WO2024141881A1 - 発光デバイスおよび発光デバイスの作製方法 - Google Patents

発光デバイスおよび発光デバイスの作製方法 Download PDF

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WO2024141881A1
WO2024141881A1 PCT/IB2023/063059 IB2023063059W WO2024141881A1 WO 2024141881 A1 WO2024141881 A1 WO 2024141881A1 IB 2023063059 W IB2023063059 W IB 2023063059W WO 2024141881 A1 WO2024141881 A1 WO 2024141881A1
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organic compound
light
emitting device
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French (fr)
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瀬尾広美
佐々木俊毅
大澤信晴
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to KR1020257019151A priority patent/KR20250129629A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers

Definitions

  • One aspect of the present invention relates to an organic compound, a light-emitting device, a light-emitting apparatus, a light-receiving/light-emitting apparatus, a display device, an electronic device, a lighting apparatus, and an electronic device.
  • a light-emitting device a light-emitting apparatus
  • a light-receiving/light-emitting apparatus a display device
  • an electronic device a lighting apparatus, and an electronic device.
  • one aspect of the present invention is not limited to the above technical field.
  • the technical field of one aspect of the invention disclosed in this specification etc. relates to an object, a method, or a manufacturing method.
  • one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter.
  • examples of the technical field of one aspect of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, a driving method thereof, or a manufacturing method thereof.
  • Light-emitting devices that utilize electroluminescence (EL) using organic compounds are becoming more and more practical.
  • the basic structure of these light-emitting devices is a pair of electrodes sandwiching an organic compound layer (EL layer) containing a light-emitting material between them. By applying a voltage to this element, carriers are injected, and the recombination energy of the carriers is utilized to emit light from the light-emitting material.
  • these light-emitting devices can form the light-emitting layer continuously in two dimensions, making it possible to obtain surface-like light emission. This is a feature that is difficult to obtain with point light sources such as incandescent light bulbs and LEDs, or linear light sources such as fluorescent lamps, making them highly useful as surface light sources for lighting applications, etc.
  • Non-Patent Document 1 discloses a method for manufacturing an organic optoelectronic device using standard UV photolithography (Non-Patent Document 1).
  • Another aspect of the present invention is a light-emitting device having an organic compound layer between a first electrode and a second electrode, the organic compound layer having a first light-emitting unit, a second light-emitting unit, and an intermediate layer, the intermediate layer having a first mixed layer containing a first organic compound and a second organic compound, a second mixed layer containing a third organic compound and an electron donor for the third organic compound, and a third layer containing a fourth organic compound and an electron acceptor for the fourth organic compound, the first organic compound having a strong basicity of pKa 8 or more, the second organic compound and the third organic compound having electron transport properties, and the fourth organic compound having hole transport properties.
  • the second organic compound and the third organic compound may be made of different materials, but are preferably made of the same material.
  • the first mixed layer may be provided on the first electrode side
  • the second mixed layer may be provided on the second electrode side.
  • the second mixed layer may be provided between the first mixed layer and the third layer. It is also preferable that the first mixed layer and the second mixed layer are in contact with each other.
  • the second organic compound and the third organic compound may each be a ⁇ -electron deficient heteroaromatic ring.
  • the fourth organic compound may be at least one of a ⁇ -electron rich heteroaromatic ring and an aromatic amine.
  • the first organic compound has a higher LUMO level than the second organic compound.
  • the first organic compound has a LUMO level that is 0.05 eV or more higher than the second organic compound.
  • the first organic compound has a higher HOMO level than the second organic compound.
  • the first organic compound has a HOMO level that is 0.05 eV or more higher than the second organic compound.
  • the first organic compound has a higher LUMO level than the second organic compound and a higher HOMO level than the second organic compound.
  • the first organic compound has a LUMO level that is 0.05 eV or more higher than the second organic compound and a HOMO level that is 0.05 eV or more higher than the second organic compound.
  • the LUMO level of the first organic compound is -2.50 eV or more and -1.00 eV or less.
  • Another aspect of the present invention is a method for producing a light-emitting device, which comprises forming a first electrode that functions as an anode, forming a first light-emitting unit including a first light-emitting layer on the first electrode, forming an intermediate layer on the first light-emitting unit, the intermediate layer including a first mixed layer including a first organic compound having a strong basicity of pKa 8 or more and a second organic compound having electron transport properties, and a second mixed layer including a third organic compound having electron transport properties and an electron donor for the third organic compound, forming a second light-emitting unit including a second light-emitting layer on the intermediate layer, processing the first light-emitting unit, the intermediate layer, and the second light-emitting unit into a shape that covers at least a part of the first electrode using a photolithography method, and forming a second electrode that functions as a cathode on the second light-emitting unit.
  • the first mixed layer may be formed on the first electrode side, and the second mixed layer may be formed on the second electrode side.
  • the intermediate layer may have a charge generating layer.
  • a light-emitting device (also referred to as a "light-emitting element”) has an EL layer between a pair of electrodes.
  • the EL layer has at least a light-emitting layer.
  • a light-receiving device (also referred to as a "light-receiving element”) has at least an active layer that functions as a photoelectric conversion layer between a pair of electrodes.
  • one of the pair of electrodes may be referred to as a pixel electrode, and the other as a common electrode.
  • film and layer can be interchangeable depending on the circumstances.
  • the term “organic compound layer” can be changed to the term “organic compound film.”
  • the term “organic compound film” can be changed to the term “organic compound layer.”
  • FIG. 1A shows a light-emitting device 130 according to one embodiment of the present invention.
  • the light-emitting device according to one embodiment of the present invention is a tandem light-emitting device having an organic compound layer 103 having a first light-emitting unit 501 including a first light-emitting layer 113_1, a second light-emitting unit 502 including a second light-emitting layer 113_2, and an intermediate layer 116 between a first electrode 101 including an anode and a second electrode 102 including a cathode (note that the light-emitting unit is also referred to as an "EL layer").
  • the color gamut of the light emitted by the light-emitting layer in each light-emitting unit may be the same or different.
  • the light-emitting layer may be a single layer or a laminated structure.
  • white light can be obtained by configuring the first light-emitting unit and the third light-emitting unit to emit light in the blue region, and the second light-emitting unit to emit light in the red region and the green region from the laminated light-emitting layer.
  • the probability of carrier recombination in the second electron injection buffer layer 119b and the charge generation layer 117 can be reduced. Therefore, even if the charge generation capability of the second electron injection buffer layer 119b is reduced by the photolithography process, the light emission efficiency is not reduced, and a light emitting device with good characteristics can be realized.
  • the first electron injection buffer layer 119a and the second electron injection buffer layer 119b are provided in contact with each other, since this enhances the above-mentioned effect.
  • the first electron injection buffer layer 119a may be a mixed layer containing at least two types of organic compounds, a first organic compound having strong basicity (preferably an acid dissociation constant pKa of 8 or more) and a second organic compound having electron transport properties.
  • a first organic compound having strong basicity preferably an acid dissociation constant pKa of 8 or more
  • a second organic compound having electron transport properties preferably an acid dissociation constant pKa of 8 or more
  • the lowest unoccupied molecular orbital level (LUMO level) of the first organic compound having strong basicity is preferably higher than the LUMO level of the second organic compound.
  • LUMO level lowest unoccupied molecular orbital level
  • a material having electron transport properties may be referred to as an "electron transport material".
  • the first electron injection buffer layer 119a on the first electrode 101 (anode) side and the second electron injection buffer layer 119b on the second electrode 102 (cathode) side.
  • the electron injection buffer layer 119 of the intermediate layer 116 to have a stacked structure of the first electron injection buffer layer 119a and the second electron injection buffer layer 119b, the driving voltage of the light-emitting device 130 can be reduced.
  • the reliability of the light-emitting device 130 can be improved.
  • the first electron injection buffer layer 119a on the first electrode 101 side and the second electron injection buffer layer 119b on the second electrode 102 side, it is possible to prevent the diffusion of holes from the first electron injection buffer layer 119a side to the second electron injection buffer layer 119b. Therefore, the recombination probability of carriers in the second electron injection buffer layer 119b and the charge generation layer 117 can be reduced. Therefore, even if the charge generation capability of the second electron injection buffer layer 119b is reduced by the photolithography process, the light emission efficiency is not reduced, and a light emitting device with good characteristics can be realized.
  • the first electron injection buffer layer 119a and the second electron injection buffer layer 119b are provided in contact with each other, since this enhances the above-mentioned effect.
  • a strongly basic organic compound having a large acid dissociation constant pKa preferably a pKa of 8 or more
  • holes injected from the first electrode 101 (anode) side pass through the first light-emitting unit 501 and are then trapped or blocked by the first electron injection buffer layer 119a containing the strongly basic organic compound.
  • the presence of the first electron injection buffer layer 119a can prevent holes from diffusing into the second electron injection buffer layer 119b or the charge generation layer 117. This can reduce the probability of carrier recombination in the second electron injection buffer layer 119b and the charge generation layer 117. This can suppress an increase in the driving voltage of the light-emitting device and improve reliability.
  • the strongly basic organic compound preferably does not have an electron transporting skeleton. Since the strongly basic organic compound does not have an electron transporting skeleton, recombination between the electrons injected into the first electron injection buffer layer 119a and the holes trapped in the strongly basic organic compound is suppressed, and electrons can be efficiently injected into the first light-emitting unit 501. In addition, since carrier recombination is suppressed, the formation of an excited state in the electron injection buffer layer 119a can be suppressed. Therefore, a light-emitting device with good reliability can be provided.
  • the function of trapping or blocking holes, which the first organic compound has, and the function of flowing electrons, which the second organic compound has, can coexist.
  • the mixed layer used in the intermediate layer 116 have a first organic compound for trapping or blocking holes and a second organic compound for transporting electrons, the formation of an excited state can be suppressed and reliability can be improved.
  • an organic compound having a lower LUMO level than the first organic compound having strong basicity as the second organic compound having electron transport properties.
  • an organic compound having a lower HOMO level than the first organic compound having strong basicity as the second organic compound having electron transport properties.
  • the first organic compound is preferably an organic compound having a pKa of 8 or more, preferably a pKa of more than 10. It is more preferable that the first organic compound has an acid dissociation constant pKa of 12 or more, preferably a pKa of more than 13.
  • the acid dissociation constant pKa of a basic skeleton can be that of an organic compound in which part of the skeleton is replaced with hydrogen.
  • the acid dissociation constant pKa of a basic skeleton can be used as an indicator of the acidity of an organic compound having a basic skeleton.
  • the acid dissociation constant pKa of the basic skeleton with the highest acid dissociation constant pKa can be used as an indicator of the acidity of the organic compound.
  • organic compounds with a high acid dissociation constant pKa that can be used as the first organic compound include organic compounds having a basic skeleton represented by the following structural formulas (120) to (123).
  • an organic compound having a bicyclo ring structure having two or more nitrogen atoms in the ring element, and a heteroaromatic hydrocarbon ring having 2 to 30 carbon atoms in the ring is more preferred.
  • an organic compound having a 1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine skeleton and a heteroaromatic hydrocarbon ring having 2 to 30 carbon atoms in the ring is more preferred.
  • an organic compound having a guanidine skeleton is preferred.
  • organic compound be represented by the following general formula (G1):
  • the substance having a strong basicity of pKa 8 or more does not have an electron transporting skeleton from the viewpoint of suppressing recombination of the injected electron and the blocked hole on the substance having a strong basicity of pKa 8 or more.
  • the LUMO level of the second organic compound is preferably -3.25 eV or more and -2.50 eV or less.
  • the HOMO level of the second organic compound is preferably -6.5 eV or more and -5.7 eV or less.
  • organic compounds having a phenanthroline skeleton such as 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2-[3-(2-triphenylenyl)phenyl]-1,10-phenanthroline (abbreviation: mpPPhen), and 2-[4-(9-phenanthrenyl)-1-naphthalenyl]-1,10-phenanthroline (abbreviation: PnNPhen) are preferred, and organic compounds having a phenanthroline dimer structure such as mPPhen2P are more preferred because of their excellent stability.
  • mPPhen2P 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline)
  • mpPPhen 2-[3-(2-triphenylenyl)phenyl]-1,10-phenanthroline
  • PnNPhen 2-[4-(9-phenanthreny
  • the electron injection buffer layer 119 which has high hole blocking properties, as the electron injection buffer layer 119, it is possible to prevent holes from diffusing into the second electron injection buffer layer 119b. This reduces the probability of carrier recombination in the second electron injection buffer layer 119b. Therefore, even if the charge generation ability of the second electron injection buffer layer 119b decreases due to the photolithography process, there is no significant increase in the driving voltage and no significant decrease in the light emission efficiency, and a light-emitting device with good characteristics can be realized.
  • the second electron injection buffer layer 119b preferably exhibits an observable signal in electron spin resonance in a film state.
  • the spin density resulting from a signal observed near a g-value of 2.00 is preferably greater than 1 ⁇ 10 17 spins/cm 3 , more preferably 1 ⁇ 10 18 spins/cm 3 or more, and even more preferably 1 ⁇ 10 19 spins/cm 3 or more.
  • These conductive materials can be formed into films using dry methods such as vacuum deposition or sputtering, inkjet methods, spin coating methods, etc. They may also be formed using a wet method using a sol-gel method, or a wet method using a paste of a metal material.
  • the hole injection layer 111 is provided in contact with the anode and has a function of facilitating injection of holes into the organic compound layer 103 (first light-emitting unit 501).
  • the hole injection layer 111 can be formed of a phthalocyanine-based compound or complex compound such as phthalocyanine (abbreviation: H 2 Pc) or copper phthalocyanine (abbreviation: CuPc), an aromatic amine compound such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) or 4,4'-bis(N- ⁇ 4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl ⁇ -N-phenylamino)biphenyl (abbreviation: DNTPD), or a polymer such as poly(3,4-ethylenedioxythiophene)/(polystyrenesulf
  • the hole injection layer 111 may also be formed using the same composite material that constitutes the charge generation layer 117 in the intermediate layer 116.
  • the organic compound having hole transport properties used in the hole injection layer 111 is a substance having a relatively low HOMO level of -5.7 eV or more and -5.4 eV or less.
  • the organic compound having hole transport properties used in the composite material has a relatively low HOMO level, it becomes easy to inject holes into the hole transport layer, and it becomes easy to obtain a light-emitting device with a good lifetime.
  • the organic compound having hole transport properties used in the composite material is a substance having a relatively low HOMO level, the induction of holes is appropriately suppressed, and a light-emitting device with a good lifetime can be obtained.
  • the hole injection layer 111 By forming the hole injection layer 111, the hole injection properties are improved, and a light-emitting device with a low driving voltage can be obtained.
  • the charge generation layer 117 in the intermediate layer 116 also functions as a hole injection layer for the second light-emitting unit 502. Therefore, the second light-emitting unit 502 of the light-emitting device 130 shown in this embodiment does not have a hole injection layer. Note that a hole injection layer may be provided in the second light-emitting unit 502 as necessary.
  • the above-mentioned materials having hole transport properties include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: BPAFLP), and 4-phenyl-3'-(9-phenylflu
  • the light-emitting layer 113 (the first light-emitting layer 113_1 and the second light-emitting layer 113_2) preferably contains a light-emitting material and a host material.
  • the light-emitting layer 113 may contain other materials at the same time.
  • the light-emitting layer 113 may also be a stack of two layers having different compositions.
  • a phosphorescent material is used as the light-emitting material in the light-emitting layer 113
  • examples of materials that can be used include the following:
  • organometallic iridium complexes having a pyrimidine skeleton such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm) 2 (dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm) 2 (dpm)]), and bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm) 2 (dpm)]), (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(
  • known phosphorescent compounds may be selected and used.
  • TADF materials examples include fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. Also included are metal-containing porphyrins that contain magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc.
  • Mg magnesium
  • Zn zinc
  • Cd cadmium
  • Sn tin
  • Pt platinum
  • In indium
  • Pd palladium
  • the benzofuropyrimidine skeleton, the benzothienopyrimidine skeleton, the benzofuropyrazine skeleton, and the benzothienopyrazine skeleton are preferred because they have high acceptor properties and good reliability.
  • the skeletons having a ⁇ -electron rich heteroaromatic ring are preferred because they are stable and reliable, and therefore at least one of these skeletons is preferred.
  • dibenzofuran skeleton is preferred as the furan skeleton
  • dibenzothiophene skeleton is preferred as the thiophene skeleton.
  • pyrrole skeleton an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, and a 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeleton are particularly preferred.
  • a substance in which a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring are directly bonded is particularly preferred because the electron donating property of the ⁇ -electron-rich heteroaromatic ring and the electron accepting property of the ⁇ -electron-deficient heteroaromatic ring are both strong, and the energy difference between the S1 level and the T1 level is small, so that thermally activated delayed fluorescence can be efficiently obtained.
  • an aromatic ring to which an electron-withdrawing group such as a cyano group is bonded may be used instead of the ⁇ -electron-deficient heteroaromatic ring.
  • an aromatic amine skeleton, a phenazine skeleton, or the like can be used as the ⁇ -electron-rich skeleton.
  • examples of the ⁇ -electron-deficient skeleton include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, and a sulfone skeleton.
  • a ⁇ -electron-deficient skeleton and a ⁇ -electron-rich skeleton can be used in place of at least one of a ⁇ -electron-deficient heteroaromatic ring and a ⁇ -electron-rich heteroaromatic ring.
  • a TADF material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used as the TADF material.
  • Such a TADF material has a short emission lifetime (excitation lifetime), and therefore can suppress a decrease in efficiency in the high brightness region of a light-emitting device.
  • a material with the molecular structure shown below can be used.
  • exciplexes also written as exciplexes or exciplexes
  • TADF materials that can convert triplet excitation energy into singlet excitation energy
  • the phosphorescence spectrum observed at low temperatures may be used as an index of the T1 level.
  • T1 level For a TADF material, when a tangent line is drawn at the short-wavelength tail of the fluorescence spectrum, and the energy of the wavelength of the extrapolated line is taken as the S1 level, and a tangent line is drawn at the short-wavelength tail of the phosphorescence spectrum, and the energy of the wavelength of the extrapolated line is taken as the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, and more preferably 0.2 eV or less.
  • the S1 level of the host material is preferably higher than the S1 level of the TADF material.
  • the T1 level of the host material is preferably higher than the T1 level of the TADF material.
  • various carrier transport materials such as materials having electron transport properties and/or materials having hole transport properties, and the above-mentioned TADF materials can be used.
  • organic compounds having an amine skeleton, a ⁇ -electron-rich heteroaromatic ring skeleton, etc. are preferred.
  • NPB 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl
  • TPD N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl
  • TPD N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl
  • BSPB 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine
  • BPAFLP 4-phenyl-3'-(9-phenylfluoren-9-yl)
  • compounds having an aromatic amine skeleton or a carbazole skeleton are preferable because they have good reliability, high hole transportability, and contribute to reducing the driving voltage.
  • organic compounds listed as examples of materials having hole transport properties for the hole transport layer can also be used.
  • Examples of materials having electron transport properties include metal complexes such as bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq ), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), and organic compounds having a ⁇ -electron-deficient heteroaromatic ring.
  • metal complexes such as bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq ), bis(2-methyl-8-quinolino
  • organic compounds having a ⁇ -electron-deficient heteroaromatic ring examples include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazo organic compounds having an azole skeleton, such as 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation:
  • organic compounds containing heteroaromatic rings having a diazine skeleton, organic compounds containing heteroaromatic rings having a pyridine skeleton, and organic compounds containing heteroaromatic rings having a triazine skeleton are preferred because of their good reliability.
  • organic compounds containing heteroaromatic rings having a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing heteroaromatic rings having a triazine skeleton have high electron transport properties and contribute to reducing the driving voltage.
  • the luminescent material is a fluorescent luminescent material.
  • the S1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material.
  • the T1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Therefore, it is preferable that the T1 level of the TADF material is higher than the T1 level of the fluorescent luminescent material.
  • TADF material that emits light that overlaps with the wavelength of the lowest energy absorption band of the fluorescent substance. This is preferable because it allows for smooth transfer of excitation energy from the TADF material to the fluorescent substance, resulting in efficient emission.
  • the TADF material in order to efficiently generate singlet excitation energy from triplet excitation energy by reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. In addition, it is preferable that the triplet excitation energy generated in the TADF material does not move to the triplet excitation energy of the fluorescent material.
  • the fluorescent material has a protective group around the luminophore (skeleton causing light emission) of the fluorescent material.
  • a substituent having no ⁇ bond is preferable, and a saturated hydrocarbon is preferable, specifically, an alkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 12 carbon atoms, and a trialkylsilyl group having 3 to 10 carbon atoms are mentioned, and it is more preferable that there are multiple protective groups. Since a substituent having no ⁇ bond has poor function of transporting carriers, the distance between the TADF material and the luminophore of the fluorescent material can be increased without affecting carrier transport or carrier recombination.
  • the luminophore refers to an atomic group (skeleton) causing light emission in the fluorescent material.
  • the luminophore preferably has a skeleton having a ⁇ bond, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring.
  • luminophores include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton.
  • fluorescent substances having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because they have a high fluorescence quantum yield.
  • the host material contains a dibenzocarbazole skeleton
  • the HOMO is about 0.1 eV higher than that of a host material having a carbazole skeleton, making it easier for holes to enter, and also because it has excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton).
  • a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.
  • examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo
  • the host material may be a mixture of a plurality of substances. When a mixture of host materials is used, it is preferable to mix a material having electron transport properties with a material having hole transport properties. By mixing a material having electron transport properties with a material having hole transport properties, the transport properties of the light-emitting layer 113 can be easily adjusted, and the recombination region can be easily controlled.
  • the weight ratio of the content of the material having hole transport properties to the material having electron transport properties may be 1:19 to 19:1 (material having hole transport properties: material having electron transport properties).
  • a phosphorescent material can be used as part of the mixed material.
  • the phosphorescent material can be used as an energy donor that provides excitation energy to a fluorescent material when the fluorescent material is used as a light-emitting material.
  • these mixed materials may form an exciplex. It is preferable to select a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest energy absorption band of the light-emitting substance, because this facilitates energy transfer and allows efficient emission. In addition, the use of this configuration is preferable because it reduces the driving voltage.
  • At least one of the materials forming the exciplex may be a phosphorescent material. This allows the triplet excitation energy to be efficiently converted into singlet excitation energy by reverse intersystem crossing.
  • the HOMO level of the material having hole transport properties is equal to or higher than the HOMO level of the material having electron transport properties. It is also preferable that the LUMO level of the material having hole transport properties is equal to or higher than the LUMO level of the material having electron transport properties.
  • the LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV) measurement.
  • the formation of an exciplex can be confirmed, for example, by comparing the emission spectrum of a material having hole transport properties, the emission spectrum of a material having electron transport properties, and the emission spectrum of a mixed film obtained by mixing these materials, and observing the phenomenon in which the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectrum of each material (or has a new peak on the longer wavelength side).
  • transient photoluminescence (PL) of a material having hole transport properties the transient PL of a material having electron transport properties, and the transient PL of a mixed film obtained by mixing these materials, and observing the difference in transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component than the transient PL lifetime of each material, or the proportion of delayed components becoming larger.
  • the above-mentioned transient PL may be read as transient electroluminescence (EL).
  • the formation of an exciplex can also be confirmed by comparing the transient EL of a material having hole transport properties, the transient EL of a material having electron transport properties, and the transient EL of a mixed film obtained by mixing these materials, and observing the difference in transient response.
  • the electron transport layer 114 (the first electron transport layer 114_1 and the second electron transport layer 114_2) is a layer containing a substance having an electron transport property.
  • a substance having an electron mobility of 1 ⁇ 10 ⁇ 7 cm 2 /Vs or more, preferably 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more, at a square root of an electric field strength [V/cm] of 600 is preferable.
  • other substances can be used as long as they have a higher electron transport property than holes.
  • an organic compound having a ⁇ -electron-deficient heteroaromatic ring is preferable.
  • an organic compound having a ⁇ -electron-deficient heteroaromatic ring for example, any one or more of an organic compound having a heteroaromatic ring having a polyazole skeleton, an organic compound having a heteroaromatic ring having a pyridine skeleton, an organic compound having a heteroaromatic ring having a diazine skeleton, and an organic compound having a heteroaromatic ring having a triazine skeleton are preferable.
  • organic compounds having electron transport properties that can be used in the electron transport layer 114 the above-mentioned materials having electron transport properties and organic compounds that can be used as organic compounds having electron transport properties in the electron injection buffer layer 119 in the intermediate layer 116 can be used in the same way.
  • organic compounds containing a heteroaromatic ring having a diazine skeleton, organic compounds containing a heteroaromatic ring having a pyridine skeleton, and organic compounds containing a heteroaromatic ring having a triazine skeleton are preferred because of their good reliability.
  • organic compounds containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring having a triazine skeleton have high electron transport properties and also contribute to reducing the driving voltage.
  • the electron transport layer 114 is an electron transport layer with relatively high hole transport properties.
  • the HOMO level of the organic compound contained in the electron transport layer is -5.90 eV or more and -5.00 eV or less, preferably -5.80 eV or more and -5.00 eV or less, and more preferably -5.70 eV or more and -5.15 eV or less.
  • the LUMO level of the organic compound contained in the electron transport layer 114 is -3.15 eV or more and -2.50 eV or less, preferably -3.00 eV or more and -2.70 eV or less.
  • the organic compound with electron transport properties and the organic compound with hole transport properties are the same organic compound.
  • the electron transport layer 114 contains an organic compound that has both electron transport properties and hole transport properties, since this makes it easier to obtain a light-emitting device with good characteristics.
  • each of the electrodes or layers described above may be formed using a different film formation method.
  • the distance d between the first electrode 101a and the first electrode 101b can be made smaller by processing the organic compound layer using a photolithography method than when performing mask deposition. Specifically, the distance d can be made 2 ⁇ m or more and 5 ⁇ m or less.
  • subpixel 110R matters common to subpixel 110R, subpixel 110G, and subpixel 110B may be described as subpixel 110.
  • matters common to the corresponding structures may be described using symbols without the alphabets.
  • Subpixel 110R emits red light
  • subpixel 110G emits green light
  • subpixel 110B emits blue light. This allows an image to be displayed in pixel section 177.
  • subpixels of three colors, red (R), green (G), and blue (B) are described as an example, but the present invention is not limited to this configuration. That is, combinations of subpixels of other colors may be used.
  • the number of subpixels is not limited to three, and may be four or more. Examples of the four subpixels include subpixels of four colors R, G, B, and white (W), subpixels of four colors R, G, B, and yellow (Y), and subpixels of R, G, B, and infrared light (IR).
  • FIG. 3B multiple cross sections of the inorganic insulating layer 125 and the insulating layer 127 are shown, but when the light-emitting device 1000 is viewed from above, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are each connected to one another. In other words, it is preferable that the insulating layer 127 be an insulating layer having an opening on the first electrode.
  • the light-emitting devices 130 are light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B.
  • the light-emitting devices 130R, 130G, and 130B emit light of different colors.
  • the light-emitting device 130R can emit red light
  • the light-emitting device 130G can emit green light
  • the light-emitting device 130B can emit blue light.
  • the light-emitting device 130R, the light-emitting device 130G, or the light-emitting device 130B may also emit other visible light or infrared light.
  • the organic compound layer 103 has at least a light-emitting layer, and can have other functional layers (such as a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer).
  • the organic compound layer 103 and the common layer 104 may be combined to form a functional layer (such as a hole injection layer, a hole transport layer, a hole blocking layer, a light-emitting layer, an electron blocking layer, an electron transport layer, and an electron injection layer) that is included in an EL layer that emits light.
  • the light-emitting device of one embodiment of the present invention can be, for example, a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed. Note that the light-emitting device of one embodiment of the present invention may also be a bottom-emission type.
  • the light-emitting device 130 has a configuration as shown in embodiment 1. It has a first electrode (pixel electrode) consisting of a conductive layer 151 (151R, 151G, 151B) and a conductive layer 152 (152R, 152G, 152B), an organic compound layer 103 (103R, 103G, 103B) on the first electrode, a common layer 104 on the organic compound layer 103 (103R, 103G, 103B), and a second electrode (common electrode) 102 on the common layer.
  • the common layer 104 does not necessarily have to be provided. By providing the common layer 104, damage to the organic compound layer 103R due to a later process can be reduced. Furthermore, when the common layer 104 is provided, the common layer 104 may function as an electron injection layer. When the common layer 104 functions as an electron injection layer, the laminated structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in embodiment 1.
  • One of the pixel electrode and common electrode of the light-emitting device functions as an anode, and the other functions as a cathode.
  • the pixel electrode functions as an anode and the common electrode functions as a cathode.
  • the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent in the form of islands, either individually or for each light-emitting color.
  • By providing the organic compound layer 103 in the form of islands for each light-emitting device 130 it is possible to suppress leakage current between adjacent light-emitting devices 130 even in a high-definition light-emitting device. This makes it possible to prevent crosstalk and realize a light-emitting device with extremely high contrast. In particular, it is possible to realize a light-emitting device with high current efficiency at low luminance.
  • the organic compound layer 103 may be provided so as to cover the upper surface and side surface of the first electrode (pixel electrode) of the light-emitting device 130. This makes it easier to increase the aperture ratio of the light-emitting device 1000 compared to a configuration in which the end of the organic compound layer 103 is located inside the end of the pixel electrode. In addition, by covering the side surface of the pixel electrode of the light-emitting device 130 with the organic compound layer 103, it is possible to prevent the pixel electrode and the second electrode 102 from contacting each other, thereby preventing short circuits in the light-emitting device 130.
  • the distance between the light-emitting region of the organic compound layer 103 (i.e., the region overlapping with the pixel electrode) and the end of the organic compound layer 103 can be increased. Furthermore, since the end of the organic compound layer 103 may be damaged by processing, the reliability of the light-emitting device 130 can be improved by using an area away from the end of the organic compound layer 103 as the light-emitting region.
  • the first electrode (pixel electrode) of the light-emitting device may have a stacked structure.
  • the first electrode of the light-emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152.
  • the pixel electrode of the light-emitting device 130 has a conductive layer 151 with high reflectance to visible light and a conductive layer 152 with transparency to visible light and a large work function.
  • the higher the reflectance of the pixel electrode to visible light the higher the extraction efficiency of the light emitted by the organic compound layer 103 can be.
  • the pixel electrode functions as an anode, the higher the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103.
  • the light-emitting device 130 can be a light-emitting device with high light extraction efficiency and low driving voltage.
  • the reflectance of the conductive layer 151 to visible light is preferably, for example, 40% to 100%, or 70% to 100%.
  • the conductive layer 152 is an electrode that is transparent to visible light, it is preferable that the transmittance of the conductive layer 152 to visible light is, for example, 40% or more.
  • the chemical solution used for etching may permeate the structure. If the impregnated chemical solution comes into contact with the pixel electrode, galvanic corrosion or the like may occur between the multiple layers that make up the pixel electrode, causing the pixel electrode to deteriorate.
  • the light-emitting device 1000 can be formed by a method with a high yield, and therefore can be a low-cost light-emitting device.
  • the occurrence of defects in the light-emitting device 1000 can be suppressed, and therefore the light-emitting device 1000 can be a highly reliable light-emitting device.
  • a metal material can be used as the conductive layer 151.
  • metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc., and alloys containing appropriate combinations of these metals can also be used.
  • an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used.
  • indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used as the conductive layer 152.
  • the conductive layer 151 and the conductive layer 152 may have a stacked structure of multiple layers having different materials.
  • the conductive layer 151 may have a layer using a material that can be used for the conductive layer 152, such as a conductive oxide
  • the conductive layer 152 may have a layer using a material that can be used for the conductive layer 151, such as a metal material.
  • the layer in contact with the conductive layer 152 may be a layer containing the same material as the material used for the layer of the conductive layer 152 in contact with the conductive layer 151.
  • the end of the conductive layer 151 preferably has a tapered shape. Specifically, the end of the conductive layer 151 preferably has a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surface of the conductive layer 151 also has a tapered shape. By making the side surface of the conductive layer 152 tapered, the coverage of the organic compound layer 103 provided along the side surface of the conductive layer 152 can be improved.
  • each layer 151 or the conductive layer 152 has a layered structure, it is preferable that at least one side surface has a tapered shape. In addition, in the layered structure constituting each conductive layer, each layer may have a different tapered shape.
  • Figure 4A shows a case where the conductive layer 151 has a laminated structure of multiple layers containing different materials.
  • the conductive layer 151 has a structure including a conductive layer 151_1, a conductive layer 151_2 on the conductive layer 151_1, and a conductive layer 151_3 on the conductive layer 151_2.
  • the conductive layer 151 shown in Figure 4A has a three-layer laminated structure. In this way, when the conductive layer 151 has a laminated structure of multiple layers, the reflectance of at least one of the layers constituting the conductive layer 151 to visible light may be made higher than the reflectance of the conductive layer 152 to visible light.
  • the conductive layer 151_2 is sandwiched between the conductive layer 151_1 and the conductive layer 151_3. It is preferable to use a material that is less likely to change in quality than the conductive layer 151_2 for the conductive layer 151_1 and the conductive layer 151_3.
  • the conductive layer 151_1 can be made of a material that is less likely to cause migration due to contact with the insulating layer 175 than the conductive layer 151_2.
  • the conductive layer 151_3 can be made of a material that is less likely to oxidize than the conductive layer 151_2 and has a lower electrical resistivity than the oxide of the material used for the conductive layer 151_2.
  • the conductive layer 151_2 can be a layer having a higher reflectance to visible light than at least one of the conductive layer 151_1 and the conductive layer 151_3.
  • aluminum can be used for the conductive layer 151_2.
  • an alloy containing aluminum may be used for the conductive layer 151_2.
  • titanium which is a material that has a lower reflectance to visible light than aluminum but is less likely to cause migration than aluminum even when in contact with the insulating layer 175, can be used for the conductive layer 151_1.
  • titanium which is a material that has a lower reflectance to visible light than aluminum but is less likely to oxidize than aluminum and has an oxide electrical resistivity lower than that of aluminum oxide, can be used for the conductive layer 151_3.
  • silver or an alloy containing silver may be used as the conductive layer 151_3.
  • Silver has a characteristic that the reflectance to visible light is higher than that of titanium. Furthermore, silver is less likely to be oxidized than aluminum, and the electrical resistivity of silver oxide is lower than that of aluminum oxide.
  • the reflectance of the conductive layer 151 to visible light can be increased while suppressing an increase in the electrical resistance of the pixel electrode due to the oxidation of the conductive layer 151_2.
  • the alloy containing silver for example, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also written as APC) can be applied.
  • the reflectance of the conductive layer 151_3 to visible light can be made higher than the reflectance of the conductive layer 151_2 to visible light.
  • silver or an alloy containing silver may be used as the conductive layer 151_2.
  • the conductive layer 151_1 may also be made of silver or an alloy containing silver.
  • a film using titanium has better processability by etching than a film using silver. Therefore, by using titanium as the conductive layer 151_3, the conductive layer 151_3 can be easily formed.
  • a film using aluminum also has better processability by etching than a film using silver.
  • the light-emitting device 1000 can be a light-emitting device with high light extraction efficiency and high reliability.
  • the light extraction efficiency of the light-emitting device 1000 can be suitably improved by using silver, which is a material with high reflectivity for visible light, or an alloy containing silver as the conductive layer 151_3.
  • the side of the conductive layer 151_2 may be located inside the side of the conductive layer 151_1 and the conductive layer 151_3. This may reduce the coverage of the conductive layer 152 with respect to the conductive layer 151, and may cause a step in the conductive layer 152.
  • FIG. 4A shows an example in which an insulating layer 156 is provided on the conductive layer 151_1 so as to have an area that overlaps with the side surface of the conductive layer 151_2. This can prevent the conductive layer 152 from being disconnected, thereby preventing poor connection or an increase in driving voltage.
  • FIG. 4A illustrates a structure in which the side surfaces of the conductive layer 151_2 are entirely covered by the insulating layer 156, a portion of the side surface of the conductive layer 151_2 may not be covered by the insulating layer 156. Similarly, in pixel electrodes having configurations shown below, a portion of the side surface of the conductive layer 151_2 may not be covered by the insulating layer 156.
  • the insulating layer 156 has a curved surface. This can suppress the occurrence of step discontinuities in the conductive layer 152 covering the insulating layer 156, for example, compared to when the side surface of the insulating layer 156 is vertical (parallel to the Z direction).
  • the insulating layer 156 has a tapered shape on the side surface, specifically a tapered shape with a taper angle of less than 90°, it can suppress the occurrence of step discontinuities in the conductive layer 152 covering the insulating layer 156, for example, compared to when the side surface of the insulating layer 156 is vertical.
  • the light-emitting device 1000 can be manufactured by a method with a high yield. Furthermore, the occurrence of defects is suppressed, and the light-emitting device 1000 can be a highly reliable light-emitting device.
  • Figure 4B shows a configuration in which the insulating layer 156 covers not only the side surface of the conductive layer 151_2 but also the side surfaces of the conductive layer 151_1, the conductive layer 151_2, and the conductive layer 151_3 in the first electrode 101 of Figure 1.
  • Figure 4C shows a configuration in which the insulating layer 156 is not provided in the first electrode 101 of Figure 1.
  • Figure 4D shows a configuration in which the conductive layer 151 does not have a layered structure, and the conductive layer 152 has a layered structure in the first electrode 101 of Figure 1.
  • Figure 4D shows a case in which the conductive layer 152 has a three-layered structure including a conductive layer 152_1, a conductive layer 152_2 on the conductive layer 152_1, and a conductive layer 152_3 on the conductive layer 152_2.
  • the conductive layer 152_1 has higher adhesion to the conductive layer 152_2 than, for example, the insulating layer 175.
  • an oxide containing one or more of indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used.
  • peeling of the conductive layer 152_2 can be suppressed.
  • the conductive layer 152_2 can be configured not to be in contact with the insulating layer 175.
  • the conductive layer 152_2 is a layer having a higher reflectance for visible light (for example, reflectance for light with a wavelength in the range of 400 nm to less than 750 nm) than the conductive layer 152_3.
  • the reflectance for visible light of the conductive layer 152_2 can be, for example, 70% to 100%, preferably 80% to 100%, and more preferably 90% to 100%.
  • silver or an alloy containing silver can be used as the conductive layer 152_2.
  • an alloy containing silver can be an alloy of silver, palladium, and copper (APC).
  • the light-emitting device 1000 can be a top-emission type light-emitting device with high light extraction efficiency. Note that a material other than silver may be used as the conductive layer 152_2.
  • the conductive layer 152_3 is a layer having a high work function.
  • the conductive layer 152_3 is, for example, a layer having a higher work function than the conductive layer 152_2.
  • the conductive layer 152_3 can be made of the same material as the conductive layer 152_1.
  • the conductive layer 152_1 and the conductive layer 152_3 can be made of the same material.
  • the conductive layer 152_3 be a layer having a small work function.
  • the conductive layer 152_3 is a layer having a smaller work function than the conductive layer 152_2.
  • the conductive layer 152_3 is preferably a layer having a high transmittance for visible light (for example, transmittance for light having a wavelength in the range of 400 nm to less than 750 nm).
  • the transmittance for visible light of the conductive layer 152_3 is preferably higher than the transmittance for visible light of the conductive layer 151 or the conductive layer 152_2.
  • the transmittance for visible light of the conductive layer 152_3 is preferably 40% to 100%, more preferably 70% to 100%, and even more preferably 80% to 100%.
  • the conductive layer 152_2 under the conductive layer 152_3 may be a layer having a high reflectance for visible light. Therefore, the light-emitting device 1000 can be a light-emitting device with high light extraction efficiency.
  • the thin films (insulating film, semiconductor film, conductive film, etc.) constituting the light-emitting device can be formed by sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), ALD, etc.
  • CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD.
  • PECVD plasma enhanced chemical vapor deposition
  • thermal CVD metal organic chemical vapor deposition
  • the thin films (insulating films, semiconductor films, conductive films, etc.) constituting the light-emitting device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.
  • vacuum processes such as deposition methods and solution processes such as spin coating and inkjet methods can be used.
  • deposition methods include physical vapor deposition (PVD (Physical Vapor Deposition) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD).
  • PVD Physical Vapor Deposition
  • CVD chemical vapor deposition
  • functional layers (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer, etc.) contained in the organic compound layer can be formed by deposition methods (vacuum deposition method, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet method, screen (screen printing) method, offset (lithographic printing) method, flexo (letterpress printing) method, gravure method, microcontact method, etc.), etc.
  • deposition methods vacuum deposition method, etc.
  • coating methods dip coating, die coating, bar coating, spin coating, spray coating, etc.
  • printing methods inkjet method, screen (screen printing) method, offset (lithographic printing) method, flexo (letterpress printing) method, gravure method, microcontact method, etc.
  • the thin film that constitutes the light-emitting device can be processed using, for example, a photolithography method.
  • the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method, or the like.
  • island-shaped thin films may be directly formed using a film formation method that uses a shielding mask such as a metal mask.
  • an insulating layer 171 is formed on a substrate (not shown).
  • a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layer 172 and the conductive layer 179.
  • an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.
  • a substrate having at least a heat resistance sufficient to withstand subsequent heat treatment can be used.
  • a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used.
  • a semiconductor substrate such as a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used.
  • a resist mask 191 is formed, for example, on the conductive film 151f.
  • the resist mask 191 can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.
  • the conductive film 151f in the region that does not overlap with the resist mask 191 is removed by, for example, an etching method, specifically, for example, a dry etching method.
  • an etching method specifically, for example, a dry etching method.
  • the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer may be removed by a wet etching method. As a result, the conductive layer 151 is formed.
  • a recess also referred to as a "counterbore” may be formed in the region of the insulating layer 175 that does not overlap with the conductive layer 151.
  • the resist mask 191 is removed.
  • the resist mask 191 can be removed by ashing using oxygen plasma, for example.
  • oxygen gas and a Group 18 element such as CF4 , C4F8 , SF6 , CHF3 , Cl2 , H2O , BCl3 , or He may be used.
  • the resist mask 191 may be removed by wet etching.
  • insulating film 156f which will later become insulating layer 156R, insulating layer 156G, insulating layer 156B, and insulating layer 156C, is formed on conductive layer 151R, conductive layer 151G, conductive layer 151B, conductive layer 151C, and insulating layer 175.
  • CVD, ALD, sputtering, or vacuum deposition can be used to form insulating film 156f.
  • the insulating film 156f can be made of an inorganic material.
  • an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating film 156f.
  • an oxide insulating film containing silicon, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating film 156f.
  • silicon oxynitride can be used for the insulating film 156f.
  • insulating layer 156R, insulating layer 156G, insulating layer 156B, and insulating layer 156C are formed by processing insulating film 156f.
  • insulating layer 156 can be formed by substantially uniformly etching the upper surface of insulating film 156f. Such uniform etching and planarization is also called "etch-back processing.”
  • insulating layer 156 may also be formed using a photolithography method.
  • a conductive film 152f that will later become conductive layers 152R, 152G, 152B, and 152C is formed on conductive layer 151R, conductive layer 151G, conductive layer 151B, conductive layer 151C, insulating layer 156R, insulating layer 156G, insulating layer 156B, insulating layer 156C, and insulating layer 175.
  • the conductive film 152f is formed so as to cover, for example, conductive layer 151R, conductive layer 151G, conductive layer 151B, conductive layer 151C, insulating layer 156R, insulating layer 156G, insulating layer 156B, and insulating layer 156C.
  • the conductive film 152f can be formed by, for example, a sputtering method or a vacuum deposition method.
  • the conductive film 152f can be formed by, for example, an ALD method.
  • the conductive film 152f can be formed using, for example, a conductive oxide.
  • the conductive film 152f can have a stacked structure of a film using a metal material and a film using a conductive oxide on the film.
  • the conductive film 152f can have a stacked structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide on the film.
  • the conductive film 152f is processed by, for example, photolithography to form conductive layers 152R, 152G, 152B, and 152C. Specifically, for example, after forming a resist mask, part of the conductive film 152f is removed by etching. The conductive film 152f can be removed by, for example, wet etching. Note that the conductive film 152f may also be removed by dry etching. In this manner, a pixel electrode including the conductive layer 151 and the conductive layer 152 is formed.
  • the hydrophobization treatment can change the surface to be treated from hydrophilic to hydrophobic, or can increase the hydrophobicity of the surface to be treated.
  • the hydrophobization treatment is not necessarily required.
  • an organic compound film 103Bf which will later become organic compound layer 103B, is formed on conductive layer 152B, conductive layer 152G, conductive layer 152R, and insulating layer 175.
  • the organic compound film 103Bf has a plurality of organic compound layers each having at least one light-emitting layer.
  • the structure of the light-emitting device 130 described in the first embodiment can be referred to.
  • the organic compound film 103Bf may have a structure in which a plurality of organic compound layers each having at least one light-emitting layer are stacked with an intermediate layer interposed therebetween.
  • the organic compound film 103Bf is not formed on the conductive layer 152C.
  • a mask for defining the deposition area also referred to as an "area mask” or “rough metal mask” to distinguish it from a fine metal mask
  • the organic compound film 103Bf can be deposited only in the desired area.
  • the organic compound film 103Bf can be formed by, for example, a vapor deposition method, specifically a vacuum vapor deposition method.
  • the organic compound film 103Bf may also be formed by a transfer method, a printing method, an inkjet method, a coating method, or other methods.
  • a sacrificial film 158Bf which will later become the sacrificial layer 158B
  • a mask film 159Bf which will later become the mask layer 159B
  • the sacrificial film 158Bf and the mask film 159Bf can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition. They may also be formed by using the wet film formation method described above.
  • the sacrificial film 158Bf and the mask film 159Bf are formed at a temperature lower than the heat resistance temperature of the organic compound film 103Bf.
  • the substrate temperature when forming the sacrificial film 158Bf and the mask film 159Bf is typically 200°C or less, preferably 150°C or less, more preferably 120°C or less, more preferably 100°C or less, and even more preferably 80°C or less.
  • a film that is highly resistant to the processing conditions of the organic compound film 103Bf specifically, a film that has a large etching selectivity with respect to the organic compound film 103Bf, is used.
  • a film that has a large etching selectivity with respect to the sacrificial film 158Bf is used.
  • the sacrificial film 158Bf and the mask film 159Bf are preferably made of a film that can be removed by wet etching.
  • damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced compared to when using the dry etching method.
  • the acidic chemical solution may be a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed chemical solution of two or more acids (also referred to as "mixed acid").
  • the sacrificial film 158Bf and the mask film 159Bf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film, for example.
  • a film containing a material that blocks ultraviolet light can achieve the same effect when used as the material for the inorganic insulating film 125f described below.
  • the sacrificial film 158Bf and the mask film 159Bf can each be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or an alloy material containing such a metal material.
  • a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or an alloy material containing such a metal material.
  • a low-melting point material such as aluminum or silver.
  • the sacrificial film 158Bf and the mask film 159Bf may each be made of a metal oxide such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), or indium tin oxide containing silicon.
  • a metal oxide such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), or indium tin oxide containing silicon.
  • semiconductor materials such as silicon or germanium as the sacrificial film 158Bf and the mask film 159Bf, because they have high affinity with the semiconductor manufacturing process.
  • Oxides or nitrides of the above semiconductor materials can be used.
  • nonmetallic materials such as carbon or compounds thereof can be used.
  • metals such as titanium, tantalum, tungsten, chromium, aluminum, or alloys containing one or more of these can be used.
  • oxides containing the above metals, such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.
  • various inorganic insulating films can be used for the sacrificial film 158Bf and the mask film 159Bf.
  • oxide insulating films are preferable because they have higher adhesion to the organic compound film 103Bf than nitride insulating films.
  • inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial film 158Bf and the mask film 159Bf.
  • an aluminum oxide film can be formed as the sacrificial film 158Bf and the mask film 159Bf using the ALD method. Using the ALD method is preferable because it can reduce damage to the underlayer (particularly the organic compound layer).
  • the sacrificial film 158Bf and the mask film 159Bf may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as a perfluoropolymer.
  • PVA polyvinyl alcohol
  • polyvinyl butyral polyvinylpyrrolidone
  • polyethylene glycol polyglycerin
  • pullulan polyethylene glycol
  • polyglycerin polyglycerin
  • pullulan polyethylene glycol
  • water-soluble cellulose polyglycerin
  • pullulan water-soluble cellulose
  • alcohol-soluble polyamide resin or a fluororesin such as a perfluoropolymer.
  • the sacrificial film 158Bf can be an organic film (e.g., a PVA film) formed using either a vapor deposition method or the above-mentioned wet film formation method
  • the mask film 159Bf can be an inorganic film (e.g., a silicon nitride film) formed using a sputtering method.
  • a resist mask 190B is formed on the mask film 159Bf.
  • the resist mask 190B can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.
  • the resist mask 190B may be made using either a positive resist material or a negative resist material.
  • the resist mask 190B is provided at a position overlapping with the conductive layer 152B. It is preferable that the resist mask 190B is also provided at a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the light-emitting device. Note that the resist mask 190B does not have to be provided on the conductive layer 152C. In addition, it is preferable that the resist mask 190B is provided so as to cover from the end of the organic compound film 103Bf to the end of the conductive layer 152C (the end on the organic compound film 103Bf side), as shown in the cross-sectional view between B1 and B2 in FIG. 6C.
  • a portion of the mask film 159Bf is removed using the resist mask 190B to form a mask layer 159B.
  • the mask layer 159B remains on the conductive layer 152B and on the conductive layer 152C.
  • the resist mask 190B is then removed.
  • a portion of the sacrificial film 158Bf is removed using the mask layer 159B as a mask (also referred to as a "hard mask") to form a sacrificial layer 158B.
  • the wet etching method By using the wet etching method, damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced compared to when using the dry etching method.
  • a chemical solution using, for example, a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture of these liquids.
  • TMAH tetramethylammonium hydroxide
  • a dry etching method when a dry etching method is used in processing the sacrificial film 158Bf, deterioration of the organic compound film 103Bf can be suppressed by not using a gas containing oxygen as an etching gas.
  • a gas containing oxygen such as CF4, C4F8 , SF6 , CHF3 , Cl2 , H2O , BCl3 , or He as an etching gas.
  • the resist mask 190B can be removed in the same manner as the resist mask 191. At this time, the sacrificial film 158Bf is located on the outermost surface, and the organic compound film 103Bf is not exposed, so that damage to the organic compound film 103Bf can be suppressed in the process of removing the resist mask 190B. In addition, the range of options for the method of removing the resist mask 190B can be expanded.
  • the organic compound film 103Bf is processed to form the organic compound layer 103B.
  • the mask layer 159B and the sacrificial layer 158B are used as a hard mask to remove a portion of the organic compound film 103Bf to form the organic compound layer 103B.
  • a laminated structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B.
  • the conductive layer 152G and the conductive layer 152B are exposed.
  • the organic compound film 103Bf can be processed by dry etching or wet etching.
  • an etching gas containing oxygen can be used.
  • the etching speed can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching speed. This makes it possible to suppress damage to the organic compound film 103Bf. Furthermore, problems such as adhesion of reaction products that occur during etching can be suppressed.
  • an etching gas that does not contain oxygen may be used.
  • an etching gas that does not contain oxygen by using an etching gas that does not contain oxygen, deterioration of the organic compound film 103Bf can be suppressed.
  • the resist mask 190B is formed on the mask film 159Bf, and a part of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. Then, the mask layer 159B is used as a hard mask to remove a part of the organic compound film 103Bf to form the organic compound layer 103B. Therefore, it can be said that the organic compound layer 103B is formed by processing the organic compound film 103Bf using a photolithography method. Note that a part of the organic compound film 103Bf may be removed using the resist mask 190B. Then, the resist mask 190B may be removed.
  • a hydrophobic treatment may be performed on the conductive layer 152G as necessary.
  • the surface state of the conductive layer 152G may change to a hydrophilic state.
  • the adhesion between the conductive layer 152G and a layer (here, the organic compound layer 103G) formed in a later process can be improved, and film peeling can be suppressed.
  • an organic compound film 103Gf which will later become the organic compound layer 103G, is formed on the conductive layer 152G, the conductive layer 152R, the mask layer 159B, and the insulating layer 175.
  • the organic compound film 103Gf can be formed by a method similar to that which can be used to form the organic compound film 103Bf.
  • the organic compound film 103Gf can have the same configuration as the organic compound film 103Bf.
  • a sacrificial film 158Gf which will later become the sacrificial layer 158G
  • a mask film 159Gf which will later become the mask layer 159G
  • a resist mask 190G is formed.
  • the material and formation method of the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Bf and the mask film 159Bf.
  • the material and formation method of the resist mask 190G are the same as those applicable to the resist mask 190B.
  • the resist mask 190G is placed in a position that overlaps the conductive layer 152G.
  • a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G.
  • the mask layer 159G remains on the conductive layer 152G.
  • the resist mask 190G is then removed.
  • the mask layer 159G is then used as a mask to remove a portion of the sacrificial film 158Gf to form a sacrificial layer 158G.
  • the organic compound film 103Gf is then processed to form the organic compound layer 103G.
  • the mask layer 159G and the sacrificial layer 158G are used as hard masks to remove a portion of the organic compound film 103Gf to form the organic compound layer 103G.
  • a laminated structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G.
  • the mask layer 159B and the conductive layer 152R are exposed.
  • a hydrophobic treatment may be performed on the conductive layer 152R.
  • an organic compound film 103Rf which will later become the organic compound layer 103R, is formed on the conductive layer 152R, on the mask layer 159G, on the mask layer 159B, and on the insulating layer 175.
  • the organic compound film 103Rf can be formed by a method similar to that which can be used to form the organic compound film 103Gf.
  • the organic compound film 103Rf can have the same configuration as the organic compound film 103Gf.
  • a sacrificial layer 158 is formed from the sacrificial film 158Rf, a mask layer 159R is formed from the mask film 159Rf, or an organic compound layer 103R is formed from the organic compound film 103Rf.
  • the method for forming the resist mask 190R, the sacrificial layer 158R, the mask layer 159R, and the organic compound layer 103R can be seen in the description of the organic compound layer 103G.
  • the side surfaces of the organic compound layers 103B, 103G, and 103R are perpendicular or approximately perpendicular to the surface on which they are formed.
  • the angle between the surface on which they are formed and these side surfaces is 60 degrees or more and 90 degrees or less.
  • the distance between two adjacent organic compound layers 103B, 103G, and 103R formed by photolithography can be narrowed to 8 ⁇ m or less, 5 ⁇ m or less, 3 ⁇ m or less, 2 ⁇ m or less, or 1 ⁇ m or less.
  • the distance can be defined, for example, as the distance between two adjacent opposing ends of the organic compound layers 103B, 103G, and 103R. In this way, by narrowing the distance between the island-shaped organic compound layers, a light-emitting device having high definition and a large aperture ratio can be provided.
  • the distance between the first electrodes between adjacent light-emitting devices can also be narrowed, for example, to 10 ⁇ m or less, 8 ⁇ m or less, 5 ⁇ m or less, 3 ⁇ m or less, or 2 ⁇ m or less. Note that the distance between the first electrodes between adjacent light-emitting devices is preferably 2 ⁇ m or more and 5 ⁇ m or less.
  • mask layer 159B, mask layer 159G, and mask layer 159R are removed.
  • mask layer 159B, mask layer 159G, and mask layer 159R are removed will be described as an example, but mask layer 159B, mask layer 159G, and mask layer 159R do not have to be removed.
  • mask layer 159B, mask layer 159G, and mask layer 159R contain a material that has a light-blocking property against ultraviolet light as described above, the organic compound layer can be protected from light irradiation (including illumination light) by proceeding to the next step without removing them.
  • the mask layer removal process can use a method similar to that used in the mask layer processing process.
  • damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R when removing the mask layer can be reduced compared to when a dry etching method is used.
  • the mask layer may also be removed by dissolving it in a solvent such as water or alcohol.
  • a solvent such as water or alcohol.
  • alcohol include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), and glycerin.
  • a drying process may be performed to remove water contained in the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, and water adsorbed on the surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.
  • a heat treatment can be performed in an inert atmosphere or a reduced pressure atmosphere.
  • the heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower.
  • a reduced pressure atmosphere is preferable because it allows drying at a lower temperature.
  • an inorganic insulating film 125f which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R.
  • an insulating film that will later become the insulating layer 127 is formed in contact with the upper surface of the inorganic insulating film 125f.
  • the upper surface of the inorganic insulating film 125f has a high affinity with the material (e.g., a photosensitive resin composition containing an acrylic resin) used for the insulating film that will become the insulating layer 127.
  • a surface treatment may be performed on the upper surface of the inorganic insulating film 125f. Specifically, it is preferable to hydrophobize (or increase the hydrophobicity of) the surface of the inorganic insulating film 125f.
  • a silylating agent such as hexamethyldisilazane (HMDS).
  • HMDS hexamethyldisilazane
  • an insulating film 127f which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.
  • the inorganic insulating film 125f and the insulating film 127f are preferably formed by a method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.
  • the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, it is preferably formed by a method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R than the insulating film 127f.
  • the inorganic insulating film 125f and the insulating film 127f are formed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, respectively.
  • the inorganic insulating film 125f can be a film with a low impurity concentration and high barrier properties against at least one of water and oxygen, even if it is thin.
  • the substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or more, 80°C or more, 100°C or more, or 120°C or more, and 200°C or less, 180°C or less, 160°C or less, 150°C or less, or 140°C or less.
  • the inorganic insulating film 125f it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.
  • the inorganic insulating film 125f is preferably formed, for example, by the ALD method.
  • the ALD method is preferable because it can reduce film formation damage and can form a film with high coverage.
  • As the inorganic insulating film 125f it is preferable to form an aluminum oxide film, for example, by the ALD method.
  • the inorganic insulating film 125f may be formed using a sputtering method, a CVD method, or a PECVD method, which have a faster film formation speed than the ALD method. This allows a highly reliable light-emitting device to be manufactured with high productivity.
  • the insulating film 127f is preferably formed using the wet film formation method described above.
  • the insulating film 127f is preferably formed using a photosensitive material, for example, by spin coating, and more specifically, is preferably formed using a photosensitive resin composition containing an acrylic resin.
  • the insulating film 127f is preferably formed using a resin composition containing, for example, a polymer, an acid generator, and a solvent.
  • the polymer is formed using one or more types of monomers and has a structure in which one or more types of structural units (also referred to as "structural units") are regularly or irregularly repeated.
  • structural units also referred to as "structural units”
  • the acid generator one or both of a compound that generates an acid when irradiated with light and a compound that generates an acid when heated can be used.
  • the resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.
  • a heat treatment also referred to as "pre-baking" after forming the insulating film 127f.
  • the heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.
  • the substrate temperature during the heat treatment is preferably 50°C or higher and 200°C or lower, more preferably 60°C or higher and 150°C or lower, and even more preferably 70°C or higher and 120°C or lower. This makes it possible to remove the solvent contained in the insulating film 127f.
  • the insulating film 127f is exposed to visible light or ultraviolet light.
  • a positive-type photosensitive resin composition containing an acrylic resin is used for the insulating film 127f
  • visible light or ultraviolet light is irradiated to the area where the insulating layer 127 will not be formed in a later process.
  • the insulating layer 127 is formed in the area sandwiched between any two of the conductive layers 152B, 152G, and 152R, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layers 152B, 152G, 152R, and 152C.
  • a negative-type photosensitive material is used for the insulating film 127f
  • visible light or ultraviolet light is irradiated to the area where the insulating layer 127 will be formed.
  • the width of the insulating layer 127 to be formed later can be controlled by the exposed area of the insulating film 127f.
  • the insulating layer 127 is processed so that it has a portion that overlaps with the upper surface of the conductive layer 151.
  • a barrier insulating layer against oxygen e.g., an aluminum oxide film, etc.
  • oxygen e.g., an aluminum oxide film, etc.
  • the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compound contained in the organic compound layer may be excited, and the reaction with oxygen contained in the atmosphere may be promoted.
  • oxygen may bond to the organic compound contained in the organic compound layer.
  • the insulating layer 127a is formed in the area sandwiched between any two of the conductive layers 152B, 152G, and 152R, and in the area surrounding the conductive layer 152C.
  • an acrylic resin is used for the insulating film 127f
  • an alkaline solution such as TMAH, can be used as the developer.
  • an etching process is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and to reduce the thickness of the sacrificial layers 158B, 158G, and 158R. As a result, the inorganic insulating layer 125 is formed under the insulating layer 127a.
  • the etching process for processing the inorganic insulating film 125f using the insulating layer 127a as a mask may be referred to as the first etching process.
  • the sacrificial layers 158B, 158G, and 158R are not completely removed, and the etching process is stopped when the film thickness becomes thin. In this way, by leaving the corresponding sacrificial layers 158B, 158G, and 158R on the organic compound layers 103B, 103G, and 103R, it is possible to prevent the organic compound layers 103B, 103G, and 103R from being damaged in the processing of the subsequent steps.
  • the first etching process can be performed by dry etching or wet etching. Note that if the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158B, 158G, and 158R, this is preferable because the inorganic insulating film 125f can be processed and the exposed sacrificial layer 158 can be thinned in one go by the first etching process.
  • insulating layer 127a which has tapered sides, as a mask, it is relatively easy to make the sides of inorganic insulating layer 125 and the upper ends of the sides of sacrificial layers 158B, 158G, and 158R tapered.
  • a chlorine-based gas can be used.
  • Cl2 , BCl3 , SiCl4 , CCl4 , etc. can be used alone or in a mixture of two or more gases.
  • oxygen gas, hydrogen gas, helium gas, argon gas, etc. can be appropriately added alone or in a mixture of two or more gases to the chlorine-based gas.
  • the first etching process can be performed by wet etching.
  • wet etching method damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be reduced compared to the case of using the dry etching method.
  • the acidic chemical solution may be a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed chemical solution (mixed acid) of two or more types of acids.
  • the etching can be performed using an alkaline solution.
  • the wet etching of an aluminum oxide film can be performed using an alkaline solution, TMAH.
  • the wet etching can be performed using the paddle method.
  • a heat treatment (also referred to as "post-bake") is performed.
  • the insulating layer 127a can be transformed into an insulating layer 127 having a tapered shape on the side surface (FIG. 10C).
  • the heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer.
  • the heat treatment can be performed at a substrate temperature of 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, more preferably 70° C. or higher and 130° C. or lower.
  • the heating atmosphere may be an air atmosphere or an inert atmosphere.
  • the heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere. It is preferable that the substrate temperature of the heat treatment in this step is higher than that of the heat treatment (pre-bake) after the formation of the insulating film 127f.
  • the heat treatment can improve the adhesion between the insulating layer 127 and the inorganic insulating layer 125, and can also improve the corrosion resistance of the insulating layer 127.
  • the insulating layer 127a can be deformed so that the end of the inorganic insulating layer 125 is covered by the insulating layer 127.
  • an etching process is performed using the insulating layer 127 as a mask to remove parts of the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R.
  • a part of the inorganic insulating layer 125 may also be removed.
  • the etching process forms openings in the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R, and the upper surfaces of the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, and the conductive layer 152C are exposed from the openings.
  • the etching process using the insulating layer 127 as a mask to expose the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R may be referred to as a second etching process.
  • the second etching process is performed by wet etching.
  • the wet etching can be performed using an acidic chemical solution or an alkaline solution, as in the first etching process.
  • a heat treatment may be further performed.
  • the heat treatment can remove water contained in the organic compound layer and water adsorbed to the surface of the organic compound layer.
  • the heat treatment may also change the shape of the insulating layer 127.
  • the insulating layer 127 may extend to cover at least one of the ends of the inorganic insulating layer 125, the ends of the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R, and the top surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.
  • FIG. 11A shows an example in which a portion of the end of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered by the insulating layer 127, and the tapered portion formed by the second etching process is exposed (see FIG. 4A).
  • the insulating layer 127 may cover the entire end of the sacrificial layer 158G.
  • the end of the insulating layer 127 may droop and cover the end of the sacrificial layer 158G.
  • the end of the insulating layer 127 may contact the upper surface of at least one of the organic compound layers 103B, 103G, and 103R.
  • a common electrode 155 is formed on the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the conductive layer 152C, and the insulating layer 127.
  • the common electrode 155 can be formed by a method such as sputtering or vacuum deposition. Alternatively, the common electrode 155 may be formed by stacking a film formed by deposition and a film formed by sputtering.
  • a protective layer 131 is formed on the common electrode 155.
  • the protective layer 131 can be formed by a method such as a vacuum deposition method, a sputtering method, a CVD method, or an ALD method.
  • the substrate 120 is attached onto the protective layer 131 using the resin layer 122, whereby a light-emitting device can be manufactured.
  • the insulating layer 156 is provided so as to have an area overlapping with the side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. This can increase the yield of light-emitting devices and suppress the occurrence of defects.
  • the island-shaped organic compound layer 103B, the island-shaped organic compound layer 103G, and the organic compound layer 103R are formed by forming a film on one surface and then processing it, rather than by using a fine metal mask, so that the island-shaped layers can be formed with a uniform thickness.
  • a high-definition light-emitting device or a light-emitting device with a high aperture ratio can be realized.
  • the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be prevented from contacting each other in adjacent subpixels. Therefore, it is possible to prevent leakage current from occurring between the subpixels. This makes it possible to prevent crosstalk and realize a light-emitting device with extremely high contrast.
  • the light-emitting device has a tandem-type light-emitting device manufactured by using a photolithography method, a light-emitting device with good characteristics can be provided.
  • FIG. 4 a pixel layout different from that in Fig. 4 will be mainly described.
  • the arrangement of the sub-pixels There is no particular limitation on the arrangement of the sub-pixels, and various methods can be applied. Examples of the arrangement of the sub-pixels include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a Pentile arrangement.
  • the top surface shape of the subpixels shown in the figures in this embodiment corresponds to the top surface shape of the light-emitting region.
  • the top surface shape of the subpixel can be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.
  • circuit layout constituting the subpixel is not limited to the range of the subpixel shown in the figure, but may be arranged outside of it.
  • the pixel 178 shown in FIG. 12A has an S-stripe arrangement.
  • the pixel 178 shown in FIG. 12A is composed of three subpixels: subpixel 110R, subpixel 110G, and subpixel 110B.
  • Pixel 178 shown in FIG. 12B has subpixel 110R having a generally trapezoidal or triangular top surface shape with rounded corners, subpixel 110G having a generally trapezoidal or triangular top surface shape with rounded corners, and subpixel 110B having a generally rectangular or hexagonal top surface shape with rounded corners.
  • Subpixel 110R also has a larger light-emitting area than subpixel 110G. In this way, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device a subpixel has, the smaller its size can be.
  • FIG. 12C shows an example in which pixel 124a having subpixel 110R and subpixel 110G and pixel 124b having subpixel 110G and subpixel 110B are arranged alternately.
  • Pixels 124a and 124b shown in Figures 12D to 12F are arranged in a delta arrangement.
  • Pixel 124a has two subpixels (subpixel 110R and subpixel 110G) in the top row (first row) and one subpixel (subpixel 110B) in the bottom row (second row).
  • Pixel 124b has one subpixel (subpixel 110B) in the top row (first row) and two subpixels (subpixel 110R and subpixel 110G) in the bottom row (second row).
  • Figure 12D shows an example in which each subpixel has a generally rectangular top surface shape with rounded corners
  • Figure 12E shows an example in which each subpixel has a circular top surface shape
  • Figure 12F shows an example in which each subpixel has a generally hexagonal top surface shape with rounded corners.
  • each subpixel is arranged inside a close-packed hexagonal region.
  • each subpixel is arranged so that it is surrounded by six other subpixels.
  • subpixels that emit light of the same color are arranged so that they are not adjacent to each other. For example, when focusing on subpixel 110R, three subpixels 110G and three subpixels 110B are arranged alternately to surround it.
  • Figure 12G shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels arranged in the row direction (for example, subpixels 110R and 110G, or subpixels 110G and 110B) are misaligned.
  • subpixel 110R is a subpixel R that emits red light
  • subpixel 110G is a subpixel G that emits green light
  • subpixel 110B is a subpixel B that emits blue light.
  • the configuration of the subpixels is not limited to this, and the colors that the subpixels emit and their order of arrangement can be determined appropriately.
  • subpixel 110G may be a subpixel R that emits red light
  • subpixel 110R may be a subpixel G that emits green light.
  • the finer the pattern to be processed the more the effects of light diffraction cannot be ignored, and this causes a loss of fidelity when the photomask pattern is transferred by exposure, making it difficult to process the resist mask into the desired shape.
  • the photomask pattern is rectangular, a pattern with rounded corners is likely to be formed.
  • the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.
  • the organic compound layer is processed into an island shape using a resist mask.
  • the resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat resistance temperature of the organic compound layer. Therefore, depending on the heat resistance temperature of the material of the organic compound layer and the curing temperature of the resist material, the resist film may not be cured sufficiently.
  • a resist film that is not cured sufficiently may have a shape that is different from the desired shape during processing.
  • the top surface shape of the organic compound layer may be a polygon with rounded corners, an ellipse, a circle, or the like. For example, when attempting to form a resist mask with a square top surface shape, a resist mask with a circular top surface shape is formed, and the top surface shape of the organic compound layer may become circular.
  • a technique for correcting the mask pattern in advance may be used so that the design pattern and the transfer pattern match.
  • OPC Optical Proximity Correction
  • a correction pattern is added to the corners of figures on the mask pattern, for example.
  • a pixel can be configured to have four types of subpixels.
  • the pixel 178 shown in Figures 13A to 13C has a stripe arrangement.
  • Figure 13A shows an example where each subpixel has a rectangular top surface shape
  • Figure 13B shows an example where each subpixel has a top surface shape that combines two semicircles and a rectangle
  • Figure 13C shows an example where each subpixel has an elliptical top surface shape.
  • the pixels 178 shown in Figures 13D to 13F are arranged in a matrix.
  • Figure 13D shows an example in which each subpixel has a square top surface shape
  • Figure 13E shows an example in which each subpixel has a roughly square top surface shape with rounded corners
  • Figure 13F shows an example in which each subpixel has a circular top surface shape.
  • Figures 13G and 13H show an example in which one pixel 178 is configured with two rows and three columns.
  • Pixel 178 shown in FIG. 13G has three subpixels (subpixel 110R, subpixel 110G, and subpixel 110B) in the top row (first row) and one subpixel (subpixel 110W) in the bottom row (second row).
  • pixel 178 has subpixel 110R in the left column (first column), subpixel 110G in the center column (second column), subpixel 110B in the right column (third column), and subpixel 110W across these three columns.
  • the pixel 178 shown in FIG. 13H has three subpixels (subpixels 110R, 110G, and 110B) in the top row (first row) and three subpixels 110W in the bottom row (second row).
  • the pixel 178 has subpixels 110R and 110W in the left column (first column), subpixels 110G and 110W in the center column (second column), and subpixels 110B and 110W in the right column (third column).
  • FIG. 13H by aligning the arrangement of the subpixels in the top row and the bottom row, it is possible to efficiently remove dust that may occur during the manufacturing process, for example. Therefore, a light-emitting device with high display quality can be provided.
  • subpixels 110R, 110G, and 110B are arranged in a stripe pattern, improving display quality.
  • Figure 13I shows an example in which one pixel 178 is configured with 3 rows and 2 columns.
  • Pixel 178 shown in FIG. 13I has subpixel 110R in the top row (first row), subpixel 110G in the center row (second row), subpixel 110B across the first and second rows, and one subpixel (subpixel 110W) in the bottom row (third row).
  • pixel 178 has subpixel 110R and subpixel 110G in the left column (first column), subpixel 110B in the right column (second column), and subpixel 110W across these two columns.
  • the layout of subpixels 110R, 110G, and 110B is a so-called S-stripe arrangement, which improves display quality.
  • subpixel 178 shown in Figures 13A to 13I is composed of four subpixels: subpixel 110R, subpixel 110G, subpixel 110B, and subpixel 110W.
  • subpixel 110R can be a subpixel that emits red light
  • subpixel 110G can be a subpixel that emits green light
  • subpixel 110B can be a subpixel that emits blue light
  • subpixel 110W can be a subpixel that emits white light.
  • At least one of subpixels 110R, subpixel 110G, subpixel 110B, and subpixel 110W can be a subpixel that emits cyan light, a subpixel that emits magenta light, a subpixel that emits yellow light, or a subpixel that emits near-infrared light.
  • the light-emitting device can apply various layouts to pixels each having a subpixel with a light-emitting device.
  • the light emitting device of this embodiment can be a high-definition light emitting device. Therefore, the light emitting device of this embodiment can be used, for example, in the display section of a wristwatch-type or bracelet-type information terminal (wearable device), as well as in the display section of a wearable device that can be worn on the head, such as a head-mounted display (HMD) or other VR device, and a glasses-type AR device.
  • a wearable device such as a head-mounted display (HMD) or other VR device, and a glasses-type AR device.
  • HMD head-mounted display
  • AR device glasses-type AR device
  • the light-emitting device of this embodiment can be a high-resolution light-emitting device or a large light-emitting device. Therefore, the light-emitting device of this embodiment can be used in electronic devices with relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display parts of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproduction devices.
  • Display module 14A shows a perspective view of a display module 280.
  • the display module 280 has a light emitting device 100A and an FPC 290.
  • the light emitting device included in the display module 280 is not limited to the light emitting device 100A, and may be any of the light emitting device 100B and the light emitting device 100D described later.
  • the display module 280 has a substrate 291 and a substrate 292.
  • the display module 280 has a display section 281.
  • the display section 281 is an area that displays an image in the display module 280, and is an area in which light from each pixel provided in a pixel section 284 described later can be viewed.
  • Figure 14B shows a perspective view that shows a schematic configuration on the substrate 291 side.
  • a circuit section 282 On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked.
  • a terminal section 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel section 284.
  • the terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286 that is composed of multiple wirings.
  • the pixel section 284 has a number of pixels 284a arranged periodically. An enlarged view of one pixel 284a is shown on the right side of FIG. 14B.
  • FIG. 14B shows an example in which the pixel 284a has the same configuration as the pixel 178 shown in FIG. 4.
  • the pixel circuit section 283 has a number of pixel circuits 283a arranged periodically.
  • Each pixel circuit 283a is a circuit that controls the driving of multiple elements in one pixel 284a.
  • One pixel circuit 283a can be configured to have three circuits that control the light emission of one light-emitting device.
  • the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitance for each light-emitting device. At this time, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. This realizes an active matrix type light-emitting device.
  • the circuit portion 282 has a circuit that drives each pixel circuit 283a of the pixel circuit portion 283.
  • the circuit portion 282 has one or both of a gate line driver circuit and a source line driver circuit.
  • the circuit portion 282 may have at least one of an arithmetic circuit, a memory circuit, a power supply circuit, etc.
  • the FPC 290 functions as wiring for supplying a video signal, a power supply potential, etc. from the outside to the circuit section 282.
  • an IC may be mounted on the FPC 290.
  • the display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are stacked under the pixel section 284, so that the aperture ratio (effective display area ratio) of the display section 281 can be extremely high.
  • the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less.
  • the pixels 284a can be arranged at an extremely high density, so that the resolution of the display section 281 can be extremely high.
  • the pixels 284a are arranged in the display section 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.
  • Such a display module 280 is extremely high-definition and therefore can be suitably used in VR devices such as HMDs or glasses-type AR devices.
  • the display module 280 has an extremely high-definition display section 281, so that even if the display section is enlarged with a lens, the pixels are not visible, and a highly immersive display can be performed.
  • the display module 280 is not limited to this and can be suitably used in electronic devices with relatively small display sections. For example, it can be suitably used in the display section of a wearable electronic device such as a wristwatch.
  • the light emitting device 100A shown in FIG. 15A includes a substrate 301, a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, a capacitor 240, and a transistor 310.
  • the substrate 301 corresponds to the substrate 291 in FIG. 14A and FIG. 14B.
  • the transistor 310 is a transistor having a channel formation region in the substrate 301.
  • a semiconductor substrate such as a single crystal silicon substrate can be used as the substrate 301.
  • the transistor 310 has a part of the substrate 301, a conductive layer 311, a low resistance region 312, an insulating layer 313, and an insulating layer 314.
  • the conductive layer 311 functions as a gate electrode.
  • the insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer.
  • the low resistance region 312 is a region in which the substrate 301 is doped with impurities, and functions as a source or drain.
  • the insulating layer 314 is provided to cover the side surface of the conductive layer 311.
  • an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.
  • an insulating layer 261 is provided covering the transistor 310, and a capacitor 240 is provided on the insulating layer 261.
  • Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 located therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.
  • the conductive layer 241 is provided on the insulating layer 261 and is embedded in the insulating layer 254.
  • the conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 embedded in the insulating layer 261.
  • the insulating layer 243 is provided to cover the conductive layer 241.
  • the conductive layer 245 is provided in a region that overlaps with the conductive layer 241 via the insulating layer 243.
  • FIG. 15A shows an example in which light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B have the layered structure shown in FIG. 7A.
  • An insulator is provided in the region between adjacent light-emitting devices. For example, in FIG. 15A, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in the region.
  • Insulating layer 156R is provided to have an area overlapping with the side of conductive layer 151R of light-emitting device 130R
  • insulating layer 156G is provided to have an area overlapping with the side of conductive layer 151G of light-emitting device 130G
  • insulating layer 156B is provided to have an area overlapping with the side of conductive layer 151B of light-emitting device 130B.
  • conductive layer 152R is provided to cover conductive layer 151R and insulating layer 156R
  • conductive layer 152G is provided to cover conductive layer 151G and insulating layer 156G
  • conductive layer 152B is provided to cover conductive layer 151B and insulating layer 156B.
  • a sacrificial layer 158R is located on the organic compound layer 103R of the light-emitting device 130R
  • a sacrificial layer 158G is located on the organic compound layer 103G of the light-emitting device 130G
  • a sacrificial layer 158B is located on the organic compound layer 103B of the light-emitting device 130B.
  • the conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source or drain of the transistor 310 by the insulating layer 243, the insulating layer 255, the insulating layer 174, the plug 256 embedded in the insulating layer 175, the conductive layer 241 embedded in the insulating layer 254, and the plug 271 embedded in the insulating layer 261.
  • the height of the upper surface of the insulating layer 175 and the height of the upper surface of the plug 256 are the same or approximately the same.
  • Various conductive materials can be used for the plug.
  • a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B.
  • the substrate 120 is attached to the protective layer 131 by a resin layer 122.
  • the substrate 120 corresponds to the substrate 292 in FIG. 14A.
  • Figure 15B is a modified example of the light emitting device 100A shown in Figure 15A.
  • the light emitting device shown in Figure 15B has colored layers 132R, 132G, and 132B, and the light emitting device 130 has an area where it overlaps with one of the colored layers 132R, 132G, and 132B.
  • the light emitting device 130 can emit, for example, white light.
  • the colored layer 132R can transmit red light
  • the colored layer 132G can transmit green light
  • the colored layer 132B can transmit blue light.
  • FIG. 16 shows a perspective view of light emitting device 100B
  • FIG. 17A shows a cross-sectional view of light emitting device 100B.
  • Light emitting device 100B has a configuration in which substrate 352 and substrate 351 are bonded together.
  • substrate 352 is indicated by a dashed line.
  • the light-emitting device 100B has a pixel portion 177, a connection portion 140, a circuit 356, wiring 355, and the like.
  • FIG. 16 shows an example in which an IC 354 and an FPC 353 are mounted on the light-emitting device 100B. Therefore, the configuration shown in FIG. 16 can also be called a display module having the light-emitting device 100B, an IC (integrated circuit), and an FPC.
  • a light-emitting device with a connector such as an FPC attached to its substrate, or a light-emitting device with an IC mounted on its substrate, is called a display module.
  • connection portion 140 is provided outside the pixel portion 177.
  • the connection portion 140 can be provided along one side or multiple sides of the pixel portion 177. There may be one or multiple connection portions 140.
  • FIG. 16 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion.
  • the connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.
  • a scanning line driver circuit can be used as the circuit 356.
  • the wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356.
  • the signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.
  • an example is shown in which an IC 354 is provided on a substrate 351 by a chip on glass (COG) method or a chip on film (COF) method.
  • COG chip on glass
  • COF chip on film
  • an IC having a scanning line driver circuit or a signal line driver circuit can be used as the IC 354.
  • the light-emitting device 100B and the display module may be configured without an IC.
  • the IC may be mounted on an FPC by a COF method, for example.
  • Figure 17A shows an example of a cross section of the light-emitting device 100B when a portion of the region including the FPC 353, a portion of the circuit 356, a portion of the pixel portion 177, a portion of the connection portion 140, and a portion of the region including the end portion are cut away.
  • the light emitting device 100B shown in FIG. 17A has a transistor 201, a transistor 205, a light emitting device 130R that emits red light, a light emitting device 130G that emits green light, and a light emitting device 130B between a substrate 351 and a substrate 352.
  • Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B each have the layered structure shown in FIG. 7A, except that the pixel electrodes have different configurations. For details of the light-emitting devices, see embodiments 1 and 2.
  • Light-emitting device 130R has conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R.
  • Light-emitting device 130G has conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G.
  • Light-emitting device 130B has conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B.
  • conductive layer 224R, conductive layer 151R, and conductive layer 152R can all be collectively referred to as the pixel electrode of light-emitting device 130R, and conductive layer 151R and conductive layer 152R excluding conductive layer 224R can also be referred to as the pixel electrode of light-emitting device 130R.
  • conductive layer 224G, conductive layer 151G, and conductive layer 152G can be collectively referred to as the pixel electrode of light-emitting device 130G, and conductive layer 151G and conductive layer 152G excluding conductive layer 224G can be collectively referred to as the pixel electrode of light-emitting device 130G.
  • conductive layer 224B, conductive layer 151B, and conductive layer 152B can be collectively referred to as the pixel electrode of light-emitting device 130B, and conductive layer 151B and conductive layer 152B excluding conductive layer 224B can be collectively referred to as the pixel electrode of light-emitting device 130B.
  • the conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214.
  • the end of the conductive layer 151R is located outside the end of the conductive layer 224R.
  • the insulating layer 156R is provided so as to have an area in contact with the side surface of the conductive layer 151R, and the conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R.
  • the conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in the light-emitting device 130G, and the conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in the light-emitting device 130B are similar to the conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in the light-emitting device 130R, so detailed description will be omitted.
  • Conductive layers 224R, 224G, and 224B have recesses formed therein to cover the openings provided in insulating layer 214. Layer 128 is embedded in the recesses.
  • Layer 128 has the function of planarizing the recesses of conductive layer 224R, conductive layer 224G, and conductive layer 224B.
  • Conductive layer 151R, conductive layer 151G, and conductive layer 151B which are electrically connected to conductive layer 224R, conductive layer 224G, and conductive layer 224B, are provided on conductive layer 224R, conductive layer 224G, and conductive layer 224B and layer 128. Therefore, the regions overlapping with the recesses of conductive layer 224R, conductive layer 224G, and conductive layer 224B can also be used as light-emitting regions, and the aperture ratio of the pixel can be increased.
  • Layer 128 may be an insulating layer or a conductive layer.
  • Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for layer 128.
  • layer 128 is preferably formed using an insulating material, and is particularly preferably formed using an organic insulating material.
  • the organic insulating material that can be used for the insulating layer 127 described above can be used for layer 128.
  • a protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B.
  • the protective layer 131 and the substrate 352 are bonded via an adhesive layer 142.
  • the substrate 352 is provided with a light-shielding layer 157.
  • a solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 130.
  • the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid sealing structure is applied.
  • the space may be filled with an inert gas (nitrogen, argon, etc.) and a hollow sealing structure may be applied.
  • the adhesive layer 142 may be provided so as not to overlap with the light-emitting device.
  • the space may also be filled with a resin different from the adhesive layer 142 provided in a frame shape.
  • connection portion 140 has a conductive layer 224C obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive layer 151C obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive layer 152C obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B.
  • an insulating layer 156C is provided so as to have an area overlapping with the side of the conductive layer 151C.
  • the light emitting device 100B is a top emission type. Light emitted by the light emitting device is emitted to the substrate 352 side. It is preferable to use a material that is highly transparent to visible light for the substrate 352.
  • the pixel electrode contains a material that reflects visible light
  • the counter electrode (common electrode 155) contains a material that transmits visible light.
  • Transistor 201 and transistor 205 are both formed on substrate 351. These transistors can be manufactured using the same materials and the same process.
  • an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order.
  • a part of the insulating layer 211 functions as a gate insulating layer for each transistor.
  • a part of the insulating layer 213 functions as a gate insulating layer for each transistor.
  • the insulating layer 215 is provided to cover the transistor.
  • the insulating layer 214 is provided to cover the transistor and functions as a planarizing layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.
  • a material that is difficult for impurities such as water and hydrogen to diffuse into at least one of the insulating layers that covers the transistor This allows the insulating layer to function as a barrier layer. With this configuration, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the light-emitting device.
  • an inorganic insulating film for each of the insulating layers 211, 213, and 215.
  • the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film can also be used.
  • two or more of the above insulating films can be stacked.
  • An organic insulating layer is suitable for the insulating layer 214 that functions as a planarizing layer.
  • Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.
  • the insulating layer 214 may also have a laminated structure of an organic insulating layer and an inorganic insulating layer.
  • the outermost layer of the insulating layer 214 preferably has a function as an etching protection layer.
  • a recess may be provided in the insulating layer 214 when the conductive layer 224R, the conductive layer 151R, the conductive layer 152R, or the like is processed.
  • Transistor 201 and transistor 205 have conductive layer 221 functioning as a gate, insulating layer 211 functioning as a gate insulating layer, conductive layer 222a and conductive layer 222b functioning as a source and drain, semiconductor layer 231, insulating layer 213 functioning as a gate insulating layer, and conductive layer 223 functioning as a gate.
  • the same hatching pattern is applied to multiple layers obtained by processing the same conductive film.
  • Insulating layer 211 is located between conductive layer 221 and semiconductor layer 231.
  • Insulating layer 213 is located between conductive layer 223 and semiconductor layer 231.
  • the structure of the transistor in the light-emitting device of this embodiment is not particularly limited.
  • a planar transistor, a staggered transistor, or an inverted staggered transistor can be used.
  • the transistor structure may be either a top-gate type or a bottom-gate type.
  • a gate may be provided above and below a semiconductor layer in which a channel is formed.
  • Transistor 201 and transistor 205 are configured to sandwich a semiconductor layer in which a channel is formed between two gates.
  • the two gates may be connected and the same signal may be supplied to drive the transistor.
  • the threshold voltage of the transistor may be controlled by supplying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.
  • the crystallinity of the semiconductor material used in the transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used.
  • the use of a crystalline semiconductor is preferable because it can suppress deterioration of the transistor characteristics.
  • the semiconductor layer of the transistor preferably contains a metal oxide.
  • the light-emitting device of this embodiment preferably uses a transistor that uses a metal oxide in the channel formation region (hereinafter, referred to as an OS transistor).
  • crystalline oxide semiconductors examples include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.
  • a transistor using silicon in the channel formation region may be used.
  • silicon examples include single crystal silicon, polycrystalline silicon, and amorphous silicon.
  • a transistor having low temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as "LTPS transistor") may be used.
  • LTPS transistors have high field effect mobility and good frequency characteristics.
  • Si transistors such as LTPS transistors
  • circuits that need to be driven at high frequencies can be built on the same substrate as the display unit. This simplifies the external circuits mounted on the light-emitting device, reducing component and mounting costs.
  • OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon.
  • the leakage current between the source and drain of an OS transistor in an off state (hereinafter also referred to as "off current") is extremely small, and the charge accumulated in a capacitor connected in series with the transistor can be held for a long period of time.
  • the use of an OS transistor can reduce the power consumption of a light-emitting device.
  • the OS transistor when the transistor operates in the saturation region, the OS transistor can reduce the change in source-drain current in response to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely determined by changing the gate-source voltage, and the amount of current flowing to the light-emitting device can be controlled. This allows for a larger gradation in the pixel circuit.
  • an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. For this reason, by using an OS transistor as a driving transistor, a stable current can be passed through the light-emitting device, for example, even when the current-voltage characteristics of the light-emitting device vary. In other words, when the OS transistor operates in the saturation region, the source-drain current hardly changes even when the source-drain voltage is increased, so the light emission luminance of the light-emitting device can be stabilized.
  • the semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc.
  • M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) also referred to as IGZO
  • it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) also referred to as IAZO
  • IAGZO oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn)
  • the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M.
  • the transistors in the circuit 356 and the transistors in the pixel portion 177 may have the same structure or different structures.
  • the transistors in the circuit 356 may all have the same structure or there may be two or more types.
  • the transistors in the pixel portion 177 may all have the same structure or there may be two or more types.
  • All of the transistors in the pixel portion 177 may be OS transistors, all of the transistors in the pixel portion 177 may be Si transistors, or some of the transistors in the pixel portion 177 may be OS transistors and the rest may be Si transistors.
  • an LTPS transistor and an OS transistor in the pixel portion 177, a light-emitting device with low power consumption and high driving capability can be realized.
  • a configuration in which an LTPS transistor and an OS transistor are combined may be called LTPO.
  • an OS transistor as a transistor that functions as a switch for controlling the conduction/non-conduction of wiring, and an LTPS transistor as a transistor for controlling current.
  • one of the transistors in the pixel portion 177 functions as a transistor for controlling the current flowing to the light-emitting device, and can be called a driving transistor.
  • One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This makes it possible to increase the current flowing to the light-emitting device in the pixel circuit.
  • the other transistor in the pixel portion 177 functions as a switch for controlling pixel selection/non-selection and can also be called a selection transistor.
  • the gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor as the selection transistor. This allows the gradation of the pixel to be maintained even if the frame frequency is significantly reduced (for example, 1 fps or less), so that power consumption can be reduced by stopping the driver when displaying a still image.
  • the light-emitting device of one embodiment of the present invention can achieve a high aperture ratio, high definition, high display quality, and low power consumption.
  • the light-emitting device of one embodiment of the present invention has an OS transistor and a light-emitting device with an MML structure. With this configuration, it is possible to extremely reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (which may be referred to as lateral leakage current, horizontal leakage current, or lateral leakage current). In addition, with the above configuration, when an image is displayed on the light-emitting device, a viewer can observe one or more of image sharpness, image sharpness, high saturation, and high contrast ratio.
  • the layers provided between the light-emitting devices are separated, eliminating side leakage or greatly reducing side leakage.
  • FIGS 17B and 17C show other examples of transistor configurations.
  • the transistor 209 and the transistor 210 each have a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 having a channel formation region 231i and a pair of low resistance regions 231n, a conductive layer 222a connected to one of the pair of low resistance regions 231n, a conductive layer 222b connected to the other of the pair of low resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223.
  • the insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i.
  • the insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i.
  • an insulating layer 218 covering the transistor may be provided.
  • the insulating layer 225 covers the top surface and side surface of the semiconductor layer 231.
  • the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively.
  • One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.
  • the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low resistance region 231n.
  • the structure shown in FIG. 17C can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask.
  • the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are each connected to the low resistance region 231n through the openings in the insulating layer 215.
  • a connection portion 204 is provided in an area of the substrate 351 where the substrate 352 does not overlap.
  • the wiring 355 is electrically connected to the FPC 353 via the conductive layer 166 and the connection layer 242.
  • the conductive layer 166 is an example of a laminated structure of a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B.
  • the conductive layer 166 is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connection layer 242.
  • the light-shielding layer 157 can be provided between adjacent light-emitting devices, on the connection portion 140, on the circuit 356, and the like.
  • various optical components can be disposed on the outside of the substrate 352.
  • Substrate 351 and substrate 352 can each be made of a material that can be used for substrate 120.
  • the adhesive layer 142 can be made of a material that can be used for the resin layer 122.
  • connection layer 242 may be an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP), etc.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • the light emitting device 100C shown in FIG. 18 differs from the light emitting device 100A shown in FIG. 17 mainly in that the light emitting device 100C is a bottom emission type light emitting device.
  • Light emitted by the light-emitting device is emitted toward the substrate 351. It is preferable to use a material that is highly transparent to visible light for the substrate 351. On the other hand, the translucency of the material used for the substrate 352 does not matter.
  • FIG. 18 shows an example in which the light-shielding layer 157 is provided on the substrate 351, the insulating layer 153 is provided on the light-shielding layer 157, and the transistors 201, 205, etc. are provided on the insulating layer 153.
  • Light-emitting device 130R has conductive layer 112R, conductive layer 126R on conductive layer 112R, and conductive layer 129R on conductive layer 126R.
  • Light-emitting device 130B has conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.
  • the conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are each made of a material that is highly transparent to visible light. It is preferable to use a material that reflects visible light for the common electrode 155.
  • the light-emitting device 130G is not shown in FIG. 18, the light-emitting device 130G is also provided.
  • the light emitting device 100D shown in FIG. 19A is a modification of the light emitting device 100B shown in FIG. 17A, and differs from the light emitting device 100B mainly in that it has colored layers 132R, 132G, and 132B.
  • the light-emitting device 130 has an area that overlaps one of the colored layers 132R, 132G, and 132B.
  • the colored layers 132R, 132G, and 132B can be provided on the surface of the substrate 352 facing the substrate 351.
  • the ends of the colored layers 132R, 132G, and 132B can overlap the light-shielding layer 157.
  • the light-emitting device 130 can emit, for example, white light.
  • the colored layer 132R can transmit red light
  • the colored layer 132G can transmit green light
  • the colored layer 132B can transmit blue light.
  • the light-emitting device 100D may be configured such that the colored layers 132R, 132G, and 132B are provided between the protective layer 131 and the adhesive layer 142.
  • FIGS. 19B to 19D show modified examples of layer 128.
  • the top surface of layer 128 can be configured to have a recessed shape in the center and its vicinity in cross-sectional view, that is, a shape having a concave curved surface.
  • the upper surface of layer 128 can be configured to have a shape in which the center and its vicinity are bulged in cross section, that is, a shape having a convex curved surface.
  • the upper surface of layer 128 may have one or both of a convex curved surface and a concave curved surface.
  • the number of convex curved surfaces and concave curved surfaces that the upper surface of layer 128 has is not limited, and may be one or more.
  • the height of the upper surface of layer 128 and the height of the upper surface of conductive layer 224R may be the same or approximately the same, or may be different from each other.
  • the height of the upper surface of layer 128 may be lower or higher than the height of the upper surface of conductive layer 224R.
  • FIG. 19B can be said to be an example in which layer 128 is contained inside a recess formed in conductive layer 224R.
  • layer 128 may be present outside the recess formed in conductive layer 224R, that is, the width of the top surface of layer 128 may be wider than the recess.
  • the electronic device of this embodiment has a light-emitting device of one embodiment of the present invention in a display portion.
  • the light-emitting device of one embodiment of the present invention is highly reliable and can easily achieve high definition and high resolution. Therefore, the light-emitting device can be used in the display portion of various electronic devices.
  • Examples of electronic devices include television devices, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and audio playback devices.
  • the light-emitting device of one embodiment of the present invention can be used favorably in electronic devices having a relatively small display area because it can increase the resolution.
  • electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as head-mounted wearable devices such as VR devices such as head-mounted displays, glasses-type AR devices, and MR devices.
  • the light-emitting device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels).
  • an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels).
  • a resolution of 4K, 8K, or more is preferable.
  • the pixel density (resolution) of the light-emitting device of one embodiment of the present invention is preferably 100 ppi or more, more preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more.
  • the screen ratio aspect ratio
  • the light-emitting device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.
  • the electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared light).
  • a sensor including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared light).
  • the electronic device of this embodiment can have various functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.
  • a function to display various information still images, videos, text images, etc.
  • a touch panel function a function to display a calendar, date or time, etc.
  • a function to execute various software (programs) a wireless communication function
  • a function to read out programs or data recorded on a recording medium etc.
  • FIG. 20A to 20D An example of a wearable device that can be worn on the head will be described using Figures 20A to 20D.
  • These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content.
  • a function to display AR content a function to display AR content
  • VR content a function to display VR content
  • SR content a function to display SR content
  • MR content a function to display MR content
  • Electronic device 700A shown in FIG. 20A and electronic device 700B shown in FIG. 20B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.
  • a light-emitting device can be applied to the display panel 751. Therefore, the electronic device can be highly reliable.
  • Each of the electronic devices 700A and 700B can project an image displayed on the display panel 751 onto the display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on the transmitted image visually recognized through the optical member 753. Therefore, each of the electronic devices 700A and 700B is an electronic device capable of AR display.
  • Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image of the front as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.
  • an acceleration sensor such as a gyro sensor
  • the communication unit has a wireless communication device, and can supply, for example, a video signal through the wireless communication device.
  • a connector can be provided to which a cable through which a video signal and a power supply potential can be connected.
  • electronic device 700A and electronic device 700B are provided with batteries, which can be charged wirelessly and/or wired.
  • the housing 721 may be provided with a touch sensor module.
  • the touch sensor module has a function of detecting that the outer surface of the housing 721 is touched.
  • the touch sensor module can detect a tap operation, a slide operation, or the like by the user, and can execute various processes. For example, a tap operation can execute processes such as pausing or resuming a video, and a slide operation can execute processes such as fast-forwarding or rewinding.
  • a tap operation can execute processes such as pausing or resuming a video
  • a slide operation can execute processes such as fast-forwarding or rewinding.
  • the range of operations can be expanded.
  • touch sensors can be used as the touch sensor module.
  • various types can be adopted, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type.
  • a photoelectric conversion device (also referred to as a "photoelectric conversion element") can be used as the light receiving element.
  • the active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.
  • Electronic device 800A shown in FIG. 20C and electronic device 800B shown in FIG. 20D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825 (not shown in FIG. 20D), and a pair of lenses 832 (not shown in FIG. 20C).
  • a light-emitting device can be applied to the display portion 820. Therefore, the electronic device can be highly reliable.
  • the display unit 820 is provided inside the housing 821 at a position that can be seen through the lens 832. In addition, by displaying different images on the pair of display units 820, it is also possible to perform three-dimensional display using parallax.
  • Each of the electronic devices 800A and 800B can be considered to be electronic devices for VR.
  • a user wearing the electronic device 800A or the electronic device 800B can view the image displayed on the display unit 820 through the lens 832.
  • Electric device 800A and electronic device 800B each preferably have a mechanism that can adjust the left-right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. Also, it is preferable that they have a mechanism that adjusts the focus by changing the distance between lens 832 and display unit 820.
  • the mounting unit 823 allows the user to mount the electronic device 800A or electronic device 800B on the head.
  • the mounting unit 823 is shown shaped like the temples of glasses (also called “joints” or “temples”), but is not limited to this.
  • the mounting unit 823 only needs to be wearable by the user, and may be shaped like a helmet or band, for example.
  • the imaging unit 825 has a function of acquiring external information.
  • the data acquired by the imaging unit 825 can be output to the display unit 820.
  • An image sensor can be used for the imaging unit 825.
  • multiple cameras may be provided to support multiple angles of view, such as telephoto and wide angle.
  • a distance measuring sensor capable of measuring the distance to an object
  • the imaging unit 825 is one aspect of the detection unit.
  • the detection unit for example, an image sensor or a distance image sensor such as a LIDAR (Light Detection and Ranging) can be used.
  • LIDAR Light Detection and Ranging
  • the electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone.
  • a vibration mechanism that functions as a bone conduction earphone.
  • a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This makes it possible to enjoy video and audio by simply wearing the electronic device 800A without the need for separate audio equipment such as headphones, earphones, or speakers.
  • Each of the electronic devices 800A and 800B may have an input terminal.
  • the input terminal can be connected to a cable that supplies a video signal from a video output device or the like, and power for charging a battery provided within the electronic device.
  • the electronic device of one embodiment of the present invention may have a function of wireless communication with the earphone 750.
  • the earphone 750 has a communication unit (not shown) and has a wireless communication function.
  • the earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function.
  • the electronic device 700A shown in FIG. 20A has a function of transmitting information to the earphone 750 through the wireless communication function.
  • the electronic device 800A shown in FIG. 20C has a function of transmitting information to the earphone 750 through the wireless communication function.
  • the electronic device may also have an earphone unit.
  • the electronic device 700B shown in FIG. 20B has an earphone unit 727.
  • the earphone unit 727 and the control unit may be configured to be connected to each other by wire.
  • a portion of the wiring connecting the earphone unit 727 and the control unit may be disposed inside the housing 721 or the attachment unit 723.
  • electronic device 800B shown in FIG. 20D has earphone unit 827.
  • earphone unit 827 and control unit 824 can be configured to be connected to each other by wire.
  • Part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or mounting unit 823.
  • earphone unit 827 and mounting unit 823 may have magnets. This allows earphone unit 827 to be fixed to mounting unit 823 by magnetic force, which is preferable as it makes storage easier.
  • the electronic device may have an audio output terminal to which earphones or headphones can be connected.
  • the electronic device may also have one or both of an audio input terminal and an audio input mechanism.
  • a sound collection device such as a microphone can be used as the audio input mechanism.
  • the electronic device may be endowed with the functionality of a so-called headset.
  • both glasses-type devices such as electronic device 700A and electronic device 700B
  • goggle-type devices such as electronic device 800A and electronic device 800B
  • the electronic device of one aspect of the present invention can transmit information to the earphones via a wired or wireless connection.
  • the electronic device 6500 shown in FIG. 21A is a portable information terminal that can be used as a smartphone.
  • the electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • the display portion 6502 has a touch panel function.
  • a light-emitting device can be applied to the display portion 6502. Therefore, the electronic device can be highly reliable.
  • Figure 21B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.
  • a transparent protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.
  • the display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 by an adhesive layer (not shown).
  • a part of the display panel 6511 is folded back, and the FPC 6515 is connected to the folded back part.
  • An IC 6516 is mounted on the FPC 6515.
  • the FPC 6515 is connected to a terminal provided on a printed circuit board 6517.
  • the flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized.
  • the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while keeping the thickness of the electronic device small.
  • a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.
  • FIG 21C shows an example of a television device.
  • a display unit 7000 is built into a housing 7171.
  • the housing 7171 is supported by a stand 7173.
  • a light-emitting device can be applied to the display portion 7000. Therefore, the electronic device can be highly reliable.
  • the television device 7100 shown in FIG. 21C can be operated using an operation switch provided on the housing 7171 and a separate remote control 7151.
  • the display unit 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display unit 7000 with a finger or the like.
  • the remote control 7151 may have a display unit that displays information output from the remote control 7151.
  • the channel and volume can be operated using the operation keys or touch panel provided on the remote control 7151, and the image displayed on the display unit 7000 can be operated.
  • the television device 7100 is configured to include a receiver and a modem.
  • the receiver can receive general television broadcasts.
  • by connecting to a wired or wireless communication network via the modem it is also possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.
  • FIG. 21D shows an example of a notebook personal computer.
  • the notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • the display unit 7000 is built into the housing 7211.
  • a light-emitting device can be applied to the display portion 7000. Therefore, the electronic device can be highly reliable.
  • Figures 21E and 21F show an example of digital signage.
  • the digital signage 7300 shown in FIG. 21E includes a housing 7301, a display unit 7000, and a speaker 7303. It may also include LED lamps, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.
  • Figure 21F shows a digital signage 7400 attached to a cylindrical pole 7401.
  • the digital signage 7400 has a display unit 7000 that is provided along the curved surface of the pole 7401.
  • a light-emitting device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can be highly reliable.
  • the larger the display unit 7000 the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it catches people's attention, which can increase the advertising effectiveness of, for example, advertisements.
  • a touch panel By applying a touch panel to the display unit 7000, not only can images or videos be displayed on the display unit 7000, but the user can also intuitively operate it, which is preferable. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.
  • the digital signage 7300 or the digital signage 7400 can be linked via wireless communication with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user.
  • advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411.
  • the display on the display unit 7000 can be switched by operating the information terminal 7311 or the information terminal 7411.
  • the digital signage 7300 or the digital signage 7400 execute a game using the screen of the information terminal 7311 or the information terminal 7411 as an operating means (controller). This allows an unspecified number of users to participate in and enjoy the game at the same time.
  • the electronic device shown in Figures 22A to 22G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 9008, etc.
  • the electronic devices shown in Figures 22A to 22G have various functions. For example, they may have a function of displaying various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date or time, etc., a function of controlling processing by various software (programs), a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, etc.
  • the functions of the electronic device are not limited to these, and the electronic device may have various functions.
  • the electronic device may have multiple display units.
  • the electronic device may have a camera or the like to capture still images or videos and store them on a recording medium (external or built into the camera), a function of displaying the captured images on the display unit, etc.
  • FIG. 22A is a perspective view showing a mobile information terminal 9171.
  • the mobile information terminal 9171 can be used as, for example, a smartphone.
  • the mobile information terminal 9171 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like.
  • the mobile information terminal 9171 can display text and image information on multiple surfaces.
  • FIG. 22A shows an example in which three icons 9050 are displayed.
  • Information 9051 shown in a dashed rectangle can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming e-mail, SNS, telephone calls, etc., the title of e-mail or SNS, the sender's name, the date and time, the remaining battery level, radio wave strength, etc.
  • the icon 9050, etc. may be displayed at the position where the information 9051 is displayed.
  • FIG 22B is a perspective view showing a mobile information terminal 9172.
  • the mobile information terminal 9172 has a function of displaying information on three or more sides of the display unit 9001.
  • information 9052, information 9053, and information 9054 are each displayed on different sides.
  • a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9172 while the mobile information terminal 9172 is stored in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9172 out of the pocket and decide, for example, whether or not to answer a call.
  • FIG 22C is a perspective view showing a tablet terminal 9173.
  • the tablet terminal 9173 is capable of executing various applications such as mobile phone, e-mail, text viewing and creation, music playback, internet communication, and computer games, for example.
  • the tablet terminal 9173 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of the housing 9000, operation keys 9005 as operation buttons on the side of the housing 9000, and a connection terminal 9006 on the bottom.
  • FIG. 22D is a perspective view showing a wristwatch-type mobile information terminal 9200.
  • the mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark).
  • the display surface of the display unit 9001 is curved, and display can be performed along the curved display surface.
  • the mobile information terminal 9200 can also perform hands-free conversation by communicating with, for example, a headset capable of wireless communication.
  • the mobile information terminal 9200 can also perform data transmission with other information terminals and charge itself via a connection terminal 9006. Note that charging may be performed by wireless power supply.
  • FIG. 22E to 22G are perspective views showing a foldable mobile information terminal 9201.
  • FIG. 22E is a perspective view of the mobile information terminal 9201 in an unfolded state
  • FIG. 22G is a perspective view of the mobile information terminal 9201 in a folded state
  • FIG. 22F is a perspective view of the mobile information terminal 9201 in a state in the middle of changing from one of FIG. 22E and FIG. 22G to the other.
  • the mobile information terminal 9201 has excellent portability when folded, and has excellent display visibility due to a seamless wide display area when unfolded.
  • the display unit 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055.
  • the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.
  • light-emitting devices 1 (light-emitting devices 1A, 1B, and 1C) according to one embodiment of the present invention are fabricated using an MML process, and the evaluation results of the fabricated light-emitting devices 1 are described.
  • light-emitting device 1A, light-emitting device 1B, and light-emitting device 1C have a tandem structure in which a first EL layer 910, an intermediate layer 930, a second EL layer 920, and a second electrode 902 are stacked on a first electrode 901 formed on a substrate 900, which is a glass substrate.
  • the first EL layer 910 has a structure in which a hole injection layer 911, a first hole transport layer 912, a first light emitting layer 913, and a first electron transport layer 914 are sequentially stacked.
  • the intermediate layer 930 has an electron injection buffer layer 931, an electron relay layer 932, and a charge generating layer 933.
  • the electron injection buffer layer 931 has a structure in which a second electron injection buffer layer 931b is stacked on a first electron injection buffer layer 931a.
  • the second EL layer 920 has a structure in which a second hole transport layer 922, a second light emitting layer 923, a second electron transport layer 924, and an electron injection layer 925 are sequentially stacked.
  • first EL layer 910 corresponds to the first light-emitting unit 501 shown in FIG. 1A
  • second EL layer 920 corresponds to the second light-emitting unit 502 shown in FIG. 1A
  • intermediate layer 930 corresponds to the intermediate layer 116 shown in FIG. 1A.
  • light-emitting device 1A, light-emitting device 1B, and light-emitting device 1C each have a different structure of the electron injection buffer layer 931.
  • the structural formula of the organic compound used in light-emitting device 1 is shown below.
  • a first electrode 901 was formed on a glass substrate 900, which was a stack of a layer containing an alloy (also referred to as "APC") containing silver (Ag), palladium (Pd), and copper (Cu) and a layer containing indium tin oxide (also referred to as "ITSO") containing silicon oxide.
  • APC an alloy
  • Pd palladium
  • Cu copper
  • ITSO indium tin oxide
  • a 100-nm-thick APC layer was formed on the substrate 900 by a sputtering method, and then a 50-nm-thick ITSO layer was formed by a sputtering method.
  • the area of the first electrode 901 was 4 mm 2 (2 mm ⁇ 2 mm).
  • ITSO functions as an anode.
  • APC functions as a reflective electrode (electrode with high reflectivity for visible light)
  • ITSO functions as a transparent electrode (electrode with high transmittance for visible light).
  • the first electrode 901 which is composed of a laminate of APC and ITSO, essentially functions as a reflective electrode.
  • the first EL layer 910 was formed on the first electrode 901.
  • the surface of the substrate 900 on which the first electrode 901 was formed was washed with water, and then heat-treated at 200° C. for 1 hour. Thereafter, the substrate 900 was introduced into a vacuum deposition apparatus, and vacuum-baked at 170° C. for 30 minutes under reduced pressure of about 1 ⁇ 10 ⁇ 4 Pa in a heating chamber in the vacuum deposition apparatus. Then, the substrate was naturally cooled under reduced pressure for about 30 minutes.
  • the substrate 900 was fixed to a substrate holder provided in a vacuum deposition apparatus so that the surface on which the first electrode 901 was formed was facing downward.
  • PCBBiF N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine
  • OCHD-003 an electron acceptor material
  • PCBBiF was evaporated onto the hole injection layer 911 to a thickness of 120 nm to form a first hole transport layer 912.
  • a first light-emitting layer 913 was formed on the first hole-transporting layer 912.
  • 8-(1,1′:4′,1′′-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine abbreviation: 8mpTP-4mDBtPBfpm
  • 9-(2-naphthyl)-9′-phenyl-9H,9′H-3,3′-bicarbazole abbreviation: ⁇ NCCP
  • [2-d3-methyl-8-(2-pyridinyl- ⁇ N)benzofuro[2,3-b]pyridine- ⁇ C]bis[2-(5-d3-methyl-2-pyridinyl- ⁇ N2)phenyl- ⁇ C]iridium(III) abbreviation: Ir(5mppy-d3) 2
  • a first light-emitting layer 913 was formed by co-evaporating 8mpTP-4
  • a first electron injection buffer layer 931a was provided on the first electron transport layer 914.
  • the first electron injection buffer layer 931a was not provided in the light-emitting device 1A.
  • the light-emitting device 1B and the light-emitting device 1C were each provided with a first electron injection buffer layer 931a with a different configuration.
  • 1,1'-(2',7'-di-tert-butyl-9,9'-spirobi[9H-fluorene]-2,7-diyl)bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: 2',7'tBu-2,7hpp2SF) was evaporated onto the first electron transport layer 914 by a deposition method using resistance heating to a thickness of 2 nm, forming a first electron injection buffer layer 931a.
  • a mixed layer of 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) and 2',7'tBu-2,7hpp2SF was formed as the first electron injection buffer layer 931a.
  • a mixed layer of mPPhen2P and lithium oxide (Li 2 O) was formed as the second electron-injection buffer layer 931b.
  • a copper phthalocyanine (abbreviation: CuPc) film was formed to a thickness of 2 nm as the electron relay layer 932.
  • PCBBiF and OCHD-003 were co-deposited by a vapor deposition method using resistance heating so that PCBBiF:OCHD-003 was 1:0.15 (weight ratio) and the film thickness was 10 nm, forming the charge generation layer 933.
  • PCBBiF was evaporated onto the charge generation layer 933 to a thickness of 55 nm to form a second hole transport layer 922.
  • a second light-emitting layer 923 was formed on the second hole-transporting layer 922.
  • 2mPCCzPDBq was deposited on the second light-emitting layer 923 to a thickness of 20 nm, and then mPPhen2P was deposited on the second light-emitting layer 923 to a thickness of 20 nm to form a second electron transport layer 924.
  • the substrate 900 was removed from the vacuum deposition apparatus and exposed to the atmosphere (also referred to as “exposed to the atmosphere”). After that, an aluminum oxide (abbreviated as AlOx) film was formed on the second electron transport layer 924 by sputtering to a thickness of 30 nm.
  • AlOx aluminum oxide
  • a molybdenum film was formed on the AlOx film by sputtering to a thickness of 50 nm.
  • a resist mask was formed on the molybdenum film by photolithography, and the molybdenum film was processed into a predetermined shape. Specifically, a slit with a width of 3 ⁇ m was formed at a position 3.5 ⁇ m away from the end of the first electrode 901 when viewed from above the substrate 900.
  • the first EL layer 910, the intermediate layer 930, the second hole transport layer 922, the second light emitting layer 923, the second electron transport layer 924, and a portion of the aluminum oxide film were selectively removed using the molybdenum film as a mask. After that, the molybdenum film and the aluminum oxide film were removed by wet etching using a basic chemical solution.
  • the second electrode 902 functions as a cathode.
  • the second electrode 902 is a semi-transparent and semi-reflective electrode that has the function of reflecting light and the function of transmitting light.
  • DBT3P-II 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene)
  • ⁇ Characteristics of Light-Emitting Device 1> The various characteristics (device characteristics) of the fabricated light-emitting device 1A, light-emitting device 1B, and light-emitting device 1C were evaluated.
  • Fig. 24 shows the measurement results of the current density-voltage characteristics.
  • Fig. 25 shows the measurement results of the current efficiency-luminance characteristics.
  • Fig. 26 shows the measurement results of the normalized luminance-time change characteristics.
  • Fig. 27 shows the measurement results of the normalized voltage-time change characteristics.
  • light-emitting device 1A, light-emitting device 1B, and light-emitting device 1C all exhibit similarly high current efficiency values, and function as tandem devices. In other words, it can be said that among light-emitting device 1A, light-emitting device 1B, and light-emitting device 1C, light-emitting device 1C has the lowest power consumption.
  • FIG. 26 shows the change in luminance versus drive time when the light-emitting devices 1A, 1B, and 1C are driven at a constant current density of 50 mA/ cm2 .
  • the vertical axis of the graph shown in FIG. 26 shows normalized luminance (%) when the initial luminance is 100%, and the horizontal axis shows time (h).
  • the light-emitting device 1A an increase in luminance occurred at the beginning of the measurement, and then the luminance decreased over time.
  • the light-emitting devices 1B and 1C no initial increase in luminance occurred.
  • the light-emitting device 1C exhibited a gradual decrease in luminance, and good reliability was obtained.
  • FIG. 27 shows the change in voltage with respect to drive time when the light-emitting devices 1A, 1B, and 1C are driven at a constant current density of 50 mA/ cm2 .
  • the vertical axis of the graph shown in FIG. 27 shows the normalized voltage (V) when the initial voltage is set to 0, and the horizontal axis shows the time (h).
  • V normalized voltage
  • h time
  • the light-emitting devices 1A a voltage increase was observed after about 1 hour, and a rapid voltage increase was observed after 10 hours.
  • the light-emitting devices 1B and 1C show a gradual change in voltage and have good reliability. In particular, the light-emitting device 1C has better reliability than the light-emitting device 1B.
  • good device characteristics were obtained from the light emitting device 1B and the light emitting device 1C having a stacked structure of the first electron injection buffer layer 931a and the second electron injection buffer layer 931b.
  • the best device characteristics were obtained from the light emitting device 1C having a stacked structure of a mixed layer of mPPhen2P and 2',7'tBu-2,7hpp2SF (first electron injection buffer layer 931a) and a mixed layer of mPPhen2P and lithium oxide (Li 2 O) (second electron injection buffer layer 931b).
  • the electron spin resonance spectrum of a thin film made of the material used in the intermediate layer 930 of the light-emitting device 1C was measured.
  • the first electron injection buffer layer 931a in the intermediate layer of the light-emitting device 1C is a layer having a spin density of less than 1 ⁇ 10 16 spins/cm 3 .
  • the measurement of the electron spin resonance spectrum by the ESR method was performed using an electron spin resonance measuring device E500 type (manufactured by Bruker).
  • the second electron injection buffer layer 931b in the intermediate layer of the light emitting device 1C is a layer having a spin density of more than 1 ⁇ 10 17 spins/cm 3 .
  • the charge generation layer 933 is a layer containing PCBBiF, an organic compound having hole transport properties, and OCHD-003 exhibiting electron acceptor properties, and is a charge generation layer that separates charges when a voltage is applied.
  • PCBBiF:OCHD-003 When the electron spin resonance spectrum of a thin film obtained by co-evaporating PCBBiF and OCHD-003 on a quartz substrate at a weight ratio of 1:0.1 (PCBBiF:OCHD-003) to a thickness of 100 nm was measured at room temperature, a signal was observed at a g value of around 2.00, and it was found that the spin density was 5 ⁇ 10 19 spins/cm 3.
  • the measurement of the electron spin resonance spectrum by the ESR method was performed using an electron spin resonance measurement device FES FA300 type (manufactured by JEOL Ltd.). The above measurements were performed at a resonant frequency of 9.18 GHz, an output of 1 mW, a modulation magnetic field of 50 mT, a modulation width of 0.5 mT, a time constant of 0.03 s, a sweep time of 1 min, and at room temperature.
  • FES FA300 type manufactured by JEOL Ltd.
  • a light-emitting device 2 according to one embodiment of the present invention (light-emitting device 2A and comparative light-emitting device 2B) was fabricated, and the evaluation results of the fabricated light-emitting device 2 are described.
  • the light-emitting device 2A and the comparative light-emitting device 2B have a tandem structure in which a first EL layer 910, an intermediate layer 930, a second EL layer 920, and a second electrode 902 are stacked on a first electrode 901 formed on a substrate 900, which is a glass substrate.
  • the first EL layer 910 has a structure in which a hole injection layer 911, a first hole transport layer 912, and a first light emitting layer 913 are sequentially stacked.
  • the intermediate layer 930 has an electron injection buffer layer 931, an electron relay layer 932, and a charge generating layer 933.
  • the electron injection buffer layer 931 has a structure in which a second electron injection buffer layer 931b is stacked on a first electron injection buffer layer 931a.
  • the second EL layer 920 has a structure in which a second hole transport layer 922, a second light emitting layer 923, a second electron transport layer 924, and an electron injection layer 925 are sequentially stacked.
  • first EL layer 910 corresponds to the first light-emitting unit 501 shown in FIG. 1A
  • second EL layer 920 corresponds to the second light-emitting unit 502 shown in FIG. 1A
  • intermediate layer 930 corresponds to the intermediate layer 116 shown in FIG. 1A.
  • the light-emitting device 2A and the comparative light-emitting device 2B have different structures of the electron injection buffer layer 931.
  • the structural formula of the organic compound used in light-emitting device 2 is shown below.
  • a first electrode 901 consisting of a stack of a layer containing an alloy (also referred to as "APC") containing silver (Ag), palladium (Pd), and copper (Cu) and a layer containing indium tin oxide (also referred to as "ITSO") containing silicon oxide was formed on a substrate 900, which was a glass substrate.
  • an APC layer having a thickness of 100 nm was formed on the substrate 900 by a sputtering method, and then an ITSO layer having a thickness of 50 nm was formed by a sputtering method.
  • the area of the first electrode 901 was set to 4 mm 2 (2 mm ⁇ 2 mm).
  • ITSO functions as an anode.
  • APC functions as a reflective electrode (electrode with high reflectivity for visible light)
  • ITSO functions as a transparent electrode (electrode with high transmittance for visible light).
  • the first electrode 901 which is composed of a laminate of APC and ITSO, essentially functions as a reflective electrode.
  • the first EL layer 910 was formed on the first electrode 901.
  • the surface of the substrate 900 on which the first electrode 901 was formed was washed with water, and then heat-treated at 200° C. for 1 hour. Thereafter, the substrate 900 was introduced into a vacuum deposition apparatus, and vacuum-baked at 170° C. for 30 minutes under reduced pressure of about 1 ⁇ 10 ⁇ 4 Pa in a heating chamber in the vacuum deposition apparatus. Then, the substrate was naturally cooled under reduced pressure for about 30 minutes.
  • the substrate 900 was fixed to a substrate holder provided in a vacuum deposition apparatus so that the surface on which the first electrode 901 was formed was facing downward.
  • PCBBiF N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine
  • OCHD-003 an electron acceptor material
  • PCBBiF was evaporated onto the hole injection layer 911 to a thickness of 125 nm to form a first hole transport layer 912.
  • a first light-emitting layer 913 was formed on the first hole-transporting layer 912.
  • 8-(1,1′:4′,1′′-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine abbreviation: 8mpTP-4mDBtPBfpm
  • 9-(2-naphthyl)-9′-phenyl-9H,9′H-3,3′-bicarbazole abbreviation: ⁇ NCCP
  • [2-d3-methyl-8-(2-pyridinyl- ⁇ N)benzofuro[2,3-b]pyridine- ⁇ C]bis[2-(5-d3-methyl-2-pyridinyl- ⁇ N2)phenyl- ⁇ C]iridium(III) abbreviation: Ir(5mppy-d3) 2
  • a first light-emitting layer 913 was formed by co-evaporating 8mpTP-4
  • a first electron injection buffer layer 931a was provided on the first light-emitting layer 913.
  • the first electron injection buffer layer 931a was not formed.
  • a mixed layer of mPPhen2P and lithium oxide (Li 2 O) was formed as the second electron injection buffer layer 931b in both the light-emitting device 2A and the comparative light-emitting device 2B.
  • a copper phthalocyanine (abbreviation: CuPc) film was formed to a thickness of 2 nm as the electron relay layer 932.
  • PCBBiF and OCHD-003 were co-deposited by a vapor deposition method using resistance heating so that PCBBiF:OCHD-003 was 1:0.15 (weight ratio) and the film thickness was 10 nm, forming the charge generation layer 933.
  • PCBBiF was evaporated onto the charge generation layer 933 to a thickness of 65 nm to form a second hole transport layer 922.
  • a second light-emitting layer 923 was formed on the second hole-transporting layer 922.
  • 2mPCCzPDBq was deposited on the second light-emitting layer 923 to a thickness of 20 nm, and then mPPhen2P was deposited on the second light-emitting layer 923 to a thickness of 20 nm to form a second electron transport layer 924.
  • the second electrode 902 functions as a cathode.
  • the second electrode 902 is a semi-transparent and semi-reflective electrode that has the function of reflecting light and the function of transmitting light.
  • DBT3P-II 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene)
  • FIG. 29 shows the measurement results of the luminance-current density characteristics.
  • FIG. 30 shows the measurement results of the luminance-voltage characteristics.
  • FIG. 31 shows the measurement results of the current efficiency-current density characteristics.
  • FIG. 32 shows the measurement results of the current density-voltage characteristics.
  • FIG. 33 shows the measurement results of the EL intensity-wavelength characteristics.
  • Table 4 shows the main characteristics at a current density of 50 mA/ cm2 .
  • the luminance, CIE chromaticity, and electroluminescence spectrum were measured at room temperature using a spectroradiometer (SR-UL1R, manufactured by Topcon Corporation).
  • the light-emitting device 2A has a smaller decrease in luminance over driving time than the comparative light-emitting device 2B, and is a light-emitting device with better reliability than the comparative light-emitting device 2B.
  • 101 first electrode, 102: second electrode, 103: organic compound layer, 104: common layer, 110: subpixel, 111: hole injection layer, 112: hole transport layer, 113: light emitting layer, 114: electron transport layer, 115: electron injection layer, 116: intermediate layer, 117: charge generation layer, 118: electron relay layer, 119: electron injection buffer layer, 120: substrate, 122: resin layer, 125: inorganic insulating layer, 127: insulating layer, 128: layer

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WO2026069078A1 (ja) * 2024-09-25 2026-04-02 株式会社半導体エネルギー研究所 タンデム型発光デバイスの作製方法および表示装置

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