WO2024112071A1 - Deposition raw material unit feeding apparatus with recipe for chemical vapor deposition process and chemical vapor deposition apparatus comprising same - Google Patents

Deposition raw material unit feeding apparatus with recipe for chemical vapor deposition process and chemical vapor deposition apparatus comprising same Download PDF

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Publication number
WO2024112071A1
WO2024112071A1 PCT/KR2023/018798 KR2023018798W WO2024112071A1 WO 2024112071 A1 WO2024112071 A1 WO 2024112071A1 KR 2023018798 W KR2023018798 W KR 2023018798W WO 2024112071 A1 WO2024112071 A1 WO 2024112071A1
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chemical vapor
vapor deposition
raw material
recipe
deposition
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PCT/KR2023/018798
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French (fr)
Korean (ko)
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김호연
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(주) 딥스마텍
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

Definitions

  • the present invention relates to a deposition raw material unit supply device to which a recipe for a chemical vapor deposition process is applied and a chemical vapor deposition device including the same.
  • the Chemical Vapor Deposition (CVD) method injects gaseous raw material into the chamber of a reaction device and activates and decomposes it using light, heat, plasma, microwaves, X-rays, electric fields, etc. to initiate a chemical reaction. It is a technology that forms a thin film on the surface of deposition objects such as semiconductors, fabrics, paper, plastics, and metal materials.
  • the equipment for the chemical vapor deposition process includes a reaction chamber where the deposition object is introduced and a chemical reaction occurs to deposit a thin film, a supply unit that supplies the deposition raw material (raw material gas) to the reaction chamber, and a device that fixes the deposition object and controls the position of the deposition object. It includes a stage and a power source that supplies heat energy required for the reaction.
  • the deposition raw materials in the supply section are made up of functional materials and catalyst materials, and their types may vary depending on the function and deposition object. These deposition raw materials were supplied into the reaction chamber at a preset ratio. The supplied materials are deposited on the deposition object to form a thin film. However, during the process of supplying materials to the reaction chamber, contamination or deterioration of the materials occurred, or the supply conditions of each material were not precisely controlled, so supply exceeded the preset ratio frequently occurred, causing deposition defects. Accordingly, the expertise of highly skilled engineers was required, which became a factor that hindered the smooth use of chemical vapor deposition.
  • the present invention provides a technology to increase the efficiency of the deposition process by supplying a fixed amount of deposition raw materials to the reaction chamber of a chemical vapor deposition apparatus.
  • a deposition raw material unit supply device to which a recipe for a chemical vapor deposition process according to an exemplary embodiment of the present invention is applied includes a capsule body in which an internal space in which deposition raw materials and gas can be accommodated is divided by at least one partition, the capsule It includes a capsule cover covering the opening of the main body and a plurality of substrates each disposed on the bottom of the divided internal space.
  • the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process is applied may be disposed inside the capsule body and may further include a moisture permeable member that blocks the liquid phase and allows the gas to permeate.
  • the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process is applied includes a mounting housing having a mounting space in which the capsule body is accommodated, a mounting cover covering the input hole of the mounting housing and having a flow path connected to the mounting, and the mounting. It may further include a plurality of vaporization units disposed at the bottom of the space and each capable of being connected to the plurality of substrates.
  • the plurality of vaporization units may be independently controlled, and the deposition raw material may be vaporized by the plurality of vaporization units and flow into the flow path portion.
  • the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process is applied may be disposed on the mounting cover, connected to the flow path portion, and further include a plurality of needles capable of perforating the capsule cover.
  • the capsule cover is a film that the needle can penetrate, and the capsule cover can be peeled off from the capsule body.
  • the plurality of substrates may be made of metal, and the plurality of vaporizing units may be heating elements or ultrasonic vibrators.
  • the capsule body may be made of metal or plastic, and the partition may be made of polypropylene (PE).
  • PE polypropylene
  • a chemical vapor deposition apparatus includes a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process described above is applied, and a deposition raw material to which the recipe for the chemical vapor deposition process is applied through a flow path portion. It is connected to a unit supply device and includes a chemical vapor deposition chamber in which a deposition space is located where a deposition object is located.
  • the capsule part is manufactured in a state that reflects the supply amount ratio of materials of deposition raw materials
  • materials can be supplied to the chemical vapor deposition chamber in a uniform amount for which the process is designed. Accordingly, since the materials are supplied to the chemical vapor deposition chamber in proportion and deposited on the deposition object, deposition defects due to the ratio balance of the materials can be eliminated, and since they are used up for one-time or multiple use, contamination can occur due to cumulative use of raw materials. Management problems can be resolved.
  • FIG. 1 is a schematic diagram showing a chemical vapor deposition apparatus according to one exemplary embodiment of the present invention.
  • Figure 2 is an enlarged view of a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 1 is applied.
  • Figure 3 is a schematic diagram showing the capsule portion of the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 2 is applied.
  • Figure 4 is a schematic diagram showing the mounting portion of the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 2 is applied.
  • Figure 5 is a schematic diagram showing the operating state of a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 1 is applied.
  • the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process according to an exemplary embodiment of the present invention is applied can be applied to the chemical vapor deposition apparatus, which is an exemplary embodiment of the present invention.
  • the device for chemical vapor deposition process is described. The explanation will focus on the chemical vapor deposition device using the deposition raw material unit supply device to which the recipe is applied.
  • FIG. 1 is a schematic diagram showing a chemical vapor deposition apparatus according to an exemplary embodiment of the present invention
  • FIG. 2 is an enlarged view of a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of FIG. 1 is applied
  • FIG. 3 is FIG. It is a schematic diagram showing the capsule part of the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 2 is applied
  • Figure 4 is a schematic diagram showing the mounting part of the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 2 is applied
  • FIG. 5 is a schematic diagram showing the operating state of a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of FIG. 1 is applied.
  • the chemical vapor deposition apparatus 1 includes a chemical vapor deposition chamber 100, and a deposition raw material unit supply device to which a recipe for the chemical vapor deposition process is applied ( 400) and supplies materials in a fixed quantity to the chemical vapor deposition chamber 100 to increase the efficiency of the deposition process.
  • the chemical vapor deposition chamber 100 has a deposition space 100a with a preset volume.
  • a deposition object may be input into the deposition space 100a.
  • An injection part is formed on the upper side of the chemical vapor deposition chamber 100, and an exhaust part is formed on the lower side. The injection unit and the exhaust unit are connected to the deposition space 100a.
  • a spray module 200 is disposed on the upper side of the deposition space 100a to spray the supplied deposition raw material into the deposition space 100a.
  • the sprayed deposition raw material may be deposited on the deposition object to form a thin film.
  • a flow module 110 may be disposed around the deposition space 100a to control the dispersion and flow direction of the injected deposition raw material.
  • the flow modules 110 are arranged along the circumferential direction of the deposition space 100a, and may be arranged in plural numbers at intervals in the vertical direction around the circumference. The number of flow modules 110 may vary depending on the volume of the deposition space 100a.
  • the deposition raw material unit supply device 400 to which the recipe for the chemical vapor deposition process is applied includes a capsule portion 410 and a mounting portion 420 and can supply deposition raw materials to the chemical vapor deposition chamber 100.
  • the capsule portion 410 includes a capsule body 411, a substrate 413, and a capsule cover 415.
  • the capsule portion 410 may further include a moisture permeable member 414.
  • the deposition raw material is stored in a liquid state.
  • the deposition raw material may be stored together with the medium material containing the liquid phase.
  • the medium material may be a sponge-shaped porous substrate or a moisture-absorbing film that is constantly wet with liquid.
  • the capsule body 411 forms the outer shape of the capsule portion 410 and has an opening inside and a storage space 411a in which deposition raw materials are stored.
  • the storage space 411a is partitioned by a partition wall 412.
  • the partition 412 is formed from the bottom of the storage space 411a to the opening.
  • a flange (not shown) protruding outward may be formed around the opening in the capsule body 411.
  • FIGS. 2 and 3 there are two partition walls 412 and three partitioned storage spaces 411a.
  • the number of partition walls 412 and the width of the partitioned storage space 411a may vary depending on the deposition object.
  • the partition walls 412 may be arranged at equal or unequal intervals.
  • the volume of each storage space 411a partitioned by the partition walls 412 may vary depending on the supply ratio of materials with functions (water repellent, hydrophilic, antifouling, waterproof, antiviral, biocompatible, bonding). Accordingly, the ratio of substances may be different.
  • the flow rate of the material participating in the reaction may be 0.2 to 100 times that of the material participating in the deposition function depending on the width of the deposition space 100a.
  • the partitioned storage spaces 411a substances can be partitioned and stored in a liquid state. Therefore, substances do not mix with each other in the liquid state.
  • the functions of materials may vary depending on the characteristics of the thin film formed on the surface of the deposition object. Additionally, the storage spaces 411a may be filled with an inert gas such as nitrogen.
  • the capsule body 411 may be made of metal, plastic, etc.
  • the partition wall 412 may be made of polyethylene (PE) or a corrosion-resistant metal.
  • the substrate 413 forms the bottom of each storage space 411a. However, a through hole may be formed in a portion of the bottom of the storage space 411a, and the substrate 413 may be placed in the through hole. Substrate 413 is in contact with the stored material. The substrates 413 of each storage space 411a are spaced apart from each other. The substrate 413 may be made of a metal with high thermal conductivity.
  • the moisture permeable member 414 is formed in the form of a sheet and is disposed between the bottom and the opening of the storage space 411a. Materials are stored between the bottom of the storage space 411a and the moisture permeable member 414. Since substances are in a liquid state, they cannot pass through the moisture-permeable member 414, and gas can pass through the moisture-permeable member 414. Accordingly, when transporting and storing the capsule unit 410, the substances are not mixed with each other.
  • the capsule cover 415 is formed in a sheet shape and can be torn by external force.
  • the capsule cover 415 is placed on the capsule body 411 and its edges are joined along the perimeter of the opening.
  • the capsule cover 415 is also coupled to the partition wall 412. Accordingly, the storage spaces 411a can be completely partitioned.
  • the capsule cover 415 may be torn from the capsule body 411.
  • the mounting portion 420 may include a mounting housing 421, a mounting cover 422, and a vaporizing portion 423.
  • the mounting portion 420 may further include a needle 424. The mounting portion 420 vaporizes the deposition raw material of the capsule portion 410 so that it can be supplied to the chemical vapor deposition chamber 100.
  • a capsule space 421a having an opening is formed in the mounting housing 421.
  • the capsule portion 410 may be introduced into the capsule space 421a through the opening.
  • a seating groove (not shown) in which the flange of the capsule body 411 is placed may be formed around the opening of the mounting housing 421.
  • the vaporization unit 423 is electrically connected to a control unit (not shown) and is disposed at the bottom of the capsule space 421a.
  • the vaporization units 423 are arranged in the same number as the substrate 413 and are partitioned.
  • the vaporization unit 423 includes a heating plate.
  • the heating plate may be a thermoelectric element.
  • the heating plate of the vaporization unit 423 transfers heat at a preset temperature to the substrate 413 so that the materials are vaporized.
  • the vaporization unit 423 may include an ultrasonic vibrator.
  • the ultrasonic vibrator applies ultrasonic waves to the substrate 413 to turn the material into fog particles.
  • the temperature and ultrasonic frequency of the vaporization units 423 can be independently controlled depending on the supply ratio of the materials.
  • the mounting cover 422 is connected to the chemical vapor deposition chamber 100 and the flow path portion 300.
  • the mounting cover 422 is coupled to the mounting housing 421 and covers the opening portion.
  • the mounting cover 422 and the mounting housing 421 can be fixed with a coupling means such as a clamp or bolt.
  • a portion of the mounting cover 422 can press the flange of the capsule body 411 placed in the seating groove. Accordingly, the capsule portion 410 is stably fixed in the capsule space 421a, and the substrates 413 can stably contact the vaporization portions 423.
  • a plurality of needles 424 are arranged at intervals on the inside of the mounting cover 422. Needles 424 protrude toward the bottom of the capsule space 421a. The needle 424 is connected to the flow path of the flow path portion 300.
  • the capsule cover 415 When vacuum pressure is created in the capsule space 421a while the capsule part 410 is fixed in the capsule space 421a, the capsule cover 415 may become convex, and at this time, the needle 424 pierces the capsule cover 415. It can be inserted into the storage space 411a while doing so. However, when the mounting cover 422 is combined with the mounting housing 421, the end of the needle 424 may penetrate the capsule cover 415 and be inserted into the storage space (411a).
  • a lifting unit (not shown) connected to the needle 424 may be disposed on the mounting cover 422. By driving the lifting unit, the needle 424 can descend and pierce the capsule cover 415.
  • Materials vaporized in each storage space 411a may pass through the moisture permeable member 414 in a gaseous state and be supplied to the chemical vapor deposition chamber 100 through the flow path portion 300.
  • the deposition object is introduced into the chemical vapor deposition chamber 100, and in the capsule unit 410, materials according to the deposition object are classified according to function and are independently stored in liquid state in each storage space 411a according to the supply ratio. .
  • the needle 424 penetrates the capsule cover 415 and is inserted into the storage space 411a.
  • the capsule cover 415 becomes convex, allowing the needle 424 to pierce the capsule cover 415.
  • the vaporization units 423 of the heating plate generate preset heat according to the supply ratio of the materials, and the substrates 413 in contact with the vaporization units 423 heat the materials. Materials may be vaporized and flow through the moisture permeable member into the needle 424. And the gaseous materials vaporized by additionally applied heat may be mixed while flowing in the flow path of the flow path portion 300 and supplied to the deposition space 100a through the injection module 200.
  • the capsule unit 410 is manufactured in a state that reflects the ratio of the supply amount of materials, materials can be supplied to the chemical vapor deposition chamber in a uniform amount. Accordingly, the materials are supplied to the chemical vapor deposition chamber in proportion and deposited on the deposition object, so deposition defects due to differences in the proportions of the materials do not occur.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a deposition raw material unit feeding apparatus with a recipe for a chemical vapor deposition process and a chemical vapor deposition apparatus comprising same. The deposition raw material unit feeding apparatus comprises: a capsule body having an inner space for accommodating a deposition raw material and a gas, the inner space being partitioned by at least one partition wall; a capsule cover covering the opening of the capsule body; and a plurality of substrates arranged at the bottoms of the partitions of the inner space, respectively.

Description

화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치 및 이를 포함하는 화학 기상 증착 장치A deposition raw material unit supply device to which a recipe for a chemical vapor deposition process is applied and a chemical vapor deposition device including the same
본 발명은 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치 및 이를 포함하는 화학 기상 증착 장치에 관한 것이다.The present invention relates to a deposition raw material unit supply device to which a recipe for a chemical vapor deposition process is applied and a chemical vapor deposition device including the same.
화학기상증착(Chemical Vapor Deposition; CVD)법은 기체 상태의 원료기체를 반응장치의 챔버 안에 주입하고, 빛, 열, 플라즈마, 마이크로파, X-ray, 전기장 등을 이용하여 활성화 및 분해시켜 화학반응을 통해 반도체, 원단, 지류, 플라스틱, 금속 소재 따위의 증착 대상물의 표면에 박막을 형성하는 기술이다.The Chemical Vapor Deposition (CVD) method injects gaseous raw material into the chamber of a reaction device and activates and decomposes it using light, heat, plasma, microwaves, X-rays, electric fields, etc. to initiate a chemical reaction. It is a technology that forms a thin film on the surface of deposition objects such as semiconductors, fabrics, paper, plastics, and metal materials.
화학기상증착공정을 위한 장비는 증착 대상물이 투입되고 화학반응이 일어나 박막 증착이 이루어지는 반응챔버, 증착 원료(원료기체)를 반응챔버로 공급하는 공급부, 증착 대상물을 고정하고 증착 대상물의 위치를 제어하는 스테이지(stage) 및 반응에 필요한 열에너지를 공급하는 전원부(power source)를 포함한다.The equipment for the chemical vapor deposition process includes a reaction chamber where the deposition object is introduced and a chemical reaction occurs to deposit a thin film, a supply unit that supplies the deposition raw material (raw material gas) to the reaction chamber, and a device that fixes the deposition object and controls the position of the deposition object. It includes a stage and a power source that supplies heat energy required for the reaction.
공급부의 증착 원료는 기능을 나타내는 물질, 촉매를 나타내는 물질 따위로 이루어져 있으며 그 종류는 기능 및 증착 대상물에 따라 달라질 수 있다. 이러한 증착 원료의 물질들을 반응챔버의 내부로 기 설정된 비율로 공급하였다. 공급된 물질들이 증착 대상물에 증착되어 박막이 형성되어 있다. 그러나 물질들을 반응챔버로 공급하는 과정 중에 물질의 오염 또는 열화가 발생하거나 각 물질의 공급조건을 정밀하게 제어하지 못해 기 설정된 비율을 벗어나 공급되는 경우가 빈번하게 발생하여 증착 불량을 야기하였다. 이에 고도의 기술을 가진 엔지니어의 전문성이 요구되어 화학기상증착의 원활한 사용를 방해하는 요인이 되었다.The deposition raw materials in the supply section are made up of functional materials and catalyst materials, and their types may vary depending on the function and deposition object. These deposition raw materials were supplied into the reaction chamber at a preset ratio. The supplied materials are deposited on the deposition object to form a thin film. However, during the process of supplying materials to the reaction chamber, contamination or deterioration of the materials occurred, or the supply conditions of each material were not precisely controlled, so supply exceeded the preset ratio frequently occurred, causing deposition defects. Accordingly, the expertise of highly skilled engineers was required, which became a factor that hindered the smooth use of chemical vapor deposition.
그리고 물질들은 액상의 상태로 구분되어 보관되어 공급된다. 이에 물질 종류별로 공급부를 구성하여야 했다.And the substances are classified, stored, and supplied in a liquid state. Accordingly, the supply department had to be organized by material type.
본 발명은 화학 기상 증착 장치의 반응챔버로 공급되는 증착 원료의 물질들을 정량 공급하여 증착공정의 효율을 높이는 기술을 제공한다.The present invention provides a technology to increase the efficiency of the deposition process by supplying a fixed amount of deposition raw materials to the reaction chamber of a chemical vapor deposition apparatus.
본 발명의 예시적인 한 실시형태에 따른 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치는 증착 원료와 기체가 수용될 수 있는 내부공간이 적어도 하나의 격벽으로 분할되어 있는 캡슐본체, 상기 캡슐본체의 개방부를 덮고 있는 캡슐덮개 및 분할된 상기 내부공간의 바닥에 각각 배치된 복수의 기판을 포함한다.A deposition raw material unit supply device to which a recipe for a chemical vapor deposition process according to an exemplary embodiment of the present invention is applied includes a capsule body in which an internal space in which deposition raw materials and gas can be accommodated is divided by at least one partition, the capsule It includes a capsule cover covering the opening of the main body and a plurality of substrates each disposed on the bottom of the divided internal space.
상기 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치는 상기 캡슐본체의 내부에 배치되어 있고 액상은 차단되고 기체는 투과될 수 있는 투습부재를 더 포함할 수 있다.The deposition raw material unit supply device to which the recipe for the chemical vapor deposition process is applied may be disposed inside the capsule body and may further include a moisture permeable member that blocks the liquid phase and allows the gas to permeate.
상기 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치는 상기 캡슐본체가 수용되는 거치공간이 형성되어 있는 거치하우징, 상기 거치하우징의 투입홀을 덮고 있으며 유로부가 연결되어 있는 거치덮개 및 상기 거치공간의 바닥에 배치되어 있고 상기 복수의 기판과 각각 접속될 수 있는 복수의 기화부를 더 포함할 수 있다.The deposition raw material unit supply device to which the recipe for the chemical vapor deposition process is applied includes a mounting housing having a mounting space in which the capsule body is accommodated, a mounting cover covering the input hole of the mounting housing and having a flow path connected to the mounting, and the mounting. It may further include a plurality of vaporization units disposed at the bottom of the space and each capable of being connected to the plurality of substrates.
상기 복수의 기화부는 독립적으로 제어될 수 있고, 상기 증착 원료는 상기 복수의 기화부에 의해 기화되어 상기 유로부로 유입되어 유동할 수 있다.The plurality of vaporization units may be independently controlled, and the deposition raw material may be vaporized by the plurality of vaporization units and flow into the flow path portion.
상기 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치는 상기 거치덮개에 배치되어 상기 유로부와 연결되어 있으며 상기 캡슐덮개를 타공할 수 있는 복수의 니들을 더 포함할 수 있다.The deposition raw material unit supply device to which the recipe for the chemical vapor deposition process is applied may be disposed on the mounting cover, connected to the flow path portion, and further include a plurality of needles capable of perforating the capsule cover.
상기 캡슐덮개는 상기 니들이 관통할 수 있는 필름이고, 상기 캡슐덮개는 상기 캡슐본체에서 벗겨질 수 있다.The capsule cover is a film that the needle can penetrate, and the capsule cover can be peeled off from the capsule body.
상기 복수의 기판은 금속재이고, 상기 복수의 기화부는 발열체 또는 초음파 진동자일 수 있다.The plurality of substrates may be made of metal, and the plurality of vaporizing units may be heating elements or ultrasonic vibrators.
상기 캡슐본체는 금속 또는 플라스틱일 수 있고, 상기 격벽은 폴리프로필렌(polypropylene; PE)일 수 있다.The capsule body may be made of metal or plastic, and the partition may be made of polypropylene (PE).
본 발명의 예시적인 한 실시형태에 따른 화학 기상 증착 장치는 상기와 같이 기재된 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치, 그리고 유로부를 통해 상기 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치와 연결되어 있고 내부에 증착 대상물이 위치하는 증착공간이 형성된 화학 기상 증착 챔버를 포함한다.A chemical vapor deposition apparatus according to an exemplary embodiment of the present invention includes a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process described above is applied, and a deposition raw material to which the recipe for the chemical vapor deposition process is applied through a flow path portion. It is connected to a unit supply device and includes a chemical vapor deposition chamber in which a deposition space is located where a deposition object is located.
본 발명의 예시적인 실시형태에 따르면, 캡슐부가 증착 원료의 물질들 공급량 비율이 반영된 상태로 제작되므로 물질들을 공정이 설계된 균일한 양으로 화학 기상 증착 챔버에 공급할 수 있다. 이에 물질들이 비율에 맞게 화학 기상 증착 챔버로 공급되어 증착 대상물에 증착되므로 물질들의 비율 균형으로 인한 증착 불량을 근치할 수 있으며 일회용 또는 다회성 사용으로 소진하기 때문에 원료물질의 누적사용으로 오염되어 발생할 수 있는 관리상의 문제를 해결할 수 있다.According to an exemplary embodiment of the present invention, since the capsule part is manufactured in a state that reflects the supply amount ratio of materials of deposition raw materials, materials can be supplied to the chemical vapor deposition chamber in a uniform amount for which the process is designed. Accordingly, since the materials are supplied to the chemical vapor deposition chamber in proportion and deposited on the deposition object, deposition defects due to the ratio balance of the materials can be eliminated, and since they are used up for one-time or multiple use, contamination can occur due to cumulative use of raw materials. Management problems can be resolved.
도 1은 본 발명의 예시적인 한 실시형태에 따른 화학 기상 증착 장치를 나타낸 개략도.1 is a schematic diagram showing a chemical vapor deposition apparatus according to one exemplary embodiment of the present invention.
도 2는 도 1의 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치 확대도.Figure 2 is an enlarged view of a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 1 is applied.
도 3은 도 2의 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치의 캡슐부를 나타낸 개략도.Figure 3 is a schematic diagram showing the capsule portion of the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 2 is applied.
도 4는 도 2의 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치의 거치부를 나타낸 개략도.Figure 4 is a schematic diagram showing the mounting portion of the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 2 is applied.
도 5는 도 1의 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치의 작용 상태를 나타낸 개략도.Figure 5 is a schematic diagram showing the operating state of a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 1 is applied.
이하, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 본 발명의 예시적인 실시형태에 대하여 첨부한 도면을 참고로 하여 상세히 설명한다. 그러나 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 실시예에 한정되지 않는다. 명세서 전체를 통하여 유사한 부분에 대해서는 동일한 도면 부호를 붙였다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily practice the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. Throughout the specification, similar parts are given the same reference numerals.
본 발명의 예시적인 실시형태에 따른 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치는 본 발명의 예시적인 실시형태인 화학 기상 증착 장치에 적용될 수 있는 바, 이하에서는 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치가 적용된 화학 기상 증착 장치 위주로 설명한다.The deposition raw material unit supply device to which the recipe for the chemical vapor deposition process according to an exemplary embodiment of the present invention is applied can be applied to the chemical vapor deposition apparatus, which is an exemplary embodiment of the present invention. Hereinafter, the device for chemical vapor deposition process is described. The explanation will focus on the chemical vapor deposition device using the deposition raw material unit supply device to which the recipe is applied.
그러면 본 발명의 예시적인 한 실시형태에 따른 화학 기상 증착 장치에 대하여 도 1 내지 도 5를 참고하여 설명한다.Next, a chemical vapor deposition apparatus according to an exemplary embodiment of the present invention will be described with reference to FIGS. 1 to 5.
도 1은 본 발명의 예시적인 한 실시형태에 따른 화학 기상 증착 장치를 나타낸 개략도이고, 도 2는 도 1의 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치 확대도이며, 도 3은 도 2의 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치의 캡슐부를 나타낸 개략도이고, 도 4는 도 2의 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치의 거치부를 나타낸 개략도이며, 도 5는 도 1의 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치의 작용 상태를 나타낸 개략도이다.FIG. 1 is a schematic diagram showing a chemical vapor deposition apparatus according to an exemplary embodiment of the present invention, FIG. 2 is an enlarged view of a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of FIG. 1 is applied, and FIG. 3 is FIG. It is a schematic diagram showing the capsule part of the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 2 is applied, and Figure 4 is a schematic diagram showing the mounting part of the deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of Figure 2 is applied, FIG. 5 is a schematic diagram showing the operating state of a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process of FIG. 1 is applied.
도 1 내지 도 5를 참고하면, 본 발명의 예시적인 실시형태에 따른 화학 기상 증착 장치(1)는 화학 기상 증착 챔버(100), 그리고 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치(400)를 포함하며 화학 기상 증착 챔버(100)로 물질들을 정량 공급하여 증착공정의 효율을 높인다.1 to 5, the chemical vapor deposition apparatus 1 according to an exemplary embodiment of the present invention includes a chemical vapor deposition chamber 100, and a deposition raw material unit supply device to which a recipe for the chemical vapor deposition process is applied ( 400) and supplies materials in a fixed quantity to the chemical vapor deposition chamber 100 to increase the efficiency of the deposition process.
화학 기상 증착 챔버(100)는 기 설정된 부피의 증착공간(100a)을 가진다. 증착공간(100a)에는 증착 대상물이 투입될 수 있다. 화학 기상 증착 챔버(100)의 상부측에는 주입부가 형성되어 있고 하부측에는 배기부가 형성되어 있다. 주입부와 배기부는 증착공간(100a)과 연결되어 있다.The chemical vapor deposition chamber 100 has a deposition space 100a with a preset volume. A deposition object may be input into the deposition space 100a. An injection part is formed on the upper side of the chemical vapor deposition chamber 100, and an exhaust part is formed on the lower side. The injection unit and the exhaust unit are connected to the deposition space 100a.
증착공간(100a)의 상부측에는 공급된 증착 원료를 증착공간(100a)으로 분사하는 분사모듈(200)이 배치되어 있다. 분사된 증착 원료는 증착 대상물에 증착되어 박막을 형성할 수 있다.A spray module 200 is disposed on the upper side of the deposition space 100a to spray the supplied deposition raw material into the deposition space 100a. The sprayed deposition raw material may be deposited on the deposition object to form a thin film.
증착공간(100a)의 둘레에는 분사된 증착 원료의 분산, 유동 방향 등을 제어하는 유동모듈(110)이 배치될 수 있다. 유동모듈(110)은 증착공간(100a)의 둘레 원주 방향을 따라 배치되어 있으며 둘레의 상하 방향으로 간격을 두고 복수 배치될 수 있다. 유동모듈(110)의 개수는 증착공간(100a)의 부피에 따라 달라질 수 있다.A flow module 110 may be disposed around the deposition space 100a to control the dispersion and flow direction of the injected deposition raw material. The flow modules 110 are arranged along the circumferential direction of the deposition space 100a, and may be arranged in plural numbers at intervals in the vertical direction around the circumference. The number of flow modules 110 may vary depending on the volume of the deposition space 100a.
이와 같은 화학 기상 증착 챔버(100)의 세부적인 구성은 공지된 화학 기상 증착 장치의 반응 챔버와 동일하므로, 자세한 설명은 생략한다.Since the detailed configuration of the chemical vapor deposition chamber 100 is the same as the reaction chamber of a known chemical vapor deposition device, detailed description will be omitted.
화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치(400)는 캡슐부(410)와 거치부(420)를 포함하며 증착 원료를 화학 기상 증착 챔버(100)로 공급할 수 있다. 캡슐부(410)는 캡슐본체(411), 기판(413) 및 캡슐덮개(415)를 포함한다. 캡슐부(410)는 투습부재(414)를 더 포함할 수 있다. 캡슐부(410)에는 증착 원료의 물질이 액상 상태로 저장되어 있다.The deposition raw material unit supply device 400 to which the recipe for the chemical vapor deposition process is applied includes a capsule portion 410 and a mounting portion 420 and can supply deposition raw materials to the chemical vapor deposition chamber 100. The capsule portion 410 includes a capsule body 411, a substrate 413, and a capsule cover 415. The capsule portion 410 may further include a moisture permeable member 414. In the capsule unit 410, the deposition raw material is stored in a liquid state.
그러나, 증착 원료는 액상을 함유하고 있는 미디엄 재료와 함께 저장될 수 있다. 미디엄 재료는 스폰지형태의 다공성 기재, 액상이 일정하게 젖어 있는 흡습필름 따위일 수 있다.However, the deposition raw material may be stored together with the medium material containing the liquid phase. The medium material may be a sponge-shaped porous substrate or a moisture-absorbing film that is constantly wet with liquid.
캡슐본체(411)는 캡슐부(410)의 외형을 형성하며 내부에는 개방부를 가지며 증착 원료가 저장되는 저장공간(411a)이 형성되어 있다. 저장공간(411a)은 격벽(412)으로 구획되어 있다. 격벽(412)은 저장공간(411a)의 바닥에서 개방부까지 형성되어 있다. 캡슐본체(411)에서 개방부의 주변에는 외측 방향으로 돌출된 플랜지(도시하지 않음)가 형성될 수 있다.The capsule body 411 forms the outer shape of the capsule portion 410 and has an opening inside and a storage space 411a in which deposition raw materials are stored. The storage space 411a is partitioned by a partition wall 412. The partition 412 is formed from the bottom of the storage space 411a to the opening. A flange (not shown) protruding outward may be formed around the opening in the capsule body 411.
도면 도 2 및 도 3에서 격벽(412)은 2개이고, 구획된 저장공간(411a)은 3개로 도시하였다. 격벽(412)의 개수와 구획된 저장공간(411a)의 너비는 증착 대상물에 따라 달라질 수 있다. 격벽(412)은 등간격 또는 비등간격으로 배열될 수 있다. 격벽(412)들에 의해 구획된 각 저장공간(411a)들의 부피는 기능(발수, 친수, 방오, 방수, 항바이러스, 생체친화, 접합)을 갖는 물질들의 공급 비율에 따라 달라질 수 있다. 이에 물질들의 비율은 상이할 수 있다. 여기서 물질 중 반응에 참여하는 물질의 유량은 증착공간(100a)의 너비에 따라 증착 기능에 참여하는 물질의 0.2배 내지 100일 수 있다.In FIGS. 2 and 3, there are two partition walls 412 and three partitioned storage spaces 411a. The number of partition walls 412 and the width of the partitioned storage space 411a may vary depending on the deposition object. The partition walls 412 may be arranged at equal or unequal intervals. The volume of each storage space 411a partitioned by the partition walls 412 may vary depending on the supply ratio of materials with functions (water repellent, hydrophilic, antifouling, waterproof, antiviral, biocompatible, bonding). Accordingly, the ratio of substances may be different. Here, the flow rate of the material participating in the reaction may be 0.2 to 100 times that of the material participating in the deposition function depending on the width of the deposition space 100a.
구획된 저장공간(411a)들에는 물질들이 구획되어 액상 상태로 저장될 수 있다. 이에 물질들은 액상 상태에서 서로 혼합되지 않는다. 물질들의 기능은 증착 대상물의 표면에 형성되는 박막의 특성에 따라 달라질 수 있다. 또한 저장공간(411a)들에는 질소 등 불활성 기체가 충진될 수 있다.In the partitioned storage spaces 411a, substances can be partitioned and stored in a liquid state. Therefore, substances do not mix with each other in the liquid state. The functions of materials may vary depending on the characteristics of the thin film formed on the surface of the deposition object. Additionally, the storage spaces 411a may be filled with an inert gas such as nitrogen.
캡슐본체(411)는 금속, 플라스틱 따위로 만들어질 수 있으며, 격벽(412)은 폴리에틸렌(polyethylene; PE) 또는 내부식성의 금속으로 만들어질 수도 있다.The capsule body 411 may be made of metal, plastic, etc., and the partition wall 412 may be made of polyethylene (PE) or a corrosion-resistant metal.
기판(413)은 각 저장공간(411a)의 바닥을 형성한다. 그러나 저장공간(411a)의 바닥 일부분에 관통홀이 형성되고, 관통홀에 기판(413)이 배치될 수 있다. 기판(413)은 저장된 물질과 접하고 있다. 각 저장공간(411a)의 기판(413)들은 서로 떨어져 있다. 기판(413)은 열전도가 높은 금속 따위로 만들어질 수 있다.The substrate 413 forms the bottom of each storage space 411a. However, a through hole may be formed in a portion of the bottom of the storage space 411a, and the substrate 413 may be placed in the through hole. Substrate 413 is in contact with the stored material. The substrates 413 of each storage space 411a are spaced apart from each other. The substrate 413 may be made of a metal with high thermal conductivity.
투습부재(414)는 시트 형태로 형성되어 저장공간(411a)의 바닥과 개방부의 사이에 배치되어 있다. 물질들은 저장공간(411a)의 바닥과 투습부재(414)의 사이에 저장되어 있다. 물질들은 액상 상태이므로 투습부재(414)를 통과하지 못하며 기체는 투습부재(414)를 통과할 수 있다. 이에 캡슐부(410) 이송, 보관 시 물질들은 서로 혼합되지 않는다.The moisture permeable member 414 is formed in the form of a sheet and is disposed between the bottom and the opening of the storage space 411a. Materials are stored between the bottom of the storage space 411a and the moisture permeable member 414. Since substances are in a liquid state, they cannot pass through the moisture-permeable member 414, and gas can pass through the moisture-permeable member 414. Accordingly, when transporting and storing the capsule unit 410, the substances are not mixed with each other.
캡슐덮개(415)는 시트 형태로 형성되어 외력에 의해 찢길 수 있다. 캡슐덮개(415)는 캡슐본체(411)에 배치되어 가장자리가 개방부의 둘레를 따라 결합되어 있다. 캡슐덮개(415)는 격벽(412)과도 결합되어 있다. 이에 저장공간(411a)들은 완전하게 구획될 수 있다. 캡슐덮개(415)는 캡슐본체(411)에서 뜯길 수 있다.The capsule cover 415 is formed in a sheet shape and can be torn by external force. The capsule cover 415 is placed on the capsule body 411 and its edges are joined along the perimeter of the opening. The capsule cover 415 is also coupled to the partition wall 412. Accordingly, the storage spaces 411a can be completely partitioned. The capsule cover 415 may be torn from the capsule body 411.
거치부(420)는 거치하우징(421), 거치덮개(422) 및 기화부(423)를 포함할 수 있다. 거치부(420)는 니들(424)을 더 포함할 수 있다. 거치부(420)는 캡슐부(410)의 증착 원료가 화학 기상 증착 챔버(100)로 공급될 수 있도록 기화시킨다.The mounting portion 420 may include a mounting housing 421, a mounting cover 422, and a vaporizing portion 423. The mounting portion 420 may further include a needle 424. The mounting portion 420 vaporizes the deposition raw material of the capsule portion 410 so that it can be supplied to the chemical vapor deposition chamber 100.
거치하우징(421)에는 개방부를 가지는 캡슐공간(421a)이 형성되어 있다. 캡슐부(410)는 개방부를 통해 캡슐공간(421a)으로 투입될 수 있다. 거치하우징(421)의 개방부 주변에는 캡슐본체(411)의 플랜지가 놓이는 안착홈(도시하지 않음)이 형성될 수 있다.A capsule space 421a having an opening is formed in the mounting housing 421. The capsule portion 410 may be introduced into the capsule space 421a through the opening. A seating groove (not shown) in which the flange of the capsule body 411 is placed may be formed around the opening of the mounting housing 421.
기화부(423)는 제어부(도시하지 않음)와 전기적으로 연결되어 있으며 캡슐공간(421a)의 바닥에 배치되어 있다. 기화부(423)는 기판(413)과 동일한 개수로 배치되어 있으며 구획되어 있다. 기화부(423)는 가열판을 포함한다. 가열판은 열전소자일 수 있다. 기화부(423)의 가열판은 물질들이 기화되도록 기 설정된 온도의 열을 기판(413)에 전달한다.The vaporization unit 423 is electrically connected to a control unit (not shown) and is disposed at the bottom of the capsule space 421a. The vaporization units 423 are arranged in the same number as the substrate 413 and are partitioned. The vaporization unit 423 includes a heating plate. The heating plate may be a thermoelectric element. The heating plate of the vaporization unit 423 transfers heat at a preset temperature to the substrate 413 so that the materials are vaporized.
기화부(423)는 초음파 진동자를 포함할 수 있다. 초음파 진동자는 기판(413)에 초음파를 가해 물질을 안개 입자로 만든다. 기화부(423)들의 온도, 초음파 주파수는 물질들의 공급비율에 따라 독립적으로 제어될 수 있다.The vaporization unit 423 may include an ultrasonic vibrator. The ultrasonic vibrator applies ultrasonic waves to the substrate 413 to turn the material into fog particles. The temperature and ultrasonic frequency of the vaporization units 423 can be independently controlled depending on the supply ratio of the materials.
거치덮개(422)는 화학 기상 증착 챔버(100)와 유로부(300)로 연결되어 있다. 거치덮개(422)는 거치하우징(421)에 결합되어 개방부를 덮고 있다. 거치덮개(422)와 거치하우징(421)은 클램프, 볼트 따위의 결합수단으로 고정될 수 있다.The mounting cover 422 is connected to the chemical vapor deposition chamber 100 and the flow path portion 300. The mounting cover 422 is coupled to the mounting housing 421 and covers the opening portion. The mounting cover 422 and the mounting housing 421 can be fixed with a coupling means such as a clamp or bolt.
거치덮개(422)의 일부분은 안착홈에 놓인 캡슐본체(411)의 플랜지를 누를 수 있다. 이에 캡슐부(410)는 캡슐공간(421a)에서 안정적으로 고정되며 기판(413)들은 기화부(423)들에 안정적으로 접할 수 있다.A portion of the mounting cover 422 can press the flange of the capsule body 411 placed in the seating groove. Accordingly, the capsule portion 410 is stably fixed in the capsule space 421a, and the substrates 413 can stably contact the vaporization portions 423.
니들(424)은 거치덮개(422)의 내측에 간격을 두고 복수 배치되어 있다. 니들(424)들은 캡슐공간(421a)의 바닥 방향으로 돌출되어 있다. 니들(424)은 유로부(300)의 유동유로와 연결되어 있다.A plurality of needles 424 are arranged at intervals on the inside of the mounting cover 422. Needles 424 protrude toward the bottom of the capsule space 421a. The needle 424 is connected to the flow path of the flow path portion 300.
캡슐부(410)가 캡슐공간(421a)에 고정된 상태에서 캡슐공간(421a)에 진공압을 형성하면 캡슐덮개(415)는 볼록해질 수 있으며 이때 니들(424)은 캡슐덮개(415)를 뚫으면서 저장공간(411a)으로 삽입될 수 있다. 그러나 거치덮개(422)가 거치하우징(421)과 결합될 때 니들(424)의 단부가 캡슐덮개(415)를 뚫고 저장공간(411a)으로 삽입될 수 있다.When vacuum pressure is created in the capsule space 421a while the capsule part 410 is fixed in the capsule space 421a, the capsule cover 415 may become convex, and at this time, the needle 424 pierces the capsule cover 415. It can be inserted into the storage space 411a while doing so. However, when the mounting cover 422 is combined with the mounting housing 421, the end of the needle 424 may penetrate the capsule cover 415 and be inserted into the storage space (411a).
한편, 거치덮개(422)에는 니들(424)과 연결된 승강유닛(도시하지 않음)이 배치될 수 있다. 승강유닛의 구동으로 니들(424)은 하강하여 캡슐덮개(415)를 뚫을 수 있다.Meanwhile, a lifting unit (not shown) connected to the needle 424 may be disposed on the mounting cover 422. By driving the lifting unit, the needle 424 can descend and pierce the capsule cover 415.
각 저장공간(411a)에서 기화된 물질들은 기체 상태로 투습부재(414)를 투과하여 유로부(300)를 통해 화학 기상 증착 챔버(100)로 공급될 수 있다.Materials vaporized in each storage space 411a may pass through the moisture permeable member 414 in a gaseous state and be supplied to the chemical vapor deposition chamber 100 through the flow path portion 300.
다음은 위에서 설명한 화학 기상 증착 장치의 작용에 대하여 설명한다.Next, the operation of the chemical vapor deposition device described above will be explained.
증착 대상물을 화학 기상 증착 챔버(100)로 투입하며, 캡슐부(410)에는 증착 대상물에 따른 물질들이 기능에 따라 구분되어 독립적으로 각 저장공간(411a)에 액상 상태로 공급비율에 따라 저장되어 있다.The deposition object is introduced into the chemical vapor deposition chamber 100, and in the capsule unit 410, materials according to the deposition object are classified according to function and are independently stored in liquid state in each storage space 411a according to the supply ratio. .
캡슐부(410)를 캡슐공간(421a)에 투입한 후 캡슐덮개(415)와 캡슐본체(411)를 결합하면 니들(424)은 캡슐덮개(415)를 뚫고 저장공간(411a)으로 삽입된다. 이때 캡슐공간(421a)이 진공환경이 조성되면서 캡슐덮개(415)가 볼록해지면서 니들(424)이 캡슐덮개(415)를 뚫을 수 있다.After inserting the capsule unit 410 into the capsule space 421a and combining the capsule cover 415 and the capsule body 411, the needle 424 penetrates the capsule cover 415 and is inserted into the storage space 411a. At this time, as a vacuum environment is created in the capsule space 421a, the capsule cover 415 becomes convex, allowing the needle 424 to pierce the capsule cover 415.
가열판의 기화부(423)들은 물질들의 공급 비율에 따라 기 설정된 열을 발생시키며, 기화부(423)와 접한 기판(413)들은 물질을 가열하게 된다. 물질들은 기화되어 투습부재를 투과하여 니들(424)로 유입될 수 있다. 그리고 추가로 가해지는 열에 의해 기화된 기체 상태의 물질들은 유로부(300)의 유동유로를 유동하면서 혼합되어 분사모듈(200)을 통해 증착공간(100a)으로 공급될 수 있다.The vaporization units 423 of the heating plate generate preset heat according to the supply ratio of the materials, and the substrates 413 in contact with the vaporization units 423 heat the materials. Materials may be vaporized and flow through the moisture permeable member into the needle 424. And the gaseous materials vaporized by additionally applied heat may be mixed while flowing in the flow path of the flow path portion 300 and supplied to the deposition space 100a through the injection module 200.
따라서, 캡슐부(410)가 물질들의 공급량의 비율이 반영된 상태로 제작되므로 물질들을 균일한 양으로 화학 기상 증착 챔버에 공급할 수 있다. 이에 물질들이 비율에 맞게 화학 기상 증착 챔버로 공급되어 증착 대상물에 증착되므로 물질들의 비율 차이에 의한 증착 불량이 발생하지 않는다.Therefore, since the capsule unit 410 is manufactured in a state that reflects the ratio of the supply amount of materials, materials can be supplied to the chemical vapor deposition chamber in a uniform amount. Accordingly, the materials are supplied to the chemical vapor deposition chamber in proportion and deposited on the deposition object, so deposition defects due to differences in the proportions of the materials do not occur.
이상에서 본 발명의 바람직한 실시예에 대하여 상세하게 설명하였지만 본 발명의 권리범위는 이에 한정되는 것은 아니고 다음의 청구범위에서 정의하고 있는 본 발명의 기본 개념을 이용한 당업자의 여러 변형 및 개량 형태 또한 본 발명의 권리범위에 속하는 것이다.Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the following claims are also possible. falls within the scope of rights.

Claims (8)

  1. 증착 원료와 기체가 수용될 수 있는 내부공간이 적어도 하나의 격벽으로 분할되어 있는 캡슐본체,A capsule body in which the internal space that can accommodate deposition raw materials and gas is divided by at least one partition,
    상기 캡슐본체의 개방부를 덮고 있는 캡슐덮개 및A capsule cover covering the opening of the capsule body and
    분할된 상기 내부공간에 각각 배치된 복수의 기판A plurality of substrates each disposed in the divided internal space
    을 포함하는 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치.A deposition raw material unit supply device to which a recipe for a chemical vapor deposition process is applied, including.
  2. 제1항에서,In paragraph 1:
    상기 캡슐본체의 내부에 배치되어 있고 액상은 차단되고 기체는 투과될 수 있는 투습부재A moisture permeable member disposed inside the capsule body and capable of blocking liquid and allowing gas to pass through.
    를 더 포함하는 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치.A deposition raw material unit supply device to which a recipe for a chemical vapor deposition process is applied, further comprising:
  3. 제1항에서,In paragraph 1:
    상기 캡슐본체가 수용되는 거치공간이 형성되어 있는 거치하우징,A holding housing formed with a holding space in which the capsule body is accommodated,
    상기 거치하우징의 투입홀을 덮고 있으며 유로부가 연결되어 있는 거치덮개 및A mounting cover covering the input hole of the mounting housing and connected to the flow path portion, and
    상기 거치공간의 바닥에 배치되어 있고 상기 복수의 기판과 각각 접속될 수 있는 복수의 기화부A plurality of vaporizing units disposed on the bottom of the holding space and each capable of being connected to the plurality of substrates
    를 더 포함하며,It further includes,
    상기 복수의 기화부는 독립적으로 제어될 수 있고, 상기 증착 원료는 상기 복수의 기화부에 의해 기화되어 상기 유로부로 유입되어 유동하는The plurality of vaporization units may be independently controlled, and the deposition raw material is vaporized by the plurality of vaporization units and flows into the flow path portion.
    화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치.A deposition raw material unit supply device with a recipe for the chemical vapor deposition process.
  4. 제3항에서In paragraph 3
    상기 거치덮개에 배치되어 상기 유로부와 연결되어 있으며 상기 캡슐덮개를 타공할 수 있는 복수의 니들A plurality of needles disposed on the mounting cover and connected to the flow path portion and capable of perforating the capsule cover
    을 더 포함하는containing more
    화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치.A deposition raw material unit supply device with a recipe for the chemical vapor deposition process.
  5. 제4항에서,In paragraph 4,
    상기 캡슐덮개는 상기 니들이 관통할 수 있는 필름이고, 상기 캡슐덮개는 상기 캡슐본체에서 벗겨질 수 있는 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치.The capsule cover is a film through which the needle can penetrate, and the capsule cover is a deposition raw material unit supply device to which a recipe for a chemical vapor deposition process can be peeled off from the capsule body.
  6. 제3항에서,In paragraph 3,
    상기 복수의 기판은 금속재이고,The plurality of substrates are made of metal,
    상기 복수의 기화부는 발열체 또는 초음파 진동자인 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치.A deposition raw material unit supply device to which a recipe for a chemical vapor deposition process is applied, wherein the plurality of vaporization units are heating elements or ultrasonic vibrators.
  7. 제1항에서,In paragraph 1:
    상기 캡슐본체는 금속 또는 플라스틱일 수 있고, 상기 격벽은 폴리프로필렌(polypropylene; PE)인 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치.The capsule body may be metal or plastic, and the partition wall may be polypropylene (PE). A deposition raw material unit supply device to which a recipe for a chemical vapor deposition process is applied.
  8. 제1항 내지 제7항 중 선택된 어느 한 항에 정의되어 있는 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치, 그리고A deposition raw material unit supply device to which the recipe for the chemical vapor deposition process defined in any one of claims 1 to 7 is applied, and
    유로부를 통해 상기 화학기상증착 공정을 위한 레시피가 적용된 증착 원료 단위 공급 장치와 연결되어 있고 내부에 증착 대상물이 위치하는 증착공간이 형성된 화학 기상 증착 챔버A chemical vapor deposition chamber connected to a deposition raw material unit supply device to which the recipe for the chemical vapor deposition process is applied through a flow path, and forming a deposition space within which the deposition object is located.
    를 포함하는 화학 기상 증착 장치.A chemical vapor deposition device comprising:
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JP2021190487A (en) * 2020-05-27 2021-12-13 大陽日酸株式会社 Solid material supply device

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