WO2024066678A1 - Puce de modulateur et dispositif de modulation la comprenant - Google Patents

Puce de modulateur et dispositif de modulation la comprenant Download PDF

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Publication number
WO2024066678A1
WO2024066678A1 PCT/CN2023/107729 CN2023107729W WO2024066678A1 WO 2024066678 A1 WO2024066678 A1 WO 2024066678A1 CN 2023107729 W CN2023107729 W CN 2023107729W WO 2024066678 A1 WO2024066678 A1 WO 2024066678A1
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WIPO (PCT)
Prior art keywords
layer
electrode
waveguide
electrode group
modulator chip
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PCT/CN2023/107729
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English (en)
Chinese (zh)
Inventor
杨旻岳
沈百林
邵永波
赵慧
李蒙
张琦
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中兴光电子技术有限公司
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Publication of WO2024066678A1 publication Critical patent/WO2024066678A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure

Definitions

  • the present application relates to the technical field of optical communication devices, and in particular to a modulator chip and a modulation device thereof.
  • the modulator is a structure that converts electrical signals into optical signals. It is the core functional unit of the optical communication transmission component. Its performance indicators generally include insertion loss, efficiency and bandwidth.
  • the thin-film lithium niobate modulator uses the electro-optic effect for phase modulation. Compared with the silicon optical modulator, its bandwidth performance is stronger and it is widely used in the field of optical communications. However, due to the high dielectric constant of lithium niobate material, the electric field entering the material from the normal direction through the side wall of the waveguide is small; at the same time, the refractive index difference of the optical waveguide of lithium niobate material is not large, and the waveguide mode field is not small.
  • the electrode In order to prevent the metal electrode from causing waveguide light absorption, the electrode cannot be too close to the waveguide. These factors lead to the height of the lithium niobate waveguide of the modulator generally being selected at 600nm to maintain the working efficiency of the modulator, and the metal electrode is kept at a certain distance from the waveguide.
  • the embodiments of the present application provide a modulator chip and a modulation device thereof.
  • an embodiment of the present invention provides a modulator chip, which comprises, from top to bottom, a protective layer, an electrode layer and a waveguide layer; the electrode layer and the waveguide layer are fixed in the protective layer; the waveguide layer comprises a flat layer and a protruding layer connected to each other, and the protruding layer is fixed on the electrode layer through the flat layer; the electrode layer is provided with a first electrode group and a second electrode group that cooperate with the protruding layer; the first electrode group is correspondingly arranged above the protruding layer, and the first electrode group extends in a direction close to the protruding layer; the second electrode group is correspondingly arranged on both sides of the protruding layer.
  • an embodiment of the present application provides a modulation device, comprising the modulator chip as described above.
  • FIG1 is a cross-sectional view of a modulator chip in the related art
  • FIG2 is a cross-sectional view of a modulator chip provided in an embodiment of the present application.
  • FIG3 is a cross-sectional view of a modulator chip provided in another embodiment of the present application.
  • FIG4 is a schematic diagram of the electric field line distribution of the electrode layer in FIG2;
  • FIG5 is a structural diagram of a modulation device provided in an embodiment of the present application.
  • FIG6 is a cross-sectional view of the modulator chip in FIG5 ;
  • FIG7 is a structural diagram of a modulation device provided by another embodiment of the present application.
  • FIG8 is a cross-sectional view of the modulator chip in FIG7.
  • At least one of the following and similar expressions refer to any combination of these items, including any combination of single or plural items.
  • at least one of a, b and c can represent: a, b, c, a and b, a and c, b and c or a and b and c, where a, b, c can be single or multiple.
  • the modulator chip and modulation device involved in the embodiments of the present application work by utilizing the electro-optical effect of the change in the refractive index of the crystal material under the action of an external electric field. According to the difference between the direction of the electric field applied to the crystal and the direction of the light beam propagating in the crystal, it can be divided into longitudinal modulation and transverse modulation.
  • longitudinal electro-optical modulation When the direction of the electric field is parallel to the direction of light propagation, it is called longitudinal electro-optical modulation; when the direction of the electric field is perpendicular to the direction of light propagation, it is called transverse electro-optical modulation.
  • transverse electro-optical modulation are low half-wave voltage, low driving power, and wide application.
  • lithium niobate is an inorganic substance with the chemical formula LiNbO 3. It is a negative crystal and ferroelectric crystal.
  • the polarized lithium niobate crystal has piezoelectric, ferroelectric, optoelectronic, nonlinear optical, thermoelectric and other multi-performance materials, and also has a photorefractive effect. Therefore, the modulator chip using lithium niobate as the waveguide material has a strong bandwidth performance and is widely used in the field of optical communications.
  • the electric field entering the material from the normal direction through the waveguide side wall is small; at the same time, the refractive index difference of the optical waveguide of lithium niobate material is not large, and the waveguide mode field is not small.
  • the electrode In order to prevent the metal electrode from causing waveguide light absorption, the electrode cannot be too close to the lithium niobate waveguide.
  • the modulator chip adopts a double-layer waveguide layer 300 as shown in FIG1.
  • the structure currently has the following problems: the electrode layer 200 can only be set on both sides of the waveguide layer 300, and the distance between the electrode layer 200 and the waveguide layer 300 cannot be effectively controlled. Under the premise of ensuring that the electrode layer 200 applies an electric field strength to the waveguide layer 300, the height of the waveguide layer 200 is increased, and it is difficult to solve the problem of poor compatibility between the modulator in the chip and the high-performance coupler.
  • the embodiment of the present application provides a modulator chip and a modulation device thereof.
  • the first electrode group and the second electrode group can apply an electric field to the flat layer and the convex layer from different angles, which can increase the electric field in the waveguide layer.
  • the field strength can effectively control the distance between the electrode layer and the waveguide layer, increase the electric field strength in the waveguide layer, reduce the optical loss of the modulator chip, optimize the modulation efficiency, and effectively control the thickness of the waveguide layer, thereby improving the applicability and compatibility of the modulator chip, thereby effectively solving the problem of poor compatibility between the modulator in the chip and the high-performance coupler.
  • the modulator chip in the embodiment of the present application includes a protective layer 100, an electrode layer 200, and a waveguide layer 300 from top to bottom; the electrode layer 200 and the waveguide layer 300 are fixed in the protective layer 100; the waveguide layer 300 includes a flat layer 310 and a protrusion layer 320 connected to each other, and the protrusion layer 320 is fixed on the electrode layer 200 through the flat layer 310; the electrode layer 200 is provided with a first electrode group 210 and a second electrode group 220 that match the protrusion layer 320; the first electrode group 210 is correspondingly arranged above the protrusion layer 320, and the first electrode group 210 extends in a direction close to the protrusion layer 320; the second electrode group 220 is correspondingly arranged on both sides of the protrusion layer 320.
  • the waveguide layer 300 and the electrode layer 200 are both arranged in multiple layers, so that the first electrode group 210 and the second electrode group 220 surround the flat layer 310 and the protrusion layer 320 from different angles, and the electric field strength in the waveguide layer 300 can be increased while ensuring the distance between the waveguide layer 300 and the electrode layer 200, thereby reducing the optical loss caused by the electrode layer 200 to the waveguide layer 300, and optimizing the modulation efficiency of the modulator chip, so that when the thickness of the waveguide layer 300 is reduced, the modulation effect and working efficiency of the modulation chip with a waveguide layer 300 of 600 nm thickness can be achieved.
  • the cross-sectional area of the flat layer 310 is greater than the cross-sectional area of the protrusion layer 320 .
  • the cross-sectional area of the planar layer 310 is greater than the cross-sectional area of the raised layer 320, and the raised layer 320 and the planar layer 310 form a ridge waveguide structure.
  • the width of the raised layer 320 can be adjusted according to the requirements of the modulation device. In practical applications, the width of the raised layer 320 can be controlled between 1 ⁇ m and 3 ⁇ m to meet different application requirements.
  • the ridge waveguide structure itself can be used as a direct functional device, such as an electro-optic modulator, a nonlinear frequency converter, and a connector between functional devices, etc., and can also be used to construct other devices such as a microring resonator through spatial rotation.
  • the thickness of the planar layer 310 is 40% to 60% of the thickness of the waveguide layer 300 .
  • the thickness of the flat layer 310 is 40% to 60% of the thickness of the waveguide layer 300, which can effectively ensure the thickness of the protrusion layer 320 and the photoelectric effect generated by the waveguide layer 300.
  • the thickness ratio of the flat layer 310 and the protrusion layer 320 can be flexibly adjusted according to application requirements to improve the compatibility of the modulation chip.
  • the thickness of the waveguide layer 300 is between 300 nm and 500 nm.
  • the first electrode group 210 and the second electrode group 220 can apply electric fields to the flat layer 310 and the protruding layer 320 from different angles, the electric field strength in the waveguide layer 300 can be increased, and the distance between the electrode layer 200 and the waveguide layer 300 can be effectively controlled. Therefore, under the premise of ensuring the modulation efficiency of the modulation chip, the thickness of the waveguide layer 300 can be significantly reduced, and the modulation efficiency and bandwidth degradation control effect of the waveguide layer 300 with a thickness of 600nm in the related art can be achieved, thereby improving the compatibility of the modulation chip.
  • the waveguide layer 300 is made of thin film lithium niobate.
  • lithium niobate is an inorganic substance, a negative crystal, a ferroelectric crystal.
  • the polarized lithium niobate crystal has multiple properties such as piezoelectricity, ferroelectricity, photoelectricity, nonlinear optics, and thermoelectricity, and also has a photorefractive effect. Therefore, lithium niobate crystal is one of the most widely used new inorganic materials. It is a good piezoelectric transducer material, ferroelectric material, and electro-optical material. Lithium niobate, as an electro-optical material, plays a role in light modulation in optical communications.
  • the waveguide layer 300 is made of thin-film lithium niobate with mature process support to ensure the modulation effect of the waveguide layer 300. fruit.
  • the protection layer 100 includes a lower cladding layer 110 and a cover layer 120 ; the electrode layer 200 and the waveguide layer 300 are fixed between the lower cladding layer 110 and the cover layer 120 .
  • the lower cladding layer 110 and the cover layer 120 wrap the electrode layer 200 and the waveguide layer 300, which can effectively ensure the distance between the electrode layer 200 and the waveguide layer 300, improve the stability between the electrode layer 200 and the waveguide layer 300, and ensure the service life of the modulation chip.
  • the lower cladding layer 110 can stably support the electrode layer 200 and the waveguide layer 300 to prevent the electrode layer 200 and the waveguide layer 300 from deformation and damage.
  • the lower cladding layer 110 and the cover layer 120 are both made of silicon oxide.
  • silicon oxide has high fire resistance, high temperature resistance, small thermal expansion coefficient, high insulation, corrosion resistance, piezoelectric effect, resonance effect and its unique optical properties.
  • the cover layer 120 can effectively maintain the insulation performance between the electrode layers 200, thereby ensuring the electric field strength applied by the electrode layer 200 to the waveguide layer 300, and improving the working stability of the modulation chip.
  • Figure 3 shows a cross-sectional view of a modulator chip provided in an embodiment of the present application.
  • a third electrode group 230 is further provided below the second electrode group 220 of the embodiment of the present application; and both ends of the flat layer 310 are fixed in the third electrode group 230.
  • the electrode layer 200 is fixedly connected to the flat layer 310 through the third electrode group 230, which ensures the connection stability between the electrode layer 200 and the waveguide layer 300, improves the integrity of the modulation chip, and avoids displacement between the electrode layer 200 and the waveguide layer 300, which affects the performance of the modulation chip.
  • a fourth electrode group 240 can be provided below the flat layer 310 as required, which can effectively increase the electric field strength of the electrode layer 200 acting on the waveguide layer 300.
  • the potential difference between the electrode layers 200 is effectively reduced, the power consumption of the modulation chip is reduced, and the modulation efficiency of the modulation chip is improved.
  • the fourth electrode group 240 also ensures the connection stability between the electrode layer 200 and the protective layer 100.
  • the third electrode group 230 and the fourth electrode group 240 are configured to fix and connect the flat layer 310 and the protective layer 100, and in order to ensure the integrity of the modulation chip, the shapes are matched with the shape of the waveguide layer 300.
  • the shapes of the first electrode group 210 and the second electrode group 220 on the side close to the waveguide layer 300 can be flexibly set, including but not limited to circular, elliptical and rectangular as shown in FIG. 3 .
  • the distance between the first electrode groups 210 is greater than or equal to 3 ⁇ m, and the distance between the second electrode groups 220 is greater than or equal to 5 ⁇ m.
  • the first electrode group 210 and the second electrode group 220 are located above the flat layer 310, the first electrode group 210 can extend inwardly in the direction close to the protruding layer 320, and the distance between the second electrode groups 220 can also be smaller than the width of the flat layer 310. Therefore, the distance between the first electrode groups 210 can reach 3 ⁇ m, and the distance between the second electrode groups 220 can reach 5 ⁇ m. Since the first electrode group 210 and the second electrode group 220 surround the flat layer 310 and the protruding layer 320 from different angles, the electric field strength in the waveguide layer 300 can be increased while ensuring the distance between the waveguide layer 300 and the electrode layer 200, and the distance between the electrode layers 200 is effectively shortened.
  • the position and shape of the waveguides are first defined using electron beam lithography or optical lithography, and then ion beam milling, reactive ion etching (RIE), inductively coupled plasma etching (ICP-RIE), wet etching, or crystal ion slicing are used to complete the waveguide fabrication.
  • RIE reactive ion etching
  • ICP-RIE inductively coupled plasma etching
  • crystal ion slicing are used to complete the waveguide fabrication.
  • an additional silicon dioxide layer needs to be deposited to make the top of the silicon dioxide contact with the lithium niobate waveguide. The top of the guide is flush.
  • lithium niobate For proton exchange optical waveguides, lithium niobate needs to be immersed in a high-temperature acidic solution for proton exchange to form proton exchange lithium niobate.
  • the completed lithium niobate optical waveguide can be used as a device after simple silicon dioxide coating and electrode metal evaporation.
  • the silicon dioxide coating is grown by plasma enhanced chemical vapor deposition (PECVD), chemical vapor deposition (CVD) or physical vapor deposition (PVD).
  • PECVD plasma enhanced chemical vapor deposition
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • the modulator chips provided in this embodiment can be processed and formed by relevant production technologies. It only needs to adjust the positional relationship between the first electrode group 210, the second electrode group 220 and the covering layer 120. There is no need for large-scale transformation and upgrading of production equipment and production processes, which reduces the processing difficulty and production cost of the modulator chip.
  • MZI Mach-Zehnder interference modulators
  • MRR micro-ring resonant
  • the phase difference between the two arms changes accordingly, and the output light field changes through the coherent superposition between the two arms; while the working principle of the MRR modulator is to change the refractive index of the waveguide through different electrical structures so as to achieve the change of the spectrum.
  • MRR modulator has the advantages of high modulation rate and small size, this type of modulator needs to make a compromise between energy efficiency and optical bandwidth, and is greatly affected by process errors and environmental factors.
  • MZI has good process tolerance and stability, so the mainstream in the market is MZI electro-optical modulator.
  • this type of modulator is large in size, so reducing the size of MZI modulator, improving modulation efficiency and high-frequency performance of the device are the core of the development of this type of modulator.
  • Figures 5 and 7 show a modulation device provided by an embodiment of the present application, including the modulator chip as described above.
  • Figure 5 is an MZI modulator using the modulator chip of the embodiment of the present application
  • Figure 7 is an MRR modulator using the modulator chip of the embodiment of the present application.
  • the modulator chip of the embodiment of the present application is suitable for the thin-film lithium niobate modulation device in the x-direction, please refer to Figure 4, which shows a schematic diagram of the electric field line distribution of the electrode layer 200 provided in the embodiment of the present application.
  • the electrode layer 200 of the modulation device is located on the left and right sides of the waveguide layer 300, rather than being arranged directly above and below the waveguide layer 300.
  • the middle of the waveguide arms is a signal S electrode, and the two sides are reference ground G electrodes.
  • the light combining and splitting device of the mzi modulator uses an adiabatic coupler, and the adiabatic coupler can ensure that the loss in the C+L band is maintained at a level less than 0.2dB, and the splitting ratio is 50:50.
  • the electrode layer 200 is etched by the waveguide layer 300 and the lower cladding layer 110 is deposited and etched to form a structure as shown in FIG. 6 near the waveguide layer 300.
  • the total thickness of the waveguide layer 300 is 350 nm, of which the thickness of the planar layer 310 is 170 nm and the width of the raised layer 320 is 2 ⁇ m; then the electrode layer 200 is manufactured, with the goal of forming the fourth electrode group 240, the third electrode group 230, the second electrode group 220 and the first electrode group 210, which are deposited on both sides of the waveguide layer 300 as shown in FIG. 6, from a position below the planar layer 310 to a position above the raised layer 320.
  • the third electrode group 230, the second electrode group 220 and the first electrode group 210 are sequentially used.
  • the MZI modulator when there is a voltage difference between the electrode layers 200, the electric field lines formed between the two electrode layers 200 partially pass through the protrusion layer 320 and the flat layer 310 of the waveguide layer 300, and the refractive index of the lithium niobate material is changed through the electro-optical effect, thereby modulating the phase of one arm of the Mach-Zehnder interferometer.
  • the efficiency of the MZI modulator of the embodiment of the present application is improved by 27%.
  • the signal S and the reference ground G electrodes on both sides of the waveguide layer 300 have the same orientation.
  • the thickness of the waveguide layer 300 is 400 nm, and the slab layer The thickness of 310 is 200nm.
  • the electrode layer 200 forms a structure as shown in FIG8 near the waveguide layer 300 through etching of the waveguide layer 300 and deposition and etching of the lower cladding layer 110; and then the electrode layer 200 is manufactured, the goal is to form the third electrode group 230, the second electrode group 220 and the first electrode group 210 deposited on both sides of the waveguide layer 300 from the flat layer 310 to the position higher than the raised layer 320 as shown in FIG8.
  • the width of the raised layer 320 in the ring of the MRR modulator is 1 ⁇ m, and the width of the straight waveguide on the left side gradually changes from 2 ⁇ m to 1.4 ⁇ m in the coupling zone, forming an adiabatic coupler or a semi-adiabatic coupler to reduce the wavelength dependence of the splitting ratio of the coupler and increase the available wavelength range.
  • the electric field lines formed between the two electrode layers 200 partially pass through the protrusion layer 320 and the flat layer 310 of the waveguide layer 300, and change the refractive index of the lithium niobate material through the electro-optical effect, thereby modulating the resonant wavelength of the ring resonator.
  • the first electrode group and the second electrode group can apply an electric field to the flat layer and the protrusion layer from different angles, which can increase the electric field strength in the waveguide layer, effectively control the distance between the electrode layer and the waveguide layer, increase the electric field strength in the waveguide layer, reduce the optical loss of the modulator chip, optimize the modulation efficiency, and effectively control the thickness of the waveguide layer, thereby improving the applicability and compatibility of the modulator chip.
  • computer storage medium includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules or other data).
  • Computer storage media include, but are not limited to, RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tapes, disk storage or other magnetic storage devices, or any other medium that may be used to store desired information and may be accessed by a computer.
  • communication media generally include computer readable instructions, data structures, program modules, or other data in a modulated data signal such as a carrier wave or other transport mechanism, and may include any information delivery media.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

L'invention concerne une puce de modulateur et un dispositif de modulation le comprenant. La puce de modulateur comprend séquentiellement, de haut en bas, une couche de protection (100), une couche d'électrode (200) et une couche de guide d'ondes (300). La couche de guide d'ondes (300) comprend une couche de carte plate (310) et une couche de saillie (320), qui sont reliées l'une à l'autre, et la couche de saillie (320) est fixée à la couche d'électrode (200) au moyen de la couche de carte plate (310). La couche d'électrode (200) est pourvue d'un premier groupe d'électrodes (210) et de seconds groupes d'électrodes (220), qui correspondent à la couche de saillie (320), le premier groupe d'électrodes (210) étant disposé de manière correspondante au-dessus de la couche de saillie (320), et le premier groupe d'électrodes (210) s'étendant dans une direction s'approchant de la couche de saillie (320) ; et les seconds groupes d'électrodes (220) étant agencés de manière correspondante sur deux côtés de la couche de saillie (320).
PCT/CN2023/107729 2022-09-29 2023-07-17 Puce de modulateur et dispositif de modulation la comprenant WO2024066678A1 (fr)

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CN202211198720.4 2022-09-29
CN202211198720.4A CN117826456A (zh) 2022-09-29 2022-09-29 调制器芯片及其调制设备

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06160788A (ja) * 1992-11-25 1994-06-07 Mitsubishi Electric Corp 光変調器
JP2007212787A (ja) * 2006-02-09 2007-08-23 Ricoh Co Ltd 光制御素子、光スイッチングユニットおよび光変調器
WO2008120719A1 (fr) * 2007-03-30 2008-10-09 Sumitomo Osaka Cement Co., Ltd. Élément de commande de lumière
US9746743B1 (en) * 2015-07-31 2017-08-29 Partow Technologies, Llc. Electro-optic optical modulator devices and method of fabrication
WO2018031916A1 (fr) * 2016-08-12 2018-02-15 President And Fellows Of Harvard College Dispositifs électro-optiques en niobate de lithium à film mince micro-usinés
CN112859389A (zh) * 2021-01-14 2021-05-28 中国电子科技集团公司第五十五研究所 一种薄膜铌酸锂电光开关
US20210278708A1 (en) * 2020-03-03 2021-09-09 Psiquantum, Corp. Phase shifter employing electro-optic material sandwich
CN114019703A (zh) * 2021-11-22 2022-02-08 东南大学 一种薄膜铌酸锂双平行电光调制器集成芯片
WO2022042229A1 (fr) * 2020-08-24 2022-03-03 苏州旭创科技有限公司 Modulateur d'électrode à ondes progressives et puce photonique intégrée
CN114153085A (zh) * 2021-11-22 2022-03-08 东南大学 一种薄膜铌酸锂可调高线性电光调制器集成芯片

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06160788A (ja) * 1992-11-25 1994-06-07 Mitsubishi Electric Corp 光変調器
JP2007212787A (ja) * 2006-02-09 2007-08-23 Ricoh Co Ltd 光制御素子、光スイッチングユニットおよび光変調器
WO2008120719A1 (fr) * 2007-03-30 2008-10-09 Sumitomo Osaka Cement Co., Ltd. Élément de commande de lumière
US9746743B1 (en) * 2015-07-31 2017-08-29 Partow Technologies, Llc. Electro-optic optical modulator devices and method of fabrication
WO2018031916A1 (fr) * 2016-08-12 2018-02-15 President And Fellows Of Harvard College Dispositifs électro-optiques en niobate de lithium à film mince micro-usinés
US20210278708A1 (en) * 2020-03-03 2021-09-09 Psiquantum, Corp. Phase shifter employing electro-optic material sandwich
WO2022042229A1 (fr) * 2020-08-24 2022-03-03 苏州旭创科技有限公司 Modulateur d'électrode à ondes progressives et puce photonique intégrée
CN112859389A (zh) * 2021-01-14 2021-05-28 中国电子科技集团公司第五十五研究所 一种薄膜铌酸锂电光开关
CN114019703A (zh) * 2021-11-22 2022-02-08 东南大学 一种薄膜铌酸锂双平行电光调制器集成芯片
CN114153085A (zh) * 2021-11-22 2022-03-08 东南大学 一种薄膜铌酸锂可调高线性电光调制器集成芯片

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