WO2025119136A1 - 发光装置及其制备方法、激光投影设备 - Google Patents

发光装置及其制备方法、激光投影设备 Download PDF

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Publication number
WO2025119136A1
WO2025119136A1 PCT/CN2024/136111 CN2024136111W WO2025119136A1 WO 2025119136 A1 WO2025119136 A1 WO 2025119136A1 CN 2024136111 W CN2024136111 W CN 2024136111W WO 2025119136 A1 WO2025119136 A1 WO 2025119136A1
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WO
WIPO (PCT)
Prior art keywords
light
pads
tube shell
laser
laser chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/136111
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English (en)
French (fr)
Inventor
段崇垚
周子楠
张明龙
韩旭
田有良
郭照师
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Hisense Laser Display Co Ltd
Original Assignee
Qingdao Hisense Laser Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202311683844.6A external-priority patent/CN120127493A/zh
Priority claimed from CN202410089831.4A external-priority patent/CN120357261A/zh
Application filed by Qingdao Hisense Laser Display Co Ltd filed Critical Qingdao Hisense Laser Display Co Ltd
Publication of WO2025119136A1 publication Critical patent/WO2025119136A1/zh
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding

Definitions

  • the present disclosure relates to the field of laser technology, and in particular to a light-emitting device and a preparation method thereof, and a laser projection device.
  • Some embodiments of the present disclosure provide a light-emitting device and a method for preparing the same, as well as a laser device, for solving the problem that the number of laser chips in use is limited by the driving circuit. While increasing the power used by the laser chip, the number of driving circuits can remain unchanged, which can effectively improve the working efficiency of the driving circuit and reduce costs.
  • a light-emitting device in one aspect, includes a substrate and a light-emitting component.
  • the substrate includes a substrate body, at least one connection pattern, a plurality of interconnection regions, and a plurality of first pads.
  • the at least one connection pattern is provided on the substrate body and includes a conductive portion.
  • the plurality of interconnection regions are provided on the substrate body.
  • the plurality of first pads are provided on the substrate body, and the plurality of first pads are electrically connected to the conductive portion through the plurality of interconnection regions, and any one of the plurality of first pads includes two first pads with different polarities.
  • the light-emitting component is fixed on the at least one connection pattern and includes at least one tube shell, a conductive structure, a routing wire, and a plurality of laser chips.
  • a first routing wire is provided on at least one of the side walls or the bottom wall of the at least one tube shell.
  • the conductive structure is provided on a side of the at least one tube shell facing the substrate and is electrically connected to the first routing wire and the conductive portion.
  • the plurality of laser chips are provided in the at least one tube shell and are electrically connected to the first routing wire, and the plurality of laser chips emit at least two different color lasers. Among the plurality of laser chips, the same laser chip is electrically connected to any one of the first pads.
  • the light-emitting device of some embodiments of the present disclosure includes a substrate and a light-emitting component, the light-emitting component is fixed on the connection pattern of the substrate, and any laser chip is electrically connected to the corresponding two first pads through the first wiring, the conductive structure, the conductive part and the interconnection area.
  • any laser chip is electrically connected to the corresponding two first pads through the first wiring, the conductive structure, the conductive part and the interconnection area.
  • the laser projection device includes a light source assembly, an optical modulation assembly, and a lens.
  • the light source assembly is configured to emit an illumination beam; the light source assembly includes the light emitting device; the optical modulation assembly is configured to modulate the illumination beam provided by the light source assembly to obtain a projection beam; and the lens is configured to image the projection beam.
  • the laser projection equipment of some embodiments of the present disclosure includes the above-mentioned light-emitting device, which can realize separate power supply for laser chips with different light emission colors, thereby solving the problem that the number of laser chips used is limited by the number and cost of driving circuits, so that when the number of laser chips is increased, the number of driving circuits remains unchanged, effectively improving the working efficiency of the driving circuit and reducing costs.
  • the light-emitting device includes a substrate, a light-emitting component, and the light-emitting component includes a laser chip, a first accommodating structure, a cover plate, and a plurality of first sealing parts.
  • the method includes: providing the laser chip, the first accommodating structure, the cover plate, and the plurality of first sealing parts; arranging the laser chip in the first accommodating structure; arranging the plurality of first sealing parts on the side of the cover plate facing the first accommodating structure; arranging two adjacent first sealing parts among the plurality of first sealing parts at intervals; connecting the first accommodating structure and the cover plate through the plurality of first sealing parts, so that any two adjacent first sealing parts are in contact with each other to connect the first accommodating structure and the cover plate, so as to close the gap at the connection between the first accommodating structure and the cover plate, and form the light-emitting component; electrically connecting the light-emitting component to the substrate.
  • a method for preparing a light-emitting device wherein a first accommodating structure and a cover plate are sealed by a plurality of mutually separated first sealing parts, thereby achieving the purpose of sealing a laser chip in a tube shell, so that the laser chip is isolated from the outside world. In this way, overflow of the first sealing part can be reduced, thereby avoiding or reducing holes, and reducing the impact on the laser chip.
  • a light-emitting device is provided. The light-emitting device is prepared by the method.
  • FIG3 is a schematic diagram of a laser projection device projecting an image according to some embodiments.
  • FIG4 is a schematic diagram of the operation of a micro reflective lens according to some embodiments.
  • FIG5 is a structural diagram of a light emitting device in the related art
  • FIG6 is another structural diagram of a light emitting device in the related art.
  • FIG8 is another structural diagram of a light emitting device according to some embodiments.
  • FIG9 is another structural diagram of a light emitting device according to some embodiments.
  • FIG10 is a structural diagram of a cover plate and a plurality of first sealing portions according to some embodiments.
  • FIG11 is another structural diagram of a cover plate and a plurality of first sealing portions according to some embodiments.
  • FIG12 is another structural diagram of a cover plate and a plurality of first sealing portions according to some embodiments.
  • FIG13 is a structural diagram of a housing structure according to some embodiments.
  • FIG14 is a structural diagram of a plurality of accommodating structures according to some embodiments.
  • FIG15 is an exploded view of a light emitting assembly according to some embodiments.
  • FIG16 is another structural diagram of a light emitting device according to some embodiments.
  • FIG17 is a working principle diagram of a light emitting device in the related art.
  • FIG18 is a circuit diagram of a plurality of laser chips using a common anode wiring method in the related art
  • FIG19 is a circuit diagram of a plurality of laser chips using a common cathode wiring method in the related art
  • FIG20 is another structural diagram of a light emitting device according to some embodiments.
  • FIG21 is a structural diagram of a substrate according to some embodiments.
  • FIG. 22 is another structural diagram of a substrate according to some embodiments.
  • FIG23 is a block diagram of a light emitting device according to some embodiments.
  • FIG24 is a structural diagram of a side of a tube shell facing a substrate according to some embodiments.
  • FIG25 is a circuit diagram of a light emitting device according to some embodiments.
  • FIG26 is another structural diagram of a light emitting device according to some embodiments.
  • FIG27 is a circuit diagram of a temperature measurement component according to some embodiments.
  • FIG. 28 is another structural diagram of a substrate according to some embodiments.
  • FIG29 is another structural diagram of a substrate according to some embodiments.
  • FIG30 is another structural diagram of a substrate according to some embodiments.
  • FIG31 is a circuit diagram of a tube shell according to some embodiments.
  • FIG32 is another structural diagram of a light emitting device according to some embodiments.
  • FIG33 is a structural diagram of wiring inside a first tube shell according to some embodiments.
  • FIG34 is a top view of the wiring in the first tube shell according to some embodiments.
  • FIG35 is another structural diagram of a light emitting device according to some embodiments.
  • FIG36 is a structural diagram of wiring inside a second tube shell according to some embodiments.
  • FIG37 is a top view of the wiring inside the second tube shell according to some embodiments.
  • FIG38 is another structural diagram of a light emitting device according to some embodiments.
  • FIG39 is a block diagram of a plurality of tube shells according to some embodiments.
  • FIG40 is another structural diagram of a substrate according to some embodiments.
  • FIG41 is another structural diagram of a light emitting device according to some embodiments.
  • FIG42 is another structural diagram of a side of a tube shell facing a substrate according to some embodiments.
  • FIG43 is a structural diagram of a light emitting assembly according to some embodiments.
  • FIG44 is another structural diagram of a substrate according to some embodiments.
  • FIG45 is a top view of a wiring inside a tube shell according to some embodiments.
  • FIG46 is another structural diagram of a light emitting device according to some embodiments.
  • FIG47 is another structural diagram of a side of a tube shell facing a substrate according to some embodiments.
  • FIG48A is a flow chart of a method for preparing a light emitting device according to some embodiments.
  • FIG48B is another flow chart of a method for preparing a laser projection device according to some embodiments.
  • FIG49 is another flow chart of a method for preparing a laser projection device according to some embodiments.
  • FIG50 is another flow chart of a method for preparing a laser projection device according to some embodiments.
  • FIG51 is a structural diagram of a cover plate and a second sealing portion according to some embodiments.
  • FIG53 is a structural diagram of a light emitting assembly according to some embodiments.
  • FIG54 is another structural diagram of a light emitting device according to some embodiments.
  • FIG. 55 is a partial structural diagram of a cover plate according to some embodiments.
  • first and second are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.
  • a feature defined as “first” or “second” may explicitly or implicitly include one or more of the features.
  • plural means two or more.
  • connection and its derivatives may be used.
  • connection should be understood in a broad sense.
  • connection can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium.
  • connection can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium.
  • connection can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium.
  • At least one of A, B, and C has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.
  • the term “if” is optionally interpreted to mean “when” or “upon” or “in response to determining” or “in response to detecting,” depending on the context.
  • the phrases “if it is determined that” or “if [a stated condition or event] is detected” are optionally interpreted to mean “upon determining that” or “in response to determining that” or “upon detecting [a stated condition or event]” or “in response to detecting [a stated condition or event],” depending on the context.
  • parallel As used herein, “parallel,” “perpendicular,” and “equal” include the stated conditions and conditions approximate to the stated conditions, the range of which is within an acceptable range of deviation as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).
  • FIG. 1 is a structural diagram of a laser projection device according to some embodiments.
  • the laser projection device 10 includes a light source assembly 500, an optical modulation assembly 600, and a lens 700.
  • the light source assembly 500 is configured to provide an illumination beam.
  • the optical modulation assembly 600 is configured to modulate the illumination beam provided by the light source assembly 500 using an image signal to obtain a projection beam.
  • the lens 700 is configured to project the projection beam onto a screen or a wall to form an image.
  • the light source assembly 500, the optical modulation assembly 600 and the lens 700 are sequentially connected along the light beam propagation direction, and each is wrapped by a corresponding housing.
  • the housings of the light source assembly 500, the optical modulation assembly 600 and the lens 700 support each optical component and enable each optical component to meet the predetermined sealing or airtight requirements.
  • the first end of the optical modulation component 600 is connected to the light source component 500, and the light source component 500 and the optical modulation component 600 are arranged along the emission direction of the illumination light beam of the laser projection device 10 (refer to the M direction shown in FIG. 1 ).
  • the second end of the optical modulation component 600 is connected to the lens 700, and the optical modulation component 600 and the lens 700 are arranged along the emission direction of the projection light beam of the laser projection device 10 (refer to the N direction shown in FIG. 1 ).
  • the M direction is substantially perpendicular to the N direction.
  • this connection structure can adapt to the optical path characteristics of the reflective light valve in the optical modulation component 600, and on the other hand, it is also conducive to shortening the length of the optical path in one dimensional direction, which is conducive to the structural arrangement of the laser projection device 10.
  • the length of the light path in this dimensional direction will be very long, which is not conducive to the structural arrangement of the laser projection device 10 .
  • the light source assembly 500 can provide three primary colors of light in a sequential manner (other colors of light can also be added on the basis of the three primary colors of light). Due to the persistence of vision of the human eye, the human eye sees white light formed by the mixture of the three primary colors of light. Alternatively, the light source assembly 500 can also output the three primary colors of light at the same time to continuously emit white light.
  • the light source assembly 500 may include a light emitting device that can emit a laser beam of at least one color, such as a red laser beam, a blue laser beam, or a green laser beam.
  • Fig. 2 is a light path diagram of a light source assembly, an optical modulation assembly and a lens in a laser projection device according to some embodiments.
  • Fig. 3 is a principle diagram of projection imaging of a laser projection device according to some embodiments.
  • the illumination beam emitted by the light source assembly 500 enters the optical modulation assembly 600.
  • the optical modulation assembly 600 includes an illumination lens group 501 and a light modulation device (or light valve) 502.
  • the illumination lens group 501 is configured to receive the illumination beam provided by the light source assembly 500, and transmit the illumination beam to the light modulation device 502 at a set angle and direction.
  • the light modulation device 502 is configured to modulate the illumination beam to obtain a projection beam, and reflect the projection beam into the lens 700.
  • the lighting mirror assembly 501 includes a light homogenizing component 510, a lens assembly 520, and a prism assembly 550.
  • the light homogenizing component 510 is configured to receive the illumination beam provided by the light source assembly 500 and homogenize the illumination beam.
  • the lens assembly 520 is configured to converge the illumination beam emitted from the light homogenizing component 510 to the prism assembly 550.
  • the prism assembly 550 is configured to reflect the illumination beam to the light modulation device 502.
  • the light homogenizing component 510 includes a light pipe 5101.
  • the light outlet of the light pipe 5101 may be rectangular, so as to have a shaping effect on the light spot.
  • the light spot shape of the illumination light beam emitted from the light pipe 5101 may match the rectangular light receiving surface of the light modulator 502.
  • the light homogenizing component 510 may include a fly-eye lens. The fly-eye lens may homogenize the incident illumination light beam and shape the illumination light beam to output a rectangular light spot.
  • the illumination lens assembly 501 further includes a reflector 530 .
  • the reflector 530 is located at the light-emitting side of the lens assembly 520 and is configured to reflect the illumination light beam emitted from the lens assembly 520 to the prism assembly 550 .
  • the optical modulation device 502 includes a digital micromirror device (DMD) 540.
  • DMD digital micromirror device
  • the DMD 540 is a core component, which is configured to modulate the illumination beam provided by the light source assembly 500 using the image signal. That is, the DMD 540 controls the illumination beam to display different brightness and grayscale for different pixels of the image to be projected, so as to finally form an optical image.
  • Fig. 4 is a schematic diagram of the operation of a micro reflective lens according to some embodiments. As shown in Fig. 4, the light reflected by the micro reflective lens 2401 at a negative deflection angle is called OFF light, which is invalid light.
  • Fig. 5 is a structural diagram of a light emitting device in the related art.
  • Fig. 6 is another structural diagram of a light emitting device in the related art.
  • the light emitting device 1000 includes a substrate 1001 and at least one light emitting component 2001.
  • the light emitting component 2001 includes a collimating portion 201 (such as a collimating lens), a tube shell 2020, a laser chip 2030, and a steering component 204 (such as a reflecting prism).
  • the laser chip 2030 and the steering component 204 are respectively arranged inside the tube shell 2020.
  • the tube shell 2020 includes a housing structure 2021 and a cover plate 2022, and the cover plate 2022 and the housing structure 2021 are connected to each other to form a sealed space.
  • the sealed space is configured to accommodate the laser chip 2030 and the steering component 204.
  • At least one light-emitting component 2001 includes a plurality of light-emitting components 2001.
  • the plurality of light-emitting components 2001 are evenly spaced and arranged along the length direction of the substrate 1001.
  • the laser chip 2030 and the steering component 204 are respectively fixed in the tube shell 2020 using nano-metal slurry through a low-temperature sintering process.
  • the thermal conductivity and mechanical reliability of the laser chip 2030 at high temperatures after sintering are greatly improved.
  • the steering component 204 is configured to deflect the light beam emitted by the laser chip 2030 by 90° so that the light beam is emitted in a direction perpendicular to the substrate 1001, and the light beam after reflection passes through the cover plate 2022, and finally is collimated by the collimating part 201 and emitted.
  • the laser chip 2030 is an active device and needs to be packaged in a dust-free, dry, and highly airtight space to prevent water vapor and oxygen from entering the space, thereby ensuring the reliability of the long-term operation of the light-emitting device 1000.
  • Gold-tin alloy solder is a commonly used solder for airtight packaging of the tube shell 2020.
  • the gold-tin alloy has good strength and wettability.
  • the wettability can refer to the ability of the gold-tin alloy to form a uniform and dense wetting layer on the surface of a material when the gold-tin alloy contacts the surface of the material. This wetting layer can quickly expand and evenly cover the surface of the material, fill tiny pores and depressions, and form a stable contact interface.
  • the light emitting component 2001 further includes a soldering sheet 205.
  • the soldering sheet 205 can be prepared in advance from a gold-tin alloy solder, and the thickness of the soldering sheet 205 can be adjusted according to demand, and the thickness of the soldering sheet 205 is substantially uniform.
  • soldering sheet 205 In the process of preparing the soldering sheet 205 by gold-tin alloy solder to produce a eutectic alloy to achieve sealing, it is required to plate the soldering surface (for example, at least a part of the contact surface between the cover plate 2022 and the containing structure 2021) with gold. When the temperature rises above the melting point of the solder, the solder melts and fills into the gap between the cover plate 2022 and the containing structure 2021, and finally achieves airtightness.
  • the soldering sheet 205 is usually prefabricated at the cover plate 2022. During the welding process, after the soldering sheet 205 contacts the containing structure 2021, the soldering sheet 205 is heated to complete the welding.
  • soldering sheet 205 melts and a certain pressure is applied, the solder in a molten state is very easy to overflow the sealing area (such as the contact area between the cover plate 2022 and the containing structure 2021), therefore, the solder is insufficient and welding voids are easily formed.
  • Welding voids refer to holes or gaps formed by incompletely filling the weld during the welding process.
  • the overflow of solder may also cause the solder to overflow into the sealed space, thereby affecting the laser chip 2030 .
  • the light emitting device 2000 includes a plurality of first sealing parts. Two adjacent first sealing parts contact each other by changing their own object shapes to seal the accommodating structure and the cover plate, thereby increasing the air tightness of welding, preventing solder from overflowing, and avoiding affecting the laser chip.
  • FIG7 is a structural diagram of a light-emitting device according to some embodiments.
  • the light-emitting device 2000 includes a substrate 100 and a light-emitting component 200.
  • the substrate 100 includes an electrical connection structure.
  • the light-emitting component 200 is fixed on one side of the substrate 100.
  • the substrate 100 is configured to carry and fix the light-emitting component 200, and to be electrically connected to the light-emitting component 200, so as to provide a specific electrical signal to the light-emitting component 200, thereby realizing the light-emitting component 200.
  • the light-emitting component 200 includes a tube shell 202, a laser chip, and a conductive structure.
  • the laser chip is disposed in the tube shell 202, and the conductive structure is disposed on the side of the tube shell 202 facing the substrate 100, and is connected to the electrical connection structure. In this way, the light-emitting component 200 and the substrate 100 can be electrically connected through the conductive structure and the electrical connection structure.
  • the tube shell 202 includes a housing structure 2021, a cover plate 2022, and a plurality of first sealing portions 2023.
  • the housing structure 2021 is disposed on the substrate 100, and a side of the housing structure 2021 away from the substrate 100 is recessed to form a cavity.
  • the cover plate 2022 is covered on the housing structure 2021 to close the cavity to form a sealed space.
  • a plurality of first sealing portions 2023 are disposed between the housing structure 2021 and the cover plate 2022.
  • the plurality of first sealing portions 2023 are configured to connect the housing structure 2021 and the cover plate 2022 to close the gap at the connection between the housing structure 2021 and the cover plate 2022.
  • the multiple first sealing parts 2023 are separated from each other, and the multiple first sealing parts 2023 are arranged at intervals on the side of the cover plate 2022 facing the accommodating structure 2021.
  • two adjacent first sealing parts 2023 contact each other according to the change of their own object form, so as to close the gap at the connection between the accommodating structure 2021 and the cover plate 2022.
  • the object form may include solid, liquid, etc.
  • two adjacent first sealing portions 2023 melt due to heating, changing from solid to liquid, so that the two adjacent first sealing portions 2023 contact each other to close the gap at the connection between the containing structure 2021 and the cover plate 2022 .
  • the housing structure 2021 and the cover plate 2022 are sealed by a plurality of first sealing parts 2023, so that the laser chip disposed in the tube shell 202 is isolated from the outside world, and the light-emitting device 2000 can be ensured to operate reliably for a long time.
  • the plurality of first sealing parts 2023 are separated from each other, and any first sealing part 2023 is an independent structure. After the plurality of first sealing parts 2023 change from solid to liquid, two adjacent first sealing parts 2023 contact each other through their own shape change, thereby achieving the purpose of closing the gap at the connection between the housing structure 2021 and the cover plate 2022.
  • some embodiments of the present disclosure seal the housing structure 2021 and the cover plate 2022 by multiple first sealing parts 2023, which can prevent the formation of welding voids due to the overflow of the first sealing parts 2023 and improve the airtightness.
  • the overflow of the first sealing parts 2023 can also be prevented from affecting the laser chip.
  • FIG8 is another structural diagram of a light emitting device according to some embodiments.
  • the light emitting device 2000 further includes a second sealing portion 2024.
  • the orthographic projections of the plurality of first sealing portions 2023 on the plane where the cover plate 2022 is located at least partially overlap with the orthographic projections of the second sealing portion 2024 on the plane where the cover plate 2022 is located.
  • FIG8 takes the second sealing portion 2024 being arranged on the side of the cover plate 2022 facing the accommodating structure 2021 as an example.
  • the second sealing portion 2024 satisfies at least one of the following conditions: the second sealing portion 2024 is arranged on the side of the cover plate 2022 facing the accommodating structure 2021, and is located between the cover plate 2022 and the plurality of first sealing portions 2023, or the second sealing portion 2024 is arranged on the side of the accommodating structure 2021 facing the cover plate 2022, and is located between the accommodating structure 2021 and the plurality of first sealing portions 2023.
  • the second sealing portion 2024 may be a coating structure, such as a metallization layer.
  • the metallization layer includes at least one material of titanium (Ti), platinum (Pt) or gold (Au), or at least one material of nickel (Ni) or Au, or at least one material of chromium (Cr) or gold (Au).
  • a plurality of first sealing portions 2023 may be provided on the second sealing portion 2024, and the plurality of first sealing portions 2023 cooperate with the second sealing portion 2024 to achieve the purpose of stably fixing the cover plate 2022 and the accommodating structure 2021, and closing the gap at the connection between the accommodating structure 2021 and the cover plate 2022.
  • FIG9 is another structural diagram of a light emitting device according to some embodiments.
  • the light emitting device 2000 further includes two sealing areas 300.
  • the two sealing areas 300 are respectively a first sealing area and a second sealing area.
  • the first sealing area is arranged on a side of the accommodating structure 2021 close to the cover plate 2022; a plurality of first sealing parts 2023 are arranged in the first sealing area.
  • the second sealing area is arranged corresponding to the first sealing area, the second sealing area is arranged on a side of the cover plate 2022 close to the accommodating structure 2021, and a plurality of first sealing parts 2023 are arranged in the second sealing area.
  • the orthographic projection of the second sealing area on the plane where the substrate 100 is located overlaps at least partially with the orthographic projection of the first sealing area on the plane where the substrate 100 is located.
  • the first sealing area and the second sealing area are respectively metallized layers.
  • the first sealing part 2023 is in the first sealing area and the second sealing area to close the gap at the connection between the accommodating structure 2021 and the cover plate 2022.
  • the first sealing area may include a second sealing portion 2024.
  • the second sealing area may include a second sealing portion 2024.
  • the second sealing area includes the second sealing portion 2024; when the second sealing portion 2024 is disposed on a side of the accommodating structure 2021 close to the cover plate 2022, the first sealing area includes the second sealing portion 2024.
  • the second sealing portion 2024 satisfies at least one of the following: the orthographic projection of the second sealing portion 2024 on the surface of the cover plate 2022 close to the accommodating structure 2021 is within the second sealing area, or the orthographic projection of the second sealing portion 2024 on the surface of the accommodating structure 2021 close to the cover plate 2022 is within the first sealing area.
  • the sealing area 300 can be insulated from the circuit structure (e.g., the conductive structure and the electrical connection structure) in the light emitting device 2000.
  • the sealing area 300 can increase the reliability of the connection between the first sealing portion 2023 and the cover plate 2022 and the accommodating structure 2021.
  • a scheme similar to that in FIG. 8 can be adopted, and specific settings can be made according to the material, surface flatness, insulation, etc. at the sealing area 300. In this way, the stability of the sealed accommodating structure 2021 and the cover plate 2022 can be increased.
  • Figure 10 is a structural diagram of a cover plate and a plurality of first sealing parts according to some embodiments
  • Figure 11 is another structural diagram of a cover plate and a plurality of first sealing parts according to some embodiments.
  • a plurality of first sealing parts 2023 are arranged at the second sealing area, the first sealing parts 2023 are hemispherical, and there is a gap between two adjacent first sealing parts 2023.
  • the first sealing portion 2023 is a hemispherical metal solder ball, and the material of the first sealing portion 2023 may be a gold-tin alloy.
  • the metal solder balls There is a gap between two adjacent metal solder balls disposed on the cover plate 2022. Due to the effect of pressure, the metal solder balls change their shapes, and the two adjacent metal solder balls extend in a direction close to each other and contact each other, thereby achieving the purpose of sealing the cover plate 2022 and the accommodating structure 2021.
  • the metal solder balls after the pressure effect may present a round cake shape.
  • the metal solder balls contact each other by extension to seal the accommodating structure 2021 and the cover plate 2022, so as to prevent the solder from overflowing, thereby preventing the generation of welding voids and the overflowing solder from affecting the laser chip 203.
  • FIG12 is another structural diagram of a cover plate and a plurality of first sealing parts according to some embodiments.
  • the sealing area 300 is an annular structure.
  • the surface area of the sealing area 300 is defined as S
  • the spacing between the accommodating structure 2021 and the cover plate 2022 is defined as H
  • the number of the plurality of hemispherical first sealing parts 2023 is defined as M
  • the radius of the hemispherical first sealing part 2023 is defined as R.
  • the surface area S of the sealing area 300, the spacing H between the accommodating structure 2021 and the cover plate 2022, the number M of the plurality of first sealing parts 2023, and the radius R of the first sealing part 2023 satisfy formula (1).
  • the meaning of formula (1) is that the total volume of the plurality of first sealing portions 2023 is greater than or equal to the volume of the welding area.
  • the welding area is an area defined by the sealing area 300, the accommodating structure 2021 and the cover plate 2022.
  • the hemispherical first sealing portion 2023 is used to eutectic weld the containing structure 2021 and the cover plate 2022 , which can reduce the unfilled area of the first sealing portion 2023 .
  • the first sealing portion 2023 in a high-temperature molten state can fill the sealing area 300 , thereby ensuring an airtight effect.
  • the radius R of the first sealing portion 2023 and the distance between two adjacent first sealing portions 2023 are related to the thickness of the first sealing portion 2023 that is expanded after being subjected to pressure and welding.
  • the outer lengths of any sealing area 300 are defined as the first length L1 and the first width L3, and the inner lengths are defined as the second length L2 and the second width L4.
  • the total volume of the plurality of first sealing portions 2023 is V. If the first sealing portion 2023 just fills the space corresponding to the sealing area 300 between the accommodating structure 2021 and the cover plate 2022, the total volume V of the plurality of first sealing portions 2023 satisfies formula (2) and formula (3).
  • V V 1 Formula (2)
  • the total volume V of the plurality of first sealing parts 2023 in some embodiments of the present disclosure is equal to the target volume V 1 .
  • the total volume V of the plurality of first sealing parts 2023 can be set to be slightly larger than the target volume V 1 .
  • the total volume V of the first sealing parts 2023 can exceed the target volume V 1 by at most 10%.
  • the volume V 2 of any spherical first sealing part 2023 satisfies formula (4).
  • the volume V3 of any hemispherical first sealing portion 2023 is half the volume of the spherical first sealing portion 2023, such as satisfying formula (5).
  • the circumference of any sealing area 300 is defined as L, and the distance between two adjacent hemispherical first sealing portions 2023 is defined as A. Then, the circumference L of the sealing area 300, the distance A between two adjacent hemispherical first sealing portions 2023, and the number M of the first sealing portions 2023 satisfy formula (8).
  • a ⁇ M L Formula (8)
  • the distance H between the accommodating structure 2021 and the cover plate 2022 and the size of the sealing area 300 are determined, the relationship between the number M of the first sealing parts 2023 and the radius R of the first sealing part 2023 can be obtained.
  • the distance H between the accommodating structure 2021 and the cover plate 2022 can refer to the thickness of the first sealing part 2023 after the accommodating structure 2021 and the cover plate 2022 are closed, hereinafter referred to as the sealing thickness.
  • the sealing thickness can also be the distance between the cover plate 2022 and the accommodating structure 2021 in a direction perpendicular to the plane where the substrate 100 is located.
  • the radius R of the first sealing portion 2023 is greater than or equal to 5 ⁇ m and less than or equal to 300 ⁇ m (5 ⁇ m ⁇ r ⁇ 300 ⁇ m).
  • the radius R of the first sealing portion 2023 is 5 ⁇ m, 100 ⁇ m, 200 ⁇ m, 250 ⁇ m or 300 ⁇ m.
  • the size of the radius R of the first sealing portion 2023 corresponds to different sealing thicknesses.
  • the sealing thickness satisfies at least one of the following: greater than or equal to 20 ⁇ m, or less than or equal to 50 ⁇ m.
  • the sealing thickness is 20 ⁇ m, 25 ⁇ m, 30 ⁇ m, 40 ⁇ m or 50 ⁇ m.
  • the radius of the hemispherical first sealing portion 2023 satisfies at least one of the following: greater than or equal to 40 ⁇ m, or less than or equal to 100 ⁇ m.
  • the radius of the hemispherical first sealing portion 2023 is 40 ⁇ m, 50 ⁇ m, 70 ⁇ m, 90 ⁇ m or 100 ⁇ m.
  • the sealing thickness satisfies at least one of the following: greater than or equal to 50 ⁇ m, or less than or equal to 100 ⁇ m.
  • the sealing thickness is 50 ⁇ m, 60 ⁇ m, 70 ⁇ m, 90 ⁇ m or 100 ⁇ m.
  • the radius of the first sealing part 2023 satisfies at least one of the following: greater than or equal to 120 ⁇ m, less than or equal to 180 ⁇ m.
  • the radius of the hemispherical first sealing part 2023 is 120 ⁇ m, 140 ⁇ m, 150 ⁇ m, 170 ⁇ m or 180 ⁇ m.
  • the desired sealing thickness can be obtained.
  • the ideal welding purpose can be achieved by controlling the pressure during the sealing process. In this way, when the first sealing portion 2023 of the gold-tin alloy material is used for sealing, the diffusion of the first sealing portion 2023 can also be uniform and dense as the temperature increases.
  • the first sealing portion 2023 When the radius of the hemispherical first sealing portion 2023 is greater than or equal to 200 ⁇ m and less than or equal to 300 ⁇ m, for example, the radius of the hemispherical first sealing portion 2023 is 200 ⁇ m, 220 ⁇ m, 250 ⁇ m, 280 ⁇ m or 300 ⁇ m, the first sealing portion 2023 is easy to overflow during the sealing process, and it is necessary to strictly control parameters such as pressure and temperature, which increases the difficulty of the sealing process. In this case, due to the large radius of the first sealing portion 2023, it is difficult to control the sealing thickness after sealing during the sealing process, resulting in uneven thickness of the first sealing portion 2023. In addition, due to the increase in the volume of the first sealing portion 2023, the sealing cost will also increase. Therefore, in the case of sealing a large-sized tube shell 202 and a large sealing area 300, the first sealing portion 2023 can completely fill the sealing area with the above-mentioned radius.
  • the number of the first sealing parts 2023 is in the range of 500 to 2000. Under this number, a uniform sealing thickness can be obtained by adjusting the radius of the first sealing parts 2023, and finally a suitable sealing effect can be obtained.
  • the first sealing portion 2023 mainly takes the hemispherical shape of the first sealing portion 2023 as an example.
  • the first sealing portion 2023 may also be in other shapes, such as a cube, a cuboid, a sphere, an ellipsoid, a tetrahedron, etc.
  • the radius of the first sealing portion 2023 is R, and the volume of any first sealing portion 2023 satisfies formula (9).
  • the total volume V of the plurality of first sealing portions 2023 may be set to satisfy formula (10) and formula (11).
  • FIG. 13 is a structural diagram of a housing structure according to some embodiments.
  • FIG. 14 is a structural diagram of multiple housing structures according to some embodiments.
  • the housing structure 2021 includes a side wall 208 and a bottom plate.
  • the side wall 208 is disposed on the bottom plate.
  • the side wall 208 can be formed of a ceramic material or a metal alloy material.
  • the bottom plate is the patch area of the laser chip 203 and the steering component 204. Considering the patch accuracy and heat dissipation effect, the flatness of the bottom plate is required to be high. Therefore, the bottom plate can be made of materials with good heat dissipation such as oxygen-free copper and diamond.
  • the bottom plate and the side wall 208 can be sintered to form the overall structure of the housing structure 2021.
  • the accommodating structure 2021 further includes at least two step portions 206. At least two step portions 206 are provided on both sides of the side wall 208 along the length direction of the accommodating structure 2021. A metal film is provided on any step 206, so that the step portion 206 is electrically connected to the base plate to realize the electrical connection between the light emitting component 200 and the substrate 100.
  • the accommodating structure 2021 further includes a positioning portion 207. The positioning portion 207 is provided in the middle part of the step portion 206 along the width direction of the accommodating structure 2021, and the positioning portion 207 can be used as an identification area. For example, a global coordinate system is constructed by the positioning portions 207 on both sides.
  • the rectangular portion in the middle of the at least two step portions 206 is a circuit isolation area, so that the electrical connections between the at least two step portions 206 and the base plate are independent of each other.
  • An identification area can be added to one side of the side wall 208 to identify the orientation or direction of the side wall 208 when the side wall 208 is installed with the substrate 100.
  • the laser chip 203 can be welded to the heat sink through the eutectic process.
  • the main material of the heat sink can be aluminum nitride (ALN), silicon carbide (SiC), etc.
  • APN aluminum nitride
  • SiC silicon carbide
  • the waveguide size of the laser chip 203 in the direction of the fast axis is small, so that the beam quality of the output beam is close to the diffraction limit and a large divergence angle will be generated.
  • the divergence angle of the beam can be between 40° and 60°.
  • the divergence angle of the laser chip 203 in the direction of the slow axis can be between 6° and 15°, the beam quality is poor, the size of the active area is generally between 100 ⁇ m and 500 ⁇ m, and the direction of the fast axis is perpendicular to the direction of the slow axis.
  • the steering component 204 can bend the optical path of the light beam emitted by the laser chip 203 by 90°.
  • the material of the steering component 204 can be borosilicate glass, quartz, silicon, etc., and an anti-reflection film can be set on the surface of the steering component 204 to improve the reflectivity. Since the divergence angle of the laser chip 203 in the fast axis direction is large, the steering component 204 can only bend most of the light beam emitted by the laser chip 203. A small part of the light beam does not form effective light, but is emitted from the side of the steering component 204 to form a stray light beam.
  • FIG15 is an exploded view of a light emitting assembly according to some embodiments.
  • the light emitting assembly 200 further includes at least one collimating portion 201.
  • At least one collimating portion 201 is disposed on the cover plate 2022.
  • the collimating portion 201 is mainly configured to process the divergence angle of the light beam emitted by the laser chip 203. Therefore, the collimating portion 201 needs to be designed and adjusted according to the divergence angle of the laser chip 203 and the optical path of the light emitting device 2000.
  • the curvature of the collimating portion 201 can be adjusted according to the different characteristics of any light emitting device 2000, or the curvature of the collimating portion 201 can be kept the same to facilitate processing and reduce costs.
  • the surface shape of the collimating portion 201 may be an aspherical surface, a free-form surface, or may adopt a Fresnel structure to realize the function of compressing the divergence angle.
  • the Fresnel structure is similar to a Fresnel lens.
  • the surface parameters of the collimating portion 201 are related to the optical path of the light beam. Therefore, in the light-emitting device 2000, the position of the laser chip 203, the position of the steering component 204, and the spacing between the cover plate 2022 and the accommodating structure 2021 need to be set within a preset tolerance range.
  • the number of collimating portions 201 is the same as the number of light-emitting components 200.
  • At least one collimating portion 201 includes a plurality of collimating portions 201 .
  • the collimating portion 201 can be fixed by dispensing glue at the four corners of any collimating portion 201 , and the dispensing position needs to avoid the optically effective area.
  • the optically effective area may refer to an area where the collimating portion 201 can effectively process and transmit light.
  • FIG. 16 is another structural diagram of a light-emitting device according to some embodiments.
  • the packaged light-emitting component 200 can be separated again.
  • the cover plate 2022 is separated from the housing structure 2021 again, as shown in FIG. 16, by observing the sealing area 300, it can be seen that the distribution shape of the intermetallic compounds (Intermetallic Compounds) formed at the position of the first sealing portion 2023 is circular. Since the thickness of the intermetallic compounds at the position of the first sealing portion 2023 is thicker than that of other areas, it can be clearly observed that the corresponding area of the first sealing portion 2023 and the area not filled with solder present different colors.
  • Intermetallic Compounds Intermetallic Compounds
  • the light emitting devices in some embodiments of the present disclosure are introduced below.
  • miniaturized laser projection equipment has increased the difficulty of designing miniaturized light-emitting devices.
  • multiple laser chips in the light-emitting device usually adopt a common anode or common cathode wiring method.
  • the common anode wiring method may refer to the anodes of multiple laser chips being connected to the positive pole of the same power supply, while the cathodes of multiple laser chips are respectively connected to multiple drive circuits of the light-emitting device;
  • the common cathode wiring method may refer to the cathodes of multiple laser chips being connected to the negative pole of the same power supply, while the anodes of multiple laser chips are respectively connected to multiple drive circuits of the light-emitting device.
  • the common anode routing method makes it difficult to accurately control the input voltage of the laser chip, which not only causes power loss but also easily damages the laser chip.
  • the common cathode routing method can effectively control the input voltage of the laser chip and reduce power consumption, when multiple laser chips are required to work simultaneously to increase brightness, it is difficult to solve the problem of increased costs caused by the increase in the number of driving circuits.
  • the driving circuit board is used to transmit a driving signal to the light-emitting device
  • the power board is used to supply power to the light-emitting device.
  • the light-emitting device When the light-emitting device is powered on, it emits three colors of laser (such as red laser, blue laser and green laser) according to the received driving signal.
  • FIG18 is a circuit diagram of a plurality of laser chips in a light-emitting device using a common anode wiring method
  • FIG19 is a circuit diagram of a plurality of laser chips in a light-emitting device using a common cathode wiring method.
  • every three laser chips (such as a red laser chip R, a green laser chip B and a blue laser chip B) form a light-emitting device, and the light-emitting device can emit red laser, green laser and blue laser.
  • R_T, G_T and B_T (such as R_T0, G_T0, B_T0; R_T1, G_T1, B_T1; R_T2, G_T2, B_T2) in the figure represent the driving circuit of the light-emitting device.
  • some embodiments of the present disclosure provide a light-emitting device and a laser device.
  • the light-emitting device includes a substrate and a light-emitting component, the light-emitting component is fixed on the connection pattern of the substrate, and the laser chips emitting the same color are connected in series with each other, and are electrically connected to the corresponding two first pads with different polarities through the first routing, the conductive structure, the conductive part and the interconnection area, so that the laser chips emitting lasers of different colors can be powered separately, solving the problem that the number of laser chips used is limited by the number and cost of driving circuits, so that when the number of laser chips is increased, the number of driving circuits remains unchanged, effectively improving the working efficiency of the driving circuit and reducing the cost.
  • a light emitting device 2000 includes a substrate 100 and a light emitting component 200, and the light emitting component 200 is located on one side of the substrate 100.
  • the substrate 100 includes at least one connection pattern 13, a plurality of first pads 11, a plurality of interconnection regions 12, and a substrate body, and the at least one connection pattern 13, the plurality of first pads 11, and the plurality of interconnection regions 12 are respectively arranged on one side of the substrate body facing the light emitting component 200.
  • a plurality of second traces are disposed in the substrate body, and the plurality of second traces form a plurality of interconnection regions 12 .
  • connection pattern 13 is disposed on a side of the substrate body facing the light emitting component 200 .
  • the plurality of interconnection regions 12 are metal film layers, and the plurality of first pads 11 are electrically connected to at least one connection pattern 13 through the plurality of interconnection regions 12.
  • the plurality of first pads 11 are connected to a drive circuit and a power source.
  • the plurality of first pads 11 may be connected to a power source through a connector, a flexible substrate, an epoxy glass substrate, a spring-type terminal, and the like.
  • the plurality of first pads 11 include a plurality of groups of first pads 11.
  • any group of first pads 11 includes two first pads 11.
  • Any group of first pads 11 includes a positive polarity pad and a negative polarity pad.
  • multiple groups of first solder pads 11 satisfy one of the following: within the plane where the substrate 100 is located, the multiple groups of first solder pads 11 are all located on the same side of the substrate body and close to the edge of the substrate body; the first solder pads 11 of the same polarity in the multiple groups of first solder pads 11 are arranged adjacent to each other; and the first solder pads 11 of different polarities in any group of first solder pads 11 are arranged adjacent to each other.
  • any first pad 11 is a metal layer and has a rectangular shape.
  • any one of the at least one connection pattern 13 includes a fixing portion 132, which is disposed on the substrate body and corresponds to the bottom wall of at least one tube shell 202.
  • the fixing portion 132 is electrically connected to the bottom wall of at least one tube shell 202.
  • the light-emitting component 200 is fixed to the fixing portion 132, which may be made of metal and may be rectangular in shape.
  • the connection pattern 13 also includes a conductive portion 131, which is electrically connected to the light-emitting component 200.
  • the area marked by the thick black frame in FIG. 21 is the position where the light-emitting component 200 is fixed on the substrate 100.
  • the light emitting component 200 includes at least one tube shell 202.
  • Any tube shell 202 of the at least one tube shell 202 includes a tube shell bottom wall, a tube shell side wall and a sealing glass.
  • the tube shell bottom wall is parallel to the plane where the substrate 100 is located, and the tube shell side wall is perpendicular to the plane where the substrate 100 is located.
  • the sealing glass is located on the side of the tube shell side wall away from the tube shell bottom wall.
  • the tube shell bottom wall, the tube shell side wall and the sealing glass form a sealed space.
  • the lower surface of the tube shell bottom wall is connected to the fixing portion 132.
  • At least one of the tube shell bottom wall or the tube shell side wall can be provided with wiring, and at least one of the tube shell bottom wall or the tube shell side wall can be made of ceramic material.
  • the material of the side wall of at least one tube shell 202 is ceramic, and the material of the bottom wall of at least one tube shell 101 is metal.
  • the light emitting device 2000 further includes an electrical coupling component 400, which is disposed in an area of the substrate body close to the plurality of groups of first pads 11, the electrical coupling component 400 and the plurality of groups of first pads 111 are electrically connected, and the electrical coupling component 400 is configured to connect an external electrical signal
  • the light emitting component 200 further includes a first wiring 23 , and the first wiring 23 is disposed on at least one of the side of the tube shell or the bottom wall of the tube shell.
  • the light emitting component 200 further includes a conductive structure 24 and a first metal film 25 (metal film).
  • the conductive structure 24 and the first metal film 25 are disposed on the side of the tube shell 202 facing the substrate body (i.e., the lower surface of the bottom wall of the tube shell), and the position of the conductive structure 24 corresponds to the position of the conductive part 131, and the conductive structure 24 is electrically connected to the conductive part 131.
  • the position of the first metal film 25 corresponds to the position of the fixed part 132, and the first metal film 25 is connected to the fixed part 132.
  • the light emitting component 200 further includes a plurality of step portions 206.
  • the plurality of step portions 206 are disposed in any tube shell 202 and are located on both sides of the tube shell 202 in the length direction.
  • the plurality of step portions 206 include four step portions 206, two of which are located in the first tube shell 211, and the other two step portions 206 are located in the second tube shell 212.
  • a second metal film is disposed on the upper surface of the step portion 206 (i.e., the surface away from the substrate 100), and the second metal film is electrically connected to the conductive structure 24 through the first trace 23.
  • the light emitting component 200 further includes a plurality of laser chips 203, and the plurality of laser chips 203 are located in the tube shell 202.
  • the plurality of laser chips 203 are located in a sealed space formed by the bottom wall of the tube shell, the side wall of the tube shell, and the sealing glass.
  • the plurality of laser chips 203 include at least two laser chips 203 with different light emission colors, and any one of the laser chips 203 corresponds to a group of first pads 11.
  • the multiple laser chips 203 can be electrically connected to the conductive structure 24 through the first wiring 23, and the conductive part 131 is electrically connected to the multiple first pads 11 through the multiple interconnection regions 12. In this way, the multiple laser chips 203 can be electrically connected to the multiple first pads 11.
  • the same laser chip 203 can be electrically connected to a corresponding group of first pads 11 through the first wiring 23, the conductive structure 24, the conductive portion 131 and the interconnection area 12, thereby realizing separate power supply for multiple laser chips 203.
  • the plurality of laser chips 203 include a first laser chip 221 and a second laser chip 222.
  • the first laser chip 221 emits a blue laser
  • the second laser chip 222 emits a red laser or a green laser. Since the first laser chip 221 is electrically connected to a corresponding group of first pads 11, and the second laser chip 222 is electrically connected to another corresponding group of first pads 11, the substrate 100 includes at least four first pads 11.
  • FIG. 20 takes the light emitting device 2000 including two laser chips 203 with different light emission colors as an example for description, but does not constitute a limitation on the light emitting device 2000 of some embodiments of the present disclosure.
  • the plurality of laser chips 203 may also include three laser chips 203, the three laser chips 203 respectively emit lasers of different colors, and the three laser chips 203 are respectively electrically connected to a corresponding group of first pads 11 through the first traces 23 to realize the separate power supply of any one of the three laser chips 203, and the present disclosure does not limit the type of the laser chip 203.
  • the light emitting device 2000 includes three laser chips 203, namely, a red laser chip (such as R, R1 and R2), a green laser chip (such as G, G1 and G2) and a blue laser chip (such as B, B1 and B2).
  • a red laser chip such as R, R1 and R2
  • a green laser chip such as G, G1 and G2
  • a blue laser chip such as B, B1 and B2
  • the red laser chip can emit a red laser
  • the green laser chip can emit a green laser
  • the blue laser chip can emit a blue laser.
  • any laser chip 203 is connected in series with a corresponding power supply and a driving circuit (such as R_T0, G_T0 and B_T0)
  • the number of driving circuits can remain unchanged. In this way, the problem that the number of laser chips 203 used is limited by the driving circuit can be solved, and the working efficiency of the driving circuit can be effectively improved and the cost can be reduced.
  • the thickness of the substrate 100 may be 2 ounces (oz), or approximately 70 micrometers.
  • any first solder pad 11 among the plurality of first solder pads 11 at least partially overlaps with any interconnection region 12 among the plurality of interconnection regions 12, the connection pattern 13 at least partially overlaps with the plurality of interconnection regions 12, and the conductive structure 24 at least partially overlaps with the connection pattern 13.
  • connection area between the first pad 11 and the interconnection area 12 In a direction perpendicular to the plane where the substrate 100 is located, there is an overlapping area between the first pad 11 and the interconnection area 12, and the overlapping area is the connection area between the first pad 11 and the interconnection area 12.
  • the at least partial overlap of the first pad 11 and the interconnection area 12 can be understood as: in a direction perpendicular to the plane where the substrate 100 is located, the first pad 11 is located in the interconnection area 12 (as shown in Figure 21 or Figure 22), or the first pad 11 and the interconnection area 12 partially overlap, and the first pad 11 and the interconnection area 12 also have non-overlapping (e.g., staggered) areas.
  • connection pattern 13 or the conductive part 131 and the interconnection area 12 there is an overlapping area between the connection pattern 13 or the conductive part 131 and the interconnection area 12, and the overlapping area is the connection area between the connection pattern 13 or the conductive part 131 and the interconnection area 12.
  • the conductive part 131 and the interconnection area 12 at least partially overlap, which can be understood as: in the direction perpendicular to the plane where the substrate 100 is located, the conductive part 131 is located in the interconnection area 12 (as shown in Figures 21 or 23), or the conductive part 131 and the interconnection area 12 partially overlap, and there is also a non-overlapping area between the conductive part 131 and the interconnection area 12.
  • the first pad 11 can be electrically connected to the connection pattern 13 through the interconnection region 12 .
  • the conductive structure 24 In a direction perpendicular to the plane where the substrate 100 is located, the conductive structure 24 at least partially overlaps with the connection pattern 13, that is, there is an overlapping area between the conductive structure 24 and the connection pattern 13, thereby achieving electrical connection between the conductive structure 24 and the connection pattern 13.
  • the conductive structure 24 at least partially overlaps with the connection pattern 13, which can be understood as: in a direction perpendicular to the plane where the substrate 100 is located, the conductive structure 24 is located in the connection pattern 13, or the connection pattern 13 is located in the conductive structure 24, or the conductive structure 24 and the connection pattern 13 partially overlap, and there is also a non-overlapping area between the conductive structure 24 and the connection pattern 13.
  • the plurality of first pads 11 are located on the same side of the substrate 100. In this way, after the tube shell 202 is disposed on the substrate 100, the plurality of first pads 11 are also located on the same side of the tube shell 202, which can not only ensure the miniaturization of the light-emitting device 2000, but also increase the aesthetic appearance of the light-emitting device 2000, and facilitate manual soldering.
  • the plurality of first pads 11 may also be located on two opposite sides of the tube shell 202 in the length direction or the width direction, so that independent power supply to any type of laser chip 203 may also be achieved.
  • FIG20 takes an example in which the multiple laser chips 203 include a first laser chip 221 and a second laser chip 222, and the first laser chip 221 emits a blue laser, and the second laser chip 222 emits a red laser or a green laser.
  • the multiple laser chips 203 may also include three types of laser chips 203.
  • the plurality of laser chips 203 include two first laser chips 221 with different light emission colors, three second laser chips 222, and four third laser chips 223.
  • the laser chips 203 of a type located in the same tube shell 202 are connected in series with each other and are connected to a corresponding group of first pads 11.
  • the number of first pads 11 electrically connected to the light emitting component 200 is twice the number of types of laser chips 203.
  • One laser chip 203 emits laser light of one color, and the light emission colors of the first laser chip 221, the second laser chip 222, and the third laser chip 223 are different from each other.
  • the first laser chip 221 emits blue laser light
  • the second laser chip 222 emits green laser light
  • the third laser chip 223 emits red laser light
  • the first laser chip 221 emits green laser light
  • the second laser chip 222 emits blue laser light
  • the third laser chip 223 emits red laser light.
  • the light emission wavelength of the third laser chip 223 is greater than the light emission wavelength of the first laser chip 221 and the second laser chip 222.
  • the third laser chip 223 emits red laser light, and the corresponding light emission wavelength is any value in the range of 622nm to 760nm
  • the first laser chip 221 emits blue laser light
  • the corresponding light emission wavelength is any value in the range of 435nm to 450nm
  • the second laser chip 222 emits green laser light
  • the corresponding light emission wavelength is any value in the range of 492nm to 577nm.
  • the first laser chip 221, the second laser chip 222, and the third laser chip 223 can also emit laser light of other colors, which are not limited here.
  • At least one laser chip 203 among the plurality of laser chips 203 is disposed in a tube shell 202.
  • all laser chips 203 with the same light emission color are connected in series and connected to a corresponding group of first pads 11.
  • At least one tube shell 202 includes a first tube shell 211 and a second tube shell 212.
  • the first tube shell 211 and the second tube shell 212 are arranged side by side along the length direction of the light emitting assembly 200 (eg, the left-right direction in FIG. 26 ).
  • the four third laser chips 223 are arranged in the first tube shell 211, and the four third laser chips 223 are connected in series through wires (such as gold wires or bonding wires), and the two ends of the series circuit are respectively electrically connected to the second metal film of the step portion 206 on both sides, the second metal film is electrically connected to the conductive structure 24 through the first wiring 23, the conductive structure 24 is electrically connected to the conductive part 131, and the conductive part 131 is electrically connected to the corresponding two first pads 11 through the interconnection area 12, thereby realizing the electrical connection between the four third laser chips 223 and the corresponding group of first pads 11.
  • wires such as gold wires or bonding wires
  • Two first-type laser chips 221 and three second-type laser chips 222 are disposed in the second tube shell 212.
  • the two first-type laser chips 221 are connected in series through a wire, and both ends of the series circuit are electrically connected to the second metal film of a step portion 206, the second metal film is electrically connected to the conductive structure 24 through the first wiring 23, the conductive structure 24 is electrically connected to the conductive portion 131 of the connection pattern 13, and the connection pattern 13 is electrically connected to the corresponding two first pads 11 through the interconnection region 12, thereby realizing the electrical connection between the two first-type laser chips 221 and the corresponding group of first pads 11.
  • the three second-type laser chips 222 are connected in series through wires, and the two ends of the series circuit are electrically connected to the second metal film of another step portion 206.
  • the second metal film is electrically connected to the conductive structure 24 through the first wiring 23, and the conductive structure 24 is electrically connected to the conductive portion 131 of the connection pattern 13.
  • the connection pattern 13 is electrically connected to the corresponding two first pads 11 through the interconnection area 12, thereby realizing the electrical connection between the three first-type laser chips 221 and the corresponding group of first pads 11.
  • FIG. 26 takes the multiple tube shells 202 including two tube shells 202 as an example, but the present disclosure is not limited to this.
  • at least one tube shell 202 may also include one tube shell 202, and the first laser chip 221, the second laser chip 222, and the third laser chip 223 are located in the same tube shell 202; or, at least one tube shell 202 includes three tube shells 202, the first laser chip 221, the second laser chip 222, and the third laser chip 223 correspond to the three tube shells 202 respectively, and the laser chips 203 with the same light emitting color are located in the same tube shell 202.
  • the present disclosure does not limit the number of tube shells 202.
  • the multiple first pads 11 include four groups of first pads 11, and the four groups of first pads 11 are: a first positive polarity pad (R+) and a first negative polarity pad (R-), a second positive polarity pad (B+) and a second negative polarity pad (B-), a third positive polarity pad (G+) and a third negative polarity pad (G-), and a fourth positive polarity pad (NTC+) and a fourth negative polarity pad (NTC-).
  • the first positive polarity pad (R+) corresponds to the first positive polarity pad 1012, and the first negative polarity pad (R-) corresponds to the first negative polarity pad 1013;
  • the second positive polarity pad (B+) corresponds to the second positive polarity pad 1015, and the second negative polarity pad (B-) corresponds to the second negative polarity pad 1014;
  • the third positive polarity pad (G+) corresponds to the third positive polarity pad 1016, and the third negative polarity pad (G-) corresponds to 1017;
  • the fourth positive polarity pad (NTC+) corresponds to 1011, and the fourth negative polarity pad (NTC-) corresponds to the fourth negative polarity pad 1018.
  • the arrangement order of the eight first pads 11 is: the fourth positive pad (NTC+), the first positive pad (R+), the first negative pad (R-), the second negative pad (B-), the second positive pad (B+), the third positive pad (G+), the third negative pad (G-) and the fourth resistor negative pad (NTC-).
  • the fourth positive pad (NTC+) is adjacent to the first positive pad (R+)
  • the first negative pad (R-) is adjacent to the second negative pad (B-)
  • the second positive pad (B+) is adjacent to the third positive pad (G+)
  • the third negative pad (G-) is adjacent to the fourth negative pad (NTC-).
  • the positions of the multiple first pads 11 are set according to the principle of being adjacent to the same polarity, which can prevent the positive and negative electrodes from being short-circuited due to welding errors.
  • the present disclosure does not limit the type of the first pad 11.
  • the first pad 11 may be a cross pad.
  • the first pad 11 may also be any type of pad known to those skilled in the art.
  • the substrate 100 further includes a temperature measuring component (e.g., a thermistor) 4, and the temperature measuring component 4 is connected to a corresponding set of first pads 11 through a second trace.
  • the temperature measuring component 4 is configured to detect the heating condition of the laser chip 203.
  • the temperature measuring component 4 includes a negative temperature coefficient temperature measuring component (Negative Temperature Coefficient, NTC), or other types of temperature measuring components known to those skilled in the art, which are not limited here.
  • NTC Negative Temperature Coefficient
  • the temperature measuring component 4 satisfies at least one of the following conditions: the temperature measuring component 4 is located in the middle of the arrangement direction of the plurality of groups of first pads 11, and the plurality of groups of first pads 11 are symmetrically arranged on both sides of the temperature measuring component 4. As shown in FIG. 21 and FIG.
  • the temperature measuring component 4 is located on one side of the connection pattern 13 close to the eight first pads 11, and the eight first pads 11 are symmetrically distributed on both sides of the temperature measuring component 4, and a group of first pads 11 corresponding to the temperature measuring component 4 (i.e., the fourth positive pad NTC+ and the fourth negative pad NTC-) are located at the outermost side of the plurality of first pads 11, and the temperature measuring component 4 is electrically connected to the fourth positive pad (NTC+) and the fourth negative pad (NTC-) through the corresponding interconnection area 12.
  • the circuit connection line of the temperature measuring component 4 is shown in FIG. 27, in which TP1 represents the fourth positive pad (NTC+), and TP8 represents the fourth negative pad (NTC-).
  • the conductive structure 24 includes a plurality of second pads 241, and the second pads 241 are connected to the first trace 23.
  • the plurality of second pads 241 correspond to the sidewall of at least one tube shell 202.
  • the plurality of second pads 241 are connected to the sidewall of at least one tube shell 202.
  • the conductive portion 131 in a direction perpendicular to the plane where the substrate 100 is located, includes a plurality of third pads 1311, and any third pad 1311 of the plurality of third pads 1311 at least partially overlaps with the interconnection region 12.
  • the plurality of third pads 1311 are electrically connected to the plurality of second pads 241 respectively, and the plurality of third pads 1311 are also electrically connected to the plurality of first pads 11 through the interconnection region 12.
  • the second pads 241 are welded to the corresponding laser chips 203 through the first traces 23, and the plurality of laser chips 203 with the same light emission color in the same tube shell 202 are connected in series. In this way, the laser chips 203 of any color can be powered separately, and the increase in the number of laser chips 203 resulting in an increase in the number of driving circuits can be avoided, which is conducive to reducing costs.
  • the conductive structure 24 may include eight second solder pads 241, and four second solder pads are provided on one side of any tube shell 202 close to the first solder pad 11, and the four second solder pads 241 are arranged side by side.
  • Two second pads 241 on the second tube shell 212 are connected to the first group of first pads 11, and the other two second pads 241 on the second tube shell 212 are connected to the second group of first pads 11.
  • Two second pads 241 on the first tube shell 211 far from the second tube shell 212 are connected to the third group of first pads 11, and one of the other two adjacent second pads 241 on the first tube shell 211 close to the second tube shell 212 is electrically connected to the second pad 241 on the second tube shell 212 close to the first tube shell 211.
  • the first tube shell 211 and the second tube shell 212 are respectively provided with a metal film 25 and a plurality of second pads 241 on the side facing the substrate 100, the metal film 25 corresponds to and is connected to the fixing portion 132, and the plurality of second pads 241 correspond to and are electrically connected to the plurality of third pads 1311. In this way, the light emitting component 200 and the substrate 100 can be fixed and electrically connected.
  • the first tube shell 211 and the second tube shell 212 are fixed and electrically connected to the substrate 100 in the following manner: the fixing portion 132 of the connection pattern 13 located on the right side is fixedly connected to the metal film 25 of the second tube shell 212 on the side facing the substrate 100, and four third pads 1311 corresponding to the four second pads 241 of the second tube shell 212 are arranged close to the first pad 11, two of the four third pads 1311 are connected to a group of first pads 11 through the interconnection region 12, and the other two third pads 1311 are connected to another group of first pads 11 through the interconnection region 12.
  • the fixed portion 132 of the connection pattern 13 located on the left side is fixedly connected to the metal film 25 on the side of the first tube shell 211 facing the substrate 100, and the four third pads 1311 corresponding to the four second pads 241 of the first tube shell 211 are arranged close to the first pad 11.
  • Two third pads 1311 far away from the connection pattern 13 on the right side of the four third pads 1311 are connected to a group of third pads 1311 through the interconnection area 12, and at least one third pad 1311 close to the right side of the other two third pads 1311 (such as the two third pads 1311 numbered 3 and 4 in Figure 22) is connected to the third pad 1311 closest to the first tube shell 211 on the left side in the conductive portion 131 of the connection pattern 13 on the right side (such as the third pad 1311 numbered 5 in Figure 22) through the same interconnection area 12.
  • the third pads 1311 numbered 3 and 4 are electrically connected to the third pad 1311 numbered 5 through the interconnection region 12; as another example, as shown in FIG29, the third pad 1311 numbered 4 is electrically connected to the third pad 1311 numbered 5 through the interconnection region 12.
  • the connection pattern 13 on the right side corresponds to the second tube shell 212
  • the connection pattern 13 on the left side corresponds to the first tube shell 211.
  • some embodiments of the present disclosure can set a second pad 241 on the side of the tube shell 202 close to the first pad 11, and the second pad 241 is electrically connected to the corresponding first pad 11 through the third pad 1311 close to the first pad 11 and the interconnection area 12.
  • the second pad 241 can also be arranged on the side of the tube shell 202 away from the first pad 11.
  • the interconnection area 12 can also be arranged in at least one of the following positions: the area between the positioning hole on the substrate 100 and the tube shell 202, or the area between the two tube shells 202 on the substrate 100. In this way, after the third pads 1311 close to each other are connected through the interconnection area 12, the third pads 1311 can be electrically connected to the first pad 11, so that the routing width can be increased, thereby increasing the amount of current passing through.
  • the substrate 100 includes eight first solder pads 11
  • the at least one tube shell includes two tube shells
  • the multiple laser chips include laser chips of three different colors.
  • first pads 11 are located on the same side of two tube shells 202, and four second pads 241 are provided on the side of any tube shell 202 close to the first pad 11.
  • the substrate corresponding to the first tube shell 211 and the second tube shell 212 is shown in FIG21 or 23.
  • the conductive portion 131 includes eight third pads.
  • the eight third pads 1311 close to the first pad 11 are numbered, and the four third pads 1311 corresponding to the four second pads 241 on the first tube shell 211 are numbered 1 to 4, and the four third pads 1311 corresponding to the four second pads 241 on the second tube shell 212 are numbered 5 to 8.
  • the first laser chip 221 emits a blue laser
  • the second laser chip 222 emits a green laser
  • the third laser chip 223 emits a red laser.
  • a plurality of third laser chips 223 are packaged in the first tube shell 211, and the third laser chip 223 is electrically connected to two corresponding second pads 241 through the first trace 23 of the first tube shell 211, and the two second pads 241 are connected to two corresponding third pads 1311 (numbered 1 and 2), and the third pad 1311 numbered 1 is connected to the first positive pad (R+) through the interconnection region 12, and the third pad 1311 numbered 2 is connected to the first negative pad (R-) through the interconnection region 12,
  • a plurality of first laser chips 221 and a plurality of second laser chips 222 are packaged in the second tube shell 212.
  • the first laser chip 221 is electrically connected to two corresponding second pads 241 through the first trace 23 of the second tube shell 212, and the two second pads 241 are connected to two corresponding third pads 1311 (numbered 5 and 6), the third pad 1311 numbered 5 is connected to the second negative polarity pad (B-) through the interconnection region 12, and the third pad 1311 numbered 6 is connected to the second positive polarity pad (B+) through the interconnection region 12.
  • the second laser chip 222 is electrically connected to the corresponding two second pads 241 through the first routing line 23 in the second tube shell 212, and the two second pads 241 are connected to the corresponding two third pads 1311 (numbered 7 and 8), the third pad 1311 numbered 7 is connected to the third positive polarity pad (G+) through the interconnection area 12, and the third pad 1311 numbered 8 is connected to the third negative polarity pad (G-) through the interconnection area 12.
  • the third pad 1311 numbered 3, the third pad 1311 numbered 4, and the third pad 1311 numbered 5 may have a variety of connection modes.
  • the third pad 1311 numbered 3, the third pad 1311 numbered 4, and the third pad 1311 numbered 5 can be electrically connected to the second negative polarity pad (B-) through the same interconnection area 12.
  • the second negative polarity pad (B-) is connected to the three third pads 1311 numbered 3, 4, and 5 through the corresponding interconnection area 12.
  • the width of the wiring can be increased, thereby increasing the amount of current passing through and improving the luminous intensity of the laser chip 203.
  • it can also avoid affecting the position of the temperature measuring component 4 and the first pad 11, simplifying the structure of the light-emitting device 2000.
  • the third pad 1311 numbered 4 and the third pad 1311 numbered 5 are electrically connected to the second negative pad (B-) through the same interconnection region 12.
  • the third pad 1311 numbered 5 is connected to the second pad 241 at the bottom of the second tube shell 212, and the second pad 241 is connected to the negative electrode of the blue laser chip, thereby realizing the electrical connection between the blue laser chip and the second negative pad (B-).
  • the third pad 1311 numbered 3 and the third pad 1311 numbered 2 are electrically connected to the first negative pad (R-) through the same interconnection region 12.
  • the third pad 1311 numbered 2 is connected to the second pad 241 at the bottom of the first tube shell 211, and the second pad 241 is connected to the negative electrode of the red laser chip, thereby realizing the electrical connection between the red laser chip and the first negative pad (R-).
  • the routing width of the first negative polarity pad (R-) and the second negative polarity pad (B-) can be doubled, thereby increasing the amount of current passing through and improving the luminous intensity of the laser chip 203. It can also avoid affecting the position of the temperature measuring component 4 and the first pad 11, thereby simplifying the structure of the light-emitting device 2000.
  • the positions of the plurality of third pads 1311 correspond to the positions of the plurality of second pads 241 to ensure uniform routing width.
  • the fourth positive pad (NTC+) and the fourth negative pad (NTC-) can be respectively arranged on the left side of the substrate 100.
  • the second pad 241 of any tube shell 202 can be directly electrically connected to the first pad 11 adjacent to the second pad 241, but it is necessary to readjust the routing between the first pad 11 and the temperature measuring component 4.
  • the fourth positive pad (NTC+) and the fourth negative pad (NTC-) are still respectively arranged on the left and right sides, and the number of the first pads 11 on the two sides is different.
  • the third pad 1311 corresponding to any laser chip 203 may correspond to the position of the second pad 241 of the tube shell 202 and be evenly distributed, which is not limited in the present disclosure.
  • Figure 31 is a circuit diagram corresponding to the light-emitting device 2000 shown in Figure 21 or Figure 28
  • U1 represents the first tube shell 211
  • U2 represents the second tube shell 212
  • the first tube shell 211 and the second tube shell 212 have the same structure, and U2 is obtained by rotating U1 180° clockwise;
  • Pin 1 of U1 is connected to TP2, and the upper pin 2 is connected to TP3.
  • Pin 3 and pin 4 of U1 and pin 5 of U2 are respectively connected to TP4, Pin 6 of U2 is connected to TP5, Pin 7 is connected to TP6, and Pin 8 is connected to TP7.
  • Pins 1-4 of U1 correspond to four third solder pads 1311 numbered 1-4 respectively
  • pins 5-8 of U2 correspond to four third solder pads 1311 numbered 5-8 respectively
  • TP2 corresponds to the first positive polarity solder pad (R+)
  • TP3 corresponds to the first negative polarity solder pad (R-)
  • TP4 corresponds to the second negative polarity solder pad (B-)
  • TP5 corresponds to the second positive polarity solder pad (B+)
  • TP6 corresponds to the third positive polarity solder pad (G+)
  • TP7 corresponds to the third negative polarity solder pad (G-).
  • At least one tube shell 202 includes a first tube shell 211 and a second tube shell 212, and the first tube shell 211 and the second tube shell 212 are arranged along the first direction Y.
  • the light-emitting component 200 also includes a lens 8, and the lens 8 is located on a side of the tube shell 202 away from the substrate 100.
  • the first tube shell 211 and the second tube shell 212 are respectively provided with a laser chip 203 and a reflective prism 5.
  • the laser chip 203 emits laser along the first direction Y or the opposite direction of the first direction Y.
  • the laser is projected on the reflective surface of the reflective prism and is reflected.
  • the reflected laser is emitted through at least one of the light window (sealed glass) or the lens 8.
  • the first direction Y is the direction from right to left in FIG. 26 .
  • the light-emitting component 200 further includes at least one light-transmitting glass seal, which is located on a side of at least one tube shell 202 away from the substrate 100, and at least one tube shell 202 and the at least one light-transmitting glass seal form a housing space, and the housing space accommodates at least one laser chip among the multiple laser chips.
  • the light emitting device 1000 further includes other components known to those skilled in the art, such as a reflective prism 5 and a heat sink 6, etc., which are not limited here.
  • a plurality of third laser chips 223 are provided in the first tube shell 211, and the plurality of third laser chips 223 are connected in series.
  • the cathode and anode of the plurality of third laser chips 223 are respectively connected to the second pad 241 provided at the bottom of the first tube shell 211 through the wiring (such as the first wiring 23) in the first tube shell 211, the second pad 241 is electrically connected to the third pad 1311 of the substrate 100, and the third pad 1311 is electrically connected to the first pad 11 through the interconnection area 12, thereby realizing the electrical connection between the third laser chip and the substrate 100.
  • the wiring in the first tube shell 211 can be located in the side wall and the bottom wall of the tube shell.
  • a plurality of first laser chips 221 and a plurality of second laser chips 222 are arranged in the first tube shell 211, all the first laser chips 221 are connected in series, all the second laser chips 222 are connected in series, and the plurality of first laser chips 221 and the plurality of second laser chips 222 are separated from each other, the positive electrode and the negative electrode of the first laser chip 221 are electrically connected to the second pad 241 at the bottom of the second tube shell 212 through the wiring in the second tube shell 212, the second pad 241 is electrically connected to the third pad 1311 of the substrate 100, and the third pad 1311 is electrically connected to the third pad 1311 of the substrate 100, and the third pad 1311 is electrically connected to the third pad 1311 of the substrate 100.
  • the positive electrode and the negative electrode of the second laser chip 222 are electrically connected to the second pad 241 at the bottom of the second tube shell 212 through the wiring in the second tube shell 212, respectively.
  • the second pad 241 is electrically connected to the third pad 1311 of the substrate 100, and the third pad 1311 is connected to the corresponding first pad 11 through the interconnection area 12, thereby realizing the electrical connection between the first laser chip 221 and the substrate 100, and the electrical connection between the second laser chip 222 and the substrate 100.
  • the wiring in the second tube shell 212 is located in the side wall and the bottom wall of the tube shell.
  • a laser chip 203 is disposed in any tube shell 202, and the arrangement direction of the plurality of tube shells 202 is the same as the arrangement direction of the plurality of first pads 11.
  • any tube shell 202 includes two second pads 241 disposed side by side at least on the side close to the first pad 11, and the two second pads 241 are respectively connected to a group of first pads 11.
  • the light emitting device 2000 includes three tube shells 202, and any laser chip 203 is individually packaged in one tube shell 202, that is, the light emission colors of the multiple laser chips 203 in one tube shell 202 are the same and connected in series.
  • all the first laser chips 221 are arranged in the same tube shell 202, and all the first laser chips 221 are connected in series;
  • all the second laser chips 222 are arranged in the same tube shell 202, and all the second laser chips are connected in series;
  • all the third laser chips 223 are arranged in the same tube shell 202, and all the third laser chips 223 are connected in series.
  • Multiple first pads 11 are located on the same side of the three tube shells 202, and the multiple first pads 11 and the multiple tube shells 202 are arranged in the same direction.
  • Two second pads 241 are arranged on one side of any tube shell 202 close to the first pad 11, and the arrangement direction of the two second pads 241 is the same as the arrangement direction of the multiple first pads 11.
  • the two second pads 241 of any tube shell 202 are electrically connected to a corresponding group of first pads 11 .
  • connection pattern 13 includes three connection patterns 13
  • the substrate 100 includes three connection patterns 13 corresponding to the three tube shells 202
  • any connection pattern 13 includes two third pads 1311
  • the two third pads 1311 are close to one side of the plurality of groups of first pads 11, and are arranged side by side
  • any third pad 1311 is electrically connected to the corresponding first pad 11 through the interconnection region 12.
  • the plurality of third pads 1311 are respectively connected to the plurality of second pads 241 of the tube shell 202, and the second pad 241 is electrically connected to the laser chip 203 located in the tube shell 202 through the first trace 23, thereby realizing the electrical connection between the laser chip 203 and the corresponding first pad 11.
  • the tube shell 202 on the left is used to package the red laser chip, and the corresponding two second pads 241 are connected to the first positive polarity pad (R+) and the first negative polarity pad (R-) through the third pad 1311 and the interconnection area 12.
  • the tube shell 202 in the middle is used to package the blue laser chip, and the corresponding two second pads 241 are connected to the second negative polarity pad (B-) and the second positive polarity pad (B+) through the third pad 1311 and the interconnection area 12.
  • the tube shell 202 on the right is used to package the green laser chip, and the corresponding two second pads 241 are connected to the third positive polarity pad (G+) and the third negative polarity pad (G-) through the third pad 1311 and the interconnection area 12.
  • the plurality of second pads 241 may also be respectively arranged on the side of the tube shell 202 close to the first pad 11 and the side away from the first pad 11.
  • the plurality of third pads 1311 are respectively arranged on the side of the substrate body close to the first pad 11 and the side away from the first pad.
  • the interconnection area 12 may be arranged between the positioning hole and the tube shell 202 or between at least one of the plurality of tube shells 202 to electrically connect the plurality of third pads 1311 away from the first pad 11 with the plurality of third pads 1311 close to the first pad 11, so as to increase the routing width, thereby increasing the amount of current passing therethrough.
  • the first laser chip 221, the second laser chip 222, and the third laser chip 223 are located in the same tube shell 202, and the three laser chips 203 are arranged from left to right, and are respectively connected to the inside of the tube shell 202 through leads, and are electrically connected to the wiring inside the tube shell 202.
  • the third laser chip 223 is a red laser chip
  • the first laser chip 221 is a blue laser chip
  • the second laser chip 222 is a green laser chip.
  • the light-emitting component 200 also includes a plurality of antistatic devices 7.
  • the blue laser chip and the green laser chip need to be provided with an antistatic device 7, while the red laser chip material has a strong antistatic ability, so the red laser chip can omit the antistatic device 7.
  • the light emitting assembly 200 further includes a plurality of reflective prisms 5 and a plurality of heat sinks 6, a plurality of laser chips 203 and a plurality of antistatic devices 7 are arranged on the side of the heat sink 6 away from the substrate 100, a plurality of reflective prisms 5 are located on the light emitting side of the plurality of laser chips 203, and the reflective surfaces of the plurality of reflective prisms 5 are aligned and matched with the plurality of laser chips 203.
  • the plurality of laser chips 203 can be arranged corresponding to the plurality of heat sinks 6 respectively, or the plurality of laser chips 203 with the same luminous color can be arranged on the same heat sink 6, which is not limited here.
  • the side of the tube shell 202 close to the first pad 11 is the first side, and the second side and the third side are respectively located on the left and right sides of the first side and are adjacent to the first side.
  • Four second pads 241 are arranged side by side on the first side of the tube shell 202, one second pad 241 is arranged on the second side, and one second pad 241 is arranged on the third side.
  • third pads 1311 are provided on one side of the connection pattern 13 close to the first pad 11 (corresponding to the first side of the tube shell 202), and one third pad 1311 is provided on the left side and the right side corresponding to the four third pads 1311 (corresponding to the second side and the third side of the tube shell 202).
  • the six third pads 1311 are respectively connected to the six second pads 241, and the six third pads 1311 are respectively electrically connected to the corresponding first pads 11 through the interconnection region 12, thereby realizing the corresponding connection between the six second pads 241 and the six first pads 11.
  • connection relationship between the six second pads 241 and the six first pads 11 is as follows:
  • the second pad 241 on the second side is electrically connected to the third pad 1311 numbered 1
  • the third pad 1311 numbered 1 is electrically connected to the first positive polarity pad (R+) through the interconnection region 12.
  • at least one of the third pads 1311 numbered 9 or 10 and the third pad 1311 numbered 1 can be electrically connected to the first positive polarity pad (R+) through the same interconnection region 12.
  • the first second pad 241 at the left end of the first side is electrically connected to the third pad 1311 numbered 2, and the third pad 1311 numbered 2 is electrically connected to the first negative pad (R-) through the interconnection area 12.
  • the second second pad 241 at the left end of the first side is electrically connected to the third pad 1311 numbered 3, and the third pad 1311 numbered 3 is electrically connected to the second negative pad (B-) through the interconnection area 12.
  • the second second pad 241 at the right end of the first side is electrically connected to the third pad 1311 numbered 4, and the third pad 1311 numbered 4 is electrically connected to the second positive pad (B+) through the interconnection area 12.
  • the first second pad 241 at the right end of the first side is electrically connected to the third pad 1311 numbered 5, and the third pad 1311 numbered 5 is electrically connected to the third positive pad (G+) through the interconnection area 12.
  • the second pad 241 on the third side is electrically connected to the third pad 1311 numbered 6, and the third pad 1311 numbered 6 is electrically connected to the third negative pad (G-) through the interconnection region 12.
  • the third pads 1311 numbered 7 or 8 and the third pad 1311 numbered 6 can be electrically connected to the third negative pad (G-) through the same interconnection region 12.
  • the first positive pad (R+) can also be connected to at least one of the third pads 1311 numbered 1, 10, or 9 through the interconnection region 12; similarly, the third negative pad (G-) can be connected to at least one of the third pads 1311 numbered 6, 7, and 7 through the interconnection region 12.
  • the above structure can be arranged according to the relative positions and sizes of the substrate 100, the tube shell 202, and the positioning hole, and the present disclosure is not limited thereto.
  • the fourth side of the tube shell 202 opposite to the first side is provided with four second pads 241 arranged side by side.
  • Two of the four second pads 241 are connected to one third pad 1311 through the corresponding two third pads 1311 through the same interconnection area 12, and the third pad 1311 is connected to the second pad 241 on the second side, and the other two second pads 241 are connected to one third pad 1311 through the corresponding two third pads 1311 through the same interconnection area 12, and the third pad 1311 is connected to the second pad 241 on the third side.
  • the fourth side of the tube shell 202 is the side of the tube shell 202 away from the first pad 11, and the side is provided with four second pads 241.
  • four third pads 1311 are also provided on the side of the connection pattern 13 away from the first pad 11, and the four third pads 1311 are electrically connected to the four second pads 241 on the fourth side respectively.
  • the two third pads 1311 numbered 9 and 10 are electrically connected to a third pad 1311 (numbered 1) located on the left side of the connection pattern 13, so that the three third pads 1311 numbered 1, 9 and 10 are electrically connected to the first positive pad (R+) through the same interconnection area 12, so that the two second pads 241 on the fourth side of the tube shell 202 are connected to the second pad 241 on the second side through the same interconnection area 12.
  • the two third pads 1311 numbered 7 and 8 are connected to a third pad 1311 (numbered 6) located on the right side of the connection pattern 13, so that the three third pads 1311 numbered 6, 7 and 8 are electrically connected to the third negative pad (G-) through the same interconnection area 12.
  • the first positive pad (R+) and the third negative pad (G-) are respectively connected to the three third pads 1311, so that the two second pads 241 on the fourth side of the tube shell 202 can be connected to the second pad 241 on the third side through the same interconnection area 12.
  • the width of the interconnection area 12 can be increased, which is conducive to increasing the current.
  • Figures 44 and 46 only take the multiple third pads 1311 on the side of the substrate 100 away from the first pad 11 as an example, that is, numbers 9 and 10 are a group, 7 and 8 are a group, and the third pads 1311 numbered 9 and 10 are electrically connected to the third pad 1311 numbered 1, and the third pads 1311 numbered 7 and 8 are electrically connected to the third pad 1311 numbered 6, but it does not constitute a limitation on the light-emitting device 2000 provided in some embodiments of the present disclosure.
  • At least one of the four third solder pads 1311 (numbered 7, 8, 9 and 10) on the fourth side of the tube shell 202 can be electrically connected to the third solder pad 1311 numbered 1, and at least one of the remaining third solder pads 1311 can be electrically connected to the third solder pad 1311 numbered 6.
  • the third solder pads 1311 numbered 8, 9, and 10 are electrically connected to the third solder pad 1311 numbered 1, and the third solder pad 1311 numbered 7 is electrically connected to the third solder pad 1311 numbered 6, or, the third solder pad 1311 numbered 10 is electrically connected to the third solder pad 1311 numbered 1, and the third solder pads 1311 numbered 7, 8, and 9 are electrically connected to the third solder pad 1311 numbered 6, or, the third solder pads 1311 numbered 7, 8, 9, and 10 are electrically connected to the third solder pad 1311 numbered 1, or, the third solder pads 1311 7, 8, 9, and 10 are electrically connected to the third solder pad 1311 numbered 6, and it is not limited here.
  • the width of a single side of the first pad 11 is any value in the range of 1.3 mm to 1.7 mm.
  • the width of a single side of the first pad 11 is 1.3 mm, 1.4 mm, 1.5 mm, 1.6 mm, or 1.7 mm.
  • the spacing between two adjacent first pads 11 is any value in the range of 0.8 mm to 1.2 mm, for example, the spacing between adjacent first pads 11 is 0.8 mm, 0.9 mm, 1.0 mm, 1.1 mm, or 1.2 mm.
  • the width of the long side of the third pad 1311 is any value of 1.1 mm to 1.5 mm, for example, the width of the long side of the third pad 1311 is 1.1 mm, 1.2 mm, 1.3 mm, 1.4 mm or 1.5 mm.
  • the width of the short side is any value of 0.4 mm to 0.8 mm, for example, the width of the short side is 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm or 0.8 mm.
  • the spacing between adjacent third pads 1311 is any value of 0.1 mm to 0.5 mm, for example, the spacing between adjacent third pads 1311 is 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm or 0.5 mm.
  • the present disclosure does not limit the size (including length and width) of the tube shell 202, and the size of the tube shell 202 can be set according to the requirements of the light emitting device 2000.
  • the size of the tube shell 202 is 10.6 mm in length and 6.4 mm in width.
  • FIG48A is a flow chart of a method for preparing a light emitting device according to some embodiments. As shown in FIG48A, the method includes steps 901 to 905.
  • step 901 a laser chip 203 , a receiving structure 2021 , a cover plate 2022 , and a plurality of first sealing portions 2023 are provided.
  • step 902 the laser chip 203 is disposed in the accommodation structure 2021 .
  • a plurality of first sealing portions 2023 are disposed on a side of the cover plate 2022 facing the accommodating structure 2021 ; two adjacent first sealing portions 2023 among the plurality of first sealing portions 2023 are disposed at intervals.
  • step 904 the accommodating structure 2021 and the cover plate 2022 are connected by multiple first sealing parts 2023, so that any two adjacent first sealing parts 2023 are in contact with each other to connect the accommodating structure 2021 and the cover plate 2022, so as to close the gap at the connection between the accommodating structure 2021 and the cover plate 2022 to form the light-emitting component 200.
  • step 905 the light emitting component 200 is electrically connected to the substrate 100 .
  • the method further includes: disposing a second sealing portion 2024 on a side of the cover plate 2022 facing the accommodating structure 2021 .
  • FIG48B is another flow chart of a method for preparing a laser projection device according to some embodiments. In some embodiments, as shown in FIG48B , the method further includes step 913 .
  • step 913 a plurality of first sealing portions 2023 are connected to a second sealing portion 2024 .
  • FIG49 is another flow chart of a method for preparing a laser projection device according to some embodiments.
  • step 904 includes step 1001 and step 1002 .
  • step 1001 the plurality of first sealing portions 2023 are heated so that the plurality of first sealing portions 2023 are in a molten state.
  • step 1002 multiple first sealing portions 2023 are simultaneously connected to the containing structure 2021 , and pressure is applied to the multiple first sealing portions 2023 so that adjacent first sealing portions 2023 contact each other to close the gap at the connection between the containing structure 2021 and the cover plate 2022 .
  • Fig. 50 is another flow chart of a method for preparing a laser projection device according to some embodiments.
  • step 913 includes step 1101 and step 1102 .
  • step 1101 the number of first sealing portions 2023 , the distance between any two adjacent first sealing portions 2023 among the plurality of first sealing portions 2023 , and the radius of the first sealing portion 2023 are determined.
  • step 1102 the plurality of first sealing portions 2023 are connected to the second sealing portion 2024 according to the number of the first sealing portions 2023 , the distance between any two adjacent first sealing portions 2023 among the plurality of first sealing portions 2023 , and the radius of the first sealing portion 2023 .
  • a laser chip 203 a laser chip 203 , a receiving structure 2021 , a cover plate 2022 , a plurality of first sealing portions 2023 and a second sealing portion 2024 are provided respectively.
  • FIG51 is a structural diagram of a cover plate and a second sealing portion according to some embodiments.
  • a second sealing portion 2024 is provided at a second sealing area corresponding to a side of the cover plate 2022 facing the accommodating structure 2021.
  • the second sealing portion 2024 can be used to connect the first sealing portion 2023.
  • a metallization layer is prepared at the second sealing area.
  • the cover plate 2022 is used to form a tube shell 202 with the accommodating structure 2021 to achieve sealing of the laser chip inside the tube shell 202.
  • the material of the cover plate 2022 can be high-strength sapphire (Sapphire), or it can also be quartz (Quartz), glass (Glass), etc.
  • the second sealing portion 2024 is provided around the cover plate 2022, and the remaining area of the cover plate 2022 is a light-transmitting area.
  • the second sealing portion 2024 is combined with the first sealing portion 2023 to achieve high airtightness.
  • FIG52 is a structural diagram of a cover plate, a plurality of first sealing parts, and a second sealing part according to some embodiments. Then, as shown in FIG52 , the number of first sealing parts 2023, the spacing between the plurality of first sealing parts 2023, and the radius of the first sealing parts 2023 are determined according to the size of the tube shell 202, and the plurality of first sealing parts 2023 are connected to the second sealing part 2024 according to the number of first sealing parts 2023, the spacing between the plurality of first sealing parts 2023, and the radius of the first sealing parts 2023.
  • components or structures such as a laser chip 203, a steering component 204, and a heat sink are arranged in the housing structure 2021.
  • the laser chip 203 is configured to emit a light beam
  • the steering component 204 is configured to change the direction of the light beam.
  • the steering component 204 is a reflector.
  • the heat sink is configured to conduct the heat generated by the laser chip 203.
  • FIG53 is a structural diagram of a light emitting assembly according to some embodiments. As shown in FIG53 , the prepared cover plate 2022 and the receiving structure 2021 are aligned with each other, and the first sealing part 2023 is heated. Afterwards, pressure is applied to the cover plate 2022, and the multiple first sealing parts 2023 change their shapes under the action of pressure, fill the sealing area 300, and complete the sealing of the cover plate 2022 and the receiving structure 2021.
  • FIG54 is another structural diagram of a light-emitting device according to some embodiments.
  • the light-emitting component 200 is electrically connected to the substrate 100 to complete the preparation of the light-emitting device 2000.
  • the substrate 100 can not only be used to fix the light-emitting component 200, but also a printed circuit board (PCB) can be set inside the substrate 100 to realize the circuit interconnection function between the substrate 100 and the tube shell 202, and then the substrate 100 is electrically connected to the laser chip 203.
  • PCB printed circuit board
  • the tube shell 202 and the substrate 100 can be fixed by reflow soldering using a tin-silver-copper alloy, or the tube shell 202 and the substrate 100 can also be fixed by high-temperature pressure sintering of silver paste or copper paste.
  • the material of the substrate 100 can be metal materials such as oxygen-free copper and red copper.
  • the first sealing portion 2023 can be prefabricated on a large scale on the substrate corresponding to the cover plate 2022.
  • Figure 55 is a partial structural diagram of a cover plate according to some embodiments. As shown in Figure 55, the transmittance of the cover plate 2022 is increased by setting a transmissive film layer, and the cover plate 2022 is metallized and sputtered to form a second sealing portion 2024. Then the first sealing portion 2023 is prefabricated on the second sealing portion 2024. After completing all the processes (that is, after the cover plate 2022 and the accommodating structure 2021 are connected), the cover plate 2022 is cut into shape.
  • Metallization sputtering is a common surface coating technology that can form a metal film on the surface of the material. And it is achieved through a physical sputtering process.
  • any one of the disclosed technical solutions in the present disclosure can solve one or more of the above-mentioned technical problems to a certain extent and achieve the corresponding technical effects.
  • multiple disclosed technical solutions can also be combined into an overall solution to solve one or more of the above-mentioned technical problems and achieve the corresponding technical effects.
  • some of the disclosed technical solutions are combined into an overall solution, and combined with related technologies and deterioration solutions, but the solution can compensate for the deterioration trend through the technical means of the present disclosure, thereby solving one or more of the above-mentioned technical problems to a certain extent as a whole and achieving the corresponding technical effects.
  • each disclosed technical solution is combined into a complete technical solution, constituting an organic and inseparable overall solution, thereby solving the technical problems as a whole and achieving the corresponding technical effects.
  • Any technical solution disclosed in the present disclosure can respectively form a complete technical solution, and can solve one or more of the above-mentioned multiple technical problems and achieve corresponding technical effects, all belong to the content of the present disclosure, and belong to the content that is directly and unambiguously determined based on the content of the present disclosure.

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Abstract

一种发光装置（2000）及其制备方法和激光投影设备（10）。发光装置（2000）包括发光组件（200）和基板（100）。基板（100）包括基板本体、至少一个连接图案（13）、多个互连区域（12）以及多组第一焊盘（11）。发光组件（200）固定在至少一个连接图案上（13），且包括至少一个管壳（202）、导电结构（24）、第一走线（23）以及多种激光芯片（203、221、222、223）。至少一个管壳（202）的侧壁或底壁中的至少之一设有第一走线（23）。多种激光芯片（203、221、222、223）设于至少一个管壳（202）内，且与走线（23）电连接，多种激光芯片（203、221、222、223）发出至少两种不同颜色激光。

Description

发光装置及其制备方法、激光投影设备
本申请要求于2023年12月08日提交的、申请号为202311683844.6的中国专利申请的优先权；以及，于2024年01月22日提交的、申请号为202410089831.4的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及激光技术领域，尤其涉及一种发光装置及其制备方法和激光投影设备。
背景技术
随着生活质量的提高，人们对于高色彩度和高亮度的电视产品的需求逐年增加，激投影设备的优势展露无余。近年来便捷的激光投影设备备受市场的欢迎，小型化激光投影设备应运而生。
发明内容
本公开一些实施例提供一种发光装置及其制备方法、激光设备，用于解决激光芯片的使用数量受到驱动电路限制的问题，在增大激光芯片使用功率的同时，驱动电路的数量可以保存不变，可以有效提高驱动电路的工作效率，降低成本。
一方面，提供一种发光装置。所述发光装置包括基板和发光组件。所述基板包括基板本体、至少一个连接图案、多个互连区域以及多组第一焊盘。所述至少一个连接图案设于所述基板本体，且包括导电部。所述多个互连区域设于所述基板本体。所述多组第一焊盘设于所述基板本体，所述多组第一焊盘通过所述多个互连区域与所述导电部电连接，所述多组第一焊盘中的任一组第一焊盘包括两个极性不同的第一焊盘。所述发光组件固定在所述至少一个连接图案上，且包括至少一个管壳、导电结构、走线以及多种激光芯片。所述至少一个管壳的侧壁或底壁中的至少之一设有第一走线。所述导电结构设于所述至少一个管壳的朝向所述基板的一侧，且与所述第一走线以及所述导电部电连接。所述多种激光芯片设于所述至少一个管壳内，且与所述第一走线电连接，所述多种激光芯片发出至少两种不同颜色激光。在所述多种激光芯片中，同一种激光芯片与所述任一组第一焊盘电连接。
本公开一些实施例的发光装置包括基板和发光组件，发光组件固定在基板的连接图案上，且任一种激光芯片通过第一走线、导电结构、导电部以及互连区域与对应的两个第一焊盘电连接，这样，可以实现为不同出光颜色的激光芯片的单独供电，解决激光芯片的使用数量受到驱动电路的数量及成本限制的问题，使得在增加激光芯片数量的同时，驱动电路的数量保持不变，有效提高驱动电路的工作效率，降低成本。
另一方面，提供一种激光投影设备。所述激光投影设备包括光源组件、光学调制组件以及镜头。所述光源组件被配置为发出照明光束；所述光源组件包括所述发光装置；所述光学调制组件，被配置为将所述光源组件提供的照明光束进行调制以获得投影光束；所述镜头被配置为将所述投影光束进行成像。
本公开一些实施例的激光投影设备包括上述发光装置，可以实现为不同出光颜色的激光芯片的单独供电，解决激光芯片的使用数量受到驱动电路的数量及成本限制的问题，使得在增加激光芯片数量的同时，驱动电路的数量保持不变，有效提高驱动电路的工作效率，降低成本。
又一方面，提供一种发光装置的制备方法。所述发光装置包括基板、发光组件，所述发光组件包括激光芯片、第一容置结构、盖板以及多个第一密封部。所述方法包括：提供所述激光芯片、所述第一容置结构、所述盖板和所述多个第一密封部；将所述激光芯片设置在所述第一容置结构内；将所述多个第一密封部设置在所述盖板的朝向所述第一容置结构的一侧；所述多个第一密封部中的相邻两个第一密封部间隔设置；通过所述多个第一密封部连接所述第一容置结构与所述盖板，使得任意相邻的两个第一密封部之间相互接触以连接所述第一容置结构和所述盖板，以封闭所述第一容置结构和所述盖板之间连接处的缝隙，形成所述发光组件；将所述发光组件电连接至所述基板。
本公开一些实施例提供的发光装置的制备方法，通过多个相互分离的第一密封部密封第一容置结构与盖板，从而达到密封管壳中的激光芯片的目的，使得激光芯片与外界隔绝，这样，可以减少第一密封部的溢出，进而避免或减少孔洞，以及减少对于激光芯片的影响。又一方面，提供一种发光装置。所述发光装置由所述方法制备。
附图说明
为了更清楚地说明本公开一些实施例或相关技术中的实施方式，下文将对本公开一些实施例或相关技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本公开一些实施例，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。
图1为根据一些实施例的一种激光投影设备的结构图；
图2为根据一些实施例的激光投影设备中光源组件、光学调制组件和镜头的光路图；
图3为根据一些实施例的激光投影设备投影成像的原理图；
图4为根据一些实施例的微小反射镜片的工作示意图；
图5为相关技术中的一种发光装置的结构图；
图6为相关技术中的发光装置的另一种结构图；
图7为根据一些实施例的一种发光装置的结构图；
图8为根据一些实施例的发光装置的另一种结构图；
图9为根据一些实施例的发光装置的又一种结构图；
图10为根据一些实施例的盖板和多个第一密封部的一种结构图；
图11为根据一些实施例的盖板和多个第一密封部的另一种结构图；
图12为根据一些实施例的盖板和多个第一密封部的又一种结构图；
图13为根据一些实施例的一种容置结构的结构图；
图14为根据一些实施例的多个容置结构的结构图；
图15为根据一些实施例的发光组件的爆炸图；
图16为根据一些实施例的发光装置的又一种结构图；
图17为相关技术中发光装置的工作原理图；
图18为相关技术中多个激光芯片采用共阳极走线方式的电路图；
图19为相关技术中多个激光芯片采用共阴极走线方式的电路图；
图20为根据一些实施例的发光装置的又一种结构图；
图21为根据一些实施例的一种基板的结构图；
图22为根据一些实施例的一种基板的另一种结构图；
图23为根据一些实施例的一种发光装置的框图；
图24为根据一些实施例的一种管壳朝向基板一侧的结构图；
图25为根据一些实施例的一种发光装置的电路图；
图26为根据一些实施例的发光装置的又一种结构图；
图27为根据一些实施例的一种测温部件的电路图；
图28为根据一些实施例的基板的另一种结构图；
图29为根据一些实施例的基板的又一种结构图；
图30为根据一些实施例的基板的又一种结构图；
图31为根据一些实施例的一种管壳的电路图；
图32为根据一些实施例的发光装置的又一种结构图；
图33为根据一些实施例的第一管壳内的走线的结构图；
图34为根据一些实施例的第一管壳内的走线的俯视图；
图35为根据一些实施例的发光装置的又一种结构图；
图36为根据一些实施例的第二管壳内的走线的结构图；
图37为根据一些实施例的第二管壳内的走线的俯视图；
图38为根据一些实施例的发光装置的又一种结构图；
图39为根据一些实施例的多个管壳的结构图；
图40为根据一些实施例的基板的又一种结构图；
图41为根据一些实施例的发光装置的又一种结构图；
图42为根据一些实施例的管壳朝向基板一侧的另一种结构图；
图43为根据一些实施例的发光组件的结构图；
图44为根据一些实施例的基板的又一种结构图；
图45为根据一些实施例的一种管壳内的走线的俯视图；
图46为根据一些实施例的发光装置的又一种结构图；
图47为根据一些实施例的管壳朝向基板一侧的又一种结构图；
图48A为根据一些实施例的一种发光装置的制备方法的流程图；
图48B为根据一些实施例的一种激光投影设备的制备方法的另一种流程图；
图49为根据一些实施例的一种激光投影设备的制备方法的又一种流程图；
图50为根据一些实施例的一种激光投影设备的制备方法的又一种流程图；
图51为根据一些实施例的盖板和第二密封部的结构图；
图52为根据一些实施例的盖板、多个第一密封部以及第二密封部的结构图；
图53为根据一些实施例的一种发光组件的结构图；
图54为根据一些实施例的发光装置的又一种结构图；
图55为根据一些实施例的盖板的局部结构图。
具体实施方式
下面将结合附图，对本公开一些实施例进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开一些实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在描述一些实施例时，可能使用了“连接”及其衍伸的表达。术语“连接”应作为广义理解，例如，“连接”可以是固定连接，也可以是可拆卸连接，或成一体；可以是直接连接，也可以是通过中间媒介间接连接。这里所公开的实施例并不必然限制于本文内容。
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。
如本文中所使用，根据上下文，术语“如果”任选地被解释为意思是“当……时”或“在……时”或“响应于确定”或“响应于检测到”。类似地，根据上下文，短语“如果确定……”或“如果检测到[所陈述的条件或事件]”任选地被解释为是指“在确定……时”或“响应于确定……”或“在检测到[所陈述的条件或事件]时”或“响应于检测到[所陈述的条件或事件]”。
本文中“适用于”或“被配置为”的使用意味着开放和包容性的语言，其不排除适用于或被配置为执行额外任务或步骤的设备。
另外，“基于”的使用意味着开放和包容性，因为“基于”一个或多个所述条件或值的过程、步骤、计算或其他动作在实践中可以基于额外条件或超出所述的值。
如本文所使用的那样，“约”、“大致”或“近似”包括所阐述的值以及处于特定值的可接受偏差范围内的平均值，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即，测量系统的局限性)所确定。
如本文所使用的那样，“平行”、“垂直”、“相等”包括所阐述的情况以及与所阐述的情况相近似的情况，该相近似的情况的范围处于可接受偏差范围内，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即，测量系统的局限性)所确定。
图1为根据一些实施例的一种激光投影设备的结构图。
本公开的一些实施例提供一种激光投影设备10。如图1所示，该激光投影设备10包括光源组件500、光学调制组件600，以及镜头700。该光源组件500被配置为提供照明光束。该光学调制组件600被配置为利用图像信号对光源组件500提供的照明光束进行调制以获得投影光束。该镜头700被配置为将投影光束投射在屏幕或墙壁上成像。
光源组件500、光学调制组件600和镜头700沿着光束传播方向依次连接，各自由对应的壳体进行包裹。光源组件500、光学调制组件600和镜头700各自的壳体对各光学部件进行支撑并使得各光学部件达到预定的密封或气密要求。
如图1所示，光学调制组件600的第一端连接光源组件500，且光源组件500和光学调制组件600沿着激光投影设备10的照明光束的出射方向(参照图1中所示的M方向)设置。光学调制组件600的第二端和镜头700连接，且光学调制组件600和镜头700沿着激光投影设备10的投影光束的出射方向(参照图1中所示的N方向)设置。M方向与N方向大致垂直。这种连接结构一方面可以适应光学调制组件600中反射式光阀的光路特点，另一方面，还有利于缩短一个维度方向上光路的长度，利于激光投影设备10的结构排布。
例如，当将光源组件500、光学调制组件600和镜头700设置在一个维度方向(例如M方向)上时，该维度方向上光路的长度就会很长，从而不利于激光投影设备10的结构排布。
在一些实施例中，光源组件500可以时序性地提供三基色光(也可以在三基色光的基础上增加其他色光)。由于人眼的视觉暂留现象，人眼看到的是由三基色光混合形成的白光。或者，光源组件500也可以同时输出三基色光，以持续发出白光。光源组件500可以包括发光装置，该发光装置可发出至少一种颜色的激光光束，比如红色激光光束、蓝色激光光束或绿色激光光束。
图2为根据一些实施例的激光投影设备中光源组件、光学调制组件和镜头的光路图。图3为根据一些实施例的激光投影设备投影成像的原理图。
光源组件500发出的照明光束进入光学调制组件600。如图2和图3所示，光学调制组件600包括照明镜组501和光调制器件(或光阀)502。照明镜组501被配置为接收光源组件500提供的照明光束，并将该照明光束以设定的角度和方向传播至光调制器件502。光调制器件502被配置为对照明光束进行调制以得到投影光束，并将所述投影光束反射至镜头700中。
在一些实施例中，如图2和图3所示，照明镜组501包括匀光部件510，透镜组520，以及棱镜组550。该匀光部件510被配置为接收光源组件500提供的照明光束，并对该照明光束进行匀化。透镜组520被配置为将从匀光部件510出射的照明光束会聚至棱镜组550。棱镜组550被配置为将照明光束反射至光调制器件502。
在一些实施例中，如图2和图3所示，匀光部件510包括光导管5101。该光导管5101的出光口可以为矩形，从而对光斑具有整形效果。这样，从光导管5101出射的照明光束的光斑形状可以与光调制器件502的矩形受光面相匹配。或者，匀光部件510可以包括复眼透镜。该复眼透镜可以匀化入射的照明光束，并对照明光束进行整形，以输出矩形光斑。
在一些实施例中，如图2和图3所示，照明镜组501还包括反射镜530。反射镜530位于透镜组520的出光侧，且被配置为将从透镜组520出射的照明光束反射至棱镜组550。
在一些实施例中，如图3所示，光调制器件502包括数字微镜器件(Digital Micromirror Device，DMD)540。
光学调制组件600中，DMD 540是核心部件，其被配置为利用图像信号对光源组件500提供的照明光束进行调制。也就是说，DMD 540控制照明光束针对待投影图像的不同像素显示不同的亮度和灰阶，以最终形成光学图像。
图4为根据一些实施例的微小反射镜片的工作示意图。如图4所示，微小反射镜片2401在负的偏转角度反射出的光，称之为OFF光，OFF光为无效光。
随着发光装置的小型化发展趋势明显，产品的尺寸不断迭代减小，随之而来的便是发光装置的密封难度增大，目前的焊接方式难以实现高气密性，且存在焊料溢出、玻璃应力等问题。玻璃应力可以指在焊接过程中，高能量激光束会快速加热焊接区域，导致焊接部位局部热膨胀，此时，由于玻璃的热传导性较差，焊接区域内外温度差异较大，可能导致局部热应力。
图5为相关技术中的一种发光装置的结构图。图6为相关技术中的发光装置的另一种结构图。
通常，如图5和图6所示，发光装置1000包括基板1001和至少一个发光组件2001。发光组件2001包括准直部201(如准直透镜)、管壳2020、激光芯片2030以及转向部件204(如反射棱镜)。激光芯片2030和转向部件204分别设置在管壳2020内部。管壳2020包括容置结构2021和盖板2022，盖板2022与容置结构2021相互连接形成密封空间。该密封空间被配置为容置激光芯片2030和转向部件204。
如图5和图6所示，至少一个发光组件2001包括多个发光组件2001。多个发光组件2001沿基板1001的长度方向均匀间隔排列。通过低温烧结工艺利用纳米金属浆料将激光芯片2030和转向部件204分别固定在管壳2020内。经过烧结后的激光芯片2030的导热性能、高温下的机械可靠性分别有很大提升。转向部件204被配置为将激光芯片2030发出的光束偏折90°，以使光束沿垂直于基板1001的方向出射，经过反射后的光束透过盖板2022，最终经准直部201准直后出射。
激光芯片2030为有源器件(Active Devices)，需要封装在无尘、干燥、且高气密性的空间中，以阻挡水汽、氧气进入该空间中，从而以保证发光装置1000长期运转的可靠性。金锡合金焊料是对管壳2020进行气密性封装的一种常用的钎料(Solder)，金锡合金的强度、浸润性良好。该浸润性可以指金锡合金与一材料的表面接触时，金锡合金在该材料的表面形成一层均匀且密实的润湿层的能力。该种润湿层可以迅速扩展和均匀覆盖该材料的表面，填满微小孔隙和凹陷，形成稳定的接触界面。
如图6所示，发光组件2001还包括焊片205。焊片205可预先由金锡合金焊料制备，焊片205的厚度可以根据需求进行调整，且焊片205的厚度大致均匀。
通常，在预先通过金锡合金焊料制备焊片205产生共晶合金以实现密封的过程中，要求在焊接面(例如，盖板2022与容置结构2021的接触面中的至少一部分)镀金，当温度升高至焊料的熔点以上后，焊料融化并填充进盖板2022与容置结构2021之间的缝隙中，最终实现气密。焊片205通常预制在盖板2022处，在焊接的过程中，在焊片205与容置结构2021相接触后，对焊片205进行加热，从而完成焊接。由于当焊片205融化，且被施加一部分压力时，处于熔融状态的焊料极容易溢出密封区域(如盖板2022与容置结构2021的接触区域)，因此，焊料不足，容易形成焊接空洞。焊接空洞是指在焊接过程中未完全填充焊缝而形成的孔洞或空隙。并且，焊料的溢出也会导致焊料内溢至所述密封空间中，从而影响激光芯片2030。
为了解决上述问题，本公开一些实施例提供了一种发光装置2000。该发光装置2000包括多个第一密封部。相邻的两个第一密封部之间通过自身物体形态的改变而相互接触，以封闭容置结构和盖板从而增加焊接的气密性，防止焊料溢出，避免影响激光芯片。
图7为根据一些实施例的一种发光装置的结构图。如图7所示，发光装置2000包括基板100和发光组件200。基板100包括电连接结构。发光组件200固定在基板100的一侧。基板100被配置为承载、固定发光组件200，以及与发光组件200电连接，以为发光组件200提供特定的电信号，从而实现发光组件200的发光。发光组件200包括管壳202、激光芯片和导电结构。激光芯片设置于管壳202内，导电结构设于管壳202的朝向基板100的一侧，且与电连接结构相连。这样，发光组件200和基板100可以通过所述导电结构和所述电连接结构实现电连接。
如图7所示，管壳202包括容置结构2021、盖板2022以及多个第一密封部2023。容置结构2021设置在基板100，容置结构2021的远离基板100的一侧凹陷，以形成空腔。盖板2022盖设于容置结构2021，以封闭所述空腔形成密封空间。多个第一密封部2023设置于容置结构2021与盖板2022之间。多个第一密封部2023被配置为连接容置结构2021和盖板2022，以封闭容置结构2021和盖板2022之间连接处的缝隙。
需要说明的是，在盖板2022与容置结构2021焊接前，多个第一密封部2023之间相互分离，且多个第一密封部2023间隔设置在盖板2022的朝向容置结构2021的一侧。当盖板2022与容置结构2021焊接时，相邻的两个第一密封部2023之间根据自身物体形态的改变而相互接触，以封闭容置结构2021和盖板2022之间连接处的缝隙。所述物体形态可以包括固态、液态等。
例如，当盖板2022与容置结构2021焊接时，相邻的两个第一密封部2023因加热而融化，由固态变为液态，从而相邻的两个第一密封部2023互相接触，以封闭容置结构2021和盖板2022连接处的缝隙。
在本公开一些实施例中，通过多个第一密封部2023封闭容置结构2021与盖板2022，以使得设置在管壳202内的激光芯片与外界隔绝，可以保证发光装置2000长时间可靠的运行。多个第一密封部2023之间相互分离，任一个第一密封部2023为一个独立的结构。在多个第一密封部2023由固态变化为液态后，相邻的两个第一密封部2023之间通过自身的形状改变而相互接触，进而达到封闭容置结构2021和盖板2022的连接处的缝隙目的。
相比于相关技术中通过预制焊片205的方式密封容置结构2021与盖板2022，本公开一些实施例通过多个第一密封部2023封闭容置结构2021与盖板2022，可以防止因第一密封部2023的溢出而导致形成焊接空洞，可以提升气密性。另外，也可以防止第一密封部2023的溢出而影响激光芯片。
图8为根据一些实施例的发光装置的另一种结构图。在一些实施例中，如图8所示，发光装置2000还包括第二密封部2024。多个第一密封部2023在盖板2022所在平面上的正投影，与，第二密封部2024在盖板2022所在平面上的正投影至少部分交叠。图8中以第二密封部2024设置在盖板2022的朝向容置结构2021的一侧为例。第二密封部2024满足以下至少之一：第二密封部2024设置在盖板2022的朝向容置结构2021的一侧，且位于盖板2022与多个第一密封部2023之间，或，第二密封部2024设置在容置结构2021的朝向盖板2022的一侧，且位于容置结构2021与多个第一密封部2023之间。
在一些实施例中，第二密封部2024可以是一种镀膜结构，例如，金属化层。例如，该金属化层包括钛(Ti)、铂(Pt)或金(Au)中的至少一种材料，或者，镍(Ni)或Au中的至少一种材料，或者，铬(Cr)或金(Au)中的至少一种材料。多个第一密封部2023可以设于第二密封部2024，多个第一密封部2023与第二密封部2024相互配合，以达到稳定地固定盖板2022与容置结构2021、和封闭容置结构2021和盖板2022的连接处的缝隙目的。
图9为根据一些实施例的发光装置的又一种结构图。在一些实施例中，如图9所示，发光装置2000还包括两个密封区域300。该两个密封区域300分别为第一密封区域和第二密封区域。第一密封区域设于容置结构2021的靠近盖板2022的一侧；多个第一密封部2023设于第一密封区域。第二密封区域与第一密封区域对应设置，第二密封区域设于盖板2022的靠近容置结构2021的一侧，多个第一密封部2023设于第二密封区域。所述第二密封区域在基板100所在平面上的正投影，与，所述第一密封区域在基板100所在平面上的正投影至少部分交叠。第一密封区域和第二密封区域分别为金属化层。第一密封部2023在第一密封区域与第二密封区域，以封闭容置结构2021和盖板2022的连接处的缝隙。
在一些实施例中，第一密封区域可以包括第二密封部2024。第二密封区域可以包括第二密封部2024。例如，在第二密封部2024设置在盖板2022的靠近容置结构2021的一侧的情况下，第二密封区域包括第二密封部2024；在第二密封部2024设置在容置结构2021的靠近盖板2022的一侧的情况下，第一密封区域包括第二密封部2024。
在发光装置2000还包括第一密封区域和第二密封区域的情况下，第二密封部2024至少满足以下之一：第二密封部2024在盖板2022的靠近容置结构2021的表面上的正投影在第二密封区域内，或者，第二密封部2024在容置结构2021的靠近盖板2022的表面上的正投影位于第一密封区域内。
在一些实施例中，密封区域300可以与发光装置2000中的电路结构(如，所述导电结构和所述电连接结构)相互绝缘。通过密封区域300，可以增加第一密封部2023与盖板2022、容置结构2021的连接的可靠性。在一些实施例中，可以采用与图8中类似的方案，并根据密封区域300处的材质、表面的平整度、绝缘性等分别做出特定的设置。这样，可以增加密封容置结构2021与盖板2022的稳定性。
图10为根据一些实施例的盖板和多个第一密封部的一种结构图，图11为根据一些实施例的盖板和多个第一密封部的另一种结构图。在一些实施例中，如图10和图11所示，多个第一密封部2023设置于第二密封区域处，第一密封部2023呈半球形，且相邻两个第一密封部2023之间具有间隙。
如图10和图11所示，第一密封部2023是一种半球形的金属焊球，第一密封部2023的材料可以是金锡合金。设置在盖板2022上的相邻的两个金属焊球之间具有间隙。由于受到压力的作用，金属焊球会改变自身的形状，相邻两个金属焊球沿互相靠近的方向上延展而相互接触，达到封闭盖板2022与容置结构2021的目的。经过压力作用后的金属焊球可以呈现圆饼形状。
相比于相关技术中的通过焊片205焊接的方式，金属焊球通过延展的方式相互接触进而封闭容置结构2021与盖板2022，这样，可以防止焊料溢出，进而防止产生焊接空洞以及溢出的焊料影响激光芯片203。
图12为根据一些实施例的盖板和多个第一密封部的又一种结构图。在一些实施例中，如图12所示，密封区域300为环形结构。定义密封区域300的表面积为S，容置结构2021与盖板2022之间的间距为H，多个半球形的第一密封部2023的数量为M，半球形的第一密封部2023的半径为R，则密封区域300的表面积S、容置结构2021与盖板2022之间的间距H、多个第一密封部2023的数量M以及第一密封部2023的半径R满足公式(1)。
可以理解的是，公式(1)表征的意义为：多个第一密封部2023的总体积大于或等于焊接区域的容积。该焊接区域为由密封区域300、容置结构2021以及盖板2022所限定的区域。
如图12所示，采用半球形的第一密封部2023将容置结构2021与盖板2022进行共晶焊接，可以减少第一密封部2023的未填充的区域，处于高温熔融状态的第一密封部2023可以填充密封区域300，因此，可以保证气密效果。
在一些实施例中，第一密封部2023的半径R、相邻两个第一密封部2023之间的距离与在受压力以及焊接后所展开的第一密封部2023的厚度相关。如图12所示，定义任一个密封区域300的外边长分别为第一长度L1和第一宽度L3，内边长分别为第二长度L2和第二宽度L4，多个第一密封部2023的总体积为V，若第一密封部2023正好填满容置结构2021与盖板2022之间的密封区域300对应的空间，则多个第一密封部2023的总体积V满足公式(2)和公式(3)。
V＝V1        公式(2)
V1＝S×H＝(L1×L3-L2×L4)×H         公式(3)
在理想情况下，本公开一些实施例的多个第一密封部2023的总体积V等于目标体积V1，考虑到第一密封部2023的总体积的精确度存在误差，所以可以设置多个第一密封部2023的总体积V略大于目标体积V1，在一些实施例中，第一密封部2023的总体积V可以最多超出目标体积V1的10％。任一个球形的第一密封部2023的体积V2满足公式(4)。
任一个半球形的第一密封部2023的体积V3为球形的第一密封部2023的体积的一半，如满足公式(5)。
因此，在多个第一密封部2023分别呈半球形的情况下，多个第一密封部2023的总体积V满足公式(6)和公式(7)。

(1+10％)×S×H≥V≥S×H          公式(7)
在一些实施例中，定义任一个密封区域300的周长为L，相邻两个半球形的第一密封部2023的间距为A，则密封区域300的周长L、相邻两个半球形的第一密封部2023的间距A以及第一密封部2023的数量M满足公式(8)。
A×M＝L      公式(8)
如图12所示，密封区域300的周长L近似为第一长度L1、第二长度L2、第一宽度L3以及第二宽度L4之和(L＝L1+L2+L3+L4)，定义相邻两个半球形的第一密封部2023的间距A为相邻两个第一密封部2023的靠近盖板2022的一面的圆心之间的间距。为了使得多个第一密封部2023填满密封区域300，密封区域300的周长L、相邻两个第一密封部2023的靠近盖板2022的一面的圆心之间的间距A以及第一密封部2023的数量M满足公式(8)。
根据公式(6)、公式(7)和公式(8)可以发现，在容置结构2021与盖板2022之间的间距H和密封区域300大小确定的情况下，可以得到第一密封部2023的数量M与第一密封部2023的半径R的关系。容置结构2021与盖板2022之间的间距H可以指在封闭容置结构2021与盖板2022后，第一密封部2023的厚度，以下简称密封厚度。密封厚度也可以为在垂直于基板100所在平面的方向上，盖板2022与容置结构2021之间的间距。
在一些实施例中，在制备第一密封部2023过程中，第一密封部2023的半径R大于或等于5μm，且小于或等于300μm(5μm<r<300μm)。例如，第一密封部2023的半径R为5μm、100μm、200μm、250μm或300μm。第一密封部2023的半径R的尺寸对应于不同的密封厚度。
对于体积小于第一预设阈值的管壳202，在密封过程中，密封厚度满足以下至少之一：大于或等于20μm，或，小于或等于50μm。例如，密封厚度为20μm、25μm、30μm、40μm或50μm。对应地，半球形第一密封部2023的半径满足以下至少之一：大于或等于40μm，或，小于或等于100μm。例如，半球形第一密封部2023的半径为40μm、50μm、70μm、90μm或100μm。
对于体积大于第一预设阈值的管壳202，密封厚度满足以下至少之一：大于或等于50μm，或，小于或等于100μm。例如，密封厚度为50μm、60μm、70μm、90μm或100μm。这样，可以增大密封强度及第一密封部2023与盖板2022、容置结构2021之间的接触面积。在此情况下，第一密封部2023的半径满足以下至少之一：大于或等于120μm，小于或等于180μm。例如，半球形第一密封部2023的半径为120μm、140μm、150μm、170μm或180μm。通过调整对盖板2022的压力及相邻的第一密封部2023之间的间距，可得到所需密封厚度。在半球形的第一密封部2023的半径范围(如，大于或等于40μm，且小于或等于100μm；大于或等于120μm，小于或等于180μm)中，通过控制密封过程中的压力，可达到理想的焊接目的。这样，当采用金锡合金材料的第一密封部2023进行密封时，随着温度的增加，第一密封部2023的扩散也可以均匀致密。
在半球形的第一密封部2023的半径在大于或等于5μm，小于或等于40μm的情况下，例如，半球形的第一密封部2023的半径为5μm、15μm、20μm、35μm或40μm，一般要求的密封接触面积小、密封厚度薄。在此情况下，很容易造成密封区域300的焊点虚焊、假焊等现象，降低发光装置2000的可靠性以及环境适应性能力。因此，一般针对单芯片封装的管壳202，该管壳202的尺寸和密封区域300的面积小，第一密封部2023的上述半径大小合适该管壳202。
在半球形的第一密封部2023的半径大于或等于200μm，小于或等于300μm的情况下，例如，半球形的第一密封部2023的半径为200μm、220μm、250μm、280μm或300μm，在密封过程中第一密封部2023容易溢出，需要严格控制压力、温度等参数，增大密封工艺的难度。在此情况下，由于第一密封部2023的半径大，密封过程中难以控制密封后的密封厚度，造成第一密封部2023的厚度不均。并且，由于第一密封部2023体积的增大，密封成本也会增加。因此，在针对大尺寸管壳202密封，且密封区域300大的情况下，第一密封部2023采用上述半径大小可以完全填充封焊区域。
在第一密封部2023的半径、管壳202的尺寸确定的情况下，通过调整第一密封部2023的数量同样可以实现所需求的密封厚度。一般来说，在管壳202的尺寸确定的情况下，第一密封部2023的半径越小，所需要的第一密封部2023数量越多。在一些实施例中，在第一密封部2023的数量在100至300之间的情况下，第一密封部2023的数量少，可以使用半径大于第二预设阈值的第一密封部2023进行密封。针对一些小尺寸的管壳202，在第一密封部2023半径小的情况下，第一密封部2023的数量可以在4000个至8000个之间。
在一些实施例中，第一密封部2023数量在500个至2000个的范围内。在此数量下，可以通过调整第一密封部2023的半径，获得均匀的密封厚度，最终可以得到合适的密封效果。
前文主要以第一密封部2023呈半球形为例，当然，在一些实施例中，第一密封部2023还可以呈其他形状，例如，正方体、长方体、圆球、椭球、四面体等。
以第一密封部2023呈圆球形为例，第一密封部2023的半径为R，任一个第一密封部2023的体积满足公式(9)。
因此，在多个第一密封部2023分别呈球形的情况下，可以设置多个第一密封部2023的总体积V满足公式(10)和公式(11)。
其他形状的预制的多个第一密封部2023的总体积的确定过程与过程类似，在此不再赘述。
图13为根据一些实施例的一种容置结构的结构图。图14为根据一些实施例的多个容置结构的结构图。如图13和图14所示，容置结构2021包括侧壁208和底板。侧壁208设置在底板上。侧壁208可以由陶瓷材料成型，也可以由金属合金材料成型。底板为激光芯片203及转向部件204的贴片区域。考虑到贴片精度及散热效果，底板的平整度要求高，因此，底板可采用无氧铜、金刚石等散热较好的材料。底板与侧壁208可通过烧结形成容置结构2021的整体结构。
如图13和图14所示，容置结构2021还包括至少两个台阶部206。至少两个台阶部206设于侧壁208的沿容置结构2021的长度方向的两侧。任一个台阶206设置有金属膜，进而使台阶部206电连接至底板，以实现发光组件200与基板100的电连接。容置结构2021还包括定位部207。定位部207设于台阶部206的沿容置结构2021的宽度方向的中间部分，且定位部207可以作为识别区域。例如，通过两侧的定位部207构建全局坐标系。至少两个台阶部206中间的矩形部分为电路隔离区域，使得至少两个台阶部206与底板之间的电连接相互独立。侧壁208的一侧可以增加识别区，以在侧壁208与基板100安装时辨认侧壁208的朝向或方向。
激光芯片203可以通过共晶工艺焊接于热沉，热沉的主要材料可以为氮化铝(Aluminum Nitride，ALN)、碳化硅(SiC，Silicon Carbide)等。激光芯片203在快轴所在方向的波导尺寸小，使得输出光束的光束质量在接近衍射极限，且会产生大的发散角。根据激光的快轴所在的方向的波导层的尺寸不同，光束的发散角可在40°～60°之间。激光芯片203在慢轴所在方向的发散角可在6°～15°之间，光束质量差，有源区的尺寸一般在100μm～500μm之间，快轴所在的方向与慢轴所在的方向相互垂直。
转向部件204可以将激光芯片203发出的光束的光路偏折90°出射。转向部件204的材料可以是硼硅酸玻璃(Borosilicate Glass)，石英，硅(Silicon)等材料，转向部件204的表面可以设置增透膜以提高反射率。由于激光芯片203在快轴方向的发散角度大，因此，转向部件204仅能将激光芯片203发出的大部分光束折反，另外少部分的光束并未形成有效光，而是从转向部件204侧边出射形成杂散光束。
图15为根据一些实施例的发光组件的爆炸图。在一些实施例中，如图15所示，发光组件200还包括至少一个准直部201。至少一个准直部201设于盖板2022。准直部201主要被配置为对激光芯片203发出的光束的发散角进行处理。因此，准直部201需要针对激光芯片203的发散角和发光装置2000的光程进行设计调整。准直部201的曲率可以针对任一个发光装置2000的不同特性进行调整，也可以使准直部201曲率保持相同，以便加工的便捷性及降低成本。
在一些实施例中，准直部201的面型可以为非球面型、自由曲面型，也可以是采用菲涅尔结构实现压缩发散角的功能。菲涅尔结构类似菲涅尔透镜(Fresnel Lens)。需要说明的是，准直部201的面型参数与光束的光程相关。因此，在发光装置2000中，激光芯片203的位置、转向部件204的位置，以及盖板2022与容置结构2021之间的间距分别需要设置在预设的公差范围内。准直部201的个数与发光组件200的个数相同。
在一些实施例中，如图15所示，至少一个准直部201包括多个准直部201。可以通过在任一个准直部201的四个角部点胶的方式实现准直部201的固定，且点胶位置需要避开光学有效区。光学有效区可指是准直部201能够有效地处理和传输光的区域。激光芯片203发出的光束经过转向部件204反射后，激光的快轴方向为平行于准直部201的短边方向，激光的慢轴方向平行于准直部201的长边方向，此时，多个准直部201沿基板100的长度方向排列。
图16为根据一些实施例的发光装置的又一种结构图。在完成封闭容置结构2021与盖板2022连接处之间的间隙后，封装完成的发光组件200可以再次进行分离。在将盖板2022与容置结构2021再次分离后，如图16所示，通过对密封区域300进行观察，可以看出第一密封部2023位置处形成的金属间化合物(Intermetallic Compounds)的分布形状为圆形。由于第一密封部2023位置处的金属间化合物的厚度较其他区域厚，因此，可以清晰观察到第一密封部2023对应区域与焊料未填充的区域呈现不同颜色。
下面介绍本公开一些实施例中的发光装置。
小型化激光投影设备的广泛应用增加了小型化发光装置的设计难度，通常，为了减少发光装置中各个部件相互连接所需要的走线，节省空间，发光装置中的多个激光芯片通常采用共阳极或共阴极的走线方式。这里，共阳极的走线方式可以指多个激光芯片的阳极连接至同一个电源的正极，而多个激光芯片的阴极分别连接至发光装置的多个驱动电路；共阴极的走线方式可以指多个激光芯片的阴极连接至同一个电源的负极，而多个激光芯片的阳极分别连接至发光装置的多个驱动电路。
然而，采用共阳极的走线方式会导致难以精确控制激光芯片的输入电压，在造成电能损耗的同时还容易损坏激光芯片；采用共阴极的走线方式虽然可以有效控制激光芯片的输入电压以及降低功耗，但当需要多个激光芯片同时工作来增加亮度时，难以解决因驱动电路的数量增加所带来的成本增加的问题。
相关技术中，如图17所示，驱动电路板用于向发光装置传输驱动信号，电源板用于向发光装置供电，发光装置在通电状态下，根据接收到的驱动信号发出三种颜色的激光(如，红色激光、蓝色激光以及绿色激光)。图18为发光装置中多个激光芯片采用共阳极走线方式的电路图，图19为发光装置中多个激光芯片采用共阴极走线方式的电路图，如图18和图19所示，每三个激光芯片(如红色激光芯片R、绿色激光芯片B以及蓝色激光芯片B)组成一个发光装置，该发光装置可以发出红色激光、绿色激光以及蓝色激光。图中的R_T、G_T和B_T(如R_T0、G_T0、B_T0；R_T1、G_T1、B_T1；R_T2、G_T2、B_T2)代表发光装置的驱动电路。当需要多个发光装置同时工作以增加亮度时，随着发光装置数量的增加，驱动电路的数量随之增加，从而导致成本增加。
为了解决上述问题，本公开一些实施例提供了一种发光装置和激光设备。该发光装置包括基板和发光组件，发光组件固定在基板的连接图案上，且发出同一颜色的激光芯片之间相互串联，并通过第一走线、导电结构、导电部以及互连区域与对应的两个极性不同的第一焊盘电连接，这样，可以为发出不同颜色激光的激光芯片分别供电，解决激光芯片的使用数量受到驱动电路的数量及成本限制的问题，使得在增加激光芯片数量的同时，驱动电路的数量保持不变，有效提高驱动电路的工作效率，降低成本。
下文结合附图，对本公开一些实施例的发光装置进行说明。
在一些实施例中，如图20所示，发光装置2000包括基板100和发光组件200，发光组件200位于基板100的一侧。如图21和图22所示，基板100包括至少一个连接图案13、多个第一焊盘11和多个互连区域12以及基板本体，至少一个连接图案13、多个第一焊盘11和多个互连区域12分别设于基板本体的朝向发光组件200的一侧。
在一些实施例中，基板本体内设有多个第二走线，且所述多个第二走线形成多个互连区域12。
在一些实施例中，至少一个连接图案13设于所述基板本体的朝向发光组件200的一面。
在一些实施例中，多个互连区域12为金属膜层，多个第一焊盘11通过多个互连区域12与至少一个连接图案13电连接。多个第一焊盘11与驱动电路以及电源连接。例如，多个第一焊盘11可通过连接器、柔性基板、环氧玻璃基板、弹簧式接线端子等与电源连接。
在一些实施例中，多个第一焊盘11包括多组第一焊盘11，例如，任一组第一焊盘11包括两个第一焊盘11。任一组第一焊盘11包括正极性焊盘和负极性焊盘。
在一些实施例中，多组第一焊盘11满足以下之一：在基板100所在平面内，多组第一焊盘11均位于所述基板本体的同一侧，且靠近基板本体的边缘；所述多组第一焊盘11中的相同极性的第一焊盘11相邻设置；以及任一组第一焊盘11中的不同极性的第一焊盘11相邻设置。
在一些实施例中，任一个第一焊盘11为金属层，且呈矩形。
如图21和图22所示，至少一个连接图案13中的任一个连接图案13包括固定部132，固定部132设于所述基板本体，固定部132对应于至少一个管壳202的底壁。例如，固定部132与至少一个管壳202的底壁电连接。发光组件200固定于固定部132，固定部132的材质可以为金属，且固定部132的形状可以为矩形。连接图案13还包括导电部131，导电部131与发光组件200电连接。图21中黑色粗线框标记区域即为发光组件200在基板100上固定的位置。
在一些实施例中，如图20所示，发光组件200包括至少一个管壳202。至少一个管壳202中的任一个管壳202包括管壳底壁、管壳侧壁和密封玻璃，管壳底壁与基板100所在的平面平行，管壳侧壁与基板100所在的平面垂直，密封玻璃位于管壳侧壁的远离管壳底壁的一侧，管壳底壁、管壳侧壁和密封玻璃形成密封空间。管壳底壁的下表面连接于固定部132。管壳底壁或管壳侧壁中的至少之一可设置走线，且管壳底壁或管壳侧壁的至少之一可采用陶瓷材料制备。
在一些实施例中，至少一个管壳202的侧壁的材质为陶瓷，至少一个管壳101的底壁的材质为金属。
在一些实施例中，如图23所示，发光装置2000还包括电耦合组件400，电耦合组件400设置在所述基板本体的靠近多组第一焊盘11的区域，电耦合组件400和多组第一焊盘111均电连接，且电耦合组件400被配置为连接外部电信号
例如，如图20所示，发光组件200还包括第一走线23，第一走线23设于管壳侧或管壳底壁中的至少之一。
如图24所示，发光组件200还包括导电结构24和第一金属膜25(金属膜)。导电结构24和第一金属膜25设于管壳202的朝向基板本体的一侧(即管壳底壁的下表面)，导电结构24的位置与导电部131的位置对应，且导电结构24与导电部131电连接。第一金属膜25的位置与固定部132的位置对应，且第一金属膜25与固定部132连接。
在一些实施例中，如图20和图26所示，发光组件200还包括多个台阶部206。多个台阶部206设于任一个管壳202内，且位于该管壳202的长度方向的两侧。例如，如图26所示，多个台阶部206包括四个台阶部206，四个台阶部206中的两个台阶部206位于第一管壳211内，另外两个台阶部206位于第二管壳212内。台阶部206的上表面(即，远离基板100的表面)设有第二金属膜，该第二金属膜通过第一走线23与导电结构24电连接。
在一些实施例中，如图20所示，发光组件200还包括多个激光芯片203，多个激光芯片203位于管壳202内。例如，多个激光芯片203位于管壳底壁、管壳侧壁和密封玻璃形成的密封空间内。多个激光芯片203包括至少两种不同出光颜色的激光芯片203，任一种激光芯片203对应一组第一焊盘11。
多个激光芯片203可通过第一走线23分别与导电结构24电连接，导电部131通过多个互连区域12与多个第一焊盘11电连接，这样，可以实现多个激光芯片203与多个第一焊盘11电连接。
以发光组件200包括第一走线23为例，同一种激光芯片203可通过第一走线23、导电结构24、导电部131以及互连区域12与对应的一组第一焊盘11电连接，从而实现多种激光芯片203的分别单独供电。
例如，如图20所示，多个激光芯片203包括第一种激光芯片221和第二种激光芯片222，第一种激光芯片221发出蓝色激光，第二种激光芯片222发出红色激光或绿色激光。由于第一种激光芯片221与对应的一组第一焊盘11电连接，第二种激光芯片222与对应的另一组第一焊盘11电连接，因此基板100包括至少四个第一焊盘11。
需要说明的是，图20中以发光装置2000包括出光颜色不同的两种激光芯片203为例进行说明，但并不构成对本公开一些实施例的发光装置2000的限定。在其他一些实施中，多个激光芯片203还可以包括三种激光芯片203，该三种激光芯片203分别发出不同颜色的激光，该三种激光芯片203分别通过第一走线23与对应的一组第一焊盘11电连接，以实现对三种激光芯片203中任一种激光芯片203的单独供电，本公开对激光芯片203的种类不作限定。
例如，如图25所示，发光装置2000包括红色激光芯片(如，R、R1和R2)、绿色激光芯片(如，G、G1和G2)以及蓝色激光芯片(如，B、B1和B2)三种激光芯片203。需要说明的是，红色激光芯片可以发出红色激光，绿色激光芯片可以发出绿色激光，蓝色激光芯片可以发出蓝色激光。由于任一种激光芯片203与对应的电源和驱动电路(如，R_T0、G_T0和B_T0)串联，因此，无论激光芯片203的数量如何增加，驱动电路的数量可以保持不变，这样，可以解决激光芯片203的使用数量受到驱动电路限制的问题，还可以有效提高驱动电路的工作效率，降低成本。
在一些实施例中，基板100的材质可以采用铜，且基板100为单面印刷电路板(Printed Circuit Board，PCB)，如此使得基板100的背面(即，远离发光组件200的侧面)具有足够的空间来散热，有利于发光装置2000的散热。此外，还可以实现为任一种激光芯片203单独供电、并满足发光装置2000的小型化的设计。本公开对基板100的尺寸不作限定，且可根据需求灵活设置基板100的尺寸，例如，基板100采用宽为15.8mm、长为26mm、厚为1.6mm铜基板。
在一些实施例中，在基板100的材质采用铜的情况下，基板100的厚度可以为2盎司(oz)，约70微米。
在一些实施例中，如图21至图24所示，在垂直于基板100所在平面的方向上，多个第一焊盘11中的任一个第一焊盘11与多个互连区域12中的任一个互连区域12至少部分交叠，连接图案13连接图案13与多个互连区域12至少部分交叠，导电结构24与连接图案13至少部分交叠。
在垂直于基板100所在平面的方向上，第一焊盘11与互连区域12存在交叠区域，交叠区域即为第一焊盘11与互连区域12的连接区域。通过增加第一焊盘11与互连区域12的连接面积，有利于提高第一焊盘11与互连区域12之间电连接的稳定性和通过的电流量。第一焊盘11与互连区域12至少部分交叠可以理解为：在垂直于基板100所在平面的方向上，第一焊盘11位于互连区域12内(如图21或图22所示)，或者第一焊盘11与互连区域12部分交叠，第一焊盘11与互连区域12还存在不交叠(如，错开)的区域。
在垂直于基板100所在平面的方向上，连接图案13或导电部131与互连区域12存在交叠区域，交叠区域即为连接图案13或导电部131与互连区域12的连接区域。通过增加连接图案13或导电部131与互连区域12的连接面积，有利于提高连接图案13或导电部131与互连区域12之间电连接的稳定性和电流量。以导电部131与互连区域12存在交叠区域为例，导电部131与互连区域12至少部分交叠可以理解为：在垂直于基板100所在平面的方向上，导电部131位于互连区域12内(如图21或23所示)，或者导电部131与互连区域12部分交叠，导电部131与互连区域12还存在不交叠的区域。
如此设置，可以实现第一焊盘11通过互连区域12与连接图案13电连接。
在垂直于基板100所在平面的方向上，导电结构24与连接图案13至少部分交叠，即导电结构24与连接图案13存在交叠区域，从而实现导电结构24与连接图案13的电连接。导电结构24与连接图案13至少部分交叠可以理解为：在垂直于基板100所在平面的方向上，导电结构24位于连接图案13内，或者，连接图案13位于导电结构24内，或者导电结构24与连接图案13部分交叠，导电结构24与连接图案13还存在不交叠的区域。
在一些实施例中，如图21和图22所示，在基板100所在平面内，多个第一焊盘11位于基板100的同一侧。这样，在将管壳202设于基板100上后，多个第一焊盘11也位于管壳202的同一侧，不仅可以保证发光装置2000的小型化，还可以增加发光装置2000的外观的美观性，并且可以便于手工焊接。
当然，在其他一些实施例中，多个第一焊盘11还可以位于管壳202的长度方向或宽度方向相对的两侧，这样，也可以实现对任一种激光芯片203的独立供电。
图20中以多个激光芯片203包括第一种激光芯片221和第二种激光芯片222，且第一种激光芯片221发出蓝色激光，第二种激光芯片222发出红色激光或绿色激光为例，当然，在一些实施例中，多个激光芯片203还可以包括三种激光芯片203。
例如，如图26所示，多个激光芯片203包括出光颜色互不相同的两个第一种激光芯片221、三个第二种激光芯片222和四个第三种激光芯片223。位于同一管壳202内的一种激光芯片203之间相互串联，且与对应的一组第一焊盘11连接。与发光组件200电连接的第一焊盘11的数量为激光芯片203的种类数量的2倍。
一种激光芯片203发出一种颜色的激光，第一种激光芯片221、第二种激光芯片222和第三种激光芯片223的出光颜色互不相同。例如，第一种激光芯片221发出蓝色激光，第二种激光芯片222发出绿色激光，第三种激光芯片223发出红色激光；或者第一种激光芯片221发出绿色激光，第二种激光芯片222发出蓝色激光，第三种激光芯片223发出红色激光。
在一些实施例中，如图26所示，第三种激光芯片223的出光波长均大于第一种激光芯片221和第二种激光芯片222的出光波长。例如，第三种激光芯片223出射红色激光，对应的出光波长为622nm～760nm范围内的任一值，第一种激光芯片221出射蓝色激光，对应的出光波长为435nm～450nm范围内的任一值，第二种激光芯片222出射绿色激光，对应的出光波长为492nm～577nm范围内的任一值。在其他一些实施例中，第一种激光芯片221、第二种激光芯片222和第三种激光芯片223还可以发出其他颜色的激光，在此不限定。
在一些实施例中，如图26所示，多个激光芯片203中的至少一种激光芯片203设于一个管壳202内。在同一个管壳202内，所有出光颜色相同的激光芯片203串联，并与对应的一组第一焊盘11连接。
例如，如图26所示，至少一个管壳202包括第一管壳211和第二管壳212。第一管壳211和第二管壳212沿发光组件200的长度方向(如，图26中的左右方向)并排布置。
在此情况下，四个第三种激光芯片223设于第一管壳211内，四个第三种激光芯片223之间通过导线(如，金线或键合线)串联，且该串联电路的两端分别与两侧的台阶部206的第二金属膜电连接，第二金属膜通过第一走线23与导电结构24电连接，导电结构24与导电部131电连接，导电部131通过互连区域12与对应的两个第一焊盘11电连接，从而实现四个第三种激光芯片223与对应的一组第一焊盘11的电连接。
两个第一种激光芯片221和三个第二种激光芯片222设于第二管壳212内。两个第一种激光芯片221之间通过导线串联，且该串联电路的两端与一台阶部206的第二金属膜电连接，该第二金属膜通过第一走线23与导电结构24电连接，导电结构24与连接图案13的导电部131电连接，连接图案13通过互连区域12与对应的两个第一焊盘11电连接，从而实现两个第一种激光芯片221与对应一组第一焊盘11的电连接。
三个第二种激光芯片222之间通过导线串联，且该串联电路的两端与另一台阶部206的第二金属膜电连接，该第二金属膜通过第一走线23与导电结构24电连接，导电结构24与连接图案13的导电部131电连接，连接图案13通过互连区域12与对应的两个第一焊盘11电连接，从而实现三个第一种激光芯片221与对应一组第一焊盘11的电连接。
需要说明的是，图26以多个管壳202包括两个管壳202为例，但本公开并不局限于此。在其他一些实施例中，至少一个管壳202还可以包括一个管壳202，且第一种激光芯片221、第二种激光芯片222和第三种激光芯片223位于同一个管壳202内；或者，至少一个管壳202包括三个管壳202，第一种激光芯片221、第二种激光芯片222和第三种激光芯片223与三个管壳202分别对应，出光颜色相同的激光芯片203位于同一个管壳202内，本公开对管壳202的数量不作限定。
在一些实施例中，如图21所示，多个第一焊盘11包括四组第一焊盘11，该四组第一焊盘11分别为：第一正极性焊盘(R+)和第一负极性焊盘(R-)、第二正极性焊盘(B+)和第二负极性焊盘(B-)，第三正极性焊盘(G+)和第三负极性焊盘(G-)、以及第四正极性焊盘(NTC+)、第四负极性焊盘(NTC-)。
需要说明的是，如图21所示，第一正极性焊盘(R+)对应于第一正极性焊盘1012，第一负极性焊盘(R-)对应于第一负极性焊盘1013；第二正极性焊盘(B+)对应于第二正极性焊盘1015，第二负极性焊盘(B-)对应于第二负极性焊盘1014；第三正极性焊盘(G+)对应于第三正极性焊盘1016，第三负极性焊盘(G-)对应于1017；第四正极性焊盘(NTC+)对应于1011，第四负极性焊盘(NTC-)对应于第四负极性焊盘1018。
在一些实施例中，如图21所示，沿基板100的长度方向，自左向右，八个第一焊盘11的排列顺序为：第四正极性焊盘(NTC+)、第一正极性焊盘(R+)、第一负极性焊盘(R-)、第二负极性焊盘(B-)、第二正极性焊盘(B+)、第三正极性焊盘(G+)、第三负极性焊盘(G-)和第四电阻负极性焊盘(NTC-)。在此情况下，第四正极性焊盘(NTC+)与第一正极性焊盘(R+)相邻，第一负极性焊盘(R-)与第二负极性焊盘(B-)相邻，第二正极性焊盘(B+)与第三正极性焊盘(G+)相邻，第三负极性焊盘(G-)与第四负极性焊盘(NTC-)相邻。这样，按照相同极性相邻的原则设置多个第一焊盘11的位置，可以防止因焊接失误所造成的正极和负极短接的情况。
本公开对第一焊盘11的类型不作限定，例如，如图21所示，第一焊盘11可设置为十字形焊盘。当然，第一焊盘11还可以设置为本领域技术人员可知的所有类型的焊盘。
在一些实施例中，如图21所示，基板100还包括测温部件(如，热敏电阻)4，测温部件4通过第二走线与对应的一组第一焊盘11连接。测温部件4被配置为检测激光芯片203的发热情况。例如。测温部件4包括负温度系数测温部件(Negative Temperature Coefficient，NTC)，或者本领域技术人员可知的其他类型的测温部件，在此不限定。
在一些实施例中，测温部件4满足以下至少之一：测温部件4位于多组第一焊盘11排列方向的中部，以及，多组第一焊盘11在测温部件4的两侧对称设置。如图21和图27所示，测温部件4位于连接图案13的靠近八个第一焊盘11的一侧，该八个第一焊盘11在测温部件4的两侧对称分布，测温部件4对应的一组第一焊盘11(即第四正极性焊盘NTC+和第四负极性焊盘NTC-)位于多个第一焊盘11的最外侧，且测温部件4通过对应的互连区域12与第四正极性焊盘(NTC+)以及第四负极性焊盘(NTC-)电连接。测温部件4的电路连接线路如图27所示，在图27中，TP1表示第四正极性焊盘(NTC+)，TP8表示第四负极性焊盘(NTC-)。
在一些实施例中，如图24所示，导电结构24包括多个第二焊盘241，第二焊盘241与第一走线23连接。多个第二焊盘241对应于至少一个管壳202的侧壁。例如，多个第二焊盘241与至少一个管壳202的侧壁连接。对应的，如图21和图22所示，在垂直基板100所在平面的方向上，导电部131包括多个第三焊盘1311，多个第三焊盘1311中的任一个第三焊盘1311与互连区域12至少部分交叠。
在此情况下，多个第三焊盘1311与多个第二焊盘241分别对应电连接，多个第三焊盘1311还通过互连区域12与多个第一焊盘11电连接，第二焊盘241通过第一走线23与对应的激光芯片203焊接连接，且同一管壳202内出光颜色相同的多个激光芯片203之间串联。这样，任一种颜色的激光芯片203可以被单独供电，可以避免激光芯片203的数量的增加导致驱动电路数量的增加，如此有利于降低成本。
在一些实施例中，在至少一个管壳202包括第一管壳211和第二管壳212，且多个激光芯片203包括第一种激光芯片221和第二种激光芯片222、第三种激光芯片223，且第三种激光芯片223设于第一管壳211内、第一种激光芯片221和第二种激光芯片222设于第二管壳212内的情况下，导电结构24可以包括八个第二焊盘241，且任一个管壳202的靠近第一焊盘11的一侧设有四个第二焊盘，该四个第二焊盘241并排设置。
第二管壳212上的两个第二焊盘241连接第一组第一焊盘11，第二管壳212上的另两个第二焊盘241连接第二组第一焊盘11。第一管壳211上的远离第二管壳212的两个第二焊盘241连接第三组第一焊盘11，第一管壳211上的另两个相邻第二焊盘241中的靠近第二管壳212的一个，与第二管壳212上靠近第一管壳211的第二焊盘241电连接。
在此情况下，第一管壳211和第二管壳212的朝向基板100的一侧分别设有金属膜25和多个第二焊盘241，金属膜25与固定部132对应并连接，多个第二焊盘241与多个第三焊盘1311分别对应且电连接。这样，可以实现发光组件200与基板100的固定以及电连接。
如图21、图22和图26所示，第一管壳211以及第二管壳212与基板100固定以及电连接的方式为：位于右侧的连接图案13的固定部132与第二管壳212的朝向基板100一侧的金属膜25固定连接，与第二管壳212的四个第二焊盘241对应的四个第三焊盘1311靠近第一焊盘11设置，四个第三焊盘1311中的两个第三焊盘1311通过互连区域12连接一组第一焊盘11，另两个第三焊盘1311通过互连区域12连接另一组第一焊盘11。
位于左侧的连接图案13的固定部132与第一管壳211朝向基板100一侧的金属膜25固定连接，与第一管壳211的四个第二焊盘241对应的四个第三焊盘1311靠近第一焊盘11设置，四个第三焊盘1311中的远离右侧的连接图案13的两个第三焊盘1311连接通过互连区域12连接一组第三焊盘1311，另两个第三焊盘1311(如图22中编号为3和4的两个第三焊盘1311)中至少靠近右侧的一个第三焊盘1311，与位于右侧的连接图案13的导电部131中最靠近左侧第一管壳211的第三焊盘1311(如，图22中编号为5的第三焊盘1311)通过同一互连区域12连接。
例如，如图28所示，编号为3和编号为4的第三焊盘1311通过互连区域12与编号为5的第三焊盘1311电连接；又如，如图29所示，编号为4的第三焊盘1311通过互连区域12与编号为5的第三焊盘1311电连接。需要说明的是，位于右侧的连接图案13与第二管壳212对应，位于左侧的连接图案13与第一管壳211对应。
由于需要在基板100上设置定位孔，若管壳202与定位孔之间的距离被压缩到小于或等于0.5mm，则管壳202与定位孔之间的区域不便走线，因此，本公开一些实施例可以在管壳202的靠近第一焊盘11的一侧设置第二焊盘241，第二焊盘241通过靠近第一焊盘11的第三焊盘1311以及互连区域12与对应的第一焊盘11电连接。
在其他一些实施例中，在定位孔与管壳202之间的间距以及两个管壳202之间的间距满足最小走线宽度的条件下，第二焊盘241还可以设置在管壳202的远离第一焊盘11的一侧。此时，还可以在以下位置中的至少之一设置互连区域12，基板100上的定位孔与管壳202之间的区域，或在基板100上的两个管壳202之间的区域。这样，在互相靠近的第三焊盘1311通过互连区域12连接后，该第三焊盘1311可以与第一焊盘11电连接，从而能够增大走线宽度，进而增大通过的电流量。
下面以基板100包括八个第一焊盘11、至少一个管壳包括两个管壳，且多个激光芯片包括三种不同颜色的激光芯片为例介绍发光组件200与基板100的多种电连接关系。
如图26所示，八个第一焊盘11位于两个管壳202的同一侧，任一个管壳202的靠近第一焊盘11的一侧设有四个第二焊盘241。与第一管壳211和第二管壳212对应的基板如图21或23所示。对应地，导电部131包括八个第三焊盘。为了清楚说明激光芯片203、第二焊盘241、第三焊盘1311与第一焊盘11之间的对应关系，如图21和图26所示，对靠近第一焊盘11的八个第三焊盘1311进行编号，第一管壳211上的四个第二焊盘241对应的四个第三焊盘1311编号为1～4，第二管壳212上的四个第二焊盘241对应的四个第三焊盘1311的编号为5～8。
并且，第一种激光芯片221发出蓝色激光，第二种激光芯片222发出绿色激光，第三种激光芯片223发出红色激光。多个第三种激光芯片223封装于第一管壳211内，第三种激光芯片223通过第一管壳211的第一走线23与对应的两个第二焊盘241电连接，该两个第二焊盘241与对应的两个第三焊盘1311(编号为1和2)连接，编号为1的第三焊盘1311通过互连区域12与第一正极性焊盘(R+)连接，编号为2的第三焊盘1311通过互连区域12与第一负极性焊盘(R-)连接，
多个第一种激光芯片221和多个第二种激光芯片222封装在第二管壳212内。第一种激光芯片221通过第二管壳212的第一走线23与对应的两个第二焊盘241电连接，该两个第二焊盘241与对应的两个第三焊盘1311(编号为5和6)连接，编号为5的第三焊盘1311通过互连区域12与第二负极性焊盘(B-)连接，编号为6的第三焊盘1311通过互连区域12与第二正极性焊盘(B+)连接。第二种激光芯片222通过第二管壳212内的第一走线23与对应的两个第二焊盘241电连接，该两个第二焊盘241与对应的两个第三焊盘1311(编号为7和8)连接，编号为7的第三焊盘1311通过互连区域12与第三正极性焊盘(G+)连接，编号为8的第三焊盘1311通过互连区域12与第三负极性焊盘(G-)连接。
在上述结构的基础上，编号为3的第三焊盘1311和编号为4的第三焊盘1311以及编号为5的第三焊盘1311可以具有多种连接方式。
在一些实施例中，如图21和图28所示，由于布线空间的限制和增加的测温部件4，若在第三焊盘1311(编号为5)与第二负极性焊盘(B-)之间布线，其他布线的面积会减小，或者，走线与测温部件4重叠而导致短路。因此，编号为3的第三焊盘1311和编号为4的第三焊盘1311以及编号为5的第三焊盘1311可以通过同一互连区域12与第二负极性焊盘(B-)电连接。例如，第二负极性焊盘(B-)通过对应的互连区域12与编号为3、4和5的三个第三焊盘1311连接。如此设置，一方面可以增加走线宽度，从而增大通过的电流量，提高激光芯片203的发光强度，另一方面也可以避免影响测温部件4与第一焊盘11的位置，简化发光装置2000结构。
在一些实施例中，如图29所示，编号为4的第三焊盘1311与编号为5的第三焊盘1311通过同一互连区域12与第二负极性焊盘(B-)电连接。编号为5的第三焊盘1311与第二管壳212底部的第二焊盘241对应连接，该第二焊盘241与蓝色激光芯片的负极连接，如此实现了蓝色激光芯片与第二负极性焊盘(B-)的电连接。在此情况下，编号为3的第三焊盘1311与编号为2的第三焊盘1311通过同一互连区域12与第一负极性焊盘(R-)电连接。编号为2的第三焊盘1311与第一管壳211底部的第二焊盘241对应连接，该第二焊盘241与红色激光芯片的负极连接，如此实现红色激光芯片与第一负极性焊盘(R-)的电连接。如此设置，第一负极性焊盘(R-)与第二负极性焊盘(B-)的走线宽度都可以扩大一倍，从而增大通过的电流量，提高激光芯片203的发光强度，也可以避免影响测温部件4与第一焊盘11的位置，简化发光装置2000的结构。
在一些实施例中，以图28或图29示出的方位为例，以测温部件4所在的位置为分界线，还可仅将第一正极性焊盘(R+)和第一负极性焊盘(R-)分别设置在测温部件4的左侧，将第二负极性焊盘(B-)、第二正极性焊盘(B+)、第三正极性焊盘(G+)以及第三负极性焊盘(G-)分别设置在测温部件4的右侧。对应地，多个第三焊盘1311与多个第二焊盘241的位置对应，以确保均匀的走线宽度。
例如，如图30所示，第四正极性焊盘(NTC+)和第四负极性焊盘(NTC-)可分别设置在基板100的左侧，如此设置，任一个管壳202的第二焊盘241可直接与该第二焊盘241邻近的第一焊盘11电连接，但是需要重新调整第一焊盘11和测温部件4之间的走线。例如，需增加基板100的下侧(如，多个第一焊盘11远离管壳202的一侧对应的基板100的部分)的空间以容纳这部分走线；或者，第四正极性焊盘(NTC+)和第四负极性焊盘(NTC-)仍分别设置在左右两侧，两侧的第一焊盘11的数量不同。
在一些实施例中，若不考虑测温部件4的空间需求，任一种激光芯片203对应的第三焊盘1311可对应于管壳202的第二焊盘241的位置，且均匀分布，本公开在此不作限定。
例如，如图31所示，图31为图21或图28所示的发光装置2000对应的电路图，U1表示第一管壳211，U2表示第二管壳212，第一管壳211和第二管壳212的结构相同，U2为U1顺时针旋转180°后得到；U1的引脚1与TP2连接，上上引脚2与TP3连接，U1的引脚3、引脚4和U2的引脚5分别与TP4连接，U2的引脚6与TP5连接，引脚7与TP6连接，引脚8与TP7连接。U1的引脚1-4分别对应编号为1-4的四个第三焊盘1311，U2的引脚5-8分别对应编号为5-8的四个第三焊盘1311，TP2对应第一正极性焊盘(R+)，TP3对应第一负极性焊盘(R-)TP4对应第二负极性焊盘(B-)，TP5对应第二正极性焊盘(B+)，TP6对应第三正极性焊盘(G+)，TP7对应第三负极性焊盘(G-)。
在一些实施例中，如图32所示，至少一个管壳202包括第一管壳211和第二管壳212，第一管壳211和第二管壳212沿第一方向Y排布。发光组件200还包括透镜8，透镜8位于管壳202的远离基板100的一侧。第一管壳211和第二管壳212内分别设有激光芯片203和反射棱镜5，激光芯片203沿第一方向Y或第一方向Y的反方向发出激光，激光投射在反射棱镜的反射面并被反射，被反射的激光透过光窗(密封玻璃)或透镜8中的至少一个出射。这里，第一方向Y为图26中的由右指向左的方向。
在一些实施例中，发光组件200还包括至少一个透光玻璃密封件，所述至少一个透光玻璃密封件位于至少一个管壳202的远离基板100的一侧，至少一个管壳202与所述至少一个透光玻璃密封件形成容置空间，所述容置空间容纳所述多种激光芯片中的至少一种激光芯片。
在其他一些实施例中，发光装置1000还包括本领域技术人员可知的其他元器件，例如反射棱镜5和热沉6等，在此不限定。
如图33至图35所示，第一管壳211内设有多个第三种激光芯片223，多个第三种激光芯片223之间串联，多个第三种激光芯片223的负极和正极分别通过第一管壳211内的走线(如第一走线23)与第一管壳211底部设置的第二焊盘241连接，第二焊盘241与基板100的第三焊盘1311电连接，第三焊盘1311通过互连区域12与第一焊盘11电连接，从而实现第三种激光芯片与基板100的电连接，第一管壳211内的走线可以位于管壳侧壁和管壳底壁中。
如图36至图38所示，第一管壳211内设有多个第一种激光芯片221和多个第二种激光芯片222，所有第一种激光芯片221之间串联，所有第二种激光芯片222之间串联，且多个第一种激光芯片221和多个第二种激光芯片222之间相隔开，第一种激光芯片221的正极和负极分别通过第二管壳212内的走线与第二管壳212底部的第二焊盘241电连接，第二焊盘241与基板100的第三焊盘1311电连接，第三焊盘1311通过互连区域12与对应的第一焊盘11电连接，第二种激光芯片222的正极和负极分别通过第二管壳212内的走线与第二管壳212底部的第二焊盘241电连接，第二焊盘241与基板100的第三焊盘1311电连接，第三焊盘1311通过互连区域12与对应的第一焊盘11连接，从而实现第一种激光芯片221与基板100的电连接，以及第二种激光芯片222与基板100的电连接，第二管壳212内的走线位于管壳侧壁和管壳底壁中。
在一些实施例中，如图39至图41所示，任一个管壳202内设置一种激光芯片203，多个管壳202的排列方向与多个第一焊盘11的排列方向相同。在管壳202的朝向基板100的一侧，任一个管壳202至少在靠近第一焊盘11的一侧包括并排设置的两个第二焊盘241，且该两个第二焊盘241分别连接至一组第一焊盘11。
在一些示例中，发光装置2000包括三个管壳202，任一种激光芯片203被单独封装在一个管壳202内，即一个管壳202内的多个激光芯片203的出光颜色相同，且互相串联。例如，所有第一种激光芯片221设置在同一个管壳202内，且所有第一种激光芯片221之间串联；所有第二种激光芯片222设置在同一个管壳202内，且所有第二种激光芯片之间串联；所有第三种激光芯片223设置在同一个管壳202内，且所有第三种激光芯片223之间串联。多个第一焊盘11位于三个管壳202的同一侧，且多个第一焊盘11和多个管壳202沿同一方向排列。任一个管壳202的靠近第一焊盘11的一侧设置有两个第二焊盘241，且该两个第二焊盘241的排列方向与多个第一焊盘11的排列方向相同。任一个管壳202的两个第二焊盘241与对应的一组第一焊盘11电连接。
在此情况下，如图40至图42所示，至少一个连接图案13包括三个连接图案13，基板100包括与三个管壳202对应的三个连接图案13，任一个连接图案13包括两个第三焊盘1311，该两个第三焊盘1311靠近多组第一焊盘11的一侧，且并排设置，任一个第三焊盘1311通过互连区域12与对应的第一焊盘11电连接。多个第三焊盘1311与管壳202的多个第二焊盘241分别对应连接，第二焊盘241通过第一走线23与位于管壳202内的激光芯片203电连接，从而实现激光芯片203与对应第一焊盘11的电连接。
例如，如图40和图41所示，左侧的管壳202用于封装红色激光芯片，对应的两个第二焊盘241通过第三焊盘1311和互连区域12分别与第一正极性焊盘(R+)和第一负极性焊盘(R-)连接。中间的管壳202用于封装蓝色激光芯片，对应的两个第二焊盘241通过第三焊盘1311和互连区域12分别与第二负极性焊盘(B-)和第二正极性焊盘(B+)连接。右侧的管壳202用于封装绿色激光芯片，对应的两个第二焊盘241通过第三焊盘1311和互连区域12分别与第三正极性焊盘(G+)和第三负极性焊盘(G-)连接。
在其他一些实施例中，如图42所示，多个第二焊盘241还可以分别设置在管壳202的靠近第一焊盘11的一侧和远离第一焊盘11的一侧。对应的，如图41所示，在基板本体的靠近第一焊盘11的一侧和远离第一焊盘的一侧分别设置多个第三焊盘1311。在定位孔与管壳202之间的间距以及多个管壳202之间的间距满足最小走线宽度的条件下，可通过在定位孔与管壳202之间或多个管壳202中之间中的至少之一设置互连区域12，以将远离第一焊盘11的多个第三焊盘1311与靠近第一焊盘11的多个第三焊盘1311电连接，以增大走线宽度，从而增大通过的电流量。
在一些实施例中，如图43至图45所示，至少一个管壳202包括一个管壳202，管壳202内设置三种激光芯片203(即第一种激光芯片221、第二种激光芯片222和第三种激光芯片223)。管壳202的靠近第一焊盘11的第一侧设有并排设置的四个第二焊盘241，以及与第一侧相邻的第二侧和第三侧分别设有一个第二焊盘241，第二侧与第三侧相对设置。管壳202的六个第二焊盘241与三组第一焊盘11分别对应连接。
例如，如图45所示，第一种激光芯片221、第二种激光芯片222和第三种激光芯片223位于同一个管壳202内，三种激光芯片203自左向右排开，且分别通过引线连接至管壳202内部，并与管壳202内的走线电连接。例如，第三种激光芯片223为红色激光芯片，第一种激光芯片221为蓝色激光芯片，第二种激光芯片222为绿色激光芯片。如图45所示，发光组件200还包括多个防静电装置7。蓝色激光芯片和绿色激光芯片需要设置防静电装置7，而红色激光芯片材料的防静电能力强，因此红色激光芯片可以省去防静电装置7。
需要说明的是，如图45所示，发光组件200还包括多个反射棱镜5和多个热沉6，多个激光芯片203和多个防静电装置7设置于热沉6的远离基板100的一侧，多个反射棱镜5位于多个激光芯片203的出光侧，且多个反射棱镜5的反射面与多个激光芯片203对准匹配。多个激光芯片203可与多个热沉6分别对应设置，也可将发光颜色相同的多个激光芯片203设置在同一个热沉6上，在此不限定。
如图46和图47所示，管壳202的靠近第一焊盘11的一侧为第一侧，第二侧和第三侧分别位于第一侧的左右两侧，且与第一侧相邻。管壳202的第一侧并排设置有四个第二焊盘241，第二侧设置有一个第二焊盘241，第三侧设置有一个第二焊盘241。
对应的，如图44所示，连接图案13的靠近第一焊盘11的一侧(与管壳202的第一侧对应)设有四个第三焊盘1311，该四个第三焊盘1311对应的左侧和右侧(与管壳202的第二侧和第三侧对应)分别设有一个第三焊盘1311。该六个第三焊盘1311与六个第二焊盘241分别对应连接，且该六个第三焊盘1311分别通过互连区域12与对应的第一焊盘11电连接，从而实现六个第二焊盘241与六个第一焊盘11对应连接。
六个第二焊盘241与六个第一焊盘11的连接关系如下：
如图44和图47所示，第二侧(以左侧为例)的第二焊盘241与编号为1的第三焊盘1311电连接，编号为1的第三焊盘1311通过互连区域12与第一正极性焊盘(R+)电连接。在此情况下，编号为9或10的第三焊盘1311中的至少一个以及编号为1的第三焊盘1311可以通过同一互连区域12与第一正极性焊盘(R+)电连接。
第一侧左端的第一个第二焊盘241与编号为2的第三焊盘1311电连接，编号为2的第三焊盘1311通过互连区域12与第一负极性焊盘(R-)电连接。第一侧左端第二个第二焊盘241与编号为3的第三焊盘1311电连接，编号为3的第三焊盘1311通过互连区域12与第二负极性焊盘(B-)电连接。第一侧右端第二个第二焊盘241与编号为4的第三焊盘1311电连接，编号为4的第三焊盘1311通过互连区域12与第二正极性焊盘(B+)电连接。第一侧右端的第一个第二焊盘241与编号为5的第三焊盘1311电连接，编号为5的第三焊盘1311通过互连区域12与第三正极性焊盘(G+)电连接。
第三侧(以右侧为例)的第二焊盘241与编号为6的第三焊盘1311电连接，编号为6的第三焊盘1311通过互连区域12与第三负极性焊盘(G-)电连接。在此情况下，编号为7或8的第三焊盘1311中的至少一个以及编号为6的第三焊盘1311可以通过同一互连区域12与第三负极性焊盘(G-)电连接。
当然，在另一些实施例中，第一正极性焊盘(R+)还可通过互连区域12与编号为1、10或9的第三焊盘1311中的至少一个连接；同理，第三负极性焊盘(G-)可通过互连区域12与编号为6、7和7中的至少一个第三焊盘1311连接。上述结构可根据基板100、管壳202以及定位孔的相对位置和大小进行设置，本公开在此不作限定。
在一些实施例中，如图46和图47所示，管壳202的与第一侧相对设置的第四侧设有并排设置的四个第二焊盘241。该四个第二焊盘241中的两个第二焊盘241通过对应的两个第三焊盘1311，该两个第三焊盘1311通过同一互连区域12连接到一个第三焊盘1311，该第三焊盘1311与第二侧的第二焊盘241连接，另两个第二焊盘241通过对应的两个第三焊盘1311，该两个第三焊盘1311通过同一互连区域12连接到一个第三焊盘1311，该第三焊盘1311与第三侧的第二焊盘241连接。
管壳202的第四侧即为管壳202的远离第一焊盘11的一侧，该侧设置有四个第二焊盘241。对应的，如图44所示，在连接图案13的远离第一焊盘11的一侧也设置了四个第三焊盘1311(编号7、8、9和10)，四个第三焊盘1311与第四侧的四个第二焊盘241分别对应电连接。
编号为9和10的两个第三焊盘1311就近与位于连接图案13左侧的一个第三焊盘1311(编号为1)电连接，使得编号为1、9和10的三个第三焊盘1311通过同一个互连区域12与第一正极性焊盘(R+)电连接，实现管壳202的第四侧的两个第二焊盘241通过同一互连区域12连接第二侧的第二焊盘241。编号为7和8的两个第三焊盘1311就近与位于连接图案13右侧的一个第三焊盘1311(编号为6)连接，使得编号为6、7和8的三个第三焊盘1311通过同一个互连区域12与第三负极性焊盘(G-)电连接。
如此设置，第一正极性焊盘(R+)和第三负极性焊盘(G-)分别与三个第三焊盘1311连接，可以实现管壳202的第四侧的两个第二焊盘241通过同一互连区域12连接第三侧的第二焊盘241。这样，可以增加互连区域12的宽度，有利于提高电流量。
需要说明的是，图44和图46仅以基板100远离第一焊盘11一侧的多个第三焊盘1311以两个为一组为例，即编号9和10为一组，7和8为一组，且编号9以及10的第三焊盘1311与编号为1的第三焊盘1311电连接，编号7以及8的第三焊盘1311与编号为6的第三焊盘1311电连接，但并不构成对本公开一些实施例提供的发光装置2000的限定。
在其他一些实施例中，还可以将管壳202的第四侧的四个第三焊盘1311(编号为7、8、9和10)中的至少一个与编号为1的第三焊盘1311电连接，剩余第三焊盘1311中的至少一个与编号为6的第三焊盘1311电连接。例如，编号为8、9、10的第三焊盘1311与编号为1的第三焊盘1311电连接，编号为7的第三焊盘1311与编号为6的第三焊盘1311电连接，或者，编号为10的第三焊盘1311与编号为1的第三焊盘1311电连接，编号为7、8和9的第三焊盘1311与编号为6的第三焊盘1311电连接，或者，将编号为7、8、9、10的第三焊盘1311与编号为1的第三焊盘1311电连接，或者，将7、8、9、10第三焊盘1311与编号为6的第三焊盘1311电连接，在此不限定。
在一些实施例中，在基板100所在平面内，第一焊盘11的单边宽度为1.3mm～1.7mm范围中的任一值。例如，第一焊盘11的单边宽度为1.3mm、1.4mm、1.5mm、1.6mm或1.7mm。沿多个第一焊盘11的排列方向，相邻两个第一焊盘11之间的间距为0.8mm～1.2mm范围中的任一值，例如，相邻第一焊盘11之间的间距为0.8mm、0.9mm、1.0mm、1.1mm或1.2mm。
在一些实施例中，在基板100所在平面内，第三焊盘1311的长边宽度为1.1mm～1.5mm中的任一值，例如，第三焊盘1311的长边宽度为1.1mm、1.2mm、1.3mm、1.4mm或1.5mm。短边宽度为0.4mm～0.8mm中的任一值，例如，短边宽度为0.4mm、0.5mm、0.6mm、0.7mm或0.8mm。沿多个第三焊盘1311的排列方向，相邻第三焊盘1311之间的间距为0.1mm～0.5mm中的任一值，例如，相邻第三焊盘1311之间的间距为0.1mm、0.2mm、0.3mm、0.4mm或0.5mm。
本公开对管壳202的尺寸(包括长和宽)不做限定，可根据发光装置2000的要求设置管壳202的尺寸。例如，管壳202的尺寸为长10.6mm、宽6.4mm。
本公开还提供了一种发光装置的制备方法，该方法可以应用于制备上述实施例中任一项的发光装置2000。图48A为根据一些实施例的一种发光装置的制备方法的流程图。如图48A所示，该方法包括步骤901至步骤905。
在步骤901中，提供激光芯片203、容置结构2021、盖板2022和多个第一密封部2023。
在步骤902中，将激光芯片203设置在容置结构2021内。
在步骤903中，将多个第一密封部2023设置在盖板2022的朝向容置结构2021的一侧；多个第一密封部2023中的相邻两个第一密封部2023间隔设置。
在步骤904中，通过多个第一密封部2023连接容置结构2021与盖板2022，使得任意相邻的两个第一密封部2023之间相互接触以连接容置结构2021和盖板2022，以封闭容置结构2021和盖板2022之间连接处的缝隙，形成发光组件200。
在步骤905中，将发光组件200电连接至基板100。
在一些实施例中，该方法还包括：在盖板2022的朝向容置结构2021的一侧设置第二密封部2024。
图48B为根据一些实施例的一种激光投影设备的制备方法的另一种流程图。在一些实施例中，如图48B所示，该方法还包括步骤913。
在步骤913中，将多个第一密封部2023连接至第二密封部2024。
图49为根据一些实施例的一种激光投影设备的制备方法的又一种流程图。在一些实施例中，如图49所示，步骤904包括步骤1001和步骤1002。
在步骤1001中，加热多个第一密封部2023，使得多个第一密封部2023处于熔融状态。
在步骤1002中，将多个第一密封部2023同时连接至容置结构2021，并对多个第一密封部2023施加压力，使得相邻的第一密封部2023之间相互接触，以封闭容置结构2021和盖板2022之间连接处的缝隙。
图50为根据一些实施例的一种激光投影设备的制备方法的又一种流程图。在一些实施例中，如图50所示，步骤913包括步骤1101和步骤1102。
在步骤1101中，确定第一密封部2023的数量、多个第一密封部2023中任意相邻两个第一密封部2023之间的间距以及第一密封部2023的半径。
在步骤1102中，根据第一密封部2023的数量、多个第一密封部2023中任意相邻两个第一密封部2023之间的间距以及第一密封部2023的半径，将多个第一密封部2023连接至第二密封部2024。
下文结合附图对本公开一些实施例提供的发光装置2000的制备过程以及工作原理进行举例说明。需要说明的是，本公开一些实施例中的制备方法仅为举例说明，部分方法的步骤之间可能会相互调换。在本公开一些实施例的制备方法中，可能未对发光装置2000的所有可能存在的部件的制备过程做出详尽的描述，而未进行示例的，则应当被认定为为了描述简洁为未做赘述。
首先，分别提供激光芯片203、容置结构2021、盖板2022、多个第一密封部2023以及第二密封部2024。
图51为根据一些实施例的盖板和第二密封部的结构图。如图51所示，之后，在盖板2022的朝向容置结构2021的一侧对应的第二密封区域处设置第二密封部2024。第二密封部2024可以用于连接第一密封部2023。例如，在第二密封区域处制备金属化层等。盖板2022用于与容置结构2021形成管壳202，以实现对于管壳202内部的激光芯片的密封。盖板2022的材质可以为高强度的蓝宝石(Sapphire)，或者也可以为石英(Quartz)、玻璃(Glass)等。盖板2022的四周设有第二密封部2024，盖板2022的其余区域为透光区，第二密封部2024通过与第一密封部2023结合实现高气密性。
图52为根据一些实施例的盖板、多个第一密封部以及第二密封部的结构图。之后，如图52所示，根据管壳202的尺寸确定第一密封部2023的数量、多个第一密封部2023之间的间距以及第一密封部2023的半径，并且根据第一密封部2023的数量、多个第一密封部2023之间的间距以及第一密封部2023的半径，将多个第一密封部2023连接至第二密封部2024。
如图13所示，之后，在容置结构2021中设置激光芯片203、转向部件204以及热沉等元件或结构。激光芯片203被配置为发出光束，转向部件204被配置为改变光束的方向。例如，转向部件204为反射镜。热沉被配置为传导激光芯片203产生的热量。
图53为根据一些实施例的一种发光组件的结构图。如图53所示，将制备完成的盖板2022与容置结构2021相互对准，并加热第一密封部2023。之后，对盖板2022施加压力，多个第一密封部2023在压力的作用下改变自身形状，填充密封区域300，完成对于盖板2022与容置结构2021的密封。
图54为根据一些实施例的发光装置的又一种结构图。如图54所示，将发光组件200电连接至基板100，以完成发光装置2000的制备。基板100不仅可以用来固定发光组件200，也可以在基板100内部设置印刷电路板(Printed Circuit Board)，以实现基板100与管壳202的电路互连功能，进而将基板100与激光芯片203电连接。管壳202与基板100可以利用锡银铜合金通过回流焊接(Reflowsoldering)的方式固定，或者，管壳202与基板100也可以通过高温加压烧结银浆或铜浆的方式固定。基板100的材质可以是无氧铜、紫铜等金属材料。
在一些实施例中，可以在盖板2022对应的基材上大规模预制第一密封部2023。图55为根据一些实施例的盖板的局部结构图。如图55所示，通过设置透射膜层的方式增加盖板2022的透过率，对盖板2022进行金属化溅射形成第二密封部2024。然后在第二密封部2024上进行第一密封部2023的预制。在完成所有工序(即，完成盖板2022和容置结构2021连接后)之后，再对盖板2022进行形状切割。金属化溅射是一种常见的表面涂层技术，可以在材料表面形成金属薄膜。且通过物理溅射过程实现。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何一个或多个实施例或示例中以合适的方式结合。
需要说明的是，本公开中任一个公开的技术方案，可在一定程度上解决上述一个或多个技术问题并实现对应的技术效果。或者，多个公开的技术方案也可以组合成一个整体方案，以解决上述一个或多个技术问题并实现对应的技术效果。或者，部分公开的技术方案组合成一个整体方案，并结合相关技术和变劣方案，但该方案可以通过本公开的技术手段弥补变劣趋势，从而整体上在一定程度上解决上述一个或多个技术问题并实现对应的技术效果。或者，每一个公开的技术方案组合成一个完整技术方案，构成一个有机不可分割的整体方案，从而整体上解决技术问题并实现对应的技术效果。
本公开中任一公开的技术方案，以及多个公开的技术方案的重新组合分别可以形成完整的技术方案，且能够解决上述多个技术问题中的一个或多个，并实现对应的技术效果，都属于本公开的内容，且属于根据本公开的内容直接地、毫无疑义地确定的内容。
本领域技术人员将会理解，本公开的公开范围不限于上述具体实施例，并且可以在不脱离本公开的精神的情况下对实施例的某些要素进行修改和替换。本公开的范围受附权利要求的限制。在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何一个或多个实施例或示例中以合适的方式结合。

Claims (20)

  1. 一种发光装置，包括：
    基板，包括：
    基板本体；
    至少一个连接图案，设于所述基板本体，且包括导电部；
    多个互连区域，设于所述基板本体；以及
    多组第一焊盘，设于所述基板本体，所述多组第一焊盘通过所述多个互连区域与所述导电部电连接，所述多组第一焊盘中的任一组第一焊盘包括两个极性不同的第一焊盘；以及
    发光组件，固定在所述至少一个连接图案上，且包括：
    至少一个管壳，所述至少一个管壳的侧壁或底壁中的至少之一设有第一走线；
    导电结构，设于所述至少一个管壳的朝向所述基板的一侧，且与所述第一走线以及所述导电部电连接；以及
    多种激光芯片，设于所述至少一个管壳内，且与所述第一走线电连接，所述多种激光芯片发出至少两种不同颜色激光，所述多种激光芯片中同一种激光芯片与所述任一组第一焊盘电连接。
  2. 根据权利要求1所述的发光装置，其中，所述至少一个连接图案设于所述基板本体的朝向所述发光组件的一面；所述基板本体内设有多个第二走线，且所述多个第二走线形成所述多个互连区域；在垂直于所述基板所在平面的方向上，所述多组第一焊盘中的任一个第一焊盘与所述多个互连区域中的任一个互连区域至少部分交叠，所述导电部与所述多个互连区域至少部分交叠，所述导电结构与所述导电部至少部分交叠。
  3. 根据权利要求1或2所述的发光装置，其中，所述多种激光芯片中任一种激光芯片包括多个激光芯片，所述同一种激光芯片中多个激光芯片互相串联，形成串联电路，所述串联电路的两端分别与对应的两个第一焊盘电连接；所述多组第一焊盘中的、与所述发光组件电连接的多个第一焊盘的数量为所述多种激光芯片的种类数量的两倍。
  4. 根据权利要求1至3中任一项所述的发光装置，其中，所述导电结构包括多个第二焊盘，且所述多个第二焊盘对应于所述至少一个管壳的侧壁；所述导电部包括多个第三焊盘，所述多个第三焊盘与所述多个第二焊盘分别对应且焊接连接，所述多个第二焊盘与所述第一走线电连接。
  5. 根据权利要求1至4中任一项所述的发光装置，其中，所述多种激光芯片中任一种激光芯片包括一个或多个激光芯片，所述一个或多个激光芯片发出相同颜色激光；所述多种激光芯片包括第一种激光芯片、第二种激光芯片和第三种激光芯片，所述第一种激光芯片、所述第二种激光芯片和所述第三种激光芯片分别发出不同颜色激光。
  6. 根据权利要求5所述的发光装置，其中，所述第三种激光芯片发出的激光的波长均大于所述第一种激光芯片和所述第二种激光芯片发出的激光的波长。
  7. 根据权利要求5或6所述的发光装置，满足以下之一：
    所述至少一个管壳包括并排设置的第一管壳和第二管壳，所述第三种激光芯片设于所述第一管壳内，所述第一种激光芯片和所述第二种激光芯片均设于所述第二管壳内；
    所述至少一个管壳包括三个管壳，所述三个管壳沿所述基板的长度方向排布，所述第一种激光芯片、所述第二种激光芯片和所述第三种激光芯片分别设于所述三个管壳内；以及
    所述至少一个管壳包括一个管壳，所述第一种激光芯片、所述第二种激光芯片和所述第三种激光芯片均设于所述管壳内。
  8. 根据权利要求1至7中任一项所述的发光装置，其中，所述至少一个管壳包括多个管壳，所述多个管壳中的任一个管壳内至少设置所述多种激光芯片中的至少一种激光芯片。
  9. 根据权利要求8所述的发光装置，其中，所述多个管壳的排列方向与所述多组第一焊盘的排列方向相同。
  10. 根据权利要求1至9中任一项所述的发光装置，其中，所述至少一个管壳的侧壁的材质为陶瓷，所述至少一个管壳的底壁的材质为金属。
  11. 根据权利要求1至10中任一项所述的发光装置，还包括测温部件，所述测温部件通过第二走线与所述多组第一焊盘中的对应的一组第一焊盘连接。
  12. 根据权利要求11所述的发光装置，其中，所述测温部件满足以下之一：
    所述测温部件位于所述多组第一焊盘排列方向的中部，以及，所述多组第一焊盘在所述测温部件的两侧对称设置。
  13. 根据权利要求1至12中任一项所述的发光装置，其中，所述多组第一焊盘满足以下之一：
    在所述基板所在平面内，所述多组第一焊盘均位于所述基板本体的同一侧，且靠近所述基板本体的边缘；
    所述多组第一焊盘中的相同极性的第一焊盘相邻设置；以及
    所述任一组第一焊盘中的不同极性的焊盘相邻设置。
  14. 根据权利要求1至13中任一项所述的发光装置，其中，在所述基板所在平面内，所述多组第一焊盘中的任一个第一焊盘的单边宽度为1.3mm～1.7mm范围内的任一值；沿所述多组第一焊盘的排列方向，相邻两个第一焊盘之间的间距为0.8mm～1.2mm范围内的任一值。
  15. 根据权利要求1至14中任一项所述的发光装置，其中，所述多组第一焊盘中的任一个第一焊盘为金属层，且呈矩形。
  16. 根据权利要求1至15中任一项所述的发光装置，其中，
    所述至少一个连接图案中的任一个连接图案还包括固定部，所述固定部设于所述基板本体，所述固定部对应于所述至少一个管壳的底壁，所述发光组件设于所述固定部；
    所述发光组件还包括至少一个金属膜，所述至少一个金属膜设于所述至少一个管壳的朝向所述基板本体的一侧，所述至少一个金属膜中的任一个金属膜与所述固定部对应且连接。
  17. 根据权利要求1至16中任一项所述的发光装置，还包括电耦合组件，所述电耦合组件设置在所述基板本体的靠近所述多组第一焊盘的区域，所述电耦合组件和所述多组第一焊盘均电连接，且所述电耦合组件被配置为连接外部电信号。
  18. 根据权利要求1至17中任一项所述的发光装置，其中，所述发光组件还包括至少一个透光玻璃密封件，所述至少一个透光玻璃密封件位于所述至少一个管壳的远离所述基板的一侧，所述至少一个管壳与所述至少一个透光玻璃密封件形成容置空间，所述容置空间容纳所述多种激光芯片中的至少一种激光芯片。
  19. 一种发光装置的制备方法，所述发光装置包括基板、发光组件，所述发光组件包括激光芯片、容置结构、盖板以及多个第一密封部，其中，所述方法包括：
    提供所述激光芯片、所述容置结构、所述盖板和所述多个第一密封部；
    将所述激光芯片设置在所述容置结构内；
    将所述多个第一密封部设置在所述盖板的朝向所述容置结构的一侧；所述多个第一密封部中的相邻两个第一密封部间隔设置；
    通过所述多个第一密封部连接所述容置结构与所述盖板，使得任意相邻的两个第一密封部之间相互接触以连接所述容置结构和所述盖板，以封闭所述容置结构和所述盖板之间连接处的缝隙，形成所述发光组件；
    将所述发光组件电连接至所述基板。
  20. 一种激光设备，包括，
    光源组件，被配置为发出照明光束；所述光源组件包括权利要求1至18中任一项所述的发光装置；
    光学调制组件，被配置为将所述光源组件提供的照明光束进行调制以获得投影光束；以及
    镜头，被配置为将所述投影光束进行成像。
PCT/CN2024/136111 2023-12-08 2024-12-02 发光装置及其制备方法、激光投影设备 Pending WO2025119136A1 (zh)

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