WO2024106477A1

WO2024106477A1 - Electrochemical cell device, module, and module accommodating device

Info

Publication number: WO2024106477A1
Application number: PCT/JP2023/041126
Authority: WO
Inventors: 和也今仲
Original assignee: 京セラ株式会社
Priority date: 2022-11-15
Filing date: 2023-11-15
Publication date: 2024-05-23

Abstract

This electrochemical cell device comprises a plurality of element parts and conductive members. The plurality of element parts are arranged side by side in a first direction. The conductive members are respectively positioned between the element parts adjacent to each other in the first direction. A first member is positioned in a first region positioned at a central section in the first direction. A second member is positioned in a second region positioned at an end section in the first direction. The first member has a first portion and a second portion which has a different infrared light reflectance from the first portion. The second member has a lower infrared light reflectance than the first portion.

Description

Electrochemical cell device, module and module housing device

This disclosure relates to electrochemical cell devices, modules, and module housing devices.

In recent years, various fuel cell stack devices containing multiple fuel cell cells have been proposed as next-generation energy sources. A fuel cell is a type of electrochemical cell that can generate electricity using a fuel gas such as a hydrogen-containing gas and an oxygen-containing gas such as air.

JP 2021-180164 A JP 2015-220022 A

The electrochemical cell device according to one aspect of the embodiment includes a plurality of element parts and a conductive member. The plurality of element parts are aligned in a first direction. The conductive members are respectively positioned between the element parts adjacent to each other in the first direction. A first member is positioned in a first region positioned in the center of the first direction. A second member is positioned in a second region positioned at an end of the first direction. The first member has a first portion and a second portion having a different reflectance of infrared light from the first portion. The second member has a lower reflectance of infrared light than the first portion.

An electrochemical cell device according to one aspect of the embodiment includes a plurality of element parts and a conductive member. The plurality of element parts are arranged in a first direction. The conductive members are respectively positioned between the element parts adjacent to each other in the first direction. A first member and a second member having a different infrared light reflectance from the first member are positioned in a first region positioned at the center in the first direction. A third member is positioned in a second region positioned at an end in the first direction. The third member has a lower infrared light reflectance than the first member.

The module of the present disclosure also includes the electrochemical cell device described above and a storage container for storing the electrochemical cell device.

The module housing device of the present disclosure also includes the module described above, an auxiliary device for operating the module, and an exterior case that houses the module and the auxiliary device.

FIG. 1A is a cross-sectional view illustrating an example of an electrochemical cell according to a first embodiment. FIG. 1B is a side view of an example of the electrochemical cell according to the first embodiment, as viewed from the air electrode side. FIG. 1C is a side view of an example of an electrochemical cell according to the first embodiment, viewed from the interconnector side. FIG. 2A is a perspective view showing an example of an electrochemical cell device according to the first embodiment. FIG. 2B is a cross-sectional view taken along line XX shown in FIG. 2A. FIG. 2C is a top view illustrating an example of the electrochemical cell device according to the first embodiment. FIG. 3 is a cross-sectional view showing an example of the temperature distribution in an electrochemical cell device. FIG. 4 is an enlarged cross-sectional view of the electrochemical cell device according to the first embodiment. FIG. 5A is a cross-sectional view illustrating an example of the conductive member according to the first embodiment. FIG. 5B is a cross-sectional view taken along line AA shown in FIG. 5A. FIG. 6A is a cross-sectional view illustrating an example of a conductive member located in a first region. FIG. 6B is a cross-sectional view illustrating an example of a conductive member located in a second region. FIG. 7 is a cross-sectional view illustrating an example of an electrochemical cell according to the first embodiment. FIG. 8 is an external perspective view illustrating an example of the module according to the first embodiment. FIG. 9 is an exploded perspective view illustrating an example of a module housing device according to the first embodiment. FIG. 10 is a cross-sectional view showing another example of the electrochemical cell device according to the first embodiment. FIG. 11 is a perspective view showing an example of an electrochemical cell device according to the second embodiment. FIG. 12 is a cross-sectional view showing an example of the temperature distribution in a flat electrochemical cell device. FIG. 13 is a cross-sectional view showing an example of an electrochemical cell device according to the second embodiment. FIG. 14 is a cross-sectional view showing an example of the first region R1 shown in FIG. FIG. 15 is a cross-sectional view showing another example of the electrochemical cell device according to the second embodiment. FIG. 16A is a cross-sectional view showing an example of an electrochemical cell constituting the electrochemical cell device according to the third embodiment. FIG. 16B is a cross-sectional view showing another example of the electrochemical cell according to the third embodiment. FIG. 16C is a cross-sectional view showing another example of the electrochemical cell according to the third embodiment.

　In conventional fuel cell stack devices, for example, there could be variations in temperature during power generation, and there was room for improvement in durability.

Therefore, there is a need to provide highly durable electrochemical cell devices, modules, and module housing devices.

Below, embodiments of the electrochemical cell device, module, and module housing device disclosed in the present application will be described in detail with reference to the attached drawings. Note that this disclosure is not limited to the embodiments shown below.

It should also be noted that the drawings are schematic, and that the dimensional relationships and ratios of each element may differ from reality. Furthermore, there may be parts in which the dimensional relationships and ratios of each element differ between the drawings.

[First embodiment]
<Electrochemical cell>
First, with reference to Figures 1A to 1C, an electrochemical cell constituting an electrochemical cell device according to a first embodiment will be described using an example of a solid oxide fuel cell. The electrochemical cell device may include a cell stack having a plurality of electrochemical cells. An electrochemical cell device having a plurality of electrochemical cells will be simply referred to as a cell stack device.

FIG. 1A is a cross-sectional view showing an example of an electrochemical cell according to an embodiment. FIG. 1B is a side view of an example of an electrochemical cell according to an embodiment, viewed from the air electrode side. FIG. 1C is a side view of an example of an electrochemical cell according to an embodiment, viewed from the interconnector side. Note that FIGS. 1A to 1C show enlarged views of a portion of each component of the electrochemical cell. Hereinafter, the electrochemical cell may also be simply referred to as a cell.

In the example shown in Figures 1A to 1C, cell 1 is a hollow flat plate-like elongated plate. As shown in Figure 1B, the shape of cell 1 as a whole viewed from the side is, for example, a rectangle with a side length in the length direction L of 5 cm to 50 cm and a length in the width direction W perpendicular to the length direction L of, for example, 1 cm to 10 cm. The overall thickness of cell 1 in the thickness direction T is, for example, 1 mm to 5 mm.

As shown in FIG. 1A, the cell 1 includes a conductive support substrate 2, an element section 3, and an interconnector 4. The support substrate 2 is columnar and has a pair of opposing flat surfaces n1, n2, and a pair of arc-shaped side surfaces m that connect the flat surfaces n1, n2.

The element section 3 is provided on the flat surface n1 of the support substrate 2. The element section 3 has a fuel electrode layer 5, a solid electrolyte layer 6, and an air electrode layer 8. In the example shown in FIG. 1A, the interconnector 4 is located on the flat surface n2 of the cell 1. The cell 1 may also have an intermediate layer 7 between the solid electrolyte layer 6 and the air electrode layer 8.

Also, as shown in FIG. 1B, the air electrode layer 8 does not extend to the lower end of the cell 1. At the lower end of the cell 1, only the solid electrolyte layer 6 is exposed on the surface of the flat surface n1. Also, as shown in FIG. 1C, the interconnector 4 may extend to the lower end of the cell 1. At the lower end of the cell 1, the interconnector 4 and the solid electrolyte layer 6 are exposed on the surface. Note that, as shown in FIG. 1A, the solid electrolyte layer 6 is exposed on the surface of a pair of arc-shaped side surfaces m of the cell 1. The interconnector 4 does not have to extend to the lower end of the cell 1.

The components that make up Cell 1 are explained below.

The support substrate 2 has gas flow paths 2a therein through which gas flows. The example of the support substrate 2 shown in FIG. 1A has six gas flow paths 2a. The support substrate 2 has gas permeability, and allows the fuel gas flowing through the gas flow paths 2a to pass through to the fuel electrode layer 5. The support substrate 2 may be conductive. The conductive support substrate 2 collects electricity generated in the element section 3 to the interconnector 4.

The material of the support substrate 2 includes, for example, an iron group metal component and an inorganic oxide. The iron group metal component may be, for example, Ni (nickel) and/or NiO. The inorganic oxide may be, for example, a specific rare earth element oxide. The rare earth element oxide may include, for example, one or more rare earth elements selected from Sc, Y, La, Nd, Sm, Gd, Dy, and Yb.

The material of the fuel electrode layer 5 may be a generally known material. The fuel electrode layer 5 may be made of a porous conductive ceramic, such as a ceramic containing calcium oxide, magnesium oxide, or ZrO ₂ in which a rare earth element oxide is dissolved, and Ni and/or NiO. The rare earth element oxide may contain a plurality of rare earth elements selected from Sc, Y, La, Nd, Sm, Gd, Dy, and Yb. Calcium oxide, magnesium oxide, or ZrO ₂ in which a rare earth element oxide is dissolved may be referred to as stabilized zirconia. The stabilized zirconia may also include partially stabilized zirconia.

The solid electrolyte layer 6 is an electrolyte and transfers ions between the fuel electrode layer 5 and the air electrode layer 8. At the same time, the solid electrolyte layer 6 has gas barrier properties, making it difficult for leakage of fuel gas and oxygen-containing gas to occur.

The material of the solid electrolyte layer 6 may be, for example, _ZrO2 in which 3 mol% to 15 mol% of rare earth element oxide, calcium oxide, or magnesium oxide is dissolved. The rare earth element oxide may include, for example, one or more rare earth elements selected from Sc, Y, La, Nd, Sm, Gd, Dy, and Yb. The solid electrolyte layer 6 may include, for example, _CeO2 in which La, Nd, Sm, Gd, or Yb is dissolved, _BaZrO3 in which Sc or Yb is dissolved, or _BaCeO3 in which Sc or Yb is dissolved.

The air electrode layer 8 is gas permeable. The open porosity of the air electrode layer 8 may be in the range of, for example, 20% to 50%, particularly 30% to 50%.

There are no particular limitations on the material of the air electrode layer 8 as long as it is a material generally used for air electrodes. The material of the air electrode layer 8 may be, for example, a conductive ceramic such as a so-called _ABO3 -type perovskite oxide.

The material of the air electrode layer 8 may be, for example, a composite oxide in which Sr (strontium ₎ and La ( _lanthanum ) coexist at the A site. Examples of such composite oxides include _LaxSr1 _{-xCoyFe1-yO3, LaxSr1-xMnO3} _, _LaxSr1 _- _xFeO3 _, _and _LaxSr1 _- _xCoO3 _, where x is 0<x<1 and y is 0<y<1.

Furthermore, when the element section 3 has the intermediate layer 7, the intermediate layer 7 functions as a diffusion suppression layer. When elements such as Sr (strontium) contained in the air electrode layer 8 diffuse into the solid electrolyte layer 6, a resistive layer such as _SrZrO3 is formed in the solid electrolyte layer 6. The intermediate layer 7 makes it difficult for Sr to diffuse, thereby making it difficult for _SrZrO3 and other oxides having electrical insulation to be formed.

The material of the intermediate layer 7 is not particularly limited as long as it generally prevents diffusion of elements between the air electrode layer 8 and the solid electrolyte layer 6. The material of the intermediate layer 7 may contain, for example, cerium oxide (CeO ₂ ) in which a rare earth element other than Ce (cerium) is dissolved. Examples of such rare earth elements include Gd (gadolinium) and Sm (samarium).

The interconnector 4 is dense, which makes it difficult for the fuel gas flowing through the gas flow passage 2a located inside the support substrate 2 and the oxygen-containing gas flowing outside the support substrate 2 to leak. The interconnector 4 may have a relative density of 93% or more, particularly 95% or more.

The material of the interconnector 4 may be a lanthanum chromite-based perovskite oxide ( _LaCrO3 -based oxide), a lanthanum strontium titanium-based perovskite oxide ( _LaSrTiO3 -based oxide), or the like. These materials are conductive and are not easily reduced or oxidized even when in contact with a fuel gas such as a hydrogen-containing gas and an oxygen-containing gas such as air. The material of the interconnector 4 may be a metal or an alloy. Details of the electrochemical cell according to this embodiment will be described later.

<Electrochemical cell device>
Next, an electrochemical cell device according to the present embodiment using the above-mentioned cell 1 will be described with reference to Figures 2A to 2C. Figure 2A is a perspective view showing an example of the electrochemical cell device according to the first embodiment. Figure 2B is a cross-sectional view taken along line XX shown in Figure 2A. Figure 2C is a top view showing an example of the electrochemical cell device according to the first embodiment.

As shown in FIG. 2A, the cell stack device 10 includes a cell stack 11 having a plurality of cells 1 arranged (stacked) in the thickness direction T of the cells 1 (see FIG. 1A), and a fixing member 12.

The fixing member 12 has a fixing material 13 and a support member 14. The support member 14 supports the cell 1. The fixing material 13 fixes the cell 1 to the support member 14. The support member 14 also has a support 15 and a gas tank 16. The support member 14, which is made of a metal, has electrical conductivity.

As shown in FIG. 2B, the support 15 has insertion holes 15a into which the lower ends of the multiple cells 1 are inserted. The lower ends of the multiple cells 1 and the inner wall of the insertion holes 15a are joined with a fixing material 13.

The gas tank 16 has an opening for supplying reactive gas to the multiple cells 1 through the insertion holes 15a, and a groove 16a located around the opening. The outer peripheral edge of the support 15 is joined to the gas tank 16 by a bonding material 21 filled in the groove 16a of the gas tank 16.

In the example shown in FIG. 2A, fuel gas is stored in an internal space 22 formed by a support body 15, which is the support member 14, and a gas tank 16. A gas circulation pipe 20 is connected to the gas tank 16. The fuel gas is supplied to the gas tank 16 through this gas circulation pipe 20, and is supplied from the gas tank 16 to a gas flow path 2a (see FIG. 1A) inside the cell 1. The fuel gas supplied to the gas tank 16 is generated in a reformer 102 (see FIG. 8), which will be described later.

Hydrogen-rich fuel gas can be produced by, for example, steam reforming the raw fuel. When fuel gas is produced by steam reforming, the fuel gas contains water vapor.

The example shown in FIG. 2A includes two rows of cell stacks 11, a support member 14, two supports 15, and a gas tank 16. Each of the two rows of cell stacks 11 has a plurality of cells 1. Each cell stack 11 is fixed to each support 15. The gas tank 16 has two through holes on the upper surface. Each support 15 is disposed in each through hole. The internal space 22 is formed by one gas tank 16 and two supports 15. Although FIG. 2A shows a cell stack device 10 having two rows of cell stacks 11, the electrochemical cell device may have one row of cell stacks 11 or three or more rows of cell stacks 11.

The shape of the insertion hole 15a is, for example, an oval shape when viewed from above. For example, the length of the insertion hole 15a in the arrangement direction of the cells 1, i.e., the thickness direction T, is greater than the distance between the two end current collecting members 17 located at both ends of the cell stack 11. The width of the insertion hole 15a is, for example, greater than the length of the cell 1 in the width direction W (see FIG. 1A).

As shown in FIG. 2B, the joint between the inner wall of the insertion hole 15a and the lower end of the cell 1 is filled with a fixing material 13 and solidified. This bonds and fixes the inner wall of the insertion hole 15a to the lower ends of the multiple cells 1, and also bonds and fixes the lower ends of the cells 1 to each other. The gas flow path 2a of each cell 1 communicates with the internal space 22 of the support member 14 at its lower end.

The fixing material 13 and the bonding material 21 may be made of a material with low electrical conductivity, such as glass. Specific materials for the fixing material 13 and the bonding material 21 may include amorphous glass, and in particular, crystallized glass.

As the crystallized glass, for example, any of SiO ₂ -CaO based, MgO-B ₂ O ₃ based, La ₂ O _{3 -B} ₂ O ₃ -MgO based, La ₂ O ₃ -B ₂ O ₃ -ZnO based, SiO ₂ -CaO-ZnO based materials may be used, and in particular, SiO ₂ -MgO based materials may be used.

Also, as shown in FIG. 2B, a conductive member 18 is interposed between adjacent cells 1 among the multiple cells 1. The conductive member 18 electrically connects the fuel electrode layer 5 of one adjacent cell 1 to the air electrode layer 8 of the other cell 1 in series. More specifically, the conductive member 18 connects the interconnector 4 electrically connected to the fuel electrode layer 5 of one adjacent cell 1 to the air electrode layer 8 of the other cell 1. When the interconnector 4 is a metal or alloy, the interconnector 4 and the conductive member 18 may be integrated, or the conductive member 18 may also function as the interconnector 4. Details of the conductive member 18 will be described later.

As shown in FIG. 2B, an end current collecting member 17 is electrically connected to the cell 1 located on the outermost side in the arrangement direction of the multiple cells 1. The end current collecting member 17 is connected to a conductive part 19 that protrudes to the outside of the cell stack 11. The conductive part 19 collects electricity generated by power generation in the cell 1 and draws it out to the outside. Note that the end current collecting member 17 is not shown in FIG. 2A.

As shown in FIG. 2C, the cell stack device 10 has two

cell stacks

11A and 11B connected in series and functions as a single battery. Therefore, the conductive parts 19 of the cell stack device 10 are divided into a positive terminal 19A, a negative terminal 19B, and a connection terminal 19C.

The positive terminal 19A is the positive electrode when the power generated by the cell stack 11 is output to the outside, and is electrically connected to the positive end current collector 17 of the cell stack 11A. The negative terminal 19B is the negative electrode when the power generated by the cell stack 11 is output to the outside, and is electrically connected to the negative end current collector 17 of the cell stack 11B.

The connection terminal 19C electrically connects the end current collecting member 17 on the negative electrode side of the cell stack 11A to the end current collecting member 17 on the positive electrode side of the cell stack 11B.

(Temperature distribution during power generation)
Next, the temperature distribution during power generation in the electrochemical cell device will be described with reference to FIG. 3. FIG. 3 is a cross-sectional view showing an example of the temperature distribution in the electrochemical cell device. The cell stack device 10X shown in FIG. 3 corresponds to an enlarged view of a part of the cell stack 11 included in the cell stack device 10 shown in FIG. 2B. Note that, for example, the cells 1, the conductive members 18, etc. are illustrated in a simplified form in FIG. 3. Also, in other drawings described later, the components may be illustrated in a simplified form. For ease of explanation, the number of cells 1 included in the cell stack device is illustrated as 8 in FIG. 3 and FIG. 4 described later.

As shown in FIG. 3, between adjacent cells 1 in the thickness direction T of the cells 1, conductive members 18 extending in the length direction L are located, electrically connecting the adjacent cells 1 to each other. In the cell stack device 10X, during power generation, temperatures t1 to t6 are located in the center of the thickness direction T (first direction) of the cells 1 in the order of t1>t2>t3>t4>t5>t6, and the upper end side of the length direction L away from the fixing material 13 is likely to become high temperature. In addition, the temperature during power generation is likely to decrease toward the end side of the thickness direction T away from such a portion and the lower end side of the length direction L. For this reason, the first region R1 located in the center of the thickness direction T (first direction) of the cells 1 may become higher in temperature than the second region R2 located at both ends of the thickness direction T (first direction) of the cells 1, for example, and durability may be easily reduced.

Therefore, in this embodiment, a conductive member 18 and/or a cell 1 with different infrared light reflectances are applied between the first region R1 and the second region R2.

<Conductive member>
4 is an enlarged cross-sectional view of the electrochemical cell device according to the first embodiment. As shown in FIG. 4, the conductive member 18 as the first member located in the first region R1 has a first portion 181 and a second portion 182. The first portion 181 is located at the upper end side of the first region R1 in the length direction L, which is likely to become hot during power generation. The second portion 182 is located at the lower end side of the first region R1 in the length direction L, which is less likely to become hot than the first portion 181. The first portion 181 has a higher reflectance of infrared light than the second portion 182.

As a result, the amount of heat absorbed by the conductive member 18 is reduced in the first portion 181 compared to the second portion 182, and the temperature rise of the conductive member 18 can be reduced. This makes it less likely that the durability of the conductive member 18 will decrease due to overheating.

On the other hand, in the second portion 182, the amount of heat absorbed by the conductive member 18 is greater than in the first portion 181, accelerating the rise in temperature of the conductive member 18. This makes it less likely that a decrease in power generation performance due to insufficient heating of the cell stack device 10 will occur.

In addition, the conductive member 183 as the second member located in the second region R2 has a lower reflectance of infrared light than the first portion 181. As a result, in the second region R2, which is less likely to become hot compared to the first region R1, the heat absorbed by the conductive member 183 can promote a temperature rise. This reduces temperature variation during power generation, improving the power generation performance of the cell stack device 10.

The conductive member 183 may have a smaller reflectance of infrared light overall than the first portion 181. The conductive member 183 may have a larger or smaller reflectance of infrared light than the second portion 182. The conductive member 183 may have the same reflectance of infrared light as the second portion 182. The conductive member 183 may have a portion with a different reflectance of infrared light. When the conductive member 183 has a portion with a different reflectance of infrared light, the difference in the reflectance of infrared light between the portion with high reflectance of infrared light (hereinafter referred to as the "high reflectance portion") and the portion with low reflectance of infrared light (hereinafter referred to as the "low reflectance portion") may be smaller than the difference in the reflectance of infrared light between the first portion 181 and the second portion 182. The highly reflective portion of the conductive member 183 may have the same reflectance of infrared light as the first portion 181, or may have a smaller reflectance than the first portion 181. The conductive member 183 may have a generally uniform reflectance of infrared light overall.

Here, the reflectance of infrared light in the first portion 181 can be, for example, 8% or more and 50% or less. The reflectance of infrared light in the second portion 182 can be, for example, 3% or more and 35% or less. The reflectance of infrared light in the conductive member 183 can be, for example, 3% or more and 35% or less. Such reflectance of infrared light can be measured by a near-infrared/infrared spectrophotometer or a Fourier transform infrared spectrophotometer (FTIR). Infrared light refers to light having a wavelength of 700 nm or more. When comparing the reflectance of infrared light, for example, the average reflectance in the wavelength range of 1500 nm to 2500 nm can be compared. The reflectance of infrared light here refers to the average reflectance in the wavelength range of 1500 nm to 2500 nm.

Here, an example of a specific configuration of the conductive member 18 will be described with reference to Figures 5A and 5B. Figure 5A is a cross-sectional view showing an example of a conductive member according to the first embodiment.

As shown in FIG. 5A, the conductive member 18 has a connection portion 18a that is connected to cell 1A, one of the adjacent cells 1, and a connection portion 18b that is connected to cell 1B, the other cell 1. The conductive member 18 also has connecting portions 18c at both ends in the width direction W, which connect the

connection portions

18a and 18b. This allows the conductive member 18 to electrically connect the cells 1 adjacent to each other in the thickness direction T.

In addition, the

connection parts

18a and 18b have contact parts 18a1 and 18b1 that are in contact with the

cells

1A and 1B, and non-contact parts 18a2 and 18b2 that are not in contact with the

cells

1A and 1B.

FIG. 5B is a cross-sectional view taken along line A-A in FIG. 5A. The conductive member 18 extends in the longitudinal direction L of the cell 1. The conductive member 18 has a comb-like shape in cross-section, and the

connection portions

18a and 18b extend alternately from the connecting portion 18c toward the

cells

1A and 1B.

Next, the conductive members 18 located in the first region R1 and the second region R2 will be described in detail with reference to Figures 6A and 6B. Figure 6A is a cross-sectional view showing an example of a conductive member located in the first region. Figure 6B is a cross-sectional view showing an example of a conductive member located in the second region.

As shown in Figures 6A and 6B, the conductive member 18 may have a substrate 180 and a coating 30 covering the substrate 180. The substrate 180 is conductive and heat resistant. The substrate 180 contains chromium. The substrate 180 is, for example, stainless steel. The substrate 180 may contain, for example, a metal oxide.

The coating 30 may have insulating properties or low insulating properties. The coating 30 may contain, for example, chromium oxide (Cr ₂ O ₃ ), aluminum oxide (Al ₂ O ₃ ), metal oxides containing Al and/or Si, and the like. The metal oxide contained in the coating 30 may be, for example, a composite oxide having a spinel structure, such as Zn(Co _x Mn _1-x ) ₂ O ₄ (0<x<1) such as ZnMnCoO ₄ , Mn _1.5 Co _1.5 O ₄ , MnCo ₂ O ₄ , CoMn ₂ O ₄ , and the like. The metal oxide contained in the coating 30 may be a so-called ABO ₃ type perovskite oxide.

The conductive member 18 shown in FIG. 6A can have a first portion 181 and a second portion 182 with different infrared light reflectances, for example, by making the surface roughness of the coating 30 different. Specifically, the surface roughness of the coating 30 located at the first portion 181 may be smaller than the surface roughness of the coating 30 located at the second portion 182.

When the surface roughness of the coating 30 differs between the first portion 181 and the second portion 182, the surface roughness of the coating 30 located in the first portion 181 can be, for example, 0.01 μm or more and 1 μm or less. Also, the surface roughness of the coating 30 located in the second portion 182 can be, for example, 0.5 μm or more and 10 μm or less.

In addition, the conductive member 18 may have a first portion 181 and a second portion 182 that have different infrared light reflectances, for example, by making the surface roughness of the substrate 180 different. Specifically, the surface roughness of the substrate 180 located at the first portion 181 may be smaller than the surface roughness of the substrate 180 located at the second portion 182.

When the surface roughness of the substrate 180 differs between the first portion 181 and the second portion 182, the surface roughness of the substrate 180 located in the first portion 181 can be, for example, 0.01 μm or more and 1 μm or less. The surface roughness of the substrate 180 located in the second portion 182 can be, for example, 0.5 μm or more and 10 μm or less.

As a result, the amount of heat absorbed by the conductive member 18 in the first portion 181 is less than that in the second portion 182, and the temperature rise in the cell stack device 10 can be reduced. This makes it less likely that the durability of the cell stack device 10 will decrease due to overheating.

In addition, the conductive member 18 shown in FIG. 6A may form the first portion 181 and the second portion 182, for example, by roughening or smoothing a portion of the surface of the coating 30 or the substrate 180. In addition, the conductive member 18 may form the first portion 181 and the second portion 182 by changing the degree of roughening and/or smoothing.

The conductive member 18 may also have different reflectances for infrared light, for example, by varying the porosity of the coating 30. Specifically, the porosity of the coating 30 located in the first portion 181 may be smaller than the porosity of the coating 30 located in the second portion 182.

When the porosity of the coating 30 differs between the first portion 181 and the second portion 182, the porosity of the coating 30 located in the first portion 181 can be, for example, 0.1% or more and 30% or less. Also, the porosity of the coating 30 located in the second portion 182 can be, for example, 10% or more and 60% or less.

In this way, in the first portion 181, where the porosity of the coating 30 is smaller than that of the second portion 182, the amount of heat absorbed by the conductive member 18 is reduced compared to the second portion 182, and the temperature rise of the cell stack device 10 can be reduced. This makes it possible to prevent a decrease in durability due to overheating of the cell stack device 10.

The conductive member 183 shown in FIG. 6B has a lower reflectance of infrared light than the first portion 181 of the conductive member 18 shown in FIG. 6A. Such a conductive member 183 may have, for example, a coating 30 with a greater surface roughness than the coating 30 located at the first portion 181.

When the surface roughness of the coating 30 differs between the first portion 181 and the conductive member 183, the surface roughness of the coating 30 located in the first portion 181 can be, for example, 0.01 μm or more and 1 μm or less. Also, the surface roughness of the coating 30 of the conductive member 183 can be, for example, 0.5 μm or more and 10 μm or less.

In addition, the conductive member 183 may have a lower reflectance of infrared light than the first portion 181, for example, by making the surface roughness of the base material 180 different from that of the first portion 181. Specifically, the surface roughness of the base material 180 possessed by the conductive member 183 may be greater than the surface roughness of the base material 180 located at the first portion 181.

When the surface roughness of the substrate 180 differs between the first portion 181 and the conductive member 183, the surface roughness of the substrate 180 located in the first portion 181 can be, for example, 0.01 μm or more and 1 μm or less. In addition, the surface roughness of the substrate 180 of the conductive member 183 can be, for example, 0.5 μm or more and 10 μm or less.

In addition, the conductive member 183 may have a different reflectance of infrared light, for example, by making the porosity of the coating 30 different from that of the first portion 181. Specifically, the porosity of the coating 30 of the conductive member 183 may be greater than the porosity of the coating 30 located in the first portion 181.

When the porosity of the coating 30 differs between the first portion 181 and the conductive member 183, the porosity of the coating 30 located in the first portion 181 can be, for example, 0.1% or more and 30% or less. Also, the porosity of the coating 30 of the conductive member 183 can be, for example, 10% or more and 60% or less.

In addition, the conductive member 183 may have a different reflectance of infrared light, for example, by making the porosity of the substrate 180 different from that of the first portion 181. Specifically, the porosity of the substrate 180 that the conductive member 183 has may be greater than the porosity of the substrate 180 located in the first portion 181.

When the porosity of the substrate 180 differs between the first portion 181 and the conductive member 183, the porosity of the substrate 180 located in the first portion 181 can be, for example, 0% or more and 30% or less. In addition, the porosity of the substrate 180 of the conductive member 183 can be, for example, 1% or more and 30% or less.

In this way, by making the reflectance of infrared light in the conductive member 183 located in the second region R2 smaller than the reflectance of infrared light in the first portion 181, the heat absorbed by the conductive member 183 can promote temperature rise in the second region R2, which is less likely to become hot than the first region R1. This reduces temperature variation during power generation, improving the power generation performance of the cell stack device 10.

<Electrochemical cell>
4 has been described using an example in which the first member located in the first region R1 and the second member located in the second region R2 are conductive members 18, but the cell 1 may have a first member and a second member. In such a case, the cell 1 as the first member has a first portion located at the upper end side of the first region R1 in the length direction L, and a second portion located at the lower end side of the length direction L. The first portion of the cell 1 has a higher reflectance of infrared light than the second portion.

As a result, the amount of heat absorbed by the cell 1 in the first portion of the cell 1 is reduced compared to the second portion, and the temperature rise in the cell stack device 10 can be reduced. This makes it less likely that the durability of the cell stack device 10 will decrease due to overheating.

On the other hand, in the second portion of cell 1, the amount of heat absorbed by cell 1 is greater than in the first portion, accelerating the temperature rise of the cell stack device 10. This makes it less likely that a decrease in power generation performance due to insufficient heating of the cell stack device 10 will occur.

In addition, the cell 1 as the second member located in the second region R2 has a lower reflectance of infrared light than the first portion of the cell 1 located in the first region R1. This allows the heat absorbed by the cell 1 to promote temperature rise in the second region R2, which is less likely to become hot than the first region R1. This reduces temperature variation during power generation, improving the power generation performance of the cell stack device 10.

Next, the details of the cell 1 located in the first region R1 and the second region R2 will be further described with reference to FIG. 7. FIG. 7 is a cross-sectional view showing an example of an electrochemical cell according to the first embodiment. In FIG. 7, each element of the cell 1 shown in FIG. 1A is shown in a simplified form.

As shown in FIG. 7, in the cell 1, the element portion 3 is located on the flat surface n2 of the support substrate 2, and the interconnector 4 is located on the flat surface n1 opposite the flat surface n2. Of the element portion 3, the fuel electrode layer 5 and solid electrolyte layer 6 extend from the flat surface n2 of the support substrate 2, around the side surface m, and onto the flat surface n1. Note that the gas flow path 2a is not shown in FIG. 7.

In the cell 1 shown in FIG. 7, for example, by varying the surface roughness of the cathode layer 8, a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2 can be positioned. Specifically, the surface roughness of the surface 8a of the cathode layer 8 located in the first portion may be smaller than the surface roughness of the surface 8a of the cathode layer 8 located in the second portion. Also, the surface roughness of the surface 8a of the cathode layer 8 located in the second region R2 may be larger than the surface roughness of the surface 8a of the cathode layer 8 located in the first portion.

The surface roughness of the surface 8a located in the first portion can be, for example, 0.1 μm or more and 10 μm or less. The surface roughness of the surface 8a located in the second portion can be, for example, 1 μm or more and 100 μm or less. The surface roughness of the surface 8a located in the second region R2 can be, for example, 1 μm or more and 100 μm or less.

Furthermore, the cell 1 can be configured to have a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2, for example, by varying the porosity of the cathode layer 8. Specifically, the porosity of the cathode layer 8 located in the first portion may be smaller than the porosity of the cathode layer 8 located in the second portion. Furthermore, the porosity of the cathode layer 8 located in the second region R2 may be larger than the porosity of the cathode layer 8 located in the first portion.

The porosity of the air electrode layer 8 located in the first portion can be, for example, 20% or more and 50% or less. The porosity of the air electrode layer 8 located in the second portion can be, for example, 30% or more and 60% or less. The porosity of the air electrode layer 8 located in the second region R2 can be, for example, 30% or more and 60% or less.

Furthermore, by varying the length of the width direction W of the intermediate layer 7, for example, the cell 1 can be configured to position a first member having a first portion and a second portion with different infrared light reflectance, and a second member located in the second region R2. Specifically, the length of the width direction W of the intermediate layer 7 located in the first portion may be greater than the length of the width direction W of the intermediate layer 7 located in the second portion. Furthermore, the length of the width direction W of the intermediate layer 7 located in the second region R2 may be less than the length of the width direction W of the intermediate layer 7 located in the first portion.

The length in the width direction W of the intermediate layer 7 located in the first portion can be, for example, 1.1 times or more the length in the width direction W of the air electrode layer 8. The length in the width direction W of the intermediate layer 7 located in the second portion can be, for example, 1.01 times or more the length in the width direction W of the air electrode layer 8. The length in the width direction W of the intermediate layer 7 located in the second region R2 can be, for example, 1.01 times or more the length in the width direction W of the air electrode layer 8.

Furthermore, the cell 1 can be configured to have a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2, by, for example, varying the surface roughness of the intermediate layer 7. Specifically, the surface roughness of the surface 7a of the intermediate layer 7 located in the first portion may be smaller than the surface roughness of the surface 7a of the intermediate layer 7 located in the second portion. Furthermore, the surface roughness of the surface 7a of the intermediate layer 7 located in the second region R2 may be larger than the surface roughness of the surface 7a of the intermediate layer 7 located in the first portion.

The surface roughness of the surface 7a located in the first portion can be, for example, 0.01 μm or more and 2 μm or less. The surface roughness of the surface 7a located in the second portion can be, for example, 0.5 μm or more and 3 μm or less. The surface roughness of the surface 7a located in the second region R2 can be, for example, 0.5 μm or more and 3 μm or less.

Furthermore, the cell 1 can be configured to have a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2, by, for example, varying the porosity of the intermediate layer 7. Specifically, the porosity of the intermediate layer 7 located in the first portion may be smaller than the porosity of the intermediate layer 7 located in the second portion. Furthermore, the porosity of the intermediate layer 7 located in the second region R2 may be larger than the porosity of the intermediate layer 7 located in the first portion.

The porosity of the intermediate layer 7 located in the first portion can be, for example, 0.1% or more and 30% or less. The porosity of the intermediate layer 7 located in the second portion can be, for example, 10% or more and 50% or less. The porosity of the intermediate layer 7 located in the second region R2 can be, for example, 10% or more and 50% or less.

Furthermore, the cell 1 can be configured such that, for example, by varying the surface roughness of the solid electrolyte layer 6, a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2, are positioned. Specifically, the surface roughness of the surface 6a of the solid electrolyte layer 6 located in the first portion may be smaller than the surface roughness of the surface 6a of the solid electrolyte layer 6 located in the second portion. Furthermore, the surface roughness of the surface 6a of the solid electrolyte layer 6 located in the second region R2 may be larger than the surface roughness of the surface 6a of the solid electrolyte layer 6 located in the first portion.

The surface roughness of the surface 6a located in the first portion can be, for example, 0.01 μm or more and 2 μm or less. The surface roughness of the surface 6a located in the second portion can be, for example, 0.5 μm or more and 5 μm or less. The surface roughness of the surface 6a located in the second region R2 can be, for example, 0.5 μm or more and 5 μm or less.

Furthermore, the cell 1 can be configured to have a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2, by, for example, varying the porosity of the solid electrolyte layer 6. Specifically, the porosity of the solid electrolyte layer 6 located in the first portion may be smaller than the porosity of the solid electrolyte layer 6 located in the second portion. Furthermore, the porosity of the solid electrolyte layer 6 located in the second region R2 may be larger than the porosity of the solid electrolyte layer 6 located in the first portion.

The porosity of the solid electrolyte layer 6 located in the first portion can be, for example, 0.1% or more and 3% or less. The porosity of the solid electrolyte layer 6 located in the second portion can be, for example, 1% or more and 10% or less. The porosity of the solid electrolyte layer 6 located in the second region R2 can be, for example, 1% or more and 10% or less.

Furthermore, the cell 1 can be configured to position a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2, for example, by varying the length of the width direction W of the interconnector 4. Specifically, the length of the width direction W of the interconnector 4 located in the first portion may be smaller than the length of the width direction W of the interconnector 4 located in the second portion. Furthermore, the length of the width direction W of the interconnector 4 located in the second region R2 may be larger than the length of the width direction W of the interconnector 4 located in the first portion.

The length in the width direction W of the interconnector 4 located in the first region can be, for example, 1.01 times or more the length in the width direction W of the air electrode layer 8. The length in the width direction W of the interconnector 4 located in the second region can be, for example, 1.1 times or more the length in the width direction W of the air electrode layer 8. The length in the width direction W of the interconnector 4 located in the second region R2 can be, for example, 1.1 times or more the length in the width direction W of the air electrode layer 8.

Furthermore, the cell 1 can be configured to have a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2, for example, by varying the surface roughness of the interconnector 4. Specifically, the surface roughness of the surface 4a of the interconnector 4 located in the first portion may be smaller than the surface roughness of the surface 4a of the interconnector 4 located in the second portion. Furthermore, the surface roughness of the surface 4a of the interconnector 4 located in the second region R2 may be larger than the surface roughness of the surface 4a of the interconnector 4 located in the first portion.

The surface roughness of the surface 4a located in the first portion can be, for example, 0.01 μm or more and 2 μm or less. The surface roughness of the surface 4a located in the second portion can be, for example, 0.5 μm or more and 10 μm or less. The surface roughness of the surface 4a located in the second region R2 can be, for example, 0.5 μm or more and 10 μm or less.

Furthermore, the cell 1 can be configured to have a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2, for example, by varying the porosity of the interconnector 4. Specifically, the porosity of the interconnector 4 located in the first portion may be smaller than the porosity of the interconnector 4 located in the second portion. Furthermore, the porosity of the interconnector 4 located in the second region R2 may be larger than the porosity of the interconnector 4 located in the first portion.

The porosity of the interconnector 4 located in the first portion can be, for example, 0.1% or more and 3% or less. The porosity of the interconnector 4 located in the second portion can be, for example, 1% or more and 10% or less. The porosity of the interconnector 4 located in the second region R2 can be, for example, 1% or more and 10% or less.

Furthermore, when adjacent cells 1 in the thickness direction T are joined via a bonding material (not shown), by making the surface roughness of the bonding material different, it is possible to position a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2. Specifically, the surface roughness of the bonding material located in the first portion may be smaller than the surface roughness of the bonding material located in the second portion. Furthermore, the surface roughness of the bonding material located in the second region R2 may be larger than the surface roughness of the bonding material located in the first portion.

The surface roughness of the bonding material located in the first portion can be, for example, 0.1 μm or more and 10 μm or less. The surface roughness of the bonding material located in the second portion can be, for example, 1 μm or more and 100 μm or less. The surface roughness of the bonding material located in the second region R2 can be, for example, 1 μm or more and 100 μm or less.

Furthermore, when adjacent cells 1 in the thickness direction T are joined via a bonding material (not shown), by making the porosity of the bonding material different, it is possible to position a first member having a first portion and a second portion with different infrared light reflectances, and a second member located in the second region R2. Specifically, the porosity of the bonding material located in the first portion may be smaller than the porosity of the bonding material located in the second portion. Furthermore, the porosity of the bonding material located in the second region R2 may be larger than the porosity of the bonding material located in the first portion.

The porosity of the bonding material located in the first region can be, for example, 20% or more and 50% or less. The porosity of the bonding material located in the second region can be, for example, 30% or more and 60% or less. The porosity of the bonding material located in the second region R2 can be, for example, 30% or more and 60% or less.

The conductive member 18 and cell 1 described above may have different surface roughnesses, for example, by roughening or smoothing a portion of the surface of each portion, or by changing the degree of roughening and/or smoothing. The surface roughness of each member can be determined based on the arithmetic mean roughness Ra defined in JIS B0633;2001. The arithmetic mean roughness Ra can be calculated by image analysis of a cross section perpendicular to the surface of the conductive member 18 or cell 1, respectively.

In addition, the porosity of each portion of the conductive member 18 and the cell 1 can be measured based on the results of observing a cross section of the conductive member 18 or the cell 1 with a SEM (Scanning Electron Microscope).

The conductive member 18 and cell 1 according to this embodiment may be produced by any method, and are not particularly limited.

<Module>
Next, a module according to this embodiment using the above-mentioned cell stack device 10 will be described with reference to Fig. 8. Fig. 8 is an external perspective view showing the module according to the first embodiment. Fig. 8 shows a state in which the front and rear surfaces, which are part of the storage container 101, have been removed and the cell stack device 10 of the fuel cell stored inside has been removed to the rear.

As shown in FIG. 8, the module 100 includes a storage container 101 and a cell stack device 10 stored in the storage container 101. In addition, a reformer 102 is disposed above the cell stack device 10.

The reformer 102 reforms raw fuel such as natural gas or kerosene to generate fuel gas, which is then supplied to the cell 1. The raw fuel is supplied through a raw fuel supply pipe 103. The reformer 102 may also include a vaporizer 102a that vaporizes water, and a reformer 102b. The reformer 102b includes a reforming catalyst (not shown) and reforms the raw fuel into fuel gas. Such a reformer 102 can perform steam reforming, which is a highly efficient reforming reaction.

The fuel gas generated in the reformer 102 is then supplied to the gas flow path 2a (see Figure 1A) of the cell 1 through the gas flow pipe 20, the gas tank 16, and the support member 14.

In addition, in the module 100 configured as described above, the temperature inside the module 100 during normal power generation is approximately 500°C to 1000°C due to the combustion of gas and power generation by the cell 1.

In such a module 100, as described above, the highly durable cell stack device 10 is housed and configured, thereby making the module 100 highly durable.

<Module housing device>
Fig. 9 is an exploded perspective view showing an example of a module housing device according to the first embodiment. The module housing device 110 includes an outer case 111, the module 100 shown in Fig. 8, and auxiliary equipment (not shown). The auxiliary equipment operates the module 100. The module 100 and the auxiliary equipment are housed in the outer case 111. Note that some components are omitted in Fig. 9.

The exterior case 111 of the module accommodating device 110 shown in Figure 9 has support posts 112 and an exterior plate 113. A partition plate 114 divides the interior of the exterior case 111 into upper and lower sections. The space above the partition plate 114 in the exterior case 111 is a module accommodating chamber 115 that accommodates the module 100, and the space below the partition plate 114 in the exterior case 111 is an auxiliary equipment accommodating chamber 116 that accommodates the auxiliary equipment that operates the module 100. Note that in Figure 8, the auxiliary equipment accommodated in the auxiliary equipment accommodating chamber 116 is omitted.

The partition plate 114 also has an air flow port 117 for allowing air from the auxiliary equipment housing chamber 116 to flow toward the module housing chamber 115. The exterior plate 113 that constitutes the module housing chamber 115 has an exhaust port 118 for exhausting air from within the module housing chamber 115.

In such a module storage device 110, as described above, a highly durable module 100 is provided in the module storage chamber 115, thereby making the module storage device 110 highly durable.

10 is a cross-sectional view showing another example of the electrochemical cell device according to the first embodiment. The cell stack device 10 shown in FIG. 10 differs from the conductive member 18 according to the above embodiment in that the conductive member 18 includes a first member 18A and a second member 18B having different infrared light reflectances. The first member 18A is configured to have a higher infrared light reflectance than the second member 18B, and the first member 18A and the second member 18B are disposed between adjacent cells 1. In this way, even when the first member 18A and the second member 18B having different infrared light reflectances are used as the conductive member 18, the temperature variation in the first region R1 (see FIG. 4) is reduced. Therefore, according to this configuration, the durability of the cell stack device 10 is increased.

The first member 18A and the second member 18B can be fabricated, for example, in accordance with the conductive member 183 shown in FIG. 6B. The first member 18A and the second member 18B can be in contact with each other or spaced apart.

Second Embodiment
FIG. 11 is a perspective view showing an example of an electrochemical cell device according to the second embodiment. The cell stack device 10A shown in FIG. 11 is an electrochemical cell device in which flat electrochemical cells each having an element unit 3A and a conductive member 18 sandwiching the element unit 3A are stacked. The element unit 3A has a solid electrolyte layer (for example, a solid electrolyte layer 6), and a first electrode layer (for example, a fuel electrode layer 5) and a second electrode layer (for example, an air electrode layer 8) sandwiching the solid electrolyte layer. The element unit 3A may have an intermediate layer (for example, an intermediate layer 7) located between the solid electrolyte layer and the second electrode layer. The conductive member 18 has a flow path (not shown) through which a reactant gas flows, and is sealed with a sealing member (not shown) or the like. The cell stack device 10A has end current collecting

members

91 and 92 located at both ends.

FIG. 12 is a cross-sectional view showing an example of temperature distribution in a flat electrochemical cell. As shown in FIG. 12, the cell stack device 10Y is likely to have high temperatures in the center of the cell stack device 10Y during power generation, with temperatures t11 to t15 being in the order of t11>t12>t13>t14>t15. In addition, the temperature during power generation is likely to decrease toward both ends in the Y-axis direction and Z-axis direction away from the center. For this reason, the first region R1 located in the center of the element unit 3A in the thickness direction (Z-axis direction) may become hotter than the second region R2 located at both ends of the element unit 3A in the thickness direction (Z-axis direction), for example, and durability may be easily reduced. Although FIG. 12 shows a cross-sectional view along the YZ plane, the cross-section along the ZX plane is generally the same as FIG. 12.

In this embodiment, therefore, a conductive member 18 with different infrared light reflectances is applied between the first region R1 and the second region R2. Figure 13 is a cross-sectional view showing an example of an electrochemical cell device according to the second embodiment.

As shown in FIG. 13, the conductive member 18 located in the first region R1 has a first portion 181 and a second portion 182. The first portion 181 has a higher reflectance of infrared light than the second portion 182. As a result, by making the reflectance of infrared light in the conductive member 18 located in the first portion 181, which is a portion that is prone to high temperatures, higher than in other portions, the amount of heat absorbed by the conductive member 18 is reduced, and the temperature rise of the cell stack device 10A can be reduced. This makes it less likely that the durability of the cell stack device 10A will decrease due to overheating.

On the other hand, in the second portion 182, the amount of heat absorbed by the conductive member 18 is greater than in the first portion 181, which promotes a temperature rise in the cell stack device 10. This makes it less likely that a decrease in power generation performance due to insufficient heating of the cell stack device 10 will occur.

In addition, the conductive member 183 as the second member located in the second region R2 has a lower reflectance of infrared light than the first portion 181. As a result, in the second region R2, which is less likely to become hot than the first region R1, the heat absorbed by the conductive member 183 can promote a temperature rise. This reduces temperature variation during power generation, improving the power generation performance of the cell stack device 10A.

FIG. 14 is a cross-sectional view showing an example of the first region R1 shown in FIG. 13. The conductive members 18 located in the first region R1 of the cell stack device 10A are electrically connected via conductive member 18-3, which is an interconnector, with conductive member 18-1 connected to one adjacent element unit 3A and conductive member 18-2 connected to the other adjacent element unit 3A. Hereinafter, conductive members 18-1 to 18-3 located between element units 3A may be collectively referred to as conductive members 18.

As mentioned above, the temperature near the center of the cell stack device 10A becomes hot during power generation and is difficult to cool, which can cause temperature variations within the cell stack device 10A. Specifically, the temperature in the center of the cell stack device 10A is more likely to rise than on the outer edge side away from the center of the cell stack device 10A, and for example, the temperature may become higher than that suitable for power generation, which can lead to a decrease in durability.

Therefore, as shown in FIG. 14, temperature variation may be reduced by applying a conductive member 18 having a first portion 181 and a second portion 182 between element portions 3A located in the first region R1 of the cell stack device 10A. Specifically, the conductive member 18 is positioned so that the first portion 181 is connected to the central portion in the X-axis direction and/or Y-axis direction between the element portions 3A, and the second portion 182 is connected to a portion away from the central portion in the X-axis direction and/or Y-axis direction between the element portions 3A. The reflectance of infrared light at the first portion 181 is smaller than the reflectance of infrared light at the second portion 182.

As a result, the amount of current flowing through the first portion 181 is less than that through the second portion 182, and the temperature rise in the first portion 181 is reduced. Therefore, according to this embodiment, the durability of the cell stack device 10A is increased.

In the above, conductive members 18-1 to 18-3 are collectively described as conductive member 18, but conductive member 18-3, which is different from conductive members 18-1 and 18-2, may be used as a third member, and conductive members 18-1 and 18-2 may be connected in series. The surface roughness and/or porosity of conductive members 18-1 to 18-3 may be the same or different.

FIG. 15 is a cross-sectional view showing another example of an electrochemical cell device according to the second embodiment. The cell stack device 10B shown in FIG. 15 differs from the conductive member 18 shown in FIG. 14 in that the conductive member 18 located in the first region R1 includes a first member 18A and a second member 18B having different infrared light reflectances. The infrared light reflectance of the first member 18A is higher than that of the second member 18B, and the first member 18A and the second member 18B are disposed between adjacent element portions 3A. In this way, even when the first member 18A and the second member 18B having different infrared light reflectances are used as the conductive member 18, the temperature rise in the central portion of the cell stack device 10B is reduced. Therefore, according to this configuration, the durability of the cell stack device 10B is increased.

Furthermore, the conductive member 183 located in the second region R2 (see FIG. 13) has a lower infrared light reflectance than the second portion 182 or the second member 18B. As a result, in the second region R2, where the temperature is less likely to become high, the heat absorbed by the conductive member 183 can promote a temperature rise. This reduces the temperature variation during power generation, improving power generation performance. Note that, like the conductive member 18 located in the first region R1, the conductive member 18-1 connected to one adjacent element portion 3A and the conductive member 18-2 connected to the other adjacent element portion 3A may also be electrically connected via the conductive member 18-3, which is an interconnector, in the conductive member 18 located in the second region R2.

In the above description, the

cell stack devices

10A and 10B are exemplified in which the first member located in the first region R1 and the second member located in the second region R2 are conductive members 18, but the element portion 3A may have a first member and a second member. In such a case, the element portion 3A as the first member has a first portion located in the central portion of the first region R1 in the X-axis direction and/or Y-axis direction, and a second portion located outside the first portion. The first portion of the element portion 3A has a higher reflectance of infrared light than the second portion.

As a result, the amount of heat absorbed by the element unit 3A is less in the first portion of the element unit 3A than in the second portion, and the temperature rise in the

cell stack devices

10A, 10B can be reduced. This makes it less likely that the durability of the

cell stack devices

10A, 10B will decrease due to overheating.

On the other hand, in the second portion of the element portion 3A, the amount of heat absorbed by the element portion 3A is greater than in the first portion, which promotes a temperature rise in the

cell stack devices

10A, 10B. This makes it less likely that a decrease in power generation performance due to insufficient heating of the

cell stack devices

10A, 10B will occur.

Furthermore, the element portion 3A as the second member located in the second region R2 has a lower reflectance of infrared light than the first portion of the element portion 3A located in the first region R1. As a result, in the second region R2, which is less likely to become hot than the first region R1, the heat absorbed by the element portion 3A can promote a temperature rise. This reduces temperature variation during power generation, improving the power generation performance of the

cell stack devices

10A, 10B.

[Third embodiment]
Fig. 16A is a cross-sectional view showing an example of an electrochemical cell constituting the electrochemical cell device according to the third embodiment. Figs. 16B and 16C are cross-sectional views showing another example of the electrochemical cell according to the third embodiment. In this embodiment, a cell stack device 10C is obtained by applying the cell 1 shown in Figs. 16A to 16C to the electrochemical cell device shown in Fig. 2A or 11.

As shown in Figs. 16A to 16C, the cell 1 has an element section 3C in which a fuel electrode layer 5, a solid electrolyte layer 6, and an air electrode layer 8 are laminated, and a support substrate 2. The element section 3C may have an intermediate layer 7 located between the solid electrolyte layer 6 and the air electrode layer 8. The support substrate 2 has a through hole or a fine hole at a portion of the element section 3C that contacts the fuel electrode layer 5, and has a member 120 located outside the gas flow path 2a. The support substrate 2 can circulate gas between the gas flow path 2a and the element section 3C. The support substrate 2 may include, for example, one or more metal members. The material of the metal member may be an alloy containing chromium. The metal member may have a conductive coating layer. The support substrate 2 is a conductive member that electrically connects adjacent cells 1 to each other. The element section 3C may be formed directly on the support substrate 2, or may be bonded to the support substrate 2 by a bonding material.

In the example shown in FIG. 16A, the side of the fuel electrode layer 5 is covered with a solid electrolyte layer 6, which airtightly seals the gas flow path 2a through which the fuel gas flows. As shown in FIG. 16B, the side of the fuel electrode layer 5 may be covered and sealed with a dense sealing material 9. The sealing material 9 that covers the side of the fuel electrode layer 5 may have electrical insulation properties. The material of the sealing material 9 may be, for example, glass or ceramics.

The gas flow path 2a of the support substrate 2 may also be formed by a member 120 having projections and recesses as shown in FIG. 16C.

In this embodiment, the member 120 is joined to the air electrode layer 8 of another adjacent cell 1 via other conductive members such as inter-cell connection members and bonding materials. Note that the member 120 may be in direct contact with the air electrode layer 8 of another cell 1 without being connected to other conductive members, etc.

In this embodiment, the cell 1 including the support substrate 2 (conductive member 18) having the first portion 181 and the second portion 182 is placed in the first region R1 of the cell stack device 10C. Specifically, the first portion 181 of the support substrate 2 (conductive member 18) is positioned in the portion 1a of the cell 1 that is likely to become relatively hot, and the second portion 182 is positioned in the portion 1b of the cell 1 that is likely to become relatively cold. Since the reflectance of infrared light in the first portion 181 is smaller than that in the second portion 182, the first portion 181 absorbs less heat than the second portion 182, and the temperature rise in the portion 1a is reduced. Therefore, according to this embodiment, the durability of the support substrate 2 (conductive member 18) and the cell stack device 10C is increased. Note that in Figures 16A to 16C, the portion 1a of the cell 1 that is likely to become hot is shown as being close to the center of the element portion 3C as in the second embodiment, but the portion 1a of the cell 1 that is likely to become hot may be close to the fuel gas exhaust port as in the first embodiment.

The first region R1 and the second region R2 are not limited to the examples shown in Figures 3, 4, 12, and 13. The first region R1 and the second region R2 can be set appropriately according to the structure, characteristics, etc. of the cell stack of the electrochemical cell device. For example, one conductive member 18 sandwiched between two cells 1 located adjacent to the first region R1 at the center of the cell stack may have a first portion and a second portion, and the reflectance of infrared light in one conductive member 18 located in the second region R2 at one end of the cell stack may be smaller than the reflectance of infrared light in the first portion 181.

In addition, the arrangement and ratio of the first portion 181 and the second portion 182 of the conductive member 18 located in the first region R1 can be set appropriately according to the structure of the cell 1 located in the first region R1.

In the above explanation, the cell stack device 10C is exemplified in which the first member located in the first region R1 and the second member located in the second region R2 are conductive members 18, but the element portion 3C may have a first member and a second member. In such a case, the element portion 3C as the first member has a first portion located in the portion 1a of the cell 1 in the first region R1, and a second portion located in the portion 1b. The first portion of the element portion 3C has a higher reflectance of infrared light than the second portion.

As a result, the amount of heat absorbed by the element unit 3C in the first portion is less than that absorbed in the element unit 3C in the second portion, and the temperature rise in the cell stack device 10C can be reduced. This makes it less likely that the durability of the cell stack device 10C will decrease due to overheating.

On the other hand, in the second portion of the element portion 3C, the amount of heat absorbed by the element portion 3C is greater than in the first portion, accelerating the temperature rise of the cell stack device 10C. This makes it less likely that a decrease in power generation performance due to insufficient heating of the cell stack device 10C will occur.

Furthermore, the element portion 3C as the second member located in the second region R2 has a lower reflectance of infrared light than the first portion of the element portion 3C located in the first region R1. As a result, in the second region R2, which is less likely to become hot than the first region R1, the heat absorbed by the element portion 3C can promote a temperature rise. This reduces temperature variation during power generation, improving the power generation performance of the cell stack device 10C.

[Other embodiments]
In the above-mentioned embodiments, a fuel cell, a fuel cell stack device, a fuel cell module, and a fuel cell device are shown as examples of the "battery chemical cell", "battery chemical cell device", "module", and "module housing device", but other examples may be an electrolytic cell, an electrolytic cell stack device, an electrolytic module, and an electrolytic device, respectively. The electrolytic cell has a hydrogen electrode and an oxygen electrode, and decomposes water vapor into hydrogen and oxygen, or decomposes carbon dioxide into carbon monoxide and oxygen, when supplied with electric power. In the above-mentioned embodiments, an oxide ion conductor or a hydrogen ion conductor is shown as an example of the electrolyte material of the electrochemical cell, but a hydroxide ion conductor may also be used. Such an electrolytic cell, an electrolytic cell stack device, an electrolytic module, and an electrolytic device can improve durability. Also, electrolytic performance can be improved.

The present disclosure has been described in detail above, but the present disclosure is not limited to the above-described embodiment, and various modifications and improvements are possible without departing from the gist of the present disclosure.

In one embodiment, (1) an electrochemical cell device comprising:
A plurality of element portions arranged in a first direction;
and a conductive member located between each of the element portions adjacent to each other in the first direction,
a first member having a first portion and a second portion having a reflectance of infrared light different from that of the first portion is located in a first region located at a center portion in the first direction;
A second member having a lower reflectance for infrared light than the first portion is located in a second region located at an end in the first direction.

(2) In the electrochemical cell device of (1) above, the first portion may have a higher reflectance to infrared light than the second portion.

(3) In the electrochemical cell device of (1) or (2) above, the first region may have a higher maximum temperature than the second region.

(4) In any one of the electrochemical cell devices (1) to (3) above, the first member and the second member may be included in the element portion.

(5) In any one of the electrochemical cell devices (1) to (4) above, the first member and the second member may be included in the conductive member.

(6) In the electrochemical cell device according to any one of (1) to (5),
The first portion is located on one end side in a second direction intersecting the first direction,
The second portion may be located on the other end side in the second direction.

(7) In the electrochemical cell device according to any one of (1) to (5),
The first portion is located at a center portion in a second direction intersecting the first direction,
The second portion may be located at an end in the second direction.

In one embodiment, (8) an electrochemical cell device comprising:
A plurality of element portions arranged in a first direction;
and a conductive member located between each of the element portions adjacent to each other in the first direction,
a first member and a second member having a reflectance of infrared light different from that of the first member are located in a first region located at a center portion in the first direction;
A third member having a lower reflectance for infrared light than the first member is located in a second region located at an end in the first direction.

In one embodiment, the module (9) comprises: an electrochemical cell device according to any one of the above (1) to (8);
and a container for housing the electrochemical cell device.

In one embodiment, the module housing device (10) includes the module (9) and
Auxiliary equipment for operating the module;
and an exterior case that houses the module and the auxiliary equipment.

The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in a variety of forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

REFERENCE SIGNS LIST 1

Cell

3, 3A, 3C Element section 10 Cell stack device 11 Cell stack 12 Fixing member 13 Fixing material 14 Supporting member 15 Support body 16 Gas tank 17 End current collecting member 18 Conductive member 100 Module 110 Module accommodating device 181 First portion 182 Second portion 183 Conductive member

Claims

A plurality of element portions arranged in a first direction;
and a conductive member located between each of the element portions adjacent to each other in the first direction,
a first member having a first portion and a second portion having a reflectance of infrared light different from that of the first portion is located in a first region located at a center portion in the first direction;
a second member having a lower reflectance for infrared light than the first portion is located in a second region located at an end in the first direction.
The electrochemical cell device according to claim 1 , wherein the first portion has a higher reflectance for infrared light than the second portion.
The electrochemical cell device according to claim 1 , wherein the first region has a higher maximum temperature than the second region.
4. The electrochemical cell device according to claim 1, wherein the first member and the second member are included in the element portion.
4. The electrochemical cell device according to claim 1, wherein the first member and the second member are included in the conductive member.
The first portion is located on one end side in a second direction intersecting the first direction,
The electrochemical cell device according to claim 1 , wherein the second portion is located on the other end side in the second direction.
The first portion is located at a center portion in a second direction intersecting the first direction,
The electrochemical cell device according to claim 1 , wherein the second portion is located at an end in the second direction.
A plurality of element portions arranged in a first direction;
and a conductive member located between each of the element portions adjacent to each other in the first direction,
a first member and a second member having a reflectance of infrared light different from that of the first member are located in a first region located at a center portion in the first direction;
a third member having a lower reflectance for infrared light than the first member is located in the second region located at the end in the first direction.
An electrochemical cell device according to any one of claims 1 to 8;
and a container for housing the electrochemical cell device.
A module according to claim 9;
Auxiliary equipment for operating the module;
and an exterior case that houses the module and the auxiliary equipment.