WO2024066034A1 - Electron detector and electron detection system - Google Patents

Electron detector and electron detection system Download PDF

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Publication number
WO2024066034A1
WO2024066034A1 PCT/CN2022/136693 CN2022136693W WO2024066034A1 WO 2024066034 A1 WO2024066034 A1 WO 2024066034A1 CN 2022136693 W CN2022136693 W CN 2022136693W WO 2024066034 A1 WO2024066034 A1 WO 2024066034A1
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electron
voltage
electron multiplier
secondary electrons
signal
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PCT/CN2022/136693
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French (fr)
Chinese (zh)
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胡继闯
何伟
李宏飞
尚卷卷
张景龙
宋航
张振旗
李凤民
郎永辉
李明惠
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纳克微束(北京)有限公司
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Publication of WO2024066034A1 publication Critical patent/WO2024066034A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

Definitions

  • the present invention relates to the field of electronic detection, and in particular to an electronic detector and an electronic detection system.
  • Scanning electron microscope equipment uses the interaction between charged particle beams and matter to obtain information such as sample morphology, composition, energy spectrum, and light spectrum.
  • the secondary electrons, backscattered electrons, Auger electrons, and X-rays generated by the interaction between the incident electron beam and the sample can achieve the purpose of characterizing the microscopic morphology and composition of the material.
  • Secondary electrons refer to the extranuclear electrons that are bombarded by a high-energy incident electron beam on the sample. They mainly come from a depth of 1-10 nm on the sample surface, and their energy range is usually between 0-50 eV. Secondary electrons can well display the microscopic morphology of the sample surface.
  • the secondary electron detector of the mainstream scanning electron microscope is usually an E-T (Everhart-Thornley) secondary electron detector, which is mainly used for detection outside the tube: the working principle of the E-T secondary electron detector is to use a Faraday cage to collect secondary electrons at a certain angle. The collected secondary electrons are accelerated to collide with the scintillator (usually +10Kv high voltage) and converted into a certain number of photons. The generated photons are transmitted to the photomultiplier tube (PMT) through the photoconductive medium for photoelectron conversion and electron multiplication, and then the current formed after electron multiplication is processed by the amplifier circuit.
  • E-T Errhart-Thornley
  • the main processes of the E-T secondary electron detector from electron collection to input to the signal amplification circuit are: electron-photon conversion, photon transmission, photon-electron conversion, electron multiplication, current-voltage conversion, etc., so there are problems such as low quantum efficiency and spectral response peak mismatch.
  • the photoconductive medium needs to be bonded by optical glue, and there is reflection loss during light transmission, resulting in low electron detection efficiency and poor image signal-to-noise ratio, affecting the final imaging quality.
  • PMT needs to increase the multiplication voltage when the signal is weak, resulting in the synchronous amplification of noise, and at the same time, it also limits the signal acquisition speed to a certain extent.
  • the use of 10kV high voltage will increase the difficulty of vacuum sealing and insulation; special-shaped luminescent materials and photoconductive media will increase the processing difficulty and cost.
  • the main purpose of the embodiments of the present invention is to provide an electronic detector and an electronic detection system to reduce electron loss, thereby achieving the purpose and advantage of enhancing the image signal-to-noise ratio, increasing the acquisition speed and optimizing the detector structure.
  • an electronic detector comprising:
  • An electron multiplier fixed to the shielding outer cylinder is used to perform a first-order multiplication amplification on secondary electrons based on a first voltage at an input end of the electron multiplier and a second voltage at an output end of the electron multiplier;
  • a power supply ring connected to the electron multiplier input terminal and the electron multiplier output terminal respectively, used to provide a first voltage to the electron multiplier input terminal and a second voltage to the electron multiplier output terminal;
  • a semiconductor detector fixed to the shielding outer cylinder is used to apply a third voltage and a bias voltage to the secondary electrons that have undergone primary multiplication and amplification to convert the secondary electrons into current signals after secondary multiplication and amplification;
  • an amplifier circuit connected to the semiconductor detector and used for converting the current signal into a voltage signal
  • the signal amplification processing circuit is used to amplify the voltage signal and convert it into an image signal.
  • it also includes:
  • the first focusing lens fixed to the Faraday cage is used to focus the secondary electrons.
  • it also includes:
  • it also includes:
  • the insulating cylinder, the electron multiplier, the semiconductor detector and the insulating ring are all fixed to the shielding outer cylinder through the insulating cylinder.
  • it also includes:
  • the second focusing lens fixed to the insulating tube is used to focus the secondary electrons that have been amplified by the first stage of multiplication and send the focused secondary electrons into the semiconductor detector.
  • it also includes:
  • a vacuum connector is used to transmit a voltage signal to a signal amplification processing circuit, and the signal amplification processing circuit is connected to the amplifier circuit through the vacuum connector.
  • it also includes:
  • Vacuum sealing flange the vacuum connector is fixed to the shielding outer cylinder through the vacuum sealing flange.
  • the electron multiplier is a discontinuous dynode electron multiplier, a channel electron multiplier or a microchannel plate.
  • the third voltage is greater than the second voltage, and the second voltage is greater than the first voltage.
  • An embodiment of the present invention further provides an electronic detection system, comprising:
  • Objective lens used to focus the electron beam onto the sample to produce secondary electrons.
  • the electron detector and electron detection system of the embodiment of the present invention include a Faraday cage for collecting secondary electrons, an electron multiplier for performing a primary multiplication and amplification on the secondary electrons, a power supply ring for providing voltage to the input and output ends of the electron multiplier, a semiconductor detector for converting the secondary electrons into current signals after performing a secondary multiplication and amplification, an amplifier circuit for converting the current signal into a voltage signal, and a signal amplification and processing circuit for converting the voltage signal into an image signal after amplification.
  • a Faraday cage for collecting secondary electrons
  • an electron multiplier for performing a primary multiplication and amplification on the secondary electrons
  • a power supply ring for providing voltage to the input and output ends of the electron multiplier
  • a semiconductor detector for converting the secondary electrons into current signals after performing a secondary multiplication and amplification
  • an amplifier circuit for converting the current signal into a voltage signal
  • a signal amplification and processing circuit for converting the voltage signal into an
  • FIG1 is a schematic diagram of an electron detector in a first embodiment of the present invention.
  • FIG2 is a schematic diagram of an electron detector in a second embodiment of the present invention.
  • FIG3 is a schematic diagram of an electron detector in a third embodiment of the present invention.
  • FIG4 is a schematic diagram of a discontinuous dynode electron multiplier according to an embodiment of the present invention.
  • FIG5 is a schematic diagram of a channel-type electron multiplier according to an embodiment of the present invention.
  • FIG6 is a schematic diagram of a microchannel plate without a central hole in an embodiment of the present invention.
  • FIG7 is a schematic diagram of a microchannel plate having a central hole in an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of an electronic detection system according to an embodiment of the present invention.
  • the embodiments of the present invention may be implemented as a system, device, apparatus, method or computer program product. Therefore, the present disclosure may be implemented in the following forms, namely: complete hardware, complete software (including firmware, resident software, microcode, etc.), or a combination of hardware and software.
  • the embodiment of the present invention provides an electron detector and an electron detection system, which can improve the electron detection efficiency, achieve the purpose and advantage of enhancing the image signal-to-noise ratio, increasing the acquisition speed and optimizing the detector structure.
  • FIG1 is a schematic diagram of an electronic detector in a first embodiment of the present invention
  • FIG2 is a schematic diagram of an electronic detector in a second embodiment of the present invention
  • FIG3 is a schematic diagram of an electronic detector in a third embodiment of the present invention.
  • the electronic detector includes:
  • Faraday cage 5 used to attract and collect secondary electrons
  • the funnel-shaped first focusing lens 6 fixed to the Faraday cage 5 is used to focus the secondary electrons.
  • the first focusing lens 6 can be welded to the Faraday cage 5 as a whole, which can efficiently collect the secondary electrons, and accelerate and focus the secondary electrons directly to the receiving surface of the electron multiplier device 7, eliminating the electron-photon-electron conversion process of the photomultiplier, and the device structure also eliminates the front glass and light guide parts, which can reduce electron loss and have a higher signal-to-noise ratio and detection efficiency.
  • the insulating ring 13 and the first focusing lens 6 welded as a whole with the Faraday cage 5 are fixed to the front end of the shielding outer cylinder 17 through the insulating ring 13 .
  • the electron multiplier 7 fixed to the shielding outer tube 17 is used to perform a first-order multiplication amplification on secondary electrons based on the first positive voltage HV1 of the electron multiplier input terminal 14-1 and the second positive voltage HV2 of the electron multiplier output terminal 14-2.
  • This process belongs to direct electron-electron amplification, which improves the quantum conversion efficiency and response speed.
  • the power supply ring 14 which is respectively connected to the electron multiplier input terminal 14-1 and the electron multiplier output terminal 14-2, is used to provide a first voltage to the electron multiplier input terminal 14-1 and a second voltage to the electron multiplier output terminal 14-2; wherein the power supply ring is welded inside the electron multiplier 7 to facilitate voltage application.
  • the doped silicon-based semiconductor detector 16 fixed to the shielding outer tube 17 is 1 mm away from the output end of the electron multiplier and is used to apply a third voltage HV3 and a bias voltage Vf to the secondary electrons after the first-stage multiplication to convert the secondary electrons into current signals after the second-stage multiplication.
  • the third positive voltage HV3 is the working reference voltage
  • the third voltage HV3 is greater than the second voltage HV2
  • the second voltage HV2 is greater than the first voltage HV1.
  • HV1 500V to 1000V
  • HV2 HV1 + (500 to 1000V)
  • HV3 HV2 + 1000V.
  • HV1, HV2, and HV3 can all be dynamically adjusted according to the signal strength of the collected electrons (for example, by adjusting the voltage difference between HV2 and HV1 to adjust the size of the first-order multiplication, and by adjusting the voltage difference between HV3 and HV2 to adjust the size of the second-order multiplication), with an adjustable gain effect, and can also optimize the voltage in real time according to the situation of the sample to be tested to obtain a higher quality image signal.
  • the operating voltage of the electron multiplier and the semiconductor detector in the present invention is usually lower than the 10kV power supply of the traditional E-T detector, which reduces the insulation withstand voltage and vacuum sealing difficulty.
  • the signal amplification processing circuit 12 is used to amplify the voltage signal and convert it into an image signal.
  • the electronic detector further comprises:
  • the insulating tube 8 , the electron multiplier 7 , the semiconductor detector 16 and the insulating ring 13 are all fixed to the shielding outer tube 17 through the insulating tube 8 .
  • the second focusing lens 15 fixed to the insulating tube 8 is used to focus the secondary electrons after the first-stage multiplication and amplification, and send the focused secondary electrons to the semiconductor detector 16.
  • the second focusing lens 15 is an annular focusing lens, which can accelerate the focused secondary electrons to continue to collide with the receiving surface of the doped silicon-based semiconductor detector 16.
  • the vacuum connector 11 is used to transmit the voltage signal to the signal amplification processing circuit 12 .
  • the signal amplification processing circuit 12 is installed on the vacuum connector 11 and is connected to the amplifier circuit 9 via the vacuum connector 11 .
  • the vacuum sealing flange 10 and the vacuum connector 11 are fixed to the shielding outer cylinder 17 through the vacuum sealing flange 10.
  • the electronic detector of the present invention can be used as a detector module and integrally installed on the corresponding interface of the scanning electron microscope equipment through the vacuum connector 11.
  • the electron multiplier in FIG1 is a discontinuous dynode electron multiplier
  • the electron multiplier in FIG2 is a channel electron multiplier
  • the electron multiplier in FIG3 is a microchannel plate.
  • the electron multiplier can be a self-developed device with an electron emission coating, a discontinuous dynode electron multiplier, a channel electron multiplier (CEM, channel electron multiplier, continuous dynode multiplier) or a microchannel plate.
  • Fig. 4 is a schematic diagram of a discontinuous dynode electron multiplier in an embodiment of the present invention.
  • the discontinuous dynode electron multiplier has a structure of multiple multiplication stages, and a positive voltage HV1 can be applied to the first electron multiplier electrode and a positive voltage HV2 can be applied to the last electron multiplier electrode through a power supply ring 14.
  • Fig. 5 is a schematic diagram of a channel type electron multiplier in an embodiment of the present invention.
  • the channel type electron multiplier is a continuous multiplication stage structure, and a positive voltage HV1 can be applied to the input end of the electron multiplier through a power supply ring 14, and a positive voltage HV2 can be applied to the output end of the electron multiplier.
  • FIG6 is a schematic diagram of a microchannel plate without a central hole in an embodiment of the present invention.
  • FIG7 is a schematic diagram of a microchannel plate with a central hole in an embodiment of the present invention.
  • the microchannel plate (MCP) is a continuous multiplication stage structure, and a positive voltage HV1 can be applied to the input end of the electron multiplier through the power supply ring 14, and a positive voltage HV2 can be applied to the output end of the electron multiplier.
  • an embodiment of the present invention further provides an electronic detection system. Since the principle of solving the problem by the electronic detection system is similar to that of the electronic detector, the implementation of the system can refer to the implementation of the electronic detector, and the repeated parts will not be repeated.
  • FIG8 is a schematic diagram of an electronic detection system according to an embodiment of the present invention. As shown in FIG8 , the electronic detection system includes:
  • Objective lens 1 used to focus electron beam 2 onto sample 3 to generate secondary electrons 4.
  • the objective lens 1 focuses the electron beam 2 to the sample 3, and the electron beam 2 sputters into the sample 3 to generate secondary electrons 4.
  • the Faraday cage 5 attracts and collects the secondary electrons, and then the electrons are effectively focused and directly accelerated to hit the receiving surface of the electron multiplier 7 through the funnel-shaped first focusing lens 6.
  • the electron multiplier 7 performs a first-stage multiplication and amplification on the secondary electrons based on the first positive voltage HV1 of the electron multiplier input terminal 14-1 and the second positive voltage HV2 of the electron multiplier output terminal 14-2.
  • the amplified secondary electrons are focused by the annular second focusing lens 15 and continue to be accelerated to hit the receiving surface of the doped silicon-based semiconductor detector 16.
  • the semiconductor detector 16 performs a second-stage amplification on the electrons and converts them into a current signal.
  • the current signal is transmitted to the amplifier circuit 9 through a wire for current-voltage conversion.
  • the converted voltage signal is transmitted to the signal amplification processing circuit 12 through the vacuum connector 11.
  • the signal amplification processing circuit 12 amplifies the voltage signal and converts it into a high-quality image signal.
  • the electron detector and electron detection system of the embodiment of the present invention enable the electron multiplier and the doped silicon-based semiconductor detector to work in combination, and through the first-stage multiplication, a sufficient amount of incident beam current enters the semiconductor detector to realize the secondary gain adjustable amplification of the low voltage signal; at the same time, the low junction capacitance of the semiconductor detector can improve the bandwidth of the detector.
  • the combination of the two effectively realizes low-noise, high-bandwidth and wide beam range detection, and more effectively amplifies signal electrons, thereby improving the scanning speed of the electron microscope instrument, the information acquisition flux and the signal-to-noise ratio of the image.

Abstract

The present invention provides an electron detector and an electron detection system. The electron detector comprises: a Faraday cage, which is used for collecting secondary electrons; an electron multiplier, which is fixed to an outer shielding cylinder and used for performing primary multiplication and amplification on the secondary electrons on the basis of a first voltage of an input end of the electron multiplier and a second voltage of an output end of the electron multiplier; a power supply ring, which is connected to the input end of the electron multiplier and the output end of the electron multiplier, respectively, and used for providing the first voltage to the input end of the electron multiplier and providing the second voltage to the output end of the electron multiplier; a semiconductor detector, which is fixed to the outer shielding cylinder and used for applying a third voltage and a bias voltage to the secondary electrons such that the secondary electrons undergo secondary multiplication and amplification and then the secondary electrons are converted into a current signal; an amplifier circuit, which is connected to the semiconductor detector and used for converting the current signal into a voltage signal; and a signal amplification processing circuit, which is used for amplifying the voltage signal and then converting same into an image signal, which can improve electronic detection efficiency and enhance the signal-to-noise ratio of an image.

Description

电子探测器及电子探测系统Electronic detectors and electronic detection systems 技术领域Technical Field
本发明涉及电子探测领域，具体地，涉及一种电子探测器及电子探测系统。The present invention relates to the field of electronic detection, and in particular to an electronic detector and an electronic detection system.
背景技术Background technique
扫描电子显微镜设备是利用带电粒子束与物质的相互作用过程，可以获得样品的形貌、成分、能谱、光谱等信息。其中，入射电子束与样品相互作用产生的二次电子、背散射电子、俄歇电子和X射线外等信息，可以达到物质微观形貌表征和成分表征的目的。Scanning electron microscope equipment uses the interaction between charged particle beams and matter to obtain information such as sample morphology, composition, energy spectrum, and light spectrum. Among them, the secondary electrons, backscattered electrons, Auger electrons, and X-rays generated by the interaction between the incident electron beam and the sample can achieve the purpose of characterizing the microscopic morphology and composition of the material.
二次电子是指样品被高能入射电子束轰击出来的核外电子，主要来自于样品表面1-10nm深度，其能量范围通常在在0-50eV之间，二次电子能够很好的显示出试样表面的微观形貌。Secondary electrons refer to the extranuclear electrons that are bombarded by a high-energy incident electron beam on the sample. They mainly come from a depth of 1-10 nm on the sample surface, and their energy range is usually between 0-50 eV. Secondary electrons can well display the microscopic morphology of the sample surface.
主流的扫描电子显微镜的二次电子探测器通常为E-T(Everhart-Thornley)二次电子探测器，主要用于镜筒外探测：E-T二次电子探测器工作原理为利用法拉第笼收集一定角度的二次电子，收集后的二次电子加速撞击到闪烁体(通常为+10Kv高压)转换成一定数量的光子，经过光导介质将产生的光子传输到光电倍增管(PMT)，进行光电子转换和电子倍增，进而将电子倍增后形成的电流利用放大电路进行信号处理。E-T二次电子探测器从电子收集到输入至信号放大电路的主要过程有：电子-光子转换、光子传输、光子-电子转换、电子倍增、电流电压转换等过程，因此存在量子效率低和光谱响应峰值不匹配等问题。光导介质需要靠光学胶进行粘接，光传输过程中存在反射损失，造成电子探测效率低，图像信噪比差，影响最终的成像质量。PMT在弱信号时需要提高倍增电压，导致噪声同步被放大，同时一定程度上也限制了信号的采集速度。10kV高压的使用会增加真空密封与绝缘的困难；异形发光材料与光导介质会使加工难度和加工成本增加。The secondary electron detector of the mainstream scanning electron microscope is usually an E-T (Everhart-Thornley) secondary electron detector, which is mainly used for detection outside the tube: the working principle of the E-T secondary electron detector is to use a Faraday cage to collect secondary electrons at a certain angle. The collected secondary electrons are accelerated to collide with the scintillator (usually +10Kv high voltage) and converted into a certain number of photons. The generated photons are transmitted to the photomultiplier tube (PMT) through the photoconductive medium for photoelectron conversion and electron multiplication, and then the current formed after electron multiplication is processed by the amplifier circuit. The main processes of the E-T secondary electron detector from electron collection to input to the signal amplification circuit are: electron-photon conversion, photon transmission, photon-electron conversion, electron multiplication, current-voltage conversion, etc., so there are problems such as low quantum efficiency and spectral response peak mismatch. The photoconductive medium needs to be bonded by optical glue, and there is reflection loss during light transmission, resulting in low electron detection efficiency and poor image signal-to-noise ratio, affecting the final imaging quality. PMT needs to increase the multiplication voltage when the signal is weak, resulting in the synchronous amplification of noise, and at the same time, it also limits the signal acquisition speed to a certain extent. The use of 10kV high voltage will increase the difficulty of vacuum sealing and insulation; special-shaped luminescent materials and photoconductive media will increase the processing difficulty and cost.
发明内容Summary of the invention
本发明实施例的主要目的在于提供一种电子探测器及电子探测系统，以减少电子损失，达到增强图像信噪比、提高采集速度和优化探测器结构的目的及优势。The main purpose of the embodiments of the present invention is to provide an electronic detector and an electronic detection system to reduce electron loss, thereby achieving the purpose and advantage of enhancing the image signal-to-noise ratio, increasing the acquisition speed and optimizing the detector structure.
为了实现上述目的，本发明实施例提供一种电子探测器，包括：In order to achieve the above object, an embodiment of the present invention provides an electronic detector, comprising:
法拉第笼，用于收集二次电子；Faraday cage, used to collect secondary electrons;
固定于屏蔽外筒的电子倍增器，用于基于电子倍增器输入端的第一电压和电子倍增器输出端的第二电压对二次电子进行一级倍增放大；An electron multiplier fixed to the shielding outer cylinder is used to perform a first-order multiplication amplification on secondary electrons based on a first voltage at an input end of the electron multiplier and a second voltage at an output end of the electron multiplier;
分别与电子倍增器输入端和电子倍增器输出端连接的供电环，用于向电子倍增器输入端提供第一电压，向电子倍增器输出端提供第二电压；A power supply ring connected to the electron multiplier input terminal and the electron multiplier output terminal respectively, used to provide a first voltage to the electron multiplier input terminal and a second voltage to the electron multiplier output terminal;
固定于屏蔽外筒的半导体探测器，用于对经过一级倍增放大的二次电子施加第三电压和偏置电压以将二次电子进行二级倍增放大后转换为电流信号；A semiconductor detector fixed to the shielding outer cylinder is used to apply a third voltage and a bias voltage to the secondary electrons that have undergone primary multiplication and amplification to convert the secondary electrons into current signals after secondary multiplication and amplification;
与半导体探测器连接的放大器电路，用于将电流信号转换为电压信号；an amplifier circuit connected to the semiconductor detector and used for converting the current signal into a voltage signal;
信号放大处理电路，用于将电压信号进行放大后转换为图像信号。The signal amplification processing circuit is used to amplify the voltage signal and convert it into an image signal.
在其中一种实施例中，还包括：In one embodiment, it also includes:
固定于法拉第笼的第一聚焦透镜，用于对二次电子进行聚焦。The first focusing lens fixed to the Faraday cage is used to focus the secondary electrons.
在其中一种实施例中，还包括：In one embodiment, it also includes:
绝缘环，第一聚焦透镜通过绝缘环与屏蔽外筒固定。An insulating ring, wherein the first focusing lens is fixed to the shielding outer cylinder through the insulating ring.
在其中一种实施例中，还包括：In one embodiment, it also includes:
绝缘筒，电子倍增器、半导体探测器和绝缘环均通过绝缘筒固定于屏蔽外筒。The insulating cylinder, the electron multiplier, the semiconductor detector and the insulating ring are all fixed to the shielding outer cylinder through the insulating cylinder.
在其中一种实施例中，还包括：In one embodiment, it also includes:
固定于绝缘筒的第二聚焦透镜，用于对经过一级倍增放大的二次电子进行聚焦，将聚焦后的二次电子送入半导体探测器。The second focusing lens fixed to the insulating tube is used to focus the secondary electrons that have been amplified by the first stage of multiplication and send the focused secondary electrons into the semiconductor detector.
在其中一种实施例中，还包括：In one embodiment, it also includes:
用于将电压信号传递给信号放大处理电路的真空连接器，信号放大处理电路通过真空连接器连接放大器电路。A vacuum connector is used to transmit a voltage signal to a signal amplification processing circuit, and the signal amplification processing circuit is connected to the amplifier circuit through the vacuum connector.
在其中一种实施例中，还包括：In one embodiment, it also includes:
真空密封法兰，真空连接器通过真空密封法兰固定于屏蔽外筒。Vacuum sealing flange, the vacuum connector is fixed to the shielding outer cylinder through the vacuum sealing flange.
在其中一种实施例中，电子倍增器为非连续打拿级电子倍增器、通道型电子倍增器或微通道板。In one embodiment, the electron multiplier is a discontinuous dynode electron multiplier, a channel electron multiplier or a microchannel plate.
在其中一种实施例中，第三电压大于第二电压，第二电压大于第一电压。In one embodiment, the third voltage is greater than the second voltage, and the second voltage is greater than the first voltage.
本发明实施例还提供一种电子探测系统，包括：An embodiment of the present invention further provides an electronic detection system, comprising:
如上所述的电子探测器；以及An electron detector as described above; and
物镜，用于聚焦电子束至样品以产生二次电子。Objective lens, used to focus the electron beam onto the sample to produce secondary electrons.
本发明实施例的电子探测器及电子探测系统包括收集二次电子的法拉第笼、对二次电子进行一级倍增放大的电子倍增器，向电子倍增器的输入端和输出端提供电压的供电环、将二次电子进行二级倍增放大后转换为电流信号的半导体探测器、将电流信号转换为电压信号的放大器电路和将电压信号放大后转换为图像信号的信号放大处理电路，可以提高电子探测效率，达到增强图像信噪比、提高采集速度和优化探测器结构的目的及优势。The electron detector and electron detection system of the embodiment of the present invention include a Faraday cage for collecting secondary electrons, an electron multiplier for performing a primary multiplication and amplification on the secondary electrons, a power supply ring for providing voltage to the input and output ends of the electron multiplier, a semiconductor detector for converting the secondary electrons into current signals after performing a secondary multiplication and amplification, an amplifier circuit for converting the current signal into a voltage signal, and a signal amplification and processing circuit for converting the voltage signal into an image signal after amplification. These can improve the efficiency of electron detection and achieve the purpose and advantage of enhancing the image signal-to-noise ratio, increasing the acquisition speed, and optimizing the detector structure.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
图1是本发明第一实施例中电子探测器的示意图；FIG1 is a schematic diagram of an electron detector in a first embodiment of the present invention;
图2是本发明第二实施例中电子探测器的示意图；FIG2 is a schematic diagram of an electron detector in a second embodiment of the present invention;
图3是本发明第三实施例中电子探测器的示意图；FIG3 is a schematic diagram of an electron detector in a third embodiment of the present invention;
图4是本发明实施例中非连续打拿级电子倍增器的示意图；FIG4 is a schematic diagram of a discontinuous dynode electron multiplier according to an embodiment of the present invention;
图5是本发明实施例中通道型电子倍增器的示意图；FIG5 is a schematic diagram of a channel-type electron multiplier according to an embodiment of the present invention;
图6是本发明实施例中无中心孔的微通道板的示意图；FIG6 is a schematic diagram of a microchannel plate without a central hole in an embodiment of the present invention;
图7是本发明实施例中有中心孔的微通道板的示意图；FIG7 is a schematic diagram of a microchannel plate having a central hole in an embodiment of the present invention;
图8是本发明实施例中电子探测系统的示意图。FIG. 8 is a schematic diagram of an electronic detection system according to an embodiment of the present invention.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
本领域技术人员知道，本发明的实施方式可以实现为一种系统、装置、设备、方法或计算机程序产品。因此，本公开可以具体实现为以下形式，即：完全的硬件、完全的软件(包括固件、驻留软件、微代码等)，或者硬件和软件结合的形式。Those skilled in the art will appreciate that the embodiments of the present invention may be implemented as a system, device, apparatus, method or computer program product. Therefore, the present disclosure may be implemented in the following forms, namely: complete hardware, complete software (including firmware, resident software, microcode, etc.), or a combination of hardware and software.
鉴于现有的E-T二次电子探测器的电子探测效率低，图像信噪比差，影响最终的成像质量，本发明实施例提供了一种电子探测器及电子探测系统，可以提高电子探测效率，达 到增强图像信噪比、提高采集速度和优化探测器结构的目的及优势。以下结合附图对本发明进行详细说明。In view of the low electron detection efficiency and poor image signal-to-noise ratio of the existing E-T secondary electron detector, which affects the final imaging quality, the embodiment of the present invention provides an electron detector and an electron detection system, which can improve the electron detection efficiency, achieve the purpose and advantage of enhancing the image signal-to-noise ratio, increasing the acquisition speed and optimizing the detector structure. The present invention is described in detail below in conjunction with the accompanying drawings.
图1是本发明第一实施例中电子探测器的示意图；图2是本发明第二实施例中电子探测器的示意图；图3是本发明第三实施例中电子探测器的示意图。如图1至图3所示，电子探测器包括：FIG1 is a schematic diagram of an electronic detector in a first embodiment of the present invention; FIG2 is a schematic diagram of an electronic detector in a second embodiment of the present invention; and FIG3 is a schematic diagram of an electronic detector in a third embodiment of the present invention. As shown in FIGS. 1 to 3, the electronic detector includes:
法拉第笼5，用于吸引、收集二次电子； Faraday cage 5, used to attract and collect secondary electrons;
固定于法拉第笼5的漏斗形第一聚焦透镜6，用于对二次电子进行聚焦。其中，第一聚焦透镜6可以与法拉第笼5焊接为整体，可以高效收集二次电子，使二次电子直接加速聚焦到电子倍增器件7的接收面，省去了光电倍增器的电子-光子-电子转换这一过程，并且器件结构上也省去了前端的玻璃及光导管部分，可以减少电子损失，具有更高的信噪比和探测效率。The funnel-shaped first focusing lens 6 fixed to the Faraday cage 5 is used to focus the secondary electrons. The first focusing lens 6 can be welded to the Faraday cage 5 as a whole, which can efficiently collect the secondary electrons, and accelerate and focus the secondary electrons directly to the receiving surface of the electron multiplier device 7, eliminating the electron-photon-electron conversion process of the photomultiplier, and the device structure also eliminates the front glass and light guide parts, which can reduce electron loss and have a higher signal-to-noise ratio and detection efficiency.
绝缘环13，与法拉第笼5焊接为整体的第一聚焦透镜6通过绝缘环13与屏蔽外筒17的前端固定。The insulating ring 13 and the first focusing lens 6 welded as a whole with the Faraday cage 5 are fixed to the front end of the shielding outer cylinder 17 through the insulating ring 13 .
固定于屏蔽外筒17的电子倍增器7，用于基于电子倍增器输入端14-1的第一正电压HV1和电子倍增器输出端14-2的第二正电压HV2对二次电子进行一级倍增放大，此过程属于电子-电子的直接放大，提高了量子转化效率和响应速度。The electron multiplier 7 fixed to the shielding outer tube 17 is used to perform a first-order multiplication amplification on secondary electrons based on the first positive voltage HV1 of the electron multiplier input terminal 14-1 and the second positive voltage HV2 of the electron multiplier output terminal 14-2. This process belongs to direct electron-electron amplification, which improves the quantum conversion efficiency and response speed.
分别与电子倍增器输入端14-1和电子倍增器输出端14-2连接的供电环14，用于向电子倍增器输入端14-1提供第一电压，向电子倍增器输出端14-2提供第二电压；其中，供电环焊接在电子倍增器7的内部以方便施加电压。The power supply ring 14, which is respectively connected to the electron multiplier input terminal 14-1 and the electron multiplier output terminal 14-2, is used to provide a first voltage to the electron multiplier input terminal 14-1 and a second voltage to the electron multiplier output terminal 14-2; wherein the power supply ring is welded inside the electron multiplier 7 to facilitate voltage application.
固定于屏蔽外筒17的掺杂型硅基半导体探测器16，与电子倍增器输出端间隔1mm，用于对经过一级倍增放大的二次电子施加第三电压HV3和偏置电压Vf以将二次电子进行二级倍增放大后转换为电流信号。The doped silicon-based semiconductor detector 16 fixed to the shielding outer tube 17 is 1 mm away from the output end of the electron multiplier and is used to apply a third voltage HV3 and a bias voltage Vf to the secondary electrons after the first-stage multiplication to convert the secondary electrons into current signals after the second-stage multiplication.
其中，第三正电压HV3为工作基准电压，第三电压HV3大于第二电压HV2，第二电压HV2大于第一电压HV1。例如，HV1＝500V至1000V，HV2＝HV1+(500至1000V)，HV3＝HV2+1000V。HV1、HV2和HV3均可根据收集电子的信号强度联动动态调节(例如通过调节HV2与HV1之间的电压差调整一级倍增的大小，通过调节HV3与HV2之间的电压差调整二级倍增的大小)，具有可调的增益效果，还可以根据待测样品情况实时优化电压，获取更高质量的图像信号。由此可见，本发明中的电子倍增器和半导体探测器的工作电压通常低于传统E-T探测器的10kV供电，降低了绝缘耐压与真空密封难度。Among them, the third positive voltage HV3 is the working reference voltage, the third voltage HV3 is greater than the second voltage HV2, and the second voltage HV2 is greater than the first voltage HV1. For example, HV1 = 500V to 1000V, HV2 = HV1 + (500 to 1000V), and HV3 = HV2 + 1000V. HV1, HV2, and HV3 can all be dynamically adjusted according to the signal strength of the collected electrons (for example, by adjusting the voltage difference between HV2 and HV1 to adjust the size of the first-order multiplication, and by adjusting the voltage difference between HV3 and HV2 to adjust the size of the second-order multiplication), with an adjustable gain effect, and can also optimize the voltage in real time according to the situation of the sample to be tested to obtain a higher quality image signal. It can be seen that the operating voltage of the electron multiplier and the semiconductor detector in the present invention is usually lower than the 10kV power supply of the traditional E-T detector, which reduces the insulation withstand voltage and vacuum sealing difficulty.
通过导线或线缆与半导体探测器16连接的放大器电路9，安装于屏蔽外筒17，用于将 电流信号转换为电压信号；An amplifier circuit 9 connected to a semiconductor detector 16 via a wire or cable, mounted on a shielded outer tube 17, is used to convert a current signal into a voltage signal;
信号放大处理电路12，用于将电压信号进行放大后转换为图像信号。The signal amplification processing circuit 12 is used to amplify the voltage signal and convert it into an image signal.
一实施例中，电子探测器还包括：In one embodiment, the electronic detector further comprises:
绝缘筒8，电子倍增器7、半导体探测器16和绝缘环13均通过绝缘筒8固定于屏蔽外筒17。The insulating tube 8 , the electron multiplier 7 , the semiconductor detector 16 and the insulating ring 13 are all fixed to the shielding outer tube 17 through the insulating tube 8 .
固定于绝缘筒8的第二聚焦透镜15，用于对经过一级倍增放大的二次电子进行聚焦，将聚焦后的二次电子送入半导体探测器16。第二聚焦透镜15为环形聚焦透镜，可以令聚焦后的二次电子继续加速撞击到掺杂型硅基半导体探测器16的接收面。The second focusing lens 15 fixed to the insulating tube 8 is used to focus the secondary electrons after the first-stage multiplication and amplification, and send the focused secondary electrons to the semiconductor detector 16. The second focusing lens 15 is an annular focusing lens, which can accelerate the focused secondary electrons to continue to collide with the receiving surface of the doped silicon-based semiconductor detector 16.
用于将电压信号传递给信号放大处理电路12的真空连接器11，信号放大处理电路12安装于真空连接器11上，通过真空连接器11连接放大器电路9。The vacuum connector 11 is used to transmit the voltage signal to the signal amplification processing circuit 12 . The signal amplification processing circuit 12 is installed on the vacuum connector 11 and is connected to the amplifier circuit 9 via the vacuum connector 11 .
真空密封法兰10，真空连接器11通过真空密封法兰10固定于屏蔽外筒17。本发明的电子探测器可以作为探测器模块，通过真空连接器11整体安装于扫描电子显微镜设备对应接口。The vacuum sealing flange 10 and the vacuum connector 11 are fixed to the shielding outer cylinder 17 through the vacuum sealing flange 10. The electronic detector of the present invention can be used as a detector module and integrally installed on the corresponding interface of the scanning electron microscope equipment through the vacuum connector 11.
图1中的电子倍增器为非连续打拿级电子倍增器，图2中的电子倍增器为通道型电子倍增器，图3中的电子倍增器为微通道板。如图1-图3所示，电子倍增器可以采用带有电子发射涂层的自研器件、非连续打拿级电子倍增器、通道型电子倍增器(CEM，channel electron multiplier，连续打拿级倍增器)或微通道板。The electron multiplier in FIG1 is a discontinuous dynode electron multiplier, the electron multiplier in FIG2 is a channel electron multiplier, and the electron multiplier in FIG3 is a microchannel plate. As shown in FIG1 to FIG3, the electron multiplier can be a self-developed device with an electron emission coating, a discontinuous dynode electron multiplier, a channel electron multiplier (CEM, channel electron multiplier, continuous dynode multiplier) or a microchannel plate.
图4是本发明实施例中非连续打拿级电子倍增器的示意图。如图1和图4所示，非连续打拿级电子倍增器有多个倍增级的结构，可以通过供电环14向第一个电子倍增极上施加正电压HV1，向最后一个电子倍增极上施加正电压HV2。Fig. 4 is a schematic diagram of a discontinuous dynode electron multiplier in an embodiment of the present invention. As shown in Fig. 1 and Fig. 4, the discontinuous dynode electron multiplier has a structure of multiple multiplication stages, and a positive voltage HV1 can be applied to the first electron multiplier electrode and a positive voltage HV2 can be applied to the last electron multiplier electrode through a power supply ring 14.
图5是本发明实施例中通道型电子倍增器的示意图。如图2和图5所示，通道型电子倍增器为连续倍增级结构，可以通过供电环14向电子倍增器输入端施加正电压HV1，向电子倍增器输出端施加正电压HV2。Fig. 5 is a schematic diagram of a channel type electron multiplier in an embodiment of the present invention. As shown in Fig. 2 and Fig. 5, the channel type electron multiplier is a continuous multiplication stage structure, and a positive voltage HV1 can be applied to the input end of the electron multiplier through a power supply ring 14, and a positive voltage HV2 can be applied to the output end of the electron multiplier.
图6是本发明实施例中无中心孔的微通道板的示意图。图7是本发明实施例中有中心孔的微通道板的示意图。如图3、图6和图7所示，微通道板(MCP，Microchannel Plate)为连续倍增级结构，可以通过供电环14向电子倍增器输入端施加正电压HV1，向电子倍增器输出端施加正电压HV2。FIG6 is a schematic diagram of a microchannel plate without a central hole in an embodiment of the present invention. FIG7 is a schematic diagram of a microchannel plate with a central hole in an embodiment of the present invention. As shown in FIG3, FIG6 and FIG7, the microchannel plate (MCP) is a continuous multiplication stage structure, and a positive voltage HV1 can be applied to the input end of the electron multiplier through the power supply ring 14, and a positive voltage HV2 can be applied to the output end of the electron multiplier.
基于同一发明构思，本发明实施例还提供了一种电子探测系统，由于该电子探测系统解决问题的原理与电子探测器相似，因此该系统的实施可以参见电子探测器的实施，重复之处不再赘述。Based on the same inventive concept, an embodiment of the present invention further provides an electronic detection system. Since the principle of solving the problem by the electronic detection system is similar to that of the electronic detector, the implementation of the system can refer to the implementation of the electronic detector, and the repeated parts will not be repeated.
图8是本发明实施例中电子探测系统的示意图。如图8所示，电子探测系统包括：FIG8 is a schematic diagram of an electronic detection system according to an embodiment of the present invention. As shown in FIG8 , the electronic detection system includes:
如上所述的电子探测器；以及An electron detector as described above; and
物镜1，用于聚焦电子束2至样品3以产生二次电子4。 Objective lens 1, used to focus electron beam 2 onto sample 3 to generate secondary electrons 4.
具体实施时，物镜1聚焦电子束2至样品3，电子束2溅射到样品3内部产生二次电子4。法拉第笼5吸引、收集二次电子，然后经漏斗形的第一聚焦透镜6使电子有效聚焦、直接加速撞击到电子倍增器7的接收面。电子倍增器7基于电子倍增器输入端14-1的第一正电压HV1和电子倍增器输出端14-2的第二正电压HV2对二次电子进行一级倍增放大，放大后的二次电子经环形的第二聚焦透镜15聚焦、继续加速撞击到掺杂型硅基半导体探测器16的接收面。半导体探测器16对电子进行第二级放大后转换为电流信号，电流信号经导线传递至放大器电路9进行电流电压转换，转换得到的电压信号经真空连接器11传递给信号放大处理电路12，信号放大处理电路12将电压信号进行放大后转换为优质的图像信号。In specific implementation, the objective lens 1 focuses the electron beam 2 to the sample 3, and the electron beam 2 sputters into the sample 3 to generate secondary electrons 4. The Faraday cage 5 attracts and collects the secondary electrons, and then the electrons are effectively focused and directly accelerated to hit the receiving surface of the electron multiplier 7 through the funnel-shaped first focusing lens 6. The electron multiplier 7 performs a first-stage multiplication and amplification on the secondary electrons based on the first positive voltage HV1 of the electron multiplier input terminal 14-1 and the second positive voltage HV2 of the electron multiplier output terminal 14-2. The amplified secondary electrons are focused by the annular second focusing lens 15 and continue to be accelerated to hit the receiving surface of the doped silicon-based semiconductor detector 16. The semiconductor detector 16 performs a second-stage amplification on the electrons and converts them into a current signal. The current signal is transmitted to the amplifier circuit 9 through a wire for current-voltage conversion. The converted voltage signal is transmitted to the signal amplification processing circuit 12 through the vacuum connector 11. The signal amplification processing circuit 12 amplifies the voltage signal and converts it into a high-quality image signal.
综上，本发明实施例的电子探测器及电子探测系统令电子倍增器与掺杂型硅基半导体探测器组合工作，通过第一级倍增令足够多的入射束流进入半导体探测器实现低电压信号的二级增益可调放大；同时半导体探测器具有的低结电容可以提高探测器的带宽，二者结合有效实现了低噪声、高带宽和宽束流范围的探测，更有效放大信号电子，从而提高电镜仪器的扫描速度、信息获取通量和图像的信噪比。In summary, the electron detector and electron detection system of the embodiment of the present invention enable the electron multiplier and the doped silicon-based semiconductor detector to work in combination, and through the first-stage multiplication, a sufficient amount of incident beam current enters the semiconductor detector to realize the secondary gain adjustable amplification of the low voltage signal; at the same time, the low junction capacitance of the semiconductor detector can improve the bandwidth of the detector. The combination of the two effectively realizes low-noise, high-bandwidth and wide beam range detection, and more effectively amplifies signal electrons, thereby improving the scanning speed of the electron microscope instrument, the information acquisition flux and the signal-to-noise ratio of the image.
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限定本发明的保护范围，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims (10)

  1. 一种电子探测器，其特征在于，包括：An electronic detector, characterized by comprising:
    法拉第笼，用于收集二次电子；Faraday cage, used to collect secondary electrons;
    固定于屏蔽外筒的电子倍增器，用于基于电子倍增器输入端的第一电压和电子倍增器输出端的第二电压对所述二次电子进行一级倍增放大；An electron multiplier fixed to the shielding outer cylinder is used to perform a first-order multiplication amplification on the secondary electrons based on a first voltage at an input end of the electron multiplier and a second voltage at an output end of the electron multiplier;
    分别与所述电子倍增器输入端和所述电子倍增器输出端连接的供电环，用于向所述电子倍增器输入端提供第一电压，向所述电子倍增器输出端提供第二电压；a power supply ring connected to the electron multiplier input terminal and the electron multiplier output terminal respectively, and used to provide a first voltage to the electron multiplier input terminal and a second voltage to the electron multiplier output terminal;
    固定于屏蔽外筒的半导体探测器，用于对经过一级倍增放大的二次电子施加第三电压和偏置电压以将所述二次电子进行二级倍增放大后转换为电流信号；A semiconductor detector fixed to the shielding outer cylinder is used to apply a third voltage and a bias voltage to the secondary electrons that have undergone primary multiplication and amplification to convert the secondary electrons into current signals after secondary multiplication and amplification;
    与所述半导体探测器连接的放大器电路，用于将所述电流信号转换为电压信号；an amplifier circuit connected to the semiconductor detector, used for converting the current signal into a voltage signal;
    信号放大处理电路，用于将所述电压信号进行放大后转换为图像信号。The signal amplification processing circuit is used to amplify the voltage signal and convert it into an image signal.
  2. 根据权利要求1所述的电子探测器，其特征在于，还包括：The electron detector according to claim 1, further comprising:
    固定于所述法拉第笼的第一聚焦透镜，用于对所述二次电子进行聚焦。A first focusing lens fixed to the Faraday cage is used to focus the secondary electrons.
  3. 根据权利要求2所述的电子探测器，其特征在于，还包括：The electron detector according to claim 2, further comprising:
    绝缘环，所述第一聚焦透镜通过所述绝缘环与所述屏蔽外筒固定。An insulating ring, through which the first focusing lens is fixed to the shielding outer cylinder.
  4. 根据权利要求3所述的电子探测器，其特征在于，还包括：The electron detector according to claim 3, further comprising:
    绝缘筒，所述电子倍增器、所述半导体探测器和所述绝缘环均通过所述绝缘筒固定于所述屏蔽外筒。An insulating cylinder, through which the electron multiplier, the semiconductor detector and the insulating ring are fixed to the shielding outer cylinder.
  5. 根据权利要求4所述的电子探测器，其特征在于，还包括：The electron detector according to claim 4, further comprising:
    固定于所述绝缘筒的第二聚焦透镜，用于对经过一级倍增放大的二次电子进行聚焦，将聚焦后的二次电子送入所述半导体探测器。The second focusing lens fixed to the insulating tube is used to focus the secondary electrons that have been amplified by the first stage of multiplication, and send the focused secondary electrons into the semiconductor detector.
  6. 根据权利要求1所述的电子探测器，其特征在于，还包括：The electron detector according to claim 1, further comprising:
    用于将所述电压信号传递给所述信号放大处理电路的真空连接器，所述信号放大处理电路通过真空连接器连接所述放大器电路。A vacuum connector is used to transmit the voltage signal to the signal amplification processing circuit, and the signal amplification processing circuit is connected to the amplifier circuit through the vacuum connector.
  7. 根据权利要求6所述的电子探测器，其特征在于，还包括：The electron detector according to claim 6, further comprising:
    真空密封法兰，所述真空连接器通过所述真空密封法兰固定于所述屏蔽外筒。A vacuum sealing flange, wherein the vacuum connector is fixed to the shielding outer cylinder through the vacuum sealing flange.
  8. 根据权利要求1所述的电子探测器，其特征在于，The electron detector according to claim 1, characterized in that
    所述电子倍增器为非连续打拿级电子倍增器、通道型电子倍增器或微通道板。The electron multiplier is a discontinuous dynode electron multiplier, a channel type electron multiplier or a microchannel plate.
  9. 根据权利要求1所述的电子探测器，其特征在于，The electron detector according to claim 1, characterized in that
    所述第三电压大于所述第二电压，所述第二电压大于所述第一电压。The third voltage is greater than the second voltage, and the second voltage is greater than the first voltage.
  10. 一种电子探测系统，其特征在于，包括：An electronic detection system, characterized in that it comprises:
    权利要求1-9任一权利要求所述的电子探测器；以及The electron detector according to any one of claims 1 to 9; and
    物镜，用于聚焦电子束至样品以产生二次电子。Objective lens, used to focus the electron beam onto the sample to produce secondary electrons.
PCT/CN2022/136693 2022-09-30 2022-12-05 Electron detector and electron detection system WO2024066034A1 (en)

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Citations (5)

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DE4002531A1 (en) * 1990-01-29 1991-08-01 Brust Hans Detlef Rapid spectral analysis of recurring signal - by detecting, modulation and mixing of sec. signal caused by exposing integrated circuit to prim. beam
JP2001084946A (en) * 1999-09-17 2001-03-30 Hitachi Ltd Method for evaluating secondary particle detector system and particle beam device
US20020175283A1 (en) * 2001-05-24 2002-11-28 Etec Systems, Inc. Tandem microchannel plate and solid state electron detector
CN107112182A (en) * 2014-10-22 2017-08-29 科学明天有限责任公司 Quantitative secondary electron detection
CN115394622A (en) * 2022-09-30 2022-11-25 纳克微束(北京)有限公司 Electronic detector and electronic detection system

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DE4002531A1 (en) * 1990-01-29 1991-08-01 Brust Hans Detlef Rapid spectral analysis of recurring signal - by detecting, modulation and mixing of sec. signal caused by exposing integrated circuit to prim. beam
JP2001084946A (en) * 1999-09-17 2001-03-30 Hitachi Ltd Method for evaluating secondary particle detector system and particle beam device
US20020175283A1 (en) * 2001-05-24 2002-11-28 Etec Systems, Inc. Tandem microchannel plate and solid state electron detector
CN107112182A (en) * 2014-10-22 2017-08-29 科学明天有限责任公司 Quantitative secondary electron detection
CN115394622A (en) * 2022-09-30 2022-11-25 纳克微束(北京)有限公司 Electronic detector and electronic detection system

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