WO2025016299A1 - 液源汽化系统 - Google Patents

液源汽化系统 Download PDF

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Publication number
WO2025016299A1
WO2025016299A1 PCT/CN2024/105120 CN2024105120W WO2025016299A1 WO 2025016299 A1 WO2025016299 A1 WO 2025016299A1 CN 2024105120 W CN2024105120 W CN 2024105120W WO 2025016299 A1 WO2025016299 A1 WO 2025016299A1
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Prior art keywords
pipeline
control valve
liquid
residual
liquid source
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PCT/CN2024/105120
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English (en)
French (fr)
Inventor
周厉颖
杨帅
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to KR1020257043842A priority Critical patent/KR20260020424A/ko
Publication of WO2025016299A1 publication Critical patent/WO2025016299A1/zh
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C9/00—Methods or apparatus for discharging liquefied or solidified gases from vessels not under pressure
    • F17C9/02—Methods or apparatus for discharging liquefied or solidified gases from vessels not under pressure with change of state, e.g. vaporisation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C13/00—Details of vessels or of the filling or discharging of vessels
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C13/00—Details of vessels or of the filling or discharging of vessels
    • F17C13/02—Special adaptations of indicating, measuring, or monitoring equipment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C13/00—Details of vessels or of the filling or discharging of vessels
    • F17C13/04—Arrangement or mounting of valves
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • F17D1/08—Pipe-line systems for liquids or viscous products
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • F17D1/08—Pipe-line systems for liquids or viscous products
    • F17D1/082—Pipe-line systems for liquids or viscous products for cold fluids, e.g. liquefied gas
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • F17D1/08—Pipe-line systems for liquids or viscous products
    • F17D1/12—Conveying liquids or viscous products by pressure of another fluid
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D3/00—Arrangements for supervising or controlling working operations
    • F17D3/01—Arrangements for supervising or controlling working operations for controlling, signalling, or supervising the conveyance of a product
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D3/00—Arrangements for supervising or controlling working operations
    • F17D3/18—Arrangements for supervising or controlling working operations for measuring the quantity of conveyed product
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2205/00—Vessel construction, in particular mounting arrangements, attachments or identifications means
    • F17C2205/03—Fluid connections, filters, valves, closure means or other attachments
    • F17C2205/0302—Fittings, valves, filters, or components in connection with the gas storage device
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2205/00—Vessel construction, in particular mounting arrangements, attachments or identifications means
    • F17C2205/03—Fluid connections, filters, valves, closure means or other attachments
    • F17C2205/0388—Arrangement of valves, regulators, filters
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2227/00—Transfer of fluids, i.e. method or means for transferring the fluid; Heat exchange with the fluid
    • F17C2227/01—Propulsion of the fluid
    • F17C2227/0128—Propulsion of the fluid with pumps or compressors
    • F17C2227/0135—Pumps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2227/00—Transfer of fluids, i.e. method or means for transferring the fluid; Heat exchange with the fluid
    • F17C2227/03—Heat exchange with the fluid
    • F17C2227/0302—Heat exchange with the fluid by heating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C2227/00—Transfer of fluids, i.e. method or means for transferring the fluid; Heat exchange with the fluid
    • F17C2227/03—Heat exchange with the fluid
    • F17C2227/0367—Localisation of heat exchange
    • F17C2227/0388—Localisation of heat exchange separate
    • F17C2227/039—Localisation of heat exchange separate on the pipes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of semiconductor manufacturing, and in particular, to a liquid source vaporization system.
  • the silicon wafer In the process of integrated circuit manufacturing, in order to make the silicon wafer meet certain process characteristics, such as forming different insulating layers and dielectric layers on the surface of the silicon wafer, the silicon wafer needs to be placed in a process chamber with a certain temperature, pressure, and process gas atmosphere. In some advanced process steps, some special process media need to be introduced. These process media are usually stored in liquid form. In the process, these liquid process media need to be converted into gaseous form and transferred into the process chamber.
  • the vapor pressure difference control method is also called the baking method. It uses the pressure difference between the vapor pressure of the liquid material and the process chamber pressure and the gas mass flowmeter to control the liquid to gaseous state of the process medium.
  • the vapor pressure difference control method uses the liquid in the container to be heated to the saturated vapor pressure for vaporization, the pressure after vaporization is low. Therefore, the process chamber must be in a vacuum environment to meet the transmission requirements, and the amount of gas after vaporization is relatively small, which cannot be met when the process gas demand flow is large; in addition, since the gas mass flowmeter is set on the outlet pipeline, the measured gas temperature is high.
  • the baking device container used for baking liquid media has a large volume and mass, and is generally placed at the bottom of the equipment. The distance from the baking device to the process chamber is long, and the pipelines and devices during the transmission need to be temperature managed. If a cold spot is encountered, the vaporized gas will be liquefied into liquid again.
  • Liquid phase direct control method is also called direct vaporization method, which uses liquid mass flow meter and vaporizer
  • the process medium is converted from liquid to gas by vaporization.
  • the main method is to use a vaporizer, which introduces a carrier gas into the vaporizer, atomizes the liquid process medium, and sprays it into the vaporization chamber.
  • the outside of the vaporization chamber is heated as a whole, and the atomized process medium is vaporized by the heat radiation emitted by the vaporization chamber.
  • the liquid spray that has not been completely vaporized is completely vaporized and output through the heat conduction generated by contacting the inner wall of the vaporization chamber.
  • the present application aims to solve at least one of the technical problems existing in the prior art, and proposes a liquid source vaporization system, which can solve the problem in the prior art that liquid process medium will remain in the pipeline after each use.
  • a liquid source vaporization system which is applied to semiconductor process equipment, including:
  • a vaporizing device used for vaporizing a liquid process medium into a gaseous process medium
  • a liquid source pipeline used for providing liquid process medium to the vaporization device
  • a purge pipeline for providing purge gas to the vaporization device
  • a first control unit used for selectively controlling the purge pipeline or the liquid source pipeline to be connected to the vaporization device
  • an exhaust gas treatment pipeline for conveying pollutants blown out from the vaporization device by the purge gas to an exhaust gas treatment device
  • the second control unit is used to selectively control the exhaust gas treatment pipeline or the output pipeline to be connected to the vaporization device.
  • the liquid source vaporization system has a working state and a first cleaning state
  • the first control unit controls the liquid source pipeline to be connected to the vaporization device, and the second control unit controls the output pipeline to be connected to the vaporization device;
  • the first control unit controls the purge pipeline to be connected to the vaporization device
  • the second control unit controls the exhaust gas treatment pipeline to be connected to the vaporization device.
  • the vaporization device comprises:
  • a vaporizer having a vaporization chamber for vaporizing the liquid process medium
  • a liquid inlet pipeline wherein the outlet end of the liquid inlet pipeline is connected to the vaporization chamber, and the inlet end of the liquid inlet pipeline is respectively connected to the outlet end of the liquid source pipeline and the outlet end of the purge pipeline;
  • An air outlet pipeline wherein the inlet end of the air outlet pipeline is communicated with the vaporization chamber, and the outlet end of the air outlet pipeline is respectively communicated with the inlet end of the output pipeline and the inlet end of the tail gas treatment pipeline.
  • the liquid source vaporization system has a working state and a first cleaning state
  • the first control unit controls the liquid source pipeline to be connected to the liquid inlet pipeline
  • the second control unit controls the output pipeline to be connected to the gas outlet pipeline
  • the first control unit controls the purge pipeline to be connected to the liquid inlet pipeline
  • the second control unit controls the exhaust gas treatment pipeline to be connected to the gas outlet pipeline
  • the first control unit comprises:
  • a first control valve is arranged on the liquid source pipeline and is used to control the on-off of the liquid source pipeline;
  • a second control valve is arranged on the purge pipeline and is used to control the on-off of the purge pipeline;
  • the second control unit comprises:
  • a third control valve is provided on the output pipeline for controlling the output The on-off of the outlet pipe
  • a fourth control valve is provided on the exhaust gas treatment pipeline and is used to control the on-off of the exhaust gas treatment pipeline.
  • the vaporization device further comprises:
  • a carrier gas pipeline wherein the inlet end of the carrier gas pipeline is used to communicate with a carrier gas source, and the outlet end of the carrier gas pipeline is communicated with the vaporization chamber;
  • a carrier gas control valve is arranged on the carrier gas pipeline, and the carrier gas control valve is used to control the on-off of the carrier gas pipeline.
  • the carrier gas control valve is closed.
  • the liquid source vaporization system further has a second clean state
  • the first control unit controls the purge pipeline to be connected to the liquid inlet pipeline
  • the second control unit controls the gas outlet pipeline to be connected to the exhaust gas treatment pipeline
  • the carrier gas control valve is opened.
  • a first flow meter is arranged on the liquid inlet pipeline, and the first flow meter is used to control the flow rate of the liquid process medium;
  • a first bypass pipeline wherein an inlet end of the first bypass pipeline is communicated with the liquid inlet pipeline, the inlet end of the first bypass pipeline is located between the first flow meter and the vaporizer, and an outlet end of the first bypass pipeline is communicated with the exhaust gas treatment pipeline;
  • a bypass control unit is used to selectively control the first flow meter to be in communication with the vaporization chamber or the first flow meter to be in communication with the first bypass line.
  • the liquid source vaporization system has a working state and a third cleaning state
  • the first control unit controls the liquid source pipeline to be connected to the liquid inlet pipeline
  • the bypass control unit controls the first flow meter to be connected to the vaporization chamber
  • the second The control unit controls the output pipeline to be connected with the air outlet pipeline
  • the first control unit controls the purge pipeline to communicate with the liquid inlet pipeline
  • the bypass control unit controls the first flow meter to communicate with the first bypass pipeline
  • the bypass control unit includes a first bypass valve and a second bypass valve, the first bypass valve is arranged on the first bypass line, and is used to control the on-off of the first bypass line; the second bypass valve is arranged on the liquid inlet line and is located between the inlet end of the first bypass line and the vaporizer, and is used to control the on-off of the liquid inlet line.
  • the liquid source vaporization system further comprises:
  • a first flow meter is arranged on the liquid inlet pipeline, and the first flow meter is used to control the flow rate of the liquid process medium;
  • a second bypass pipeline wherein an inlet end of the second bypass pipeline is connected to a purge gas source, an outlet end of the second bypass pipeline is connected to the liquid inlet pipeline, and the outlet end of the second bypass pipeline is located between the first flow meter and the vaporization chamber;
  • a fifth control valve is provided on the second bypass pipeline and is used for controlling the on-off of the second bypass pipeline.
  • the carrier gas control valve in the working state, is opened and the fifth control valve is closed;
  • the liquid source vaporization system also has a fourth cleaning state
  • the first control unit controls the liquid source pipeline and the purge pipeline to be disconnected from the liquid inlet pipeline, the carrier gas control valve and the fifth control valve are opened, and the second control unit controls the exhaust gas treatment pipeline to be connected to the gas outlet pipeline.
  • the liquid source vaporization system further comprises:
  • a residual liquid collector wherein the residual liquid collector is used to recover residual liquid process medium
  • a residual liquid recovery pipeline wherein the outlet end of the residual liquid recovery pipeline is connected to the residual liquid collector, and the inlet end of the residual liquid recovery pipeline is connected to the liquid inlet pipeline;
  • the sixth control valve being arranged on the residual liquid recovery pipeline and being used for controlling the on-off of the residual liquid recovery pipeline;
  • the vaporization device also includes:
  • the seventh control valve is arranged on the liquid inlet pipeline.
  • the seventh control valve is located between the inlet end of the residual liquid recovery pipeline and the vaporizer, and is used to control the connection between the vaporizer and the liquid inlet pipeline.
  • the liquid source vaporization system further comprises:
  • An exhaust pipeline wherein the residual liquid collector has an exhaust port, and the exhaust port is connected to the exhaust gas treatment pipeline through the exhaust pipeline;
  • An eighth control valve is disposed on the exhaust pipeline and is used for controlling the on-off of the exhaust pipeline.
  • the seventh control valve in the working state, the seventh control valve is opened and the sixth control valve is closed;
  • the liquid source vaporization system also has a first residual liquid recovery state.
  • the first control unit controls the purge pipeline to be connected to the liquid inlet pipeline, the seventh control valve is closed, and the sixth control valve and the eighth control valve are opened.
  • the liquid source vaporization system further comprises:
  • the ninth control valve being arranged on the residual liquid recovery pipeline, the ninth control valve being located between the sixth control valve and an outlet end of the residual liquid recovery pipeline;
  • a tenth control valve is provided on the purge branch and is used for controlling the on-off of the purge branch.
  • the sixth control valve and the tenth control valve Close, and the seventh control valve is opened;
  • the liquid source vaporization system also has a second residual liquid recovery state.
  • the first control unit controls the liquid source pipeline and the purge pipeline to be disconnected from the liquid inlet pipeline, the sixth control valve is closed, and the tenth control valve, the ninth control valve, and the eighth control valve are opened.
  • the liquid source vaporization system further comprises:
  • a residual gas discharge pipeline the inlet end of which is communicated with the residual liquid recovery pipeline, the inlet end of which is located between the sixth control valve and the ninth control valve, and the outlet end of which is communicated with the tail gas treatment pipeline;
  • a residual gas control valve is arranged on the residual gas discharge pipeline and is used to control the on-off of the residual gas discharge pipeline.
  • the liquid source vaporization system further has a pipeline residual gas discharge state
  • the first control unit controls the purge pipeline to be connected to the liquid inlet pipeline, the tenth control valve, the ninth control valve, and the seventh control valve are closed; the sixth control valve and the residual gas control valve are opened.
  • the vaporization device further comprises:
  • a carrier gas pipeline wherein an inlet end of the carrier gas pipeline is used to communicate with a carrier gas source, and an outlet end of the carrier gas pipeline is communicated with the vaporization chamber;
  • a carrier gas control valve is arranged on the carrier gas pipeline, and the carrier gas control valve is used to control the on-off of the carrier gas pipeline;
  • a first flow meter the first flow meter is arranged on the liquid inlet pipeline, and the first flow meter is used to calculate the flow rate of the liquid process medium;
  • a second bypass pipeline wherein an inlet end of the second bypass pipeline is connected to the purge gas source, an outlet end of the second bypass pipeline is connected to the liquid inlet pipeline, and the outlet end of the second bypass pipeline is located between the first flow meter and the vaporization chamber;
  • a fifth control valve is provided on the second bypass pipeline and is used for controlling the on-off of the second bypass pipeline.
  • the carrier gas control valve in the working state, is opened and the fifth control valve is closed;
  • the seventh control valve is opened, and the carrier gas control valve, the fifth control valve, the sixth control valve and the tenth control valve are closed; or
  • the liquid source vaporization system also has a second clean state
  • the first control unit controls the purge pipeline to be connected to the liquid inlet pipeline, the fifth control valve, the sixth control valve and the tenth control valve are closed, and the seventh control valve is opened;
  • the liquid source vaporization system also has a fourth cleaning state
  • the first control unit controls the liquid source pipeline and the purge pipeline to be disconnected from the liquid inlet pipeline, the tenth control valve and the sixth control valve are closed, the carrier gas control valve and the fifth control valve are opened, and the second control unit controls the exhaust gas treatment pipeline to be connected to the gas outlet pipeline;
  • the liquid source vaporization system also has a first residual liquid recovery state
  • the liquid source vaporization system also has a pipeline residual gas discharge state
  • the first control unit controls the purge pipeline to be connected to the liquid inlet pipeline, the fifth control valve, the tenth control valve, the ninth control valve, and the seventh control valve are closed; the sixth control valve and the residual gas control valve are opened.
  • the liquid source vaporization system of the present application is provided with a purge pipeline, a first control unit, an exhaust gas treatment pipeline and a second control unit. It can not only vaporize the liquid process medium through the vaporization device, but also control the purge pipeline and the exhaust gas treatment pipeline to be connected to the vaporization device through the first control unit and the second control unit, respectively, and pass the purge gas into the vaporization device, clean the inside of the vaporization device through the purge gas, and blow out the process medium residue in the corresponding pipeline through which the purge gas flows, thereby reducing the process medium residue in the pipeline and avoiding the impact on the next use.
  • the exhaust gas treatment pipeline since the exhaust gas treatment pipeline is provided, the pollutants blown out of the vaporization device by the purge gas can be transported to the exhaust gas treatment device through the exhaust gas treatment pipeline for treatment, thereby avoiding the pollution of the environment by the pollutants.
  • FIG1 is a schematic structural diagram of a liquid source vaporization system according to Embodiment 1 of the present application.
  • FIG2 is a schematic diagram of the working state of the liquid source vaporization system of Example 1 of the present application.
  • FIG3 is a schematic diagram of a first cleaning state of the liquid source vaporization system of Example 1 of the present application.
  • FIG4 is a schematic diagram of a second cleaning state of the liquid source vaporization system of Example 1 of the present application.
  • FIG5 is a schematic diagram of a third cleaning state of the liquid source vaporization system of Example 2 of the present application.
  • FIG6 is a schematic diagram of a fourth cleaning state of the liquid source vaporization system of Example 3 of the present application.
  • FIG7 is a schematic diagram of a first residual liquid recovery state of a liquid source vaporization system according to Embodiment 4 of the present application.
  • FIG8 is a schematic diagram of a second residual liquid recovery state of the liquid source vaporization system of Example 5 of the present application.
  • FIG9 is a schematic diagram of a pipeline residual gas discharge state of a liquid source vaporization system according to Embodiment 6 of the present application.
  • FIG10 is a schematic diagram of the working state of the liquid source vaporization system of Example 7 of the present application.
  • FIG11 is a schematic diagram of a first cleaning state of a liquid source vaporization system according to Embodiment 7 of the present application.
  • FIG12 is a schematic diagram of a second cleaning state of the liquid source vaporization system of Embodiment 7 of the present application.
  • FIG13 is a schematic diagram of a third cleaning state of the liquid source vaporization system of Embodiment 7 of the present application.
  • FIG14 is a schematic diagram of a first residual liquid recovery state of a liquid source vaporization system of Example 7 of the present application.
  • FIG15 is a schematic diagram of a second residual liquid recovery state of the liquid source vaporization system of Example 7 of the present application.
  • FIG16 is a schematic diagram of the residual gas discharge state of the pipeline of the liquid source vaporization system of Example 7 of the present application.
  • FIG. 17 is a schematic diagram of the pipeline residual gas discharge state of the liquid source vaporization system of Example 8 of the present application.
  • residual liquid recovery device 131. residual liquid collector; 132. residual liquid recovery line; 133. sixth control valve; 134. exhaust line; 135. eighth control valve; 136. ninth control valve; 137. residual gas exhaust line; 138. residual gas control valve; 140. purge branch; 150. tenth control valve.
  • the first embodiment discloses a liquid source vaporization system, which is applied to semiconductor process equipment.
  • the liquid source vaporization system includes: a liquid source pipeline 10 , a vaporization device 20 , an output pipeline 30 , a purge pipeline 40 , a first control unit 50 , an exhaust gas treatment unit 60 and a second control unit 70 .
  • the liquid source pipeline 10, the vaporizer 20 and the output pipeline 30 are connected in sequence. That is, the inlet end of the liquid source pipeline 10 is connected to the liquid source, and the outlet end of the liquid source pipeline 10 is connected to the vaporizer 20, so that the liquid source pipeline 10 can provide the liquid process medium to the vaporizer 20.
  • the vaporizer 20 vaporizes the liquid process medium into a gaseous process medium, and then the output pipeline 30 transports the vaporized gaseous process medium to the process chamber of the semiconductor process equipment. Thereby, the corresponding semiconductor process is carried out.
  • the inlet end of the purge pipeline 40 is connected to the purge gas source, and the outlet end of the purge pipeline 40 is connected to the vaporizer 20.
  • the purge pipeline 40 is used to provide the purge gas to the vaporizer 20;
  • the first control unit 50 is used to selectively control the purge pipeline 40 to be connected to the vaporizer 20 or the liquid source pipeline 10 to be connected to the vaporizer 20. It is easy to understand that when the purge pipeline 40 is connected to the vaporizer 20, the purge gas provided by the purge gas source can be delivered to the vaporizer 20 through the purge pipeline 40; when the liquid source pipeline 10 is connected to the vaporizer 20, the liquid process medium provided by the liquid source can be delivered to the vaporizer 20 through the liquid source pipeline 10.
  • the first control unit 50 is used to switch between providing the purge gas to the vaporizer 20 and providing the liquid process medium to the vaporizer 20.
  • the tail gas treatment unit 60 includes a tail gas treatment pipeline 62, the inlet end of the tail gas treatment pipeline 62 is connected to the vaporization device 20, and the outlet end of the tail gas treatment pipeline 62 is used to communicate with the tail gas treatment device 61.
  • the tail gas treatment pipeline 62 is used to transport the pollutants blown out from the vaporization device 20 by the purge gas to the tail gas treatment device 61, so that the pollutants are treated by the tail gas treatment device 61; the second control unit 70 is used to selectively control the tail gas treatment pipeline 62 to be connected to the vaporization device 20 or the output pipeline 30 to be connected to the vaporization device 20.
  • the second control unit 70 is used to switch between delivering pollutants to the tail gas treatment device 61 and delivering gaseous process medium to the process chamber.
  • the liquid source vaporization system provided in the embodiment of the present application can not only vaporize the liquid process medium through the vaporization device 20 by setting the purge pipeline 40, the first control unit 50, the tail gas treatment pipeline 62 and the second control unit 70, but also can control the purge pipeline 40 and the tail gas treatment pipeline 62 to be connected to the vaporization device 20 by controlling the first control unit 50 and the second control unit 70, respectively, so as to pass the purge gas into the vaporization device 20, clean the inside of the vaporization device 20 by the purge gas, and blow the gas to the vaporization device 20.
  • the residual process medium in the corresponding pipeline through which the purge gas flows is blown out, reducing the residual process medium in the pipeline to avoid affecting the next use.
  • the pollutants blown out of the vaporization device 20 by the purge gas can be transported to the tail gas treatment device 61 through the tail gas treatment pipeline 62 for treatment, thereby avoiding the pollution of the environment by the pollutants.
  • the liquid source vaporization system has a working state and a first cleaning state.
  • the liquid source vaporization system switches between the working state and the first cleaning state through the first control unit 50 and the second control unit 70 .
  • the first control unit 50 controls the liquid source pipeline 10 to be connected to the vaporizer 20, and the second control unit 70 controls the output pipeline 30 to be connected to the vaporizer 20.
  • the liquid process medium enters the vaporizer 20 through the liquid source pipeline 10, and the vaporizer 20 vaporizes the liquid process medium, and then transports the vaporized gaseous process medium to the process chamber of the semiconductor process equipment through the output pipeline 30, so as to perform the corresponding semiconductor process.
  • the first control unit 50 controls the purge pipeline 40 to be connected to the vaporizer 20, and the second control unit 70 controls the exhaust gas treatment pipeline 62 to be connected to the vaporizer 20.
  • the purge gas passes through the purge pipeline 40, the vaporizer 20, the exhaust gas treatment pipeline 62 and the exhaust gas treatment device 61 in sequence, and the purge gas cleans the air, moisture, particles, etc. in the pipelines through which it flows.
  • the pollutants blown out from the vaporizer 20 by the purge gas can be transported to the exhaust gas treatment device 61 through the exhaust gas treatment pipeline 62 for treatment, so as to avoid the pollutants from polluting the environment.
  • the first cleaning state can also be cleaned before the liquid source vaporization system vaporizes the process medium, and the air, moisture, particles, etc. in the pipeline or the vaporization device 20 are blown away to prepare for the process.
  • the vaporization device 20 includes a vaporizer 21, a liquid inlet pipeline 22, a gas outlet pipeline 23, a carrier gas pipeline 24 and a carrier gas control valve 25.
  • the vaporizer 21 has a vaporization chamber for vaporizing the liquid process medium; the outlet end of the liquid inlet pipeline 22 is connected to the vaporization chamber, and the inlet end of the liquid inlet pipeline 22 is connected to the vaporization chamber.
  • the ends of the carrier gas pipeline 24 are respectively connected to the outlet ends of the liquid source pipeline 10 and the outlet ends of the purge pipeline 40; the inlet end of the gas outlet pipeline 23 is connected to the vaporization chamber, and the outlet ends of the gas outlet pipeline 23 are respectively connected to the inlet ends of the output pipeline 30 and the inlet ends of the tail gas treatment pipeline 62.
  • the inlet end of the carrier gas pipeline 24 is used to communicate with the carrier gas source, and the outlet end of the carrier gas pipeline 24 is connected to the vaporization chamber; the carrier gas control valve 25 is arranged on the carrier gas pipeline 24, and the carrier gas control valve 25 is used to control the on and off of the carrier gas pipeline 24.
  • the exhaust gas treatment unit 60 also includes a vacuum pump.
  • the inlet end of the exhaust gas treatment pipeline 62 is connected to the outlet end of the exhaust pipeline 23 , and the outlet end of the exhaust gas treatment pipeline 62 is connected to the exhaust gas treatment device 61 .
  • the vacuum pump is arranged on the exhaust gas treatment pipeline 62 .
  • the first control unit 50 includes a first control valve 51 and a second control valve 52 .
  • the first control valve 51 is arranged on the liquid source pipeline 10 for controlling the on-off of the liquid source pipeline 10 ;
  • the second control valve 52 is arranged on the purge pipeline 40 for controlling the on-off of the purge pipeline 40 .
  • the second control unit 70 includes a third control valve 71 and a fourth control valve 72.
  • the third control valve 71 is arranged on the output pipeline 30 to control the on-off of the output pipeline 30; the fourth control valve 72 is arranged on the exhaust gas treatment pipeline 62 to control the on-off of the exhaust gas treatment pipeline 62.
  • the vacuum pump is located between the fourth control valve 72 and the exhaust gas treatment device 61 to provide power for the gas in the exhaust gas treatment pipeline 62 to flow to the exhaust gas treatment device 61.
  • the liquid source vaporization system has a working state, a first cleaning state and a second cleaning state.
  • the first control valve 51 is opened, the second control valve 52 is closed, the third control valve 71 is opened, the fourth control valve 72 is closed, and the carrier gas control valve 25 is opened.
  • the liquid source pipeline 10, the liquid inlet pipeline 22, the vaporizer 21, the gas outlet pipeline 23, and the output pipeline 30 are connected in sequence.
  • the liquid process medium enters the vaporizer 21 through the liquid source pipeline 10 and the liquid inlet pipeline 22 in sequence, and the vaporizer 21 vaporizes the liquid process medium.
  • the vaporized gaseous process medium then enters the process chamber of the semiconductor process equipment through the gas outlet pipeline 23 and the output pipeline 30 in sequence, so as to perform the corresponding semiconductor process.
  • the second control valve 52 is open, the first control valve 51 is closed, the fourth control valve 72 is open, the third control valve 71 is closed, and the carrier gas control valve 25 is closed.
  • the liquid body passes through the purge pipeline 40, the liquid inlet pipeline 22, the vaporizer 21, the gas outlet pipeline 23 and the exhaust gas treatment pipeline 62 in sequence, so as to clean the residual liquid, air, moisture, particles, etc. in the pipeline and the vaporizer 21.
  • the pollutants blown out by the purge gas from the vaporization device 20 enter the exhaust gas treatment device 61 through the exhaust gas treatment pipeline 62, so that the pollutants are treated by the exhaust gas treatment device 61 to avoid polluting the environment with the pollutants.
  • the second control valve 52 is opened, the first control valve 51 is closed, the fourth control valve 72 is opened, the third control valve 71 is closed, and the carrier gas control valve 25 is opened.
  • the second cleaning state is mainly to discharge the residual liquid and gas in the pipeline and the vaporizer 21 after the process is completed.
  • the purge gas passes through the purge pipeline 40, the liquid inlet pipeline 22, the vaporizer 21, the gas outlet pipeline 23 and the tail gas treatment pipeline 62 in sequence.
  • the carrier gas control valve 25 is opened, under the action of the carrier gas, the vaporizer 21 vaporizes the internal liquid into gas, and then is blown out together with the purge gas, thereby purging the residual liquid and gas in the pipeline and the vaporizer 21.
  • the pollutants blown out of the purge gas from the vaporization device 20 enter the tail gas treatment device 61 through the tail gas treatment pipeline 62, so that the pollutants are treated by the tail gas treatment device 61 to avoid the pollution of the environment by the pollutants.
  • the liquid source vaporization system further includes a first flow meter 80 , which is disposed on the liquid inlet pipeline 22 , and is used to control the flow rate of the liquid process medium.
  • the first control unit 50 includes a first control valve 51 and a second control valve 52, but this is not restrictive.
  • the first control unit 50 can also be a three-way valve, the first end of the three-way valve is connected to the liquid inlet line 22, the second end of the three-way valve is connected to the liquid source line 10, and the third end of the three-way valve is connected to the purge line 40, so that the purge line 40 can be selectively connected to the liquid inlet line 22 or the liquid source line 10 can be selectively connected to the liquid inlet line 22 through the three-way valve.
  • the second control unit 70 may also be a three-way valve, which will not be described in detail here.
  • the second embodiment of the present application also discloses a liquid source vaporization system, which is basically the same as the first embodiment, except that, in this embodiment, the liquid source vaporization system also includes: a first bypass line 90 and a bypass control unit 100, the inlet end of the first bypass line 90 is connected to the liquid inlet line 22, the inlet end of the first bypass line 90 is located between the first flow meter 80 and the vaporizer 21, and the outlet end of the first bypass line 90 is connected to the exhaust gas treatment line 62.
  • the outlet end of the first bypass line 90 is connected to the exhaust gas treatment line 62 and is located between the fourth control valve 72 and the vacuum pump; the bypass control unit 100 is used to selectively control the first flow meter 80 to be connected to the vaporization chamber or the first flow meter 80 to be connected to the first bypass line 90.
  • the bypass control unit 100 includes a first bypass valve 101 and a second bypass valve 102.
  • the first bypass valve 101 is arranged on the first bypass pipeline 90 to control the on-off of the first bypass pipeline 90;
  • the second bypass valve 102 is arranged on the liquid inlet pipeline 22 and is located between the inlet end of the first bypass pipeline 90 and the vaporizer 21 to control the on-off of the liquid inlet pipeline 22.
  • the liquid source vaporization system has a working state and a third cleaning state.
  • the first control unit 50 controls the liquid source pipeline 10 to be connected to the liquid inlet pipeline 22, the bypass control unit 100 controls the first flowmeter 80 to be connected to the vaporization chamber, and the second control unit 70 controls the output pipeline 30 to be connected to the gas outlet pipeline 23.
  • the first control valve 51 is opened, the second control valve 52 is closed; the third control valve 71 is opened, the fourth control valve 72 is closed, the second bypass valve 102 is opened, the first bypass valve 101 is closed, and the carrier gas control valve 25 is opened.
  • the liquid source pipeline 10, the first flowmeter 80, the liquid inlet pipeline 22, the vaporizer 21, the gas outlet pipeline 23, and the output pipeline 30 are connected in sequence.
  • the liquid process medium enters the vaporizer 21 through the liquid source pipeline 10, the first flowmeter 80, and the liquid inlet pipeline 22 in sequence.
  • the vaporizer 21 vaporizes the liquid process medium.
  • the vaporized gaseous process medium then enters the process chamber of the semiconductor process equipment through the gas outlet pipeline 23 and the output pipeline 30 in sequence, thereby performing the corresponding semiconductor process.
  • the first control unit 50 controls the purge pipeline 40 and the inlet The liquid pipeline 22 is connected, and the bypass control unit 100 controls the first flowmeter 80 to be connected with the first bypass pipeline 90.
  • the second control valve 52 is opened and the first control valve 51 is closed; the first bypass valve 101 is opened, the second bypass valve 102 is closed, and the carrier gas control valve 25 is closed.
  • the purge pipeline 40, the first flowmeter 80, the liquid inlet pipeline 22, the first bypass pipeline 90, the tail gas treatment pipeline 62, the vacuum pump, and the tail gas treatment device 61 are connected in sequence. Due to the commonly used liquid process medium, it may have dangerous characteristics such as self-ignition, corrosiveness, and toxicity.
  • the purge gas passes through the purge pipeline 40, the first flow meter 80, the liquid inlet pipeline 22, the first bypass pipeline 90, the exhaust gas treatment pipeline 62, the vacuum pump and the exhaust gas treatment device 61 in sequence, and blows the pollutants and residual liquid therein to the exhaust gas treatment device 61, thereby ensuring the safety of the operator during the maintenance and replacement of the first flow meter 80.
  • the bypass control unit 100 includes a first bypass valve 101 and a second bypass valve 102, but this is not restrictive.
  • the first control unit 50 can also be a three-way valve, the first end of the three-way valve is connected to the liquid inlet pipeline 22, the second end of the three-way valve is connected to the first bypass pipeline 90, and the third end of the three-way valve is connected to the vaporizer 21, so that the liquid inlet pipeline 22 is connected to the first bypass pipeline 90 or the liquid inlet pipeline 22 is connected to the vaporizer 21 through the three-way valve.
  • the third embodiment of the present application further discloses a liquid source vaporization system, which is basically the same as the first embodiment, except that, in the present embodiment, the liquid source vaporization system further includes: a second bypass line 110 and a fifth control valve 120, the inlet end of the second bypass line 110 is connected to the purge gas source, the outlet end of the second bypass line 110 is connected to the liquid inlet line 22, and the outlet end of the second bypass line 110 is located between the first flow meter 80 and the vaporization chamber; the fifth control valve 120 is arranged on the second bypass line 110, and is used to control the on and off of the second bypass line 110.
  • the liquid source vaporization system has a working state and a fourth cleaning state.
  • the first control valve 51 is opened, the second control valve 52 is closed, the fifth control valve 120 is closed, the third control valve 71 is opened, the fourth control valve 72 is closed, and the carrier gas control valve 25 is opened.
  • the liquid source pipeline 10, the liquid inlet pipeline 22, the vaporizer 21, the gas outlet pipeline 23, and the output pipeline 30 are connected in sequence.
  • the liquid process medium enters the vaporizer 21 through the liquid source pipeline 10 and the liquid inlet pipeline 22 in sequence, and the vaporizer 21 vaporizes the liquid process medium.
  • the vaporized gaseous process medium then enters the process chamber of the semiconductor process equipment through the gas outlet pipeline 23 and the output pipeline 30 in sequence, so as to perform the corresponding semiconductor process.
  • the fifth control valve 120 is open, the first control valve 51 is closed, the second control valve 52 is closed, the carrier gas control valve 25 is open, the fourth control valve 72 is open, and the third control valve 71 is closed.
  • the fourth cleaning state is mainly used when the first flow meter 80 fails and the liquid cannot pass through.
  • the purge gas source the second bypass line 110, the liquid inlet line 22, the vaporizer 21, the gas outlet line 23, the tail gas treatment line 62, the vacuum pump and the tail gas treatment device 61 are connected in sequence.
  • the purge gas bypasses the first flow meter 80 through the second bypass line 110, and then enters the vaporizer 21 through the liquid inlet line 22 in sequence.
  • the vaporizer 21 vaporizes the residual liquid inside, and then under the action of the purge gas, the residual liquid, air, moisture, particles, etc.
  • the vaporizer 21 are purged clean, and the vaporized gas and pollutants are discharged into the tail gas treatment device 61 through the gas outlet line 23 and the tail gas treatment line 62. Finally, the pollutants are treated by the tail gas treatment device 61 to avoid polluting the environment with pollutants.
  • the second bypass pipeline 110 By providing the second bypass pipeline 110, when the first flow meter 80 fails and cannot pass liquid, the residual liquid in the pipeline at the rear end of the first flow meter 80 can be drained first, thereby ensuring overall safety.
  • the fourth embodiment of the present application as shown in FIG. 7 also discloses a liquid source vaporization system, which is basically the same as the first embodiment, except that in this embodiment, the liquid source vaporization system also includes: a residual liquid recovery device The residual liquid recovery device 130 is connected to the liquid inlet pipeline 22, and the residual liquid recovery device 130 is used to recover the residual process medium.
  • the liquid source vaporization system of the fourth embodiment of the present application is additionally provided with a residual liquid recovery device 130 on the basis of the first embodiment, which can recover the residual liquid in the pipeline, thereby reducing the loss of liquid process medium and lowering the material cost.
  • the residual liquid recovery device 130 includes: a residual liquid collector 131, a residual liquid recovery pipeline 132 and a sixth control valve 133, the residual liquid collector 131 is used to recover the residual liquid process medium; the outlet end of the residual liquid recovery pipeline 132 is connected to the residual liquid collector 131, and the inlet end of the residual liquid recovery pipeline 132 is connected to the liquid inlet pipeline 22; the sixth control valve 133 is arranged on the residual liquid recovery pipeline 132, and is used to control the on and off of the residual liquid recovery pipeline 132.
  • the vaporization device 20 also includes: a seventh control valve 26, which is arranged on the liquid inlet pipeline 22, and the seventh control valve 26 is located between the inlet end of the residual liquid recovery pipeline 132 and the vaporizer 21, and is used to control the connection between the vaporization chamber of the vaporizer 21 and the liquid inlet pipeline 22.
  • the residual liquid recovery device 130 further includes an exhaust pipeline 134 and an eighth control valve 135.
  • the residual liquid collector 131 has an exhaust port, which is connected to the exhaust gas treatment pipeline 62 through the exhaust pipeline 134.
  • the eighth control valve 135 is disposed on the exhaust pipeline 134 to control the on-off of the exhaust pipeline 134.
  • the liquid source vaporization system has a working state and a first residual liquid recovery state.
  • the first control valve 51 is open, the second control valve 52 is closed; the third control valve 71 is open, the fourth control valve 72 is closed, the seventh control valve 26 is open, the sixth control valve 133 is closed, and the carrier gas control valve 25 is open.
  • the liquid source pipeline 10, the first flowmeter 80, the liquid inlet pipeline 22, the vaporizer 21, the gas outlet pipeline 23, and the output pipeline 30 are connected in sequence.
  • the liquid process medium enters the vaporizer 21 through the liquid source pipeline 10, the first flowmeter 80, and the liquid inlet pipeline 22 in sequence, and the vaporizer 21 converts the liquid into The gaseous process medium is vaporized, and the vaporized gaseous process medium then enters the process chamber of the semiconductor process equipment through the gas outlet pipeline 23 and the output pipeline 30 in sequence, so as to perform the corresponding semiconductor process.
  • the second control valve 52 is open, the first control valve 51 is closed, the sixth control valve 133 is open, the seventh control valve 26 is closed, the eighth control valve 135 is open, and the carrier gas control valve 25 is closed.
  • the first residual liquid recovery state is mainly used when the vaporizer 21 fails and cannot perform vaporization work, so that the residual liquid in the pipeline enters the residual liquid collector 131 with the purge gas for recovery.
  • the purge gas source, the purge pipeline 40, the liquid inlet pipeline 22, the residual liquid recovery pipeline 132 and the residual liquid collector 131 are connected in sequence, and the exhaust port of the residual liquid collector 131, the exhaust pipeline 134, the exhaust gas treatment pipeline 62, and the exhaust gas treatment device 61 are connected in sequence.
  • the purge gas enters the residual liquid collector 131 through the purge pipeline 40, the liquid inlet pipeline 22, and the residual liquid recovery pipeline 132 in sequence, and then enters the exhaust gas treatment device 61 through the exhaust port of the residual liquid collector 131, the exhaust pipeline 134, and the exhaust gas treatment pipeline 62.
  • the residual liquid in the pipeline enters the residual liquid collector 131 for recovery along with the purge gas, while the gaseous process medium or other waste gas in the pipeline can enter the exhaust gas treatment device 61 together with the purge gas for treatment, thereby ensuring the collection of residual liquid while avoiding environmental pollution.
  • the liquid source vaporization system of the fourth embodiment of the present application is provided with a residual liquid collector 131, a residual liquid recovery pipeline 132 and a sixth control valve 133, and a seventh control valve 26 is provided on the liquid inlet pipeline 22 between the inlet end of the residual liquid recovery pipeline 132 and the vaporizer 21.
  • the sixth control valve 133 and the seventh control valve 26 can selectively control the liquid inlet pipeline 22 to be connected with the residual liquid recovery pipeline 132 or the liquid inlet pipeline 22 to be connected with the vaporizer 21, so that when the liquid inlet pipeline 22 is connected with the residual liquid recovery pipeline 132, the residual liquid in the pipeline can be recovered, thereby reducing the loss of liquid process medium and reducing material costs.
  • the excess gas and pressure in the container of the residual liquid collector 131 can be discharged into the tail gas treatment pipeline 62, and the gaseous process medium or other waste gas in the pipeline can be introduced into the tail gas treatment device 61 together with the purge gas for treatment, so that while facilitating the collection of residual liquid, environmental pollution can also be avoided, which is a typical one-item-for-multiple-purposes.
  • the fifth embodiment of the present application also discloses a liquid source vaporization system, which is basically the same as the fourth embodiment, except that, in this embodiment, the liquid source vaporization system also includes: a ninth control valve 136, the ninth control valve 136 is arranged on the residual liquid recovery pipeline 132, and the ninth control valve 136 is located between the sixth control valve 133 and the outlet end of the residual liquid recovery pipeline 132.
  • the liquid source vaporization system also includes: a purge branch 140 and a tenth control valve 150, the inlet end of the purge branch 140 is connected to the purge gas source, the outlet end of the purge branch 140 is connected to the residual liquid recovery pipeline 132, and the outlet end of the purge branch 140 is located between the ninth control valve 136 and the sixth control valve 133; the tenth control valve 150 is arranged on the purge branch 140, and is used to control the on and off of the purge branch 140.
  • the liquid source vaporization system has a working state and a second residual liquid recovery state.
  • the first control valve 51 is opened, the second control valve 52 is closed, and the tenth control valve 150 is closed; the third control valve 71 is opened, the fourth control valve 72 is closed, the seventh control valve 26 is opened, the sixth control valve 133 is closed, and the carrier gas control valve 25 is opened.
  • the liquid source pipeline 10, the first flowmeter 80, the liquid inlet pipeline 22, the vaporizer 21, the gas outlet pipeline 23, and the output pipeline 30 are connected in sequence.
  • the liquid process medium enters the vaporizer 21 through the liquid source pipeline 10, the first flowmeter 80, and the liquid inlet pipeline 22 in sequence, and the vaporizer 21 vaporizes the liquid process medium.
  • the vaporized gaseous process medium then enters the process chamber of the semiconductor process equipment through the gas outlet pipeline 23 and the output pipeline 30 in sequence, so as to perform the corresponding semiconductor process.
  • the tenth control valve 150 is opened, the first control valve 51 is closed, the second control valve 52 is closed, the ninth control valve 136 is opened, the sixth control valve 133 is closed, the seventh control valve 26 is closed, the eighth control valve 135 is opened, and the carrier gas control valve 25 is closed.
  • the second residual liquid recovery state is mainly used to purge the pipeline after the residual liquid is collected to discharge air, water and other impurities in the pipeline and the residual liquid collector 131.
  • the purge gas source, the purge branch 140, the residual liquid recovery pipeline 132 and the residual liquid collector 131 are connected in sequence, and the exhaust port of the residual liquid collector 131, the exhaust pipeline 134, the tail gas treatment pipeline 62 and the tail gas treatment device 61 are connected in sequence.
  • the purge gas passes through the purge branch 140, the residual liquid recovery pipeline 132 and the residual liquid collector 131 in sequence.
  • the liquid recovery pipeline 132 enters the residual liquid collector 131, and then enters the tail gas treatment device 61 through the exhaust port of the residual liquid collector 131, the exhaust pipeline 134, and the tail gas treatment pipeline 62.
  • impurities such as air and water vapor in the pipeline and the residual liquid collector 131 are discharged from the residual liquid collector 131 along with the purge gas, and enter the tail gas treatment device 61 together with the purge gas for treatment, thereby ensuring that the collected residual liquid will not react with the gas impurities and is in a relatively stable state; at the same time, it can also avoid environmental pollution caused by the discharged exhaust gas.
  • embodiment 6 of the present application also discloses a liquid source vaporization system, which is basically the same as embodiment 5, except that, in this embodiment, the residual liquid recovery device 130 also includes: a residual gas exhaust pipeline 137 and a residual gas control valve 138, the inlet end of the residual gas exhaust pipeline 137 is connected to the residual liquid recovery pipeline 132, the inlet end of the residual gas exhaust pipeline 137 is located between the sixth control valve 133 and the ninth control valve 136, the outlet end of the residual gas exhaust pipeline 137 is connected to the exhaust gas treatment pipeline 62, and the outlet end of the residual gas exhaust pipeline 137 is located between the fourth control valve 72 and the vacuum pump; the residual gas control valve 138 is arranged on the residual gas exhaust pipeline 137, and is used to control the on and off of the residual gas exhaust pipeline 137.
  • the residual liquid recovery device 130 also includes: a residual gas exhaust pipeline 137 and a residual gas control valve 138, the inlet end of the residual gas exhaust pipeline 137 is connected to the residual liquid recovery pipeline 132, the inlet end of the
  • the liquid source vaporization system has a working state and a pipeline residual gas discharge state.
  • the first control valve 51 is opened, the second control valve 52 is closed, and the tenth control valve 150 is closed; the third control valve 71 is opened, the fourth control valve 72 is closed, the seventh control valve 26 is opened, the sixth control valve 133 is closed, and the carrier gas control valve 25 is opened.
  • the liquid source pipeline 10, the first flowmeter 80, the liquid inlet pipeline 22, the vaporizer 21, the gas outlet pipeline 23, and the output pipeline 30 are connected in sequence.
  • the liquid process medium enters the vaporizer 21 through the liquid source pipeline 10, the first flowmeter 80, and the liquid inlet pipeline 22 in sequence, and the vaporizer 21 vaporizes the liquid process medium.
  • the vaporized gaseous process medium then enters the process chamber of the semiconductor process equipment through the gas outlet pipeline 23 and the output pipeline 30 in sequence, so as to perform the corresponding semiconductor process.
  • the second control valve 52 is opened, the first control valve 51 is closed, the tenth control valve 150 is closed, the sixth control valve 133 is opened, the residual gas control valve 138 is opened, the seventh control valve 26 is closed, the ninth control valve 136 is closed, and the carrier gas control valve 25 is closed.
  • the pipeline residual gas discharge state is mainly used for purging the pipeline with purge gas when the residual liquid collector 131 needs to be dismantled after the residual liquid collection is completed, so as to discharge the residual gaseous process medium and impurities such as air and moisture inside the pipeline.
  • the purge gas source When the liquid source vaporization system is in the state of residual gas discharge from the pipeline, the purge gas source, the purge pipeline 40, the liquid inlet pipeline 22, the residual liquid recovery pipeline 132, the residual gas discharge pipeline 137, the tail gas treatment pipeline 62, and the tail gas treatment device 61 are connected in sequence.
  • the purge gas enters the tail gas treatment device 61 through the purge pipeline 40, the liquid inlet pipeline 22, the residual liquid recovery pipeline 132, the residual gas discharge pipeline 137, and the tail gas treatment pipeline 62 in sequence.
  • the purge gas brings the gaseous process medium and impurities such as air and moisture in the pipeline into the tail gas treatment device 61 for treatment, thereby removing the gaseous process medium and impurities such as air and moisture in the pipeline, ensuring the safety of the removal process of the residual liquid collector 131. At the same time, it can also avoid environmental pollution caused by the discharged waste gas.
  • embodiment 7 of the present application also discloses a liquid source vaporization system, which is basically the same as embodiment 6, except that, in this embodiment, the liquid source vaporization system also includes: a second bypass line 110 and a fifth control valve 120, the inlet end of the second bypass line 110 is connected to the purge gas source, the outlet end of the second bypass line 110 is connected to the liquid inlet line 22, and the outlet end of the second bypass line 110 is located between the first flowmeter 80 and the vaporization chamber; the fifth control valve 120 is arranged on the second bypass line 110, and is used to control the on and off of the second bypass line 110.
  • the liquid source vaporization system has a working state, a first cleaning state, a second cleaning state, a fourth cleaning state, a first residual liquid recovery state, a second residual liquid recovery state, and a pipeline residual gas discharge state.
  • the first control valve 51 is opened, the second control valve 52 is closed, the fifth control valve 120 is closed, the tenth control valve 150 is closed, the seventh control valve 26 is opened, the sixth control valve 133 is closed, the carrier gas control valve 25 is opened, the third control valve 71 is opened, and the fourth control valve 72 is closed.
  • the liquid source pipeline 10, the first flow meter 80, the liquid inlet pipeline 22, the vaporizer 21, the gas outlet pipeline 23, and the output pipeline 30 are connected in sequence.
  • the liquid process medium passes through the liquid source pipeline 10,
  • the first flow meter 80 and the liquid inlet pipeline 22 enter the vaporizer 21, the vaporizer 21 vaporizes the liquid process medium, and the vaporized gaseous process medium then enters the process chamber of the semiconductor process equipment through the gas outlet pipeline 23 and the output pipeline 30 in sequence, so as to carry out the corresponding semiconductor process.
  • the second control valve 52 is open, the first control valve 51 is closed, the fifth control valve 120 is closed, the tenth control valve 150 is closed, the seventh control valve 26 is open, the sixth control valve 133 is closed, the carrier gas control valve 25 is closed, the fourth control valve 72 is open, and the third control valve 71 is closed.
  • the purge gas passes through the purge pipeline 40, the liquid inlet pipeline 22, the vaporizer 21, and the gas outlet pipeline 23 in sequence, thereby clearing the residual liquid, air, moisture, particles, etc. in the pipeline and the vaporizer 21.
  • the pollutants blown out by the purge gas from the vaporization device 20 enter the exhaust gas treatment device 61 through the exhaust gas treatment pipeline 62, so that the pollutants are treated by the exhaust gas treatment device 61 to avoid polluting the environment with the pollutants.
  • the second control valve 52 is opened, the first control valve 51 is closed, the fifth control valve 120 is closed, the tenth control valve 150 is closed, the seventh control valve 26 is opened, the sixth control valve 133 is closed, the carrier gas control valve 25 is opened, the fourth control valve 72 is opened, and the third control valve 71 is closed.
  • the second cleaning state is mainly to discharge the residual liquid and gas in the pipeline and vaporizer 21 after the process is completed.
  • the purge gas passes through the purge pipeline 40, the liquid inlet pipeline 22, the vaporizer 21, and the gas outlet pipeline 23 in sequence.
  • the carrier gas control valve 25 is opened, under the action of the carrier gas, the vaporizer 21 vaporizes the internal liquid into gas, and then blows it out together with the purge gas, thereby purging the residual liquid and gas in the pipeline and the vaporizer 21.
  • the pollutants blown out by the purge gas from the vaporizer 20 enter the exhaust gas treatment device 61 through the exhaust gas treatment pipeline 62, so that the pollutants are treated by the exhaust gas treatment device 61 to avoid polluting the environment with pollutants.
  • the fifth control valve 120 is opened, the first control valve 51 is closed, the second control valve 52 is closed, the tenth control valve 150 is closed, the seventh control valve 26 is opened, and the The sixth control valve 133 is closed, the carrier gas control valve 25 is opened, the fourth control valve 72 is opened, and the third control valve 71 is closed.
  • the fourth cleaning state is mainly used when the first flow meter 80 fails and cannot pass the liquid.
  • the purge gas source, the second bypass line 110, the liquid inlet line 22, the vaporizer 21, the gas outlet line 23, the tail gas treatment line 62, the vacuum pump and the tail gas treatment device 61 are connected in sequence.
  • the purge gas bypasses the first flow meter 80 through the second bypass line 110, and then enters the vaporizer 21 through the liquid inlet line 22 in sequence.
  • the vaporizer 21 vaporizes the residual liquid inside, and then under the action of the purge gas, the residual liquid, air, moisture, particles, etc.
  • the vaporizer 21 are purged clean, and the vaporized gas and pollutants are discharged into the tail gas treatment device 61 through the gas outlet line 23 and the tail gas treatment line 62. Finally, the pollutants are treated by the tail gas treatment device 61 to avoid polluting the environment with pollutants.
  • the second bypass pipeline 110 By providing the second bypass pipeline 110, when the first flow meter 80 fails and cannot pass liquid, the residual liquid in the pipeline at the rear end of the first flow meter 80 can be drained first, thereby ensuring overall safety.
  • the second control valve 52 is opened, the first control valve 51 is closed, the fifth control valve 120 is closed, the tenth control valve 150 is closed, the sixth control valve 133 is opened, the ninth control valve 136 is opened, the seventh control valve 26 is closed, the residual gas control valve 138 is closed, the eighth control valve 135 is opened, the carrier gas control valve 25 is closed, the third control valve 71 is closed, and the fourth control valve 72 is closed.
  • the first residual liquid recovery state is mainly used when the vaporizer 21 fails and cannot perform the vaporization work, so that the residual liquid in the pipeline enters the residual liquid collector 131 with the purge gas for recovery.
  • the purge gas source, the purge pipeline 40, the liquid inlet pipeline 22, the residual liquid recovery pipeline 132 and the residual liquid collector 131 are connected in sequence, and the exhaust port of the residual liquid collector 131, the exhaust pipeline 134, the exhaust gas treatment pipeline 62, and the exhaust gas treatment device 61 are connected in sequence.
  • the purge gas enters the residual liquid collector 131 through the purge pipeline 40, the liquid inlet pipeline 22, and the residual liquid recovery pipeline 132 in sequence, and then enters the exhaust gas treatment device 61 through the exhaust port of the residual liquid collector 131, the exhaust pipeline 134, and the exhaust gas treatment pipeline 62.
  • the residual liquid in the pipeline enters the residual liquid collector 131 with the purge gas for recovery.
  • the gaseous process medium or other waste gas in the pipeline can enter the tail gas treatment device 61 together with the purge gas for treatment, thereby ensuring the collection of residual liquid while avoiding environmental pollution.
  • the liquid source vaporization system of the seventh embodiment of the present application is provided with a residual liquid collector 131, a residual liquid recovery pipeline 132 and a sixth control valve 133, and a seventh control valve 26 is provided on the liquid inlet pipeline 22 between the inlet end of the residual liquid recovery pipeline 132 and the vaporizer 21.
  • the sixth control valve 133 and the seventh control valve 26 can selectively control the liquid inlet pipeline 22 to be connected with the residual liquid recovery pipeline 132 or the liquid inlet pipeline 22 to be connected with the vaporizer 21, so that when the liquid inlet pipeline 22 is connected with the residual liquid recovery pipeline 132, the residual liquid in the pipeline can be recovered, thereby reducing the loss of liquid process medium and reducing material costs.
  • the excess gas and pressure in the container of the residual liquid collector 131 can be discharged into the tail gas treatment pipeline 62, and the gaseous process medium or other waste gas in the pipeline can be introduced into the tail gas treatment device 61 together with the purge gas for treatment, so that while facilitating the collection of residual liquid, environmental pollution can also be avoided, which is a typical one-item-for-multiple-purposes.
  • the tenth control valve 150 is opened, the first control valve 51 is closed, the second control valve 52 is closed, and the fifth control valve 120 is closed; the ninth control valve 136 is opened, the sixth control valve 133 is closed, the seventh control valve 26 is closed, and the residual gas control valve 138 is closed; the eighth control valve 135 is opened, the carrier gas control valve 25 is closed, the third control valve 71 is closed, and the fourth control valve 72 is closed.
  • the second residual liquid recovery state is mainly used to purge the pipeline after the residual liquid collection is completed, so as to discharge the air, moisture and other impurities in the pipeline and the residual liquid collector 131.
  • the purge gas source, the purge branch 140, the residual liquid recovery pipeline 132 and the residual liquid collector 131 are connected in sequence, and the exhaust port of the residual liquid collector 131, the exhaust pipeline 134, the exhaust gas treatment pipeline 62, and the exhaust gas treatment device 61 are connected in sequence.
  • the purge gas enters the residual liquid collector 131 through the purge branch 140 and the residual liquid recovery pipeline 132 in sequence, and then enters the exhaust gas treatment device 61 through the exhaust port of the residual liquid collector 131, the exhaust pipeline 134, and the exhaust gas treatment pipeline 62.
  • impurities such as air and water vapor in the pipeline and the residual liquid collector 131 are discharged from the residual liquid collector 131 along with the purge gas.
  • the second control valve 52 is opened, the first control valve 51 is closed, the fifth control valve 120 is closed, the tenth control valve 150 is closed, the sixth control valve 133 is opened, the residual gas control valve 138 is opened, the seventh control valve 26 is closed, the ninth control valve 136 is closed, the eighth control valve 135 and the carrier gas control valve 25 are closed, the third control valve 71 is closed, and the fourth control valve 72 is closed.
  • the pipeline residual gas discharge state is mainly used to purge the pipeline with purge gas when the residual liquid collector 131 needs to be dismantled after the residual liquid collection is completed, so as to remove the residual gaseous process medium and impurities such as air and moisture inside the pipeline.
  • the purge gas source When the liquid source vaporization system is in the state of residual gas discharge from the pipeline, the purge gas source, the purge pipeline 40, the liquid inlet pipeline 22, the residual liquid recovery pipeline 132, the residual gas discharge pipeline 137, the tail gas treatment pipeline 62, and the tail gas treatment device 61 are connected in sequence.
  • the purge gas enters the tail gas treatment device 61 through the purge pipeline 40, the liquid inlet pipeline 22, the residual liquid recovery pipeline 132, the residual gas discharge pipeline 137, and the tail gas treatment pipeline 62 in sequence.
  • the purge gas brings the gaseous process medium and impurities such as air and moisture in the pipeline into the tail gas treatment device 61 for treatment, thereby removing the gaseous process medium and impurities such as air and moisture in the pipeline, ensuring the safety of the removal process of the residual liquid collector 131. At the same time, it can also avoid environmental pollution caused by the discharged waste gas.
  • the pipeline residual gas discharge state can also realize the function of the third cleaning state in Example 2. That is to say, when the first flow meter 80 needs maintenance and replacement, in order to ensure the safety of personnel, the liquid source vaporization system of this embodiment can be adjusted to the pipeline residual gas discharge state, and the pollutants and residual liquid therein can be blown to the exhaust gas treatment system for treatment, thereby ensuring the safety of the operating personnel during the maintenance and replacement of the first flow meter 80. It is a typical case of using one thing for multiple purposes.
  • the atomizer and the flow meter in the vaporizer 21 have small aperture structures, which are prone to cause blockage when the liquid source is viscous. Therefore, the vaporizer 21 and the flow meter need to be replaced and maintained.
  • the liquid source vaporization system of this embodiment also has a first flushing state, which is basically the same as the first residual liquid recovery state, except that in the first flushing state, the first control valve 51 is opened and the second control valve 52 is closed.
  • the liquid introduced into the liquid source is no longer a process medium, but an organic solvent, such as n-octane, etc., and the pipeline and the device are flushed with an organic solvent.
  • the residual liquid and the organic solvent after the pipeline flushing pass through the purge pipeline 40, the liquid inlet pipeline 22, and the residual liquid recovery pipeline 132 in turn into the residual liquid collector 131, and the waste liquid after flushing is collected, thereby completing the flushing of the pipeline.
  • the first residual liquid recovery state can be entered, and the residual liquid in the pipeline can be recovered by the purge gas to complete the cleaning of the pipeline.
  • the liquid source vaporization system of this embodiment also has a second flushing state, which is basically the same as the second cleaning state, except that in the second flushing state, the first control valve 51 is opened and the second control valve 52 is closed.
  • the liquid introduced into the liquid source is no longer a process medium, but is changed to an organic solvent, such as n-octane, etc.
  • the organic solvent passes through the purge pipeline 40, the liquid inlet pipeline 22, the vaporizer 21, and the gas outlet pipeline 23 in sequence.
  • the vaporizer 21 vaporizes the internal liquid organic solvent into gas, and dissolves the residual process medium in the vaporizer 21, and then blows it out together, thereby flushing the residual process medium in the pipeline and the vaporizer 21, and entering the tail gas treatment device 61 through the tail gas treatment pipeline 62, so that the pollutants are treated by the tail gas treatment device 61 to avoid polluting the environment.
  • the second cleaning state can be entered, and the residual liquid in the pipeline is recovered by the purge gas to complete the cleaning of the pipeline.
  • the difference between the first flushing state and the second flushing state is that the first flushing state is for flushing the pipeline before the carburetor 21 , while the second flushing state can achieve flushing inside the carburetor 21 .
  • the eighth embodiment of the present application also discloses a liquid source vaporization system, which is basically the same as the seventh embodiment, except that, in the present embodiment, the exhaust pipe 134 does not pass through the vacuum pump, but is directly connected to the exhaust gas treatment device 61.
  • This structure is mainly used to directly adjust the liquid source vaporization system to the second residual liquid recovery state after the installation is completed. During the first purge, there is no special gas or liquid in the pipeline, so it can be directly purged into the exhaust gas treatment system without passing through a vacuum pump.
  • the vaporization device 20 in order to prevent the carrier gas from causing fluctuations in the original temperature after entering the vaporizer 21, the vaporization device 20 also includes a heat exchanger, which is arranged on the carrier gas pipeline 24.
  • the heat exchanger is used to heat the carrier gas so as to increase the temperature of the carrier gas to the required temperature in a shorter time, thereby improving the vaporization effect.
  • the first flowmeter 80 is a mass flowmeter, which can accurately control the flow rate of the liquid.
  • a gas flowmeter is provided on the carrier gas pipeline 24, and the gas flowmeter is a mass flowmeter, which can accurately control the flow rate of the gas.
  • this is not restrictive. As long as it does not violate the inventive concept of this application, any device that can accurately measure the flow rate of liquid or gas is within the scope of protection of the application.
  • a pressure detection device can be set on the pipeline to confirm the overall transmission performance and safety.
  • a first pressure detection device may be provided on the liquid inlet pipeline 22, and the first pressure detection device is located between the inlet end of the residual liquid recovery pipeline 132 and the first flow meter 80, for detecting the pressure of the fluid entering the vaporizer 21 and confirming the stability of the liquid source supply pressure.
  • a third pressure detection device may also be provided on the residual gas discharge pipeline 137.
  • the third pressure detection device is located between the inlet end of the third pressure detection device and the residual gas control valve 138, so as to confirm the sealing of the pipeline.
  • a vacuum pump is used to use negative pressure to remove the gas in the pipeline.
  • the gas is extracted and discharged into the exhaust gas treatment device, but this is not restrictive, and it can also be an air pump, a fan or other device. As long as it can generate air flow and discharge the air flow into the exhaust gas treatment device, it is within the protection scope of this application.

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Abstract

一种液源汽化系统，应用于半导体工艺设备，包括：汽化装置（20）、液源管路（10）、吹扫管路（40）、第一控制单元（50）、输出管路（30）、尾气处理管路（62）和第二控制单元（70）；第一控制单元（50）用于选择性地控制吹扫管路（40）或液源管路（10）与汽化装置（20）连通；第二控制单元（70）用于选择性地控制尾气处理管路（62）或输出管路（30）与汽化装置（20）连通；该系统可以解决现有技术中每次使用后管路都会有液态工艺介质残留的问题。

Description

液源汽化系统 技术领域
本申请涉及半导体制造领域，具体地，涉及一种液源汽化系统。
背景技术
在集成电路制造过程中，为了使硅片能满足某种工艺特性，如在硅片表面形成不同的绝缘层、介质层等，需将硅片置于具有一定温度、压力、工艺气体氛围的工艺腔室中。在一些先进工艺制程中，需引入一些特殊的工艺介质，这些工艺介质通常以液态的形式储存，而在工艺中，需要将这些液态的工艺介质转化为气态的形式传输入工艺腔室中。
现有技术中，在对流体流量控制精确度和稳定性较高的输送过程中，将上述工艺介质的液态转化为气态通常有两种不同的方式，即，蒸气压差控制法和液相直接控制法。
蒸气压差控制法也称烘烤法，是利用液态材料的蒸气压和工艺腔室压力的压差及气体质量流量计进行控制的方式来实现工艺介质的液态转化为气态。然而，由于蒸气压差控制法是利用将容器中液体加热至饱和蒸气压进行汽化，汽化后压力低，因此，要求工艺腔室为真空环境时才能满足传输要求，而且汽化后气体的量相对较小，工艺气体需求流量大时无法满足；另外，由于气体质量流量计设置在出口管路上，测量的气体温度较高，由于气体质量流量计耐温有限，当烘烤温度过高时，无法满足测量需求，因此适用液体范围有限；另外，用于烘烤液态介质的烘烤装置容器体积、质量较大，一般放置在设备的底部位置，从烘烤装置到工艺腔室距离较长，传输途中管路及器件均需进行温度管理，如遇冷点，会使汽化后的气体重新液化为液体。
液相直接控制法也称为直接汽化法，是使用液体用质量流量计和汽化器 进行汽化的方式来实现工艺介质的液态转化为气态。其主要采用汽化器，通过向汽化器中通入载气，通过载气将液态的工艺介质雾化后喷进汽化室。汽化室外部整体加热，通过汽化室加热散发的热辐射将雾化后的工艺介质进行汽化，还未完全汽化的液体喷雾通过接触汽化室内壁产生的热传导进行完全的汽化后输出。
上述方式虽然可以解决蒸气压差控制法的诸多问题，然而，依然会存在新的问题，由于需要载气将液态的工艺介质雾化，而每次使用后管路中都会有液态的工艺介质残留，影响下次使用，因此，如何清理管路中的工艺介质残留是本领域亟待解决的问题。
发明内容
本申请旨在至少解决现有技术中存在的技术问题之一，提出了一种液源汽化系统，其可以解决现有技术中每次使用后管路中都会有液态的工艺介质残留的问题。
为实现本申请的目的而提供一种液源汽化系统，应用于半导体工艺设备，包括：
汽化装置，用于将液态工艺介质汽化为气态工艺介质；
液源管路，用于向所述汽化装置提供液态工艺介质；
吹扫管路，用于向所述汽化装置提供吹扫气体；
第一控制单元，用于选择性地控制所述吹扫管路或所述液源管路与所述汽化装置连通；
输出管路，用于将汽化后的气态工艺介质输送至所述半导体工艺设备的工艺腔室中；
尾气处理管路，用于将通过所述吹扫气体自所述汽化装置吹出的污染物输送至尾气处理装置；
第二控制单元，用于选择性地控制所述尾气处理管路或所述输出管路与所述汽化装置连通。
在一些实施例中，所述液源汽化系统具有工作状态和第一清洁状态；
在所述工作状态，所述第一控制单元控制所述液源管路与所述汽化装置连通，所述第二控制单元控制所述输出管路与所述汽化装置连通；
在所述第一清洁状态，所述第一控制单元控制所述吹扫管路与所述汽化装置连通，所述第二控制单元控制所述尾气处理管路与所述汽化装置连通。
在一些实施例中，所述汽化装置包括：
汽化器，所述汽化器具有用于汽化所述液态工艺介质的汽化室；
进液管路，所述进液管路的出口端与所述汽化室连通，所述进液管路的进口端分别与所述液源管路的出口端和所述吹扫管路的出口端连通；
出气管路，所述出气管路的进口端与所述汽化室连通，所述出气管路的出口端分别与所述输出管路的进口端和所述尾气处理管路的进口端连通。
在一些实施例中，所述液源汽化系统具有工作状态和第一清洁状态；
在所述工作状态，所述第一控制单元控制所述液源管路与所述进液管路连通，所述第二控制单元控制所述输出管路与所述出气管路连通；
在所述第一清洁状态，所述第一控制单元控制所述吹扫管路与所述进液管路连通，所述第二控制单元控制所述尾气处理管路与所述出气管路连通。
在一些实施例中，所述第一控制单元包括：
第一控制阀，所述第一控制阀设置在所述液源管路上，用于控制所述液源管路的通断；
第二控制阀，所述第二控制阀设置在所述吹扫管路上，用于控制所述吹扫管路的通断；并且
所述第二控制单元包括：
第三控制阀，所述第三控制阀设置在所述输出管路上，用于控制所述输 出管路的通断；
第四控制阀，所述第四控制阀设置在所述尾气处理管路上，用于控制所述尾气处理管路的通断。
在一些实施例中，所述汽化装置还包括：
载气管路，所述载气管路的进口端用于与载气源连通，所述载气管路出口端与所述汽化室连通；
载气控制阀，所述载气控制阀设置在所述载气管路上，所述载气控制阀用于控制所述载气管路的通断。
在一些实施例中，在所述工作状态，所述载气控制阀打开；
在所述第一清洁状态，所述载气控制阀关闭。
在一些实施例中，所述液源汽化系统还具有第二清洁状态；
在所述第二清洁状态，所述第一控制单元控制所述吹扫管路与所述进液管路连通，所述第二控制单元控制所述出气管路与所述尾气处理管路连通，所述载气控制阀打开。
在一些实施例中，所述液源汽化系统还包括：
第一流量计，所述第一流量计设置在所述进液管路上，所述第一流量计用于控制所述液态工艺介质的流量；
第一旁通管路，所述第一旁通管路的进口端与所述进液管路连通，所述第一旁通管路的进口端位于所述第一流量计与所述汽化器之间，所述第一旁通管路的出口端与所述尾气处理管路连通；
旁通控制单元，所述旁通控制单元用于选择性地控制所述第一流量计与所述汽化室连通或者所述第一流量计与所述第一旁通管路连通。
在一些实施例中，所述液源汽化系统具有工作状态和第三清洁状态；
在所述工作状态，所述第一控制单元控制所述液源管路与所述进液管路连通，所述旁通控制单元控制所述第一流量计与所述汽化室连通，所述第二 控制单元控制所述输出管路与所述出气管路连通；
在所述第三清洁状态，所述第一控制单元控制所述吹扫管路与所述进液管路连通，所述旁通控制单元控制所述第一流量计与所述第一旁通管路连通。
在一些实施例中，所述旁通控制单元包括第一旁通阀和第二旁通阀，所述第一旁通阀设置在所述第一旁通管路上，用于控制所述第一旁通管路的通断；所述第二旁通阀设置在所述进液管路上，且位于所述第一旁通管路的进口端与所述汽化器之间，用于控制所述进液管路的通断。
在一些实施例中，所述液源汽化系统还包括：
第一流量计，所述第一流量计设置在所述进液管路上，所述第一流量计用于控制所述液态工艺介质的流量；
第二旁通管路，所述第二旁通管路的进口端与吹扫气源连通，所述第二旁通管路的出口端与所述进液管路连通，所述第二旁通管路的出口端位于所述第一流量计与所述汽化室之间；
第五控制阀，所述第五控制阀设置在所述第二旁通管路上，用于控制所述第二旁通管路的通断。
在一些实施例中，在所述工作状态，所述载气控制阀打开，所述第五控制阀关闭；
所述液源汽化系统还具有第四清洁状态；
在所述第四清洁状态，所述第一控制单元控制所述液源管路和所述吹扫管路与所述进液管路断开，所述载气控制阀、所述第五控制阀打开，所述第二控制单元控制所述尾气处理管路与所述出气管路连通。
在一些实施例中，所述液源汽化系统还包括：
残液收集器，所述残液收集器用于回收残余的液态工艺介质；
残液回收管路，所述残液回收管路的出口端与所述残液收集器连通，所述残液回收管路的进口端与所述进液管路连通；
第六控制阀，所述第六控制阀设置在所述残液回收管路上，用于控制所述残液回收管路的通断；
所述汽化装置还包括：
第七控制阀，所述第七控制阀设置在所述进液管路上，所述第七控制阀位于所述残液回收管路的进口端与所述汽化器之间，用于控制所述汽化器与所述进液管路之间的通断。
在一些实施例中，所述液源汽化系统还包括：
排气管路，所述残液收集器具有排气口，所述排气口通过所述排气管路与所述尾气处理管路连通；
第八控制阀，所述第八控制阀置在所述排气管路上，用于控制所述排气管路的通断。
在一些实施例中，在所述工作状态，所述第七控制阀打开，所述第六控制阀关闭；
所述液源汽化系统还具有第一残液回收状态，在所述第一残液回收状态，所述第一控制单元控制所述吹扫管路与所述进液管路连通，所述第七控制阀关闭，所述第六控制阀、所述第八控制阀打开。
在一些实施例中，所述液源汽化系统还包括：
第九控制阀，所述第九控制阀设置在所述残液回收管路上，所述第九控制阀位于所述第六控制阀与所述残液回收管路的出口端之间；
吹扫支路，所述吹扫支路的进口端与吹扫气源连通，所述吹扫支路的出口端与所述残液回收管路连通，所述吹扫支路的出口端位于所述第九控制阀与所述第六控制阀之间；
第十控制阀，所述第十控制阀设置在所述吹扫支路上，用于控制所述吹扫支路的通断。
在一些实施例中，在所述工作状态，所述第六控制阀、所述第十控制阀 关闭，所述第七控制阀打打开；
所述液源汽化系统还具有第二残液回收状态，在所述第二残液回收状态，所述第一控制单元控制所述液源管路和所述吹扫管路与所述进液管路断开，所述第六控制阀关闭，所述第十控制阀、所述第九控制阀、所述第八控制阀打开。
在一些实施例中，所述液源汽化系统还包括：
余气排出管路，所述余气排出管路的进口端与所述残液回收管路连通，所述余气排出管路的进口端位于所述第六控制阀与所述第九控制阀之间，所述余气排出管路的出口端与所述尾气处理管路连通；
余气控制阀，所述余气控制阀设置在所述余气排出管路上，用于控制所述余气排出管路的通断。
在一些实施例中，所述液源汽化系统还具有管路余气排出状态；
在所述管路余气排出状态，所述第一控制单元控制所述吹扫管路与所述进液管路连通，所述第十控制阀、所述第九控制阀、所述第七控制阀关闭；所述第六控制阀、所述余气控制阀打开。
在一些实施例中，所述汽化装置还包括：
载气管路，所述载气管路进口端用于与载气源连通，所述载气管路出口端与所述汽化室连通；
载气控制阀，所述载气控制阀设置在所述载气管路上，所述载气控制阀用于控制所述载气管路的通断；
第一流量计，所述第一流量计设置在所述进液管路上，所述第一流量计用于计算所述液态工艺介质的流量；
第二旁通管路，所述第二旁通管路的进口端与所述吹扫气源连通，所述第二旁通管路的出口端与所述进液管路连通，所述第二旁通管路的出口端位于所述第一流量计与所述汽化室之间；
第五控制阀，所述第五控制阀设置在所述第二旁通管路上，用于控制所述第二旁通管路的通断。
在一些实施例中，在所述工作状态，所述载气控制阀打开，所述第五控制阀关闭；或者
在所述第一清洁状态，所述第七控制阀打开，所述载气控制阀、所述第五控制阀、所述第六控制阀和所述第十控制阀关闭；或者
所述液源汽化系统还具有第二清洁状态；
在所述第二清洁状态，所述第一控制单元控制所述吹扫管路与所述进液管路连通，所述第五控制阀、所述第六控制阀和所述第十控制阀关闭，所述第七控制阀打开；或者
所述液源汽化系统还具有第四清洁状态；
在所述第四清洁状态，所述第一控制单元控制所述液源管路和所述吹扫管路与所述进液管路断开，所述第十控制阀、所述第六控制阀关闭，所述载气控制阀、所述第五控制阀打开，所述第二控制单元控制所述尾气处理管路与所述出气管路连通；或者
所述液源汽化系统还具有第一残液回收状态；
在所述第一残液回收状态，所述第五控制阀、所述第十控制阀关闭；或者
在所述第二残液回收状态，所述第五控制阀、所述余气控制阀关闭；或者
所述液源汽化系统还具有管路余气排出状态；
在所述管路余气排出状态，所述第一控制单元控制所述吹扫管路与所述进液管路连通，所述第五控制阀、所述第十控制阀、所述第九控制阀、所述第七控制阀关闭；所述第六控制阀、所述余气控制阀打开。
本申请具有以下有益效果：
本申请的液源汽化系统通过设置吹扫管路、第一控制单元、尾气处理管路和第二控制单元，不仅可以通过汽化装置对液态的工艺介质进行汽化，还可以通过第一控制单元和第二控制单元，分别控制吹扫管路和尾气处理管路与汽化装置连通，将吹扫气体通入汽化装置中，通过吹扫气体对汽化装置内部进行清洁，并将吹扫气体流经的相应管路中的工艺介质残留吹出，减少管路中工艺介质的残留，避免对下次使用产生影响。另外，由于设置有尾气处理管路，通过吹扫气体自汽化装置吹出的污染物可以通过尾气处理管路输送至尾气处理装置进行处理，避免污染物对环境的污染。
附图说明
图1为本申请的实施例一的液源汽化系统的结构示意图；
图2为本申请的实施例一的液源汽化系统的工作状态示意图；
图3为本申请的实施例一的液源汽化系统的第一清洁状态示意图；
图4为本申请的实施例一的液源汽化系统的第二清洁状态示意图；
图5为本申请的实施例二的液源汽化系统的第三清洁状态示意图；
图6为本申请的实施例三的液源汽化系统的第四清洁状态示意图；
图7为本申请的实施例四的液源汽化系统的第一残液回收状态示意图；
图8为本申请的实施例五的液源汽化系统的第二残液回收状态示意图；
图9为本申请的实施例六的液源汽化系统的管路余气排出状态示意图；
图10为本申请的实施例七的液源汽化系统的工作状态示意图；
图11为本申请的实施例七的液源汽化系统的第一清洁状态示意图；
图12为本申请的实施例七的液源汽化系统的第二清洁状态示意图；
图13为本申请的实施例七的液源汽化系统的第三清洁状态示意图；
图14为本申请的实施例七的液源汽化系统的第一残液回收状态示意图；
图15为本申请的实施例七的液源汽化系统的第二残液回收状态示意图；
图16为本申请的实施例七的液源汽化系统的管路余气排出状态示意图；
图17为本申请的实施例八的液源汽化系统的管路余气排出状态示意图。
附图标记列表：
10、液源管路；20、汽化装置；21、汽化器；22、进液管路；23、出气
管路；24、载气管路；25、载气控制阀；26、第七控制阀；30、输出管路；40、吹扫管路；50、第一控制单元；51、第一控制阀；52、第二控制阀；60、尾气处理单元；61、尾气处理装置；62、尾气处理管路；70、第二控制单元；71、第三控制阀；72、第四控制阀；80、第一流量计；90、第一旁通管路；100、旁通控制单元；101、第一旁通阀；102、第二旁通阀；110、第二旁通管路；120、第五控制阀；130、残液回收装置；131、残液收集器；132、残液回收管路；133、第六控制阀；134、排气管路；135、第八控制阀；136、第九控制阀；137、余气排出管路；138、余气控制阀；140、吹扫支路；150、第十控制阀。
具体实施方式
为使本领域的技术人员更好地理解本申请的技术方案，下面结合附图来对本申请提供的液源汽化系统进行详细描述。
如图1所示的实施例一，公开了一种液源汽化系统，应用于半导体工艺设备。液源汽化系统包括：液源管路10、汽化装置20、输出管路30、吹扫管路40、第一控制单元50、尾气处理单元60和第二控制单元70。
液源管路10、汽化装置20和输出管路30依次连通。也就是说，液源管路10的进口端与液源连通，液源管路10的出口端与汽化装置20连通，从而使液源管路10可以向汽化装置20提供液态工艺介质。在液态工艺介质进入汽化装置20后，汽化装置20将液态工艺介质汽化为气态工艺介质，然后，输出管路30将汽化后的气态工艺介质输送至半导体工艺设备的工艺腔室中， 从而进行相应的半导体工艺。
在本实施例中，吹扫管路40的进口端与吹扫气源连通，吹扫管路40的出口端与汽化装置20连通，吹扫管路40用于向汽化装置20提供吹扫气体；第一控制单元50用于选择性地控制吹扫管路40与汽化装置20连通或者液源管路10与汽化装置20连通。容易理解的是，在吹扫管路40与汽化装置20连通时，由吹扫气源提供的吹扫气体能够通过吹扫管路40输送至汽化装置20；在液源管路10与汽化装置20连通时，由液源提供的液态工艺介质能够通过液源管路10输送至汽化装置20。第一控制单元50用于实现在向汽化装置20提供吹扫气体与向汽化装置20提供液态工艺介质之间切换。
尾气处理单元60包括尾气处理管路62，尾气处理管路62的进口端与汽化装置20连通，尾气处理管路62的出口端用于与尾气处理装置61连通，尾气处理管路62用于将通过吹扫气体自汽化装置20吹出的污染物输送至尾气处理装置61，以通过尾气处理装置61处理污染物；第二控制单元70用于选择性地控制尾气处理管路62与汽化装置20连通或者输出管路30与汽化装置20连通。容易理解的是，在尾气处理管路62与汽化装置20连通时，通过吹扫气体自汽化装置20吹出的污染物能够通过尾气处理管路62输送至尾气处理装置61；在输出管路30与汽化装置20连通时，通过汽化装置20汽化后的气态工艺介质能够通过输出管路30输送至工艺腔室中。第二控制单元70用于实现在向尾气处理装置61输送污染物与向工艺腔室输送气态工艺介质之间切换。
本申请实施例提供的液源汽化系统，通过设置吹扫管路40、第一控制单元50、尾气处理管路62和第二控制单元70，不仅可以通过汽化装置20对液态的工艺介质进行汽化，还可以通过控制第一控制单元50和第二控制单元70，分别控制吹扫管路40和尾气处理管路62与汽化装置20连通，将吹扫气体通入汽化装置20中，通过吹扫气体对汽化装置20内部进行清洁，并将吹 扫气体流经的相应管路中的工艺介质残留吹出，减少管路中工艺介质的残留，避免对下次使用产生影响。另外，由于设置有尾气处理管路62，通过吹扫气体自汽化装置20吹出的污染物可以通过尾气处理管路62输送至尾气处理装置61进行处理，避免污染物对环境的污染。
如图2至图3所示，在使用过程中，液源汽化系统具有工作状态和第一清洁状态。液源汽化系统通过第一控制单元50和第二控制单元70，实现在工作状态和第一清洁状态间的切换。
如图2所示，在工作状态，第一控制单元50控制液源管路10与汽化装置20连通，第二控制单元70控制输出管路30与汽化装置20连通。液态的工艺介质通过液源管路10进入汽化装置20，汽化装置20将液态的工艺介质汽化，再通过输出管路30将汽化后的气态工艺介质输送至半导体工艺设备的工艺腔室中，从而进行相应的半导体工艺。
如图3所示，在第一清洁状态，第一控制单元50控制吹扫管路40与汽化装置20连通，第二控制单元70控制尾气处理管路62与汽化装置20连通。吹扫气体依次经过吹扫管路40、汽化装置20、尾气处理管路62和尾气处理装置61，吹扫气体将其流经的管路中的空气、水分、颗粒等吹扫干净，同时，通过吹扫气体自汽化装置20吹出的污染物可以通过尾气处理管路62输送至尾气处理装置61进行处理，避免污染物对环境的污染。
需要说明的是，第一清洁状态除了可以在液源汽化系统对液态工艺介质汽化后对汽化装置20进行清洁，还可以在液源汽化系统对工艺介质汽化前进行清洁，将管路或汽化装置20中的空气、水分、颗粒等吹扫干净，为工艺做好准备工作。
更进一步的，在本实施例中，汽化装置20包括汽化器21、进液管路22、出气管路23、载气管路24和载气控制阀25。汽化器21具有用于汽化液态工艺介质的汽化室；进液管路22的出口端与汽化室连通，进液管路22的进口 端分别与液源管路10的出口端和吹扫管路40的出口端连通；出气管路23的进口端与汽化室连通，出气管路23的出口端分别与输出管路30的进口端和尾气处理管路62的进口端通。载气管路24的进口端用于与载气源连通，载气管路24的出口端与汽化室连通；载气控制阀25设置在载气管路24上，载气控制阀25用于控制载气管路24的通断。
尾气处理单元60还包括真空泵，尾气处理管路62的进口端与出气管路23的出口端连通，尾气处理管路62的出口端与尾气处理装置61连通，真空泵设置在尾气处理管路62上。
第一控制单元50包括第一控制阀51和第二控制阀52，第一控制阀51设置在液源管路10上，用于控制液源管路10的通断；第二控制阀52设置在吹扫管路40上，用于控制吹扫管路40的通断。
第二控制单元70包括第三控制阀71和第四控制阀72，第三控制阀71设置在输出管路30上，用于控制输出管路30的通断；第四控制阀72设置在尾气处理管路62上，用于控制尾气处理管路62的通断，真空泵位于第四控制阀72与尾气处理装置61之间，用于为尾气处理管路62中的气体向尾气处理装置61流动提供动力。
液源汽化系统具有工作状态、第一清洁状态和第二清洁状态。
如图2所示，在工作状态，第一控制阀51打开、第二控制阀52关闭，第三控制阀71打开、第四控制阀72关闭，载气控制阀25打开。液源管路10、进液管路22、汽化器21、出气管路23、输出管路30依次连通。液态的工艺介质依次通过液源管路10、进液管路22进入汽化器21，汽化器21将液态的工艺介质汽化，汽化后的气态工艺介质再依次通过出气管路23、输出管路30进入半导体工艺设备的工艺腔室中，从而进行相应的半导体工艺。
如图3所示，在第一清洁状态，第二控制阀52打开，第一控制阀51关闭，第四控制阀72打开，第三控制阀71关闭，载气控制阀25关闭。吹扫气 体依次经过吹扫管路40、进液管路22、汽化器21、出气管路23和尾气处理管路62，从而将管路中和汽化器21中的残液、空气、水分、颗粒等吹扫干净，同时，吹扫气体自汽化装置20吹出的污染物通过尾气处理管路62进入尾气处理装置61中，从而通过尾气处理装置61将污染物处理，避免污染物对环境的污染。
如图4所示，在第二清洁状态，第二控制阀52打开，第一控制阀51关闭，第四控制阀72打开，第三控制阀71关闭，载气控制阀25打开。第二清洁状态主要是为了在工艺结束后，将管道、汽化器21中残余液体、气体排出干净。吹扫气体依次经过吹扫管路40、进液管路22、汽化器21、出气管路23和尾气处理管路62，同时，由于载气控制阀25打开，在载气作用下，汽化器21将内部的液体汽化为气体，然后被吹扫气体一同吹出，从而将管路中和汽化器21中的残液、气体吹扫干净，同时，吹扫气体自汽化装置20吹出的污染物通过尾气处理管路62进入尾气处理装置61中，从而通过尾气处理装置61将污染物处理，避免污染物对环境的污染。
需要说明的是，在上述实施例一中，液源汽化系统还包括第一流量计80，第一流量计80设置在进液管路22上，第一流量计80用于控制液态工艺介质的流量。
还需要说明的是，在上述实施例一中，第一控制单元50包括第一控制阀51和第二控制阀52，但是这并不是限制性的，例如，在图未示出的一些其他实施例中，第一控制单元50还可以是三通阀，三通阀的第一端与进液管路22连通，三通阀的第二端与液源管路10连通，三通阀的第三端与吹扫管路40连通，从而通过三通阀实现选择性地将吹扫管路40与进液管路22连通或者液源管路10与进液管路22连通。也就是说，在不违背本申请的工作原理的前提下，只要是可以实现在吹扫管路40与进液管路22连通，和液源管路10与进液管路22连通之间切换的结构，均在本申请的保护范围之内。同 理，在上述实施例一中，第二控制单元70也可以是三通阀，此处不再赘述。
如图5所示的本申请的实施例二，还公开了一种液源汽化系统，其与实施例一基本相同，区别在于，在本实施例中，液源汽化系统还包括：第一旁通管路90和旁通控制单元100，第一旁通管路90的进口端与进液管路22连通，第一旁通管路90的进口端位于第一流量计80与汽化器21之间，第一旁通管路90的出口端与尾气处理管路62连通，具体地，第一旁通管路90的出口端连接在尾气处理管路62上，且位于第四控制阀72与真空泵之间；旁通控制单元100用于选择性地控制第一流量计80与汽化室连通或者第一流量计80与第一旁通管路90连通。
其中，旁通控制单元100包括第一旁通阀101和第二旁通阀102，第一旁通阀101设置在第一旁通管路90上，用于控制第一旁通管路90的通断；第二旁通阀102设置在进液管路22上，且位于第一旁通管路90的进口端与汽化器21之间，用于控制进液管路22的通断。
液源汽化系统具有工作状态和第三清洁状态。
在工作状态，第一控制单元50控制液源管路10与进液管路22连通，旁通控制单元100控制第一流量计80与汽化室连通，第二控制单元70控制输出管路30与出气管路23连通。具体地，第一控制阀51打开、第二控制阀52关闭；第三控制阀71打开、第四控制阀72关闭，第二旁通阀102打开、第一旁通阀101关闭，载气控制阀25打开。在工作状态，液源管路10、第一流量计80、进液管路22、汽化器21、出气管路23、输出管路30依次连通。液态的工艺介质依次通过液源管路10、第一流量计80、进液管路22进入汽化器21，汽化器21将液态的工艺介质汽化，汽化后的气态工艺介质再依次通过出气管路23、输出管路30进入半导体工艺设备的工艺腔室中，从而进行相应的半导体工艺。
如图5所示，在第三清洁状态，第一控制单元50控制吹扫管路40与进 液管路22连通，旁通控制单元100控制第一流量计80与第一旁通管路90连通。具体地，第二控制阀52打开、第一控制阀51关闭；第一旁通阀101打开、第二旁通阀102关闭，载气控制阀25关闭。从而使吹扫管路40、第一流量计80、进液管路22、第一旁通管路90、尾气处理管路62、真空泵、尾气处理装置61依次连通。由于通常使用的液态工艺介质，可能会有自燃性、腐蚀性、毒性等危险特性。当第一流量计80需要维护和更换时，为保证人员安全，必须进行充分的吹扫，防止器件和管路残留。在将液源汽化系统处于第三清洁状态时，吹扫气体依次通过吹扫管路40、第一流量计80、进液管路22、第一旁通管路90、尾气处理管路62、真空泵和尾气处理装置61，将其中的污染物和残液吹至尾气处理装置61，从而在第一流量计80维护和更换过程中保证操作人员的安全。
需要说明的是，在上述实施例二中，旁通控制单元100包括第一旁通阀101和第二旁通阀102，但是这并不是限制性的，例如，在图未示出的一些其他实施例中，第一控制单元50还可以是三通阀，三通阀的第一端与进液管路22连通，三通阀的第二端与第一旁通管路90连通，三通阀的第三端与汽化器21连通，从而通过三通阀实现进液管路22与第一旁通管路90连通或进液管路22与汽化器21连通。也就是说，在不违背本申请的工作原理的前提下，只要是可以实现汽化器21与第一旁通管路90之间切换的结构，均在本申请的保护范围之内。
如图6所示的本申请的实施例三，还公开了一种液源汽化系统，其与实施例一基本相同，区别在于，在本实施例中，液源汽化系统还包括：第二旁通管路110和第五控制阀120，第二旁通管路110的进口端与吹扫气源连通，第二旁通管路110的出口端与进液管路22连通，第二旁通管路110的出口端位于第一流量计80与汽化室之间；第五控制阀120设置在第二旁通管路110上，用于控制第二旁通管路110的通断。
液源汽化系统具有工作状态和第四清洁状态。
在工作状态，第一控制阀51打开、第二控制阀52关闭、第五控制阀120关闭，第三控制阀71打开、第四控制阀72关闭，载气控制阀25打开。液源管路10、进液管路22、汽化器21、出气管路23、输出管路30依次连通。液态的工艺介质依次通过液源管路10、进液管路22进入汽化器21，汽化器21将液态的工艺介质汽化，汽化后的气态工艺介质再依次通过出气管路23、输出管路30进入半导体工艺设备的工艺腔室中，从而进行相应的半导体工艺。
如图6所示，在第四清洁状态，第五控制阀120打开、第一控制阀51关闭、第二控制阀52关闭，载气控制阀25打开，第四控制阀72打开，第三控制阀71关闭。
在第四清洁状态主要用于第一流量计80发生故障，无法通过液体的情况。当液源汽化系统处于第四清洁状态时，吹扫气源、第二旁通管路110、进液管路22、汽化器21、出气管路23、尾气处理管路62、真空泵和尾气处理装置61依次连通。吹扫气体通过第二旁通管路110绕过第一流量计80，再依次通过进液管路22进入汽化器21，同时，在载气的辅助下，汽化器21将内部的残液汽化，再在吹扫气体的作用下，将管路中和汽化器21中的残液、空气、水分、颗粒等吹扫干净，并通过出气管路23和尾气处理管路62将汽化后的气体以及污染物排入尾气处理装置61中，最后通过尾气处理装置61将污染物处理，避免污染物对环境的污染。通过设置第二旁通管路110，可以在第一流量计80发生故障无法通过液体时，先将第一流量计80后端管路残液排净，从而以保证整体安全性。
现有技术中，若汽化器21发生加热故障，无法继续对液态工艺介质进行汽化，那么管路中残余液态工艺介质的排出就成了困难。为了解决该问题，如图7所示的本申请的实施例四，还公开了一种液源汽化系统，其与实施例一基本相同，区别在于，在本实施例中，液源汽化系统还包括：残液回收装 置130，残液回收装置130与进液管路22连通，残液回收装置130用于回收残余的工艺介质。
本申请实施例四的液源汽化系统，在实施例一的基础上增加了残液回收装置130，可以对管路中的残液进行回收，从而减少液态工艺介质的损耗，降低材料成本。
具体来说，在本实施例四中，如图7所示，残液回收装置130包括：残液收集器131、残液回收管路132和第六控制阀133，残液收集器131用于回收残余的液态工艺介质；残液回收管路132的出口端与残液收集器131连通，残液回收管路132的进口端与进液管路22连通；第六控制阀133设置在残液回收管路132上，用于控制残液回收管路132的通断。
为了配合残液回收装置130回收残液，汽化装置20还包括：第七控制阀26，第七控制阀26设置在进液管路22上，第七控制阀26位于残液回收管路132的进口端与汽化器21之间，用于控制汽化器21的汽化室与进液管路22之间的通断。
更进一步地，残液回收装置130还包括排气管路134和第八控制阀135，残液收集器131具有排气口，排气口通过排气管路134与尾气处理管路62连通；第八控制阀135置在排气管路134上，用于控制排气管路134的通断。通过设置排气管路134可以将残液收集器131的容器中多余气体和压力排入尾气处理管路62，从而使残液更加方便收集。
在本实施例中，液源汽化系统具有工作状态和第一残液回收状态。
在工作状态，第一控制阀51打开、第二控制阀52关闭；第三控制阀71打开、第四控制阀72关闭，第七控制阀26打开、第六控制阀133关闭，载气控制阀25打开。在工作状态，液源管路10、第一流量计80、进液管路22、汽化器21、出气管路23、输出管路30依次连通。液态的工艺介质依次通过液源管路10、第一流量计80、进液管路22进入汽化器21，汽化器21将液 态的工艺介质汽化，汽化后的气态工艺介质再依次通过出气管路23、输出管路30进入半导体工艺设备的工艺腔室中，从而进行相应的半导体工艺。
如图7所示，在第一残液回收状态，第二控制阀52打开、第一控制阀51关闭，第六控制阀133打开、第七控制阀26关闭，第八控制阀135打开，载气控制阀25关闭。
第一残液回收状态主要用于汽化器21发生故障无法执行汽化工作时，使管路中的残液随着吹扫气体进入残液收集器131中回收。当液源汽化系统处于第一残液回收状态时，吹扫气源、吹扫管路40、进液管路22、残液回收管路132和残液收集器131依次连通，残液收集器131的排气口、排气管路134、尾气处理管路62、尾气处理装置61依次连通。吹扫气体依次通过吹扫管路40、进液管路22、残液回收管路132进入残液收集器131中，再经过残液收集器131的排气口、排气管路134、尾气处理管路62进入尾气处理装置61中。在此过程中，管路中的残液随着吹扫气体进入残液收集器131中回收，而管路中的气态工艺介质或其他废气可以随着吹扫气体一同进入尾气处理装置61中进行处理，从而在保证残液收集的同时，还可以避免环境污染。
本申请实施例四的液源汽化系统，通过设置残液收集器131、残液回收管路132和第六控制阀133，并在残液回收管路132的进口端与汽化器21之间的进液管路22上设置第七控制阀26，可以通过第六控制阀133和第七控制阀26选择性地控制进液管路22与残液回收管路132连通或进液管路22与汽化器21连通，从而可以在进液管路22与残液回收管路132连通时，对管路中的残液进行回收，从而减少液态工艺介质的损耗，降低材料成本。另外，通过设置排气管路134可以将残液收集器131的容器中多余气体和压力排入尾气处理管路62，并将管路中的气态工艺介质或其他废气随着吹扫气体一同进入尾气处理装置61中进行处理，从而在方便残液收集的同时，还可以避免环境污染，属于典型的一物多用。
如图8所示的本申请的实施例五，还公开了一种液源汽化系统，其与实施例四基本相同，区别在于，在本实施例中，液源汽化系统还包括：第九控制阀136，第九控制阀136设置在残液回收管路132上，第九控制阀136位于第六控制阀133与残液回收管路132的出口端之间。
液源汽化系统还包括：吹扫支路140和第十控制阀150，吹扫支路140的进口端与吹扫气源连通，吹扫支路140的出口端与残液回收管路132连通，吹扫支路140的出口端位于第九控制阀136与第六控制阀133之间；第十控制阀150设置在吹扫支路140上，用于控制吹扫支路140的通断。
在本实施例中，液源汽化系统具有工作状态和第二残液回收状态。
在工作状态，第一控制阀51打开、第二控制阀52关闭、第十控制阀150关闭；第三控制阀71打开、第四控制阀72关闭，第七控制阀26打开、第六控制阀133关闭，载气控制阀25打开。在工作状态，液源管路10、第一流量计80、进液管路22、汽化器21、出气管路23、输出管路30依次连通。液态的工艺介质依次通过液源管路10、第一流量计80、进液管路22进入汽化器21，汽化器21将液态的工艺介质汽化，汽化后的气态工艺介质再依次通过出气管路23、输出管路30进入半导体工艺设备的工艺腔室中，从而进行相应的半导体工艺。
如图8所示，在第二残液回收状态，第十控制阀150打开、第一控制阀51关闭、第二控制阀52关闭，第九控制阀136打开、第六控制阀133关闭、第七控制阀26关闭，第八控制阀135打开，载气控制阀25关闭。
第二残液回收状态主要用于在残液收集完成后，对管路进行吹扫工作，以排出管路和残液收集器131内部的空气、水分等杂质。当液源汽化系统处于第二残液回收状态时，吹扫气源、吹扫支路140、残液回收管路132和残液收集器131依次连通，残液收集器131的排气口、排气管路134、尾气处理管路62、尾气处理装置61依次连通。吹扫气体依次通过吹扫支路140、残 液回收管路132进入残液收集器131中，再经过残液收集器131的排气口、排气管路134、尾气处理管路62进入尾气处理装置61中。在此过程中，管路中以及残液收集器131中的空气、水汽等杂质随着吹扫气体从残液收集器131中排出，并随着吹扫气体一同进入尾气处理装置61中进行处理，从而保证收集的残液不会与气体杂质反应，处于相对稳定的状态；同时，还可以避免排除的废气环境污染。
如图9所示的本申请的实施例六，还公开了一种液源汽化系统，其与实施例五基本相同，区别在于，在本实施例中，残液回收装置130还包括：余气排出管路137和余气控制阀138，余气排出管路137的进口端与残液回收管路132连通，余气排出管路137的进口端位于第六控制阀133与第九控制阀136之间，余气排出管路137的出口端与尾气处理管路62连通，余气排出管路137的出口端位于第四控制阀72与真空泵之间；余气控制阀138设置在余气排出管路137上，用于控制余气排出管路137的通断。
在本实施例中，液源汽化系统具有工作状态和管路余气排出状态。
在工作状态，第一控制阀51打开、第二控制阀52关闭、第十控制阀150关闭；第三控制阀71打开、第四控制阀72关闭，第七控制阀26打开、第六控制阀133关闭，载气控制阀25打开。在工作状态，液源管路10、第一流量计80、进液管路22、汽化器21、出气管路23、输出管路30依次连通。液态的工艺介质依次通过液源管路10、第一流量计80、进液管路22进入汽化器21，汽化器21将液态的工艺介质汽化，汽化后的气态工艺介质再依次通过出气管路23、输出管路30进入半导体工艺设备的工艺腔室中，从而进行相应的半导体工艺。
如图9所示，在管路余气排出状态，第二控制阀52打开、第一控制阀51关闭、第十控制阀150关闭，第六控制阀133打开、余气控制阀138打开、第七控制阀26关闭、第九控制阀136关闭，载气控制阀25关闭。
管路余气排出状态主要用于在残液收集完成后，需要对残液收集器131进行拆除时，通过吹扫气体对管路进行吹扫工作，以排出管路内部残余的气态工艺介质以及空气、水分等杂质。
当液源汽化系统处于管路余气排出状态时，吹扫气源、吹扫管路40、进液管路22、残液回收管路132、余气排出管路137、尾气处理管路62、尾气处理装置61依次连通。吹扫气体依次通过吹扫管路40、进液管路22、残液回收管路132、余气排出管路137、尾气处理管路62进入尾气处理装置61中，在此过程中吹扫气体带着管路中气态工艺介质以及空气、水分等杂质一同进入尾气处理装置61中进行处理，从而将管路中的气态工艺介质以及空气、水分等杂质清除，保证了残液收集器131拆除过程的安全性。同时，还可以避免排出的废气环境污染。
如图10至图16所示的本申请的实施例七，还公开了一种液源汽化系统，其与实施例六基本相同，区别在于，在本实施例中，液源汽化系统还包括：第二旁通管路110和第五控制阀120，第二旁通管路110的进口端与吹扫气源连通，第二旁通管路110的出口端与进液管路22连通，第二旁通管路110的出口端位于第一流量计80与汽化室之间；第五控制阀120设置在第二旁通管路110上，用于控制第二旁通管路110的通断。
在本实施例中，液源汽化系统具有工作状态、第一清洁状态、第二清洁状态、第四清洁状态、第一残液回收状态、第二残液回收状态、管路余气排出状态。
如图10所示，在工作状态，第一控制阀51打开、第二控制阀52关闭、第五控制阀120关闭、第十控制阀150关闭，第七控制阀26打开、第六控制阀133关闭，载气控制阀25打开，第三控制阀71打开、第四控制阀72关闭。
在工作状态，液源管路10、第一流量计80、进液管路22、汽化器21、出气管路23、输出管路30依次连通。液态的工艺介质依次通过液源管路10、 第一流量计80、进液管路22进入汽化器21，汽化器21将液态的工艺介质汽化，汽化后的气态工艺介质再依次通过出气管路23、输出管路30进入半导体工艺设备的工艺腔室中，从而进行相应的半导体工艺。
如图11所示，在第一清洁状态，第二控制阀52打开、第一控制阀51关闭、第五控制阀120关闭、第十控制阀150关闭，第七控制阀26打开、第六控制阀133关闭，载气控制阀25关闭，第四控制阀72打开，第三控制阀71关闭。
吹扫气体依次经过吹扫管路40、进液管路22、汽化器21、出气管路23，从而将管路中和汽化器21中的残液、空气、水分、颗粒等吹扫干净，同时，吹扫气体自汽化装置20吹出的污染物通过尾气处理管路62进入尾气处理装置61中，从而通过尾气处理装置61将污染物处理，避免污染物对环境的污染。
如图12所示，在第二清洁状态，第二控制阀52打开、第一控制阀51关闭、第五控制阀120关闭、第十控制阀150关闭，第七控制阀26打开、第六控制阀133关闭，载气控制阀25打开，第四控制阀72打开，第三控制阀71关闭。
第二清洁状态主要是为了在工艺结束后，将管路、汽化器21中内残余液体、气体排出。吹扫气体依次经过吹扫管路40、进液管路22、汽化器21、出气管路23，同时，由于载气控制阀25打开，在载气作用下，汽化器21将内部的液体汽化为气体，然后被吹扫气体一同吹出，从而将管路中和汽化器21中的残液、气体吹扫干净，同时，吹扫气体自汽化装置20吹出的污染物通过尾气处理管路62进入尾气处理装置61中，从而通过尾气处理装置61将污染物处理，避免污染物对环境的污染。
如图13所示，在第四清洁状态，第五控制阀120打开、第一控制阀51关闭、第二控制阀52关闭、第十控制阀150关闭，第七控制阀26打开、第 六控制阀133关闭，载气控制阀25打开，第四控制阀72打开，第三控制阀71关闭。
第四清洁状态主要用于第一流量计80发生故障，无法通过液体的情况。当液源汽化系统处于第四清洁状态时，吹扫气源、第二旁通管路110、进液管路22、汽化器21、出气管路23、尾气处理管路62、真空泵和尾气处理装置61依次连通。吹扫气体通过第二旁通管路110绕过第一流量计80，再依次通过进液管路22进入汽化器21，同时，在载气的辅助下，汽化器21将内部的残液汽化，再在吹扫气体的作用下，将管路中和汽化器21中的残液、空气、水分、颗粒等吹扫干净，并通过出气管路23和尾气处理管路62将汽化后的气体以及污染物排入尾气处理装置61中，最后通过尾气处理装置61将污染物处理，避免污染物对环境的污染。通过设置第二旁通管路110，可以在第一流量计80发生故障无法通过液体时，先将第一流量计80后端管路残液排净，从而以保证整体安全性。
如图14所示，在第一残液回收状态，第二控制阀52打开、第一控制阀51关闭、第五控制阀120关闭、第十控制阀150关闭，第六控制阀133打开、第九控制阀136打开、第七控制阀26关闭、余气控制阀138关闭，第八控制阀135打开，载气控制阀25关闭、第三控制阀71关闭、第四控制阀72关闭。
第一残液回收状态主要用于汽化器21发生故障无法执行汽化工作时，使管路中的残液随着吹扫气体进入残液收集器131中回收。当液源汽化系统处于第一残液回收状态时，吹扫气源、吹扫管路40、进液管路22、残液回收管路132和残液收集器131依次连通，残液收集器131的排气口、排气管路134、尾气处理管路62、尾气处理装置61依次连通。吹扫气体依次通过吹扫管路40、进液管路22、残液回收管路132进入残液收集器131中，再经过残液收集器131的排气口、排气管路134、尾气处理管路62进入尾气处理装置61中。在此过程中，管路中的残液随着吹扫气体进入残液收集器131中回收， 而管路中的气态工艺介质或其他废气可以随着吹扫气体一同进入尾气处理装置61中进行处理，从而在保证残液收集的同时，还可以避免环境污染。
本申请实施例七的液源汽化系统，通过设置残液收集器131、残液回收管路132和第六控制阀133，并在残液回收管路132的进口端与汽化器21之间的进液管路22上设置第七控制阀26，可以通过第六控制阀133和第七控制阀26选择性地控制进液管路22与残液回收管路132连通或进液管路22与汽化器21连通，从而可以在进液管路22与残液回收管路132连通时，对管路中的残液进行回收，从而减少液态工艺介质的损耗，降低材料成本。另外，通过设置排气管路134可以将残液收集器131的容器中多余气体和压力排入尾气处理管路62，并将管路中的气态工艺介质或其他废气随着吹扫气体一同进入尾气处理装置61中进行处理，从而在方便残液收集的同时，还可以避免环境污染，属于典型的一物多用。
如图15所示，在第二残液回收状态，第十控制阀150打开、第一控制阀51关闭、第二控制阀52关闭、第五控制阀120关闭，第九控制阀136打开、第六控制阀133关闭、第七控制阀26关闭、余气控制阀138关闭，第八控制阀135打开，载气控制阀25关闭、第三控制阀71关闭、第四控制阀72关闭。
第二残液回收状态主要用于在残液收集完成后，对管路进行吹扫工作，以排出管路和残液收集器131内部的空气、水分等杂质。当液源汽化系统处于第二残液回收状态时，吹扫气源、吹扫支路140、残液回收管路132和残液收集器131依次连通，残液收集器131的排气口、排气管路134、尾气处理管路62、尾气处理装置61依次连通。吹扫气体依次通过吹扫支路140、残液回收管路132进入残液收集器131中，再经过残液收集器131的排气口、排气管路134、尾气处理管路62进入尾气处理装置61中。在此过程中，管路中以及残液收集器131中的空气、水汽等杂质随着吹扫气体从残液收集器 131中排出，并随着吹扫气体一同进入尾气处理装置61中进行处理，从而保证收集的残液不会与气体杂质反应，处于相对稳定的状态；同时，还可以避免排除的废气环境污染。
如图16所示，在管路余气排出状态，第二控制阀52打开、第一控制阀51关闭、第五控制阀120关闭、第十控制阀150关闭，第六控制阀133打开、余气控制阀138打开、第七控制阀26关闭、第九控制阀136关闭，第八控制阀135，载气控制阀25关闭，第三控制阀71关闭、第四控制阀72关闭。
管路余气排出状态主要用于在残液收集完成后，需要对残液收集器131进行拆除时，通过吹扫气体对管路进行吹扫工作，以排除出管路内部残余的气态工艺介质以及空气、水分等杂质。
当液源汽化系统处于管路余气排出状态时，吹扫气源、吹扫管路40、进液管路22、残液回收管路132、余气排出管路137、尾气处理管路62、尾气处理装置61依次连通。吹扫气体依次通过吹扫管路40、进液管路22、残液回收管路132、余气排出管路137、尾气处理管路62进入尾气处理装置61中，在此过程中吹扫气体带着管路中气态工艺介质以及空气、水分等杂质一同进入尾气处理装置61中进行处理，从而将管路中的气态工艺介质以及空气、水分等杂质清除，保证了残液收集器131拆除过程的安全性。同时，还可以避免排出的废气环境污染。
需要说明的是，在本实施例中，管路余气排出状态也可以实现实施例二中的第三清洁状态的功能，也就是说，当第一流量计80需要维护和更换时，为保证人员安全，可以将本实施例的液源汽化系统调整至管路余气排出状态，将其中的污染物和残液吹至尾气处理系统处理，从而保证在第一流量计80维护和更换过程中操作人员的安全，属于典型的一物多用。
现有技术中，汽化器21中的雾化器和流量计均有小孔径结构，当液源为粘稠型时，易造成堵塞，因此，需要对汽化器21和流量计进行更换和维护。
为了解决上述问题，本实施例的液源汽化系统还具有第一冲洗状态，第一冲洗状态与第一残液回收状态基本相同，区别在于，在第一冲洗状态下，第一控制阀51打开、第二控制阀52关闭。而且液源中通入的液体不再是工艺介质，而是改为有机溶剂，例如：正辛烷等，通过有机溶剂对管路及器件进行冲洗，管路冲洗后的残液及有机溶剂经依次通过吹扫管路40、进液管路22、残液回收管路132进入残液收集器131中，将冲洗后的废液收集，从而完成对管路的冲洗。之后，可以进入第一残液回收状态，通过吹扫气体对管路中的残液进行回收，完成管路的清洁工作。
除此之外，本实施例的液源汽化系统还具有第二冲洗状态，第二冲洗状态与第二清洁状态基本相同，区别在于，在第二冲洗状态下，第一控制阀51打开、第二控制阀52关闭。而且液源中通入的液体同样不再是工艺介质，而是改为有机溶剂，例如：正辛烷等，有机溶剂依次经过吹扫管路40、进液管路22、汽化器21、出气管路23，同时，由于载气控制阀25打开，在载气作用下，汽化器21将内部的液态有机溶剂汽化为气体，同时将汽化器21内的残余工艺介质溶解，然后一同吹出，从而将管路中和汽化器21中的残余工艺介质冲洗干净，并通过尾气处理管路62进入尾气处理装置61中，从而通过尾气处理装置61将污染物处理，避免污染物对环境的污染。之后，可以进入第二清洁状态，通过吹扫气体对管路中的残液进行回收，完成管路的清洁工作。
第一冲洗状态与第二冲洗状态的区别在于，第一冲洗状态是针对汽化器21之前的管路进行冲洗，而第二冲洗状态可以实现汽化器21内部的冲洗。
如图17所示的本申请的实施例八，还公开了一种液源汽化系统，其与实施例七基本相同，区别在于，在本实施例中，排气管路134不经过真空泵，而是直接连接在尾气处理装置61上。采用这种结构，主要是为了在装机完成后，直接将液源汽化系统调整至第二残液回收状态，由于是残液收集器131 首次吹扫，管道内无特殊气体或者液体，因此，可不经过真空泵，直接吹扫进入尾气处理系统。
需要说明的是，在上述实施例中，为了防止载气进入汽化器21后对原本温度造成波动，汽化装置20还包括热交换器，热交换器设置在载气管路24上，热交换器用于对载气进行加热，以便在较短时间内将载气的温度提高至需要的温度，从而提高汽化效果。
在上述实施例中，第一流量计80为质量流量计，可精确控制液体的流量。另外，为了精确控制载气的流量，在载气管路24上设置有气体流量计，气体流量计为质量流量计，可精确控制气体的流量。但是这并不是限制性，在不违反本申请的发明构思前提下，只要是可以精确计量液体或气体流量的装置，均在申请的保护范围之内。
还需要说明的是，为了监控管路中液体或气体的状态，可以在管路上设置压力检测装置，确认整体传输性能及安全。以实施例七为例：
可以在进液管路22上设置第一压力检测装置，第一压力检测装置位于残液回收管路132的进口端与第一流量计80之间。用于检测进入汽化器21的流体压力，确认液源供应压力的稳定性。
还可以在出气管路23上设置第二压力检测装置，检测汽化器21后端出气压力，如出气压力过低，可适当增加载气压力及载气量以提升出气压力，保证流体的正向传输，同时还可确认管路的密封性。
还可以在余气排出管路137上设置第三压力检测装置，第三压力检测装置位于第三压力检测装置的进口端与余气控制阀138之间，可确认管路的密封性。
还可以在真空泵的入口位置处设置第四压力检测装置，可确认真空泵是否正常运行，管路是否处于真空状态。
还需要说明的是，在上述实施例中，采用真空泵利用负压将管道中的气 体抽走并排至尾气处理装置中，但是这并不是限制性的，还可以是气泵、风扇等装置，只要是可以产生气流流动，将气流排至尾气处理装置中的装置均在本申请的保护范围之内。
可以理解的是，以上实施方式仅仅是为了说明本申请的原理而采用的示例性实施方式，然而本申请并不局限于此。对于本领域内的普通技术人员而言，在不脱离本申请的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本申请的保护范围。

Claims (22)

  1. 一种液源汽化系统，应用于半导体工艺设备，其特征在于，包括：
    汽化装置(20)，用于将液态工艺介质汽化为气态工艺介质；
    液源管路(10)，用于向所述汽化装置(20)提供液态工艺介质；
    吹扫管路(40)，用于向所述汽化装置(20)提供吹扫气体；
    第一控制单元(50)，用于选择性地控制所述吹扫管路(40)或所述液源管路(10)与所述汽化装置(20)连通；
    输出管路(30)，用于将汽化后的气态工艺介质输送至所述半导体工艺设备的工艺腔室中；
    尾气处理管路(62)，用于将通过所述吹扫气体自所述汽化装置(20)吹出的污染物输送至尾气处理装置(61)；
    第二控制单元(70)，用于选择性地控制所述尾气处理管路(62)或所述输出管路(30)与所述汽化装置(20)连通。
  2. 根据权利要求1所述的液源汽化系统，其特征在于，
    所述液源汽化系统具有工作状态和第一清洁状态；
    在所述工作状态，所述第一控制单元(50)控制所述液源管路(10)与所述汽化装置(20)连通，所述第二控制单元(70)控制所述输出管路(30)与所述汽化装置(20)连通；
    在所述第一清洁状态，所述第一控制单元(50)控制所述吹扫管路(40)与所述汽化装置(20)连通，所述第二控制单元(70)控制所述尾气处理管路(62)与所述汽化装置(20)连通。
  3. 根据权利要求1所述的液源汽化系统，其特征在于，所述汽化装置(20)包括：
    汽化器(21)，所述汽化器(21)具有用于汽化所述液态工艺介质的汽 化室；
    进液管路(22)，所述进液管路(22)的出口端与所述汽化室连通，所述进液管路(22)的进口端分别与所述液源管路(10)的出口端和所述吹扫管路(40)的出口端连通；
    出气管路(23)，所述出气管路(23)的进口端与所述汽化室连通，所述出气管路(23)的出口端分别与所述输出管路(30)的进口端和所述尾气处理管路(62)的进口端连通。
  4. 根据权利要求3所述的液源汽化系统，其特征在于，
    所述液源汽化系统具有工作状态和第一清洁状态；
    在所述工作状态，所述第一控制单元(50)控制所述液源管路(10)与所述进液管路(22)连通，所述第二控制单元(70)控制所述输出管路(30)与所述出气管路(23)连通；
    在所述第一清洁状态，所述第一控制单元(50)控制所述吹扫管路(40)与所述进液管路(22)连通，所述第二控制单元(70)控制所述尾气处理管路(62)与所述出气管路(23)连通。
  5. 根据权利要求3所述的液源汽化系统，其特征在于，所述第一控制单元(50)包括：
    第一控制阀(51)，所述第一控制阀(51)设置在所述液源管路(10)上，用于控制所述液源管路(10)的通断；
    第二控制阀(52)，所述第二控制阀(52)设置在所述吹扫管路(40)上，用于控制所述吹扫管路(40)的通断；并且
    所述第二控制单元(70)包括：
    第三控制阀(71)，所述第三控制阀(71)设置在所述输出管路(30)上，用于控制所述输出管路(30)的通断；
    第四控制阀(72)，所述第四控制阀(72)设置在所述尾气处理管路(62)上，用于控制所述尾气处理管路(62)的通断。
  6. 根据权利要求4所述的液源汽化系统，其特征在于，所述汽化装置(20)还包括：
    载气管路(24)，所述载气管路(24)的进口端用于与载气源连通，所述载气管路(24)出口端与所述汽化室连通；
    载气控制阀(25)，所述载气控制阀(25)设置在所述载气管路(24)上，所述载气控制阀(25)用于控制所述载气管路(24)的通断。
  7. 根据权利要求6所述的液源汽化系统，其特征在于，
    在所述工作状态，所述载气控制阀(25)打开；
    在所述第一清洁状态，所述载气控制阀(25)关闭。
  8. 根据权利要求6所述的液源汽化系统，其特征在于，
    所述液源汽化系统还具有第二清洁状态；
    在所述第二清洁状态，所述第一控制单元(50)控制所述吹扫管路(40)与所述进液管路(22)连通，所述第二控制单元(70)控制所述出气管路(23)与所述尾气处理管路(62)连通，所述载气控制阀(25)打开。
  9. 根据权利要求3所述的液源汽化系统，其特征在于，所述液源汽化系统还包括：
    第一流量计(80)，所述第一流量计(80)设置在所述进液管路(22)上，所述第一流量计(80)用于控制所述液态工艺介质的流量；
    第一旁通管路(90)，所述第一旁通管路(90)的进口端与所述进液管路(22)连通，所述第一旁通管路(90)的进口端位于所述第一流量计(80)与所述汽化器(21)之间，所述第一旁通管路(90)的出口端与所述尾气处 理管路(62)连通；
    旁通控制单元(100)，所述旁通控制单元(100)用于选择性地控制所述第一流量计(80)与所述汽化室连通或者所述第一流量计(80)与所述第一旁通管路(90)连通。
  10. 根据权利要求9所述的液源汽化系统，其特征在于，
    所述液源汽化系统具有工作状态和第三清洁状态；
    在所述工作状态，所述第一控制单元(50)控制所述液源管路(10)与所述进液管路(22)连通，所述旁通控制单元(100)控制所述第一流量计(80)与所述汽化室连通，所述第二控制单元(70)控制所述输出管路(30)与所述出气管路(23)连通；
    在所述第三清洁状态，所述第一控制单元(50)控制所述吹扫管路(40)与所述进液管路(22)连通，所述旁通控制单元(100)控制所述第一流量计(80)与所述第一旁通管路(90)连通。
  11. 根据权利要求9所述的液源汽化系统，其特征在于，所述旁通控制单元(100)包括第一旁通阀(101)和第二旁通阀(102)，所述第一旁通阀(101)设置在所述第一旁通管路(90)上，用于控制所述第一旁通管路(90)的通断；所述第二旁通阀(102)设置在所述进液管路(22)上，且位于所述第一旁通管路(90)的进口端与所述汽化器(21)之间，用于控制所述进液管路(22)的通断。
  12. 根据权利要求6所述的液源汽化系统，其特征在于，所述液源汽化系统还包括：
    第一流量计(80)，所述第一流量计(80)设置在所述进液管路(22)上，所述第一流量计(80)用于控制所述液态工艺介质的流量；
    第二旁通管路(110)，所述第二旁通管路(110)的进口端与吹扫气源 连通，所述第二旁通管路(110)的出口端与所述进液管路(22)连通，所述第二旁通管路(110)的出口端位于所述第一流量计(80)与所述汽化室之间；
    第五控制阀(120)，所述第五控制阀(120)设置在所述第二旁通管路(110)上，用于控制所述第二旁通管路(110)的通断。
  13. 根据权利要求12所述的液源汽化系统，其特征在于，
    在所述工作状态，所述载气控制阀(25)打开，所述第五控制阀(120)关闭；
    所述液源汽化系统还具有第四清洁状态；
    在所述第四清洁状态，所述第一控制单元(50)控制所述液源管路(10)和所述吹扫管路(40)与所述进液管路(22)断开，所述载气控制阀(25)、所述第五控制阀(120)打开，所述第二控制单元(70)控制所述尾气处理管路(62)与所述出气管路(23)连通。
  14. 根据权利要求4所述的液源汽化系统，其特征在于，所述液源汽化系统还包括：
    残液收集器(131)，所述残液收集器(131)用于回收残余的液态工艺介质；
    残液回收管路(132)，所述残液回收管路(132)的出口端与所述残液收集器(131)连通，所述残液回收管路(132)的进口端与所述进液管路(22)连通；
    第六控制阀(133)，所述第六控制阀(133)设置在所述残液回收管路(132)上，用于控制所述残液回收管路(132)的通断；
    所述汽化装置(20)还包括：
    第七控制阀(26)，所述第七控制阀(26)设置在所述进液管路(22) 上，所述第七控制阀(26)位于所述残液回收管路(132)的进口端与所述汽化器(21)之间，用于控制所述汽化器(21)与所述进液管路(22)之间的通断。
  15. 根据权利要求14所述的液源汽化系统，其特征在于，所述液源汽化系统还包括：
    排气管路(134)，所述残液收集器(131)具有排气口，所述排气口通过所述排气管路(134)与所述尾气处理管路(62)连通；
    第八控制阀(135)，所述第八控制阀(135)置在所述排气管路(134)上，用于控制所述排气管路(134)的通断。
  16. 根据权利要求15所述的液源汽化系统，其特征在于，
    在所述工作状态，所述第七控制阀(26)打开，所述第六控制阀(133)关闭；
    所述液源汽化系统还具有第一残液回收状态，在所述第一残液回收状态，所述第一控制单元(50)控制所述吹扫管路(40)与所述进液管路(22)连通，所述第七控制阀(26)关闭，所述第六控制阀(133)、所述第八控制阀(135)打开。
  17. 根据权利要求15所述的液源汽化系统，其特征在于，所述液源汽化系统还包括：
    第九控制阀(136)，所述第九控制阀(136)设置在所述残液回收管路(132)上，所述第九控制阀(136)位于所述第六控制阀(133)与所述残液回收管路(132)的出口端之间；
    吹扫支路(140)，所述吹扫支路(140)的进口端与吹扫气源连通，所述吹扫支路(140)的出口端与所述残液回收管路(132)连通，所述吹扫支路(140)的出口端位于所述第九控制阀(136)与所述第六控制阀(133) 之间；
    第十控制阀(150)，所述第十控制阀(150)设置在所述吹扫支路(140)上，用于控制所述吹扫支路(140)的通断。
  18. 根据权利要求17所述的液源汽化系统，其特征在于，
    在所述工作状态，所述第六控制阀(133)、所述第十控制阀(150)关闭，所述第七控制阀打(26)打开；
    所述液源汽化系统还具有第二残液回收状态，在所述第二残液回收状态，所述第一控制单元(50)控制所述液源管路(10)和所述吹扫管路(40)与所述进液管路(22)断开，所述第六控制阀(133)关闭，所述第十控制阀(150)、所述第九控制阀(136)、所述第八控制阀(135)打开。
  19. 根据权利要求18所述的液源汽化系统，其特征在于，所述液源汽化系统还包括：
    余气排出管路(137)，所述余气排出管路(137)的进口端与所述残液回收管路(132)连通，所述余气排出管路(137)的进口端位于所述第六控制阀(133)与所述第九控制阀(136)之间，所述余气排出管路(137)的出口端与所述尾气处理管路(62)连通；
    余气控制阀(138)，所述余气控制阀(138)设置在所述余气排出管路(137)上，用于控制所述余气排出管路(137)的通断。
  20. 根据权利要求19所述的液源汽化系统，其特征在于，
    所述液源汽化系统还具有管路余气排出状态；
    在所述管路余气排出状态，所述第一控制单元(50)控制所述吹扫管路(40)与所述进液管路(22)连通，所述第十控制阀(150)、所述第九控制阀(136)、所述第七控制阀(26)关闭；所述第六控制阀(133)、所述余气控制阀(138)打开。
  21. 根据权利要求19所述的液源汽化系统，其特征在于，所述汽化装置(20)还包括：
    载气管路(24)，所述载气管路(24)进口端用于与载气源连通，所述载气管路(24)出口端与所述汽化室连通；
    载气控制阀(25)，所述载气控制阀(25)设置在所述载气管路(24)上，所述载气控制阀(25)用于控制所述载气管路(24)的通断；
    第一流量计(80)，所述第一流量计(80)设置在所述进液管路(22)上，所述第一流量计(80)用于计算所述液态工艺介质的流量；
    第二旁通管路(110)，所述第二旁通管路(110)的进口端与所述吹扫气源连通，所述第二旁通管路(110)的出口端与所述进液管路(22)连通，所述第二旁通管路(110)的出口端位于所述第一流量计(80)与所述汽化室之间；
    第五控制阀(120)，所述第五控制阀(120)设置在所述第二旁通管路(110)上，用于控制所述第二旁通管路(110)的通断。
  22. 根据权利要求21所述的液源汽化系统，其特征在于，
    在所述工作状态，所述载气控制阀(25)打开，所述第五控制阀(120)关闭；或者
    在所述第一清洁状态，所述第七控制阀(26)打开，所述载气控制阀(25)、所述第五控制阀(120)、所述第六控制阀(133)和所述第十控制阀(150)关闭；或者
    所述液源汽化系统还具有第二清洁状态；
    在所述第二清洁状态，所述第一控制单元(50)控制所述吹扫管路(40)与所述进液管路(22)连通，所述第五控制阀(120)、所述第六控制阀(133)和所述第十控制阀(150)关闭，所述第七控制阀(26)打开；或者
    所述液源汽化系统还具有第四清洁状态；
    在所述第四清洁状态，所述第一控制单元(50)控制所述液源管路(10)和所述吹扫管路(40)与所述进液管路(22)断开，所述第十控制阀(150)、所述第六控制阀(133)关闭，所述载气控制阀(25)、所述第五控制阀(120)打开，所述第二控制单元(70)控制所述尾气处理管路(62)与所述出气管路(23)连通；或者
    所述液源汽化系统还具有第一残液回收状态；
    在所述第一残液回收状态，所述第五控制阀(120)、所述第十控制阀(150)关闭；或者
    在所述第二残液回收状态，所述第五控制阀(120)、所述余气控制阀(138)关闭；或者
    所述液源汽化系统还具有管路余气排出状态；
    在所述管路余气排出状态，所述第一控制单元(50)控制所述吹扫管路(40)与所述进液管路(22)连通，所述第五控制阀(120)、所述第十控制阀(150)、所述第九控制阀(136)、所述第七控制阀(26)关闭；所述第六控制阀(133)、所述余气控制阀(138)打开。
PCT/CN2024/105120 2023-07-14 2024-07-12 液源汽化系统 Pending WO2025016299A1 (zh)

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CN116658807A (zh) * 2023-07-14 2023-08-29 北京北方华创微电子装备有限公司 液源汽化系统

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US5950646A (en) * 1997-01-08 1999-09-14 Ebara Corporation Vapor feed supply system
KR19990079279A (ko) * 1998-04-03 1999-11-05 황철주 액체 운반 시스템
US20030049933A1 (en) * 2001-09-07 2003-03-13 Applied Materials, Inc. Apparatus for handling liquid precursor material for semiconductor processing
KR100666877B1 (ko) * 2005-12-30 2007-01-10 주식회사 아이피에스 박막증착장치용 직접액체분사시스템
JP2011082196A (ja) * 2009-10-02 2011-04-21 Hitachi Kokusai Electric Inc 気化器、基板処理装置及び半導体装置の製造方法
CN116006893A (zh) * 2022-12-23 2023-04-25 北京北方华创微电子装备有限公司 半导体工艺设备的自动补液装置及其排空方法
CN116658807A (zh) * 2023-07-14 2023-08-29 北京北方华创微电子装备有限公司 液源汽化系统

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