WO2024080532A2 - Verre résistant au plasma, composant de chambre interne pour processus de fabrication de semi-conducteur, et procédés de fabrication associés - Google Patents

Verre résistant au plasma, composant de chambre interne pour processus de fabrication de semi-conducteur, et procédés de fabrication associés Download PDF

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WO2024080532A2
WO2024080532A2 PCT/KR2023/012288 KR2023012288W WO2024080532A2 WO 2024080532 A2 WO2024080532 A2 WO 2024080532A2 KR 2023012288 W KR2023012288 W KR 2023012288W WO 2024080532 A2 WO2024080532 A2 WO 2024080532A2
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weight
plasma
less
resistant glass
melting
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PCT/KR2023/012288
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English (en)
Korean (ko)
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나혜인
이경민
석혜원
김대근
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한솔아이원스 주식회사
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Publication of WO2024080532A2 publication Critical patent/WO2024080532A2/fr

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B11/00—Pressing molten glass or performed glass reheated to equivalent low viscosity without blowing
    • C03B11/12—Cooling, heating, or insulating the plunger, the mould, or the glass-pressing machine; cooling or heating of the glass in the mould
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the present invention claims the benefit of Korean Patent Application No. 10-2022-0131088, filed with the Korea Intellectual Property Office on October 13, 2022, the entire contents of which are included in the present invention.
  • the present invention relates to plasma-resistant glass, chamber interior parts for a semiconductor manufacturing process, and their manufacturing method. Specifically, the content of the plasma-resistant glass components is controlled, the melting temperature is low by including Ge-based oxide, and the melting temperature is low. It relates to plasma-resistant glass that can prevent damage from thermal shock when used at high temperatures by reducing the coefficient of thermal expansion and improve light transmittance and durability, parts for the interior of the chamber for the semiconductor manufacturing process, and methods of manufacturing them.
  • Plasma etching processes are applied when manufacturing semiconductors and/or displays. Recently, with the application of nano-processing, the difficulty of etching has increased, and the internal parts of the process chamber exposed to the high-density plasma environment are made of oxide-based ceramics such as alumina (Al 2 O 3 ) and yttria (Y 2 O 3 ), which have corrosion resistance. It is mainly used.
  • oxide-based ceramics such as alumina (Al 2 O 3 ) and yttria (Y 2 O 3 ), which have corrosion resistance. It is mainly used.
  • oxide-based ceramic materials have a problem of low workability due to their high melting temperature.
  • the technical problem to be achieved by the present invention is to provide excellent resistance due to the plasma inside the chamber used in the semiconductor manufacturing process, and excellent heat resistance under high temperature conditions to prevent damage to components used inside the chamber and to achieve a low melting temperature.
  • One embodiment of the present invention is 20 to 50% by weight of SiO 2 , 5 to 25% by weight of Al 2 O 3 , 10 to 74% by weight of CaO, and 0.01 to 50% by weight.
  • a plasma-resistant glass formed by melting a composition containing % or less of Ge-based oxide.
  • the composition contains only SiO 2 , Al 2 O 3 , CaO, Ge-based oxides and inevitable impurities, and the content of SiO 2 is 45.00% by weight or more and 50.00% by weight or less, and the Al
  • the content of 2 O 3 may be 5.00 wt% or more and 20.00 wt% or less
  • the CaO content may be 10.00 wt% or more and 25.00 wt% or less
  • the Ge-based oxide content may be 10.00 wt% or more and 30.00 wt% or less.
  • the light transmittance may be 80% or more and 100% or less.
  • the Vickers hardness may be 650 HV or more and 1,000 HV or less.
  • the glass transition temperature may be 600°C or more and 850°C or less.
  • the thermal expansion coefficient may be 4.0
  • the etching rate by mixed plasma of fluorine and argon (Ar) may be greater than 0 nm/min and less than or equal to 20 nm/min.
  • the melting point may be 1,500°C or more and 1,750°C or less.
  • One embodiment of the present invention provides parts for the interior of a chamber for a semiconductor manufacturing process made of the plasma-resistant glass.
  • the internal components include a focus ring, an edge ring, a cover ring, a ring shower, an insulator, and an EPD window.
  • electrode view port
  • inner shutter electro static chuck
  • heater chamber liner
  • shower head CVD Boat
  • wall liner shield
  • cold pad cold pad
  • source head outer liner
  • deposition shield for (Chemical Vapor Deposition)
  • it may be any one of an upper liner, an exhaust plate, and a mask frame.
  • One embodiment of the present invention is 20 to 50% by weight of SiO 2 , 5 to 25% by weight of Al 2 O 3 , 10 to 74% by weight of CaO, and 0.01 to 50% by weight. melting a composition comprising less than or equal to % Ge-based oxide; and cooling the molten composition. It provides a method for manufacturing plasma-resistant glass including a.
  • the melting temperature in the step of melting the composition may be 1,400°C or more and 1,700°C or less.
  • One embodiment of the present invention includes melting the plasma-resistant glass; Injecting the molten plasma-resistant glass into a mold; and annealing the injected plasma-resistant glass.
  • the melting temperature in the step of melting the plasma-resistant glass may be 1,550 °C or more and 1,750 °C or less.
  • the temperature of the annealing step may be 400°C or more and 900°C or less.
  • the plasma-resistant glass according to an exemplary embodiment of the present invention improves processability by implementing a low melting temperature, and can easily manufacture parts for the interior of a chamber for a semiconductor manufacturing process.
  • the plasma-resistant glass according to an exemplary embodiment of the present invention exhibits a low thermal expansion coefficient and can prevent damage due to thermal shock in a high-temperature atmosphere.
  • the plasma-resistant glass according to an exemplary embodiment of the present invention has improved light transmittance and improved mechanical properties by improving hardness, thereby improving durability in a plasma etching environment.
  • Components used inside a chamber for a semiconductor manufacturing process can improve usage time in the semiconductor manufacturing process by implementing a low etch rate for plasma, and can improve durability by preventing damage to components due to thermal shock. You can.
  • the method for manufacturing plasma-resistant glass according to an embodiment of the present invention can easily manufacture plasma-resistant glass and prevent damage due to thermal shock in a high-temperature atmosphere.
  • the method of manufacturing components for the interior of a chamber for a semiconductor manufacturing process can manufacture components with various shapes, prevent damage due to thermal shock in a high temperature atmosphere, and easily manufacture the components.
  • FIG. 1 is a flowchart of a method for manufacturing plasma-resistant glass according to an exemplary embodiment of the present invention.
  • Figure 2 is a flowchart of a method of manufacturing components for the interior of a chamber for a semiconductor manufacturing process according to an exemplary embodiment of the present invention.
  • Figure 3 is a photograph taken of the plasma-resistant glass of Examples 1 to 3, which is an embodiment of the present invention.
  • a and/or B means “A and B, or A or B.”
  • One embodiment of the present invention is 20 to 50% by weight of SiO 2 , 5 to 25% by weight of Al 2 O 3 , 10 to 74% by weight of CaO, and 0.01 to 50% by weight.
  • a plasma-resistant glass formed by melting a composition containing % or less of Ge-based oxide.
  • the plasma-resistant glass according to an embodiment of the present invention improves processability by implementing a low melting temperature, can easily manufacture parts for the interior of the chamber for the semiconductor manufacturing process, and exhibits low thermal expansion coefficient characteristics in a high temperature atmosphere. Damage caused by thermal shock can be prevented, light transmittance is improved, and mechanical properties are improved by improving hardness, thereby improving durability in a plasma etching environment.
  • the composition includes 20% by weight or more and 50% by weight or less of SiO 2 .
  • the content of SiO 2 in the composition is 21% by weight or more and 49% by weight or less, 22% by weight or more and 48% by weight or less, 23% by weight or more and 47% by weight or less, 24% by weight or more and 46% by weight or less, and 25% by weight or more.
  • the SiO 2 and controlling the content of the SiO 2 in the above-mentioned range the basic physical properties of the plasma-resistant glass can be secured, durability and reliability can be improved, and the plasma-resistant glass can be processed. It is possible to easily reduce the production cost of parts.
  • the composition includes 5% by weight or more and 25% by weight or less of Al 2 O 3 .
  • the content of Al 2 O 3 in the composition is 6 wt% or more and 24 wt% or less, 7 wt% or more and 23 wt% or less, 8 wt% or more and 22 wt% or less, 9 wt% or more and 21 wt% or less, and 10 wt. % or more and 20 weight% or less, 11 weight% or more and 19 weight% or less, 12 weight% or more and 18 weight% or less, 13 weight% or more and 17 weight% or less, or 14 weight% or more and 16 weight% or less.
  • the composition contains 10% by weight or more and 74% by weight or less of CaO.
  • the content of CaO in the composition is 11% by weight or more and 73% by weight or less, 12% or more and 72% by weight or less, 13% or more and 71% by weight or less, 14% by weight or more and 70% by weight or less, and 15% by weight or more 69 Weight% or less, 16% or more and 68% or less by weight, 17% or more and 67% by weight or less, 18% or more and 66% by weight or less, 19% or more and 65% by weight or less, 20% or more and 64% by weight or less, 21 Weight% or more 63% by weight or less, 22% or more but 62% by weight or less, 23% or more and 61% by weight or less, 24% or more and 60% by weight or less, 25% or more and 59% by weight or less, 26% or more and 58% by weight % or less, 27% by weight or more, 57% by weight or less, 28% by weight or more
  • the thermal expansion coefficient and glass transition temperature of the glass are realized to be low, thereby minimizing thermal shock at high temperatures and inside the chamber for the semiconductor manufacturing process.
  • the durability of parts can be improved.
  • the composition includes 0.01% by weight or more and 50% by weight or less of Ge-based oxide.
  • the content of Ge-based oxide in the composition is 1% by weight to 49% by weight, 2% to 48% by weight, 3% to 47% by weight, 4% to 46% by weight, and 5% by weight.
  • the composition contains the Ge-based oxide, it has the same outermost electrons as the Si atoms, so that the glass cooled after melting has characteristics similar to Si, and the low melting point of Ge is achieved during the melting process. Although this is not easy, it is possible to achieve a low dielectric constant by including the Ge-based oxide.
  • the melting temperature of the plasma-resistant glass can be lowered to enable melting, and the dielectric constant can be realized low.
  • the fluorine (F 2 ) gas used in the etching process reacts with the Ge-based oxide to produce GeF 2 (Boiling point: 130 °C, Melting point: 120 °C). Alternatively, it generates GeF 4 (Boiling point: -15 °C, Melting point: -36.5 °C), and since these fluorine compounds have low BP and MP, they fly away during the gas etching process, so particles may not be formed.
  • the plasma-resistant glass is formed by melting the composition. As described above, by melting the composition and cooling it to form the plasma-resistant glass, the composition can be melted at a relatively low temperature and the plasma-resistant glass can be easily formed, preventing damage to thermal shock. It can be prevented.
  • the plasma-resistant glass may have a dielectric constant of 6.65 or more and 8.80 or less.
  • the plasma-resistant glass has a dielectric constant of 6.70 to 8.75, 6.75 to 8.00, 6.80 to 7.95, 6.85 to 7.90, 6.90 to 7.85, 6.95 to 7.80, 7.00 to 7.75, 7.05 to 7.70. , 7.10 or more and 7.65 or less, 7.15 or more and 7.60 or less, 7.20 or more and 7.55 or less, 7.25 or more and 7.50 or less, 7.30 or more and 7.45 or less, or 7.35 or more and 7.40 or less.
  • the plasma resistant glass has a dielectric constant of 6.79 to 6.99, 6.79 to 7.19, 6.79 to 7.39, 6.79 to 7.59, 6.99 to 7.19, 6.99 to 7.39, 6.99 to 7.59, 7.19 to 7.39.
  • Dielectric constant measurement methods include the capacitance method using an LCR meter, the reflection coefficient method using a network analyzer, and the resonant frequency method.
  • the capacitance method using an LCR meter is mainly used to measure low frequency characteristics (kHZ, MHz), and the dielectric constant can be determined from the physical size and electrostatic capacity of the capacitor.
  • the Ge-based oxide may be one selected from the group consisting of GeO, GeO 2 , Ge 2 O 3 and combinations thereof.
  • the Ge-based oxide may be GeO 2 .
  • the composition may include only SiO 2 , Al 2 O 3 , CaO, and Ge-based oxide. That is, the composition may be composed of SiO 2 , Al 2 O 3 , CaO, and Ge-based oxide. Specifically, the composition may be composed of SiO 2 , Al 2 O 3 , CaO, and Ge-based oxide and may not contain any other components. More specifically, the composition contains only SiO 2 , Al 2 O 3 , CaO, Ge-based oxides, and inevitable impurities, and is a composition composed of SiO 2 , Al 2 O 3 , CaO, and Ge-based oxides, and other than inevitable impurities. It may not contain any ingredients. As described above, since the composition contains only SiO 2 , Al 2 O 3 , CaO, and Ge-based oxides, a low melting temperature can be achieved and plasma resistance can be improved to achieve a low etch rate in the etching process using plasma.
  • the content of SiO 2 in the composition may be 45.00% by weight or more and 50.00% by weight or less.
  • the content of Al 2 O 3 in the composition may be 5.00% by weight or more and 20.00% by weight or less.
  • the content of Al 2 O 3 in the composition may be 5.00% by weight or more and 20.00% by weight or less.
  • the content of CaO in the composition may be 10.00% by weight or more and 25.00% by weight or less.
  • the thermal expansion coefficient and glass transition temperature of the glass can be lowered, thereby minimizing thermal shock at high temperatures and improving the durability of components used inside the chamber for the semiconductor manufacturing process.
  • the content of the Ge-based oxide may be 10.00% by weight or more and 30.00% by weight or less.
  • the light transmittance may be 80% or more and 100% or less.
  • the light transmittance of the plasma-resistant glass may be 82% or more and 98% or less, 85% or more and 95% or less, or 87% or more and 92% or less.
  • “light transmittance” may refer to a value measured using a haze meter (JCH-300S, Oceanoptics).
  • the Vickers hardness may be 650 HV or more and 1,000 HV or less.
  • the Vickers hardness of the plasma-resistant glass is 670 HV or more and 980 HV or less, 650 HV or more and 950 HV or less, 680 HV or more and 930 HV or less, 700 HV and 900 HV or less, 720 HV and 880 HV or less, 750 HV and 850 HV or It may be above 780 HV and below 820 HV.
  • “Vickers hardness” may refer to a value measured using a Vickers hardness meter (Helmut Fischer, FISCHERSCOPE HM-2000).
  • the glass transition temperature may be 600°C or more and 850°C or less.
  • the glass transition temperature of the plasma-resistant glass may be 620 °C or higher and 830 °C or lower, 650 °C or higher and 800 °C or lower, 670 °C or higher and 780 °C or lower, or 700 °C or higher and 750 °C or lower.
  • the thermal expansion coefficient may be 4.0 Specifically , the thermal expansion coefficient of the plasma-resistant glass is 4.1 X 10 -6 m/(m°C) or less, 4.3 X 10 -6 m/(m°C) or more 5.7 X 10 -6 m/(m°C) or less, 4.5 X 10 -6 m/(m°C) or less, 4.7 X 10 -6 m/(m°C) or more 5.3 It may be below X 10 -6 m/(m°C) or between 4.9
  • durability can be improved by preventing damage to components due to thermal shock.
  • the etching rate by mixed plasma of fluorine and argon (Ar) may be greater than 0 nm/min and less than or equal to 20 nm/min.
  • the etching rate by mixed plasma of fluorine and argon is more than 0 nm/min but less than 18 nm/min, more than 1 nm/min but less than 16 nm/min, and more than 2 nm/min and less than 15 nm/min.
  • nm/min or less 3 nm/min or more but 14 nm/min or less, 4 nm/min or more but 13 nm/min or less, 5 nm/min or more but 12 nm/min or less, 6 nm/min or more and 11 nm/min or less or 7 nm/min It may be more than 10 nm/min or less.
  • the etch step of the plasma-resistant glass may be 150 nm or more and 600 nm or less. Specifically, the etch step of the plasma-resistant glass may be 160 nm or more and 590 nm or less, 200 nm or more and 580 nm or less, 300 nm or more and 560 nm or less, or 350 nm or more and 550 nm or less.
  • the parts for the interior of the chamber for the semiconductor manufacturing process can improve the usage time in the semiconductor manufacturing process by implementing a low etch rate for plasma.
  • the melting point may be 1,500°C or more and 1,750°C or less.
  • the melting point may mean melting temperature.
  • the melting point of the plasma-resistant glass is 1,560 °C or higher and 1,740 °C or lower, 1,570 °C or higher and 1,730 °C or lower, 1,580 °C or higher and 1,720 °C or lower, 1,590 °C or higher and 1,710 °C or lower, 1,600 °C or higher and 1,700 °C or lower, or 1,610 °C or lower.
  • °C hereinafter, it may be 1,620 °C or higher and 1,680 °C or lower, 1,630 °C or higher and 1,670 °C or lower, or 1,640 °C or higher and 1,660 °C or lower.
  • the plasma-resistant glass may be amorphous. As described above, by implementing the structure of the plasma-resistant glass as amorphous, the durability of parts using the plasma-resistant glass can be improved while simultaneously reducing the etching rate by plasma.
  • One embodiment of the present invention provides parts for the interior of a chamber for a semiconductor manufacturing process made of the plasma-resistant glass.
  • Components for use inside a chamber for a semiconductor manufacturing process can improve usage time in the semiconductor manufacturing process by implementing a low etch rate for plasma, and can improve durability by preventing damage to components due to thermal shock. You can.
  • the internal components include a focus ring, an edge ring, a cover ring, a ring shower, an insulator, and an EPD window. (window), electrode, view port, inner shutter, electro static chuck, heater, chamber liner, shower head, CVD Boat, wall liner, shield, cold pad, source head, outer liner, deposition shield for (Chemical Vapor Deposition) ), it may be any one of an upper liner, an exhaust plate, and a mask frame. From the above, by using the internal components, the resistance to plasma in the semiconductor manufacturing process is improved and the usage time is extended, thereby minimizing the cost required for semiconductor manufacturing.
  • One embodiment of the present invention is 20 to 50% by weight of SiO 2 , 5 to 25% by weight of Al 2 O 3 , 10 to 74% by weight of CaO, and 0.01 to 50% by weight.
  • melting a composition comprising less than or equal to % Ge-based oxide; and cooling the molten composition. It provides a method for producing plasma-resistant glass, including a step of cooling the molten composition.
  • the method for manufacturing plasma-resistant glass according to an embodiment of the present invention can easily manufacture plasma-resistant glass and prevent damage due to thermal shock in a high-temperature atmosphere, and can produce glass with higher hardness than existing glass, thereby producing mechanical glass. By increasing the characteristics, durability in a plasma etching environment can be improved.
  • the melting step may be melting the platinum crucible.
  • the components eluted from the crucible can be minimized and the physical properties of the plasma-resistant glass can be realized.
  • a step (S13) of cooling the molten glass composition is included.
  • the step of cooling the molten glass composition as described above crystals of the plasma-resistant glass can be controlled and damage due to rapid thermal change can be prevented.
  • the temperature of the cooling step may be room temperature.
  • crystals of the plasma-resistant glass can be controlled, and melting can be easily performed in the process of manufacturing components for the interior of the chamber for the semiconductor manufacturing process.
  • the melting temperature in the step of melting the plasma-resistant glass may be 1,500 °C or more and 1,750 °C or less.
  • the melting temperature in the step of melting the composition may be a melting point of 1,500°C or more and 1,750°C or less.
  • the melting point may mean melting temperature.
  • the melting point of the plasma-resistant glass is 1,560 °C or higher and 1,740 °C or lower, 1,570 °C or higher and 1,730 °C or lower, 1,580 °C or higher and 1,720 °C or lower, 1,590 °C or higher and 1,710 °C or lower, 1,600 °C or higher and 1,700 °C or lower, or 1,610 °C or lower.
  • °C hereinafter, it may be 1,620 °C or higher and 1,680 °C or lower, 1,630 °C or higher and 1,670 °C or lower, or 1,640 °C or higher and 1,660 °C or lower.
  • One embodiment of the present invention includes melting the plasma-resistant glass; Injecting the molten plasma-resistant glass into a mold; and annealing the injected plasma-resistant glass.
  • the method of manufacturing components for the interior of a chamber for a semiconductor manufacturing process can manufacture components with various shapes, prevent damage due to thermal shock in a high temperature atmosphere, and easily manufacture the components.
  • the method of manufacturing components for the interior of the chamber for the semiconductor manufacturing process includes melting the plasma-resistant glass (S21).
  • the workability of the process of manufacturing parts for the interior of the chamber for the semiconductor manufacturing process is improved, and at the same time, the molten metal in which the plasma-resistant glass is melted is injected into the mold. By doing so, it can be molded into various shapes.
  • the method of manufacturing components for the interior of a chamber for the semiconductor manufacturing process includes the step of injecting the molten plasma-resistant glass into a mold (S23). As described above, parts of various shapes can be manufactured by injecting the molten plasma-resistant glass into a mold.
  • the mold includes a focus ring, an edge ring, a cover ring, a ring shower, an insulator, and an EPD window. ), electrode, view port, inner shutter, electro static chuck, heater, chamber liner, shower head, CVD (Chemical Vapor Deposition boat, wall liner, shield, cold pad, source head, outer liner, deposition shield, It may have one of the following shapes: an upper liner, an exhaust plate, and a mask frame. As described above, by implementing various shapes of the mold, it is possible to easily implement the shape of the part and reduce manufacturing time.
  • CVD Chemical Vapor Deposition boat, wall liner, shield, cold pad, source head, outer liner, deposition shield
  • the method of manufacturing components for the interior of the chamber for the semiconductor manufacturing process includes the step of annealing the injected plasma-resistant glass (S25).
  • the step of annealing the injected plasma-resistant glass as described above, the stress caused by heat generated in the part manufactured by injecting into the mold can be minimized to improve the durability of the part and minimize thermal shock at high temperatures. there is.
  • the melting temperature in the step of melting the plasma-resistant glass may be 1,500 °C or more and 1,750 °C or less.
  • the melting temperature in the step of melting the plasma-resistant glass may be 1,500°C or more and 1,750°C or less.
  • the melting point may mean melting temperature.
  • the melting point of the plasma-resistant glass is 1,560 °C or higher and 1,740 °C or lower, 1,570 °C or higher and 1,730 °C or lower, 1,580 °C or higher and 1,720 °C or lower, 1,590 °C or higher and 1,710 °C or lower, 1,600 °C or higher and 1,700 °C or lower, or 1,610 °C or lower.
  • °C hereinafter, it may be 1,620 °C or higher and 1,680 °C or lower, 1,630 °C or higher and 1,670 °C or lower, or 1,640 °C or higher and 1,660 °C or lower.
  • the temperature of the annealing step may be 400°C or more and 900°C or less.
  • the temperature of the annealing step is 430 °C or more and 890 °C or less, 450 °C or more and 880 °C or less, 470 °C or more and 870 °C or less, 500 °C or more and 860 °C or less, 550 °C or more and 850 °C or less, 560 °C or more and 840 °C Below, 570 °C and below 830 °C, 580 °C and below 820 °C, 590 °C and below 810 °C, 600 °C and below 800 °C, 610 °C and below 790 °C, 620 °C and below 780 °C, 630 °C and below 770 °C , 640 °C or more and 760 °C or less, 650 °C or more
  • it may include a step (S27) of processing a precursor of a component for the interior of a chamber for a semiconductor manufacturing process manufactured by the annealed plasma-resistant glass.
  • S27 a step of processing a precursor of a component for the interior of a chamber for a semiconductor manufacturing process manufactured by the annealed plasma-resistant glass.
  • sophisticated components can be manufactured by processing precursors for components used inside the chamber for the semiconductor manufacturing process.
  • a composition was prepared comprising 50% by weight SiO 2 , 15% by weight Al 2 O 3 , 20% by weight CaO and 15% by weight GeO 2 .
  • the composition was placed in a weight of 600 g and mixed for approximately 1 hour using a zirconia ball milling method. That is, 600 g of the composition: 1,800 g of zirconia balls (weight ratio 1:3) were mixed in a dry manner and then dried for 24 hours. Thereafter, the temperature of the dried composition was increased at a rate of 10 °C/min until it reached a temperature of 1,650 °C using a supercatalyst, and the composition was melted by maintaining the temperature at 1,650 °C for approximately 2 hours.
  • the molten composition was cooled to room temperature to prepare plasma-resistant glass.
  • Example 2 In the same manner as Example 1, except that the composition was prepared to include 50% by weight of SiO 2 , 10% by weight of Al 2 O 3 , 15% by weight of CaO, and 25% by weight of GeO 2 Plasma-resistant glass was manufactured.
  • Example 2 In the same manner as Example 1, except that the composition was prepared to include 50% by weight of SiO 2 , 10% by weight of Al 2 O 3 , 10% by weight of CaO, and 30% by weight of GeO 2 Plasma-resistant glass was manufactured.
  • Plasma-resistant glass was prepared in the same manner as in Example 1, except that the composition was prepared to include 50% by weight of SiO 2 , 10% by weight of Al 2 O 3 and 40% by weight of CaO. .
  • Examples 1 to 3 were placed in a platinum crucible, heated at 1,650°C and 1 atm for 4 hours, and then the appearance was measured.
  • Figure 3 is a photograph taken of the plasma-resistant glass of Examples 1 to 3, which is an embodiment of the present invention. Referring to FIG. 3, it was confirmed that Examples 1 to 3 were all melted and vitrified without any unmelted portions.
  • Examples 1 to 3 and Comparative Example 1 were set at a measurement frequency of 1 MHz, and the dielectric constants were measured using a Keysight E4990A Impedence Analyzer and are summarized in Table 1 below.
  • Example 1 Example 2 Example 3 Comparative Example 1 Dielectric constant @1MHz 8.72 8.08 7.07 10.13
  • Examples 1 to 3 including SiO 2 , Al 2 O 3 , CaO and GeO 2 were implemented with low dielectric constants.
  • Comparative Example 1 which did not contain GeO 2 , confirmed that the dielectric constant increased.
  • Examples 1 to 3 and Reference Example 1 made of quartz were partially exposed to a mixed plasma of fluorine and argon (Ar) for 1 hour, and the exposed portion and the unexposed portion were exposed to the plasma.
  • the etch step difference which is the difference between , was measured with a confocal laser microscope (Olympus OLS 5100 equipment, 400 magnification), and the etching rate was calculated by dividing the etching time from the etch step difference and summarized in Table 2 below.
  • Example 1 Example 2 Example 3 Reference example 1 Etching step (nm) 380.8 470.6 545.0 14144 Etch rate (nm/min) 6.3 7.8 9.1 235.7
  • Reference Example 1 corresponds to quartz and has high etch steps and high etch rates, but Examples 1 to 3 including GeO 2 have low etch steps and low etch rates.
  • one embodiment of the present invention satisfies the content of SiO 2 , Al 2 O 3 , CaO and Ge-based oxide in the plasma-resistant glass, thereby realizing a low etch rate and glass transition temperature, and at the same time implementing a low thermal expansion coefficient to achieve high temperature Thermal shock can be prevented, the melting temperature is low, and mechanical properties are improved by realizing light transmittance and high hardness, thereby improving durability.

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Abstract

La présente invention concerne un verre résistant au plasma, un composant de chambre interne pour un processus de fabrication de semi-conducteur et des procédés de fabrication associés et, en particulier, un verre résistant au plasma, un composant de chambre interne pour un processus de fabrication de semi-conducteur et des procédés de fabrication associés, la teneur des composants dans le verre résistant au plasma étant ajustée, un oxyde à base de Ge étant ajouté pour obtenir une basse température de fusion, un coefficient de dilatation thermique du verre résistant au plasma étant réduit pour empêcher tout endommagement dû à un choc thermique pendant l'utilisation à des températures élevées, et la transmittance de lumière et la durabilité du verre résistant au plasma pouvant être améliorées.
PCT/KR2023/012288 2022-10-13 2023-08-18 Verre résistant au plasma, composant de chambre interne pour processus de fabrication de semi-conducteur, et procédés de fabrication associés WO2024080532A2 (fr)

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KR1020220131088A KR20240051434A (ko) 2022-10-13 2022-10-13 내플라즈마성 유리, 반도체 제조 공정을 위한 챔버 내부용 부품 및 그들의 제조 방법
KR10-2022-0131088 2022-10-13

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