WO2024142722A1 - 研磨剤、研磨方法、半導体部品の製造方法、及び研磨用添加液 - Google Patents

研磨剤、研磨方法、半導体部品の製造方法、及び研磨用添加液 Download PDF

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Publication number
WO2024142722A1
WO2024142722A1 PCT/JP2023/042574 JP2023042574W WO2024142722A1 WO 2024142722 A1 WO2024142722 A1 WO 2024142722A1 JP 2023042574 W JP2023042574 W JP 2023042574W WO 2024142722 A1 WO2024142722 A1 WO 2024142722A1
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WIPO (PCT)
Prior art keywords
polishing
group
water
abrasive
soluble polymer
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PCT/JP2023/042574
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English (en)
French (fr)
Japanese (ja)
Inventor
正敏 赤時
靖久 野沢
敦義 竹中
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AGC Inc
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Asahi Glass Co Ltd
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Priority to JP2024567324A priority Critical patent/JPWO2024142722A1/ja
Publication of WO2024142722A1 publication Critical patent/WO2024142722A1/ja
Priority to US19/248,987 priority patent/US20250368860A1/en
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Definitions

  • the present invention relates to an abrasive, a polishing method, a method for manufacturing semiconductor parts, and an additive liquid for polishing.
  • CMP chemical mechanical planarization
  • STI shallow trench isolation method
  • Patent Document 1 discloses an abrasive that contains a specific water-soluble polymer, cerium oxide particles, and water and has a pH of 4 to 9 as a method for increasing the selectivity between silicon dioxide and silicon nitride films.
  • the present disclosure provides a polishing agent, a polishing method, a method for manufacturing a semiconductor component, and a polishing additive liquid having the following configurations [1] to [15].
  • [1] Abrasive grains, a water-soluble polymer, and water, the water-soluble polymer is a block copolymer containing a hydrophobic monomer and an anionic monomer; A polishing agent, wherein the content of the hydrophobic monomer in the water-soluble polymer is 50 mol % or more.
  • a method for producing a semiconductor component comprising: obtaining a semiconductor component by dicing a semiconductor substrate having a surface to be polished by the polishing method according to [13] into individual pieces.
  • a composition comprising a water-soluble polymer and water, the water-soluble polymer is a block copolymer containing a hydrophobic monomer and an anionic monomer; The content of the hydrophobic monomer in the water-soluble polymer is 50 mol % or more.
  • the present disclosure provides an abrasive that can obtain a high selectivity between a silicon oxide film and a stopper film while maintaining the polishing speed of the silicon oxide film, an additive liquid for the abrasive used in preparing the abrasive, a polishing method that allows high-speed polishing, and a method for manufacturing semiconductor components using the polishing method.
  • FIG. 1 is a cross-sectional view showing an example of a polishing method, illustrating a state of an object to be polished before being polished.
  • FIG. 1 is a cross-sectional view showing an example of a polishing method, illustrating a state of an object to be polished after being polished.
  • FIG. 1 is a schematic diagram showing an example of a polishing apparatus.
  • the term "surface to be polished” refers to the surface to be polished of an object to be polished, for example, the surface.
  • the term “surface to be polished” also includes intermediate surfaces that appear on a semiconductor substrate during the process of manufacturing a semiconductor device.
  • Silicon oxide is primarily silicon dioxide, but is not limited thereto, and may include silicon oxides other than silicon dioxide.
  • the "selectivity ratio” refers to the ratio ( RA / RB) of the polishing rate ( RA ) of an object to be polished A (eg, a silicon oxide film) to the polishing rate ( RB ) of a stopper film B (eg, a silicon nitride film).
  • the polishing agent of the present invention contains abrasive grains, a water-soluble polymer, and water, the water-soluble polymer is a block copolymer containing a hydrophobic monomer and an anionic monomer, and the content of the hydrophobic monomer in the water-soluble polymer is 50 mol % or more.
  • the polymer is a block copolymer, and has a block of anionic monomers (hereinafter also referred to as anionic block) and a hydrophobic block (hereinafter also referred to as hydrophobic block).
  • anionic block a block of anionic monomers
  • hydrophobic block a hydrophobic block
  • the anionic block of the polymer is strongly adsorbed onto the stopper film and acts as a protective film for the stopper film during polishing.
  • the hydrophobic block does not adsorb onto the surface to be polished, and forms an aggregate with the hydrophobic block of another polymer in the solvent water due to hydrophobic interaction.
  • a higher-order structure is formed on the stopper film by the hydrophobic blocks of multiple polymers, improving the protective performance of the stopper film.
  • the stopper film include compounds containing one or more selected from silicon, carbon, hafnium, zirconium, cobalt, ruthenium, molybdenum, titanium, tantalum, and copper, or nitrides or oxides containing one or more of these.
  • examples include simple metals such as copper, cobalt, ruthenium, molybdenum, titanium, and tantalum; nitrides such as titanium nitride, tantalum nitride, and silicon nitride; oxides such as zirconia and hafnium oxide; polysilicon, amorphous silicon, hafnium silicate, zirconium silicate, and silicon carbide.
  • silicon nitride or polysilicon is preferable because a higher selectivity can be obtained.
  • This abrasive contains at least abrasive grains, a water-soluble polymer, and water, and may contain other components as long as the effects of the present invention are achieved. Each component that may be contained in this abrasive is described below.
  • the abrasive grains can be appropriately selected from those used as abrasive grains for CMP.
  • the abrasive grains can be selected from at least one of the group consisting of silica grains, alumina grains, zirconia grains, cerium compound grains (e.g., ceria grains, cerium hydroxide grains), titania grains, germania grains, and core-shell grains having these grains as core grains.
  • the silica grains can be colloidal silica, fumed silica, etc.
  • the alumina grains can also be colloidal alumina.
  • the particle diameter of the core particle is preferably 0.01 ⁇ m to 0.5 ⁇ m, and more preferably 0.03 ⁇ m to 0.3 ⁇ m.
  • the particle size of the nanoparticles need only be smaller than the particle size of the core particle, and is preferably 1 nm to 100 nm, and more preferably 5 nm to 80 nm.
  • the average particle size of the abrasive grains is preferably 0.01 ⁇ m to 0.5 ⁇ m, more preferably 0.03 ⁇ m to 0.3 ⁇ m. If the average particle size is 0.5 ⁇ m or less, the mechanical action on the polished surface is small, so that the occurrence of polishing damage such as scratches on the polished surface is suppressed. In addition, if the average particle size is 0.01 ⁇ m or more, the aggregation of the abrasive grains is suppressed, and the storage stability of the polishing agent is excellent, and the polishing speed is also excellent. In addition, since the abrasive grains exist in the liquid as aggregated particles (secondary particles) formed by aggregation of primary particles, the above average particle size is the average secondary particle size. The average secondary particle size is measured using a particle size distribution analyzer such as a laser diffraction/scattering type, using a dispersion liquid in which the abrasive grains are dispersed in a dispersion medium such as pure water.
  • the water-soluble polymer is a block copolymer containing a hydrophobic monomer and an anionic monomer, and the content of the hydrophobic monomer in the water-soluble polymer is 50 mol % or more.
  • the water-soluble polymer contains at least a hydrophobic block containing a structural unit derived from a hydrophobic monomer and an anionic block containing a structural unit derived from an anionic monomer, and may further contain other structural units as long as the effects of the present invention are achieved.
  • R 11 is a hydrophobic substituent, which may have O or Si between carbon atoms, and is a hydrocarbon group in which a hydrogen atom may be substituted with a halogen atom.
  • the hydrocarbon group in R 11 include an alkyl group, an aryl group, and an aralkyl group.
  • the alkyl group may be linear, branched, or cyclic.
  • the number of carbon atoms in the alkyl group is preferably 1 to 18, and more preferably 1 to 12.
  • alkyl group examples include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, various pentyl groups, various hexyl groups, various octyl groups, various decyl groups, a cyclopentyl group, a cyclohexyl group, a cyclooctyl group, a cyclododecyl group, a bornyl group, and an adamantyl group.
  • a hydrogen atom of the aromatic ring may have a substituent such as a linear or branched alkyl group having 1 to 4 carbon atoms.
  • the hydrocarbon group for R 11 may further have O or Si between carbon atoms, and a hydrogen atom may be substituted with a halogen atom.
  • Examples of the hydrocarbon group having O or Si between carbon atoms include alkylene oxides such as -( CH2CH2O ) x - CH2CH3 and -( CH2O ) x - CH3 , and -CH2Si ( R12 ) 2 - CH3 , where x represents the number of repeating units and is preferably an integer of 1 to 18.
  • the group having an anionic group or the like in R 2 to R 5 preferably has a structure of -L 2 -R 21 .
  • L 2 is a single bond or a divalent linking group connecting the unsaturated double bond and R 21.
  • Examples of L 2 include an alkylene group having 1 to 8 carbon atoms, a phenylene group, -(CH 2 CH 2 O) x -R 22 -, -(CH 2 O) x -R 22 -, -CONH-R 22 -, and -COO-R 22 -, where x is an integer of 1 to 18, and R 22 is preferably a single bond or an alkylene group having 1 to 8 carbon atoms.
  • R 21 is a carboxy group, a sulfo group, a phosphate ester, a phosphonic acid, a hydroxyphenyl group, and salts thereof.
  • the anionic group is a salt
  • examples of the counter cation include an alkali metal ion, an alkaline earth metal ion, and an ammonium ion.
  • the anionic group for R 21 is preferably a carboxy group, a sulfo group or a salt thereof, and more preferably a carboxy group or a salt thereof.
  • the number of anionic groups in one molecule of the anionic monomer may be one or more, and from the viewpoint of the polymerizability of the polymer, one to two is preferable.
  • the carboxy groups may be in the form of anhydrides.
  • Suitable combinations of R 2 to R 5 in formula (2) include (I) a combination in which R 2 is a group having an anionic group or the like, and R 3 to R 5 are each independently a hydrogen atom or a hydrocarbon group; (II) a combination in which R 2 and R 3 are a group having an anionic group or the like, and R 4 and R 5 are each independently a hydrogen atom or a hydrocarbon group; and (III) a combination in which R 2 and R 5 are a group having an anionic group or the like, and R 3 and R 4 are each independently a hydrogen atom or a hydrocarbon group.
  • the hydrocarbon group is preferably a methyl group.
  • the anionic group is preferably a carboxy group.
  • anionic monomer examples include (meth)acrylic acid, vinyl benzoic acid, 2-carboxyethyl (meth)acrylate, allylsulfonic acid, methallylsulfonic acid, 2-(meth)acryloyloxyethyl acid phosphate, maleic acid (maleic anhydride), fumaric acid, itaconic acid, citraconic acid, and mesaconic acid.
  • (meth)acrylic acid, maleic acid, itaconic acid, or fumaric acid is preferable, and (meth)acrylic acid or maleic acid is more preferable.
  • the anionic monomers can be used alone or in combination of two or more.
  • the content of the hydrophobic monomer is 50 mol% or more, preferably 55 mol% or more, and more preferably 60 mol% or more, based on the total of all monomers.
  • the content of the hydrophobic monomer is 98 mol% or less, more preferably 96 mol% or less, even more preferably 94 mol% or less, particularly preferably 92 mol% or less, and extremely preferably 90 mol% or less, based on the total of all monomers.
  • the water-soluble polymer is a block copolymer having the hydrophobic block (A) and the anionic block (B).
  • A-B type block copolymer, an A-B-A type block copolymer or a B-A-B type block copolymer is preferable, and an A-B type block copolymer or an A-B-A type block copolymer is more preferable.
  • the arrangement of the two or more types of hydrophobic monomers in the hydrophobic block is not particularly limited, and may be random or in a block.
  • the arrangement of the two or more kinds of anionic monomers in the anionic block is not particularly limited, and may be random or in a block.
  • the weight average molecular weight Mw of the water-soluble polymer is not particularly limited, but from the viewpoint of dispersion stability, it is preferably from 2,000 to 50,000, more preferably from 2,500 to 40,000, and even more preferably from 3,000 to 30,000.
  • the weight average molecular weight (Mw) is determined by gel permeation chromatography (GPC) in terms of standard polystyrene.
  • the water-soluble polymer may be a commercially available product or may be synthesized.
  • a block copolymer may be produced by synthesizing an anionic block first and polymerizing a hydrophobic monomer onto the anionic block.
  • the order of polymerization of the anionic block and the hydrophobic block may be reversed.
  • the anionic block and the hydrophobic block may be synthesized separately and then coupled to each other.
  • the content of the water-soluble polymer is preferably 0.001% by mass to 1.0% by mass, more preferably 0.005% by mass to 0.8% by mass, even more preferably 0.01% by mass to 0.6% by mass, and particularly preferably 0.05% by mass to 0.2% by mass, based on the total mass of the abrasive, in terms of the polishing suppression effect of the stopper film.
  • the polishing agent contains water as a medium for dispersing the abrasive grains.
  • the type of water is not particularly limited, but it is preferable to use pure water, ultrapure water, ion-exchanged water, etc., taking into consideration the effect on other components, the prevention of impurities from being mixed in, and the effect on pH, etc.
  • the polishing agent may further contain various additives, such as a pH adjuster, a dispersant, a water-soluble polymer, an anti-aggregating agent, a lubricant, a viscosity imparting agent, a viscosity modifier, and a preservative, and may contain two or more kinds of additives.
  • various additives such as a pH adjuster, a dispersant, a water-soluble polymer, an anti-aggregating agent, a lubricant, a viscosity imparting agent, a viscosity modifier, and a preservative, and may contain two or more kinds of additives.
  • pH adjuster In order to adjust the pH to a predetermined value, a pH adjuster may be contained.
  • the pH adjuster may be appropriately selected from acidic compounds, basic compounds, amphoteric compounds such as amino acids, and salts thereof.
  • the acidic compound may be an inorganic acid, an organic acid, or a salt thereof.
  • the inorganic acid include nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, etc., and the ammonium salt, sodium salt, potassium salt, etc. of these may also be used.
  • the organic acid include compounds having a carboxy group, a sulfo group, or a phospho group as an anionic group, and ammonium salts, sodium salts, potassium salts, and the like of these.
  • organic acids having a carboxy group examples include alkyl monocarboxylic acids such as formic acid, acetic acid, and propionic acid; Carboxylic acids having a heterocycle, such as 2-pyridinecarboxylic acid, 3-pyridinecarboxylic acid, 4-pyridinecarboxylic acid, 2,3-pyridinedicarboxylic acid, 2,4-pyridinedicarboxylic acid, 2,5-pyridinedicarboxylic acid, 2,6-pyridinedicarboxylic acid, 3,4-pyridinedicarboxylic acid, 3,5-pyridinedicarboxylic acid, pyrazinecarboxylic acid, 2,3-pyrazinedicarboxylic acid, 2-quinolinecarboxylic acid, pyroglutamic acid, picolinic acid, DL-pipecolic acid, 2-furancarboxylic acid, 3-furancarboxylic acid, tetrahydrofuran-2-carboxylic acid, and tetrahydrofuran-2,3,4,5-tetracar
  • inorganic acids are preferred, and among these, nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, and their ammonium salts, sodium salts, and potassium salts are preferred.
  • Examples of basic compounds include ammonia, sodium hydroxide, potassium hydroxide, ammonium hydroxide, potassium carbonate, sodium carbonate, ammonium carbonate; quaternary ammonium hydroxides such as tetramethylammonium hydroxide and tetraethylammonium hydroxide; and amino alcohols such as monoethanolamine, diethanolamine, and triethanolamine.
  • Examples of amphoteric compounds include glycine, alanine, and phenylalanine.
  • the pH adjuster can be used alone or in combination of two or more.
  • the pH of this polishing agent is 2 to 13.
  • the lower limit of the pH is preferably 2.5, more preferably 4, even more preferably 5, and particularly preferably 6.
  • the upper limit of the pH is preferably 12, more preferably 11, even more preferably 10, particularly preferably 9, and extremely preferably 8.5.
  • the content of the pH adjuster may be appropriately adjusted to the above pH range.
  • the content may be 0.005% by mass to 2.0% by mass, preferably 0.01% by mass to 1.5% by mass, and more preferably 0.01% by mass to 0.3% by mass, based on the total mass of the polishing agent.
  • the polishing agent may contain a dispersant to improve the dispersibility of the abrasive grains.
  • the dispersant include anionic surfactants, cationic surfactants, nonionic surfactants, and amphoteric surfactants, and one or more of these may be used.
  • anionic surfactant a polymer having a carboxy group or an ammonium carboxylate or the like is preferred, and polyacrylic acid or a polyacrylate is preferred.
  • cationic surfactant examples include diallyldimethylammonium chloride polymer, diallyldimethylammonium chloride-sulfur dioxide copolymer, diallyldimethylammonium chloride-acrylamide copolymer, diallyldimethylammonium chloride-maleic acid copolymer, and maleic acid-diallyldimethylammonium ethyl sulfate-sulfur dioxide copolymer.
  • the weight average molecular weight of the surfactant is preferably 10,000 to 100,000 from the viewpoint of polishing the surface to be polished at a higher speed.
  • a dispersant When a dispersant is used, its content is preferably 0.0001% by mass to 0.3% by mass, more preferably 0.001% by mass to 0.2% by mass, and even more preferably 0.01% by mass to 0.15% by mass, based on the total mass of the abrasive, from the viewpoint of polishing the surface to be polished at a higher speed.
  • the polishing agent may also contain a lubricant.
  • the lubricant is used as necessary to improve the lubricity of the polishing agent and improve the in-plane uniformity of the polishing rate, and examples of the lubricant include water-soluble polymers such as polyethylene glycol and polyglycerin.
  • the total content of the additives is preferably 0.01% by mass to 10.0% by mass, and more preferably 0.01% by mass to 5.0% by mass, based on the total mass of the polishing agent, in order to obtain a polishing agent with a high selectivity between the silicon oxide film and the stopper film.
  • the method for preparing the polishing agent of the present invention may be appropriately selected from methods which uniformly disperse or dissolve the abrasive grains, the water-soluble polymer, and each of the other components used as required in the medium, water.
  • the dispersion and the additive for polishing agent are excellent in storage stability and transportation convenience.
  • the present polishing agent is preferably prepared just before use by carrying out the above-mentioned mixing in a polishing apparatus.
  • the concentration of the abrasive grains in the dispersion liquid and the concentration of the water-soluble nitrogen-containing compound in the additive liquid are both concentrated 10 times, 10 parts by mass of the dispersion liquid, 10 parts by mass of the additive liquid, and 80 parts by mass of water are mixed and stirred to prepare the abrasive.
  • polishing additive liquid By adding the above-mentioned polishing additive liquid to the dispersion of abrasive grains, it is possible to obtain an abrasive that can maintain a high polishing rate for the silicon oxide film while keeping the polishing rate for the stopper film low, thereby achieving a high selectivity and flatness.
  • the content (concentration) of the water-soluble polymer is preferably 0.001 to 30% by mass, more preferably 0.01 to 20% by mass, and even more preferably 0.1 to 10% by mass, of the entire additive liquid.
  • the content of the abrasive grains is preferably 0.2 to 40 mass %, more preferably 1 to 20 mass %, and even more preferably 5 to 10 mass %.
  • the polishing method of the present invention is a polishing method in which a surface to be polished is brought into contact with a polishing pad while an abrasive is supplied, and polishing is performed by relative movement of the two, and the polishing method uses the abrasive of the present invention as the abrasive, and polishes a surface to be polished containing silicon oxide of a semiconductor substrate.
  • the surface to be polished here includes, for example, a surface of a semiconductor substrate that includes a surface made of silicon dioxide, a blanket wafer in which a stopper film and a silicon oxide film are laminated on the surface of a semiconductor substrate, and a pattern wafer in which these film types are arranged in a pattern.
  • a preferred example of a semiconductor substrate is a substrate for STI.
  • the abrasive of the present invention is also effective for polishing to flatten an interlayer insulating film between multiple wiring layers in the manufacture of semiconductor devices.
  • the silicon oxide film in the STI substrate is a so-called PE-TEOS film formed by plasma CVD using tetraethoxysilane (TEOS) as a raw material.
  • TEOS tetraethoxysilane
  • Another silicon oxide film is a so-called HDP film formed by high-density plasma CVD.
  • Other CVD methods such as HARP and FCVD films, and SOD films formed by spin coating can also be used.
  • Silicon nitride films include those formed by low-pressure CVD or plasma CVD using silane or dichlorosilane and ammonia as raw materials, or those formed by ALD.
  • Polysilicon films are formed by using silane as a raw material using low-pressure CVD or plasma CVD, and then heat-treated to form polycrystalline granules.
  • This polishing method makes it possible to obtain a high selectivity between the silicon oxide film and the stopper film while suppressing polishing scratches, thereby achieving highly flat polishing.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PCT/JP2023/042574 2022-12-27 2023-11-28 研磨剤、研磨方法、半導体部品の製造方法、及び研磨用添加液 Ceased WO2024142722A1 (ja)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025023040A1 (ja) * 2023-07-21 2025-01-30 Ａｇｃ株式会社 研磨剤及びその製造方法、研磨剤用添加液の製造方法、研磨方法、並びに、半導体部品の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013137220A1 (ja) * 2012-03-14 2013-09-19 日立化成株式会社 研磨方法
JP2017149798A (ja) * 2016-02-22 2017-08-31 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
WO2021131198A1 (ja) * 2019-12-27 2021-07-01 東亞合成株式会社 分散剤及び研磨剤組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
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WO2013137220A1 (ja) * 2012-03-14 2013-09-19 日立化成株式会社 研磨方法
JP2017149798A (ja) * 2016-02-22 2017-08-31 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
WO2021131198A1 (ja) * 2019-12-27 2021-07-01 東亞合成株式会社 分散剤及び研磨剤組成物

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