WO2024082532A1 - 2.5d module structure with six-side protection and manufacturing method therefor - Google Patents

2.5d module structure with six-side protection and manufacturing method therefor Download PDF

Info

Publication number
WO2024082532A1
WO2024082532A1 PCT/CN2023/081843 CN2023081843W WO2024082532A1 WO 2024082532 A1 WO2024082532 A1 WO 2024082532A1 CN 2023081843 W CN2023081843 W CN 2023081843W WO 2024082532 A1 WO2024082532 A1 WO 2024082532A1
Authority
WO
WIPO (PCT)
Prior art keywords
adapter plate
chip
adapter
front side
module structure
Prior art date
Application number
PCT/CN2023/081843
Other languages
French (fr)
Chinese (zh)
Inventor
张春艳
孙鹏
Original Assignee
华进半导体封装先导技术研发中心有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华进半导体封装先导技术研发中心有限公司 filed Critical 华进半导体封装先导技术研发中心有限公司
Publication of WO2024082532A1 publication Critical patent/WO2024082532A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip

Definitions

  • the present invention relates to the field of semiconductor packaging technology, and in particular to a six-sided protected 2.5D module structure and a preparation method thereof.
  • the 2.5D module is prepared using the chip on wafer on substrate (CoWoS) process, after the chip is soldered to the adapter wafer by flip-chip or wire bonding, the chip assembled on the adapter wafer will be protected by the wafer plastic sealing process to improve the reliability of the chip. Then the product completes the TSV exposure, rewiring and solder joints on the back of the wafer, and then cuts it into single modules and finally mounts it on the substrate. Cutting exposes the four silicon-based sides of the adapter without any protection. Silicon cracks are prone to occur during subsequent use, and the reliability of the 2.5D module is not high.
  • CoWoS chip on wafer on substrate
  • Another method for preparing a 2.5D module has the following steps: cutting the adapter board into individual pieces, mounting them on the substrate through a flip-chip process, then mounting the chip on the front of the adapter board through wire bonding or flip-chip bonding, and finally protecting the adapter board and chip by applying a cover. Since the process is to cut the adapter board into individual pieces first, the four silicon-based sides of the adapter board are exposed in the later assembly process without any protection, and it is easy for the adapter board and chip to be damaged and fail due to collision during operation. Therefore, a 2.5D module structure that can achieve all-round protection is needed.
  • the task of the present invention is to provide a six-sided protected 2.5D module structure and a preparation method thereof, so as to realize all-round protection of the 2.5D module structure and improve the reliability of the 2.5D module structure.
  • the present invention provides a 2.5D module structure with six-sided protection, comprising:
  • a conductive through silicon via which passes through the adapter plate and is electrically connected to the pad and the redistribution layer;
  • a soldering pad which is located on the back side of the adapter board
  • a redistribution layer which is located on the front side of the adapter board and is electrically connected to the bumps;
  • a chip which is arranged on the front side of the adapter board
  • a first bottom filling layer which is located between the chip and the adapter board;
  • a plastic sealing layer which plastic seals the chip
  • the second bottom filling layer is located between the substrate and the adapter plate.
  • the present invention also provides a six-sided protected 2.5D module structure, comprising:
  • a conductive through silicon via which passes through the adapter plate and is electrically connected to the pad and the redistribution layer;
  • a soldering pad which is located on the back side of the adapter board
  • a redistribution layer which is located on the front side of the adapter board and is electrically connected to the bumps;
  • a first bottom filling layer which is located between the substrate and the adapter plate;
  • a chip which is arranged on the front side of the adapter board
  • a second underfill layer which is located between the chip and the adapter board.
  • the cover is arranged on the chip, wherein the periphery of the cover is connected to the substrate, and the top of the cover is connected to the back side of the chip.
  • the front side of the chip has pins, and the pins are welded to the bumps, so that the chip is arranged on the front side of the adapter board.
  • the substrate is connected to the solder balls so that the adapter plate is arranged on the substrate.
  • the present invention also provides a method for preparing a six-sided protected 2.5D module structure, comprising:
  • the back side of the adapter board is thinned to expose the conductive through silicon via, and a solder pad is arranged on the conductive through silicon via, and then a solder ball is arranged on the solder pad;
  • the present invention also provides a method for preparing a six-sided protected 2.5D module structure, comprising:
  • the back side of the transfer board is thinned to expose the conductive silicon through via, and a pad is arranged on the conductive silicon through via, and then a solder ball is arranged on the pad, and a single transfer board is formed by cutting along a cutting path;
  • the cover is arranged on the chip, wherein the periphery of the cover is connected to the substrate, and the top of the cover is connected to the back side of the chip.
  • the cutting path is formed on the front side of the adapter plate by a plasma dry etching method or a mechanical blade half-cutting method.
  • the side surface of the interposer in the single package structure is covered by the dry film.
  • the side surface of the single adapter plate is covered by the dry film.
  • the present invention has at least the following beneficial effects: the present invention discloses a six-sided protected 2.5D module structure and a preparation method thereof, wherein a cutting path is formed on an adapter plate and filled with a dry film, and after the cutting step, the sides of the adapter plate are covered with a dry film to form protection.
  • This method achieves all-round protection of the 2.5D module structure without almost increasing the manufacturing process and cost of the 2.5D module structure, thereby improving the reliability of the module.
  • FIGS. 1A to 1I are schematic cross-sectional views showing a process for preparing a 2.5D module structure with six-sided protection according to an embodiment of the present invention
  • FIGS. 2A to 2G are schematic cross-sectional views showing a process of preparing a 2.5D module structure with six-sided protection and a cover according to an embodiment of the present invention
  • FIG3 shows a 2.5D module structure with six-sided protection according to an embodiment of the present invention.
  • FIG. 4 shows a 2.5D module structure with six-side protection according to an embodiment of the present invention.
  • the quantifiers "a”, “an” and “an” do not exclude the presence of a plurality of elements.
  • the terms “center”, “longitudinal”, “lateral”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside” and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present invention and the like. The description is simplified, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention.
  • the terms “first” and “second” are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.
  • the embodiments of the present invention describe the process steps in a specific order, but this is only for the convenience of distinguishing the steps, and does not limit the sequence of the steps. In different embodiments of the present invention, the sequence of the steps can be adjusted according to the adjustment of the process.
  • the side of the adapter board in the 2.5D module structure is exposed silicon, which means that the rest of the entire 2.5D module is wrapped by resin material, which can effectively resist drop tests. Only the small section of the adapter board on the four sides is exposed silicon-based material. Silicon is a brittle material. Without the protection of resin, it is difficult to meet the drop test requirements.
  • the six-sided protected 2.5D module structure and its preparation method proposed by the present invention realize all-round protection of the module and improve the reliability of the module without almost increasing the preparation process and cost of the 2.5D module.
  • FIGS. 1A to 1I are schematic cross-sectional views of a process for preparing a 2.5D module structure with six-side protection according to an embodiment of the present invention.
  • a method for preparing a six-sided protected 2.5D module structure comprises the following steps:
  • Step 1 as shown in FIG. 1A, a conductive silicon through via 101 is formed on the front of the adapter board 100, and a cutting path 102 is formed.
  • a through hole is first etched on the front of the adapter board 100, and then metal is filled to form the conductive silicon through via 101.
  • the cutting path 102 is formed on the front of the adapter board 100 by a plasma dry etching method or a mechanical blade half-cutting method.
  • Step 2 as shown in FIG. 1B , fill the dicing street 102 with a dry film 103 .
  • Step 3 as shown in FIG1C , a redistribution layer and bumps 104 are arranged on the front surface of the transfer board 100.
  • the redistribution layer is electrically connected to the conductive through silicon vias 101, and the redistribution layer is electrically connected to the bumps 104.
  • Step 4 as shown in FIG1D , the chip 105 is arranged on the front of the adapter board 100, and the first underfill layer 106 is arranged between the chip 105 and the adapter board 100.
  • the chip 105 is arranged on the front of the adapter board 100 by welding the pins 1051 of the chip 105 to the bumps 104.
  • Step 5 as shown in FIG. 1E , the chip 105 is plastic-encapsulated to form a plastic-encapsulation layer 107 .
  • Step 6 as shown in FIG. 1F , temporarily bond the plastic encapsulation layer 107 to the carrier film 108 via a bonding adhesive 109 .
  • Step 7 as shown in FIG. 1G , the back side of the adapter board 100 is thinned to expose the conductive silicon via 101, and a pad 110 is arranged on the conductive silicon via 101, and then a solder ball is arranged on the pad 110 111.
  • step 8 as shown in FIG1H , the carrier sheet 108 and the bonding adhesive 109 are removed, and then a single package structure is formed by cutting along the cutting path 102. After cutting, the side of the transfer board is covered with a dry film 103 to avoid damage caused by collision and improve reliability.
  • Step 9 as shown in FIG. 1I , assemble the single package structure onto the substrate 112 , connect the solder ball 111 to the substrate 112 , and then fill the second underfill layer 113 between the single package structure and the substrate 112 .
  • FIGS. 2A to 2G are schematic cross-sectional views of a process for preparing a 2.5D module structure with six-sided protection and a cap according to an embodiment of the present invention.
  • a method for preparing a 2.5D module structure with six-sided protection and a cover comprising the following steps:
  • Step 1 as shown in FIG. 2A, a conductive silicon through via 201 is formed on the front of the adapter plate 200, and a cutting path 202 is formed.
  • the adapter plate 200 has a conductive silicon through via 201.
  • a through hole is first etched on the front of the adapter plate 200, and then metal is filled to form the conductive silicon through via 201.
  • the cutting path 202 is formed on the front of the adapter plate 200 by a plasma dry etching method or a mechanical blade half-cutting method.
  • Step 2 as shown in FIG. 2B , fill the dicing street 202 with a dry film 203 .
  • Step 3 as shown in FIG2C , a redistribution layer and bumps 204 are arranged on the front surface of the transfer board 200.
  • the redistribution layer is electrically connected to the conductive through silicon vias 201, and the redistribution layer is electrically connected to the bumps 204.
  • step 4 as shown in FIG. 2D , the back side of the transfer board 200 is thinned to expose the conductive silicon via 201, and the pad 205 is arranged on the conductive silicon via 201, and then the solder ball 206 is arranged on the pad 205, and the transfer board 2001 is cut along the cutting path 202 to form a single transfer board 2001.
  • the side of the cut single transfer board 2001 is covered with a dry film 203 to avoid damage caused by collision and improve reliability.
  • Step 5 as shown in FIG. 2E , a single interposer 2001 is arranged on the substrate 207 , a solder ball 206 is connected to the substrate 207 , and then a first underfill layer 208 is filled between the single interposer 2001 and the substrate 207 .
  • Step 6 as shown in FIG2F , the chip 209 is arranged on the single transfer board 2001, and a second underfill layer 210 is filled between the single transfer board 2001 and the chip 209.
  • the chip 209 is arranged on the front side of the single transfer board 2001 by soldering the pins 2091 of the chip 209 to the bumps 204.
  • Step 7 as shown in FIG. 2G , a cover 211 is placed on the chip 209 .
  • the four sides of the chip 207 are connected to the substrate 207, and the top of the cover 211 is connected to the back side of the chip 209.
  • FIG. 3 shows a 2.5D module structure with six-side protection according to an embodiment of the present invention.
  • a six-sided protected 2.5D module structure includes an adapter plate 300 , a conductive silicon via 301 , a dry film 302 , a solder ball 303 , a pad 304 , a redistribution layer, a bump 305 , a chip 306 , a first underfill layer 307 , a plastic encapsulation layer 308 , a substrate 309 and a second underfill layer 310 .
  • the conductive through silicon via 301 passes through the transfer board 300 and is electrically connected to the pad 304 and the redistribution layer.
  • the solder pad 304 is located on the back side of the transfer board 300 , and the solder ball 303 is connected to the solder pad 304 .
  • the redistribution layer is located on the front side of the interposer 300 with the bump 305.
  • the redistribution layer is electrically connected to the bump 305.
  • the dry film 302 is located around the adapter plate 300 , and the side surfaces of the adapter plate are covered by the dry film 302 , thereby avoiding damage caused by collision and improving reliability.
  • the chip 306 is arranged on the front side of the transfer board 300 .
  • the front side of the chip 306 has pins 3061 , which are soldered to the bumps 305 , so that the chip 306 is arranged on the front side of the transfer board 300 .
  • the first underfill layer 307 is located between the chip 306 and the transfer board 300 .
  • the plastic encapsulation layer 308 encapsulates the chip 306 .
  • the substrate 309 is connected to the solder balls 303 , so that the interposer 300 is disposed on the substrate 309 .
  • the second underfill layer 310 is located between the substrate 309 and the transfer board 300 .
  • FIG. 4 shows a 2.5D module structure with six-side protection according to an embodiment of the present invention.
  • a six-sided protected 2.5D module structure includes an adapter plate 400 , a conductive silicon via 401 , a dry film 402 , a solder ball 403 , a pad 404 , a redistribution layer, a bump 405 , a substrate 406 , a first underfill layer 407 , a chip 408 , a second underfill layer 409 and a cover 410 .
  • the conductive through silicon via 401 passes through the transfer board 400 and is electrically connected to the pad 404 and the redistribution layer.
  • the solder pad 404 is located on the back side of the transfer board 400 , and the solder ball 403 is connected to the solder pad 404 .
  • the redistribution layer is located on the front side of the bump 405 of the transfer board 400.
  • the redistribution layer is electrically connected to the bump 305.
  • the dry film 402 is located around the adapter plate 400 , and the side surfaces of the adapter plate are covered by the dry film 402 , thereby avoiding damage caused by collision and improving reliability.
  • the substrate 406 is connected to the solder balls 403 , so that the interposer 400 is disposed on the substrate 406 .
  • the first underfill layer 407 is located between the substrate 406 and the transfer board 400 .
  • the chip 408 is arranged on the front side of the interposer 400 .
  • the front side of the chip 408 has pins 4081 , which are soldered to the bumps 405 , so that the chip 408 is arranged on the front side of the interposer 400 .
  • the second underfill layer 409 is located between the chip 408 and the transfer board 400 .
  • the cover 410 is disposed on the chip 408.
  • the periphery of the cover 410 is connected to the substrate 406, and the top of the cover 410 is connected to the back side of the chip 408.
  • the present invention has at least the following beneficial effects: the present invention discloses a six-sided protected 2.5D module structure and a preparation method thereof, wherein a cutting path is formed on an adapter plate and filled with a dry film, and after the cutting step, the sides of the adapter plate are covered with a dry film to form protection.
  • This method achieves all-round protection of the 2.5D module structure without almost increasing the manufacturing process and cost of the 2.5D module structure, thereby improving the reliability of the module.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

The present invention relates to a 2.5D module structure with six-side protection, comprising an adapter plate; conductive silicon through holes, which pass through the adapter plate and are electrically connected to pads and a redistribution layer; the pads, which are located on the back face of the adapter plate; solder balls, which are connected to the pads; the redistribution layer, which is located on the front face of the adapter plate and is electrically connected to bumps; the bumps, which are located on the front face of the adapter plate; dry films, which cover side faces of the adapter plate; chips, which are arranged on the front face of the adapter plate; a first underfill layer, which is located between the chips and the adapter plate; an encapsulation layer, which encapsulates the chips; a substrate, which is connected to the solder balls; and a second underfill layer, which is located between the substrate and the adapter plate. The present invention further relates to a manufacturing method for the 2.5D module structure with six-side protection. The 2.5D module structure with six-side protection achieves all-around protection for 2.5D modules while hardly increasing manufacturing procedures and costs, thereby improving the reliability of modules.

Description

一种六面保护的2.5D模组结构及其制备方法A six-sided protected 2.5D module structure and preparation method thereof 技术领域Technical Field
本发明涉及半导体封装技术领域，尤其涉及一种六面保护的2.5D模组结构及其制备方法。The present invention relates to the field of semiconductor packaging technology, and in particular to a six-sided protected 2.5D module structure and a preparation method thereof.
背景技术Background technique
2.5D模组如果采用的是chip on wafer on substrate(CoWoS)工艺流程制备的，芯片无论是通过倒装焊还是打线工艺焊接到转接板晶圆后，都会通过晶圆塑封工艺将组装上转接板晶圆上的芯片全部保护起来，提高芯片的可靠性。然后产品完成晶圆背面TSV露头、重布线和焊点的制作，再切割成单颗模块，最后贴装到基板上。切割使得转接板的四个硅基侧面暴露在外，没有任何保护，在后续的使用过程中很容易出现硅裂异常，2.5D模组的可靠性不高。If the 2.5D module is prepared using the chip on wafer on substrate (CoWoS) process, after the chip is soldered to the adapter wafer by flip-chip or wire bonding, the chip assembled on the adapter wafer will be protected by the wafer plastic sealing process to improve the reliability of the chip. Then the product completes the TSV exposure, rewiring and solder joints on the back of the wafer, and then cuts it into single modules and finally mounts it on the substrate. Cutting exposes the four silicon-based sides of the adapter without any protection. Silicon cracks are prone to occur during subsequent use, and the reliability of the 2.5D module is not high.
另一种2.5D模组的制备方法的步骤如下：将转接板切割成单颗，通过倒装焊工艺贴装到基板上，然后再通过打线或者倒装焊工艺将芯片安装到转接板正面，最后通过贴盖来保护转接板和芯片。由于工艺是将转接板先切割成单颗，在后期的组装工艺中转接板的四个硅基侧面都是暴露的，没有任何保护的，很容易因为操作的碰撞而使得转接板和芯片破损失效。因此，需要一种能够实现全方位保护的2.5D模组结构。Another method for preparing a 2.5D module has the following steps: cutting the adapter board into individual pieces, mounting them on the substrate through a flip-chip process, then mounting the chip on the front of the adapter board through wire bonding or flip-chip bonding, and finally protecting the adapter board and chip by applying a cover. Since the process is to cut the adapter board into individual pieces first, the four silicon-based sides of the adapter board are exposed in the later assembly process without any protection, and it is easy for the adapter board and chip to be damaged and fail due to collision during operation. Therefore, a 2.5D module structure that can achieve all-round protection is needed.
发明内容Summary of the invention
本发明的任务是提供一种六面保护的2.5D模组结构及其制备方法，实现了2.5D模组结构的全方位保护，提高了2.5D模组结构的可靠性。The task of the present invention is to provide a six-sided protected 2.5D module structure and a preparation method thereof, so as to realize all-round protection of the 2.5D module structure and improve the reliability of the 2.5D module structure.
针对现有技术中存在的问题，本发明提供一种六面保护的2.5D模组结构，包括：In view of the problems existing in the prior art, the present invention provides a 2.5D module structure with six-sided protection, comprising:
转接板；Adapter plate;
导电硅通孔，其贯穿所述转接板，并与焊盘以及重布线层电连接；A conductive through silicon via, which passes through the adapter plate and is electrically connected to the pad and the redistribution layer;
焊盘，其位于所述转接板的背面； A soldering pad, which is located on the back side of the adapter board;
焊球，其与所述焊盘连接；A solder ball connected to the solder pad;
重布线层，其位于所述转接板的正面，并与凸点电连接；A redistribution layer, which is located on the front side of the adapter board and is electrically connected to the bumps;
凸点，其位于所述转接板的正面；A convex point located on the front side of the adapter plate;
干膜，其覆盖所述转接板的侧面；a dry film covering the sides of the adapter plate;
芯片，其布置在所述转接板的正面；A chip, which is arranged on the front side of the adapter board;
第一底填层，其位于所述芯片与所述转接板之间；A first bottom filling layer, which is located between the chip and the adapter board;
塑封层，其塑封所述芯片；A plastic sealing layer, which plastic seals the chip;
基板，其与所述焊球连接；a substrate connected to the solder balls;
第二底填层，其位于所述基板与所述转接板之间。The second bottom filling layer is located between the substrate and the adapter plate.
本发明还提供一种六面保护的2.5D模组结构，包括：The present invention also provides a six-sided protected 2.5D module structure, comprising:
转接板；Adapter plate;
导电硅通孔，其贯穿所述转接板，并与焊盘以及重布线层电连接；A conductive through silicon via, which passes through the adapter plate and is electrically connected to the pad and the redistribution layer;
焊盘，其位于所述转接板的背面；A soldering pad, which is located on the back side of the adapter board;
焊球，其与所述焊盘连接；A solder ball connected to the solder pad;
重布线层，其位于所述转接板的正面，并与凸点电连接；A redistribution layer, which is located on the front side of the adapter board and is electrically connected to the bumps;
凸点，其位于所述转接板的正面；A convex point located on the front side of the adapter plate;
干膜，其覆盖所述转接板的侧面；a dry film covering the sides of the adapter plate;
基板，其与所述焊球连接；a substrate connected to the solder balls;
第一底填层，其位于所述基板与所述转接板之间；A first bottom filling layer, which is located between the substrate and the adapter plate;
芯片，其布置在所述转接板的正面；A chip, which is arranged on the front side of the adapter board;
第二底填层，其位于所述芯片与所述转接板之间；以及A second underfill layer, which is located between the chip and the adapter board; and
贴盖，其罩设在芯片上，其中所述贴盖的四周与所述基板连接，且所述贴盖的顶部与所述芯片的背面连接。The cover is arranged on the chip, wherein the periphery of the cover is connected to the substrate, and the top of the cover is connected to the back side of the chip.
在本发明的一个实施例中，所述芯片的正面具有管脚，所述管脚与所述凸点焊接，使得所述芯片布置在所述转接板的正面。In one embodiment of the present invention, the front side of the chip has pins, and the pins are welded to the bumps, so that the chip is arranged on the front side of the adapter board.
在本发明的一个实施例中，所述基板与所述焊球连接，使得所述转接板布置在所述基板上。In one embodiment of the present invention, the substrate is connected to the solder balls so that the adapter plate is arranged on the substrate.
本发明还提供一种六面保护的2.5D模组结构的制备方法，包括：The present invention also provides a method for preparing a six-sided protected 2.5D module structure, comprising:
在转接板的正面形成导电硅通孔，并形成切割道；Forming a conductive through silicon via on the front side of the adapter plate and forming a cutting path;
在切割道中填充干膜； Filling the cut lanes with dry film;
在转接板的正面布置重布线层和凸点；Arrange the redistribution layer and bumps on the front side of the adapter board;
在转接板的正面布置芯片，并在芯片与转接板之间布置第一底填层；Arranging a chip on the front side of the adapter board, and arranging a first underfill layer between the chip and the adapter board;
将塑封层与载片通过键合胶临时键合；Temporarily bonding the plastic sealing layer to the carrier through bonding glue;
将转接板的背面减薄露出导电硅通孔，并在导电硅通孔上布置焊盘，然后在焊盘上布置焊球；The back side of the adapter board is thinned to expose the conductive through silicon via, and a solder pad is arranged on the conductive through silicon via, and then a solder ball is arranged on the solder pad;
去除载片和键合胶，然后沿着切割道切割形成单个封装结构；以及Removing the carrier and bonding adhesive, and then cutting along the dicing lines to form a single package structure; and
将单个封装结构组装到基板上。Assemble the individual package structures onto the substrate.
本发明还提供一种六面保护的2.5D模组结构的制备方法，包括：The present invention also provides a method for preparing a six-sided protected 2.5D module structure, comprising:
在转接板的正面形成导电硅通孔，并形成切割道；Forming a conductive through silicon via on the front side of the adapter plate and forming a cutting path;
在切割道中填充干膜；Filling the cut lanes with dry film;
在转接板的正面布置重布线层和凸点；Arrange the redistribution layer and bumps on the front side of the adapter board;
将转接板的背面减薄露出导电硅通孔，并在导电硅通孔上布置焊盘，然后在焊盘上布置焊球，沿着切割道切割形成单个转接板；The back side of the transfer board is thinned to expose the conductive silicon through via, and a pad is arranged on the conductive silicon through via, and then a solder ball is arranged on the pad, and a single transfer board is formed by cutting along a cutting path;
将单个转接板布置在基板上；arranging a single adapter plate on a base plate;
将芯片布置在单个转接板上，并在单个转接板与芯片之间填充第二底填层；以及Arranging the chip on a single interposer and filling a second underfill layer between the single interposer and the chip; and
将贴盖罩设在芯片上，其中贴盖的四周与基板连接，且贴盖的顶部与芯片的背面连接。The cover is arranged on the chip, wherein the periphery of the cover is connected to the substrate, and the top of the cover is connected to the back side of the chip.
在本发明的一个实施例中，通过等离子干法刻蚀方法或者机械刀片半切方法在所述转接板的正面形成所述切割道。In one embodiment of the present invention, the cutting path is formed on the front side of the adapter plate by a plasma dry etching method or a mechanical blade half-cutting method.
在本发明的一个实施例中，所述单个封装结构中的转接板的侧面被所述干膜覆盖。In one embodiment of the present invention, the side surface of the interposer in the single package structure is covered by the dry film.
在本发明的一个实施例中，所述单个转接板的侧面被所述干膜覆盖。In one embodiment of the present invention, the side surface of the single adapter plate is covered by the dry film.
本发明至少具有下列有益效果：本发明公开的一种六面保护的2.5D模组结构及其制备方法，通过在转接板上形成切割道并填充干膜，在切割步骤之后，转接板的侧面覆盖有干膜形成了保护，该方法在几乎不增加2.5D模组结构制作流程和成本的前提下，实现了2.5D模组结构的全方位保护，提高了模组的可靠性。 The present invention has at least the following beneficial effects: the present invention discloses a six-sided protected 2.5D module structure and a preparation method thereof, wherein a cutting path is formed on an adapter plate and filled with a dry film, and after the cutting step, the sides of the adapter plate are covered with a dry film to form protection. This method achieves all-round protection of the 2.5D module structure without almost increasing the manufacturing process and cost of the 2.5D module structure, thereby improving the reliability of the module.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了进一步阐明本发明的各实施例的以上和其它优点和特征，将参考附图来呈现本发明的各实施例的更具体的描述。可以理解，这些附图只描绘本发明的典型实施例，因此将不被认为是对其范围的限制。在附图中，为了清楚明了，相同或相应的部件将用相同或类似的标记表示。In order to further illustrate the above and other advantages and features of various embodiments of the present invention, a more specific description of various embodiments of the present invention will be presented with reference to the accompanying drawings. It will be understood that these drawings only depict typical embodiments of the present invention and are therefore not to be considered as limiting the scope thereof. In the accompanying drawings, for clarity, identical or corresponding parts will be represented by identical or similar reference numerals.
图1A至1I示出了根据本发明一个实施例的制备六面保护的2.5D模组结构的过程剖面示意图；1A to 1I are schematic cross-sectional views showing a process for preparing a 2.5D module structure with six-sided protection according to an embodiment of the present invention;
图2A至2G示出了根据本发明一个实施例的制备带有贴盖的六面保护的2.5D模组结构的过程剖面示意图；2A to 2G are schematic cross-sectional views showing a process of preparing a 2.5D module structure with six-sided protection and a cover according to an embodiment of the present invention;
图3示出了根据本发明一个实施例的一种六面保护的2.5D模组结构；以及FIG3 shows a 2.5D module structure with six-sided protection according to an embodiment of the present invention; and
图4示出了根据本发明一个实施例的一种六面保护的2.5D模组结构。FIG. 4 shows a 2.5D module structure with six-side protection according to an embodiment of the present invention.
具体实施方式Detailed ways
应当指出，各附图中的各组件可能为了图解说明而被夸大地示出，而不一定是比例正确的。It should be noted that various components in the various drawings may be shown exaggeratedly for illustrative purposes and are not necessarily correct to scale.
在本发明中，各实施例仅仅旨在说明本发明的方案，而不应被理解为限制性的。In the present invention, each embodiment is only intended to illustrate the aspects of the present invention and should not be construed as limiting.
在本发明中，除非特别指出，量词“一个”、“一”并未排除多个元素的场景。In the present invention, unless otherwise specified, the quantifiers "a", "an" and "an" do not exclude the presence of a plurality of elements.
在此还应当指出，在本发明的实施例中，为清楚、简单起见，可能示出了仅仅一部分部件或组件，但是本领域的普通技术人员能够理解，在本发明的教导下，可根据具体场景需要添加所需的部件或组件。It should also be pointed out that in the embodiments of the present invention, for the sake of clarity and simplicity, only a portion of the parts or components may be shown, but a person of ordinary skill in the art will understand that under the teachings of the present invention, required parts or components may be added as needed in specific scenarios.
在此还应当指出，在本发明的范围内，“相同”、“相等”、“等于”等措辞并不意味着二者数值绝对相等，而是允许一定的合理误差，也就是说，所述措辞也涵盖了“基本上相同”、“基本上相等”、“基本上等于”。It should also be pointed out that within the scope of the present invention, the terms "same", "equal", "equal to" and the like do not mean that the two values are absolutely equal, but allow a certain reasonable error, that is, the terms also cover "substantially the same", "substantially equal", and "substantially equal to".
在此还应当指出，在本发明的描述中，术语“中心”、“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和 简化描述，而不是明示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为明示或暗示相对重要性。It should also be noted that in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present invention and the like. The description is simplified, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.
另外，本发明的实施例以特定顺序对工艺步骤进行描述，然而这只是为了方便区分各步骤，而并不是限定各步骤的先后顺序，在本发明的不同实施例中，可根据工艺的调节来调整各步骤的先后顺序。In addition, the embodiments of the present invention describe the process steps in a specific order, but this is only for the convenience of distinguishing the steps, and does not limit the sequence of the steps. In different embodiments of the present invention, the sequence of the steps can be adjusted according to the adjustment of the process.
目前2.5D模组结构中转接板侧面是裸露的硅，这就意味着，整个2.5D模组其余部分都是由树脂材料包裹住的，可以有效的抗跌落测试，只有4个侧面中转接板那一小段是裸露的硅基材料，硅是脆性材料，在没有树脂的保护下，很难满足跌落测试要求。本发明提出的一种六面保护的2.5D模组结构及其制备方法，在几乎不增加2.5D模组制备流程和成本的前提下，实现了模组的全方位保护，提高了模组的可靠性。At present, the side of the adapter board in the 2.5D module structure is exposed silicon, which means that the rest of the entire 2.5D module is wrapped by resin material, which can effectively resist drop tests. Only the small section of the adapter board on the four sides is exposed silicon-based material. Silicon is a brittle material. Without the protection of resin, it is difficult to meet the drop test requirements. The six-sided protected 2.5D module structure and its preparation method proposed by the present invention realize all-round protection of the module and improve the reliability of the module without almost increasing the preparation process and cost of the 2.5D module.
图1A至1I示出了根据本发明一个实施例的制备六面保护的2.5D模组结构的过程剖面示意图。1A to 1I are schematic cross-sectional views of a process for preparing a 2.5D module structure with six-side protection according to an embodiment of the present invention.
一种六面保护的2.5D模组结构的制备方法，包括如下步骤：A method for preparing a six-sided protected 2.5D module structure comprises the following steps:
步骤1，如图1A所示，在转接板100的正面形成导电硅通孔101，并形成切割道102。形成导电硅通孔101时，先在转接板100的正面刻蚀通孔，然后填充金属形成导电硅通孔101。通过等离子干法刻蚀方法或者机械刀片半切方法在转接板100的正面形成切割道102。Step 1, as shown in FIG. 1A, a conductive silicon through via 101 is formed on the front of the adapter board 100, and a cutting path 102 is formed. When forming the conductive silicon through via 101, a through hole is first etched on the front of the adapter board 100, and then metal is filled to form the conductive silicon through via 101. The cutting path 102 is formed on the front of the adapter board 100 by a plasma dry etching method or a mechanical blade half-cutting method.
步骤2，如图1B所示，在切割道102中填充干膜103。Step 2, as shown in FIG. 1B , fill the dicing street 102 with a dry film 103 .
步骤3，如图1C所示，在转接板100的正面布置重布线层和凸点104。重布线层与导电硅通孔101电连接，重布线层和凸点104电连接。Step 3, as shown in FIG1C , a redistribution layer and bumps 104 are arranged on the front surface of the transfer board 100. The redistribution layer is electrically connected to the conductive through silicon vias 101, and the redistribution layer is electrically connected to the bumps 104.
步骤4，如图1D所示，在转接板100的正面布置芯片105，并在芯片105与转接板100之间布置第一底填层106。通过将芯片105的管脚1051与凸点104焊接，将芯片105布置在转接板100的正面。Step 4, as shown in FIG1D , the chip 105 is arranged on the front of the adapter board 100, and the first underfill layer 106 is arranged between the chip 105 and the adapter board 100. The chip 105 is arranged on the front of the adapter board 100 by welding the pins 1051 of the chip 105 to the bumps 104.
步骤5，如图1E所示，将芯片105塑封形成塑封层107。Step 5, as shown in FIG. 1E , the chip 105 is plastic-encapsulated to form a plastic-encapsulation layer 107 .
步骤6，如图1F所示，将塑封层107与载片108通过键合胶109临时键合。Step 6, as shown in FIG. 1F , temporarily bond the plastic encapsulation layer 107 to the carrier film 108 via a bonding adhesive 109 .
步骤7，如图1G所示，将转接板100的背面减薄露出导电硅通孔101，并在导电硅通孔101上布置焊盘110，然后在焊盘110上布置焊球 111。Step 7, as shown in FIG. 1G , the back side of the adapter board 100 is thinned to expose the conductive silicon via 101, and a pad 110 is arranged on the conductive silicon via 101, and then a solder ball is arranged on the pad 110 111.
步骤8，如图1H所示，去除载片108和键合胶109，然后沿着切割道102切割形成单个封装结构。切割后转接板的侧面被干膜103覆盖，避免了因碰撞造成破损，提高了可靠性。In step 8, as shown in FIG1H , the carrier sheet 108 and the bonding adhesive 109 are removed, and then a single package structure is formed by cutting along the cutting path 102. After cutting, the side of the transfer board is covered with a dry film 103 to avoid damage caused by collision and improve reliability.
步骤9，如图1I所示，将单个封装结构组装到基板112上。将焊球111与基板112连接，然后在单个封装结构与基板112之间填充第二底填层113。Step 9, as shown in FIG. 1I , assemble the single package structure onto the substrate 112 , connect the solder ball 111 to the substrate 112 , and then fill the second underfill layer 113 between the single package structure and the substrate 112 .
图2A至2G示出了根据本发明一个实施例的制备带有贴盖的六面保护的2.5D模组结构的过程剖面示意图。2A to 2G are schematic cross-sectional views of a process for preparing a 2.5D module structure with six-sided protection and a cap according to an embodiment of the present invention.
一种带有贴盖的六面保护的2.5D模组结构的制备方法，包括如下步骤：A method for preparing a 2.5D module structure with six-sided protection and a cover, comprising the following steps:
步骤1，如图2A所示，在转接板200的正面形成导电硅通孔201，并形成切割道202。转接板200中具有导电硅通孔201。形成导电硅通孔201时，先在转接板200的正面刻蚀通孔，然后填充金属形成导电硅通孔201。通过等离子干法刻蚀方法或者机械刀片半切方法在转接板200的正面形成切割道202。Step 1, as shown in FIG. 2A, a conductive silicon through via 201 is formed on the front of the adapter plate 200, and a cutting path 202 is formed. The adapter plate 200 has a conductive silicon through via 201. When forming the conductive silicon through via 201, a through hole is first etched on the front of the adapter plate 200, and then metal is filled to form the conductive silicon through via 201. The cutting path 202 is formed on the front of the adapter plate 200 by a plasma dry etching method or a mechanical blade half-cutting method.
步骤2，如图2B所示，在切割道202中填充干膜203。Step 2, as shown in FIG. 2B , fill the dicing street 202 with a dry film 203 .
步骤3，如图2C所示，在转接板200的正面布置重布线层和凸点204。重布线层与导电硅通孔201电连接，重布线层和凸点204电连接。Step 3, as shown in FIG2C , a redistribution layer and bumps 204 are arranged on the front surface of the transfer board 200. The redistribution layer is electrically connected to the conductive through silicon vias 201, and the redistribution layer is electrically connected to the bumps 204.
步骤4，如图2D所示，将转接板200的背面减薄露出导电硅通孔201，并在导电硅通孔201上布置焊盘205，然后在焊盘205上布置焊球206，沿着切割道202切割形成单个转接板2001。切割后的单个转接板2001的侧面被干膜203覆盖，避免了因碰撞造成破损，提高了可靠性。In step 4, as shown in FIG. 2D , the back side of the transfer board 200 is thinned to expose the conductive silicon via 201, and the pad 205 is arranged on the conductive silicon via 201, and then the solder ball 206 is arranged on the pad 205, and the transfer board 2001 is cut along the cutting path 202 to form a single transfer board 2001. The side of the cut single transfer board 2001 is covered with a dry film 203 to avoid damage caused by collision and improve reliability.
步骤5，如图2E所示，将单个转接板2001布置在基板207上。将焊球206与基板207连接，然后在单个转接板2001与基板207之间填充第一底填层208。Step 5, as shown in FIG. 2E , a single interposer 2001 is arranged on the substrate 207 , a solder ball 206 is connected to the substrate 207 , and then a first underfill layer 208 is filled between the single interposer 2001 and the substrate 207 .
步骤6，如图2F所示，将芯片209布置在单个转接板2001上，并在单个转接板2001与芯片209之间填充第二底填层210。通过将芯片209的管脚2091与凸点204焊接，将芯片209布置在单个转接板2001的正面。Step 6, as shown in FIG2F , the chip 209 is arranged on the single transfer board 2001, and a second underfill layer 210 is filled between the single transfer board 2001 and the chip 209. The chip 209 is arranged on the front side of the single transfer board 2001 by soldering the pins 2091 of the chip 209 to the bumps 204.
步骤7，如图2G所示，将贴盖211罩设在芯片209上。贴盖211 的四周与基板207连接，且贴盖211的顶部与芯片209的背面连接。Step 7, as shown in FIG. 2G , a cover 211 is placed on the chip 209 . The four sides of the chip 207 are connected to the substrate 207, and the top of the cover 211 is connected to the back side of the chip 209.
图3示出了根据本发明一个实施例的一种六面保护的2.5D模组结构。FIG. 3 shows a 2.5D module structure with six-side protection according to an embodiment of the present invention.
如图3所示，一种六面保护的2.5D模组结构包括转接板300、导电硅通孔301、干膜302、焊球303、焊盘304、重布线层、凸点305、芯片306、第一底填层307、塑封层308、基板309以及第二底填层310。As shown in FIG. 3 , a six-sided protected 2.5D module structure includes an adapter plate 300 , a conductive silicon via 301 , a dry film 302 , a solder ball 303 , a pad 304 , a redistribution layer, a bump 305 , a chip 306 , a first underfill layer 307 , a plastic encapsulation layer 308 , a substrate 309 and a second underfill layer 310 .
导电硅通孔301贯穿转接板300，并与焊盘304和重布线层电连接。The conductive through silicon via 301 passes through the transfer board 300 and is electrically connected to the pad 304 and the redistribution layer.
焊盘304位于转接板300的背面，焊球303与焊盘304连接。The solder pad 304 is located on the back side of the transfer board 300 , and the solder ball 303 is connected to the solder pad 304 .
重布线层和位于凸点305转接板300的正面。重布线层与凸点305电连接。The redistribution layer is located on the front side of the interposer 300 with the bump 305. The redistribution layer is electrically connected to the bump 305.
干膜302位于转接板300的四周，转接板的侧面被干膜302覆盖，避免了因碰撞造成破损，提高了可靠性。The dry film 302 is located around the adapter plate 300 , and the side surfaces of the adapter plate are covered by the dry film 302 , thereby avoiding damage caused by collision and improving reliability.
芯片306布置在转接板300的正面。芯片306的正面具有管脚3061，其与凸点305焊接，使得芯片306布置在转接板300的正面。The chip 306 is arranged on the front side of the transfer board 300 . The front side of the chip 306 has pins 3061 , which are soldered to the bumps 305 , so that the chip 306 is arranged on the front side of the transfer board 300 .
第一底填层307位于芯片306与转接板300之间。The first underfill layer 307 is located between the chip 306 and the transfer board 300 .
塑封层308塑封芯片306。The plastic encapsulation layer 308 encapsulates the chip 306 .
基板309与焊球303连接，使得转接板300布置在基板309上。The substrate 309 is connected to the solder balls 303 , so that the interposer 300 is disposed on the substrate 309 .
第二底填层310位于基板309与转接板300之间。The second underfill layer 310 is located between the substrate 309 and the transfer board 300 .
图4示出了根据本发明一个实施例的一种六面保护的2.5D模组结构。FIG. 4 shows a 2.5D module structure with six-side protection according to an embodiment of the present invention.
如图4所示，一种六面保护的2.5D模组结构包括转接板400、导电硅通孔401、干膜402、焊球403、焊盘404、重布线层、凸点405、基板406、第一底填层407、芯片408、第二底填层409以及贴盖410。As shown in FIG. 4 , a six-sided protected 2.5D module structure includes an adapter plate 400 , a conductive silicon via 401 , a dry film 402 , a solder ball 403 , a pad 404 , a redistribution layer, a bump 405 , a substrate 406 , a first underfill layer 407 , a chip 408 , a second underfill layer 409 and a cover 410 .
导电硅通孔401贯穿转接板400，并与焊盘404和重布线层电连接。The conductive through silicon via 401 passes through the transfer board 400 and is electrically connected to the pad 404 and the redistribution layer.
焊盘404位于转接板400的背面，焊球403与焊盘404连接。The solder pad 404 is located on the back side of the transfer board 400 , and the solder ball 403 is connected to the solder pad 404 .
重布线层和位于凸点405转接板400的正面。重布线层与凸点305电连接。The redistribution layer is located on the front side of the bump 405 of the transfer board 400. The redistribution layer is electrically connected to the bump 305.
干膜402位于转接板400的四周，转接板的侧面被干膜402覆盖，避免了因碰撞造成破损，提高了可靠性。The dry film 402 is located around the adapter plate 400 , and the side surfaces of the adapter plate are covered by the dry film 402 , thereby avoiding damage caused by collision and improving reliability.
基板406与焊球403连接，使得转接板400布置在基板406上。 The substrate 406 is connected to the solder balls 403 , so that the interposer 400 is disposed on the substrate 406 .
第一底填层407位于基板406与转接板400之间。The first underfill layer 407 is located between the substrate 406 and the transfer board 400 .
芯片408布置在转接板400的正面。芯片408的正面具有管脚4081，其与凸点405焊接，使得芯片408布置在转接板400的正面。The chip 408 is arranged on the front side of the interposer 400 . The front side of the chip 408 has pins 4081 , which are soldered to the bumps 405 , so that the chip 408 is arranged on the front side of the interposer 400 .
第二底填层409位于芯片408与转接板400之间。The second underfill layer 409 is located between the chip 408 and the transfer board 400 .
贴盖410罩设在芯片408上。贴盖410的四周与基板406连接，且贴盖410的顶部与芯片408的背面连接。The cover 410 is disposed on the chip 408. The periphery of the cover 410 is connected to the substrate 406, and the top of the cover 410 is connected to the back side of the chip 408.
本发明至少具有下列有益效果：本发明公开的一种六面保护的2.5D模组结构及其制备方法，通过在转接板上形成切割道并填充干膜，在切割步骤之后，转接板的侧面覆盖有干膜形成了保护，该方法在几乎不增加2.5D模组结构制作流程和成本的前提下，实现了2.5D模组结构的全方位保护，提高了模组的可靠性。The present invention has at least the following beneficial effects: the present invention discloses a six-sided protected 2.5D module structure and a preparation method thereof, wherein a cutting path is formed on an adapter plate and filled with a dry film, and after the cutting step, the sides of the adapter plate are covered with a dry film to form protection. This method achieves all-round protection of the 2.5D module structure without almost increasing the manufacturing process and cost of the 2.5D module structure, thereby improving the reliability of the module.
虽然本发明的一些实施方式已经在本申请文件中予以了描述，但是本领域技术人员能够理解，这些实施方式仅仅是作为示例示出的。本领域技术人员在本发明的教导下可以想到众多的变型方案、替代方案和改进方案而不超出本发明的范围。所附权利要求书旨在限定本发明的范围，并借此涵盖这些权利要求本身及其等同变换的范围内的方法和结构。 Although some embodiments of the present invention have been described in this application document, it will be appreciated by those skilled in the art that these embodiments are merely shown as examples. Those skilled in the art may conceive of numerous variations, alternatives, and improvements under the teachings of the present invention without departing from the scope of the present invention. The appended claims are intended to define the scope of the present invention and to cover methods and structures within the scope of these claims themselves and their equivalents.

Claims (9)

  1. 一种六面保护的2.5D模组结构，其特征在于，包括：A 2.5D module structure with six-sided protection, characterized by comprising:
    转接板；Adapter plate;
    导电硅通孔，其贯穿所述转接板，并与焊盘以及重布线层电连接；A conductive through silicon via, which passes through the adapter plate and is electrically connected to the pad and the redistribution layer;
    焊盘，其位于所述转接板的背面；A soldering pad, which is located on the back side of the adapter board;
    焊球，其与所述焊盘连接；A solder ball connected to the solder pad;
    重布线层，其位于所述转接板的正面，并与凸点电连接；A redistribution layer, which is located on the front side of the adapter board and is electrically connected to the bumps;
    凸点，其位于所述转接板的正面；A convex point located on the front side of the adapter plate;
    干膜，其覆盖所述转接板的侧面；a dry film covering the sides of the adapter plate;
    芯片，其布置在所述转接板的正面；A chip, which is arranged on the front side of the adapter board;
    第一底填层，其位于所述芯片与所述转接板之间；A first bottom filling layer, which is located between the chip and the adapter board;
    塑封层，其塑封所述芯片；A plastic sealing layer, which plastic seals the chip;
    基板，其与所述焊球连接；a substrate connected to the solder balls;
    第二底填层，其位于所述基板与所述转接板之间。The second bottom filling layer is located between the substrate and the adapter plate.
  2. 一种六面保护的2.5D模组结构，其特征在于，包括：A 2.5D module structure with six-sided protection, characterized by comprising:
    转接板；Adapter plate;
    导电硅通孔，其贯穿所述转接板，并与焊盘以及重布线层电连接；A conductive through silicon via, which passes through the adapter plate and is electrically connected to the pad and the redistribution layer;
    焊盘，其位于所述转接板的背面；A soldering pad, which is located on the back side of the adapter board;
    焊球，其与所述焊盘连接；A solder ball connected to the solder pad;
    重布线层，其位于所述转接板的正面，并与凸点电连接；A redistribution layer, which is located on the front side of the adapter board and is electrically connected to the bumps;
    凸点，其位于所述转接板的正面；A convex point located on the front side of the adapter plate;
    干膜，其覆盖所述转接板的侧面；a dry film covering the sides of the adapter plate;
    基板，其与所述焊球连接；a substrate connected to the solder balls;
    第一底填层，其位于所述基板与所述转接板之间；A first bottom filling layer, which is located between the substrate and the adapter plate;
    芯片，其布置在所述转接板的正面；A chip, which is arranged on the front side of the adapter board;
    第二底填层，其位于所述芯片与所述转接板之间；以及A second underfill layer, which is located between the chip and the adapter board; and
    贴盖，其罩设在芯片上，其中所述贴盖的四周与所述基板连接，且所述贴盖的顶部与所述芯片的背面连接。The cover is arranged on the chip, wherein the periphery of the cover is connected to the substrate, and the top of the cover is connected to the back side of the chip.
  3. 根据权利要求1或2所述的六面保护的2.5D模组结构，其特征在于，所述芯片的正面具有管脚，所述管脚与所述凸点焊接，使得所述芯 片布置在所述转接板的正面。The six-sided protected 2.5D module structure according to claim 1 or 2, characterized in that the front side of the chip has a pin, and the pin is welded to the bump so that the chip The sheet is arranged on the front side of the adapter plate.
  4. 根据权利要求1或2所述的六面保护的2.5D模组结构，其特征在于，所述基板与所述焊球连接，使得所述转接板布置在所述基板上。The six-sided protected 2.5D module structure according to claim 1 or 2 is characterized in that the substrate is connected to the solder balls so that the adapter plate is arranged on the substrate.
  5. 一种六面保护的2.5D模组结构的制备方法，其特征在于，包括：A method for preparing a six-sided protected 2.5D module structure, characterized by comprising:
    在转接板的正面形成导电硅通孔，并形成切割道；Forming a conductive through silicon via on the front side of the adapter plate and forming a cutting path;
    在切割道中填充干膜；Filling the cut lanes with dry film;
    在转接板的正面布置重布线层和凸点；Arrange the redistribution layer and bumps on the front side of the adapter board;
    在转接板的正面布置芯片，并在芯片与转接板之间布置第一底填层；Arranging a chip on the front side of the adapter board, and arranging a first underfill layer between the chip and the adapter board;
    将塑封层与载片通过键合胶临时键合；Temporarily bonding the plastic sealing layer to the carrier through bonding glue;
    将转接板的背面减薄露出导电硅通孔，并在导电硅通孔上布置焊盘，然后在焊盘上布置焊球；The back side of the adapter board is thinned to expose the conductive through silicon via, and a pad is arranged on the conductive through silicon via, and then a solder ball is arranged on the pad;
    去除载片和键合胶，然后沿着切割道切割形成单个封装结构；以及Removing the carrier and bonding adhesive, and then cutting along the dicing lines to form a single package structure; and
    将单个封装结构组装到基板上。Assemble the individual package structures onto the substrate.
  6. 一种六面保护的2.5D模组结构的制备方法，其特征在于，包括：A method for preparing a six-sided protected 2.5D module structure, characterized by comprising:
    在转接板的正面形成导电硅通孔，并形成切割道；Forming a conductive through silicon via on the front side of the adapter plate and forming a cutting path;
    在切割道中填充干膜；Filling the cut lanes with dry film;
    在转接板的正面布置重布线层和凸点；Arrange the redistribution layer and bumps on the front side of the adapter board;
    将转接板的背面减薄露出导电硅通孔，并在导电硅通孔上布置焊盘，然后在焊盘上布置焊球，沿着切割道切割形成单个转接板；The back side of the transfer board is thinned to expose the conductive silicon through via, and a pad is arranged on the conductive silicon through via, and then a solder ball is arranged on the pad, and a single transfer board is formed by cutting along a cutting path;
    将单个转接板布置在基板上；arranging a single adapter plate on a base plate;
    将芯片布置在单个转接板上，并在单个转接板与芯片之间填充第二底填层；以及Arranging the chip on a single interposer and filling a second underfill layer between the single interposer and the chip; and
    将贴盖罩设在芯片上，其中贴盖的四周与基板连接，且贴盖的顶部与芯片的背面连接。The cover is arranged on the chip, wherein the four sides of the cover are connected to the substrate, and the top of the cover is connected to the back side of the chip.
  7. 根据权利要求5或6所述的六面保护的2.5D模组结构的制备方法，其特征在于，通过等离子干法刻蚀方法或者机械刀片半切方法在所述转接板的正面形成所述切割道。The method for preparing a six-sided protected 2.5D module structure according to claim 5 or 6 is characterized in that the cutting path is formed on the front side of the adapter plate by a plasma dry etching method or a mechanical blade half-cutting method.
  8. 根据权利要求5所述的六面保护的2.5D模组结构的制备方法，其特征在于，所述单个封装结构中的转接板的侧面被所述干膜覆盖。The method for preparing a six-sided protected 2.5D module structure according to claim 5, wherein the side surfaces of the adapter plate in the single packaging structure are covered by the dry film.
  9. 根据权利要求6所述的六面保护的2.5D模组结构的制备方法，其特征在于，所述单个转接板的侧面被所述干膜覆盖。 The method for preparing a six-sided protected 2.5D module structure according to claim 6, wherein the side surfaces of the single adapter plate are covered by the dry film.
PCT/CN2023/081843 2022-10-21 2023-03-16 2.5d module structure with six-side protection and manufacturing method therefor WO2024082532A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202211295946.6 2022-10-21
CN202211295946.6A CN115547998A (en) 2022-10-21 2022-10-21 Six-surface protection 2.5D module structure and preparation method thereof

Publications (1)

Publication Number Publication Date
WO2024082532A1 true WO2024082532A1 (en) 2024-04-25

Family

ID=84734637

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/081843 WO2024082532A1 (en) 2022-10-21 2023-03-16 2.5d module structure with six-side protection and manufacturing method therefor

Country Status (2)

Country Link
CN (1) CN115547998A (en)
WO (1) WO2024082532A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115547998A (en) * 2022-10-21 2022-12-30 华进半导体封装先导技术研发中心有限公司 Six-surface protection 2.5D module structure and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034718A (en) * 2009-09-23 2011-04-27 新科金朋有限公司 Semiconductor device and method of forming open cavity in TSV interposer to contain semiconductor die in WLCSMP
US20140312475A1 (en) * 2013-04-19 2014-10-23 Lsi Corporation Die reuse in electrical circuits
CN110676240A (en) * 2019-10-16 2020-01-10 上海先方半导体有限公司 2.5D packaging structure and manufacturing method thereof
CN112908948A (en) * 2021-01-18 2021-06-04 上海先方半导体有限公司 Packaging structure and manufacturing method thereof
CN114256194A (en) * 2021-12-21 2022-03-29 华进半导体封装先导技术研发中心有限公司 Packaging structure and preparation method thereof
CN115547998A (en) * 2022-10-21 2022-12-30 华进半导体封装先导技术研发中心有限公司 Six-surface protection 2.5D module structure and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034718A (en) * 2009-09-23 2011-04-27 新科金朋有限公司 Semiconductor device and method of forming open cavity in TSV interposer to contain semiconductor die in WLCSMP
US20140312475A1 (en) * 2013-04-19 2014-10-23 Lsi Corporation Die reuse in electrical circuits
CN110676240A (en) * 2019-10-16 2020-01-10 上海先方半导体有限公司 2.5D packaging structure and manufacturing method thereof
CN112908948A (en) * 2021-01-18 2021-06-04 上海先方半导体有限公司 Packaging structure and manufacturing method thereof
CN114256194A (en) * 2021-12-21 2022-03-29 华进半导体封装先导技术研发中心有限公司 Packaging structure and preparation method thereof
CN115547998A (en) * 2022-10-21 2022-12-30 华进半导体封装先导技术研发中心有限公司 Six-surface protection 2.5D module structure and preparation method thereof

Also Published As

Publication number Publication date
CN115547998A (en) 2022-12-30

Similar Documents

Publication Publication Date Title
US6214644B1 (en) Flip-chip micromachine package fabrication method
US6294405B1 (en) Method of forming semiconductor device having a sub-chip-scale package structure
KR100460062B1 (en) Multi chip package and manufacturing method thereof
KR20180030391A (en) Semiconductor packages having dummy connectors and methods of forming same
JP4757398B2 (en) Manufacturing method of semiconductor device
US20090258459A1 (en) Packaged System of Semiconductor Chips Having a Semiconductor Interposer
CN105762084B (en) Packaging method and packaging device of flip chip
US9548220B2 (en) Method of fabricating semiconductor package having an interposer structure
JP2001308140A (en) Semiconductor device and method of manufacturing the same
JP2003115560A (en) Semiconductor device, laminated semiconductor device, manufacturing method of semiconductor device, and manufacturing method of laminated semiconductor device
WO2002103793A1 (en) Semiconductor device and manufacturing method thereof
TW201926588A (en) Electronic package and method of manufacture
US9425177B2 (en) Method of manufacturing semiconductor device including grinding semiconductor wafer
US6900532B1 (en) Wafer level chip scale package
JP2004165311A (en) Semiconductor device and its manufacturing method
TW201503298A (en) Semiconductor package and method of manufacture
WO2024082532A1 (en) 2.5d module structure with six-side protection and manufacturing method therefor
TWI488270B (en) Semiconductor package and method of forming the same
CN114050111A (en) Fan-out type packaging method and fan-out type packaging structure
TW202203417A (en) Semiconductor device and manufacturing method thereof
US20140077387A1 (en) Semiconductor package and fabrication method thereof
JP2010010269A (en) Semiconductor device, intermediate for manufacturing semiconductor device, and method of manufacturing them
JP4649792B2 (en) Semiconductor device
US6534876B1 (en) Flip-chip micromachine package
US9147668B2 (en) Method for fabricating semiconductor structure