WO2025028573A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2025028573A1
WO2025028573A1 PCT/JP2024/027384 JP2024027384W WO2025028573A1 WO 2025028573 A1 WO2025028573 A1 WO 2025028573A1 JP 2024027384 W JP2024027384 W JP 2024027384W WO 2025028573 A1 WO2025028573 A1 WO 2025028573A1
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Prior art keywords
doping concentration
concentration
peak
region
semiconductor substrate
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English (en)
French (fr)
Japanese (ja)
Inventor
英徳 辻
尚 吉村
竣太郎 谷口
信也 高島
勝典 上野
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Priority to JP2025537478A priority Critical patent/JPWO2025028573A1/ja
Priority to DE112024000321.4T priority patent/DE112024000321T5/de
Publication of WO2025028573A1 publication Critical patent/WO2025028573A1/ja
Priority to US19/277,316 priority patent/US20250351498A1/en
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/417—Insulated-gate bipolar transistors [IGBT] having a drift region having a doping concentration that is higher at the collector side relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/418—Insulated-gate bipolar transistors [IGBT] having a drift region having a doping concentration that is higher at the emitter side relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/161—IGBT having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/415—Insulated-gate bipolar transistors [IGBT] having edge termination structures

Definitions

  • the present invention relates to a semiconductor device.
  • Patent Documents [Patent Document 1] International Publication No. 2016/204227
  • Patent Document 2 [Patent Document 2] JP 2022-062443 A
  • a first aspect of the present invention provides a semiconductor device.
  • the semiconductor device may include a semiconductor substrate having an upper surface and a lower surface and containing carbon.
  • Any of the above semiconductor devices may include a plurality of hydrogen concentration peaks arranged in a line in a depth direction in the semiconductor substrate.
  • Any of the above semiconductor devices may include a plurality of doping concentration peaks arranged corresponding to the plurality of hydrogen concentration peaks.
  • the plurality of doping concentration peaks may include a first doping concentration peak farthest from the lower surface and a second doping concentration peak second farthest from the lower surface.
  • an integrated concentration of Si-H donors at the first doping concentration peak may be N 1
  • an integrated concentration of CiOi-H donors between the first doping concentration peak and the second doping concentration peak may be N COH
  • Any of the above semiconductor devices may satisfy the following conditional formula. When N C ⁇ 1.5 ⁇ 10 15 /cm 3 , N COH /N ⁇ 0.2 ⁇ N C ⁇ 10 -15 +0.35 When N C >1.5 ⁇ 10 15 /cm 3 , N COH /N ⁇ 0.65
  • the plurality of doping concentration peaks may include two doping concentration peaks that are adjacent to each other in the depth direction and have a maximum distance therebetween.
  • the conditional formula may be satisfied even when an integral concentration of Si-H donors at the doping concentration peak that is farther from the bottom surface of the two doping concentration peaks is set to N 1 and an integral concentration of CiOi-H donors between the two doping concentration peaks is set to N COH .
  • the plurality of doping concentration peaks may have a minimum doping concentration peak having a minimum doping concentration, and a first adjacent doping concentration peak adjacent to the minimum doping concentration peak on the lower surface side.
  • the conditional formula may be satisfied even when an integrated concentration of Si-H donors at the minimum doping concentration peak is N 1 and an integrated concentration of CiOi-H donors between the minimum doping concentration peak and the first adjacent doping concentration peak is N COH .
  • each of the doping concentration peaks from the first doping concentration peak to a third doping concentration peak that is second closest to the lower surface may be set as a target doping concentration peak.
  • the doping concentration peak adjacent to the target doping concentration peak on the lower surface side may be set as a second adjacent doping concentration peak.
  • an integrated concentration of Si-H donors at the target doping concentration peak may be set as N 1
  • an integrated concentration of CiOi-H donors between the target doping concentration peak and the second adjacent doping concentration peak may be set as N COH .
  • the conditional expression may be satisfied for all of the target doping concentration peaks.
  • the distance of the first doping concentration peak from the bottom surface in the depth direction may be 30% or more and 50% or less of the thickness of the semiconductor substrate in the depth direction.
  • the distance in the depth direction between the first doping concentration peak and the second doping concentration peak may be 5% or more and 20% or less of the distance in the depth direction from the bottom surface of the first doping concentration peak.
  • the distance in the depth direction between the first doping concentration peak and the second doping concentration peak may be 1 ⁇ m or more and 20 ⁇ m or less.
  • the semiconductor substrate may have an oxygen chemical concentration of 1 ⁇ 10 17 /cm 3 or more and 5 ⁇ 10 17 /cm 3 or less.
  • the semiconductor substrate may have a carbon chemical concentration of 5 ⁇ 10 15 /cm 3 or less.
  • the semiconductor substrate may have a drift region of a first conductivity type, and a buffer region provided between the drift region and the lower surface and having a doping concentration higher than that of the drift region.
  • the first doping concentration peak may be located in the buffer region.
  • a semiconductor device may include a semiconductor substrate having an upper surface and a lower surface and containing carbon. Any of the semiconductor devices may include a plurality of hydrogen concentration peaks arranged in a line in a depth direction in the semiconductor substrate. Any of the semiconductor devices may include a plurality of doping concentration peaks arranged in correspondence with the plurality of hydrogen concentration peaks. In any of the semiconductor devices, the plurality of doping concentration peaks may include a first doping concentration peak farthest from the lower surface and a second doping concentration peak second farthest from the lower surface.
  • a semiconductor device may include a semiconductor substrate having an upper surface and a lower surface, and containing carbon and oxygen. Any of the semiconductor devices may include a plurality of hydrogen concentration peaks arranged in a depth direction in the semiconductor substrate. Any of the semiconductor devices may include a plurality of doping concentration peaks arranged in correspondence with the plurality of hydrogen concentration peaks. In any of the semiconductor devices, the plurality of doping concentration peaks may include a first doping concentration peak farthest from the lower surface, and a second doping concentration peak second farthest from the lower surface.
  • N COH /N ⁇ 8.080E-02 ⁇ ln(x)-2.926 where x N OX ⁇ ⁇ (N C /1E15) ⁇ exp (N OX /1E17) ⁇
  • FIG. 1 is a top view illustrating an example of a semiconductor device 100 according to an embodiment of the present invention.
  • FIG. 2 is an enlarged view of an area D in FIG.
  • FIG. 3 is a diagram showing an example of a cross section taken along the line ee in FIG. 2.
  • FIG. 4 is a diagram showing an example of the hydrogen chemical concentration distribution 220 and the doping concentration distribution 210 taken along the line ff in FIG.
  • FIG. 1 is a diagram for explaining a method for estimating the concentrations of interstitial Si—H donors and CiOi—H donors.
  • FIG. 13 is a diagram showing the results of measuring the ratio of CiOi-H donors.
  • FIG. 13 is a diagram showing the variation N max /N min of the integral value N of the hydrogen donor concentration under each implantation condition.
  • FIG. 13 is a diagram showing the relationship between the CiOi—H donor ratio and the variation N max /N min of the integral value N of the hydrogen donor concentration.
  • FIG. 13 is a graph showing the relationship between the CiOi—H donor ratio and the variation N max /N min of the integral value N of the hydrogen donor concentration.
  • the CiOi-H donor ratio at each carbon chemical concentration is plotted with hexagonal marks when the variation N max /N min is set to 1.3.
  • FIG. 11 is a diagram showing boundary lines corresponding to conditions for making the variation N max /N min equal to or less than 1.7, equal to or less than 1.5, or equal to or less than 1.3.
  • FIG. 13 is a graph showing curves obtained by fitting the CiOi—H donor ratio with the common logarithm of the carbon concentration for each of the implantation conditions 1 to 7. 13 is a graph in which the CiOi-H donor ratio is plotted against the substrate concentration index Ic on the horizontal axis for each of implantation conditions 1 to 7.
  • FIG. 2 is a diagram showing an example of a doping concentration profile of a buffer region 20 according to one embodiment of the present invention.
  • FIG. 11 is a diagram showing an example of a doping concentration distribution in a buffer region 20 according to a reference example.
  • one side in a direction parallel to the depth direction of the semiconductor substrate is referred to as "upper” and the other side as “lower.”
  • the upper surface is referred to as the upper surface and the other surface is referred to as the lower surface.
  • the directions of "upper” and “lower” are not limited to the direction of gravity or the directions when the semiconductor device is mounted.
  • the orthogonal coordinate axes merely identify the relative positions of components, and do not limit a specific direction.
  • the Z-axis does not limit the height direction relative to the ground.
  • the +Z-axis direction and the -Z-axis direction are opposite directions.
  • the Z-axis direction is described without indicating positive or negative, it means the direction parallel to the +Z-axis and -Z-axis.
  • the orthogonal axes parallel to the top and bottom surfaces of the semiconductor substrate are referred to as the X-axis and Y-axis.
  • the axis perpendicular to the top and bottom surfaces of the semiconductor substrate is referred to as the Z-axis.
  • the direction of the Z-axis may be referred to as the depth direction.
  • the direction parallel to the top and bottom surfaces of the semiconductor substrate, including the X-axis and Y-axis may be referred to as the horizontal direction.
  • the region from the center of the semiconductor substrate in the depth direction to the top surface of the semiconductor substrate may be referred to as the top side.
  • the region from the center of the semiconductor substrate in the depth direction to the bottom surface of the semiconductor substrate may be referred to as the bottom side.
  • the conductivity type of a doped region doped with impurities is described as P type or N type.
  • impurities may specifically mean either N type donors or P type acceptors, and may be described as dopants.
  • doping means introducing donors or acceptors into a semiconductor substrate to make it a semiconductor that exhibits N type conductivity or a semiconductor that exhibits P type conductivity.
  • the doping concentration means the concentration of the donor or the concentration of the acceptor in a thermal equilibrium state.
  • the net doping concentration means the net concentration obtained by adding up the donor concentration as the concentration of positive ions and the acceptor concentration as the concentration of negative ions, including the polarity of the charge.
  • the donor concentration is N D and the acceptor concentration is N A
  • the net doping concentration at any position is N D -N A.
  • the net doping concentration may be simply referred to as the doping concentration.
  • Donors have the function of supplying electrons to a semiconductor. Acceptors have the function of receiving electrons from a semiconductor. Donors and acceptors are not limited to impurities themselves.
  • interstitial Si-H which is a combination of interstitial silicon (Si-i) and hydrogen in a silicon semiconductor
  • CiOi-H which is a combination of interstitial carbon (Ci), interstitial oxygen (Oi), and hydrogen
  • CiOi-H or interstitial Si-H may be referred to as hydrogen donors.
  • the semiconductor substrate has N-type bulk donors distributed throughout.
  • the bulk donors are donors due to dopants contained substantially uniformly in the ingot during the manufacture of the ingot that is the basis of the semiconductor substrate.
  • the bulk donors in this example are elements other than hydrogen.
  • the dopants of the bulk donors are, for example, phosphorus, antimony, arsenic, selenium, or sulfur, but are not limited thereto.
  • the bulk donors in this example are phosphorus.
  • the bulk donors are also contained in the P-type region.
  • the semiconductor substrate may be a wafer cut from a semiconductor ingot, or may be a chip obtained by dividing the wafer.
  • the semiconductor ingot may be manufactured by any of the Czochralski method (CZ method), the magnetic field-applied Czochralski method (MCZ method), and the float zone method (FZ method).
  • the ingot in this example is manufactured by the MCZ method.
  • the oxygen concentration contained in the substrate manufactured by the MCZ method is 1 ⁇ 10 17 to 7 ⁇ 10 17 /cm 3.
  • the oxygen concentration contained in the substrate manufactured by the FZ method is 1 ⁇ 10 15 to 5 ⁇ 10 16 /cm 3.
  • the bulk donor concentration may be the chemical concentration of the bulk donors distributed throughout the semiconductor substrate, and may be a value between 90% and 100% of the chemical concentration.
  • the semiconductor substrate may be a non-doped substrate that does not contain dopants such as phosphorus.
  • the bulk donor concentration (D0) of the non-doped substrate is, for example, 1 ⁇ 10 10 /cm 3 or more and 5 ⁇ 10 12 /cm 3 or less.
  • the bulk donor concentration (D0) of the non-doped substrate is preferably 1 ⁇ 10 11 /cm 3 or more.
  • the bulk donor concentration (D0) of the non-doped substrate is preferably 5 ⁇ 10 12 /cm 3 or less.
  • the respective concentrations in the present invention may be values at room temperature. As an example of the values at room temperature, values at 300 K (Kelvin) (approximately 26.9° C.) may be used.
  • P+ type or N+ type when P+ type or N+ type is mentioned, it means that the doping concentration is higher than P type or N type, and when P- type or N- type is mentioned, it means that the doping concentration is lower than P type or N type. Furthermore, when P++ type or N++ type is mentioned in this specification, it means that the doping concentration is higher than P+ type or N+ type.
  • the unit system in this specification is the SI unit system unless otherwise specified. The unit of length may be expressed in cm, but various calculations may be performed after converting to meters (m).
  • chemical concentration refers to the atomic density of an impurity measured regardless of the state of electrical activation.
  • the chemical concentration can be measured, for example, by secondary ion mass spectrometry (SIMS).
  • the above-mentioned net doping concentration can be measured by a voltage-capacitance measurement method (CV method).
  • the carrier concentration measured by a spreading resistance measurement method (SR method) may be the net doping concentration.
  • the carrier concentration measured by the CV method or the SR method may be a value in a thermal equilibrium state.
  • the donor concentration is sufficiently larger than the acceptor concentration in an N-type region, the carrier concentration in that region may be the donor concentration.
  • the carrier concentration in that region may be the acceptor concentration.
  • the doping concentration in an N-type region may be referred to as the donor concentration
  • the doping concentration in a P-type region may be referred to as the acceptor concentration.
  • the peak value may be taken as the concentration of the donor, acceptor or net doping in the region.
  • the concentration of the donor, acceptor or net doping is almost uniform, the average value of the concentration of the donor, acceptor or net doping in the region may be taken as the concentration of the donor, acceptor or net doping.
  • atoms/cm 3 or /cm 3 is used to express concentration per unit volume. This unit is used for donor or acceptor concentration or chemical concentration in a semiconductor substrate. The notation of atoms may be omitted.
  • the carrier concentration measured by the SR method may be lower than the donor or acceptor concentration.
  • the carrier mobility of the semiconductor substrate may be lower than the value in the crystalline state. The reduction in carrier mobility occurs when the carriers are scattered due to disorder in the crystal structure caused by lattice defects, etc.
  • the donor or acceptor concentration calculated from the carrier concentration measured by the CV method or the SR method may be lower than the chemical concentration of the element representing the donor or acceptor.
  • the donor concentration of phosphorus or arsenic, which acts as a donor in a silicon semiconductor, or the acceptor concentration of boron, which acts as an acceptor is about 99% of the chemical concentration.
  • the donor concentration of hydrogen, which acts as a donor in a silicon semiconductor is about 0.1% to 10% of the chemical concentration of hydrogen.
  • FIG. 1 is a top view showing an example of a semiconductor device 100 according to one embodiment of the present invention.
  • FIG. 1 the positions of each component projected onto the top surface of a semiconductor substrate 10 are shown.
  • FIG. 1 only some of the components of the semiconductor device 100 are shown, and some components are omitted.
  • the semiconductor device 100 includes a semiconductor substrate 10.
  • the semiconductor substrate 10 is a substrate formed of a semiconductor material.
  • the semiconductor substrate 10 is a silicon substrate.
  • the semiconductor substrate 10 has edges 162 when viewed from above. When simply referred to as a top view in this specification, it means that the semiconductor substrate 10 is viewed from the top side.
  • the semiconductor substrate 10 has two sets of edges 162 that face each other when viewed from above. In FIG. 1, the X-axis and Y-axis are parallel to one of the edges 162. The Z-axis is perpendicular to the top surface of the semiconductor substrate 10.
  • the semiconductor substrate 10 has an active portion 160.
  • the active portion 160 is a region through which a main current flows in the depth direction between the upper and lower surfaces of the semiconductor substrate 10 when the semiconductor device 100 is in operation.
  • An emitter electrode is provided above the active portion 160, but is omitted in FIG. 1.
  • the active portion 160 may refer to the region that overlaps with the emitter electrode when viewed from above.
  • the active portion 160 may also include the region sandwiched between the active portions 160 when viewed from above.
  • the active section 160 is provided with at least one of a transistor section 70 including a transistor element such as an IGBT (Insulated Gate Bipolar Transistor) and a diode section 80 including a diode element such as a free wheel diode (FWD).
  • IGBT Insulated Gate Bipolar Transistor
  • FWD free wheel diode
  • the transistor sections 70 and the diode sections 80 are alternately arranged along a predetermined arrangement direction (the X-axis direction in this example) on the upper surface of the semiconductor substrate 10.
  • the semiconductor device 100 in this example is a reverse conducting IGBT (RC-IGBT).
  • the region in which the transistor section 70 is arranged is marked with the symbol "I”
  • the region in which the diode section 80 is arranged is marked with the symbol "F”.
  • the direction perpendicular to the arrangement direction in a top view may be referred to as the extension direction (the Y-axis direction in FIG. 1).
  • the transistor section 70 and the diode section 80 may each have a longitudinal direction in the extension direction.
  • the length of the transistor section 70 in the Y-axis direction is greater than its width in the X-axis direction.
  • the length of the diode section 80 in the Y-axis direction is greater than its width in the X-axis direction.
  • the extension direction of the transistor section 70 and the diode section 80 may be the same as the longitudinal direction of each trench section described later.
  • the diode section 80 has an N+ type cathode region in a region that contacts the lower surface of the semiconductor substrate 10.
  • the region in which the cathode region is provided is referred to as the diode section 80.
  • the diode section 80 is a region that overlaps with the cathode region when viewed from above.
  • a P+ type collector region may be provided in a region of the lower surface of the semiconductor substrate 10 other than the cathode region.
  • the diode section 80 may also include an extension region 81 that extends the diode section 80 in the Y-axis direction to the gate wiring described below.
  • a collector region is provided on the lower surface of the extension region 81.
  • the transistor section 70 has a P+ type collector region in a region that contacts the bottom surface of the semiconductor substrate 10.
  • the transistor section 70 has a gate structure that has an N type emitter region, a P type base region, a gate conductive portion, and a gate insulating film periodically arranged on the top surface side of the semiconductor substrate 10.
  • the semiconductor device 100 may have one or more pads above the semiconductor substrate 10.
  • the semiconductor device 100 in this example has a gate pad 164.
  • the semiconductor device 100 may also have pads such as an anode pad, a cathode pad, and a current detection pad.
  • Each pad is disposed near an edge 162.
  • the vicinity of the edge 162 refers to the area between the edge 162 and the emitter electrode in a top view.
  • each pad may be connected to an external circuit via wiring such as a wire.
  • a gate potential is applied to the gate pad 164.
  • the gate pad 164 is electrically connected to the conductive portion of the gate trench portion of the active portion 160.
  • the semiconductor device 100 includes a gate wiring that connects the gate pad 164 and the gate trench portion. In FIG. 1, the gate wiring is hatched with diagonal lines.
  • the gate wiring in this example has a peripheral gate wiring 130 and an active side gate wiring 131.
  • the peripheral gate wiring 130 is disposed between the active portion 160 and an edge 162 of the semiconductor substrate 10 in a top view.
  • the peripheral gate wiring 130 in this example surrounds the active portion 160 in a top view.
  • the region surrounded by the peripheral gate wiring 130 in a top view may be the active portion 160.
  • a well region is formed below the gate wiring.
  • the well region is a P-type region with a higher concentration than the base region described below, and is formed from the top surface of the semiconductor substrate 10 to a position deeper than the base region.
  • the region surrounded by the well region in a top view may be the active portion 160.
  • the peripheral gate wiring 130 is connected to the gate pad 164.
  • the peripheral gate wiring 130 is disposed above the semiconductor substrate 10.
  • the peripheral gate wiring 130 may be a metal wiring containing aluminum or the like.
  • the active side gate wiring 131 is provided in the active section 160. By providing the active side gate wiring 131 in the active section 160, the variation in wiring length from the gate pad 164 can be reduced for each region of the semiconductor substrate 10.
  • the peripheral gate wiring 130 and the active side gate wiring 131 are connected to the gate trench portion of the active portion 160.
  • the peripheral gate wiring 130 and the active side gate wiring 131 are disposed above the semiconductor substrate 10.
  • the peripheral gate wiring 130 and the active side gate wiring 131 may be wiring formed of a semiconductor such as polysilicon doped with impurities.
  • the active side gate wiring 131 may be connected to the peripheral gate wiring 130.
  • the active side gate wiring 131 is provided extending in the X-axis direction from one peripheral gate wiring 130 to the other peripheral gate wiring 130 sandwiching the active section 160, so as to cross the active section 160 at approximately the center in the Y-axis direction.
  • the transistor section 70 and the diode section 80 may be arranged alternately in the X-axis direction in each divided region.
  • the semiconductor device 100 may also include a temperature sensor (not shown) that is a PN junction diode formed of polysilicon or the like, and a current detector (not shown) that simulates the operation of a transistor section provided in the active section 160.
  • a temperature sensor not shown
  • a current detector not shown
  • the semiconductor device 100 includes an edge termination structure 90 between the active portion 160 and the edge 162 when viewed from above.
  • the edge termination structure 90 in this example is disposed between the peripheral gate wiring 130 and the edge 162.
  • the edge termination structure 90 reduces electric field concentration on the upper surface side of the semiconductor substrate 10.
  • the edge termination structure 90 may include at least one of a guard ring, a field plate, and a resurf that are arranged in a ring shape surrounding the active portion 160.
  • Region D includes transistor section 70, diode section 80, and active side gate wiring 131.
  • the semiconductor device 100 of this example includes a gate trench section 40, a dummy trench section 30, a well region 11, an emitter region 12, a base region 14, and a contact region 15 provided inside the upper surface side of the semiconductor substrate 10.
  • the gate trench section 40 and the dummy trench section 30 are each an example of a trench section.
  • the semiconductor device 100 of this example also includes an emitter electrode 52 and an active side gate wiring 131 provided above the upper surface of the semiconductor substrate 10.
  • the emitter electrode 52 and the active side gate wiring 131 are provided separately from each other.
  • An interlayer insulating film is provided between the emitter electrode 52 and the active gate wiring 131 and the upper surface of the semiconductor substrate 10, but is omitted in FIG. 2.
  • contact holes 54 are provided in the interlayer insulating film, penetrating the interlayer insulating film. In FIG. 2, each contact hole 54 is hatched with diagonal lines.
  • the emitter electrode 52 is provided above the gate trench portion 40, the dummy trench portion 30, the well region 11, the emitter region 12, the base region 14, and the contact region 15.
  • the emitter electrode 52 contacts the emitter region 12, the contact region 15, and the base region 14 on the upper surface of the semiconductor substrate 10 through a contact hole 54.
  • the emitter electrode 52 is also connected to a dummy conductive portion in the dummy trench portion 30 through a contact hole provided in the interlayer insulating film.
  • the emitter electrode 52 may be connected to the dummy conductive portion of the dummy trench portion 30 at the tip of the dummy trench portion 30 in the Y-axis direction.
  • the dummy conductive portion of the dummy trench portion 30 does not need to be connected to the emitter electrode 52 and the gate conductive portion, and may be controlled to a potential different from the potential of the emitter electrode 52 and the potential of the gate conductive portion.
  • the active side gate wiring 131 is connected to the gate trench portion 40 through a contact hole provided in the interlayer insulating film.
  • the active side gate wiring 131 may be connected to the gate conductive portion of the gate trench portion 40 at the tip portion 41 of the gate trench portion 40 in the Y-axis direction.
  • the active side gate wiring 131 is not connected to the dummy conductive portion in the dummy trench portion 30.
  • the emitter electrode 52 is formed of a material containing metal.
  • FIG. 2 shows the range in which the emitter electrode 52 is provided.
  • the emitter electrode 52 is formed of aluminum or an aluminum-silicon alloy, such as a metal alloy such as AlSi or AlSiCu.
  • the emitter electrode 52 may have a barrier metal made of titanium or a titanium compound under the region made of aluminum or the like.
  • the emitter electrode 52 may have a plug formed by embedding tungsten or the like in the contact hole so as to contact the barrier metal and aluminum or the like.
  • the well region 11 is provided so as to overlap with the active side gate wiring 131.
  • the well region 11 is also provided so as to extend by a predetermined width into an area where it does not overlap with the active side gate wiring 131.
  • the well region 11 is provided away from the end of the contact hole 54 in the Y-axis direction toward the active side gate wiring 131.
  • the well region 11 is a region of a second conductivity type having a higher doping concentration than the base region 14.
  • the base region 14 is P- type
  • the well region 11 is P+ type.
  • the transistor section 70 and the diode section 80 each have multiple trench sections arranged in the arrangement direction.
  • one or more gate trench sections 40 and one or more dummy trench sections 30 are alternately provided along the arrangement direction.
  • the diode section 80 of this example multiple dummy trench sections 30 are provided along the arrangement direction.
  • no gate trench section 40 is provided in the diode section 80 of this example.
  • the gate trench portion 40 in this example may have two straight portions 39 (portions of the trench that are straight along the extension direction) that extend along an extension direction perpendicular to the arrangement direction, and a tip portion 41 that connects the two straight portions 39.
  • the extension direction in FIG. 2 is the Y-axis direction.
  • the tip 41 is curved when viewed from above.
  • the tip 41 connects the ends of the two straight portions 39 in the Y-axis direction, thereby reducing electric field concentration at the ends of the straight portions 39.
  • the dummy trench portion 30 is provided between each straight portion 39 of the gate trench portion 40.
  • One dummy trench portion 30 may be provided between each straight portion 39, or multiple dummy trench portions 30 may be provided.
  • the dummy trench portion 30 may have a straight line shape extending in the extension direction, and may have a straight line portion 29 and a tip portion 31, similar to the gate trench portion 40.
  • the semiconductor device 100 shown in FIG. 2 includes both a straight line dummy trench portion 30 without a tip portion 31 and a dummy trench portion 30 with a tip portion 31.
  • the diffusion depth of the well region 11 may be deeper than the depth of the gate trench portion 40 and the dummy trench portion 30.
  • the ends in the Y-axis direction of the gate trench portion 40 and the dummy trench portion 30 are provided in the well region 11 when viewed from above. In other words, at the ends in the Y-axis direction of each trench portion, the bottoms in the depth direction of each trench portion are covered by the well region 11. This makes it possible to reduce electric field concentration at the bottoms of each trench portion.
  • the mesa portion refers to the region inside the semiconductor substrate 10 that is sandwiched between the trench portions.
  • the upper end of the mesa portion is the upper surface of the semiconductor substrate 10.
  • the depth position of the lower end of the mesa portion is the same as the depth position of the lower end of the trench portion.
  • the mesa portion is provided on the upper surface of the semiconductor substrate 10, extending in the extension direction (Y-axis direction) along the trench.
  • the transistor portion 70 is provided with a mesa portion 60
  • the diode portion 80 is provided with a mesa portion 61.
  • the term "mesa portion” refers to both the mesa portion 60 and the mesa portion 61.
  • a base region 14 is provided in each mesa portion. Of the base regions 14 exposed on the upper surface of the semiconductor substrate 10 in the mesa portion, the region closest to the active side gate wiring 131 is referred to as the base region 14-e. In FIG. 2, the base region 14-e is shown at one end in the extension direction of each mesa portion, but a base region 14-e is also provided at the other end of each mesa portion.
  • at least one of a first conductive type emitter region 12 and a second conductive type contact region 15 may be provided in a region sandwiched between the base regions 14-e in a top view.
  • the emitter region 12 is N+ type
  • the contact region 15 is P+ type.
  • the emitter region 12 and the contact region 15 may be provided between the base region 14 and the upper surface of the semiconductor substrate 10 in the depth direction.
  • the mesa portion 60 of the transistor portion 70 has an emitter region 12 exposed on the upper surface of the semiconductor substrate 10.
  • the emitter region 12 is provided in contact with the gate trench portion 40.
  • the mesa portion 60 in contact with the gate trench portion 40 may have a contact region 15 exposed on the upper surface of the semiconductor substrate 10.
  • the contact regions 15 and emitter regions 12 in the mesa portion 60 are each provided from one trench portion to the other trench portion in the X-axis direction. As an example, the contact regions 15 and emitter regions 12 in the mesa portion 60 are alternately arranged along the extension direction of the trench portion (Y-axis direction).
  • the contact region 15 and emitter region 12 of the mesa portion 60 may be provided in a stripe shape along the extension direction (Y-axis direction) of the trench portion.
  • the emitter region 12 is provided in a region that contacts the trench portion, and the contact region 15 is provided in a region sandwiched between the emitter regions 12.
  • the mesa portion 61 of the diode section 80 does not have an emitter region 12.
  • a base region 14 and a contact region 15 may be provided on the upper surface of the mesa portion 61.
  • a contact region 15 may be provided in contact with each of the base regions 14-e.
  • a base region 14 may be provided in the region sandwiched between the contact regions 15 on the upper surface of the mesa portion 61.
  • the base region 14 may be disposed in the entire region sandwiched between the contact regions 15.
  • a contact hole 54 is provided above each mesa portion.
  • the contact hole 54 is located in a region sandwiched between the base regions 14-e.
  • the contact holes 54 are provided above the contact region 15, the base region 14, and the emitter region 12.
  • the contact holes 54 are not provided in the regions corresponding to the base region 14-e and the well region 11.
  • the contact holes 54 may be located in the center of the arrangement direction (X-axis direction) of the mesa portions 60.
  • an N+ type cathode region 82 is provided in a region adjacent to the underside of the semiconductor substrate 10.
  • a P+ type collector region 22 may be provided in the region of the underside of the semiconductor substrate 10 where the cathode region 82 is not provided.
  • the cathode region 82 and the collector region 22 are provided between the underside 23 of the semiconductor substrate 10 and the buffer region 20.
  • the boundary between the cathode region 82 and the collector region 22 is indicated by a dotted line.
  • the cathode region 82 is disposed away from the well region 11 in the Y-axis direction. This ensures a distance between the cathode region 82 and the P-type region (well region 11), which has a relatively high doping concentration and is formed deep, and improves the breakdown voltage.
  • the end of the cathode region 82 in the Y-axis direction is disposed farther from the well region 11 than the end of the contact hole 54 in the Y-axis direction.
  • the end of the cathode region 82 in the Y-axis direction may be disposed between the well region 11 and the contact hole 54.
  • FIG. 3 is a diagram showing an example of the e-e cross section in FIG. 2.
  • the e-e cross section is an XZ plane passing through the emitter region 12 and the cathode region 82.
  • the semiconductor device 100 of this example has a semiconductor substrate 10, an interlayer insulating film 38, an emitter electrode 52, and a collector electrode 24.
  • the interlayer insulating film 38 is provided on the upper surface of the semiconductor substrate 10.
  • the interlayer insulating film 38 is a film that includes at least one layer of an insulating film such as silicate glass doped with impurities such as boron or phosphorus, a thermal oxide film, and other insulating films.
  • the interlayer insulating film 38 is provided with the contact hole 54 described in FIG. 2.
  • the emitter electrode 52 is provided above the interlayer insulating film 38.
  • the emitter electrode 52 is in contact with the upper surface 21 of the semiconductor substrate 10 through a contact hole 54 in the interlayer insulating film 38.
  • the collector electrode 24 is provided on the lower surface 23 of the semiconductor substrate 10.
  • the emitter electrode 52 and the collector electrode 24 are made of a metal material such as aluminum.
  • the direction connecting the emitter electrode 52 and the collector electrode 24 (the Z-axis direction) is referred to as the depth direction.
  • the semiconductor substrate 10 has an N-type or N-type drift region 18.
  • the drift region 18 is provided in each of the transistor portion 70 and the diode portion 80.
  • an N+ type emitter region 12 and a P- type base region 14 are provided in this order from the upper surface 21 side of the semiconductor substrate 10.
  • a drift region 18 is provided below the base region 14.
  • An N+ type accumulation region 16 may be provided in the mesa portion 60. The accumulation region 16 is disposed between the base region 14 and the drift region 18.
  • the emitter region 12 is exposed on the upper surface 21 of the semiconductor substrate 10 and is provided in contact with the gate trench portion 40.
  • the emitter region 12 may be in contact with the trench portions on both sides of the mesa portion 60.
  • the emitter region 12 has a higher doping concentration than the drift region 18.
  • the base region 14 is provided below the emitter region 12. In this example, the base region 14 is provided in contact with the emitter region 12. The base region 14 may be in contact with the trench portions on both sides of the mesa portion 60.
  • the accumulation region 16 is provided below the base region 14.
  • the accumulation region 16 is an N+ type region with a higher doping concentration than the drift region 18. In other words, the accumulation region 16 has a higher donor concentration than the drift region 18.
  • the carrier injection enhancement effect IE effect
  • the accumulation region 16 may be provided so as to cover the entire lower surface of the base region 14 in each mesa portion 60.
  • the mesa portion 61 of the diode section 80 has a P-type base region 14 in contact with the upper surface 21 of the semiconductor substrate 10.
  • a drift region 18 is provided below the base region 14.
  • an accumulation region 16 may be provided below the base region 14.
  • an N+ type buffer region 20 may be provided below the drift region 18.
  • the doping concentration of the buffer region 20 is higher than the doping concentration of the drift region 18.
  • the buffer region 20 may have a concentration peak with a higher doping concentration than the drift region 18.
  • the doping concentration of the concentration peak refers to the doping concentration at the apex of the concentration peak.
  • the doping concentration of the drift region 18 may be the average value of the doping concentration in a region where the doping concentration distribution is approximately flat.
  • the buffer region 20 may have two or more concentration peaks in the depth direction (Z-axis direction) of the semiconductor substrate 10.
  • the concentration peak of the buffer region 20 may be located at the same depth as the chemical concentration peak of hydrogen (protons) or phosphorus, for example.
  • the buffer region 20 may function as a field stop layer that prevents the depletion layer spreading from the lower end of the base region 14 from reaching the P+ type collector region 22 and the N+ type cathode region 82.
  • a P+ type collector region 22 is provided below the buffer region 20.
  • the acceptor concentration of the collector region 22 is higher than the acceptor concentration of the base region 14.
  • the collector region 22 may contain the same acceptor as the base region 14, or may contain a different acceptor.
  • the acceptor of the collector region 22 is, for example, boron.
  • an N+ type cathode region 82 is provided below the buffer region 20.
  • the donor concentration of the cathode region 82 is higher than the donor concentration of the drift region 18.
  • the donor of the cathode region 82 is, for example, hydrogen or phosphorus.
  • the elements that serve as the donor and acceptor of each region are not limited to the above-mentioned examples.
  • the collector region 22 and the cathode region 82 are exposed to the lower surface 23 of the semiconductor substrate 10 and are connected to the collector electrode 24.
  • the collector electrode 24 may be in contact with the entire lower surface 23 of the semiconductor substrate 10.
  • the emitter electrode 52 and the collector electrode 24 are formed of a metal material such as aluminum.
  • each trench portion is provided from the upper surface 21 of the semiconductor substrate 10, penetrating the base region 14, to below the base region 14. In regions where at least one of the emitter region 12, the contact region 15, and the accumulation region 16 is provided, each trench portion also penetrates these doped regions.
  • the trench portion penetrating the doped region is not limited to being manufactured in the order of forming the doped region and then the trench portion.
  • the trench portion penetrating the doped region also includes a trench portion formed after the trench portion is formed.
  • the transistor section 70 has a gate trench section 40 and a dummy trench section 30.
  • the diode section 80 has a dummy trench section 30, but does not have a gate trench section 40.
  • the boundary between the diode section 80 and the transistor section 70 in the X-axis direction is the boundary between the cathode region 82 and the collector region 22.
  • the gate trench portion 40 has a gate trench provided on the upper surface 21 of the semiconductor substrate 10, a gate insulating film 42, and a gate conductive portion 44.
  • the gate insulating film 42 is provided to cover the inner wall of the gate trench.
  • the gate insulating film 42 may be formed by oxidizing or nitriding the semiconductor on the inner wall of the gate trench.
  • the gate conductive portion 44 is provided inside the gate insulating film 42 inside the gate trench. In other words, the gate insulating film 42 insulates the gate conductive portion 44 from the semiconductor substrate 10.
  • the gate conductive portion 44 is formed of a conductive material such as polysilicon.
  • the gate conductive portion 44 may be provided longer than the base region 14 in the depth direction.
  • the gate trench portion 40 in this cross section is covered by an interlayer insulating film 38 on the upper surface 21 of the semiconductor substrate 10.
  • the gate conductive portion 44 is electrically connected to the gate wiring.
  • a predetermined gate voltage is applied to the gate conductive portion 44, a channel is formed by an electron inversion layer in the surface layer of the interface of the base region 14 that contacts the gate trench portion 40.
  • the dummy trench portion 30 may have the same structure as the gate trench portion 40 in the cross section.
  • the dummy trench portion 30 has a dummy trench, a dummy insulating film 32, and a dummy conductive portion 34 provided on the upper surface 21 of the semiconductor substrate 10.
  • the dummy conductive portion 34 is electrically connected to the emitter electrode 52.
  • the dummy insulating film 32 is provided to cover the inner wall of the dummy trench.
  • the dummy conductive portion 34 is provided inside the dummy trench and is provided on the inside of the dummy insulating film 32.
  • the dummy insulating film 32 insulates the dummy conductive portion 34 from the semiconductor substrate 10.
  • the dummy conductive portion 34 may be formed of the same material as the gate conductive portion 44.
  • the dummy conductive portion 34 is formed of a conductive material such as polysilicon.
  • the dummy conductive portion 34 may have the same length in the depth direction as the gate conductive portion 44.
  • the gate trench portion 40 and the dummy trench portion 30 are covered by an interlayer insulating film 38 on the upper surface 21 of the semiconductor substrate 10.
  • the bottoms of the dummy trench portion 30 and the gate trench portion 40 may be curved and convex downward (curved in cross section).
  • FIG. 4 is a diagram showing an example of the hydrogen chemical concentration distribution 220 and the doping concentration distribution 210 on the line f-f in FIG. 3.
  • the vertical axis in FIG. 4 is a common logarithm (log) scale for both the hydrogen chemical concentration distribution 220 and the doping concentration distribution 210.
  • the horizontal axis in FIG. 4 (depth position) is a linear scale.
  • the line f-f is a line parallel to the Z axis that passes through the buffer region 20.
  • the horizontal axis in FIG. 4 indicates the depth position (position in the Z axis direction) in the semiconductor substrate 10.
  • the bottom end position of the buffer region 20 is taken as the reference position (0) in the Z axis direction, and the distance from the reference position is taken as the position in the Z axis direction.
  • the valley in the doping concentration distribution due to the PN junction between the collector region 22 and the buffer region 20 is omitted in FIG. 4 and the like.
  • the entire semiconductor substrate 10 contains bulk donors.
  • the concentration of the bulk donors is BD.
  • the doping concentration of the drift region 18 may be the same as or different from the bulk donor concentration BD.
  • the buffer region 20 has a higher doping concentration than the drift region 18.
  • the semiconductor substrate 10 has a plurality of hydrogen concentration peaks 221 arranged in a line in the depth direction.
  • the hydrogen concentration peaks 221 are mountain-shaped portions of the distribution 220 where the hydrogen chemical concentration shows a maximum value in the depth direction.
  • One or more hydrogen concentration peaks 221 may be provided in the buffer region 20.
  • At least one hydrogen concentration peak 221 may be provided on the upper surface 21 side of the buffer region 20. In this example, all of the hydrogen concentration peaks 221 are provided in the buffer region 20.
  • the semiconductor substrate 10 has a plurality of doping concentration peaks 201 arranged corresponding to a plurality of hydrogen concentration peaks 221.
  • the doping concentration peaks 201 are mountain-shaped portions of the distribution 210 where the doping concentration shows a maximum value in the depth direction.
  • the number of doping concentration peaks 201 may be two or more, three or more, four or more, or five or more. In regions where the hydrogen chemical concentration is high, many hydrogen donors are formed, so that the doping concentration peaks 201 are formed corresponding to the hydrogen concentration peaks 221.
  • the doping concentration peaks 201 may be provided for at least one hydrogen concentration peak 221. In this example, the doping concentration peaks 201 are provided for all of the hydrogen concentration peaks 221.
  • the peak furthest from the lower surface 23 is the first doping concentration peak 201-1, and the peak second furthest from the lower surface 23 is the second doping concentration peak 201-2.
  • the peak kth furthest from the lower surface 23 is the kth doping concentration peak 201-k.
  • the region between the kth doping concentration peak 201-k and the (k+1)th doping concentration peak 201-(k+1) is the kth inter-peak region 202-k.
  • the inter-peak region 202 may include a portion where the doping concentration exhibits a minimum value.
  • the doping concentration of the inter-peak region 202 is also higher than the doping concentration of the drift region 18.
  • the hydrogen concentration peak 221 and the doping concentration peak 201 correspond to each other when the apex of one concentration peak is located within the full width at half maximum of the other concentration peak.
  • the distance between the apexes of the two concentration peaks may be 2 ⁇ m or less, 1 ⁇ m or less, or 0.5 ⁇ m or less.
  • At least one doping concentration peak 201 may be provided in the buffer region 20.
  • a first doping concentration peak 201-1 may be disposed in the buffer region 20. All doping concentration peaks 201 may be disposed in the buffer region 20.
  • the buffer region 20 may or may not have a doping concentration peak other than the doping concentration peak 201.
  • the buffer region 20 may or may not have a doping concentration peak formed by a donor other than a hydrogen donor. All doping concentration peaks in the buffer region 20 in this example are doping concentration peaks 201 formed by a hydrogen donor.
  • the hydrogen chemical concentration distribution 220 is omitted, but a hydrogen concentration peak 221 is provided for every doping concentration peak 201.
  • hydrogen donors are formed near the implantation position of the hydrogen ions and in the region through which the hydrogen ions have passed.
  • hydrogen ions are implanted from the bottom surface 23 to depth positions Z1, Z2, Z3, and Z4.
  • High concentrations of hydrogen donors are formed near depth positions Z1 to Z4, and hydrogen donors are also formed in the region through which the hydrogen ions have passed from the bottom surface 23 to depth position Z1. This forms multiple doping concentration peaks 201 and one or more inter-peak regions 202.
  • Hydrogen ions may be implanted from the top surface 21 of the semiconductor substrate 10.
  • the doping concentration of each region of the semiconductor substrate 10 affects the characteristics of the semiconductor device 100.
  • the doping concentration of the buffer region 20 affects the breakdown voltage of the semiconductor device 100.
  • the concentration variation of the hydrogen donors formed by implanting hydrogen ions is small.
  • the concentration of the hydrogen donors varies depending on the carbon concentration of the semiconductor device 100, etc. In particular, in an MCZ substrate with a high oxygen concentration, there is a tendency for the concentration variation of the hydrogen donors to increase due to the variation in the carbon concentration.
  • Hydrogen donors include interstitial Si-H donors and CiOi-H donors. Because CiOi-H donors contain carbon, the concentration of the CiOi-H donors is affected by the carbon chemical concentration of the semiconductor substrate 10. On the other hand, the concentration of the interstitial Si-H donors is relatively less affected by the carbon chemical concentration of the semiconductor substrate 10. For this reason, by making the concentration of the interstitial Si-H donors relatively high and the concentration of the CiOi-H donors relatively low, the effect of the carbon chemical concentration of the semiconductor substrate 10 is reduced, and the concentration of the hydrogen donors can be precisely controlled.
  • the increase in doping concentration at the doping concentration peak 201 varies relatively little with the carbon chemical concentration, while the increase in doping concentration at the inter-peak region 202 varies relatively much with the carbon chemical concentration.
  • the increase in doping concentration corresponds to the concentration of hydrogen donors formed by implanting hydrogen ions. Therefore, it is estimated that the doping concentration peak 201 is mainly formed by interstitial Si-H donors, and the inter-peak region 202 is mainly formed by CiOi-H donors. Therefore, the concentrations of interstitial Si-H donors and CiOi-H donors can be estimated from the increase in doping concentration at the doping concentration peak 201 and the inter-peak region 202.
  • the increase in doping concentration may be calculated by subtracting the bulk donor concentration BD from the doping concentration at the target position, or may be calculated by subtracting the doping concentration of the drift region 18 from the doping concentration at the target position.
  • FIG. 5 is a diagram for explaining a method for estimating the concentrations of interstitial Si-H donors and CiOi-H donors.
  • Each vertical axis in FIG. 5 indicates the doping concentration or the increase therein, and all vertical axes are linear scales.
  • the concentrations of interstitial Si-H donors and CiOi-H donors in the first doping concentration peak 201-1 and the first inter-peak region 202-1 are estimated.
  • the distribution of the increase in the doping concentration in the first doping concentration peak 201-1, the first inter-peak region 202-1, and the second doping concentration peak 201-2 is shown by a dashed line.
  • the increase in the doping concentration in this example is the increase in the doping concentration based on the bulk donor concentration BD. As described above, the increase in the doping concentration corresponds to the concentration of the hydrogen donor.
  • the first doping concentration peak 201-1 is fitted with a Gaussian distribution 211-1
  • the second doping concentration peak 201-2 is fitted with a Gaussian distribution 211-2.
  • Each Gaussian distribution 211 may have a predetermined half-width at half maximum.
  • the half-width at half maximum is, for example, 2.47 ⁇ m.
  • the full-width at half maximum of the hydrogen concentration peak 221-k corresponding to each doping concentration peak 201-k may be used as the full-width at half maximum of each Gaussian distribution 211-k.
  • the full-width at half maximum of each doping concentration peak 201-k may also be used as the full-width at half maximum of each Gaussian distribution 211-k.
  • the fitting may be performed by applying the depth position and apex concentration of each doping concentration peak 201 to the Gaussian distribution 211.
  • the integral concentration N K obtained by integrating the concentration of each Gaussian distribution 211-k in the depth direction corresponds to the integral concentration N K of the interstitial Si—H donor in each doping concentration peak 201-k.
  • the integral concentration of the interstitial Si—H donor included in the first doping concentration peak 201-1 is N 1
  • the integral concentration of the interstitial Si—H donor included in the second doping concentration peak 201-2 is N 2 .
  • a remaining distribution 212 obtained by subtracting Gaussian distribution 211-1 and Gaussian distribution 211-2 from the distribution of the increase in the doping concentration corresponds to the concentration distribution of the CiOi-H donor.
  • An integrated concentration N COH obtained by integrating the concentration of the remaining distribution 212 in the depth direction corresponds to the integrated concentration N COH of the CiOi-H donor in the region from depth position Z1 to depth position Z2.
  • the ratio of CiOi-H donors is defined as NCOH /N. Note that in the regions from depth position Zk to depth position Z(k+1), the integrated concentrations of interstitial Si-H donors and CiOi-H donors can be similarly estimated.
  • FIG. 6 is a diagram showing the results of measuring the ratio of CiOi-H donors.
  • the ratio N COH /N of CiOi-H donors is measured for a plurality of types of semiconductor devices 100 in which the hydrogen ion implantation conditions and the carbon chemical concentration of the semiconductor substrate 10 are different.
  • the ratio of CiOi-H donors refers to the ratio in the region from the depth position Z1 to Z2 described above.
  • the horizontal axis of FIG. 6 indicates the carbon chemical concentration of the semiconductor substrate 10, and the vertical axis indicates the CiOi-H donor ratio.
  • six types of conditions No. 1 to No. 6 are used as the hydrogen ion implantation conditions.
  • the implantation conditions with smaller numbers have at least one of the number of steps of the depth positions at which hydrogen ions are implanted and the dose amount of hydrogen ions for each depth position larger than the implantation conditions with larger numbers.
  • the implantation conditions with smaller numbers have a tendency to have a larger number of hydrogen concentration peaks 221 and a higher peak concentration of the hydrogen concentration peaks 221.
  • the CiOi-H donor ratio can be controlled by the hydrogen ion implantation conditions.
  • the CiOi-H donor ratio shows a tendency to saturate as the carbon chemical concentration increases.
  • the CiOi-H donor also contains oxygen. For this reason, the oxygen chemical concentration of the semiconductor substrate 10 can also affect the concentration of the CiOi-H donor.
  • the oxygen chemical concentration of the semiconductor substrate 10 under each condition of this example is 1 ⁇ 10 17 /cm 3 or more and 5 ⁇ 10 17 /cm 3 or less.
  • the carbon chemical concentration of the semiconductor substrate 10 is 0.26 ⁇ 10 15 /cm 3 or more and 2.6 ⁇ 10 15 /cm 3 or less. Therefore, the oxygen chemical concentration is sufficiently higher than the carbon chemical concentration.
  • the concentration of the CiOi-H donor is rate-limited by the oxygen chemical concentration.
  • the concentration of the CiOi-H donor is rate-limited by the hydrogen chemical concentration. For these reasons, it is considered that the CiOi-H donor ratio shows a tendency to saturate as the carbon chemical concentration increases.
  • FIG. 7 is a diagram showing the variation N max /N min of the integral value N of the hydrogen donor concentration under each implantation condition.
  • condition No. 7 in addition to the conditions No. 1 to No. 6 described in FIG. 6, condition No. 7 is also shown.
  • the implantation conditions with smaller numbers, including condition No. 7, have at least one of the number of steps of the depth position at which hydrogen ions are implanted and the dose amount of hydrogen ions at each depth position larger than the implantation conditions with larger numbers.
  • the maximum value of the integral value N of the hydrogen donor concentration under each implantation condition is N max and the minimum value is N min .
  • FIG. 7 The higher the carbon chemical concentration of the semiconductor substrate 10, the more hydrogen donors tend to be formed.
  • the integral value N of the sample with the minimum carbon chemical concentration of the semiconductor substrate 10 is the minimum value N min
  • the integral value N of the sample with the maximum carbon chemical concentration of the semiconductor substrate 10 is the maximum value N max .
  • FIG. 8 is a diagram showing the relationship between the CiOi-H donor ratio and the variation N max /N min of the integral value N of the hydrogen donor concentration.
  • Fig. 8 shows the relationship when the carbon chemical concentration of the semiconductor substrate 10 is 0.26 x 10 15 /cm 3 .
  • Fig. 9 is a diagram showing the relationship between the CiOi-H donor ratio and the variation N max /N min of the integral value N of the hydrogen donor concentration.
  • Fig. 9 shows the relationship when the carbon chemical concentration of the semiconductor substrate 10 is 2.6 x 10 15 /cm 3.
  • the types of marks in each plot in Fig. 8 and Fig. 9 indicate the hydrogen ion implantation conditions, as in the example of Fig. 7.
  • the value of the variation N max /N min under each implantation condition uses the value shown in Fig. 7.
  • the variation N max /N min can be reduced to 1.7 when the CiOi-H donor ratio is about 42%. Similarly, the variation N max /N min can be reduced to 1.5 when the CiOi-H donor ratio is about 37%. Similarly, the variation N max /N min can be reduced to 1.3 when the CiOi-H donor ratio is about 30%.
  • the CiOi-H donor ratio when the carbon chemical concentration of the semiconductor substrate 10 is 2.6 x 1015 / cm3 , if the CiOi-H donor ratio is about 65%, the variation Nmax / Nmin can be set to 1.7. Similarly, if the CiOi-H donor ratio is about 59%, the variation Nmax / Nmin can be set to 1.5. Similarly, if the CiOi-H donor ratio is about 50%, the variation Nmax / Nmin can be set to 1.3. In both the examples of Fig. 8 and Fig. 9, it can be seen that the increase in the variation Nmax / Nmin can be particularly suppressed by setting the CiOi-H donor ratio so that the variation Nmax / Nmin is smaller than 1.3.
  • Fig. 10 is a diagram in which the CiOi-H donor ratio at each carbon chemical concentration is plotted with hexagonal marks when the variation N max /N min is set to 1.3.
  • the CiOi-H donor ratio that makes the variation N max /N min 1.3 is 30%.
  • the CiOi-H donor ratio that makes the variation N max /N min 1.3 is 50%.
  • a boundary line 313 is introduced where the CiOi-H donor ratio is slightly higher than that of the curve 311 in the entire region where the carbon chemical concentration of the semiconductor substrate 10 is 5 ⁇ 10 15 /cm 3 or less.
  • the carbon chemical concentration of the semiconductor substrate 10 of the semiconductor device 100 may be 5 ⁇ 10 15 /cm 3 or less.
  • the carbon chemical concentration of the semiconductor substrate 10 of the semiconductor device 100 may be 4 ⁇ 10 15 /cm 3 or less, or may be 3 ⁇ 10 15 /cm 3 or less.
  • the carbon chemical concentration of the semiconductor substrate 10 of the semiconductor device 100 may be 0.1 ⁇ 10 15 /cm 3 or more, or may be 0.2 ⁇ 10 15 /cm 3 or more.
  • the CiOi-H donor ratio at boundary line 313 was set constant in regions where the carbon chemical concentration was greater than 1.5 ⁇ 10 15 /cm 3.
  • the condition for the CiOi-H donor ratio N COH /N to be lower than the boundary line 313 is shown in (Conditional Formula 1).
  • N C is the carbon chemical concentration of the semiconductor substrate 10
  • N COH is the integrated concentration of the residual distribution 212 described in Fig. 5 (corresponding to the integrated concentration of the CiOi-H donor)
  • N N 1 + N COH
  • N 1 is the integrated concentration of the Si-H donor at the first doping concentration peak 201-1 described in Fig. 5.
  • an average value of the carbon chemical concentration in the entire semiconductor substrate 10 may be used.
  • Boundary line 313 shows conditions for making the variation N max /N min 1.3 or less
  • boundary line 315 shows conditions for making the variation N max /N min 1.5 or less
  • boundary line 317 shows conditions for making the variation N max /N min 1.7 or less.
  • the variation N max /N min can be suppressed to 1.5 or less by making the CiOi-H donor ratio N COH /N lower than the boundary line 315.
  • the condition for the CiOi-H donor ratio to be lower than the boundary line 315 is shown by (Conditional Expression 2).
  • (Conditional formula 2) When N C ⁇ 1.5 ⁇ 10 15 /cm 3 , N COH /N ⁇ 0.173 ⁇ N C ⁇ 10 -15 +0.33 When N C >1.5 ⁇ 10 15 /cm 3 , N COH /N ⁇ 0.59
  • the variation N max /N min can be suppressed to 1.7 or less by making the CiOi-H donor ratio N COH /N lower than the boundary line 317.
  • the condition for the CiOi-H donor ratio to be lower than the boundary line 317 is shown by (Conditional formula 3). (Conditional formula 3) When N C ⁇ 1.5 ⁇ 10 15 /cm 3 , N COH /N ⁇ 0.2 ⁇ N C ⁇ 10 -15 +0.35 When N C >1.5 ⁇ 10 15 /cm 3 , N COH /N ⁇ 0.65
  • the semiconductor device 100 may satisfy conditional formula 3, may satisfy conditional formula 2, or may satisfy conditional formula 1.
  • Implantation conditions 1 to 7 are condition No. 1 to No. 7 shown in FIG. 7. If the CiOi-H donor ratio can be made 50% or less, the variation N max /N min can be reliably made 1.7 or less. In other words, if the relationship between the CiOi-H donor ratio and the carbon chemical concentration is lower than the curve of implantation condition 4, the variation N max /N min can be made sufficiently small.
  • the condition under which the CiOi-H donor ratio is lower than the curve of condition 4 is shown in (conditional formula 4). Note that ln is the natural logarithm with the base e. (Conditional formula 4) N COH /N ⁇ 8.286 ⁇ 10 ⁇ 2 ⁇ ln(N C )+0.4656
  • the variation N max /N min can be made sufficiently small if the relationship between the CiOi-H donor ratio and the carbon chemical concentration is lower than that of the curve of implantation condition 2.
  • the condition for the CiOi-H donor ratio to be lower than that of the curve of condition 2 is shown in (Conditional formula 5).
  • (Conditional Expression 5) N COH /N ⁇ 7.185 ⁇ 10 ⁇ 2 ⁇ ln(N C )+0.4260
  • the semiconductor device 100 may satisfy conditional expression 4.
  • the semiconductor device 100 may satisfy conditional expression 5.
  • the substrate concentration index Ic is defined by the following equation, where the oxygen chemical concentration of the semiconductor substrate 10 is N OX [/cm 3 ] and the carbon chemical concentration of the semiconductor substrate 10 is N C [/cm 3 ].
  • I C (N OX ⁇ [ ⁇ N C / (1E15) ⁇ ⁇ exp (N OX / (1E17))])
  • the unit of the substrate concentration index Ic defined by the above formula is [cm -3 ].
  • the oxygen chemical concentration N OX of the semiconductor substrate 10 may be the oxygen chemical concentration in the drift region 18.
  • the carbon chemical concentration N C of the semiconductor substrate 10 may be the carbon chemical concentration in the drift region 18.
  • the substrate concentration index Ic may be defined by another formula as long as it relates to at least one of the oxygen chemical concentration or the carbon chemical concentration.
  • the substrate concentration index Ic is an index that takes into account the influence of the oxygen chemical concentration N OX and the carbon chemical concentration N C on the generation of CiOi-H donors.
  • the oxygen chemical concentration N OX contributes to the concentration of the CiOi-H donor generated in the hydrogen ion passing region. Furthermore, in order to take into account the influence of the carbon chemical concentration N C , the oxygen chemical concentration N OX is multiplied by a correction factor.
  • the correction factor means the influence of the carbon chemical concentration N C on the generation of the CiOi-H donor. Furthermore, the correction factor assumes a model in which the influence of the carbon chemical concentration N C is influenced by the oxygen chemical concentration N OX .
  • the normalized carbon chemical concentration obtained by normalizing the carbon chemical concentration N C by a predetermined carbon chemical concentration (here, 1 ⁇ 10 15 /cm 3 ) is multiplied by a value determined by the exponential function of the normalized oxygen chemical concentration obtained by normalizing the oxygen chemical concentration N OX by a predetermined oxygen chemical concentration (here, 1 ⁇ 10 17 /cm 3 ).
  • This model allows analysis to be performed taking into account the influence of the correlation between the oxygen chemical concentration and the carbon chemical concentration on the CiOi-H donor ratio.
  • the conditional formula may use the influence of the carbon chemical concentration N C or the influence of the substrate concentration index Ic.
  • the variation N max /N min can be made sufficiently small if the relationship between the CiOi-H donor ratio and the carbon chemical concentration is lower than that of the curve of implantation condition 2.
  • the condition for the CiOi-H donor ratio to be lower than that of the curve of condition 2 is shown in (Conditional formula 7).
  • (Conditional Expression 7) N COH /N ⁇ 6.120 ⁇ 10 ⁇ 2 ⁇ ln(I C ) ⁇ 2.194
  • the semiconductor device 100 may satisfy conditional expression 6 and may satisfy conditional expression 7.
  • the CiOi-H donor ratio N COH /N of the semiconductor device 100 can be adjusted by the hydrogen ion implantation conditions, as described in Figures 5 to 7. For example, as shown in Figure 5, by reducing the distance (Z1-Z2) between the first doping concentration peak 201-1 and the second doping concentration peak 201-2, the width of the inter-peak region 202 in the Z-axis direction is reduced, and the CiOi-H donor ratio is reduced. In addition, by deepening the depth position Z1 of the first doping concentration peak 201-1, the first doping concentration peak 201-1 becomes gentler, the doping concentration of the inter-peak region 202 is increased, and the CiOi-H donor ratio is increased.
  • the concentration of Si-H donors can be increased and the CiOi-H donor ratio can be reduced by increasing the doping concentration (/cm 3 ) at the apex of first doping concentration peak 201-1 or the dose amount (/cm 2 ) of hydrogen ions for forming first doping concentration peak 201-1.
  • the degree of hydrogen diffusion inside semiconductor substrate 10 can be adjusted and the CiOi-H donor ratio can be adjusted by adjusting the annealing conditions after implanting hydrogen ions. For example, by increasing the annealing temperature or lengthening the annealing time, the amount of hydrogen diffusing into inter-peak region 202 can be increased, and the doping concentration in inter-peak region 202 can be increased and the CiOi-H donor ratio can be adjusted.
  • the buffer region 20 of this example is formed by implanting hydrogen ions under condition No. 3. Also, an example of a carbon chemical concentration of the semiconductor substrate 10 of 2.6 ⁇ 10 15 /cm 3 is shown by distribution 310 (dotted line), and an example of a carbon chemical concentration of 0.26 ⁇ 10 15 /cm 3 is shown by distribution 320 (solid line).
  • the hydrogen ion implantation conditions in the examples of distribution 310 and distribution 320 are the same.
  • the buffer region 20 of this example is formed by implanting hydrogen ions under condition No. 5.
  • An example of the carbon chemical concentration of the semiconductor substrate 10 is shown by distribution 510 (dotted line) as 2.6 ⁇ 10 15 /cm 3
  • an example of the carbon chemical concentration of the semiconductor substrate 10 is shown by distribution 520 (solid line) as 0.26 ⁇ 10 15 /cm 3.
  • the hydrogen ion implantation conditions in the examples of distribution 510 and distribution 520 are the same.
  • the distance (Z1-Z2) in the Z-axis direction between the first doping concentration peak 201-1 and the second doping concentration peak 201-2 is smaller than that in the example shown in Fig. 15. Therefore, the CiOi-H donor ratio is relatively small. Therefore, the variation Nmax / Nmin can be reduced.
  • the semiconductor device 100 under condition No. 2 has a variation Nmax / Nmin of 1.3 or less, regardless of the carbon chemical concentration of the semiconductor substrate 10.
  • the distance (Z1-Z2) in the Z-axis direction between the first doping concentration peak 201-1 and the second doping concentration peak 201-2 is relatively large. Therefore, the CiOi-H donor ratio is relatively large. Therefore, it is difficult to reduce the variation Nmax / Nmin .
  • the semiconductor device 100 under condition No. 5 has a variation Nmax / Nmin greater than 1.7.
  • the depth direction distance (Z1-Z2) between the first doping concentration peak 201-1 and the second doping concentration peak 201-2 may be 5% or more and 20% or less of the depth direction distance from the lower surface 23 of the first doping concentration peak 201-1.
  • the distance (Z1-Z2) may be 15% or less of the depth direction distance from the lower surface 23 of the first doping concentration peak 201-1, or may be 10% or less.
  • the distance (Z1-Z2) may be 1 ⁇ m or more and 20 ⁇ m or less.
  • the distance (Z1-Z2) may be 10 ⁇ m or less, 8 ⁇ m or less, or 6 ⁇ m or less.
  • the distance (Z1-Z2) may be 10 ⁇ m or more.
  • the depth direction distance from the lower surface 23 of the first doping concentration peak 201-1 may be 30% or more and 50% or less of the thickness of the semiconductor substrate 10 in the depth direction. The distance may be 35% or more of the thickness. The distance may be 45% or less of the thickness.
  • the depth direction distance from the lower surface 23 of the first doping concentration peak 201-1 may be 30 ⁇ m or more and 50 ⁇ m or less. The distance may be 35 ⁇ m or more. The distance may be 45 ⁇ m or less.
  • the depth distance of the second doping concentration peak 201-2 from the lower surface 23 may be 20% or more, or may be 25% or more, of the depth thickness of the semiconductor substrate 10.
  • the distance may be 20 ⁇ m or more, or may be 25 ⁇ m or more.
  • the doping concentrations of first doping concentration peak 201-1 and second doping concentration peak 201-2 may each be less than or equal to 3 ⁇ 10 14 /cm 3.
  • the difference between the doping concentrations of first doping concentration peak 201-1 and second doping concentration peak 201-2 may be less than or equal to 1 ⁇ 10 14 /cm 3 .
  • the CiOi-H donor ratio in the first doping concentration peak 201-1 and the first inter-peak region 202-1 satisfies any one of the conditional expressions 1 to 3.
  • the depletion layer first reaches the first doping concentration peak 201-1, which is the farthest from the lower surface 23. Therefore, if the variation in the doping concentration in the vicinity of the first doping concentration peak 201-1 is large, it is likely to affect the characteristics of the semiconductor device 100.
  • the CiOi-H donor ratio in the first doping concentration peak 201-1 and the first inter-peak region 202-1 is adjusted to reduce the variation N max /N min in the region. Therefore, the effect on the characteristics of the semiconductor device 100 can be suppressed.
  • the CiOi-H donor ratio in the other doping concentration peaks 201-k and inter-peak regions 202-k may also satisfy any one of the conditional expressions 1 to 3.
  • the distance between adjacent doping concentration peaks 201 in the depth direction is defined as the peak-to-peak distance (Zk-Z(k+1)). From the multiple doping concentration peaks 201, two doping concentration peaks 201 with the maximum peak-to-peak distance are extracted. In the example of FIG. 14, the distance (Z4-Z5) between the fourth doping concentration peak 201-4 and the fifth doping concentration peak 201-5 is the maximum peak-to-peak distance.
  • the integral concentration of the Si—H donor at the doping concentration peak 201-k that is farther from the lower surface 23 is defined as N 1.
  • the integral concentration of the CiOi-H donor between the doping concentration peak 201-k and the doping concentration peak 201-(k+1) is defined as N COH .
  • any one of the conditional expressions 1 to 3 may be satisfied. According to this example, any one of the conditional expressions 1 to 3 is satisfied even in a region where the CiOi-H donor ratio is likely to be relatively high. Therefore, the variation in the concentration of the hydrogen donor can be further suppressed.
  • a minimum doping concentration peak having the smallest doping concentration may be extracted from among the multiple doping concentration peaks 201.
  • the first doping concentration peak 201-1 is the minimum doping concentration peak.
  • the doping concentration peak 201 adjacent to the minimum doping concentration peak on the lower surface 23 side is the first adjacent doping concentration peak.
  • the second doping concentration peak 201-2 is the first adjacent doping concentration peak.
  • the integral concentration of the Si-H donor at the minimum doping concentration peak is N 1
  • the integral concentration of the CiOi-H donor between the minimum doping concentration peak and the first adjacent doping concentration peak is N COH .
  • any one of the conditional expressions 1 to 3 may be satisfied. According to this example, any one of the conditional expressions 1 to 3 is satisfied even in a region where the CiOi-H donor ratio is likely to be relatively high. Therefore, the variation in the concentration of the hydrogen donor can be further suppressed.
  • each of the doping concentration peaks 201 from the first doping concentration peak 201-1, which is the farthest from the lower surface 23, to the third doping concentration peak 201 (the sixth doping concentration peak 201-6 in the example of FIG. 14), which is the second closest to the lower surface 23, is set as the target doping concentration peak.
  • the first doping concentration peak 201-1 to the sixth doping concentration peak 201-6 are the target doping concentration peaks.
  • the adjacent doping concentration peak 201 on the lower surface 23 side is set as the second adjacent doping concentration peak. In other words, if the kth doping concentration peak 201-k is set as the target doping concentration peak, the (k+1)th doping concentration peak 201-(k+1) is the second adjacent doping concentration peak.
  • the integral concentration of the Si-H donor at the target doping concentration peak is N 1
  • the integral concentration of the CiOi-H donor between the target doping concentration peak and the second adjacent doping concentration peak is N COH .
  • any one of the conditional expressions 1 to 3 may be satisfied for all the target doping concentration peaks.
  • the variation N max /N min can be reduced, for example, over the entire buffer region 20.

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JP2016096338A (ja) * 2014-11-14 2016-05-26 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体装置を形成する方法および半導体装置
JP2017098318A (ja) * 2015-11-19 2017-06-01 三菱電機株式会社 半導体装置およびその製造方法
JP2019062189A (ja) * 2017-08-18 2019-04-18 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Ｃｚ半導体ボディを含む半導体装置およびｃｚ半導体ボディを含む半導体装置を製造する方法
JP7215599B2 (ja) * 2019-12-18 2023-01-31 富士電機株式会社 半導体装置および半導体装置の製造方法

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Publication number Priority date Publication date Assignee Title
JP2016096338A (ja) * 2014-11-14 2016-05-26 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体装置を形成する方法および半導体装置
JP2017098318A (ja) * 2015-11-19 2017-06-01 三菱電機株式会社 半導体装置およびその製造方法
JP2019062189A (ja) * 2017-08-18 2019-04-18 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Ｃｚ半導体ボディを含む半導体装置およびｃｚ半導体ボディを含む半導体装置を製造する方法
JP7215599B2 (ja) * 2019-12-18 2023-01-31 富士電機株式会社 半導体装置および半導体装置の製造方法

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