WO2024185261A1 - 発光装置およびその製造方法 - Google Patents

発光装置およびその製造方法 Download PDF

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Publication number
WO2024185261A1
WO2024185261A1 PCT/JP2023/045969 JP2023045969W WO2024185261A1 WO 2024185261 A1 WO2024185261 A1 WO 2024185261A1 JP 2023045969 W JP2023045969 W JP 2023045969W WO 2024185261 A1 WO2024185261 A1 WO 2024185261A1
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Prior art keywords
light
emitting device
layer
electrode
insulating layer
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English (en)
French (fr)
Japanese (ja)
Inventor
宜瑛 田口
健太郎 鈴木
彰宜 馬飼野
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Canon Inc
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Canon Inc
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Publication of WO2024185261A1 publication Critical patent/WO2024185261A1/ja
Priority to US19/311,424 priority Critical patent/US20250380593A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the technology disclosed herein relates to a light-emitting device and a method for manufacturing the same.
  • Patent Document 1 describes a light-emitting device configured to obtain a desired light emission color for each of the B, G, and R pixels by transmitting light emitted from the organic light-emitting element through a color filter.
  • an optical resonance structure is constructed between the power line and the opposing electrode, which function as a reflector for each of the B, G, and R pixels, and light emission with enhanced brightness is obtained at the resonance wavelength corresponding to each of the B, G, and R light-emitting colors.
  • a step occurs between the reflective sections of adjacent organic light-emitting elements due to the reflective sections.
  • This step makes the organic layer thinner and shortens the distance between the first electrode (anode) and the second electrode (cathode), causing leakage current and reducing the luminous efficiency of the organic light-emitting element.
  • an insulating layer must be formed precisely above this step as an optical adjustment layer, so planarization by a method such as CMP (Chemical Mechanical Polishing) is not suitable.
  • the technology disclosed herein has been developed in consideration of the above, and aims to ensure the thickness of the organic layer in the light-emitting device and reduce the leakage current between the first electrode (anode) and the second electrode (cathode).
  • the light-emitting device includes a light-emitting device having a first element and a second element on a substrate, each of the first element and the second element having a reflective portion, a first insulating layer, a first electrode, an organic layer including a light-emitting layer, and a second electrode, in this order from the substrate side, the first insulating layer having a recess between the reflective portion of the first element and the reflective portion of the second element, and a conductor arranged in the recess.
  • the light-emitting device also includes a light-emitting device having a first element and a second element on a substrate, each of the first element and the second element having a reflective portion, a first insulating layer, a first electrode, an organic layer including a light-emitting layer, and a second electrode, in this order from the substrate side, the first insulating layer having a recess between the reflective portion of the first element and the reflective portion of the second element, and a third insulating layer being disposed in a region overlapping with the recess when viewed in a plane of the substrate.
  • the light-emitting device further includes a light-emitting device having a first element and a second element on a substrate, each of the first element and the second element having a reflective portion, a first insulating layer, a first electrode, an organic layer including a light-emitting layer, and a second electrode, in this order from the substrate side, a connection portion electrically connected to the first electrode is disposed between the reflective portion of the first element and the reflective portion of the second element, and a recess is formed in the first electrode.
  • the manufacturing method of the light emitting device includes a manufacturing method of the light emitting device, characterized by having a step of forming a reflective portion of a first element and a reflective portion of a second element on a substrate, a step of forming a first insulating layer of the first element and a second insulating layer of the second element, and forming the first insulating layer of the first element or the second insulating layer of the second element between the reflective portion of the first element and the reflective portion of the second element, a step of forming a first electrode of the first element and a first electrode of the second element, and a step of forming a conductor in the first insulating layer of the first element or the first insulating layer of the second element between the reflective portion of the first element and the reflective portion of the second element.
  • the technology disclosed herein can ensure the thickness of the organic layer of the light-emitting device and reduce leakage current between the first electrode (anode) and the second electrode (cathode).
  • FIG. 1 is a cross-sectional view illustrating an example of a light emitting device according to the first embodiment.
  • FIG. 2 is a plan view illustrating an example of the light emitting device according to the first embodiment.
  • FIG. 3A is a diagram illustrating an example of a manufacturing process of the light emitting device according to the first embodiment.
  • FIG. 3B is a diagram showing a manufacturing process of the light emitting device performed after the process shown in FIG. 3A.
  • FIG. 3C is a diagram showing a manufacturing process of the light emitting device performed after FIG. 3B.
  • FIG. 3D is a diagram showing a manufacturing process of the light emitting device performed after FIG. 3C.
  • FIG. 3E is a diagram showing a manufacturing process of the light emitting device performed after FIG. 3D.
  • FIG. 3A is a diagram illustrating an example of a manufacturing process of the light emitting device according to the first embodiment.
  • FIG. 3B is a diagram showing a manufacturing process of the light emitting device performed
  • FIG. 3F is a diagram showing a manufacturing process of the light emitting device performed after FIG. 3E.
  • FIG. 3G is a diagram showing a manufacturing process of the light emitting device performed after FIG. 3F.
  • FIG. 3H is a diagram showing a manufacturing process of the light emitting device performed after FIG. 3G.
  • FIG. 3I is a diagram showing a manufacturing process of the light emitting device performed after FIG. 3H.
  • FIG. 4 is a cross-sectional view illustrating an example of a light emitting device according to the second embodiment.
  • FIG. 5 is a plan view illustrating an example of the light emitting device according to the second embodiment.
  • FIG. 6 is a cross-sectional view illustrating an example of a light emitting device according to the third embodiment.
  • FIG. 7 is a cross-sectional view illustrating an example of a light emitting device according to the fourth embodiment.
  • FIG. 8 is a plan view illustrating an example of the light emitting device according to the fourth embodiment.
  • FIG. 9 is a cross-sectional view illustrating an example of a light emitting device according to the fifth embodiment.
  • FIG. 10 is a cross-sectional view illustrating an example of a light emitting device according to the sixth embodiment.
  • 11A and 11B are plan views illustrating an example of a light emitting device according to the sixth embodiment.
  • FIG. 12 is a cross-sectional view illustrating an example of a light emitting device according to the seventh embodiment.
  • FIG. 13 is a cross-sectional view illustrating an example of a light emitting device according to the eighth embodiment.
  • FIG. 14 is a plan view illustrating an example of the light emitting device according to the eighth embodiment.
  • 15A to 15C are cross-sectional views showing an example of a light emitting device according to the ninth embodiment.
  • FIG. 16 is a plan view illustrating an example of the light emitting device according to the ninth embodiment.
  • FIG. 17 is a diagram illustrating an example of a display device according to an embodiment.
  • 18A and 18B are diagrams illustrating an example of an imaging device and an electronic device according to an embodiment.
  • 19A and 19B are diagrams illustrating an example of a display device according to an embodiment.
  • 20A and 20B are diagrams illustrating an example of a vehicle having a lighting device and a lamp according to an embodiment.
  • 21A and 21B are diagrams illustrating an example of a wearable device according to one embodiment.
  • FIG. 1 is a schematic cross-sectional view of a light-emitting device 1 according to the first embodiment.
  • a wiring layer (drive circuit layer) 101 is provided on the upper side, which is the first direction side, of a substrate 100, and a first planarization layer 102 is provided on the wiring layer 101.
  • a plurality of organic light-emitting elements 10 and 20 are provided on the first planarization layer 102.
  • the organic light-emitting elements 10 and 20 each have a reflecting portion 104, a first insulating layer 105 as an optical adjustment layer, a first electrode 110 as an anode, a second insulating layer 120, an organic layer 130 including a light-emitting layer, and a second electrode 140 as a cathode, in this order from the substrate side.
  • the wiring layer 101 and the reflecting portion 104 are electrically connected to the wiring layer 101 via a first conductive plug 103.
  • the organic light-emitting element 10 is an example of a first element
  • the organic light-emitting element 20 is an example of a second element.
  • the organic layer 130 has a light-emitting layer, which is common to the multiple organic light-emitting elements 10, 20.
  • the organic layer 130 also includes at least an organic light-emitting material layer.
  • the organic layer 130 may include, for example, a charge transport layer, a charge injection layer, a charge generation layer, etc.
  • the organic layer 130 is formed as a common layer for the multiple organic light-emitting elements 10, 20 without being patterned for each of the organic light-emitting elements 10, 20.
  • the first insulating layer 105 is arranged so as to cover the reflective portion 104.
  • the first insulating layer 105 is arranged between the reflective portions 104, and the first insulating layer 105 has a step portion 180, which is a recess caused by the thickness of the reflective portion 104.
  • a conductor 110a made of the same material as the first electrode 110 is arranged between the adjacent reflective portions 104 on the upper side of the first insulating layer 105.
  • the step portion 180 can be reduced by arranging the conductor 110a on the upper side of the first insulating layer.
  • the organic layer 130 can be prevented from becoming thin, and the leakage current between the first electrode (anode) and the second electrode (cathode) via the charge transport layer, the charge injection layer, or the charge generation layer can be reduced.
  • the above-mentioned components of the organic light-emitting elements 10 and 20 are protected by a moisture-proof layer 150 provided on the second electrode 140.
  • a second planarization layer 160 and a color filter layer 170 are provided on the moisture-proof layer 150.
  • the organic layer 130 may be laminated in multiple layers for each of multiple light-emitting colors.
  • the organic layer 130 is configured to emit white light.
  • the white light emitted from the organic layer 130 of the organic light-emitting elements 10 and 20 is separated into red light, green light, or blue light by transmitting through the color filter layer 170, and is emitted from the organic light-emitting elements 10 and 20.
  • FIG. 2 shows an example of a planar configuration diagram of the first electrode 110 and the conductor 110a between adjacent reflective portions 104 in the light-emitting device 1 according to this embodiment.
  • FIG. 1 is a schematic cross-sectional diagram of the light-emitting device 1 taken along line A-A' in FIG. 2.
  • the reflective portion 104 is disposed on the first planarization layer 102.
  • the reflective portion 104 may have, for example, a hexagonal shape in a planar view of the substrate 100, but may have another polygonal shape or a shape other than a polygon.
  • the first electrode 110 is disposed on the reflective portion 104 for each of the organic light-emitting elements 10 and 20.
  • the first electrode 110 may have, for example, a circular shape in a planar view of the substrate 100, but may have a polygonal shape.
  • the conductor 110a may be disposed between adjacent reflective portions 104, but may be disposed only in a part of the area between the reflective portions 104 in a planar view of the substrate 100, or may be disposed so as to overlap a part of the reflective portion 104.
  • the conductor 110a may be connected to the first electrode 110 if the first electrode 110 is electrically insulated for each of the organic light-emitting elements 10 and 20, the conductor 110a may be connected to the first electrode 110.
  • transistors and capacitors of the driving circuits including the pixel driving circuits are arranged by a known MOS process on a substrate 100, which is, for example, a silicon substrate doped with impurities, to form a wiring layer 101.
  • an insulating film such as an oxide film (SiOx) or an oxynitride film (SiON) is formed on the wiring layer 101 by, for example, a plasma CVD method, a high-density plasma method, or a combination of these manufacturing methods, and the surface including the pixel region is planarized by a CMP method to form a first planarization layer 102.
  • a number of openings are formed at predetermined positions in the first planarization layer 102 by photolithography and dry etching. For example, tungsten (W) is placed in each opening, and excess portions are removed by CMP or etch-back to form first conductive plugs 103 made of a conductive material (tungsten).
  • W tungsten
  • an AlCu film (for example, an Al film to which Cu is added at 0.5 (atm%)) is formed on the first planarization layer 102 by, for example, a sputtering method. Then, the AlCu film is patterned by photolithography and dry etching or wet etching to form a plurality of reflective portions 104.
  • a first insulating layer 105 made of a SiO 2 film is formed by a plasma CVD method.
  • the center portion of the reflective portion 104 may be removed by photolithography and dry etching, and the first insulating layer 105 may be further laminated. This allows the thickness of the first insulating layer 105 to be adjusted for each organic light-emitting element 10, 20 according to the emission color.
  • an opening (contact hole) 105a is formed in the first insulating layer 105 by photolithography and dry etching.
  • a first electrode 110 made of an ITO film or an IZO film is formed by, for example, sputtering.
  • a plurality of first electrodes 110 are formed by patterning the first electrode 110 by photolithography and dry etching.
  • a conductor 110a made of the same material as the first electrode 110 is formed between the reflective portions 104 by patterning.
  • the conductor 110a between the reflective portions 104 the step of the step portion 180 occurring between the adjacent reflective portions 104 can be reduced.
  • the first insulating layer 105 may be over-etched by dry etching, increasing the step between the adjacent reflective films, but by forming the conductor 110a, such a possibility can be reduced.
  • the manufacturing method of the light emitting device 1 of this embodiment differs from the manufacturing method of the conventional light emitting device in that the conductor 110a is formed on the upper side of the first insulating layer 105 by patterning. Therefore, according to this embodiment, it is possible to reduce the step without worrying about a decrease in manufacturing efficiency due to an increase in the number of steps compared to the conventional manufacturing method of the light emitting device. Furthermore, by reducing the step of the step portion 180 between adjacent reflective portions 104, the thickness of the organic layer 130 can be ensured and the occurrence of leakage current between the first electrode 110 and the second electrode 140 can be reduced.
  • a second insulating layer 120 made of a SiO 2 film or a Si 3 N 4 film is formed by, for example, a plasma CVD method so as to cover the first electrodes 110, the conductors 110a, and the first insulating layer 105.
  • the second insulating layer 120 is formed so as to cover the end of the first electrode 110 of the organic light-emitting element 10 and the end of the first electrode 110 of the organic light-emitting element 20.
  • the second insulating layer 120 is patterned by a photolithography method and a dry etching method, and an opening 120a is formed in the second insulating layer 120.
  • FIG. 3H the second insulating layer 120 is patterned by a photolithography method and a dry etching method, and an opening 120a is formed in the second insulating layer 120.
  • an organic layer 130 is formed by sequentially stacking an organic layer having a lower resistance than a light-emitting layer such as a hole injection layer or a hole transport layer, an emitting layer, and an electron transport layer as organic materials constituting the organic light-emitting element, for example, by a vacuum deposition method.
  • a vacuum deposition method for example, a rotary deposition method, a line type deposition method, a transfer type deposition method, etc. can be used.
  • the organic layer 130 may be a hole injection layer, a hole transport layer, a light emitting layer, a charge generating layer, a light emitting layer and an electron transport layer.
  • the second electrode 140 is formed by vacuum deposition without exposing the substrate 100 and each layer formed on the substrate 100 to the atmosphere from the reduced pressure atmosphere.
  • the moisture-proof layer 150 is formed so as to cover the second electrode 140, for example, by plasma CVD, sputtering, ALD, or a combination of these methods.
  • the deposition temperature of the moisture-proof layer 150 is preferably equal to or lower than the decomposition temperature of the organic material constituting the organic layer 130, for example, 120°C or lower.
  • a transparent second planarization layer 160 having flatness is formed on the moisture-proof layer 150.
  • a red filter material is applied on the second planarization layer 160, and the red filter is formed by patterning by photolithography.
  • a green filter and a blue filter are formed in sequence, thereby forming a color filter layer 170 on the second planarization layer 160.
  • the second planarization layer 160 is arranged for the purpose of improving the adhesion between the moisture-proof layer 150 and the color filter layer 170, and is not essential for implementing this embodiment.
  • the terminal extraction pad portion of the display device is patterned into a predetermined shape by photolithography and dry etching.
  • the optical path length from the upper surface of the first electrode 110 to the light emitting position of the light emitting layer in the organic layer 130 is L
  • the following formula (1) holds.
  • L (2m-1) ⁇ ( ⁇ /4)...(1)
  • m is an integer.
  • the optical distance of the organic layer 130 can be optimized so as to satisfy the above formula (1).
  • ⁇ may be the dominant wavelength of the light emitted by the light-emitting layer.
  • ⁇ may be the blue light-emitting wavelength.
  • the dominant wavelength ⁇ may be the wavelength emitted from the organic light-emitting element and extracted to the outside of the organic light-emitting element.
  • the dominant wavelength ⁇ may be the maximum peak wavelength of the light-emitting material of the light-emitting layer.
  • the wavelength ⁇ satisfies the formula (1)
  • the light emitted by the light-emitting layer is intensified, but the light emitted by the light-emitting layer can also be intensified by using a wavelength ⁇ within a range of values shifted by ⁇ /8. That is, in this embodiment, a wavelength ⁇ that satisfies the following formula (2) may be adopted.
  • L (2m-1) ⁇ ( ⁇ /4) ⁇ /8...(2)
  • the thickness of the organic layer 130 can be ensured and the leakage current between the first electrode 110 and the second electrode 140 can be reduced.
  • FIG. 4 shows a schematic cross-sectional view of the light-emitting device 2 according to this embodiment.
  • the substrate 100, wiring layer 101, organic layer 130, second electrode 140, moisture-proof layer 150, second planarization layer 160, and color filter layer 170 of the light-emitting device 2 are omitted from the illustration.
  • FIG. 5 shows an example of a planar configuration diagram of adjacent reflective portions 104, first electrodes 110, and conductors 210a in the light-emitting device 2 according to this embodiment. Note that in FIG. 5, the other components constituting the light-emitting device 2 are omitted from the illustration because they are similar to those of the light-emitting device 1 according to the first embodiment.
  • the conductor 110a is disposed between adjacent reflective portions 104.
  • the conductor 210a is disposed between adjacent reflective portions 104 and so as to overlap with the reflective portions 104 in a plan view of the substrate 100. This makes it possible to more finely process each layer formed by patterning using photolithography on the same plane in the manufacturing method of the light emitting device described with reference to FIGS. 3A to 3I.
  • FIG. 6 shows an example of a plan view of the adjacent reflectors 104, first electrodes 110, and conductors 310a in the light-emitting device 3 according to this embodiment. Note that other components that make up the light-emitting device 3 are similar to those in the light-emitting device 1 according to the first embodiment, and are therefore not shown in FIG. 6.
  • the light-emitting device 3 of this embodiment has organic light-emitting elements 10, 20, and 30.
  • the organic light-emitting element 30 is a third element having, in this order from the substrate side, a reflective portion 104, a first insulating layer 105 as an optical adjustment layer, a first electrode 110 as an anode, a second insulating layer 120, an organic layer 130 including a light-emitting layer, and a second electrode 140 as a cathode.
  • the organic light-emitting elements 10, 20, and 30 are arranged so that a triangle is formed when the centers O1, O2, and O3 of the reflective portions 104 of the organic light-emitting elements 10, 20, and 30 are connected by line segments in a plan view of the substrate 100.
  • the conductor 310a is arranged at the position of the center of gravity G1 of this triangle in a plan view of the substrate 100.
  • the conductor 310a is formed in a region that faces multiple organic light-emitting elements between the reflecting portions 104 and overlaps with the center of gravity G1 of the triangle. Therefore, the region that overlaps with the center of gravity G1 of the triangle is a region that contacts the three reflecting portions 104 of the organic light-emitting elements 10, 20, and 30, and is not a region that contacts only two of the reflecting portions 104 of the organic light-emitting elements 10, 20, and 30.
  • the conductor 310a By forming the conductor 310a in such a region, the step of the step portion formed between the reflecting portions 104 in the light-emitting device 3 can be effectively reduced, and the opening of the pixel using multiple organic light-emitting elements can be prevented from shrinking.
  • FIG. 7 shows a schematic cross-sectional view of the light-emitting device 4 according to this embodiment. Note that in FIG. 7, the substrate 100, wiring layer 101, organic layer 130, second electrode 140, moisture-proof layer 150, second planarization layer 160, and color filter layer 170 of the light-emitting device 4 are omitted. Also, FIG. 8 shows an example of a planar configuration diagram of adjacent reflective portions 104 and first electrodes 410 in the light-emitting device 4 according to this embodiment. Note that in FIG. 8, the other components constituting the light-emitting device 4 are omitted because they are similar to those of the light-emitting device 1 according to the first embodiment.
  • the first electrode 110 of the organic light-emitting element 20 is formed continuously between the reflective portion 104 of the organic light-emitting element 20 and the reflective portion 104 of the adjacent organic light-emitting element 10.
  • the adjacent first electrodes 110 are patterned so as to be electrically insulated between the adjacent reflective portions 104 or at positions overlapping with the reflective portions 104 in a planar view.
  • FIG. 7 is a plan view showing a part of the reflective portion 104 and the first electrode 110.
  • the first electrode 110 covering the vertex where the multiple organic light-emitting elements are gathered between the adjacent reflective portions 104 and the circular first electrode 110 inside the reflective portion 104 are continuously formed.
  • the adjacent first electrodes 110 are patterned so as to be electrically insulated. This eliminates the need to leave space between the first electrode 110 and the conductor 110a as shown in Example 3 (FIG. 5).
  • the step of the step portion 480 formed between the reflective portions 104 can be effectively reduced, and the aperture of the pixel using multiple organic light-emitting elements can be prevented from shrinking.
  • FIG. 9 shows a schematic cross-sectional view of the light-emitting device 5 according to this embodiment. Note that in FIG. 9, the substrate 100, wiring layer 101, organic layer 130, second electrode 140, moisture-proof layer 150, second planarization layer 160, and color filter layer 170 of the light-emitting device 5 are omitted from the illustration.
  • the light emitting device 5 is manufactured using the manufacturing method described with reference to Figures 3A to 3I.
  • a gap 200 is formed between adjacent reflective portions 104 when the first insulating layer 105 is formed.
  • a first electrode 110 is formed in a region overlapping with the gap 500 in a plan view of the substrate 100, that is, in the region above the gap 500 in Figure 9.
  • a conductor 110a may be formed instead of the first electrode 110 in the area overlapping the void 500 in a plan view of the substrate 100.
  • FIG. 10 shows a schematic cross-sectional view of the light-emitting device 6 according to this embodiment. Note that in FIG. 9, the substrate 100, wiring layer 101, organic layer 130, second electrode 140, moisture-proof layer 150, second planarization layer 160, and color filter layer 170 of the light-emitting device 6 are omitted.
  • the light-emitting device 6 is manufactured using the manufacturing method described with reference to Figures 3A to 3I.
  • a first electrode 110 is formed between adjacent reflective portions 104 as shown in Figure 10.
  • a groove 610 for reducing leakage current between adjacent organic light-emitting elements 10, 20 is formed in the second insulating layer 120 by photolithography and dry etching.
  • FIG. 11A shows an example of a plan view of adjacent reflectors 104, a first electrode 110, and a groove 610 in a light-emitting device 6 according to this embodiment. Note that other components constituting the light-emitting device 6 are omitted from FIG. 11 because they are similar to those of the light-emitting device 5 according to the fifth embodiment. As shown in FIG. 11, in a plan view of the substrate 100, the groove 610 is located between adjacent reflectors 104 and in a region overlapping with the first electrode 110.
  • FIG. 11B shows an example of a plan view of the adjacent reflecting portion 104, first electrode 110, and groove 611 in a modified example of the light-emitting device 6. Note that components other than the reflecting portion 104, first electrode 110, and groove 611 in this modified example are the same as those in the light-emitting device 6, and therefore illustration and description are omitted.
  • the groove 611 is formed, for example, in a region overlapping with the reflecting portion 104 of each organic light-emitting element in a plan view of the substrate 100.
  • a conductor 110a may be formed instead of the first electrode 110 in a region overlapping with the void 200.
  • the arrangement of the grooves may be a combination of the arrangements shown in FIG. 11A and FIG. 11B.
  • a groove may be formed in a region overlapping with the first electrode 110 or the conductor 110a in a plan view of the substrate 100.
  • FIG. 12 shows a schematic cross-sectional view of the light-emitting device 7 according to this embodiment. Note that the substrate 100 and wiring layer 101 of the light-emitting device 7 are omitted from FIG. 12.
  • a third planarization layer 720 is disposed on the color filter layer 170, and a light-transmitting microlens 730 is disposed on the third planarization layer 720.
  • the microlens 730 is a convex lens that focuses non-directional light and is disposed in an area that overlaps with the color filter layer 170 in a planar view of the substrate 100.
  • the microlens 730 may be a so-called spherical lens or a so-called aspherical lens.
  • examples of materials that make up the microlens 730 include materials that are light-transmitting and insulating.
  • examples of materials that make up the microlens 730 include silicon-based inorganic materials such as silicon oxide, and resin materials such as acrylic resin.
  • the light emitting device 7 of this embodiment can reduce the step of the step portion 780 between adjacent reflecting portions 104. This allows the second planarization layer 160 to be made thinner, shortening the distance from the organic layer 130 including the light emitting layer to the microlens 730, and improving the viewing angle characteristics of the light emitting device 7.
  • FIG. 13 shows a schematic cross-sectional view of the light-emitting device 8 according to this embodiment. Note that in FIG. 13, the substrate 100, wiring layer 101, organic layer 130, second electrode 140, moisture-proof layer 150, second planarization layer 160, and color filter layer 170 of the light-emitting device 8 are omitted from the illustration.
  • FIG. 14 shows an example of a plan view of the reflecting portion 104, the first electrode 110, and wiring 804a in the light emitting device 8 according to this embodiment. Note that in FIG. 14, the other components that make up the light emitting device 8 are omitted from the illustration because they are similar to those of the light emitting device 1 according to the first embodiment.
  • the reflective portion 104 is provided as a common reflective portion for multiple organic light-emitting elements.
  • the reflective portion 104 is not separated between the organic light-emitting elements, but is disposed across multiple pixels in the pixel array region of the light-emitting device 8.
  • a first electrode 110 is formed in a region that overlaps with the wiring 804a in a plan view of the substrate 100, that is, in the region above the wiring 804a in FIG. 14.
  • a conductor 110a may be formed instead of the first electrode 110 in the region overlapping with the wiring 804a.
  • FIG. 15A shows a schematic cross-sectional view of the light-emitting device 9 according to this embodiment. Note that in FIG. 15A, the substrate 100, wiring layer 101, organic layer 130, second electrode 140, moisture-proof layer 150, second planarization layer 160, and color filter layer 170 of the light-emitting device 9 are omitted from the illustration.
  • a third insulating layer 940 is formed between adjacent reflecting portions 104.
  • the third insulating layer 940 is formed by depositing an insulating layer and patterning it by photolithography and dry etching.
  • the reflective portion 104 is a plan view showing a part of the reflective portion 104, the first electrode 110, and the third insulating layer 940 in the light-emitting device 9.
  • the area facing the multiple organic light-emitting elements tends to be larger than other areas between the adjacent reflective portions 104, and as a result, the step of the step portion formed between the reflective portions 104 may also be larger. Therefore, in this embodiment, as shown in FIG. 16, the third insulating layer 940 is formed in the area facing the multiple organic light-emitting elements between the reflective portions 104.
  • the step of the step portion 980 formed between the reflective portions 104 can be effectively reduced, and the aperture of the pixel using multiple organic light-emitting elements can be prevented from shrinking.
  • the third insulating layer 940 is formed on the first planarization layer 102.
  • the third insulating layer 940 may be formed on the first insulating layer 105 after the first insulating layer 105 is formed (FIG. 15B), or may be formed on the second insulating layer 120 after the second insulating layer 120 is formed (FIG. 15C).
  • the organic light-emitting element used in the light-emitting device of this embodiment is provided by forming an insulating layer, a lower electrode, a functional layer including a light-emitting layer, and an upper electrode on a substrate.
  • a protective layer, a color filter, a microlens, etc. may be provided on the upper electrode.
  • a planarizing layer may be provided between the protective layer.
  • the planarizing layer may be made of acrylic resin or the like. The same applies when a planarizing layer is provided between the color filter and the microlens.
  • the material of the substrate constituting the organic light-emitting element may be at least one of quartz, glass, silicon, resin, and metal.
  • a switching element such as a transistor and wiring may be provided on the substrate, and an insulating layer may be provided thereon.
  • the insulating layer any material can be used as long as it can form a contact hole so that wiring can be formed between the first electrode and the insulating layer, and can ensure insulation from wiring that is not connected.
  • resin such as polyimide, silicon oxide, silicon nitride, etc. can be used.
  • a pair of electrodes can be used for the organic light-emitting element.
  • the pair of electrodes may be an anode and a cathode.
  • the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.
  • the material that constitutes the anode should have as large a work function as possible.
  • metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, or mixtures containing these metals, can be used for the anode.
  • alloys combining these metals, or metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide can be used for the anode.
  • Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used for the anode.
  • the anode may be composed of a single layer or multiple layers.
  • the electrode material can be, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or an alloy or laminate of these. The above materials can also function as a reflective film without acting as an electrode.
  • a transparent conductive layer of oxide such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography technology can be used to form the electrode.
  • the material for the cathode should have a small work function.
  • examples of such materials include alkali metals such as lithium, alkaline earth metals such as calcium, aluminum, titanium, manganese, silver, lead, and chromium, or mixtures containing these metals.
  • alloys combining these metal elements can be used.
  • magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used.
  • Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials can be used alone or in combination of two or more types.
  • the cathode can be a single layer or a multilayer structure.
  • silver is preferably used, and a silver alloy is even more preferable to reduce the aggregation of silver.
  • the ratio of the alloy is not important.
  • the ratio of silver to other metal can be 1:1, 3:1, etc.
  • the cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited.
  • the method for forming the cathode is not particularly limited, but DC and AC sputtering methods are more preferable because they provide good film coverage and make it easier to reduce resistance.
  • the pixel separation layer is formed of a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed by chemical vapor deposition (CVD).
  • SiN silicon nitride
  • SiON silicon oxynitride
  • SiO silicon oxide
  • the organic compound layer, particularly the hole transport layer is thinly formed on the sidewall of the pixel separation layer.
  • the thickness of the sidewall of the pixel separation layer can be thinned by increasing the taper angle of the sidewall of the pixel separation layer or the thickness of the pixel separation layer to increase vignetting during deposition.
  • the sidewall taper angle and film thickness of the pixel separation layer it is preferable to adjust the sidewall taper angle and film thickness of the pixel separation layer to such an extent that no voids are formed in the protective layer formed on top of it. Since no voids are formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration in reliability such as the occurrence of dark spots and poor conductivity of the second electrode can be reduced.
  • the taper angle of the sidewall of the pixel separation layer is not steep.
  • the thickness of the pixel separation layer is preferably 10 nm or more and 150 nm or less. The same effect can also be achieved even if the pixel electrode is composed only of a pixel electrode without a pixel separation layer.
  • the thickness of the pixel electrode half or less than that of the organic layer or to make the edge of the pixel electrode a forward taper of less than 60 degrees, since this reduces short circuits in the organic light-emitting element.
  • the organic compound layer of the organic light-emitting element may be formed as a single layer or multiple layers. When multiple layers are included, they may be called hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, or electron injection layer depending on their functions.
  • the organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms or inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, or the like.
  • the organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.
  • a protective layer may be provided on the second electrode.
  • a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water or the like into the organic compound layer.
  • the cathode may be transported to another chamber without breaking the vacuum, and a silicon nitride film having a thickness of 2 ⁇ m may be formed by the CVD method to form a protective layer.
  • a protective layer may be provided using the atomic deposition method (ALD method) after the film formation by the CVD method.
  • the material of the film by the ALD method is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed by the CVD method on the film formed by the ALD method.
  • the film by the ALD method may have a smaller thickness than the film formed by the CVD method. Specifically, it may be 50% or less, or even 10% or less.
  • a color filter may be provided on the protective layer.
  • a color filter that takes into account the size of the organic light-emitting element may be provided on another substrate and then bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer described above using a photolithography technique.
  • the color filter may be made of a polymer.
  • the organic light-emitting element of the above embodiment may have a planarization layer between the color filter and the protective layer.
  • the planarization layer is provided for the purpose of reducing the unevenness of the lower layer.
  • the planarization layer may be called a resin layer.
  • the planarization layer may be composed of an organic compound, and may be a low molecular weight or a high molecular weight, but is preferably a high molecular weight.
  • the planarization layer may be provided above and below the color filter, and may be made of the same or different materials. Specific examples include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin.
  • the organic light-emitting element of the above embodiment may have an optical member such as a microlens on its light-emitting side.
  • the microlens may be made of acrylic resin, epoxy resin, or the like.
  • the microlens may be intended to increase the amount of light extracted from the organic light-emitting element and control the direction of the extracted light.
  • the microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the tangent and the hemisphere are the vertices of the microlens.
  • the vertex of the microlens can be determined in the same manner in any cross-sectional view. That is, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the tangent and the semicircle are the vertices of the microlens.
  • the midpoint of the microlens can also be defined.
  • a line segment can be imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens.
  • the cross section used to determine the vertex and midpoint may be a cross section perpendicular to the insulating layer.
  • the microlens has a first surface having a convex portion and a second surface opposite the first surface. It is preferable that the second surface is disposed closer to the functional layer than the first surface. To achieve this configuration, it is necessary to form the microlens on the light-emitting element.
  • the functional layer is an organic layer, it is preferable to avoid processes that result in high temperatures during the manufacturing process.
  • the glass transition temperatures of the organic compounds that make up the organic layer are all 100°C or higher, and more preferably 130°C or higher.
  • the organic light-emitting device of the above embodiment may have an opposing substrate on the planarization layer.
  • the opposing substrate is called an opposing substrate because it is provided at a position corresponding to the above-mentioned substrate.
  • the constituent material of the opposing substrate may be the same as that of the above-mentioned substrate.
  • the opposing substrate can be the second substrate.
  • the functional layers including the light-emitting layer constituting the organic light-emitting device of the above embodiment are formed by the method shown below.
  • the organic compound layer constituting the organic light-emitting element of the above embodiment can be formed using a dry process such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Also, instead of a dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).
  • a dry process such as vacuum deposition, ionization deposition, sputtering, plasma, etc.
  • a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).
  • the film can also be formed by combining it with an appropriate binder resin.
  • Binder resins include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, etc. Furthermore, these binder resins may be used alone as homopolymers or copolymers, or two or more types may be mixed and used. Furthermore, known additives such as plasticizers, antioxidants, and ultraviolet absorbers may be used in combination as necessary.
  • the light-emitting device of the above embodiment may have a pixel circuit connected to the organic light-emitting element.
  • the pixel circuit may be an active matrix type that controls the emission of the first organic light-emitting element and the second organic light-emitting element independently.
  • the active matrix type circuit may be voltage programming or current programming.
  • the drive circuit has a pixel circuit for each pixel.
  • the pixel circuit may have an organic light-emitting element, a transistor that controls the emission brightness of the organic light-emitting element, a transistor that controls the emission timing, a capacitance that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without passing through the light-emitting element.
  • the light-emitting device has a display region and a peripheral region arranged around the display region.
  • the display region has a pixel circuit
  • the peripheral region has a display control circuit.
  • the mobility of the transistors constituting the pixel circuit may be smaller than the mobility of the transistors constituting the display control circuit.
  • the slope of the current-voltage characteristics of the transistors constituting the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors constituting the display control circuit. The slope of the current-voltage characteristics can be measured by the so-called Vg-Ig characteristics.
  • the transistors constituting the pixel circuit are transistors connected to a light-emitting element such as a first organic light-emitting element.
  • the organic light-emitting element of the above embodiment has a plurality of pixels.
  • the pixels have sub-pixels that emit different colors from each other.
  • the sub-pixels may have, for example, RGB emission colors.
  • the pixels emit light in an area also called a pixel aperture. This area is the same as the first area.
  • the pixel aperture may be 15 ⁇ m or less, or 5 ⁇ m or more. More specifically, it may be 11 ⁇ m, 9.5 ⁇ m, 7.4 ⁇ m, 6.4 ⁇ m, etc.
  • the distance between the sub-pixels may be 10 ⁇ m or less, or more specifically, it may be 8 ⁇ m, 7.4 ⁇ m, 6.4 ⁇ m.
  • the pixels may have a known arrangement in plan view. For example, they may have a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement.
  • the shape of the subpixels in plan view may be any known shape. For example, a rectangle, a quadrangle such as a diamond, or a hexagon. Note that if the shape of a subpixel is close to a rectangle, it is considered to be included in the rectangle. Therefore, the shape of the subpixel may be a shape that is close to any of the known shapes listed above.
  • a pixel may be constructed by combining the shape of the subpixels and the pixel arrangement.
  • organic light-emitting element can be used as a component of a display device or a lighting device.
  • Other uses of the organic light-emitting element include an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, and a light-emitting device having a white light source and a color filter.
  • the display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.
  • the display unit of the imaging device or inkjet printer may have a touch panel function.
  • the driving method of this touch panel function is not particularly limited and may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method.
  • the display device may also be used in the display unit of a multifunction printer.
  • FIG. 17 is a schematic diagram showing an example of a display device using the light-emitting device according to the above embodiment.
  • the display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009.
  • Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005.
  • Transistors are printed on the circuit board 1007.
  • the battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position even if the display device is a portable device.
  • the display device 1000 may have color filters having red, green, and blue colors.
  • the red, green, and blue colors of the color filters may be arranged in a delta arrangement.
  • the display device 1000 may also be used in the display section of a mobile terminal. In this case, the display device 1000 may have both a display function and an operation function. Examples of mobile terminals include mobile phones such as smartphones, tablets, and head-mounted displays.
  • the display device 1000 may be used as a display unit of an imaging device having an optical unit with multiple lenses and an imaging element that receives light that passes through the optical unit.
  • the imaging device may have a display unit that displays information acquired by the imaging element.
  • the display unit may be a display unit that is exposed to the outside of the imaging device, or a display unit that is located within the viewfinder.
  • the imaging device may be a digital camera or a digital video camera.
  • FIG. 18A shows a schematic diagram of an example of an imaging device using the light-emitting device according to the above embodiment.
  • the imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104.
  • the viewfinder 1101 may have the above-mentioned display device.
  • the display device may display not only the image to be captured, but also environmental information, imaging instructions, etc.
  • the environmental information may include the intensity of external light, the direction of external light, the speed at which the subject moves, the possibility that the subject will be blocked by an obstruction, etc.
  • a display device using the organic light-emitting elements of the above embodiment can be used more preferably than liquid crystal display devices, which require high display speed.
  • the imaging device 1100 has an optical section (not shown).
  • the optical section has multiple lenses, which form an image on an imaging element housed in a housing 1104.
  • the focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.
  • the imaging device may be called a photoelectric conversion device. Rather than capturing images sequentially, photoelectric conversion devices can include imaging methods such as a method of detecting the difference from the previous image and a method of cutting out an image that is constantly recorded.
  • FIG. 18B is a schematic diagram showing an example of an electronic device using the light-emitting device according to the embodiment.
  • the electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203.
  • the housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit.
  • the operation unit 1202 may be a button or a touch panel type reaction unit.
  • the operation unit may be a biometric recognition unit that recognizes a fingerprint and performs unlocking, etc.
  • An electronic device having a communication unit can also be called a communication device.
  • the electronic device 1200 may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a laptop computer.
  • FIG. 19A shows a schematic diagram illustrating an example of a display device using the light-emitting device according to the above embodiment.
  • FIG. 19A shows a display device 1300 such as a television monitor or a PC monitor.
  • the display device 1300 has a frame 1301 and a display unit 1302.
  • the organic light-emitting element according to the above embodiment may be used in the display unit 1302.
  • the display device 1300 also has a frame 1301 and a base 1303 that supports the display unit 1302.
  • the base 1303 is not limited to the form shown in FIG. 19A.
  • the bottom side of the frame 1301 may also serve as the base.
  • the frame 1301 and the display unit 1302 may also be curved.
  • the radius of curvature may be 5000 mm or more and 6000 mm or less.
  • FIG. 19B is a schematic diagram showing another example of a display device using the light-emitting device according to the embodiment described above.
  • the display device 1310 in FIG. 19B is configured to be bendable, and is a so-called foldable display device.
  • the display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314.
  • the first display unit 1311 and the second display unit 1312 may have the organic light-emitting element according to the embodiment described above.
  • the first display unit 1311 and the second display unit 1312 may be a single display unit without a joint.
  • the first display unit 1311 and the second display unit 1312 can be separated by the bending point.
  • the first display unit 1311 and the second display unit 1312 may each display different images, or the first display unit and the second display unit may display a single image.
  • FIG. 20A shows a schematic diagram of an example of a lighting device using the light-emitting device according to the above embodiment.
  • the lighting device 1400 may have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion section 1405.
  • the light source has an organic light-emitting element according to the above embodiment.
  • the optical filter may be a filter that improves the color rendering of the light source.
  • the light diffusion section can effectively diffuse the light of the light source, such as for lighting up, and deliver the light over a wide range.
  • the optical filter and the light diffusion section may be provided on the light emission side of the lighting. If necessary, a cover may be provided on the outermost part.
  • the lighting device 1400 is, for example, a device that illuminates a room.
  • the lighting device may emit white light, daylight white light, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity.
  • the lighting device 1400 may have an organic light-emitting element according to the above embodiment and a power supply circuit connected to it.
  • the power supply circuit is a circuit that converts AC voltage to DC voltage.
  • white has a color temperature of 4200K
  • daylight white has a color temperature of 5000K.
  • the lighting device 1400 may have a color filter.
  • the lighting device 1400 may have a heat dissipation unit.
  • the heat dissipation unit dissipates heat inside the device to the outside of the device, and examples of the heat dissipation unit include metals with high specific heat and liquid silicon.
  • FIG. 20B is a schematic diagram of an automobile, which is an example of a moving body using the light-emitting device according to the embodiment described above.
  • the automobile has tail lamps, which are an example of a lamp.
  • the automobile 1500 has tail lamps 1501, and may be configured to turn on the tail lamps when braking or the like is performed.
  • the tail lamp 1501 has an organic light-emitting element according to the embodiment described above.
  • the tail lamp may have a protective member that protects the organic light-emitting element.
  • the protective member may be made of any material as long as it has a relatively high strength and is transparent, but it is preferable that the protective member is made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.
  • the automobile 1500 may have a body 1503 and a window 1502 attached to it.
  • the window may be a transparent display as long as it is not a window for checking the front and rear of the automobile.
  • the transparent display may have an organic light-emitting element according to the above embodiment. In this case, the constituent materials of the electrodes and the like of the organic light-emitting element are made of transparent materials.
  • Movements using the light-emitting device according to the above embodiment may be ships, aircraft, drones, etc.
  • the moving object may have a body and a lamp provided on the body.
  • the lamp may emit light to indicate the position of the body.
  • the lamp has an organic light-emitting element according to the above embodiment.
  • a display device using the light-emitting device of the above embodiment can be applied to a system that can be attached as a wearable device such as smart glasses, HMD, or smart contacts.
  • An imaging and display device used in such an application example has an imaging device capable of photoelectrically converting visible light, and a display device capable of emitting visible light.
  • FIG. 21A shows glasses 1600 (smart glasses) as an application example of a display device using the light-emitting device of the above embodiment.
  • An imaging device 1602 such as a CMOS sensor or SPAD is provided on the front side of a lens 1601 of the glasses 1600.
  • any of the display devices described above is provided on the back side of the lens 1601.
  • the glasses 1600 further include a control device 1603.
  • the control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device according to each embodiment.
  • the control device 1603 also controls the operation of the image capture device 1602 and the display device.
  • the lens 1601 is formed with an optical system for focusing light on the image capture device 1602.
  • FIG. 21B shows glasses 1610 (smart glasses) according to another application example of the display device using the light-emitting device of the above embodiment.
  • the glasses 1610 have a control device 1612.
  • the control device 1612 is equipped with an imaging device corresponding to the imaging device 1602 and a display device.
  • An optical system for projecting light emitted by the display device in the control device 1612 is formed in the lens 1611, and an image is projected onto the lens 1611.
  • the control device 1612 functions as a power source that supplies power to the imaging device and the display device, and controls the operation of the imaging device and the display device.
  • the control device may have a line-of-sight detection unit that detects the line of sight of the wearer. Infrared light may be used to detect the line of sight.
  • the infrared light emission unit emits infrared light toward the eyeball of a user gazing at a displayed image.
  • An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball.
  • the user's line of sight with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light.
  • Any known method can be used for gaze detection using an image of the eyeball.
  • a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea can be used.
  • gaze detection processing is performed based on the pupil-corneal reflex method.
  • a gaze vector that represents the direction (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image contained in the captured image of the eyeball, thereby detecting the user's gaze.
  • the display device having the organic light-emitting element may have an imaging device having a light-receiving element, and may control the display image of the display device based on user line-of-sight information from the imaging device.
  • the display device determines a first field of view area on which the user gazes and a second field of view area other than the first field of view area based on the line of sight information.
  • the first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received by the display device.
  • the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than the first field of view area.
  • the display area may have a first display area and a second display area different from the first display area, and the display device may select an area with a high priority from the first display area and the second display area based on the line-of-sight information.
  • the first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received by the display device.
  • the display device may control the resolution of the high priority area to be higher than the resolution of areas other than the high priority area. In other words, the display device may lower the resolution of an area with a relatively low priority.
  • the display device may use AI (Artificial Intelligence) to determine the first field of view area and the high priority area.
  • the AI may be a model configured to estimate the angle of gaze and the distance to the object in the line of sight from the image of the eyeball, using as teacher data an image of the eyeball and the direction in which the eyeball in the image was actually looking.
  • the AI program may be possessed by the display device, the imaging device, or an external device. If the external device has the AI program, the AI program is transmitted from the external device to the display device via communication.
  • the display device controls the display based on visual detection
  • the display device can be preferably applied to smart glasses that further include an imaging device that captures images of the outside world.
  • the smart glasses can display captured external information in real time.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
PCT/JP2023/045969 2023-03-09 2023-12-21 発光装置およびその製造方法 Ceased WO2024185261A1 (ja)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175165A (ja) * 2013-03-08 2014-09-22 Semiconductor Energy Lab Co Ltd 発光装置
JP2021072282A (ja) * 2019-10-28 2021-05-06 キヤノン株式会社 有機デバイス、その製造方法、表示装置、光電変換装置、電子機器、照明装置および移動体
JP2022054048A (ja) * 2020-09-25 2022-04-06 ソニーセミコンダクタソリューションズ株式会社 表示装置および電子機器
WO2022131255A1 (ja) * 2020-12-18 2022-06-23 ソニーセミコンダクタソリューションズ株式会社 表示装置及び電子機器
WO2022138828A1 (ja) * 2020-12-25 2022-06-30 ソニーセミコンダクタソリューションズ株式会社 表示装置および電子機器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175165A (ja) * 2013-03-08 2014-09-22 Semiconductor Energy Lab Co Ltd 発光装置
JP2021072282A (ja) * 2019-10-28 2021-05-06 キヤノン株式会社 有機デバイス、その製造方法、表示装置、光電変換装置、電子機器、照明装置および移動体
JP2022054048A (ja) * 2020-09-25 2022-04-06 ソニーセミコンダクタソリューションズ株式会社 表示装置および電子機器
WO2022131255A1 (ja) * 2020-12-18 2022-06-23 ソニーセミコンダクタソリューションズ株式会社 表示装置及び電子機器
WO2022138828A1 (ja) * 2020-12-25 2022-06-30 ソニーセミコンダクタソリューションズ株式会社 表示装置および電子機器

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