WO2024093124A1 - Switch standard unit, switch, and layout design method - Google Patents

Switch standard unit, switch, and layout design method Download PDF

Info

Publication number
WO2024093124A1
WO2024093124A1 PCT/CN2023/086028 CN2023086028W WO2024093124A1 WO 2024093124 A1 WO2024093124 A1 WO 2024093124A1 CN 2023086028 W CN2023086028 W CN 2023086028W WO 2024093124 A1 WO2024093124 A1 WO 2024093124A1
Authority
WO
WIPO (PCT)
Prior art keywords
switch
unit
connection structure
power wiring
standard
Prior art date
Application number
PCT/CN2023/086028
Other languages
French (fr)
Chinese (zh)
Inventor
王宇哲
Original Assignee
长鑫存储技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 长鑫存储技术有限公司 filed Critical 长鑫存储技术有限公司
Publication of WO2024093124A1 publication Critical patent/WO2024093124A1/en

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • G06F30/392Floor-planning or layout, e.g. partitioning or placement
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • G06F30/394Routing
    • G06F30/3947Routing global
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • G06F30/394Routing
    • G06F30/3953Routing detailed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

Definitions

  • the present disclosure relates to but is not limited to a switch standard unit, a switch, and a layout design method.
  • Integrated circuit design can usually be divided into full custom design and semi-custom design.
  • Full custom design can better improve device performance, but it is time-consuming and difficult to fully realize automated design.
  • Semi-custom design can be based on gate arrays or standard cell libraries to achieve fully automated design. Therefore, designs based on gate arrays or standard cell libraries can improve layout design efficiency.
  • An embodiment of the present disclosure provides a switch standard unit, comprising: a switch input portion, a switch output portion, and a connection portion disposed in a frame area;
  • the switch input portion and the switch output portion are arranged in the same layer and extend in a first direction;
  • connection part is arranged in different layers with the switch input part and the switch output part, and includes a first connection structure and a second connection structure arranged at intervals along the first direction and both extending in the second direction; the first connection structure is connected to the switch input part, and the second connection structure is connected to the switch output part.
  • the frame region includes a first frame unit and a second frame unit arranged along the second direction;
  • the switch input part is located in the first frame unit, and the switch output part is located in the second frame unit; a part of the first connecting structure is located in the first frame unit, and another part is located in the second frame unit; a part of the second connecting structure is located in the first frame unit, and another part is located in the second frame unit.
  • the switch input portion is connected to the first connection structure through a first conductive via
  • the switch output portion is connected to the second connection structure through a second conductive via
  • the shortest distance between the edge of the first conductive via in the first direction and the edge of the first connecting structure in the first direction is greater than or equal to the first preset distance; the shortest distance between the edge of the first conductive via in the second direction and the edge of the first connecting structure in the second direction is greater than or equal to the second preset distance;
  • the shortest distance between the edge of the second conductive hole in the first direction and the edge of the second connecting structure in the first direction is greater than or equal to the first preset distance; the shortest distance between the edge of the second conductive hole in the second direction and the edge of the second connecting structure in the second direction is greater than or equal to the second preset distance.
  • a minimum distance between the first connection structure and the second connection structure in the first direction is greater than or equal to a third preset distance.
  • the standard cell includes a first power wiring portion and a second power wiring portion that are arranged at intervals in the first direction and extend along the second direction;
  • the switch input portion, the switch output portion, and the connection portion are located between the first power wiring portion and the second power wiring portion.
  • the first power wiring portion, the second power wiring portion, and the connection portion are arranged in the same layer.
  • An embodiment of the present disclosure provides a switch, comprising a switch input portion, a switch output portion, and a connecting portion disposed on a substrate;
  • the switch input portion and the switch output portion are arranged in the same layer and extend in a first direction;
  • connection part is arranged in different layers with the switch input part and the switch output part, and includes a first connection structure and a second connection structure arranged at intervals along the first direction and both extending in the second direction; the first connection structure is connected to the switch input part, and the second connection structure is connected to the switch output part.
  • the switch input portion and the switch output portion are located in a first metal layer, and the connecting portion is located in a second metal layer that is farther away from the substrate than the first metal layer.
  • An embodiment of the present disclosure provides a layout design method, including:
  • circuit schematic diagram comprising at least one switch and at least one gate-level circuit unit
  • connection relationship includes at least one of a connection relationship between a switch and a gate-level circuit unit, a connection relationship between a plurality of switches, and a connection relationship between a plurality of gate-level circuit units;
  • the switch standard unit involved in the above embodiment and the standard unit corresponding to the gate-level circuit unit are called for splicing according to the connection relationship;
  • the switch standard unit involved in the above embodiment is called according to the connection relationship to splice the standard unit corresponding to the gate-level circuit unit, and a bridge portion is arranged between the first connection structure and the second connection structure so that the first connection structure and the second connection structure are connected through the bridge portion.
  • the bridge portion is disposed in the same layer as the first connection structure and the second connection structure.
  • obtaining the connection relationship and the state of the switch according to the circuit schematic diagram specifically includes:
  • a gate-level netlist is obtained according to the circuit schematic, and a connection relationship and a state of a switch are determined according to the gate-level netlist.
  • a minimum distance between connection portions of the two switch standard units is greater than or equal to a fourth preset distance.
  • a circuit schematic when a circuit schematic includes a plurality of switches and any two switches are connected, the two switches are connected via wiring disposed in the polysilicon layer.
  • the standard unit corresponding to the gate-level circuit unit includes a third power wiring portion and a fourth power wiring portion, and the interval between the third power wiring portion and the fourth power wiring portion is the same as the interval between the first power wiring portion and the second power wiring portion in the switch standard unit; when the switch standard unit and the standard unit corresponding to the gate-level circuit unit are spliced, the first power wiring portion and the third power wiring portion are aligned and spliced so that the two are connected, and the second power wiring portion and the fourth power wiring portion are aligned and spliced so that the two are connected.
  • the switch standard unit, switch and layout design method provided by the present disclosure include a frame area and a switch input part, a switch output part and a connection part arranged in the frame area.
  • the connection part includes a first connection structure and a second connection structure arranged at intervals in a first direction.
  • the first connection structure connects the switch input part
  • the second connection structure connects the switch output part.
  • the switch input part serves as one end of the switch standard unit
  • the switch output part serves as the other end of the switch standard unit.
  • the layout structure design of the switch standard unit corresponding to the switch in the disconnected state is realized, which facilitates the use of automatic tools to automatically layout and route the switch standard unit, greatly reduces the design time during the initial layout design, and quickly solves the design problem.
  • the switch input part and the switch output part are extended in the first direction, so that the first connection structure is connected to the first connection structure.
  • the first connection structure and the second connection structure extend in the second direction, which are both helpful to simplify the wiring when automatically generating the layout of the integrated circuit.
  • the switch standard unit can be modified according to the disconnection or connection state of the switch during layout design. When modifying, only a bridge portion needs to be set between the first connection structure and the second connection structure. After modification, the metal layer design rules can still be met, and there will be no short circuit problem. Moreover, the modification involves only one layer of metal, which reduces the revision level.
  • FIG1 is a circuit diagram of an inverter
  • FIG2 is a schematic diagram of a layout of a standard unit corresponding to an inverter
  • FIG3 is a schematic diagram of a layout of a switch standard unit provided by the present disclosure.
  • FIG4 is a schematic diagram of a layout of another switch standard unit provided by the present disclosure.
  • FIG5 is a circuit diagram of the switch standard unit provided in FIG3 ;
  • FIG6 is a circuit diagram of the switch standard unit provided in FIG4 ;
  • FIG7 is a schematic diagram of the connection between the standard unit corresponding to the inverter and the switch standard unit provided by the present disclosure
  • FIG8 is a schematic diagram of the structure of a switch provided by the present disclosure.
  • FIG9 is a schematic diagram of a flow chart of a layout design method provided by the present disclosure.
  • FIG10 is a circuit schematic diagram of an integrated circuit provided by the present disclosure.
  • FIG11 is a schematic diagram of a layout of an integrated circuit provided by the present disclosure.
  • switch standard unit 101, frame area; 1011, first frame unit; 1012, second frame unit; 102, switch input unit; 103, switch output unit; 104, connection unit; 1041, first connection structure; 1042, second connection structure; 105, first power wiring unit; 106, second power wiring unit; 107, first conductive hole; 108, second conductive hole; 109, bridge unit; 110, substrate; 131, switch standard unit corresponding to the first switch; 131, switch standard unit corresponding to the second switch; 133, switch standard unit corresponding to the third switch; 134, switch standard unit corresponding to the fourth switch;
  • a first P-type transistor region 211, a first P-type doping region; 212, a second P-type doping region; 213, a first source portion; 214, a first drain portion; 215, a first gate portion; 221, a first contact plug; 222, a second contact plug; 223, a third contact plug; 224, a fourth contact plug; 225, a fifth contact plug; 226, a sixth contact plug; 231, a third conductive hole; 232, a fourth conductive hole; 233, a fifth conductive hole;
  • a first N-type transistor region 311, a first N-type doping region; 312, a second N-type doping region; 313, a second source portion; 314, a second drain portion; 315, a second gate portion; 321, a seventh contact plug; 322, an eighth contact plug; 323, a ninth contact plug; 324, a tenth contact plug; 325, an eleventh contact plug; 326, a twelfth contact plug; 331, a sixth conductive hole; 332, a seventh conductive hole; 333, an eighth conductive hole; 401, a first wiring portion; 402, a second wiring portion; 403, a thirteenth contact plug; 404, a fourteenth contact plug;
  • Full-custom design is a design method based on the transistor level, in which all components, interconnections and layouts of the circuit are directly designed. For example: for each transistor, its unique aspect ratio and other parameters are customized; for each critical path, the specific parasitic dispersion parameters are adjusted by adjusting the polysilicon doping concentration or metal material, width and other parameters of the wiring.
  • Standard cell libraries are the basis of automated design of VLSI.
  • Standard cell library refers to some basic logic units in circuit design, such as gate circuits, multi-way switches, triggers, etc., which are pre-designed according to the best design principles and placed in the standard cell library.
  • circuit design such as gate circuits, multi-way switches, triggers, etc.
  • When performing integrated design it is only necessary to call the required standard cells from the standard cell library according to the circuit requirements, perform automatic logic synthesis and automatic layout and routing, and improve design efficiency.
  • the design of a standard cell library usually includes the following processes:
  • the design of the standard cell library This means determining the technical indicators of the basic logic cells in the standard cell library according to the purpose of the standard cell library and the process it is targeting. For example: the basic design size of the basic logic cell, the maximum operating frequency of the basic logic cell, the power consumption of the basic logic cell, etc.
  • the circuit design of the standard cell library refers to designing device sizes with different driving capabilities according to the requirements of various technical indicators of the basic logic unit.
  • the layout design of the standard cell library refers to determining the basic parameters of the layout design based on the relevant process parameters and the technical indicators of the basic logic cells in the standard cell library, such as: the cell height, line width, number of lines, and area division of the layout design.
  • the layout design of the standard cell library is optimized, such as area and performance optimization.
  • the height of each cell needs to meet the metal layer design rules.
  • the following describes a layout of a standard cell of an inverter, which is stored in a standard cell library. If an integrated circuit includes an inverter, when designing the layout of the integrated circuit based on the circuit schematic of the integrated circuit, the standard cell of the inverter in the standard cell library can be directly called for automatic logic synthesis and automatic layout and routing to generate the layout of the integrated circuit.
  • FIG1 is a circuit diagram of an inverter, wherein the inverter includes a first P-type transistor P1 and a first N-type transistor N1, wherein the source of the first P-type transistor P1 is connected to a first power supply, the source of the first N-type transistor N1 is connected to a second power supply, and the gate of the first P-type transistor P1 is connected to the gate of the first N-type transistor N1 as an input terminal In of the inverter.
  • the drain of the P-type transistor P1 is connected to the drain of the first N-type transistor N1 to serve as the output terminal Out of the inverter.
  • the voltage provided by the first power supply is the power supply voltage VCC
  • the voltage provided by the second power supply is the ground voltage VSS.
  • a standard unit of an inverter includes an inverter frame region 600 and a first P-type transistor region 200 , a first N-type transistor region 300 , a first wiring portion 401 and a second wiring portion 402 located in the inverter frame region 600 .
  • the first P-type transistor region 200 and the first N-type transistor region 300 are arranged on both sides of the inverter frame region 600.
  • the first wiring portion 401 and the second wiring portion 402 are arranged in the middle of the inverter frame region 600.
  • the first P-type transistor region 200 includes a first P-type doping region 211 , a second P-type doping region 212 , a first source portion 213 , a first drain portion 214 , and a first gate portion 215 .
  • the first P-type doping region 211 and the second P-type doping region 212 are located at both sides of the first gate portion 215 , the first source portion 213 is located above the first P-type doping region 211 , and the first drain portion 214 is located above the second P-type doping region 212 .
  • the first source portion 213 and the first P-type doping region 211 are in contact with each other through the first contact plug 221 , the second contact plug 222 and the third contact plug 223 , and the first drain portion 214 and the second P-type doping region 212 are in contact with each other through the fourth contact plug 224 , the fifth contact plug 225 and the sixth contact plug 226 .
  • the first source portion 213 serves as the source of the first P-type transistor P1, and the first drain portion 214 serves as the drain of the first P-type transistor P1.
  • a third power wiring portion 501 is further provided above the first source portion 213 and the first drain portion 214.
  • the first source portion 213 is connected to the third power wiring portion 501 through the third conductive via 231, the fourth conductive via 232, and the fifth conductive via 233, so that the source of the first P-type transistor P1 is connected to the first power supply.
  • the first N-type transistor region 300 includes a first N-type doping region 311 , a second N-type doping region 312 , a second source portion 313 , a second drain portion 314 , and a second gate portion 315 .
  • the first N-type doping region 311 and the second N-type doping region 312 are located at both sides of the second gate portion 315 , the second source portion 313 is located above the first N-type doping region 311 , and the second drain portion 314 is located above the second N-type doping region 312 .
  • the second source portion 313 and the first N-type doping region 311 are in contact with each other through the seventh contact plug 321 , the eighth contact plug 322 and the ninth contact plug 323 , and the second drain portion 314 and the second N-type doping region 312 are in contact with each other through the tenth contact plug 324 , the eleventh contact plug 325 and the twelfth contact plug 326 .
  • the second source portion 313 serves as the source of the first N-type transistor N1, and the second drain portion 314 serves as the drain of the first N-type transistor N1.
  • a fourth power wiring portion 502 is further provided above the second source portion 313 and the second drain portion 314.
  • the second source portion 313 is connected to the fourth power wiring portion 502 through the sixth conductive via 331, the seventh conductive via 332, and the eighth conductive via 333, so that the source of the first N-type transistor N1 is connected to the second power supply.
  • the first wiring portion 401 , the second wiring portion 402 , the first source portion 213 , the first drain portion 214 , the second source portion 313 , and the second drain portion 314 are formed of the same metal layer.
  • One end of the first wiring portion 401 contacts one end of the first drain portion 214 , and the other end of the first wiring portion 401 contacts one end of the second drain portion 314 , thereby connecting the drain of the first P-type transistor P1 and the drain of the first N-type transistor N1 .
  • the second wiring portion 402 is connected to the first gate portion 215 through the thirteenth contact plug 403, and the second wiring portion 402 is also connected to the second gate portion 315 through the fourteenth contact plug 404.
  • the first gate portion 215 serves as the gate of the first P-type transistor P1
  • the second gate portion 315 serves as the gate of the first N-type transistor N1.
  • the gate of the first P-type transistor P1 and the gate of the first N-type transistor N1 are connected through the second wiring portion 402.
  • the inverter frame region 600 includes three frame units, which are marked as the third frame unit 601,
  • the first P-type transistor region 200 and the first N-type transistor region 300 are located in the fourth frame unit 602 and the fifth frame unit 603
  • the first wiring portion 401 is located in the fifth frame unit 603
  • the second wiring portion 402 is located in the third frame unit 601 and the fourth frame unit 602 .
  • the inverter frame region 600 includes two frame units, which are marked as a fourth frame unit 602 and a fifth frame unit 603 respectively, the first P-type transistor region 200 and the first N-type transistor region 300 are located in the fourth frame unit 602 and the fifth frame unit 603, the first wiring portion 401 is located in the fifth frame unit 603, and the second wiring portion 402 is only located in the fourth frame unit 602.
  • the present disclosure provides a switch standard cell 100, which is stored in a standard cell library. If an integrated circuit includes a switch, when designing the layout of the integrated circuit based on the circuit schematic diagram of the integrated circuit, the switch standard cell 100 in the standard cell library can be directly called to perform automatic logic synthesis and automatic layout and routing to generate the layout of the integrated circuit.
  • FIG3 shows a switch standard unit 100 according to an embodiment of the present disclosure.
  • the switch standard unit 100 includes a frame area 101 and a switch input portion 102 , a switch output portion 103 and a connection portion 104 disposed in the frame area 101 .
  • the switch input part 102 and the switch output part 103 are arranged in the same layer, that is, the switch input part 102 and the switch output part 103 are located in the same metal layer, and the switch input part 102 and the switch output part 103 both extend in the first direction V1.
  • the switch is a two-terminal device, the switch input part 102 is one end of the switch standard unit 100, and the switch output part 103 is the other end of the switch standard unit 100.
  • connection part 104 is arranged in different layers from the switch input part 102 and the switch output part 103. That is, the connection part 104 and the switch input part 102 are located in different metal layers, and the connection part 104 and the switch output part 103 are located in different metal layers.
  • the connection part 104 includes a first connection structure 1041 and a second connection structure 1042, which are arranged at intervals along the first direction V1, and both extend in the second direction V2.
  • the first connection structure 1041 is connected to the switch input part 102
  • the second connection structure 1042 is connected to the switch output part 103.
  • the switch input unit 102 is one end of the switch standard unit 100, corresponding to one end L of the switch K.
  • the switch output unit 103 is the other end of the switch standard unit 100, corresponding to the other end R of the switch K.
  • a bridge portion 109 can be arranged between the first connection structure 1041 and the second connection structure 1042, so that the first connection structure 1041 and the second connection structure 1042 are connected through the bridge portion 109, the switch input portion 102 and the switch output portion 103 are connected, and the corresponding switch of the switch standard unit 100 is in the on state.
  • switch standard cell 100 and other standard cells By extending the switch input portion 102 and the switch output portion 103 in the first direction V1, the wiring layout between the switch standard cell 100 and other standard cells is facilitated, and the wiring between the switch standard cell 100 and other standard cells is simplified.
  • Other standard cells may be other types of standard cells, such as inverter standard cells, or may be standard cells of the same type, that is, other standard cells are also switch standard cells 100.
  • the switch standard unit 100 corresponds to the switch in the on state
  • the position of the bridge portion 109 can be adjusted as needed to simplify the layout wiring of the integrated circuit.
  • the switch input portion 102 and the switch output portion 103 are located in a first metal layer, and the connection portion 104 is located in a second metal layer relatively far from the frame area 101.
  • the switch standard unit 100 includes a switch input part 102, a switch output part 103 and a connection part 104 arranged in the frame area 101, and the connection part 104 includes a first connection structure 1041 and a second connection structure 1042 arranged at intervals in the first direction V1, the first connection structure 1041 connects the switch input part 102, and the second connection structure 1042 connects the switch output part 103, the switch input part 102 serves as one end of the switch standard unit 100, and the switch output part 103 serves as the other end of the switch standard unit 100, so as to realize the layout structure design of the switch standard unit 100 corresponding to the switch in the disconnected state, facilitate the use of automatic tools to automatically layout and route the switch standard unit 100, greatly reduce the design time when the layout is first designed, and quickly solve the design problem.
  • the switch input part 102 and the switch output part 103 are extended in the first direction V1
  • the first connection structure 1041 and the second connection structure 1042 are extended in the second direction V2, which are conducive to simplifying the wiring when the layout of the integrated circuit is automatically generated.
  • the switch standard unit 100 can be modified according to the disconnected or connected state of the switch. During the modification, only a bridge portion 109 needs to be set between the first connection structure 1041 and the second connection structure 1042. After the modification, the metal layer design rules can still be met, and there will be no short circuit problem. Moreover, the modification involves only one layer of metal, which reduces the number of revision levels.
  • the frame area 101 includes a first frame unit 1011 and a second frame unit 1012 arranged along the second direction V2.
  • the switch input unit 102 is located in the first frame unit 1011 and extends in the first direction V1 in the first frame unit 1011.
  • the switch output unit 103 is located in the second frame unit 1012 and extends in the first direction V1 in the second frame unit 1012.
  • the switch input unit 102 located in the first frame unit 1011 and the switch output unit 103 located in the second frame the switch input unit 102 and the switch output unit 103 are isolated from each other, and short circuit between the switch input unit 102 and the switch output unit 103 due to too close distance is avoided, and the switch input unit 102 and the switch output unit 103 can also be ensured to meet the metal layer design rules.
  • a portion of the first connection structure 1041 is located in the first frame unit 1011, and another portion of the first connection structure 1041 is located in the second frame unit 1012.
  • a portion of the second connection structure 1042 is located in the first frame unit 1011, and another portion of the second connection structure 1042 is located in the second frame unit 1012.
  • the switch input part 102 is connected to the first connection structure 1041 through the first conductive via 107, and the switch output part 103 is connected to the second connection structure 1042 through the second conductive via 108.
  • the switch input part 102 located at different layers is electrically connected to the first connection structure 1041, and the switch output part 103 located at different layers is electrically connected to the second connection structure 1042.
  • the shortest distance between the edge of the first conductive via 107 in the first direction V1 and the edge of the first connection structure 1041 in the first direction V1 is greater than or equal to the first preset distance.
  • the shortest distance between the edge in the direction V2 and the edge of the first connection structure 1041 in the second direction V2 is greater than or equal to the second preset distance.
  • the shortest distance G1 between the upper edge of the first conductive hole 107 in the first direction V1 and the upper edge of the first connecting structure 1041 in the first direction V1 is greater than or equal to the first preset distance
  • the shortest distance G2 between the lower edge of the first conductive hole 107 in the first direction V1 and the lower edge of the first connecting structure 1041 in the first direction V1 is greater than or equal to the first preset distance
  • the shortest distance F1 between the left edge of the first conductive via 107 in the second direction V2 and the left edge of the first connection structure 1041 in the second direction V2 is greater than or equal to the second preset distance.
  • the first preset distance and the second preset distance are set according to metal layer design rules.
  • the shortest distance between the edge of the second conductive via 108 in the first direction V1 and the edge of the second connection structure 1042 in the first direction V1 is greater than or equal to the first preset distance.
  • the shortest distance between the edge of the second conductive via 108 in the second direction V2 and the edge of the second connection structure 1042 in the second direction V2 is greater than or equal to the second preset distance.
  • the shortest distance G3 between the upper edge of the second conductive via 108 in the first direction V1 and the upper edge of the second connection structure 1042 in the first direction V1 is greater than or equal to the first preset distance.
  • the shortest distance G4 between the lower edge of the second conductive via 108 in the first direction V1 and the lower edge of the second connection structure 1042 in the first direction V1 is greater than or equal to the first preset distance.
  • the shortest distance F2 between the right edge of the second conductive via 108 in the second direction V2 and the right edge of the second connection structure 1042 in the second direction V2 is greater than or equal to the second preset distance.
  • a minimum distance between the first connection structure 1041 and the second connection structure 1042 in the first direction V1 is greater than or equal to a third preset distance.
  • the shortest distance H between the lower edge of the first connection structure 1041 in the first direction V1 and the upper edge of the second connection structure 1042 in the first direction V1 is greater than or equal to the third preset distance.
  • the switch standard unit 100 includes a first power wiring portion 105 and a second power wiring portion 106.
  • the first power wiring portion 105 and the second power wiring portion 106 are arranged alternately in a first direction V1, and extend along a second direction V2.
  • the switch input portion 102 , the switch output portion 103 and the connection portion 104 are all located between the first power wiring portion 105 and the second power wiring portion 106 .
  • first power wiring section 105 and the second power wiring section 106 By providing the first power wiring section 105 and the second power wiring section 106 in the switch standard cell 100, it is convenient to wire between the switch standard cell 100 and the power supply, and the wiring when automatically generating the layout of the integrated circuit is simplified.
  • the first power wiring section 105 and the second power wiring section 106 are provided outside the switch input section 102, the switch output section 103 and the connection section 104, without affecting the layout of the core part of the switch standard cell 100.
  • the first power wiring portion 105, the second power wiring portion 106 and the connecting portion 104 are arranged on the same layer. Since the first power wiring portion 105, the second power wiring portion 106 and the connecting portion 104 are far apart, short circuit will not occur when they are arranged on the same layer, thereby ensuring the reliability of the switch standard unit 100.
  • an embodiment of the present disclosure provides a switch, the switch comprising a substrate 110 and a The switch input part 102, the switch output part 103 and the connection part 104 are provided on the substrate.
  • the switch input portion 102 and the switch output portion 103 are arranged on the same layer, that is, the switch input portion 102 and the switch output end are located on the same metal layer, and the switch input portion 102 and the switch output portion 103 extend in the first direction V1.
  • the switch is a two-terminal device, the switch input portion 102 is one end of the switch, and the switch output portion 103 is the other end of the switch.
  • connection part 104 is arranged in different layers from the switch input part 102 and the switch output part 103, that is, the connection part 104 and the switch input part 102 are located in different metal layers.
  • the connection part 104 includes a first connection structure 1041 and a second connection structure 1042.
  • the first connection structure 1041 and the second connection structure 1042 are arranged at intervals along the first direction V1, and the first connection structure 1041 and the second connection structure 1042 both extend in the second direction V2.
  • the first connection structure 1041 is connected to the switch input part 102, and the second connection structure 1042 is connected to the switch output part 103.
  • the switch input part 102 serves as one end of the switch, and the switch output part 103 serves as the other end of the switch.
  • the first connection structure 1041 and the second connection structure 1042 are arranged at intervals along the first direction V1, so that the first connection structure 1041 is connected to the switch input part 102, and the second connection structure 1042 is connected to the switch output part 103, so that the switch input part 102 and the switch output part 103 in the switch are in a disconnected state.
  • the switch includes a substrate 110 and a switch input part 102, a switch output part 103 and a connecting part 104 arranged on the substrate 110.
  • the connecting part 104 includes a first connecting structure 1041 and a second connecting structure 1042 arranged at intervals in a first direction V1.
  • the first connecting structure 1041 is connected to the switch input part 102
  • the second connecting structure 1042 is connected to the switch output part 103.
  • the switch input part 102 serves as one end of the switch standard unit 100
  • the switch output part 103 serves as the other end of the switch standard unit 100.
  • the switch input portion 102 and the switch output portion 103 are located in a first metal layer, and the connection portion 104 is located in a second metal layer relatively far from the substrate 110 relative to the first metal layer.
  • the switch standard unit 100 is designed based on the structure of the switch, and when the switch standard unit 100 is modified according to the disconnection or connection state of the switch, the modified metal layer is located in a metal layer far from the substrate 110, and the modification layout level can be reduced.
  • the switch includes a first power wiring portion 105 and a second power wiring portion 106.
  • the first power wiring portion 105 and the second power wiring portion 106 are arranged in a first direction V1 and extend in a second direction V2.
  • the switch input portion 102 , the switch output portion 103 and the connection portion 104 are all located between the first power wiring portion 105 and the second power wiring portion 106 .
  • the first power wiring section 105 and the second power wiring section 106 are set outside the switch input section 102, the switch output section 103 and the connection section 104, and the layout of the core part of the switch standard unit 100 is not affected.
  • the first power wiring portion 105, the second power wiring portion 106 and the connecting portion 104 are arranged on the same layer.
  • the switch standard unit 100 is designed based on the switch, since the first power wiring portion 105, the second power wiring portion 106 and the connecting portion 104 are far apart, they are arranged on the same layer without short circuit, thereby ensuring the reliability of the switch.
  • an embodiment of the present disclosure provides a layout design method, which is applied to electronic devices.
  • the layout design method includes the following steps:
  • the circuit schematic diagram includes at least one switch and at least one gate-level circuit unit, and the circuit schematic diagram is used to characterize the connection relationship between the at least one switch and the at least one gate-level circuit unit.
  • connection relationship includes one or more combinations of a connection relationship between a switch and a gate-level circuit unit, a connection relationship between multiple switches, and a connection relationship between multiple gate-level circuit units.
  • the circuit schematic when the circuit schematic includes a switch and a gate-level circuit unit, a connection relationship between the switch and the gate-level circuit unit is obtained.
  • the connection relationship between the switch and one or more gate-level circuit units is obtained.
  • the connection relationship between multiple gate-level circuit units can also be obtained.
  • the connection relationship between each switch and one or more gate-level circuit units, or the connection relationship between each switch and one or more other switches is obtained, and the connection relationship between the gate-level circuit unit and one or more other gate-level circuits can also be obtained.
  • information is directly extracted from the circuit schematic to obtain the connection relationship and the state of the switch, wherein the state of the switch includes an off state or an on state.
  • a gate-level netlist is obtained according to a circuit schematic, and a connection relationship and a state of a switch are determined according to the gate-level netlist.
  • the switch corresponding to the switch standard unit 100 is in an off state by default.
  • the switch standard unit 100 and the standard unit corresponding to the gate-level circuit unit are directly called for splicing.
  • Splicing means arranging and aligning the switch standard unit 100 and the standard unit corresponding to the gate-level circuit unit adjacent to each other, and then wiring and connecting the two standard units to achieve mutual connection between the two standard units.
  • the standard cell corresponding to the gate-level circuit cell includes a third power wiring portion 501 and a fourth power wiring portion 502.
  • the interval between the third power wiring portion 501 and the fourth power wiring portion 502 is the same as the interval between the first power wiring portion 105 and the second power wiring portion 106 in the switch standard cell 100.
  • the first power wiring portion 105 is aligned with the third power wiring portion 501 to connect the two
  • the second power wiring portion 106 is aligned with the fourth power wiring portion 502 to connect the two.
  • the length of the third power wiring portion 501 in the standard cell 700 corresponding to the inverter in the first direction is the same as the length of the first power wiring portion 105 in the switch standard cell 100 in the first direction
  • the length of the fourth power wiring portion 502 in the standard cell 700 corresponding to the inverter in the first direction is the same as the length of the second power wiring portion 106 in the switch standard cell 100 in the first direction
  • the interval between the third power wiring portion 501 and the fourth power wiring portion 502 in the standard cell 700 corresponding to the inverter is the same as the interval between the first power wiring portion 105 and the second power wiring portion 106 in the switch standard cell 100.
  • the standard cell 700 corresponding to the inverter and the switch standard cell 100 are connected.
  • the switch standard units 100 are aligned and spliced, the first power wiring portion 105 and the third power wiring portion 501 are aligned and connected, and the second power wiring portion 106 and the fourth power wiring portion 502 are aligned and connected.
  • S104 when the switch is in the on state, call the switch standard unit 100 and the standard unit corresponding to the gate-level circuit unit for splicing, and arrange a bridge portion 109 between the first connection structure 1041 and the second connection structure 1042 so that the first connection structure 1041 and the second connection structure 1042 are connected through the bridge portion 109 .
  • the switch when the switch is in the on state, after calling the switch standard unit 100 and the standard unit corresponding to the gate-level circuit unit for splicing, it is also necessary to arrange a bridge portion 109 between the first connection structure 1041 and the second connection structure 1042 of the switch standard unit 100, so that the first connection structure 1041 and the second connection structure 1042 are connected through the bridge portion 109, and the switch corresponding to the modified switch standard unit 100 changes from the default off state to the on state.
  • the bridge portion 109 is disposed at the same layer as the first connection structure 1041 and the second connection structure 1042 , so that when the switch standard unit 100 is modified according to the switch state, the modification level of the layout is reduced.
  • the circuit original diagram is obtained, and the connection relationship and the state of the switch are obtained according to the circuit schematic diagram.
  • the switch standard unit 100 is directly called to splice with the standard unit corresponding to the gate-level circuit unit.
  • the switch standard unit 100 is called to splice with the standard unit corresponding to the gate-level circuit unit, and a bridge portion 109 is arranged between the first connection structure 1041 and the second connection structure 1042 so that the first connection structure 1041 and the second connection structure 1042 are connected through the bridge portion 109, so as to realize automatic generation of the layout of the integrated circuit, greatly reduce the design time when the layout is first designed, and quickly solve the design problem.
  • the switch standard unit 100 can be modified according to the disconnected or connected state of the switch.
  • the bridge portion 109 needs to be set between the first connection structure 1041 and the second connection structure 1042. After modification, it can still meet the metal layer design rules, and there will be no short circuit problem.
  • modifying only one layer of metal is involved, reducing the revision level.
  • a circuit schematic when a circuit schematic includes multiple switches and any two switches are connected, the two switches are connected through wiring arranged on the polysilicon layer. Accordingly, the switch standard cells 100 corresponding to the two switches are also connected through wiring on the polysilicon layer. By setting in this way, the connection is convenient and the wiring on the metal layer can be saved.
  • the gate-level circuit units are connected by wiring arranged on a metal layer.
  • the metal layer may be a first metal layer.
  • the minimum spacing between the connection portions 104 of the two switch standard units 100 is greater than or equal to a fourth preset distance, and the fourth preset distance is set according to the metal layer design rule.
  • the minimum spacing between the conductive parts located in the same layer of two adjacent standard cells is greater than or equal to the fourth preset distance.
  • the standard cell 700 corresponding to the inverter is arranged adjacent to the switch standard cell 100, the minimum spacing between the first wiring part 401 in the inverter and the connection part of the switch standard cell 100 is greater than or equal to the fourth preset distance, and the minimum spacing J between the second wiring part 402 in the inverter and the connection part of the switch standard cell 100 is greater than or equal to the fourth preset distance.
  • the circuit schematic diagram includes four switches and two inverters.
  • the four switches are marked as a first switch K1, a second switch K2, a third switch K3 and a fourth switch K4, and the two inverters are marked as a first inverter Inv1 and a second inverter Inv2.
  • connection relationship between the two switches is obtained: the first end of the first switch K1 is connected to the first end of the third switch K3, the second end of the first switch K1 is connected to the first end of the second switch K2, and the second end of the third switch K3 is connected to the second end of the fourth switch K4.
  • a connection relationship between the two inverters is obtained: the output end of the first inverter Inv1 is connected to the input end of the second inverter Inv2.
  • connection relationship between the inverter and the switch is obtained: the second end of the first switch K1 is connected to the input end of the first inverter Inv1, the output end of the second inverter Inv2 is connected to the first end of the fourth switch K4, and the second end of the second switch K2 is connected to the ground end.
  • the first switch K1 and the fourth switch K4 are in an off state, and the second switch K2 and the third switch K3 are in an on state.
  • the switch standard cell 131 corresponding to the first switch K1, the switch standard cell 132 corresponding to the second switch K2, the switch standard cell 133 corresponding to the third switch K3, the switch standard cell 134 corresponding to the fourth switch K4, the standard cell 711 corresponding to the first inverter Inv1, and the standard cell 712 corresponding to the second inverter Inv2 are arranged adjacent to each other and aligned in sequence, and then automatic wiring connections are performed in the above standard cells according to the connection relationship.
  • a bridge 109 is arranged between the first connection structure 1041 and the second connection structure 1042 in the switch standard unit 132 corresponding to the second switch K2 , and a bridge 109 is arranged between the first connection structure 1041 and the second connection structure 1042 in the switch standard unit 133 corresponding to the third switch K3 .

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Evolutionary Computation (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

A switch standard unit, a switch, and a layout design method. The switch standard unit comprises a switch input part, a switch output part and a connecting part, all of which are arranged in a framework area, wherein the switch input part and the switch output part are arranged on the same layer and extend in a first direction; the connecting part is arranged on a different layer from the switch input part and the switch output part, and comprises a first connecting structure and a second connecting structure, which are spaced apart from each other in the first direction and both extend in a second direction; and the first connecting structure is connected to the switch input part, and the second connecting structure is connected to the switch output part.

Description

开关标准单元、开关以及版图设计方法Switch standard cell, switch and layout design method
本申请要求于2022年11月04日提交中国专利局、申请号为202211379157.0、申请名称为“开关标准单元、开关以及版图设计方法”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application filed with the China Patent Office on November 4, 2022, with application number 202211379157.0 and application name “Switch standard unit, switch and layout design method”, all contents of which are incorporated by reference in this application.
技术领域Technical Field
本公开涉及但不限定于一种开关标准单元、开关以及版图设计方法。The present disclosure relates to but is not limited to a switch standard unit, a switch, and a layout design method.
背景技术Background technique
集成电路的设计通常可以分为全定制设计和半定制设计。全定制设计能够更好提高器件性能,但是耗时较多,难以完全实现自动化设计。半定制设计可以是基于门阵列或者基于标准单元库的设计,实现全自动化设计。因此,基于门阵列或者基于标准单元库的设计,可以提高版图设计效率。Integrated circuit design can usually be divided into full custom design and semi-custom design. Full custom design can better improve device performance, but it is time-consuming and difficult to fully realize automated design. Semi-custom design can be based on gate arrays or standard cell libraries to achieve fully automated design. Therefore, designs based on gate arrays or standard cell libraries can improve layout design efficiency.
发明内容Summary of the invention
本公开一实施例提供一种开关标准单元,包括:设置于框架区域内的开关输入部、开关输出部以及连接部;An embodiment of the present disclosure provides a switch standard unit, comprising: a switch input portion, a switch output portion, and a connection portion disposed in a frame area;
开关输入部和开关输出部同层布置,且在第一方向上延伸;The switch input portion and the switch output portion are arranged in the same layer and extend in a first direction;
连接部与开关输入部和开关输出部异层布置,包括沿第一方向间隔布置且均在第二方向上延伸的第一连接结构和第二连接结构;第一连接结构与开关输入部连接,第二连接结构与开关输出部连接。The connection part is arranged in different layers with the switch input part and the switch output part, and includes a first connection structure and a second connection structure arranged at intervals along the first direction and both extending in the second direction; the first connection structure is connected to the switch input part, and the second connection structure is connected to the switch output part.
在一些实施例中,框架区域包括沿第二方向布置的第一框架单元和第二框架单元;In some embodiments, the frame region includes a first frame unit and a second frame unit arranged along the second direction;
开关输入部位于第一框架单元内,开关输出部位于第二框架单元内;第一连接结构一部分位于第一框架单元内,另一部分位于第二框架单元内;第二连接结构一部分位于第一框架单元内,另一部分位于第二框架单元内。The switch input part is located in the first frame unit, and the switch output part is located in the second frame unit; a part of the first connecting structure is located in the first frame unit, and another part is located in the second frame unit; a part of the second connecting structure is located in the first frame unit, and another part is located in the second frame unit.
在一些实施例中,开关输入部通过第一导电孔与第一连接结构连接,开关输出部通过第二导电孔与第二连接结构连接。In some embodiments, the switch input portion is connected to the first connection structure through a first conductive via, and the switch output portion is connected to the second connection structure through a second conductive via.
在一些实施例中,第一导电孔在第一方向上的边缘与第一连接结构在第一方向上的边缘之间的最短距离大于等于第一预设距离;第一导电孔在第二方向上的边缘与第一连接结构在第二方向上的边缘之间的最短距离大于等于第二预设距离;In some embodiments, the shortest distance between the edge of the first conductive via in the first direction and the edge of the first connecting structure in the first direction is greater than or equal to the first preset distance; the shortest distance between the edge of the first conductive via in the second direction and the edge of the first connecting structure in the second direction is greater than or equal to the second preset distance;
第二导电孔在第一方向上的边缘与第二连接结构在第一方向上的边缘之间的最短距离大于等于第一预设距离;第二导电孔在第二方向上的边缘与第二连接结构在第二方向上的边缘之间的最短距离大于等于第二预设距离。The shortest distance between the edge of the second conductive hole in the first direction and the edge of the second connecting structure in the first direction is greater than or equal to the first preset distance; the shortest distance between the edge of the second conductive hole in the second direction and the edge of the second connecting structure in the second direction is greater than or equal to the second preset distance.
在一些实施例中,第一连接结构与第二连接结构在第一方向上的最小间距大于等于第三预设距离。In some embodiments, a minimum distance between the first connection structure and the second connection structure in the first direction is greater than or equal to a third preset distance.
在一些实施例中,标准单元包括在第一方向上间隔排布且沿第二方向延伸的第一电源布线部和第二电源布线部;In some embodiments, the standard cell includes a first power wiring portion and a second power wiring portion that are arranged at intervals in the first direction and extend along the second direction;
开关输入部、开关输出部以及连接部位于第一电源布线部和第二电源布线部之间。 The switch input portion, the switch output portion, and the connection portion are located between the first power wiring portion and the second power wiring portion.
在一些实施例中,第一电源布线部、第二电源布线部和连接部同层布置。In some embodiments, the first power wiring portion, the second power wiring portion, and the connection portion are arranged in the same layer.
本公开一实施例提供一种开关,包括设置于衬底上的开关输入部、开关输出部以及连接部;An embodiment of the present disclosure provides a switch, comprising a switch input portion, a switch output portion, and a connecting portion disposed on a substrate;
开关输入部和开关输出部同层布置,且在第一方向上延伸;The switch input portion and the switch output portion are arranged in the same layer and extend in a first direction;
连接部与开关输入部和开关输出部异层布置,包括沿第一方向间隔布置且均在第二方向上延伸的第一连接结构和第二连接结构;第一连接结构与开关输入部连接,第二连接结构与开关输出部连接。The connection part is arranged in different layers with the switch input part and the switch output part, and includes a first connection structure and a second connection structure arranged at intervals along the first direction and both extending in the second direction; the first connection structure is connected to the switch input part, and the second connection structure is connected to the switch output part.
在一些实施例中,开关输入部和开关输出部位于第一金属层,连接部位于相对第一金属层远离衬底的第二金属层。In some embodiments, the switch input portion and the switch output portion are located in a first metal layer, and the connecting portion is located in a second metal layer that is farther away from the substrate than the first metal layer.
本公开一实施例提供一种版图设计方法,包括:An embodiment of the present disclosure provides a layout design method, including:
获得电路原理图,电路原理图包括至少一个开关和至少一个门级电路单元;Obtaining a circuit schematic diagram, the circuit schematic diagram comprising at least one switch and at least one gate-level circuit unit;
根据电路原理图获得连接关系以及开关的所处状态;其中,连接关系包括开关和门级电路单元的连接关系、多个开关之间连接关系以及多个门级电路单元的连接关系中至少一种;Obtaining a connection relationship and a state of a switch according to a circuit schematic diagram; wherein the connection relationship includes at least one of a connection relationship between a switch and a gate-level circuit unit, a connection relationship between a plurality of switches, and a connection relationship between a plurality of gate-level circuit units;
当开关处于断开状态,根据连接关系调用上述实施例所涉及的开关标准单元与门级电路单元对应的标准单元进行拼接;When the switch is in an off state, the switch standard unit involved in the above embodiment and the standard unit corresponding to the gate-level circuit unit are called for splicing according to the connection relationship;
当开关处于接通状态,根据连接关系调用上述实施例所涉及的开关标准单元与门级电路单元对应的标准单元进行拼接,并在第一连接结构和第二连接结构之间布置桥接部以使第一连接结构和第二连接结构通过桥接部连接。When the switch is in the on state, the switch standard unit involved in the above embodiment is called according to the connection relationship to splice the standard unit corresponding to the gate-level circuit unit, and a bridge portion is arranged between the first connection structure and the second connection structure so that the first connection structure and the second connection structure are connected through the bridge portion.
在一些实施例中,桥接部与第一连接结构和第二连接结构同层设置。In some embodiments, the bridge portion is disposed in the same layer as the first connection structure and the second connection structure.
在一些实施例中,根据电路原理图获得连接关系以及开关的所处状态,具体包括:In some embodiments, obtaining the connection relationship and the state of the switch according to the circuit schematic diagram specifically includes:
根据电路原理图获得门级网表,并根据门级网表确定连接关系以及开关的所处状态。A gate-level netlist is obtained according to the circuit schematic, and a connection relationship and a state of a switch are determined according to the gate-level netlist.
在一些实施例中,当有两个开关标准单元相邻拼接时,两个开关标准单元的连接部之间的最小间距大于等于第四预设距离。In some embodiments, when two switch standard units are adjacently spliced, a minimum distance between connection portions of the two switch standard units is greater than or equal to a fourth preset distance.
在一些实施例中,当电路原理图中包括多个开关,且任意两个开关存在连接关系时,两个开关通过设置于多晶硅层的布线连接。In some embodiments, when a circuit schematic includes a plurality of switches and any two switches are connected, the two switches are connected via wiring disposed in the polysilicon layer.
在一些实施例中,门级电路单元所对应标准单元包括第三电源布线部和第四电源布线部,且第三电源布线部和第四电源布线部之间间隔与开关标准单元中第一电源布线部和第二电源布线部之间间隔相同;当开关标准单元与门级电路单元所对应标准单元进行拼接时,第一电源布线部与第三电源布线部对齐拼接以使二者接通,第二电源布线部与第四电源布线部对齐拼接以使二者接通。In some embodiments, the standard unit corresponding to the gate-level circuit unit includes a third power wiring portion and a fourth power wiring portion, and the interval between the third power wiring portion and the fourth power wiring portion is the same as the interval between the first power wiring portion and the second power wiring portion in the switch standard unit; when the switch standard unit and the standard unit corresponding to the gate-level circuit unit are spliced, the first power wiring portion and the third power wiring portion are aligned and spliced so that the two are connected, and the second power wiring portion and the fourth power wiring portion are aligned and spliced so that the two are connected.
本公开提供的开关标准单元、开关以及版图设计方法,开关标准单元包括框架区域和设置于框架区域内的开关输入部、开关输出部以及连接部,连接部包括在第一方向上间隔布置的第一连接结构和第二连接结构,第一连接结构连接开关输入部,第二连接结构连接开关输出部,开关输入部作为开关标准单元的一端,开关输出部作为开关标准单元的另一端,实现处于断开状态的开关对应的开关标准单元的版图结构设计,便于使用自动工具对开关标准单元进行自动布局布线,在版图初次设计时大大减少设计时间,快速解决设计问题。并且,使开关输入部和开关输出部在第一方向上延伸,使第一连接结 构和第二连接结构在第二方向上延伸,均有利于简化在自动生成集成电路的版图时的布线。此外,在版图设计时可以根据开关的断开或者接通状态修改开关标准单元,修改时仅需在第一连接结构和第二连接结构之间设置桥接部,修改后仍能符合金属层设计规则,也不会出现短路问题,且修改时仅涉及一层金属,减少改版层次。The switch standard unit, switch and layout design method provided by the present disclosure include a frame area and a switch input part, a switch output part and a connection part arranged in the frame area. The connection part includes a first connection structure and a second connection structure arranged at intervals in a first direction. The first connection structure connects the switch input part, and the second connection structure connects the switch output part. The switch input part serves as one end of the switch standard unit, and the switch output part serves as the other end of the switch standard unit. The layout structure design of the switch standard unit corresponding to the switch in the disconnected state is realized, which facilitates the use of automatic tools to automatically layout and route the switch standard unit, greatly reduces the design time during the initial layout design, and quickly solves the design problem. In addition, the switch input part and the switch output part are extended in the first direction, so that the first connection structure is connected to the first connection structure. The first connection structure and the second connection structure extend in the second direction, which are both helpful to simplify the wiring when automatically generating the layout of the integrated circuit. In addition, the switch standard unit can be modified according to the disconnection or connection state of the switch during layout design. When modifying, only a bridge portion needs to be set between the first connection structure and the second connection structure. After modification, the metal layer design rules can still be met, and there will be no short circuit problem. Moreover, the modification involves only one layer of metal, which reduces the revision level.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本公开的实施例,并与说明书一起用于解释本公开的原理。The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and, together with the description, serve to explain the principles of the present disclosure.
图1为一种反相器的电路原理图;FIG1 is a circuit diagram of an inverter;
图2为一种反相器对应的标准单元的版图示意图;FIG2 is a schematic diagram of a layout of a standard unit corresponding to an inverter;
图3为本公开提供的一种开关标准单元的版图示意图;FIG3 is a schematic diagram of a layout of a switch standard unit provided by the present disclosure;
图4为本公开提供的另一种开关标准单元的版图示意图;FIG4 is a schematic diagram of a layout of another switch standard unit provided by the present disclosure;
图5为图3提供的开关标准单元的电路原理图;FIG5 is a circuit diagram of the switch standard unit provided in FIG3 ;
图6为图4提供的开关标准单元的电路原理图;FIG6 is a circuit diagram of the switch standard unit provided in FIG4 ;
图7为本公开提供的反相器对应的标准单元与开关标准单元之间拼接的示意图;FIG7 is a schematic diagram of the connection between the standard unit corresponding to the inverter and the switch standard unit provided by the present disclosure;
图8为本公开提供的一种开关的结构示意图;FIG8 is a schematic diagram of the structure of a switch provided by the present disclosure;
图9为本公开提供的一种版图设计方法的流程示意图;FIG9 is a schematic diagram of a flow chart of a layout design method provided by the present disclosure;
图10为本公开提供的一种集成电路的电路原理图;FIG10 is a circuit schematic diagram of an integrated circuit provided by the present disclosure;
图11为本公开提供的一种集成电路的版图示意图。FIG11 is a schematic diagram of a layout of an integrated circuit provided by the present disclosure.
附图标记:Reference numerals:
100、开关标准单元;101、框架区域;1011、第一框架单元;1012、第二框架单元;102、开关输入部;103、开关输出部;104、连接部;1041、第一连接结构;1042、第二连接结构;105、第一电源布线部;106、第二电源布线部;107、第一导电孔;108、第二导电孔;109、桥接部;110、衬底;131、第一开关对应的开关标准单元;131、第二开关对应的开关标准单元;133、第三开关对应的开关标准单元;134、第四开关对应的开关标准单元;100, switch standard unit; 101, frame area; 1011, first frame unit; 1012, second frame unit; 102, switch input unit; 103, switch output unit; 104, connection unit; 1041, first connection structure; 1042, second connection structure; 105, first power wiring unit; 106, second power wiring unit; 107, first conductive hole; 108, second conductive hole; 109, bridge unit; 110, substrate; 131, switch standard unit corresponding to the first switch; 131, switch standard unit corresponding to the second switch; 133, switch standard unit corresponding to the third switch; 134, switch standard unit corresponding to the fourth switch;
200、第一P型晶体管区域;211、第一P型掺杂区;212、第二P型掺杂区;213、第一源极部;214、第一漏极部;215、第一栅极部;221、第一接触栓塞;222、第二接触栓塞;223、第三接触栓塞;224、第四接触栓塞;225、第五接触栓塞;226、第六接触栓塞;231、第三导电孔;232、第四导电孔;233、第五导电孔;200, a first P-type transistor region; 211, a first P-type doping region; 212, a second P-type doping region; 213, a first source portion; 214, a first drain portion; 215, a first gate portion; 221, a first contact plug; 222, a second contact plug; 223, a third contact plug; 224, a fourth contact plug; 225, a fifth contact plug; 226, a sixth contact plug; 231, a third conductive hole; 232, a fourth conductive hole; 233, a fifth conductive hole;
300、第一N型晶体管区域;311、第一N型掺杂区;312、第二N型掺杂区;313、第二源极部;314、第二漏极部;315、第二栅极部;321、第七接触栓塞;322、第八接触栓塞;323、第九接触栓塞;324、第十接触栓塞;325、第十一接触栓塞;326、第十二接触栓塞;331、第六导电孔;332、第七导电孔;333、第八导电孔;401、第一接线部;402、第二接线部;403、第十三接触栓塞;404、第十四接触栓塞;300, a first N-type transistor region; 311, a first N-type doping region; 312, a second N-type doping region; 313, a second source portion; 314, a second drain portion; 315, a second gate portion; 321, a seventh contact plug; 322, an eighth contact plug; 323, a ninth contact plug; 324, a tenth contact plug; 325, an eleventh contact plug; 326, a twelfth contact plug; 331, a sixth conductive hole; 332, a seventh conductive hole; 333, an eighth conductive hole; 401, a first wiring portion; 402, a second wiring portion; 403, a thirteenth contact plug; 404, a fourteenth contact plug;
501、第三电源布线部;502、第四电源布线部;600、反相器框架区域;601、第三框架单元;602、第四框架单元;603、第五框架单元;700、反相器对应的标准单元;711、第一反相器对应的标准单元;722、第二反相器对应的标准单元;P1、第一P型晶体管;N1、第一N型晶体管;V1、第一方向;V2、第二方向;K1、第一开关;K2、第二开关;K3、第三 开关;K4、第四开关;Inv1、第一反相器;Inv2、第二反相器。501, third power wiring section; 502, fourth power wiring section; 600, inverter frame area; 601, third frame unit; 602, fourth frame unit; 603, fifth frame unit; 700, standard unit corresponding to the inverter; 711, standard unit corresponding to the first inverter; 722, standard unit corresponding to the second inverter; P1, first P-type transistor; N1, first N-type transistor; V1, first direction; V2, second direction; K1, first switch; K2, second switch; K3, third switch; K4, fourth switch; Inv1, first inverter; Inv2, second inverter.
通过上述附图,已示出本公开明确的实施例,后文中将有更详细的描述。这些附图和文字描述并不是为了通过任何方式限制本公开构思的范围,而是通过参考特定实施例为本领域技术人员说明本公开的概念。The above drawings have shown clear embodiments of the present disclosure, which will be described in more detail below. These drawings and text descriptions are not intended to limit the scope of the present disclosure in any way, but to illustrate the concepts of the present disclosure to those skilled in the art by referring to specific embodiments.
具体实施方式Detailed ways
这里将详细地对示例性实施例进行说明,其示例表示在附图中。下面的描述涉及附图时,除非另有表示,不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施方式并不代表与本公开相一致的所有实施方式。相反,它们仅是与如所附权利要求书中所详述的、本公开的一些方面相一致的装置和方法的例子。Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Instead, they are merely examples of devices and methods consistent with some aspects of the present disclosure as detailed in the appended claims.
集成电路的设计通常可以分为全定制设计和半定制设计。全定制设计是一种基于晶体管级的设计方法,电路的所有元器件、互连和版图均都采用直接设计。例如:针对每个晶体管,定制其特有的长宽比等参数;针对每条关键路径,通过调节布线的多晶硅掺杂浓度或者金属材质、宽度等参数进而调节其具体的寄生散布参数。The design of integrated circuits can usually be divided into full-custom design and semi-custom design. Full-custom design is a design method based on the transistor level, in which all components, interconnections and layouts of the circuit are directly designed. For example: for each transistor, its unique aspect ratio and other parameters are customized; for each critical path, the specific parasitic dispersion parameters are adjusted by adjusting the polysilicon doping concentration or metal material, width and other parameters of the wiring.
全定制设计能够更好提高元器件性能,但是耗时较多,难以完全实现自动化设计。半定制设计可以是基于门阵列或者基于标准单元库的设计。标准单元库是超大规模集成电路的自动化设计的基础。Full custom design can improve the performance of components, but it is time-consuming and difficult to fully realize automated design. Semi-custom design can be based on gate arrays or standard cell libraries. Standard cell libraries are the basis of automated design of VLSI.
标准单元库是指把电路设计中一些基本逻辑单元,例如门电路、多路开关、触发器等,按照最佳设计原则预先设计后,置于标准单元库内。在进行集成设计时,仅需要根据电路要求从标准单元库中调用所需的标准单元,进行自动逻辑综合和自动布局布线,提高设计效率。Standard cell library refers to some basic logic units in circuit design, such as gate circuits, multi-way switches, triggers, etc., which are pre-designed according to the best design principles and placed in the standard cell library. When performing integrated design, it is only necessary to call the required standard cells from the standard cell library according to the circuit requirements, perform automatic logic synthesis and automatic layout and routing, and improve design efficiency.
标准单元库的设计通常包括如下过程:The design of a standard cell library usually includes the following processes:
首先,标准单元库的方案设计。是指根据标准单元库的用途和面向的工艺确定标准单元库中基本逻辑单元的各项技术指标。例如:基本逻辑单元的基本设计尺寸、基本逻辑单元的最高工作频率、基本逻辑单元的功耗等。First, the design of the standard cell library. This means determining the technical indicators of the basic logic cells in the standard cell library according to the purpose of the standard cell library and the process it is targeting. For example: the basic design size of the basic logic cell, the maximum operating frequency of the basic logic cell, the power consumption of the basic logic cell, etc.
其次,标准单元库的电路设计。是指根据基本逻辑单元的各项技术指标的要求,设计不同驱动能力的器件尺寸。Secondly, the circuit design of the standard cell library refers to designing device sizes with different driving capabilities according to the requirements of various technical indicators of the basic logic unit.
再次,标准单元库的版图设计。是指根据相关工艺参数及标准单元库的中基本逻辑单元的各项技术指标确定版图设计基本参数,例如:版图设计的单元高度、线道宽度、线道数量和区域划分等等。Thirdly, the layout design of the standard cell library refers to determining the basic parameters of the layout design based on the relevant process parameters and the technical indicators of the basic logic cells in the standard cell library, such as: the cell height, line width, number of lines, and area division of the layout design.
最后,标准单元库的版图设计优化,比如:面积和性能优化等。Finally, the layout design of the standard cell library is optimized, such as area and performance optimization.
通常,在标准单元库的单元版图结构中,每个单元的高度需要满足金属层设计规则。Typically, in the cell layout structure of a standard cell library, the height of each cell needs to meet the metal layer design rules.
下面基于上述设计规则,描述一种反相器的标准单元的版图,反相器的标准单元存储于标准单元库中。若集成电路中包含反相器,在基于集成电路的电路原理图设计集成电路的版图时,可直接调用标准单元库中反相器的标准单元进行自动逻辑综合和自动布局布线,生成集成电路的版图。Based on the above design rules, the following describes a layout of a standard cell of an inverter, which is stored in a standard cell library. If an integrated circuit includes an inverter, when designing the layout of the integrated circuit based on the circuit schematic of the integrated circuit, the standard cell of the inverter in the standard cell library can be directly called for automatic logic synthesis and automatic layout and routing to generate the layout of the integrated circuit.
图1为一种反相器的电路原理图,一种反相器包括第一P型晶体管P1和第一N型晶体管N1,第一P型晶体管P1的源极连接第一电源,第一N型晶体管N1的源极连接第二电源,第一P型晶体管P1的栅极连接第一N型晶体管N1的栅极后,作为反相器的输入端In,第一 P型晶体管P1的漏极连接第一N型晶体管N1的漏极后,作为反相器的输出端Out。第一电源提供电压为电源电压VCC,第二电源提供电压为接地电压VSS。FIG1 is a circuit diagram of an inverter, wherein the inverter includes a first P-type transistor P1 and a first N-type transistor N1, wherein the source of the first P-type transistor P1 is connected to a first power supply, the source of the first N-type transistor N1 is connected to a second power supply, and the gate of the first P-type transistor P1 is connected to the gate of the first N-type transistor N1 as an input terminal In of the inverter. The drain of the P-type transistor P1 is connected to the drain of the first N-type transistor N1 to serve as the output terminal Out of the inverter. The voltage provided by the first power supply is the power supply voltage VCC, and the voltage provided by the second power supply is the ground voltage VSS.
图2为反相器的标准单元的版图示意图,一种反相器的标准单元包括反相器框架区域600和位于反相器框架区域600内的第一P型晶体管区域200、第一N型晶体管区域300、第一接线部401和第二接线部402。2 is a schematic diagram of a layout of a standard unit of an inverter. A standard unit of an inverter includes an inverter frame region 600 and a first P-type transistor region 200 , a first N-type transistor region 300 , a first wiring portion 401 and a second wiring portion 402 located in the inverter frame region 600 .
第一P型晶体管区域200和第一N型晶体管区域300布置于反相器框架区域600的两侧。第一接线部401和第二接线部402布置于反相器框架区域600的中间。The first P-type transistor region 200 and the first N-type transistor region 300 are arranged on both sides of the inverter frame region 600. The first wiring portion 401 and the second wiring portion 402 are arranged in the middle of the inverter frame region 600.
第一P型晶体管区域200包括第一P型掺杂区211、第二P型掺杂区212、第一源极部213、第一漏极部214以及第一栅极部215。The first P-type transistor region 200 includes a first P-type doping region 211 , a second P-type doping region 212 , a first source portion 213 , a first drain portion 214 , and a first gate portion 215 .
第一P型掺杂区211和第二P型掺杂区212位于第一栅极部215的两侧,第一源极部213位于第一P型掺杂区211的上方,第一漏极部214位于第二P型掺杂区212的上方。The first P-type doping region 211 and the second P-type doping region 212 are located at both sides of the first gate portion 215 , the first source portion 213 is located above the first P-type doping region 211 , and the first drain portion 214 is located above the second P-type doping region 212 .
第一源极部213和第一P型掺杂区211通过第一接触栓塞221、第二接触栓塞222和第三接触栓塞223实现相互接触,第一漏极部214和第二P型掺杂区212通过第四接触栓塞224、第五接触栓塞225和第六接触栓塞226实现相互接触。The first source portion 213 and the first P-type doping region 211 are in contact with each other through the first contact plug 221 , the second contact plug 222 and the third contact plug 223 , and the first drain portion 214 and the second P-type doping region 212 are in contact with each other through the fourth contact plug 224 , the fifth contact plug 225 and the sixth contact plug 226 .
第一源极部213作为第一P型晶体管P1的源极,第一漏极部214作为第一P型晶体管P1的漏极。在第一源极部213和第一漏极部214的上方还设有第三电源布线部501,第一源极部213通过第三导电孔231、第四导电孔232以及第五导电孔233与第三电源布线部501连接,实现第一P型晶体管P1的源极连接第一电源。The first source portion 213 serves as the source of the first P-type transistor P1, and the first drain portion 214 serves as the drain of the first P-type transistor P1. A third power wiring portion 501 is further provided above the first source portion 213 and the first drain portion 214. The first source portion 213 is connected to the third power wiring portion 501 through the third conductive via 231, the fourth conductive via 232, and the fifth conductive via 233, so that the source of the first P-type transistor P1 is connected to the first power supply.
继续参考图2,第一N型晶体管区域300包括第一N型掺杂区311、第二N型掺杂区312、第二源极部313、第二漏极部314以及第二栅极部315。2 , the first N-type transistor region 300 includes a first N-type doping region 311 , a second N-type doping region 312 , a second source portion 313 , a second drain portion 314 , and a second gate portion 315 .
第一N型掺杂区311和第二N型掺杂区312位于第二栅极部315的两侧,第二源极部313位于第一N型掺杂区311的上方,第二漏极部314位于第二N型掺杂区312的上方。The first N-type doping region 311 and the second N-type doping region 312 are located at both sides of the second gate portion 315 , the second source portion 313 is located above the first N-type doping region 311 , and the second drain portion 314 is located above the second N-type doping region 312 .
第二源极部313和第一N型掺杂区311通过第七接触栓塞321、第八接触栓塞322和第九接触栓塞323相互接触,第二漏极部314和第二N型掺杂区312通过第十接触栓塞324、第十一接触栓塞325和第十二接触栓塞326相互接触。The second source portion 313 and the first N-type doping region 311 are in contact with each other through the seventh contact plug 321 , the eighth contact plug 322 and the ninth contact plug 323 , and the second drain portion 314 and the second N-type doping region 312 are in contact with each other through the tenth contact plug 324 , the eleventh contact plug 325 and the twelfth contact plug 326 .
第二源极部313作为第一N型晶体管N1的源极,第二漏极部314作为第一N型晶体管N1的漏极。在第二源极部313和第二漏极部314的上方还设有第四电源布线部502,第二源极部313通过第六导电孔331、第七导电孔332以及第八导电孔333与第四电源布线部502连接,实现第一N型晶体管N1的源极连接第二电源。The second source portion 313 serves as the source of the first N-type transistor N1, and the second drain portion 314 serves as the drain of the first N-type transistor N1. A fourth power wiring portion 502 is further provided above the second source portion 313 and the second drain portion 314. The second source portion 313 is connected to the fourth power wiring portion 502 through the sixth conductive via 331, the seventh conductive via 332, and the eighth conductive via 333, so that the source of the first N-type transistor N1 is connected to the second power supply.
第一接线部401、第二接线部402、第一源极部213、第一漏极部214、第二源极部313以及第二漏极部314为同层金属。The first wiring portion 401 , the second wiring portion 402 , the first source portion 213 , the first drain portion 214 , the second source portion 313 , and the second drain portion 314 are formed of the same metal layer.
第一接线部401一端与第一漏极部214的一端接触,第一接线部401的另一端与第二漏极部314的一端接触,实现第一P型晶体管P1的漏极和第一N型晶体管N1的漏极连接。One end of the first wiring portion 401 contacts one end of the first drain portion 214 , and the other end of the first wiring portion 401 contacts one end of the second drain portion 314 , thereby connecting the drain of the first P-type transistor P1 and the drain of the first N-type transistor N1 .
第二接线部402通过第十三接触栓塞403连接第一栅极部215,第二接线部402还通过第十四接触栓塞404连接第二栅极部315,第一栅极部215作为第一P型晶体管P1的栅极,第二栅极部315作为第一N型晶体管N1的栅极,第一P型晶体管P1的栅极和第一N型晶体管N1的栅极通过第二接线部402实现连接。The second wiring portion 402 is connected to the first gate portion 215 through the thirteenth contact plug 403, and the second wiring portion 402 is also connected to the second gate portion 315 through the fourteenth contact plug 404. The first gate portion 215 serves as the gate of the first P-type transistor P1, and the second gate portion 315 serves as the gate of the first N-type transistor N1. The gate of the first P-type transistor P1 and the gate of the first N-type transistor N1 are connected through the second wiring portion 402.
在一些实施例中,反相器框架区域600包括三个框架单元,依次标记为第三框架单元601、 第四框架单元602和第五框架单元603。第一P型晶体管区域200和第一N型晶体管区域300位于第四框架单元602和第五框架单元603内,第一接线部401位于第五框架单元603内,第二接线部402位于第三框架单元601和第四框架单元602内。In some embodiments, the inverter frame region 600 includes three frame units, which are marked as the third frame unit 601, The first P-type transistor region 200 and the first N-type transistor region 300 are located in the fourth frame unit 602 and the fifth frame unit 603 , the first wiring portion 401 is located in the fifth frame unit 603 , and the second wiring portion 402 is located in the third frame unit 601 and the fourth frame unit 602 .
在一些实施例中,反相器框架区域600包括两个框架单元,依次标记为第四框架单元602和第五框架单元603,第一P型晶体管区域200和第一N型晶体管区域300位于第四框架单元602和第五框架单元603内,第一接线部401位于第五框架单元603内,第二接线部402仅位于第四框架单元602内。In some embodiments, the inverter frame region 600 includes two frame units, which are marked as a fourth frame unit 602 and a fifth frame unit 603 respectively, the first P-type transistor region 200 and the first N-type transistor region 300 are located in the fourth frame unit 602 and the fifth frame unit 603, the first wiring portion 401 is located in the fifth frame unit 603, and the second wiring portion 402 is only located in the fourth frame unit 602.
本公开提供一种开关标准单元100,该开关标准单元100存储于标准单元库中。若集成电路中包含开关,在基于集成电路的电路原理图设计集成电路的版图时,可直接调用标准单元库中开关标准单元100进行自动逻辑综合和自动布局布线,生成集成电路的版图。The present disclosure provides a switch standard cell 100, which is stored in a standard cell library. If an integrated circuit includes a switch, when designing the layout of the integrated circuit based on the circuit schematic diagram of the integrated circuit, the switch standard cell 100 in the standard cell library can be directly called to perform automatic logic synthesis and automatic layout and routing to generate the layout of the integrated circuit.
图3为本公开一实施例提供一种开关标准单元100,开关标准单元100包括框架区域101和设置于框架区域101内的开关输入部102、开关输出部103以及连接部104。FIG3 shows a switch standard unit 100 according to an embodiment of the present disclosure. The switch standard unit 100 includes a frame area 101 and a switch input portion 102 , a switch output portion 103 and a connection portion 104 disposed in the frame area 101 .
开关输入部102和开关输出部103同层布置,也就是开关输入部102和开关输出部103位于同一金属层,并且开关输入部102和开关输出部103均在第一方向V1上延伸。开关作为两端器件,开关输入部102作为开关标准单元100的其中一端,开关输出部103作为开关标准单元100的另一端。The switch input part 102 and the switch output part 103 are arranged in the same layer, that is, the switch input part 102 and the switch output part 103 are located in the same metal layer, and the switch input part 102 and the switch output part 103 both extend in the first direction V1. The switch is a two-terminal device, the switch input part 102 is one end of the switch standard unit 100, and the switch output part 103 is the other end of the switch standard unit 100.
连接部104与开关输入部102和开关输出部103异层布置。也就是连接部104与开关输入部102位于不同金属层,且连接部104与开关输出部103位于不同金属层。The connection part 104 is arranged in different layers from the switch input part 102 and the switch output part 103. That is, the connection part 104 and the switch input part 102 are located in different metal layers, and the connection part 104 and the switch output part 103 are located in different metal layers.
其中,连接部104包括第一连接结构1041和第二连接结构1042,第一连接结构1041和第二连接结构1042沿第一方向V1间隔布置,第一连接结构1041和第二连接结构1042均在第二方向V2上延伸。第一连接结构1041与开关输入部102连接,第二连接结构1042与开关输出部103连接。The connection part 104 includes a first connection structure 1041 and a second connection structure 1042, which are arranged at intervals along the first direction V1, and both extend in the second direction V2. The first connection structure 1041 is connected to the switch input part 102, and the second connection structure 1042 is connected to the switch output part 103.
图5为开关标准单元100对应的电路原理图,开关输入部102作为开关标准单元100的其中一端,对应开关K的其中一端L,开关输出部103作为开关标准单元100的另一端,对应开关K的另一端R,通过设置第一连接结构1041和第二连接结构1042沿第一方向V1间隔布置,第一连接结构1041与开关输入部102连接,第二连接结构1042与开关输出部103连接,使得开关输入部102和开关输出部103之间断开,开关标准单元100对应开关处于断开状态。5 is a schematic diagram of a circuit corresponding to the switch standard unit 100. The switch input unit 102 is one end of the switch standard unit 100, corresponding to one end L of the switch K. The switch output unit 103 is the other end of the switch standard unit 100, corresponding to the other end R of the switch K. By setting a first connection structure 1041 and a second connection structure 1042 arranged at intervals along a first direction V1, the first connection structure 1041 is connected to the switch input unit 102, and the second connection structure 1042 is connected to the switch output unit 103, so that the switch input unit 102 and the switch output unit 103 are disconnected, and the corresponding switch of the switch standard unit 100 is in a disconnected state.
如图4和图6所示,在自动化生成集成电路的版图时,若集成电路的电路原理图中使用的开关处于接通状态,则可以在调用上述开关标准单元100时,在第一连接结构1041和第二连接结构1042之间布置桥接部109,以使第一连接结构1041和第二连接结构1042通过桥接部109连接,开关输入部102和开关输出部103之间接通,开关标准单元100对应开关处于接通状态。As shown in Figures 4 and 6, when automatically generating the layout of an integrated circuit, if the switch used in the circuit schematic of the integrated circuit is in the on state, then when calling the above-mentioned switch standard unit 100, a bridge portion 109 can be arranged between the first connection structure 1041 and the second connection structure 1042, so that the first connection structure 1041 and the second connection structure 1042 are connected through the bridge portion 109, the switch input portion 102 and the switch output portion 103 are connected, and the corresponding switch of the switch standard unit 100 is in the on state.
通过让开关输入部102和开关输出部103均在第一方向V1上延伸,便于开关标准单元100与其他标准单元之间的布线布局,使开关标准单元100与其他标准单元之间布线简化。其他标准单元可以为其他类型的标准单元,例如:反相器的标准单元,也可以为同类型的标准单元,也就是其他标准单元也为开关标准单元100。By extending the switch input portion 102 and the switch output portion 103 in the first direction V1, the wiring layout between the switch standard cell 100 and other standard cells is facilitated, and the wiring between the switch standard cell 100 and other standard cells is simplified. Other standard cells may be other types of standard cells, such as inverter standard cells, or may be standard cells of the same type, that is, other standard cells are also switch standard cells 100.
通过让第一连接结构1041和第二连接结构1042均在第二方向V2上延伸,若需使用 处于接通状态的开关对应的开关标准单元100时,仅需在第一连接结构1041和第二连接结构1042之间任意位置布置桥接部109,即可生成处于接通状态的开关对应的开关标准单元100,可以根据需求调节桥接部109的位置,简化集成电路的版图布线。By allowing the first connection structure 1041 and the second connection structure 1042 to extend in the second direction V2, if it is necessary to use When the switch standard unit 100 corresponds to the switch in the on state, it is only necessary to arrange the bridge portion 109 at any position between the first connection structure 1041 and the second connection structure 1042 to generate the switch standard unit 100 corresponding to the switch in the on state. The position of the bridge portion 109 can be adjusted as needed to simplify the layout wiring of the integrated circuit.
在一些实施例中,开关输入部102和开关输出部103位于第一金属层,连接部104位于相对第一金属层远离框架区域101的第二金属层。通过如此设置,在根据开关的断开或者接通状态修改开关对应的开关标准单元100时,由于修改金属层位于远离框架区域101的金属层,可以减少修改版图层次。In some embodiments, the switch input portion 102 and the switch output portion 103 are located in a first metal layer, and the connection portion 104 is located in a second metal layer relatively far from the frame area 101. By such an arrangement, when the switch standard unit 100 corresponding to the switch is modified according to the disconnection or connection state of the switch, since the modified metal layer is located in a metal layer far from the frame area 101, the modified layout level can be reduced.
在上述技术方案中,开关标准单元100包括设置于框架区域101内的开关输入部102、开关输出部103以及连接部104,连接部104包括在第一方向V1上间隔布置的第一连接结构1041和第二连接结构1042,第一连接结构1041连接开关输入部102,第二连接结构1042连接开关输出部103,开关输入部102作为开关标准单元100的一端,开关输出部103作为开关标准单元100的另一端,实现处于断开状态的开关对应的开关标准单元100的版图结构设计,便于使用自动工具对开关标准单元100进行自动布局布线,在版图初次设计时大大减少设计时间,快速解决设计问题。并且,使开关输入部102和开关输出部103在第一方向V1上延伸,使第一连接结构1041和第二连接结构1042在第二方向V2上延伸,均有利于简化在自动生成集成电路的版图时的布线。此外,在版图设计时可以根据开关的断开或者接通状态修改开关标准单元100,修改时仅需在第一连接结构1041和第二连接结构1042之间设置桥接部109,修改后仍能符合金属层设计规则,也不会出现短路问题,且修改时仅涉及一层金属,减少改版层次。In the above technical solution, the switch standard unit 100 includes a switch input part 102, a switch output part 103 and a connection part 104 arranged in the frame area 101, and the connection part 104 includes a first connection structure 1041 and a second connection structure 1042 arranged at intervals in the first direction V1, the first connection structure 1041 connects the switch input part 102, and the second connection structure 1042 connects the switch output part 103, the switch input part 102 serves as one end of the switch standard unit 100, and the switch output part 103 serves as the other end of the switch standard unit 100, so as to realize the layout structure design of the switch standard unit 100 corresponding to the switch in the disconnected state, facilitate the use of automatic tools to automatically layout and route the switch standard unit 100, greatly reduce the design time when the layout is first designed, and quickly solve the design problem. In addition, the switch input part 102 and the switch output part 103 are extended in the first direction V1, and the first connection structure 1041 and the second connection structure 1042 are extended in the second direction V2, which are conducive to simplifying the wiring when the layout of the integrated circuit is automatically generated. In addition, during the layout design, the switch standard unit 100 can be modified according to the disconnected or connected state of the switch. During the modification, only a bridge portion 109 needs to be set between the first connection structure 1041 and the second connection structure 1042. After the modification, the metal layer design rules can still be met, and there will be no short circuit problem. Moreover, the modification involves only one layer of metal, which reduces the number of revision levels.
在一些实施例中,框架区域101包括沿第二方向V2布置的第一框架单元1011和第二框架单元1012。开关输入部102位于第一框架单元1011内,且在第一框架单元1011内沿第一方向V1上延伸。开关输出部103位于第二框架单元1012内,且在第二框架单元1012内沿第一方向V1上延伸。通过使开关输入部102位于第一框架单元1011内,使开关输出部103位于第二框架内,实现开关输入部102与开关输出部103之间隔离,避免开关输入部102和开关输出部103之间由于距离过近导致短接,还能保证开关输入部102和开关输出部103满足金属层设计规则。In some embodiments, the frame area 101 includes a first frame unit 1011 and a second frame unit 1012 arranged along the second direction V2. The switch input unit 102 is located in the first frame unit 1011 and extends in the first direction V1 in the first frame unit 1011. The switch output unit 103 is located in the second frame unit 1012 and extends in the first direction V1 in the second frame unit 1012. By making the switch input unit 102 located in the first frame unit 1011 and the switch output unit 103 located in the second frame, the switch input unit 102 and the switch output unit 103 are isolated from each other, and short circuit between the switch input unit 102 and the switch output unit 103 due to too close distance is avoided, and the switch input unit 102 and the switch output unit 103 can also be ensured to meet the metal layer design rules.
第一连接结构1041的一部分位于第一框架单元1011内,第一连接结构1041的另一部分位于第二框架单元1012内。第二连接结构1042的一部分位于第一框架单元1011内,第二连接结构1042的另一部分位于第二框架单元1012内。通过如此设置,若需使用处于接通状态的开关对应的开关标准单元100时,可在第一框架单元1011和第二框架单元1012所对应区域布置桥接部109,即可生成处于接通状态的开关对应的开关标准单元100,桥接部109可设置区域比较大,可以适应不同需求。A portion of the first connection structure 1041 is located in the first frame unit 1011, and another portion of the first connection structure 1041 is located in the second frame unit 1012. A portion of the second connection structure 1042 is located in the first frame unit 1011, and another portion of the second connection structure 1042 is located in the second frame unit 1012. By such an arrangement, if it is necessary to use the switch standard unit 100 corresponding to the switch in the on state, the bridge portion 109 can be arranged in the area corresponding to the first frame unit 1011 and the second frame unit 1012, and the switch standard unit 100 corresponding to the switch in the on state can be generated. The bridge portion 109 can be arranged in a relatively large area to meet different needs.
在一些实施例中,开关输入部102通过第一导电孔107与第一连接结构1041连接,开关输出部103通过第二导电孔108与第二连接结构1042连接。通过如此设置,实现位于不同层的开关输入部102与第一连接结构1041之间电连接,以及位于不同层的开关输出部103与第二连接结构1042之间电连接。In some embodiments, the switch input part 102 is connected to the first connection structure 1041 through the first conductive via 107, and the switch output part 103 is connected to the second connection structure 1042 through the second conductive via 108. By such an arrangement, the switch input part 102 located at different layers is electrically connected to the first connection structure 1041, and the switch output part 103 located at different layers is electrically connected to the second connection structure 1042.
在一些实施例中,第一导电孔107在第一方向V1上的边缘与第一连接结构1041在第一方向V1上的边缘之间的最短距离大于等于第一预设距离。第一导电孔107在第二方 向V2上的边缘与第一连接结构1041在第二方向V2上的边缘之间的最短距离大于等于第二预设距离。In some embodiments, the shortest distance between the edge of the first conductive via 107 in the first direction V1 and the edge of the first connection structure 1041 in the first direction V1 is greater than or equal to the first preset distance. The shortest distance between the edge in the direction V2 and the edge of the first connection structure 1041 in the second direction V2 is greater than or equal to the second preset distance.
如图7所示,第一导电孔107在第一方向V1上的上边缘与第一连接结构1041在第一方向V1上的上边缘之间的最短距离G1大于等于第一预设距离,且第一导电孔107在第一方向V1上的下边缘与第一连接结构1041在第一方向V1上的下边缘之间的最短距离G2大于等于第一预设距离。As shown in Figure 7, the shortest distance G1 between the upper edge of the first conductive hole 107 in the first direction V1 and the upper edge of the first connecting structure 1041 in the first direction V1 is greater than or equal to the first preset distance, and the shortest distance G2 between the lower edge of the first conductive hole 107 in the first direction V1 and the lower edge of the first connecting structure 1041 in the first direction V1 is greater than or equal to the first preset distance.
第一导电孔107在第二方向V2上的左侧边缘与第一连接结构1041在第二方向V2上的左侧边缘之间的最短距离F1大于等于第二预设距离。The shortest distance F1 between the left edge of the first conductive via 107 in the second direction V2 and the left edge of the first connection structure 1041 in the second direction V2 is greater than or equal to the second preset distance.
其中,第一预设距离和第二预设距离是根据金属层设计规则设定的。The first preset distance and the second preset distance are set according to metal layer design rules.
通过如此设置,保证第一导电孔107与第一连接结构1041之间的电信号传输。By such arrangement, the transmission of electrical signals between the first conductive via 107 and the first connection structure 1041 is ensured.
第二导电孔108在第一方向V1上的边缘与第二连接结构1042在第一方向V1上的边缘之间的最短距离大于等于第一预设距离。第二导电孔108在第二方向V2上的边缘与第二连接结构1042在第二方向V2上的边缘之间的最短距离大于等于第二预设距离。The shortest distance between the edge of the second conductive via 108 in the first direction V1 and the edge of the second connection structure 1042 in the first direction V1 is greater than or equal to the first preset distance. The shortest distance between the edge of the second conductive via 108 in the second direction V2 and the edge of the second connection structure 1042 in the second direction V2 is greater than or equal to the second preset distance.
如图7所示,第二导电孔108在第一方向V1上的上边缘与第二连接结构1042在第一方向V1上的上边缘之间的最短距离G3大于等于第一预设距离。第二导电孔108在第一方向V1上的下边缘与第二连接结构1042在第一方向V1上的下边缘之间的最短距离G4大于等于第一预设距离。第二导电孔108在第二方向V2上的右边缘与第二连接结构1042在第二方向V2上的右边缘之间的最短距离F2大于等于第二预设距离。As shown in FIG7 , the shortest distance G3 between the upper edge of the second conductive via 108 in the first direction V1 and the upper edge of the second connection structure 1042 in the first direction V1 is greater than or equal to the first preset distance. The shortest distance G4 between the lower edge of the second conductive via 108 in the first direction V1 and the lower edge of the second connection structure 1042 in the first direction V1 is greater than or equal to the first preset distance. The shortest distance F2 between the right edge of the second conductive via 108 in the second direction V2 and the right edge of the second connection structure 1042 in the second direction V2 is greater than or equal to the second preset distance.
通过如此设置,保证第二导电孔108与第二连接结构1042之间的电信号传输。By such arrangement, the transmission of electrical signals between the second conductive via 108 and the second connection structure 1042 is ensured.
在一些实施例中,第一连接结构1041与第二连接结构1042在第一方向V1上的最小间距大于等于第三预设距离。In some embodiments, a minimum distance between the first connection structure 1041 and the second connection structure 1042 in the first direction V1 is greater than or equal to a third preset distance.
如图7所示,第一连接结构1041在第一方向V1上的下边缘与第二连接结构1042在第一方向V1上的上边缘的最短间距H大于等于第三预设距离。As shown in FIG. 7 , the shortest distance H between the lower edge of the first connection structure 1041 in the first direction V1 and the upper edge of the second connection structure 1042 in the first direction V1 is greater than or equal to the third preset distance.
通过如此设置,保证第一连接结构1041和第二连接结构1042之间不会因为间距过小而出现短接。By such an arrangement, it is ensured that there is no short circuit between the first connection structure 1041 and the second connection structure 1042 due to too small a distance.
在一些实施例中,如图3所示,开关标准单元100包括第一电源布线部105和第二电源布线部106。第一电源布线部105和第二电源布线部106在第一方向V1上间隔排布,且第一电源布线部105和第二电源布线部106沿第二方向V2延伸。3 , the switch standard unit 100 includes a first power wiring portion 105 and a second power wiring portion 106. The first power wiring portion 105 and the second power wiring portion 106 are arranged alternately in a first direction V1, and extend along a second direction V2.
其中,开关输入部102、开关输出部103以及连接部104均位于第一电源布线部105和第二电源布线部106之间。The switch input portion 102 , the switch output portion 103 and the connection portion 104 are all located between the first power wiring portion 105 and the second power wiring portion 106 .
通过在开关标准单元100中设置第一电源布线部105和第二电源布线部106,便于在开关标准单元100和电源之间布线,简化在自动生成集成电路的版图时的布线。将第一电源布线部105和第二电源布线部106设置于开关输入部102、开关输出部103以及连接部104的外部,不影响开关标准单元100的核心部分布局。By providing the first power wiring section 105 and the second power wiring section 106 in the switch standard cell 100, it is convenient to wire between the switch standard cell 100 and the power supply, and the wiring when automatically generating the layout of the integrated circuit is simplified. The first power wiring section 105 and the second power wiring section 106 are provided outside the switch input section 102, the switch output section 103 and the connection section 104, without affecting the layout of the core part of the switch standard cell 100.
在一些实施例中,第一电源布线部105、第二电源布线部106和连接部104同层布置。由于第一电源布线部105、第二电源布线部106和连接部104之间距离比较远,设置在同层不会出现短接现象,保证开关标准单元100的可靠性。In some embodiments, the first power wiring portion 105, the second power wiring portion 106 and the connecting portion 104 are arranged on the same layer. Since the first power wiring portion 105, the second power wiring portion 106 and the connecting portion 104 are far apart, short circuit will not occur when they are arranged on the same layer, thereby ensuring the reliability of the switch standard unit 100.
如图8所示,本公开一实施例提供一种开关,开关包括衬底110和设置于衬底110 上的开关输入部102、开关输出部103以及连接部104。As shown in FIG. 8 , an embodiment of the present disclosure provides a switch, the switch comprising a substrate 110 and a The switch input part 102, the switch output part 103 and the connection part 104 are provided on the substrate.
其中,开关输入部102和开关输出部103同层布置,也就是开关输入部102和开关输出端位于同一层金属,且开关输入部102和开关输出部103在第一方向V1上延伸。The switch input portion 102 and the switch output portion 103 are arranged on the same layer, that is, the switch input portion 102 and the switch output end are located on the same metal layer, and the switch input portion 102 and the switch output portion 103 extend in the first direction V1.
开关作为两端器件,开关输入部102作为开关的其中一端,开关输出部103作为开关的另一端。The switch is a two-terminal device, the switch input portion 102 is one end of the switch, and the switch output portion 103 is the other end of the switch.
连接部104与开关输入部102和开关输出部103异层布置,也就是连接部104与开关输入部102位于不同金属层,连接部104包括第一连接结构1041和第二连接结构1042,第一连接结构1041和第二连接结构1042沿第一方向V1间隔布置,且第一连接结构1041和第二连接结构1042均在第二方向V2上延伸。第一连接结构1041与开关输入部102连接,第二连接结构1042与开关输出部103连接。The connection part 104 is arranged in different layers from the switch input part 102 and the switch output part 103, that is, the connection part 104 and the switch input part 102 are located in different metal layers. The connection part 104 includes a first connection structure 1041 and a second connection structure 1042. The first connection structure 1041 and the second connection structure 1042 are arranged at intervals along the first direction V1, and the first connection structure 1041 and the second connection structure 1042 both extend in the second direction V2. The first connection structure 1041 is connected to the switch input part 102, and the second connection structure 1042 is connected to the switch output part 103.
开关输入部102作为开关的其中一端,开关输出部103作为开关的另一端,通过设置第一连接结构1041和第二连接结构1042沿第一方向V1间隔布置,使第一连接结构1041与开关输入部102连接,第二连接结构1042与开关输出部103连接,使得开关内开关输入部102和开关输出部103之间处于断开状态。The switch input part 102 serves as one end of the switch, and the switch output part 103 serves as the other end of the switch. The first connection structure 1041 and the second connection structure 1042 are arranged at intervals along the first direction V1, so that the first connection structure 1041 is connected to the switch input part 102, and the second connection structure 1042 is connected to the switch output part 103, so that the switch input part 102 and the switch output part 103 in the switch are in a disconnected state.
在上述技术方案中,开关包括衬底110和设置于衬底110上的开关输入部102、开关输出部103以及连接部104,连接部104包括在第一方向V1上间隔布置的第一连接结构1041和第二连接结构1042,第一连接结构1041连接开关输入部102,第二连接结构1042连接开关输出部103,开关输入部102作为开关标准单元100的一端,开关输出部103作为开关标准单元100的另一端,有利于基于该开关结构设计开关标准单元100,便于使用自动工具对开关标准单元100进行自动布局布线,实现自动化生成集成电路的版图,在版图初次设计时大大减少设计时间,快速解决设计问题。In the above technical solution, the switch includes a substrate 110 and a switch input part 102, a switch output part 103 and a connecting part 104 arranged on the substrate 110. The connecting part 104 includes a first connecting structure 1041 and a second connecting structure 1042 arranged at intervals in a first direction V1. The first connecting structure 1041 is connected to the switch input part 102, and the second connecting structure 1042 is connected to the switch output part 103. The switch input part 102 serves as one end of the switch standard unit 100, and the switch output part 103 serves as the other end of the switch standard unit 100. This is conducive to designing the switch standard unit 100 based on the switch structure, facilitating the use of automatic tools to automatically layout and route the switch standard unit 100, and realizing automatic generation of the layout of the integrated circuit, which greatly reduces the design time when the layout is initially designed and quickly solves the design problems.
在一些实施例中,开关输入部102和开关输出部103位于第一金属层,连接部104位于相对第一金属层远离衬底110的第二金属层。通过如此设置,基于开关的结构设计开关标准单元100,在根据开关的断开或者接通状态修改开关标准单元100时,由于修改金属层位于远离衬底110的金属层,可以减少修改版图层次。In some embodiments, the switch input portion 102 and the switch output portion 103 are located in a first metal layer, and the connection portion 104 is located in a second metal layer relatively far from the substrate 110 relative to the first metal layer. By such an arrangement, the switch standard unit 100 is designed based on the structure of the switch, and when the switch standard unit 100 is modified according to the disconnection or connection state of the switch, the modified metal layer is located in a metal layer far from the substrate 110, and the modification layout level can be reduced.
继续参考图8,开关包括第一电源布线部105和第二电源布线部106。第一电源布线部105和第二电源布线部106在第一方向V1上间隔排布,且第一电源布线部105和第二电源布线部106沿第二方向V2延伸。8 , the switch includes a first power wiring portion 105 and a second power wiring portion 106. The first power wiring portion 105 and the second power wiring portion 106 are arranged in a first direction V1 and extend in a second direction V2.
其中,开关输入部102、开关输出部103以及连接部104均位于第一电源布线部105和第二电源布线部106之间。The switch input portion 102 , the switch output portion 103 and the connection portion 104 are all located between the first power wiring portion 105 and the second power wiring portion 106 .
通过在开关中设置第一电源布线部105和第二电源布线部106,在基于开关涉及开关标准单元100时,便于开关标准单元100和电源之间布线,简化在自动生成集成电路的版图时的布线。将第一电源布线部105和第二电源布线部106设置于开关输入部102、开关输出部103以及连接部104的外部,不影响开关标准单元100的核心部分布局。By setting the first power wiring section 105 and the second power wiring section 106 in the switch, when the switch standard unit 100 is involved based on the switch, it is convenient to wire the switch standard unit 100 and the power supply, and the wiring when the layout of the integrated circuit is automatically generated is simplified. The first power wiring section 105 and the second power wiring section 106 are set outside the switch input section 102, the switch output section 103 and the connection section 104, and the layout of the core part of the switch standard unit 100 is not affected.
在一些实施例中,第一电源布线部105、第二电源布线部106和连接部104同层布置。在基于开关设计开关标准单元100时,由于第一电源布线部105、第二电源布线部106和连接部104之间距离比较远,设置在同层不会出现短接现象,保证开关的可靠性。In some embodiments, the first power wiring portion 105, the second power wiring portion 106 and the connecting portion 104 are arranged on the same layer. When the switch standard unit 100 is designed based on the switch, since the first power wiring portion 105, the second power wiring portion 106 and the connecting portion 104 are far apart, they are arranged on the same layer without short circuit, thereby ensuring the reliability of the switch.
如图9所示,本公开一实施例提供一种版图设计方法,版图设计方法应用于电子设 备,版图设计方法包括如下步骤:As shown in FIG9 , an embodiment of the present disclosure provides a layout design method, which is applied to electronic devices. The layout design method includes the following steps:
S101、获得电路原理图。S101, obtaining a circuit schematic diagram.
其中,电路原理图包括至少一个开关和至少一个门级电路单元,电路原理图是用于表征至少一个开关和至少一个门级电路单元之间连接关系。The circuit schematic diagram includes at least one switch and at least one gate-level circuit unit, and the circuit schematic diagram is used to characterize the connection relationship between the at least one switch and the at least one gate-level circuit unit.
S102、根据电路原理图获得连接关系以及开关的所处状态。S102: Obtain the connection relationship and the state of the switch according to the circuit schematic.
其中,连接关系包括开关和门级电路单元的连接关系、多个开关之间连接关系以及多个门级电路单元的连接关系中一种或多种组合。The connection relationship includes one or more combinations of a connection relationship between a switch and a gate-level circuit unit, a connection relationship between multiple switches, and a connection relationship between multiple gate-level circuit units.
在一些实施例中,当电路原理图中包括一个开关和一个门级电路单元时,获得该开关与该门级电路单元之间连接关系。In some embodiments, when the circuit schematic includes a switch and a gate-level circuit unit, a connection relationship between the switch and the gate-level circuit unit is obtained.
在一些实施例中,当电路原理图中包括一个开关和至少一个门级电路单元时,获得该开关与一个或多个门级电路单元之间连接关系。还可以获得多个门级电路单元之间连接关系。In some embodiments, when the circuit schematic includes a switch and at least one gate-level circuit unit, the connection relationship between the switch and one or more gate-level circuit units is obtained. The connection relationship between multiple gate-level circuit units can also be obtained.
在一些实施例中,当电路原理图中包括多个开关和多个门级电路单元时,获得每个开关与一个或多个门级电路单元之间连接关系,或者每个开关与一个或者多个其他开关之间的连接关系,还可以获得门级电路单元与一个或多个其他门级电路之间连接关系。In some embodiments, when the circuit schematic includes multiple switches and multiple gate-level circuit units, the connection relationship between each switch and one or more gate-level circuit units, or the connection relationship between each switch and one or more other switches is obtained, and the connection relationship between the gate-level circuit unit and one or more other gate-level circuits can also be obtained.
在一些实施例中,直接从电路原理图中提取信息,获得连接关系以及开关的所处状态。其中,开关的所处状态包括断开状态或者接通状态。In some embodiments, information is directly extracted from the circuit schematic to obtain the connection relationship and the state of the switch, wherein the state of the switch includes an off state or an on state.
在一些实施例中,根据电路原理图获得门级网表,并根据门级网表确定连接关系以及开关的所处状态。In some embodiments, a gate-level netlist is obtained according to a circuit schematic, and a connection relationship and a state of a switch are determined according to the gate-level netlist.
S103、当开关处于断开状态,调用开关标准单元100与门级电路单元对应的标准单元进行拼接。S103 , when the switch is in an off state, calling the switch standard cell 100 and the standard cell corresponding to the gate-level circuit cell for splicing.
其中,开关标准单元100对应的开关默认是处于断开状态,在电路原理图中开关处于断开状态时,则直接调用开关标准单元100与门级电路单元对应的标准单元进行拼接。其中,拼接是指将开关标准单元100与门级电路单元对应的标准单元相邻排布并对齐,再进行两个标准单元之间布线连接,实现两个标准单元之间相互连接。The switch corresponding to the switch standard unit 100 is in an off state by default. When the switch is in an off state in the circuit schematic, the switch standard unit 100 and the standard unit corresponding to the gate-level circuit unit are directly called for splicing. Splicing means arranging and aligning the switch standard unit 100 and the standard unit corresponding to the gate-level circuit unit adjacent to each other, and then wiring and connecting the two standard units to achieve mutual connection between the two standard units.
在一些实施例中,门级电路单元所对应标准单元包括第三电源布线部501和第四电源布线部502。其中,第三电源布线部501和第四电源布线部502之间间隔与开关标准单元100中第一电源布线部105和第二电源布线部106之间间隔相同。In some embodiments, the standard cell corresponding to the gate-level circuit cell includes a third power wiring portion 501 and a fourth power wiring portion 502. The interval between the third power wiring portion 501 and the fourth power wiring portion 502 is the same as the interval between the first power wiring portion 105 and the second power wiring portion 106 in the switch standard cell 100.
当开关标准单元100与门级电路单元所对应标准单元进行拼接时,第一电源布线部105与第三电源布线部501对齐拼接以使二者接通,第二电源布线部106与第四电源布线部502对齐拼接以使二者接通。When the switch standard cell 100 is spliced with the standard cell corresponding to the gate-level circuit cell, the first power wiring portion 105 is aligned with the third power wiring portion 501 to connect the two, and the second power wiring portion 106 is aligned with the fourth power wiring portion 502 to connect the two.
继续参考图7,以门级电路单元为反相器为例,在反相器对应的标准单元700与开关标准单元100之间拼接时,反相器对应的标准单元700中第三电源布线部501在第一方向上的长度和开关标准单元100中第一电源布线部105在第一方向上的长度相同,反相器对应的标准单元700中第四电源布线部502在第一方向上的长度和开关标准单元100中第二电源布线部106在第一方向上的长度相同,反相器对应的标准单元700中第三电源布线部501和第四电源布线部502之间间隔和开关标准单元100中第一电源布线部105和第二电源布线部106之间间隔相同,通过如此设置,在反相器对应的标准单元700与 开关标准单元100之间进行对齐拼接时,第一电源布线部105与第三电源布线部501之间对齐后接通,第二电源布线部106与第四电源布线部502对齐后接通。Continuing to refer to FIG. 7 , taking the gate-level circuit unit as an inverter as an example, when the standard cell 700 corresponding to the inverter is spliced with the switch standard cell 100, the length of the third power wiring portion 501 in the standard cell 700 corresponding to the inverter in the first direction is the same as the length of the first power wiring portion 105 in the switch standard cell 100 in the first direction, the length of the fourth power wiring portion 502 in the standard cell 700 corresponding to the inverter in the first direction is the same as the length of the second power wiring portion 106 in the switch standard cell 100 in the first direction, and the interval between the third power wiring portion 501 and the fourth power wiring portion 502 in the standard cell 700 corresponding to the inverter is the same as the interval between the first power wiring portion 105 and the second power wiring portion 106 in the switch standard cell 100. By setting in this way, the standard cell 700 corresponding to the inverter and the switch standard cell 100 are connected. When the switch standard units 100 are aligned and spliced, the first power wiring portion 105 and the third power wiring portion 501 are aligned and connected, and the second power wiring portion 106 and the fourth power wiring portion 502 are aligned and connected.
S104、当开关处于接通状态,调用开关标准单元100与门级电路单元对应的标准单元进行拼接,并在第一连接结构1041和第二连接结构1042之间布置桥接部109以使第一连接结构1041和第二连接结构1042通过桥接部109连接。S104 , when the switch is in the on state, call the switch standard unit 100 and the standard unit corresponding to the gate-level circuit unit for splicing, and arrange a bridge portion 109 between the first connection structure 1041 and the second connection structure 1042 so that the first connection structure 1041 and the second connection structure 1042 are connected through the bridge portion 109 .
其中,当开关处于接通状态,在调用开关标准单元100与门级电路单元对应的标准单元进行拼接之后,还需要在该开关标准单元100的第一连接结构1041和第二连接结构1042之间布置桥接部109,使第一连接结构1041和第二连接结构1042通过桥接部109连接,修改后的开关标准单元100对应的开关从默认的断开状态变为接通状态。Among them, when the switch is in the on state, after calling the switch standard unit 100 and the standard unit corresponding to the gate-level circuit unit for splicing, it is also necessary to arrange a bridge portion 109 between the first connection structure 1041 and the second connection structure 1042 of the switch standard unit 100, so that the first connection structure 1041 and the second connection structure 1042 are connected through the bridge portion 109, and the switch corresponding to the modified switch standard unit 100 changes from the default off state to the on state.
在一些实施例中,桥接部109与第一连接结构1041和第二连接结构1042同层设置,在根据开关状态修改开关标准单元100时,减少修改版图层次。In some embodiments, the bridge portion 109 is disposed at the same layer as the first connection structure 1041 and the second connection structure 1042 , so that when the switch standard unit 100 is modified according to the switch state, the modification level of the layout is reduced.
在上述技术方案中,在进行版图设计时,获得电路原图,并根据电路原理图获得连接关系以及开关的所处状态,当开关处于断开状态,直接调用开关标准单元100与门级电路单元对应的标准单元进行拼接,当开关处于接通状态,调用开关标准单元100与门级电路单元对应的标准单元进行拼接,并在第一连接结构1041和第二连接结构1042之间布置桥接部109以使第一连接结构1041和第二连接结构1042通过桥接部109连接,实现自动化生成集成电路的版图,在版图初次设计时大大减少设计时间,快速解决设计问题。此外,在版图设计时可以根据开关的断开或者接通状态修改开关标准单元100,修改时仅需在第一连接结构1041和第二连接结构1042之间设置桥接部109,修改后仍能符合金属层设计规则,也不会出现短路问题,且修改时仅涉及一层金属,减少改版层次。In the above technical solution, when performing layout design, the circuit original diagram is obtained, and the connection relationship and the state of the switch are obtained according to the circuit schematic diagram. When the switch is in the disconnected state, the switch standard unit 100 is directly called to splice with the standard unit corresponding to the gate-level circuit unit. When the switch is in the connected state, the switch standard unit 100 is called to splice with the standard unit corresponding to the gate-level circuit unit, and a bridge portion 109 is arranged between the first connection structure 1041 and the second connection structure 1042 so that the first connection structure 1041 and the second connection structure 1042 are connected through the bridge portion 109, so as to realize automatic generation of the layout of the integrated circuit, greatly reduce the design time when the layout is first designed, and quickly solve the design problem. In addition, when designing the layout, the switch standard unit 100 can be modified according to the disconnected or connected state of the switch. When modifying, only the bridge portion 109 needs to be set between the first connection structure 1041 and the second connection structure 1042. After modification, it can still meet the metal layer design rules, and there will be no short circuit problem. In addition, when modifying, only one layer of metal is involved, reducing the revision level.
在一些实施例中,当电路原理图中包括多个开关,且任意两个开关存在连接关系时,两个开关通过设置于多晶硅层的布线连接。相应地,两个开关对应的开关标准单元100也通过多晶硅层的布线连接。通过如此设置,方便连接,同时可以节省金属层上线道。In some embodiments, when a circuit schematic includes multiple switches and any two switches are connected, the two switches are connected through wiring arranged on the polysilicon layer. Accordingly, the switch standard cells 100 corresponding to the two switches are also connected through wiring on the polysilicon layer. By setting in this way, the connection is convenient and the wiring on the metal layer can be saved.
在一些实施例中,门级电路单元之间通过设置于金属层的布线连接。该金属层可以为第一金属层。通过如此设置,方便连接,同时可以节省第二金属层上线道。In some embodiments, the gate-level circuit units are connected by wiring arranged on a metal layer. The metal layer may be a first metal layer. By so arranging, the connection is convenient and the wiring on the second metal layer can be saved.
在一些实施例中,当有两个开关标准单元100相邻拼接时,两个开关标准单元100的连接部104之间的最小间距大于等于第四预设距离,第四预设距离是根据金属层设计规则设定的。通过如此设置,在两个开关标准单元100进行拼接时,同层导电部不会出现短接。In some embodiments, when two switch standard units 100 are adjacently spliced, the minimum spacing between the connection portions 104 of the two switch standard units 100 is greater than or equal to a fourth preset distance, and the fourth preset distance is set according to the metal layer design rule. By setting in this way, when two switch standard units 100 are spliced, the conductive portions of the same layer will not be short-circuited.
在一些实施例中,两个相邻标准单元中位于同一层的导电部之间最小间距大于等于第四预设距离。例如:继续参考图7,反相器对应的标准单元700与开关标准单元100之间相邻布置,反相器中第一接线部401与开关标准单元100的连接部之间最小间距大于或等于第四预设距离,反相器中第二接线部402与开关标准单元100的连接部之间最小间距J大于或等于第四预设距离。通过如此设置,在两个标准单元进行拼接时,同层导电部不会出现短接。In some embodiments, the minimum spacing between the conductive parts located in the same layer of two adjacent standard cells is greater than or equal to the fourth preset distance. For example: Continuing to refer to FIG. 7, the standard cell 700 corresponding to the inverter is arranged adjacent to the switch standard cell 100, the minimum spacing between the first wiring part 401 in the inverter and the connection part of the switch standard cell 100 is greater than or equal to the fourth preset distance, and the minimum spacing J between the second wiring part 402 in the inverter and the connection part of the switch standard cell 100 is greater than or equal to the fourth preset distance. By setting in this way, when two standard cells are spliced, the conductive parts of the same layer will not be short-circuited.
下面以图10所示电路原理图说明本公开提供的版图设计方法,具体过程如下:The following is a circuit schematic diagram shown in FIG10 to illustrate the layout design method provided by the present disclosure. The specific process is as follows:
S201、获取电路原理图。 S201, obtaining a circuit schematic.
其中,如图10所示,电路原理图中包括四个开关和两个反相器。将四个开关标记为第一开关K1、第二开关K2、第三开关K3以及第四开关K4,将两个反相器标记为第一反相器Inv1和第二反相器Inv2。As shown in Fig. 10, the circuit schematic diagram includes four switches and two inverters. The four switches are marked as a first switch K1, a second switch K2, a third switch K3 and a fourth switch K4, and the two inverters are marked as a first inverter Inv1 and a second inverter Inv2.
S202、根据电路原理图获得连接关系以及开关的所处状态。S202: Obtain the connection relationship and the state of the switch according to the circuit schematic.
其中,获得两个开关之间连接关系:第一开关K1的第一端连接第三开关K3的第一端,第一开关K1的第二端连接第二开关K2的第一端,第三开关K3的第二端连接第四开关K4的第二端。The connection relationship between the two switches is obtained: the first end of the first switch K1 is connected to the first end of the third switch K3, the second end of the first switch K1 is connected to the first end of the second switch K2, and the second end of the third switch K3 is connected to the second end of the fourth switch K4.
获得两个反相器之间连接关系:第一反相器Inv1的输出端连接第二反相器Inv2的输入端。A connection relationship between the two inverters is obtained: the output end of the first inverter Inv1 is connected to the input end of the second inverter Inv2.
获得反相器与开关之间连接关系:第一开关K1的第二端连接第一反相器Inv1的输入端,第二反相器Inv2的输出端连接第四开关K4的第一端。第二开关K2的第二端连接接地端。The connection relationship between the inverter and the switch is obtained: the second end of the first switch K1 is connected to the input end of the first inverter Inv1, the output end of the second inverter Inv2 is connected to the first end of the fourth switch K4, and the second end of the second switch K2 is connected to the ground end.
第一开关K1和第四开关K4处于断开状态,第二开关K2和第三开关K3处于接通状态。The first switch K1 and the fourth switch K4 are in an off state, and the second switch K2 and the third switch K3 are in an on state.
S203、调用第一开关K1对应的开关标准单元131、第二开关K2对应的开关标准单元132、第三开关K3对应的开关标准单元133、第四开关K4对应的开关标准单元134、第一反相器Inv1对应的标准单元711以及第二反相器Inv2对应的标准单元712进行拼接。S203, calling the switch standard cell 131 corresponding to the first switch K1, the switch standard cell 132 corresponding to the second switch K2, the switch standard cell 133 corresponding to the third switch K3, the switch standard cell 134 corresponding to the fourth switch K4, the standard cell 711 corresponding to the first inverter Inv1, and the standard cell 712 corresponding to the second inverter Inv2 for splicing.
也就是,依次将第一开关K1对应的开关标准单元131、第二开关K2对应的开关标准单元132、第三开关K3对应的开关标准单元133、第四开关K4对应的开关标准单元134、第一反相器Inv1对应的标准单元711以及第二反相器Inv2对应的标准单元712依次相邻排布并对齐,再根据连接关系在上述标准单元中进行自动布线连接。That is, the switch standard cell 131 corresponding to the first switch K1, the switch standard cell 132 corresponding to the second switch K2, the switch standard cell 133 corresponding to the third switch K3, the switch standard cell 134 corresponding to the fourth switch K4, the standard cell 711 corresponding to the first inverter Inv1, and the standard cell 712 corresponding to the second inverter Inv2 are arranged adjacent to each other and aligned in sequence, and then automatic wiring connections are performed in the above standard cells according to the connection relationship.
在第二开关K2对应的开关标准单元132中第一连接结构1041和第二连接结构1042之间布置桥接部109,在第三开关K3对应的开关标准单元133中第一连接结构1041和第二连接结构1042之间布置桥接部109。A bridge 109 is arranged between the first connection structure 1041 and the second connection structure 1042 in the switch standard unit 132 corresponding to the second switch K2 , and a bridge 109 is arranged between the first connection structure 1041 and the second connection structure 1042 in the switch standard unit 133 corresponding to the third switch K3 .
通过上述步骤,生成如图11所示的版图结构。Through the above steps, the layout structure shown in FIG. 11 is generated.
本领域技术人员在考虑说明书及实践这里公开的发明后,将容易想到本公开的其它实施方案。本公开旨在涵盖本公开的任何变型、用途或者适应性变化,这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的,本公开的真正范围和精神由下面的权利要求书指出。Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. The present disclosure is intended to cover any variations, uses or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The description and examples are to be considered exemplary only, and the true scope and spirit of the present disclosure are indicated by the following claims.
应当理解的是,本公开并不局限于上面已经描述并在附图中示出的精确结构,并且可以在不脱离其范围进行各种修改和改变。本公开的范围仅由所附的权利要求书来限制。 It should be understood that the present disclosure is not limited to the exact structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims (15)

  1. 一种开关标准单元(100),包括:设置于框架区域(101)内的开关输入部(102)、开关输出部(103)以及连接部(104);A switch standard unit (100) comprises: a switch input portion (102), a switch output portion (103) and a connection portion (104) arranged in a frame area (101);
    所述开关输入部(102)和所述开关输出部(103)同层布置,且在第一方向上延伸;The switch input portion (102) and the switch output portion (103) are arranged in the same layer and extend in a first direction;
    所述连接部(104)与所述开关输入部(102)和所述开关输出部(103)异层布置,包括沿第一方向间隔布置且均在第二方向上延伸的第一连接结构(1041)和第二连接结构(1042);所述第一连接结构(1041)与所述开关输入部(102)连接,所述第二连接结构(1042)与所述开关输出部(103)连接。The connecting portion (104) is arranged in different layers from the switch input portion (102) and the switch output portion (103), and comprises a first connecting structure (1041) and a second connecting structure (1042) which are arranged at intervals along a first direction and both extend in a second direction; the first connecting structure (1041) is connected to the switch input portion (102), and the second connecting structure (1042) is connected to the switch output portion (103).
  2. 根据权利要求1所述的开关标准单元(100),其中,所述框架区域(101)包括沿第二方向布置的第一框架单元(1011)和第二框架单元(1012);The switch standard unit (100) according to claim 1, wherein the frame area (101) comprises a first frame unit (1011) and a second frame unit (1012) arranged along the second direction;
    所述开关输入部(102)位于所述第一框架单元(1011)内,所述开关输出部(103)位于所述第二框架单元(1012)内;所述第一连接结构(1041)一部分位于所述第一框架单元(1011)内,另一部分位于所述第二框架单元(1012)内;所述第二连接结构(1042)一部分位于所述第一框架单元(1011)内,另一部分位于所述第二框架单元(1012)内。The switch input portion (102) is located in the first frame unit (1011), and the switch output portion (103) is located in the second frame unit (1012); a portion of the first connection structure (1041) is located in the first frame unit (1011), and another portion is located in the second frame unit (1012); a portion of the second connection structure (1042) is located in the first frame unit (1011), and another portion is located in the second frame unit (1012).
  3. 根据权利要求1或2所述的开关标准单元(100),其中,所述开关输入部(102)通过第一导电孔(107)与所述第一连接结构(1041)连接,所述开关输出部(103)通过第二导电孔(108)与所述第二连接结构(1042)连接。The switch standard unit (100) according to claim 1 or 2, wherein the switch input portion (102) is connected to the first connection structure (1041) through a first conductive hole (107), and the switch output portion (103) is connected to the second connection structure (1042) through a second conductive hole (108).
  4. 根据权利要求3所述的开关标准单元(100),其中,所述第一导电孔(107)在所述第一方向上的边缘与所述第一连接结构(1041)在所述第一方向上的边缘之间的最短距离大于等于第一预设距离;所述第一导电孔(107)在所述第二方向上的边缘与所述第一连接结构(1041)在所述第二方向上的边缘之间的最短距离大于等于第二预设距离;The switch standard unit (100) according to claim 3, wherein the shortest distance between the edge of the first conductive hole (107) in the first direction and the edge of the first connection structure (1041) in the first direction is greater than or equal to a first preset distance; the shortest distance between the edge of the first conductive hole (107) in the second direction and the edge of the first connection structure (1041) in the second direction is greater than or equal to a second preset distance;
    所述第二导电孔(108)在所述第一方向上的边缘与所述第二连接结构(1042)在所述第一方向上的边缘之间的最短距离大于等于第一预设距离;所述第二导电孔(108)在所述第二方向上的边缘与所述第二连接结构(1042)在所述第二方向上的边缘之间的最短距离大于等于第二预设距离。The shortest distance between the edge of the second conductive hole (108) in the first direction and the edge of the second connecting structure (1042) in the first direction is greater than or equal to a first preset distance; the shortest distance between the edge of the second conductive hole (108) in the second direction and the edge of the second connecting structure (1042) in the second direction is greater than or equal to a second preset distance.
  5. 根据权利要求4所述的开关标准单元(100),其中,所述第一连接结构(1041)与所述第二连接结构(1042)在所述第一方向上的最小间距大于等于第三预设距离。The switch standard unit (100) according to claim 4, wherein a minimum spacing between the first connection structure (1041) and the second connection structure (1042) in the first direction is greater than or equal to a third preset distance.
  6. 根据权利要求1至5任一项所述的开关标准单元(100),其中,The switch standard unit (100) according to any one of claims 1 to 5, wherein:
    所述标准单元包括在所述第一方向上间隔排布且沿所述第二方向延伸的第一电源布线部(105)和第二电源布线部(106);The standard unit comprises a first power wiring portion (105) and a second power wiring portion (106) which are arranged at intervals in the first direction and extend along the second direction;
    所述开关输入部(102)、所述开关输出部(103)以及所述连接部(104)位于所述第一电源布线部(105)和所述第二电源布线部(106)之间。The switch input portion (102), the switch output portion (103), and the connection portion (104) are located between the first power wiring portion (105) and the second power wiring portion (106).
  7. 根据权利要求6所述的开关标准单元(100),其中,所述第一电源布线部(105)、所述第二电源布线部(106)和所述连接部(104)同层布置。The switch standard unit (100) according to claim 6, wherein the first power wiring portion (105), the second power wiring portion (106) and the connection portion (104) are arranged in the same layer.
  8. 一种开关,包括设置于衬底(110)上的开关输入部(102)、开关输出部(103)以及连接部(104);A switch comprises a switch input portion (102), a switch output portion (103) and a connecting portion (104) arranged on a substrate (110);
    所述开关输入部(102)和所述开关输出部(103)同层布置,且在第一方向上延伸; The switch input portion (102) and the switch output portion (103) are arranged in the same layer and extend in a first direction;
    所述连接部(104)与所述开关输入部(102)和所述开关输出部(103)异层布置,包括沿第一方向间隔布置且均在第二方向上延伸的第一连接结构(1041)和第二连接结构(1042);所述第一连接结构(1041)与所述开关输入部(102)连接,所述第二连接结构(1042)与所述开关输出部(103)连接。The connecting portion (104) is arranged in different layers from the switch input portion (102) and the switch output portion (103), and comprises a first connecting structure (1041) and a second connecting structure (1042) which are arranged at intervals along a first direction and both extend in a second direction; the first connecting structure (1041) is connected to the switch input portion (102), and the second connecting structure (1042) is connected to the switch output portion (103).
  9. 根据权利要求8所述的开关,其中,所述开关输入部(102)和所述开关输出部(103)位于第一金属层,所述连接部(104)位于相对所述第一金属层远离所述衬底(110)的第二金属层。The switch according to claim 8, wherein the switch input portion (102) and the switch output portion (103) are located on a first metal layer, and the connecting portion (104) is located on a second metal layer away from the substrate (110) relative to the first metal layer.
  10. 一种版图设计方法,包括:A layout design method, comprising:
    获得电路原理图,所述电路原理图包括至少一个开关和至少一个门级电路单元;Obtaining a circuit schematic diagram, wherein the circuit schematic diagram includes at least one switch and at least one gate-level circuit unit;
    根据所述电路原理图获得连接关系以及所述开关的所处状态;其中,所述连接关系包括所述开关和所述门级电路单元的连接关系、多个所述开关之间连接关系以及多个所述门级电路单元的连接关系中至少一种;Obtaining a connection relationship and a state of the switch according to the circuit schematic; wherein the connection relationship includes at least one of a connection relationship between the switch and the gate-level circuit unit, a connection relationship between a plurality of the switches, and a connection relationship between a plurality of the gate-level circuit units;
    当所述开关处于断开状态,根据所述连接关系调用如权利要求1至7任一项所述的开关标准单元(100)与所述门级电路单元对应的标准单元进行拼接;When the switch is in an off state, calling the switch standard unit (100) according to any one of claims 1 to 7 and the standard unit corresponding to the gate-level circuit unit for splicing according to the connection relationship;
    当所述开关处于接通状态,根据所述连接关系调用如权利要求1至7任一项所述的开关标准单元(100)与所述门级电路单元对应的标准单元进行拼接,并在所述第一连接结构(1041)和所述第二连接结构(1042)之间布置桥接部(109)以使所述第一连接结构(1041)和所述第二连接结构(1042)通过所述桥接部(109)连接。When the switch is in an on state, the switch standard unit (100) according to any one of claims 1 to 7 is called to be spliced with the standard unit corresponding to the gate-level circuit unit according to the connection relationship, and a bridge portion (109) is arranged between the first connection structure (1041) and the second connection structure (1042) so that the first connection structure (1041) and the second connection structure (1042) are connected through the bridge portion (109).
  11. 根据权利要求10所述的版图设计方法,其中,所述桥接部(109)与所述第一连接结构(1041)和所述第二连接结构(1042)同层设置。The layout design method according to claim 10, wherein the bridge portion (109) is arranged in the same layer as the first connection structure (1041) and the second connection structure (1042).
  12. 根据权利要求10或11所述的版图设计方法,其中,根据所述电路原理图获得连接关系以及所述开关的所处状态,具体包括:The layout design method according to claim 10 or 11, wherein obtaining the connection relationship and the state of the switch according to the circuit schematic diagram specifically includes:
    根据所述电路原理图获得门级网表,并根据所述门级网表确定所述连接关系以及所述开关的所处状态。A gate-level netlist is obtained according to the circuit schematic, and the connection relationship and the state of the switch are determined according to the gate-level netlist.
  13. 根据权利要求10至12中任意一项所述的版图设计方法,其中,当有两个开关标准单元(100)相邻拼接时,两个所述开关标准单元(100)的所述连接部(104)之间的最小间距大于等于第四预设距离。The layout design method according to any one of claims 10 to 12, wherein when two switch standard units (100) are adjacently spliced, a minimum spacing between the connecting portions (104) of the two switch standard units (100) is greater than or equal to a fourth preset distance.
  14. 根据权利要求10至12中任意一项所述的版图设计方法,其中,当所述电路原理图中包括多个所述开关,且任意两个所述开关存在连接关系时,两个所述开关通过设置于多晶硅层的布线连接。According to the layout design method according to any one of claims 10 to 12, when the circuit schematic includes a plurality of the switches and any two of the switches are connected, the two switches are connected via wiring arranged in the polysilicon layer.
  15. 根据权利要求10至12中任意一项所述的版图设计方法,其中,所述门级电路单元所对应标准单元包括第三电源布线部和第四电源布线部,且所述第三电源布线部和第四电源布线部之间间隔与所述开关标准单元(100)中第一电源布线部(105)和第二电源布线部(106)之间间隔相同;当所述开关标准单元(100)与所述门级电路单元所对应标准单元进行拼接时,所述第一电源布线部(105)与所述第三电源布线部对齐拼接以使二者接通,所述第二电源布线部(106)与所述第四电源布线部对齐拼接以使二者接通。 According to the layout design method according to any one of claims 10 to 12, wherein the standard cell corresponding to the gate-level circuit unit includes a third power wiring portion and a fourth power wiring portion, and the interval between the third power wiring portion and the fourth power wiring portion is the same as the interval between the first power wiring portion (105) and the second power wiring portion (106) in the switch standard cell (100); when the switch standard cell (100) is spliced with the standard cell corresponding to the gate-level circuit unit, the first power wiring portion (105) is aligned and spliced with the third power wiring portion so that the two are connected, and the second power wiring portion (106) is aligned and spliced with the fourth power wiring portion so that the two are connected.
PCT/CN2023/086028 2022-11-04 2023-04-03 Switch standard unit, switch, and layout design method WO2024093124A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202211379157.0A CN118036537A (en) 2022-11-04 2022-11-04 Switch standard unit, switch and layout design method
CN202211379157.0 2022-11-04

Publications (1)

Publication Number Publication Date
WO2024093124A1 true WO2024093124A1 (en) 2024-05-10

Family

ID=90929609

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/086028 WO2024093124A1 (en) 2022-11-04 2023-04-03 Switch standard unit, switch, and layout design method

Country Status (2)

Country Link
CN (1) CN118036537A (en)
WO (1) WO2024093124A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013065860A (en) * 2012-10-29 2013-04-11 Semiconductor Energy Lab Co Ltd Semiconductor integrated circuit
US20140089883A1 (en) * 2012-09-27 2014-03-27 Apple Inc. Area efficient power switch
US20140339647A1 (en) * 2013-05-14 2014-11-20 Globalfoundries Inc. Densely packed standard cells for integrated circuit products, and methods of making same
US20190221514A1 (en) * 2018-01-17 2019-07-18 Samsung Electronics Co., Ltd. Semiconductor device including switch cells
CN111832245A (en) * 2019-04-23 2020-10-27 三星电子株式会社 Integrated circuit including standard cells, method of manufacturing the same, and computing system
WO2022166126A1 (en) * 2021-02-05 2022-08-11 长鑫存储技术有限公司 Standard cell template and semiconductor structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140089883A1 (en) * 2012-09-27 2014-03-27 Apple Inc. Area efficient power switch
JP2013065860A (en) * 2012-10-29 2013-04-11 Semiconductor Energy Lab Co Ltd Semiconductor integrated circuit
US20140339647A1 (en) * 2013-05-14 2014-11-20 Globalfoundries Inc. Densely packed standard cells for integrated circuit products, and methods of making same
US20190221514A1 (en) * 2018-01-17 2019-07-18 Samsung Electronics Co., Ltd. Semiconductor device including switch cells
CN111832245A (en) * 2019-04-23 2020-10-27 三星电子株式会社 Integrated circuit including standard cells, method of manufacturing the same, and computing system
WO2022166126A1 (en) * 2021-02-05 2022-08-11 长鑫存储技术有限公司 Standard cell template and semiconductor structure

Also Published As

Publication number Publication date
CN118036537A (en) 2024-05-14

Similar Documents

Publication Publication Date Title
USRE49821E1 (en) Semiconductor integrated circuit
US7919792B2 (en) Standard cell architecture and methods with variable design rules
US10290653B2 (en) Integrated circuit layout structure
US8039874B2 (en) Semiconductor integrated circuit
US20080180132A1 (en) Semiconductor device and method of fabricating the same
US20110169099A1 (en) Semiconductor device with a transistor having different source and drain lengths
US9202784B2 (en) Semiconductor integrated circuit capacitance device
US6763511B2 (en) Semiconductor integrated circuit having macro cells and designing method of the same
KR20010029851A (en) Standard cell, standard cell array, and system and method for placing and routing standard cells
US10748933B2 (en) Semiconductor device
JP2002334933A (en) Integrated circuit having tap cell and method of arranging tap cell in integrated circuit
JP5776802B2 (en) Semiconductor integrated circuit
WO2024093124A1 (en) Switch standard unit, switch, and layout design method
JPH02285656A (en) Semiconductor integrated circuit of standard cell system
CN111934684B (en) Buffer, clock grid circuit and signal driving method
US6842886B2 (en) Basic cell of gate array semiconductor device, gate array semiconductor device, and layout method for gate array semiconductor device
JP6146437B2 (en) Semiconductor integrated circuit
JP6747544B2 (en) Semiconductor integrated circuit
JP6070731B2 (en) Semiconductor integrated circuit
JP7004038B2 (en) Semiconductor integrated circuit
JP2011165901A (en) Semiconductor device and layout routing method of the same
JP2023087694A (en) Semiconductor device
JP6524493B2 (en) Semiconductor integrated circuit
JPH03159155A (en) Automatic wiring of semiconductor layout cell
JP2013242755A (en) Method of designing semiconductor device, program, and layout of semiconductor device