WO2024103717A1 - Noyau d'atomisation, atomiseur et dispositif de génération d'aérosol - Google Patents

Noyau d'atomisation, atomiseur et dispositif de génération d'aérosol Download PDF

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Publication number
WO2024103717A1
WO2024103717A1 PCT/CN2023/100851 CN2023100851W WO2024103717A1 WO 2024103717 A1 WO2024103717 A1 WO 2024103717A1 CN 2023100851 W CN2023100851 W CN 2023100851W WO 2024103717 A1 WO2024103717 A1 WO 2024103717A1
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Prior art keywords
layer
heating element
magnetron sputtering
sputtering
thickness
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PCT/CN2023/100851
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English (en)
Chinese (zh)
Inventor
邱伟华
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常州市派腾电子技术服务有限公司
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Priority claimed from CN202211450234.7A external-priority patent/CN115721053A/zh
Priority claimed from CN202223096340.8U external-priority patent/CN219422198U/zh
Application filed by 常州市派腾电子技术服务有限公司 filed Critical 常州市派腾电子技术服务有限公司
Publication of WO2024103717A1 publication Critical patent/WO2024103717A1/fr

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    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/10—Devices using liquid inhalable precursors
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
    • A24F40/46—Shape or structure of electric heating means
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/50—Control or monitoring
    • A—HUMAN NECESSITIES
    • A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
    • A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
    • A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
    • A24F40/70—Manufacture

Definitions

  • the invention belongs to the field of atomization technology, and in particular, relates to an atomization core, an atomizer and an aerosol generating device.
  • the ceramic atomization core used in the aerosol generating device usually has a heating film attached to the atomization surface of the porous ceramic.
  • the heating film heats the aerosol-forming matrix on the atomization surface, so that the aerosol-forming matrix is atomized to form an aerosol.
  • metal materials such as W
  • one of the purposes of the embodiments of the present invention is to provide an atomizer core to solve the problem in the prior art that metals such as W are used to form a heating film on porous ceramics, which requires processing to form a thicker heating film, resulting in a long processing cycle and high processing costs.
  • an atomizing core comprising:
  • a porous matrix for storing and transporting an aerosol-forming substrate
  • a heating element used for heating and atomizing the aerosol-forming matrix after being powered on
  • the heating element comprises a noble metal layer disposed on the porous substrate, the noble metal layer constituting a first heating layer of the heating element, and the thickness of the heating element is The resistance value of the heating element is 0.3-2 ⁇ .
  • the noble metal layer is an Ag layer
  • the thickness of the Ag layer is
  • the heat-generating layer also includes a bonding layer for forming a chemical bond with the porous substrate to bond the precious metal layer to the porous substrate, the bonding layer is stacked on the porous substrate, and the precious metal layer is stacked on the side of the bonding layer facing away from the porous substrate; the bonding layer is a metal layer or an alloy layer, so that the bonding layer can constitute the second heat-generating layer of the heat-generating element.
  • the noble metal layer is an Ag layer
  • the bonding layer is a NiCr alloy layer
  • the thickness of the Ag layer is The thickness of the NiCr alloy layer
  • the noble metal layer is an Au layer
  • the bonding layer is a Ti metal layer
  • the thickness of the Au layer is The thickness of the Ti metal layer
  • the atomizer core also includes an electrode, which is arranged on the noble metal layer, and the electrode is electrically connected to the noble metal layer.
  • the electrode is a noble metal electrode made of silver, palladium or silver-palladium alloy.
  • the porous matrix is at least one of porous ceramics, porous glass, porous plastic and porous metal.
  • a second purpose of the embodiments of the present invention is to provide an atomizer having an atomizer core provided by any of the above solutions.
  • the technical solution adopted by the present invention is: to provide an atomizer, comprising the atomization core provided by any of the above-mentioned solutions.
  • the third purpose of the embodiments of the present invention is to provide an aerosol generating device having an atomizing core or atomizer provided by any of the above solutions.
  • the technical solution adopted by the present invention is: to provide an aerosol generating device, including the atomizing core or the atomizer provided by any of the above-mentioned solutions.
  • the heating element in the atomizer core structure, includes a precious metal layer disposed on a porous substrate, and the precious metal layer constitutes a first heating layer of the heating element.
  • the resistance value of the heating element can be stably controlled within the range of 0.3 to 2 ⁇ , so as to achieve the purpose of reducing the thickness of the heating element and making the resistance value of the heating element within the specified resistance range.
  • the processing time of the heating element can be effectively shortened, and the target material required for processing the heating element can be reduced, so that the processing cycle of the heating element is shorter and the processing production cost is lower. Therefore, it can well overcome the defects of the prior art that the heating film is formed on the porous ceramic using metals such as W, and the thicker heating film needs to be processed, resulting in a long processing cycle and high processing production cost.
  • FIG1 is a schematic diagram of the three-dimensional structure of an atomizer core provided by an embodiment of the present invention.
  • FIG2 is an exploded view of the atomizer core shown in FIG1 ;
  • FIG3 is a schematic diagram of the three-dimensional structure of an atomizer core provided by another embodiment of the present invention.
  • FIG4 is an exploded view of the atomizer core shown in FIG3 ;
  • FIG. 5 is a schematic diagram of the three-dimensional structure of a porous matrix provided in an embodiment of the present invention.
  • the reference numerals in the figure are: 1-porous matrix; 11-liquid absorption surface; 12-liquid storage tank; 13-atomization surface; 2-heating element; 21-precious metal layer; 22-bonding layer; 3-Electrodes.
  • first and second are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated.
  • the features defined as “first” and “second” may explicitly or implicitly include one or more of the features.
  • the meaning of “multiple” is two or more, unless otherwise clearly and specifically defined.
  • the meaning of “multiple” is one or more, unless otherwise clearly and specifically defined.
  • the terms “installed”, “connected”, and “connected” should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements.
  • installed should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements.
  • the atomizer core provided by the embodiment of the present invention is used in an atomizer, which can generate heat under the electric drive of the power supply device of the aerosol generating device, and heat the aerosol-forming matrix in the liquid storage chamber of the atomizer to atomize to form an aerosol, and the aerosol-forming matrix is atomized to form an aerosol for users to inhale.
  • the atomizer core provided by the embodiment of the present invention includes a porous substrate 1 and a heating element 2.
  • the porous substrate 1 is used to store and transport an aerosol-forming matrix
  • the heating element 2 is used to heat and atomize the aerosol-forming matrix after power is turned on.
  • an atomizing surface 13 for heating and atomizing the aerosol-forming matrix is formed on the surface of the porous substrate 1. It can be understood that the atomizing surface is formed on the surface of the porous substrate 1, which means that at least part of the outer surface of the porous substrate 1 is formed with an atomizing surface, that is, the outer surface of one side or multiple sides of the porous substrate 1 are formed with an atomizing surface 13.
  • the above-mentioned at least part of the outer surface can also refer to the situation where the atomizing surface 13 is formed on part of the outer surface of one side of the porous substrate 1, that is, the area of the atomizing surface 13 is smaller than the area of the outer surface of that side.
  • the porous substrate 1 is provided with a liquid absorption surface 11, and a liquid storage tank 12 for storing aerosol-forming matrix is concavely provided on the liquid absorption surface 11.
  • the porous substrate 1 has micropores with capillary adsorption inside and/or on the surface of the porous substrate 1.
  • the porous substrate 1 can adsorb the aerosol-forming matrix through the liquid absorption surface 11, and the aerosol-forming matrix adsorbed and stored by the porous substrate 1 can be continuously transmitted to the atomization surface 13 or the heating element 2 through the micropores. Due to the provision of the liquid storage tank 12, the transmission distance of the aerosol-forming matrix to the atomization surface 13 or the heating element 2 can be shortened, which is conducive to fully and quickly supplying liquid to the heating element 2 to avoid dry burning of the heating element 2.
  • the above-mentioned porous substrate 1 can be, but is not limited to, porous ceramics, porous glass, porous plastics, porous fibers or porous metals, etc.
  • the porosity range of the porous ceramic can be but not limited to 45-65%, further 45%-52.08%, the pore size of the micropores of the porous ceramic can be but not limited to 25-31.33 ⁇ m, the specific surface area of the porous ceramic can be but not limited to 0.037-0.049 m2/g, further 0.04-0.0433 m2/g, the static density is 1.52-1.64 g/cm3, the specific pore volume is 0.28-0.36 ml/g, and the median pore diameter is 15-40 ⁇ m.
  • the heating element 2 includes a noble metal layer 21 disposed on the porous substrate 1 , the noble metal layer 21 constitutes the first heating layer of the heating element 2 , and the thickness of the heating element 2 is The resistance value of the heating element 2 is 0.3 to 2 ⁇ . According to the resistance calculation formula, the resistance of the heating element 2 is The thickness and conductivity determine the resistance value of the heating element 2. When the conductivity of the heating element 2 is constant, the thinner the thickness of the heating element 2, the greater the resistance value, and the thicker the thickness of the heating element 2, the smaller the resistance value. Therefore, the thickness of the heating element 2 can be adjusted and controlled to achieve the purpose of adjusting the resistance value of the heating element 2.
  • the commonly used resistance of the heating element 2 is 0.2 ⁇ 2 ⁇ .
  • the resistance value of the heating element 2 is controlled within 0.3 ⁇ 2 ⁇ .
  • the first heating layer of the heating element 2 is formed by using the precious metal layer 21. Since the resistivity of the precious metal is relatively small, the thickness of the heating element 2 only needs to be set at This can meet the specification requirement of controlling the resistance value of the heating element 2 to 0.3-2 ⁇ .
  • the thickness of the heating element 2 is set at The thickness of the heating element 2 is within a relatively thin thickness range; on the one hand, the time required to form the heating element 2 is relatively short, thereby greatly improving the production efficiency; on the other hand, the stress of the heating element 2 is reduced accordingly, thereby preventing the microstructure of the heating element 2 from being damaged during the use of electricity, thereby affecting the stability of the resistance value of the heating element 2; on the other hand, the target material required for the processed heating element 2 is also reduced accordingly, thereby greatly reducing the production cost.
  • a precious metal is selected as the first heating layer of the heating element 2, and the thickness of the heating element 2 is set at That is, the resistance of the heating element 2 is within the specified resistance range.
  • the thickness of the heating element 2 is greatly reduced, the processing time of the heating element 2 can be effectively shortened, and the materials required for processing and forming the heating element 2 can be reduced, thereby shortening the processing cycle of the heating element 2 and reducing the processing and production cost. Therefore, the defects of the prior art that a heating film is formed on porous ceramics using metals such as W, which requires processing to form a thick heating film, resulting in a long processing cycle and high processing and production cost are well overcome.
  • the atomizer core preparation method provided by the embodiment of the present invention has a structure in which the heating element 2 includes a precious metal layer 21 disposed on the porous substrate 1, and the precious metal layer 21 constitutes the first heating layer of the heating element 2, so as to form the heating element 2 including the precious metal layer 21 on the porous substrate 1.
  • the thickness of the heating element 2 only needs to be controlled within
  • the resistance value of the heating element 2 can be stably controlled within the range of 0.3 to 2 ⁇ , so as to achieve the purpose of reducing the thickness of the heating element 2 and making the resistance value of the heating element 2 within the specified resistance range, which can effectively shorten the processing time of the heating element 2 and reduce the target material required for processing the heating element 2, thereby making the processing cycle of the heating element 2 shorter and the processing production cost lower. Therefore, it can well overcome the defects of the prior art that the heating film is formed on the porous ceramic using metals such as W, and the thicker heating film needs to be processed, resulting in a long processing cycle and high processing production cost.
  • the noble metal layer 21 is an Ag layer, and the thickness of the Ag layer is In this embodiment, a noble metal Ag material with low conductivity is used. Since the noble metal Ag material has low conductivity, the thickness of the heating element 2 is set at That is, the resistance of the heating element 2 is within the specified resistance range, which is beneficial to shorten the processing cycle of the heating element 2 and reduce the processing and production cost of the heating element 2.
  • the thickness of the Ag layer is greater than When the resistance value of the heating element 2 is less than 0.3 ⁇ , and the thickness of the Ag layer is less than When the resistance value of the heating element 2 is greater than 2 ⁇ , the resistance of the heating element 2 cannot be within the specified resistance range, so that the heating element 2 cannot achieve the function of heating the atomized aerosol to form the matrix.
  • the heating layer also includes a bonding layer 22 for bonding the precious metal layer 21 to the porous substrate 1.
  • the bonding layer 22 is stacked on the porous substrate 1, and the precious metal layer 21 is stacked on the side of the bonding layer 22 facing away from the porous substrate 1.
  • the bonding layer 22 can form chemical bonds with the porous substrate 1 and the precious metal layer 21, respectively, to enhance the stability of the precious metal layer 21 bonded to the porous substrate 1.
  • the bonding layer 22 is a metal layer or an alloy layer, so that the bonding layer 22 can constitute the second heating layer of the heating element 2. Examples of materials for forming the metal layer or the alloy layer include metal elements such as Ti, Cr, Ni, and alloys thereof.
  • Bonding layer 22 can form chemical bonds with the porous substrate 1 and the noble metal layer 21 respectively, which can be but not limited to at least one of metallic bonds, covalent bonds and ionic bonds.
  • the noble metal layer 21 is an Ag layer
  • the bonding layer 22 is a NiCr alloy layer
  • the thickness of the Ag layer is The thickness of the NiCr alloy layer is
  • a NiCr alloy layer is used as the bonding layer 22, and the thickness of the NiCr alloy layer is It is possible to enhance the stability of the Ag layer bonded to the porous substrate 1. It should be noted that when the thickness of the NiCr alloy layer is less than When the thickness of the NiCr alloy layer is greater than Although the bonding strength between the NiCr alloy layer and the Ag layer can be further improved, it is not conducive to reducing the thickness of the heating element 2.
  • the thickness of the NiCr alloy layer is limited to In this embodiment, a noble metal Ag material with low conductivity is used. Since the conductivity of the noble metal Ag material is low, based on the use of the NiCr alloy layer as the bonding layer 22, it is only necessary to set the thickness of the noble metal Ag layer to That is, the resistance of the heating element 2 is within the specified resistance range, which is beneficial to further shorten the processing cycle of the heating element 2 and reduce the processing and production cost of the heating element 2.
  • the thickness of the Ag layer is greater than When the resistance value of the heating element 2 is less than 0.3 ⁇ , and the thickness of the Ag layer is less than When the resistance value of the heating element 2 is greater than 2 ⁇ , the resistance of the heating element 2 cannot be within the specified resistance range, so that the heating element 2 cannot achieve the function of heating the atomized aerosol to form the matrix.
  • the noble metal layer 21 is an Au layer
  • the bonding layer 22 is a Ti metal layer
  • the thickness of the Au layer is The thickness of the Ti metal layer.
  • a Ti metal layer is used as the bonding layer 22, and the thickness of the Ti metal layer is This can not only enhance the stability of the Au layer bonded to the porous substrate 1, but also further reduce the thickness of the bonding layer 22. It should be noted that when the thickness of the Ti metal layer is less than When the thickness of the Ti metal layer is greater than Although the bonding strength of the Ti metal layer and the Au layer can be further improved, it is not conducive to the thickness reduction of the heating element 2.
  • the Ti The thickness of the metal layer is limited to In this embodiment, a noble metal Au material with low conductivity is used. Since the noble metal Au material has low conductivity, on the basis of using a Ti metal layer as the bonding layer 22, it is only necessary to set the thickness of the noble metal Au layer to This means that the resistance of the heating element 2 is within the specified resistance range, which is beneficial to further shorten the processing cycle of the heating element 2 and reduce the processing and production cost of the heating element 2.
  • the thickness of the Au layer is greater than When the resistance value of the heating element 2 is less than 0.3 ⁇ , and when the thickness of the Au layer is less than When the resistance value of the heating element 2 is greater than 2 ⁇ , the resistance of the heating element 2 cannot be within the specified resistance range, so that the heating element 2 cannot achieve the function of heating the atomized aerosol to form the matrix.
  • the atomizer core also includes an electrode 3 for electrically connecting a lead or a conductive spring pin.
  • the electrode 3 is arranged on the porous substrate 1 or the precious metal layer 21 of the heating element 2.
  • the electrode 3 is electrically connected to the precious metal layer 21.
  • the precious metal layer 21 of the heating element 2 can be electrically connected to the power supply device through the electrode 3 to supply power to the precious metal layer 21 of the heating element 2 through the power supply device.
  • the electrodes 3 are arranged in pairs, and the electrodes 3 can be, but are not limited to, precious metal electrodes made of precious metal materials such as silver, palladium or silver-palladium alloy.
  • the precious metal electrode can be a precious metal electrode layer formed on the precious metal layer 21 of the heating element 2 by a magnetron sputtering process, so that the precious metal electrode forms a chemical bond with the precious metal layer 21, thereby enhancing the firmness of the combination of the precious metal electrode and the precious metal layer 21.
  • the embodiment of the present invention further provides an atomizer, which includes the atomizer core provided by any of the above embodiments. Since the atomizer has all the technical features of the atomizer core provided by any of the above embodiments, it has the same technical effects as the atomizer core.
  • the embodiment of the present invention also provides an aerosol generating device, which includes the atomizing core provided by any of the above embodiments or the atomizer provided by any of the above embodiments. Since the aerosol generating device has all the technical features of the atomizing core or the atomizer provided by any of the above embodiments, it has the same technical effects as the atomizing core.
  • the atomizer core provided in the embodiment of the present invention is made by the following atomizer core preparation method, which includes the following steps:
  • Step S01 placing the porous substrate 1 into a magnetron sputtering machine and preheating it under vacuum conditions.
  • Step S02 Depositing a noble metal layer 21 on the porous substrate 1 by magnetron sputtering process, wherein the sputtering power of magnetron sputtering is 50-150 W, the total sputtering time of magnetron sputtering is 54-106 minutes, the sputtering temperature of magnetron sputtering is 25-28° C., and the sputtering pressure of magnetron sputtering is 2-3 mt.
  • an embodiment of the present invention further provides a method for preparing an atomizer core provided in any of the above embodiments, which comprises the following steps:
  • Step S01 placing the porous substrate 1 into a magnetron sputtering machine and preheating it under vacuum conditions.
  • Step S02 depositing a bonding layer 22 on the porous substrate 1 by a magnetron sputtering process, the bonding layer 22 being a metal layer or an alloy layer, and forming a chemical bond between the bonding layer 22 and the porous substrate 1.
  • the sputtering power of the magnetron sputtering is 50 to 150 W
  • the total sputtering time of the magnetron sputtering is 40 to 106 minutes
  • the sputtering temperature of the magnetron sputtering is 25 to 28° C.
  • the sputtering pressure of the magnetron sputtering is 2 to 3 mt.
  • Step S03 Depositing the noble metal layer 21 on the bonding layer 22 by magnetron sputtering process, the noble metal layer 21 forms a chemical bond with the bonding layer 22.
  • the sputtering power of the magnetron sputtering is 50-150W
  • the total sputtering time of the magnetron sputtering is 54-106 minutes
  • the sputtering temperature of the magnetron sputtering is 25-28°C
  • the sputtering pressure of the magnetron sputtering is 2-3mt.
  • the method for preparing the atomizer core in the embodiment of the present invention adopts the magnetron sputtering process in the thin film physical phase deposition process to magnetron sputter the precious metal target material on the porous substrate 1 to form a heating element 2 including a precious metal layer 21 on the porous substrate 1, so that the resistance value of the heating element 2 can be controlled within the range of 0.3 to 2 ⁇ , and the thickness of the heating element 2 can be controlled within Within the range of , the thickness of the heating element 2 can be significantly reduced, which can effectively shorten the processing time of the heating element 2 and reduce the target material required for processing the heating element 2, thereby shortening the processing cycle of the heating element 2 and reducing the processing production cost.
  • the atomization core preparation method in the embodiment of the invention of the present invention adopts the magnetron sputtering process in the thin film physical phase deposition process to magnetron sputter the precious metal target material on the porous substrate 1 to form a heating element 2 including a precious metal layer 21 on the porous substrate 1, so as to facilitate the coordinated regulation of the thickness and resistance value of the heating element 2, and on the basis of effectively reducing the thickness of the heating element 2, the resistance of the heating element 2 is within the usage specification. It is within a certain resistance range and has a good heating atomization effect.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; and a Ag layer is deposited on the porous substrate 1 through a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 50 W, the total sputtering time of the magnetron sputtering is 80 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; and a Ag layer is deposited on the porous substrate 1 through a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 55 W, the total sputtering time of the magnetron sputtering is 93 minutes, the sputtering temperature of the magnetron sputtering is 27° C., and the sputtering pressure of the magnetron sputtering is 2.5 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; and a Ag layer is deposited on the porous substrate 1 through a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 60 W, the total sputtering time of the magnetron sputtering is 106 minutes, the sputtering temperature of the magnetron sputtering is 28° C., and the sputtering pressure of the magnetron sputtering is 2 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a NiCr layer is deposited on the porous substrate 1 through a magnetron sputtering process, the sputtering power of the magnetron sputtering is 60 W, the total sputtering time of the magnetron sputtering is 30 minutes, the sputtering temperature of the magnetron sputtering is 25°C, and the sputtering pressure of the magnetron sputtering is 3mt.
  • the Ag layer is deposited on the NiCr layer, the sputtering power of the magnetron sputtering is 40 W, the total sputtering time of the magnetron sputtering is 36 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a NiCr layer is deposited on the porous substrate 1 through a magnetron sputtering process, the sputtering power of the magnetron sputtering is 80 W, the total sputtering time of the magnetron sputtering is 36 minutes, the sputtering temperature of the magnetron sputtering is 27°C, and the sputtering pressure of the magnetron sputtering is 2.5 mt.
  • the Ag layer was deposited on the NiCr layer, the sputtering power of the magnetron sputtering was 50 W, the total sputtering time of the magnetron sputtering was 40 minutes, the sputtering temperature of the magnetron sputtering was 27° C., and the sputtering pressure of the magnetron sputtering was 2.5 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a NiCr layer is deposited on the porous substrate 1 through a magnetron sputtering process, the sputtering power of the magnetron sputtering is 100 W, the total sputtering time of the magnetron sputtering is 39 minutes, the sputtering temperature of the magnetron sputtering is 28°C, and the sputtering pressure of the magnetron sputtering is 2mt.
  • the Ag layer is deposited on the NiCr layer, the sputtering power of the magnetron sputtering is 60 W, the total sputtering time of the magnetron sputtering is 43 minutes, the sputtering temperature of the magnetron sputtering is 28° C., and the sputtering pressure of the magnetron sputtering is 2 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a Ti layer is deposited on the porous substrate 1 through a magnetron sputtering process, the sputtering power of the magnetron sputtering is 100 W, the total sputtering time of the magnetron sputtering is 20 minutes, the sputtering temperature of the magnetron sputtering is 25°C, and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the Ag layer was deposited on the NiCr layer, the sputtering power of the magnetron sputtering was 40 W, the total sputtering time of the magnetron sputtering was 20 minutes, the sputtering temperature of the magnetron sputtering was 25° C., and the sputtering pressure of the magnetron sputtering was 3 mt.
  • the Ag layer was deposited on the NiCr layer, the sputtering power of the magnetron sputtering was 45 W, the total sputtering time of the magnetron sputtering was 25 minutes, the sputtering temperature of the magnetron sputtering was 27° C., and the sputtering pressure of the magnetron sputtering was 2.5 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a Ti layer is deposited on the porous substrate 1 through a magnetron sputtering process, the sputtering power of the magnetron sputtering is 150 W, the total sputtering time of the magnetron sputtering is 26 minutes, the sputtering temperature of the magnetron sputtering is 28°C, and the sputtering pressure of the magnetron sputtering is 2mt.
  • the Ag layer was deposited on the NiCr layer, the sputtering power of the magnetron sputtering was 50 W, the total sputtering time of the magnetron sputtering was 28 minutes, the sputtering temperature of the magnetron sputtering was 28° C., and the sputtering pressure of the magnetron sputtering was 2 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 250 W, the total sputtering time of the magnetron sputtering is 250 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 300 W, the total sputtering time of the magnetron sputtering is 300 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 400 W, the total sputtering time of the magnetron sputtering is 350 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; Process, depositing a W layer on the porous substrate 1.
  • the sputtering power of the magnetron sputtering is 250 W
  • the total sputtering time of the magnetron sputtering is 250 minutes
  • the sputtering temperature of the magnetron sputtering is 25° C.
  • the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 300 W, the total sputtering time of the magnetron sputtering is 300 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a W layer is deposited on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 400 W, the total sputtering time of the magnetron sputtering is 350 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a TiW layer is deposited on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 250 W, the total sputtering time of the magnetron sputtering is 250 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a TiW layer is deposited on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 300 W, the total sputtering time of the magnetron sputtering is 300 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; Process, depositing a TiW layer on the porous substrate 1.
  • the sputtering power of the magnetron sputtering is 400 W
  • the total sputtering time of the magnetron sputtering is 350 minutes
  • the sputtering temperature of the magnetron sputtering is 25° C.
  • the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a NiCr layer is deposited on the porous substrate 1 through a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 250 W, the total sputtering time of the magnetron sputtering is 250 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a NiCr layer is deposited on the porous substrate 1 through a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 300 W, the total sputtering time of the magnetron sputtering is 300 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the porous substrate 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions; a NiCr layer is deposited on the porous substrate 1 through a magnetron sputtering process, wherein the sputtering power of the magnetron sputtering is 400 W, the total sputtering time of the magnetron sputtering is 350 minutes, the sputtering temperature of the magnetron sputtering is 25° C., and the sputtering pressure of the magnetron sputtering is 3 mt.
  • the heating element 2 in the above-mentioned embodiments 1 to 9 and comparative examples 1 to 12 was tested for resistance and thickness respectively.
  • the embodiments and comparative examples of the present application were coated on porous ceramics, and the resistance of the coating on the porous ceramics was tested using a multimeter.
  • a standard sample of the commonly used resistance value of the heating element 2 was used for comparison, and the resistance value of the standard sample was 0.2 to 2 ⁇ .
  • the relevant test data is shown in Table 1.
  • the resistance value of the heating element 2 in Examples 1 to 9 is 0.3-2 ⁇
  • the thickness is The resistance value of the heating element 2 in Comparative Examples 4 to 12 is 2.4-14 ⁇
  • the thickness is The heating element 2 is formed by coating the porous ceramic.
  • the heating element 2 in Examples 1 to 9 has the advantage of being thinner and having a resistance value that meets the requirements of the commonly used resistance value range.
  • the heating element 2 in Comparative Examples 4 to 12 is relatively thick. And the resistance value does not meet the requirements of the commonly used resistance range.

Landscapes

  • Resistance Heating (AREA)

Abstract

Noyau d'atomisation, atomiseur et dispositif de génération d'aérosol. Un élément chauffant (2) dans la structure du noyau d'atomisation comprend une couche de métal noble (21) placée sur un substrat poreux (1), la couche de métal noble (21) constituant une première couche chauffante de l'élément chauffant (2), de façon à former l'élément chauffant (2) comprenant la couche de métal noble (21) sur le substrat poreux (1). La valeur de résistance de l'élément chauffant peut être régulée de manière stable dans la plage de 0,3 à 2 Ω simplement en commandant l'épaisseur de l'élément chauffant dans la plage de 3 900 à 20 400 Å, de façon à atteindre les objectifs de réduction de l'épaisseur de l'élément chauffant et de maintien de la valeur de résistance de l'élément chauffant dans la plage de résistance spécifiée pour une utilisation, raccourcissant efficacement le temps de traitement et de formation de l'élément chauffant et réduisant un matériau cible requis pour le traitement et la formation de l'élément chauffant, raccourcissant ainsi la période de traitement et abaissant le coût de traitement et de production de l'élément chauffant. Le noyau d'atomisation facilite la régulation et la commande coordonnées de l'épaisseur et de la valeur de résistance de l'élément chauffant, ce qui permet de réduire l'épaisseur de l'élément chauffant dans la plage de résistance spécifiée pour une utilisation.
PCT/CN2023/100851 2022-11-19 2023-06-16 Noyau d'atomisation, atomiseur et dispositif de génération d'aérosol WO2024103717A1 (fr)

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CN202211450234.7 2022-11-19
CN202223096340.8U CN219422198U (zh) 2022-11-19 2022-11-19 雾化芯、雾化器及气溶胶发生装置

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CN113749298A (zh) * 2020-06-01 2021-12-07 深圳市合元科技有限公司 加热器以及气溶胶生成装置
CN113826962A (zh) * 2021-09-22 2021-12-24 东莞市维万特智能科技有限公司 雾化芯、雾化器、气溶胶发生装置及雾化芯制备方法
US20220039470A1 (en) * 2018-09-28 2022-02-10 Philip Morris Products S.A. Heater assembly for an aerosol-generating system
CN114287676A (zh) * 2022-01-17 2022-04-08 海宁新纳陶科技有限公司 具有金属镀膜层的陶瓷雾化芯及其制备方法
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CN115721053A (zh) * 2022-11-19 2023-03-03 深圳市卓尔悦电子科技有限公司 雾化芯、雾化器、气溶胶发生装置及雾化芯制备方法

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US20220039470A1 (en) * 2018-09-28 2022-02-10 Philip Morris Products S.A. Heater assembly for an aerosol-generating system
CN112251723A (zh) * 2019-07-04 2021-01-22 深圳麦克韦尔科技有限公司 发热体及其制备方法、电子烟具
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