WO2024071012A1 - Antenne à plaque - Google Patents

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Publication number
WO2024071012A1
WO2024071012A1 PCT/JP2023/034656 JP2023034656W WO2024071012A1 WO 2024071012 A1 WO2024071012 A1 WO 2024071012A1 JP 2023034656 W JP2023034656 W JP 2023034656W WO 2024071012 A1 WO2024071012 A1 WO 2024071012A1
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WO
WIPO (PCT)
Prior art keywords
dielectric layer
patch
layer
patch antenna
conductor
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PCT/JP2023/034656
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English (en)
Japanese (ja)
Inventor
晋平 八鍬
直樹 永岡
駿二 今村
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日東電工株式会社
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Publication of WO2024071012A1 publication Critical patent/WO2024071012A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/40—Radiating elements coated with or embedded in protective material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/08—Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines

Definitions

  • the present invention relates to a patch antenna.
  • 5G mobile communication systems use electromagnetic waves in a higher frequency band (for example, electromagnetic waves in the 28 GHz band, so-called millimeter waves) than those used in previous mobile communication systems.
  • a higher frequency band for example, electromagnetic waves in the 28 GHz band, so-called millimeter waves
  • an antenna for millimeter wave communication is a patch antenna having a dielectric layer and a rectangular flat patch conductor formed on the dielectric layer (see, for example, Patent Document 1).
  • Millimeter waves have the problem of short propagation distances due to their high degree of directivity and tendency to attenuate during propagation. Even when using a patch antenna as an antenna for millimeter wave communications, high antenna gain is required.
  • the present invention aims to provide a patch antenna that improves antenna gain.
  • a patch antenna comprises a first dielectric layer having a fluororesin and a porous inorganic microparticle aggregate composed of a plurality of inorganic microparticles filled in the fluororesin, and a first patch conductor formed on the first dielectric layer, the relative dielectric constant of the first dielectric layer being 2.5 or less, and the porosity of the first dielectric layer being 30% to 70%.
  • the present invention makes it possible to improve the antenna gain of a patch antenna.
  • FIG. 1 is a perspective view of a patch antenna according to a first embodiment. 1 is a vertical cross-sectional view of a patch antenna according to a first embodiment.
  • FIG. 11 is a perspective view of a patch antenna according to a second embodiment. 11 is a vertical cross-sectional view of a patch antenna according to a second embodiment.
  • FIG. FIG. 11 is a perspective view of a patch antenna according to a third embodiment. 13 is a vertical cross-sectional view of a patch antenna according to a third embodiment.
  • FIG. FIG. 13 is a perspective view of a patch antenna according to a fourth embodiment. 13 is a vertical cross-sectional view of a patch antenna according to a fourth embodiment.
  • FIG. FIG. 13 is a perspective view of a patch antenna according to a fifth embodiment. 13 is a vertical cross-sectional view of a patch antenna according to a fifth embodiment.
  • FIG. FIG. 13 is a perspective view of a patch antenna according to a sixth embodiment. A vertical cross-sectional
  • FIG. 1 is a perspective view illustrating the patch antenna 1 according to this embodiment.
  • Figure 2 is a vertical cross-sectional view of the patch antenna 1 cut along line A-A shown in Figure 1.
  • the X direction shown in the figure corresponds to the width direction of the patch antenna 1
  • the Y direction corresponds to the depth direction of the patch antenna 1
  • the Z direction corresponds to the height direction of the patch antenna 1.
  • the X direction, Y direction, and Z direction are mutually orthogonal.
  • any direction in the XY plane may be referred to as an "in-plane direction”.
  • the direction along the Z direction may be referred to as a "perpendicular to the plane direction”.
  • Patch antenna 1 is an antenna that performs wireless communication by transmitting and receiving electromagnetic waves having a frequency band of 3 GHz to 300 GHz, known as millimeter waves or microwaves.
  • the frequency band of electromagnetic waves that can be transmitted and received by patch antenna 1 may be other than these.
  • the patch antenna 1 has a first dielectric layer 10, a first patch conductor 20, a first ground layer 30, a second ground layer 40, an inner layer 50, and a power supply section 60.
  • the first dielectric layer 10 is, for example, a dielectric layer that functions as a substrate for the patch antenna 1. More specifically, the first dielectric layer 10 has a predetermined thickness and is in the form of a sheet extending in an in-plane direction. The first dielectric layer 10 also has a first surface (front surface) 11 located on the upper side in the perpendicular direction and a second surface (back surface) 12 located on the lower side in the perpendicular direction.
  • the material of the first dielectric layer 10 is preferably a composite material containing a fluorine-based resin and a filler.
  • the fluorine-based resin include polytetrafluoroethylene (PTFE), perfluoroalkoxyalkane (PFA), tetrafluoroethylene-hexafluoropropylene copolymer (FEP), polychlorotrifluoroethylene (PCTEF), tetrafluoroethylene-ethylene copolymer (ETFE), chlorotrifluoroethylene-ethylene copolymer (ECTFE), and polyvinylidene fluoride (PVDF), which can be used alone or in combination of two or more kinds.
  • PTFE is particularly preferable.
  • the fluororesin is preferably "fibrillated (fibrous structured)". It is more preferable that the fibers in the fibrillation are oriented not only in one direction but in multiple directions. It is particularly preferable that the fibrils are linked to inorganic fine particle aggregates, which will be described later, to form a "three-dimensional fine mesh structure".
  • the fibrillation of the fluororesin can be promoted, for example, by applying a shear force, but more specifically, it is preferably performed by multi-stage rolling.
  • the three-dimensional fine mesh structure is preferably formed by multi-stage rolling in opposite directions.
  • Fillers include granular fillers and fibrous fillers.
  • Granular fillers include solid carbon such as carbon black; silicon dioxide (silica) such as porous silica, fused silica, and silica gel; transition metal oxides (including composite oxides) such as titanium oxide (titanium dioxide (titania)), iron oxide, and zirconium oxide (zirconium dioxide (zirconia)); and nitrides of typical elements such as boron nitride and silicon nitride.
  • Fibrous fillers include glass fiber and carbon fiber. These fillers can be used alone or in combination of two or more.
  • the filler preferably contains "porous inorganic microparticle aggregates (hereinafter sometimes abbreviated as "inorganic microparticle aggregates”) formed by agglomeration of inorganic microparticles having an average primary particle size of 5 to 200 nm.
  • inorganic microparticle aggregates By containing inorganic microparticle aggregates as a filler, it is possible to ensure good properties such as a dielectric constant and a thermal expansion coefficient.
  • inorganic microparticle aggregates refer to aggregates formed by the fusion of multiple inorganic microparticles, which are porous with voids between the inorganic microparticles.
  • the materials of the inorganic fine particles in the inorganic fine particle aggregate include oxides of typical elements such as silicon oxide (silicon monoxide, silicon dioxide (silica), etc.) and aluminum oxide (alumina) (including composite oxides); transition metal oxides such as titanium oxide (titanium dioxide (titania)), iron oxide, and zirconium oxide (zirconium dioxide (zirconia)) (including composite oxides); and nitrides of typical elements such as boron nitride and silicon nitride, which can be used alone or in combination of two or more. Among these, oxides of typical elements are preferred, and silicon dioxide (silica) is particularly preferred.
  • the relative dielectric constant of the composite material can be kept extremely low, and the composite material can be manufactured at a lower cost.
  • the crystallinity of the inorganic fine particles is not particularly limited, but silicon dioxide is usually amorphous.
  • the average primary particle diameter of the inorganic fine particles is 5 to 200 nm, but is preferably 10 nm or more, more preferably 15 nm or more, even more preferably 20 nm or more, and is preferably 150 nm or less, more preferably 120 nm or less, even more preferably 100 nm or less, particularly preferably 80 nm or less, and most preferably 70 nm or less. If it is within the above range, the inorganic fine particle aggregates are not easily destroyed even when processing such as mixing, molding, rolling, etc. is performed, good voids can be secured between the inorganic fine particles, and a smooth surface can be easily secured as a plate-shaped composite material.
  • the average primary particle diameter of the inorganic fine particles is a value obtained by measuring the particle diameter by direct observation with a scanning electron microscope and averaging the measured values. Specifically, it is a value obtained by randomly selecting inorganic fine particles (100 particles), measuring the particle diameter (length of the long side of the particle) of each, and averaging the measured particle diameters.
  • the porosity of the first dielectric layer 10 is preferably 30% or more, more preferably 35% or more, even more preferably 40% or more, even more preferably 45% or more, particularly preferably 50% or more, and usually 80% or less, preferably 70% or less.
  • the relative dielectric constant of the first dielectric layer 10 (frequency: 10 GHz) is usually 2.5 or less, preferably 2.3 or less, more preferably 2.2 or less, even more preferably 2.1 or less, and particularly preferably 2.0 or less, and is usually 1.55 or more.
  • the "relative dielectric constant” is the value obtained by dividing the "dielectric constant” by the "dielectric constant of a vacuum", and the "dielectric constant of a vacuum” is 1. Therefore, in this specification, "relative dielectric constant” and "dielectric constant” are treated as synonymous terms.
  • the dielectric tangent of the first dielectric layer 10 (frequency: 10 GHz) is usually 0.01 or less, preferably 0.0075 or less, more preferably 0.005 or less, even more preferably 0.004 or less, and particularly preferably 0.003 or less, and is usually 0.0005 or more.
  • the coefficient of linear thermal expansion of the first dielectric layer 10 is usually 70 ppm/K or less, preferably 60 ppm/K or less, more preferably 55 ppm/K or less, even more preferably 50 ppm/K or less, and particularly preferably 45 ppm/K or less, and is usually 10 ppm/K or more.
  • the coefficient of linear thermal expansion of the first dielectric layer 10 is the average coefficient of linear thermal expansion from -50 to 200°C measured by the TMA (Thermal Mechanical Analysis) method.
  • the first dielectric layer 10 which is 4 mm wide and 20 mm long, is fixed in the lengthwise direction, a load of 2 g is applied, and the temperature is raised from room temperature (25°C) to 200°C at a heating rate of 10°C/min and held for 30 minutes to remove residual stress in the material.
  • the layer is cooled to -50°C at 10°C/min, held for 15 minutes, and then heated to 200°C at 2°C/min.
  • the average coefficient of linear thermal expansion from -50 to 200°C during the second heating process was taken as the coefficient of linear thermal expansion.
  • the thickness of the first dielectric layer 10 is not particularly limited, but is preferably 0.05 mm to 1.0 mm. By making the thickness of the first dielectric layer 10 within this range, a high-gain antenna can be obtained.
  • an adhesive layer may be laminated on the layer of the composite material described above having a fluororesin and an inorganic microparticle aggregate composed of a plurality of inorganic microparticles (hereinafter, the layer of the composite material may be referred to as the "substrate layer").
  • examples of materials for the adhesive layer include an acrylic adhesive composition, a silicone adhesive composition, a urethane adhesive composition, and a rubber adhesive composition.
  • the thickness of the adhesive layer is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, and even more preferably 40 ⁇ m or more, and is preferably 100 ⁇ m or less, more preferably 70 ⁇ m or less, and even more preferably 50 ⁇ m or less.
  • the thickness of the adhesive layer after curing when the thickness of the substrate layer is 1 is preferably 0.01 to 0.1, and more preferably 0.05 to 0.7.
  • the first patch conductor 20 is a conductor layer that functions as an antenna element.
  • the first patch conductor 20 is formed on the first surface 11 of the first dielectric layer 10. More specifically, the first patch conductor 20 has a rectangular planar shape, and has a first surface (front surface) 21 located on the upper side in the perpendicular direction and a second surface (back surface) 22 located on the lower side in the perpendicular direction.
  • the shape of the first patch conductor 20 is not limited to this.
  • the first patch conductor 20 radiates electromagnetic waves of a predetermined frequency band from the patch antenna 1 toward an external communication device in response to the transmission of high-frequency current from the power supply unit 60.
  • the first patch conductor 20 also receives electromagnetic waves of a predetermined frequency band radiated from the external communication device toward the patch antenna 1.
  • the number of first patch conductors 20 is one as shown in Figures 1 and 2, but the number of first patch conductors 20 is not limited to this.
  • a plurality of first patch conductors 20 may be arranged in an array on the first surface 11 of the first dielectric layer 10.
  • the material of the first patch conductor 20 is not particularly limited, but examples include metals such as titanium, silicon, niobium, indium, zinc, tin, gold, silver, copper, aluminum, cobalt, chromium, nickel, lead, iron, palladium, platinum, tungsten, zirconium, tantalum, and hafnium; conductive metal oxides such as ITO (oxide of indium and tin), zinc oxide, and tin oxide.
  • the material may contain two or more of these metals or metal oxides, or may be an alloy containing these metals as the main component.
  • the first ground layer 30 is a sheet-like conductor layer that is joined to the second surface 12 of the first dielectric layer 10 and faces the first patch conductor 20 across the first dielectric layer 10.
  • the first ground layer 30 functions as a reference portion for the electric potential of the first patch conductor 20.
  • the material of the first ground layer 30 is not particularly limited as long as it is conductive, but examples include metals such as titanium, silicon, niobium, indium, zinc, tin, gold, silver, copper, aluminum, cobalt, chromium, nickel, lead, iron, palladium, platinum, tungsten, zirconium, tantalum, and hafnium; conductive metal oxides such as ITO, zinc oxide, and tin oxide; and the like.
  • the material may contain two or more of these metals or metal oxides, or may be an alloy containing these metals as the main component.
  • a through hole 31 is provided at a predetermined position of the first ground layer 30.
  • the first conductive via 61 of the power supply unit 60 is inserted into the through hole 31.
  • the second ground layer 40 is a sheet-like conductor layer provided below the first ground layer 30 in the perpendicular direction. As shown in FIG. 1, the second ground layer 40 is disposed near the power supply line 62 of the power supply unit 60. When a high-frequency current is transmitted to the power supply unit 60 toward the first patch conductor 20, electromagnetic waves may propagate in the vicinity thereof. When the electromagnetic waves propagating from the power supply unit 60 act on the first patch conductor 20, for example, the antenna performance of the patch antenna 1 may be degraded. According to this embodiment, the provision of the second ground layer 40 prevents the degradation of antenna performance due to the electromagnetic waves from the power supply unit 60. Note that the second ground layer 40 in this embodiment is disposed at the bottom of the patch antenna 1, but the position of the second ground layer 40 is not limited thereto.
  • the material of the second ground layer 40 is not particularly limited as long as it is conductive, but examples include metals such as titanium, silicon, niobium, indium, zinc, tin, gold, silver, copper, aluminum, cobalt, chromium, nickel, lead, iron, palladium, platinum, tungsten, zirconium, tantalum, and hafnium; conductive metal oxides such as ITO, zinc oxide, and tin oxide; and the like.
  • the material may contain two or more of these metals or metal oxides, or may be an alloy containing these metals as the main component.
  • the inner layer 50 is a sheet-like layer extending in an in-plane direction. As shown in Fig. 1 and Fig. 2, the inner layer 50 is sandwiched between the first ground layer 30 and the second ground layer 40.
  • the inner layer 50 has a first surface (front surface) 51 located on the upper side in the perpendicular direction and a second surface (back surface) 52 located on the lower side in the perpendicular direction.
  • a power supply line 62 of the power supply unit 60 is formed on the second surface 52 of the inner layer 50.
  • the material of the inner layer 50 is not particularly limited, but examples include polymeric materials such as polyethylene resin, polypropylene resin, polystyrene resin, etc.; and insulating materials such as ceramic materials.
  • the power supply unit 60 transmits a high-frequency current to the first patch conductor 20. More specifically, the power supply unit 60 has a first conductive via 61 penetrating the first dielectric layer 10, the first ground layer 30, and the inner layer 50, and a power supply line 62 electrically connected to the first conductive via 61 and formed on the second surface 52 of the inner layer 50. The first conductive via 61 is also electrically connected to the first patch conductor 20. In addition, the power supply line 62 is electrically connected to a power source, a signal processing unit, and the like.
  • the number of first conductive vias 61 electrically connected to the first patch conductor 20 may be two or more.
  • a plurality of power feed lines 62 are provided, each electrically connected to two or more first conductive vias 61. In this way, by providing a plurality of power feed positions for the first patch conductor 20, the transmission and reception sensitivity of a plurality of polarized waves in the patch antenna 1 can be increased.
  • the patch antenna 1 of this embodiment includes a first dielectric layer 10 that has a fluorine-based resin and an inorganic fine particle aggregate and has a porosity of 30% to 70%. This allows the dielectric constant of the first dielectric layer 10 to be reduced, improving the antenna gain of the patch antenna 1.
  • the first dielectric layer 10 also contains an inorganic fine particle aggregate as a filler. In addition to the low dielectric properties of the first dielectric layer 10, other properties such as the thermal expansion coefficient can be improved. As a result, the reliability of the patch antenna 1 can be increased.
  • Fig. 3 is a perspective view illustrating the patch antenna 1A according to the present embodiment.
  • Fig. 4 is a vertical cross-sectional view of the patch antenna 1A taken along line BB shown in Fig. 3.
  • the patch antenna 1A further has a plurality of second conductive vias 70.
  • Each of the plurality of second conductive vias 70 is disposed near the first patch conductor 20 and passes through the first dielectric layer 10.
  • Each of the second conductive vias 70 is electrically connected to the first ground layer 30.
  • the first patch conductors 20 are mounted on the first dielectric layer 10 at high density from the viewpoint of miniaturizing the antenna, etc.
  • the plurality of second conductive vias 70 are arranged between adjacent first patch conductors 20, and therefore the electromagnetic coupling between the first patch conductors 20 is weakened even if the plurality of first patch conductors 20 are mounted at high density. As a result, the deterioration of the antenna characteristics can be prevented.
  • the multiple second conductive vias 70 are arranged to surround the first patch conductor 20, but this is not limited to this. Furthermore, there is no limitation regarding the number of second conductive vias 70.
  • Fig. 5 is a perspective view illustrating the patch antenna 1B according to the present embodiment.
  • Fig. 6 is a vertical cross-sectional view of the patch antenna 1B taken along line CC shown in Fig. 5.
  • the patch antenna 1B further has a parasitic element 75 arranged on the first surface 11 of the first dielectric layer 10 so as to surround the first patch conductor 20.
  • the parasitic element 75 is also arranged at a position separated from the first patch conductor 20.
  • the distance between the first patch conductor 20 and the parasitic element 75 is not limited.
  • the parasitic element 75 only needs to be conductive, and may be made of the same material as the first patch conductor 20 or may be made of a material different from the first patch conductor 20.
  • the thickness and area of the parasitic element 75 are not limited.
  • a plurality of parasitic elements 75 may be formed on the first surface 11 of the first dielectric layer 10.
  • four parasitic elements 75 are formed on the first surface 11 of the first dielectric layer 10 so as to face the four side surfaces of the first patch conductor 20, respectively.
  • Each of the four parasitic elements 75 has a flat plate shape.
  • the parasitic elements 75 may have, for example, a series of frame shapes surrounding the periphery of the first patch conductor 20.
  • Fig. 7 is a perspective view illustrating the patch antenna 1C according to the present embodiment.
  • Fig. 8 is a vertical cross-sectional view of the patch antenna 1C taken along line DD shown in Fig. 7.
  • the patch antenna 1C has a second dielectric layer 80 formed on the first patch conductor 20.
  • the second dielectric layer 80 is a dielectric layer that covers at least the first surface 21 of the first patch conductor 20. More specifically, the second dielectric layer 80 has a predetermined thickness and is in the form of a sheet extending in the in-plane direction.
  • the second dielectric layer 80 also has a first surface (front surface) 81 located on the upper side in the perpendicular direction and a second surface (back surface) 82 located on the lower side in the perpendicular direction. As shown in Figures 7 and 8, the second dielectric layer 80 of this embodiment covers not only the first surface 21 of the first patch conductor 20 but also the area on the first surface 11 of the first dielectric layer 10 where the first patch conductor 20 is not formed.
  • the relative dielectric constant of the second dielectric layer 80 is preferably 3.5 or less, more preferably 2.5 or less, and even more preferably 2.0 or less.
  • the relative dielectric constant of the second dielectric layer 80 is preferably 1.2 or more.
  • the second dielectric layer 80 interacts with the second dielectric layer 80, which has a low dielectric constant, to increase the directivity of the radiated electromagnetic wave while suppressing the reflection loss at the air interface of the radiated electromagnetic wave from the first patch conductor 20, and makes the second dielectric layer 80 behave as if it were a lens, thereby achieving a high gain of the patch antenna 1.
  • the relative dielectric constant of the second dielectric layer 80 may be uniform in the thickness direction or in the in-plane direction.
  • the dielectric tangent of the second dielectric layer 80 (frequency: 10 GHz) is usually 0.01 or less, preferably 0.0075 or less, more preferably 0.005 or less, even more preferably 0.004 or less, and particularly preferably 0.003 or less, and is usually 0.0005 or more.
  • the second dielectric layer 80 having a low dielectric constant is a fluororesin such as polytetrafluoroethylene.
  • the material of the second dielectric layer 80 may also be a composite material containing a fluororesin and filler similar to that of the first dielectric layer 10.
  • the fluororesin and filler contained in the second dielectric layer 80 may be similar to the aforementioned fluororesin and filler usable in the first dielectric layer 10.
  • the material of the second dielectric layer 80 is not limited to this.
  • the porosity of the second dielectric layer 80 is preferably 30% or more, more preferably 35% or more, even more preferably 40% or more, even more preferably 45% or more, particularly preferably 50% or more, and usually 80% or less, preferably 70% or less.
  • the porosity is a value calculated by measuring the bulk density of the material to be the void-containing layer and the true density of the material to be the void-containing layer, and substituting them into the following formula, as in the case of the first dielectric layer 10.
  • Porosity [%] (1-(bulk density [g/cm 3 ] of material containing fluororesin and filler/true density [g/cm 3 ] of material containing fluororesin and filler)) ⁇ 100
  • the thickness of the second dielectric layer 80 is preferably 1.0 mm or more, more preferably 3.0 mm or more, and even more preferably 5.0 mm or more.
  • the thickness of the second dielectric layer 80 is preferably 10 mm or less.
  • the antenna gain of the patch antenna 1 can be improved.
  • the expansion coefficient of the second dielectric layer 80 can be reduced, and damage, peeling, etc. caused by the difference with the expansion coefficient of the first patch conductor 20 can be prevented.
  • the patch antenna 1D further includes a second patch conductor 90 formed on the first surface 81 of the second dielectric layer 80. As shown in FIG. 10, the second patch conductor 90 faces the first patch conductor 20 across the second dielectric layer 80.
  • the second patch conductor 90 is electromagnetically coupled to the first patch conductor 20 and is fed power from the first patch conductor 20.
  • the second patch conductor 90 radiates electromagnetic waves in a predetermined frequency band toward an external communication device.
  • the second patch conductor 90 receives electromagnetic waves in a predetermined frequency band radiated from the external communication device toward the patch antenna 1.
  • the number of second patch conductors 90 is one as shown in Figures 9 and 10, but the number of second patch conductors 90 is not limited to this.
  • a plurality of second patch conductors 90 may be arranged in an array on the first surface 81 of the second dielectric layer 80.
  • the material of the second patch conductor 90 is not particularly limited, but examples include metals such as titanium, silicon, niobium, indium, zinc, tin, gold, silver, copper, aluminum, cobalt, chromium, nickel, lead, iron, palladium, platinum, tungsten, zirconium, tantalum, and hafnium; conductive metal oxides such as ITO (oxide of indium and tin), zinc oxide, and tin oxide.
  • the material may contain two or more of these metals or metal oxides, or may be an alloy containing these metals as the main component.
  • the antenna performance e.g., antenna gain and frequency bandwidth
  • a patch antenna 1E according to a sixth embodiment will be described with reference to Fig. 11 and Fig. 12.
  • Fig. 11 is a perspective view illustrating the patch antenna 1E according to the present embodiment.
  • Fig. 12 is a vertical cross-sectional view of the patch antenna 1E taken along line F-F shown in Fig. 11.
  • the patch antenna 1E further has a conductive pattern 100 formed on the first surface 81 of the second dielectric layer 80.
  • An example of the conductive pattern 100 is one having a so-called metasurface structure that includes unit patterns that are periodically arranged.
  • the conductive pattern 100 of this embodiment has unit patterns 101 composed of thin metal wires having a circular planar shape.
  • the shape and size of each unit pattern 101, as well as the distance (pitch) between adjacent unit patterns 101 may be adjusted as appropriate according to the desired characteristics.
  • the conductive pattern 100 on the second dielectric layer 80 it is possible to control the transmission characteristics of the electromagnetic waves passing through the surface (e.g., the first surface 81) of the second dielectric layer 80. This makes it possible to radiate electromagnetic waves with high antenna gain in directions other than the normal (the straight line perpendicular to the first surface 81 of the second dielectric layer 80) of the patch antenna 1E according to this embodiment.
  • the first dielectric layer has a coefficient of linear thermal expansion of 50 ppm/K or less. The patch antenna according to ⁇ 1> above.
  • the first dielectric layer has a base layer and a pressure-sensitive adhesive layer formed on the base layer, The thickness ratio of the base layer to the pressure-sensitive adhesive layer is 0.01 to 0.1.
  • ⁇ 4> A ground layer facing the first patch conductor with the first dielectric layer interposed therebetween; a plurality of second conductive vias that penetrate the first dielectric layer, are electrically connected to the ground layer, and are disposed in the vicinity of the first patch conductor; Further comprising The patch antenna according to any one of ⁇ 1> to ⁇ 3>.
  • ⁇ 5> Further comprising a second dielectric layer formed on the first patch conductor, The patch antenna according to any one of ⁇ 1> to ⁇ 4>.
  • a power supply section having a first conductive via that penetrates the first dielectric layer and has one end electrically connected to the first patch conductor; a second patch conductor formed on the second dielectric layer; Further comprising: the second patch conductor is electromagnetically coupled to the first patch conductor; Power is supplied from the power supply section to the second patch conductor via the first patch conductor.
  • the semiconductor device further includes a conductive pattern having a plurality of unit patterns formed on the second dielectric layer.
  • a parasitic element is provided on the first dielectric layer so as to surround the first patch conductor.
  • the patch antenna according to any one of ⁇ 1> to ⁇ 7>.
  • Patch antenna 10 First dielectric layer 20 First patch conductor 30 First ground layer 40 Second ground layer 50 Inner layer 60 Power supply section 61 First conductive via 62 Power supply line 70 Second conductive via 75 Parasitic element 80 Second dielectric layer 90 Second patch conductor 100 Conductive pattern 101 Unit pattern of conductive pattern

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Abstract

Cette antenne à plaque comprend : une première couche diélectrique comprenant une résine à base de fluor et un agglomérat de particules fines inorganiques poreux qui est chargé dans la résine à base de fluor et est composé d'une pluralité de particules fines inorganiques ; et un premier conducteur à plaque formé sur la première couche diélectrique. La première couche diélectrique a une permittivité relative inférieure ou égale à 2,5, et la première couche diélectrique a un taux de bulles de 30 % à 70 %.
PCT/JP2023/034656 2022-09-29 2023-09-25 Antenne à plaque WO2024071012A1 (fr)

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Citations (7)

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JPS5916402A (ja) * 1982-07-19 1984-01-27 Nippon Telegr & Teleph Corp <Ntt> ２周波共用広帯域マイクロストリツプアンテナ
JP2012046755A (ja) * 2011-09-26 2012-03-08 Sumitomo Bakelite Co Ltd 絶縁性樹脂組成物、その製造方法及び電子部品
WO2021070805A1 (fr) * 2019-10-10 2021-04-15 日東電工株式会社 Matériau composite en forme de plaque
US20210151899A1 (en) * 2019-11-20 2021-05-20 Samsung Electro-Mechanics Co., Ltd. Chip antenna module array
WO2022070901A1 (fr) * 2020-09-29 2022-04-07 日東電工株式会社 Antenne à ondes millimétriques
US20220140483A1 (en) * 2020-10-29 2022-05-05 Dylan-Tek Co., Ltd. Antenna Structure
EP4044368A1 (fr) * 2019-10-31 2022-08-17 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Module d'antenne et dispositif électronique

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916402A (ja) * 1982-07-19 1984-01-27 Nippon Telegr & Teleph Corp <Ntt> ２周波共用広帯域マイクロストリツプアンテナ
JP2012046755A (ja) * 2011-09-26 2012-03-08 Sumitomo Bakelite Co Ltd 絶縁性樹脂組成物、その製造方法及び電子部品
WO2021070805A1 (fr) * 2019-10-10 2021-04-15 日東電工株式会社 Matériau composite en forme de plaque
EP4044368A1 (fr) * 2019-10-31 2022-08-17 Guangdong Oppo Mobile Telecommunications Corp., Ltd. Module d'antenne et dispositif électronique
US20210151899A1 (en) * 2019-11-20 2021-05-20 Samsung Electro-Mechanics Co., Ltd. Chip antenna module array
WO2022070901A1 (fr) * 2020-09-29 2022-04-07 日東電工株式会社 Antenne à ondes millimétriques
US20220140483A1 (en) * 2020-10-29 2022-05-05 Dylan-Tek Co., Ltd. Antenna Structure

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