WO2024066431A1 - 生长基板、显示面板及其制作方法 - Google Patents

生长基板、显示面板及其制作方法 Download PDF

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Publication number
WO2024066431A1
WO2024066431A1 PCT/CN2023/097432 CN2023097432W WO2024066431A1 WO 2024066431 A1 WO2024066431 A1 WO 2024066431A1 CN 2023097432 W CN2023097432 W CN 2023097432W WO 2024066431 A1 WO2024066431 A1 WO 2024066431A1
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Prior art keywords
substrate
growth
light
chip
refractive structure
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English (en)
French (fr)
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蒲洋
康报虹
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HKC Co Ltd
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HKC Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Definitions

  • the present application belongs to the technical field of display lighting equipment, and specifically relates to a growth substrate, a display panel and a manufacturing method thereof.
  • the LED electrodes are fixed by driving the indium or tin (In/Sn) points on the backplane to melt and then cool to complete the bonding. Then, the sapphire substrate used to grow the LED is removed by LLO (laser lift-off) to complete the transfer.
  • LLO laser lift-off
  • the present invention provides a growth substrate, a display panel and a manufacturing method thereof, which can not only prevent laser from damaging a driving backplane when the light-emitting chip is transferred to the driving backplane, thereby completing the transfer of multiple light-emitting chips to the same driving backplane, but also improve the laser utilization rate.
  • the first aspect of the present invention discloses a growth substrate, comprising: a substrate, the substrate comprising a plurality of chip growth areas spaced apart and arranged in an array and a non-growth area between the plurality of chip growth areas, the growth substrate also comprising a refractive structure arranged on the substrate, the orthographic projection of the refractive structure on the substrate covering the non-growth area and not overlapping with at least part of the chip growth area, the refractive structure being used to refract light corresponding to the non-growth area to a position corresponding to the chip growth area.
  • the second aspect of the present invention discloses a method for manufacturing a display panel, comprising: providing a driving backplane, the driving backplane
  • the board has a plurality of binding areas arranged in an array;
  • a growth substrate is provided, the growth substrate includes a substrate, a light-emitting chip and a refractive structure, the substrate includes a plurality of chip growth areas that are spaced and arranged in an array and a non-growth area located between the plurality of chip growth areas, the light-emitting chip is formed in the chip growth area correspondingly, and the orthographic projection of the refractive structure on the substrate covers the non-growth area;
  • the growth substrate is aligned and connected with the driving backplane so that the light-emitting chip on the substrate is bound to the aligned binding area;
  • a light source is provided on a side of the growth substrate away from the driving backplane; after the light-emitting chip is bound to the aligned binding area, the light emitted by the light source is
  • a third aspect of the present invention discloses a display panel, which is manufactured according to the above manufacturing method.
  • the growth substrate of the present invention adopts the laser stripping method to transfer the light-emitting chip to the driving backplane
  • the light irradiated to the non-growth area of the substrate will pass through the refractive structure and then refract, so as to change the propagation path of the light, so that at least part of the light will be refracted from the non-growth area to the chip growth area on both sides of the non-growth area.
  • the probability of light directly passing through the non-growth area to irradiate the binding area of the corresponding non-growth area of the driving backplane is reduced, and the circuit of the binding area is ensured not to be damaged, so as to facilitate the subsequent secondary or even multiple transfers of the light-emitting chip, and finally realize the preparation of RGB three-color products; it can also make the light emitted by the laser gather toward the chip growth area, thereby reducing the laser energy required when the light-emitting chip is stripped, saving costs.
  • the growth substrate of the present invention can prevent laser from damaging the driving backplane when transferring the light-emitting chip to the driving backplane by laser stripping, thereby completing the transfer of multiple light-emitting chips to the same driving backplane and improving the laser utilization rate.
  • FIG. 1 is a schematic diagram showing a partial cross-sectional structure of a growth substrate according to a first embodiment of the present invention.
  • FIG. 2 is a schematic diagram showing a cross-sectional structure of a growth substrate provided with an adjustment layer according to the first embodiment of the present invention.
  • FIG. 3 is a schematic diagram showing the path of light passing through a growth substrate in the first embodiment of the present invention.
  • FIG. 4 is a schematic diagram showing a planar structure of a substrate according to the first embodiment of the present invention.
  • FIG. 5 is a schematic diagram showing a planar structure of a growth substrate according to the first embodiment of the present invention.
  • FIG. 6 is a schematic diagram showing a planar structure of the growth substrate according to the first embodiment of the present invention from another viewing angle.
  • FIG. 7 is a flowchart showing steps S1 - S4 of manufacturing a display panel according to the second embodiment of the present invention.
  • FIG. 8 is a flowchart showing steps S21 - S25 of manufacturing a display panel according to the second embodiment of the present invention.
  • FIG. 9 is a schematic diagram showing the light path when the growth substrate is transferred to the driving backplane according to the second embodiment of the present invention.
  • an embodiment of the present invention provides a growth substrate for directly bonding the grown light-emitting chip 12 to a driving backplane (called direct bonding).
  • the light emitting chip 12 is, for example, an LED (light emitting diode), which is melted by the indium or tin (In/Sn) point on the driving backplane and then cooled to fix the electrode portion 121 of the light emitting diode, thereby completing the bonding of the light emitting diode to the driving backplane, and then the light emitting diode is peeled off (LLO) from the growth substrate by laser to complete the transfer.
  • LED light emitting diode
  • the growth substrate is used to directly align the grown LED (light emitting diode) with the driving backplane (called direct bonding). This method does not require additional transfer intermediate steps and temporary substrates, etc. The method is simple and low-cost.
  • one color of light-emitting diodes can be transferred first (such as R LED), and then the other two colors of light-emitting diodes can be transferred. That is, when the red light-emitting diode is transferred, the positions of the other two colors of light-emitting diodes on the driving backplane need to be vacated.
  • the LED pitch (the distance between two light-emitting diodes) is equal to 3 times the pixel pitch (3 times the pixel pitch of the display).
  • the growth substrate includes a substrate 11 for growing the light-emitting chip 12.
  • the substrate 11 is made of sapphire material.
  • the light emitting chip 12 is a Mini LED (sub-millimeter light emitting diode). That is, the size of the light emitting chip 12 is between 50 and 200 ⁇ m.
  • the unit is composed of a Mini LED pixel array and a driving circuit, and the pixel center spacing is 0.3-1.5 mm.
  • the light emitting chip 12 is a Micro LED (micrometer light emitting diode).
  • Micro LED display technology refers to a display technology that uses self-luminous micrometer-scale LEDs (light emitting diodes) as light-emitting pixel units and assembles them on a driving backplane to form a high-density LED array.
  • the substrate 11 includes a plurality of chip growth regions 111 that are spaced apart and arranged in an array and a non-growth region 112 between the plurality of chip growth regions 111 .
  • the chip growth area 111 and the non-growth area 112 together cover the entire surface of the substrate 11 , and the chip growth area 111 and the light-emitting chip 12 are arranged in a one-to-one correspondence.
  • the growth substrate further includes a refractive structure 13 disposed on the substrate 11.
  • the orthographic projection of the refractive structure 13 on the substrate 11 completely covers the non-growth area 112, and does not overlap with at least a portion of the chip growth area 111.
  • the refractive structure 13 is used to refract the light corresponding to the non-growth area 112 to a position corresponding to the chip growth area 111.
  • the refractive structure 13 and the light emitting chip 12 together cover the entire surface of the substrate 11.
  • the refractive structure 13 and the light emitting chip 12 may be located on the same side of the substrate 11 or on two opposite sides of the substrate 11. However, it is necessary to ensure that when light passes through the substrate 11, it will irradiate one of the refractive structure 13 and the light emitting chip 12.
  • the light irradiated to the non-growth area 112 of the substrate 11 will pass through the refractive structure 13, and then refracted, changing the propagation path of the light, so that at least part of the light will be refracted from the non-growth area 112 to the chip growth area 111.
  • the driving backplane can not only reduce the light irradiation to the driving backplane to correspond to the binding of the non-growth area 112
  • the probability of the binding area is reduced, ensuring that the circuit in the binding area is not damaged, so as to facilitate the subsequent secondary transfer; it can also make the light emitted by the laser focus on the chip growth area 111, thereby reducing the energy of the laser and saving costs.
  • the substrate 11 has a first surface 11a and a second surface 11b which are arranged opposite to each other in the thickness direction of the substrate 11 , and a portion of the first surface 11a located in the chip growth area 111 is grown with a light emitting chip 12.
  • the light emitting chip 12 covers the entire chip growth area 111.
  • the refractive structure 13 is disposed on the second surface 11 b , and its orthographic projection on the substrate 11 at least covers the entire non-growth area 112 , and the side of the refractive structure 13 away from the substrate 11 is the light incident side.
  • the refractive structure 13 may also be disposed on the first surface 11a and located between the plurality of chip growth regions 111. However, no matter the refractive structure 13 is located on the first surface 11a or the second surface 11b, its orthographic projection at least covers the non-growth region 112.
  • the refractive structure 13 when the refractive structure 13 is provided on the second surface 11b, and its orthographic projection on the substrate 11 covers the non-growth area 112, when the light emitted by the laser is emitted from the second surface 11b toward the first surface 11a, the light will first pass through the refractive structure 13 and be refracted, then pass through the second surface 11b of the substrate 11, and propagate toward the position of the chip growth area 111, until it is emitted from the position of the first surface 11a directly opposite to the chip growth area 111, and irradiates the light-emitting chip 12.
  • the probability of the light emitted by the laser directly irradiating the position of the non-growth area 112 directly opposite to the driving backplane reduced, but the light emitted by the laser is also gathered toward the chip growth area 111, so as to facilitate the stripping of the light-emitting chip 12 and improve the utilization rate of the light.
  • the probability that the light emitted by the laser directly irradiates the non-growth area 112 facing the driving backplane can also be reduced.
  • the orthographic projection of the refractive structure 13 on the substrate 11 also covers the edge of the chip growth area 111 .
  • the orthographic projection of the refractive structure 13 on the first surface 11a overlaps with the peripheral edge of the orthographic projection of the light emitting chip 12 in the chip growth area 111 on the first surface 11a, ensuring that light will not leak from the corresponding gap between the refractive structure 13 and the chip growth area 111.
  • the growth substrate further includes an adjustment layer 14 .
  • the orthographic projection of the adjustment layer 14 on the substrate 11 at least covers the non-growth area 112 , and the adjustment layer 14 is located on the light incident side of the refractive structure 13 .
  • the orthographic projection of the adjustment layer 14 on the substrate 11 covers the entire chip growth area 111 and the non-growth area 112.
  • the adjustment layer 14 is also a transparent encapsulation layer, which is specifically formed of a transparent material such as epoxy resin, polyimide, acrylic, etc., and is used to encapsulate the refractive structure 13 on the second surface 11 b of the substrate 11 .
  • the refractive structure 13 is formed of a transparent material such as SiNx.
  • the refractive index of the adjustment layer 14 is n1
  • the refractive index of the refractive structure 13 is n2
  • the refractive index of the refractive structure 13 formed of transparent materials such as SiNx is generally greater than 1.9, while the refractive index of air is generally about 1.0 under standard conditions. At this time, if the light enters the refractive structure 13 directly through the air, its refractive angle cannot satisfy that most of the light will propagate to the vicinity of the chip growth area 111, and then irradiate between the light-emitting chip 12 and the first surface 11a.
  • the adjustment layer 14 is set on the light-incident side of the refractive structure 13, and the refractive index of the adjustment layer 14 is greater than the refractive index of the refractive structure 13, which can satisfy that most of the light will propagate to the vicinity of the chip growth area 111, and then irradiate between the light-emitting chip 12 and the first surface 11a.
  • the vertical distance between the two adjacent chip growth regions 111 is d
  • the maximum height of the refractive structure is h
  • the incident angle of the refractive structure 13 is ⁇ 1 (i.e., the angle between the incident light and the normal A of the incident surface is ⁇ 1)
  • the refractive angle of the refractive structure 13 is ⁇ 2 (the angle between the refracted light and the normal A is ⁇ 2)
  • the refractive structure 13 has a bottom structural surface 132 and two side structural surfaces 131, the bottom structural surface 132 is parallel to or in contact with the substrate 11, the bottom structural surface 132 has a first boundary and a second boundary relative to each other, the boundaries of the two side structural surfaces 131 away from the bottom structural surface 132 are connected to each other, the boundary of one side structural surface 131 close to the bottom structural surface 132 is connected to the first boundary, and the boundary of the other side structural surface 131 close to the bottom structural surface 132 is connected to the second boundary, and the angles between the two side structural surfaces 131 and the bottom structural surface 132 are both acute angles.
  • the two side structural surfaces 131 are light incident surfaces of the refractive structure 13 .
  • the refractive structure 13 includes a triangular prism.
  • the refractive structure 13 may be formed by a plurality of triangular prisms, and the bottom structural surface 132 and the two side structural surfaces 131 are three side surfaces of the triangular prism.
  • the triangular prism also includes two bottom surfaces 133, both of which are perpendicular to the substrate 11, and the two bottom surfaces 133 of the triangular prism are in the shape of isosceles triangles.
  • each triangular prism are isosceles triangles, and the bottom structure surface 132 of each triangular prism is connected to the substrate 11.
  • the triangular prisms are closely arranged without any gaps. It is also necessary to ensure that each light incident surface of the refractive structure 13 is an inclined surface relative to the second surface 11b.
  • the refractive structure 13 is formed in one piece.
  • the two bottom surfaces 133 of the triangular prism forming the refractive structure 13 are both isosceles right triangles.
  • the two bottom surfaces 133 of the triangular prism forming the refractive structure 13 may also be other common isosceles triangles.
  • the two bottom surfaces 133 of the triangular prism forming the refractive structure 13 are parallel to each other, and the normal lines of the bottom structure surface 132 and the two side structure surfaces 131 are on the same plane.
  • the total amount of light received by the two side structural surfaces 131 of the refractive structure 13 of the triangular prism is almost uniform.
  • the directions of the light after passing through the two side structural surfaces 131 are opposite, so that the light corresponding to the light entering the middle area of the non-growth area 112 can be propagated toward the chip growth areas 111 on both sides of the non-growth area 112, avoiding mutual interference of the light after passing through the two side structural surfaces 131; at the same time, the laser energy received by the light-emitting chips 12 in the two adjacent chip growth areas 111 is almost the same, which is convenient for controlling the size of the laser energy.
  • the refractive structure 13 may also be a cone, a pyramid, a quadrangular prism, a pentagonal prism or other structures capable of realizing light refraction.
  • the refractive structure 13 is formed by a plurality of triangular prisms.
  • the growth substrate further includes a light shielding layer 15, and the junction of the two side structural surfaces 131 is shielded by the light shielding layer 15.
  • the junction of the two side structural surfaces 131 includes the position where the vertex 13a of the refractive structure 13 is located.
  • the shading layer 15 is disposed on the adjustment layer 14 and is also located on the light incident side of the adjustment layer 14; of course, in other embodiments, the shading layer 15 can be directly disposed on the refractive structure 13 and be located on the light incident side of the refractive structure 13 to satisfy that the shading layer 15 is provided on the light incident side at the vertex 13a of the refractive structure 13.
  • a black light shielding layer 15 may be coated at the corresponding position to directly prevent the light from entering the interior of the triangular prism forming the refractive structure 13 from the vertex.
  • the vertex 13a of the triangular prism here should be the highest vertex 13a of the triangular prism relative to the second surface 11b.
  • the edge connecting the highest vertices 13a of the triangular prisms may also be a black light shielding layer. 15 covers, preventing light from entering its interior from here and directly passing through the substrate 11.
  • the orthographic projection of the adjustment layer 14 on the substrate 11 also covers the chip growth area 111 ; the surface of the adjustment layer 14 away from the refractive structure 13 is a plane parallel to the substrate 11 .
  • the surface of the adjustment layer 14 away from the refractive structure 13 is a horizontal surface, and the laser is almost vertically injected from directly above the adjustment layer 14. Therefore, when the light passes through the adjustment layer 14, the angle does not change or the change can be ignored.
  • the refractive index of the substrate 11 is n3
  • the refractive index of the refractive structure 13 is n2, and n3 ⁇ n2.
  • the refractive index n3 of the sapphire substrate 11 is generally 1.8. In order to ensure that when the light enters the sapphire from the refractive structure 13, the refracted light does not escape from the LED chip after passing through the sapphire, n2>n3 is required.
  • the light emitting chip 12 includes a P-type semiconductor layer or an N-type semiconductor layer in contact with the first surface 11a.
  • the P-type semiconductor layer or the N-type semiconductor layer is formed of GaN (gallium nitride). Therefore, when the light emitted by the laser irradiates the gallium nitride layer of the light emitting chip 12 from one side of the second surface 11b toward the first surface 11a, the light emitting chip 12 will be separated from the first surface 11a, thereby realizing the peeling of the light emitting chip 12 from the substrate 11.
  • the light emitting chip 12 is a micron light emitting diode chip (Micro LED chip).
  • Each light emitting chip 12 includes an undoped semiconductor layer (U GaN), and an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer stacked in sequence on the undoped semiconductor layer.
  • the N-type semiconductor layer is an impurity semiconductor layer in which the free electron concentration is much greater than the hole concentration
  • the P-type semiconductor layer is also called a hole-type semiconductor layer, which is a semiconductor layer that mainly conducts electricity with positively charged holes.
  • the N-type semiconductor layer is formed, for example, of N-type doped gallium nitride (N GaN);
  • the P-type semiconductor layer is formed, for example, of P-type doped gallium nitride (P GaN).
  • the second aspect of the present invention discloses a method for manufacturing a display panel, which uses the growth substrate in the first embodiment to transfer the light emitting chip 12 to the driving backplane 20 of the display panel.
  • the method for manufacturing the display panel includes:
  • S1 providing a driving backplane 20 , wherein the driving backplane 20 has a plurality of binding areas 21 arranged in an array.
  • the growth substrate includes a substrate 11, a light-emitting chip 12 and a refractive structure 13.
  • the substrate 11 includes a plurality of chip growth regions 111 spaced apart and arranged in an array and a non-growth region 112 located between the plurality of chip growth regions 111.
  • the light-emitting chip 12 is formed in the chip growth region 111.
  • the refractive structure 13 is formed on the substrate 11 in a positive projection manner. The shadow covers the non-growth area 112.
  • providing a growth substrate includes:
  • the substrate 11 is made of sapphire material, and its refractive index is n3, which is generally 1.8.
  • the substrate 11 includes a plurality of chip growth regions 111 that are spaced apart and arranged in an array and a non-growth region 112 between the plurality of chip growth regions 111 .
  • a plurality of light emitting chips 12 are fabricated on the first surface 11a of the substrate 11, and each light emitting chip 12 is located in a chip growth area 111 in a one-to-one correspondence.
  • the size of the chip growth area 111 is set according to the size of the light emitting chip 12, ensuring that the chip growth area 111 is completely covered by the light emitting chip 12.
  • the light emitting chip 12 is a micron light emitting diode chip (Micro LED chip).
  • Each light emitting chip 12 includes an undoped semiconductor layer (U GaN), and an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer stacked in sequence on the undoped semiconductor layer.
  • the light emitting chip 12 is in contact with the first surface 11a through a P-type semiconductor layer or an N-type semiconductor layer.
  • the N-type semiconductor layer is, for example, formed of N-type doped gallium nitride (N GaN);
  • the P-type semiconductor layer is, for example, formed of P-type doped gallium nitride (P GaN).
  • the light emitting chip 12 further includes an electrode portion 121 , which is disposed on a side of the light emitting chip 12 away from the first surface 11 a and is used to be bound to the driving backplane 20 of the display panel.
  • the light emitting chip 12 is, for example, a micron light emitting diode chip emitting red, green or blue light.
  • the refractive structure 13 is formed of a transparent material such as SiNx.
  • the refractive structure 13 has a bottom structural surface 132 and two side structural surfaces 131, the bottom structural surface 132 is parallel to or in contact with the substrate, the bottom structural surface 132 has a first boundary and a second boundary relative to each other, the boundaries of the two side structural surfaces 131 away from the bottom structural surface 132 are connected to each other to form one of the edges of the triangular prism, the boundary of one side structural surface 131 close to the bottom structural surface 132 is connected to the first boundary, the boundary of the other side structural surface 131 close to the bottom structural surface 132 is connected to the second boundary, and the angles between the two side structural surfaces 131 and the bottom structural surface 132 are both acute angles.
  • the refractive structure 13 is a triangular prism
  • the bottom structural surface 132 and the two side structural surfaces 131 are three side surfaces of the triangular prism
  • the two bottom surfaces 133 of the triangular prism are perpendicular to the substrate 11
  • the shape of the two bottom surfaces 133 of the triangular prism is an isosceles triangle.
  • each triangular prism are isosceles triangles, and the bottom structure surface 132 of each triangular prism is connected to the substrate 11.
  • the triangular prisms are closely arranged without any gaps. It is also necessary to ensure that each light incident surface of the refractive structure 13 is an inclined surface relative to the second surface 11b.
  • the refractive structure 13 is formed in one piece.
  • the two bottom surfaces 133 of the triangular prism forming the refractive structure 13 are both isosceles right triangles.
  • the two bottom surfaces 133 of the triangular prism forming the refractive structure 13 may also be other common isosceles triangles.
  • the two bottom surfaces 133 of the triangular prism forming the refractive structure 13 are parallel to each other, and the normal lines of the bottom structure surface 132 and the two side structure surfaces 131 are on the same plane.
  • the adjustment layer 14 covers the entire second surface 11 b .
  • the adjustment layer 14 is formed of a transparent material such as epoxy resin, polyimide, acrylic, etc.
  • the refractive index of the adjustment layer 14 is n1; the refractive index of the refractive structure 13 is n2, ensuring that n1>n2.
  • a strip of black light-shielding material is applied on the adjustment layer 14 at the junction of the two side structural surfaces 131 of the triangular prism, thereby forming a light-shielding layer 15 to shield the junction of the two side structural surfaces 131.
  • the junction of the two side structural surfaces 131 includes the position where the vertex 13a of the refractive structure 13 is located, thereby preventing the vertex 13a of the triangular prism from failing to refract the light, and finally forming a growth substrate.
  • S3 Aligning and connecting the growth substrate and the driving backplane 20 so that the light emitting chip 12 on the substrate 11 is bound to the aligned binding area 21 thereof.
  • the light emitting chip 12 is melted by the indium or tin (In/Sn) point on the driving backplane 20 and then cooled to fix the electrode portion 121 to the binding area 21 on the driving backplane 20, and finally the light emitting chip 12 is bound to the driving backplane 20.
  • In/Sn indium or tin
  • a plurality of binding areas 21 are arranged at intervals, and one light emitting chip 12 is correspondingly arranged in one binding area 21.
  • the number of light emitting chips 12 on a single growth substrate is less than the number of binding areas 21 on a single driving backplane 20.
  • the number of binding areas 21 on a single driving backplane 20 is three times the number of light-emitting chips 12 on a single growth substrate. If, when manufacturing a display panel composed of four colors R (red), G (green), B (blue) and W (white), the number of binding areas 21 on a single driving backplane 20 is four times the number of light-emitting chips 12 on a single growth substrate. The relationship between the number of binding areas 21 on a single driving backplane 20 and the number of light-emitting chips 12 on a single growth substrate is similar.
  • three light-emitting chip 12 transfers are required. After the first light-emitting chip 12 transfer (such as transferring R LED), two binding areas 21 of unbound light-emitting chips 12 should be retained between the two light-emitting chips 12 to facilitate the subsequent two light-emitting chip 12 transfers (such as transferring G LED and B LED); after the second light-emitting chip 12 transfer (such as transferring G LED), one binding area 21 of unbound light-emitting chip 12 should be retained between the two light-emitting chips 12 to facilitate the final light-emitting chip 12 transfer (such as transferring B LED); when the light-emitting chip 12 is transferred for the final time, the light-emitting chip (such as transferring B LED) can be directly transferred to the remaining binding area 21.
  • the first light-emitting chip 12 transfer such as transferring R LED
  • two binding areas 21 of unbound light-emitting chips 12 should be retained between the two light-emitting chips 12 to facilitate the subsequent two light-emitting chip 12 transfers (such as
  • LLO laser lift-off
  • the light-emitting chip 12 when the light emitted by the laser irradiates the gallium nitride of the light-emitting chip 12 from one side of the second surface 11b toward the first surface 11a, the light-emitting chip 12 will be separated from the first surface 11a, thereby achieving the peeling of the light-emitting chip 12 and the substrate 11.
  • LLO laser lift-off
  • a display panel of an RGB three-color product it is necessary to first perform a color transfer (such as the R color light emitting chip 12) according to steps S1-S4, and then repeat steps S1-S4 twice to perform the G/B color light emitting chip 12, and then the display panel of the RGB three-color product can be prepared.
  • the position of the binding area 21 on the driving backplane 20 for binding the G ⁇ B color light-emitting chip 12 needs to be vacated.
  • the orthographic projection of the refractive structure 13 of the growth substrate on the driving backplane 20 at least covers the position of the binding area 21 corresponding to the G ⁇ B color light-emitting chip 12; when transferring the G color light-emitting chip 12, the position of the binding area 21 on the driving backplane 20 for binding the R ⁇ B color light-emitting chip 12 needs to be vacated.
  • the orthographic projection of the refractive structure 13 of the growth substrate on the driving backplane 20 at least covers the position of the binding area 21 corresponding to the R ⁇ B color light-emitting chip 12; and so on.
  • the position of the binding area 21 on the driving backplane 20 for binding the light-emitting chip 12 of R ⁇ G color needs to be vacated.
  • the orthographic projection of the refractive structure 13 of the growth substrate on the driving backplane 20 at least covers the position of the binding area 21 corresponding to the light-emitting chip 12 of R ⁇ G color.
  • the display panel in this embodiment forms a refractive structure 13 of a triangular prism with an isosceles triangle cross section and a refractive index of n2 in the non-growth area 112 (i.e., the gap area between the light emitting chips 12) of the second surface 11b of the substrate 11.
  • a transparent material such as epoxy resin, polyimide, acrylic, etc. is used to form an adjustment layer 14 with a horizontal surface to encapsulate the refractive structure 13.
  • the refractive index of the adjustment layer 14 is n1, ensuring that n1>n2.
  • the incident angle is ⁇ 1 (equal to the angle between the side structure surface 131 of the triangular prism and the second surface 11b of the substrate 11, that is, the angle between the incident light and the normal line A of the incident surface is ⁇ 1)
  • the light between adjacent light-emitting chips 12 will gather toward the light-emitting chip 12 and irradiate the GaN of the light-emitting chip 12, but will not be emitted from the non-growth area 112, thereby avoiding the laser irradiation to the driving backplane 20 and improving the laser utilization rate.
  • the shape and material refractive index of the refractive structure 13 need to satisfy the following relationship: 2Cos( ⁇ 2- ⁇ 1) ⁇ h>d.
  • the vertex 13a of the triangular prism forming the refractive structure 13 cannot refract light, and a strip of black light-shielding material can be coated at the corresponding position.
  • the refractive index n3 of the substrate 11 made of sapphire material is generally 1.8.
  • n2>n3 is required.
  • the orthographic projection of the triangular prism forming the refractive structure 13 on the substrate 11 cannot completely cover the orthographic projection of the light-emitting chip 12 on the substrate 11, so as not to affect the peeling of the light-emitting chip 12.
  • a third aspect of the present invention discloses a display panel, which is manufactured according to the manufacturing method in the second embodiment.
  • display panels can be used in mobile phones, computers, car displays, electronic billboards, etc.
  • first and second are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as “first” or “second” may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of “plurality” is two or more, unless otherwise clearly and specifically defined.
  • connection should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements.
  • connection should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements.

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Abstract

本发明涉及一种生长基板、显示面板及其制作方法。生长基板和显示面板包括基板(11)，所述基板(11)包括多个间隔且呈阵列排布的芯片生长区(111)以及位于多个所述芯片生长区之间的非生长区(112)，所述生长基板还包括设置在所述基板(11)上的折射结构(13)，所述折射结构(13)在所述基板(11)上的正投影覆盖所述非生长区(112)，并与所述芯片生长区(111)的至少部分区域不存在交叠，所述折射结构(13)用于将与所述非生长区(112)对应的光线折射到与所述芯片生长区(111)对应的位置。

Description

生长基板、显示面板及其制作方法
本申请要求于2022年9月29日提交中国专利局，申请号为CN 202211197854.4，申请名称为“生长基板、显示面板及其制作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请属于显示照明设备技术领域，具体涉及一种生长基板、显示面板及其制作方法。
背景技术
现阶段，有一种转移流程较为简便的转移方法，即直接将生长制备好LED(发光二极管)的wafer(生长基板)与驱动背板对组(称作direct bonding)。
具体地：通过驱动背板上的铟或锡(In/Sn)点熔融再冷却，来固定LED电极，完成bonding(绑定)，之后再通过LLO(激光剥离)去除用于生长LED的蓝宝石基板，从而完成转移。这种方法无需额外的转移中间步骤和暂态基板等，方法简单且成本低。
但是，因为LLO是在LED绑定在驱动背板后再进行。因此，若需制备RGB三色产品，需要先进行一种颜色的LED(发光二极管)转移(比如R LED)，再进行G/B。即转移R时，驱动背板上G\B位置需要空出来。此时LLO的激光将透过两R LED之间的区域直接照射到背板的In/Sn点以及线路上，会对bonding点和驱动背板造成损伤，无法进行后续的G\B LED的绑定。所以目前该方法只能进行一次LLO，即一种颜色的LED转移，如制备RRR产品(驱动背板上原用于绑定G\B LED位置的区域都一次性绑定R LED)。
发明内容
本发明提供一种生长基板、显示面板及其制作方法，其不仅能够在发光芯片转移到驱动背板上时，防止激光对驱动背板造成损伤，进而完成对同一驱动背板进行多次发光芯片的转移，还能够提高激光利用率。
本发明第一方面公开了一种生长基板，包括：基板，所述基板包括多个间隔且呈阵列排布的芯片生长区以及位于多个所述芯片生长区之间的非生长区，所述生长基板还包括设置在所述基板上的折射结构，所述折射结构在所述基板上的正投影覆盖所述非生长区，并与所述芯片生长区的至少部分区域不存在交叠，所述折射结构用于将与所述非生长区对应的光线折射到与所述芯片生长区对应的位置。
本发明第二方面公开了一种显示面板的制作方法，包括：提供驱动背板，所述驱动背 板具有多个阵列排布的绑定区；提供生长基板，所述生长基板包括基板、发光芯片和折射结构，所述基板包括多个间隔且呈阵列排布的芯片生长区以及位于多个所述芯片生长区之间的非生长区，所述发光芯片对应形成在所述芯片生长区，所述折射结构在所述基板上的正投影覆盖所述非生长区；将所述生长基板与所述驱动背板进行对位连接，以使所述基板上的发光芯片与其对位的所述绑定区进行绑定；在所述生长基板远离所述驱动背板的一侧提供光源；在所述发光芯片与其对位的所述绑定区绑定之后，利用所述光源发出的光线将所述发光芯片与所述基板相剥离。
本发明第三方面公开了一种显示面板，所述显示面板根据上述的制作方法制成。
本发明方案的生长基板在采用激光剥离的方式转移发光芯片至驱动背板上时，向着基板的非生长区照射的光线会经过折射结构，进而发生折射，以改变光的传播路径，使其至少部分光线会自非生长区向着非生长区两边的芯片生长区的方向发生折射。因此，降低了光线直接透光非生长区照射到驱动背板对应非生长区的绑定区域的几率，保证了该绑定区域的线路不受损害，以方便后续二次甚至多次的发光芯片转移，最终能够实现RGB三色产品的制备；还能够使得激光器发出的光线向着芯片生长区聚集，进而可以减少发光芯片剥离时所需要激光能量，节约了成本。
综上，本发明的生长基板能够在采用激光剥离的方式转移发光芯片至驱动背板上时防止激光对驱动背板造成损伤，进而完成对同一驱动背板进行多次发光芯片的转移，还能够提高激光利用率。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本公开。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本发明的实施例，并与说明书一起用于解释本发明的原理。显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示出了本发明实施例一所述的生长基板的部分截面结构示意图。
图2示出了本发明实施例一所述生长基板设有调节层时的截面结构示意图。
图3示出了本发明实施例一中光线经过生长基板的路径示意图。
图4示出了本发明实施例一所述的基板的平面结构示意图。
图5示出了本发明实施例一所述的生长基板的平面结构示意图。
图6示出了本发明实施例一所述的生长基板的另一视角的平面结构示意图。
图7示出了本发明实施例二所述的显示面板的步骤S1-S4的制作流程框图。
图8示出了本发明实施例二所述的显示面板的步骤S21-S25的制作流程框图。
图9示出了本发明实施例二所述的生长基板转移至驱动背板上时的光线路径示意图。
本发明的实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的范例；相反，提供这些实施方式使得本发明将更加全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。
此外，所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施例中。在下面的描述中，提供许多具体细节从而给出对本申请的实施例的充分理解。然而，本领域技术人员将意识到，可以实践本申请的技术方案而没有特定细节中的一个或更多，或者可以采用其它的方法、组元、装置、步骤等。在其它情况下，不详细示出或描述公知方法、装置、实现或者操作以避免模糊本申请的各方面。
下面结合附图和具体实施例对本申请作进一步详述。在此需要说明的是，下面所描述的本申请各个实施例中所涉及的技术特征只要彼此之间未构成冲突就可以相互组合。下面通过参考附图描述的实施例是示例性的，旨在用于解释本申请，而不能理解为对本申请的限制。
实施例一
请参照图1至图6所示，本发明实施例提供了一种生长基板，用于直接将生长制备完成的发光芯片12与驱动背板进行结合(称作direct bonding)。
示例的，发光芯片12例如为LED(发光二极管)，发光二极管通过驱动背板上的铟或锡(In/Sn)点熔融再冷却，以实现固定发光二极管的电极部121，完成发光二极管绑定(bonding)在驱动背板上，之后再通过激光将发光二极管与生长基板相剥离(LLO)，从而完成转移。
应理解的是，生长基板用于直接将生长制备好LED(发光二极管)与驱动背板进行对组(称作direct bonding)这种方法无需额外的转移中间步骤和暂态基板等，方法简单且成本低。
在一些实施例中，生长基板需制备转移RGB三色产品(红、绿、蓝三种颜色的发光二极管)时，可以先进行一种颜色的发光二极管进行转移(比如R LED)，再进行转移另外两种颜色的发光二极管。即转移红色发光二极管时，驱动背板上另外两种颜色的发光二极管的位置需要空出来。
示例的，两两LED pitch(两个发光二极管之间的间距)等于3倍像素pitch(3倍显示器的像素间距)。
在本实施例中，生长基板包括用于生长发光芯片12的基板11。其中，基板11为蓝宝石材料制成。
示例的，发光芯片12为Mini LED(次毫米发光二极管)。即发光芯片12的尺寸介于50～200μm之间的LED(发光二极管)器件。由Mini LED像素阵列、驱动电路组成且像素中心间距为0.3-1.5mm的单元。
示例的，发光芯片12为Micro LED(微米发光二极管)。Micro LED显示技术是指以自发光的微米量级的LED(发光二极管)为发光像素单元，将其组装到驱动背板上形成高密度LED阵列的显示技术。
在本实施例中，如图4所示，基板11包括多个间隔且呈阵列排布的芯片生长区111以及位于多个芯片生长区111之间的非生长区112。
应理解的是，结合图4至6所示，芯片生长区111和非生长区112共同覆盖整个基板11的表面，芯片生长区111与发光芯片12一一对应设置。
在本实施例中，结合图6所示，生长基板还包括设置在基板11上的折射结构13。折射结构13在基板11上的正投影完全覆盖非生长区112，并与芯片生长区111的至少部分区域不存在交叠，折射结构13用于将与非生长区112对应的光线折射到与芯片生长区111对应的位置。
应理解的是，折射结构13和发光芯片12共同覆盖整个基板11的表面。其中，折射结构13和发光芯片12可以是位于基板11的同一侧，也可以是位于基板11的两个相对侧。但需保证光线穿过基板11时，会照射到折射结构13和发光芯片12的其中之一。
在本发明中，结合图3所示，当生长基板在采用激光剥离的方式转移芯片至驱动背板上时，向着基板11的非生长区112照射的光线会经过折射结构13，进而发生折射，改变光的传播路径，使其至少部分光线会自非生长区112向着芯片生长区111的方向发生折射。因此，不仅可以降低光线照射到驱动背板以对应非生长区112的绑定 区的几率，保证该绑定区的线路不受损害，以方便后续二次转移；还能够使得激光器发出的光线向着芯片生长区111聚集，进而可以减少激光的能量，节约成本。
在本实施例中，结合图3、图4和图5所示，基板11具有在基板11的厚度方向上相对设置的第一表面11a和第二表面11b，第一表面11a中位于芯片生长区111的部分生长有发光芯片12。其中，发光芯片12覆盖整个芯片生长区111。
在本实施例中，如图6所示，折射结构13设于第二表面11b，且在基板11上的正投影至少覆盖整个非生长区112，折射结构13远离基板11的一侧为入光侧。
当然，在其他实施例中，折射结构13也可以是设置于第一表面11a，并位于多个芯片生长区111之间。但无论折射结构13位于第一表面11a还是第二表面11b，其正投影均至少覆盖非生长区112。
应理解的是，当折射结构13设于第二表面11b，并在基板11上的正投影覆盖非生长区112时，激光器发出的光线自第二表面11b向着第一表面11a射出时，光线会先经过折射结构13且发生折射，再经过基板11的第二表面11b，并向着芯片生长区111的位置传播，直至从第一表面11a的芯片生长区111正对的位置射出，并照射在发光芯片12上。因此，不仅降低了激光器发出的光线直接照射到非生长区112正对驱动背板位置的几率，还将激光器发出的光线向着芯片生长区111聚集，以方便剥离发光芯片12，提高了光线的利用率。
当折射结构13设于第一表面11a时，同样能够降低激光器发出的光线直接照射到非生长区112正对驱动背板位置的几率。
在本实施例中，如图1至图3所示，折射结构13在基板11上的正投影还覆盖芯片生长区111的边缘。
应理解的是，折射结构13在第一表面11a上的正投影与芯片生长区111内的发光芯片12在第一表面11a上的正投影的周侧边缘相交叠，保证光线不会自折射结构13与芯片生长区111之间对应的空隙处发生漏光。且为保证有足够多的光线会照射在芯片生长区111以实现发光芯片12的剥离，只需使得折射结构13在第一表面11a上的正投影与芯片生长区111内的发光芯片12在第一表面11a上的正投影的周侧边缘相交叠即可，无需完全覆盖芯片生长区111。
在本实施例中，结合图2和图4所示，生长基板还包括调节层14。调节层14在基板11上的正投影至少覆盖非生长区112，且调节层14位于折射结构13的入光侧。
示例的，调节层14在基板11上的正投影覆盖整个芯片生长区111以及非生长区 112。
示例的，调节层14也即透明封装层，其具体为使用一环氧树脂、聚酰亚胺、亚克力等透明材料形成，并用于将折射结构13封装在基板11的第二表面11b上。
示例的，折射结构13例如SiNx等透明材料形成。
在本实施例中，调节层14的折射率为n1，折射结构13的折射率为n2，n1＞n2。
应理解的是，SiNx等透明材料形成的折射结构13的折射率一般大于1.9，而空气的折射率在标准状态下一般为1.0左右。此时，若光线直接经空气进入折射结构13，其折射角度不能够满足绝大部分光线均会传播至芯片生长区111附近，进而照射到发光芯片12与第一表面11a之间。因此，采用调节层14设置在折射结构13的入光侧，且调节层14的折射率大于折射结构13的折射率，能够满足绝大部分光线均会传播至芯片生长区111附近，进而照射到发光芯片12与第一表面11a之间。
在本实施例中，结合图1所示，相邻两芯片生长区111之间的垂直距离为d，折射结构的最大高度为h，折射结构13的入射角为α1(即入射光线与入射表面法线A的夹角为α1)，折射结构13的折射角为α2(折射光线与法线A的夹角为α2)，且满足以下关系式：2Cos(α2-α1)×h＞d。此时，几乎能够完全保证激光器发出的光线在经过折射结构13后，不会从非生长区112的正对区域射出，而是射向第一表面11a与发光芯片12之间的位置。因此，不仅保证了从激光器发出的光线几乎不会照射到驱动背板上，还能将该部分光线用于剥离发光芯片12，提高光线利用率。
在一些实施例中，折射结构13具有底结构面132及两侧结构面131，底结构面132与基板11相平行或相贴合，底结构面132具有相对的第一边界和第二边界，两侧结构面131远离底结构面132的边界彼此相连，一侧结构面131靠近底结构面132的边界与第一边界相连，另一侧结构面131靠近底结构面132的边界与第二边界相连，两侧结构面131与底结构面132之间的夹角均为锐角。
示例的，两侧结构面131为折射结构13的入光面。
示例的，折射结构13包括三棱柱。其中，折射结构13可以是多个三棱柱共同形成，底结构面132及两侧结构面131为三棱柱的三个侧面。三棱柱还包括两个底面133，两个底面133均与基板11相垂直，且三棱柱的两个底面133的形状为等腰三角形。
示例的，各三棱柱两个底面133均为等腰三角形，且各三棱柱的底结构面132均与基板11相连接。其中，各三棱柱之间紧密排布且不存在间隙。且需保证折射结构13的各个入光面相对第二表面11b均为斜面。
应理解的是，折射结构13为一体成型形成。
示例的，形成折射结构13的三棱柱的两个底面133均为等腰直角三角形。当然，在其他实施例中，形成折射结构13的三棱柱的两个底面133也可以是其他普通的等腰三角形。
应理解的是，形成折射结构13的三棱柱的两个底面133互相平行，而底结构面132及两侧结构面131的法线在同一平面上。
此外，如图1所示，形成折射结构13的三棱柱的两个底面133均为等腰三角形，能够保证折射结构13的最高顶点13a(三棱柱与第二表面11b距离最大的顶点13a)与相邻两发光芯片12与折射结构13的最高顶点13a之间的间距均为d1，且d1＝1/2d；也就是说，形成折射结构13的三棱柱的底结构面132与第二表面11b相连接后，其余两个侧结构面131为对称设置。因此，当激光器发出的光线从折射结构13的入光侧的正上方照射时，为三棱柱的折射结构13的两个侧结构面131所接受到的光线总量几乎是均匀的。并且，光线经过两个侧结构面131后射向的方向是相反的，进而可以将对应射入非生长区112中间区域的光线向着非生长区112两边的芯片生长区111传播，避免光线经过两个侧结构面131后相互干涉；同时，相邻两个芯片生长区111内的发光芯片12所接受到的激光能量几乎是相同的，便于控制激光能量的大小。
在其他实施例中，折射结构13还可以是圆锥、棱锥、四棱柱、五棱柱等其他可以实现光的折射的结构中的一种。
在本实施例中，如图1至图3以及图6所示，折射结构13为多个三棱柱共同形成。
在本实施例中，生长基板还包括遮光层15，两侧结构面131的相接处被遮光层15遮挡。其中，两侧结构面131的相接包括了折射结构13的顶点13a所在的位置。
示例的，遮光层15设置在调节层14上，同样位于调节层14的入光侧；当然，在其他实施例中，遮光层15可直接设置在折射结构13上，并位于折射结构13的入光侧，以满足折射结构13的顶点13a处的入光侧设有遮光层15。
应理解的是，为了防止形成折射结构13的三棱柱的顶点13a处无法对光线进行折射，可以在对应位置涂布一条黑色的遮光层15，直接防止光线自形成折射结构13的三棱柱的顶点进入其内部。其中，此处的三棱柱的顶点13a应是三棱柱相对第二表面11b的最高顶点13a。
在其他实施例中，连接各三棱柱最高顶点13a的棱也可以采用一条黑色的遮光层 15覆盖，防止光线从此处进入其内部，并直接径直透过基板11。
在本实施例中，调节层14在基板11上的正投影还覆盖芯片生长区111；调节层14远离折射结构13的表面为与基板11相平行的平面。
应理解的是，调节层14远离折射结构13的表面为水平面。而激光几乎是从调节层14的正上方垂直射入。因此，光线通过调节层14时，角度不发生变化或者变化可以忽略不计。
在本实施例中，基板11的折射率为n3，折射结构13的折射率为n2，n3＜n2。
应理解的是，为蓝宝石的基板11的折射率n3一般为1.8，为了保证光线从折射结构13射入蓝宝石时，折射光经过蓝宝石后不射出LED芯片范围，需要n2>n3。
在本实施例中，发光芯片12包括与第一表面11a相接触的P型半导体层或者N型半导体层。P型半导体层或者N型半导体层均由GaN(氮化镓)形成。因此，当激光器发出的光线自第二表面11b的一侧向着第一表面11a照射至发光芯片12的氮化镓层后，发光芯片12会与第一表面11a相脱离，从而实现发光芯片12与基板11的剥离。
在本实施例中，发光芯片12为微米发光二极管芯片(Micro LED芯片)。且各发光芯片12均包括未掺杂半导体层(U GaN)、以及依次层叠设置在未掺杂半导体层上方的N型半导体层、多量子阱层和P型半导体层。
应理解的是，N型半导体层即自由电子浓度远大于空穴浓度的杂质半导体层，而P型半导体层又称空穴型半导体层，是以带正电的空穴导电为主的半导体层。其中，N型半导体层例如由N型掺杂氮化镓(N GaN)形成；P型半导体层例如由P型掺杂氮化镓(P GaN)形成。
实施例二
结合图7和图9所示，本发明第二方面公开了一种显示面板的制作方法，其采用实施例一中的生长基板将发光芯片12转移至显示面板的驱动背板20上。
在本实施例中，显示面板的制作方法包括：
S1：提供驱动背板20，驱动背板20具有多个阵列排布的绑定区21。
S2：提供生长基板。
在本实施例中，生长基板包括基板11、发光芯片12和折射结构13，基板11包括多个间隔且呈阵列排布的芯片生长区111以及位于多个芯片生长区111之间的非生长区112，发光芯片12对应形成在芯片生长区111，折射结构13在基板11上的正投 影覆盖非生长区112。
结合图8所示，其中，提供生长基板包括：
S21:提供基板11。其中，基板11采用蓝宝石材料制成，其折射率为n3，n3一般为1.8。
应理解的是，基板11包括多个间隔且呈阵列排布的芯片生长区111以及位于多个芯片生长区111之间的非生长区112。
S22：在基板11的第一表面11a上制作多个间隔设置的发光芯片12，各发光芯片12一一对应位于芯片生长区111内。其中，芯片生长区111的大小根据发光芯片12的大小设置，保证芯片生长区111被发光芯片12完全覆盖。
示例的，发光芯片12为微米发光二极管芯片(Micro LED芯片)。且各发光芯片12均包括未掺杂半导体层(U GaN)、以及依次层叠设置在未掺杂半导体层上方的N型半导体层、多量子阱层和P型半导体层。
应理解的是，发光芯片12与第一表面11a相接触的为P型半导体层或者N型半导体层。其中，N型半导体层例如由N型掺杂氮化镓(N GaN)形成；P型半导体层例如由P型掺杂氮化镓(P GaN)形成。
示例的，发光芯片12还包括电极部121，电极部121设置于发光芯片12远离第一表面11a的一侧，用于与显示面板的驱动背板20相绑定。
在本实施例中，发光芯片12例如为发光颜色为红、绿或蓝色的微米发光二极管芯片的一种。
S23：在基板11的第二表面11b上形成折射结构13，折射结构13在基板11上的正投影至少覆盖非生长区112。
示例的，折射结构13例如为SiNx等透明材料形成。
示例的，折射结构13具有底结构面132及两侧结构面131，底结构面132与基板相平行或相贴合，底结构面132具有相对的第一边界和第二边界，两侧结构面131远离底结构面132的边界彼此相连进而形成三棱柱的其中一条棱，一侧结构面131靠近底结构面132的边界与第一边界相连，另一侧结构面131靠近底结构面132的边界与第二边界相连，两侧结构面131与底结构面132之间的夹角均为锐角。
示例的，折射结构13为三棱柱，底结构面132及两侧结构面131均为三棱柱的三个侧面，三棱柱的两个底面133与基板11相垂直，且三棱柱的两个底面133的形状为等腰三角形。
示例的，各三棱柱两个底面133均为等腰三角形，且各三棱柱的底结构面132均与基板11相连接。其中，各三棱柱之间紧密排布且不存在间隙。且需保证折射结构13的各个入光面相对第二表面11b均为斜面。
应理解的是，折射结构13为一体成型形成。
示例的，形成折射结构13的三棱柱的两个底面133均为等腰直角三角形。当然，在其他实施例中，形成折射结构13的三棱柱的两个底面133也可以是其他普通的等腰三角形。
应理解的是，形成折射结构13的三棱柱的两个底面133互相平行，而底结构面132及两侧结构面131的法线在同一平面上。
此外，形成折射结构13的三棱柱的两个底面133均为等腰三角形，其最高顶点13a(三棱柱与第二表面11b距离最大的顶点13a)正好位于两两LED中间，能够保证形成折射结构13的三棱柱的最高顶点13a与相邻两发光芯片12的距离均为d1，且d1＝1/2d。
S24：在基板11的第二表面11b形成整面的调节层14，以对折射结构13进行封装。
示例的，调节层14覆盖整个第二表面11b。
示例的，调节层14采用一环氧树脂、聚酰亚胺、亚克力等透明材料形成。
应理解的是，调节层14的折射率为n1；折射结构13的折射率为n2，保证n1>n2。
S25：在调节层14上对应三棱柱的两侧结构面131的相接处涂布一条黑色遮光材料，进而形成遮光层15，以遮挡两侧结构面131的相接处。其中，两侧结构面131的相接处包括了折射结构13的顶点13a所在的位置，进而能够防止三棱柱顶点13a处无法对光线进行折射，最终形成生长基板。
S3：将生长基板与驱动背板20进行对位连接，以使基板11上的发光芯片12与其对位的绑定区21进行绑定。
示例的，发光芯片12通过驱动背板20上的铟或锡(In/Sn)点熔融再冷却，以将电极部121固定在驱动背板20上的绑定区21，最终完成发光芯片12绑定于驱动背板20上。
在本实施例中，多个绑定区21间隔设置，一个发光芯片12对应设置在一个绑定区21内。其中，单个生长基板上的发光芯片12数量小于单个驱动背板20上绑定区21的数量。
示例的，在制作由R(红色)、G(绿色)以及B(蓝色)三色显示面板产品时，单个驱动背板20上绑定区21的数量为单个生长基板上的发光芯片12的三倍。若是，制作由R(红色)、G(绿色)、B(蓝色)以及W(白色)四种颜色形成的显示面板时，单个驱动背板20上绑定区21的数量为单个生长基板上的发光芯片12的四倍。其中，单个驱动背板20上绑定区21的数量与单个生长基板上的发光芯片12的数量关系以此类推。
应理解的是，在制作三色显示面板产品时，需进行三次发光芯片12转移，第一次进行发光芯片12转移后(如转移R LED)，两个发光芯片12之间还应保留两个未绑定发光芯片12的绑定区21，以方便进行后续两次发光芯片12(如转移G LED、B LED)的转移；第二次进行发光芯片12转移后(如转移G LED)，两个发光芯片12之间还应保留一个未绑定发光芯片12的绑定区21，以方便进行最后一次发光芯片12(如转移B LED)的转移；最后一次进行发光芯片12转移时，直接将发光芯片(如转移B LED)转移至剩余的绑定区21上即可。
S4：在生长基板远离驱动背板20的一侧提供光源；在发光芯片12与其对位的绑定区21绑定之后，利用光源发出的光线将发光芯片12与基板11相剥离。
示例的，通过LLO(激光剥离)的方式，使激光在基板11的正上方自第二表面11b的一侧照向第一表面11a。
应理解的是，当激光器发出的光线自第二表面11b的一侧向着第一表面11a照射至发光芯片12的氮化镓后，发光芯片12会与第一表面11a相脱离，从而实现发光芯片12与基板11的剥离。
在本实施例中，因为LLO(激光剥离)是发光芯片12绑定在驱动背板20后再进行。因此，若需制备RGB三色产品的显示面板，需要按照S1-S4的步骤先进行一种颜色转移(比如R颜色的发光芯片12)，再重复S1-S4的步骤两次以进行G/B颜色的发光芯片12，即可制备RGB三色产品的显示面板。
示例的，即转移R颜色的发光芯片12时，驱动背板20上用于绑定G\B颜色的发光芯片12的绑定区21的位置需要空出来，此时，生长基板的折射结构13在驱动背板20上的正投影至少覆盖用于G\B颜色的发光芯片12对应的绑定区21位置；在转移G颜色的发光芯片12时，驱动背板20上用于绑定R\B颜色的发光芯片12的绑定区21的位置需要空出来，此时，生长基板的折射结构13在驱动背板20上的正投影至少覆盖用于R\B颜色的发光芯片12对应的绑定区21位置；以此类推，在转移B颜 色的发光芯片12时，驱动背板20上用于绑定R\G颜色的发光芯片12的绑定区21的位置需要空出来，此时，生长基板的折射结构13在驱动背板20上的正投影至少覆盖用于R\G颜色的发光芯片12对应的绑定区21位置。
应理解的是，依次重复步骤S1-S4N次即可转移N种颜色的发光芯片12。
综上，本实施例中的显示面板在完成发光芯片12制作后，紧接着，在基板11第二表面11b的非生长区112(即各发光芯片12之间的间隙区)，形成截面为等腰三角形的三棱柱的折射结构13，其折射率为n2。之后使用一环氧树脂、聚酰亚胺、亚克力等透明材料形成表面为水平的调节层14，以对折射结构13进行封装，调节层14的折射率为n1，保证n1>n2。当激光从第二表面11b的一侧射入时，先射入调节层14，光线通过调节层14后，角度几乎不发生变化；之后从调节层14射向折射结构13的侧结构面131，发生折射，入射角为α1(等于三棱柱的侧结构面131和基板11第二表面11b的夹角，即入射光线与入射表面法线A的夹角为α1)，折射角为α2(折射光线与法线A的夹角为α2)，其中，Sinα1/Sinα2＝n2/n1。则相邻发光芯片12之间的光线会向发光芯片12聚集，照射到发光芯片12的GaN上，而不会从非生长区112射出，避免了激光照射到驱动背板20上，同时提高了激光利用率。
其中，若两两发光芯片12的间距为d，形成折射结构13的三棱柱的最高顶点13a距离基板11之间的间距为h，则折射结构13的形状和材料折射率需要满足以下关系式：2Cos(α2-α1)×h＞d。
此外，形成折射结构13的三棱柱的顶点13a处无法对光线进行折射，可以在对应位置涂布一条黑色遮光材料。
相应地，蓝宝石材料制成的基板11的折射率n3一般为1.8，为了保证光线从折射结构13射入蓝宝石材料制成的基板11，避免折射光经过蓝宝石材料制成的基板11后不射出至发光芯片12，需要n2>n3。同时，形成折射结构13的三棱柱在基板11上的正投影不能完全覆盖发光芯片12在基板11上的正投影，以免影响发光芯片12的剥离。
关于生长基板的其他结构，请参照实施例一，此处不再赘述。
实施例三
本发明第三方面公开了一种显示面板，显示面板根据实施例二中的制作方法制成。
其中，显示面板可运用于手机、电脑、车载显示器、电子广告牌中等。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请中，除非另有明确的规定和限定，术语“装配”、“连接”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本说明书的描述中，参考术语“一些实施例”、“示例地”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本申请的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本申请的限制，本领域的普通技术人员在本申请的范围内可以对上述实施例进行变化、修改、替换和变型，故但凡依本申请的权利要求和说明书所做的变化或修饰，皆应属于本申请专利涵盖的范围之内。

Claims (17)

  1. 一种生长基板，包括：基板，所述基板包括多个间隔且呈阵列排布的芯片生长区以及位于多个所述芯片生长区之间的非生长区，其中，
    所述生长基板还包括设置在所述基板上的折射结构，所述折射结构在所述基板上的正投影覆盖所述非生长区，并与所述芯片生长区的至少部分区域不存在交叠，所述折射结构用于将与所述非生长区对应的光线折射到与所述芯片生长区对应的位置。
  2. 根据权利要求1所述的生长基板，其中，所述基板具有在所述基板的厚度方向上相对的第一表面和第二表面，所述第一表面中位于所述芯片生长区的部分生长有发光芯片；其中，
    所述折射结构设于所述第二表面，且在所述基板上的正投影覆盖所述非生长区，所述折射结构远离所述基板的一侧为入光侧。
  3. 根据权利要求2所述的生长基板，其中，所述折射结构在所述基板上的正投影还覆盖所述芯片生长区的边缘。
  4. 根据权利要求2所述的生长基板，其中，相邻两所述芯片生长区之间的垂直距离为d，所述折射结构的最大高度为h，所述折射结构的入射角为α1，所述折射结构的折射角为α2，且满足以下关系式：
    2Cos(α2-α1)×h＞d。
  5. 根据权利要求1至4中任一项所述的生长基板，其中，所述生长基板还包括调节层，所述调节层在所述基板上的正投影至少覆盖所述非生长区，且所述调节层位于所述折射结构的入光侧，其中，
    所述调节层的折射率为n1，所述折射结构的折射率为n2，n1＞n2。
  6. 根据权利要求5所述的生长基板，其中，所述折射结构具有底结构面及两侧结构面，所述底结构面与所述基板相平行或相贴合，所述底结构面具有相对的第一边界和第二边界，所述两侧结构面远离所述底结构面的边界彼此相连，一所述侧结构面靠近所述底结构面的边界与所述第一边界相连，另一所述侧结构面靠近所述底结构面的边界与所述第二边界相连，所述两侧结构面与所述底结构面之间的夹角均为锐角。
  7. 根据权利要求6所述的生长基板，其中，所述折射结构包括三棱柱，所述底结构面及所述两侧结构面为所述三棱柱的三个侧面，所述三棱柱的两个底面与所述基板相垂直，且所述三棱柱的两个底面的形状为等腰三角形；和/或
    所述生长基板还包括遮光层，所述两侧结构面的相接处被所述遮光层遮挡；和/或
    所述调节层在所述基板上的正投影还覆盖所述芯片生长区；
    所述调节层远离所述折射结构的表面为与所述基板相平行的平面。
  8. 根据权利要求7所述的生长基板，其中，形成所述折射结构的三棱柱的两个 所述底面互相平行，所述底结构面及两所述侧结构面的法线在同一平面上。
  9. 根据权利要求7所述的生长基板，其中，形成所述折射结构的三棱柱的两个底面均为等腰直角三角形。
  10. 根据权利要求5所述的生长基板，其中，所述调节层在所述基板上的正投影覆盖整个所述芯片生长区以及所述非生长区。
  11. 根据权利要求5所述的生长基板，其中，所述调节层为透明封装层。
  12. 根据权利要求2所述的生长基板，其中，所述基板的折射率为n3，所述折射结构的折射率为n2，n3＜n2。
  13. 根据权利要求2所述的生长基板，其中，所述发光芯片为次毫米发光二极管或微米发光二极管。
  14. 一种显示面板的制作方法，包括：
    提供驱动背板，所述驱动背板具有多个阵列排布的绑定区；
    提供生长基板，所述生长基板包括基板、发光芯片和折射结构，所述基板包括多个间隔且呈阵列排布的芯片生长区以及位于多个所述芯片生长区之间的非生长区，所述发光芯片对应形成在所述芯片生长区，所述折射结构在所述基板上的正投影覆盖所述非生长区；
    将所述生长基板与所述驱动背板进行对位连接，以使所述基板上的发光芯片与其对位的所述绑定区进行绑定；
    在所述生长基板远离所述驱动背板的一侧提供光源；
    在所述发光芯片与其对位的所述绑定区绑定之后，利用所述光源发出的光线将所述发光芯片与所述基板相剥离。
  15. 根据权利要求14所述的显示面板的制作方法，其中，所述提供生长基板的步骤包括：
    提供基板；
    在所述基板的第一表面上制作多个间隔设置的所述发光芯片，各所述发光芯片一一对应位于所述芯片生长区内；
    在所述基板的第二表面上形成所述折射结构，所述折射结构在所述基板上的正投影至少覆盖所述非生长区；
    在所述基板的第二表面形成整面的调节层，以对所述折射结构进行封装；以及
    在所述调节层上对应三棱柱的两侧结构面的相接处涂布一条黑色遮光材料，以形成遮光层，以遮挡两所述侧结构面的相接处，其中，所述折射结构具有底结构面及两所述侧结构面，且所述折射结构由多个三棱柱形成。
  16. 根据权利要求15所述的显示面板的制作方法，其中，所述基板具有在所述基板的厚度方向上相对的第一表面和第二表面，所述发光芯片位于所述第一表面，所述折射结构位于所述第二表面，所述折射结构远离所述基板的一侧为入光侧。
  17. 一种显示面板，所述显示面板一制作方法制成，所述制作方法包括：
    提供驱动背板，所述驱动背板具有多个阵列排布的绑定区；
    提供生长基板，所述生长基板包括基板、发光芯片和折射结构，所述基板包括多个间隔且呈阵列排布的芯片生长区以及位于多个所述芯片生长区之间的非生长区，所述发光芯片对应形成在所述芯片生长区，所述折射结构在所述基板上的正投影覆盖所述非生长区；
    将所述生长基板与所述驱动背板进行对位连接，以使所述基板上的发光芯片与其对位的所述绑定区进行绑定；
    在所述生长基板远离所述驱动背板的一侧提供光源；
    在所述发光芯片与其对位的所述绑定区绑定之后，利用所述光源发出的光线将所述发光芯片与所述基板相剥离。
PCT/CN2023/097432 2022-09-29 2023-05-31 生长基板、显示面板及其制作方法 Ceased WO2024066431A1 (zh)

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