WO2025008370A1 - Power module - Google Patents

Power module Download PDF

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Publication number
WO2025008370A1
WO2025008370A1 PCT/EP2024/068657 EP2024068657W WO2025008370A1 WO 2025008370 A1 WO2025008370 A1 WO 2025008370A1 EP 2024068657 W EP2024068657 W EP 2024068657W WO 2025008370 A1 WO2025008370 A1 WO 2025008370A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductor
connection portion
power module
conductive
connection
Prior art date
Application number
PCT/EP2024/068657
Other languages
French (fr)
Inventor
Laurent MASSOL
Gabriel KOPP
Raouaa DRIDI
Jean Luc HOUARD
Arnaud LEJUIF
Benoit Verger
Jean Michel Morelle
Original Assignee
Valeo Eautomotive Germany Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR2307117A external-priority patent/FR3150901B1/en
Application filed by Valeo Eautomotive Germany Gmbh filed Critical Valeo Eautomotive Germany Gmbh
Publication of WO2025008370A1 publication Critical patent/WO2025008370A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49531—Additional leads the additional leads being a wiring board
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37011—Shape comprising apertures or cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/40227—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto

Definitions

  • the present invention relates to a power module.
  • the power module implementing a switching arm with a high-side switch formed of several transistors, called high-side, and a low-side switch also formed of several transistors, called low-side.
  • the transistors on each side are distributed on two parallel rows deposited on a substrate.
  • the power module further comprises a control circuit with two parts, spaced apart from each other, for controlling respectively the high-side transistors and the low-side transistors.
  • Each of the two parts comprises pins projecting upwards or downwards to be connected to drivers.
  • connection between the rows of transistors and the terminals of the power module is made using conductive tracks on the substrate.
  • connection tracks require the transistors to be brought closer together on the substrate. Typically, a maximum distance of 1 mm to 1.6 mm is obtained between two transistors. This small distance induces thermal coupling between the different components, and increases the thermal impedance of the entire power module.
  • connection tracks placed on the same plane as the transistors requires separating a switch formed by several transistors into two groups of transistors in order to allow the passage of connection tracks.
  • This Separation into groups of transistors implies an imbalance in the current passing through these groups of transistors, which harms the efficiency of the power module.
  • the invention relates to a power module comprising:
  • a first conductor comprising a connection portion, at least one terminal, and at least one link portion
  • a second conductor comprising a connection portion and a terminal
  • a third conductor comprising first and second connection portions, at least one terminal, and at least one connecting portion
  • At least one connecting portion of the first conductor spans a connecting portion of the third conductor, or at least one connecting portion of the third conductor spans a connecting portion of the first conductor.
  • the power module is for example an inverter, or an on-board charger (OBC).
  • OBC on-board charger
  • the portions of the conductors of the power module follow one another in a first direction in the order: the connection portion of the second conductor, the first connection portion of the third conductor, the connection portion of the first conductor and the second connection portion of the third conductor;
  • the power module comprises:
  • the transistors of a switch are spaced apart by a distance Dt greater than 2 mm, in particular greater than 3 mm, in particular equal to 4 mm.
  • this substrate is flat, and defines a reference plane.
  • a Z axis is also defined, normal to the plane of the substrate, and directed from the substrate towards the conductors. This Z axis makes it possible to define a height: a plane A will be higher than a plane B if it is further away from the substrate along this vertical Z axis. The distance from a plane to the reference plane is called height.
  • an element C will be said to be “above” an element D if this element C is placed higher than the element D and the projections of the elements C and D on the reference plane overlap.
  • connecting portion of a conductor spanning the connecting portion of another conductor it is meant that at least part of the connecting portion of the conductor is placed above at least part of the connecting portion of the other conductor.
  • connection portions of the conductors are planar.
  • planar connection portions of the conductors extend parallel to each other, and parallel to the reference plane.
  • the flat connection portions of the conductors are substantially coplanar, in particular the parallel planes of the flat connection portions of the conductors are at a height of less than 3 mm, in particular a height of less than 2 mm.
  • the connecting portions of the conductors comprise a conductive bar.
  • the conductive bars comprise a flat face parallel to the plane of the substrate.
  • planar faces of the conductive bars of the first conductor are coplanar and define a connection plane of the first conductor.
  • the flat faces of the conductive bars of the third conductor are coplanar and define a connection plane of the third conductor.
  • the bonding plane of the first conductor is higher than the bonding plane of the third conductor.
  • the bond plane of the third conductor is higher than the bond plane of the first conductor.
  • the connecting planes of the first and third conductors are at the same height, that is, at the same distance from the reference plane.
  • connection planes of the first conductor and the third conductor are placed higher than the flat faces of the connection portions of the conductors.
  • connection planes of the first and third conductors are placed at a height greater than 2 mm, in particular greater than 3 mm.
  • the connecting portions of the conductors are welded, brazed or sintered onto the terminals of the conductors.
  • the connecting portions then comprise a fixing pad allowing the electrical connection between the terminal of the conductor and the connecting portion of the conductor.
  • the connecting portions and the terminals of the connectors are made in one piece.
  • At least one connecting portion comprises a ramp arranged to electrically connect a terminal of the conductor to the conductive bar of a connecting zone of this conductor.
  • this ramp and the conductive bar are made in one piece.
  • this ramp comprises two bends:
  • the connecting portions of the first conductor and the third conductor each comprise at least one conductive pad, electrically connected to a conductive bar of the connecting portion of the conductor on the one hand, and to a connection portion of the conductor on the other hand.
  • the at least one conductive pad is arranged between the first connection portion of the third conductor and the connecting portion of the third conductor.
  • the second conductor comprises at least one conductive pad arranged between the terminal of the second conductor and the connection portion of the second conductor.
  • the second conductor comprises two conductive pads, in particular identical ones, between its terminal and its connection portion.
  • the third conductor comprises at least one conductive pad arranged between the second connection portion of the third conductor and the terminal of the third conductor.
  • the third conductor comprises two conductive pads, in particular identical ones, arranged between its second connection portion and its terminal.
  • the conductive pad(s) of the third conductor arranged between the first connection portion of the third conductor and the connecting portion of the third conductor on the one hand, and, on the other hand, the conductive pad(s) of the third conductor arranged between the second connection portion of the third conductor and the terminal of the third conductor, are transverse to one another, or to one another.
  • the conductive pads are welded, in particular by laser welding, onto the conductive bars of the connecting portions of the conductors and/or onto the terminals and/or onto the connection portions.
  • the conductive pads of the connecting portions are placed between the transistors of a switch.
  • the conductive pads are parallelepipeds made of conductive material, in particular copper.
  • the conductive pads are welded, brazed or sintered on the connection portions of the conductors and/or on the terminals and/or on the connection portions.
  • At least one of the conductive bars has a notch, that is to say a portion of reduced thickness.
  • the notch is made by stamping.
  • the connecting portions of the first conductor and the third conductor have a high thickness, for example a thickness of between 0.2 and 2 mm, in particular of between 0.8 mm and 1.2 mm.
  • the connecting portions of the first conductor and the third conductor have a low thickness at the notch, in particular a thickness of between 0.1 mm and 0.8 mm, in particular 0.6 mm.
  • the high thickness of the connecting portions of the first conductor and the third conductor makes it possible to reduce the width of these portions while retaining their electrical properties.
  • the low thickness at the notch makes it easier to assemble the connecting portions of the first conductor and the third conductor. In particular, this low thickness makes it easier to weld the conductive bars to the pads of the connecting portions of the conductors.
  • At least one conductive bar of the connecting portions of the conductors comprises at least one welding zone, and at least one holding zone arranged to allow the conductive bar to be locked in position during assembly of the conductive bar on the conductive pad of the connecting portion, in particular during welding of the conductive bar on the conductive pad.
  • At least one conductive bar comprises two peripheral holding zones arranged on either side of the central welding zone.
  • At least one conductive bar comprises two peripheral welding zones arranged to be welded to two adjacent conductive pads, and located on either side of a central holding zone.
  • all of the conductive bars of the power module comprise a central welding zone.
  • all of the conductive bars of the power module have two peripheral welding zones.
  • the power module comprises at least one conductive bar comprising a central weld zone, and at least one conductive bar comprising two peripheral weld zones.
  • the invention therefore advantageously allows the crossing of power connections without using the surface of the power module substrate.
  • Figure 1 is a top view representation of a power module according to the invention.
  • Figure 2 is a representation of a conductive bar of a power module according to the invention and its connection with a conductive pad;
  • Figure 3 is a representation of a conductive bar of a power module according to the invention.
  • Figure 4 is a representation of a conductive bar of a power module according to the invention.
  • Figure 5 is a top view of a power module according to another embodiment of the invention.
  • Fig. 6 is a top view of a power module according to another embodiment of the invention.
  • Figure 7 is a top view of a power module according to another embodiment of the invention.
  • FIG. 8 is a top view of a power module according to another embodiment of the invention.
  • Figure 9 is a top view representation of a variant of Figure 1.
  • Figure 1 shows a power module 1 comprising three conductors C+, C-, C ⁇ placed on a substrate 3.
  • the first conductor C+ comprises a connection portion P+, two terminals B+, and two connection portions PL+.
  • the second conductor C- has a connection portion P- and a terminal B-.
  • the third conductor C ⁇ comprises first and second connection portions P1 ⁇ , P2 ⁇ , a terminal B ⁇ , and a connection portion PL ⁇ .
  • the connecting portion of the third conductor PL ⁇ spans the connecting portion of the first conductor P+.
  • connection portions of the conductors P+, P-, P1 ⁇ , P2 ⁇ are flat, parallel to each other and coplanar. They are deposited on the substrate 3.
  • the connecting portions PL+, PL ⁇ of the conductors each comprise a conductive bar 4.
  • These conductive bars 4 have a flat face defining the connection planes of the first and third conductors.
  • connection planes of the first and third conductors C+, C ⁇ are coplanar and placed higher than the flat connection portions P+, P-, P1 ⁇ , P2 ⁇ of the conductors, at a height of 3mm.
  • the connecting portions of the conductors PL+, PL ⁇ are welded, brazed or sintered on the terminals B+, B ⁇ of the conductors C+, C ⁇ at a fixing pad 5 allowing the electrical connection between the terminal of the conductor and the connecting portion of the conductor.
  • At least one connecting portion PL+, PL ⁇ comprises a ramp, formed in one piece with the conductive bar 5, connecting the fixing area to the conductive bar of the connecting portion.
  • This ramp comprises then a lower elbow placed at the height of the fixing range, and an upper elbow placed at the height of the conductive bar.
  • the power module 1 also includes two switches between which is placed a transistor control module 2.
  • the first switch is formed of first aligned TLS transistors, pressed against the first connection portion P1 ⁇ of the third conductor C ⁇ and electrically connected to the connection portion P- of the second conductor C-;
  • the second switch formed from aligned second THS transistors, the second THS transistors being pressed against the connection portion P+ of the first conductor C+ and electrically connected to the second connection portion P2 ⁇ of the third conductor C ⁇ ;
  • the transistors TLS, THS of a switch are separated by a distance Dt equal to 4 mm.
  • Each connecting portion also comprises two conductive pads 6, not visible in this figure and shown in figure 2. These pads are placed between the transistors TLS, THS of a switch. They are electrically connected to a conductive bar 4 of the connecting portion PL+, PL ⁇ of the conductor C+, C ⁇ on the one hand, and to a connection portion P+, P1 ⁇ , P2 ⁇ of the conductor on the other hand.
  • Figure 2 shows the connection of a conductive bar 4 of the power module 1 to a conductive pad 6.
  • the conductive pad, the conductive bar and the connection portion P shown in this figure can belong indifferently to the first or the third conductor C+, C ⁇ .
  • the conductive pad 6 is parallelepipedal in shape and is made of conductive material, in particular copper.
  • the conductive bar has a notch 9 made by stamping, in which the thickness e1 is less than the thickness e2 of the conductive bar 4.
  • the thickness e2 makes it possible to guarantee the electrical properties of the conductive bar 4, and the lower thickness e1 at the notch 9 makes it possible to position the conductive bar on the conductive pad and to facilitate welding.
  • Figures 3 and 4 show a conductive bar 4 of a power module 1 according to two embodiments of the invention.
  • the conductive bar shown can belong indifferently to the first or third conductor C+, C ⁇ .
  • the conductive bar 4 has a central welding zone 7, and two peripheral holding zones 8 are arranged to allow the conductive bar to be locked in position when the conductive bar is welded to the conductive pad.
  • the conductive bar 4 has two peripheral welding zones 7 arranged on either side of a central holding zone 8, and arranged to be welded onto two adjacent conductive pads 6.
  • Figure 5 shows a power module 1 according to another embodiment of the invention, in which the terminals B+, B ⁇ of the conductors and the connecting portions PL+, PL ⁇ are formed in a single piece.
  • Figure 6 shows a power module 1 according to another embodiment of the invention, in which the first conductor C+ comprises a single connection portion PL+.
  • the bonding planes of the first and third conductors C+, C ⁇ are not coplanar, and the bonding plane of the third conductor is placed higher than the bonding plane of the first conductor.
  • Figure 7 shows a power module 1 according to another embodiment of the invention.
  • the first conductor C+ comprises a single connection portion PL+ and the connection plane of the third conductor is placed higher than the connection plane of the first conductor.
  • the connecting portions PL+, PL ⁇ of the first and third conductors C+, C ⁇ here have a “U” shape, and are superimposed.
  • Figure 8 shows a power module 1 according to another embodiment of the invention.
  • the first conductor C+ comprises two connection portions PL+ and the connection plane of the third conductor C ⁇ is placed lower than the connection plane of the first conductor.
  • Figure 9 shows a variant which differs from Figure 1 in that it comprises a plurality of additional conductive pads 6.
  • Two conductive pads 6 are arranged between terminal B- and the first connection portion of conductor PL- instead of direct connection by welding, brazing or sintering. described in Figure 1.
  • Two conductive pads 6 are also arranged between the second connection portion P2 ⁇ and the terminal B ⁇ .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

The invention relates to a power module (1), comprising: • a substrate (3) • a first conductor (C+) comprising a connection portion (P+), at least one terminal (B+), and at least one coupling portion (PL+); • a second conductor (C-) comprising a connection portion (P-) and a terminal (B-); • a third conductor (C~) comprising a first connection portion (P1~) and a second connection portion (P2~), at least one terminal (B~), and at least one coupling portion (PL~); characterised in that at least one coupling portion (PL+) of the first conductor (C+) spans across a connection portion (P~) of the third conductor (C~), or in that at least one coupling portion (PL~) of the third conductor (C~) spans across a connection portion (P+) of the first conductor (C+).

Description

DESCRIPTION DESCRIPTION

Titre : Module de puissance Title: Power module

Domaine technique de l’invention Technical field of the invention

[1] La présente invention concerne un module de puissance. [1] The present invention relates to a power module.

Arrière-plan technologique Technological background

[2] Il est connu d’utiliser un module de puissance implémentant un bras de commutation avec un interrupteur de côté haut formé de plusieurs transistors, dits de côté haut, et un interrupteur de côté bas formé également de plusieurs transistors, dits de côté bas. Généralement, les transistors de chaque côté sont répartis sur deux rangées parallèles déposées sur un substrat. Le module de puissance comporte en outre un circuit de commande avec deux parties, distantes l’une de l’autre, pour la commande de respectivement les transistors de côté haut et les transistors de côté bas. Chacune des deux parties comporte des broches se projetant vers le haut ou vers le bas pour être connectées à des pilotes. [2] It is known to use a power module implementing a switching arm with a high-side switch formed of several transistors, called high-side, and a low-side switch also formed of several transistors, called low-side. Generally, the transistors on each side are distributed on two parallel rows deposited on a substrate. The power module further comprises a control circuit with two parts, spaced apart from each other, for controlling respectively the high-side transistors and the low-side transistors. Each of the two parts comprises pins projecting upwards or downwards to be connected to drivers.

[3] Sur ces modules de puissance, la connexion entre les rangées de transistors et les bornes du module de puissance est réalisée à l’aide de pistes conductrices sur le substrat. [3] On these power modules, the connection between the rows of transistors and the terminals of the power module is made using conductive tracks on the substrate.

[4] Cependant, l’utilisation de pistes de connexion sur le substrat présente plusieurs inconvénients. [4] However, using bonding tracks on the substrate has several drawbacks.

[5] L’espace sur le substrat étant restreint, il y a de fortes contraintes sur la taille et le parcours des pistes conductrices. Certaines pistes ont un parcours long et une section faible, donc une forte impédance. Cela est particulièrement problématique quand l’ensemble des pistes ont des impédances très différentes, ce qui peut nuire à la performance du module de puissance. [5] Since the space on the substrate is limited, there are strong constraints on the size and path of the conductive traces. Some traces have a long path and a small cross-section, therefore a high impedance. This is particularly problematic when all the traces have very different impedances, which can harm the performance of the power module.

[6] De plus, la place occupée par les pistes de connexion nécessite de rapprocher les transistors sur le substrat. On obtient typiquement une distance maximale de 1 mm à 1.6mm entre deux transistors. Cette faible distance induit un couplage thermique entre les différents composants, et augmente l’impédance thermique de l’ensemble du module de puissance. [6] In addition, the space occupied by the connection tracks requires the transistors to be brought closer together on the substrate. Typically, a maximum distance of 1 mm to 1.6 mm is obtained between two transistors. This small distance induces thermal coupling between the different components, and increases the thermal impedance of the entire power module.

[7] Ensuite, l’utilisation de pistes de connexion placées sur le même plan que les transistors nécessite de séparer un interrupteur formé de plusieurs transistors en deux groupes de transistors afin de permettre le passage de pistes de connexion. Cette séparation en groupes de transistors implique un déséquilibre dans le courant traversant ces groupes de transistor, ce qui nuit à l’efficacité du module de puissance. [7] Then, the use of connection tracks placed on the same plane as the transistors requires separating a switch formed by several transistors into two groups of transistors in order to allow the passage of connection tracks. This Separation into groups of transistors implies an imbalance in the current passing through these groups of transistors, which harms the efficiency of the power module.

[8] Il peut ainsi être souhaité de prévoir un module de puissance qui permette de s’affranchir d’au moins une partie des problèmes et contraintes précités. [8] It may therefore be desirable to provide a power module which makes it possible to overcome at least some of the aforementioned problems and constraints.

[9] L’invention concerne un module de puissance comportant : [9] The invention relates to a power module comprising:

• un substrat • a substrate

• un premier conducteur comportant une portion de connexion, au moins une borne, et au moins une portion de liaison; • a first conductor comprising a connection portion, at least one terminal, and at least one link portion;

• un deuxième conducteur comportant une portion de connexion et une borne;• a second conductor comprising a connection portion and a terminal;

• un troisième conducteur comportant des première et deuxième portions de connexion, au moins une borne, et au moins une portion de liaison; • a third conductor comprising first and second connection portions, at least one terminal, and at least one connecting portion;

• un substrat plat sur lequel sont placés les différents conducteurs. • a flat substrate on which the various conductors are placed.

Caractérisé en ce qu’au moins une portion de liaison du premier conducteur enjambe une portion de connexion du troisième conducteur, ou qu’au moins une portion de liaison du troisième conducteur enjambe une portion de connexion du premier conducteur. Characterized in that at least one connecting portion of the first conductor spans a connecting portion of the third conductor, or at least one connecting portion of the third conductor spans a connecting portion of the first conductor.

[10] Selon un aspect de l’invention, le module de puissance est par exemple un onduleur, ou un chargeur embarqué (On Board Charger ou OBC). [10] According to one aspect of the invention, the power module is for example an inverter, or an on-board charger (OBC).

[11] Selon un aspect de l'invention, les portions des conducteurs du module de puissance se succèdent selon une première direction dans l’ordre : la portion de connexion du deuxième conducteur, la première portion de connexion du troisième conducteur, la portion de connexion du premier conducteur et la deuxième portion de connexion du troisième conducteur ; [11] According to one aspect of the invention, the portions of the conductors of the power module follow one another in a first direction in the order: the connection portion of the second conductor, the first connection portion of the third conductor, the connection portion of the first conductor and the second connection portion of the third conductor;

[12] Selon un aspect de l’invention, le module de puissance comporte : [12] According to one aspect of the invention, the power module comprises:

• un premier interrupteur formé de premiers transistors alignés, les premiers transistors étant plaqués contre la première portion de connexion du troisième conducteur et connectés électriquement à la portion de connexion du deuxième conducteur; • a first switch formed from aligned first transistors, the first transistors being pressed against the first connection portion of the third conductor and electrically connected to the connection portion of the second conductor;

• un deuxième interrupteur formé de deuxièmes transistors alignés, les deuxièmes transistors étant plaqués contre la portion de connexion du premier conducteur et connectés électriquement à la deuxième portion de connexion du troisième conducteur; et • a second switch formed of aligned second transistors, the second transistors being pressed against the connection portion of the first conductor and electrically connected to the second connection portion of the third conductor; and

• entre les premiers transistors et les deuxièmes transistors, un circuit de commande de transistors. [13] Selon un aspect de l’invention, les transistors d’un interrupteur sont écartés d’une distance Dt supérieure à 2mm, notamment supérieure à 3mm, notamment égale à 4mm. • between the first transistors and the second transistors, a transistor control circuit. [13] According to one aspect of the invention, the transistors of a switch are spaced apart by a distance Dt greater than 2 mm, in particular greater than 3 mm, in particular equal to 4 mm.

[14] Selon un aspect de l’invention, ce substrat est plat, et définit un plan de référence. On définit également un axe Z normal au plan du substrat, et dirigé du substrat vers les conducteurs. Cet axe Z permet de définir une hauteur : un plan A sera plus haut qu’un plan B s’il est plus distant du substrat selon cet axe vertical Z. On nomme hauteur la distance d’un plan au plan de référence. [14] According to one aspect of the invention, this substrate is flat, and defines a reference plane. A Z axis is also defined, normal to the plane of the substrate, and directed from the substrate towards the conductors. This Z axis makes it possible to define a height: a plane A will be higher than a plane B if it is further away from the substrate along this vertical Z axis. The distance from a plane to the reference plane is called height.

[15] Par ailleurs, un élément C sera dit « au-dessus » d’un élément D si cet élément C est placé plus haut que l’élément D et que les projections des éléments C et D sur le plan de référence se chevauchent. [15] Furthermore, an element C will be said to be “above” an element D if this element C is placed higher than the element D and the projections of the elements C and D on the reference plane overlap.

[16] Lorsque l’on évoque qu’une portion de liaison d’un conducteur enjambant la portion de connexion d’un autre conducteur, on entend qu’au moins une partie de la portion de liaison du conducteur est placée au-dessus d’au moins une partie de la portion de connexion de l’autre conducteur. [16] When referring to a connecting portion of a conductor spanning the connecting portion of another conductor, it is meant that at least part of the connecting portion of the conductor is placed above at least part of the connecting portion of the other conductor.

[17] Selon un aspect de l’invention, les portions de connexion des conducteurs sont planes [17] According to one aspect of the invention, the connection portions of the conductors are planar.

[18] Selon un aspect de l’invention, les portions de connexion planes des conducteurs s’étendent parallèlement les unes aux autres, et parallèlement au plan de référence. [18] According to one aspect of the invention, the planar connection portions of the conductors extend parallel to each other, and parallel to the reference plane.

[19] Selon un aspect de l'invention, les portions de connexion planes des conducteurs sont sensiblement coplanaires, notamment les plans parallèles des portions de connexion planes des conducteurs sont à une hauteur inférieure à 3mmn notamment une hauteur inférieure à 2mm. [19] According to one aspect of the invention, the flat connection portions of the conductors are substantially coplanar, in particular the parallel planes of the flat connection portions of the conductors are at a height of less than 3 mm, in particular a height of less than 2 mm.

[20] Selon un aspect de l'invention, les portions de liaison des conducteurs comportent un barreau conducteur. [20] According to one aspect of the invention, the connecting portions of the conductors comprise a conductive bar.

[21] Selon un aspect de l'invention, les barreaux conducteurs comportent une face plane parallèle au plan du substrat. [21] According to one aspect of the invention, the conductive bars comprise a flat face parallel to the plane of the substrate.

[22] Selon un aspect de l'invention, les faces planes des barreaux conducteurs du premier conducteur sont coplanaires et définissent un plan de liaison du premier conducteur. [22] According to one aspect of the invention, the planar faces of the conductive bars of the first conductor are coplanar and define a connection plane of the first conductor.

[23] Selon un aspect de l'invention, les faces planes des barreaux conducteurs du troisième conducteur sont coplanaires et définissent un plan de liaison du troisième conducteur. [23] According to one aspect of the invention, the flat faces of the conductive bars of the third conductor are coplanar and define a connection plane of the third conductor.

[24] Selon un aspect de l'invention, le plan de liaison du premier conducteur est plus haut que le plan de liaison du troisième conducteur. [25] Alternativement, le plan de liaison du troisième conducteur est plus haut que le plan de liaison du premier conducteur. [24] According to one aspect of the invention, the bonding plane of the first conductor is higher than the bonding plane of the third conductor. [25] Alternatively, the bond plane of the third conductor is higher than the bond plane of the first conductor.

[26] Alternativement, les plans de liaison du premier et du troisième conducteur sont à la même hauteur, c’est-à dire à la même distance du plan de référence. [26] Alternatively, the connecting planes of the first and third conductors are at the same height, that is, at the same distance from the reference plane.

[27] Selon un aspect de l’invention, les plans de liaison du premier conducteur et du troisième conducteur sont placés plus haut que les faces planes des portions de connexion des conducteurs. [27] According to one aspect of the invention, the connection planes of the first conductor and the third conductor are placed higher than the flat faces of the connection portions of the conductors.

[28] Notamment, les plans de liaison des premier et troisième conducteurs sont placés à une hauteur supérieure à 2mm, notamment supérieure à 3mm. [28] In particular, the connection planes of the first and third conductors are placed at a height greater than 2 mm, in particular greater than 3 mm.

[29] Selon un aspect de l'invention, les portions de liaison des conducteurs sont soudées, brasées ou frittées sur les bornes des conducteurs. Les portions de liaison comportent alors une plage de fixation permettant la connexion électrique entre la borne du conducteur et la portion de liaison du conducteur. [29] According to one aspect of the invention, the connecting portions of the conductors are welded, brazed or sintered onto the terminals of the conductors. The connecting portions then comprise a fixing pad allowing the electrical connection between the terminal of the conductor and the connecting portion of the conductor.

[30] Alternativement, les portions de liaison et les bornes des connecteurs sont réalisées d’un seul tenant. [30] Alternatively, the connecting portions and the terminals of the connectors are made in one piece.

[31] Selon un aspect de l'invention, au moins une portion de liaison comporte une rampe arrangée pour connecter électriquement une borne du conducteur au barreau conducteur d’une zone de liaison de ce conducteur. [31] According to one aspect of the invention, at least one connecting portion comprises a ramp arranged to electrically connect a terminal of the conductor to the conductive bar of a connecting zone of this conductor.

[32] Selon un aspect de l'invention, cette rampe et le barreau conducteur sont réalisé d’un seul tenant. [32] According to one aspect of the invention, this ramp and the conductive bar are made in one piece.

[33] Selon un aspect de l'invention, cette rampe comporte deux coudes : [33] According to one aspect of the invention, this ramp comprises two bends:

• Un coude supérieur placé à la hauteur du barreau conducteur • An upper elbow placed at the height of the conductor bar

• Un coude inférieur placé à la hauteur de la borne du conducteur. • A lower elbow placed at the height of the conductor terminal.

[34] Selon un aspect de l'invention, les portions de liaison du premier conducteur et du troisième conducteur comprennent chacune au moins un plot conducteur, connecté électriquement à un barreau conducteur de la portion de liaison du conducteur d’une part, et à une portion de connexion du conducteur d’autre part. En particulier, le au moins un plot conducteur est disposé entre la première portion de connexion du troisième conducteur et la portion de liaison du troisième conducteur. [34] According to one aspect of the invention, the connecting portions of the first conductor and the third conductor each comprise at least one conductive pad, electrically connected to a conductive bar of the connecting portion of the conductor on the one hand, and to a connection portion of the conductor on the other hand. In particular, the at least one conductive pad is arranged between the first connection portion of the third conductor and the connecting portion of the third conductor.

[35] Selon un aspect de l’invention, le deuxième conducteur comprend au moins un plot conducteur disposé entre la borne du deuxième conducteur et la portion de connexion du deuxième conducteur. De préférence le deuxième conducteur comprend deux plots conducteurs, notamment identiques, entre sa borner et sa portion de connexion. [36] Selon un aspect de l’invention, le troisième conducteur comprend au moins un plot conducteur disposé entre la deuxième portion de connexion du troisième conducteur et la borne du troisième conducteur. De préférence le troisième conducteur comprend deux plots conducteurs, notamment identiques, disposés entre sa deuxième portion de connexion et sa borne. [35] According to one aspect of the invention, the second conductor comprises at least one conductive pad arranged between the terminal of the second conductor and the connection portion of the second conductor. Preferably, the second conductor comprises two conductive pads, in particular identical ones, between its terminal and its connection portion. [36] According to one aspect of the invention, the third conductor comprises at least one conductive pad arranged between the second connection portion of the third conductor and the terminal of the third conductor. Preferably, the third conductor comprises two conductive pads, in particular identical ones, arranged between its second connection portion and its terminal.

[37] Selon un aspect de l’invention, le ou les plots conducteurs du troisième conducteur disposés entre la première portion de connexion du troisième conducteur et la portion de liaison du troisième conducteur d’une part, et, d’autre part, le ou les plots conducteurs du troisième conducteur disposés entre la deuxième portion de connexion du troisième conducteur et la borne du troisième conducteur, sont transversaux l’un par rapport à l’autre, ou les uns par rapport aux autres. [37] According to one aspect of the invention, the conductive pad(s) of the third conductor arranged between the first connection portion of the third conductor and the connecting portion of the third conductor on the one hand, and, on the other hand, the conductive pad(s) of the third conductor arranged between the second connection portion of the third conductor and the terminal of the third conductor, are transverse to one another, or to one another.

[38] Selon un aspect de l'invention, les plots conducteurs sont soudés, notamment par soudure laser, sur les barreaux conducteurs des portions de liaison des conducteurs et/ou sur les bornes et/ou sur les portions de connexion. [38] According to one aspect of the invention, the conductive pads are welded, in particular by laser welding, onto the conductive bars of the connecting portions of the conductors and/or onto the terminals and/or onto the connection portions.

[39] Selon un aspect de l'invention, les plots conducteurs des portions de liaison sont placés entre les transistors d’un interrupteur. [39] According to one aspect of the invention, the conductive pads of the connecting portions are placed between the transistors of a switch.

[40] Selon un aspect de l'invention, les plots conducteurs sont des parallélépipèdes en matériau conducteur, notamment en cuivre. [40] According to one aspect of the invention, the conductive pads are parallelepipeds made of conductive material, in particular copper.

[41] Selon un aspect de l'invention, les plots conducteurs sont soudés, brasés ou frittés sur les portions de connexion des conducteurs et/ou sur les bornes et/ou sur les portions de connexion. [41] According to one aspect of the invention, the conductive pads are welded, brazed or sintered on the connection portions of the conductors and/or on the terminals and/or on the connection portions.

[42] Selon un aspect de l'invention, au moins un des barreaux conducteurs présente une encoche, c’est-à-dire une portion d’épaisseur moindre. [42] According to one aspect of the invention, at least one of the conductive bars has a notch, that is to say a portion of reduced thickness.

[43] Par exemple, l’encoche est réalisée par estampillage. [43] For example, the notch is made by stamping.

[44] Selon un aspect de l'invention, les portions de liaison du premier conducteur et du troisième conducteur ont une épaisseur élevée, par exemple une épaisseur comprise entre 0.2 et 2mm, notamment comprise entre 0.8mm et 1.2mm. [44] According to one aspect of the invention, the connecting portions of the first conductor and the third conductor have a high thickness, for example a thickness of between 0.2 and 2 mm, in particular of between 0.8 mm and 1.2 mm.

[45] Selon un aspect de l'invention, les portions de liaison du premier conducteur et du troisième conducteur ont au niveau de l’encoche une épaisseur faible, notamment une épaisseur comprise entre 0.1 mm et 0.8 mm, notamment 0.6mm. [45] According to one aspect of the invention, the connecting portions of the first conductor and the third conductor have a low thickness at the notch, in particular a thickness of between 0.1 mm and 0.8 mm, in particular 0.6 mm.

[46] Selon un aspect de l'invention, l’épaisseur élevée des portions de liaison du premier conducteur et du troisième conducteur permet de réduire la largeur de ces portions tout en conservant leurs propriétés électriques. [47] Selon un aspect de l'invention, l’épaisseur faible au niveau de l’encoche permet de faciliter l’assemblage des portions de liaison du premier conducteur et du troisième conducteur. Notamment, cette épaisseur faible facilite le soudage des barreaux conducteurs sur les plots des portions de liaison des conducteurs. [46] According to one aspect of the invention, the high thickness of the connecting portions of the first conductor and the third conductor makes it possible to reduce the width of these portions while retaining their electrical properties. [47] According to one aspect of the invention, the low thickness at the notch makes it easier to assemble the connecting portions of the first conductor and the third conductor. In particular, this low thickness makes it easier to weld the conductive bars to the pads of the connecting portions of the conductors.

[48] De plus, la présence d’une encoche permet de faciliter le positionnement des barreaux conducteurs sur les plots lors de l’assemblage des parties de liaison des premiers conducteurs et troisième conducteurs. [48] In addition, the presence of a notch makes it easier to position the conductive bars on the pads when assembling the connecting parts of the first and third conductors.

[49] Selon un aspect de l’invention, au moins un barreau conducteur des portions de liaison des conducteurs comporte au moins une zone de soudure, et au moins une zone de maintien arrangée pour permettre le verrouillage en position du barreau conducteur lors de l’assemblage du barreau conducteur sur le plot conducteur de la portion de liaison, notamment lors de la soudure du barreau conducteur sur le plot conducteur. [49] According to one aspect of the invention, at least one conductive bar of the connecting portions of the conductors comprises at least one welding zone, and at least one holding zone arranged to allow the conductive bar to be locked in position during assembly of the conductive bar on the conductive pad of the connecting portion, in particular during welding of the conductive bar on the conductive pad.

[50] Selon un aspect de l'invention, au moins un barreau conducteur comporte deux zones de maintien périphériques disposées de part et d’autre de la zone de soudure centrale. [50] According to one aspect of the invention, at least one conductive bar comprises two peripheral holding zones arranged on either side of the central welding zone.

[51] Selon un aspect de l'invention, au moins un barreau conducteur comporte deux zones de soudure périphériques arrangées pour être soudées à deux plots conducteurs adjacents, et situées de part et d’autre d’une zone de maintien centrale. [51] According to one aspect of the invention, at least one conductive bar comprises two peripheral welding zones arranged to be welded to two adjacent conductive pads, and located on either side of a central holding zone.

[52] Selon un aspect de l’invention, l’ensemble des barreaux conducteurs du module de puissance comportent une zone de soudure centrale. [52] According to one aspect of the invention, all of the conductive bars of the power module comprise a central welding zone.

[53] Alternativement, l’ensemble des barreaux conducteurs du module de puissance comportent deux zones de soudure périphériques. [53] Alternatively, all of the conductive bars of the power module have two peripheral welding zones.

[54] Alternativement, le module de puissance comporte au moins un barreau conducteur comportant une zone de soudure centrale, et au moins un barreau conducteur comportant deux zones de soudures périphériques. [54] Alternatively, the power module comprises at least one conductive bar comprising a central weld zone, and at least one conductive bar comprising two peripheral weld zones.

[55] L’invention permet donc avantageusement le croisement des connexions de puissance sans utiliser la surface du substrat du module de puissance. [55] The invention therefore advantageously allows the crossing of power connections without using the surface of the power module substrate.

[56] Ne pas utiliser la surface du substrat permet ainsi d’éloigner les transistors composant un interrupteur. [56] Not using the surface of the substrate thus makes it possible to move the transistors making up a switch away.

[57] L’utilisation de barreaux conducteurs surélevés par rapport au substrat permet de diminuer la longueur de la liaison électrique et d’augmenter leur section, ce qui permet de diminuer l’impédance des portions de liaison et donc d’éviter les pertes. [58] L’utilisation de plots conducteurs placés entre les transistors d’un interrupteur permet avantageusement d’augmenter la dissipation thermique, donc de réduire l’impédance thermique globale du module de puissance. [57] The use of conductive bars raised relative to the substrate makes it possible to reduce the length of the electrical connection and to increase their section, which makes it possible to reduce the impedance of the connection portions and therefore to avoid losses. [58] The use of conductive pads placed between the transistors of a switch advantageously makes it possible to increase heat dissipation, and therefore to reduce the overall thermal impedance of the power module.

Liste des figures List of figures

[59] D’autres caractéristiques, détails et avantages de l’invention ressortiront plus clairement à la lecture de la description qui suit d’une part, et de plusieurs exemples de réalisation donnés à titre indicatif et non limitatif en référence aux dessins schématiques annexés d’autre part, sur lesquels : [59] Other characteristics, details and advantages of the invention will emerge more clearly from reading the description which follows on the one hand, and from several examples of embodiment given for informational and non-limiting purposes with reference to the attached schematic drawings on the other hand, in which:

[60] [Fig 1] La figure 1 est une représentation en vue de dessus d’un module de puissance selon l’invention ; [60] [Fig 1] Figure 1 is a top view representation of a power module according to the invention;

[61] [Fig. 2] La figure 2 est une représentation d’un barreau conducteur d’un module de puissance selon l’invention et de sa connexion avec un plot conducteur ; [61] [Fig. 2] Figure 2 is a representation of a conductive bar of a power module according to the invention and its connection with a conductive pad;

[62] [Fig.3] La figure 3 est une représentation d’un barreau conducteur d’un module de puissance selon l’invention. [62] [Fig.3] Figure 3 is a representation of a conductive bar of a power module according to the invention.

[63] [Fig.4] La figure 4 est une représentation d’un barreau conducteur d’un module de puissance selon l’invention. [63] [Fig.4] Figure 4 is a representation of a conductive bar of a power module according to the invention.

[64] [Fig. 5] La figure 5 est une vue de dessus d’un module de puissance selon un autre mode de réalisation de l’invention ; [64] [Fig. 5] Figure 5 is a top view of a power module according to another embodiment of the invention;

[65] [Fig. 6] La figure 6 est une vue de dessus d’un module de puissance selon un autre mode de réalisation de l’invention; [65] [Fig. 6] Fig. 6 is a top view of a power module according to another embodiment of the invention;

[66] [Fig. 7] La figure 7 est une vue de dessus d’un module de puissance selon un autre mode de réalisation de l’invention ; [66] [Fig. 7] Figure 7 is a top view of a power module according to another embodiment of the invention;

[67] [Fig. 8] La figure 8 est une vue de dessus d’un module de puissance selon un autre mode de réalisation de l’invention ; [67] [Fig. 8] Figure 8 is a top view of a power module according to another embodiment of the invention;

[68] [Fig. 9] La figure 9 est une représentation en vue de dessus d’une variante de la figure 1 . [68] [Fig. 9] Figure 9 is a top view representation of a variant of Figure 1.

[69] Les caractéristiques, variantes et les différentes formes de réalisation de l’invention peuvent être associées les unes avec les autres, selon diverses combinaisons, dans la mesure où elles ne sont pas incompatibles ou exclusives les unes par rapport aux autres. On pourra notamment imaginer des variantes de l’invention ne comprenant qu’une sélection de caractéristiques décrites par la suite de manière isolée des autres caractéristiques décrites, si cette sélection de caractéristiques est suffisante pour conférer un avantage technique et/ou pour différencier l’invention par rapport à l’état de la technique antérieur. [69] The features, variants and different embodiments of the invention may be combined with each other, in various combinations, to the extent that they are not incompatible or mutually exclusive. In particular, variants of the invention may be imagined comprising only a selection of features described below in isolation from the other features described, if this selection of features is sufficient to to confer a technical advantage and/or to differentiate the invention from the prior art.

[70] On a représenté, sur la figure 1 un module de puissance 1 comportant trois conducteurs C+, C-, C~ placés sur un substrat 3 [70] Figure 1 shows a power module 1 comprising three conductors C+, C-, C~ placed on a substrate 3.

[71] Le premier conducteur C+ comporte une portion de connexion P+, deux bornes B+, et deux portions de liaison PL+. [71] The first conductor C+ comprises a connection portion P+, two terminals B+, and two connection portions PL+.

[72] Le deuxième conducteur C- comporte une portion de connexion P- et une borne B-. [72] The second conductor C- has a connection portion P- and a terminal B-.

[73] Le troisième conducteur C~ comporte des première et deuxième portions de connexion P1~, P2~, une borne B~, et une portion de liaison PL~. [73] The third conductor C~ comprises first and second connection portions P1~, P2~, a terminal B~, and a connection portion PL~.

[74] Les portions des conducteurs du module de puissance se succèdent selon une première direction D1 dans l’ordre : la portion de connexion P- du deuxième conducteur C-, la première portion de connexion P1~ du troisième conducteur C~, la portion de connexion P+ du premier conducteur C et la deuxième portion de connexion P2~ du troisième conducteur C~. [74] The portions of the conductors of the power module follow one another in a first direction D1 in the order: the connection portion P- of the second conductor C-, the first connection portion P1~ of the third conductor C~, the connection portion P+ of the first conductor C and the second connection portion P2~ of the third conductor C~.

[75] Les deux portions de liaison du premier conducteur PL+ enjambent la première portion de connexion du troisième conducteur P1~. [75] The two connecting portions of the first conductor PL+ span the first connecting portion of the third conductor P1~.

[76] De plus, la portion de liaison du troisième conducteur PL~ enjambe la portion de connexion du premier conducteur P+. [76] Furthermore, the connecting portion of the third conductor PL~ spans the connecting portion of the first conductor P+.

[77] Les portions de connexion des conducteurs P+, P-, P1~, P2~ sont planes, parallèles les unes aux autres et coplanaires. Elles sont déposées sur le substrat 3. [77] The connection portions of the conductors P+, P-, P1~, P2~ are flat, parallel to each other and coplanar. They are deposited on the substrate 3.

[78] Les portions de liaison PL+, PL~ des conducteurs comportent chacune un barreau conducteur 4. [78] The connecting portions PL+, PL~ of the conductors each comprise a conductive bar 4.

[79] Ces barreaux conducteurs 4 comportent une face plane définissant les plans de liaison du premier et du troisième conducteur. [79] These conductive bars 4 have a flat face defining the connection planes of the first and third conductors.

[80] Dans le mode de réalisation illustré sur la figure 1 , les plans de liaison du premier et du troisième conducteur C+, C~ sont coplanaires et placés plus haut que les portions de connexion P+, P-, P1~, P2~ planes des conducteurs, à une hauteur de 3mm. [80] In the embodiment illustrated in Figure 1, the connection planes of the first and third conductors C+, C~ are coplanar and placed higher than the flat connection portions P+, P-, P1~, P2~ of the conductors, at a height of 3mm.

[81] Les portions de liaison des conducteurs PL+, PL~ sont soudées, brasées ou frittées sur les bornes B+, B~ des conducteurs C+, C~ au niveau d’une plage de fixation 5 permettant la connexion électrique entre la borne du conducteur et la portion de liaison du conducteur. [81] The connecting portions of the conductors PL+, PL~ are welded, brazed or sintered on the terminals B+, B~ of the conductors C+, C~ at a fixing pad 5 allowing the electrical connection between the terminal of the conductor and the connecting portion of the conductor.

[82] Dans un mode de réalisation non représenté, au moins une portion de liaison PL+, PL~ comporte une rampe, formée d’un seul tenant avec le barreau conducteur 5, reliant la plage de fixation au barreau conducteur de la portion de liaison. Cette rampe comporte alors un coude inférieur placé à la hauteur de la plage de fixation, et un coude supérieur placé à la hauteur du barreau conducteur. [82] In an embodiment not shown, at least one connecting portion PL+, PL~ comprises a ramp, formed in one piece with the conductive bar 5, connecting the fixing area to the conductive bar of the connecting portion. This ramp comprises then a lower elbow placed at the height of the fixing range, and an upper elbow placed at the height of the conductive bar.

[83] Le module de puissance 1 comporte également deux interrupteurs entre lesquels est placé un module de commande de transistors 2. [83] The power module 1 also includes two switches between which is placed a transistor control module 2.

[84] Le premier interrupteur est formé de premiers transistors TLS alignés, plaqués contre la première portion de connexion P1~ du troisième conducteur C~ et connectés électriquement à la portion de connexion P- du deuxième conducteur C- ; [84] The first switch is formed of first aligned TLS transistors, pressed against the first connection portion P1~ of the third conductor C~ and electrically connected to the connection portion P- of the second conductor C-;

[85] Le deuxième interrupteur formé de deuxièmes transistors THS alignés, les deuxièmes transistors THS étant plaqués contre la portion de connexion P+ du premier conducteur C+ et connectés électriquement à la deuxième portion de connexion P2~ du troisième conducteur C~ ; [85] The second switch formed from aligned second THS transistors, the second THS transistors being pressed against the connection portion P+ of the first conductor C+ and electrically connected to the second connection portion P2~ of the third conductor C~;

[86] Les transistors TLS, THS d’un interrupteur sont écartés d’une distance Dt égale à 4mm. [86] The transistors TLS, THS of a switch are separated by a distance Dt equal to 4 mm.

[87] Chaque portion de liaison comporte également deux plots conducteurs 6, non visibles sur cette figure et représentés sur la figure 2. Ces plots sont placés entre les transistors TLS, THS d’un interrupteur. Ils sont connecté électriquement à un barreau conducteur 4 de la portion de liaison PL+, PL~ du conducteur C+ , C~ d’une part, et à une portion de connexion P+, P1~, P2~ du conducteur d’autre part. [87] Each connecting portion also comprises two conductive pads 6, not visible in this figure and shown in figure 2. These pads are placed between the transistors TLS, THS of a switch. They are electrically connected to a conductive bar 4 of the connecting portion PL+, PL~ of the conductor C+, C~ on the one hand, and to a connection portion P+, P1~, P2~ of the conductor on the other hand.

[88] On a représenté sur la figure 2 la connexion d’un barreau conducteur 4 du module de puissance 1 sur un plot conducteur 6. Le plot conducteur, le barreau conducteur et la portion de connexion P représentés sur cette figure peuvent appartenir indifféremment au premier ou au troisième conducteur C+, C~. [88] Figure 2 shows the connection of a conductive bar 4 of the power module 1 to a conductive pad 6. The conductive pad, the conductive bar and the connection portion P shown in this figure can belong indifferently to the first or the third conductor C+, C~.

[89] Le plot conducteur 6 est de forme parallélépipédique et est en matériau conducteur, notamment en cuivre. [89] The conductive pad 6 is parallelepipedal in shape and is made of conductive material, in particular copper.

[90] Il est soudé par soudure laser sur le barreaux conducteur 4 d’une part, et soudé, brasé ou fritté sur la portion de connexion P d’autre part. [90] It is welded by laser welding on the conductive bars 4 on the one hand, and welded, brazed or sintered on the connection portion P on the other hand.

[91] Le barreau conducteur comporte une encoche 9 réalisée par estampillage, dans laquelle l’épaisseur e1 est inférieure à l’épaisseur e2 du barreau conducteur 4. [91] The conductive bar has a notch 9 made by stamping, in which the thickness e1 is less than the thickness e2 of the conductive bar 4.

[92] L’épaisseur e2 permet de garantir les propriétés électriques du barreau conducteur 4, et l’épaisseur plus faible e1 au niveau de l’encoche 9 permet de positionner le barreau conducteur sur le plot conducteur et de faciliter la soudure. [92] The thickness e2 makes it possible to guarantee the electrical properties of the conductive bar 4, and the lower thickness e1 at the notch 9 makes it possible to position the conductive bar on the conductive pad and to facilitate welding.

[93] On a représenté sur les figures 3 et 4 un barreau conducteur 4 d’un module de puissance 1 selon deux modes de réalisation de l’invention. Dans ces deux figures le barreau conducteur représenté peut appartenir indifféremment au premier ou au troisième conducteur C+, C~. [93] Figures 3 and 4 show a conductive bar 4 of a power module 1 according to two embodiments of the invention. In these two figures the The conductive bar shown can belong indifferently to the first or third conductor C+, C~.

[94] Sur la figure 3, le barreau conducteur 4 comporte une zone de soudure centrale 7, et deux zones de maintien 8 périphériques sont arrangées pour permettre le verrouillage en position du barreau conducteur lors de la soudure du barreau conducteur sur le plot conducteur. [94] In Figure 3, the conductive bar 4 has a central welding zone 7, and two peripheral holding zones 8 are arranged to allow the conductive bar to be locked in position when the conductive bar is welded to the conductive pad.

[95] Ces deux zones de maintien 8 périphériques disposées de part et d’autre de la zone de soudure 7 centrale. [95] These two peripheral holding zones 8 are arranged on either side of the central welding zone 7.

[96] Sur la figure 4 en revanche, le barreau conducteur 4 comporte deux zones de soudure 7 périphériques disposées de part et d’autre d’une zone de maintien 8 centrale, et arrangées pour être soudées sur deux plots conducteurs 6 adjacents. [96] In Figure 4, on the other hand, the conductive bar 4 has two peripheral welding zones 7 arranged on either side of a central holding zone 8, and arranged to be welded onto two adjacent conductive pads 6.

[97] On a représenté sur la figure 5 un module de puissance 1 selon un autre mode de réalisation de l’invention, dans lequel les bornes B+, B~ des conducteurs et les portions de liaison PL+, PL~ sont formés d’un seul tenant. [97] Figure 5 shows a power module 1 according to another embodiment of the invention, in which the terminals B+, B~ of the conductors and the connecting portions PL+, PL~ are formed in a single piece.

[98] On a représenté sur la figure 6 un module de puissance 1 selon un autre mode de réalisation de l’invention, dans lequel le premier conducteur C+ comporte une seule portion de liaison PL+. [98] Figure 6 shows a power module 1 according to another embodiment of the invention, in which the first conductor C+ comprises a single connection portion PL+.

[99] De plus, les plans de liaison des premiers et troisièmes conducteurs C+, C~ ne sont pas coplanaires, et le plan de liaison du troisième conducteur est placé plus haut que le plan de liaison du premier conducteur. [99] Furthermore, the bonding planes of the first and third conductors C+, C~ are not coplanar, and the bonding plane of the third conductor is placed higher than the bonding plane of the first conductor.

[100] On a représenté sur la figure 7 un module de puissance 1 selon un autre mode de réalisation de l’invention. Ici, le premier conducteur C+ comporte une seule portion de liaison PL+ et le plan de liaison du troisième conducteur est placé plus haut que le plan de liaison du premier conducteur. [100] Figure 7 shows a power module 1 according to another embodiment of the invention. Here, the first conductor C+ comprises a single connection portion PL+ and the connection plane of the third conductor is placed higher than the connection plane of the first conductor.

[101] Les portions de liaison PL+, PL~ des premiers et troisième conducteurs C+, C~ ont ici une forme en « U », et sont superposés. [101] The connecting portions PL+, PL~ of the first and third conductors C+, C~ here have a “U” shape, and are superimposed.

[102] On a représenté sur la figure 8 un module de puissance 1 selon un autre mode de réalisation de l’invention. Ici, le premier conducteur C+ comporte deux portions de liaison PL+ et le plan de liaison du troisième conducteur C~ est placé plus bas que le plan de liaison du premier conducteur [102] Figure 8 shows a power module 1 according to another embodiment of the invention. Here, the first conductor C+ comprises two connection portions PL+ and the connection plane of the third conductor C~ is placed lower than the connection plane of the first conductor.

[103] On a représenté sur la figure 9 une variante qui se différencie de la figure 1 en ce qu’elle comprend une pluralité de plots conducteurs 6 additionnels. Deux plots conducteurs 6 sont disposés entre la borne B- et la première portion de connexion du conducteur PL- en lieu et place de la connexion directe par soudage, brasage ou frittage décrite à la figure 1 . Deux plots conducteurs 6 sont également disposés entre la deuxième portion de connexion P2~ et la borne B~. [103] Figure 9 shows a variant which differs from Figure 1 in that it comprises a plurality of additional conductive pads 6. Two conductive pads 6 are arranged between terminal B- and the first connection portion of conductor PL- instead of direct connection by welding, brazing or sintering. described in Figure 1. Two conductive pads 6 are also arranged between the second connection portion P2~ and the terminal B~.

Claims

REVENDICATIONS [Revendication 1] Module de puissance (1) comportant : [Claim 1] Power module (1) comprising: • Un substrat (3) • A substrate (3) • un premier conducteur (C+) comportant une portion de connexion (P+), au moins une borne (B+), et au moins une portion de liaison (PL+); • a first conductor (C+) comprising a connection portion (P+), at least one terminal (B+), and at least one connection portion (PL+); • un deuxième conducteur (C-) comportant une portion de connexion (P-) et une borne (B-); • a second conductor (C-) comprising a connection portion (P-) and a terminal (B-); • un troisième conducteur (C~) comportant des première (P1~) et deuxième portions de connexion (P2~), au moins une borne (B~), et au moins une portion de liaison (PL~); • a third conductor (C~) comprising first (P1~) and second connection portions (P2~), at least one terminal (B~), and at least one connection portion (PL~); Caractérisé en ce qu’au moins une portion de liaison (PL+) du premier conducteur (C+) enjambe une portion de connexion (P~) du troisième conducteur (C~), ou qu’au moins une portion de liaison (PL~) du troisième conducteur (C~) enjambe une portion de connexion (P+) du premier conducteur (C+). Characterized in that at least one connection portion (PL+) of the first conductor (C+) spans a connection portion (P~) of the third conductor (C~), or that at least one connection portion (PL~) of the third conductor (C~) spans a connection portion (P+) of the first conductor (C+). [Revendication 2] Module de puissance (1) selon la revendication 1 , dans lequel les portions de connexion (P+, P-, P1~, P2~) des conducteurs (C+, C-, C~) du module de puissance se succèdent selon une première direction (D1) dans l’ordre : la portion de connexion (P-) du deuxième conducteur (C-), la première portion de connexion (P1~) du troisième conducteur (C~), la portion de connexion (P+) du premier conducteur (C+) et la deuxième portion de connexion (P2~) du troisième conducteur (C~); [Claim 2] Power module (1) according to claim 1, wherein the connection portions (P+, P-, P1~, P2~) of the conductors (C+, C-, C~) of the power module follow one another in a first direction (D1) in the order: the connection portion (P-) of the second conductor (C-), the first connection portion (P1~) of the third conductor (C~), the connection portion (P+) of the first conductor (C+) and the second connection portion (P2~) of the third conductor (C~); [Revendication 3] Module de puissance (1) selon l’une des revendications précédentes, comportant : [Claim 3] Power module (1) according to one of the preceding claims, comprising: • un premier interrupteur formé de premiers transistors (LS) alignés, les premiers transistors étant plaqués contre la première portion de connexion (P1~) du troisième conducteur (C~) et connectés électriquement à la portion de connexion (P-) du deuxième conducteur (C-); • a first switch formed of first aligned transistors (LS), the first transistors being pressed against the first connection portion (P1~) of the third conductor (C~) and electrically connected to the connection portion (P-) of the second conductor (C-); • un deuxième interrupteur formé de deuxièmes transistors alignés (THS), les deuxièmes transistors étant plaqués contre la portion de connexion (P+) du premier conducteur (C+) et connectés électriquement à la deuxième portion de connexion (P2~) du troisième conducteur (C~); • a second switch formed of second aligned transistors (THS), the second transistors being pressed against the connection portion (P+) of the first conductor (C+) and electrically connected to the second connection portion (P2~) of the third conductor (C~); • et entre les premiers transistors (TLS) et les deuxièmes transistors (THS), un circuit de commande de transistors (2). • and between the first transistors (TLS) and the second transistors (THS), a transistor control circuit (2). [Revendication 4] Module de puissance (1) selon la revendication 3, dans lequel les transistors (TLS, THS) d’un interrupteur sont écartés d’une distance (Dt) supérieure à 2mm. [Claim 4] Power module (1) according to claim 3, in which the transistors (TLS, THS) of a switch are spaced apart by a distance (Dt) greater than 2 mm. [Revendication 5] Module de puissance selon l’une des revendications précédentes, dans lequel les portions de connexion (P+, P-, P1~, P2~) planes des conducteurs (C+, C-, C~) s’étendent parallèlement les unes aux autres, et parallèlement au plan du substrat (3). [Claim 5] Power module according to one of the preceding claims, in which the flat connection portions (P+, P-, P1~, P2~) of the conductors (C+, C-, C~) extend parallel to each other, and parallel to the plane of the substrate (3). [Revendication 6] Module de puissance (1) selon l’une des revendications précédentes, dans lequel les portions de liaison (PL+, PL~) des conducteurs (C+, C-, C~) comportent un barreau conducteur (4) comportant une face plane parallèle au plan du substrat (3). [Claim 6] Power module (1) according to one of the preceding claims, in which the connecting portions (PL+, PL~) of the conductors (C+, C-, C~) comprise a conductive bar (4) comprising a flat face parallel to the plane of the substrate (3). [Revendication 7] Module de puissance (1) selon la revendication 6, dans lequel les faces planes des barreaux conducteurs (4) du premier conducteur sont coplanaires et définissent un plan de liaison du premier conducteur (C+). [Claim 7] Power module (1) according to claim 6, in which the flat faces of the conductive bars (4) of the first conductor are coplanar and define a connection plane of the first conductor (C+). [Revendication 8] Module de puissance (1) selon l’une des revendications 6 à 7, dans lequel les faces planes des barreaux conducteurs (4) du troisième conducteur (C~) sont coplanaires et définissent un plan de liaison du troisième conducteur. [Claim 8] Power module (1) according to one of claims 6 to 7, in which the flat faces of the conductive bars (4) of the third conductor (C~) are coplanar and define a connection plane of the third conductor. [Revendication 9] Module de puissance (1) selon les revendications 6 à 8, dans lequel les plans de liaison du premier conducteur (C+) et du troisième conducteur (C~) sont placés plus haut que les faces planes des portions de connexion (P+, P-, P1~, P2~) planes des conducteurs (C+, C-, C~). [Claim 9] Power module (1) according to claims 6 to 8, wherein the connection planes of the first conductor (C+) and the third conductor (C~) are placed higher than the flat faces of the flat connection portions (P+, P-, P1~, P2~) of the conductors (C+, C-, C~). [Revendication 10] Module de puissance (1) selon l’une des revendications précédentes, dans lequel les portions de liaison (PL+, PL~) du premier conducteur (C+) et du troisième conducteur (C~) comprennent chacune au moins un plot conducteur (6), connecté électriquement à un barreau conducteur (4) de la portion de liaison (PL+, PL~) du conducteur d’une part, et à une portion de connexion (P+, P~) du conducteur d’autre part et dans lequel le deuxième conducteur (C-) comprend au moins un plot conducteur (6) disposé entre la borne (B-) du deuxième conducteur et la portion de connexion (P-) et dans lequel le troisième conducteur (C~) comprend au moins un plot conducteur (6) disposé entre la deuxième portion de connexion (P2~) et la borne (B~) du troisième conducteur. [Claim 10] Power module (1) according to one of the preceding claims, in which the connection portions (PL+, PL~) of the first conductor (C+) and of the third conductor (C~) each comprise at least one conductive pad (6), electrically connected to a conductive bar (4) of the connection portion (PL+, PL~) of the conductor on the one hand, and to a connection portion (P+, P~) of the conductor on the other hand and in which the second conductor (C-) comprises at least one conductive pad (6) arranged between the terminal (B-) of the second conductor and the connection portion (P-) and in which the third conductor (C~) comprises at least one conductive pad (6) arranged between the second connection portion (P2~) and the terminal (B~) of the third conductor. [Revendication 11] Module de puissance (1) selon la revendication 10, dans lequel les plots conducteurs (6) sont soudés, notamment par soudure laser, sur les barreaux conducteurs (4) des portions de liaison (PL+, PL~) des conducteurs (C+, C~). [Claim 11] Power module (1) according to claim 10, in which the conductive pads (6) are welded, in particular by laser welding, on the conductive bars (4) of the connecting portions (PL+, PL~) of the conductors (C+, C~). [Revendication 12] Module de puissance (1) selon l’une des revendications 10 à 11 , dans lequel les plots conducteurs (6) sont soudés, brasés ou frittés sur les portions de connexion (P+, P1~, P2~) des conducteurs (C+, C~). [Claim 12] Power module (1) according to one of claims 10 to 11, in which the conductive pads (6) are welded, brazed or sintered on the connection portions (P+, P1~, P2~) of the conductors (C+, C~). [Revendication 13] Module de puissance (1) selon l’une des revendications 10 à 12, dans lequel au moins un des barreaux conducteurs (4) du premier conducteur (C+) et du troisième conducteur (C~) présente une (9), c’est-à-dire une portion d’épaisseur moindre. [Claim 13] Power module (1) according to one of claims 10 to 12, in which at least one of the conductive bars (4) of the first conductor (C+) and of the third conductor (C~) has a (9), that is to say a portion of lesser thickness. [Revendication 14] Module de puissance (1) selon l’une des revendications 10 à 13, dans lequel au moins un barreau conducteur (4) des portions de liaison (PL+, PL~) des conducteurs (C+, C~) comporte au moins une zone de soudure (7), et au moins une zone de maintien (8) arrangée pour permettre le verrouillage en position du barreau conducteur[Claim 14] Power module (1) according to one of claims 10 to 13, in which at least one conductive bar (4) of the connecting portions (PL+, PL~) of the conductors (C+, C~) comprises at least one welding zone (7), and at least one holding zone (8) arranged to allow the conductive bar to be locked in position. (4) lors de l’assemblage du barreau conducteur sur le plot conducteur (6) de la portion de liaison, notamment lors de la soudure du barreau conducteur sur le plot conducteur. (4) when assembling the conductive bar on the conductive pad (6) of the connecting portion, in particular when welding the conductive bar on the conductive pad. [Revendication 15] Module de puissance (1) selon l’une des revendications 10 à 14, dans lequel au moins un barreau conducteur (4) comporte deux zones de maintien (8) périphériques disposées de part et d’autre de la zone de soudure (7) centrale. [Claim 15] Power module (1) according to one of claims 10 to 14, in which at least one conductive bar (4) comprises two peripheral holding zones (8) arranged on either side of the central welding zone (7). [Revendication 16] Module de puissance (1) selon l’une des revendications 10 à 14, dans lequel au moins un barreau conducteur (4) comporte deux zones de soudure (7) périphériques arrangées pour être soudées à deux plots conducteurs (6) adjacents, et situées de part et d’autre d’une zone de maintien centrale (8). [Claim 16] Power module (1) according to one of claims 10 to 14, in which at least one conductive bar (4) comprises two peripheral welding zones (7) arranged to be welded to two adjacent conductive pads (6), and located on either side of a central holding zone (8).
PCT/EP2024/068657 2023-07-04 2024-07-03 Power module WO2025008370A1 (en)

Applications Claiming Priority (4)

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FRFR2307117 2023-07-04
FR2307117A FR3150901B1 (en) 2023-07-04 2023-07-04 Power module
FRFR2309495 2023-09-08
FR2309495A FR3150927A1 (en) 2023-07-04 2023-09-08 Power module

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020106406A1 (en) * 2020-03-10 2021-09-16 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module
US20220302071A1 (en) * 2019-06-20 2022-09-22 Rohm Co., Ltd. Semiconductor device and production method for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220302071A1 (en) * 2019-06-20 2022-09-22 Rohm Co., Ltd. Semiconductor device and production method for semiconductor device
DE102020106406A1 (en) * 2020-03-10 2021-09-16 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module

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