WO2025236252A1 - 显示面板及其制备方法、显示装置 - Google Patents

显示面板及其制备方法、显示装置

Info

Publication number
WO2025236252A1
WO2025236252A1 PCT/CN2024/093772 CN2024093772W WO2025236252A1 WO 2025236252 A1 WO2025236252 A1 WO 2025236252A1 CN 2024093772 W CN2024093772 W CN 2024093772W WO 2025236252 A1 WO2025236252 A1 WO 2025236252A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
layer
emitting device
substrate
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/093772
Other languages
English (en)
French (fr)
Inventor
曾诚
王丹
禹光日
吴欢
魏振业
王其云
马璐蔺
成兴建
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Beijing BOE Technology Development Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Beijing BOE Technology Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd, Beijing BOE Technology Development Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN202480000944.0A priority Critical patent/CN121533177A/zh
Priority to PCT/CN2024/093772 priority patent/WO2025236252A1/zh
Publication of WO2025236252A1 publication Critical patent/WO2025236252A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • This disclosure relates to the field of display technology, and in particular to a display panel, a method for manufacturing the same, and a display device.
  • OLEDs organic light-emitting diodes
  • a display panel includes a substrate, a first electrode layer, a light-emitting functional layer, and a second electrode layer.
  • the first electrode layer is disposed on one side of the substrate; and the first electrode layer includes a plurality of first electrodes.
  • the light-emitting functional layer is disposed on the side of the first electrode layer away from the substrate; and the light-emitting functional layer includes a plurality of light-emitting portions.
  • the second electrode layer is disposed on the side of the light-emitting functional layer away from the substrate; and the second electrode layer includes a plurality of second electrodes.
  • the orthographic projections of the second electrodes, the light-emitting portions, and the first electrodes on the substrate at least partially overlap, and the overlapping portion forms a light-emitting device.
  • the plurality of light-emitting devices includes first light-emitting devices and second light-emitting devices emitting different colors, and the thicknesses of the second electrodes of the first light-emitting devices and the second light-emitting devices are not equal.
  • the plurality of light-emitting devices further include a third light-emitting device, the third light-emitting device having a different emission color from the first light-emitting device and a different emission color from the second light-emitting device; the thickness of the second electrode of the third light-emitting device is not equal to that of the second light-emitting device.
  • one of the first and third light-emitting devices emits red light, the other emits green light, and the second light-emitting device emits blue light.
  • the thickness of the second electrode of the first and/or the third light-emitting device is greater than the thickness of the second electrode of the second light-emitting device.
  • the thickness of the second electrode of the third light-emitting device is equal to the thickness of the second electrode of the first light-emitting device.
  • the thickness of the second electrode of the first light-emitting device and the third light-emitting device is 13nm to 16nm, and the thickness of the second electrode of the second light-emitting device is 10nm to 12nm.
  • the ratio of the area of the orthographic projection of the second electrode on the substrate to the area of the orthographic projection of the light-emitting device on the substrate is 1 to 1.2.
  • the display panel further includes a light extraction layer disposed on the side of the second electrode layer away from the substrate.
  • the light extraction layer includes a plurality of light extraction portions, including a first light extraction portion and a second light extraction portion.
  • the orthographic projection of the first light-emitting device onto the substrate is located at the first light extraction portion.
  • the first light-emitting part is within the range of its orthogonal projection onto the substrate.
  • the orthogonal projection of the second light-emitting device onto the substrate is located within the range of its orthogonal projection onto the substrate; and the thickness of the first light-emitting part is not equal to the thickness of the second light-emitting part.
  • the plurality of light-emitting devices further include a third light-emitting device
  • the plurality of light-extracting portions further include a third light-extracting portion.
  • the orthographic projection of the third light-emitting device on the substrate is located within the range of the orthographic projection of the third light-extracting portion on the substrate.
  • the thickness of the third light-extracting portion is not equal to the thickness of the first light-extracting portion, and is not equal to the thickness of the second light-extracting portion.
  • the first light-emitting device emits red light
  • the second light-emitting device emits blue light
  • the third light-emitting device emits green light.
  • the thickness of the first light-extracting portion and/or the third light-extracting portion is greater than the thickness of the second light-extracting portion; and/or, the thickness of the third light-extracting portion is less than the thickness of the first light-extracting portion.
  • the thickness of the first light extraction portion is greater than or equal to 70 nm and less than 80 nm; the thickness of the second light extraction portion is greater than or equal to 45 nm and less than 60 nm; and the thickness of the third light extraction portion is greater than or equal to 60 nm and less than 70 nm.
  • the orthographic projection of the first electrode on the substrate is located within the range of the orthographic projection of the light extraction portion on the substrate. Furthermore, the distance between the boundary of the orthographic projection of the light extraction portion on the substrate and the boundary of the orthographic projection of the first electrode on the substrate is 2 ⁇ m to 8 ⁇ m.
  • the display panel further includes an encapsulation layer disposed on the side of the light-emitting device away from the substrate.
  • the encapsulation layer includes a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer stacked sequentially, with the second inorganic encapsulation layer located on the side of the first inorganic encapsulation layer away from the substrate.
  • the thickness ratio of the first inorganic encapsulation layer to the thickness of the first light extraction portion is 2 to 2.4
  • the thickness ratio of the first inorganic encapsulation layer to the thickness of the second light extraction portion is 1 to 2.4.
  • the plurality of light-emitting devices further include a third light-emitting device
  • the plurality of light extraction portions further include a third light extraction portion.
  • the orthographic projection of the third light-emitting device on the substrate is located within the range of the orthographic projection of the third light extraction portion on the substrate.
  • the ratio of the thickness of the first inorganic encapsulation layer to the thickness of the third light extraction portion is 2 to 2.4.
  • the display panel further includes a transparent conductive layer disposed between the light extraction layer and the second electrode layer, or on the side of the light extraction layer away from the second electrode layer. Furthermore, the transparent conductive layer is connected to the second electrode layer.
  • the transparent conductive layer is disposed on the side of the light extraction layer away from the second electrode layer.
  • the plurality of light extraction portions are spaced apart, and the transparent conductive layer is in electrical contact with the second electrode between the plurality of light extraction portions.
  • the transparent conductive layer is disposed on the side of the light extraction layer away from the second electrode layer. Furthermore, the transparent conductive layer is in direct contact with the light extraction layer.
  • the display panel further includes an encapsulation layer disposed on the side of the second electrode layer away from the substrate.
  • the encapsulation layer includes at least one inorganic encapsulation layer, and the inorganic encapsulation layer closest to the substrate in the at least one inorganic encapsulation layer includes a stacked first sub-encapsulation layer and a second sub-encapsulation layer, the second sub-encapsulation layer being disposed on the side of the first sub-encapsulation layer away from the substrate, and the refractive index of the first sub-encapsulation layer being less than the refractive index of the second sub-encapsulation layer.
  • the thickness of the first sub-encapsulation layer is 40nm to 80nm, and the thickness of the second sub-encapsulation layer is 800nm to 1000nm.
  • the material of the first sub-encapsulation layer includes silicon oxide, and the material of the second sub-encapsulation layer includes silicon oxynitride.
  • the display panel further includes a pixel defining layer and a light blocking structure.
  • the pixel defining layer is disposed on the side of the first electrode layer away from the substrate.
  • the light blocking structure is disposed on the side of the pixel defining layer away from the substrate and surrounds the periphery of the light-emitting device.
  • the display device includes a display panel and a circuit board as described in any of the above embodiments, the circuit board being connected to the display panel.
  • a method for fabricating a display panel includes: sequentially forming a first electrode layer and a light-emitting functional layer on one side of a substrate.
  • the first electrode layer includes a plurality of first electrodes
  • the light-emitting functional layer includes a plurality of light-emitting portions.
  • a second electrode layer is formed on the side of the light-emitting functional layer away from the substrate using a photolithography process.
  • the second electrode layer includes a plurality of second electrodes; the orthographic projections of the second electrodes, the light-emitting portion, and the first electrode onto the substrate at least partially overlap, and the overlapping portion forms a light-emitting device.
  • the plurality of light-emitting devices includes a first light-emitting device and a second light-emitting device emitting different colors, and the thicknesses of the second electrodes of the first light-emitting device and the second light-emitting device are not equal.
  • the fabrication method further includes: forming a light extraction layer on the side of the second electrode layer away from the substrate using a photolithography process; the light extraction layer includes a plurality of light extraction portions, the plurality of light extraction portions including a first light extraction portion and a second light extraction portion, wherein the orthographic projection of the first light-emitting device on the substrate is located within the range of the orthographic projection of the first light extraction portion on the substrate; the orthographic projection of the second light-emitting device on the substrate is located within the range of the orthographic projection of the second light extraction portion on the substrate; and the thickness of the first light extraction portion is not equal to the thickness of the second light extraction portion.
  • the fabrication method further includes: forming a transparent conductive layer on the side of the light extraction layer away from the substrate; the transparent conductive layer being connected to the second electrode layer; forming a first sub-encapsulation layer by bombarding a target with hydrogen gas; and forming a second sub-encapsulation layer by bombarding a target with nitrogen-containing gas; wherein the refractive index of the first sub-encapsulation layer is less than the refractive index of the second sub-encapsulation layer.
  • Figure 1 is a structural diagram of a display device according to some embodiments.
  • Figure 2 is a structural diagram of another display device according to some embodiments.
  • Figure 3 is a cross-sectional view of the display device shown in Figure 1 along section line A-A;
  • Figure 4 is a cross-sectional view of a display panel according to some embodiments.
  • Figure 5 is a cross-sectional view of a light-emitting device according to some embodiments.
  • Figure 6 is a cross-sectional view of another light-emitting device according to some embodiments.
  • Figure 7 is a cross-sectional view of another display panel according to some embodiments.
  • Figure 8 is a simulation result diagram showing the relationship between the luminous efficiency of the first light-emitting device and the reflectivity of the second electrode according to some embodiments;
  • Figure 9 shows the simulation results of the relationship between the luminous efficiency of the second light-emitting device and the reflectivity of the second electrode according to some embodiments.
  • Figure 10 is a simulation result diagram showing the relationship between the luminous efficiency of the third light-emitting device and the reflectivity of the second electrode according to some embodiments.
  • Figure 11 shows the simulation results of the relationship between the luminous efficiency of multiple light-emitting devices with different emission colors according to some embodiments and the thickness of the light extraction layer;
  • Figure 12 is a cross-sectional view of another display panel according to some embodiments.
  • Figure 13 is a cross-sectional view of yet another display panel according to some embodiments.
  • Figure 14 is a cross-sectional view of yet another display panel according to some embodiments.
  • Figure 15 is a simulation result diagram showing the relationship between the luminous efficiency of the first light-emitting device according to some embodiments and the thickness of the second sub-encapsulation layer under different thicknesses of the first sub-encapsulation layer.
  • Figure 16 is a simulation result diagram showing the relationship between the luminous efficiency of the second light-emitting device according to some embodiments and the thickness of the second sub-encapsulation layer under different thicknesses of the first sub-encapsulation layer.
  • Figure 17 shows the simulation results of the luminous efficiency of the third light-emitting device according to some embodiments, and the relationship between the thickness of the second sub-encapsulation layer and the thickness of the first sub-encapsulation layer at different thicknesses of the first sub-encapsulation layer.
  • Figure 18 is a cross-sectional view of yet another display panel according to some embodiments.
  • Figure 19 shows the simulation results of the luminous efficiency of the first light-emitting device according to some embodiments, under different refractive indices of the first inorganic encapsulation layer, and the relationship between the thickness ratio of the first inorganic encapsulation layer and the light extraction layer.
  • Figure 20 shows the simulation results of the luminous efficiency of the second light-emitting device according to some embodiments, under different refractive indices of the first inorganic encapsulation layer, and the relationship between the thickness ratio of the first inorganic encapsulation layer and the light extraction layer.
  • Figure 21 shows the simulation results of the luminous efficiency of the third light-emitting device according to some embodiments, under different refractive indices of the first inorganic encapsulation layer, and the relationship between the thickness ratio of the first inorganic encapsulation layer and the light extraction layer.
  • Figure 22 shows the simulation results of the brightness decay of the illumination intensity of the first light-emitting device according to some embodiments at different viewing angles
  • Figure 23 shows the simulation results of the brightness attenuation of the illumination intensity of the second light-emitting device according to some embodiments at different viewing angles
  • Figure 24 shows the simulation results of the brightness attenuation of the illumination intensity of the third light-emitting device according to some embodiments at different viewing angles
  • Figure 25 shows the simulation results of the brightness attenuation of the illumination intensity of white light mixed from multiple light-emitting devices according to some embodiments at different viewing angles.
  • Figure 26 shows the simulation results of color shift of the first light-emitting device under different viewing angles according to some embodiments
  • Figure 27 shows the simulation results of color shift of the second light-emitting device under different viewing angles according to some embodiments
  • Figure 28 shows the simulation results of color shift of the third light-emitting device under different viewing angles according to some embodiments
  • Figure 29 shows the simulation results of color shift of white light mixed from multiple light-emitting devices according to some embodiments at different viewing angles
  • Figures 30 and 31 are flowcharts of a method for manufacturing a display panel according to some embodiments.
  • Figures 32 to 34 are schematic diagrams of the fabrication steps of a display panel fabrication method according to some embodiments.
  • Figure 35 is a flowchart of a method for manufacturing a display panel according to some embodiments.
  • first and second are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features.
  • a feature defined as “first” or “second” may explicitly or implicitly include one or more of that feature.
  • a plurality of means two or more.
  • connection and its derivative expressions may be used.
  • connection should be interpreted broadly; for example, “connection” can be a mechanical connection or an electrical connection; it can be a fixed connection or a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components.
  • connection can be a mechanical connection or an electrical connection; it can be a fixed connection or a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components.
  • At least one of A, B and C has the same meaning as “at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.
  • a and/or B includes the following three combinations: A only, B only, and a combination of A and B.
  • parallel As used herein, “parallel,” “perpendicular,” and “equal” include the described situation and situations that are similar to the described situation, within an acceptable range of deviation, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system).
  • parallel includes absolute parallelism and approximate parallelism, where an acceptable range of deviation for approximate parallelism may be, for example, within 5°
  • perpendicular includes absolute perpendicularity and approximate perpendicularity, where an acceptable range of deviation for approximate perpendicularity may also be, for example, within 5°
  • equal includes absolute equality and approximate equality, where an acceptable range of deviation for approximate equality may be, for example, a difference between the two equals being less than or equal to 5% of either one.
  • a layer or element when referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.
  • overlap or “coincide” mean that the first object may be above or below the second object or to the side of the second object, and vice versa. Additionally, the term “overlap” may include layering, stacking, facing or oriented, extending over, covering or partially covering, or any other suitable term that will be understood and appreciated by one of ordinary skill in the art.
  • first element can be directly or indirectly relative to the second element.
  • third element is between the first and second elements, although they are still relative to each other, the first and second elements can be understood as being indirectly relative to each other.
  • a component or area, layer, part
  • covering or “wrapping” another component
  • it may directly cover or wrap the other component, or there may be an intervening third component.
  • a display device 1000 which can be any device that displays images, whether moving (e.g., video) or fixed (e.g., still images) and whether it is text or images.
  • the display device 1000 can be any product or component with display function, such as a television, laptop computer, tablet computer, personal digital assistant (PDA), navigator, in-vehicle display, flight display, portable display product, wearable device, virtual reality (VR) device, augmented reality (AR) device, projector, calculator, global positioning system (GPS) receiver/navigator, camera, electronic billboard or sign, etc.
  • PDA personal digital assistant
  • navigator navigator
  • in-vehicle display flight display
  • portable display product portable display product
  • wearable device VR
  • VR virtual reality
  • AR augmented reality
  • projector calculator
  • GPS global positioning system
  • the display device 1000 can be a portable display product; for example, the display device 1000 can be a mobile phone as shown in Figure 1.
  • the display device 1000 can be a wearable device; for example, the display device 1000 can be a watch as shown in Figure 2.
  • the display device 1000 can be a flat display device, a curved display device, or a foldable display device, etc., and the shape of the display surface of the display device 1000 can be any of a circle, an ellipse, a polygon, or an irregular shape.
  • the embodiments disclosed herein do not impose specific limitations.
  • the display device 1000 includes a display panel 100.
  • the display panel 100 may include, for example, a display side and a non-display side disposed opposite to each other.
  • the display side refers to the side of the display panel 100 that displays the screen, and the non-display side refers to the other side opposite to the display side.
  • the display panel 100 described above includes various types, which can be selected and set according to actual needs.
  • the display panel 100 can be: an organic light-emitting diode (OLED) display panel, a quantum dot light-emitting diode (QLED) display panel, a micro/mini light-emitting diode (MLED) display panel, etc., and this disclosure embodiment does not specifically limit it.
  • OLED organic light-emitting diode
  • QLED quantum dot light-emitting diode
  • MLED micro/mini light-emitting diode
  • the following uses the above-mentioned display panel 100 as an OLED display panel as an example to illustrate some embodiments of the present disclosure.
  • the implementation of the present disclosure is not limited to this, and any other display panel can also be considered, as long as the same technical concept is applied.
  • the display device 1000 may further include a housing 200, a cover plate 300, a circuit board 400, and other electronic components.
  • the display panel 100 and the circuit board 400 may be disposed within the housing 200.
  • the housing 200 can be a box-shaped structure with an opening, and the cover plate 300 is disposed on one side of the display panel 100 displaying the image and located at the opening of the housing 200.
  • the display panel 100 and the circuit board 400 can be disposed inside the housing 200, and the circuit board 400 can be bound to the end of the display panel 100 and bent to the back side of the display panel 100 to reduce the bezel of the display panel 100 and increase the screen ratio.
  • the display panel 100 includes a substrate 10 and a driving circuit layer 110, wherein the driving circuit layer 110 is disposed on the substrate 10.
  • substrate 10 can be a rigid substrate or a flexible substrate.
  • the rigid substrate may be made of glass and/or polymethyl methacrylate (PMMA).
  • the flexible substrate may be made of at least one of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide (PI).
  • the driving circuit layer 110 includes a pixel circuit 111, and the pixel circuit 111 includes a transistor T.
  • the driving circuit layer 110 includes at least one semiconductor layer, multiple conductive layers, and multiple insulating layers.
  • the driving circuit layer 110 includes a first semiconductor layer ACT1, a gate insulating layer GI, a first gate conductive layer GT1, a first interlayer insulating layer ILD1, a second gate conductive layer GT2, a second interlayer insulating layer ILD2, and a first source/drain conductive layer SD, which are sequentially disposed.
  • the driving circuit layer 110 may also include two semiconductor layers, three gate conductive layers, and two or more source/drain conductive layers, but this embodiment does not specifically limit this.
  • the display panel 100 further includes a first electrode layer 20, a light-emitting functional layer 30, and a third electrode layer 20. Two electrode layers 40.
  • the first electrode layer 20 is disposed on one side of the substrate 10 and located on the side of the driving circuit layer 110 away from the substrate 10.
  • a planarization layer PLN may be disposed between the first electrode layer 20 and the driving circuit layer 110.
  • the first electrode layer 20 includes a plurality of first electrodes 21, which can be connected to the pixel circuit 111.
  • the material of the first electrode layer 20 includes at least one of silver, magnesium, copper, aluminum, platinum, palladium, gold, nickel, neodymium, iridium, chromium, lithium, calcium, lithium fluoride, molybdenum, titanium, indium, tin, zinc, and ytterbium and their oxides.
  • the first electrode layer 20 can be a stacked structure, for example, the first electrode layer 20 includes a sequentially stacked indium tin oxide layer, a silver layer, and an indium tin oxide layer.
  • the thickness of the first electrode layer 20 can be 100nm to 150nm.
  • the thickness of the first electrode layer 20 can be any of 100nm, 110nm, 115nm, 120nm, 125nm, 130nm, 135nm, 140nm, 145nm and 150nm.
  • the light-emitting functional layer 30 is disposed on the side of the first electrode layer 20 away from the substrate 10, and the light-emitting functional layer 30 includes a plurality of light-emitting portions 31.
  • the light-emitting functional layer 30 includes only the light-emitting layer 310.
  • the light-emitting functional layer 30 in addition to the light-emitting layer 310, also includes at least one of the following: a charge generation layer 320, an electron transport layer 330 (ETL), an electron injection layer 340 (EIL), a hole transport layer 350 (HTL), and a hole injection layer 360 (HIL).
  • the light-emitting functional layer 30 includes multiple light-emitting layers 310, a charge-generating layer 320, an electron transport layer 330, an electron injection layer 340, a hole transport layer 350, and a hole injection layer 360 to improve luminous efficiency and extend service life.
  • the charge-generating layer 320 is disposed between two adjacent light-emitting layers 310
  • the electron transport layer 330 and the electron injection layer 340 are disposed between the light-emitting layer 310 and the second electrode layer 40
  • the hole transport layer 350 and the hole injection layer 360 are disposed between the light-emitting layer 310 and the first electrode layer 20.
  • the charge generation layer 320 is disposed between two adjacent light-emitting layers 310, and an electron transport layer 330 and an electron injection layer 340 may also be disposed between the charge generation layer 320 and the light-emitting layer 310 adjacent to the first electrode layer 20, and a hole transport layer 350 and a hole injection layer 360 may also be disposed between the charge generation layer 320 and the other light-emitting layer 310 adjacent to the second electrode layer 40.
  • the luminescent layer 310 comprises a host luminescent material and a guest luminescent material doped into the host luminescent material.
  • the material of the luminescent layer 310 may include any one of the following: a luminescent material with thermally activated delayed fluorescence at room temperature, a luminescent material with fluorescence at room temperature, or a luminescent material with phosphorescence at room temperature.
  • the charge generation layer 320 is constructed in a p-n structure.
  • the p-type material primarily generates holes and may include materials such as F4-TCNQ and/or HAT-CN.
  • the n-type dopant is a low work function metal doped with the material of the electron transport layer 330, such as Alq3-doped Mg or Bphen-doped Li.
  • the thickness range of the light-emitting layer 310 emitting different colors is not consistent.
  • the thickness of the light-emitting layer 310 emitting red light is 280 nm to 350 nm.
  • the thickness of the light-emitting layer 310 emitting red light is 280 nm to 350 nm.
  • the thickness of the light-emitting layer 310 emitting red light is 280 nm to 350 nm.
  • the thickness of the light-emitting layer 310 emitting red light is any one of 280nm, 290nm, 300nm, 310nm, 320nm, 330nm, 340nm, and 350nm.
  • the thickness of the light-emitting layer 310 emitting red light is any one of 200nm, 210nm, 215nm, 220nm, 225nm, 230nm, 240nm, and 250nm.
  • the thickness of the light-emitting layer 310 emitting blue light is 150nm to 200nm.
  • the thickness of the light-emitting layer 310 emitting red light is any one of 150nm, 160nm, 165nm, 170nm, 175nm, 180nm, 190nm, and 200nm.
  • the materials of electron transport layer 330 and hole transport layer 350 include at least one of aromatic amine hole transport materials, dimethylfluorene hole transport materials, and carbazole hole transport materials.
  • the materials of electron injection layer 340 and hole injection layer 360 include p-type dopants and hole transport materials with strong electron-withdrawing systems.
  • the second electrode layer 40 is disposed on the side of the light-emitting functional layer 30 away from the substrate 10.
  • the overlapping portions of the orthographic projections of the second electrode layer 40, the plurality of light-emitting portions 31, and the plurality of first electrodes 21 onto the substrate 10 can respectively constitute a plurality of spaced-apart light-emitting devices 210.
  • the first electrodes 21 and the second electrode layer 40 respectively inject holes and electrons into the light-emitting portions 31.
  • the excitons generated by the combination of holes and electrons transition from the excited state to the ground state, light emission is achieved.
  • the material of the second electrode layer 40 includes at least one of silver, magnesium, copper, aluminum, platinum, palladium, gold, nickel, neodymium, iridium, chromium, lithium, calcium, lithium fluoride, molybdenum, titanium, indium, tin, zinc and ytterbium and their oxides.
  • luminous efficiency refers to the ratio of brightness to driving current.
  • the inventors discovered that when light-emitting devices with different luminous colors have high luminous efficiency, the reflectivity of the second electrode layer is not the same.
  • the second electrode layer is a continuous, solid-layer structure with equal thickness. This results in only some light-emitting devices having high luminous efficiency while others have low luminous efficiency, leading to a decrease in the luminous efficiency of the display panel.
  • the display panel 100 includes a second electrode layer 40 including a plurality of second electrodes 41, and the orthogonal projections of the second electrodes 41, the light-emitting part 31 and the first electrode 21 on the substrate 10 at least partially overlap, and the overlapping part forms a light-emitting device 210.
  • the multiple light-emitting devices 210 include a first light-emitting device 211 and a second light-emitting device 212 with different emitting colors.
  • the thicknesses of the second electrodes 40 of the first light-emitting device 211 and the second light-emitting device 212 are not equal.
  • the reflectivity of the second electrodes 41 of the first light-emitting device 211 and the second light-emitting device 212 can be adjusted by changing the thickness of the second electrodes 41, so that the luminous efficiency of both the first light-emitting device 211 and the second light-emitting device 212 can reach a high level (e.g., greater than or equal to 100%), thereby improving the luminous efficiency of the display panel 100.
  • the first light-emitting device 211 emits red or green light
  • the second light-emitting device 212 emits blue light.
  • the thickness of the second electrode 41 of the first light-emitting device 211 can, for example, be greater than that of the first electrode 41.
  • the thickness of the second electrode 41 of the second light-emitting device 212 is such that the reflectivity of the second electrode 41 of the first light-emitting device 211 is greater than the reflectivity of the second electrode 41 of the second light-emitting device 212.
  • Figure 8 shows the test simulation results of the relationship between the luminous efficiency of the first light-emitting device and the reflectivity of the second electrode according to some embodiments
  • Figure 9 shows the test simulation results of the relationship between the luminous efficiency of the second light-emitting device and the reflectivity of the second electrode according to some embodiments.
  • the thickness of the second electrode 41 of the first light-emitting device 211 is 13 nm to 16 nm.
  • the thickness of the second electrode 41 of the first light-emitting device 211 can be any one of 13 nm, 14 nm, 15 nm, and 16 nm.
  • the thickness of the second electrode 41 of the second light-emitting device 212 is 10 nm to 12 nm.
  • the thickness of the second electrode 41 of the second light-emitting device 212 can be any one of 10 nm, 11 nm, and 12 nm.
  • the reflectivity of the second electrode 41 of the first light-emitting device 211 and the third light-emitting device 213 is 55% to 60%
  • the reflectivity of the second electrode 41 of the second light-emitting device 212 is 45% to 50%.
  • the first light-emitting device 211 and the second light-emitting device 212 have high luminous efficiency, which can further improve the luminous efficiency of the display panel 100.
  • the plurality of light-emitting devices 210 further includes a third light-emitting device 213, which emits a different color than the first light-emitting device 211 and a different color than the second light-emitting device 212, so as to achieve full-color display.
  • the thicknesses of the second electrodes 40 of the third light-emitting device 213 and the second light-emitting device 212 are not equal.
  • the reflectivity of the second electrodes 41 of the third light-emitting device 213 and the second light-emitting device 212 can be adjusted by changing the thicknesses of the second electrodes 41 of the second light-emitting device 213 and the second light-emitting device 212, so that the luminous efficiency of both the third light-emitting device 213 and the second light-emitting device 212 can reach a high level (e.g., greater than or equal to 100%), thereby further improving the luminous efficiency of the display panel 100.
  • a high level e.g., greater than or equal to 100%
  • one of the first light-emitting devices 211 and the third light-emitting device 213 emits red light
  • the other emits green light
  • the second light-emitting device 212 emits blue light
  • the first light-emitting device 211 emits red light
  • the third light-emitting device 213 emits green light
  • the second light-emitting device 212 emits blue light.
  • the following uses the example of the first light-emitting device 211 emitting red light, the third light-emitting device 213 emitting green light, and the second light-emitting device 212 emitting blue light to illustrate some embodiments of this disclosure.
  • the implementation of this disclosure is not limited to this, and any other light-emitting color can be considered, as long as the same technical concept is applied.
  • the thickness of the second electrode 41 of the third light-emitting device 213 can, for example, be greater than the thickness of the second electrode 41 of the second light-emitting device 212, thereby increasing the reflectivity of the second electrode 41 of the third light-emitting device 213.
  • the reflectivity is greater than that of the second electrode 41 of the second light-emitting device 212.
  • Figure 10 shows the test simulation results of the relationship between the luminous efficiency of the third light-emitting device and the reflectivity of the second electrode according to some embodiments.
  • the reflectivity of the second electrode 41 of the third light-emitting device 213 is greater than that of the second electrode 41 of the second light-emitting device 212, the luminous efficiency of the third light-emitting device 213 can be improved.
  • the thickness of the second electrode 41 of the third light-emitting device 213 is 13 nm to 16 nm.
  • the thickness of the second electrode 41 of the third light-emitting device 213 is any one of 13 nm, 14 nm, 15 nm, and 16 nm.
  • the thickness of the second electrode 41 of the second light-emitting device 212 is 10 nm to 12 nm.
  • the thickness of the second electrode 41 of the second light-emitting device 212 is any one of 10 nm, 11 nm, and 12 nm.
  • the reflectivity of the second electrode 41 of the third light-emitting device 213 is 55% to 60%, and the reflectivity of the second electrode 41 of the second light-emitting device 212 is 45% to 50%.
  • the high luminous efficiency of the third light-emitting device 213 and the second light-emitting device 212 can further improve the luminous efficiency of the display panel 100.
  • the thickness of the second electrode 41 of the third light-emitting device 213 can, for example, be equal to the thickness of the second electrode 41 of the first light-emitting device 211.
  • the first light-emitting device 211 and the third light-emitting device 213 can be formed through the same process step, thus reducing one photolithography process, simplifying the process flow, reducing manufacturing costs, and improving production efficiency.
  • a plurality of second electrodes 41 are spaced apart, and the ratio of the area of the orthographic projection of the second electrodes 41 on the substrate 10 to the area of the orthographic projection of the light-emitting device 210 on the substrate 10 is 1 to 1.2.
  • the ratio of the area of the orthographic projection of the second electrodes 41 on the substrate 10 to the area of the orthographic projection of the light-emitting device 210 on the substrate 10 is any one of 1, 1.02, 1.05, 1.08, 1.1, 1.13, 1.15, 1.17, 1.18, and 1.2.
  • the second electrodes 41 can be spaced apart, making the second electrodes 41 of different light-emitting devices 210 clearly distinguishable, facilitating photolithography and maintenance.
  • multiple second electrodes 41 can also be adjacent, or a portion of one second electrode 41 can overlap the upper side of another second electrode 41; this embodiment does not specifically limit this.
  • the shape of the orthographic projection of the second electrode 41 onto the substrate 10 may be the same as or different from the shape of the orthographic projection of the light-emitting device 210 onto the substrate 10.
  • the shape of the orthographic projection of the second electrode 41 onto the substrate 10 may be the same as the shape of the orthographic projection of the light-emitting device 210 onto the substrate 10, and may be any one of a circle, an ellipse, a rectangle, or a polygon.
  • the display panel 100 further includes a light extraction layer 50, which is disposed on the side of the second electrode layer 40 away from the substrate 10, so as to improve the luminous efficiency of the light-emitting device 210 and increase its service life.
  • the material of the light extraction layer 50 includes hole-type materials and/or electron-type materials.
  • the material of the light extraction layer 50 includes aromatic amines and/or oxazoles.
  • the thickness of the light extraction layer 50 can be 50 nm to 70 nm.
  • the thickness of the light extraction layer 50 can be 50 nm, 52 nm, 55 nm, 58 nm, 60 nm, 63 nm, 65 nm, 68 nm, and 70 nm. Any one of them.
  • the light extraction layer 50 includes a plurality of light extraction portions 51.
  • the orthographic projection of the first electrode 21 onto the substrate 10 is located within the range of the orthographic projection of the light extraction portion 51 onto the substrate 10. Furthermore, the distance L between the boundary of the orthographic projection of the light extraction portion 51 onto the substrate 10 and the boundary of the orthographic projection of the first electrode 21 onto the substrate 10 is 2 ⁇ m to 8 ⁇ m.
  • the distance L between the boundary of the orthographic projection of the light extraction section 51 onto the substrate 10 and the boundary of the orthographic projection of the first electrode 21 onto the substrate 10 is 2 ⁇ m, 3 ⁇ m, 4 ⁇ m, 5 ⁇ m, 6 ⁇ m, 7 ⁇ m, and 8 ⁇ m.
  • most or all of the light emitted by the light-emitting device 210 passes through the corresponding light extraction section 51, which can improve the luminous efficiency of the light-emitting device 210, thereby improving the luminous efficiency of the display panel 100.
  • the plurality of light extraction portions 51 include a first light extraction portion 511 and a second light extraction portion 512.
  • the orthographic projection of the first light-emitting device 211 on the substrate 10 is located within the range of the orthographic projection of the first light extraction portion 511 on the substrate.
  • the orthographic projection of the second light-emitting device 212 on the substrate 10 is located within the range of the orthographic projection of the second light extraction portion 512 on the substrate 10.
  • the thickness of the first light extraction portion 511 is not equal to the thickness of the second light extraction portion 512.
  • the thickness of the light extraction section 51 is not the same. Based on this, the thickness of the first light extraction section 511 is not equal to the thickness of the second light extraction section 512. In this way, the thickness of the first light extraction section 511 and the second light extraction section 512 can be adapted to corresponding thicknesses to improve the luminous efficiency of the first light-emitting device 211 and the second light-emitting device 212, thereby improving the luminous efficiency of the display panel 100.
  • the plurality of light-emitting devices 210 further includes a third light-emitting device 213, which emits a different color than the first light-emitting device 211 and a different color than the second light-emitting device 212, so as to achieve full-color display.
  • the plurality of light extraction sections 51 also includes a third light extraction section 513.
  • the orthographic projection of the third light-emitting device 213 on the substrate 10 is located within the range of the orthographic projection of the third light extraction section 513 on the substrate 10.
  • the thickness of the third light extraction section 513 is not equal to the thickness of the first light extraction section 511, and is not equal to the thickness of the second light extraction section 512.
  • the first light extraction section 511, the second light extraction section 512 and the third light extraction section 513 can all be adapted to the corresponding thickness to improve the luminous efficiency of the first light-emitting device 211 and the second light-emitting device 212, thereby improving the luminous efficiency of the display panel 100.
  • the first light-emitting device 211 emits red light
  • the third light-emitting device 213 emits green light
  • the second light-emitting device 212 emits blue light.
  • the thickness of the first light extraction section 511 and/or the third light extraction section 513 is greater than the thickness of the second light extraction section 512. And/or, the thickness of the third light extraction section 513 is less than the thickness of the first light extraction section 511.
  • Figure 11 shows the test simulation results of the relationship between the luminous efficiency of multiple light-emitting devices with different luminous colors and the thickness of the light extraction layer according to some embodiments.
  • the thickness of the first light extraction portion 511 and/or the third light extraction portion 513 is greater than the thickness of the second light extraction portion 512
  • the luminous efficiency of the first light-emitting device 211 and/or the third light-emitting device 213 can be improved.
  • the thickness of the third light extraction portion 513 is less than the thickness of the first light extraction portion 511, it is beneficial to further...
  • the luminous efficiency of the first light-emitting device 211 is gradually improved.
  • the thickness of the first light extraction section 511 is greater than or equal to 70 nm and less than 80 nm.
  • the thickness of the first light extraction section 511 is any one of 70 nm, 72 nm, 73.5 nm, 75 nm, 77 nm, 78 nm, and 79.5 nm.
  • the thickness of the second light extraction section 512 is greater than or equal to 45 nm and less than 60 nm.
  • the thickness of the second light extraction section 512 is 45 nm, 48 nm, 50 nm, 53 nm, 55 nm, 57 nm, 58 nm, and 59.5 nm.
  • the thickness of the third light extraction section is greater than or equal to 60 nm and less than 70 nm.
  • the thickness of the third light extraction section is any one of 60 nm, 63 nm, 65 nm, 66 nm, 68 nm, and 69.5 nm.
  • the first light-emitting device 211, the second light-emitting device 212 and the third light-emitting device 213 have high luminous efficiency, which can further improve the luminous efficiency of the display panel 100.
  • the display panel 100 further includes a transparent conductive layer 60, which is connected to the second electrode layer 40 to reduce the resistance of the second electrode layer 40 and reduce the current drop that occurs when current flows through it, thereby improving the brightness uniformity of the display panel 100.
  • the transparency of the transparent conductive layer 60 is greater than or equal to 98%.
  • the material of the transparent conductive layer 60 includes any one of indium tin oxide, indium zinc oxide, indium gallium zinc oxide, and tin oxide.
  • the transparent conductive layer 60 is disposed between the light extraction layer 50 and the second electrode layer 40. This allows for an increase in the thickness of the conductive layer (the second electrode layer 40 and the transparent conductive layer 60) that transmits current with minimal impact on the luminous efficiency of the light-emitting device 210. Based on the resistance formula, the resistance of the conductive layer that transmits current can be reduced, thereby reducing the current drop that occurs when current flows through it, and thus improving the brightness uniformity of the display panel 100.
  • the resistance formula is as follows:
  • R resistance
  • ⁇ resistivity
  • d the thickness of the conductive layer that carries the current.
  • the thickness of the transparent conductive layer 60 can be 1 nm to 4 nm.
  • the thickness of the transparent conductive layer 60 can be any one of 1 nm, 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm and 4 nm.
  • the transparent conductive layer 60 is disposed on the side of the light extraction layer 50 away from the second electrode layer 40.
  • the transparent conductive layer 60 and the second electrode layer 40 are connected in parallel, which can reduce the resistance of the conductive layer that transmits current, thereby reducing the corresponding current drop when the current flows through, thereby improving the brightness uniformity of the display panel 100.
  • the thickness of the transparent conductive layer 60 can be from 10 nm to 100 nm.
  • the thickness of the transparent conductive layer 60 can be any of 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm and 100 nm.
  • multiple light extraction sections 51 can be spaced apart, and the transparent conductive layer 60 makes electrical contact with the second electrode 41 between the multiple light extraction sections 51.
  • the multiple light extraction sections 51 can be spaced apart to facilitate the subsequent formation of the transparent conductive layer.
  • the transparent conductive layer 60 is in electrical contact with the second electrode 41, so there is no need to design a separate process for connecting the transparent conductive layer 60 and the second electrode 41, which can simplify the process and reduce the manufacturing cost.
  • the transparent conductive layer 60 when the transparent conductive layer 60 is disposed on the side of the light extraction layer 50 away from the second electrode layer 40, the transparent conductive layer 60 and the light extraction layer 50 can be in direct contact, or other film layers can be disposed in between.
  • the transparent conductive layer 60 is disposed on the side of the light extraction layer 50 away from the second electrode layer 40, and the transparent conductive layer 60 is in direct contact with the light extraction layer 50, that is, no other film layer is disposed between the transparent conductive layer 60 and the light extraction layer 50.
  • the transparent conductive layer 60 can be directly formed on the light extraction layer 50 by a deposition process, thereby improving the thickness uniformity of the transparent conductive layer 60.
  • a transparent conductive layer 60 is disposed on the side of the light extraction layer 50 away from the second electrode layer 40, and a protective layer 70 is disposed between the transparent conductive layer 60 and the light extraction layer 50 to regulate light extraction and protect the light extraction layer 50.
  • the material of the protective layer 70 may include a high-refractive-index material to improve light extraction efficiency.
  • the material of the protective layer 70 may include lithium fluoride. In this case, lithium fluoride also has a protective effect against ultraviolet light, which can reduce the impact of ultraviolet light irradiation in subsequent processes on the light-emitting device 210.
  • the display panel 100 further includes an encapsulation layer 80, which is disposed on the side of the second electrode layer 40 away from the substrate 10 to reduce the risk of display panel 100 failure due to water and oxygen corrosion.
  • the encapsulation layer 80 can be an encapsulation film or an encapsulation substrate.
  • the encapsulation layer 80 includes at least one inorganic encapsulation layer 81, the material of which includes at least one of silicon oxide, silicon oxynitride, and aluminum oxide.
  • the inorganic encapsulation layer 81 closest to the substrate 10 in at least one inorganic encapsulation layer 81 includes a first sub-encapsulation layer 811 and a second sub-encapsulation layer 812 stacked together.
  • the second sub-encapsulation layer 812 is disposed on the side of the first sub-encapsulation layer 811 away from the substrate 10, and the refractive index of the first sub-encapsulation layer 811 is less than the refractive index of the second sub-encapsulation layer 812, so as to play the role of light extraction and improve the luminous efficiency of the light-emitting device 210.
  • the encapsulation layer 80 includes a first inorganic encapsulation layer 82, a first organic encapsulation layer 83, and a second inorganic encapsulation layer 84 stacked sequentially, with the second inorganic encapsulation layer 84 located on the side of the first inorganic encapsulation layer 82 away from the substrate 10.
  • the first inorganic encapsulation layer 82 may include a first sub-encapsulation layer 811 and a second sub-encapsulation layer 812 stacked.
  • the material of the first organic encapsulation layer 83 includes methyl methacrylate.
  • the refractive index of the first sub-encapsulation layer 811 can be from 1.4 to 1.5.
  • the refractive index of the first sub-encapsulation layer 811 can be any one of 1.4, 1.42, 1.43, 1.45, 1.46, 1.48, and 1.5.
  • the refractive index of the second sub-encapsulation layer 812 can be from 1.6 to 1.7.
  • the refractive index of the second sub-encapsulation layer 812 can be any one of 1.6, 1.62, 1.63, 1.65, 1.66, 1.68, and 1.7.
  • the first sub-encapsulation layer 811 is made of silicon oxide, and the second sub-encapsulation layer 812 is made of silicon oxynitride, to achieve better water and oxygen isolation. Furthermore, the first sub-encapsulation layer 811 can be fabricated using hydrogen bombardment of a target material. The plasma energy is relatively low, which reduces the risk of cracks or tears in the transparent conductive layer 60 above the light extraction layer 50.
  • the target material may include silicon.
  • the ratio of the thickness of the first sub-encapsulation layer 811 to the thickness of the second sub-encapsulation layer 812 affects the luminous efficiency of the light-emitting device 210. Based on this, the luminous efficiency of the light-emitting device 210 can be improved by adjusting the thickness of the first sub-encapsulation layer 811 and the second sub-encapsulation layer 812.
  • Figure 15 shows the test simulation results of the luminous efficiency of the first light-emitting device according to some embodiments, with respect to the thickness of the second sub-encapsulation layer under different thicknesses of the first sub-encapsulation layer;
  • Figure 16 shows the test simulation results of the luminous efficiency of the second light-emitting device according to some embodiments, with respect to the thickness of the second sub-encapsulation layer under different thicknesses of the first sub-encapsulation layer;
  • Figure 17 shows the test simulation results of the luminous efficiency of the third light-emitting device according to some embodiments, with respect to the thickness of the second sub-encapsulation layer under different thicknesses of the first sub-encapsulation layer.
  • the thickness of the first sub-encapsulation layer 811 is 40nm to 80nm
  • the thickness of the second sub-encapsulation layer 812 is 800nm to 1000nm
  • the luminous efficiency of the light-emitting device 210 is relatively high.
  • the ratio of the thickness of the first sub-encapsulation layer 811 to the thickness of the second sub-encapsulation layer 812 is not the same.
  • the thickness of the first sub-encapsulation layer 811 and the second sub-encapsulation layer 812 can be designed to be different for light-emitting devices 210 with different luminous colors, so as to improve the luminous efficiency of light-emitting devices 210 with different luminous colors.
  • the first sub-encapsulation layer 811 includes a first sub-part 801, a second sub-part 802 and a third sub-part 803, and the second sub-encapsulation layer 812 includes a fourth sub-part 804, a fifth sub-part 805 and a sixth sub-part 806.
  • the orthographic projection of the first light-emitting device 211 onto the substrate 10 lies within the range of the orthographic projection of the first sub-part 801 onto the substrate 10, and also within the range of the orthographic projection of the fourth sub-part 804 onto the substrate 10.
  • the orthographic projection of the second light-emitting device 212 onto the substrate 10 lies within the range of the orthographic projection of the second sub-part 802 onto the substrate, and also within the range of the orthographic projection of the fifth sub-part 805 onto the substrate 10.
  • the orthographic projection of the third light-emitting device 213 onto the substrate 10 lies within the range of the orthographic projection of the third sub-part 803 onto the substrate 10, and also within the range of the orthographic projection of the sixth sub-part 806 onto the substrate 10.
  • the thickness of the first sub-part 801 is 40nm to 80nm
  • the thickness of the fourth sub-part 804 is 840nm to 960nm
  • the luminous efficiency of the first light-emitting device 211 is high.
  • the thickness of the second sub-part 802 is 40nm to 80nm
  • the thickness of the fifth sub-part 805 is 800nm to 1000nm
  • the luminous efficiency of the second light-emitting device 212 is high.
  • the thickness of the third sub-part 803 is 40nm to 80nm
  • the thickness of the sixth sub-part 806 is 800nm to 1000nm
  • the luminous efficiency of the third light-emitting device 213 is high.
  • the thickness of the first sub-part 801 is 40 nm, and the thickness of the fourth sub-part 804 is 880 nm to 960 nm.
  • the thickness of the first sub-part 801 is 60 nm, and the thickness of the fourth sub-part 804 is 860 nm to 950 nm.
  • the thickness of the first sub-part 801 is 80 nm, and the thickness of the fourth sub-part 804 is 840 nm to 950 nm.
  • the thickness of the second sub-part 802 is any one of 40nm, 60nm or 80nm
  • the thickness of the fifth sub-part 805 is 800nm to 1000nm.
  • the thickness of the third sub-part 803 is any one of 40nm, 60nm or 80nm
  • the thickness of the sixth sub-part 806 is 800nm to 1000nm.
  • first sub-part 801, the second sub-part 802, and the third sub-part 803 may have the same thickness, and/or at least two of the fourth sub-part 804, the fifth sub-part 805, and the sixth sub-part 806 may have the same thickness, so as to reduce the photolithography process, simplify the process flow, reduce the preparation cost, and improve the production efficiency when the luminous efficiency is high.
  • the thicknesses of the first sub-part 801, the second sub-part 802, and the third sub-part 803 are equal; for instance, the thickness of each sub-part 801, the second sub-part 802, and the third sub-part 803 is 80 nm.
  • the thicknesses of the fourth sub-part 804, the fifth sub-part 805, and the sixth sub-part 806 can be 860 nm to 910 nm, 820 nm to 860 nm, and 800 nm to 840 nm, respectively.
  • the fifth sub-part 805 may also have the same thickness as the fourth sub-part 804 or the sixth sub-part 806, or they may not; this disclosure does not specifically limit this.
  • the fourth sub-part 804, the fifth sub-part 805, and the sixth sub-part 806 have equal thicknesses; for instance, the thickness of each sub-part 804, the fifth sub-part 805, and the sixth sub-part 806 is 880 nm.
  • the first sub-part 801, the second sub-part 802, and the third sub-part 803 can be 60 nm to 80 nm, 40 nm to 80 nm, and 40 nm to 60 nm, respectively.
  • at least two of the first sub-part 801, the second sub-part 802, and the third sub-part 803 can also have equal thicknesses; of course, the thicknesses of all three sub-parts can also be unequal, and this disclosure does not specifically limit this aspect.
  • the encapsulation layer 80 includes a first inorganic encapsulation layer 82, a first organic encapsulation layer 83 and a second inorganic encapsulation layer 84 stacked sequentially, wherein the second inorganic encapsulation layer 84 is located on the side of the first inorganic encapsulation layer 82 away from the substrate 10.
  • the first inorganic encapsulation layer 82 may include a single inorganic encapsulation layer 81 or multiple stacked inorganic encapsulation layers 81, such as the first sub-encapsulation layer 811 and the second sub-encapsulation layer 812 mentioned above.
  • the refractive index of the first inorganic encapsulation layer 82 can be, for example, 1.45 to 1.5.
  • the refractive index of the first inorganic encapsulation layer 82 can be 1.45, 1.47, or 1.5.
  • the lower the refractive index of the first inorganic encapsulation layer 82 the higher the luminous efficiency of the light-emitting device 210.
  • Figure 19 shows the test simulation results of the luminous efficiency of the first light-emitting device according to some embodiments, under different refractive indices of the first inorganic encapsulation layer, and the relationship between the thickness ratio of the first inorganic encapsulation layer and the light extraction layer;
  • Figure 20 shows the test simulation results of the luminous efficiency of the second light-emitting device according to some embodiments, under different refractive indices of the first inorganic encapsulation layer, and the relationship between the thickness ratio of the first inorganic encapsulation layer and the light extraction layer;
  • Figure 21 shows the test simulation results of the luminous efficiency of the third light-emitting device according to some embodiments, under different refractive indices of the first inorganic encapsulation layer, and the relationship between the thickness ratio of the first inorganic encapsulation layer and the light extraction layer.
  • the lower the refractive index of the first inorganic encapsulation layer 82 the higher the luminous efficiency of the light-
  • the ratio of the thickness of the first inorganic encapsulation layer 82 to the thickness of the light extraction section 51 affects the luminous efficiency of the light-emitting device 210, the brightness attenuation at the viewing angle, and the color shift.
  • the thickness ratio of the first inorganic encapsulation layer 82 to the thickness of the first light extraction portion 511 is 2 to 2.4
  • the thickness ratio of the first inorganic encapsulation layer 82 to the thickness of the second light extraction portion 512 is 1 to 2.4
  • the light-emitting device 210 includes...
  • the light extraction section 51 includes a third light extraction section 513.
  • the ratio of the thickness of the first inorganic encapsulation layer 82 to the thickness of the third light extraction section 513 is 2 to 2.4.
  • the thickness ratio of the first inorganic encapsulation layer 82 to the thickness of the first light extraction section 511 is 2–2.4
  • the luminous efficiency of the first light-emitting device 211 is relatively high.
  • the thickness ratio of the first inorganic encapsulation layer 82 to the thickness of the second light extraction section 512 is 1–2.4
  • the luminous efficiency of the second light-emitting device 212 is relatively high.
  • the thickness ratio of the first inorganic encapsulation layer 82 to the thickness of the third light extraction section 513 is 2–2.4, the luminous efficiency of the third light-emitting device 213 is relatively high.
  • Figure 22 shows the simulation results of the brightness attenuation of the illumination intensity of the first light-emitting device according to some embodiments under different viewing angles
  • Figure 23 shows the simulation results of the brightness attenuation of the illumination intensity of the second light-emitting device according to some embodiments under different viewing angles
  • Figure 24 shows the simulation results of the brightness attenuation of the illumination intensity of the third light-emitting device according to some embodiments under different viewing angles
  • Figure 25 shows the simulation results of the brightness attenuation of the illumination intensity of white light mixed from multiple light-emitting devices according to some embodiments under different viewing angles.
  • the thickness ratio of the first inorganic encapsulation layer 82 to the thickness of the first light extraction section 511 is 2 to 2.4
  • the brightness decay rate of the first light-emitting device 211 at a viewing angle of 0° to 60° decreases.
  • the thickness ratio of the first inorganic encapsulation layer 82 to the thickness of the second light extraction section 512 is 1 to 2.4
  • the brightness decay rate of the second light-emitting device 212 at a viewing angle of 0° to 60° decreases.
  • the brightness decay rate of the third light-emitting device 213 at a viewing angle of 0° to 60° decreases. Furthermore, when the light emitted by the first light-emitting device 211, the second light-emitting device 212, and the third light-emitting device 213 is mixed to produce white light, the brightness decay rate of the display panel 100 at a viewing angle of 0° to 60° decreases, which is beneficial for improving the display effect at different viewing angles.
  • Figure 26 shows the simulation results of the color shift of the first light-emitting device according to some embodiments under different viewing angles
  • Figure 27 shows the simulation results of the color shift of the second light-emitting device according to some embodiments under different viewing angles
  • Figure 28 shows the simulation results of the color shift of the third light-emitting device according to some embodiments under different viewing angles
  • Figure 29 shows the simulation results of the color shift of white light mixed from multiple light-emitting devices according to some embodiments under different viewing angles.
  • the thickness ratio of the first inorganic encapsulation layer 82 to the thickness of the first light extraction section 511 is 2 to 2.4
  • the Just Noticeable Color Difference (JNCD) value of the first light-emitting device 211 at a viewing angle of 0° to 60° decreases.
  • the thickness ratio of the first inorganic encapsulation layer 82 to the thickness of the second light extraction section 512 is 1 to 2.4
  • the color shift value of the second light-emitting device 212 at a viewing angle of 0° to 60° decreases.
  • the color shift value of the third light-emitting device 213 at a viewing angle of 0° to 60° decreases. Furthermore, when the light emitted by the first light-emitting device 211, the second light-emitting device 212, and the third light-emitting device 213 is mixed to produce white light, the color shift of the display panel 100 at viewing angles of 0° to 60° is reduced, which is beneficial to improving the display effect at different viewing angles.
  • the display panel 100 further includes a pixel defining layer 91 and a light blocking structure 92.
  • the pixel defining layer 91 is disposed on the side of the first electrode layer 20 away from the substrate 10, and the light blocking structure 92 is disposed on the side of the pixel defining layer 91 away from the substrate 10, and surrounds the periphery of the light-emitting device 210 to separate adjacent light-emitting devices 210. This reduces the risk of color shift caused by color crosstalk between adjacent light-emitting devices 210.
  • the pixel defining layer 91 has multiple openings, and one light-emitting device 210 is located in one opening.
  • the light-blocking structure 92 is disposed between the pixel defining layer 91 and the encapsulation layer 80. Furthermore, the light-blocking structure 92 can contact the surface of the pixel defining layer 91 away from the substrate 10. That is, the light-blocking structure 92 can penetrate the transparent conductive layer 60, the light extraction layer 50, and the second electrode layer 40. Alternatively, the light-blocking structure 92 contacts the surface of the second electrode layer 40 away from the substrate 10; that is, the light-blocking structure 92 can penetrate the transparent conductive layer 60 and the light extraction layer 50, and stop at the second electrode layer 40, contacting the surface of the second electrode layer 40 away from the substrate 10.
  • the light-blocking structure 92 may include a first blocking layer 921 and a second blocking layer 922.
  • the second blocking layer 922 is disposed on the side of the first blocking layer 921 away from the substrate 10, and the orthographic projection of the first blocking layer 921 on the substrate 10 is within the range of the orthographic projection of the second blocking layer 922 on the substrate 10.
  • the first blocking layer 921 can contact the surface of the pixel defining layer 91 or the second electrode layer 40 away from the substrate 10.
  • the area of the orthographic projection of the first blocking layer 921 on the substrate 10 can be set to be relatively small, facilitating the fabrication process of the first blocking layer 921.
  • the area of the orthographic projection of the second blocking layer 922 on the substrate 10 can be set to be relatively large. This allows for a reduction in the height of the light-blocking structure 92 while effectively preventing color mixing between adjacent light-emitting devices 210, thus reducing the thickness of the display panel 100.
  • the material of the first barrier layer 921 may include a conductive material.
  • the transparent conductive layer 60 and the second electrode layer 40 can also be electrically connected through the first barrier layer 921, which can reduce the resistance of the conductive layer that transmits current, thereby reducing the current drop when the current flows through, and thus improving the brightness uniformity of the display panel 100.
  • the material of the first barrier layer 921 includes a metallic material, such as at least one of silver, magnesium, copper, aluminum, platinum, palladium, gold, nickel, neodymium, iridium, chromium, lithium, calcium, lithium fluoride, molybdenum, titanium, indium, tin, zinc, and ytterbium and their oxides.
  • the material of the second barrier layer 922 may include a conductive material or an insulating material.
  • the material of the first barrier layer 921 includes an insulating material, and the fabrication process is simple.
  • the material of the first barrier layer 921 includes at least one of silicon oxide, silicon nitride, and silicon oxynitride.
  • Some embodiments of this disclosure also provide a method for manufacturing a display panel 100, as shown in FIG30, including steps S100 to S200.
  • a first electrode layer 20 and a light-emitting functional layer 30 are sequentially formed on the substrate 10.
  • the first electrode layer 20 includes a plurality of first electrodes 21, and the light-emitting functional layer 30 includes a plurality of light-emitting parts 31.
  • the structure and materials of the first electrode layer 20 and the light-emitting functional layer 30 can be referred to above, and will not be repeated here.
  • the first electrode layer 20 can be formed by vapor deposition and/or photolithography, and the light-emitting functional layer 30 can be formed by vapor deposition. This disclosure does not specifically limit the specific application of the first electrode layer 20.
  • a second electrode layer 40 is formed on the side of the light-emitting functional layer 30 away from the substrate 10 using photolithography.
  • the second electrode layer 40 includes a plurality of second electrodes 41.
  • the orthographic projections of the second electrodes 41, the light-emitting portion 31, and the first electrode 21 on the substrate 10 at least partially overlap, and the overlapping portion forms a light emitter.
  • multiple light-emitting devices 210 include a first light-emitting device 211 and a second light-emitting device 212 with different light-emitting colors, and the thickness of the second electrode 41 of the first light-emitting device 211 and the second light-emitting device 212 is not equal.
  • the photolithography process includes the deposition process, the photoresist coating and exposure process, the development process, and the etching process performed in sequence.
  • the plurality of light-emitting devices 210 may further include a third light-emitting device 213, which emits a different color than both the first light-emitting device 211 and the second light-emitting device 212, to achieve full-color display.
  • the thickness of the second electrode 40 of the third light-emitting device 213 is not equal to that of the second light-emitting device 212.
  • the following uses multiple light-emitting devices 210, including a first light-emitting device 211, a second light-emitting device 212, and a third light-emitting device 213, as an example to illustrate some embodiments of this disclosure.
  • the implementation of this disclosure is not limited to this, and any other light-emitting device 210 can be considered, as long as the same technical concept is applied.
  • S200 includes S210 to S230.
  • the second electrode 41 of the first light-emitting device 211 is formed by photolithography.
  • a first conductive film 410' can first be formed using a deposition process; then, a first photoresist 41' is coated and exposed and developed, so that the first photoresist 41' covers the first light-emitting device 211 and exposes other light-emitting devices 210; finally, using the first photoresist 41' as a mask, the areas of the first conductive film 410' not covered by the first photoresist 41' are etched. After etching the areas of the first conductive film 410' not covered by the first photoresist 41', the first photoresist 41' can also be peeled off.
  • the second electrode 41 of the second light-emitting device 212 is formed by photolithography.
  • a solid-state second conductive film 420' can first be formed using a deposition process; then, a second photoresist 42' is coated and exposed and developed, so that the second photoresist 42' covers the second light-emitting device 212 and exposes other light-emitting devices 210; finally, using the second photoresist 42' as a mask, the areas of the second conductive film 420' not covered by the second photoresist 42' are etched. After etching the areas of the second conductive film 420' not covered by the second photoresist 42', the second photoresist 42' can also be peeled off.
  • the second electrode 41 of the third light-emitting device 213 is formed by photolithography.
  • a solid-layer third conductive film 430' can first be formed using a deposition process; then, a third photoresist 43' is coated and exposed and developed, so that the third photoresist 43' covers the third light-emitting device 213 and exposes other light-emitting devices 210; finally, using the third photoresist 43' as a mask, the areas of the third conductive film 430' not covered by the third photoresist 43' are etched. After etching the areas of the third conductive film 430' not covered by the third photoresist 43', the third photoresist 43' can also be peeled off.
  • the second electrode layer 40 can be prepared by photolithography, which eliminates the need for a high-precision mask required for the evaporation process.
  • the process is not limited by the raw materials of the high-precision mask or the preparation process of the high-precision mask, resulting in low preparation cost and enabling the display panel 100 to achieve a higher pixel density.
  • the above preparation method further includes S300.
  • a photoextraction layer 50 is formed on the side of the second electrode layer 40 away from the substrate 10 using a photolithography process.
  • the light extraction layer 50 includes multiple light extraction sections 51, each including a first light extraction section 511 and a second light extraction section 512.
  • the orthographic projection of the first light-emitting device 211 onto the substrate 10 is located within the range of the orthographic projection of the first light extraction section 511 onto the substrate 10.
  • the orthographic projection of the second light-emitting device 212 onto the substrate 10 is located within the range of the orthographic projection of the second light extraction section 512 onto the substrate 10.
  • the thickness of the first light extraction section 511 is not equal to the thickness of the second light extraction section 512.
  • the plurality of light-emitting devices 210 may further include a third light-emitting device 213.
  • the third light-emitting device 213 emits a different color than the first light-emitting device 211 and also a different color than the second light-emitting device 212, to achieve full-color display.
  • the plurality of light extraction sections 51 further include a third light extraction section 513.
  • the orthographic projection of the third light-emitting device 213 onto the substrate 10 is located within the range of the orthographic projection of the third light extraction section 513 onto the substrate 10.
  • the thickness of the third light extraction section 513 is not equal to the thickness of the first light extraction section 511 and also not equal to the thickness of the second light extraction section 512.
  • the fabrication methods for the first light extraction section 511, the second light extraction section 512, and the third light extraction section 513, which have different thicknesses, can refer to the fabrication process of the second electrode layer 40, and this embodiment does not specifically limit them. That is to say, the light extraction layer 50 can also be fabricated using photolithography, which eliminates the need for the high-precision mask required for the evaporation process. The process is not limited by the raw materials and fabrication process of the high-precision mask, resulting in low fabrication cost and enabling the display panel 100 to achieve a higher pixel density.
  • multiple light extraction portions 51 can be spaced apart so that the transparent conductive layer 60 formed in subsequent processes can make electrical contact with the second electrode 41 between the multiple light extraction portions 51.
  • the portion of the light extraction layer 50 located above the pixel defining layer 91 can be removed by photolithography, thereby spaced the multiple light extraction portions 51 and exposing the second electrode layer 40.
  • the above preparation method further includes steps S400 to S600.
  • a transparent conductive layer 60 is formed on the side of the light extraction layer 50 away from the substrate 10.
  • the transparent conductive layer 60 is connected to the second electrode layer 40 to reduce the resistance of the second electrode layer 40, thereby reducing the current drop that will occur when the current flows through it, and thus improving the brightness uniformity of the display panel 100.
  • the transparent conductive layer 60 can be formed by thin film deposition or sputtering, and is in electrical contact with the second electrode layer 40 between the spaced-apart light extraction portions 51.
  • the first sub-encapsulation layer 811 is formed by bombarding the target material with hydrogen gas.
  • the target material may include silicon
  • the material of the first sub-encapsulation layer 811 may include silicon oxide.
  • the target is formed by bombarding it with hydrogen gas, resulting in lower plasma energy, which can reduce the risk of cracks or tears in the transparent conductive layer 60 above the light extraction layer 50.
  • the refractive index and thickness of the first sub-encapsulation layer 811 can be referred to above, and will not be repeated here in the embodiments disclosed herein.
  • the first sub-encapsulation layer 811 includes a first sub-part 801, a second sub-part 802, and a third sub-part 803, and the first...
  • the fabrication methods for the first sub-part 801, 802, and 803 can refer to the fabrication process of the second electrode layer 40, and this embodiment does not impose specific limitations.
  • the first sub-encapsulation layer 811 can also be fabricated using photolithography, thus eliminating the need for a high-precision mask required for the evaporation process. The process is not limited by the raw materials or fabrication process of the high-precision mask, resulting in lower fabrication costs and enabling the display panel 100 to achieve higher pixel density.
  • Nitrogen-containing gas is used to bombard the target material to form the second sub-encapsulation layer 812.
  • the refractive index of the first sub-encapsulation layer 811 is lower than that of the second sub-encapsulation layer 812, so as to play a role in light extraction and improve the luminous efficiency of the light-emitting device 210.
  • the target material may include silicon
  • the material of the second sub-encapsulation layer 812 may include silicon oxynitride
  • the nitrogen-containing gas may include at least one of ammonia (NH3), nitrogen (N2), and nitrous oxide (N2O).
  • NH3 ammonia
  • N2O nitrous oxide
  • the refractive index and thickness of the second sub-encapsulation layer 812 can be referred to above, and will not be repeated here in this embodiment.
  • the fabrication methods of the fourth sub-part 804, fifth sub-part 805, and sixth sub-part 806 can refer to the fabrication process of the second electrode layer 40.
  • This embodiment of the present disclosure does not impose specific limitations here.
  • the second sub-encapsulation layer 812 can also be fabricated using photolithography. This eliminates the need for a high-precision mask required for the evaporation process, and the process is not limited by the raw materials or fabrication process of the high-precision mask. This results in lower fabrication costs and enables the display panel 100 to achieve a higher pixel density.
  • the above preparation method further includes S700 between S400 and S500.
  • S700 Forms a light-blocking structure 92.
  • the light blocking structure 92 is arranged around the periphery of the light-emitting device 210 to separate two adjacent light-emitting devices 210, thereby reducing the risk of color deviation caused by color crosstalk between adjacent light-emitting devices 210.
  • the display panel 100 further includes a pixel defining layer 91, which is disposed on the side of the first electrode layer 20 away from the substrate 10.
  • the pixel defining layer 91 has multiple openings, and a light-emitting device 210 is located in one opening.
  • a light-blocking structure 92 is disposed on the side of the pixel defining layer 91 away from the substrate 10 and can contact the surface of the pixel defining layer 91 away from the substrate 10. That is, the light-blocking structure 92 can penetrate the transparent conductive layer 60, the light extraction layer 50, and the second electrode layer 40.
  • the light-blocking structure 92 contacts the surface of the second electrode layer 40 away from the substrate 10; that is, the light-blocking structure 92 can penetrate the transparent conductive layer 60 and the light extraction layer 50, and stop at the second electrode layer 40, contacting the surface of the second electrode layer 40 away from the substrate 10.
  • the light blocking structure 92 may include a first blocking layer 921 and a second blocking layer 922, wherein the second blocking layer 922 is disposed on the side of the first blocking layer 921 away from the substrate 10, and the orthogonal projection of the first blocking layer 921 on the substrate 10 is within the range of the orthogonal projection of the second blocking layer 922 on the substrate 10.
  • the first barrier layer 921 can contact the surface of the pixel defining layer 91 or the second electrode layer 40 away from the substrate 10.
  • the area of the orthogonal projection of the first barrier layer 921 onto the substrate 10 can be set to be relatively small, facilitating the first barrier...
  • the process of fabricating layer 921; and the area of the orthogonal projection of the second barrier layer 922 on the substrate 10 can be set to be large, so that the height of the light barrier structure 92 can be reduced while effectively avoiding color crosstalk between adjacent light-emitting devices 210, which is conducive to reducing the thickness of the display panel 100.
  • first barrier layer 921 and the second barrier layer 922 can be referred to above, and will not be repeated here in the embodiments disclosed herein.

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  • Electroluminescent Light Sources (AREA)

Abstract

一种显示面板包括衬底、第一电极层、发光功能层和第二电极层。第一电极层设置于衬底的一侧；且，第一电极层包括多个第一电极。发光功能层设置于第一电极层远离衬底的一侧；且，发光功能层包括多个发光部。第二电极层设置于发光功能层远离衬底的一侧；且，第二电极层包括多个第二电极。第二电极、发光部和第一电极在衬底上的正投影至少部分重合，且重合的部分形成发光器件。其中，多个发光器件包括发光颜色不同的第一发光器件和第二发光器件，第一发光器件与第二发光器件的第二电极的厚度不相等。

Description

显示面板及其制备方法、显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种显示面板及其制备方法、显示装置。
背景技术
随着显示技术的飞速发展，显示装置已经逐渐遍及在人们的生活中。其中，有机发光二极管(Organic Light Emitting Diode，简称OLED)由于具有自发光、低功耗、宽视角、响应速度快、高对比度以及柔性显示等优点，因而被广泛的应用于手机、电视、笔记本电脑等智能产品中。
发明内容
一方面，提供一种显示面板。所述显示面板包括衬底、第一电极层、发光功能层和第二电极层。所述第一电极层设置于所述衬底的一侧；且，所述第一电极层包括多个第一电极。所述发光功能层设置于所述第一电极层远离所述衬底的一侧；且，所述发光功能层包括多个发光部。所述第二电极层设置于所述发光功能层远离所述衬底的一侧；且，所述第二电极层包括多个第二电极。所述第二电极、所述发光部和所述第一电极在所述衬底上的正投影至少部分重合，且重合的部分形成发光器件。其中，多个所述发光器件包括发光颜色不同的第一发光器件和第二发光器件，所述第一发光器件与所述第二发光器件的第二电极的厚度不相等。
在一些实施例中，多个所述发光器件还包括第三发光器件，所述第三发光器件与所述第一发光器件的发光颜色不同，且与所述第二发光器件的发光颜色不同；所述第三发光器件与所述第二发光器件的第二电极的厚度不相等。
在一些实施例中，所述第一发光器件和所述第三发光器件中，一者的发光颜色为红色，另一者的发光颜色为绿色，所述第二发光器件的发光颜色为蓝色。所述第一发光器件和/或所述第三发光器件的第二电极的厚度，大于所述第二发光器件的第二电极的厚度。
在一些实施例中，所述第三发光器件的第二电极的厚度等于所述第一发光器件的第二电极的厚度。
在一些实施例中，所述第一发光器件和所述第三发光器件的第二电极的厚度为13nm～16nm，所述第二发光器件的第二电极的厚度为10nm～12nm。
在一些实施例中，所述第二电极在所述衬底上的正投影的面积，与所述发光器件在所述衬底上的正投影的面积的比值为1～1.2。
在一些实施例中，所述显示面板还包括光取出层，所述光取出层设置于所述第二电极层远离所述衬底的一侧。所述光取出层包括多个光取出部，所述多个光取出部包括第一光取出部和第二光取出部。所述第一发光器件在所述衬底上的正投影，位于所述第一光取出 部在所述衬底上的正投影的范围内。所述第二发光器件在所述衬底上的正投影，位于所述第二光取出部在所述衬底上的正投影的范围内；且，所述第一光取出部的厚度与所述第二光取出部的厚度不相等。
在一些实施例中，多个所述发光器件还包括第三发光器件，所述多个光取出部还包括第三光取出部，所述第三发光器件在所述衬底上的正投影，位于所述第三光取出部在所述衬底上的正投影的范围内。且，所述第三光取出部的厚度与所述第一光取出部的厚度不相等，且与所述第二光取出部的厚度不相等。
在一些实施例中，所述第一发光器件的发光颜色为红色，所述第二发光器件的发光颜色为蓝色，所述第三发光器件的发光颜色为绿色。所述第一光取出部和/或所述第三光取出部的厚度大于所述第二光取出部的厚度；和/或，所述第三光取出部的厚度小于所述第一光取出部的厚度。
在一些实施例中，所述第一光取出部的厚度大于或等于70nm，且小于80nm；所述第二光取出部的厚度大于或等于45nm，且小于60nm；所述第三光取出部的厚度大于或等于60nm，且小于70nm。
在一些实施例中，所述第一电极在所述衬底上的正投影，位于所述光取出部在所述衬底上的正投影的范围内。且，所述光取出部在所述衬底上的正投影的边界，与所述第一电极在所述衬底上的正投影的边界之间的距离为2μm～8μm。
在一些实施例中，所述的显示面板还包括封装层，所述封装层设置于所述发光器件远离所述衬底的一侧。所述封装层包括依次叠置的第一无机封装层、第一有机封装层和第二无机封装层，所述第二无机封装层位于所述第一无机封装层远离所述衬底的一侧。其中，所述第一无机封装层的厚度与所述第一光取出部的厚度比值为2～2.4，所述第一无机封装层的厚度与所述第二光取出部的厚度比值为1～2.4。
在一些实施例中，多个所述发光器件还包括第三发光器件，所述多个光取出部还包括第三光取出部，所述第三发光器件在所述衬底上的正投影，位于所述第三光取出部在所述衬底上的正投影的范围内；所述第一无机封装层的厚度与所述第三光取出部的厚度比值为2～2.4。
在一些实施例中，所述显示面板还包括透明导电层，所述透明导电层设置于所述光取出层和所述第二电极层之间，或所述光取出层远离所述第二电极层的一侧。且，所述透明导电层与所述第二电极层连接。
在一些实施例中，所述透明导电层设置于所述光取出层远离所述第二电极层的一侧。所述多个光取出部间隔设置，且所述透明导电层在所述多个光取出部之间与所述第二电极电接触。
在一些实施例中，所述透明导电层设置于所述光取出层远离所述第二电极层的一侧， 且所述透明导电层与所述光取出层直接接触。
在一些实施例中，所述显示面板还包括封装层，所述封装层设置于所述第二电极层远离所述衬底的一侧。所述封装层包括至少一层无机封装层，所述至少一层无机封装层中最靠近所述衬底的无机封装层包括叠置的第一子封装层和第二子封装层，所述第二子封装层设置于所述第一子封装层远离所述衬底的一侧，且所述第一子封装层的折射率小于所述第二子封装层的折射率。
在一些实施例中，所述第一子封装层的厚度为40nm～80nm，所述第二子封装层的厚度为800nm～1000nm。
在一些实施例中，所述第一子封装层的材料包括氧化硅，所述第二子封装层的材料包括氮氧化硅。
在一些实施例中，所述显示面板还包括像素界定层和光阻隔结构。所述像素界定层设置于所述第一电极层远离所述衬底的一侧。所述光阻隔结构设置于所述像素界定层远离所述衬底的一侧，且环绕所述发光器件的周侧。
另一方面，提供一种显示装置。所述显示装置包括如上述任一实施例所述的显示面板和电路板，所述电路板与所述显示面板连接。
又一方面，提供一种显示面板的制备方法。所述显示面板的制备方法包括：在衬底的一侧依次形成第一电极层和发光功能层。所述第一电极层包括多个第一电极，所述发光功能层包括多个发光部。
采用光刻工艺，在所述发光功能层远离所述衬底的一侧形成第二电极层。所述第二电极层包括多个第二电极；所述第二电极、所述发光部和所述第一电极在所述衬底上的正投影至少部分重合，且重合的部分形成发光器件。其中，多个所述发光器件包括发光颜色不同的第一发光器件和第二发光器件，所述第一发光器件与所述第二发光器件的第二电极的厚度不相等。
在一些实施例中，所述制备方法还包括：采用光刻工艺，在所述第二电极层远离所述衬底的一侧形成光取出层；所述光取出层包括多个光取出部，所述多个光取出部包括第一光取出部和第二光取出部，所述第一发光器件在所述衬底上的正投影，位于所述第一光取出部在所述衬底上的正投影的范围内；所述第二发光器件在所述衬底上的正投影，位于所述第二光取出部在所述衬底上的正投影的范围内；且，所述第一光取出部的厚度与所述第二光取出部的厚度不相等。
在一些实施例中，所述制备方法还包括：在所述光取出层远离所述衬底的一侧形成透明导电层；所述透明导电层与所述第二电极层连接。利用氢气轰击靶材，形成第一子封装层。采用含氮气体轰击靶材，形成第二子封装层；所述第一子封装层的折射率小于所述第二子封装层的折射率。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。
图1为根据一些实施例的一种显示装置的结构图；
图2为根据一些实施例的另一种显示装置的结构图；
图3为图1中所示的显示装置沿剖面线A-A处的剖视图；
图4为根据一些实施例的一种显示面板的剖视图；
图5为根据一些实施例的一种发光器件的剖视图；
图6为根据一些实施例的另一种发光器件的剖视图；
图7为根据一些实施例的另一种显示面板的剖视图；
图8为根据一些实施例的第一发光器件的发光效率与第二电极的反射率的关系的仿真结果图；
图9为根据一些实施例的第二发光器件的发光效率与第二电极的反射率的关系的仿真结果图；
图10为根据一些实施例的第三发光器件的发光效率与第二电极的反射率的关系的仿真结果图；
图11为根据一些实施例的发光颜色不同的多个发光器件的发光效率与光取出层的厚度的关系的仿真结果图；
图12为根据一些实施例的再一种显示面板的剖视图；
图13为根据一些实施例的又一种显示面板的剖视图；
图14为根据一些实施例的又一种显示面板的剖视图；
图15为根据一些实施例的第一发光器件的发光效率，在不同的第一子封装层的厚度下，与第二子封装层的厚度的关系的仿真结果图；
图16为根据一些实施例的第二发光器件的发光效率，在不同的第一子封装层的厚度下，与第二子封装层的厚度的关系的仿真结果图；
图17为根据一些实施例的第三发光器件的发光效率，在不同的第一子封装层的厚度下，与第二子封装层的厚度的关系的仿真结果图；
图18为根据一些实施例的又一种显示面板的剖视图；
图19为根据一些实施例的第一发光器件的发光效率，在不同的第一无机封装层的折射率下，与第一无机封装层与光取出层的厚度比值的关系的仿真结果图；
图20为根据一些实施例的第二发光器件的发光效率，在不同的第一无机封装层的折射率下，与第一无机封装层与光取出层的厚度比值的关系的仿真结果图；
图21为根据一些实施例的第三发光器件的发光效率，在不同的第一无机封装层的折射率下，与第一无机封装层与光取出层的厚度比值的关系的仿真结果图；
图22为根据一些实施例的第一发光器件的照明强度，在不同的视角下的亮度衰减的仿真结果图；
图23为根据一些实施例的第二发光器件的照明强度，在不同的视角下的亮度衰减的仿真结果图；
图24为根据一些实施例的第三发光器件的照明强度，在不同的视角下的亮度衰减的仿真结果图；
图25为根据一些实施例的多个发光器件混合的白光的照明强度，在不同的视角下的亮度衰减的仿真结果图；
图26为为根据一些实施例的第一发光器件在不同的视角下的色偏的仿真结果图；
图27为根据一些实施例的第二发光器件在不同的视角下的色偏的仿真结果图；
图28为根据一些实施例的第三发光器件在不同的视角下的色偏的仿真结果图；
图29为根据一些实施例的多个发光器件混合的白光在不同的视角下的色偏的仿真结果图；
图30和图31为根据一些实施例的显示面板的制备方法的流程图；
图32～图34为根据一些实施例的显示面板的制备方法的制备步骤图；
图35为根据一些实施例的显示面板的制备方法的流程图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在描述一些实施例时，可能使用了“连接”及其衍伸的表达。术语“连接”应做广义理解，例如，“连接”可以是机械连接，也可以是电连接；可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本文中的具体含义。
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。
“A和/或B”，包括以下三种组合：仅A，仅B，及A和B的组合。
本文中“适用于”或“被配置为”的使用意味着开放和包容性的语言，其不排除适用于或被配置为执行额外任务或步骤的设备。
另外，“基于”的使用意味着开放和包容性，因为“基于”一个或多个所述条件或值的过程、步骤、计算或其他动作在实践中可以基于额外条件或超出所述的值。
如本文所使用的那样，“平行”、“垂直”、“相等”包括所阐述的情况以及与所阐述的情况相近似的情况，该相近似的情况的范围处于可接受偏差范围内，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即，测量系统的局限性)所确定。例如，“平行”包括绝对平行和近似平行，其中近似平行的可接受偏差范围例如可以是5°以内偏差；“垂直”包括绝对垂直和近似垂直，其中近似垂直的可接受偏差范围例如也可以是5°以内偏差。“相等”包括绝对相等和近似相等，其中近似相等的可接受偏差范围内例如可以是相等的两者之间的差值小于或等于其中任一者的5％。
应当理解的是，当层或元件被称为在另一层或基板上时，可以是该层或元件直接在另一层或基板上，或者也可以是该层或元件与另一层或基板之间存在中间层。
本文参照作为理想化示例性附图的剖视图和/或平面图描述了示例性实施方式。在附图中，为了清楚，放大了层的厚度和区域的面积。因此，可设想到由于例如制造技术和/或公差引起的相对于附图的形状的变动。因此，示例性实施方式不应解释为局限于本文示出的区域的形状，而是包括因例如制造而引起的形状偏差。例如，示为矩形的蚀刻区域通常将具有弯曲的特征。因此，附图中所示的区域本质上是示意性的，且它们的形状并非旨在示出设备的区域的实际形状，并且并非旨在限制示例性实施方式的范围。
在本说明书中，除非另有定义，否则这里使用的所有术语(包括技术术语和科学术语)具有与本发明所属领域的普通技术人员所通常理解的意思相同的意思。将进一步理解，除非这里明确定义，否则术语(例如在通用的字典中定义的术语)应该被解释为具有与它们在相关领域的背景中的意思一致的意思，并且不应解释为理想的或过于形式化的意思。
术语“重叠”或“重合”意味着第一物体可在第二物体的上方或下方或者第二物体的侧面，并且反之亦然。另外，术语“重叠”可包括层叠、堆叠、面对或面向、在……上面延伸、覆盖或部分覆盖，或者由本领域普通技术人员将领会和理解的任何其他合适的术语。
当元件被描述为与另一元件“不重叠”、“错开”或“暴露”时，这可包括这些元件彼此间隔开、彼此偏移或彼此分开，或者由本领域普通技术人员将领会和理解的任何其他合适的术语。
术语“相对”意味着第一元件可与第二元件直接或间接相对。在第三元件介于第一元件和第二元件之间的情况下，尽管仍然彼此相对，但是第一元件和第二元件可被理解为彼此间接相对。
在本公开中，诸如“下”、“下方”、“上方”和“上”等类似词的术语用于解释附图中所示的部件的关系关联。术语可为相对概念并且基于附图中表示的方向来描述，也可以基于工艺步骤形成的先后顺序来描述，但是不限于此。
在本说明书中，当一个部件(或区、层、部分)被称为“覆盖”或“包覆”另一部件时，它能直接覆盖或包覆另一部件，或者也可存在居间的第三部件。
如图1所示，本公开的一些实施例提供一种显示装置1000，该显示装置1000可以是显示不论运动(例如，视频)还是固定(例如，静止图像)的且不论文字还是的图像的任何装置。
示例性地，该显示装置1000可以为电视机、笔记本电脑、平板电脑、个人数字助理(Personal Digital Assistant，简称PDA)、导航仪、车载显示器、飞行显示器、便携式显示产品、可穿戴设备、虚拟现实(Virtual Reality，简称VR)设备、增强现实(Augmented Reality，简称AR)设备、投影仪、计算器、全球定位系统(Global Positioning System，简称GPS)接收器/导航器、相机、电子广告牌或指示牌等任何具有显示功能的产品或者部件。
例如，如图1所示，该显示装置1000可以为便携式显示产品；如，该显示装置1000可以为图1所示的手机。又例如，参阅图2，该显示装置1000可以为可穿戴设备；如，该显示装置1000可以为图2中所示的手表。
根据不同的应用场景，显示装置1000可以为平面显示装置、曲面显示装置和折叠显示装置等，且显示装置1000的显示表面的形状可以为圆形、椭圆形、多边形或不规则图形中的任一者，本公开实施例在此不做具体限定。
下面以显示装置1000为图1所示的手机为例，对本公开的一些实施例进行示意性说 明，但是本公开的实施方式不限于此，并且也可以考虑任何其它显示装置，只要应用相同的技术思想即可。
在一些实施例中，参阅图3，显示装置1000包括显示面板100，显示面板100例如可以包括相对设置的显示侧和非显示侧，显示侧是指显示面板100显示画面的一侧，非显示侧是指与显示侧相对的另一侧。
上述显示面板100的类型包括多种，可以根据实际需要选择设置。示例性地，上述显示面板100可以为：有机发光二极管(Organic Light Emitting Diode，简称OLED)显示面板、量子点发光二极管(Quantum Dot Light Emitting Diode，简称QLED)显示面板、微型发光二极管(Micro/Mini Light Emitting Diodes，简称MLED)显示面板等，本公开实施例在此不做具体限定。
下面以上述显示面板100为OLED显示面板为例，对本公开的一些实施例进行示意性说明，但是本公开的实施方式不限于此，并且也可以考虑任何其它显示面板，只要应用相同的技术思想即可。
在一些实施例中，参阅图3，显示装置1000还可以包括壳体200、盖板300和电路板400以及其他电子配件。其中，显示面板100和电路板400可以设置在壳体200内。
示例性地，如图3所示，壳体200可以为具有开口的盒状结构，盖板300设置于显示面板100显示画面的一侧，且位于壳体200的开口处。显示面板100和电路板400可以设置于壳体200内，且电路板400可以在显示面板100的端部与显示面板100绑定，并弯折至显示面板100的背侧，以缩减显示面板100的边框，提高屏占比。
在一些实施例中，参阅图4，显示面板100包括衬底10和驱动电路层110，驱动电路层110设置于衬底10上。
参阅图4，衬底10可以为刚性衬底，也可以为柔性衬底。其中，刚性衬底的材料可以包括玻璃和/或聚甲基丙烯酸甲酯(Polymethyl Methacrylate，简称PMMA)。柔性衬底的材料可以包括聚对苯二甲酸乙二醇酯(Polyethylene Terephthalate，简称PET)、聚萘二甲酸乙二醇酯(Polyethylene Naphthalate Two Formic Acid Glycol Ester，简称PEN)和聚酰亚胺(Polyimide，简称PI)中的至少一者。
参阅图4，驱动电路层110包括像素电路111，像素电路111包括晶体管T。其中，驱动电路层110包括至少一层半导体层、多层导电层和多层绝缘层。示例性地，如图4所示，驱动电路层110包括依次设置的第一半导体层ACT1、栅绝缘层GI、第一栅导电层GT1、第一层间绝缘层ILD1、第二栅导电层GT2、第二层间绝缘层ILD2和第一源漏导电层SD。
需要说明的是，驱动电路层110还可以包括两层半导体层、三层栅导电层以及两层或更多层的源漏导电层，本公开实施例对此不做具体限定。
在一些实施例中，参阅图4，显示面板100还包括第一电极层20、发光功能层30和第 二电极层40。
参阅图4，第一电极层20设置于衬底10的一侧，且位于驱动电路层110远离衬底10的一侧。该第一电极层20和驱动电路层110之间可以设置有平坦层PLN。其中，第一电极层20包括多个第一电极21，第一电极21可以与像素电路111连接。该第一电极层20的材料包括银、镁、铜、铝、铂、钯、金、镍、钕、铱、铬、锂、钙、氟化锂、钼、钛、铟、锡、锌和镱及其氧化物中的至少一种。此外，第一电极层20可以为叠层结构，例如第一电极层20包括依次叠置的氧化铟锡层、银层和氧化铟锡层。
需要说明的是，第一电极层20的厚度可以为100nm～150nm。例如，第一电极层20的厚度可以为100nm、110nm、115nm、120nm、125nm、130nm、135nm、140nm、145nm和150nm中的任一者。
参阅图4和图5，发光功能层30设置于第一电极层20远离衬底10的一侧，且发光功能层30包括多个发光部31。在一些实施方式中，如图4所示，发光功能层30仅包括发光层310。在另一些实施方式中，如图6所示，发光功能层30除包括发光层310外，还包括电荷产生层320、电子传输层330(Election Transporting Layer，简称ETL)、电子注入层340(Election Injection Layer，简称EIL)、空穴传输层350(Hole Transporting Layer，简称HTL)和空穴注入层360(Hole Injection Layer，简称HIL)中的至少一种。
在一些示例性中，参阅图6，发光功能层30包括多层发光层310、电荷产生层320、电子传输层330、电子注入层340、空穴传输层350和空穴注入层360，以提高发光效率延长使用寿命。其中，电荷产生层320设置于相邻的两层发光层310之间，电子传输层330和电子注入层340设置于发光层310和第二电极层40之间，空穴传输层350和空穴注入层360设置于发光层310和第一电极层20之间。
在此基础上，如图6所示，电荷产生层320设置于相邻的两层发光层310之间，且电荷产生层320与靠近第一电极层20且相邻的一层发光层310之间，还可以设置有电子传输层330和电子注入层340，与靠近第二电极层40且相邻的另一层发光层310之间，还可以设置有空穴传输层350和空穴注入层360。
其中，发光层310的材料包括主体发光材料和掺杂到主体发光材料中的客体发光材料。例如，发光层310的材料可以包括室温下的热激活延迟荧光特性的发光材料、室温下荧光特性的发光材料和室温下磷光特性的发光材料中的任一者。电荷产生层320采用p-n结构形式构建，p型材料主要产生空穴，例如可以包括F4-TCNQ和/或HAT-CN等材料，n型掺杂材料是通过电子传输层330的材料掺杂低功函数金属，例如Alq3掺杂Mg，或Bphen掺杂Li。
可以理解的是，发出不同颜色的发光层310的厚度的范围并不一致。示例性地，发出红色光线的发光层310的厚度为280nm～350nm。例如，发出红色光线的发光层310的厚度 为280nm、290、300、310、320、330、340和350nm中的任一者。示例性地，发出绿色光线的发光层310的厚度为200nm～250nm。例如，发出红色光线的发光层310的厚度为200nm、210nm、215nm、220nm、225nm、230nm、240nm和250nm中的任一者。示例性地，发出蓝色光线的发光层310的厚度为150nm～200nm。例如，发出红色光线的发光层310的厚度为150nm、160nm、165nm、170nm、175nm、180nm、190nm和200nm中的任一者。
此外，电子传输层330和空穴传输层350的材料包括芳胺类空穴传输材料、二甲基芴类空穴传输材料、咔唑类空穴传输材料中的至少一种。电子注入层340和空穴注入层360的材料包括强吸电子体系的p型掺杂剂和空穴传输材料。
参阅图4，第二电极层40设置于发光功能层30远离衬底10的一侧。其中，第二电极层40、多个发光部31和多个第一电极21三者在衬底10上的正投影重叠的部分，可分别构成间隔设置的多个发光器件210。此时，第一电极21和第二电极层40分别向发光部31注入空穴和电子，当空穴和电子结合产生的激子从激发态跃迁到基态时构成发光。
需要说明的是，第二电极层40的材料包括银、镁、铜、铝、铂、钯、金、镍、钕、铱、铬、锂、钙、氟化锂、钼、钛、铟、锡、锌和镱及其氧化物中的至少一种。
然而，相关技术中，发光颜色不同的发光器件中，一部分的发光效率较高，一部分的发光效率较低，从而导致显示面板的整体的发光效率下降。在本文中，发光效率指的是亮度与驱动电流的比值。
经发明人研究发现，发光颜色不同的发光器件的发光效率较高时，第二电极层的反射率并不相同。但是，相关技术中，第二电极层为连续的整层结构，且第二电极层的厚度相等，导致发光颜色不同的发光器件中，仅能使得一部分发光器件的发光效率较高，另一部分的发光器件的发光效率较低，从而导致显示面板的发光效率下降。
基于此，本公开的一些实施例提供的显示面板100中，参阅图7，第二电极层40包括多个第二电极41，且第二电极41、发光部31和第一电极21在衬底10上的正投影至少部分重合，且重合的部分形成发光器件210。
其中，如图7所示，多个发光器件210包括发光颜色不同的第一发光器件211和第二发光器件212，第一发光器件211与第二发光器件212的第二电极40的厚度不相等。在这种情况下，可以通过改变第一发光器件211和第二发光器件212的第二电极41的厚度，对第一发光器件211和第二发光器件212的第二电极41的反射率分别调整，以使得第一发光器件211和第二发光器件212的发光效率均可以达到较高的水平(例如大于或等于100％)，从而提高显示面板100的发光效率。
示例性地，参阅图7，第一发光器件211的发光颜色为红色或绿色，第二发光器件212的发光颜色为蓝色。
在此基础上，如图7所示，第一发光器件211的第二电极41的厚度，例如可以大于第 二发光器件212的第二电极41的厚度，使得第一发光器件211的第二电极41的反射率，大于第二发光器件212的第二电极41的的反射率。
图8为根据一些实施例的第一发光器件的发光效率与第二电极的反射率的关系的测试仿真结果图；图9为根据一些实施例的第二发光器件的发光效率与第二电极的反射率的关系的测试仿真结果图。由图8和图9可知，第一发光器件211的第二电极41的反射率，大于第二发光器件212的第二电极41的反射率时，可以提高第一发光器件211的发光效率。
例如，参阅图7，第一发光器件211的第二电极41的厚度为13nm～16nm。如，第一发光器件211的第二电极41的厚度为13nm、14nm、15nm和16nm中的任一者。第二发光器件212的第二电极41的厚度为10nm～12nm。如，第二发光器件212的第二电极41的厚度为10nm、11nm和12nm中的任一者。
在这种情况下，第一发光器件211和第三发光器件213的第二电极41的反射率为55％～60％，第二发光器件212的第二电极41的反射率为45％～50％。由图8和图9可知，第一发光器件211和第二发光器件212的发光效率高，可以进一步地提高显示面板100的发光效率。
在一些实施例中，如图7所示，多个发光器件210还包括第三发光器件213，第三发光器件213与第一发光器件211的发光颜色不同，且与第二发光器件212的发光颜色不同，以实现全彩显示。
且，第三发光器件213与第二发光器件212的第二电极40的厚度不相等。在这种情况下，可以通过改变第三发光器件213和第二发光器件212的第二电极41的厚度，对第三发光器件213和第二发光器件212的第二电极41的反射率分别调整，以使得第三发光器件213和第二发光器件212的发光效率均可以达到较高的水平(例如大于或等于100％)，从而进一步地提高显示面板100的发光效率。
示例性地，参阅图7，第一发光器件211和第三发光器件213中，一者的发光颜色为红色，另一者的发光颜色为绿色，第二发光器件212的发光颜色为蓝色。例如，第一发光器件211的发光颜色为红色，第三发光器件213的发光颜色为绿色，第二发光器件212的发光颜色为蓝色。
下面以第一发光器件211的发光颜色为红色，第三发光器件213的发光颜色为绿色，第二发光器件212的发光颜色为蓝色为例，对本公开的一些实施例进行示意性说明，但是本公开的实施方式不限于此，并且也可以考虑任何其它发光颜色，只要应用相同的技术思想即可。
在此基础上，参阅图7，第三发光器件213的第二电极41的厚度，例如还可以大于第二发光器件212的第二电极41的厚度，使得第三发光器件213的第二电极41的反射率， 大于第二发光器件212的第二电极41的的反射率。
图10为根据一些实施例的第三发光器件的发光效率与第二电极的反射率的关系的测试仿真结果图。由图9和图10可知，第三发光器件213的第二电极41的反射率，大于第二发光器件212的第二电极41的反射率时，可以提高第三发光器件213的发光效率。
例如，参阅图7，第三发光器件213的第二电极41的厚度为13nm～16nm。如，第三发光器件213的第二电极41的厚度为13nm、14nm、15nm和16nm中的任一者。第二发光器件212的第二电极41的厚度为10nm～12nm。如，第二发光器件212的第二电极41的厚度为10nm、11nm和12nm中的任一者。
在这种情况下，结合图9和图10，第三发光器件213的第二电极41的反射率为55％～60％，第二发光器件212的第二电极41的反射率为45％～50％，第三发光器件213和第二发光器件212的发光效率高，可以进一步地提高显示面板100的发光效率。
此外，如图7所示，上述第三发光器件213的第二电极41的厚度，例如可以等于第一发光器件211的第二电极41的厚度。以这种方式设置，第一发光器件211和第三发光器件213可以通过同一工艺步骤形成，这样可以减少一次光刻工艺，从而简化工艺流程，降低制备成本，提高生产效率。
在一些实施例中，参阅图7，多个第二电极41间隔设置，且第二电极41在衬底10上的正投影的面积，与发光器件210在衬底10上的正投影的面积的比值为1～1.2。例如，第二电极41在衬底10上的正投影的面积，与发光器件210在衬底10上的正投影的面积的比值为1、1.02、1.05、1.08、1.1、1.13、1.15、1.17、1.18和1.2中的任一者。
此时，发光器件210发出的大部分光或所有的光均经过对应的第二电极41，这样可以提高发光器件210的发光效率，从而提高显示面板100的发光效率；同时，第二电极41可以间隔设置，不同的发光器件210的第二电极41区分明显，利于采用光刻工艺形成，且便于维护。当然，多个第二电极41也可以临接，或一个第二电极41的部分搭接至另一个第二电极41的上侧，本公开实施例对此不做具体限定。
需要说明的是，第二电极41在衬底10上的正投影的形状，与发光器件210在衬底10上的正投影的形状可以相同，也可以不同。例如，第二电极41在衬底10上的正投影的形状与发光器件210在衬底10上的正投影的形状相同，且为圆形、椭圆形、矩形和多边形中的任一者。
在一些实施例中，参阅图7，显示面板100还包括光取出层50，光取出层50设置于第二电极层40远离衬底10的一侧，以改善发光器件210的发光效率，提高使用寿命。
需要说明的是，光取出层50的材料包括空穴型的材料和/或电子型的材料，例如，光取出层50的材料包括芳胺类和/或噁唑类。光取出层50的厚度可以为50nm～70nm。例如，光取出层50的厚度可以为50nm、52nm、55nm、58nm、60nm、63nm、65nm、68nm和70nm 中的任一者。
其中，光取出层50包括多个光取出部51，第一电极21在衬底10上的正投影，位于光取出部51在衬底10上的正投影的范围内。且，光取出部51在衬底10上的正投影的边界，与第一电极21在衬底10上的正投影的边界之间的距离L为2μm～8μm。
例如，光取出部51在衬底10上的正投影的边界，与第一电极21在衬底10上的正投影的边界之间的距离L为2μm、3μm、4μm、5μm、6μm、7μm和8μm。此时，发光器件210发出的大部分光或所有的光均均经过对应的光取出部51，这样可以提高发光器件210的发光效率，从而提高显示面板100的发光效率。
在一些实施例中，参阅图7，多个光取出部51包括第一光取出部511和第二光取出部512，第一发光器件211在衬底10上的正投影，位于第一光取出部511在衬底上的正投影的范围内。第二发光器件212在衬底10上的正投影，位于第二光取出部512在衬底10上的正投影的范围内。且，第一光取出部511的厚度与第二光取出部512的厚度不相等。
经发明人研究发现，发光颜色不同的发光器件210的发光效率较高时，光取出部51的厚度并不相同。基于此，第一光取出部511的厚度与第二光取出部512的厚度不相等，这样第一光取出部511的厚度与第二光取出部512可以分别适配对应的厚度，以提高第一发光器件211和第二发光器件212的发光效率，从而提高显示面板100的发光效率。
在一些实施例中，参阅图7，多个发光器件210还包括第三发光器件213，第三发光器件213与第一发光器件211的发光颜色不同，且与第二发光器件212的发光颜色不同，以实现全彩显示。
在此基础上，多个光取出部51还包括第三光取出部513，第三发光器件213在衬底10上的正投影，位于第三光取出部513在衬底10上的正投影的范围内。第三光取出部513的厚度与第一光取出部511的厚度不相等，且与第二光取出部512的厚度不相等。
在这种情况下，第一光取出部511、第二光取出部512和第三光取出部513均可以适配对应的厚度，以提高第一发光器件211和第二发光器件212的发光效率，从而提高显示面板100的发光效率。
示例性地，参阅图7，第一发光器件211的发光颜色为红色，第三发光器件213的发光颜色为绿色，第二发光器件212的发光颜色为蓝色。
在此基础上，第一光取出部511和/或第三光取出部513的厚度大于第二光取出部512的厚度。和/或，第三光取出部513的厚度小于第一光取出部511的厚度。
图11为根据一些实施例的发光颜色不同的多个发光器件的发光效率与光取出层的厚度的关系的测试仿真结果图。由图11可知，第一光取出部511和/或第三光取出部513的厚度大于第二光取出部512的厚度时，可以提高第一发光器件211和/或第三发光器件213的发光效率。此外，第三光取出部513的厚度小于第一光取出部511的厚度，有利于进一 步地提高第一发光器件211的发光效率。
例如，参阅图7和图18，第一光取出部511的厚度大于或等于70nm，且小于80nm。如，第一光取出部511的厚度为70nm、72nm、73.5nm、75nm、77nm、78nm和79.5nm中的任一者。例如，第二光取出部512的厚度大于或等于45nm，且小于60nm。如，第二光取出部512的厚度为45nm、48nm、50nm、53nm、55nm、57nm、58nm和59.5nm。又例如，第三光取出部的厚度大于或等于60nm，且小于70nm。如，第三光取出部的厚度为60nm、63nm、65nm、66nm、68nm和69.5nm中的任一者。在这种情况下，结合图11可知，第一发光器件211、第二发光器件212和第三发光器件213的发光效率高，可以进一步地提高显示面板100的发光效率。
在一些实施例中，参阅图7和图12，显示面板100还包括透明导电层60，透明导电层60与第二电极层40连接，以降低第二电极层40的电阻，减小电流在流经时会产生相应的电流降，从而提升显示面板100的亮度均一性。
需要说明的是，透明导电层60的透明率大于或等于98％。例如，透明导电层60的材料包括氧化铟锡、氧化铟锌、铟镓锌氧化物和氧化锡中的任一者。
在一些示例中，参阅图7，透明导电层60设置于光取出层50和第二电极层40之间，这样可以在对发光器件210的发光效率的影响较小的情况下，增大传输电流的导电层(第二电极层40和透明导电层60)的厚度，基于电阻公式可知，可以减小传输电流的导电层的电阻，从而减小电流在流经时会产生相应的电流降，从而提升显示面板100的亮度均一性。
电阻公式如下：
R＝ρ/d。
其中，R为电阻，ρ为电阻率，d为传输电流的导电层的厚度。
此时，上述透明导电层60的厚度可以为1nm～4nm。例如，透明导电层60的厚度可以为1nm、1.5nm、2nm、2.5nm、3nm、3.5nm和4nm中的任一者。
在一些示例中，参阅图12，透明导电层60设置于光取出层50远离第二电极层40的一侧，透明导电层60与第二电极层40形成并联关系，可以降低传输电流的导电层的电阻，从而减小电流在流经时会产生相应的电流降，从而提升显示面板100的亮度均一性。
此时，上述透明导电层60的厚度可以为10nm～100nm。例如，透明导电层60的厚度可以为10nm、20nm、30nm、40nm、50nm、60nm、70nm、80nm、90nm和100nm中的任一者。
在此基础上，参阅图12和图13，多个光取出部51可以间隔设置，且透明导电层60在多个光取出部51之间与第二电极41电接触。在这种情况下，可以在对光取出部51的厚度进行设计的过程中，同时使多个光取出部51间隔设置，以便于后续形成的透明导电层 60与第二电极41电接触，这样无需对透明导电层60与第二电极41的连接设计独立的工艺过程，可以简化工艺流程，降低制备成本。
此外，在透明导电层60设置于光取出层50远离第二电极层40的一侧的情况下，透明导电层60与光取出层50可以直接接触，或中间设置有其他膜层。
例如，如图12所示，透明导电层60设置于光取出层50远离第二电极层40的一侧，且透明导电层60与光取出层50直接接触，即透明导电层60与光取出层50之间没有设置其他膜层。此时，透明导电层60可以直接通过沉积工艺形成于光取出层50上，利用提高透明导电层60的厚度均一性。
又例如，如图13所示，透明导电层60设置于光取出层50远离第二电极层40的一侧，且透明导电层60与光取出层50之间设置有保护层70，以调节出光和保护光取出层50。该保护层70的材料可以包括高折射材料，以提高出光效率。如，保护层70的材料包括氟化锂。此时，氟化锂还具有紫外光的防护作用，可以降低后续工艺的紫外光的照射对发光器件210的影响。
在一些实施例中，如图14所示，显示面板100还包括封装层80，封装层80设置于第二电极层40远离衬底10的一侧，以降低水氧侵蚀导致显示面板100失效的风险。其中，封装层80可以为封装薄膜，也可以为封装基板。
在一些示例中，参阅图14，封装层80包括至少一层无机封装层81，无机封装层81的材料包括氧化硅、氮氧化硅和氧化铝中的至少一者。
其中，至少一层无机封装层81中最靠近衬底10的无机封装层81包括叠置的第一子封装层811和第二子封装层812，第二子封装层812设置于第一子封装层811远离衬底10的一侧，且第一子封装层811的折射率小于第二子封装层812的折射率，以起到光提取的作用，提高发光器件210的发光效率。
示例性地，参阅图14，封装层80包括依次叠置的第一无机封装层82、第一有机封装层83和第二无机封装层84，第二无机封装层84位于第一无机封装层82远离衬底10的一侧。此处，第一无机封装层82可以包括叠置的第一子封装层811和第二子封装层812。需要说明的是，第一有机封装层83的材料包括甲基丙烯酸甲酯。
第一子封装层811的折射率可以为1.4～1.5。例如，第一子封装层811的折射率为1.4、1.42、1.43、1.45、1.46、1.48和1.5中的任一者。第二子封装层812的折射率可以为1.6～1.7。如，第二子封装层812的折射率为1.6、1.62、1.63、1.65、1.66、1.68和1.7中的任一者。
第一子封装层811的材料包括氧化硅，第二子封装层812的材料包括氮氧化硅，以起到较好的水氧隔离效果。且，第一子封装层811的制备工艺可以采用利用氢气轰击靶材形成，等离子体能量较小，可以降低光取出层50上侧的透明导电层60产生裂纹或撕裂的风险。该靶材的材料可以包括硅。
经发明人研究发现，第一子封装层811和第二子封装层812的厚度的比值，对发光器件210的发光效率会产生影响。基于此，可以针对通过第一子封装层811和第二子封装层812的厚度，以提高发光器件210的发光效率。
图15为根据一些实施例的第一发光器件的发光效率，在不同的第一子封装层的厚度下，与第二子封装层的厚度的关系的测试仿真结果图；图16为根据一些实施例的第二发光器件的发光效率，在不同的第一子封装层的厚度下，与第二子封装层的厚度的关系的测试仿真结果图；图17为根据一些实施例的第三发光器件的发光效率，在不同的第一子封装层的厚度下，与第二子封装层的厚度的关系的测试仿真结果图。
由图15、图16和图17可知，第一子封装层811的厚度为40nm～80nm，第二子封装层812的厚度为800nm～1000nm，发光器件210的发光效率较高。
此外，发光颜色不同的发光器件210的发光效率较高时，第一子封装层811和第二子封装层812的厚度的比值并不相同。此时，可以针对发光颜色不同的发光器件210，设计第一子封装层811和第二子封装层812的厚度不同，以提高各个发光颜色的发光器件210的发光效率。
示例性地，如图18所示，第一子封装层811包括第一子部801、第二子部802和第三子部803，第二子封装层812包括第四子部804、第五子部805和第六子部806。
其中，第一发光器件211在衬底10上的正投影，位于第一子部801在衬底10上的正投影的范围内，以及位于第四子部804在衬底10上的正投影的范围内。第二发光器件212在衬底10上的正投影，位于第二子部802在衬底上的正投影的范围内，以及位于第五子部805在衬底10上的正投影的范围内。第三发光器件213在衬底10上的正投影，位于第三子部803在衬底10上的正投影的范围内，以及位于第六子部806在衬底10上的正投影的范围内。
在此基础上，第一子部801的厚度为40nm～80nm，第四子部804的厚度为840nm～960nm，第一发光器件211的发光效率高。第二子部802的厚度为40nm～80nm，第五子部805的厚度为800nm～1000nm，第二发光器件212的发光效率高。第三子部803的厚度为40nm～80nm，第六子部806的厚度为800nm～1000nm，第三发光器件213的发光效率高。
例如，第一子部801的厚度为40nm，第四子部804的厚度为880nm～960nm。例如，第一子部801的厚度为60nm，第四子部804的厚度为860nm～950nm。又例如，第一子部801的厚度为80nm，第四子部804的厚度为840nm～950nm。
例如，第二子部802的厚度为40nm、60nm或80nm中的任一者时，第五子部805的厚度为800nm～1000nm。
例如，第三子部803的厚度为40nm、60nm或80nm中的任一者时，第六子部806的厚度为800nm～1000nm。
应理解，第一子部801、第二子部802和第三子部803中，至少两者的厚度可以相等，和/或，第四子部804、第五子部805和第六子部806中，至少两者的厚度可以相等，以在发光效率较高的情况下，减少光刻工艺，简化工艺流程，降低制备成本，提高生产效率。
示例性地，第一子部801、第二子部802和第三子部803的厚度相等，例如，第一子部801、第二子部802和第三子部803的厚度均为80nm。此时，第四子部804、第五子部805和第六子部806可以分别为860nm～910nm、820nm～860nm、800nm～840nm。这里，第五子部805还可以与第四子部804或第六子部806的厚度相等，当然也可以不相等，本公开实施例对此不做具体限定。
示例性地，第四子部804、第五子部805和第六子部806的厚度相等，例如，第四子部804、第五子部805和第六子部806的厚度均为880nm。此时，第一子部801、第二子部802和第三子部803可以分别为60nm～80nm、40nm～80nm、40nm～60nm。这里，第一子部801、第二子部802和第三子部803中的至少两者的厚度还可以相等，当然第一子部801、第二子部802和第三子部803三者的厚度也可以均不相等，本公开实施例对此不做具体限定。
在一些实施例中，参阅图14，封装层80包括依次叠置的第一无机封装层82、第一有机封装层83和第二无机封装层84，第二无机封装层84位于第一无机封装层82远离衬底10的一侧。
且，第一无机封装层82可以包括一层无机封装层81，也可以包括多层叠置无机封装层81，例如包括上面提到的第一子封装层811和第二子封装层812。
其中，第一无机封装层82的折射率例如可以为1.45～1.5。例如，第一无机封装层82的折射率例如可以为1.45、1.47和1.5。且，第一无机封装层82的折射率越低，发光器件210的发光效率越高。
图19为根据一些实施例的第一发光器件的发光效率，在不同的第一无机封装层的折射率下，与第一无机封装层与光取出层的厚度比值的关系的测试仿真结果图；图20为根据一些实施例的第二发光器件的发光效率，在不同的第一无机封装层的折射率下，与第一无机封装层与光取出层的厚度比值的关系的测试仿真结果图；图21为根据一些实施例的第三发光器件的发光效率，在不同的第一无机封装层的折射率下，与第一无机封装层与光取出层的厚度比值的关系的测试仿真结果图。由图19、图20和图21可知，第一无机封装层82的折射率越低，发光器件210的发光效率越高。
此外，第一无机封装层82的厚度与光取出部51的厚度的比值会对发光器件210的发光效率、视角的亮度衰减以及色偏均存在影响。
基于此，第一无机封装层82的厚度与第一光取出部511的厚度比值为2～2.4，第一无机封装层82的厚度与第二光取出部512的厚度比值为1～2.4。此外，在发光器件210包括 第三发光器件213时，光取出部51包括第三光取出部513。第一无机封装层82的厚度与第三光取出部513的厚度比值为2～2.4。
由图19、图20和图21可知，第一无机封装层82的厚度与第一光取出部511的厚度比值为2～2.4，第一发光器件211的发光效率较高。第一无机封装层82的厚度与第二光取出部512的厚度比值为1～2.4时，第二发光器件212的发光效率较高。第一无机封装层82的厚度与第三光取出部513的厚度比值为2～2.4，第三发光器件213的发光效率较高。
图22为根据一些实施例的第一发光器件的照明强度，在不同的视角下的亮度衰减的仿真结果图；图23为根据一些实施例的第二发光器件的照明强度，在不同的视角下的亮度衰减的仿真结果图；图24为根据一些实施例的第三发光器件的照明强度，在不同的视角下的亮度衰减的仿真结果图；图25为根据一些实施例的多个发光器件混合的白光的照明强度，在不同的视角下的亮度衰减的仿真结果图。
由图22、图23、图24和图25可知，第一无机封装层82的厚度与第一光取出部511的厚度比值为2～2.4，第一发光器件211的在0°～60°的视角的亮度衰减速度下降。第一无机封装层82的厚度与第二光取出部512的厚度比值为1～2.4时，第二发光器件212的在0°～60°视角的亮度衰减速度下降。第一无机封装层82的厚度与第三光取出部513的厚度比值为2～2.4，第三发光器件213的在0°～60°的视角的亮度衰减速度下降。且，第一发光器件211、第二发光器件212和第三发光器件213发出的光混色为白光时，显示面板100在0°～60°的视角的亮度衰减速度下降，有利于提升不同视角下的显示效果。
图26为为根据一些实施例的第一发光器件在不同的视角下的色偏的仿真结果图；图27为根据一些实施例的第二发光器件在不同的视角下的色偏的仿真结果图；图28为根据一些实施例的第三发光器件在不同的视角下的色偏的仿真结果图；图29为根据一些实施例的多个发光器件混合的白光在不同的视角下的色偏的仿真结果图。
由图26、图27、图28和图29可知，第一无机封装层82的厚度与第一光取出部511的厚度比值为2～2.4，第一发光器件211的在0°～60°的视角的色偏(Just Noticeable Color Difference，简称JNCD)的数值减小。第一无机封装层82的厚度与第二光取出部512的厚度比值为1～2.4时，第二发光器件212的在0°～60°的视角的色偏的数值减小。第一无机封装层82的厚度与第三光取出部513的厚度比值为2～2.4，第三发光器件213的在0°～60°的视角的色偏的数值减小。且，第一发光器件211、第二发光器件212和第三发光器件213发出的光混色为白光时，显示面板100在0°～60°的视角的色偏的数值减小，有利于提升不同视角下的显示效果。
在一些实施例中，如图14所示，显示面板100还包括像素界定层91和光阻隔结构92。像素界定层91设置于第一电极层20远离衬底10的一侧，光阻隔结构92设置于像素界定层91远离衬底10的一侧，且环绕发光器件210的周侧，以隔开相邻的两个发光器件210， 降低相邻的发光器件210串色而导致色偏的风险。需要说明的是，像素界定层91设有多个开口，一个发光器件210位于一个开口内。
其中，参阅图14，光阻隔结构92设置于像素界定层91和封装层80之间。且，光阻隔结构92可以与像素界定层91远离衬底10的表面接触。即，光阻隔结构92可以贯穿透明导电层60、光取出层50和第二电极层40。或，光阻隔结构92与第二电极层40远离衬底10的表面接触，即，光阻隔结构92可以贯穿透明导电层60和光取出层50，并停止于第二电极层40，与第二电极层40远离衬底10的表面接触。
此外，参阅图14，光阻隔结构92可以包括第一阻隔层921和第二阻隔层922，第二阻隔层922设置于第一阻隔层921远离衬底10的一侧，且第一阻隔层921在衬底10上的正投影位于第二阻隔层922在衬底10上的正投影的范围内。以这种方式设置，第一阻隔层921可以与像素界定层91或第二电极层40远离衬底10的表面接触，第一阻隔层921在衬底10上的正投影的面积可设置的较小，便于第一阻隔层921的工艺制备；且，第二阻隔层922在衬底10上的正投影的面积可设置的较大，这样可以在有效的避免相邻的发光器件210串色的情况下，缩减光阻隔结构92的高度，利于减小显示面板100的厚度。
上述第一阻隔层921的材料可以包括导电材料，透明导电层60和第二电极层40还可以通过第一阻隔层921电连接，可以降低传输电流的导电层的电阻，从而减小电流在流经时会产生相应的电流降，从而提升显示面板100的亮度均一性。示例性地，第一阻隔层921的材料包括金属材料，例如，第一阻隔层921的材料包括银、镁、铜、铝、铂、钯、金、镍、钕、铱、铬、锂、钙、氟化锂、钼、钛、铟、锡、锌和镱及其氧化物中的至少一种。
上述第二阻隔层922的材料可以包括导电材料或绝缘材料。示例性地，第一阻隔层921的材料包括绝缘材料，制备工艺简单。例如，第一阻隔层921的材料包括氧化硅、氮化硅和氮氧化硅中的至少一种。
本公开的一些实施例还提供了一种显示面板100的制备方法，如图30所示，包括S100～S200。
S100：在衬底10上依次形成第一电极层20和发光功能层30。
上述步骤中，参阅图14和图18，第一电极层20包括多个第一电极21，发光功能层30包括多个发光部31。第一电极层20和发光功能层30的结构与材料可以参考上文，在此不做赘述。
其中，第一电极层20可以采用蒸镀工艺和/或光刻工艺形成，发光功能层30可以采用蒸镀工艺形成，本公开实施例对此不做具体限定。
S200：采用光刻工艺，在发光功能层30远离衬底10的一侧形成第二电极层40。
上述步骤中，参阅图14和图18，第二电极层40包括多个第二电极41。第二电极41、发光部31和第一电极21在衬底10上的正投影至少部分重合，且重合的部分形成发光器 件210。其中，多个发光器件210包括发光颜色不同的第一发光器件211和第二发光器件212，第一发光器件211与第二发光器件212的第二电极41的厚度不相等。
需要说明的是，光刻工艺包括依次进行的沉积工艺、涂胶曝光工艺、显影工艺和刻蚀工艺。
其中，多个发光器件210还可以包括第三发光器件213，第三发光器件213与第一发光器件211的发光颜色不同，且与第二发光器件212的发光颜色不同，以实现全彩显示。在这种情况下，第三发光器件213与第二发光器件212的第二电极40的厚度不相等。
下面以多个发光器件210包括第一发光器件211、第二发光器件212和第三发光器件213为例，对本公开的一些实施例进行示意性说明，但是本公开的实施方式不限于此，并且也可以考虑任何其它发光器件210，只要应用相同的技术思想即可。
在一些实施例中，如图31所示，S200包括S210～S230。
S210：采用光刻工艺，形成第一发光器件211的第二电极41。
上述步骤中，如图32所示，可以先采用沉积工艺形成整层的第一导电薄膜410＇；然后，涂覆第一光刻胶41＇，并进行曝光显影，使得第一光刻胶41＇覆盖第一发光器件211，且暴露其他发光器件210；最后，以第一光刻胶41＇为掩膜，刻蚀第一导电薄膜410＇未被第一光刻胶41＇覆盖的区域。其中，在刻蚀第一导电薄膜410＇未被第一光刻胶41＇覆盖的区域之后，还可以将第一光刻胶41＇剥离。
S220：采用光刻工艺，形成第二发光器件212的第二电极41。
上述步骤中，如图33所示，可以先采用沉积工艺形成整层的第二导电薄膜420＇；然后，涂覆第二光刻胶42＇，并进行曝光显影，使得第二光刻胶42＇覆盖第二发光器件212，且暴露其他发光器件210；最后，以第二光刻胶42＇为掩膜，刻蚀第二导电薄膜420＇未被第二光刻胶42＇覆盖的区域。其中，在刻蚀第二导电薄膜420＇未被第二光刻胶42＇覆盖的区域之后，还可以将第二光刻胶42＇剥离。
S230：采用光刻工艺，形成第三发光器件213的第二电极41。
上述步骤中，如图34所示，可以先采用沉积工艺形成整层的第三导电薄膜430＇；然后，涂覆第三光刻胶43＇，并进行曝光显影，使得第三光刻胶43＇覆盖第三发光器件213，且暴露其他发光器件210；最后，以第三光刻胶43＇为掩膜，刻蚀第三导电薄膜430＇未被第三光刻胶43＇覆盖的区域。其中，在刻蚀第三导电薄膜430＇未被第三光刻胶43＇覆盖的区域之后，还可以将第三光刻胶43＇剥离。
基于上述，第二电极层40可以采用光刻工艺制备，这样无需引入蒸镀工艺所需的高精度掩膜版，工艺不受高精度掩膜版的原材料以及高精度掩膜版的制备工艺的限制，制备成本低，且能够使得显示面板100达到更高的像素密度。
在一些实施例中，如图30所示，上述制备方法还包括S300。
S300：采用光刻工艺，在第二电极层40远离衬底10的一侧形成光取出层50。
上述步骤中，参阅图12和图18，光取出层50包括多个光取出部51，多个光取出部51包括第一光取出部511和第二光取出部512，第一发光器件211在衬底10上的正投影，位于第一光取出部511在衬底10上的正投影的范围内。第二发光器件212在衬底10上的正投影，位于第二光取出部512在衬底10上的正投影的范围内。且，第一光取出部511的厚度与第二光取出部512的厚度不相等。
其中，多个发光器件210还可以包括第三发光器件213，第三发光器件213与第一发光器件211的发光颜色不同，且与第二发光器件212的发光颜色不同，以实现全彩显示。在这种情况下，多个光取出部51还包括第三光取出部513，第三发光器件213在衬底10上的正投影，位于第三光取出部513在衬底10上的正投影的范围内。第三光取出部513的厚度与第一光取出部511的厚度不相等，且与第二光取出部512的厚度不相等。
此处，厚度不同的第一光取出部511、第二光取出部512和第三光取出部513的制备方法可以参考第二电极层40的制备工艺流程，本公开实施例在此不做具体限定。也就是说，光取出层50也可以采用光刻工艺制备，这样无需引入蒸镀工艺所需的高精度掩膜版，工艺不受高精度掩膜版的原材料以及高精度掩膜版的制备工艺的限制，制备成本低，且能够使得显示面板100达到更高的像素密度。
在一些示例中，参阅图14和图18，多个光取出部51可以间隔设置，以便于后续工艺形成的透明导电层60在多个光取出部51之间与第二电极41电接触。其中，光取出层50位于像素界定层91上侧的部分可以通过光刻工艺去除，使得多个光取出部51间隔设置，第二电极层40暴露。
在一些实施例中，如图35所示，上述制备方法还包括S400～S600。
S400：在光取出层50远离衬底10的一侧形成透明导电层60。
上述步骤中，参阅图14和图18，透明导电层60与第二电极层40连接，以降低第二电极层40的电阻，减小电流在流经时会产生相应的电流降，从而提升显示面板100的亮度均一性。
其中，透明导电层60可以采用薄膜沉积工艺或溅射工艺形成，并在间隔设置的多个光取出部51之间与第二电极层40电接触。
S500：利用氢气轰击靶材，形成第一子封装层811。
上述步骤中，参阅图14和图18，靶材的材料可以包括硅，第一子封装层811的材料可以包括氧化硅。在这种情况下，采用利用氢气轰击靶材形成，等离子体能量较小，可以降低光取出层50上侧的透明导电层60产生裂纹或撕裂的风险。该第一子封装层811的折射率可以参考上文，第一子封装层811的厚度可以参考上文，本公开实施例在此不做赘述。
此处，在第一子封装层811包括第一子部801、第二子部802和第三子部803，且第一 子部801、第二子部802和第三子部803中至少存在两者的厚度不相等时，第一子部801、第二子部802和第三子部803的制备方法可以参考第二电极层40的制备工艺流程，本公开实施例在此不做具体限定。也就是说，第一子封装层811也可以采用光刻工艺制备，这样无需引入蒸镀工艺所需的高精度掩膜版，工艺不受高精度掩膜版的原材料以及高精度掩膜版的制备工艺的限制，制备成本低，且能够使得显示面板100达到更高的像素密度。
S600：采用含氮气体轰击靶材，形成第二子封装层812。
上述步骤中，参阅图14和图18，第一子封装层811的折射率小于第二子封装层812的折射率，以起到光提取的作用，提高发光器件210的发光效率。其中，靶材的材料可以包括硅，第二子封装层812的材料包括氮氧化硅，含氮气体可以包括氨气(NH3)、氮气(N2)和笑气(N2O)中的至少一者。该第二子封装层812的折射率可以参考上文，且第二子封装层812的厚度可以参考上文，本公开实施例在此不做赘述。
此处，在第二子封装层812包括第四子部804、第五子部805和第六子部806，且第四子部804、第五子部805和第六子部806中至少存在两者的厚度不相等时，第四子部804、第五子部805和第六子部806的制备方法可以参考第二电极层40的制备工艺流程，本公开实施例在此不做具体限定。也就是说，第二子封装层812也可以采用光刻工艺制备，这样无需引入蒸镀工艺所需的高精度掩膜版，工艺不受高精度掩膜版的原材料以及高精度掩膜版的制备工艺的限制，制备成本低，且能够使得显示面板100达到更高的像素密度。
在一些实施例中，如图35所示，在S400和S500之间，上述制备方法还包括S700。
S700：形成光阻隔结构92。
上述步骤中，参阅图14，光阻隔结构92环绕发光器件210的周侧设置，以隔开相邻的两个发光器件210，降低相邻的发光器件210串色而导致色偏的风险。
其中，显示面板100还包括像素界定层91，像素界定层91设置于第一电极层20远离衬底10的一侧，像素界定层91设有多个开口，一个发光器件210位于一个开口内。在此基础上，光阻隔结构92设置于像素界定层91远离衬底10的一侧，可以与像素界定层91远离衬底10的表面接触。即，光阻隔结构92可以贯穿透明导电层60、光取出层50和第二电极层40。或，光阻隔结构92与第二电极层40远离衬底10的表面接触，即，光阻隔结构92可以贯穿透明导电层60和光取出层50，并停止于第二电极层40，与第二电极层40远离衬底10的表面接触。
在一些示例中，参阅图14，光阻隔结构92可以包括第一阻隔层921和第二阻隔层922，第二阻隔层922设置于第一阻隔层921远离衬底10的一侧，且第一阻隔层921在衬底10上的正投影位于第二阻隔层922在衬底10上的正投影的范围内。
以这种方式设置，第一阻隔层921可以与像素界定层91或第二电极层40远离衬底10的表面接触，第一阻隔层921在衬底10上的正投影的面积可设置的较小，便于第一阻隔 层921的工艺制备；且，第二阻隔层922在衬底10上的正投影的面积可设置的较大，这样可以在有效的避免相邻的发光器件210串色的情况下，缩减光阻隔结构92的高度，利于减小显示面板100的厚度。
需要说明的是，第一阻隔层921和第二阻隔层922的材料可以参考上文，本公开实施例在此不做赘述。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (24)

  1. 一种显示面板，包括：
    衬底；
    第一电极层，设置于所述衬底的一侧；且，所述第一电极层包括多个第一电极；
    发光功能层，设置于所述第一电极层远离所述衬底的一侧；且，所述发光功能层包括多个发光部；
    第二电极层，设置于所述发光功能层远离所述衬底的一侧；且，所述第二电极层包括多个第二电极；所述第二电极、所述发光部和所述第一电极在所述衬底上的正投影至少部分重合，且重合的部分形成发光器件；
    其中，多个所述发光器件包括发光颜色不同的第一发光器件和第二发光器件，所述第一发光器件与所述第二发光器件的第二电极的厚度不相等。
  2. 根据权利要求1所述的显示面板，其中，多个所述发光器件还包括第三发光器件，所述第三发光器件与所述第一发光器件的发光颜色不同，且与所述第二发光器件的发光颜色不同；所述第三发光器件与所述第二发光器件的第二电极的厚度不相等。
  3. 根据权利要求2所述的显示面板，其中，所述第一发光器件和所述第三发光器件中，一者的发光颜色为红色，另一者的发光颜色为绿色，所述第二发光器件的发光颜色为蓝色；
    所述第一发光器件和/或所述第三发光器件的第二电极的厚度，大于所述第二发光器件的第二电极的厚度。
  4. 根据权利要求3所述的显示面板，其中，所述第三发光器件的第二电极的厚度等于所述第一发光器件的第二电极的厚度。
  5. 根据权利要求2或3所述的显示面板，其中，所述第一发光器件和所述第三发光器件的第二电极的厚度为13nm～16nm，所述第二发光器件的第二电极的厚度为10nm～12nm。
  6. 根据权利要求1～5中任一项所述的显示面板，其中，所述第二电极在所述衬底上的正投影的面积，与所述发光器件在所述衬底上的正投影的面积的比值为1～1.2。
  7. 根据权利要求1～6中任一项所述的显示面板，还包括光取出层，所述光取出层设置于所述第二电极层远离所述衬底的一侧；所述光取出层包括多个光取出部，所述多个光取出部包括：
    第一光取出部，所述第一发光器件在所述衬底上的正投影，位于所述第一光取出部在所述衬底上的正投影的范围内；
    第二光取出部，所述第二发光器件在所述衬底上的正投影，位于所述第二光取出部在所述衬底上的正投影的范围内；且，所述第一光取出部的厚度与所述第二光取出部的厚度不相等。
  8. 根据权利要求7所述的显示面板，其中，多个所述发光器件还包括第三发光器件，所述多个光取出部还包括：
    第三光取出部，所述第三发光器件在所述衬底上的正投影，位于所述第三光取出部在所述衬底上的正投影的范围内；且，所述第三光取出部的厚度与所述第一光取出部的厚度不相等，且与所述第二光取出部的厚度不相等。
  9. 根据权利要求8所述的显示面板，其中，所述第一发光器件的发光颜色为红色，所述第二发光器件的发光颜色为蓝色，所述第三发光器件的发光颜色为绿色；
    所述第一光取出部和/或所述第三光取出部的厚度大于所述第二光取出部的厚度；和/或，所述第三光取出部的厚度小于所述第一光取出部的厚度。
  10. 根据权利要求9所述的显示面板，其中，所述第一光取出部的厚度大于或等于70nm，且小于80nm；所述第二光取出部的厚度大于或等于45nm，且小于60nm；所述第三光取出部的厚度大于或等于60nm，且小于70nm。
  11. 根据权利要求7～10中任一项所述的显示面板，其中，所述第一电极在所述衬底上的正投影，位于所述光取出部在所述衬底上的正投影的范围内；且，所述光取出部在所述衬底上的正投影的边界，与所述第一电极在所述衬底上的正投影的边界之间的距离为2μm～8μm。
  12. 根据权利要求7～11中任一项所述的显示面板，还包括：
    封装层，设置于所述发光器件远离所述衬底的一侧；所述封装层包括依次叠置的第一无机封装层、第一有机封装层和第二无机封装层，所述第二无机封装层位于所述第一无机封装层远离所述衬底的一侧；
    其中，所述第一无机封装层的厚度与所述第一光取出部的厚度比值为2～2.4，所述第一无机封装层的厚度与所述第二光取出部的厚度比值为1～2.4。
  13. 根据权利要求12所述的显示面板，其中，多个所述发光器件还包括第三发光器件，所述多个光取出部还包括第三光取出部，所述第三发光器件在所述衬底上的正投影，位于所述第三光取出部在所述衬底上的正投影的范围内；所述第一无机封装层的厚度与所述第三光取出部的厚度比值为2～2.4。
  14. 根据权利要求1～13中任一项所述的显示面板，还包括：
    透明导电层，设置于所述光取出层和所述第二电极层之间，或所述光取出层远离所述第二电极层的一侧；且，所述透明导电层与所述第二电极层连接。
  15. 根据权利要求14所述的显示面板，其中，所述透明导电层设置于所述光取出层远离所述第二电极层的一侧；所述多个光取出部间隔设置，且所述透明导电层在所述多个光取出部之间与所述第二电极电接触。
  16. 根据权利要求14或15所述的显示面板，其中，所述透明导电层设置于所述光取 出层远离所述第二电极层的一侧，且所述透明导电层与所述光取出层直接接触。
  17. 根据权利要求1～16中任一项所述的显示面板，还包括：
    封装层，设置于所述第二电极层远离所述衬底的一侧；所述封装层包括至少一层无机封装层，所述至少一层无机封装层中最靠近所述衬底的无机封装层包括叠置的第一子封装层和第二子封装层，所述第二子封装层设置于所述第一子封装层远离所述衬底的一侧，且所述第一子封装层的折射率小于所述第二子封装层的折射率。
  18. 根据权利要求17所述的显示面板，其中，所述第一子封装层的厚度为40nm～80nm，所述第二子封装层的厚度为800nm～1000nm。
  19. 根据权利要求17或18所述的显示面板，其中，所述第一子封装层的材料包括氧化硅，所述第二子封装层的材料包括氮氧化硅。
  20. 根据权利要求1～19中任一项所述的显示面板，还包括：
    像素界定层，设置于所述第一电极层远离所述衬底的一侧；
    光阻隔结构，设置于所述像素界定层远离所述衬底的一侧，且环绕所述发光器件的周侧。
  21. 一种显示装置，包括：
    如权利要求1～20中任一项所述的显示面板；
    电路板，与所述显示面板连接。
  22. 一种显示面板的制备方法，包括：
    在衬底的一侧依次形成第一电极层和发光功能层；所述第一电极层包括多个第一电极，所述发光功能层包括多个发光部；
    采用光刻工艺，在所述发光功能层远离所述衬底的一侧形成第二电极层；所述第二电极层包括多个第二电极；所述第二电极、所述发光部和所述第一电极在所述衬底上的正投影至少部分重合，且重合的部分形成发光器件；其中，多个所述发光器件包括发光颜色不同的第一发光器件和第二发光器件，所述第一发光器件与所述第二发光器件的第二电极的厚度不相等。
  23. 根据权利要求22所述的制备方法，还包括：
    采用光刻工艺，在所述第二电极层远离所述衬底的一侧形成光取出层；所述光取出层包括多个光取出部，所述多个光取出部包括第一光取出部和第二光取出部，所述第一发光器件在所述衬底上的正投影，位于所述第一光取出部在所述衬底上的正投影的范围内；所述第二发光器件在所述衬底上的正投影，位于所述第二光取出部在所述衬底上的正投影的范围内；且，所述第一光取出部的厚度与所述第二光取出部的厚度不相等。
  24. 根据权利要求23所述的制备方法，还包括：
    在所述光取出层远离所述衬底的一侧形成透明导电层；所述透明导电层与所述第二电 极层连接；
    利用氢气轰击靶材，形成第一子封装层；
    采用含氮气体轰击靶材，形成第二子封装层；所述第一子封装层的折射率小于所述第二子封装层的折射率。
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