WO2024104256A1 - 太阳能电池的电镀装置及电镀设备 - Google Patents

太阳能电池的电镀装置及电镀设备 Download PDF

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Publication number
WO2024104256A1
WO2024104256A1 PCT/CN2023/130891 CN2023130891W WO2024104256A1 WO 2024104256 A1 WO2024104256 A1 WO 2024104256A1 CN 2023130891 W CN2023130891 W CN 2023130891W WO 2024104256 A1 WO2024104256 A1 WO 2024104256A1
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Prior art keywords
electroplating
cathode plate
electroplating device
air
substrate
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PCT/CN2023/130891
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English (en)
French (fr)
Inventor
朱明光
刘仲雨
王子港
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天合光能股份有限公司
天合光能（常州）科技有限公司
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Publication of WO2024104256A1 publication Critical patent/WO2024104256A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the utility model relates to the technical field of photovoltaics, in particular to an electroplating device and electroplating equipment for solar cells.
  • electroplating technology is used to replace silver in the metallization process with cheap metals such as copper, making electroplating technology a new way to reduce costs.
  • electroplating technology has developed rapidly in the photovoltaic field, but due to the problems of battery edge leakage, electrode sparking, and electrode wear on silicon wafers during the electroplating process, there is still some distance to go before the industrial application of electroplating technology.
  • the purpose of the present invention is to provide an electroplating device and electroplating equipment for solar cells to improve the feasibility of electroplating technology for solar cells.
  • the present invention provides a solar cell electroplating device, which includes:
  • a substrate is provided with an electroplating space
  • an anode member located above the cathode plate
  • the exhaust system includes an exhaust channel arranged in the base body, and the exhaust channel has an air suction port and an exhaust port;
  • the air suction port is arranged on the upper surface of the cathode plate, and the air exhaust port faces outside the base.
  • the plating space is obtained by opening a hole in the substrate.
  • the exhaust channel is embedded in the base.
  • the exhaust channel has a plurality of suction ports distributed on the upper surface of the cathode plate.
  • the electroplating device further comprises:
  • the cathode electrode is arranged in the substrate, one end of which is located outside the substrate and the other end is electrically connected to the cathode plate.
  • the electroplating device further comprises:
  • the air blowing system comprises an air blowing channel arranged in the base body, wherein the air blowing channel has an air blowing port and a nozzle;
  • the air outlet faces outside the base
  • the nozzle is located between the cathode plate and the side wall of the electroplating space and opens upward.
  • the blast channel has a plurality of nozzles closely arranged around the cathode plate, and two adjacent nozzles form a contact seal.
  • the nozzle is not lower than the upper surface of the cathode plate.
  • the substrate includes a top frame, and the inner surface of the top frame defines the upper boundary of the electroplating space; the electroplating device also includes:
  • the air guide groove is arranged on the inner surface of the top frame body and is opposite to the position of the nozzle below.
  • the anode member includes: an anode rod and an anode electrode arranged in parallel;
  • the anode rod is arranged above the cathode plate
  • the anode electrode is buried in the substrate, with one end located outside the substrate and the other end electrically connected to the anode rod.
  • the electroplating device includes a plurality of sub-electroplating modules combined together;
  • Each sub-electroplating module includes a substrate, a cathode plate, an anode member and an exhaust channel.
  • the present invention discloses an electroplating device, comprising:
  • Any of the above-mentioned electroplating devices for solar cells is placed in an electroplating tank, and the electroplating space is connected to the electroplating tank.
  • the electroplating device includes: a substrate, provided with an electroplating space; a cathode plate located in the electroplating space; an anode member located above the cathode plate; an exhaust system, including an exhaust channel arranged in the substrate, the exhaust channel having an air suction port and an exhaust port; wherein the air suction port is arranged on the upper surface of the cathode plate, and the exhaust port faces outside the substrate.
  • a solar cell silicon wafer is placed on the cathode plate, and an electroplating solution is filled in the electroplating space, and the electroplating solution infiltrates the anode member and the silicon wafer.
  • electricity is passed between the cathode plate and the anode member, the cations of the anode member are freed to the surface of the silicon wafer to form a wire.
  • an exhaust system is used to extract air, and the suction port creates negative pressure on the lower surface of the silicon wafer.
  • the silicon wafer is adsorbed by the exhaust system, thereby avoiding relative movement between the cathode plate and the silicon wafer, keeping the cathode plate and the silicon wafer relatively still, thereby avoiding damage to the silicon wafer surface due to relative movement, improving the electroplating yield, and improving the feasibility of the electroplating device.
  • the plating solution is prevented from penetrating between the silicon wafer and the cathode plate during the electroplating process and corroding the cathode plate.
  • FIG1 is a cross-sectional view of a solar cell electroplating device provided by an embodiment of the present disclosure in a horizontal direction;
  • FIG2 is a cross-sectional view of a solar cell electroplating device provided by an embodiment of the present disclosure in a vertical direction;
  • FIG3 is a cross-sectional view in the horizontal direction of the electroplating device for a solar cell provided in an embodiment of the present disclosure.
  • the representations with reference to the terms “one embodiment”, “some embodiments”, “examples”, “specific examples”, or “some examples” etc. mean that the specific features, structures, materials or characteristics represented in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. Moreover, the specific features, structures, materials or characteristics represented may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples represented in the present application and the features of the different embodiments or examples, unless they are contradictory.
  • first and second are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as “first” or “second” may explicitly or implicitly include at least one of the features. In the representation of this application, the meaning of "plurality” is two or more, unless otherwise clearly and specifically defined.
  • first, second, etc. are used in some instances in this document to refer to various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first interface and a second interface, etc. are represented. Furthermore, as used in this document, the singular forms “one”, “an”, and “the” are intended to include plural forms as well, unless otherwise indicated in the context. It should be further understood that the terms “comprising” and “including” indicate the presence of features, steps, operations, elements, components, items, types, and/or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, types, and/or groups.
  • the electroplating device for solar cells provided in the embodiment of the present disclosure includes:
  • the substrate 10 is provided with a plating space 1a;
  • an anode member 12 located above the cathode plate 11;
  • the exhaust system 13 includes an exhaust channel 1b disposed in the base 10, and the exhaust channel 1b has an air suction port 1c and an air exhaust port 1d;
  • the air inlet 1 c is disposed on the upper surface of the cathode plate 11 , and the air outlet 1 d faces the outside of the base body 10 .
  • the solar cell silicon wafer 14 is placed on the cathode plate 11, and the electroplating space 1a is filled with electroplating solution, and the electroplating solution infiltrates the anode member 12 and the silicon wafer 14.
  • the cations of the anode member 12 are freed to the surface of the silicon wafer 14 to form a conductor.
  • the exhaust system 13 is used to exhaust air, and the suction port 1c forms a negative pressure on the lower surface of the silicon wafer 14.
  • the silicon wafer 14 is adsorbed by the exhaust system 13, thereby avoiding relative movement between the cathode plate 11 and the silicon wafer 14, and keeping the cathode plate 11 and the silicon wafer 14 relatively still, thereby avoiding damage to the surface of the silicon wafer 14 due to relative movement, improving the electroplating yield, and improving the feasibility of the electroplating device.
  • the dotted area in FIG. 1 indicates the location of the electroplating space 1 a , but the dotted frame does not limit the boundary of the electroplating space.
  • the electroplating device shown in FIG. 1 may be a component module, serving as a sub-electroplating module.
  • the electroplating device may include a plurality of sub-electroplating modules 20 combined together, the structure of which is shown in FIG1 , and these sub-electroplating modules 20 may be stacked up and down and/or placed horizontally. This enables the plurality of sub-electroplating modules to be operated simultaneously during the electroplating process, thereby improving the electroplating production efficiency.
  • the sub-electroplating modules 20 may be combined in a horizontal arrangement, stacked up and down, or in a combination of horizontal arrangement and stacked up and down to form a whole.
  • the exhaust ports 1d of the sub-electroplating modules 20 stacked one above the other may be interconnected and connected to the same exhaust fan.
  • the electroplating space 1a can be obtained by opening a hole in the substrate 10.
  • the opening direction is the horizontal direction, and the horizontal direction is perpendicular to the vertical direction.
  • an opening is formed on the side of the substrate by opening the hole, and when the electroplating device shown in FIG1 is placed in the electroplating tank, the electroplating liquid flows into the electroplating space 1a from the side opening.
  • the exhaust channel 1b is embedded in the base 10, which enhances the stability of the exhaust channel 1b, improves the integration of the electroplating device, and also enhances the feasibility of the modular design of the electroplating device.
  • the air outlet 1 d of the air exhaust passage 1 b passes through the upper surface of the base 10 and is used to connect to an exhaust fan (not shown in the figure).
  • the exhaust channel 1 b has a plurality of suction ports 1 c respectively disposed on the upper surface of the cathode plate 11 , so as to form a strong adsorption on the silicon wafer 14 and prevent the silicon wafer 14 from sliding.
  • a plurality of air suction ports 1 c are evenly distributed on the upper surface of the cathode plate 11 , so that the silicon wafer 14 (as shown in FIG. 1 ) is subjected to a balanced adsorption force and has higher stability.
  • the exhaust channel 1b includes a vertical section located in the side frame of the base 10 and a horizontal section and a branch section located at the bottom of the base 10, and each molecular section forms a corresponding air suction port 1c.
  • Figure 1 is only an example, and in other embodiments, the shape and layout of the exhaust channel can be arbitrarily arranged as needed.
  • the electroplating device further includes:
  • the cathode electrode 15 is disposed in the substrate 10, one end of which is located outside the substrate 10, and the other end is electrically connected to the cathode plate 11.
  • the end of the cathode electrode 15 located outside the substrate 10 can be used to connect to a power source.
  • the cathode electrode 15 is entirely buried in the substrate 10 , the electroplating device has a higher degree of integration, and its overall movement is more convenient, thereby improving the feasibility of modular design.
  • the anode member 12 includes:
  • the anode rod 121 is disposed above the cathode plate 11 and is completely immersed in the electroplating solution during the electroplating process;
  • the anode electrode 122 is embedded in the substrate 10 , with one end located outside the substrate 10 and the other end electrically connected to the anode rod 121 .
  • the anode electrode 122 extends from the upper surface of the substrate 10 to connect to the positive electrode of the power supply.
  • the anode electrode 122 is also embedded in the substrate 10, further improving the integration of the electroplating device and enhancing the feasibility of modular assembly of the electroplating device.
  • anode rods 121 are installed side by side at the top of the electroplating space 1a.
  • the light source 16 is located at the top of the electroplating space 1a, and the light source power supply 17 is arranged in the substrate 10 and has one end extending out of the substrate 10, and the other end is located in the substrate 10 and electrically connected to the light source 16.
  • the light source 16 if the light source 16 is turned on, light-induced auxiliary electroplating can be performed on the upper surface of the solar cell silicon wafer 14, which can reduce the solar cell silicon wafer
  • the conductive resistance of the upper and lower surfaces of 14 is increased, thereby improving the uniformity and plating rate of the electroplating.
  • the light sources 16 are arranged side by side, such as being spaced apart from the anode rods 121 .
  • the electroplating device may further include:
  • the air blowing system 3 includes an air blowing channel 3a disposed in the base body 10, and the air blowing channel 3a has an air blowing port 3b and a nozzle 3c;
  • the air outlet 3b faces outside the base 10
  • the nozzle 3c is located at the edge of the cathode plate 11 and opens upward.
  • the nozzle 3c is located below the edge of the silicon wafer 14, and the air blowing system 3 continuously sprays air through the nozzle 3c at the edge of the silicon wafer 14, thereby preventing the plating liquid from contacting the cathode plate 11 and reducing the contact between the plating liquid and the edge of the silicon wafer 14, thereby reducing the occurrence of edge leakage and improving the electroplating efficiency.
  • the air blast channel 3a has a plurality of nozzles 3c closely arranged around the cathode plate 11, and two adjacent nozzles 3c form a contact seal, which can increase the area of the bubble region formed by the air jet, more effectively avoid the contact between the plating liquid and the cathode plate 11, and reduce the contact between the plating liquid and the edge of the silicon wafer 14, thereby reducing the occurrence of edge leakage and further improving the electroplating efficiency.
  • a uniformly distributed bubble area can be formed at the edge of the silicon wafer 14, further avoiding the contact between the plating solution and the cathode plate 11 while reducing the contact between the plating solution and the edge of the silicon wafer 14, thereby reducing the occurrence of edge leakage and further improving the electroplating efficiency.
  • the nozzle 3 c is not lower than the upper surface of the cathode plate 11 , so as to further prevent the electroplating solution from contacting the cathode plate 11 .
  • the nozzle 3 c is in contact and sealed with the side surface of the cathode plate 11 , which more effectively prevents the electroplating solution from contacting the cathode plate 11 .
  • the base 10 includes a top frame, and the inner surface of the top frame defines the upper boundary of the electroplating space 1a.
  • the electroplating device also includes:
  • the air guide groove 4a is provided on the inner surface of the top frame and is opposite to the nozzle 3c below.
  • the air guide groove 4a is arranged at the edge of the inner surface of the top frame so as to be opposite to the nozzle 3c below, so that during the electroplating process, the air bubbles ejected from the nozzle 3c move upward and can be discharged from the air guide groove 4a in time.
  • the disclosed embodiment also provides an electroplating device, which includes: an electroplating tank;
  • the electroplating device for solar cells in any of the above embodiments is placed in an electroplating tank, and the electroplating space is connected to the electroplating tank.
  • the electroplating space is connected to the electroplating tank, and the electroplating solution can directly flow into the electroplating space and wet the silicon wafer and the anode member, thereby performing electroplating.

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Abstract

本实用新型提供了太阳能电池的电镀装置及电镀设备，电镀装置包括：基体，设置有电镀空间；位于电镀空间内的阴极板；位于阴极板上方的阳极件；抽风系统，包括设置于基体内的抽风通道，抽风通道具有吸风口和抽风口；其中，吸风口设置于阴极板的上表面，抽风口朝向所述基体外。使用本实施例的电镀装置，采用抽风系统抽气，吸风口使得硅片下表面形成负压，硅片被抽风系统所吸附，从而避免阴极板与硅片之间发生相对移动，保持阴极板与硅片之间相对静止，从而避免因为相对运动而造成硅片表面损伤，提升电镀成品率，提升电镀装置的可行性。同时，由于硅片与阴极板之间紧密接触，避免电镀过程中电镀液渗入硅片与阴极板之间而腐蚀阴极板。

Description

太阳能电池的电镀装置及电镀设备
相关申请的交叉引用
本公开要求于2022年11月18日提交的申请号为202223064201.7、名称为“太阳能电池的电镀装置及电镀设备”的中国专利申请的优先权，该中国专利申请的全部内容通过引用全部并入本文。
技术领域
本实用新型涉及光伏技术领域，具体地说，涉及太阳能电池的电镀装置及电镀设备。
背景技术
随着光伏技术的发展，太阳能电池的光电转换效率逐渐提高，成本也逐渐降低，但是由于丝网印刷过程使用的银浆价格较高，银浆的成本约占电池非硅成本40％，使电池的成本居高不下。
在相关技术中，通过电镀技术将金属化过程中的银替换为铜等廉价金属，使电镀技术成为解决降低成本的新方法。目前，电镀技术在光伏领域的发展较快，但是由于电镀过程中的电池边缘漏电、电极打火、电极对硅片的磨损等问题仍未解决，离电镀技术的工业化应用仍有一些距离。
实用新型内容
针对现有技术中的问题，本实用新型的目的在于提供一种太阳能电池的电镀装置及电镀设备，以提升太阳能电池的电镀技术可行性。
本实用新型实施例提供一种太阳能电池的电镀装置，其包括：
基体，设置有电镀空间；
位于电镀空间内的阴极板；
位于阴极板上方的阳极件；
抽风系统，包括设置于基体内的抽风通道，抽风通道具有吸风口和抽风口；
其中，吸风口设置于阴极板的上表面，抽风口朝向基体外。
在可选实施例中，电镀空间是对基体进行开孔得到的。
在可选实施例中，抽风通道嵌入于基体内。
在可选实施例中，抽风通道具有多个分布在阴极板上表面的吸风口。
在可选实施例中，电镀装置还包括：
阴极电极，设置于基体内，其一端位于基体外，另一端与阴极板电连接。
在可选实施例中，电镀装置还包括；
鼓风系统，包括设置于基体内的鼓风通道，鼓风通道具有吹风口和喷嘴；
吹风口朝向基体外；
喷嘴位于阴极板与电镀空间的侧壁之间且开口向上。
在可选实施例中，鼓风通道具有围绕阴极板紧密排布的多个喷嘴，相邻两个喷嘴形成接触密封。
在可选实施例中，喷嘴不低于阴极板上表面。
在可选实施例中，基体包括顶框体，顶框体的内表面定义电镀空间的上方边界；电镀装置还包括：
导气槽，设置于顶框体的内表面并与下方的所述喷嘴位置相对。
在可选实施例中，阳极件包括：并列排布的阳极棒及阳极电极；
阳极棒设置于阴极板上方；
阳极电极埋设于基体内，且一端位于基体外，另一端与阳极棒电连接。
在可选实施例中，电镀装置包括多个组合在一起的子电镀模块；
每个子电镀模块包括基体、阴极板、阳极件及抽风通道。
本公开一种电镀设备，其包括：
电镀槽；
上述任一种太阳能电池的电镀装置，置于电镀槽内，电镀空间与电镀槽连通。
本实用新型所提供的太阳能电池的电镀装置及电镀设备具有如下优点：
电镀装置包括：基体，设置有电镀空间；位于电镀空间内的阴极板；位于阴极板上方的阳极件；抽风系统，包括设置于基体内的抽风通道，抽风通道具有吸风口和抽风口；其中，吸风口设置于阴极板的上表面，抽风口朝向基体外。使用本实施例的电镀装置，将太阳能电池硅片放置于阴极板上，并在电镀空间内填充电镀液，电镀液浸润阳极件及硅片。在阴极板和阳极件之间通电时，阳极件的阳离子游离到硅片表面形成导线。
在电镀过程中，采用抽风系统抽气，吸风口使得硅片下表面形成负压，硅片被抽风系统所吸附，从而避免阴极板与硅片之间发生相对移动，保持阴极板与硅片之间相对静止，从而避免因为相对运动而造成硅片表面损伤，提升电镀成品率，提升电镀装置的可行性。
同时，由于硅片与阴极板之间紧密接触，避免电镀过程中电镀液渗入硅片与阴极板之间而腐蚀阴极板。
附图说明
通过阅读参照以下附图对非限制性实施例所作的详细描述，本实用新型的其它特征、目的和优点将会变得更明显。
图1为本公开实施例提供的太阳能电池的电镀装置在水平方向上的剖面图；
图2是本公开实施例提供的太阳能电池的电镀装置在竖直方向上的剖面图；
图3为本公开实施例提供的太阳能电池的电镀装置在水平方向上的剖面图。
具体实施方式
以下通过特定的具体实例说明本申请的实施方式，本领域技术人员可由本申请所揭露的内容轻易地了解本申请的其他优点与功效。本申请还可以通过另外不同的具体实施方式加以实施或应用系统，本申请中的各项细节也可以根据不同观点与应用系统，在没有背离本申请的精神下进行各种修饰或改变。需说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。
下面以附图为参考，针对本申请的实施例进行详细说明，以便本申请所属技术领域的技术人员能够容易地实施。本申请可以以多种不同形态体现，并不限定于此处说明的实施例。
在本申请的表示中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的表示意指结合该实施例或示例表示的具体特征、结构、材料或者特点包括于本申请的至少一个实施例或示例中。而且，表示的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本申请中表示的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
此外，术语“第一”、“第二”仅用于表示目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或隐含地包括至少一个该特征。在本申请的表示中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
为了明确说明本申请，省略与说明无关的器件，对于通篇说明书中相同或类似的构成要素，赋予了相同的参照符号。
在通篇说明书中，当说某器件与另一器件“连接”时，这不仅包括“直接连接”的情形，也包括在其中间把其它元件置于其间而“间接连接”的情形。另外，当说某种器件“包括”某种构成要素时，只要没有特别相反的记载，则并非将其它构成要素排除在外，而是意味着可以还包括其它构成要素。
当说某器件在另一器件“之上”时，这可以是直接在另一器件之上，但也可以在其之间伴随着其它器件。当对照地说某器件“直接”在另一器件“之上”时，其之间不伴随其它器件。
虽然在一些实例中术语第一、第二等在本文中用来表示各种元件，但是这些元件不应当被这些术语限制。这些术语仅用来将一个元件与另一个元件进行区分。例如，第一接口及第二接口等表示。再者，如同在本文中所使用的，单数形式“一”、“一个”和“该”旨在也包括复数形式，除非上下文中有相反的指示。应当进一步理解，术语“包含”、“包括”表明存在的特征、步骤、操作、元件、组件、项目、种类、和/或组，但不排除一个或多个其他特征、步骤、操作、元件、组件、项目、种类、和/或组的存在、出现或添加。此 处使用的术语“或”和“和/或”被解释为包括性的，或意味着任一个或任何组合。因此，“A、B或C”或者“A、B和/或C”意味着“以下任一个：A；B；C；A和B；A和C；B和C；A、B和C”。仅当元件、功能、步骤或操作的组合在某些方式下内在地互相排斥时，才会出现该定义的例外。
此处使用的专业术语只用于言及特定实施例，并非意在限定本申请。此处使用的单数形态，只要语句未明确表示出与之相反的意义，那么还包括复数形态。在说明书中使用的“包括”的意义是把特定特性、区域、整数、步骤、作业、要素及/或成分具体化，并非排除其它特性、区域、整数、步骤、作业、要素及/或成分的存在或附加。
虽然未不同地定义，但包括此处使用的技术术语及科学术语，所有术语均具有与本申请所属技术领域的技术人员一般理解的意义相同的意义。普通使用的字典中定义的术语追加解释为具有与相关技术文献和当前提示的内容相符的意义，只要未进行定义，不得过度解释为理想的或非常公式性的意义。
参考图1，本公开实施例提供的太阳能电池的电镀装置包括：
基体10，设置有电镀空间1a；
位于电镀空间1a内的阴极板11；
位于阴极板11上方的阳极件12；
抽风系统13，包括设置于基体10内的抽风通道1b，抽风通道1b具有吸风口1c和抽风口1d；
其中，吸风口1c设置于阴极板11的上表面，抽风口1d朝向基体10外。
使用本实施例的电镀装置，将太阳能电池硅片14放置于阴极板11上，并在电镀空间1a内填充电镀液，电镀液浸润阳极件12及硅片14。在阴极板11和阳极件12之间通电时，阳极件12的阳离子游离到硅片14表面形成导线。
在电镀过程中，采用抽风系统13抽气，吸风口1c使得硅片14下表面形成负压，硅片14被抽风系统13所吸附，从而避免阴极板11与硅片14之间发生相对移动，保持阴极板11与硅片14之间相对静止，从而避免因为相对运动而造成硅片14表面损伤，提升电镀成品率，提升电镀装置的可行性。
同时，由于硅片14与阴极板11之间紧密接触，避免电镀过程中电镀液渗入硅片14与阴极板11之间而腐蚀阴极板11。
需呀奥说明的是，图1中虚线区域示意电镀空间1a的位置，但是虚线框不限定电镀空间的边界。
图1所示电镀装置可以是一个组成模块，作为子电镀模块。
基于模块化设计原理，如图2所示，电镀装置可以包括多个组合在一起的子电镀模块20，子电镀模块20的结构如图1所示，这些子电镀模块20可以上下叠置和/或水平放置。这能够保持多个子电镀模块在电镀过程中同时进行，提高电镀生产效率。
其中，子电镀模块20的组合方式可以是，水平排布、上下叠置、或者兼具水平排布且上下叠置，从而形成一个整体。
比如，上下叠置的子电镀模块20的抽风口1d可以相通，并连接到同一抽风机。
在本公开实施例中，如图1所示，电镀空间1a可以是对基体10进行开孔得到的。其中，开孔方向为水平方向，水平方向垂直于竖直方向。这样，通过开孔在基体侧面形成开口，在将图1所示电镀装置置于电镀槽内时，电镀液从侧面开口流入电镀空间1a内。
在本公开实施例中，抽风通道1b嵌入于基体10内，增强抽风通道1b的稳定性，提升电镀装置的集成度，也能增强电镀装置模块化设计的可行性。
如图1所示，抽风通道1b的抽风口1d从基体10的上表面穿出，用来接抽风机(图中未示出)。
抽风通道1b具有多个分别在阴极板11上表面的吸风口1c，从而能够对硅片14形成强力吸附，防止硅片14滑动。
如图3所示，多个吸风口1c在阴极板11上表面均匀分布，从而使得硅片14(如图1所示)所受到均衡吸附力，稳定性更高。
如图1所示，抽风通道1b包括，位于基体10侧框体内的竖直段及位于基体10底部的水平段及分支段，每个分子段对应形成有一个吸风口1c。图1仅为示例，在其他实施例中，可根据需要任意布置抽风通道的形状及布局。
在本公开实施例中，如图1所示，电镀装置还包括：
阴极电极15，设置于基体10内，其一端位于基体10外，另一端与阴极板11电连接。阴极电极15位于基体10外的一端可以用于连接电源。
在本实施例中，阴极电极15整体埋藏于基体10内，电镀装置集成度更高，其整体移动更便利，提升模块化设计可行性。
在本公开实施例中，阳极件12包括：
并列排布的阳极棒121及阳极电极122；
阳极棒121设置于阴极板11上方，在电镀过程中完全浸润到电镀液里；
阳极电极122埋设于基体10内，且一端位于基体10外，另一端与阳极棒121电连接。
在本实施例中，阳极电极122从基体10上表面伸出，用来接电源正极。阳极电极122也埋设于基体10内，进一步提升电镀装置集成度，增强电镀装置模块化组装的可行性。
在该实施例中，阳极棒121并排安装在电镀空间1a顶部。
如图1所示，电镀装置还包括：
光源16及光源电源17；
其中，光源16位于电镀空间1a的顶部，光源电源17设置于基体10内并具有伸出基体10外的一端，另一端位于基体10内并与光源16电连接。在电镀过程中，如果打开光源16，可以对太阳能电池硅片14上表面实施光诱导辅助电镀，可以降低太阳能电池硅片 14的上下表面的导电电阻，从而提高电镀的均匀性和电镀速率。
在本实施例中，光源16并排分布，如与阳极棒121间隔排布。
在本公开实施例中，如图1所示，电镀装置还可以包括：
鼓风系统3，包括设置于基体10内的鼓风通道3a，鼓风通道3a具有吹风口3b和喷嘴3c；
吹风口3b朝向基体10外；
喷嘴3c位于阴极板11的边缘位置且开口向上。
在本实施例中，在电镀过程中，喷嘴3c位于硅片14的边缘下方，鼓风系统3将空气通过喷嘴3c在硅片14边缘持续喷出，避免电镀液与阴极板11接触的同时，减少电镀液与硅片14边缘的接触，从而减少边缘漏电的发生，提高电镀效率。
在本公开实施例中，结合参考图3，鼓风通道3a具有围绕阴极板11紧密排布的多个喷嘴3c，相邻两个喷嘴3c形成接触密封，可以增加喷气形成的气泡区域面积，更有效避免电镀液与阴极板11接触的同时，减少电镀液与硅片14边缘的接触，从而减少边缘漏电的发生，进一步提高电镀效率。
同时，通过布置紧密排布的喷嘴3c，可以在硅片14边缘形成均匀分布的气泡区域，更进一步避免电镀液与阴极板11接触的同时，减少电镀液与硅片14边缘的接触，从而减少边缘漏电的发生，进一步提高电镀效率。
在本公开实施例中，喷嘴3c不低于阴极板11的上表面，从而能够更进一步避免电镀液与阴极板11接触。
进一步地，喷嘴3c与阴极板11的侧面接触密封，更有效避免电镀液与阴极板11接触。
在本公开实施例中，如图1所示，基体10包括顶框体，该啊顶框体的内表面定义电镀空间1a的上方边界。此时，电镀装置还包括：
导气槽4a，设置于顶框体的内表面并与下方的喷嘴3c位置相对。
导气槽4a设置于顶框体内表面的边缘，从而与下方的喷嘴3c位置相对，这样在电镀过程中，从喷嘴3c喷出的空气气泡向上运动，并能够从导气槽4a及时排出。
本公开实施例还提供一种电镀设备，其包括：电镀槽；
上述任一实施例的太阳能电池的电镀装置，置于电镀槽内，电镀空间与电镀槽连通。
在本实施例中，电镀空间与电镀槽连通，电镀液可直接流入电镀空间内，并将硅片与阳极件浸润，从而进行电镀。
以上内容是结合具体的优选实施方式对本实用新型所作的进一步详细说明，不能认定本实用新型的具体实施只局限于这些说明。对于本实用新型所属技术领域的普通技术人员来说，在不脱离本实用新型构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本实用新型的保护范围。

Claims (12)

  1. 一种太阳能电池的电镀装置，其特征在于，包括：
    基体，设置有电镀空间；
    位于电镀空间内的阴极板；
    位于所述阴极板上方的阳极件；
    抽风系统，包括设置于所述基体内的抽风通道，所述抽风通道具有吸风口和抽风口；
    其中，所述吸风口设置于所述阴极板的上表面，所述抽风口朝向所述基体外。
  2. 根据权利要求1所述的太阳能电池的电镀装置，其特征在于，所述电镀空间是对所述基体进行开孔得到的。
  3. 根据权利要求1所述的太阳能电池的电镀装置，其特征在于，所述抽风通道嵌入于所述基体内。
  4. 根据权利要求1所述的太阳能电池的电镀装置，其特征在于，所述抽风通道具有多个分布在所述阴极板上表面的所述吸风口。
  5. 根据权利要求1所述的太阳能电池的电镀装置，其特征在于，所述电镀装置还包括：
    阴极电极，设置于所述基体内，其一端位于所述基体外，另一端与阴极板电连接。
  6. 根据权利要求1所述的太阳能电池的电镀装置，其特征在于，所述电镀装置还包括；
    鼓风系统，包括设置于所述基体内的鼓风通道，所述鼓风通道具有吹风口和喷嘴；
    所述吹风口朝向所述基体外；
    所述喷嘴位于所述阴极板与电镀空间的侧壁之间且开口向上。
  7. 根据权利要求6所述的太阳能电池的电镀装置，其特征在于，所述鼓风通道具有围绕所述阴极板紧密排布的多个所述喷嘴，相邻两个所述喷嘴形成接触密封。
  8. 根据权利要求7所述的太阳能电池的电镀装置，其特征在于，所述喷嘴不低于所述阴极板上表面。
  9. 根据权利要求6所述的太阳能电池的电镀装置，其特征在于，所述基体包括顶框体，所述顶框体的内表面定义所述电镀空间的上方边界；电镀装置还包括：
    导气槽，设置于所述顶框体的内表面并与下方的所述喷嘴位置相对。
  10. 根据权利要求1所述的太阳能电池的电镀装置，其特征在于，所述阳极件包括： 并列排布的阳极棒及阳极电极；
    所述阳极棒设置于所述阴极板上方；
    所述阳极电极埋设于所述基体内，且一端位于所述基体外，另一端与所述阳极棒电连接。
  11. 根据权利要求1所述的太阳能电池的电镀装置，其特征在于，所述电镀装置包括多个组合在一起的子电镀模块；
    每个所述子电镀模块包括所述基体、阴极板、阳极件及所述抽风通道。
  12. 一种电镀设备，其特征在于，包括：
    电镀槽；
    权利要求1-11中任一项所述的太阳能电池的电镀装置，置于所述电镀槽内，所述电镀空间与电镀槽连通。
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092497A (ja) * 1983-10-27 1985-05-24 Nec Corp メツキ装置
JPH02129393A (ja) * 1988-11-07 1990-05-17 Fujitsu Ltd 半導体装置の製造方法
JPH07216585A (ja) * 1994-01-28 1995-08-15 Casio Comput Co Ltd メッキ装置
JPH11124699A (ja) * 1997-10-22 1999-05-11 Dainippon Printing Co Ltd リードフレームのめっき漏れ剥離装置および部分めっき装置
TW550675B (en) * 2001-03-12 2003-09-01 Nutool Inc Method of sealing wafer backside for full-face electrochemical plating
CN115110138A (zh) * 2022-06-29 2022-09-27 济南大学 一种碲化镉薄膜太阳能电池基片的连续电镀流水线
CN218621087U (zh) * 2022-11-18 2023-03-14 天合光能股份有限公司 太阳能电池的电镀装置及电镀设备

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092497A (ja) * 1983-10-27 1985-05-24 Nec Corp メツキ装置
JPH02129393A (ja) * 1988-11-07 1990-05-17 Fujitsu Ltd 半導体装置の製造方法
JPH07216585A (ja) * 1994-01-28 1995-08-15 Casio Comput Co Ltd メッキ装置
JPH11124699A (ja) * 1997-10-22 1999-05-11 Dainippon Printing Co Ltd リードフレームのめっき漏れ剥離装置および部分めっき装置
TW550675B (en) * 2001-03-12 2003-09-01 Nutool Inc Method of sealing wafer backside for full-face electrochemical plating
CN115110138A (zh) * 2022-06-29 2022-09-27 济南大学 一种碲化镉薄膜太阳能电池基片的连续电镀流水线
CN218621087U (zh) * 2022-11-18 2023-03-14 天合光能股份有限公司 太阳能电池的电镀装置及电镀设备

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