层与像素电极层形成的夹角等于第二子层与像素电极层形成的夹角，使得第二子层和第一子层的接触面平整，第二子层和第一子层形成的全反射面对光提取的效果较好，提高显示面板的出光效率。
具体的，由于第一子层与像素电极层形成的夹角包括锐角和钝角，本申请实施例定义第一子层与像素电极层形成的锐角为第一夹角，同理，第二子层与像素电极层形成的锐角为第二夹角。
在一些实施例中，所述第一夹角的取值范围为20度至60度，所述第二夹角的取值范围为20度至60度。
具体的，为了防止第二子层搭接在第一子层的侧面时出现断裂的问题，可以使第一夹角的角度较小，从而在形成第二子层时，第二子层可以搭接在第一子层上，避免第二子层断裂，且为了防止第一夹角的角度过小导致光线发散无法照射到第一子层和第二子层的接触面，可以使第一夹角相对较大，从而使得第一夹角的取值范围为20度至60度。在设置第二子层时，使第二子层的角度与第一子层的角度相同，可以防止后续膜层形成时出现断裂，也可以避免角度过小导致无法对光线反射，从而使得第一夹角和第二夹角的范围为20度至60度，使得显示面板的出光效率较高。
在一些实施例中，所述第二子层的折射率与所述第二子层的折射率的差值的范围为0.1至0.15。通过使第二子层的折射率与第一子层的折射率的差值的范围为0.1至0.15，使得第一子层与第二子层形成的全反射面对光线的提取效果较好，提高显示面板的出光效率，且避免第一子层和第二子层的折射率差值过大导致光线散射过多，提高显示面板的光效。
在一些实施例中，所述第一子层的折射率的范围为1.4至1.55，所述第二子层的折射率的范围为1.55至1.85。通过使第一子层的折射率范围为1.4至1.55，第二子层的折射率的范围为1.55至1.85，使得第一子层和第二子层形成的全反射面对光线的反射效果较好，提高显示面板的出光效率。
在一些实施例中，所述第二子层的材料包括透明材料，所述第一子层的材料包括透明材料和非透明材料中的一种。通过使第二子层的材料包括透明材料，使得发光材料层发出的光线能够穿过第二子层到达第一子层与第二子层的交界面，从而对光线进行提取，提高显示面板的出光效率。通过第一子层和第二子层的折射率差异形成全反射面，则第一子层的材料可以为透明材料和非透明材料中的一种。
具体的，第二子层的材料包括透明有机光刻胶，第一子层的材料包括有机光刻胶。
具体的，第一子层的材料可以为非透明材料，则可以使得光线穿过第二子层后，不会穿过第一子层，避免光线向下照射至薄膜晶体管导致薄膜晶体管的电性偏移，提高薄膜晶体管的稳定性。
在一些实施例中，所述第一子层的材料包括丙烯酸树脂、环氧树脂、苯酚树脂、聚酰胺树脂中的一种，所述第二子层的材料包括丙烯酸树脂、环氧树脂、苯酚树脂、聚酰胺树脂中的一种。通过使第一子层和第二子层在交界面形成全反射面，且第一子层和第二子层可以采用高温制程形成，则第一子层和第二子层的材料选择较多，且性能更加稳定。
具体的，对于丙烯酸树脂、环氧树脂、苯酚树脂、聚酰胺树脂，由于上述树脂为一种树脂体系，可以通过调整各体系内的掺杂物或者基团来改变各树脂的性能，例如使得形成的第一子层不透明，但形成的第二子层透明，从而实现不同膜层的不同功能。
在一些实施例中，如图2所示，所述发光功能层23还包括公共电极层234，所述第一子层232a的厚度L1大于或等于所述第二子层232b的厚度L2，且所述像素定义层232的厚度大于所述像素电极层231、发光材料层233和公共电极层234的厚度之和L4。通过使第一子层的厚度等于第二子层的厚度，且像素定义层的厚度大于像素电极层、发光材料层和公共电极层的厚度之和，避免发光材料层溢出对应的第二像素开口，使得显示面板的均匀性较好。
具体的，上述实施例以第一子层的厚度等于第二子层的厚度为例进行说明，但本申请实施例不限于此，第一子层和第二子层的厚度可以不同。
具体的，上述实施例以像素定义层的厚度大于像素电极层、发光材料层和公共电极层的厚度之和为例进行说明，但本申请实施例不限于此，例如像素定义层的厚度可以等于像素电极层、发光材料层和公共电极层的厚度之和，使得像素定义层的厚度较小，且公共电极层的不同区域的高度差较小，避免公共电极层断裂。
具体的，第一子层的厚度范围为0.3微米至5微米。
具体的，第二子层的厚度范围为0.3微米至5微米。
具体的，如图2所示，驱动电路层22包括薄膜晶体管阵列层221和平坦化层222。
具体的，薄膜晶体管阵列层221包括依次设置的缓冲层、有源层、第一栅极绝缘层、第一金属层、第二栅极绝缘层、第二金属层、层间绝缘层和源漏极层。
具体的，如图2所示，显示面板还包括封装层24和触控层25。
具体的，封装层包括第一无机层、有机层和第二无机层。
具体的，触控层包括第一电极层、绝缘层和第二电极层。
上述实施例分别从各个结构对显示面板的设计进行了详细说明，可以理解的是，在各实施例不存在冲突时，可以使各实施例结合以达到更好的技术效果，例如，所述第一子层与所述像素电极层形成有第一夹角，所述第二子层与所述像素电极层形成有第二夹角，所述第一夹角等于所述第二夹角，且所述第二子层的折射率与所述第一子层的折射率的差值的范围为0.1至0.15。
同时，本申请实施例提供一种显示面板的制备方法，该显示面板的制备方法包括：
提供衬底，在衬底上形成驱动电路层；该步骤对应的显示面板的结构如图4中的（a）所示；
在驱动电路层上形成像素电极层和第一子层；该步骤对应的显示面板的结构如图4中的（a）所示；
采用曝光显影工艺将第一子层进行图案化，在对应像素电极层的区域形成第一像素开口，以使像素电极层暴露；该步骤对应的显示面板的结构如图4中的（b）所示；
在第一子层上涂布形成第二子层，并使用曝光显影工艺将第二子层进行图案化，在对应像素电极层的区域形成第二像素开口，以使像素电极层暴露；该步骤对应的显示面板的结构如图4中的（c）所示；
在第二子层上依次形成发光材料层、公共电极层、封装层和触控层；该步骤对应的显示面板的结构如图2所示。
同时，本申请实施例提供一种显示装置，该显示装置包括如上述实施例任一所述的显示面板。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种显示面板和显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (20)

  1. 一种显示面板，其包括：
    衬底；
    驱动电路层，设置于所述衬底一侧；
    发光功能层，设置于所述驱动电路层远离所述衬底的一侧，所述发光功能层包括像素电极层、发光材料层和像素定义层，所述像素电极层设置于所述驱动电路层远离所述衬底的一侧，所述像素定义层设置于所述像素电极层远离所述驱动电路层的一侧，所述发光材料层设置于所述像素电极层远离所述驱动电路层的一侧；
    其中，所述像素定义层包括第一子层和第二子层，所述第一子层设置于所述像素电极层远离所述驱动电路层的一侧，所述第一子层包括第一像素开口，所述第二子层设置于所述第一子层远离所述像素电极层的一侧且延伸至所述第一像素开口内，所述第二子层包括第二像素开口，所述发光材料层至少覆盖所述第二像素开口，所述第二子层的折射率大于所述第一子层的折射率。
  2. 如权利要求1所述的显示面板，其中，所述像素电极层包括：多个阵列排布的像素电极，所述第一像素开口对应相应的所述像素电极设置，所述第二像素开口对应相应的所述第一像素开口设置，所述第二像素开口的面积小于所述第一像素开口的面积。
  3. 如权利要求2所述的显示面板，其中，所述第二像素开口在所述衬底上的投影位于所述第一像素开口在所述衬底上的投影内，所述第二像素开口与所述第一像素开口的间距的范围为2至4微米。
  4. 如权利要求2所述的显示面板，其中，所述第一像素开口的形状与所述第二像素开口的形状相同。
  5. 如权利要求2所述的显示面板，其中，所述第二子层靠近所述衬底的第一下表面与至少部分的所述第一子层远离所述衬底的第二上表面接触，并与至少部分的所述像素电极远离所述衬底的第三上表面接触。
  6. 如权利要求1所述的显示面板，其中，所述第一子层与所述像素电极层形成有第一夹角，所述第二子层与所述像素电极层形成有第二夹角，所述第一夹角大于或等于所述第二夹角。
  7. 如权利要求6所述的显示面板，其中，所述第一夹角的取值范围为20度至60度。
  8. 如权利要求1所述的显示面板，其中，所述第一子层的折射率的范围为1.4至1.55，所述第二子层的折射率的范围为1.55至1.85。
  9. 如权利要求8所述的显示面板，其中，所述第二子层的折射率与所述第一子层的折射率的差值的范围为0.1至0.15。
  10. 如权利要求1所述的显示面板，其中，所述第二子层的材料包括透明材料，所述第一子层的材料包括透明材料和非透明材料中的一种。
  11. 如权利要求1所述的显示面板，其中，所述发光功能层还包括公共电极层，所述第一子层的厚度大于或等于所述第二子层的厚度，且所述像素定义层的厚度大于所述像素电极层、发光材料层和公共电极层的厚度之和。
  12. 一种显示装置，其包括显示面板，所述显示面板包括：
    衬底；
    驱动电路层，设置于所述衬底一侧；
    发光功能层，设置于所述驱动电路层远离所述衬底的一侧，所述发光功能层包括像素电极层、发光材料层和像素定义层，所述像素电极层设置于所述驱动电路层远离所述衬底的一侧，所述像素定义层设置于所述像素电极层远离所述驱动电路层的一侧，所述发光材料层设置于所述像素电极层远离所述驱动电路层的一侧；
    其中，所述像素定义层包括第一子层和第二子层，所述第一子层设置于所述像素电极层远离所述驱动电路层的一侧，所述第一子层包括第一像素开口，所述第二子层设置于所述第一子层远离所述像素电极层的一侧且延伸至所述第一像素开口内，所述第二子层包括第二像素开口，所述发光材料层至少覆盖所述第二像素开口，所述第二子层的折射率大于所述第一子层的折射率。
  13. 如权利要求12所述的显示装置，其中，所述像素电极层包括：多个阵列排布的像素电极，所述第一像素开口对应相应的所述像素电极设置，所述第二像素开口对应相应的所述第一像素开口设置，所述第二像素开口的面积小于所述第一像素开口的面积。
  14. 如权利要求13所述的显示装置，其中，所述第二像素开口在所述衬底上的投影位于所述第一像素开口在所述衬底上的投影内，所述第二像素开口与所述第一像素开口的间距的范围为2至4微米。
  15. 如权利要求13所述的显示装置，其中，所述第一像素开口的形状与所述第二像素开口的形状相同。
  16. 如权利要求13所述的显示装置，其中，所述第二子层靠近所述衬底的第一下表面与至少部分的所述第一子层远离所述衬底的第二上表面接触，并与至少部分的所述像素电极远离所述衬底的第三上表面接触。
  17. 如权利要求12所述的显示装置，其中，所述第一子层与所述像素电极层形成有第一夹角，所述第二子层与所述像素电极层形成有第二夹角，所述第一夹角大于或等于所述第二夹角。
  18. 如权利要求17所述的显示装置，其中，所述第一夹角的取值范围为20度至60度。
  19. 如权利要求12所述的显示装置，其中，所述第一子层的折射率的范围为1.4至1.55，所述第二子层的折射率的范围为1.55至1.85。
  20. 如权利要求19所述的显示装置，其中，所述第二子层的折射率与所述第一子层的折射率的差值的范围为0.1至0.15。
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