WO2024117272A1 - Élément électroluminescent à semi-conducteur et dispositif d'affichage - Google Patents

Élément électroluminescent à semi-conducteur et dispositif d'affichage Download PDF

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Publication number
WO2024117272A1
WO2024117272A1 PCT/KR2022/018912 KR2022018912W WO2024117272A1 WO 2024117272 A1 WO2024117272 A1 WO 2024117272A1 KR 2022018912 W KR2022018912 W KR 2022018912W WO 2024117272 A1 WO2024117272 A1 WO 2024117272A1
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Prior art keywords
light emitting
emitting device
semiconductor light
layer
uniform
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PCT/KR2022/018912
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English (en)
Korean (ko)
Inventor
정진혁
조병권
양영성
최원석
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엘지전자 주식회사
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Priority to PCT/KR2022/018912 priority Critical patent/WO2024117272A1/fr
Publication of WO2024117272A1 publication Critical patent/WO2024117272A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • LCDs liquid crystal displays
  • OLED displays OLED displays
  • Micro-LED displays Micro-LED displays
  • a micro-LED display is a display that uses micro-LED, a semiconductor light emitting device with a diameter or cross-sectional area of 100 ⁇ m or less, as a display element.
  • micro-LED displays use micro-LED, a semiconductor light-emitting device, as a display device, they have excellent performance in many characteristics such as contrast ratio, response speed, color gamut, viewing angle, brightness, resolution, lifespan, luminous efficiency, and luminance.
  • the micro-LED display has the advantage of being able to freely adjust the size and resolution and implement a flexible display because the screen can be separated and combined in a modular manner.
  • micro-LED displays require more than millions of micro-LEDs, there is a technical problem that makes it difficult to quickly and accurately transfer micro-LEDs to the display panel.
  • Transfer technologies that have been recently developed include the pick and place process, laser lift-off method, or self-assembly method.
  • the self-assembly method is a method in which the semiconductor light-emitting device finds its assembly position within the fluid on its own, and is an advantageous method for implementing a large-screen display device.
  • the size (or diameter) of the micro-LED is very small, and the area where the electrode provided on the lower side contacts the semiconductor layer is very small. That is, the contact area between the semiconductor layer and the electrode is very small, which leads to an increase in sheet resistance, which causes a problem in that the electrical characteristics deteriorate.
  • the lower surface of the semiconductor layer of the micro-LED has a straight plane and the electrode is provided on the straight plane, light traveling downward toward the electrode is absorbed by the electrode, causing a problem that luminous efficiency is reduced.
  • the semiconductor light emitting device that is moving on the backplane substrate 300A is assembled at a specific site on the backplane substrate 300A using DEP force.
  • the DEP force In order to better assemble semiconductor light emitting devices, the DEP force must be large. In particular, in the case of ultra-small LEDs such as micro-LEDs, the DEP force must be larger to improve the assembly rate of micro-LEDs, but there is a problem of increased power consumption.
  • the micro-LED is assembled on the backplane substrate 300A, and the micro-LED is fixed by DEP force while the electrical connection is formed by a post-process.
  • the micro-LED is fixed by DEP force while the electrical connection is formed by a post-process.
  • the micro-LED when the micro-LED is circular, even if it is assembled on the backplane substrate 300A, it is not fixed and is rotated from time to time. Therefore, there is a problem in that the micro-LED is not fixed in the correct position, resulting in electrical connection defects due to misalignment, etc., resulting in lighting defects.
  • the embodiments aim to solve the above-described problems and other problems.
  • Another object of the embodiment is to provide a semiconductor light emitting device whose electrical characteristics can be improved.
  • Another purpose of the embodiment is to provide a semiconductor light emitting device that can improve luminous efficiency.
  • another purpose of the embodiment is to provide a semiconductor light emitting device that can improve assembly rate and reduce power consumption for self-assembly.
  • another purpose according to the embodiment is to provide a display device that can enhance the fixation of the semiconductor light emitting device.
  • another object according to the embodiment is to provide a display device including a semiconductor light emitting device that can be assembled in place.
  • a semiconductor light emitting device includes: a light emitting layer; A passivation layer surrounding the light emitting layer; a first non-uniform area below the light emitting layer; a first electrode including a second non-uniform area below the first non-uniform area; and a second electrode on the light emitting layer, wherein the first non-uniform area includes a plurality of first engraved patterns and a plurality of first protrusions on each of the plurality of first engraved patterns, and the second non-uniform region includes The region includes a plurality of second engraved patterns and a plurality of second protrusions on each of the plurality of second engraved patterns, and each of the plurality of second engraved patterns has a shape corresponding to the shape of the plurality of first engraved patterns. , the plurality of second protrusions each have a shape corresponding to the shape of the plurality of first protrusions.
  • the first engraved pattern and the second engraved pattern may have a ring shape around the first protrusion and the second protrusion, respectively.
  • the light emitting layer includes: a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, wherein the first conductive semiconductor layer may have a thickness of 70% or more of the total thickness of the light emitting layer.
  • the height of the first protrusion may be 20% to 70% of the thickness of the first conductivity type semiconductor layer.
  • the first electrode includes a plurality of metal layers including at least an ohmic contact layer and a magnetic layer, and each of the plurality of metal layers may have a thickness of 50 nm or less.
  • the semiconductor light emitting device may include a first uniform region below the light emitting layer, and the first electrode may include a second uniform region having a shape corresponding to the shape of the first uniform region.
  • the second non-uniform area includes a 2-1 non-uniform area below the first light-emitting area of the light-emitting layer; and a 2-2 non-uniform area below the second light-emitting area of the light-emitting layer, wherein the second uniform area may be located between the 2-1 non-uniform area and the 2-2 non-uniform area. there is.
  • the second uniform area includes a 2-1 uniform area below the first light-emitting area of the light-emitting layer; and a 2-2 uniform area below the second light-emitting area of the light-emitting layer, wherein the second non-uniform area may be located between the 2-1 uniform area and the 2-2 uniform area.
  • the first uniform area and the first non-uniform area may be part of the first conductivity type semiconductor layer.
  • the first uniform area may have a first recess formed on a lower surface of the first conductive semiconductor layer, and the second uniform area may have a second recess corresponding to the first recess.
  • the surface of the first uniform area may be located on the same horizontal line as the bottom of the first engraved pattern.
  • the display device includes: a backplane substrate; the semiconductor light emitting device on the backplay substrate; a fixing member between the backplane substrate and the semiconductor light emitting device; a connection electrode on a side of the semiconductor light emitting device; and an electrode wiring on an upper side of the semiconductor light emitting device, wherein the connection electrode may be connected to at least one of a first assembly wiring and a second assembly wiring of the backplane substrate.
  • the fixing member may be disposed in the second recess.
  • the fixing member may be disposed on the plurality of second engraved patterns of the first electrode.
  • a second non-uniform region 156 may be included in the first electrode 154 provided below the semiconductor light emitting devices 150A, 150B, and 150C.
  • the second non-uniform area 156 may include a plurality of second engraved patterns 156a and a plurality of second protrusions 156b. At this time, the plurality of second protrusions 156b may each be disposed in the plurality of second engraved patterns 156a.
  • the first electrode 154 since the first electrode 154 includes a second non-uniform area 156 including a plurality of second engraved patterns 156a and a plurality of second protrusions 156b, the first electrode 154 ) and the light emitting layer 150a are significantly increased, thereby improving electrical properties.
  • the area of the magnetic layer included in the first electrode 154 increases, thereby improving the assembly rate and increasing the DEP force for self-assembly, enabling low voltage application and reducing power consumption.
  • the first electrode 154 since the first electrode 154 includes a second non-uniform region 156 including a plurality of second engraved patterns 156a and a plurality of second protrusions 156b, the light emitting layer 150a As the generated light is diffusely reflected by the second non-uniform area 156 including a plurality of second engraved patterns 156a and a plurality of second protrusions 156b, luminous efficiency may be improved.
  • the semiconductor light-emitting devices 150B and 150C are more firmly fixed to the first insulating layer 330 by the fixing member 390, thereby further improving the fixation of the semiconductor light-emitting devices 150B and 150C. It can be strengthened.
  • each of the 2-1 non-uniform area 156-1 and the 2-2 non-uniform area 156-2 located on both sides of the second uniform area 156' is a first assembly wiring 321.
  • the semiconductor light emitting device 150B can be assembled in the correct position.
  • each of the 2-1 non-uniform area 156-1 and the 2-2 non-uniform area 156-2 located on both sides of the second uniform area 156' includes the first assembly wiring 321 and Alignment to the second assembly wiring 322 may be aligned to the correct position of the semiconductor light emitting device 150B.
  • the semiconductor light emitting device 150B is not assembled in the correct position in the assembly hole 340H, there is no need to perform a separate alignment process to assemble it in the correct position, and problems caused by not being aligned in the correct position are avoided. That is, electrical connection defects due to misalignment can be prevented.
  • Figure 1 shows a living room of a house where a display device according to an embodiment is placed.
  • Figure 2 is a block diagram schematically showing a display device according to an embodiment.
  • FIG. 3 is a circuit diagram showing an example of the pixel of FIG. 2.
  • FIG. 4 is an enlarged view of the first panel area in the display device of FIG. 1.
  • Figure 5 is an enlarged view of area A2 in Figure 4.
  • Figure 6 is a diagram showing an example in which a light emitting device according to an embodiment is assembled on a substrate by a self-assembly method.
  • Figure 7 is a cross-sectional view showing a semiconductor light emitting device according to the first embodiment.
  • FIG. 8 is a bottom view of the semiconductor light emitting device according to the first embodiment when the first electrode 154 is removed.
  • 9 to 17 show a method of manufacturing a semiconductor light emitting device according to the first embodiment.
  • Figure 18 is a cross-sectional view showing a display device according to the first embodiment.
  • Figure 19 is a cross-sectional view showing a backplane substrate 300A according to an embodiment.
  • 20A to 25 show a method of manufacturing a display device according to the first embodiment.
  • Figure 26 is a cross-sectional view showing a semiconductor light emitting device according to the second embodiment.
  • FIG. 27 is a bottom view of the semiconductor light emitting device according to the second embodiment when the first electrode 154 is removed.
  • Figures 28 and 29 show self-alignment of a semiconductor light emitting device during self-assembly.
  • Figure 30 shows the DEP force reflecting the shape of the lower side of the semiconductor light emitting device during self-assembly.
  • 31 to 40 show a method of manufacturing a semiconductor light emitting device according to a second embodiment.
  • Figure 41 is a cross-sectional view showing a display device according to a second embodiment.
  • Figure 42 is a cross-sectional view showing a semiconductor light emitting device according to the third embodiment.
  • Figure 43 is a bottom view of the semiconductor light emitting device according to the third embodiment when the first electrode 154 is removed.
  • Figure 44 is a cross-sectional view showing a display device according to a third embodiment.
  • Display devices described in this specification include TVs, shines, mobile terminals such as mobile phones and smart phones, displays for computers such as laptops and desktops, head-up displays (HUDs) for automobiles, backlight units for displays, Displays and light sources for XR (Extend Reality) such as AR, VR, and MR (mixed reality) may be included.
  • HUDs head-up displays
  • XR Extend Reality
  • AR VR
  • MR mixed reality
  • Figure 1 shows a living room of a house where a display device according to an embodiment is installed.
  • the display device 100 of the embodiment can display the status of various electronic products such as a washing machine 101, a robot vacuum cleaner 102, and an air purifier 103, and displays the status of each electronic product and IOT-based You can communicate with each other and control each electronic product based on the user's setting data.
  • various electronic products such as a washing machine 101, a robot vacuum cleaner 102, and an air purifier 103.
  • the display device 100 may include a flexible display manufactured on a thin and flexible substrate.
  • Flexible displays can bend or curl like paper while maintaining the characteristics of existing flat displays.
  • a unit pixel refers to the minimum unit for implementing one color.
  • a unit pixel of a flexible display may be implemented by a light-emitting device.
  • the light emitting device may be Micro-LED or Nano-LED, but is not limited thereto.
  • FIG. 2 is a block diagram schematically showing a display device according to an embodiment
  • FIG. 3 is a circuit diagram showing an example of the pixel of FIG. 2.
  • a display device may include a display panel 10, a driving circuit 20, a scan driver 30, and a power supply circuit 50.
  • the display device 100 of the embodiment may drive the light emitting device in an active matrix (AM) method or a passive matrix (PM) method.
  • AM active matrix
  • PM passive matrix
  • the driving circuit 20 may include a data driver 21 and a timing control unit 22.
  • the display panel 10 may be rectangular, but is not limited thereto. That is, the display panel 10 may be formed in a circular or oval shape. At least one side of the display panel 10 may be bent to a predetermined curvature.
  • the display panel may include a display area (DA).
  • the display area DA is an area where pixels PX are formed to display an image.
  • the display panel may include a non-display area (NDA).
  • the non-display area (DNA) may be an area excluding the display area (DA).
  • the display area DA and the non-display area NDA may be defined on the same surface.
  • the non-display area (DNA) may surround the display area (DA) on the same side as the display area (DA), but this is not limited.
  • the display area DA and the non-display area NDA may be defined on different planes.
  • the display area DA may be defined on the top surface of the substrate
  • the non-display area NDA may be defined on the bottom surface of the substrate.
  • the non-display area NDA may be defined on the entire or partial area of the bottom surface of the substrate.
  • DA display area
  • NDA non-display area
  • DA display area
  • NDA non-display area
  • the display panel 10 includes data lines (D1 to Dm, m is an integer greater than 2), scan lines (S1 to Sn, n is an integer greater than 2) that intersect the data lines (D1 to Dm), and a high potential voltage.
  • VDDL high-potential voltage line
  • VSSL low-potential voltage line
  • S1 to Sn scan lines
  • PX pixels
  • Each of the pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3.
  • the first sub-pixel (PX1) emits a first color light of a first main wavelength
  • the second sub-pixel (PX2) emits a second color light of a second main wavelength
  • the third sub-pixel (PX3) A third color light of a third main wavelength may be emitted.
  • the first color light may be red light
  • the second color light may be green light
  • the third color light may be blue light, but are not limited thereto.
  • FIG. 2 it is illustrated that each of the pixels PX includes three sub-pixels, but the present invention is not limited thereto. That is, each pixel PX may include four or more sub-pixels.
  • Each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) includes at least one of the data lines (D1 to Dm), at least one of the scan lines (S1 to Sn), and It can be connected to the above voltage line (VDDL).
  • the first sub-pixel PX1 may include light-emitting devices LD, a plurality of transistors for supplying current to the light-emitting devices LD, and at least one capacitor Cst.
  • each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) may include only one light emitting element (LD) and at least one capacitor (Cst). It may be possible.
  • Each of the light emitting elements LD may be a semiconductor light emitting diode including a first electrode 154, a plurality of conductive semiconductor layers, and a second electrode 155.
  • the first electrode 154 may be an anode electrode
  • the second electrode 155 may be a cathode electrode, but this is not limited.
  • the light emitting device may be one of a horizontal light emitting device, a flip chip type light emitting device, and a vertical light emitting device.
  • the plurality of transistors may include a driving transistor (DT) that supplies current to the light emitting elements (LD) and a scan transistor (ST) that supplies a data voltage to the gate electrode of the driving transistor (DT).
  • the driving transistor DT has a gate electrode connected to the source electrode of the scan transistor ST, a source electrode connected to the high potential voltage line VDDL to which the high potential voltage VDD is applied, and the first electrode of the light emitting elements LD. It may include a drain electrode connected to the electrodes 154.
  • the scan transistor (ST) has a gate electrode connected to the scan line (Sk, k is an integer satisfying 1 ⁇ k ⁇ n), a source electrode connected to the gate electrode of the driving transistor (DT), and a data line (Dj, j). It may include a drain electrode connected to an integer satisfying 1 ⁇ j ⁇ m.
  • the capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT.
  • the storage capacitor (Cst) charges the difference between the gate voltage and source voltage of the driving transistor (DT).
  • the driving transistor (DT) and the scan transistor (ST) may be formed of a thin film transistor.
  • the driving transistor (DT) and the scan transistor (ST) are mainly described as being formed of a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but the present invention is not limited thereto.
  • the driving transistor (DT) and scan transistor (ST) may be formed of an N-type MOSFET. In this case, the positions of the source and drain electrodes of the driving transistor (DT) and the scan transistor (ST) may be changed.
  • each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) includes one driving transistor (DT), one scan transistor (ST), and one capacitor ( Although it is exemplified to include 2T1C (2 Transistor - 1 capacitor) with Cst), the present invention is not limited thereto.
  • Each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) may include a plurality of scan transistors (ST) and a plurality of capacitors (Cst).
  • the second sub-pixel (PX2) and the third sub-pixel (PX3) can be represented by substantially the same circuit diagram as the first sub-pixel (PX1), detailed descriptions thereof will be omitted.
  • the driving circuit 20 outputs signals and voltages for driving the display panel 10.
  • the driving circuit 20 may include a data driver 21 and a timing control unit 22.
  • the data driver 21 receives digital video data (DATA) and source control signal (DCS) from the timing control unit 22.
  • the data driver 21 converts digital video data (DATA) into analog data voltages according to the source control signal (DCS) and supplies them to the data lines (D1 to Dm) of the display panel 10.
  • the timing control unit 22 receives digital video data (DATA) and timing signals from the host system.
  • the host system may be an application processor in a smartphone or tablet PC, a monitor, or a system-on-chip in a TV.
  • the timing control unit 22 generates control signals to control the operation timing of the data driver 21 and the scan driver 30.
  • the control signals may include a source control signal (DCS) for controlling the operation timing of the data driver 21 and a scan control signal (SCS) for controlling the operation timing of the scan driver 30.
  • DCS source control signal
  • SCS scan control signal
  • the driving circuit 20 may be disposed in the non-display area (NDA) provided on one side of the display panel 10.
  • the driving circuit 20 may be formed as an integrated circuit (IC) and mounted on the display panel 10 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method.
  • COG chip on glass
  • COP chip on plastic
  • ultrasonic bonding method The present invention is not limited to this.
  • the driving circuit 20 may be mounted on a circuit board (not shown) rather than on the display panel 10.
  • the data driver 21 may be mounted on the display panel 10 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method, and the timing control unit 22 may be mounted on a circuit board. there is.
  • COG chip on glass
  • COP chip on plastic
  • the scan driver 30 receives a scan control signal (SCS) from the timing controller 22.
  • the scan driver 30 generates scan signals according to the scan control signal SCS and supplies them to the scan lines S1 to Sn of the display panel 10.
  • the scan driver 30 may include a plurality of transistors and may be formed in the non-display area NDA of the display panel 10.
  • the scan driver 30 may be formed as an integrated circuit, and in this case, it may be mounted on a gate flexible film attached to the other side of the display panel 10.
  • the power supply circuit 50 may generate voltages necessary for driving the display panel 10 from the main power supplied from the system board and supply them to the display panel 10.
  • the power supply circuit 50 generates a high potential voltage (VDD) and a low potential voltage (VSS) for driving the light emitting elements (LD) of the display panel 10 from the main power supply to It can be supplied to the high potential voltage line (VDDL) and low potential voltage line (VSSL).
  • the power supply circuit 50 may generate and supply driving voltages for driving the driving circuit 20 and the scan driver 30 from the main power source.
  • FIG. 4 is an enlarged view of the first panel area in the display device of FIG. 3.
  • the display device 100 of the embodiment may be manufactured by mechanically and electrically connecting a plurality of panel areas, such as the first panel area A1, by tiling.
  • the first panel area A1 may include a plurality of semiconductor light emitting devices 150 arranged for each unit pixel (PX in FIG. 2).
  • Figure 5 is an enlarged view of area A2 in Figure 4.
  • the display device 100 of the embodiment may include a substrate 200, assembly wiring 201 and 202, an insulating layer 206, and a plurality of semiconductor light emitting devices 150. More components may be included than this.
  • the assembly wiring may include a first assembly wiring 201 and a second assembly wiring 202 that are spaced apart from each other.
  • the first assembly wiring 201 and the second assembly wiring 202 may be provided to generate dielectrophoresis force (DEP force) to assemble the semiconductor light emitting device 150.
  • the semiconductor light emitting device 150 may be one of a horizontal semiconductor light emitting device, a flip chip type semiconductor light emitting device, and a vertical semiconductor light emitting device.
  • the semiconductor light-emitting device 150 may include, but is not limited to, a red semiconductor light-emitting device 150, a green semiconductor light-emitting device 150G, and a blue semiconductor light-emitting device 150B0 to form a unit pixel. Red phosphor and green Red and green colors can also be implemented by using phosphors, etc.
  • the substrate 200 may be a support member that supports components disposed on the substrate 200 or a protection member that protects the components.
  • the substrate 200 may be a rigid substrate or a flexible substrate.
  • the substrate 200 may be made of sapphire, glass, silicon, or polyimide. Additionally, the substrate 200 may include a flexible material such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate). Additionally, the substrate 200 may be made of a transparent material, but is not limited thereto.
  • the substrate 200 may function as a support substrate in a display panel, and may also function as an assembly substrate when self-assembling a light emitting device.
  • the substrate 200 may be a backplane equipped with circuits in the sub-pixels (PX1, PX2, PX3) shown in FIGS. 2 and 3, such as transistors (ST, DT), capacitors (Cst), signal wires, etc.
  • PX1, PX2, PX3 sub-pixels shown in FIGS. 2 and 3, such as transistors (ST, DT), capacitors (Cst), signal wires, etc.
  • ST, DT transistors
  • Cst capacitors
  • signal wires etc.
  • the insulating layer 206 may include an insulating and flexible organic material such as polyimide, PAC, PEN, PET, polymer, etc., or an inorganic material such as silicon oxide (SiO2) or silicon nitride series (SiNx), and may include a substrate. (200) may be integrated to form one substrate.
  • the insulating layer 206 may be a conductive adhesive layer that has adhesiveness and conductivity, and the conductive adhesive layer may be flexible and enable a flexible function of the display device.
  • the insulating layer 206 may be an anisotropic conductive film (ACF) or a conductive adhesive layer such as an anisotropic conductive medium or a solution containing conductive particles.
  • the conductive adhesive layer may be a layer that is electrically conductive in a direction perpendicular to the thickness, but electrically insulating in a direction horizontal to the thickness.
  • the insulating layer 206 may include an assembly hole 203 into which the semiconductor light emitting device 150 is inserted. Therefore, during self-assembly, the semiconductor light emitting device 150 can be easily inserted into the assembly hole 203 of the insulating layer 206.
  • the assembly hole 203 may be called an insertion hole, a fixing hole, an alignment hole, etc.
  • the assembly hall 203 may also be called a hall.
  • the assembly hole 203 may be called a hole, groove, groove, recess, pocket, etc.
  • the assembly hole 203 may be different depending on the shape of the semiconductor light emitting device 150.
  • the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device each have different shapes, and may have an assembly hole 203 having a shape corresponding to the shape of each of these semiconductor light emitting devices.
  • the assembly hole 203 may include a first assembly hole for assembling a red semiconductor light emitting device, a second assembly hole for assembling a green semiconductor light emitting device, and a third assembly hole for assembling a blue semiconductor light emitting device. there is.
  • the red semiconductor light emitting device has a circular shape
  • the green semiconductor light emitting device has a first oval shape with a first minor axis and a second major axis
  • the blue semiconductor light emitting device has a second oval shape with a second minor axis and a second major axis.
  • the second major axis of the oval shape of the blue semiconductor light emitting device may be greater than the second major axis of the oval shape of the green semiconductor light emitting device
  • the second minor axis of the oval shape of the blue semiconductor light emitting device may be smaller than the first minor axis of the oval shape of the green semiconductor light emitting device.
  • methods for mounting the semiconductor light emitting device 150 on the substrate 200 may include, for example, a self-assembly method (FIG. 6) and a transfer method.
  • Figure 6 is a diagram showing an example in which a light emitting device according to an embodiment is assembled on a substrate by a self-assembly method.
  • the assembled substrate 200 which will be described later, can also function as the panel substrate 200a in a display device after assembly of the light emitting device, but the embodiment is not limited thereto.
  • the semiconductor light-emitting device 150 may be introduced into the chamber 1300 filled with fluid 1200, and the semiconductor light-emitting device 150 may be placed on the assembly substrate ( 200). At this time, the light emitting device 150 adjacent to the assembly hole 207H of the assembly substrate 200 may be assembled into the assembly hole 207H by DEP force caused by the electric field of the assembly wiring.
  • the fluid 1200 may be water such as ultrapure water, but is not limited thereto.
  • the chamber may be called a water tank, container, vessel, etc.
  • the assembled substrate 200 may be placed on the chamber 1300. Depending on the embodiment, the assembled substrate 200 may be input into the chamber 1300.
  • an electric field is formed in the first assembly wiring 201 and the second assembly wiring 202 as an alternating voltage is applied, and the semiconductor light emitting device 150 is inserted into the assembly hole 207H by the DEP force caused by this electric field.
  • the gap between the first assembly wiring 201 and the second assembly wiring 202 may be smaller than the width of the semiconductor light emitting device 150 and the width of the assembly hole 207H, and the assembly of the semiconductor light emitting device 150 using an electric field. The position can be fixed more precisely.
  • An insulating layer 215 is formed on the first assembled wiring 201 and the second assembled wiring 202 to protect the first assembled wiring 201 and the second assembled wiring 202 from the fluid 1200, and Leakage of current flowing through the first assembly wiring 201 and the second assembly wiring 202 can be prevented.
  • the insulating layer 215 may be formed of a single layer or multiple layers of an inorganic insulator such as silica or alumina or an organic insulator.
  • the insulating layer 215 may have a minimum thickness to prevent damage to the first assembly wiring 201 and the second assembly wiring 202 when assembling the semiconductor light emitting device 150. can have a maximum thickness for stable assembly.
  • a partition wall 207 may be formed on the insulating layer 215. Some areas of the partition wall 207 may be located on top of the first assembly wiring 201 and the second assembly wiring 202, and the remaining area may be located on the top of the assembly substrate 200.
  • assembly holes ( 207H) may be formed.
  • An assembly hole 207H where the semiconductor light emitting devices 150 are coupled is formed in the assembly substrate 200, and the surface where the assembly hole 207H is formed may be in contact with the fluid 1200.
  • the assembly hole 207H can guide the exact assembly position of the semiconductor light emitting device 150.
  • the assembly hole 207H may have a shape and size corresponding to the shape of the semiconductor light emitting device 150 to be assembled at the corresponding location. Accordingly, it is possible to prevent another semiconductor light emitting device from being assembled or a plurality of semiconductor light emitting devices from being assembled into the assembly hole 207H.
  • Assembly device 1100 may be a permanent magnet or an electromagnet.
  • the assembly device 1100 may move while in contact with the assembly substrate 200 in order to maximize the area to which the magnetic field is applied within the fluid 1200.
  • the assembly device 1100 may include a plurality of magnetic materials or may include a magnetic material of a size corresponding to that of the assembly substrate 200. In this case, the moving distance of the assembly device 1100 may be limited to within a predetermined range.
  • the semiconductor light emitting device 150 in the chamber 1300 may move toward the assembly device 1100 and the assembly substrate 200 by the magnetic field generated by the assembly device 1100.
  • the semiconductor light emitting device 150 may enter the assembly hole 207H and be fixed by the DEP force formed by the electric field between the assembly wires 201 and 202 while moving toward the assembly device 1100.
  • the first and second assembly wirings 201 and 202 generate an electric field using an AC power source, and a DEP force may be formed between the assembly wirings 201 and 202 due to this electric field.
  • the semiconductor light emitting device 150 can be fixed to the assembly hole 207H on the assembly substrate 200 by this DEP force.
  • a predetermined solder layer (not shown) is formed between the light emitting device 150 assembled on the assembly hole 207H of the assembly substrate 200 and the assembly wiring 201 and 202 to improve the bonding force of the light emitting device 150. It can be improved.
  • a molding layer (not shown) may be formed in the assembly hole 207H of the assembly substrate 200.
  • the molding layer may be a transparent resin or a resin containing a reflective material or a scattering material.
  • the time required to assemble each semiconductor light-emitting device on a substrate can be drastically shortened, making it possible to implement a large-area, high-pixel display more quickly and economically.
  • FIGS. 7 to 44 Descriptions omitted below can be easily understood from FIGS. 1 to 6 and the description given above in relation to the corresponding drawings.
  • Figure 7 is a cross-sectional view showing a semiconductor light emitting device according to the first embodiment.
  • FIG. 8 is a bottom view of the semiconductor light emitting device according to the first embodiment when the first electrode 154 is removed.
  • the semiconductor light emitting device 150A may include a light emitting layer 150a, a passivation layer 157, a first electrode 154, and a second electrode 155. there is.
  • the semiconductor light emitting device 150A according to the first embodiment may be a semiconductor light emitting device (150R, 150G, and 150B in FIG. 4) that emits light of different colors.
  • the semiconductor light emitting device 150A according to the first embodiment may be a vertical semiconductor light emitting device in which current flows vertically within the light emitting layer 150a, but is not limited thereto.
  • the light emitting layer 150a includes a plurality of semiconductor layers and can generate light of a specific color.
  • the light emitting layer 150a may include at least one first conductivity type semiconductor layer 151, an active layer 152, and at least one second conductivity type semiconductor layer 153.
  • the active layer 152 may be located between the first conductive semiconductor layer 151 and the second conductive semiconductor layer 153.
  • the first conductive semiconductor layer 151 may include an n-type dopant
  • the second conductive semiconductor layer 153 may include a p-type dopant, but this is not limited.
  • the passivation layer 157 may surround the light emitting layer 150a.
  • the passivation layer 157 may surround the sides of the light emitting layer 150a and be disposed on the upper side.
  • the passivation layer 157 may not be disposed on the upper side of the light-emitting layer 150a, so the upper side of the light-emitting layer 150a may be exposed.
  • the first electrode 154 may be disposed on the lower side of the light-emitting layer 150a, and the second electrode 155 may be disposed on the upper side of the light-emitting layer 150a.
  • the first electrode 154 is a cathode
  • the second electrode 155 is an anode
  • light having luminance corresponding to the current may be generated.
  • the first electrode 154 may be formed of an opaque metal, and the second electrode 155 may be formed of a transparent conductive material.
  • the first electrode 154 may have a multilayer structure.
  • the first electrode 154 may include an ohmic contact layer, a magnetic layer, an electrode layer, a bonding layer, an anti-oxidation layer, etc.
  • the second electrode 155 may also have a multilayer structure of at least one or more layers in addition to a conductive layer made of a conductive material, but this is not limited.
  • the semiconductor light emitting device 150A may include a first non-uniform region 158.
  • the first non-uniform area 158 may be an area forming a non-uniform surface on the lower side of the light emitting layer 150a.
  • the lower side of the light emitting layer 150a may be processed to form the first non-uniform area 158.
  • the first non-uniform area 158 may include a plurality of first engraved patterns 158a and a plurality of first protrusions 158b.
  • the first protrusion 158b may be located in the first engraved pattern 158a.
  • the first engraved pattern 158a may refer to a pattern that is recessed into the interior from the lower side of the light emitting layer 150a.
  • the first engraved pattern 158a may be formed on the lower surface of the first conductivity type semiconductor layer 151 of the light emitting layer 150a. That is, by removing the lower surface of the first conductive semiconductor layer 151, the first engraved pattern 158a recessed from the lower surface of the first conductive semiconductor layer 151 into the first concave pattern 158a can be formed.
  • the plurality of first engraved patterns 158a may be spaced apart from each other or may be attached to each other. When the plurality of first engraved patterns 158a are spaced apart from each other, the area between the first engraved patterns 158a may be the lower surface of the first conductive semiconductor layer 151.
  • the first engraved pattern 158a may have a ring shape around the first protrusion 158b. That is, the first engraved pattern 158a having a ring shape may be formed by forming an engraved pattern along the circumference of the first protrusion 158b.
  • a first protrusion 158b may be formed within the first engraved pattern 158a formed in this way.
  • the first engraved pattern 158a may be formed along the perimeter of the first protrusion 158b.
  • the first area corresponding to the first protrusion 158b is not removed from the bottom of the first conductive semiconductor layer 151, but the second area corresponding to the periphery of the first area is removed, thereby removing the first area corresponding to the first protrusion 158b.
  • the region may be formed as a first protrusion 158b, and the removed second region may be formed as a first engraved pattern 158a.
  • the first protrusion 158b may have a first peak P1 at its lowest point.
  • the first peak P1 of the first protrusion 158b may be located on the same horizontal line as the lower surface of the first conductive semiconductor layer 151. Relatively much is removed near the lower surface of the first conductive semiconductor layer 151, and relatively less is removed as it goes into the lower surface of the first conductive semiconductor layer 151, thereby forming the first engraved pattern 158a. It has a maximum width (W1) at the bottom of the first conductive semiconductor layer 151, and the width may decrease toward the inside of the first conductive semiconductor layer 151.
  • the first protrusion 158b has a first peak (P1) on the lower surface of the first conductive semiconductor layer 151, and its diameter may increase as it goes inside the first conductive semiconductor layer 151.
  • P1 first peak
  • the maximum diameter D1 of the first protrusion 158b and/or the maximum width W1 of the first engraved pattern 158a may be 100 nm or less.
  • the first engraved pattern 158a and the first protrusion 158b may be formed simultaneously. That is, an etching process is performed on the lower surface of the first conductive semiconductor layer 151 to form a plurality of first engraved patterns 158a, so that the first conductive semiconductor layer is formed within the first engraved pattern 158a. It may remain without being removed and be formed into a first protrusion 158b.
  • the first electrode 154 may include a second non-uniform area 156.
  • the second non-uniform area 156 may be disposed below the first non-uniform area 158.
  • the shape of the second non-uniform area 156 may reflect the shape of the first non-uniform area 158. That is, the second non-uniform area 156 may have a shape corresponding to the shape of the first non-uniform area 158.
  • the second non-uniform area 156 includes a plurality of second engraved patterns 156a and It may include a plurality of second protrusions 156b.
  • the plurality of second engraved patterns 156a may each have a shape corresponding to the shape of the plurality of first engraved patterns 158a.
  • Each of the plurality of second protrusions 156b may have a shape corresponding to the shape of the plurality of first protrusions 158b.
  • the second engraved pattern 156a may have a concave shape toward the inside of the light emitting layer 150a.
  • the second protrusion 156b may be formed within the second engraved pattern 156a.
  • the second engraved pattern 156a may have a ring shape around the second protrusion 156b. That is, a second engraved pattern 156a having a ring shape may be formed around the second protrusion 156b.
  • the second protrusion 156b is disposed on the first protrusion 158b, it may have a second peak P2 having a shape corresponding to the shape of the first peak P1 of the first protrusion 158b.
  • the contact area can be increased. The larger the contact area, the smaller the sheet resistance, which can improve electrical characteristics.
  • the first non-uniform region 158 may be formed in the first conductivity type semiconductor layer 151 or the second conductivity type semiconductor layer 153 of the light emitting layer 150a.
  • the first conductive semiconductor layer 151 is a semiconductor layer containing an n-type dopant and may have a thickness t1 that is much larger than the thickness of the second conductive semiconductor layer 153.
  • the first conductive semiconductor layer 151 may have a thickness t1 of 70% or more of the total thickness of the light emitting layer 150a. Accordingly, the first engraved pattern 158a or the first protrusion 158b of the first non-uniform region 158 may be formed on the first conductivity type semiconductor layer 151.
  • the first electrode 154 has a very thin thickness t2 and the height H1 of the first protrusion 158b of the first non-uniform region 158 or the depth of the first engraved pattern 158a is very small. Because of the size, the second engraved pattern 156a and the second protrusion 156b may be formed to correspond to the first engraved pattern 158a and the second protrusion 156b of the first non-uniform area 158, respectively. .
  • the height H1 of the first protrusion 158b may be 20% to 70% of the thickness t1 of the first conductive semiconductor layer 151.
  • the thickness (t1) of the first conductive semiconductor layer 151 is very thick, 20% to 70% of the thickness (t1) of the first conductive semiconductor layer 151 is formed by the first protrusion ( In the case of the height H1 of 158b), the height H1 of the first protrusion 158b may also be very large. As the height H1 of the first protrusion 158b increases, the depth of the first engraved pattern 158a may also increase.
  • the thickness t2 of the first electrode 154 may be 30% or less of the height H1 of the first protrusion 158b. While the height H1 of the first protrusion 158b is very large, the thickness t2 of the first electrode 154 is very thin. Accordingly, when the second non-uniform area 156 of the first electrode 154 is formed on the first non-uniform area 158, the second engraved pattern 156a of the second non-uniform area 156 and The second protrusion 156b may be formed to correspond to the first engraved pattern 158a and the first protrusion 158b of the first non-uniform area 158, respectively.
  • the first electrode 154 may include a plurality of metal layers including an ohmic contact layer, a magnetic layer, etc.
  • the plurality of metal layers can each be formed very thinly, with a thickness of 50 nm or less.
  • the first non-uniform area 158 is disposed under the light emitting layer 150a, and the first electrode 154 includes a second non-uniform area 156 under the first non-uniform area 158. This can be placed.
  • the contact area between the first electrode 154 and the light emitting layer 150a may be expanded, thereby improving electrical characteristics. Additionally, the light generated in the light emitting layer 150a may be diffusely reflected by the first non-uniform region 158, thereby improving light emission efficiency. In addition, during self-assembly, the area of the magnetic layer included in the first electrode 154 increases, thereby improving the assembly rate and increasing the DEP force for self-assembly, enabling low voltage application and reducing power consumption.
  • 9 to 17 show a method of manufacturing a semiconductor light emitting device according to the first embodiment.
  • the light emitting layer 150a includes at least one first conductive semiconductor layer 151, an active layer 152 on the first conductive semiconductor layer 151, and at least one second conductive semiconductor layer on the active layer 152 ( 153) may be included.
  • the growth substrate 410 may be adhered onto the growth substrate. That is, the passivation layer 157 on the growth substrate 410 may be adhered to the regenerative layer of the temporary substrate 420.
  • the sacrificial layer is removed later and may be metal or organic. Thereafter, the growth substrate 410 may be removed through the LLO process.
  • particles 440 may be applied on the upper surface of the light emitting layer 150a exposed by removing the growth substrate 410.
  • the particles may be formed of metal or silicon-based materials, but are not limited thereto.
  • the particles 440 in the drawing have a spherical shape, they may have other shapes.
  • the particles 440 are shown in the drawing as being in contact with each other, the particles 440 may not be in contact with each other, or some particles 440 may be in contact with each other and other particles 440 may not be in contact with each other.
  • the size of the particles 440 may be several nanometers or less.
  • a fixed film 450a may be formed on the particles 440.
  • the fixed film 450a may include an inorganic material such as SiO2 or SiNx, but is not limited thereto.
  • the fixed film 450a may be formed between the particles 440, under the particles 440, and between the particles 440.
  • the particles 440 can be firmly fixed on the light emitting layer 150a by the fixing film 450a.
  • the drawing shows that the fixed film 450a is formed on the particles 440, the fixed film 450a is not formed on the particles 440, so the particles 440 may be exposed.
  • the fixed film 450a located on the particles 440 is removed, and the particles 440 are also removed, so that the fixed film 450a formed below the particles 440 is removed from the particles 440.
  • ) may be formed as a pattern mask 450 corresponding to the shape of.
  • the fixed film 450a may be removed through dry etching, and the particles 440 may be removed through wet etching, but this is not limited.
  • the pattern mask 450 may have a structure in which a pattern is formed between the particles 440 and no pattern is formed under the particles 440.
  • an etching process is performed using the pattern mask 450 to form a plurality of first engraved patterns 158a and a plurality of first protrusions 158b on one side of the light emitting layer 150a.
  • a first non-uniform area 158 may be formed.
  • the first conductive semiconductor layer 151 of the light emitting layer 150a corresponding to the pattern of the pattern mask 450 is removed, but the first conductive semiconductor layer 151 of the light emitting layer 150a corresponding to the pattern of the pattern mask 450 is removed. (151) may not be removed. While the etching process continues to be performed, the first conductive semiconductor layer 151 corresponding to the pattern of the pattern mask 450 is also overetched, so that a first peak P1 is formed at the vertex of the first protrusion 158b. You can. Meanwhile, the deepest bottom of the first engraved pattern 158a becomes increasingly difficult to etch, and furrows or valleys may be formed.
  • the pattern mask 450 may be removed.
  • the first electrode 154 may be formed on the first non-uniform area 158.
  • the first electrode 154 may include a second non-uniform area 156 having a shape corresponding to the shape of the first non-uniform area 158.
  • the second non-uniform area 156 may also include a plurality of second engraved patterns 156a and a plurality of second protrusions 156b.
  • Each of the plurality of second engraved patterns 156a may have a shape corresponding to the shape of the plurality of first engraved patterns 158a.
  • Each of the plurality of second protrusions 156b may have a shape corresponding to the shape of the plurality of first protrusions 158b.
  • the semiconductor light emitting device 150A As described above, the semiconductor light emitting device 150A according to the first embodiment consisting of the light emitting layer 150a, the passivation layer 157, the first electrode 154, and the second electrode 155 can be manufactured.
  • the semiconductor light emitting device 150A according to the first embodiment can be separated from the temporary substrate 420 by removing the regenerative layer using an etchant.
  • Figure 18 is a cross-sectional view showing a display device according to the first embodiment.
  • the display device 301 includes a backplane substrate 300A, a semiconductor light emitting device 150A, a fixing member 390, a connection electrode 370, and an electrode wire 380. can do.
  • the backplane substrate 300A may be a base substrate for manufacturing the display device 301 by performing post-processes such as a self-assembly process and electrical connection. That is, the semiconductor light-emitting device 150A is assembled on the backplane substrate 300A through a self-assembly process, and an electrical connection to the semiconductor light-emitting device 150A is formed through a post-process, thereby forming the display device according to the first embodiment. (301) can be manufactured.
  • post-processes such as a self-assembly process and electrical connection. That is, the semiconductor light-emitting device 150A is assembled on the backplane substrate 300A through a self-assembly process, and an electrical connection to the semiconductor light-emitting device 150A is formed through a post-process, thereby forming the display device according to the first embodiment. (301) can be manufactured.
  • the backplane substrate 300A may include a substrate 310, a first assembly wiring 321, a second assembly wiring 322, a first insulating layer 330, and a partition wall 340. You can.
  • the backplane substrate 300A can be manufactured by forming the first assembly wiring 321, the second assembly wiring 322, the first insulating layer 330, and the partition wall 340 on the substrate 310. .
  • the substrate 310 includes components of the display device 301 according to the first embodiment, that is, a semiconductor light emitting element 150A, a connection electrode 370, a second insulating layer 350, and a third insulating layer 360. , a support substrate for supporting the electrode wiring 380, etc., and may be called a lower substrate or a display substrate. Although not shown, an upper substrate may be disposed on the electrode wiring 380, but this is not limited.
  • the first assembly wiring 321 may be disposed on the substrate 310 .
  • the second assembly wiring 322 may be disposed on the substrate 310 .
  • first assembly wiring 321 and the second assembly wiring 322 may each be disposed on the same layer.
  • first and second assembly wirings 322 (321, 322) may be in contact with the upper surface of the substrate 310, but this is not limited.
  • the first assembly wiring 321 and the second assembly wiring 322 may each be disposed on the same layer.
  • the first assembly wiring 321 and the second assembly wiring 322 may be arranged parallel to each other.
  • the first assembly wiring 321 and the second assembly wiring 322 may each serve to assemble the semiconductor light emitting device 150A into the assembly hole 340H using a self-assembly method.
  • the semiconductor light emitting device 150A which is moving, may be assembled in the assembly hole 340H by the assembly device (1100 in FIG. 6) by the DEP force formed by the electric field.
  • the assembly hole 340H may have a diameter larger than the diameter of the semiconductor light emitting device 150A.
  • the first assembly wiring 321 and the second assembly wiring 322 may each include a plurality of metal layers. Although not shown, the first assembly wiring 321 and the second assembly wiring 322 may include a main wiring and an auxiliary electrode, respectively.
  • the main wiring of each of the first assembly wiring 321 and the second assembly wiring 322 may be arranged long along one direction of the substrate 310 .
  • the auxiliary electrodes of each of the first assembly wiring 321 and the second assembly wiring 322 may extend from the main wiring toward the assembly hole 340H.
  • the auxiliary electrode may be electrically connected to the main wiring.
  • the main wiring may be disposed on the auxiliary wiring, so that the lower surface of the main wiring may be in contact with the upper surface of the auxiliary wiring, but this is not limited.
  • first assembly wiring 321 and the second assembly wiring 322 may be disposed on different layers.
  • the first insulating layer 330 may be disposed on the first assembly wiring 321 and the second assembly wiring 322.
  • the first insulating layer 330 may be made of an inorganic material or an organic material.
  • the first insulating layer 330 may be made of a material having a dielectric constant related to DEP force. For example, as the dielectric constant of the first insulating layer 330 increases, the DEP force may increase, but this is not limited.
  • the first insulating layer 330 prevents fluid from directly contacting the first assembly wiring 321 or the second assembly wiring 322 and causing corrosion during self-assembly by the assembly hole 340H of the partition wall 340 formed later. can do.
  • the drawing shows that the first insulating layer 330 has been removed from the assembly hole 340H, the first insulating layer 330 may remain in the assembly hole 340H on the backplane substrate 300A without being removed. there is.
  • the process of removing the first insulating layer 330 in the assembly hole 340H may be performed after the semiconductor light emitting device 150A is assembled in the assembly hole 340H. Removal of the first insulating layer 330 within the assembly hole 340H is to electrically connect the connection electrode 370 to the first assembly wiring 321 and/or the second assembly wiring 322.
  • the partition wall 340 may be disposed on the first insulating layer 330 .
  • the first insulating layer 330 may have an assembly hole 340H.
  • the assembly hole 340H may be formed in each of the plurality of sub-pixels (PX1, PX2, and PX3) of each of the plurality of pixels (PX in FIG. 2). That is, each sub-pixel (PX1, PX2, PX3) may be formed in one assembly hole (340H), but this is not limited.
  • the first insulating layer 330 may be exposed within the assembly hole 340H.
  • the bottom surface of the assembly hole 340H may be the top surface of the first insulating layer 330.
  • the height (or thickness) of the partition wall 340 may be determined by considering the thickness of the semiconductor light emitting device 150A.
  • a pixel circuit and a plurality of signal lines connected to each pixel circuit may be provided at each of the plurality of pixels on the backplane substrate 300A.
  • the signal lines may include data lines D1 to Dm, scan lines S1 to Sn, high potential voltage lines VDDL, and low potential voltage lines VSSL shown in FIGS. 2 and 3 .
  • a self-assembly process is performed on the backplane substrate 300A configured as described above, so that a plurality of semiconductor light emitting devices 150A are formed in each of the plurality of pixels PX on the substrate 310 and a plurality of sub-pixels PX1, PX2, and PX3. ) can be assembled.
  • each of a plurality of red semiconductor light-emitting devices, a plurality of green semiconductor light-emitting devices, and a plurality of blue semiconductor light-emitting devices are sequentially formed into a plurality of sub-pixels (PX1, PX2, Can be assembled on PX3).
  • a plurality of red semiconductor light-emitting devices, a plurality of green semiconductor light-emitting devices, and a plurality of blue semiconductor light-emitting devices are simultaneously connected to a plurality of pixels (PX) on the substrate 310 and a plurality of sub-pixels (PX1, PX2, and PX3), respectively.
  • PX pixels
  • PX1, PX2, and PX3 sub-pixels
  • a plurality of red semiconductor light-emitting devices, a plurality of green semiconductor light-emitting devices, and a plurality of blue semiconductor light-emitting devices may be dropped into the fluid of the chamber and mixed.
  • the same self-assembly process is performed so that a plurality of red semiconductor light-emitting devices, a plurality of green semiconductor light-emitting devices, and a plurality of blue semiconductor light-emitting devices are simultaneously formed into a plurality of sub-pixels ( Can be assembled on PX1, PX2, PX3).
  • the red semiconductor light-emitting device, the green semiconductor light-emitting device, and the blue semiconductor light-emitting device may each have exclusivity from each other. That is, the shapes and sizes of the red semiconductor light-emitting device, green semiconductor light-emitting device, and blue semiconductor light-emitting device may be different.
  • the red semiconductor light emitting device may have a circular shape
  • the green semiconductor light emitting device may have a first oval shape with a first minor axis and a first major axis
  • the blue semiconductor light emitting device may have a second oval shape.
  • the second oval may have a second minor axis that is smaller than the first minor axis and a second major axis that is larger than the first major axis.
  • the semiconductor light emitting device 150A may be disposed in the assembly hole 340H.
  • the semiconductor light emitting device 150A may be the semiconductor light emitting device 150A shown in FIG. 7 .
  • the semiconductor light emitting device 150A may be a red semiconductor light emitting device that generates red light, a green semiconductor light emitting device that generates green light, or a blue semiconductor light emitting device that generates blue light.
  • the red semiconductor light-emitting device, the green semiconductor light-emitting device, and the blue semiconductor light-emitting device distributed in the same chamber (1300 in FIG. 6) are simultaneously moved by the same assembly device 1100 to form the corresponding sub-pixel (FIG. 2 (PX1, PX2, PX3) can be assembled simultaneously in each assembly hole (340H).
  • the red semiconductor light-emitting device, the green semiconductor light-emitting device, and the blue semiconductor light-emitting device are placed in the assembly hole 340H where they will be assembled. It can be assembled in another assembly hole (340H) without being assembled.
  • the shapes of each of the red semiconductor light-emitting device, green semiconductor light-emitting device, and blue semiconductor light-emitting device are changed to correspond to the different shapes of the red semiconductor light-emitting device, green semiconductor light-emitting device, and blue semiconductor light-emitting device, respectively.
  • An assembly hole 340H may be formed. In other words, it is possible to prevent assembly defects or color mixing defects by increasing exclusivity between semiconductor light emitting devices.
  • the shape of the red semiconductor light emitting device is circular
  • the shape of the green semiconductor light emitting device is a first oval with a first minor axis and a first major axis
  • the shape of the blue semiconductor light emitting device is a second minor axis smaller than the first minor axis and a second major axis. It may be a second oval shape with a second major axis greater than the first major axis.
  • the semiconductor light emitting device 150A may be disposed in the assembly hole 340H to generate colored light.
  • the semiconductor light emitting device 150A may include one of a red semiconductor light emitting device, a green semiconductor light emitting device, and a blue semiconductor light emitting device.
  • the red semiconductor light-emitting device is placed in the first sub-pixel (PX1 in FIG. 2)
  • the green semiconductor light-emitting device is located in the second sub-pixel (PX2)
  • the blue semiconductor light-emitting device is located in the third sub-pixel (PX3). can be placed.
  • a full-color image can be displayed by red light emitted from the first sub-pixel (PX1), green light emitted from the second sub-pixel (PX2), and blue light emitted from the third sub-pixel (PX3).
  • the semiconductor light emitting device 150A of the embodiment may be a vertical semiconductor light emitting device, but is not limited thereto.
  • the first electrode 154 of the semiconductor light emitting device is electrically connected to the lower electrode wiring, that is, the first assembly wiring 321 or the second assembly wiring 322. and the upper side of the semiconductor light emitting device 150A may be electrically connected to the electrode wiring 380.
  • the fixing member 390 may be placed in the assembly hole 340H of the backplane substrate 300A.
  • the fixing member 390 may be disposed between the semiconductor light emitting device 150A and the bottom surface of the assembly hole 340H.
  • the fixing member 390 may include an organic material, but is not limited thereto.
  • the semiconductor light emitting device 150A may be fixed within the assembly hole 340H by the fixing member 390. That is, the fixing member 390 may fix the semiconductor light emitting device 150A to the first insulating layer 330 within the assembly hole 340H.
  • the fixing member 390 may be formed by the following process. First, an insulating film may be formed on the substrate 310 including the assembly hole 340H. In this case, an insulating film may be formed around the semiconductor light emitting device 150A within the assembly hole 340H. Thereafter, the insulating film on the substrate 310 may be removed through an etching process. At this time, since the semiconductor light emitting device 150A serves as a mask, the insulating film located below the semiconductor light emitting device 150A remains without being removed and can be formed as a fixing member 390. That is, the insulating film located below the semiconductor light emitting device 150A may serve as the fixing member 390.
  • the fixing member 390 may have a shape corresponding to the shape of the semiconductor light emitting device 150A.
  • the diameter (or width) of the fixing member 390 may be the same as the diameter (or width) of the semiconductor light emitting device 150A, but this is not limited.
  • the first electrode 154 including the second non-uniform region 156 may be formed below the semiconductor light emitting device 150A. That is, the second non-uniform area 156 may include a plurality of second engraved patterns 156a and a plurality of second protrusions 156b.
  • the fixing member 390 may be disposed in a plurality of second engraved patterns 156a, as shown in FIG. 18. For example, the fixing member 390 may contact the second engraved pattern 156a within the plurality of second engraved patterns 156a.
  • the contact area between the fixing member 390 and the first electrode 154 is significantly increased, so that the semiconductor light emitting device 150A is connected to the first insulating layer 330 of the backplane substrate 300A by the fixing member 390. ), the fixation of the semiconductor light emitting device 150A can be further strengthened.
  • connection electrode 370 may be disposed in the assembly hole 340H.
  • the connection electrode 370 may be electrically connected to the side of the semiconductor light emitting device 150A within the assembly hole 340H.
  • the connection electrode 370 may be electrically connected to the first assembly wiring 321 and/or the second assembly wiring 322 within the assembly hole 340H. Accordingly, the connection electrode 370 may electrically connect the side of the semiconductor light emitting device 150A and the first assembly wiring 321 and/or the second assembly wiring 322.
  • connection electrode 370 may be made of at least one layer with excellent electrical conductivity.
  • the connection electrode 370 may include a first layer containing molybdenum (Mo), a second layer containing aluminum (Al), and a third layer containing molybdenum (Mo).
  • connection electrode 370 may be disposed along the perimeter of the semiconductor light emitting device 150A within the assembly hole 340H.
  • the connection electrode 370 may be disposed between the inner side of the assembly hole 340H and the outer side of the semiconductor light emitting device 150A.
  • the display device 301 may include a second insulating layer 350 and a third insulating layer 360.
  • the second insulating layer 350 and the third insulating layer 360 may include organic materials such as PAC, PI, polymer, etc. or inorganic materials such as SiO 2 and SiN
  • the second insulating layer 350 and/or the third insulating layer 360 may include a photosensitive material.
  • the second insulating layer 350 and the third insulating layer 360 may include the same material, but are not limited thereto.
  • the second insulating layer 350 may serve as a stopper that determines the height of the connection electrode 370. That is, the height of the connection electrode 370 can be equal to the height of the second insulating layer 350. That is, if the height of the second insulating layer 350 is increased, the height of the connection electrode 370 can also be increased.
  • the third insulating layer 360 may be a fixed layer for fixing the semiconductor light emitting device 150A or a planarization layer for easy formation of layers formed by a post-process.
  • the top surface of the third insulating layer 360 may have a straight plane.
  • the third insulating layer 360 may be formed only within the assembly hole 340H and may not be formed on the semiconductor light emitting device 150A. Although not shown, a third insulating layer 360 may be formed on the semiconductor light emitting device 150A. In this case, the electrode wire 380 may be electrically connected to the upper side of the semiconductor light emitting device 150A through the third insulating layer 360. To this end, a contact hole may be formed in the third insulating layer 360 to form the electrode wiring 380. Meanwhile, the third insulating layer 360 may be formed on the partition wall 340.
  • the electrode wiring 380 may be disposed on the semiconductor light emitting device 150A. Since the third insulating layer 360 is not formed on the semiconductor light emitting device 150A, the electrode wiring 380 can be directly connected to the upper side of the semiconductor light emitting device 150A. That is, the electrode wiring 380 can contact the upper side of the semiconductor light emitting device 150A, that is, the upper surface of the second electrode 155, without being obstructed by the third insulating layer 360. For example, the electrode wire 380 may be in surface contact with the upper surface of the second electrode 155 of the semiconductor light emitting device 150A.
  • the semiconductor light emitting device 150A may emit light by the voltage supplied to the electrode wiring 380, the first assembly wiring 321, and/or the second assembly wiring 322.
  • 20A to 25 show a method of manufacturing a display device according to the first embodiment.
  • a backplane substrate 300A may be prepared.
  • the backplane substrate 300A may be mounted in the chamber for self-assembly.
  • the semiconductor light emitting device 150A may be dispersed in the fluid of the chamber.
  • the semiconductor light emitting device 150A when the magnet moves, the semiconductor light emitting device 150A, which is affected by the magnetic field of the magnet, may move toward the magnet. As the magnet moves horizontally with respect to the surface of the backplane substrate 300A, the semiconductor light emitting device 150A may move horizontally with respect to the surface of the backplane substrate 300A, but the present invention is not limited thereto.
  • a DEP force may be formed in each of the plurality of sub-pixels.
  • the semiconductor light emitting device 150A When the semiconductor light emitting device 150A, which is moving by a magnet, passes through the assembly hole 340H of the backplane substrate 300A, the semiconductor light emitting device 150A may be pulled by DEP force and assembled in the assembly hole 340H.
  • the first electrode 154 of the semiconductor light emitting device 150A will include a second non-uniform region 156 having a plurality of second engraved patterns 156a and a plurality of second protrusions 156b. You can. As shown in FIG. 20B, a relatively large DEP force may be formed on each of the second protrusions 156b of the first electrode 154. That is, as in the comparative example, when the first electrode 154 does not include the second non-uniform region 156, that is, when the first electrode 154 has a straight plane, the DEP force is relatively small.
  • the second non-uniform region 156 has a plurality of second engraved patterns 156a and a plurality of second protrusions 156b on the first electrode 154 of the semiconductor light emitting device 150A.
  • the DEP force is formed larger than that of the comparative example.
  • the DEP force is relatively larger at each of the plurality of second protrusions 156b of the first electrode 154.
  • the semiconductor light emitting device 150A of the embodiment passes the assembly hole 340H while moving horizontally with respect to the surface of the backplane substrate 300A, the first electrode of the semiconductor light emitting device 150A is in the assembly hole 340H. Since a larger DEP force is formed by the plurality of second protrusions 156b included in 154, the semiconductor light emitting device 150A can be immediately pulled and assembled in the corresponding assembly hole 340H. In addition, the semiconductor light emitting device 150A can be strongly fixed to the assembly hole 340H by an even greater DEP force. Accordingly, the assembly rate of the semiconductor light emitting device 150A is improved, separation of the semiconductor light emitting device 150A is prevented, assembly defects are reduced, and lighting yield can be increased.
  • an insulating film 390a may be formed on the substrate 310.
  • the insulating film 390a may be formed not only in the partition wall 340 but also in the assembly hole 340H.
  • the insulating film 390a on the substrate 310 may be removed through an etching process.
  • the semiconductor light emitting device 150A serves as a mask
  • the insulating film 390a located below the semiconductor light emitting device 150A remains without being removed and may be formed as a fixing member 390. That is, the insulating film 390a located below the semiconductor light emitting device 150A may serve as the fixing member 390.
  • the first electrode 154 provided on the lower side of the semiconductor light emitting device 150A may include a plurality of second engraved patterns 156a and a plurality of second protrusions 156b.
  • the fixing member 390 is formed in the plurality of second engraved patterns 156a, the contact area between the solid member and the semiconductor light emitting device 150A can be significantly increased. Accordingly, since the semiconductor light emitting device 150A is more firmly fixed to the first insulating layer 330 of the backplane substrate 300A by the fixing member 390, the fixation of the semiconductor light emitting device 150A is further improved. It can be strengthened. Since the semiconductor light emitting device 150A does not fall out of the assembly hole 340H until an electrical connection is formed in a later process, assembly defects can be prevented and lighting yield can be improved.
  • an etching process may be performed to remove the first insulating layer 330 exposed in the assembly hole 340H, exposing the first assembly wiring 321 and/or the second assembly wiring 322. there is.
  • the semiconductor light emitting device 150A and the fixing member 390 serve as a mask, the first insulating layer 330 located below the fixing member 390 in the assembly hole 340H is not removed and the semiconductor light emitting device 390 is not removed.
  • the first insulating layer 330 located around the device 150A may be removed.
  • a metal film 370a may be deposited on the partition wall 340 and the semiconductor light emitting device 150A. Afterwards, an insulating film 350a may be formed on the metal film 370a.
  • the insulating film 350a may be formed on the entire area of the substrate 310.
  • the insulating film 350a may be made of an organic material that is easy to form a large thickness, but an inorganic material can also be used.
  • the top surface of the insulating film 350a is removed through an ashing process, so that the top surface of the insulating film 350a can be positioned in the assembly hole 340H. Afterwards, an etching process is performed to etch the metal film 370a, thereby forming the connection electrode 370.
  • the second insulating layer 350 may serve as a stopper to prevent the metal film 370a from being etched further below the top surface of the insulating film 350a.
  • the third insulating layer 360 is formed in the assembly hole 340H, and the electrode wire 380 may be disposed on the upper side of the semiconductor light emitting device 150A.
  • the electrode wire 380 may be disposed on the third insulating layer 360.
  • the top surface of the third insulating layer 360 and the top surface of the second electrode 155 of the semiconductor light emitting device 150A may be located on the same horizontal line, but this is not limited.
  • the passivation layer 157 may be removed on the upper side of the semiconductor light emitting device 150A. Removal of the passivation layer 157 may be performed after the fixing member 390 is formed (FIG. 22) or after the connection electrode 370 is formed (FIG. 24), but this is not limited.
  • Figure 26 is a cross-sectional view showing a semiconductor light-emitting device according to the second embodiment.
  • FIG. 27 is a bottom view of the semiconductor light emitting device according to the second embodiment when the first electrode 154 is removed.
  • the second embodiment is the same as the first embodiment except for the first uniform area 158' and the second uniform area 156'.
  • components having the same shape, structure, and/or function as those of the first embodiment are assigned the same reference numerals and detailed descriptions are omitted.
  • the semiconductor light emitting device 150B includes a light emitting layer 150a, a passivation layer 157, a first non-uniform region 158, and a first uniform region 158'. , may include a first electrode 154 and a second electrode 155.
  • the first non-uniform area 158 and the first uniform area 158' may be disposed under the light emitting layer 150a.
  • the first non-uniform area 158 and the first uniform area 158' may be disposed on the lower side of the light emitting layer 150a.
  • the first non-uniform region 158 and the first uniform region 158' may be formed on the lower surface of the first conductive semiconductor layer 151.
  • the first non-uniform region 158 and the first uniform region 158' may be part of the first conductive semiconductor layer 151.
  • the first non-uniform region 158 including a plurality of first engraved patterns 158a and a plurality of first protrusions 158b and the first rib are formed.
  • a first uniform area 158' having a groove may be formed.
  • the first uniform region 158' may be disposed long in both directions from the center of the lower side of the light emitting layer 150a.
  • the first uniform area 158' may have a flat surface.
  • the first uniform region 158' may have fine roughness depending on the degree of etching, but this is not limited.
  • the first uniform area 158' may have a first recess. That is, by etching the light emitting layer 150a from the bottom to the inside, a first recess may be formed in the first uniform area 158'.
  • the lower side of the light-emitting layer 150a may be in an unetched state, that is, the lower surface of the first conductive semiconductor layer 151 of the light-emitting layer 150a may be the first uniform region 158', but this is not limited. No.
  • the first non-uniform area 158 may include a plurality of first engraved patterns 158a and a plurality of first protrusions 158b. Since the first engraved pattern 158a and the first protrusion 158b have been described in detail in the first embodiment, further description is omitted.
  • the first non-uniform area 158 may include a 1-1 non-uniform area 158-1 and a 1-2 non-uniform area 158-2.
  • the 1-1 non-uniform region 158-1 is disposed under the first light-emitting region of the light-emitting layer 150a, and the 1-2 non-uniform region 158-2 is disposed under the second light-emitting region of the light-emitting layer 150a.
  • the 1-1 non-uniform area 158-1 and the 1-2 non-uniform area 158-2 may also be spaced apart.
  • the first light-emitting area and the second light-emitting area are divided for convenience of explanation, and the first light-emitting area and the second light-emitting area may be formed integrally as part of the light-emitting layer 150a.
  • the first uniform area 158' may be located between the 1-1 non-uniform area 158-1 and the 1-2 non-uniform area 158-2. That is, the 1-1 non-uniform area 158-1 and the 1-2 non-uniform area 158-2 may be spaced apart from each other with the first uniform area 158' in between.
  • the 1-1 non-uniform area 158-1 is located on the first side of the first uniform area 158'
  • the 1-2 non-uniform area 158-2 is located on the first uniform area (158-2). 158'). That is, a 1-1 non-uniform area 158-1 and a 1-2 non-uniform area 158-2 may be disposed on both sides of the lower side of the light emitting layer 150a, respectively.
  • the 1-1 non-uniform area 158-1 and the 1-2 non-uniform area 158-2 may include a plurality of first engraved patterns 158a and a plurality of first protrusions 158b, respectively. .
  • the surface of the first uniform area 158' may be located on the same horizontal line as the bottom of the first engraved pattern 158a, but this is not limited.
  • the surface of the first uniform area 158' since the first uniform area 158' has a first recess, the surface of the first uniform area 158', i.e., the bottom of the first recess, is of the first engraved pattern 158a. It may be located on the same horizontal line as the floor.
  • the first uniform area 158' and the second uniform area 156' may not have a first recess and a second recess 159b, respectively.
  • the lower surface of the first conductive semiconductor layer 151 is not etched, the lower surface of the first conductive semiconductor layer 151 itself becomes the first uniform region 158', and the first uniform region 158' A second uniform area 156' of the first electrode 154 may be formed thereon.
  • the surface of the first uniform area 158' may be located on the same horizontal line as the first peak P1 of the first protrusion 158b.
  • the first electrode 154 may include a second non-uniform area 156 and a second uniform area 156'.
  • the second non-uniform area 156 may have a shape corresponding to the shape of the first non-uniform area 158 .
  • the second uniform area 156' may have a shape corresponding to the shape of the first uniform area 158'.
  • the second uniform area 156' may be a second recess 159b corresponding to the first recess.
  • the second uniform area 156' may be disposed long in both directions from the center of the lower side of the light emitting layer 150a.
  • the second uniform area 156' may have a flat surface.
  • the second non-uniform area 156 may include a 2-1 non-uniform area 156-1 and a 2-2 non-uniform area 156-2.
  • the second uniform area 156' may be located between the 2-1 non-uniform area 156-1 and the 2-2 non-uniform area 156-2.
  • the 2-1 non-uniform area 156-1 may have a shape corresponding to the shape of the 1-1 non-uniform area 158-1.
  • the 2-2 non-uniform area 156-2 may have a shape corresponding to the shape of the 1-2 non-uniform area 158-2.
  • the 2-1 non-uniform area 156-1 and the 2-2 non-uniform area 156-2 may include a plurality of second engraved patterns 156a and a plurality of second protrusions 156b, respectively. .
  • the surface of the second uniform area 156' may be located on the same horizontal line as the bottom of the second engraved pattern 156a, but this is not limited.
  • the surface of the second uniform area 156' since the second uniform area 156' has a second recess 159b, the surface of the second uniform area 156', i.e., the bottom of the second recess 159b, has the second recess 159b. It may be located on the same horizontal line as the bottom of the engraved pattern 156a.
  • each of the 2-1 non-uniform area 156-1 and the 2-2 non-uniform area 156-2 located on both sides of the second uniform area 156' in the first electrode 154 is the first non-uniform area 156-1.
  • a DEP force is formed between the first assembled wiring 321 and the second assembled wiring 322, and the 2-1 non-uniform region 156-1 located on both sides of the second uniform region 156'. Since a DEP force greater than that of the second uniform region 156' is formed in each of the and 2-2 non-uniform regions 156-2, the 2-1 ratio of the first electrode 154 of the semiconductor light emitting device 150B The semiconductor light emitting device 150B is self-aligned so that the uniform region 156-1 and the 2-2 non-uniform region 156-2 are aligned with, or overlap, the first assembly wiring 321 and the second assembly wiring 322. Can be sorted.
  • the 2-1 non-uniform area 156-1 and the 2-2 non-uniform area 156-2 located on both sides of the second uniform area 156' respectively have the first assembly wiring 321 and the second non-uniform area 156-2.
  • Alignment to the assembly wiring 322 may be aligned to the correct position of the semiconductor light emitting device 150B. In this case, if the semiconductor light emitting device 150B is not assembled in the correct position in the assembly hole 340H, there is no need to perform a separate alignment process to assemble it in the correct position, and problems caused by not being aligned in the correct position are avoided. That is, electrical connection defects due to misalignment can be prevented.
  • 31 to 40 show a method of manufacturing a semiconductor light emitting device according to a second embodiment.
  • Figure 31 is the same as Figure 11. Accordingly, as shown in FIG. 31 through the process shown in FIGS. 9 and 10, particles 440 may be applied on the surface of the light emitting layer 150a exposed by removing the growth substrate 410.
  • a photoresist film 460a is coated on the particles 440 (FIG. 32), and the photoresist film 460a is patterned to form a PR pattern 460 (FIG. 33).
  • the PR pattern 460 may be formed long along both directions from the center of the light emitting layer 150a.
  • a fixed film 450a may be formed on the particles 440.
  • the fixed film 450a may be formed on the PR pattern 460.
  • the fixed film 450a may include an inorganic material such as SiO2 or SiNx, but is not limited thereto.
  • the fixed film 450a may be formed between the particles 440, under the particles 440, and between the particles 440.
  • the particles 440 can be firmly fixed on the light emitting layer 150a by the fixing film 450a.
  • the PR pattern 460 and the particles 440 fixed by the PR pattern 460 are removed, thereby exposing the center of the light emitting layer 150a.
  • the fixed film 450a located on the particles 440 is removed and the particles 440 are also removed, so that pattern masks 450 can be formed on both sides of the light emitting layer 150a.
  • the pattern mask 450 may have a shape corresponding to the shape of the particle 440.
  • the pattern mask 450 may have a structure in which a pattern is formed between the particles 440 and no pattern is formed under the particles 440.
  • an etching process is performed using the pattern mask 450, so that the center of the light-emitting layer 150a is etched to form a first uniform region 158' having a first recess, and the light-emitting layer 150a is etched. Both sides of (150a) are etched through the patterns of the pattern mask 450 to form a 1-1 non-uniform region 158-1 including a plurality of first engraved patterns 158a and a plurality of first protrusions 158b. ) and a 1-2 non-uniform region 158-2 may be formed.
  • the first conductive semiconductor layer 151 of the light emitting layer 150a corresponding to the pattern of the pattern mask 450 is removed, but the first conductive semiconductor layer 151 of the light emitting layer 150a corresponding to the pattern of the pattern mask 450 is removed. (151) may not be removed. While the etching process continues to be performed, the first conductive semiconductor layer 151 corresponding to the pattern of the pattern mask 450 is also overetched, so that a first peak P1 is formed at the vertex of the first protrusion 158b. You can. Meanwhile, the deepest bottom of the first engraved pattern 158a becomes increasingly difficult to etch, and furrows or valleys may be formed.
  • the pattern mask 450 may be removed.
  • the first electrode 154 is formed on the first uniform region 158', the 1-1 non-uniform region 158-1, and the 1-2 non-uniform region 158-2. This can be formed.
  • the first electrode 154 may include a second non-uniform area 156 and a second uniform area 156'.
  • the second non-uniform area 156 may include a 2-1 non-uniform area 156-1 and a 2-2 non-uniform area 156-2.
  • the 2-1 non-uniform area 156-1 may have a shape corresponding to the shape of the 1-1 non-uniform area 158-1.
  • the 2-2 non-uniform area 156-2 may have a shape corresponding to the shape of the 1-2 non-uniform area 158-2.
  • the second uniform area 156' may have a shape corresponding to the shape of the first uniform area 158'.
  • the 2-1 non-uniform area 156-1 and the 2-2 non-uniform area 156-2 include a plurality of second engraved patterns 156a and a plurality of second protrusions 156b, respectively. can do.
  • the semiconductor light emitting device 150B consisting of the light emitting layer 150a, the passivation layer 157, the first electrode 154, and the second electrode 155 can be manufactured.
  • the semiconductor light emitting device 150B according to the second embodiment can be separated from the temporary substrate 420 by removing the regenerative layer using an etchant.
  • Figure 41 is a cross-sectional view showing a display device according to a second embodiment.
  • the second embodiment is the same as the first embodiment (FIG. 18) except for the semiconductor light emitting device 150B.
  • components having the same shape, structure, and/or function as those of the first embodiment are assigned the same reference numerals and detailed descriptions are omitted.
  • the display device 302 includes a backplane substrate 300A, a semiconductor light emitting device 150B, a fixing member 390, a connection electrode 370, and an electrode wire 380. can do.
  • the semiconductor light-emitting device 150B may be the semiconductor light-emitting device 150B according to the second embodiment shown in FIG. 26.
  • a second recess 159b is formed in the lower center of the semiconductor light emitting device 150B, and the fixing member 390 is disposed in the second recess 159b, so that the fixing member 390 and the semiconductor light emitting device 150B )
  • the contact area between the two can be significantly increased. Accordingly, the fixation of the semiconductor light emitting device 150B is further strengthened by the fixing member 390, preventing assembly defects, and improving lighting yield.
  • Figure 42 is a cross-sectional view showing a semiconductor light emitting device according to the third embodiment.
  • Figure 43 is a bottom view of the semiconductor light emitting device according to the third embodiment when the first electrode 154 is removed.
  • the third embodiment is the same as the second embodiment except for the arrangement positions of the second uniform area 156' and the second non-uniform area 156 of the first electrode 154.
  • components having the same shape, structure, and/or function as those of the second embodiment are assigned the same reference numerals and detailed descriptions are omitted.
  • the semiconductor light emitting device 150C includes a light emitting layer 150a, a passivation layer 157, a first non-uniform region 158, and a first uniform region 158'. , may include a first electrode 154 and a second electrode 155.
  • the first non-uniform region 158 may be arranged long in both directions from the center of the light emitting layer 150a.
  • the first non-uniform area 158 may include a plurality of first engraved patterns 158a and a plurality of first protrusions 158b.
  • the first uniform area 158' may include a 1-1 uniform area and a 1-2 uniform area.
  • the 1-1st uniform area and the 1-2nd uniform area may be disposed on both sides of the light emitting layer 150a.
  • the first non-uniform area 158 may be located between the 1-1st uniform area and the 1-2nd uniform area.
  • the 1-1st uniform area may be located on one side of the first non-uniform area 158, and the 1-2 uniform area may be located on the other side of the first non-uniform area 158.
  • the 1-1 uniform region may have a 1-1 recess 159a-1, and the 1-2 uniform region may have a 1-2 recess 159a-2.
  • the 1-1 recess 159a-1 and the 1-2 recess 159a-2 may have the same depth, but this is not limited.
  • the first electrode 154 may include a second uniform area 156' and a second non-uniform area 156.
  • the second non-uniform area 156 may have a shape corresponding to the shape of the first non-uniform area 158 .
  • the second uniform area 156' may have a shape corresponding to the shape of the first uniform area 158'.
  • the second non-uniform area 156 may include a plurality of second engraved patterns 156a and a plurality of second protrusions 156b.
  • the second uniform area 156' may include a 2-1 uniform area 156'-1 and a 2-2 uniform area 156'-2.
  • the 2-1st uniform area 156'-1 may have a shape corresponding to the shape of the 1-1st uniform area.
  • the 2-2nd uniform region 156'-2 may have a shape corresponding to the shape of the 1-2nd uniform region.
  • the 2-1 uniform region 156'-1 has a 2-1 recess 159b-1
  • the 2-2 uniform region 156'-2 has a 2-2 recess 159b-2.
  • the 2-1 recess 159b-1 and the 2-2 recess 159b-2 may have the same depth, but this is not limited.
  • the first uniform area 158' and the second uniform area 156' may not have a first recess and a second recess 159b, respectively.
  • the lower surface of the first conductive semiconductor layer 151 is not etched, the lower surface of the first conductive semiconductor layer 151 itself becomes the first uniform region 158', and the first uniform region 158' A second uniform area 156' of the first electrode 154 may be formed thereon.
  • the surface of the first uniform area 158' may be located on the same horizontal line as the first peak P1 of the first protrusion 158b.
  • the second non-uniform area 156 may be located between the 2-1st uniform area and the 2-2nd uniform area 156'-2.
  • Figure 44 is a cross-sectional view showing a display device according to a third embodiment.
  • the third embodiment is the same as the first embodiment (FIG. 18) except for the semiconductor light emitting device 150C.
  • components having the same shape, structure, and/or function as those of the first embodiment are assigned the same reference numerals and detailed descriptions are omitted.
  • the display device 303 includes a backplane substrate 300A, a semiconductor light emitting device 150C, a fixing member 390, a connection electrode 370, and an electrode wire 380. can do.
  • the semiconductor light emitting device 150C may be the semiconductor light emitting device 150C according to the third embodiment shown in FIG. 42.
  • a 2-1 recess 159b-1 and a 2-2 recess 159b-2 are formed on both sides of the lower side of the semiconductor light emitting device 150C, and the fixing member 390 is formed in the 2-1 recess. Since it is disposed in the 2-2 recess 159b-1 and 159b-2, the contact area between the fixing member 390 and the semiconductor light emitting device 150C can be significantly increased. Accordingly, the fixation of the semiconductor light emitting device 150C can be further strengthened by the fixing member 390, preventing assembly defects, and improving lighting yield.
  • the display device described above may be a display panel. That is, in the embodiment, the display device and the display panel may be understood to have the same meaning.
  • a display device in a practical sense may include a display panel and a controller (or processor) capable of controlling the display panel to display an image.
  • Embodiments may be adopted in the field of displays that display images or information. Embodiments may be adopted in the field of displays that display images or information using semiconductor light-emitting devices.
  • the semiconductor light-emitting device may be a micro-level semiconductor light-emitting device or a nano-level semiconductor light-emitting device.
  • embodiments include TVs, Shiny, mobile terminals such as mobile phones and smart phones, displays for computers such as laptops and desktops, head-up displays (HUDs) for automobiles, backlight units for displays, AR, and VR. , it can be adopted for displays and light sources for XR (Extend Reality) such as MR (mixed reality).
  • XR Extend Reality
  • MR mixed reality

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Abstract

L'invention concerne un élément électroluminescent à semi-conducteur comprenant : une première électrode comprenant une couche électroluminescente, une couche de passivation entourant la couche électroluminescente, une première région non uniforme sous la couche électroluminescente, et une seconde région non uniforme sous la première région non uniforme ; et une seconde électrode sur la couche électroluminescente. La première région non uniforme peut comprendre une pluralité de premiers motifs gravés et une pluralité de premières saillies disposées dans la pluralité de premiers motifs gravés, respectivement. La seconde région non uniforme peut comprendre une pluralité de seconds motifs gravés et une pluralité de secondes saillies disposées dans la pluralité de seconds motifs gravés, respectivement. La pluralité de seconds motifs gravés peut avoir une forme correspondant à la forme de la pluralité de premiers motifs gravés, respectivement. La pluralité de secondes saillies ont une forme correspondant à la forme de la pluralité de premières saillies, respectivement.
PCT/KR2022/018912 2022-11-28 2022-11-28 Élément électroluminescent à semi-conducteur et dispositif d'affichage WO2024117272A1 (fr)

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Citations (5)

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