WO2025218600A1 - 氢掺杂的氧化铟锡薄膜、其制备方法和包含其的太阳能电池 - Google Patents

氢掺杂的氧化铟锡薄膜、其制备方法和包含其的太阳能电池

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Publication number
WO2025218600A1
WO2025218600A1 PCT/CN2025/088607 CN2025088607W WO2025218600A1 WO 2025218600 A1 WO2025218600 A1 WO 2025218600A1 CN 2025088607 W CN2025088607 W CN 2025088607W WO 2025218600 A1 WO2025218600 A1 WO 2025218600A1
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Prior art keywords
tin oxide
indium tin
ray diffraction
diffraction peak
hydrogen
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PCT/CN2025/088607
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English (en)
French (fr)
Inventor
陈哲
袁陨来
杜海录
王建波
徐希翔
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Longi Green Energy Technology Co Ltd
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Longi Green Energy Technology Co Ltd
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Publication of WO2025218600A1 publication Critical patent/WO2025218600A1/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Definitions

  • the present application relates to the technical field of solar cells, and in particular to a hydrogen-doped indium tin oxide thin film, a preparation method thereof, and a solar cell comprising the same.
  • heterojunction cells In the field of solar cell manufacturing, crystalline silicon heterojunction solar cells (HJT cells, commonly referred to as heterojunction cells) have attracted widespread attention. These cells are characterized by the addition of an intrinsic amorphous silicon layer between the emitter and the highly doped back layer and the silicon substrate. HJT cells combine the advantages of single-crystalline silicon and amorphous silicon, require lower manufacturing temperatures, and exhibit excellent passivation. Currently, the cumulative production capacity of heterojunction cells continues to grow, making them a key development direction in the field of high-efficiency crystalline silicon cells.
  • the TCO thin film transport layer serves as a lateral transport channel for charge carriers.
  • This transport layer is typically formed by sputtering ITO (indium tin oxide, a common TCO thin film material) targets onto the front and back sides of the cell using magnetron sputtering.
  • ITO indium tin oxide, a common TCO thin film material
  • ITO thin films which serve as carrier transport channels
  • the conductivity of ITO thin films still leaves room for improvement.
  • the direct introduction of vaporized water vapor into the cavity can lead to target nodules, reducing target utilization.
  • the process parameters fluctuate significantly, increasing production complexity and instability.
  • the substrate fixture requires frequent cleaning, extending maintenance costs and production cycles.
  • the main purpose of the present application is to provide a hydrogen-doped indium tin oxide thin film, a preparation method thereof and a solar cell comprising the same, in order to at least partially solve at least one of the above technical problems.
  • a hydrogen-doped indium tin oxide film having a first X-ray diffraction peak with a (400) crystal plane orientation and a second X-ray diffraction peak with a (222) crystal plane orientation, wherein the intensity of the first X-ray diffraction peak is greater than the intensity of the second X-ray diffraction peak.
  • the grain size of the grains having a (400) crystal plane orientation or a (222) crystal plane orientation is 58 to 65 nm.
  • the lattice spacing of the (400) crystal plane is 0.25 to 0.26 nm
  • the lattice spacing of the (222) crystal plane is 0.29 to 0.30 nm.
  • the indium tin oxide film also has a third X-ray diffraction peak with a (440) crystal plane orientation and a fourth X-ray diffraction peak with a (622) crystal plane orientation; wherein the intensities of the third X-ray diffraction peak and the fourth X-ray diffraction peak are respectively less than the intensity of the first X-ray diffraction peak.
  • a method for preparing an indium tin oxide thin film comprising: depositing a hydrogen-doped indium tin oxide thin film on a substrate using a magnetron sputtering method, wherein the deposition conditions of the magnetron sputtering method include: a working gas comprising, by volume, 94.8% to 97.4% argon, 0.6% to 2.3% hydrogen, and 2% to 2.9% oxygen.
  • the deposition conditions further include: the sputtering power of the magnetron sputtering method is 7 to 14 kW, and the target material used is an indium tin oxide target material.
  • a solar cell comprising: a substrate; a hydrogen-doped indium tin oxide thin film formed on the substrate; and a metal electrode formed on the indium tin oxide thin film; wherein the hydrogen-doped indium tin oxide thin film has a first X-ray diffraction peak with a (400) crystal plane orientation and a second X-ray diffraction peak with a (222) crystal plane orientation, and the intensity of the first X-ray diffraction peak is greater than the intensity of the second X-ray diffraction peak.
  • the grain size of the grains having a (400) crystal plane orientation or a (222) crystal plane orientation is 58 to 65 nm.
  • the lattice spacing of the (400) crystal plane is 0.25 to 0.26 nm
  • the lattice spacing of the (222) crystal plane is 0.29 to 0.30 nm.
  • the indium tin oxide film also has a third X-ray diffraction peak with a (440) crystal plane orientation and a fourth X-ray diffraction peak with a (622) crystal plane orientation; the intensities of the third X-ray diffraction peak and the fourth X-ray diffraction peak are respectively less than the intensity of the first X-ray diffraction peak.
  • the substrate includes a first doped nanocrystalline silicon layer, a first intrinsic amorphous silicon layer, a crystalline silicon substrate, a second intrinsic amorphous silicon layer, and a second doped nanocrystalline silicon layer stacked in sequence; wherein the hydrogen-doped indium tin oxide film includes a first indium tin oxide film and a second indium tin oxide film, the first indium tin oxide film is formed on the first doped nanocrystalline silicon layer, and the second indium tin oxide film is formed on the second doped nanocrystalline silicon layer; the metal electrode includes a first metal electrode and a second metal electrode, the first metal electrode is formed on the first indium tin oxide film, and the second metal electrode is formed on the second indium tin oxide film.
  • the thickness of the first indium tin oxide film is 65 to 110 nm; the thickness of the second indium tin oxide film is 65 to 110 nm.
  • a hydrogen-doped indium tin oxide (In2O3 :H) film prepared using an optimized hydrogen process ( H2 process ) is provided, exhibiting a specific crystal plane orientation distinct from that produced using the H2O process. Based on the unique (400) crystal plane orientation of the first grains , the In2O3 :H film exhibits distinct physical and electrical properties, including fewer defects and excellent conductivity. Application of the In2O3 :H film to solar cells can help improve the cell's electrical performance, including conversion efficiency.
  • the H2 process employed herein suppresses target material nodules, a common phenomenon in H2O processes, thereby improving target material utilization. Furthermore, since impurities are less likely to be generated or introduced, the process is more stable, reducing the frequency of cleaning the carrier tooling of the magnetron sputtering equipment, extending the cleaning cycle by at least double and increasing the equipment's continuous production time by at least 30 minutes per day.
  • FIG1 is an X-ray diffraction diagram of a hydrogen-doped indium tin oxide thin film on a textured cell and a monitoring cell in an embodiment of the present application;
  • FIG2 is an X-ray diffraction pattern of hydrogen-doped and water vapor-doped indium tin oxide thin films on a monitoring wafer in an embodiment of the present application;
  • FIG3 is a transmission electron microscope image of a hydrogen-doped indium tin oxide thin film on a textured solar cell in an embodiment of the present application
  • FIG4 is a high-resolution transmission electron micrograph of a hydrogen-doped indium tin oxide thin film on a textured solar cell in an embodiment of the present application
  • FIG5 is a transmission electron microscope image of an indium tin oxide thin film prepared by a H 2 O process on a monitoring wafer in an embodiment of the present application;
  • FIG6 is a high-resolution transmission electron micrograph of an indium tin oxide thin film prepared by a H 2 O process on a monitoring wafer in an embodiment of the present application;
  • FIG7 is a schematic diagram of target nodule formation in the H 2 O process according to an embodiment of the present application.
  • FIG8 is a schematic structural diagram of a heterojunction solar cell according to an embodiment of the present application.
  • FIG9 shows the photovoltaic characteristics of a heterojunction solar cell according to an embodiment of the present application.
  • FIG10 is a graph showing the external quantum efficiency and reflectivity of a heterojunction solar cell according to an embodiment of the present application.
  • FIG11 shows the contact resistance between the indium tin oxide film and the metal electrode on the front side of the heterojunction solar cell in an embodiment of the present application.
  • a method for preparing an indium tin oxide thin film comprising: depositing a hydrogen-doped indium tin oxide thin film on a substrate using a magnetron sputtering method, wherein the substrate comprises a polished wafer or a textured silicon wafer.
  • the preparation method of the indium tin oxide film is a hydrogen-doped indium tin oxide film using an H2 process, comprising: depositing the hydrogen-doped indium tin oxide film on a substrate by physical vapor deposition (PVD) technology, preferably by magnetron sputtering, using a magnetron sputtering device to deposit the hydrogen-doped indium tin oxide film.
  • PVD physical vapor deposition
  • the deposition conditions of the magnetron sputtering method include: the working gas includes 94.8% to 97.4% argon, 0.6% to 2.3% hydrogen and 2% to 2.9% oxygen by volume.
  • the working gas includes 94.8% to 97.4% argon, 0.6% to 2.3% hydrogen and 2% to 2.9% oxygen by volume.
  • Different gas combinations can affect the growth mode and orientation of grains during the thin film deposition process.
  • the volume content of hydrogen in the working gas affects the chemical reducibility of the indium tin oxide film, which helps to improve the conductivity and transparency of the indium tin oxide film.
  • the deposition process of the film can be optimized, the growth mode and orientation of the grains can be controlled, and a film with specific properties can be obtained.
  • the water vapor partial pressure in the deposition chamber can be 3 ⁇ 10 -3 ⁇ 9 ⁇ 10 -3 Pa, for example, it can be 3.2 ⁇ 10 -3 Pa, 4.5 ⁇ 10 -3 Pa, 5 ⁇ 10 -3 Pa, 6.8 ⁇ 10 -3 Pa, 8 ⁇ 10 -3 Pa, etc.
  • the presence of water vapor will affect the adsorption and reaction kinetics on the surface of the film, thereby affecting the growth process of the film and the final film properties.
  • An appropriate amount of water vapor can help regulate the structure and stress state of the film, and adjust the growth rate and grain orientation of the film.
  • the factors affecting the formation of water vapor partial pressure mainly include: water vapor brought by the carrier during circulation, the reaction of hydrogen ( H2 ) and oxygen ( O2 ) in the process chamber to generate water ( H2O ), etc.
  • different hydrogen contents in the working gas will bring about changes in water vapor partial pressure.
  • the total water partial pressure in the cavity will show regular changes.
  • the higher the hydrogen content the higher the water vapor partial pressure will be.
  • hydrogen is provided in the magnetron sputtering process as a mixture of argon and hydrogen, where the hydrogen concentration can be, for example, 2.8 wt %, for safe transportation. Furthermore, the water vapor partial pressure within the magnetron sputtering process chamber is monitored by a residual gas analyzer (RGA).
  • RAA residual gas analyzer
  • the process gas when hydrogen-doped ITO thin film is prepared using H2 process, the process gas may be Ar, O2 , or mixed gas (Ar+ H2 ); and when H2O process is used to prepare ITO thin film, the process gas may be Ar, O2 , or H2O .
  • the deposition conditions also include: the sputtering power of the magnetron sputtering method is 7 to 14 kW, for example, it can be 8 kW, 9 kW, 10 kW, 12 kW, 13 kW, etc., but it is not limited to the listed values, and other unlisted values within this numerical range are also applicable.
  • the sputtering power affects the deposition rate and film properties of the indium tin oxide film, and thus affects the growth rate and orientation of the grains. A higher sputtering power can increase the sputtering rate, but may cause an increase in defects in the film, affecting the quality of the film.
  • the target material used is an indium tin oxide target material.
  • the target material can be, for example, a 991 target material (or VTTO target material), that is, the target material contains 99% indium oxide and the remaining 1% other multi-element substances.
  • the 991 target material is selected based on the work function matching between the target material and the microcrystalline silicon substrate, which can provide a good sputtering effect and help to obtain a high-quality indium tin oxide film.
  • the H2 process employed in the aforementioned preparation method is a relatively clean process that is less likely to generate or introduce impurities. This allows the cleaning cycle of the magnetron sputtering equipment's carrier plate to be extended by more than double, reducing equipment downtime and improving production efficiency. Furthermore, because the target material is less likely to form nodules, the target material utilization rate can be increased from 70% to over 80%, increasing the equipment's continuous production time by over 30 minutes per day.
  • a hydrogen-doped indium tin oxide thin film is provided, which can reduce production costs (including initial investment costs and daily operating costs) during mass production and effectively improve the photoelectric conversion efficiency of the battery cell (that is, improve the battery's ability to convert light energy into electrical energy).
  • a hydrogen-doped indium tin oxide film prepared by an H2 process wherein a hydrogen-doped indium tin oxide film is prepared on a polished monitoring wafer and a hydrogen-doped indium tin oxide film is prepared on a suede battery wafer, respectively.
  • These two indium tin oxide films have common and unique grain orientations.
  • FIG1 is an X-ray diffraction diagram of a hydrogen-doped indium tin oxide thin film on a textured cell and a monitoring cell prepared by an H 2 process in an embodiment of the present application.
  • this is the X-ray diffraction pattern of the hydrogen-doped indium tin oxide film prepared by the H2 process in the embodiment of the present application.
  • the X-ray diffraction peak of the (211) crystal plane orientation unique to the hydrogen-doped indium tin oxide film was observed at 2 ⁇ of 21.5°.
  • the X-ray diffraction peak of the (222) crystal plane orientation typical of the indium tin oxide film appeared at 2 ⁇ of 30.6°
  • the X-ray diffraction peak of the (400) crystal plane orientation unique to the hydrogen-doped indium tin oxide film was observed at 2 ⁇ of 35.5°.
  • the X-ray diffraction peak of the (440) crystal plane orientation unique to the hydrogen-doped indium tin oxide film was observed at 2 ⁇ of 51.0°, and the X-ray diffraction peak of the (622) crystal plane orientation unique to the hydrogen-doped indium tin oxide film was observed at 2 ⁇ of 61.8°.
  • the peak situation shows a polycrystalline structure with a relatively good crystalline state.
  • the hydrogen-doped indium tin oxide film prepared on the textured solar cell of the present application has a first X-ray diffraction peak intensity of the (400) crystal plane measured by X-ray diffraction method that is greater than the second X-ray diffraction peak intensity of the (222) crystal plane. This indicates that the crystallinity of the grains oriented on the (400) crystal plane of the hydrogen-doped indium tin oxide film of the present application is stronger than that of the grains oriented on the (222) crystal plane.
  • the indium tin oxide film also has a third X-ray diffraction peak with a (440) crystal plane orientation and a fourth X-ray diffraction peak with a (622) crystal plane orientation; wherein the intensities of the third X-ray diffraction peak and the fourth X-ray diffraction peak are respectively less than the intensity of the first X-ray diffraction peak.
  • the present application also uses an indium tin oxide thin film prepared by H 2 O process as a comparative embodiment, and performs XRD diffraction test and comparison with the indium tin oxide thin film on the hydrogen-doped monitoring plate prepared by H 2 process.
  • FIG2 is an X-ray diffraction diagram of an indium tin oxide thin film prepared by a hydrogen doping process and a water vapor process on a monitoring wafer in an embodiment of the present application.
  • the X-ray diffraction peaks at 21.5° and 30.6° of the indium tin oxide film prepared by the H2O process and the hydrogen-doped indium tin oxide film prepared by the H2O process correspond to the orientations of the (211) and (222) crystal planes.
  • the indium tin oxide film prepared by the H2O process also has X-ray diffraction peaks of (332) and (444) crystal plane orientations at 41.8° and 63.7°.
  • the film prepared by the H2O process does not have X-ray diffraction peaks of (440) and (622) crystal plane orientations.
  • the grain size is calculated by substituting the full width at half maximum (FWHM) of the X-ray diffraction peak corresponding to the 2 ⁇ angle into the Scherrer formula.
  • the grain size of the grains oriented in the (400) crystal plane is 59 to 65 nm, for example, 59.5 nm, 60.2 nm, 61.5 nm, 62.3 nm, 64.8 nm, etc.; the grain size of the grains oriented in the (222) crystal plane is 58 to 64 nm, for example, 58.2 nm, 59.3 nm, 60.5 nm, 62.7 nm, 63.5 nm, etc.
  • the values are not limited to the listed values, and other values not listed within the numerical range are also applicable.
  • FIG3 is a transmission electron microscope image of a hydrogen-doped indium tin oxide thin film prepared by the H2 process on a textured solar cell in an embodiment of the present application
  • FIG4 is a high-resolution transmission electron microscope image of a hydrogen-doped indium tin oxide thin film on a textured solar cell in an embodiment of the present application.
  • Figure 3 shows a transmission electron microscopy cross-section of the hydrogen-doped indium tin oxide thin film on the textured solar cell produced using the H2 process, showing a uniform, columnar-free structure with a film thickness of 73 nm.
  • the lattice spacings were measured to be 0.253 nm and 0.297 nm, respectively.
  • the lattice spacing of the (400) crystal plane is 0.25 to 0.26 nm, for example, it can be 0.251 nm, 0.252 nm, 0.253 nm, 0.254 nm, 0.255 nm, 0.256 nm, 0.257 nm, 0.258 nm, 0.259 nm or 0.260 nm, and the lattice spacing of the (222) crystal plane is 0.29 to 0.30 nm, for example, it can be 0.291 nm, 0.292 nm, 0.293 nm, 0.294 nm, 0.295 nm, 0.296 nm, 0.297 nm, 0.298 nm, 0.299 nm or 0.290 nm.
  • FIG5 is a transmission electron microscope image of an indium tin oxide thin film prepared by H2O process on a monitoring wafer in an embodiment of the present application
  • FIG6 is a high-resolution transmission electron microscope image of an indium tin oxide thin film prepared by H2O process on a monitoring wafer in an embodiment of the present application.
  • the indium tin oxide film prepared by the H 2 O process is similar to that prepared by the H 2 process, and also has a uniform columnar-free crystal structure. Its film thickness is 94.5 nm.
  • the lattice spacing measured in the area shown in Figure 5 is 0.213 nm and 0.295 nm, respectively.
  • the illustrated area corresponds to the (332) and (222) crystal planes of the indium oxide (In 2 O 3 ) phase, which is also consistent with the phase analysis results in Figure 1.
  • the hydrogen-doped indium tin oxide film on the suede solar cell prepared according to the H2 process of the present application has a thickness of 65 to 110 nm, for example, it can be 65 nm, 68 nm, 71 nm, 73 nm, 75 nm, 78 nm, 80 nm, 83 nm, 85 nm, 88 nm, 91 nm, 94 nm, 96 nm, 100 nm, 102 nm, 105 nm, 108 nm, 110 nm, etc.; the sheet resistance is 35 to 50 ⁇ /sq, for example, it can be 36 ⁇ /sq, 40 ⁇ /sq, 43 ⁇ /sq, 47 ⁇ /sq, 49 ⁇ /sq, etc.
  • the thickness of the indium tin oxide film prepared by the H2 process on the polished monitoring wafer is 100-120 nm, for example, 101 nm, 106 nm, 110 nm, 112 nm, 115 nm, 118 nm, 120 nm, etc.;
  • the sheet resistance is 25-50 ⁇ /sq, for example, 26 ⁇ /sq, 30 ⁇ /sq, 32 ⁇ /sq, 35 ⁇ /sq, 40 ⁇ /sq, 45 ⁇ /sq, 50 ⁇ /sq, etc.
  • the Hall mobility is 65-85 cm2 /vs, for example, 67 cm2 /vs, 69 cm2 /vs, 70 cm2 /vs, 75 cm2 /vs, 81 cm2 /vs, 85 cm2 /vs, etc.
  • the carrier concentration is 1.85 ⁇ 1020 to 2.2 ⁇ 1020 cells/ cm3.
  • the resistivity may be 3 ⁇ 10 -4 to 5 ⁇ 10 -4 ⁇ cm, for example, it may be 3.2 ⁇ 10 -4 ⁇ cm, 3.5 ⁇ 10 -4 ⁇ cm, 3.8 ⁇ 10 -4 ⁇ cm, 4.2 ⁇ 10 -4 ⁇ cm, 4.8 ⁇ 10 -4 ⁇ cm, etc.
  • the indium tin oxide film can be used in different thicknesses on the front or back of a photovoltaic cell, and has both excellent light transmittance and electrical conductivity.
  • the thickness of the ITO film can be measured, for example, using an ellipsometer.
  • the sheet resistance can be measured, for example, using a four-probe method.
  • the Hall mobility, carrier concentration, and resistivity can be measured using a Hall effect instrument.
  • the Hall parameters of the ITO film can be measured on transparent glass, i.e., the ITO film is prepared using a monitor sheet with transparent glass as the substrate.
  • Table 1 shows the performance of indium tin oxide thin films prepared by H 2 process on monitoring wafers with different hydrogen contents
  • Table 2 shows the performance of indium tin oxide thin films prepared by H 2 O process on monitoring wafers with different water vapor partial pressures.
  • Table 1 shows that when the hydrogen content in the H2 process is 0.9%, the carrier concentration of the resulting ITO film is low, indicating fewer defects in the film, relatively high current flow, high mobility, and low sheet resistance. This demonstrates that the resulting ITO film exhibits excellent conductivity, leading to high conversion efficiency in batteries.
  • the water vapor partial pressure is controlled by the amount of water vapor introduced into the water vapor generator. Other parameters remain consistent with the H2 process. For example, the H2 content corresponding to different water vapor partial pressures is set to 0.9%.
  • Table 2 shows that when the water vapor partial pressure in the H2O process is 5 ⁇ 10 ⁇ 3 Pa, the resulting ITO film exhibits superior overall performance.
  • the monitoring fluctuation during the process of preparing indium oxide doped hydrogen film ( In2O3 :H film ) by H2O process is large. Directly passing water vapor aerated in the chamber to the water vapor generator will lead to instability in the preparation process, causing excessive humidity on the target surface to cause target nodulation, affecting the quality and consistency of the film.
  • Figure 7 is a schematic diagram of target nodules in the H2O process according to an embodiment of the present application. As shown in Figure 7, during the sputtering process, lumps or nodules will form on the target surface, affecting the sputtering uniformity and film quality. The H2O process has poor efficiency and stability, which is not conducive to mass production.
  • a solar cell comprising: a substrate; a hydrogen-doped indium tin oxide thin film formed on the substrate; and a metal electrode formed on the indium tin oxide thin film; wherein the hydrogen-doped indium tin oxide thin film has a first X-ray diffraction peak with a (400) crystal plane orientation and a second X-ray diffraction peak with a (222) crystal plane orientation, and the intensity of the first X-ray diffraction peak is greater than the intensity of the second X-ray diffraction peak.
  • the hydrogen-doped indium tin oxide film can replace the existing ITO film and can be used to prepare solar cells including heterojunction cell structures, which may include: heterojunction cells (HJT), back contact cells (BC), HBC cells with HJT combined with BC technology (HJT-BC), and TBC cells with TOPCon combined with BC technology (Topcan-BC).
  • heterojunction cells HJT
  • BC back contact cells
  • HJT-BC HBC cells with HJT combined with BC technology
  • TBC cells with TOPCon combined with BC technology Topcan-BC.
  • the parameters and properties of the indium tin oxide thin film used in the solar cell are consistent with the indium tin oxide thin film described above, they are not described here in detail.
  • the substrate may include a first doped nanocrystalline silicon layer, a first intrinsic amorphous silicon layer, a crystalline silicon substrate, a second intrinsic amorphous silicon layer, and a second doped nanocrystalline silicon layer stacked in sequence; wherein the hydrogen-doped indium tin oxide film includes a first indium tin oxide film and a second indium tin oxide film, the first indium tin oxide film is formed on the first doped nanocrystalline silicon layer, and the second indium tin oxide film is formed on the second doped nanocrystalline silicon layer; the metal electrode includes a first metal electrode and a second metal electrode, the first metal electrode is formed on the first indium tin oxide film, and the second metal electrode is formed on the second indium tin oxide film.
  • FIG 8 is a schematic structural diagram of a heterojunction solar cell in one embodiment of the present application.
  • the heterojunction solar cell includes an n-type silicon substrate (n-Si), the upper surface (light-receiving side surface) of the n-type silicon substrate (n-Si) is a first intrinsic amorphous silicon layer ((i)a-Si:H), and a serrated n-doped first doped nanocrystalline silicon layer ((n)nc-Si:H) is deposited on the upper surface of the first intrinsic amorphous silicon layer ((i)a-Si:H).
  • a relatively thin first indium tin oxide film (ITO) is deposited on the upper surface of the first doped nanocrystalline silicon layer ((n)nc-Si:H).
  • the lower surface (backlight side surface) of the n-type silicon substrate (n-Si) is a second intrinsic amorphous silicon layer ((i)a-Si:H); a serrated p-doped second doped nanocrystalline silicon layer ((p)nc-Si:H) is deposited on the lower surface of the second intrinsic amorphous silicon layer ((i)a-Si:H); and a relatively thick second indium tin oxide film (ITO) is deposited on the lower surface of the second doped nanocrystalline silicon layer ((p)nc-Si:H).
  • the first indium tin oxide film is a hydrogen-doped indium tin oxide film with a thickness of 65 to 110 nm
  • the second indium tin oxide film is a hydrogen-doped indium tin oxide film with a thickness of 65 to 110 nm.
  • the above-mentioned hydrogen-doped indium tin oxide film is used to prepare a high-efficiency crystalline silicon solar heterojunction cell.
  • the manufacturing process of the high-efficiency heterojunction cell includes: doping + cleaning and texturing, plasma enhanced chemical vapor deposition (PECVD) passivation treatment, physical vapor deposition (PVD) hydrogen-doped indium tin oxide film, and screen printing.
  • PECVD plasma enhanced chemical vapor deposition
  • PVD physical vapor deposition
  • the present application provides an embodiment of an indium tin oxide thin film doped by the H2 process and an embodiment of an indium tin oxide thin film doped by the H2O process for a heterojunction battery, and uses a doping + cleaning and texturing step to treat the surface of a silicon wafer to improve its electrical properties and surface morphology.
  • a doping + cleaning and texturing step to treat the surface of a silicon wafer to improve its electrical properties and surface morphology.
  • an n-type CZ-si wafer with a size of 182 ⁇ 91 mm2 and a thickness of 150 ⁇ m is used, and ozone cleaning is used to remove organic pollutants and other impurities on the surface of the silicon wafer.
  • a phosphorus diffusion doping treatment is performed at 900°C for 2 hours to diffuse phosphorus atoms into the surface of the silicon wafer to form an n+ layer to improve the surface conductivity.
  • a 5% hydrofluoric acid (HF) solution is used for treatment for 300 seconds to remove the surface phosphosilicate glass (PSG) and the damage layer on the silicon wafer surface caused by mechanical cutting or phosphorus diffusion.
  • a micro-texture structure is then formed on the surface of the silicon wafer through a wet etching process to increase light absorption and reduce surface reflection.
  • a standard cleaning (RCA) is performed to thoroughly remove organic and inorganic pollutants on the surface, ensuring that the surface is clean and ready for subsequent process steps.
  • a plasma enhanced chemical vapor deposition (PECVD) passivation treatment method can be used to improve the electrical properties and stability of the wafer.
  • PECVD plasma enhanced chemical vapor deposition
  • a commercial PECVD system is used at a frequency of 13.56 MHz and a temperature of 190 ° C to deposit an intrinsic hydrogenated amorphous silicon layer (a-Si: H) on the front and back surfaces of the wafer to form a passivation film to protect the wafer from the influence of the external environment on the wafer.
  • This passivation film can reduce defects and damage on the surface of the wafer and improve the surface flatness and electrical properties of the wafer.
  • n-doped and p-doped nanocrystalline layers are deposited on the front and back surfaces of the silicon substrate respectively by a very high frequency system to change the conductive properties of the silicon substrate.
  • the physical vapor deposition (PVD) hydrogen-doped indium tin oxide film specifically includes: using magnetron sputtering to deposit a hydrogen-doped indium tin oxide film with a thickness of about 70nm to 80nm on the front and back sides of the cell after the doping nanocrystalline layer, specifically, using H2 process for deposition, selecting 991 target material, setting the power to 7-14kW, when depositing a hydrogen-doped indium tin oxide film with a thickness of 70nm to 80nm on the front side, the working gas includes 94.8% to 97% argon, 0.7% to 2.3% hydrogen and 2.3% to 2.9% oxygen by volume; when depositing a hydrogen-doped indium tin oxide film with a thickness of 75nm to 85nm on the back side, the working gas includes 95.2% to 97.4% argon, 0.6% to 2.2% hydrogen and 2% to 2.6% oxygen by volume, and the water vapor partial pressure formed during the
  • the corresponding indium tin oxide film with the above thickness can be obtained.
  • the water vapor partial pressure is controlled by the amount of water vapor generator in the H2O process, and the other parameters are consistent with the H2 process.
  • the silver paste can be accurately printed onto the first indium tin oxide film and the second indium tin oxide film of the battery cell using screen printing technology to form a metal grid line pattern.
  • the printed battery cell is then placed in an oven for drying and sintered at 200°C for 30 minutes to remove the solvent and organic matter in the silver paste, solidify the silver paste, melt the glass particles in the silver paste, and form good contact and adhesion with the indium tin oxide film, thereby forming a low-resistance metal conductive path, i.e., forming the first metal electrode and the second metal electrode.
  • a first metal electrode (Ag) is provided on the upper surface of the first indium tin oxide film, and a second metal electrode (Ag) is provided on the lower surface of the second indium tin oxide film.
  • the heterojunction solar cell prepared as described above was tested to verify the application performance of the hydrogen-doped indium tin oxide film in the finished battery. The results are shown in Figures 9 to 11.
  • FIG9 shows the photovoltaic characteristics of the heterojunction solar cell in an embodiment of the present application.
  • Figure 9 shows that the H2 process achieves a 0.09-0.15% gain in cell conversion efficiency (Eff) for ITO films compared to the H2O process, primarily manifested in a 0.18-0.25% improvement in fill factor (FF). Furthermore, the H2 process achieves an average short-circuit current (Jsc) of 39.96 mA/ cm2 and an average open-circuit voltage (Voc) of 0.7469 V for heterojunction solar cells; the H2O process achieves an average short-circuit current (Jsc) of 39.91 mA/ cm2 and an average open-circuit voltage (Voc) of 0.7468 V for heterojunction solar cells. This demonstrates that the H2 process offers an advantage in improving fill factor (FF) over the H2O process, leading to an increase in conversion efficiency (Eff).
  • FF fill factor
  • FIG10 is a graph showing the external quantum efficiency and reflectivity of a heterojunction solar cell according to an embodiment of the present application
  • FIG11 is a graph showing the contact resistance between the indium tin oxide film and the metal electrode on the front side of the heterojunction solar cell according to an embodiment of the present application.
  • the hydrogen-doped indium tin oxide film prepared by the H2 process has a good response in the wavelength range of 400nm to 600nm, showing a higher external quantum efficiency and lower reflectivity.
  • the corresponding photovoltaic characteristic curve shows an improvement of about 0.05mA/ cm2 in the short-circuit current (Jsc).
  • the indium tin oxide film prepared by the H2 process provided in this application can improve the contact resistance with the silver paste.
  • the contact resistance of the heterojunction solar cell corresponding to the indium tin oxide film prepared by the H2 process is 1.2m ⁇ .cm2
  • the contact resistance of the heterojunction solar cell corresponding to the indium tin oxide film prepared by the H2O process is 2.0m ⁇ .cm2 . It can be seen that the indium tin oxide film prepared by the H2 process can improve the contact resistance between it and the silver paste, which can improve the efficiency and performance of the solar cell.

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Abstract

本申请提供了一种氢掺杂的氧化铟锡薄膜、其制备方法和包含其的太阳能电池，其中，氢掺杂的氧化铟锡薄膜具有(400)晶面取向的第一X射线衍射峰和(222)晶面取向的第二X射线衍射峰，第一X射线衍射峰的强度大于第二X射线衍射峰的强度。

Description

氢掺杂的氧化铟锡薄膜、其制备方法和包含其的太阳能电池
本申请要求在2024年4月16日提交中国专利局、申请号为202410458381.1、名称为“氢掺杂的氧化铟锡薄膜、其制备方法和包含其的太阳能电池”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及太阳能电池技术领域，具体地，本申请涉及一种氢掺杂的氧化铟锡薄膜、其制备方法和包含其的太阳能电池。
背景技术
在太阳能电池制造领域中，晶体硅异质结太阳能电池(HJT电池，Heterojunction Intrinsic Thin Film solar cell)引起了广泛关注，通常被称为异质结电池。这种电池的特点在于在发射极和背面高浓度掺杂层与硅基片之间加入了一层本征非晶硅层，HJT电池结合了单结晶硅和非结晶硅的优点，制造过程中所需的温度较低，且具有良好的钝化效果。目前，异质结电池的累计产能不断增长，成为高效晶体硅电池领域的重要发展方向。
在以HJT电池为代表的太阳能电池中，TCO薄膜传输层作为载流子的横向传输通道，通常通过磁控溅射技术将ITO(氧化铟锡，一种常见的TCO薄膜材料)靶材分别溅射到电池片的正面和背面以形成传输层。在水汽工艺(H2O工艺)制备ITO的过程中，使用氩气(Ar)、氧气(O2)和水蒸气(H2O)作为工作气体，从而在电池片的表面形成ITO薄膜。
然而，ITO薄膜作为载流子传输通道，其导电性能还存在可改进的空间。并且在使用H2O工艺制备ITO薄膜的过程中，直接在腔体内通入气化的水蒸气，会导致靶材结瘤现象，从而降低靶材的利用率，并且工艺过程中参数的波动性大，增加了生产的复杂度和不稳定性，此外，载板治具需要频繁清洗，延长了维护成本和生产周期。
发明内容
有鉴于此，本申请的主要目的在于提供一种氢掺杂的氧化铟锡薄膜、其制备方法和包含其的太阳能电池，以期至少部分解决上述技术问题中的至少一种。
为了实现上述目的，本申请的技术方案如下：
根据本申请的一个方面的实施例，提供了一种氢掺杂的氧化铟锡薄膜，具有(400)晶面取向的第一X射线衍射峰和(222)晶面取向的第二X射线衍射峰，第一X射线衍射峰的强度大于第二X射线衍射峰的强度。
根据本申请的实施例，在氧化铟锡薄膜中，具有(400)晶面取向或具有(222)晶面取向的晶粒粒径为58～65nm。
根据本申请的实施例，(400)晶面的晶格间距为0.25～0.26nm，(222)晶面的晶格间距为0.29～0.30nm。
根据本申请的实施例，氧化铟锡薄膜还分别具有(440)晶面取向的第三X射线衍射峰和(622)晶面取向的第四X射线衍射峰；其中，第三X射线衍射峰和第四X射线衍射峰的强度分别小于第一X射线衍射峰的强度。
根据本申请的另一个方面的实施例，提供了一种氧化铟锡薄膜的制备方法，包括：采用磁控溅射法在基底上沉积氢掺杂的氧化铟锡薄膜，其中，磁控溅射法的沉积条件包括：工作气体按体积含量计包括94.8％～97.4％的氩气、0.6％～2.3％的氢气和2％～2.9％的氧气。
根据本申请的实施例，沉积条件还包括：磁控溅射法的溅射功率为7～14kw，使用的靶材为氧化铟锡靶材。
根据本申请的再一个方面的实施例，提供了一种太阳能电池，包括：基底；氢掺杂的氧化铟锡薄膜，形成于基底上；以及金属电极，形成于氧化铟锡薄膜上；其中，氢掺杂的氧化铟锡薄膜具有(400)晶面取向的第一X射线衍射峰和(222)晶面取向的第二X射线衍射峰，第一X射线衍射峰的强度大于第二X射线衍射峰的强度。
根据本申请的实施例，在氧化铟锡薄膜中，具有(400)晶面取向或具有(222)晶面取向的晶粒粒径为58～65nm。
根据本申请的实施例，(400)晶面的晶格间距为0.25～0.26nm，(222)晶面的晶格间距为0.29～0.30nm。
根据本申请的实施例，氧化铟锡薄膜还分别具有(440)晶面取向的第三X射线衍射峰和(622)晶面取向的第四X射线衍射峰；第三X射线衍射峰和第四X射线衍射峰的强度分别小于第一X射线衍射峰的强度。
根据本申请的实施例，基底包括依次层叠设置的第一掺杂纳米晶硅层、第一本征非晶硅层、晶硅衬底、第二本征非晶硅层、第二掺杂纳米晶硅层；其中，氢掺杂的氧化铟锡薄膜包括第一氧化铟锡薄膜和第二氧化铟锡薄膜，第一氧化铟锡薄膜形成于第一掺杂纳米晶硅层上，第二氧化铟锡薄膜形成于第二掺杂纳米晶硅层上；金属电极包括第一金属电极和第二金属电极，第一金属电极形成于第一氧化铟锡薄膜上，第二金属电极形成与第二氧化铟锡薄膜上。
根据本申请的实施例，第一氧化铟锡薄膜的厚度为65～110nm；第二氧化铟锡薄膜的厚度为65～110nm。
根据本申请的实施例，本申请提供了由优化的氢气工艺(H2工艺)制备的氢掺杂的氧化铟锡(In2O3:H)薄膜，具有特定的区别于H2O工艺的晶面取向。基于特有的(400)晶面取向的第一晶粒，本申请的In2O3:H薄膜在物理和电学性质上会表现出不同的特性，具有较少的缺陷和良好的导电性。将本申请的In2O3:H薄膜应用到太阳能电池上，有助于提升电池的转换效率等电学性能。
根据本申请的实施例，本申请采用的H2工艺抑制了H2O工艺容易出现的靶材结瘤现象，从而提升靶材的利用率。并且，由于不容易产生或引入杂质，使得工艺过程较为稳定，降低了磁控溅射设备的载板冶具的清洗频次，使得清洗周期延长了至少一倍，设备连续生产时间可增加至少30分钟/天。
附图说明
为了更清楚地说明本申请实施方式或现有技术中的技术方案，下面将对实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例中在绒面电池片和监控片上氢掺杂的氧化铟锡薄膜的X射线衍射图；
图2为本申请实施例中在监控片上氢掺杂和水汽掺杂的氧化铟锡薄膜的X射线衍射图；
图3为本申请实施例中绒面电池片上的氢掺杂的氧化铟锡薄膜的透射电子显微镜图；
图4为本申请实施例中绒面电池片上的氢掺杂的氧化铟锡薄膜的高分辨透射电子显微镜图；
图5为本申请实施例中在监控片上H2O工艺制备的氧化铟锡薄膜的透射电子显微镜图；
图6为本申请实施例中在监控片上H2O工艺制备的氧化铟锡薄膜的高分辨透射电子显微镜图；
图7为本申请实施例中H2O工艺中靶材结瘤的示意图；
图8为本申请一种实施方式中异质结太阳能电池的结构示意图；
图9为本申请实施例中异质结太阳能电池的光伏特性；
图10为本申请实施例中异质结太阳能电池的外量子效率和反射率曲线；
图11为本申请实施例中异质结太阳能电池正面的氧化铟锡薄膜与金属电极之间的接触电阻。
具体实施例
为使本申请的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本申请作进一步的详细说明。
在此使用的术语仅仅是为了描述具体实施例，而并非意在限制本申请。在此使用的术语“包括”、“包含”等表明了特征、步骤、操作和/或部件的存在，但是并不排除存在或添加一个或多个其他特征、步骤、操作或部件。在此使用的所有术语(包括技术和科学术语)具有本领域技术人员通常所理解的含义，除非另外定义。应注意，这里使用的术语应解释为具有与本说明书的上下文相一致的含义，而不应以理想化或过于刻板的方式来解释。
根据本申请的一种实施方式，提供了一种氧化铟锡薄膜的制备方法，包括：采用磁控溅射法在基底上沉积氢掺杂的氧化铟锡薄膜，基底包括抛光片或制绒后的硅片。
具体的，氧化铟锡薄膜的制备方法为H2工艺的氢掺杂的氧化铟锡薄膜，包括：通过物理气相沉积(PVD)技术在基底上沉积氢掺杂的氧化铟锡薄膜，优选为磁控溅射法，利用磁控溅射设备沉积氢掺杂的氧化铟锡薄膜。
根据本申请的实施方式，磁控溅射法的沉积条件包括：工作气体按体积含量计包括94.8％～97.4％的氩气、0.6％～2.3％的氢气和2％～2.9％的氧气，不同的气体组合可以影响薄膜沉积过程中晶粒的生长方式和取向。其中，工作气体中氢气的体积含量影响了氧化铟锡薄膜的化学还原性，有助于改善氧化铟锡薄膜的电导率和透明度。通过调整这些气体的比例，可以优化薄膜的沉积过程，控制晶粒的生长方式和取向，从而获得具有特定性能的薄膜。
根据本申请的实施方式，在沉积腔室中的水汽分压可以为3×10-3～9×10-3Pa，例如可以是3.2×10-3Pa、4.5×10-3Pa、5×10-3Pa、6.8×10-3Pa、8×10-3Pa等。但并不仅限于所列举的数值，该数值范围内其他未列举的数值同样适用。水汽的存在会影响薄膜表面的吸附和反应动力学，从而影响薄膜的生长过程和最终的薄膜性质，适量的水汽可以帮助调节薄膜的结构和应力状态，调整薄膜的生长速率和晶粒取向。在H2工艺制备过程中，形成水汽分压的影响因素主要包括：载板循环过程中自带的水汽、工艺腔体中氢气(H2)和氧气(O2)发生反应生成水(H2O)等。其中，工作气体中不同的氢气含量会带来水汽分压的变化，随着氢气含量变化，腔体内总的水分压会呈现规律性变化，如氢气含量越高，水汽分压也会越高，通过调整工作气体的比例和水汽分压，可以实现对薄膜性质的精确控制。
根据本申请的实施方式，磁控溅射工艺中是以氩气和氢气的混合气体形式提供氢气，其中氢浓度例如可以为2.8wt％，便于安全运输。并且磁控溅射设备工艺腔体内水汽分压由残余气体分析仪(RGA)监控。
根据本申请的实施方式，采用H2工艺制备氢掺杂的氧化铟锡薄膜时，工艺气体可以为Ar、O2、混合气(Ar+H2)；而采用H2O工艺制备的氧化铟锡薄膜时，工艺气体可以为Ar、O2、H2O。
根据本申请的实施方式，沉积条件还包括：磁控溅射法的溅射功率为7～14kw，例如可以是8kw、9kw、10kw、12kw、13kw等，但并不仅限于所列举的数值，该数值范围内其他未列举的数值同样适用。溅射功率影响氧化铟锡薄膜的沉积速率和薄膜性质，进而影响晶粒的生长速度和取向，较高的溅射功率可以增加溅射速率，但可能导致薄膜中的缺陷增加，影响薄膜质量。并且还发现，若溅射功率过低，还容易诱导溅射靶材结瘤，从而影响沉积薄膜的质量。因此，选择该范围内的溅射功率可以实现对薄膜沉积过程的有效控制，平衡沉积速率和薄膜质量之间的关系。
根据本申请的实施方式，使用的靶材为氧化铟锡靶材。在磁控溅射过程中靶材例如可以为991靶材(或称VTTO)，即靶材中含有99％的氧化铟，剩余1％的其他多元素物质，基于与微晶硅衬底之间的功函数匹配性选择991靶材，可以提供较好的溅射效果，有助于获得高质量的氧化铟锡薄膜。
根据本申请的实施方式，采用上述制备方法中由于H2工艺是较为清洁的工艺，不容易产生或引入杂质，磁控溅射设备载板的清洗周期可以延长1倍以上，能够减少设备的停机时间，提高生产效率。并且，由于靶材不容易产生结瘤，设备使用靶材利用率可以由70％提升至80％以上，设备连续生产时间每天可增加30min以上。
根据本申请的提供的氧化铟锡薄膜制备方法的实施方式，提供了一种氢掺杂的氧化铟锡薄膜，能够在量产制备过程中降低生产成本(包括初期的投资成本和日常的运营成本)，并有效提高电池片的光电转换效率(即提高电池将光能转换为电能的能力)。
根据本申请的一个方面的实施方式，提供了一种H2工艺制备氢掺杂的氧化铟锡薄膜，分别在抛光监控片上制备氢掺杂的氧化铟锡薄膜和绒面电池片上制备得到的氢掺杂的氧化铟锡薄膜，这两种氧化铟锡薄膜存在共有和特有的晶粒取向。
图1为本申请实施例中H2工艺制备在绒面电池片和监控片上氢掺杂的氧化铟锡薄膜的X射线衍射图。
如图1所示，为本申请实施例中H2工艺制备氢掺杂的氧化铟锡薄膜的X射线衍射图。在2θ为21.5°处观察到氢掺杂的氧化铟锡薄膜特有的(211)晶面取向的X射线衍射峰。在2θ为30.6°出现氧化铟锡薄膜典型的(222)面晶面取向的X射线衍射峰，在2θ为35.5°处观察到氢掺杂的氧化铟锡薄膜特有的(400)晶面取向的X射线衍射峰。在2θ为51.0°处观察到氢掺杂的氧化铟锡薄膜特有的(440)晶面取向的X射线衍射峰，在2θ为61.8°处观察到氢掺杂的氧化铟锡薄膜特有的(622)晶面取向的X射线衍射峰，通过出峰情况呈现结晶状态较为良好的多晶结构。根据本申请绒面电池片上制备得到的氢掺杂的氧化铟锡薄膜，通过X射线衍射法测量的(400)晶面的第一X射线衍射峰强度大于(222)晶面的第二X射线衍射峰强度。表明本申请中氢掺杂的氧化铟锡薄膜的(400)晶面取向的晶粒结晶度相较于(222)晶面取向的晶粒结晶度较强。
根据本申请的实施方式，氧化铟锡薄膜还分别具有(440)晶面取向的第三X射线衍射峰和(622)晶面取向的第四X射线衍射峰；其中，第三X射线衍射峰和第四X射线衍射峰的强度分别小于第一X射线衍射峰的强度。
进一步的，本申请还进行了H2O工艺制备的氧化铟锡薄膜作为对比实施方式，并和H2工艺制备氢掺杂监控片上的氧化铟锡薄膜进行XRD衍射测试对比。
图2为本申请实施例中H2工艺制备在监控片上氢掺杂和水汽工艺制备的氧化铟锡薄膜的X射线衍射图。
如图2所示，H2O工艺制备的氧化铟锡薄膜和H2工艺制备氢掺杂的氧化铟锡薄膜在21.5°、30.6°处均出现的X射线衍射峰对应于(211)和(222)晶面的取向，同时H2O工艺制备的氧化铟锡薄膜还在41.8°和63.7°处出现(332)和(444)晶面取向的X射线衍射峰，其中H2O工艺制备得到的薄膜不存在(440)晶面取向和(622)晶面取向的X射线衍射峰。
结合图2对本申请中H2工艺制备氢掺杂的氧化铟锡薄膜的(222)晶面取向和H2O工艺制备的氧化铟锡薄膜在(222)晶面取向进行高斯模拟，得到(222)晶面的X射线衍射峰的半高宽(FWHM)，并计算发现H2工艺制备氢掺杂的氧化铟锡薄膜的晶粒尺寸为63.7nm，H2O工艺制备的氧化铟锡薄膜的晶粒尺寸为65.2nm，由此可知，两种氧化铟锡薄膜的晶粒尺寸基本相同，没有较大差异。通过2θ角对应X射线衍射峰的半高宽(FWHM)代入谢乐(Scherrer)公式计算得到晶粒尺寸，在(400)晶面取向晶粒的粒径为59～65nm，例如可以是59.5nm、60.2nm、61.5nm、62.3nm、64.8nm等；在(222)晶面取向晶粒的粒径为58～64nm，例如可以是58.2nm、59.3nm、60.5nm、62.7nm、63.5nm等。但并不仅限于所列举的数值，该数值范围内其他未列举的数值同样适用。
图3为本申请实施例中绒面电池片上H2工艺制备的氢掺杂的氧化铟锡薄膜的透射电子显微镜图；图4为本申请实施例中绒面电池片上的氢掺杂的氧化铟锡薄膜的高分辨透射电子显微镜图。
从图3可以看出H2工艺制备得到的绒面电池片上的氢掺杂的氧化铟锡薄膜的透射电镜横截面图显示为均匀无柱状结构，膜厚为73nm，结合图4所示区域测得晶格间距分别为0.253nm和0.297nm。对比PDF卡片数据库，由氧化铟锡的晶面间距PDF卡片(JCPDS 060416)对应可知，图示区域对应氧化铟(In2O3)相的(400)和(222)晶面，这一结果与图1中的X射线衍射数据一致。(400)晶面的晶格间距为0.25～0.26nm，例如可以是0.251nm、0.252nm、0.253nm、0.254nm、0.255nm、0.256nm、0.257nm、0.258nm、0.259nm或0.260nm，(222)晶面的晶格间距为0.29～0.30nm，例如可以是0.291nm、0.292nm、0.293nm、0.294nm、0.295nm、0.296nm、0.297nm、0.298nm、0.299nm或0.290nm。
图5为本申请实施例中在监控片上H2O工艺制备的氧化铟锡薄膜的透射电子显微镜图；图6为本申请实施例在监控片上中H2O工艺制备的氧化铟锡薄膜的高分辨透射电子显微镜图。
由图5可以看出，H2O工艺制备的氧化铟锡薄膜与H2工艺相似，同样具有均匀的无柱状晶体结构，其膜厚为94.5nm，结合图5所示区域测得晶格间距分别为0.213nm和0.295nm，对比PDF卡片数据库，图示区域对应氧化铟(In2O3)相的(332)和(222)晶面，也与图1中的物相分析结果相互印证。
根据本申请的H2工艺制备得到的绒面电池片上的氢掺杂的氧化铟锡薄膜，氧化铟锡薄膜的厚度为65～110nm，例如可以是65nm、68nm、71nm、73nm、75nm、78nm、80nm、83nm、85nm、88nm、91nm、94nm、96nm、100nm、102nm、105nm、108nm、110nm等；方阻为35～50Ω/sq，例如可以是36Ω/sq、40Ω/sq、43Ω/sq、47Ω/sq、49Ω/sq等。
根据本申请的实施例，在抛光监控片上H2工艺制备得到的氧化铟锡薄膜的厚度为100～120nm，例如可以是101nm、106nm、110nm、112nm、115nm、118nm、120nm等；方阻为25～50Ω/sq，例如可以是26Ω/sq、30Ω/sq、32Ω/sq、35Ω/sq、40Ω/sq、45Ω/sq、50Ω/sq等；霍尔迁移率为65～85cm2/v.s，例如可以是67cm2/v.s、69cm2/v.s、70cm2/v.s、75cm2/v.s、81cm2/v.s、85cm2/v.s等；载流子浓度为1.85×1020～2.2×1020个/cm3，例如可以是1.86×1020个/cm3、1.95×1020个/cm3、2.1×1020个/cm3、2.15×1020个/cm3、2.17×1020个/cm3、2.18×1020个/cm3、2.2×1020个/cm3等；电阻率为3×10-4～5×10-4Ω·cm，例如可以是3.2×10-4Ω·cm、3.5×10-4Ω·cm、3.8×10-4Ω·cm、4.2×10-4Ω·cm、4.8×10-4Ω·cm等。但并不仅限于所列举的数值，该数值范围内其他未列举的数值同样适用。该氧化铟锡薄膜可选用不同的厚度用在光伏电池的正面或背面，兼具有较优的光透过性能和导电性能。
需要说明的是，氧化铟锡薄膜的厚度例如可以采用椭偏仪测量得到。方阻例如可以采用四探针法进行测量。霍尔迁移率、载流子浓度和电阻率可以是采用霍尔效应实验仪测量得到，其中，氧化铟锡薄膜霍尔参数的测量可以在透明玻璃上进行，即，以透明玻璃作为基底的监控片制备氧化铟锡薄膜。
表1为不同氢含量的在监控片上H2工艺制备的氧化铟锡薄膜性能表，表2为不同水汽分压在监控片的H2O工艺制备的氧化铟锡薄膜性能表。
表1不同氢含量的在监控片上H2工艺制备的氧化铟锡薄膜性能表
表2不同水汽分压在监控片上的H2O工艺制备的氧化铟锡薄膜性能表
由表1可以看出，H2工艺中氢含量为0.9％时，制备得到的氧化铟锡薄膜载流子浓度较低，表明薄膜的缺陷较少，电流相对较高，并且具有较高的迁移率和较低的方阻，表明该工艺制备得到的氧化铟锡薄膜的导电性较好，从而能够在电池中表现出较高的转换效率。在H2O工艺中通过水汽发生器的通入量来控制水汽分压，其余参数和H2工艺保持一致，例如不同水汽分压对应的H含量均设置为0.9％，由表2分析可知，在H2O工艺中水汽分压为5×10-3Pa时，得到的氧化铟锡薄膜的综合性能较优。
根据本申请的实施例，H2O工艺制备氧化铟掺杂氢薄膜(In2O3:H薄膜)的工艺过程中监控波动性较大，直接在腔体内通气化的水蒸气向水汽发生器通水，会导致制备过程的不稳定性，使靶材表面湿度过高导致靶材结瘤现象，影响薄膜的质量和一致性。
图7为本申请实施例中H2O工艺中靶材结瘤的示意图，如图7所示，在溅射过程中靶材表面会形成团块或结瘤，影响溅射的均匀性和薄膜质量。H2O工艺效率稳定性差，不利于量产。
根据本申请一种具体实施方式，提供了一种太阳能电池，包括：基底；氢掺杂的氧化铟锡薄膜，形成于基底上；以及金属电极，形成于氧化铟锡薄膜上；其中，氢掺杂的氧化铟锡薄膜具有(400)晶面取向的第一X射线衍射峰和(222)晶面取向的第二X射线衍射峰，第一X射线衍射峰的强度大于第二X射线衍射峰的强度。
根据本申请的实施例，氢掺杂的氧化铟锡薄膜可替代现有的ITO薄膜，可以用于制备包含异质结电池结构的太阳能电池，可以包括：异质结电池(HJT)、背接触电池(BC)、HJT联合BC技术的HBC电池(HJT-BC)、TOPCon联合BC技术的TBC电池(Topcan-BC)。
根据本申请的实施例，由于太阳能电池中所使用的氧化铟锡薄膜的参数和性能与前文所描述的氧化铟锡薄膜一致，在此不作赘述。
根据本申请的实施例，以典型的异质结太阳能电池为例，基底可以包括依次层叠设置的第一掺杂纳米晶硅层、第一本征非晶硅层、晶硅衬底、第二本征非晶硅层、第二掺杂纳米晶硅层；其中，氢掺杂的氧化铟锡薄膜包括第一氧化铟锡薄膜和第二氧化铟锡薄膜，第一氧化铟锡薄膜形成于第一掺杂纳米晶硅层上，第二氧化铟锡薄膜形成于第二掺杂纳米晶硅层上；金属电极包括第一金属电极和第二金属电极，第一金属电极形成于第一氧化铟锡薄膜上，第二金属电极形成与第二氧化铟锡薄膜上。
图8为本申请一种实施方式中异质结太阳能电池的结构示意图，如图8所示，该异质结太阳能电池包括n型硅基底(n-Si)，n型硅基底(n-Si)的上表面(受光侧表面)为第一本征非晶硅层((i)a-Si：H)，第一本征非晶硅层((i)a-Si：H)上表面沉积有锯齿状的n掺杂的第一掺杂纳米晶硅层((n)nc-Si：H)，进一步地，在第一掺杂纳米晶硅层((n)nc-Si：H)的上表面沉积有厚度相对较薄的第一氧化铟锡薄膜(ITO)。n型硅基底(n-Si)的下表面(背光侧表面)为第二本征非晶硅层((i)a-Si：H)；第二本征非晶硅层((i)a-Si：H)下表面沉积有锯齿状的p掺杂的第二掺杂纳米晶硅层((p)nc-Si：H)；在第二掺杂纳米晶硅层((p)nc-Si：H)的下表面沉积有厚度相对较厚的第二氧化铟锡薄膜(ITO)。
根据本申请的实施方式，第一氧化铟锡薄膜为厚度为65～110nm的氢掺杂的氧化铟锡薄膜，第二氧化铟锡薄膜为厚度为65～110nm的氢掺杂的氧化铟锡薄膜。通过控制氧化铟锡薄膜厚度在合适范围内，可以兼顾光透过性能的同时，取得较优的导电性能。
根据本申请的实施方式，利用上述氢掺杂的氧化铟锡薄膜制备高效晶硅太阳能异质结电池，高效异质结电池的制造流程包括：吸杂+清洗制绒、等离子体增强化学气相沉积(PECVD)钝化处理、物理气相沉积(PVD)氢掺杂氧化铟锡薄膜、丝网印刷。
具体的，本申请提供一个异质结电池的H2工艺掺杂的氧化铟锡薄膜实施例和H2O工艺掺杂的氧化铟锡薄膜实施例，采用吸杂+清洗制绒步骤处理硅晶圆表面，以改善其电学特性和表面形貌。具体地，采用尺寸为182×91mm2、厚度为150μm的n型直拉单晶硅(CZ-si)晶圆，使用臭氧清洗去除硅晶圆表面的有机污染物和其他杂质。在900℃下进行2小时的磷扩吸杂处理，使磷原子扩散进入硅晶圆表面，形成n+层，以提高表面的电导率。随后使用5％的氢氟酸(HF)溶液处理300秒，去除表面的磷硅酸盐玻璃(PSG)和硅晶圆表面因机械切割或磷扩散产生的损伤层。再通过湿法蚀刻工艺在硅晶圆表面形成微绒面结构，以增加光的吸收和减少表面反射，最后进行标准清洗(RCA)以彻底去除表面的有机和无机污染物，确保表面清洁和准备好进行后续工艺步骤。
根据本申请的实施例，等离子体增强化学气相沉积(PECVD)钝化处理方法可以用于改善晶圆的电学性能和稳定性，具体地，在这个过程中，使用商用PECVD系统以13.56MHz的频率，在190℃的温度下，在晶圆的正反面沉积本征氢化非晶硅层(a-Si：H)，形成一层钝化膜来保护晶圆，防止外部环境对晶圆的影响。这层钝化膜可以减少晶圆表面的缺陷和损伤，提高晶圆的表面平整度和电学特性。在钝化处理后，通过甚高频系统分别在硅衬底的正反表面沉积n掺杂和p掺杂纳米晶层，以改变硅衬底的导电性质。
根据本申请的实施例，采用物理气相沉积(PVD)氢掺杂氧化铟锡薄膜具体包括：采用磁控溅射在掺杂纳米晶层后的电池片正反两面分别沉积厚度为70nm～80nm左右的氢掺杂氧化铟锡薄膜，具体地，采用H2工艺进行沉积，选用991靶材，功率设定为7～14kW，在正面沉积厚度为70nm～80nm的氢掺杂氧化铟锡薄膜时，工作气体按体积含量计包括94.8％～97％的氩气、0.7％～2.3％的氢气和2.3％～2.9％的氧气；在反面沉积厚度为75nm～85nm的氢掺杂氧化铟锡薄膜时，工作气体按体积含量计包括95.2％～97.4％的氩气、0.6％～2.2％的氢气和2％～2.6％的氧气，磁控溅射沉积过程中形成的水汽分压为3×10-3Pa～9×10-3Pa。分别对应可得到上述厚度的氧化铟锡薄膜。采用H2O工艺掺杂的氧化铟锡薄膜实施例，在H2O工艺中通过水汽发生器的通入量来控制水汽分压，其余参数和H2工艺保持一致。
根据本申请的实施例，以第一金属电极和第二金属电极为银电极为例，可以使用丝网印刷技术将银浆精确地印刷到电池片的第一氧化铟锡薄膜和第二氧化铟锡薄膜上，形成金属栅线图案，随后将印刷好的电池片放入烘箱中烘干，并在200℃下烧结30分钟，以去除银浆中的溶剂和有机物，固化银浆，使银浆中的玻璃颗粒熔化并与氧化铟锡薄膜形成良好的接触和黏合，同时形成低电阻的金属导电路径，即形成第一金属电极和第二金属电极。
根据本申请的实施例，结合图8所示，第一氧化铟锡薄膜的上表面设置有第一金属电极(Ag)，第二氧化铟锡薄膜的下表面设置有第二金属电极(Ag)。
根据本申请的实施例，对上述制备得到的异质结太阳能电池进行测试，验证氢掺杂的氧化铟锡薄膜在成品电池中的应用性能，结果如图9～图11所示。
图9为本申请实施例中异质结太阳能电池的光伏特性。
由图9可以看出，H2工艺相较于H2O工艺制备的氧化铟锡薄膜在电池片转换效率(Eff)上有0.09～0.15％的增益，主要表现在填充因子(FF)有0.18～0.25％的提升。此外，H2工艺对应的异质结太阳能电池的短路电流(Jsc)平均为39.96mA/cm2，开路电压(Voc)平均为0.7469V；H2O工艺对应的异质结太阳能电池的短路电流(Jsc)平均为39.91mA/cm2，开路电压(Voc)平均为0.7468V。由此可见，H2工艺相较于H2O工艺制备的氧化铟锡薄膜在提高填充因子(FF)方面表现出优势，从而带来了转换效率(Eff)的增益。
图10为本申请实施例中异质结太阳能电池的外量子效率和反射率曲线；图11为本申请实施例中异质结太阳能电池正面的氧化铟锡薄膜与金属电极之间的接触电阻。
由图10结合图9可以看出，H2工艺制备的氢掺杂的氧化铟锡薄膜在波长为400nm～600nm范围内响应较好，表现为较高的外量子效率和较低的反射率，与之对应的光伏特性曲线中短路电流(Jsc)有0.05mA/cm2左右的提升。进一步地，由图11可以看出，本申请中提供的H2工艺制备氧化铟锡薄膜能够改善与银浆之间的接触电阻，H2工艺制备的氧化铟锡薄膜对应的异质结太阳能电池的接触电阻为1.2mΩ.cm2，H2O工艺制备的氧化铟锡薄膜对应的异质结太阳能电池的接触电阻为2.0mΩ.cm2。可见，H2工艺制备的氧化铟锡薄膜能够改善其与银浆之间的接触电阻，能够提高太阳能电池的效率和性能。
以上所述的具体实施例，对本申请的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本申请的具体实施例而已，并不用于限制本申请，凡在本申请的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。

Claims (12)

  1. 一种氢掺杂的氧化铟锡薄膜，具有(400)晶面取向的第一X射线衍射峰和(222)晶面取向的第二X射线衍射峰，所述第一X射线衍射峰的强度大于所述第二X射线衍射峰的强度。
  2. 根据权利要求1所述的氧化铟锡薄膜，其中：
    在所述氧化铟锡薄膜中，具有(400)晶面取向或具有(222)晶面取向的晶粒粒径为58～65nm。
  3. 根据权利要求1所述的氧化铟锡薄膜，其中，所述(400)晶面的晶格间距为0.25～0.26nm，所述(222)晶面的晶格间距为0.29～0.30nm。
  4. 根据权利要求1至3中任一项所述的氧化铟锡薄膜，其中，
    所述氧化铟锡薄膜还分别具有(440)晶面取向的第三X射线衍射峰和(622)晶面取向的第四X射线衍射峰；
    其中，所述第三X射线衍射峰和所述第四X射线衍射峰的强度分别小于所述第一X射线衍射峰的强度。
  5. 一种如权利要求1至4中任一项所述的氧化铟锡薄膜的制备方法，包括：
    采用磁控溅射法在基底上沉积氢掺杂的氧化铟锡薄膜，其中，所述磁控溅射法的沉积条件包括：
    工作气体按体积含量计包括94.8％～97.4％的氩气、0.6％～2.3％的氢气和2％～2.9％的氧气。
  6. 根据权利要求5所述的制备方法，其中，所述沉积条件还包括：
    所述磁控溅射法的溅射功率为7～14kw，使用的靶材为氧化铟锡靶材。
  7. 一种太阳能电池，包括：
    基底；
    氢掺杂的氧化铟锡薄膜，形成于所述基底上；以及
    金属电极，形成于所述氧化铟锡薄膜上；
    其中，所述氢掺杂的氧化铟锡薄膜具有(400)晶面取向的第一X射线衍射峰和(222)晶面取向的第二X射线衍射峰，所述第一X射线衍射峰的强度大于所述第二X射线衍射峰的强度。
  8. 根据权利要求7所述的太阳能电池，其中，
    在所述氧化铟锡薄膜中，具有(400)晶面取向或具有(222)晶面取向的晶粒粒径为58～65nm。
  9. 根据权利要求7所述的太阳能电池，其中，所述(400)晶面的晶格间距为0.25～0.26nm，所述(222)晶面的晶格间距为0.29～0.30nm。
  10. 根据权利要求7所述的太阳能电池，其中，
    所述氧化铟锡薄膜还分别具有(440)晶面取向的第三X射线衍射峰和(622)晶面取向的第四X射线衍射峰；
    所述第三X射线衍射峰和所述第四X射线衍射峰的强度分别小于所述第一X射线衍射峰的强度。
  11. 根据权利要求8所述的太阳能电池，其中，
    所述基底包括依次层叠设置的第一掺杂纳米晶硅层、第一本征非晶硅层、晶硅衬底、第二本征非晶硅层、第二掺杂纳米晶硅层；
    其中，所述氢掺杂的氧化铟锡薄膜包括第一氧化铟锡薄膜和第二氧化铟锡薄膜，所述第一氧化铟锡薄膜形成于所述第一掺杂纳米晶硅层上，所述第二氧化铟锡薄膜形成于所述第二掺杂纳米晶硅层上；
    所述金属电极包括第一金属电极和第二金属电极，所述第一金属电极形成于所述第一氧化铟锡薄膜上，所述第二金属电极形成于所述第二氧化铟锡薄膜上。
  12. 根据权利要求11所述的太阳能电池，其中，
    所述第一氧化铟锡薄膜的厚度为65～110nm；所述第二氧化铟锡薄膜的厚度为65～110nm。
PCT/CN2025/088607 2024-04-16 2025-04-11 氢掺杂的氧化铟锡薄膜、其制备方法和包含其的太阳能电池 Pending WO2025218600A1 (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000128698A (ja) * 1998-10-22 2000-05-09 Toyota Motor Corp Ｉｔｏ材、ｉｔｏ膜及びその形成方法、並びにｅｌ素子
JP2011018623A (ja) * 2009-07-10 2011-01-27 Geomatec Co Ltd 透明導電膜及びその製造方法
CN106571174A (zh) * 2016-11-09 2017-04-19 宜昌南玻显示器件有限公司 透明导电薄膜的制备方法及透明导电薄膜
CN208173610U (zh) * 2018-05-08 2018-11-30 中智(泰兴)电力科技有限公司 一种晶体硅异质结太阳电池结构
CN116469946A (zh) * 2023-05-17 2023-07-21 通威太阳能（成都）有限公司 太阳电池及其制备方法
CN118430874A (zh) * 2024-04-16 2024-08-02 隆基绿能科技股份有限公司 氢掺杂的氧化铟锡薄膜、其制备方法和包含其的太阳能电池

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000128698A (ja) * 1998-10-22 2000-05-09 Toyota Motor Corp Ｉｔｏ材、ｉｔｏ膜及びその形成方法、並びにｅｌ素子
JP2011018623A (ja) * 2009-07-10 2011-01-27 Geomatec Co Ltd 透明導電膜及びその製造方法
CN106571174A (zh) * 2016-11-09 2017-04-19 宜昌南玻显示器件有限公司 透明导电薄膜的制备方法及透明导电薄膜
CN208173610U (zh) * 2018-05-08 2018-11-30 中智(泰兴)电力科技有限公司 一种晶体硅异质结太阳电池结构
CN116469946A (zh) * 2023-05-17 2023-07-21 通威太阳能（成都）有限公司 太阳电池及其制备方法
CN118430874A (zh) * 2024-04-16 2024-08-02 隆基绿能科技股份有限公司 氢掺杂的氧化铟锡薄膜、其制备方法和包含其的太阳能电池

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LIU FENG: "Study on Transparent Conductive Properties of ITO Thin Films Prepared by RF Magnetron Sputtering", CHINESE MASTER'S THESES FULL-TEXT DATABASE, 1 May 2018 (2018-05-01), pages 1 - 79, XP093363947 *

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