Classifications

• • G—PHYSICS
  • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
  • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
  • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
• • G—PHYSICS
  • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
  • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
  • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
  • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
• • G—PHYSICS
  • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
  • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
  • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
  • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
  • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes

Definitions

• This disclosure relates to an optical device.
• Patent Document 1 Various micro-light-emitting devices have been proposed so far (see, for example, Patent Document 1).
• the optical device includes an optical element array layer in which a plurality of light emitting elements or light receiving elements are arranged as optical elements, and a drive substrate including a drive circuit for driving the optical elements.
• the optical device further includes a light control array layer in which a plurality of light control units are arranged, capable of controlling light emitted from the light emitting elements and outputting it to the outside, or controlling light incident from the outside and outputting it to the light receiving elements.
• the optical elements and light control units are arranged in positions facing each other.
• the optical element array layer and the light control array layer are bonded to each other.
• the laminate formed by the optical element array layer and the light control array layer has a metal layer at the boundary between two adjacent pixels when the opposing optical elements and light control units are pixels.
• the metal layer is provided in a layer between the optical elements and the light control units, including the bonding surfaces of the element array layer and the light control array layer.
• a metal layer is provided in a layer between the optical element and the optical control unit, which is a boundary portion between two adjacent pixels and includes the bonding surface of the optical element array layer and the optical control array layer.
• the method for manufacturing an optical device includes the following three steps. (1) Preparing an optical element array layer in which a plurality of light-emitting elements or light-receiving elements are arranged as optical elements, and a first metal layer is provided at the boundary between two adjacent optical elements. (2) Preparing an optical control array layer in which a plurality of light control units capable of controlling light emitted from the light-emitting elements and outputting it to the outside, or controlling light incident from the outside and outputting it to the light-receiving elements, are arranged, and a second metal layer is provided at the boundary between two adjacent optical elements.
• the optical element array layer and the optical control array layer are bonded together so that the first metal layer provided at the boundary between two adjacent optical elements and the second metal layer provided at the boundary between two adjacent optical elements face each other.
• the metal layer suppresses leakage of the light emitted from the light-emitting element to adjacent pixels.
• a portion of the light incident from the outside is reflected by the metal layer, and the metal layer suppresses leakage of the light incident from the outside to adjacent pixels.
• FIG. 1 is a diagram illustrating an example of a cross-sectional configuration of a light emitting device according to a first embodiment of the present disclosure.
• FIG. 2 is a diagram showing an example of a cross-sectional configuration of the light emitting element of FIG. 1 and its vicinity.
• FIG. 3 is a diagram showing an example of a cross-sectional configuration taken along the line AA in FIG.
• FIG. 4 is a diagram showing an example of a cross-sectional configuration when the electrode layers and insulating layers in FIG. 3 are omitted.
• FIG. 5 is a diagram showing an example of a cross-sectional configuration taken along the line BB of FIG.
• FIG. 6 is a diagram showing an example of a cross-sectional configuration when the insulating layer in FIG. 5 is omitted.
• FIG. 7A is a diagram illustrating an example of a cross-sectional configuration for explaining an example of a manufacturing process for the light emitting device of FIG.
• FIG. 7B is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7A.
• FIG. 7C is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7B.
• FIG. 7D is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7C.
• FIG. 7E is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7D.
• FIG. 7F is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG.
• FIG. 7G is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7F.
• FIG. 7H is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7G.
• FIG. 7I is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7H.
• FIG. 7J is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7I.
• FIG. 7K is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7J.
• FIG. 7L is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7K.
• FIG. 7M is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7L.
• FIG. 7N is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7M.
• FIG. 7O is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7N.
• FIG. 7P is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7O.
• FIG. 7Q is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7P.
• FIG. 7R is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7Q.
• FIG. 7S is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7R.
• FIG. 7T is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG.
• FIG. 7U is a diagram illustrating an example of a cross-sectional configuration in a step subsequent to FIG. 7U.
• FIG. 8 is a diagram showing an example of a planar layout of a plurality of pixels in the light emitting device of FIG.
• FIG. 9 is a diagram showing a modification of the cross-sectional structure of the light emitting device of FIG.
• FIG. 10 is a diagram showing a modification of the cross-sectional structure of the light emitting device of FIG. FIG.
• FIG. 11 is a diagram showing a modification of the cross-sectional configuration of the light-emitting element in FIG. 2 and its vicinity.
• FIG. 12 is a diagram showing a modification of the cross-sectional configuration of the light-emitting element in FIG. 2 and its vicinity.
• FIG. 13 is a diagram showing a modification of the cross-sectional structure of the light emitting device of FIG.
• FIG. 14 is a diagram showing a modified example of the cross-sectional configuration taken along the line AA in FIG.
• FIG. 15 is a diagram showing an example of a cross-sectional configuration when the electrode layers and insulating layers in FIG. 14 are omitted.
• FIG. 16 is a diagram showing a modified example of the cross-sectional configuration as seen in the direction of the arrows BB in FIG.
• FIG. 17 is a diagram showing an example of a cross-sectional configuration when the insulating layer in FIG. 16 is omitted.
• FIG. 18 is a diagram showing a modification of the cross-sectional structure of the light emitting device of FIG.
• FIG. 19 is a diagram showing a modification of the planar layout of a plurality of pixels in the light emitting device of FIG.
• FIG. 20 is a diagram illustrating an example of a cross-sectional configuration of a light receiving device according to a second embodiment of the present disclosure.
• multiple components having substantially the same or similar functional configurations may be distinguished by adding different numbers after the same reference symbol. However, if there is no particular need to distinguish between multiple components having substantially the same or similar functional configurations, only the same reference symbol will be used.
• similar components in different embodiments may be distinguished by adding different letters after the same reference symbol. However, if there is no particular need to distinguish between similar components, only the same reference symbol will be used.
• the drawings referred to in the following description are intended to facilitate the explanation and understanding of one embodiment of the present disclosure, and for the sake of clarity, the shapes, dimensions, ratios, etc. shown in the drawings may differ from the actual ones.
• the light-emitting device shown in the drawings may be appropriately redesigned in consideration of the following explanation and known technologies.
• the up-down direction of the layered structure of the light-emitting device corresponds to the relative direction when the incident surface through which light enters the light-emitting device is considered to be on top, and may differ from the up-down direction according to the actual gravitational acceleration.
• expressions related to size and shape do not only mean values identical to mathematically defined numerical values or geometrically defined shapes, but also include cases where there are industrially acceptable differences in the manufacturing process of the light-emitting device, or shapes similar to those shapes.
• connection means electrical connection between multiple elements.
• connection includes not only cases where multiple elements are directly and electrically connected, but also cases where elements are indirectly and electrically connected via other elements.
• FIG. 1 shows an example of a cross-sectional configuration of the light emitting device 1 according to the first embodiment of the present disclosure.
• Fig. 2 shows an enlarged cross-sectional configuration example of a part (a light emitting element 11 described below and its vicinity) of the light emitting device 1 shown in Fig. 1.
• the light emitting device 1 includes a display section 100A in which a plurality of pixels (e.g., red pixels Pr, green pixels Pg, and blue pixels Pb) are arranged in a two-dimensional array, and a frame section 100B provided around the display section 100A.
• the light emitting device 1 includes, for example, a light emitting section 10 and a wavelength conversion section 20 laminated in this order on a driving substrate 30.
• the portion where the light emitting section 10 and the wavelength conversion section 20 are bonded to each other is a bonding surface BI1
• the portion where the light emitting section 10 and the driving substrate 30 are bonded to each other is a bonding surface BI2.
• the outermost surface of the wavelength conversion section 20 is a light emission surface S1.
• the plurality of pixels are arranged in a two-dimensional array in a plan view, for example, in a matrix or honeycomb shape.
• planar view refers to a plane having a normal in the stacking direction of the light emitting device 1, viewed from the stacking direction of the light emitting device 1.
• the light emitting section 10 corresponds to a specific example of an "optical element array layer” according to an embodiment of the present disclosure.
• the wavelength conversion section 20 corresponds to a specific example of an "optical control array layer” according to an embodiment of the present disclosure.
• the driving substrate 30 corresponds to a specific example of a “driving substrate” according to an embodiment of the present disclosure.
• the bonding surface BI2 corresponds to a specific example of a “bonding surface” according to an embodiment of the present disclosure.
• the laminate formed by the light emitting section 10 and the wavelength conversion section 20 corresponds to a specific example of a "laminate" according to an embodiment of the present disclosure.
• the light-emitting element 11 includes an active layer 112, an n-type compound semiconductor layer 111, and a p-type compound semiconductor layer 113 sandwiching the active layer 112, as shown in FIG. 2, for example.
• the light-emitting element 11 is a mesa-shaped light-emitting element having the compound semiconductor layer 113 at its top.
• the mesa-shaped portion of the light-emitting element 11 is referred to as a mesa portion.
• the light-emitting element 11 is configured to emit emitted light in the upward direction of the drawing (i.e., toward the wavelength conversion unit 20) by light reflection by the adjacent reflective layer 115.
• the top of the mesa portion faces downward in the drawing (i.e., toward the drive substrate 30), as shown in FIG. 1 and FIG. 2, for example.
• the mesa portion has a forward tapered side surface with respect to the electrode layer 13 described below.
• the angle of the side surface of the mesa portion is, for example, 45° or more and less than 90°. Note that the side surface of the mesa portion may be perpendicular to the electrode layer 13 described below, for example.
• the light-emitting element 11 (active layer 112, compound semiconductor layer 111, and compound semiconductor layer 113) is, for example, a GaN-based compound semiconductor.
• GaN-based compound semiconductors include GaN, AlGaN, InGaN, and AlInGaN.
• the active layer 112 is capable of emitting light in the blue region with an emission wavelength of 430 nm or more and 500 nm or less.
• the active layer 112 may be capable of emitting light in the ultraviolet region with an emission wavelength of 350 nm or more and 430 nm or less.
• the active layer 112 has, for example, a bulk structure, a single quantum well structure, or a quantum well structure.
• the light-emitting section 10 has an electrode layer 114 and a plug 12a for each pixel.
• the electrode layer 114 is disposed on the top of the mesa section (compound semiconductor layer 113).
• the electrode layer 114 is in contact with the top of the mesa section (compound semiconductor layer 113) and is electrically connected to the top of the mesa section (compound semiconductor layer 113).
• the plug 12a is a contact plug disposed in a position facing the electrode layer 114. One end of the plug 12a is in contact with the electrode layer 114.
• the plug 12a is electrically connected to the electrode layer 114 and is electrically connected to the compound semiconductor layer 113 via the electrode layer 114.
• the other end of the plug 12a is in contact with the extraction electrode 16 described below.
• the plug 12a is electrically connected to the extraction electrode 16 and is electrically connected to the drive substrate 30 via the extraction electrode 16.
• the electrode layer 114 is a transparent conductive layer that is transparent to the light emitted from the light-
• the light-emitting section 10 further has an electrode layer 13 shared by multiple pixels.
• the electrode layer 13 is disposed at the bottom of the mesa section (compound semiconductor layer 111).
• the electrode layer 13 is in contact with the bottom of the mesa section (compound semiconductor layer 111) and is electrically connected to the bottom of the mesa section (compound semiconductor layer 111).
• the electrode layer 13 is a transparent conductive layer that is transparent to the light emitted from the light-emitting element 11.
• the electrode layer 13 extends to the frame section 100B.
• the electrode layers 114 and 13 are made of, for example, an indium-based transparent conductive material, a tin-based transparent conductive material, or a zinc-based transparent conductive material.
• indium-based transparent conductive materials include indium-tin oxide (ITO, indium tin oxide, including Sn-doped In 2 O 3 , crystalline ITO, and amorphous ITO), indium-zinc oxide (IZO, indium zinc oxide), indium-gallium oxide (IGO), indium-doped gallium-zinc oxide (IGZO, In-GaZnO 4 ), IFO (F-doped In 2 O 3 ), ITiO (Ti-doped In 2 O 3 ), InSn, and InSnZnO.
• ITO indium-tin oxide
• ITO indium-tin oxide
• IZO indium zinc oxide
• IGO indium-gallium oxide
• IGZO indium-doped gallium-zinc oxide
• Examples of tin-based transparent conductive materials include tin oxide ( SnO2 ), ATO (Sb-doped SnO2 ), and FTO (F-doped SnO2 ).
• Examples of zinc-based transparent conductive materials include zinc oxide (including ZnO, Al-doped ZnO (AZO), and B-doped ZnO), gallium-doped zinc oxide (GZO), and AlMgZnO (aluminum oxide and magnesium oxide-doped zinc oxide).
• the electrode layers 114 and 13 may be, for example, a single layer made of the above-mentioned materials, or a laminated film selected from the above-mentioned materials.
• the plug 12a is embedded in the insulating layer 12 together with the light emitting element 11.
• the plug 12a is composed of, for example, a columnar metal member formed to fill a trench formed in the insulating layer 12.
• the insulating layer 12 is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).
• the plug 12a is composed of, for example, a metal or metal compound mainly composed of Ti, W, Al, Ni, Ta, Cu, Ag, or Au.
• the plug 12a is formed by, for example, CVD (Chemical Vapor Deposition) or ALD (Atomic Layer Deposition).
• the plug 12a may be, for example, a single layer composed of the above-mentioned materials, or a laminated film selected from the above-mentioned materials.
• the light-emitting section 10 further has a reflective layer 115 at a location facing the multiple light-emitting elements 11.
• the reflective layer 115 is disposed on the upper surface of the mesa section at a location that is not in contact with the plug 12a and at a position facing the side of the mesa section.
• the reflective layer 115 is formed so as to cover the light-emitting element 11 from the location of the top of the light-emitting element 11 (mesa section) that is not in contact with the plug 12a to the side of the light-emitting element 11 (mesa section).
• the reflective layer 115 is, for example, an electrically floating layer that is not in contact with the electrode layers 114, 13.
• the light-emitting section 10 further has an insulating layer 14a and a light-shielding layer 14b in contact with the surface of the electrode layer 13 on the wavelength conversion section 20 side.
• the insulating layer 14a corresponds to a specific example of a "metal layer” and a "first insulating layer” according to an embodiment of the present disclosure.
• the light-shielding layer 14b corresponds to a specific example of a "metal layer” and a "first metal layer” according to an embodiment of the present disclosure.
• the light-shielding layer 14b is provided in a layer between the light-emitting element 11 and the wavelength conversion layer 21 described below, which is a boundary portion between two adjacent pixels and includes the bonding surface BI1 of the light-emitting section 10 and the wavelength conversion section 20, as shown in Figures 1 and 2, for example.
• the light-shielding layer 14b is composed of a metal or an alloy containing, for example, Cu, Au, Al, or In.
• the insulating layer 14a is provided in a position not facing the light-shielding layer 14b on the bonding surface BI1, as shown in Figures 1 and 2, for example.
• the insulating layer 14a is composed of, for example, an oxide layer (e.g., a silicon oxide (SiO) layer), a nitride layer (e.g., a silicon nitride (SiN) layer), or a laminate of an oxide layer and a nitride layer (e.g., a laminate of a silicon oxide (SiO) layer and a silicon nitride (SiN) layer).
• the surfaces of the insulating layer 14a and the light-shielding layer 14b are disposed in the same plane.
• the surfaces including the surfaces of the insulating layer 14a and the light-shielding layer 14b constitute the bonding surface BI1, and the bonding surface BI1 is a flat surface.
• the light-shielding layer 14b is arranged so as to completely (i.e., continuously, without breaks) surround one pixel in plan view, for example, as shown in Figures 3 and 4.
• Figure 3 shows an example of the cross-sectional configuration as viewed from the direction of the arrows A-A in Figure 2.
• Figure 4 shows an example of the cross-sectional configuration when the electrode layer 13 and insulating layer 14a are omitted from Figure 3.
• the light-shielding layer 14b is shared by multiple pixels, and is arranged so as to completely surround the insulating layer 14a in each pixel in plan view.
• the light-emitting section 10 further has a wiring layer 15.
• the wiring layer 15 is disposed between the multiple light-emitting elements 11 and the drive substrate 30.
• the wiring layer 15 includes an interlayer insulating film 15a and wiring 15b provided within the interlayer insulating film 15a.
• the wiring layer 15 further has, for each pixel, an extraction electrode 16 that is exposed on the surface of the interlayer insulating film 15a facing the light-emitting elements 11.
• the extraction electrode 16 is connected to a plug 12a.
• the wiring layer 15 further has pad electrodes 18, 19 exposed on the surface of the interlayer insulating film 15a facing the drive substrate 30, and a wiring layer 17 exposed on the surface of the interlayer insulating film 15a facing the light emitting element 11.
• the wiring layer 15 has a pad electrode 18 for each pixel.
• the wiring 15b has, for example, a wiring that connects the extraction electrode 16 and the pad electrode 18 for each pixel.
• the wiring 15b further has, for example, a wiring that connects the wiring layer 17 and the pad electrode 19.
• the wiring 15b, the extraction electrode 16, and the wiring layer 17 are made of, for example, a metal or metal compound mainly composed of Ti, W, Al, Ni, Ta, Cu, Ag, or Au.
• the pad electrodes 18, 19 are made of, for example, Cu.
• the wavelength conversion unit 20 is laminated on the light emission side of the light emitting unit 10.
• the wavelength conversion unit 20 has a plurality of wavelength conversion layers 21R, 21G, 21B arranged two-dimensionally.
• the plurality of wavelength conversion layers 21R, 21G, 21B are provided for each pixel, one at a time, at a location facing each light emitting element 11.
• the wavelength conversion unit 20 has an insulating layer 22 with an opening (opening H4 described later) provided at a location facing each light emitting element 11, and a plurality of wavelength conversion layers 21R, 21G, 21B are provided in each opening (opening H4) of the insulating layer 22, one at a time.
• each opening (opening H4) of the insulating layer 22 is in contact with the wavelength conversion layers 21R, 21G, 21B.
• a protective layer 25 is provided on the light emission surface S1 side of the insulating layer 22, and an on-chip lens layer 26 is provided on the protective layer 25.
• the insulating layer 22 and the protective layer 25 are formed of, for example, SiO, SiN, SiON, TiO, AlO, TaO, SiOC, or SiOCN.
• the region including the wavelength conversion layer 21R and the light emitting element 11 that face each other in a planar view is the red pixel Pr.
• the region including the wavelength conversion layer 21G and the light emitting element 11 that face each other in a planar view is the green pixel Pg
• the region including the wavelength conversion layer 21B and the light emitting element 11 that face each other in a planar view is the blue pixel Pb.
• the wavelength conversion unit 20 has a reflective layer 23.
• the reflective layer 23 is provided at the boundary between adjacent pixels, for example, as shown in Figures 1 and 2.
• the reflective layer 23 is provided at a position in contact with the side surface of each opening (opening H4) of the insulating layer 22.
• the reflective layer 23 is intended to suppress color mixing due to light leakage between the pixels (red pixel Pr, green pixel Pg, and blue pixel Pb).
• the reflective layer 23 has, for example, a honeycomb structure (see Figure 6 described below).
• the lower end of the reflective layer 23 is in contact with, for example, the insulating layer 24a described below.
• the upper end (top) of the reflective layer 23 is in contact with, for example, the protective layer 25, and is wider than the lower end of the reflective layer 23.
• the reflective layer 23 may have, for example, a lattice structure.
• the reflective layer 23 is for efficiently extracting the colored light emitted from the light emitting element 11 and converted in each wavelength conversion layer 21R, 21G, 21B from the light emission surface S1.
• the reflective layer 23 is provided at a position in contact with the side surface of each wavelength conversion layer 21R, 21G, 21B.
• the reflective layer 23 is configured to be capable of reflecting the light emitted from the light emitting element 11 and the light generated by wavelength conversion in each wavelength conversion layer 21R, 21G, 21B.
• the reflective layer 23 is made of a metal material having optical reflectivity. Examples of the metal material forming the reflective layer 23 include metals having high reflectivity in the visible light region. Specific examples of the material include metals or alloys containing Ag, Al, Cu, Au, Pt, or Rh.
• the wavelength conversion layer 21 is capable of converting the light emitted from the multiple light-emitting elements 11 into a desired wavelength (e.g., red (R), green (G), blue (B)) and emitting it.
• the red pixel Pr is provided with a red wavelength conversion layer 21R that converts the light emitted from the light-emitting elements 11 into light in the red band (red light)
• the green pixel Pg is provided with a green wavelength conversion layer 21G that converts the light emitted from the light-emitting elements 11 into light in the green band (green light)
• the blue pixel Pb is provided with a blue wavelength conversion layer 21B that converts the light emitted from the light-emitting elements 11 into light in the blue band (blue light).
• Each of the wavelength conversion layers 21R, 21G, and 21B can be formed using quantum dots corresponding to each color.
• the quantum dots can be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, or CdTe.
• the quantum dots can be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, or CdSeS.
• the quantum dots can be selected from, for example, ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, and CdSeS.
• the blue wavelength conversion layer 23B may be formed from a resin layer having optical transparency.
• the protective layer 25 is for protecting the surface of the light emitting device 1 and is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).
• a wavelength selection layer may be provided within the protective layer 25 across the red pixel Pr and the green pixel Pg.
• the wavelength selection layer selectively reflects, for example, light in the blue band (blue light), thereby improving the color purity of the red light and green light extracted from the red pixel Pr and the green pixel Pg, respectively.
• the on-chip lens layer 26 is provided so as to cover the entire surfaces of the display unit 100A and the frame unit 100B.
• the on-chip lens layer 26 is made of a light-transmitting material, and is made of, for example, a single layer film made of any of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiCN), etc., or a laminated film made of two or more of these materials.
• the wavelength conversion section 20 further has an insulating layer 24a and a light-shielding layer 24b in contact with the surfaces of the wavelength conversion layer 21, the insulating layer 22, and the reflective layer 23 on the light-emitting section 10 side.
• the insulating layer 24a corresponds to a specific example of a "metal layer” and a “second insulating layer” according to an embodiment of the present disclosure.
• the light-shielding layer 24b corresponds to a specific example of a "metal layer” and a "second metal layer” according to an embodiment of the present disclosure.
• the light-shielding layer 24b is provided in a layer between the light-emitting element 11 and the wavelength conversion layer 21, which is a boundary portion between two adjacent pixels and includes the bonding surface BI1 of the light-emitting section 10 and the wavelength conversion section 20, as shown in FIG. 1 and FIG. 2, for example.
• the light-shielding layer 24b is in contact with the surfaces of the insulating layer 22 and the reflective layer 23 on the light-emitting section 10 side, and is further in contact with the surface of the light-shielding layer 14b of the light-emitting section 10.
• the light-shielding layer 24b is composed of a metal or alloy containing, for example, Cu, Au, Al, or In.
• the insulating layer 24a is provided at a position not facing the light-shielding layer 24b on the bonding surface BI1, as shown in, for example, FIG. 1 and FIG. 2.
• the insulating layer 24a is in contact with the surface of the wavelength conversion layer 21 on the light-emitting section 10 side, and is also in contact with the surface of the insulating layer 14a of the light-emitting section 10.
• the insulating layer 24a is composed of, for example, an oxide layer (e.g., a silicon oxide (SiO) layer), a nitride layer (e.g., a silicon nitride (SiN) layer), or a laminate of an oxide layer and a nitride layer (e.g., a laminate of a silicon oxide (SiO) layer and a silicon nitride (SiN) layer).
• the material of the insulating layer 14a and the material of the insulating layer 24a may be the same as each other or may be different from each other.
• the material of the light-shielding layer 14b and the material of the light-shielding layer 24b may be the same as each other or may be different from each other.
• the respective surfaces of the insulating layer 24a and the light-shielding layer 24b are disposed in the same plane.
• the surface including the respective surfaces of the insulating layer 24a and the light-shielding layer 24b constitutes the bonding surface BI1, which is a flat surface.
• the light-shielding layer 14b of the light-emitting unit 10 and the light-shielding layer 24b of the wavelength conversion unit 20 are bonded to each other at the bonding surface BI1.
• the insulating layer 14a of the light-emitting unit 10 and the insulating layer 24a of the wavelength conversion unit 20 are bonded to each other at the bonding surface BI1.
• the light-shielding layer 24b is provided so as to completely (i.e., continuously, without breaks) surround one pixel in plan view.
• Figure 5 shows an example of the cross-sectional configuration as viewed from the direction of the arrows B-B in Figure 2.
• Figure 6 shows an example of the cross-sectional configuration when the insulating layer 24a in Figure 5 is omitted.
• the light-shielding layer 24b is shared by multiple pixels, and is provided so as to completely surround the insulating layer 24a in each pixel in plan view.
• the frame part 100B has an opening H1 that penetrates the insulating layer 12 and reaches the wiring layer 17, and an opening H2 that penetrates the on-chip lens layer 26, the protective layer 25, and the insulating layer 22 and reaches the wiring layer 17.
• the wiring layer 17 exposed at the bottom of the opening H1 is used as a connection electrode with the drive circuit 32 in the drive substrate 30.
• the wiring layer 17 exposed at the bottom of the opening H2 is used as a connection electrode connected to the outside.
• a part of the light-shielding layer 14b is embedded in the opening H1 and is in contact with the wiring layer 17 exposed at the bottom of the opening H1. In other words, the opening H1 and a part of the light-shielding layer 14b form a through via.
• a part of the wiring layer 17 is embedded in the opening H2 and is in contact with the wiring layer 17 exposed at the bottom of the opening H2. In other words, the opening H2 and a part of the wiring layer 17 form a through via.
• the driving substrate 30 is provided with a driving circuit 32 that drives the multiple light-emitting elements 11 arranged in the display unit 100A.
• the driving substrate 30 is arranged in a position facing the wavelength conversion layers 21R, 21G, and 21B through the multiple light-emitting elements 11.
• the driving substrate 30 has, for example, a support substrate 31 made of silicon (Si) and a wiring layer 33 provided on the support substrate 31.
• the wiring layer 33 is provided with an interlayer insulating film 34 and vertical wirings 35 and 37 embedded in the interlayer insulating film 34.
• the vertical wiring 35 electrically connects the extraction electrode 16 and the driving circuit 32.
• the vertical wiring 37 electrically connects the pad electrode 38 and the driving circuit 32.
• the vertical wirings 35 and 37 are configured to include, for example, vias.
• the interlayer insulating film 34 is provided with pad electrodes 36 and 38 exposed on the surface on the wiring layer 15 side.
• the pad electrode 36 is in contact with the vertical wiring 35 and is joined to the pad electrode 18.
• the interlayer insulating film 34 is made of, for example, silicon oxide (SiO) or silicon nitride (SiN).
• the vertical wiring 35, 37 is made of, for example, a metal or alloy containing Cu, Al, W, or Ag.
• the pad electrodes 36, 38 are made of, for example, Cu.
• Fig. 7A shows an example of a cross-sectional configuration for explaining an example of a manufacturing process for the light emitting device 1.
• Figs. 7B to 7U show examples of cross-sectional configurations in steps subsequent to Fig. 7A.
• the compound semiconductor layer 111, the active layer 112, and the compound semiconductor layer 113 are formed by epitaxial crystal growth using, for example, a metal organic chemical vapor deposition (MOCVD) method or a molecular beam epitaxy (MBE) method on the substrate 210 as a growth substrate.
• MOCVD metal organic chemical vapor deposition
• MBE molecular beam epitaxy
• the electrode layer 114 is formed on the compound semiconductor layer 113 by, for example, a chemical vapor deposition (CVD) method.
• the electrode layer 114, the compound semiconductor layer 113, the active layer 112, and the compound semiconductor layer 111 are selectively etched by, for example, dry etching using the insulating layer as a mask, and the insulating layer is removed.
• a plurality of mesa-shaped light-emitting elements 11 are formed on the substrate 210 (FIG. 7A).
• the insulating layer 114 and the reflective layer 115 are formed along the top, side, and base of the mesa portion 12A by, for example, a CVD method (FIG. 7A).
• an insulating layer 12 is formed by, for example, CVD to embed the multiple light-emitting elements 11 (FIG. 7B), and then a trench H3 is formed at a predetermined location by, for example, dry etching (FIG. 7C).
• a plug 12a is formed by, for example, CVD to embed the trench H3 (FIG. 7D).
• a wiring layer 15 is formed on the insulating layer 12 through various processes (FIG. 7E).
• the light-emitting section 200 thus formed is bonded to the drive substrate 30 with the surface S2 of the light-emitting section 200 on the wiring layer 15 side facing the surface S3 of the drive substrate 30 (FIGS. 7F, 7G).
• the substrate 210 is removed by, for example, CMP (FIG. 7H).
• an opening H1 is formed in a predetermined location of the insulating layer 12 by, for example, dry etching, with the wiring layer 17 exposed at the bottom (FIG. 7I).
• an insulating layer 22 is formed in contact with the side surface of the opening H1 by, for example, CVD, and an electrode layer 13 is formed in contact with the surface of each light-emitting element 11 (compound semiconductor layer 111) (FIG. 7J).
• an insulating layer 14a is formed in a predetermined location by, for example, CVD (FIG. 7K).
• a light-shielding layer 14b is formed in a location not facing the insulating layer 14a by, for example, CVD (FIG. 7L).
• the light-shielding layer 14b is also formed in the opening H1, so that the light-shielding layer 14b comes into contact with the wiring layer 17 exposed at the bottom of the opening H1.
• the light-emitting section 10 is formed on the driving substrate 30.
• the surface including the surfaces of the insulating layer 14a and the light-shielding layer 14b constitutes the surface S4 of the light-emitting section 10.
• the surface S4 is generally flat.
• a plurality of recesses are formed on the surface of the substrate 110 by, for example, dry etching, and then the recesses are filled with a light-transmitting material by, for example, CVD.
• the entire surface including the on-chip lens layer 26 is planarized by, for example, CMP, and then the protective layer 25 and the insulating layer 22 are laminated in this order by, for example, CVD (FIG. 7N).
• a plurality of openings H4 are formed in the insulating layer 22 by, for example, dry etching, with the protective layer 25 exposed at the bottom (FIG. 7O).
• the wavelength conversion layer 21 (21R, 21G, 21G) is formed by, for example, CVD so as to fill the plurality of openings H4 (FIG. 7P).
• the insulating layer 24a is formed at a predetermined location on the surface including the wavelength conversion layer 21 (21R, 21G, 21G) (FIG. 7Q).
• the light-shielding layer 24b is formed at a location not facing the insulating layer 24a (FIG. 7R). In this manner, the wavelength conversion unit 100 is formed.
• the surface including each of the insulating layer 24a and the light-shielding layer 24b constitutes the surface S5 of the wavelength conversion unit 100.
• the surface S5 is a generally flat surface.
• the wavelength conversion unit 100 thus formed is bonded to the light emitting unit 10 with the surface S4 of the light emitting unit 10 and the surface S5 of the wavelength conversion unit 100 facing each other (FIGS. 7S, 7T).
• the wavelength conversion unit 100 and the light emitting unit 10 are bonded to each other with the surface S4 of the light emitting unit 10 and the surface S5 of the wavelength conversion unit 100 facing each other so that the light shielding layer 14b and the light shielding layer 24b face each other.
• the light shielding layer 14b and the light shielding layer 24b are bonded to each other, and the insulating layer 24a and the light shielding layer 24b are bonded to each other, thereby bonding the wavelength conversion unit 100 and the light emitting unit 10 to each other.
• the substrate 110 is removed, for example, by wet etching (FIG. 7U).
• an opening H2 is formed in a predetermined location of the insulating layer 22, with the wiring layer 17 exposed at its bottom surface.
• an insulating film 19 is formed by, for example, CVD, contacting the side surface of the opening H2, and the wiring layer 27 is formed in the opening H1, so that the wiring layer 27 contacts the wiring layer 17 exposed at the bottom surface of the opening H1. In this manner, the light-emitting device 1 is manufactured.
• light-shielding layers 14b, 24b are provided in the layer between the light-emitting element 11 and the wavelength conversion layer 21, which is the boundary portion between two adjacent pixels and includes the bonding surface BI1 of the light-emitting section 10 and the wavelength conversion section 20.
• the light-shielding layers 14b, 24b can suppress leakage of the light emitted from the light-emitting element 11 to adjacent pixels.
• the light-shielding layers 14b and 24b are bonded to each other at the bonding surface BI1. This allows the light-shielding layers 14b and 24b to not only suppress leakage of light emitted from the light-emitting element 11 into adjacent pixels, but also to bond the light-emitting section 10 and the wavelength conversion section 20 together.
• the insulating layer 24a and the light-shielding layer 24b are bonded to each other at the bonding surface BI1. This allows the insulating layer 24a and the light-shielding layer 24b to serve the role of bonding the light-emitting section 10 and the wavelength conversion section 20 together.
• the surfaces of the light-shielding layer 14b and the insulating layer 14a are arranged in the same plane, and in the wavelength conversion section 20, the surfaces of the light-shielding layer 24b and the insulating layer 24a are arranged in the same plane.
• the light-shielding layers 14b, 24b are provided so as to completely (i.e., continuously and without breaks) surround the pixel in a plan view.
• a portion of the light emitted from the light-emitting element 11 is reflected by the light-shielding layers 14b, 24b, and the light-shielding layers 14b, 24b can suppress leakage of the light emitted from the light-emitting element 11 to adjacent pixels.
• the light-shielding layers 14b, 24b are made of a metal or alloy containing Cu, Au, Al, or In, the light emitted from the light-emitting element 11 can be efficiently reflected by the light-shielding layers 14b, 24b. Therefore, the light-shielding layers 14b, 24b can suppress leakage of the light emitted from the light-emitting element 11 to adjacent pixels.
• the adhesion between the insulating layer 14a and the insulating layer 24a can be improved at the bonding surface BI1.
• the light-shielding layer 14b is electrically connected to each light-emitting element 11 (compound semiconductor layer 111) via the electrode layer 13 provided in the light-emitting section 10.
• the light-shielding layer 14b is further electrically connected to the drive circuit 32 via a through via (a through via formed by the opening H1 and a part of the light-shielding layer 14b) provided in the light-emitting section 10. This allows the resistance of the wiring extending from each light-emitting element 11 (compound semiconductor layer 111) to the drive circuit 32 to be reduced by the light-shielding layer 14b.
• each pixel is provided with a wavelength conversion layer 21R, a wavelength conversion layer 21G, or a wavelength conversion layer 21B.
• the light emitted from the light emitting element 11 is converted to red light by the wavelength conversion layer 21R
• the light emitted from the light emitting element 11 is converted to green light by the wavelength conversion layer 21G
• the light emitted from the light emitting element 11 is converted to blue light by the wavelength conversion layer 21B.
• a reflective layer 23 is provided that can reflect the light emitted from the light-emitting element 11 and the light generated by wavelength conversion in each of the wavelength conversion layers 21R, 21G, and 21B. This allows each color of light emitted from the light-emitting element 11 and converted in each of the wavelength conversion layers 21R, 21G, and 21B to be efficiently extracted from the light exit surface S1.
• an on-chip lens layer 26 is provided. This allows image light to be formed by the light of each color emitted from the light emission surface S1.
• Fig. 8 shows an example of a planar layout of a plurality of pixels in the light emitting device 1 of Fig. 1.
• a plurality of pixels e.g., a red pixel Pr, a green pixel Pg, and a blue pixel Pb
• a plurality of pixels may be two-dimensionally arranged in a honeycomb shape in a planar view, for example, as shown in Fig. 8.
• Fig. 9 shows a modified cross-sectional configuration of the light emitting device 1 of Fig. 1.
• each pixel may be configured to emit a common color light.
• each pixel may be configured as a red pixel Pr, for example, as shown in Fig. 9.
• FIG. 10 shows a modified example of the cross-sectional configuration of the light-emitting device 1 of FIG. 1.
• the wavelength conversion section 20 may have a wavelength conversion layer 21Bx instead of the wavelength conversion layer 21B in some pixels (blue pixels Pb) among the plurality of pixels, as shown in FIG. 10.
• the wavelength conversion layer 21Bx is made of a resin portion capable of transmitting light emitted from the light-emitting element 11.
• the wavelength conversion section 20 may have a dielectric multilayer film (DBR layer 28) capable of reflecting light (e.g., blue light or ultraviolet light) emitted from the light-emitting element 11 in the plurality of pixels (red pixels Pr and green pixels Pg) having the wavelength conversion layers 21R and 21G, as shown in FIG. 10.
• DBR layer 28 dielectric multilayer film capable of reflecting light (e.g., blue light or ultraviolet light) emitted from the light-emitting element 11 in the plurality of pixels (red pixels Pr and green pixels Pg) having the wavelength conversion layers 21R and 21G, as shown in FIG. 10.
• the color purity of the light emitted from each pixel can be increased.
• Fig. 11 shows a modified example of the cross-sectional configuration of the light-emitting element 11 and its vicinity.
• the light-emitting section 10 may have a reflective film 14c that covers the surface (side and bottom surface) of the light-shielding layer 14b, for example, as shown in Fig. 11.
• the wavelength conversion section 20 may have a reflective film 24c that covers the surface (side and top surface) of the light-shielding layer 24b, for example, as shown in Fig. 11.
• the reflective films 14c and 24c are configured to be capable of reflecting the light emitted from the light-emitting element 11 and the light generated by wavelength conversion in the wavelength conversion unit 20.
• the reflective films 14c and 24c are made of a material having a higher reflectance than the light-shielding layers 14b and 24b (the reflectance for the wavelength region (visible region) of the light emitted from the light-emitting element 11 and the light generated by wavelength conversion in the wavelength conversion unit 20).
• the reflective films 14c and 24c are made of a metal or alloy containing, for example, Al, Ag, or Rh.
• the light emitted from the light-emitting element 11 and the light generated by wavelength conversion in the wavelength conversion unit 20 are reflected by the reflective films 14c and 24c, so that the leakage of the light emitted from the light-emitting element 1 to adjacent pixels can be suppressed by the reflective films 14c and 24c.
• the reflective films 14c and 24c may be made of a dielectric multilayer film. Even in this case, for example, light emitted from the light-emitting element 11 and light generated by wavelength conversion in the wavelength conversion section 20 are reflected by the reflective films 14c and 24c, so that the reflective films 14c and 24c can suppress leakage of light emitted from the light-emitting element 1 to adjacent pixels.
• Fig. 12 shows a modified example of the cross-sectional configuration of the light-emitting element 11 and its vicinity.
• Fig. 13 shows a modified example of the cross-sectional configuration of the light-emitting device 1 of Fig. 1.
• the light-shielding layers 14b and 24b may not be in contact with the electrode layer 13 and may be electrically isolated from the electrode layer 13. Even in this case, the resistance of the wiring from each light-emitting element 11 (compound semiconductor layer 111) to the drive circuit 32 can be constituted by the electrode layer 13.
• Fig. 14 shows a modified example of the cross-sectional configuration in the direction of the arrows A-A in Fig. 2.
• Fig. 15 shows an example of the cross-sectional configuration when the electrode layer 13 and the insulating layer 14a are omitted in Fig. 14.
• Fig. 16 shows a modified example of the cross-sectional configuration in the direction of the arrows B-B in Fig. 2.
• Fig. 17 shows an example of the cross-sectional configuration when the insulating layer 24a is omitted in Fig. 16.
• the light-shielding layer 14b may be provided so as to partially surround one pixel in plan view (i.e., have a gap in one portion) as shown in, for example, Figures 14 and 15.
• the light-shielding layer 24b may be provided so as to partially surround one pixel in plan view (i.e., have a gap in one portion) as shown in, for example, Figures 16 and 17.
• Fig. 18 shows a modified example of the cross-sectional configuration in the direction of the arrows A-A in Fig. 2.
• the wavelength conversion unit 20 may have, for example, a pinhole layer 29 (light-shielding layer) in which a through hole H6 is formed on the light exit surface S1 side as shown in Fig. 18.
• image light can be formed by the light of each color exiting from the pinhole layer 29.
• Fig. 19 shows a modified example of the planar layout of a plurality of pixels in the light emitting device 1 of Fig. 1.
• the light blocking layers 14b, 24b may be provided so as to completely surround a plurality of pixels (e.g., red pixels Pr) emitting the same color of light as a group in a plan view, as shown in Fig. 19, for example.
• either the light-shielding layer 14b or the light-shielding layer 24b may be omitted.
• the insulating layer 14a may be provided at the location of the light-shielding layer 14b, and the insulating layer 14a provided at the location of the light-shielding layer 14b may be bonded to the light-shielding layer 24b.
• the insulating layer 24a may be provided at the location of the light-shielding layer 24b, and the insulating layer 24a provided at the location of the light-shielding layer 24b may be bonded to the light-shielding layer 14b.
• a natural oxide film may be formed on the surface of each of the light-shielding layers 14b and 24b prior to the manufacturing process in which the light-shielding layers 14b and 24b are bonded together. Even in such a case, since the natural oxide film itself is very thin, it is possible to bond the light-shielding layers 14b and 24b together even if a natural oxide film is formed on the surface of each of the light-shielding layers 14b and 24b. However, in this case, although a natural oxide film may remain on the bonding surface between the light-shielding layers 14b and 24b, it is possible to electrically connect the light-shielding layers 14b and 24b to each other.
• Second embodiment (3-1. Configuration of the Light Receiving Device) A light receiving device 2 according to a second embodiment of the present disclosure will be described below.
• Fig. 20 illustrates an example of a cross-sectional configuration of the light receiving device 2 according to the second embodiment of the present disclosure.
• the light receiving device 2 includes a light receiving section 200A in which a plurality of pixels (e.g., red pixels Pr, green pixels Pg, and blue pixels Pb) are arranged in a two-dimensional array, and a frame section 200B provided around the light receiving section 200A.
• the light receiving device 2 includes, for example, a light receiving section 50 and a color filter section 60 laminated in this order on a drive substrate 70.
• the portion where the light receiving section 50 and the color filter section 60 are bonded to each other is a bonding surface BI1
• the portion where the light receiving section 50 and the drive substrate 70 are bonded to each other is a bonding surface BI2.
• the outermost surface of the color filter section 60 is a light emission surface S1.
• the plurality of pixels are arranged in a two-dimensional array in a plan view, for example, in a matrix or honeycomb shape.
• planar view refers to a plane having a normal in the stacking direction of the light receiving device 2, viewed from the stacking direction of the light receiving device 2.
• the light receiving section 50 corresponds to a specific example of an "optical element array layer” according to an embodiment of the present disclosure.
• the color filter section 60 corresponds to a specific example of an "optical control array layer” according to an embodiment of the present disclosure.
• the drive substrate 70 corresponds to a specific example of a "drive substrate” according to an embodiment of the present disclosure.
• the bonding surface BI2 corresponds to a specific example of a "bonding surface” according to an embodiment of the present disclosure.
• the laminate formed by the light receiving section 50 and the color filter section 60 corresponds to a specific example of a "laminate" according to an embodiment of the present disclosure.
• the light receiving section 50 corresponds to the light receiving section 10 according to the above embodiment and its modified example, in which a light receiving element 51 is provided instead of the light emitting element 11.
• the light receiving elements 51 are arranged two-dimensionally in the light receiving section 200A.
• the light receiving element 51 corresponds to a specific example of an "optical element” and a "light receiving element” according to an embodiment of the present disclosure.
• the light receiving elements 51 are provided one for each pixel.
• the light receiving element 51 is a solid light receiving element that receives light incident from the outside through the light emitting surface S1, and is, for example, a photodiode.
• the light receiving element 51 refers to a state in which it is cut out from a wafer used for crystal growth, and is not a package type covered with molded resin or the like.
• the light receiving element 51 has a size of, for example, 5 ⁇ m to 100 ⁇ m.
• the color filter section 60 corresponds to the wavelength conversion section 20 according to the above embodiment and its modified example, in which a color filter layer 61 is provided instead of the wavelength conversion layer 21.
• the color filter layer 61 is composed of a plurality of color filter layers 61R, 61G, and 61B arranged two-dimensionally, for example, as shown in FIG. 20.
• the color filter layer 61R is provided instead of the wavelength conversion layer 21R according to the above embodiment and its modified example.
• the color filter layer 61G is provided instead of the wavelength conversion layer 21G according to the above embodiment and its modified example.
• the color filter layer 61B is provided instead of the wavelength conversion layer 21B according to the above embodiment and its modified example.
• the color filter layer 61R is made of a material that can selectively transmit light in the red band (red light) from the light that is incident from the outside through the light exit surface S1.
• the color filter layer 61G is made of a material that can selectively transmit light in the green band (green light) from the light that is incident from the outside through the light exit surface S1.
• the color filter layer 61B is made of a material that can selectively transmit light in the blue band (blue light) from the light that is incident from the outside through the light exit surface S1.
• the driving board 70 corresponds to the driving board 30 according to the above embodiment and its modified example, in which a driving circuit 72 is provided instead of the driving circuit 32.
• the driving circuit 72 is a circuit capable of driving the multiple light receiving elements 51 arranged in the light receiving section 200A.
• light-shielding layers 14b, 24b are provided in the layer between the light-receiving element 51 and the color filter section 60, which is the boundary between two adjacent pixels and includes the bonding surface BI1 of the light-receiving section 50 and the color filter section 60.
• a portion of the light incident from the outside is reflected by the light-shielding layers 14b, 24b, so that leakage of the light incident from the outside to adjacent pixels can be suppressed by the light-shielding layers 14b, 24b.
• the light-shielding layers 14b and 24b are bonded to each other at the bonding surface BI1. This allows the light-shielding layers 14b and 24b to not only suppress leakage of externally incident light into adjacent pixels, but also to bond the light-receiving section 50 and the color filter section 60 together.
• the insulating layer 24a and the light-shielding layer 24b are bonded to each other at the bonding surface BI1. This allows the insulating layer 24a and the light-shielding layer 24b to serve as bonding the light-receiving section 50 and the color filter section 60.
• the surfaces of the light blocking layer 14b and the insulating layer 14a are arranged in the same plane, and in the color filter section 60, the surfaces of the light blocking layer 24b and the insulating layer 24a are arranged in the same plane. This makes it possible to improve the adhesion between the light blocking layer 14b and the light blocking layer 24b at the bonding surface BI1, and to improve the adhesion between the insulating layer 14a and the insulating layer 24a.
• the light-shielding layers 14b and 24b are provided so as to completely (i.e., continuously and without breaks) surround the pixel in a plan view.
• a portion of the light incident from the outside is reflected by the light-shielding layers 14b and 24b, and the light-shielding layers 14b and 24b can suppress leakage of the light incident from the outside to adjacent pixels.
• the light-shielding layers 14b and 24b are made of a metal or alloy containing Cu, Au, Al, or In, the light-shielding layers 14b and 24b can efficiently reflect light incident from the outside. Therefore, the light-shielding layers 14b and 24b can suppress leakage of light incident from the outside to adjacent pixels.
• the adhesion between the insulating layer 14a and the insulating layer 24a can be improved at the bonding surface BI1.
• the light-shielding layer 14b is electrically connected to each light-receiving element 51 via an electrode layer 13 provided in the light-receiving section 50.
• the light-shielding layer 14b is further electrically connected to the drive circuit 72 via a through via (a through via formed by an opening H1 and a part of the light-shielding layer 14b) provided in the light-receiving section 50. This allows the resistance of the wiring extending from each light-receiving element 51 to the drive circuit 72 to be reduced by the light-shielding layer 14b.
• each pixel is provided with a color filter layer 61R, a color filter layer 61G, or a color filter layer 61B.
• red light contained in the light incident from the outside is selectively transmitted by the color filter layer 61R
• green light contained in the light incident from the outside is selectively transmitted by the color filter layer 61G
• blue light contained in the light incident from the outside is selectively transmitted by the color filter layer 61B.
• a reflective layer 23 is provided that can reflect light incident from the outside and light obtained by wavelength selective transmission in each of the color filter layers 61R, 61G, and 61B. This allows each light receiving element 51 to efficiently detect the light incident from the outside and the light obtained by wavelength selective transmission in each of the color filter layers 61R, 61G, and 61B.
• an on-chip lens layer 26 is provided. This allows external light to be efficiently incident on each of the color filter layers 61R, 61G, and 61B, making it possible to obtain a clear image.
• the light receiving section 50 may have, for example, a reflective film 14c that covers the surface (side and bottom surface) of the light shielding layer 14b.
• the color filter section 60 may have, for example, a reflective film 24c that covers the surface (side and top surface) of the light shielding layer 24b. This allows the reflective films 14c and 24c to suppress leakage of light incident from the outside to adjacent pixels.
• the light shielding layers 14b, 24b may not be in contact with the electrode layer 13 and may be electrically isolated from the electrode layer 13. Even in this case, the resistance of the wiring extending from each light receiving element 51 to the drive circuit 72 can be reduced by the light shielding layer 14b.
• the light shielding layer 14b may be provided, for example, so as to partially surround one pixel in a planar view (i.e., so as to have a gap in one portion).
• the light shielding layer 24b may be provided, for example, so as to partially surround one pixel in a planar view (i.e., so as to have a gap in one portion).Even in this case, for example, a portion of the light incident from the outside is reflected by the light shielding layers 14b, 24b, so that leakage of the light incident from the outside to adjacent pixels can be suppressed by the light shielding layers 14b, 24b.
• the present disclosure can also be configured as follows.
• an optical element array layer in which a plurality of light emitting elements or light receiving elements are arranged as optical elements; a driving substrate including a driving circuit for driving the optical element; a light control array layer in which a plurality of light control units are arranged, the light control unit being capable of controlling light emitted from the light-emitting element and outputting it to the outside, or controlling light incident from the outside and outputting it to the light-receiving element; the optical element and the optical control unit are disposed at positions facing each other, the optical element array layer and the optical control array layer are bonded to each other, an optical device, wherein a laminate constituted by the optical element array layer and the light control array layer has a metal layer in a layer between the optical element and the light control unit, the layer being a boundary portion between two adjacent pixels when the optical element and the light control unit facing each other are regarded as pixels, the layer including a bonding surface of the optical element array layer and the light control array layer.
• the optical element array layer has a first metal layer as the metal layer
• the light control array layer has a second metal layer as the metal layer
• the optical element array layer has a first insulating layer at a position not facing the first metal layer on the bonding surface
• the light control array layer has a second insulating layer at a position not facing the second metal layer on the bonding surface
• the optical device according to (2) wherein the first insulating layer and the second insulating layer are bonded to each other at the bonding surface.
• the first metal layer and the first insulating layer have respective surfaces disposed in the same plane;
• the metal layer is made of a metal or an alloy containing Cu, Au, Al or In.
• the metal layer has a reflective film on a surface of the metal layer, the reflective film being made of a material having a higher reflectance in the visible region than a material inside the metal layer.
• the reflective film is made of a metal or an alloy containing, for example, Al, Ag, or Rh.
• the optical device according to any one of (1) to (10), wherein the metal layer is electrically connected to each of the optical elements via wiring provided in the optical element array layer, and is electrically connected to the driving circuit via a through via provided in the optical element array layer.
• the optical control unit has a wavelength conversion layer capable of converting a wavelength of light emitted from the light-emitting element in at least one of the plurality of pixels.
• the optical device has a dielectric multilayer film capable of reflecting light emitted from the light emitting element in the plurality of pixels having the wavelength conversion layer.
• the optical control unit has a light exit surface from which light generated by wavelength conversion in the wavelength conversion layer is emitted, and has a light-shielding layer having a through hole formed on the light exit surface side.
• an optical element array layer in which a plurality of light emitting elements or light receiving elements are arranged as optical elements and a first metal layer is provided at the boundary between two adjacent optical elements; a light control array layer is provided in which a plurality of light control units are arranged, each capable of controlling light emitted from the light emitting element and outputting it to the outside, or controlling light incident from the outside and outputting it to the light receiving element, and a second metal layer is provided at the boundary between two adjacent light elements; and bonding the optical element array layer and the light control array layer to each other in a state in which the optical element and the light control unit face each other and the first metal layer and the second metal layer face each other.

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