Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

• the present invention relates to a joining method and joining system.
• An electronic component mounting method has been proposed in which multiple chips are stacked and arranged flat on a substrate.
• the multiple chips are then arranged face-up on a resin layer formed on a temporary substrate and temporarily fixed, and the temporary substrate is then turned upside down so that the multiple chips are held face-down on the temporary substrate.
• the substrate and temporary substrate are brought relatively close together, thereby bonding the chips held on the temporary substrate and the chips mounted on the substrate, and then the temporary substrate is separated from the chips while maintaining the bonded state (see, for example, Patent Document 1).
• the chips are temporarily fixed to a resin layer.
• the chips held on the temporary substrate may become misaligned, making it difficult to mount the chips on the substrate with high positional accuracy.
• the present invention was made in consideration of the above-mentioned reasons, and aims to provide a bonding method and bonding system that can bond a chip to a substrate with high positional accuracy.
• the bonding method comprises: a first hydrophilization step of hydrophilizing at least one of a temporary bonding surface of a temporary substrate to which at least one first chip is temporarily bonded and a side of the at least one first chip opposite to a bonding surface side to be bonded to the substrate; a first temporary bonding step of temporarily bonding a side of the at least one first chip opposite to the bonding surface side to the temporary bonding surface of the temporary substrate after the first hydrophilization step; a first main bonding step of bonding the at least one first chip to the substrate by bringing the temporary substrate relatively close to the substrate while the temporary bonding surface of the temporary substrate faces the substrate, and bringing the bonding surface of the at least one first chip into contact with the bonding surface of the substrate after the first temporary bonding step; and a first temporary substrate peeling step of peeling the temporary substrate from the at least one first chip while maintaining the at least one first chip bonded to the substrate.
• chips can be bonded to substrates with high positional accuracy.
• FIG. 1 is a schematic diagram of a joint system according to an embodiment of the present invention.
• 1 is a schematic front view of a portion of a joint system according to an embodiment.
• 1 is a schematic configuration diagram of a part of a tip joining device according to an embodiment.
• 5A and 5B are diagrams showing the positional relationship between the alignment mark of the chip and the hollow portion of the head according to the embodiment;
• FIG. 2 is a cross-sectional view showing a part of the head according to the embodiment, showing a state in which a tip is held by the head.
• FIG. 10 is a cross-sectional view showing a part of the head according to the embodiment, showing a state in which the center of the tip is pressed.
• FIG. 2 is a schematic perspective view showing a part of a bonding portion according to an embodiment.
• 4 is a cross-sectional view of the chip joining device according to the embodiment taken along line AA in FIG. 3.
• FIG. 10 is a diagram showing two alignment marks provided on a chip.
• FIG. 10 is a diagram showing two alignment marks provided on a temporary substrate.
• FIG. 2 is a plan view of a stage of the chip bonding apparatus according to the embodiment.
• FIG. 2 is a side view of a stage of the chip bonding apparatus according to the embodiment.
• 5A to 5C are explanatory views of the operation of the tip joining device according to the embodiment.
• FIG. 2 is a plan view showing an example of a dummy chip according to the embodiment.
• FIG. 1 is a schematic cross-sectional view of an activation treatment apparatus according to an embodiment.
• 1 is a schematic front view of a substrate bonding apparatus according to an embodiment.
• 2 is a schematic cross-sectional view of a stage and a head of the substrate bonding apparatus according to the embodiment.
• FIG. FIG. 10 is a diagram showing two alignment marks provided on a temporary substrate.
• FIG. 2 is a diagram showing two alignment marks provided on a substrate.
• FIG. 2 is a block diagram showing a part of the functional configuration of a control unit according to the embodiment.
• 10A and 10B are schematic diagrams showing captured images of alignment marks on a chip and a temporary substrate.
• FIG. 10 is a schematic diagram showing a state in which the alignment marks of the chip and the temporary substrate are misaligned with each other.
• the chip bonding system temporarily fixes multiple chips on a temporary substrate, then places the temporary substrate opposite the substrate to which the multiple chips are bonded, and then brings the temporary substrate close to the substrate, thereby bringing the multiple chips temporarily fixed to the temporary substrate into contact with the multiple chips bonded to the substrate and bonding them.
• chips include semiconductor chips with through-electrodes that penetrate the substrate in the thickness direction, and in which an insulating material and a conductive material are exposed on the bonding surface to be bonded to the substrate or another chip.
• insulating materials include oxides such as SiO 2 and Al 2 O 3 , nitrides such as SiN and AlN, oxynitrides such as SiON, and resins.
• conductive materials include semiconductor materials such as Si and Ge, and metals such as Cu, Al, and solder.
• the chip may have multiple regions of different materials formed on its bonding surface.
• the chip may have an electrode and an insulating film provided on its bonding surface, and the insulating film may be made of an oxide such as SiO 2 or Al 2 O 3 or a nitride such as SiN or AlN.
• the chip bonding system 1 includes a chip supply device 10, a substrate bonding device 20, a chip transport device 39, a chip bonding device 30, an activation processing device 60, a transport device 70, a carry-in/out unit 80, a cleaning device 85, and a control unit 90.
• the transport device 70 has a transport robot 71 with an arm that grasps annular frames RI2 and RI3 that hold a temporary substrate WTD or a sheet TE to which chips CP are attached.
• the sheet TE is made of, for example, resin.
• the transport robot 71 can move the annular frames RI2 and RI3 that hold the temporary substrate WTD, substrate W1, or sheet TE to which chips CP are attached, received from the carry-in/out unit 80, to positions where they can be transferred to the substrate bonding device 20, activation processing device 60, cleaning device 85, chip bonding device 30, and chip supply device 10, respectively.
• the transfer robot 71 When the transfer robot 71 receives the temporary substrate WTD from the carry-in/out unit 80, it moves to a position where it will transfer the temporary substrate WTD to the activation processing device 60 while holding the temporary substrate WTD, inverts the temporary substrate WTD while holding the temporary substrate WTD, and then transfers the temporary substrate WTD to the activation processing device 60. After the activation processing of the temporary substrate WTD is completed in the activation processing device 60, the transfer robot 71 receives the temporary substrate WTD from the activation processing device 60, inverts the temporary substrate WTD while holding the temporary substrate WTD, and then transfers the temporary substrate WTD to the cleaning device 85.
• the transfer robot 71 After the water cleaning of the temporary substrate WTD is completed in the cleaning device 85, the transfer robot 71 receives the temporary substrate WTD from the cleaning device 85, inverts the temporary substrate WTD while holding the temporary substrate WTD, and then moves to a position where it will transfer the temporary substrate WTD to the chip bonding device 30. The transfer robot 71 then transfers the temporary substrate WTD to the chip bonding device 30. Furthermore, when the transport robot 71 receives the substrate W1 from the carry-in/out unit 80, it moves to a position where it will transfer the substrate W1 to the activation treatment device 60 while holding the received substrate W1, and transfers the substrate W1 to the activation treatment device 60. Then, after the activation treatment of the substrate W1 is completed in the activation treatment device 60, the transport robot 71 receives the substrate W1 from the activation treatment device 60 and transfers the received substrate W1 to the substrate bonding device 20.
• the transport robot 71 when the transport robot 71 receives from the carry-in/out unit 80 annular frames RI2, RI3 holding a sheet TE to which multiple chips CP are attached, it moves the received annular frames RI2, RI3 while holding them to a position where they will be transferred to the activation processing device 60, turns over the annular frames RI2, RI3, and then transfers the annular frames RI2, RI3 to the activation processing device 60.
• the transport robot 71 receives the annular frames RI2, RI3 from the activation processing device 60, turns over the annular frames RI2, RI3 while holding them, and then transfers them to the cleaning device 85. Furthermore, after the cleaning device 85 has completed water cleaning of the chips CP attached to the sheet TE held by the annular frames RI2, RI3, the transfer robot 71 receives the annular frames RI2, RI3 from the cleaning device 85, and while holding the received annular frames RI2, RI3, inverts them and transfers them to the chip supply device 10.
• a HEPA (High Efficiency Particulate Air) filter (not shown), for example, is installed inside the transfer device 70. This creates an atmospheric pressure environment with extremely few particles inside the transfer device 70.
• the cleaning device 85 includes a stage 852 that supports the temporary substrate WTD, substrate W1, or annular frames RI2 and RI3; a stage driver 853 that rotates and drives the stage 852; a cleaning head 851 that is positioned vertically above the stage 852 and ejects water vertically downward; and a cleaning head driver (not shown) that moves the cleaning head 851 horizontally.
• the stage 852 includes a suction unit that adsorbs the temporary substrate WTD, substrate W1, or sheet TE, and adsorbs and holds the temporary substrate WTD, substrate W1, or sheet TE that has multiple chips CP attached and is held by the annular frames RI2 and RI3.
• the stage 852 may also hold the annular frames RI2 and RI3 along with the sheet TE.
• the cleaning head driver has a mechanism for moving the cleaning head 851 in the X-axis and Y-axis directions.
• the stage drive unit 853 rotates the stage 852 around the central axis of the temporary substrate WTD, substrate W1 or annular frame RI2, RI3 along the Z-axis direction, and sprays water from the cleaning head 851 toward the temporary substrate WTD, substrate W1 or sheet TE while moving the cleaning head 851 horizontally, i.e., in the X-axis direction or Y-axis direction, thereby water-cleaning the multiple chips CP attached to the temporary substrate WTD, substrate W1 or sheet TE.
• the chip supply device 10 cuts out one chip CP from multiple chips CP attached to the sheet TE and supplies the chip CP to the chip bonding device 30.
• the chip supply device 10 has a chip supply unit 11.
• the chip supply unit 11 has a frame support unit 112, a pickup mechanism 111 that picks up one chip CP from multiple chips CP, and an adsorption holding unit 114.
• the frame support unit 112 supports annular frames RI2 and RI3 that hold the sheet TE to which multiple chips CP are attached. Note that the frame support unit 112 may support only the annular frame RI2 or only the annular frame RI3.
• the chip supply unit 11 also has a frame drive unit 113 that drives the annular frames RI2 and RI3 in the XY directions or in a direction rotating around the Z axis.
• the frame support portion 112 holds the annular frames RI2 and RI3 in an orientation in which the surface of the sheet TE to which multiple chips CP are attached faces vertically upward (in the +Z direction).
• the pickup mechanism 111 cuts out at least one chip from among the multiple chips CP. Specifically, the pickup mechanism 111 pushes out the protrusion target portion of the sheet TE, to which the single chip CP to be protruded is attached, from the side of the sheet TE opposite the multiple chips CP, thereby protruding the single chip CP.
• the pickup mechanism 111 has pins 111a and is movable in the vertical direction as shown by arrow AR24 in Figure 4. There are, for example, four pins 111a. However, the number of pins 111a may be three, or five or more.
• the suction holding unit 114 suction-holds the outer periphery of the protrusion target portion of the sheet TE, which is protruded by the tip of the pin 111a.
• the chip transport device 39 transports the chip CP supplied from the chip supply unit 11 to a transfer position Pos1 where the chip CP is transferred to the head 33H of the bonding unit 33 of the chip bonding device 30.
• the chip transport device 39 has a long plate 391, a chip holding unit 393 provided at the tip of the plate 391, and a plate drive unit 392 that rotates the plates 391 in unison and moves them vertically.
• the plate 391 is in the shape of a long plate, and one end of the plate 391 rotates around the other end located between the chip supply unit 11 and the head 33H. Note that there may be multiple plates 391.
• the chip holding unit 393 When receiving the chip CP, the chip holding unit 393 is positioned opposite the chip CP protruded in the +Z direction by the pickup mechanism 111. The chip holder 393 then suction-holds the chip CP protruded in the +Z direction by the pickup mechanism 111. As shown in FIG. 1, the pickup mechanism 111 and head 33H are positioned in the Z-axis direction so as to overlap the trajectory OB1 traced by the tip of the chip holder 393 when the plate 391 rotates. When the chip transport device 39 receives the chip CP from the pickup mechanism 111, it rotates the plate 391 around the axis AX, as indicated by arrow AR12 in FIG. 1, to transport the chip CP to a transfer position Pos1 where it overlaps with the head 33H.
• the chip transport device 39 then moves the plate 391 in the -Z direction with the chip CP positioned at the transfer position Pos1, bringing the chip CP into contact with the tip of the head 33H and releasing its hold on the chip CP, thereby transferring the chip CP from the chip holder 393 to the head 33H.
• the chip bonding device 30 is a so-called chip mounter that temporarily bonds the chip CP onto the temporary substrate WTD, and includes a stage unit 31, a bonding section 33 having a head 33H, a head driver 36 that drives the head 33H, imaging sections 35a and 35b, and a laser sensor 51. As shown in FIG. 3, the chip bonding device 30 also includes a camera F direction driver 365 and a camera Z direction driver 363.
• the bonding section 33 has a Z-axis moving member 331, a first disk member 332, a piezo actuator 333, a second disk member 334, a mirror fixing member 336, a mirror 337, and a head 33H.
• the first disk member 332 is fixed to the upper end of the Z-axis moving member 331.
• the second disk member 334 is disposed above the first disk member 332.
• the first disk member 332 and the second disk member 334 are connected via the piezo actuator 333.
• the head 33H is fixed to the upper surface side of the second disk member 334.
• the head 33H adsorbs and holds the chip CP.
• the head 33H holds the chip CP from vertically below (-Z direction).
• the head 33H has a chip tool 411 and a head main body 413.
• the chip tool 411 is made of a material (e.g., silicon (Si)) that transmits imaging light (infrared light, etc.).
• the head main body 413 also has a built-in temperature adjustment unit 417 that adjusts the temperature of the chip CP held by the chip tool 411.
• the temperature adjustment unit 417 includes a ceramic heater, a coil heater, etc.
• the head main body 413 also has hollow sections 415 and 416 for transmitting (passing through) the imaging light.
• Each hollow section 415 and 416 is a transparent section that transmits imaging light and is arranged to penetrate the head main body 413 vertically (Z-axis direction).
• Each hollow section 415 and 416 has an elliptical shape when viewed from above, as shown in Figure 4.
• the two hollow portions 415, 416 are arranged point-symmetrically about the axis AX at diagonal corners of the head main body 413, which has a generally square shape in top view.
• Holes 334a, 334b are also provided in the second disk member 334 at portions corresponding to the hollow portions 415, 416 to allow imaging light to pass through. As shown in FIG.
• the tip tool 411 has a suction groove 411a provided in the tip tool 411 for suction-holding the periphery of the tip CP, a communication passage 411c communicating with the suction groove 411a, and a through-hole 411b through which a pressing portion 413b (described later) is inserted.
• the head main body 413 also has a suction portion 413d that suctions gas inside the suction groove 411a via the communication passage 411c, a pressing portion 413b that is vertically movable in the center, and a pressing drive portion 413c that drives the pressing portion 413b. Then, as shown in FIG.
• the chip bonding device 30 drives the pressing portion 413b in the vertical direction, as indicated by arrow AR25, while the peripheral portion of the chip CP is held by suction in the suction groove 411a.
• the chip CP bends, as indicated by arrow AR26, so that its center portion protrudes further toward the temporary substrate WTD than its peripheral portion.
• the piezo actuators 333 adjust at least one of the distance between the temporary bonding surface WTDf of the temporary substrate WTD and the bonding surface CPf of the chip CP, and the inclination of the chip CP relative to the temporary bonding surface WTDf of the temporary substrate WTD.
• three piezo actuators 333 are located between the first disk member 332 and the second disk member 334, and each is expandable and contractible in the Z direction. By controlling the degree of expansion and contraction of each of the three piezo actuators 333, the inclination angle of the second disk member 334, and therefore of the head 33H, relative to the horizontal plane is adjusted.
• At least one of the distance between the bonding surface CPf of the chip CP held by the head 33H and the temporary bonding surface WTDf of the temporary substrate WTD and the inclination of the bonding surface CPf of the chip CP held by the head 33H relative to the temporary bonding surface WTDf of the temporary substrate WTD is adjusted.
• the three piezo actuators 333 are positioned so as not to block the illumination light (including reflected light) for the imaging units 35a and 35b.
• the mirror 337 is fixed to the first disk member 332 via a mirror fixing member 336 and is disposed in the gap between the first disk member 332 and the second disk member 334.
• the mirror 337 has inclined surfaces 337a and 337b that are inclined diagonally downward at an angle of 45 degrees. Photographing light incident on the inclined surfaces 337a and 337b of the mirror 337 from the first imaging units 35a and 35b is reflected upward.
• the head driver 36 moves the head 33H holding the chip CP vertically upward (in the +Z direction), bringing the head 33H closer to the stage 315 and bringing the chip CP into contact with the temporary substrate WTD.
• the head driver 36 has a Z-direction driver 34, a rotating member 361, and a ⁇ -direction driver 37.
• the Z-direction driver 34 has a servo motor, a ball screw, and the like.
• the Z-direction driver 34 is provided on the lower end side of the rotating member 361 (described below), and drives the Z-axis moving member 331 of the bonding unit 33 in the Z-axis direction, as indicated by arrow AR21.
• the head 33H provided at the upper end of the bonding unit 33 moves in the Z direction accordingly.
• the head 33H is driven in the Z direction by the Z-direction driver 34.
• the rotating member 361 is cylindrical, and as shown in Figure 6B, the cross-section of its inner hollow portion is octagonal.
• the Z-axis moving member 331 has a rod-shaped portion with an octagonal cross-section, and is inserted inside the rotating member 361.
• linear guides 38 are provided between four of the eight side surfaces of the Z-axis moving member 331 and the inner surface of the rotating member 361, so that the Z-axis moving member 331 slides relative to the rotating member 361 in the Z-axis direction.
• the ⁇ -direction drive unit 37 has a servo motor, a reducer, etc., and is fixed to a fixed member (not shown) provided within the chip joining device 30, as shown in FIG. 3.
• the ⁇ -direction drive unit 37 supports the rotating member 361 so that it can rotate around the axis AX.
• the ⁇ -direction drive unit 37 then rotates the rotating member 361 around the rotation axis AX in response to a control signal input from the control unit 90.
• the imaging units 35a and 35b image the chip CP from vertically below the chip CP, i.e., from the -Z direction, when the chip CP is positioned at the position where the chip CP will be mounted on the temporary substrate WTD.
• the imaging unit 35a is fixed to the rotating member 361 via the camera Z direction drive unit 363 and the camera F direction drive unit 365.
• the imaging unit 35b is also fixed to the rotating member 361 via the camera Z direction drive unit 363 and the camera F direction drive unit 365. This causes the first imaging units 35a and 35b to rotate together with the rotating member 361.
• the mirror 337 is fixed to the Z-axis moving member 331, and the rotating member 361 and the Z-axis moving member 331 rotate in conjunction with each other. Therefore, the relative positional relationship between the imaging units 35a and 35b and the mirror 337 remains unchanged, and the imaging light reflected by the mirror 337 is guided to the imaging units 35a and 35b regardless of the rotation of the rotating member 361.
• the chip CP is provided with two alignment marks MC1a and MC1b, for example, as shown in FIG. 7A. Furthermore, at least one area AWD1 on the temporary substrate WTD to which the chip CP is temporarily bonded is each provided with two alignment marks MWD1a and MWD1b, for example, as shown in FIG. 7B.
• the imaging units 35a and 35b each acquire image data including images of the alignment marks MC1a and MC1b provided on the chip CP and images of alignment marks MWD1a and MWD1b (described below) provided on the temporary substrate WTD.
• the control unit 90 Based on the image data acquired by the imaging units 35a and 35b, the control unit 90 recognizes the relative position of each chip CP with respect to the temporary substrate WTD in a direction parallel to the temporary bonding surface WTDf to which the chip CP on the temporary substrate WTD is temporarily bonded.
• the imaging units 35a and 35b each include an image sensor 351a, 351b, an optical system 352a, 352b, and a coaxial illumination system (not shown).
• the imaging units 35a and 35b each acquire image data related to the reflected light of illumination light (e.g., infrared light) emitted from a light source (not shown) of the coaxial illumination system.
• illumination light e.g., infrared light
• the illumination light emitted horizontally from the coaxial illumination system of the imaging units 35a and 35b is reflected by the inclined surfaces 337a and 337b of the mirror 337, changing its direction of travel vertically upward.
• the light reflected by the mirror 337 then travels toward the imaging target area, which includes the chip CP held by the head 33H and the temporary substrate WTD arranged opposite the chip CP, and is reflected by each imaging target area.
• alignment marks MC1a and MC1b are provided in the imaging target portion of the chip CP
• alignment marks MWD1a and MWD1b are provided in the imaging target portion of the temporary substrate WTD.
• Reflected light from the imaging target portions of the chip CP and temporary substrate WTD travels vertically downward, then is reflected again by the inclined surfaces 337a and 337b of the mirror 337, where its direction of travel is changed to the horizontal direction, and reaches the imaging units 35a and 35b.
• the imaging units 35a and 35b acquire image data of the imaging target portions of the chip CP and temporary substrate WTD.
• the hollow portions 415 and 416 of the head 33H rotate around the axis AX in conjunction with the rotation of the rotating member 361. For example, as shown in FIG.
• the imaging units 35a and 35b when the imaging units 35a and 35b are positioned on a diagonal line connecting the two corners where the alignment marks MC1a and MC1b of the chip CP are provided, the imaging units 35a and 35b can acquire imaging data of the alignment marks MC1a and MC1b through the hollow portions 415 and 416.
• the imaging units 35a and 35b simultaneously capture images of the alignment marks MC1a and MC1b and the alignment marks MWD1a and MWD1b of the temporary substrate WTD, with the alignment marks MC1a and MC1b of the chip CP and the alignment marks MWD1a and MWD1b separated by a predetermined distance that falls within the depth of field of the imaging units 35a and 35b.
• the camera F-direction drive unit 365 adjusts the focal position of the imaging units 35a and 35b by driving the imaging units 35a and 35b in the focus direction, as shown by arrow AR23 in Figure 3.
• the camera Z-direction drive unit 363 drives the first imaging units 35a and 35b in the Z-axis direction, as shown by arrow AR4.
• the camera Z-direction drive unit 363 typically moves the imaging units 35a and 35b so that the amount of movement in the Z-axis direction of the Z-axis moving member 331 is the same as the amount of movement in the Z-axis direction of the imaging units 35a and 35b.
• the camera Z-direction drive unit 363 may move the imaging units 35a and 35b so that the amount of movement in the Z-axis direction of the imaging units 35a and 35b differs from the amount of movement in the Z-axis direction of the Z-axis moving member 331.
• the relative positions in the Z direction between the imaging units 35a and 35b and the mirror 337 change, and therefore the portions of the chip CP and temporary substrate WTD that are imaged by the imaging units 35a and 35b change.
• the stage unit 31 has a stage 315 that holds the temporary substrate WTD with the temporary bonding surface WTDf, where the chip CP is temporarily bonded, facing vertically downward, i.e., in the -Z direction.
• This stage 315 is formed into a plate-like shape from glass that is transparent to the laser light emitted from the laser sensor 51.
• the stage unit 31 also has an X-direction moving unit 311, a Y-direction moving unit 313, a stage 315, an X-direction driving unit 321, and a Y-direction driving unit 323.
• the X-direction moving unit 311 is fixed to a base member 302 fixed to the housing (not shown) of the chip bonding device 30 via two X-direction driving units 321.
• the two X-direction driving units 321 each extend in the X direction and are spaced apart in the Y direction.
• the X-direction driving unit 321 has a linear motor and a slide rail, and moves the X-direction moving unit 311 in the X direction relative to the fixed member 301.
• the Y-direction moving unit 313 is arranged below (in the -Z direction) the X-direction moving unit 311, via two Y-direction driving units 323.
• the two Y-direction driving units 323 each extend in the Y direction and are arranged spaced apart in the X direction.
• the Y-direction driving unit 323 has a linear motor and a slide rail, and moves the Y-direction moving unit 313 in the Y direction relative to the X-direction moving unit 311.
• the X-direction driving unit 321 and Y-direction driving unit 323 make up a stage driving unit that drives the stage 315 in the horizontal direction.
• the stage 315 is fixed to the Y-direction moving unit 313.
• the stage 315 moves in the X and Y directions in response to the movement of the X-direction driving unit 321 and the Y-direction driving unit 323.
• an opening 312 that is rectangular in plan view is provided in the center of the X-direction moving unit 311
• an opening 314 that is rectangular in plan view is provided in the center of the Y-direction moving unit 313.
• Laser sensor 51 is positioned vertically above stage 315, i.e., on the +Z side, and measures the distance between the surface on the -Z side of stage 315 and the surface on the +Z side of chip CP by irradiating laser light from the +Z side of stage 315 toward chip CP held by head 33H. As shown in FIG. 9, for example, with a dummy chip CPD held by head 33H, laser sensor 51 measures the distance between holding surface 315f that holds temporary substrate WTD on the -Z side of stage 315 and reflecting surface CPDf on the +Z side of dummy chip CPD held by head 33H.
• dummy chip CPD has regions TEG1, TEG2, and TEG3 made of metal arranged at three locations on reflecting surface CPDf, as shown in FIG. 10, for example.
• the laser sensor 51 measures the distances L11, L12, and L13 between the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD in the portions corresponding to the regions TEG1, TEG2, and TEG3.
• the activation processing device 60 performs an activation process to activate the temporary bonding surface WTf of the temporary substrate WTD, the bonding surface of the substrate W1, or the bonding surface CPf of the chip CP.
• the activation processing device 60 performs activation processing on annular frames RI2 and RI3 that hold the temporary substrate WTD, the substrate W1, or the sheet TE to which the chip CP is attached, set on a single processing surface without facing each other.
• the activation processing device 60 has a chamber 64, a support unit 62 that supports the temporary substrate WTD, the substrate W1, or the annular frames RI2 and RI3, a particle beam source 61, and a beam source transport unit 63.
• the chamber 64 is connected to a vacuum pump 652 via an exhaust pipe 651. When the vacuum pump 652 is activated, gas within the chamber 64 is exhausted to the outside of the chamber 64 through the exhaust pipe 651, reducing the air pressure within the chamber 64.
• the particle beam source 61 is, for example, a fast atom beam (FAB) source, and includes a discharge chamber 612, an electrode 611 disposed within the discharge chamber 612, a beam source driver 613, and a gas supply unit 614 that supplies Ar gas into the discharge chamber 612.
• the peripheral wall of the discharge chamber 612 is provided with an FAB outlet 612a that emits neutral atoms.
• the discharge chamber 612 is made of a carbon material.
• the discharge chamber 612 is shaped like a long box, with multiple FAB outlets 612a arranged in a straight line along its longitudinal direction.
• the beam source driver 613 includes a plasma generator (not shown) that generates Ar gas plasma within the discharge chamber 612, and a DC power supply (not shown) that applies a DC voltage between the electrode 611 and the peripheral wall of the discharge chamber 612. While generating a plasma of Ar gas in the discharge chamber 612, the beam source driver 613 applies a DC voltage between the peripheral wall of the discharge chamber 612 and the electrode 611. At this time, Ar ions in the plasma are attracted to the peripheral wall of the discharge chamber 612. As the Ar ions travel toward the FAB emission port 612a, they receive electrons from the peripheral wall of the discharge chamber 612, which is made of a carbon material and located on the outer periphery of the FAB emission port 612a, as they pass through the port.
• the beam source transport unit 63 has a long support rod 631 that is inserted through a hole 64a in the chamber 64 and supports the particle beam source 61 at one end, a support 632 that supports the support rod 631 at the other end, and a support driver 633 that drives the support 632.
• the beam source transport unit 63 also has a bellows 634 that is interposed between the outer periphery of the hole 64a in the chamber 64 and the support 632 to maintain the vacuum level within the chamber 64.
• the support driver 633 drives the support 632 in the direction that inserts and removes the support rod 631 into and from the chamber 64, as indicated by arrow AR31, thereby changing the position of the particle beam source 61 within the chamber 64, as indicated by arrow AR32.
• the beam source transport unit 63 moves the particle beam source 61 in a direction perpendicular to the arrangement direction of its multiple FAB emission ports 612a.
• the substrate bonding apparatus 20 includes a chamber 2200, a stage 2401, a head 2402, a stage driver 2403, a head driver 2404, a substrate heater 2420, and a position measurement unit 2500.
• the substrate bonding apparatus 20 also includes a distance measurement unit (not shown) that measures the distance between the stage 2401 and the head 2402.
• Chamber 2200 is connected to vacuum pump 2201 via exhaust pipe 2202C and exhaust valve 2203C.
• exhaust valve 2203C When exhaust valve 2203C is open and vacuum pump 2201 is operated, gas inside chamber 2200 is exhausted to the outside of chamber 2200 through exhaust pipe 2202C, reducing (depressurizing) the air pressure inside chamber 2200.
• the air pressure (degree of vacuum) inside chamber 2200 can also be adjusted by adjusting the amount of exhaust by varying the opening/closing amount of exhaust valve 2203C.
• a window 2503 is also provided in part of chamber 2200, which is used to measure the relative position between temporary substrate WTD and substrate W1 by position measurement unit 2500.
• the stage 2401 and head 2402 are arranged within the chamber 2200 so as to face each other in the Z direction.
• the stage 2401 supports the substrate W1 on its upper surface
• the head 2402 supports the temporary substrate WTD on its lower surface.
• the upper surface of the stage 2401 and the lower surface of the head 2402 may be roughened to allow for the temporary substrate WTD and substrate W1 to make contact with the stage 2401 and head 2402 with a mirror finish, making them less likely to peel off from the stage 2401 and head 2402. As shown in FIG.
• the stage 2401 and head 2402 have electrostatic chucks 2441, 2451, 2461, 2442, 2452, and 2462 that hold the substrate W1 and temporary substrate WTD, a first pressing mechanism 2431 that presses the center of the substrate W1, and a second pressing mechanism 2432 that presses the center of the temporary substrate WTD.
• Electrostatic chucks 2441, 2451, 2461, 2442, 2452, and 2462 have different diameters and are arranged concentrically. Substrate W1 and temporary substrate WTD are attracted to electrostatic chucks 2441, 2451, 2461, 2442, 2452, and 2462 provided on stage 2401 and head 2402, and are held on stage 2401 and head 2402.
• electrostatic chucks 2461 and 2462 face the centers of substrate W1 and temporary substrate WTD, respectively
• electrostatic chucks 2441, 2451, 2442, and 2452 face the peripheries of substrate W1 and temporary substrate WTD, respectively.
• Electrostatic chucks 2441, 2451, 2461, 2442, 2452, and 2462 can each be in a state where they are adsorbing substrate W1 and temporary substrate WTD, or in a state where they are not adsorbing.
• electrostatic chucks 2461 and 2462 which are located relatively inside stage 401 and head 402, can be in a state where they are not adsorbing
• electrostatic chucks 2441, 2451, 2442, and 2452 which are located relatively outside stage 401 and head 402 can be in a state where they are adsorbing.
• the first pressing mechanism 2431 is provided in the center of the stage 2401, and the second pressing mechanism 2432 is provided in the center of the head 2402.
• the first pressing mechanism 2431 has a first pressing part 2431a that can be retracted toward the head 2402, and a first pressing drive part 2431b that drives the first pressing part 2431a.
• the second pressing mechanism 2432 has a second pressing part 2432a that can be retracted toward the stage 2401, and a second pressing drive part 2432b that drives the second pressing part 2432a.
• the pressing drive units 2431b and 2432b may be configured to drive the first pressing unit 2431a and the second pressing unit 2432a by controlling the air pressure inside a cylinder into which a portion of the first pressing unit 2431a and the second pressing unit 2432a is fitted, for example.
• a voice coil motor may be used as the first pressing drive unit 2431b and the second pressing drive unit 2432b.
• the top portions of the first pressing unit 2431a and the second pressing unit 2432a that come into contact with the substrate W1 and the temporary substrate WTD have a dome-like shape.
• the first pressing unit 2431a and the second pressing unit 2432a perform either pressure control to maintain a constant pressure applied to the substrate W1 and the temporary substrate WTD, or position control to maintain a constant contact position of the substrate W1 and the temporary substrate WTD.
• the first pressing unit 2431a is position-controlled and the second pressing unit 2432a is pressure-controlled, thereby pressing the substrate W1 and temporary substrate WTD at a fixed position with a fixed pressure.
• the substrate heating section 2480 is composed of heaters 2481 and 2482.
• the heaters 2481 and 2482 are composed of, for example, electric heaters.
• the heaters 2481 and 2482 heat the substrate W1 and temporary substrate WTD supported by the stage 2401 and head 2402 by transferring heat to the substrate W1 and temporary substrate WTD.
• the temperature of the substrate W1, temporary substrate WTD, or their bonding surfaces can be adjusted by adjusting the heat generation amount of the heaters 2481 and 2482.
• the stage driver 2403 can move the stage 2401 in the X and Y directions and rotate it around the Z axis.
• the head drive unit 2404 has an elevation drive unit 2406 that raises and lowers the head 2402 vertically upward or downward (see arrow AR201), an XY direction drive unit 2405 that moves the head 2402 in the X and Y directions, and a rotation drive unit 2407 that rotates the head 2402 in a rotational direction around the Z axis (see arrow AR202).
• the head drive unit 2404 also has a piezo actuator 2411 that adjusts the tilt of the head 2402 relative to the stage 2401, and a second pressure sensor 2412 that measures the pressure applied to the head 2402.
• the XY-direction drive unit 2405 and the rotation drive unit 2407 move the head 2402 relative to the stage 2401 in the X direction, Y direction, and rotational direction around the Z axis, thereby enabling alignment between the substrate W1 held on the stage 2401 and the temporary substrate WTD held on the head 2402.
• the lifting/lowering drive unit 2406 moves the head 2402 downward, thereby bringing the stage 2401 and the head 2402 closer to each other.
• the lifting/lowering drive unit 2406 also moves the head 2402 upward, thereby separating the stage 2401 and the head 2402.
• the lifting/lowering drive unit 2406 moves the head 2402 downward, the substrate W1 held on the stage 2401 and the temporary substrate WTD held on the head 2402 come into contact.
• the lifting/lowering drive unit 2406 applies a driving force to the head 2402 in a direction that moves it closer to the stage 2401 while the substrate W1 and the temporary substrate WTD are in contact, the temporary substrate WTD is pressed against the substrate W1.
• the multiple piezoelectric actuators 2411 and multiple second pressure sensors 2412 are arranged between the head 2402 and the XY-direction drive unit 2405.
• the multiple piezoelectric actuators 2411 are fixed at three non-collinear positions on the top surface of the head 2402, and at multiple positions equally spaced around the periphery of the top surface of the head 2402, which is circular in plan view.
• the second pressure sensors 2412 each connect the upper end of the piezoelectric actuator 2411 to the lower surface of the XY-direction drive unit 2405.
• Each piezoelectric actuator 2411 can expand and contract in the vertical direction.
• the expansion and contraction of the multiple piezoelectric actuators 2411 fine-tunes the tilt of the head 2402 around the X-axis and Y-axis and the vertical position of the head 2402. Furthermore, the second pressure sensor 2412 measures the pressure applied at multiple positions on the underside of the head 2402. Then, by driving each of the multiple piezo actuators 2411 so that the pressures measured by the second pressure sensor 2412 are equal, the substrate W1 or the chip CP bonded to the substrate W1 can be brought into contact with the chip CP temporarily fixed to the temporary substrate WTD while maintaining the underside of the head 2402 parallel to the upper surface of the stage 2401.
• the distance measurement unit is composed of a laser rangefinder and measures the distance between stage 2401 and head 2402 without contacting stage 2401 or head 2402. Specifically, for example, if head 2402 is transparent, the distance measurement unit measures the distance between stage 2401 and head 2402 from the difference between the light reflected from the upper surface of stage 2401 and the light reflected from the lower surface of head 2402 when laser light is irradiated from above head 2402 toward stage 2401. The distance measurement unit measures the distance between multiple locations on the upper surface of stage 2401 and multiple locations on the lower surface of head 2402 that face the aforementioned multiple locations on stage 2401 in the Z direction.
• the position measurement unit 2500 measures the amount of misalignment between the substrate W1 and temporary substrate WT1 in directions perpendicular to the up-down direction, i.e., the XY direction and the rotational direction.
• the position measurement unit 2500 has multiple (two in FIG. 3) imaging units 2501 and 2502, and mirrors 2504 and 2505.
• the imaging units 2501 and 2502 each have an imaging element (not shown) and a coaxial illumination system.
• the light source for the coaxial illumination system of the imaging units 2501 and 2502 is a light source that emits light (e.g., infrared light) that passes through windows 2503 provided in the substrate W1, temporary substrate WTD, stage 2401, and chamber 2200.
• substrate bonding apparatus 20 first performs a rough alignment operation (rough alignment operation) of substrate W1 and temporary substrate WTD to face each other while recognizing the alignment marks MK1a, MK1b, MK2a, and MK2b provided on substrate W1 and temporary substrate WTD using position measurement unit 2500. Thereafter, with the substrate W1 and temporary substrate WTD facing each other, the substrate bonding apparatus 20 performs a more precise alignment operation (fine alignment operation) while simultaneously recognizing the alignment marks MK1a, MK2a, MK1b, and MK2b provided on the substrate W1 and temporary substrate WTD using the position measurement unit 2500.
• a rough alignment operation rough alignment operation
• MK1b fine alignment operation
• the imaging units 2501 and 2502 simultaneously capture images of the alignment marks MK1a, MK1b and the alignment marks MK2a and MK2b with the alignment marks MK1a, MK1b and the alignment marks MK2a and MK2b spaced a predetermined distance apart that falls within the depth of field of the imaging units 2501 and 2502.
• light emitted from a light source (not shown) of the coaxial illumination system of the imaging unit 2502 is reflected by the mirror 2505 and travels upward, passing through the window 2503 and part or all of the substrate W1 and temporary substrate WTD.
• Light that has passed through part or all of the substrate W1 and temporary substrate WTD is reflected by the alignment marks MK1b and MK2b on the substrate W1 and temporary substrate WTD, travels downward, passes through the window 2503, is reflected by the mirror 2505, and enters the image sensor of the image capturing unit 2502.
• the control unit 90 controls the chip supply device 10, substrate bonding device 20, chip transport device 39, chip bonding device 30, activation processing device 60, transport device 70, and cleaning device 85 separately.
• the control unit 90 has a CPU (Central Processing Unit), main memory, auxiliary memory, an interface, and a bus connecting each unit.
• the main memory is made up of volatile memory and is used as the working area of the CPU.
• the auxiliary memory is made up of non-volatile memory and stores programs executed by the CPU.
• the chip bonding control unit 901 acquires a captured image GAa including alignment marks MC1a and MWD1a between the chip CP and temporary substrate WTD, and a captured image GAb including alignment marks MC1b and MWD1b between the chip CP and temporary substrate WTD. Then, as shown in FIG. 16B, the chip bonding control unit 901 calculates the positional misalignment amounts ⁇ xa and ⁇ ya between a pair of alignment marks MC1a and MWD1a provided on the chip CP and substrate WT based on the captured image GAa acquired from the imaging unit 35a. Note that FIG.
• 16B shows a state in which a pair of alignment marks MC1a and MWD1a are misaligned from each other.
• the chip bonding control unit 901 calculates the misalignment amounts ⁇ xb and ⁇ yb between another set of alignment marks MC1b and MWD1b provided on the chip CP and substrate WT based on the captured image GAb acquired from the imaging unit 35b.
• the chip bonding control unit 901 then calculates the relative misalignment amounts ⁇ x, ⁇ y, and ⁇ between the chip CP and substrate WT in the X direction, Y direction, and rotational direction around the Z axis based on the misalignment amounts ⁇ xa, ⁇ ya, ⁇ xb, and ⁇ yb of these two sets of alignment marks and the geometric relationship between the two sets of marks.
• the chip bonding control unit 901 also moves the head 33H in the X direction and Y direction and rotates it around the Z axis so as to reduce the calculated misalignment amounts ⁇ x, ⁇ y, and ⁇ . This reduces the relative misalignment amounts ⁇ x, ⁇ y, and ⁇ between the chip CP and substrate WT.
• the chip bonding control unit 901 also has an attitude control unit 911, a horizontal movement control unit 912, and an elevation control unit 913.
• the attitude control unit 911 controls the attitude of the head 33H by outputting control signals to the ⁇ -direction drive unit 37 and the piezo actuator 333 via the interface.
• the horizontal movement control unit 912 controls the horizontal movement of the stage 315 by outputting control signals to the X-direction drive unit 321 and the Y-direction drive unit 323 via the interface.
• the elevation control unit 913 controls the elevation of the head 33H by outputting control signals to the Z-direction drive unit 34 via the interface.
• the auxiliary memory unit also has a parameter memory unit 931 that stores parameter information indicating parameters reflecting the attitude of the head 33H when the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD are parallel with each other while the dummy chip CPD is held by the head 33H.
• the parameters indicate, for example, the length of the piezoelectric element of each of the three piezoelectric actuators 333.
• the parameter memory unit 931 stores parameter information indicating parameters for each of a plurality of pre-set sub-areas SA1, SA2, ..., SA45 inside the area A1 where the substrate WT is held on the holding surface 315f of the stage 315, as shown in FIG. 18, for example.
• the parameter storage unit 931 stores parameter information indicating parameters for each of a plurality of sub-regions SA1, SA2, ..., SA45 in association with region identification information ID_SA1, ID_SA2, ..., ID_SA45 that identifies each sub-region SA1, SA2, ..., SA45.
• the sub-regions SA1, SA2, ..., SA45 do not need to include all of the planned chip bonding regions on the substrate WT to which chips CP are to be bonded.
• each sub-region may be set to correspond to one planned chip bonding region that represents each group of planned chip bonding regions, for each group of planned chip bonding regions.
• the 500 planned chip bonding regions may be divided into several groups, and a region corresponding to one planned chip bonding region that represents each of the divided groups may be set as a sub-region.
• the attitude control unit 911 then stores parameter information indicating parameters reflecting the attitude of the head 33H in a state where the attitude of the head 33H has been adjusted, in the parameter storage unit 931, in association with region identification information that identifies the corresponding sub-region. The attitude control unit 911 then repeats these processes for all of the plurality of sub-regions SA1, SA2, ..., SA45.
• the chip bonding device 30 first performs a parallel adjustment process in which, with the head 33H holding the tammy chip CPD, parameters indicating the attitude of the head 33H corresponding to each of the multiple sub-regions on the stage 315 are acquired and stored in a parameter memory unit. The chip bonding device 30 then uses the parameters stored in the parameter memory unit to adjust the attitude of the head 33H for each planned chip bonding region facing each of the multiple sub-regions, sequentially bonding the chip CP to the substrate WT.
• the substrate bonding control unit 902 acquires a captured image GAa including alignment marks MK1a and MK2a of the substrate W1 and temporary substrate WTD captured by the imaging unit 2501 of the position measurement unit 2500, and a captured image GAb including alignment marks MK1b and MK2b of the substrate W1 and temporary substrate WTD captured by the imaging unit 2502. Note that the operation of capturing image GAa by the imaging unit 2501 and the operation of capturing image GAb by the imaging unit 2502 are performed simultaneously.
• the bonding method performed by the bonding system 1 according to this embodiment will be described with reference to FIG. 21.
• this bonding method multiple layers of chips CP are stacked at multiple locations in the horizontal direction on the substrate W1.
• the process of bonding multiple chips CP temporarily bonded to the temporary substrate WTD to chips CP mounted on the substrate W1 is repeated, thereby stacking multiple layers of chips CP on the substrate W1.
• the stacking operation of the chips CP in each layer is similar. However, while the chips CP in the first layer are directly bonded to the substrate W1, in the stacking operation of the chips CP in the second layer and beyond, the chips CP are bonded to chips stacked on the substrate W1.
• the activation processing device 60 first performs an activation process to activate the mounting surface of the temporary substrate WTD, and then the cleaning device 85 performs a hydrophilization process to hydrophilize the mounting surface WTDf of the temporary substrate WTD by washing it with water. Furthermore, after the activation processing device 60 performs an activation process to activate multiple chips CP attached to the sheet TE, the cleaning device 85 performs a hydrophilization process to hydrophilize the bonding surfaces CPf of the chips CP by washing them with water (step S1).
• the activation processing device 60 prepares only one annular frame RI2, RI3 to hold the sheet TE to which multiple chips CP are attached, and irradiates a particle beam onto the chips CP attached to the sheet TE held by the prepared annular frame RI2, RI3. 22, the activation processing device 60 moves the particle beam source 61 in the X-axis direction while irradiating the bonding surfaces CPf of the chips CP with a particle beam as indicated by arrow AR35.
• the activation processing device 60 moves the particle beam source 61 in the +X direction to irradiate the bonding surfaces CPf of all chips CP attached to the tape TE with a particle beam, and then moves the particle beam source 61 in the -X direction to irradiate the bonding surfaces CPf of the chips CP with a particle beam.
• the angle (incident angle) ⁇ 1 between the particle beam irradiation axis J1 and the normal direction N1 of the virtual plane S1 is set to be between 30 degrees and 80 degrees. At this time, impurities generated from the chips CP or the sheet TE are blown away from the chips CP and do not return to the bonding surfaces CPf of the chips CP.
• the chip bonding device 30 temporarily bonds the multiple chips CP attached to the sheet TE one by one in order to the temporary substrate WTD (step S2).
• Methods for weakening the bonding force in the temporary bonding include a method of temporarily bonding the chips CP to the temporary substrate WTD by simply performing hydrophilization without performing the activation treatment by the activation treatment device 60, and a method of weakening the activation conditions in the activation treatment by the activation treatment device 60.
• hydrophilization methods include: a method of adhering water to the chip CP and the temporary substrate WTD by washing them with water; a method of increasing the humidity of the surface of the chip CP and the temporary substrate WTD by controlling the temperature of the chip CP and the temporary substrate WTD in the atmosphere to adsorb moisture; and a method of adhering water to the surface of the chip CP and the temporary bonding surface of the temporary substrate WTD by supplying water gas to the surface of the chip CP and the temporary bonding surface of the temporary substrate WTD in a chamber.
• a heat treatment process may be performed after the temporary bonding process of step S2. This can increase the strength of the temporary bonding of the chip CP to the temporary substrate WTD.
• the strength of the temporary bonding can be increased by performing an activation process before hydrophilization.
• the degree of activation in the activation process should be set to a level that allows the temporary substrate WTD to be smoothly separated from the chip CP in the subsequent process of separating the temporary substrate WTD from the chip CP.
• the strength of the temporary bond between the temporary substrate WTD and the chip CP is weakened, allowing the temporary substrate WTD to be smoothly separated from the chip CP.
• the chip bonding device 30 performs an attitude adjustment process to determine the attitude at each of multiple locations on the stage 315.
• the chip bonding apparatus 30 moves the stage 315 to a position where one of the multiple sub-regions on the stage 315 faces the head 33H (step S201).
• the multiple sub-regions SA1, SA2, ..., SA45 are each located inside the substrate holding region A1, in which the substrate WT is held, on the holding surface 351f of the stage 315.
• each of the sub-regions SA1, SA2, ..., SA45 is positioned opposite one of the multiple chip bonding regions to which the chip CP on the substrate WT is bonded.
• the chip bonding device 30 uses the laser sensor 51 to measure the distance between the portions of the reflecting surface CPDf of the dummy chip CPD that correspond to the three regions TEG1, TEG2, and TEG3 and the holding surface 315f on the -Z direction side of the stage 315 (step S202).
• the chip bonding device 30 then adjusts the attitude of the head 33H by controlling the degree of expansion and contraction of each of the three piezoelectric actuators 333 so that the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD are parallel (step S203).
• the chip bonding device 30 then acquires the parameters of each of the three piezoelectric actuators 333 when the attitude of the head 33H has been adjusted, and stores the parameter information indicating the acquired parameters in the parameter storage unit 931 in association with the corresponding region identification information (step S204).
• the chip bonding device 30 determines whether parameter information corresponding to all sub-areas SA1, SA2, ..., SA45 on the holding surface 315f of the stage 315 has been stored in the parameter memory unit 931 (step S205).
• the chip bonding device 30 determines that there are sub-areas SA1, SA2, ..., SA45 for which parameter information has not yet been stored in the parameter memory unit 931 (step S205: No).
• the chip bonding device 30 selects one of the sub-areas SA1, SA2, ..., SA45 for which parameter information has not yet been stored in the parameter memory unit 931, and moves the stage 315 to a position opposite the one sub-area SA1, SA2, ..., SA45 selected by the head 33H (step S201).
• the chip bonding device 30 transfers one chip CP to be temporarily bonded to the temporary substrate WTD to the head 33H (step S101).
• the chip bonding device 30 moves the stage 315 so that the temporary substrate WTD is positioned so that the planned chip bonding position of the chip CP on the temporary substrate WTD faces the head 33H (step S102).
• the chip bonding device 30 identifies, from the parameter information stored in the parameter storage unit 931, parameter information corresponding to the area identification information of the sub-area facing the planned chip bonding area facing the head 33H (step S103).
• the chip bonding device 30 adjusts the attitude of the head 33H by controlling the degree of expansion and contraction of the three piezo actuators 333 based on the parameters indicated by the identified parameter information (step S104).
• the chip bonding device 30 moves the head 33H in a direction approaching the stage 315 to bring the chip CP closer to the temporary substrate WTD (step S105).
• the chip bonding device 30 bends the chip CP as described below to bring the chip CP closer to the temporary substrate WTD so that the chip CP and temporary substrate WTD are close enough to come into contact with each other.
• the chip bonding device 30 calculates the relative positional misalignment between the chip CP and the temporary substrate WTD while they are not in contact with each other (step S106).
• the control unit 90 first acquires captured images GAa and GAb (see FIG. 16A) of the chip CP and temporary substrate WTD in a non-contact state from the imaging units 35a and 35b with the bonding surface WTf of the temporary substrate WTD facing the bonding surface CPf of the chip CP.
• the control unit 90 calculates the positional misalignment amounts ⁇ x, ⁇ y, and ⁇ of the chip CP and temporary substrate WTD in the X direction, Y direction, and rotational direction around the Z axis based on the two captured images GAa and GAb.
• control unit 90 calculates the misalignment amounts ⁇ xb and ⁇ yb using the vector correlation method based on the captured image GAb obtained by simultaneously reading the alignment marks MC1b and MWD1b spaced apart in the Z direction. The control unit 90 then calculates the misalignment amounts ⁇ x, ⁇ y, and ⁇ in the horizontal direction between the chip CP and the temporary substrate WTD based on the misalignment amounts ⁇ xa, ⁇ ya, ⁇ xb, and ⁇ yb.
• the chip bonding device 30 calculates the correction movement amount and correction movement direction when moving the chip CP relative to the temporary substrate WTD so as to eliminate the positional misalignment of the chip CP with respect to the temporary substrate WTD based on the calculated positional misalignment amounts ⁇ x, ⁇ y, and ⁇ (step S107).
• the chip bonding device 30 moves the chip CP by the calculated correction movement amount in the calculated correction movement direction while the chip CP and temporary substrate WT are not in contact with each other (step S108).
• the chip bonding device 30 bends the chip CP while the chip CP and temporary substrate WTD are spaced apart (step S109).
• the chip bonding device 30 bends the chip CP so that the center of the bonding surface of the chip CP protrudes toward the temporary substrate WTD relative to the periphery.
• the chip bonding device 30 presses the center of the chip CP toward the temporary substrate WTD using the tip of the pressing portion 413b, while the suction groove 411b at the tip of the head 33H is holding the periphery of the chip CP by suction. This causes the chip CP to bend so that the center of its bonding surface protrudes toward the temporary substrate WTD.
• the control unit 90 determines whether all of the calculated positional deviation amounts ⁇ x, ⁇ y, and ⁇ are less than or equal to the preset positional deviation amount thresholds ⁇ xth, ⁇ yth, and ⁇ th (step S112).
• the control unit 90 first compares the calculated positional deviation amounts ⁇ x, ⁇ y, and ⁇ with the positional deviation amount thresholds ⁇ xth, ⁇ yth, and ⁇ th stored in the auxiliary memory unit 703. Then, based on the comparison results, the control unit 90 determines whether all of the calculated positional deviation amounts ⁇ x, ⁇ y, and ⁇ are less than or equal to the corresponding positional deviation amount thresholds ⁇ xth, ⁇ yth, and ⁇ th.
• step S112 determines that any one of the calculated positional deviation amounts ⁇ x, ⁇ y, and ⁇ is greater than the preset positional deviation amount thresholds ⁇ xth, ⁇ yth, and ⁇ th (step S112: No).
• the substrate bonding apparatus 20 separates the bonding surface of the temporary substrate WTD from the bonding surface of the substrate W1 (step S113).
• the chip bonding apparatus 30 lowers the head 33H to widen the gap between the chip CP and the temporary substrate WTD, while moving the pressing portion 413b in a direction to embed it in the head 33H.
• the control unit 90 calculates the correction movement amounts for the substrates 301 and 302 to make all of the calculated positional misalignment amounts ⁇ x, ⁇ y, and ⁇ equal to or less than the positional misalignment amount thresholds ⁇ xth, ⁇ yth, and ⁇ th (step S114).
• the control unit 90 calculates the correction movement amount to move the substrates 301 and 302 by an amount corresponding to the difference between the positional misalignment amounts ⁇ x, ⁇ y, and ⁇ between the chip CP and the temporary substrate WTD when the chip CP is in contact with the temporary substrate WTD, and the positional misalignment amount between the chip CP and the temporary substrate WTD when the chip CP is not in contact with the temporary substrate WTD.
• the chip bonding device 30 performs alignment to correct the relative positional deviations ⁇ x, ⁇ y, and ⁇ between the chip CP and the temporary substrate WTD while the chip CP and the temporary substrate WTD are in a non-contact state, i.e., while the chip CP is freely movable horizontally relative to the temporary substrate WTD (step S115).
• the chip bonding device 30 moves the head 33H in the X direction, Y direction, and rotational direction around the Z axis by the correction movement amounts calculated in step S114.
• the chip bonding device 30 adjusts the relative position of the chip CP with respect to the temporary substrate WTD so that the positional deviation between the chip CP and the temporary substrate WTD is reduced.
• the chip bonding device 30 then performs the process of step S109 again.
• step S112 determines that all of the calculated positional deviation amounts ⁇ x, ⁇ y, and ⁇ are less than or equal to the preset positional deviation amount thresholds ⁇ xth, ⁇ yth, and ⁇ th (step S112: Yes).
• the chip bonding device 30 releases the suction grooves 411b of the head 33H from suctioning the peripheral portion of the chip CP, thereby bringing the entire bonding surface of the chip CP into contact with the temporary substrate WTD, thereby temporarily bonding the chip CP to the temporary substrate WTD (step S116). Then, after temporarily bonding the chip CP to the temporary substrate WT, the chip bonding device 30 moves the head 33H to the retracted position.
• the chip bonding apparatus 30 determines whether all chips CP have been bonded to the planned chip bonding areas on the temporary substrate WTD (step S117). If the chip bonding apparatus 30 determines that there are planned chip bonding areas to which a chip CP has not yet been temporarily bonded (step S117: No), it again holds one chip CP on the head 33H (step S101) and then executes step S102 and subsequent steps. On the other hand, if the chip bonding apparatus 30 determines that all chips CP have been temporarily bonded to the planned chip bonding areas on the temporary substrate WT (step S117: Yes), it ends the process of temporarily bonding the chips CP to the temporary substrate WTD. Thereafter, the temporary substrate WTD to which the chips CP have been temporarily bonded may be subjected to a heat treatment. Here, the heat treatment conditions can be appropriately adjusted to control the temporary bonding strength of the chips CP to the temporary substrate WTD.
• the transfer robot 71 receives the substrate WT1 from the activation treatment apparatus 60 after the activation treatment of the substrate W1 has been completed in the activation treatment apparatus 60, and transfers the received substrate W1 to the stage 2401 of the substrate bonding apparatus 20.
• the transfer robot 71 also receives the temporary substrate WTD to which multiple chips CP have been temporarily bonded from the chip bonding apparatus 30, and while holding the received temporary substrate WTD, flips it over and transfers it to the head 2402 of the substrate bonding apparatus 20.
• the substrate bonding apparatus 20 moves the head 2402 downward to bring the temporary substrate WTD closer to the substrate W1 (step S301).
• the substrate bonding apparatus 20 bends the temporary substrate WTD as described below, thereby bringing the temporary substrate WTD closer to the substrate W1 so that the temporary substrate WTD and the substrate W1 are close enough to come into contact with each other.
• control unit 90 then calculates the relative positional deviation amount of the temporary substrate WTD with respect to the substrate W1 (step S302).
• the control unit 90 first acquires captured images GAa and GAb (see FIG. 20A) of the temporary substrate WTD and the substrate W1 in a non-contact state from the first imaging unit 501 and the second imaging unit 502 of the position measurement unit 2500.
• the control unit 90 then calculates the positional deviation amounts ⁇ x, ⁇ y, and ⁇ of the temporary substrate WTD with respect to the substrate W1 in the X direction, the Y direction, and the rotational direction around the Z axis, respectively, based on the two captured images GAa and GAb.
• control unit 90 calculates the positional deviation amounts ⁇ xa and ⁇ ya (see FIG. 20B) using a vector correlation method based on the captured image GAa obtained by simultaneously reading alignment marks MK1a and MK2a spaced apart in the Z direction, for example. Similarly, based on a captured image GAb obtained by simultaneously reading alignment marks MK1b and MK2b spaced apart in the Z direction, the positional deviation amounts ⁇ xb and ⁇ yb (see FIG. 20B) are calculated using the vector correlation method.
• control unit 90 calculates the horizontal positional deviation amounts ⁇ x, ⁇ y, and ⁇ of the temporary substrate WTD relative to the substrate W1 based on the positional deviation amounts ⁇ xa, ⁇ ya, ⁇ xb, and ⁇ yb.
• the substrate bonding apparatus 20 performs alignment by moving the temporary substrate WTD relative to the substrate W1 so as to correct the calculated relative positional deviations ⁇ x, ⁇ y, and ⁇ of the temporary substrate WTD with respect to the substrate W1 (step S303).
• the substrate bonding apparatus 20 moves the head 2402 in the X direction, Y direction, and rotational direction around the Z axis so as to eliminate the positional deviations ⁇ x, ⁇ y, and ⁇ .
• the substrate bonding apparatus 20 bends the temporary substrate WTD while the temporary substrate WTD and the substrate W1 are separated from each other (step S304).
• the substrate bonding apparatus 20 bends the temporary substrate WTD so that the central portion of the bonding surface of the temporary substrate WTD protrudes toward the substrate W1 side relative to the periphery.
• the substrate bonding apparatus 20 attracts the temporary substrate WTD using the two electrostatic chucks 2442, 2452 on the periphery side of the stage 2401, while stopping the attraction of the temporary substrate WTD by the electrostatic chuck 2462 on the central side of the stage 2401.
• the substrate bonding apparatus 20 presses the central portion of the temporary substrate WTD toward the substrate W1 side using the second pressing portion 2432a.
• the temporary substrate WTD bends so that the central portion of its bonding surface protrudes toward the substrate W1 side.
• the substrate bonding apparatus 20 increases the protrusion amount of the second pressing portion 2432a of the head 2402, thereby bringing the center of the bonding surface of the temporary substrate WTD into contact with the center of the bonding surface of the substrate W1 (step S305).
• the control unit 90 determines whether all of the calculated positional deviation amounts ⁇ x, ⁇ y, and ⁇ are less than or equal to the preset positional deviation amount thresholds ⁇ xth, ⁇ yth, and ⁇ th (step S307).
• the control unit 90 first compares the calculated positional deviation amounts ⁇ x, ⁇ y, and ⁇ with the positional deviation amount thresholds ⁇ xth, ⁇ yth, and ⁇ th stored in the auxiliary memory unit 703. Then, based on the comparison results, the control unit 90 determines whether all of the calculated positional deviation amounts ⁇ x, ⁇ y, and ⁇ are less than or equal to the corresponding positional deviation amount thresholds ⁇ xth, ⁇ yth, and ⁇ th.
• step S307 suppose the control unit 90 determines that any one of the calculated positional deviation amounts ⁇ x, ⁇ y, and ⁇ is greater than the preset positional deviation amount thresholds ⁇ xth, ⁇ yth, and ⁇ th (step S307: No).
• the substrate bonding apparatus 20 separates the bonding surface of the temporary substrate WTD from the bonding surface of the substrate W1 (step S308).
• the substrate bonding apparatus 20 raises the head 2402 to widen the gap between the temporary substrate WTD and the substrate W1, while moving the second pressing unit 432a in a direction to embed it in the head 2402.
• the substrate bonding apparatus 20 controls the elevation of the head 2402 so that the tensile pressure on the temporary substrate WTD when peeling it from the substrate W1 remains constant.
• the substrate bonding apparatus 20 also resumes attraction of the temporary substrate WTD by the electrostatic chuck 2462b on the central side of the head 2402.
• the control unit 90 calculates the correction movement amounts of the substrates 301 and 302 to make all of the calculated positional deviation amounts ⁇ x, ⁇ y, and ⁇ equal to or less than the positional deviation amount thresholds ⁇ xth, ⁇ yth, and ⁇ th (step S309).
• the control unit 90 calculates the correction movement amount to move the substrates 301 and 302 by an amount corresponding to the difference between the positional deviation amounts ⁇ x, ⁇ y, and ⁇ between the temporary substrate WTD and the substrate W1 when the temporary substrate WTD is in contact with the substrate W1, and the positional deviation amount between the temporary substrate WTD and the substrate W1 when the temporary substrate WTD is not in contact with the substrate W1.
• the substrate bonding apparatus 20 performs alignment to correct the relative positional misalignment amounts ⁇ x, ⁇ y, and ⁇ between the temporary substrate WTD and the substrate W1 while the temporary substrate WTD and the substrate W1 are not in contact with each other, i.e., while the temporary substrate WTD is freely movable horizontally relative to the substrate W1 (step S310).
• the substrate bonding apparatus 20 moves the head 2402 in the X direction, Y direction, and rotational direction around the Z axis by the correction movement amounts calculated in step S309, while the stage 2401 is fixed.
• the substrate bonding apparatus 20 adjusts the relative position of the temporary substrate WTD with respect to the substrate W1 so as to reduce the positional misalignment amount between the temporary substrate WTD and the substrate W1, while the chip CP temporarily bonded to the temporary substrate WTD is spaced apart from the substrate W1.
• the substrate bonding apparatus 20 then performs the process of step S304 again.
• step S307 Yes.
• the substrate bonding apparatus 20 releases the electrostatic chucks 2442 and 2452 from adsorption of the peripheral portion of the temporary substrate WTD (step S311).
• step S311 As a result, as shown in FIG. 26B, all of the chips CP temporarily bonded to the temporary substrate WTD come into contact with the substrate W1.
• the substrate bonding apparatus 20 then presses the chips CP temporarily bonded to the temporary substrate WTD against the substrate W1 with all of the bonding surfaces CPf of the chips CP temporarily bonded to the temporary substrate WTD in contact with the bonding surfaces of the substrate W1, thereby permanently bonding the chips CP temporarily bonded to the temporary substrate WTD to the substrate W1 (step S312).
• the substrate bonding apparatus 20 then lifts the head 2402 while the substrate W1 is held by suction on the stage 2401, thereby separating the temporary substrate WTD from the chip CP (step S4).
• the substrate bonding apparatus 20 gradually increases the distance from the substrate W1 from the periphery of the temporary substrate WTD toward the center, thereby separating the temporary substrate WTD from the substrate W1.
• the substrate bonding apparatus 20 gradually separates the temporary substrate WTD from the periphery of the substrate W1, for example, by inserting a blade between the periphery of the temporary substrate WTD and the periphery of the substrate W1 and then moving the blade in a direction away from the substrate W1.
• gas may be ejected between the temporary substrate WTD and the substrate W1 to facilitate separation of the temporary substrate WTD from the substrate W1. Then, while the chip CP remains bonded to the substrate W1, the temporary substrate WTD is released from the chip CP as shown in FIG. 27A .
• the activation processing device 60 again performs an activation process to activate the mounting surface of the temporary substrate WTD, and then the cleaning device 85 performs a hydrophilization process to make the mounting surface WTDf hydrophilic by washing it with water. Also, after the activation processing device 60 performs an activation process to activate the multiple chips CP attached to the sheet TE, the cleaning device 85 performs a hydrophilization process to make the bonding surfaces CPf of the chips CP hydrophilic by washing them with water (step S5).
• the chip bonding device 30 temporarily bonds the multiple chips CP attached to the sheet TE one by one in order to the temporary substrate WTD (step S6).
• the substrate bonding apparatus 20 performs a step of bonding the multiple chips CP temporarily bonded to the temporary substrate WTD in a stacked manner to the chips CP bonded to the substrate W1 (step S7).
• the substrate bonding apparatus 20 brings the temporary substrate WTD close to the substrate W1 with the bonding surface of the temporary substrate WTD to which the chips CP are temporarily bonded facing the substrate W1 to which the chips CP are bonded.
• the substrate bonding apparatus 20 brings the chips CP temporarily bonded to the temporary substrate WTD into contact with the chips CP bonded to the substrate W1, and then bonds them.
• the substrate bonding apparatus 20 then lifts the head 2402 while the substrate W1 is held by suction on the stage 2401, thereby peeling the temporary substrate WTD from the chip CP (step S8).
• the substrate bonding apparatus 20 peels the temporary substrate WTD from the substrate W1 by gradually increasing the distance from the substrate W1 from the periphery of the temporary substrate WTD toward the center.
• the substrate bonding apparatus 20 sequentially peels the temporary substrate WTD from the periphery of the substrate W1, for example, by inserting a blade between the periphery of the temporary substrate WTD and the periphery of the substrate W1 and then moving the blade in a direction away from the substrate W1.
• gas may be ejected between the temporary substrate WTD and the substrate W1 to facilitate peeling of the temporary substrate WTD from the substrate W1. Then, while the chip CP remains bonded in a stacked state to the chip CP bonded to the substrate W1, the temporary substrate WTD is detached from the chip CP, as shown in FIG. 28B.
• step S9 determines whether or not a preset number of N layers of chips CP (N is an integer equal to or greater than 2) have been stacked.
• N is an integer equal to or greater than 2
• step S9: No the processing of step S5 is executed again.
• step S9: Yes the processing ends.
• FIGS 29A and 29B are diagrams showing the changes in the Z-axis length of each of the three piezoelectric actuators when bonding multiple chips CP to the substrate W1 using a bonding apparatus according to the comparative example and the chip bonding apparatus 30 according to this embodiment, respectively.
• Figure 29A it can be seen that the Z-axis length of the piezoelectric element of each of the three piezoelectric actuators 333 for each chip CP expands and contracts relatively significantly.
• the bonding system 1 can bond chips to substrates with high positional accuracy.
• the chips CP are bonded to the substrate W1 one by one, which inevitably requires a long time to bond all of the chips CP to the substrate W1. For example, to bond all 3,600 chips CP to a single substrate W1 in one hour, it would take one second per chip to bond them to the substrate W1. For this reason, it is not realistic to adopt a method in which the chips CP are activated one by one under reduced pressure before bonding them to the substrate W1.
• the process of temporarily bonding the chips CP to the temporary substrate WTD in the so-called chip-on-wafer bonding method can be performed in the atmosphere by employing hydrophilic bonding, and the process can be completed in one second per chip.
• the so-called wafer-on-wafer bonding method allows the process of permanently bonding at least one chip CP temporarily bonded to the temporary substrate WTD to the substrate W1 all at once to be performed over a period of approximately one hour after performing an activation process under reduced pressure.
• bonding methods that bond chips CP to substrate W1 via solder or the like i.e., bonding methods that involve heating and melting, which require raising and lowering the temperature of the chips CP, are difficult to adopt because the bonding process takes a long time.
• chips CP can be bonded to substrate W1 using a bonding method that involves heating and melting in a relatively short time.
• chips are mounted face-up on a resin-coated substrate, and chips of different heights are leveled and the resin hardened to align the bonding surfaces, or bumps are formed later to align the bonding surfaces.
• the substrates are peeled off (debonded) by ultraviolet light or heat, and the chips are returned to their chip state and stacked.
• the bonding surface of the chip temporarily fixed to the resin-coated substrate would be contaminated with resin, making it impossible to perform activation processing on the chip.
• the bonding method of this embodiment uses only water to temporarily bond the chip CP to the temporary substrate WTD, and can ensure that there is almost no water present in the temporarily bonded state. Therefore, even if activation processing is performed on the bonding surface of the chip CP temporarily bonded to the temporary substrate WTD, the bonding surface of the chip CP will not be contaminated.
• the bonding method according to this embodiment the chip CP is temporarily fixed to the temporary substrate WTD using hydrophilic bonding, which intentionally reduces bonding strength, and then the temporary substrate WTD and substrate W1 are bonded together. After that, the temporary substrate WTD is repeatedly peeled off from the chip CP, and the chip CP is stacked.
• the temporary substrate WTD is bent so that its central portion protrudes toward the substrate W1 compared to its peripheral portion before being brought into contact with the substrate W1.
• the distance between the peripheral portion of the temporary substrate WTD and the peripheral portion of the substrate W1 is then reduced, thereby bonding the chips CP temporarily fixed to the temporary substrate WTD and the chips CP bonded to the substrate W1.
• a parallelism adjustment process using dummy chips CPD is performed in advance, and parameter information indicating parameters reflecting the attitude of the head 33H that can offset the tilt of the stage 315 at each position where the stage 315 is placed is stored in the parameter storage unit 931.
• the attitude of the head 33H is adjusted based on the parameter information stored in the parameter storage unit 931 while bonding the chip CP to the substrate WT. Therefore, even if the tilt of the stage 315 changes depending on the position where the stage 315 is placed, the chip CP can be bonded to the substrate WT with high positional accuracy.
• a substrate bonding apparatus 2020 may be configured without a chamber 2200. Note that in FIG. 30, components similar to those in the embodiments are assigned the same reference numerals as in FIG. 12.
• the substrate bonding apparatus 2020 bonds a temporary substrate WTD to a substrate W1 in the atmosphere.
• the stage unit 3031 may include a plurality of piezo actuators 3316 that are fixed to the Y-direction moving section 313 on the +Z direction side and hold the stage 315 at the end on the -Z direction side.
• the stage unit 3031 may include a plurality of piezo actuators 3316 that are fixed to the Y-direction moving section 313 on the +Z direction side and hold the stage 315 at the end on the -Z direction side.
• the chip bonding control unit 3901 of the control unit has an attitude control unit 3911, a horizontal movement control unit 912, and an elevation control unit 913.
• the attitude control unit 3911 controls not only the attitude of the head 33H but also that of the stage 315 by outputting control signals via the interface to the ⁇ -direction drive unit 37, the piezo actuator 333, and the piezo actuator 3316 of the stage unit 3031.
• the horizontal movement control unit 912 controls the horizontal movement of the stage 315 by outputting control signals via the interface to the X-direction drive unit 321 and the Y-direction drive unit 323.
• the elevation control unit 913 controls the elevation of the head 33H by outputting control signals via the interface to the Z-direction drive unit 34.
• the auxiliary memory unit also has a parameter memory unit 931 that stores parameter information indicating parameters reflecting the attitude of the stage 315 when the holding surface 315f of the stage 315 and the reflecting surface CPDf of the dummy chip CPD are parallel with each other while the dummy chip CPD is held by the head 33H.
• the parameters indicate, for example, the length of the piezoelectric element of each of the multiple piezoelectric actuators 3316 that hold the stage 315.
• the parameter memory unit 931 stores parameter information indicating the parameters of the piezoelectric actuators 3316 in each of multiple pre-set sub-areas SA1, SA2, ..., SA45 inside the area A1 where the substrate WT is held on the holding surface 315f of the stage 315.
• the horizontal movement control unit 912 controls the X-direction drive unit 321 and the Y-direction drive unit 323 so that, with the dummy chip CPD held by the head 33H, one of a plurality of pre-defined sub-regions SA1, SA2, ..., SA45 inside the region where the substrate WT is held on the stage 315 shown in FIG. 19 is positioned opposite the head 33H.
• the attitude control unit 3911 controls the plurality of piezo actuators 3316 to adjust the attitude of the stage 315 so that the dummy chip CPD is parallel to the holding surface of the stage 315.
• the attitude control unit 3911 stores parameter information indicating parameters reflecting the attitude of the stage 315 in a state where the attitude of the stage 315 has been adjusted, in the parameter storage unit 931, in association with region identification information that identifies the corresponding sub-region. Then, the attitude control unit 3911 repeatedly performs these processes for all of the plurality of sub-regions SA1, SA2, ..., SA45.
• the chip bonding device first performs a parallel adjustment process in which, with the dummy chip CPD held by the head 33H, parameters indicating the attitude of the stage 315 corresponding to each of the multiple sub-regions on the stage 315 are acquired and stored in a parameter storage unit. The chip bonding device then uses the parameters stored in the parameter storage unit to adjust the attitude of the stage 315 for each planned chip bonding region facing each of the multiple sub-regions, while sequentially bonding the chips CP to the substrate WT.
• the chip bonding apparatus moves the stage 315 to a position where one of the multiple sub-regions on the stage 315 faces the head 33H (step S201).
• the chip bonding apparatus uses the laser sensor 51 to measure the distance between the portions of the reflecting surface CPDf of the dummy chip CPD corresponding to the three regions TEG1, TEG2, and TEG3 and the holding surface 315f on the -Z direction side of the stage 315 (step S202).
• the attitude of chip CP tilts accordingly relative to the optical axis of imaging units 35a and 35b.
• the reflected light from chip CP changes, which may affect the captured image.
• the attitude of chip CP can be maintained constant relative to the optical axis of imaging units 35a and 35b.
• a lifting mechanism 4316 as shown in Figure 34 may be provided.
• This lifting mechanism 4316 has a plurality of roller units 4317 arranged at multiple locations around the periphery of the stage 315, a lifting unit 4318 that raises and lowers each of the roller units 4317, and a guide member 4319 that guides the stage 315 so that it moves vertically.
• the roller unit 4317 has an arm 43172 that extends from the periphery of the stage 315 in the -Z direction, and a roller 43171 that is rotatably held at the tip of the arm 43172.
• the lifting unit 4318 has a wedge-shaped transmission member 43181 with an inclined surface 43181a against which the roller 43171 abuts vertically upward, and a servo motor 43182 fixed to a base member 43183 and sliding the transmission member 43181 in the direction indicated by arrow AR401 along the vertical upper surface 43183a of the base member 43183.
• a servo motor 43182 slides the transmission member 43181 in the direction indicated by arrow AR401, the roller 43171 rolls on the inclined surface 43181a of the transmission member 43181 as indicated by arrow AR402. This causes the stage 315 to rise and fall as indicated by arrow AR403.
• the imaging units 35a, 35b and mirror 337 may be arranged on the side of the stage 315 opposite the head 33H side.
• the imaging units 35a, 35b are cameras that use infrared light and capture images of the alignment marks using light that passes through the temporary substrate WTD and is reflected by the chip CP.
• the imaging units 35a, 35b simultaneously capture images of the alignment marks MC1a, MC1b and the alignment marks MWD1a, MWD1b, for example, with the alignment marks MC1a, MC1b of the chip CP and the alignment marks MWD1a, MWD1b of the temporary substrate WTD separated by a predetermined distance that falls within the depth of field of the imaging units 35a, 35b.
• the bonding system may include a pre-alignment device that performs a rough alignment operation of the temporary substrate WTD while recognizing alignment marks MK1a, MK1b, MK2a, and MK2b provided on the temporary substrate WTD before transporting the temporary substrate WTD to the chip bonding device 30.
• the temporary substrate WTD may have, on one surface in the thickness direction thereof, multiple hydrophilic regions on which chips CP are placed, and hydrophobic regions surrounding the multiple hydrophilic regions.
• the surface of the chip CP that is temporarily fixed to the temporary substrate WTD is also hydrophilic.
• the planar shape of the hydrophilic region is set to be approximately the same as the planar shape of the chip CP.
• the temporary substrate WTD is rocked, thereby utilizing the self-alignment effect of the water droplets attached to the hydrophilic regions to position the chips CP placed on the temporary substrate WTD in the hydrophilic regions.
• the temporary substrate WTD may be brought close to the substrate W1, and each chip CP may be bonded to the substrate W1.
• the temporary substrate WTD is brought close to the substrate W1 in this state, there is a risk that the orientation of the chips CP may shift. Therefore, it is preferable to perform a heat treatment to remove excess moisture while multiple chips CP are temporarily fixed to the temporary substrate WTD, thereby temporarily fixing the chips CP to the temporary substrate WTD relatively firmly.
• This configuration eliminates the need to temporarily bond multiple chips CP to the temporary substrate WTD one by one, as in the temporary bonding process described in the embodiment, and multiple chips CP can be temporarily fixed to the temporary substrate WTD in a single process. This reduces takt time and improves processing efficiency.
• the temporary substrate WTD to which the chip CP is temporarily bonded may be exposed to an environment in which a predetermined concentration of water molecules is present, and the chip CP may be peeled off from the temporary substrate WTD.
• the concentration is preferably 70% or more, more preferably 80% or more, or 90% or more.
• this phenomenon is utilized to weaken the bonding strength of the chip CP to the temporary substrate WTD when peeling the temporary substrate WTD from the substrate W1. This can be done by ejecting a gas containing a large amount of moisture between the chip CP and the temporary substrate WTD, increasing the humidity between the temporary substrate WTD and the chip CP by lowering the temperature of the temporary substrate WTD or the chip CP, or by supplying water between the chip CP and the temporary substrate WTD.
• hydrophilic bonding to the temporary bonding of the chip CP to the temporary substrate WTD makes it easy to adjust the bonding strength of the chip CP to the temporary substrate WTD and also makes it easier to peel the temporary substrate WTD from the chip CP. For this reason, the method of temporarily bonding the chip CP to the temporary substrate WTD by hydrophilic bonding is a very effective method.
• the parallelism adjustment process is performed using a dummy chip CPD, but this is not limited to this.
• the parallelism adjustment process may be performed using a normal chip CP instead of the dummy chip CPD.
• the parallelism adjustment process may be performed without holding a dummy chip CPD, normal chip CP, etc. on the head 33H.
• the parallelism adjustment process is performed without holding a substrate WT on the stage 315, but this is not limited to this, and the parallelism adjustment process may be performed with a transparent substrate WT held on the stage 315.
• the laser sensor 51 arranged on the +Z side of the stage 315 measures the distance between the surface on the -Z side of the stage 315 and the surface on the +Z side of the chip CP.
• this is not limited to this, and if at least one of the stage 315 and the temporary substrate WTD held by the stage 315 is not transparent, the distance between the surface on the -Z side of the stage 315 or temporary substrate WTD and the laser sensor and the distance between the surface on the +Z side of the chip CP and the laser sensor may be measured separately to estimate the distance between the surface on the -Z side of the stage 315 or temporary substrate WTD and the surface on the +Z side of the chip CP.
• the chip bonding device may have an optical path conversion member having a prism, mirror, or the like that can be arranged between the stage 315 and the head 33H, and a laser sensor 51 arranged to the side of the optical path conversion member, and may separately measure the distance from the -Z direction surface of the stage 315 or the -Z direction surface of the temporary substrate WTD held on the stage 315 to the laser sensor via the optical path conversion member, and the distance from the +Z direction surface of the chip CP to the laser sensor via the optical path conversion member, to estimate the distance between the -Z direction surface of the stage 315 or the temporary substrate WTD and the +Z direction surface of the chip CP. Also, as shown in FIG.
• the optical path conversion member 5052 may be provided with a transparent reflective surface 5052a facing the stage 315 and a transparent reflective surface 5052b facing the head 33H.
• the chip bonding device can use the laser sensor 5051 to separately measure the distance between the -Z direction surface of the stage 315 or the -Z direction surface of the temporary substrate WTD held on the stage 315 and the reflecting surface 5052a of the optical path conversion member 5052, and the distance between the +Z direction surface of the chip CP and the reflecting surface 5052b.
• the chip bonding device may have a laser sensor provided on the head 33H and a laser sensor provided on the stage 315, and may use the laser sensor provided on the head 33H to measure the distance between the laser sensor and the surface on the -Z direction side of the stage 315 or temporary substrate WTD, and use the laser sensor provided on the stage 315 to measure the distance between the laser sensor and the surface on the +Z direction side of the chip CP, thereby estimating the distance between the surface on the -Z direction side of the stage 315 or temporary substrate WTD and the surface on the +Z direction side of the chip CP.
• the chip bonding device 30 temporarily bonds the chip CP to the temporary substrate WTD from the vertically lower side of the temporary substrate WTD, i.e., from the -Z direction side.
• the chip bonding device may temporarily bond the chip CP to the temporary substrate WTD from the vertically upper side of the temporary substrate WTD, i.e., from the +Z direction side.
• so-called hydrophilic bonding may be used as the main bonding method between the substrate W1 and at least one chip CP temporarily bonded to the temporary substrate WTD.
• a bonding method using solder or the like may be used.
• the substrate W1 to which the chip CP has been permanently bonded may be subjected to a heat treatment.
• the bonding strength of the chip CP to the substrate W1 can be controlled by appropriately adjusting the heat treatment conditions. For example, by performing heat treatment at 200°C for two hours, the bonding strength of the chip CP to the substrate W1 can be increased.
• the temporary bonding strength between the temporary substrate WTD and the chip CP can be relatively weak, even when heat treatment is performed under the same conditions, while the bonding strength between the substrate W1 and the chip CP can be increased.
• the present invention is suitable for manufacturing, for example, CMOS image sensors, memories, computing elements, and MEMS.
• Bonding system 10: Chip supply device, 20: Substrate bonding device, 30: Chip bonding device, 33: Bonding unit, 33H, 2402: Head, 34: Z-direction drive unit, 35a, 35b, 2501, 2502: Imaging unit, 36, 2404: Head drive unit, 37: ⁇ -direction drive unit, 38: Linear guide, 39: Chip transport device, 51: Laser sensor, 60: Activation processing device, 70: Transport device, 80: Load/unload unit, 85: Cleaning device, 90: Control unit, 311: X-direction movement unit, 312, 314: Opening, 313: Y-direction movement unit, 315, 2401: Stage, 321: X-direction drive unit, 323: Y-direction drive unit, 331: Z-axis direction movement member, 332: First disc member, 333, 3316: Piezoelectric actuator, 334: Second circular Plate member, 334a, 334b: holes, 336: mirror fixing member, 337: mirror, 3

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