WO2024060469A1 - Flip-flop circuit and electronic device - Google Patents

Flip-flop circuit and electronic device Download PDF

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Publication number
WO2024060469A1
WO2024060469A1 PCT/CN2023/070546 CN2023070546W WO2024060469A1 WO 2024060469 A1 WO2024060469 A1 WO 2024060469A1 CN 2023070546 W CN2023070546 W CN 2023070546W WO 2024060469 A1 WO2024060469 A1 WO 2024060469A1
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node
type transistor
signal
circuit
flip
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PCT/CN2023/070546
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French (fr)
Chinese (zh)
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周润发
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长鑫存储技术有限公司
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Publication of WO2024060469A1 publication Critical patent/WO2024060469A1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01Details
    • H03K3/017Adjustment of width or dutycycle of pulses
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits

Definitions

  • the present disclosure relates to the field of integrated circuit technology, and in particular, to a flip-flop circuit capable of correcting signal duty cycle deviation problems and electronic equipment applying the flip-flop circuit.
  • NBTI Negative Bias Temperature Instability
  • NBTI mainly refers to the instability caused by device parameters (such as turn-on voltage Vt, transconductance Gm, drain current Id) drifting over time when PMOS is in the inversion working state.
  • the main reason is the degradation of PMOS during the static stress process. If PMOS does not receive effective recovery time after long-term stress, it will lead to signal waveform deformation, timing drift (including duty cycle changes) in the logic circuit, and even potential circuit failure.
  • the purpose of the present disclosure is to provide a flip-flop circuit and electronic device for overcoming, at least to a certain extent, the problem of PMOS causing output signal waveform changes after long-term use.
  • a flip-flop circuit including a plurality of signal inverting elements.
  • the substrate of a P-type transistor of each signal inverting element is connected to a bias voltage providing circuit.
  • the voltage providing circuit is used to respond to the input signal of the corresponding signal inverting element, and when the P-type transistor in the signal inverting element is turned on, provide a first substrate bias voltage to the P-type transistor.
  • a second substrate bias voltage is provided to the P-type transistor, and the first substrate bias voltage is smaller than the second substrate bias voltage and Greater than the PN junction conduction voltage, the signal inverting element is used to invert the input signal.
  • each of the bias supply circuits includes: a first switching element, a first end connected to the first substrate bias, and a second end connected to the bias.
  • the control terminal is connected to the gate of the P-type transistor in the signal inverting element corresponding to the bias providing circuit; the second switching element, the first The second terminal is connected to the second substrate bias, the second terminal is connected to the second terminal of the first switching element, and the control terminal is connected to the drain of the P-type transistor of the signal inverting element corresponding to the bias providing circuit.
  • the flip-flop circuit includes: a first inverter, the input terminal is the input terminal of the flip-flop circuit, the output terminal is connected to a first node, and the first inverter
  • the substrate of the P-type transistor in the phase device is connected to a first bias supply circuit, and the first inverter is one of the plurality of signal inversion elements; the first transmission gate, the first control terminal is connected to the clock signal, The second control terminal is connected to the complementary clock signal, the input terminal is connected to the first node, and the output terminal is connected to the second node; the second inverter has the input terminal connected to the second node, and the output terminal is connected to the third node.
  • the substrate of the P-type transistor in the two inverters is connected to the second bias supply circuit, and the second inverter is one of the plurality of signal inverting elements; the second transmission gate, the first control terminal is connected to The complementary clock signal, the second control terminal is connected to the clock signal, the input terminal is connected to the third node, and the output terminal is connected to the fourth node; the third inverter, the input terminal is connected to the fourth node, and the output terminal is connected to the third node.
  • the substrate of the P-type transistor in the third inverter is connected to a third bias providing circuit, the third inverter is one of the plurality of signal inverting elements; the fourth inverter , the input end is connected to the fifth node, the output end is the first output end of the flip-flop circuit, the substrate of the P-type transistor in the fourth inverter is connected to the fourth bias supply circuit, and the third
  • the four inverters are one of the plurality of signal inverting elements;
  • the fifth inverter has an input terminal connected to the output terminal of the fourth inverter, and the output terminal is the second output terminal of the flip-flop circuit,
  • the substrate of the P-type transistor in the fifth inverter is connected to the third bias supply circuit, and the fifth inverter is one of the plurality of signal inversion elements.
  • it further includes: a first feedback circuit, with an input terminal connected to the third node and an output terminal connected to the second node, for converting the clock signal and the complementary clock signal to the first feedback circuit.
  • the potential of the third node is inverted and then fed back to the second node, and the first feedback circuit includes an odd number of the signal inverting elements.
  • the first feedback circuit includes: a first P-type transistor with a source connected to the power supply voltage and a gate connected to the third node; a second P-type transistor with a source connected to the power supply voltage.
  • the drain of the first P-type transistor is connected, the gate is connected to the clock signal, and the drain is connected to the second node; the source of the first N-type transistor is connected to ground, and the gate is connected to the third node; the second An N-type transistor has a source connected to the drain of the first N-type transistor, a gate connected to the complementary clock signal, and a drain connected to the second node.
  • the substrates of the first P-type transistor and the second P-type transistor are both connected to a fifth bias providing circuit.
  • the first feedback circuit includes an odd number of inverters connected in series and a first feedback transmission gate, and two control terminals of the first feedback transmission gate are respectively connected to the clock signal and the complementary clock signal.
  • it further includes: a second feedback circuit, the input end is connected to the fifth node, and the output end is connected to the fourth node, for converting the clock signal and the complementary clock signal according to the clock signal and the complementary clock signal.
  • the potential of the fifth node is inverted and then fed back to the fourth node, and the second feedback circuit includes an odd number of the signal inverting elements.
  • the second feedback circuit includes: a third P-type transistor with a source connected to the power supply voltage and a gate connected to the fifth node; a fourth P-type transistor with a source connected to the power supply voltage.
  • the drain of the third P-type transistor is connected, the gate is connected to the complementary clock signal, and the drain is connected to the fourth node; the source of the third N-type transistor is connected to ground, and the gate is connected to the fifth node;
  • Four N-type transistors the source is connected to the drain of the third N-type transistor, the gate is connected to the clock signal, and the drain is connected to the fourth node.
  • substrates of the third P-type transistor and the fourth P-type transistor are both connected to the fourth bias supply circuit.
  • the second feedback circuit includes an odd number of inverters and a second feedback transmission gate connected in series, and two control terminals of the second feedback transmission gate are respectively connected to the clock signal and the complementary clock signal.
  • it further includes: a reset circuit, the input end is used to receive a reset signal, the output end is connected to the fourth node, and is used to output to the fourth node in response to the reset signal. reset level.
  • the reset level is a low level
  • the reset circuit includes a first reset transistor, the first reset transistor is an N-type transistor, and the first reset transistor The source electrode is connected to ground, the drain electrode is connected to the fourth node, and the gate electrode is used to connect the first reset signal.
  • the reset level is a high level
  • the reset circuit includes a second reset transistor, the second reset transistor is a P-type transistor, and the second reset transistor
  • the source electrode is connected to the power supply voltage
  • the drain electrode is connected to the fourth node
  • the gate electrode is used to connect the second reset signal.
  • an electronic device including the flip-flop circuit as described in any one of the above.
  • Embodiments of the present disclosure can effectively overcome the NBTI effect of the P-type transistor caused by increased stress time and insufficient recovery time by increasing the substrate bias of the P-type transistor when the P-type transistor is turned on, and correct the signal distortion caused by the NBTI effect. .
  • FIG. 1 is a schematic diagram of a flip-flop circuit in an embodiment of the present disclosure.
  • FIG. 2 is a schematic diagram of a bias voltage providing circuit in an embodiment of the present disclosure.
  • FIG. 3 is a schematic structural diagram of a flip-flop circuit in an embodiment of the present disclosure.
  • FIG. 4 is a timing diagram of the circuit shown in FIG. 3 .
  • Figures 5A and 5B are timing diagrams of the flip-flop circuit before and after the improvement respectively.
  • Figure 6 is a schematic structural diagram of a first feedback circuit in an embodiment of the present disclosure.
  • Figure 7 is a schematic structural diagram of a second feedback circuit in an embodiment of the present disclosure.
  • FIG. 8 is a schematic structural diagram of a reset circuit in an embodiment of the present disclosure.
  • Example embodiments will now be described more fully with reference to the accompanying drawings.
  • Example embodiments may, however, be embodied in various forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concepts of the example embodiments.
  • the described features, structures or characteristics may be combined in any suitable manner in one or more embodiments.
  • numerous specific details are provided to provide a thorough understanding of embodiments of the disclosure.
  • those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or more of the specific details described, or other methods, components, devices, steps, etc. may be adopted.
  • well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the disclosure.
  • FIG. 1 is a schematic diagram of a flip-flop circuit in an embodiment of the present disclosure.
  • the flip-flop circuit 100 includes a plurality of signal inverting elements 1.
  • the substrate of the P-type transistor of each signal inverting element 1 is connected to a bias providing circuit 2.
  • the bias providing circuit 2 is used to respond to the corresponding The input signal of the signal inverting element 1, when the P-type transistor in the signal inverting element is turned on, provides the first substrate bias V1 to the P-type transistor, and the P-type transistor in the signal inverting element is not turned on.
  • the second substrate bias V2 is provided to the P-type transistor.
  • the first substrate bias V1 is smaller than the second substrate bias V2 and larger than the PN junction turn-on voltage.
  • the signal inverting element 1 is used to invert the input signal Perform inversion.
  • the flip-flop circuit 100 may be a D flip-flop, for example.
  • Figure 1 shows a D flip-flop.
  • the D flip-flop is an information storage device with memory function and two stable states.
  • the two stable states of the D flip-flop are "0" and "1" respectively. Under the action of a certain external signal, it can flip from one stable state to another.
  • the D flip-flop is composed of multiple gate circuits.
  • the triggering methods are level triggering and edge triggering. The former can be triggered when CP (clock pulse) is equal to 1, and the latter can be triggered on the leading edge of CP (positive transition 0 ⁇ 1).
  • the D flip-flop in the embodiment of the present disclosure may be edge triggered or level triggered.
  • the flip-flop shown in Figure 1 is taken as an example for explanation.
  • the flip-flop can also be in other circuit forms, and the P-type transistor connected to the bias supply circuit can also be located in other Locations where NBTI effects may exist.
  • the transmission delay time t d of the P-type transistor conforms to the following formula:
  • V DD is the power circuit
  • I D is the drain current of the P-type transistor
  • W and L are the channel width and channel length of the P-type transistor respectively
  • ⁇ eff is the carrier mobility
  • VT is the P-type transistor.
  • C OX is the capacitance per unit area of the oxide layer between the gate and the substrate.
  • the carrier mobility ⁇ eff decreases and the threshold voltage VT drifts, causing the transmission delay time t d to increase and forming a timing drift (a change in the duty cycle).
  • the embodiment of the present disclosure connects the bias voltage providing circuit 2 to the substrate of the P-type transistor, and enables the bias voltage providing circuit 2 to increase when the corresponding P-type transistor is turned on (that is, the gate voltage of the P-type transistor is lower than the threshold voltage VT).
  • the substrate bias voltage output to the substrate of the P-type transistor can reduce the threshold voltage VT when the P-type transistor is turned on, correct the increase in the transmission delay time t d caused by the reduction of the carrier mobility ⁇ eff , and repair Timing drift.
  • FIG. 2 is a schematic diagram of a bias voltage providing circuit in an embodiment of the present disclosure.
  • each bias voltage providing circuit 2 includes:
  • the first switching element K1 has a first end connected to the first substrate bias V1, a second end connected to the substrate of the P-type transistor in the signal inverting element 1 corresponding to the bias providing circuit, and a control end connected to the corresponding bias providing circuit.
  • the second switching element K2 has a first end connected to the second substrate bias voltage V2, a second end connected to the second end of the first switching element, and a control end connected to the P-type transistor of the signal inverting element 1 corresponding to the bias supply circuit. drain.
  • an inverter is used as an example of the signal inversion element 1 .
  • the signal inversion element 1 can also be other elements with inversion functions, such as NOT gates and NANDs. Gate, NOR gate and other logic gate circuits.
  • both the first switching element K1 and the second switching element K2 are P-type transistors.
  • the signal inversion element 1 includes a P-type transistor MP and an N-type transistor MN, where the source voltage of the P-type transistor MP is connected to a power supply voltage equal to the second substrate bias voltage V2, that is, in one embodiment, the second substrate bias voltage Voltage V2 is equal to the supply voltage of flip-flop circuit 100.
  • the first switching element K1 When the input signal Vin of the signal inverting element 1 is low level, the first switching element K1 is turned on, the P-type transistor MP is turned on, the substrate bias of the P-type transistor MP is equal to the first substrate bias V1, and the N-type transistor MN is turned off, the output signal Vout of the signal inverting element 1 is equal to the high level, and the second switching element K2 is turned off.
  • the first switch element K1 When the input signal Vin of the signal inverting element 1 is at a high level, the first switch element K1 is turned off, the P-type transistor MP is turned off, the N-type transistor MN is turned on, the output signal Vout of the signal inverting element 1 is equal to a low level, the second switch element K2 is turned on, and the substrate bias of the P-type transistor MP is equal to the second substrate bias V2, that is, the power supply voltage connected to the source of the P-type transistor MP, so that the threshold voltage VT when the P-type transistor MP is turned on is negatively offset compared to when the P-type transistor MP is not turned on, and the drain current increases, thereby reducing the transmission delay time td .
  • FIG. 3 is a schematic structural diagram of a flip-flop circuit in an embodiment of the present disclosure.
  • flip-flop circuit 300 may include:
  • the input terminal of the first inverter OP1 is the input terminal of the flip-flop circuit, and the output terminal is connected to the first node N1.
  • the substrate of the P-type transistor in the first inverter OP1 is connected to the first bias supply circuit 31.
  • the inverter OP1 is one of multiple signal inverting components;
  • the first transmission gate TG1 has a first control terminal connected to the clock signal CLK, a second control terminal connected to the complementary clock signal CLKB, an input terminal connected to the first node N1, and an output terminal connected to the second node N2;
  • the input terminal of the second inverter OP2 is connected to the second node N2, and the output terminal is connected to the third node N3.
  • the substrate of the P-type transistor in the second inverter OP2 is connected to the second bias supply circuit 32, and the second inverter OP2 is connected to the third node N3.
  • OP2 is one of multiple signal inverting components;
  • the first control terminal is connected to the complementary clock signal CLKB, the second control terminal is connected to the clock signal CLK, the input terminal is connected to the third node N3, and the output terminal is connected to the fourth node N4;
  • a third inverter OP3 the input end of which is connected to the fourth node N4, the output end of which is connected to the fifth node N5, the substrate of the P-type transistor in the third inverter OP3 is connected to the third bias supply circuit 33, and the third inverter OP3 is one of the plurality of signal inverting elements;
  • the input terminal of the fourth inverter OP4 is connected to the fifth node N5, and the output terminal is the first output terminal Q of the flip-flop circuit.
  • the substrate of the P-type transistor in the fourth inverter OP4 is connected to the fourth bias supply circuit 34 , the fourth inverter OP4 is one of multiple signal inverting elements;
  • the input terminal of the fifth inverter OP5 is connected to the output terminal of the fourth inverter OP4, the output terminal is the second output terminal QB of the flip-flop circuit, and the substrate of the P-type transistor in the fifth inverter OP5 is connected to the third In the bias voltage providing circuit 33, the fifth inverter OP5 is one of a plurality of signal inverting elements.
  • the level states of the complementary clock signal CLKB and the clock signal CLK are completely opposite.
  • the structure and working principle of the bias providing circuit corresponding to each inverter are the same as those of the bias providing circuit in the embodiment shown in FIG. 2 .
  • the output node of the first bias providing circuit 31 is A1
  • the output node of the second bias providing circuit 32 is A2
  • the output node of the third bias providing circuit 33 is A3
  • the output node of the fourth bias providing circuit 34 is A4.
  • the substrate of the P-type transistor of the fifth inverter OP5 is connected to the output node A3 of the third bias supply circuit 33 .
  • the first transmission gate TG1 is used to control the output signal of the first inverter OP1 to be transmitted from the first node N1 to the second node N2 when the clock signal CLK is high level; the transmission gate TG2 is used to control the output signal of the first inverter OP1 from the first node N1 to the second node N2 when the clock signal CLK is low level. Normally, the output signal controlling the second inverter OP2 is transmitted from the third node N3 to the fourth node N4.
  • the structure of the first transmission gate TG1 can be seen in the example of the dotted line box on the left side of Figure 3 .
  • the first transmission gate TG1 can be composed of a P-type transistor MPTG and an N-type transistor MNTG.
  • the first end of the P-type transistor MPTG is connected to the first node N1, and the second end is connected to the second node N2.
  • the gate is connected to the complementary clock signal CLKB;
  • the first terminal of the N-type transistor MNTG is connected to the first node N1, the second terminal is connected to the second node N2, and the gate is connected to the clock signal CLK.
  • the N-type transistor MNTG When the clock signal CLK is at a low level and the complementary clock signal CLKB is at a high level, the N-type transistor MNTG is turned off, the P-type transistor MPTG is turned off, and the first transmission gate TG1 is turned off; when the clock signal CLK is at a high level and the complementary clock signal When the clock signal CLKB is low level, the N-type transistor MNTG is turned on, the P-type transistor MPTG is turned on, and the first transmission gate TG1 transmits the signal of the first node N1 to the second node N2.
  • the structure of the second transmission gate TG2 may be the same as that of the first transmission gate TG1. Only the gate of the P-type transistor is connected to the clock signal CLK, and the gate of the N-type transistor is connected to the complementary clock signal CLKB, so that the second transmission gate TG2 only It is turned on when the clock signal CLK is low level and the complementary clock signal CLKB is high level, and the signal of the third node N3 is transmitted to the fourth node N4.
  • the first transmission gate TG1 and the second transmission gate TG2 are used to control the timing of signals transmitted within the flip-flop circuit. Below, the signal timing of each node will be explained by taking the circuit shown in Figure 3 as an example.
  • Figure 4 is a timing diagram of the circuit shown in Figure 3.
  • the clock signal CLK is a periodic signal with alternating high and low levels.
  • the input signal D of the flip-flop circuit has a rising edge at the first moment T1 and changes from low level to high level.
  • the output node A1 of the first bias supply circuit 31 provides the second substrate bias V2.
  • the first inverter OP1 outputs the inverted signal of D, that is, low level, to the first node N1.
  • the clock signal CLK is high level, and the first transmission gate TG1 is turned on, turning on the first node N1.
  • the signal at the node N1 is transmitted to the second node N2, the P-type transistor in the second inverter OP2 is turned on, and the second bias supply circuit 32 provides the P-type transistor in the second inverter OP2 with the output node A2.
  • the second inverter OP2 outputs a complete rising edge to the third node N3.
  • the second transmission gate TG2 Since the clock signal CLK is high level at the first time T1, the second transmission gate TG2 is not conductive until the second time T2, the clock signal CLK is converted to a low level, the second transmission gate TG2 is conductive, and the third transmission gate TG2 is turned on.
  • the high level of node N3 is transmitted to the fourth node N4, the output terminal of the third inverter OP3 outputs a low level to the fifth node N5, and the output node A3 of the third bias supply circuit 33 provides a higher second offset voltage.
  • Bottom bias voltage V2, the output node A4 of the fourth bias voltage providing circuit 34 provides a lower first substrate bias voltage V1.
  • the input signal D of the flip-flop circuit changes from high level to low level
  • the first inverter OP1 outputs a high level to the first node N1, and the output node A1 of the first bias providing circuit 31 Output a lower first substrate bias voltage V1;
  • the clock signal CLK is high level
  • the first transmission gate TG1 is turned on
  • the signal of the first node N1 is transmitted to the second node N2, and the second inverter OP2
  • the third node N3 outputs a low level
  • the output node A2 of the second bias voltage providing circuit 32 outputs a higher second substrate bias voltage V2.
  • the second transmission gate TG2 Since the clock signal CLK is at a high level at the third time T3, the second transmission gate TG2 is turned off, and the fourth node N4 remains at a high level.
  • the clock signal CLK switches to low level, and the second transmission gate TG2 is turned on, transmitting the low level of the third node N3 to the fourth node N4, and then transmits the low level of the third node N3 to the fourth node N4 through the third inverter OP3.
  • the node N5 outputs a high level.
  • the third bias voltage providing circuit 33 outputs a lower first substrate bias voltage V1 through the output node A3, and the fourth bias voltage providing circuit 34 outputs a lower second substrate bias voltage V1 through the output node A4.
  • the first transmission gate TG1 is turned off, and the low level of the first node N1 remains until the sixth time T6.
  • the signal CLK is transmitted from the first node N1 to the second node N2 only when it is high level.
  • the second inverter OP2 inverts the signal of the second node N2 and then outputs a high level to the third node N3, the second transmission gate TG2 is turned off until the clock signal CLK of the seventh moment T7 switches to a low level.
  • the second transmission gate TG2 is turned on and transmits the high level of the third node N3 to the fourth node N4, causing the third inverter OP3 to present a low level signal to the fifth node N5.
  • the input signal D appears with a falling edge, the clock signal CLK is low level, and the first transmission gate TG1 is turned off. Therefore, the high level of the first node N1 is not transmitted to the second node N2 until the clock signal CLK is high level at the ninth time T9 and the first transmission gate TG1 is turned on.
  • the clock signal CLK appears with a falling edge, and the second transmission gate TG2 is turned on, transmitting the signal of the third node N3 to the fourth node N4, causing the third inverter OP3 to present a high level to the fifth node N5. Signal.
  • the duration of the output signal of the flip-flop circuit is controlled to be an integer multiple of the period of the clock signal CLK.
  • Figures 5A and 5B are timing diagrams of the flip-flop circuit before and after the improvement respectively.
  • the output terminal of the first inverter OP1 outputs the inverse of the input signal D.
  • the first transmission gate TG1 is turned on, the second node N2 appears low level, and the third node N3, as the output node of the second inverter OP2, is affected by the NBTI effect of the P-type transistor in the second inverter OP2 and appears rising.
  • the second transmission gate TG2 is turned off.
  • the clock signal CLK has a falling edge
  • the second transmission gate TG2 is turned on, and the high-level signal of the third node N3 is transmitted to the fourth node N4, causing the third inverter OP3 to output to the fifth node N5. low level.
  • the P-type transistor in the first inverter OP1 is turned on. Affected by the NBTI effect, the transmission delay time of the P-type transistor increases, resulting in the The signal output from the inverter OP1 to the second node N2 is deformed. At this time, the clock signal CLK is at a high level, and the first transmission gate TG1 is turned on. However, because the signal at the second node N2 is deformed and the rising amplitude is small, the rising edge cannot be transmitted to the second node N2.
  • each inverter reduces the substrate bias of the P-type transistor at the rising edge of the output signal, the output delay time of the rising edge of the signal (i.e., signal deformation) is reduced.
  • the signal of the first node N1 can be transmitted to the second node N2 while the first transmission gate TG1 is turned on, and the signal shape and timing of subsequent nodes have also been repaired.
  • embodiments of the present disclosure can repair the rising edge deformation of the output signal of each signal inverting element caused by the NBTI effect by reducing the substrate bias of the P-type transistor when the P-type transistor of the signal inverting element is turned on. The signal timing is then effectively repaired.
  • the flip-flop circuit may further include a first feedback circuit FB1, the input end of the first feedback circuit FB1 is connected to the third node N3, and the output end is connected to the second node N2,
  • the first feedback circuit FB1 is used to invert the potential of the third node N3 and then feed it back to the second node N2 according to the clock signal CLK and the complementary clock signal CLKB.
  • the first feedback circuit FB1 includes an odd number of signal inverting elements.
  • FIG. 6 is a schematic diagram of the structure of a first feedback circuit in an embodiment of the present disclosure.
  • the first feedback circuit FB1 may include:
  • the source of the first P-type transistor MP1 is connected to the power supply voltage VDD, and the gate is connected to the third node N3;
  • the source of the second P-type transistor MP2 is connected to the drain of the first P-type transistor MP1, the gate is connected to the clock signal CLK, and the drain is connected to the second node N2;
  • the first N-type transistor MN1 has its source connected to ground and its gate connected to the third node N3;
  • the source of the second N-type transistor MN2 is connected to the drain of the first N-type transistor MN1, the gate is connected to the complementary clock signal CLKB, and the drain is connected to the second node N2.
  • both the second P-type transistor MP2 and the second N-type transistor MN2 are turned off, and the first feedback circuit FB1 does not Work.
  • the first feedback circuit FB1 conducts the signal according to the signal of the third node N3.
  • the second node N2 outputs a signal.
  • the first feedback circuit FB1 can only output a feedback signal to the second node N2 when the clock signal CLK is low level, thereby adjusting the signal of the third node N3 to be aligned with the falling edge of the clock signal CLK, and adjusting the signal of the third node N3 Timing is aligned with the clock signal.
  • the clock signal CLK transitions from high level to low level (that is, a falling edge occurs)
  • the voltage of the second node N2 is high level and is inverted through the second inverter OP2
  • the voltage of the third node N3 The voltage is low level.
  • the first P-type transistor MP1 is turned on, the first N-type transistor MN1 is turned off, and the first feedback circuit FB1 outputs a high level to the second node N2.
  • the high level is consistent with the clock signal CLK. Falling edge alignment; if the voltage of the second node N2 is low level, it is inverted through the second inverter OP2, and the voltage of the third node N3 is high level.
  • the first P-type transistor MP1 is turned off, and the first The N-type transistor MN1 is turned on, and the first feedback circuit FB1 outputs a low level to the second node N2, and the low level is aligned with the falling edge of the clock signal CLK.
  • the substrates of the first P-type transistor MP1 and the second P-type transistor MP2 can be A fifth bias supply circuit (not shown) is connected.
  • the fifth bias supply circuit is used to provide the first substrate bias V1 to the first P-type transistor MP1 and the second P-type transistor MP2 when the first P-type transistor MP1 and the second P-type transistor MP2 are turned on.
  • the second substrate bias V2 is provided to the first P-type transistor MP1 and the second P-type transistor MP2.
  • the second substrate bias voltage V2 is equal to the power supply voltage VDD, for example.
  • the first feedback circuit FB1 may also be implemented by an odd number of inverters connected in series and a first feedback transmission gate (not shown), wherein two control terminals of the first feedback transmission gate are respectively connected to the clock signal CLK and the complementary clock signal CLKB to implement the same control logic as the embodiment shown in FIG4 , i.e., when the clock signal CLK is at a high level, the first feedback circuit FB1 does not output a signal to the second node N2; when the clock signal CLK is at a low level, the first feedback circuit FB1 outputs an inverted signal of the third node N3 to the second node N2, thereby adjusting the signal timing of the second node N2 and the third node N3 to be aligned with the falling edge of the clock signal CLK.
  • the flip-flop circuit may also provide a second feedback circuit FB2 between the fourth node N4 and the fifth node N5 to further adjust the timing within the flip-flop circuit.
  • the input end of the second feedback circuit FB2 is connected to the fifth node N5, and the output end is connected to the fourth node N4. It is used to invert the potential of the fifth node N5 and then feed it back to the fourth node N4 according to the clock signal CLK and the complementary clock signal CLKB.
  • the second feedback circuit FB2 includes an odd number of signal inverting elements.
  • first feedback circuit FB1 and the second feedback circuit FB2 can be provided separately or jointly, and the present disclosure does not place special restrictions on this.
  • Figure 7 is a schematic structural diagram of a second feedback circuit in an embodiment of the present disclosure.
  • the second feedback circuit FB2 may include:
  • the source of the third P-type transistor MP3 is connected to the power supply voltage VDD, and the gate is connected to the fifth node N5;
  • the source of the fourth P-type transistor MP4 is connected to the drain of the third P-type transistor MP3, the gate is connected to the complementary clock signal CLKB, and the drain is connected to the fourth node N4;
  • the third N-type transistor MN3 has its source connected to ground and its gate connected to the fifth node N5;
  • the source of the fourth N-type transistor MN4 is connected to the drain of the third N-type transistor MN3, the gate is connected to the clock signal CLK, and the drain is connected to the fourth node N4.
  • the structure and principle of the second feedback circuit FB2 are similar to the first feedback circuit FB1, and is used to transmit the inverted signal of the signal of the fifth node N5 to the fourth node when the clock signal CLK is low level and the complementary clock signal CLKB is high level. Node N4 will not be described again here.
  • the fourth bias supply circuit 34 is connected to the substrates of the third P-type transistor MP3 and the fourth P-type transistor MP4. Since the control signal of the first substrate bias V1 in the fourth bias supply circuit 34 is the signal of the fifth node N5, and the control signal of the second substrate bias V2 is the inverse signal of the signal of the fifth node N5, It can be realized that when the signal of the fifth node N5 is low level and the third P-type transistor MP3 is turned on, the first substrate bias V1 is input to the third P-type transistor MP3 and the fourth P-type transistor MP4.
  • the second substrate bias V2 is input to the third P-type transistor MP3 and the fourth P-type transistor MP4 to correct the output of the second feedback circuit FB2
  • the signal is deformed due to the NBTI effect.
  • the second feedback circuit FB2 can also be composed of an odd number of inverters and a second feedback transmission gate connected in series.
  • the two control terminals of the second feedback transmission gate FB2 are connected to the clock signal CLK and the complementary clock respectively.
  • the signal CLKB is used to control the operation of the second feedback circuit FB2 when the clock signal CLK is at a low level and the complementary clock signal CLKB is at a high level.
  • the signal transmission speed between nodes can be accelerated through the clock signal CLK, and charging and discharging conflicts with the main circuit signal can be avoided.
  • the flip-flop circuit may include a reset circuit RST, the input terminal is used to receive the reset signal, and the output terminal is connected to the fourth node N4, and is used to output a reset level to the fourth node N4 in response to the reset signal.
  • FIG. 8 is a schematic structural diagram of a reset circuit in an embodiment of the present disclosure.
  • the reset circuit 81 may include a first reset transistor MNS and a second reset transistor MPS.
  • the first reset transistor MNS and the second reset transistor MPS are selectively set according to the reset level, that is, the first reset transistor MNS and the second reset transistor MPS. It is sufficient to set only one transistor MPS.
  • the reset circuit 81 may include a first reset transistor MNS.
  • the first reset transistor MNS is an N-type transistor.
  • the source of the first reset transistor MNS is grounded, the drain is connected to the fourth node N4, and the gate is connected to the ground. It is used to connect the first reset signal RST1, and the effective level of the first reset signal RST1 is high level.
  • the reset circuit 81 may include a second reset transistor MPS.
  • the second reset transistor MPS is a P-type transistor.
  • the source of the second reset transistor MPS is connected to the power supply voltage VDD, and the drain is connected to the fourth node N4.
  • the gate is used to connect the second reset signal RST2, and the effective level of the second reset signal RST2 is low level.
  • the reset circuit 81 and the first feedback circuit FB1 and the second feedback circuit FB2 can be set selectively or at the same time, and the present disclosure does not place special restrictions on this.
  • an electronic device comprising a trigger circuit as shown in any of the above embodiments.
  • Embodiments of the present disclosure can effectively overcome the NBTI effect of the P-type transistor caused by increased stress time and insufficient recovery time by increasing the substrate bias of the P-type transistor when the P-type transistor is turned on, and correct the signal distortion caused by the NBTI effect. .

Abstract

A flip-flop circuit (100) and an electronic device. The flip-flop circuit (100) comprises a plurality of signal inverting elements (1), wherein a substrate of a P-type transistor (MP) of each signal inverting element (1) is correspondingly connected to a bias voltage providing circuit (2). The bias voltage providing circuit (2) is used for responding to an input end signal (Vin) of the corresponding signal inverting element (1), providing a first substrate bias voltage (V1) for the P-type transistor (MP) when the P-type transistor (MP) in the signal inverting element (1) is turned on, and providing a second substrate bias voltage (V2) for the P-type transistor (MP) when the P-type transistor (MP) in the signal inverting element (1) is not turned on, wherein the first substrate bias voltage (V1) is less than the second substrate bias voltage (V2) and is greater than a PN junction turn-on voltage. The signal inverting element (1) is used for inverting the input end signal (Vin). The flip-flop circuit (100) can repair a signal timing deviation caused by element aging.

Description

触发器电路和电子设备Trigger circuits and electronics
交叉引用cross reference
本公开要求于2022年09月19日提交的申请号为202211139843.0、名称为“触发器电路和电子设备”的中国专利申请的优先权,该中国专利申请的全部内容通过引用全部并入本文。This disclosure claims priority to the Chinese patent application with application number 202211139843.0 and titled "Trigger Circuit and Electronic Device" filed on September 19, 2022. The entire content of the Chinese patent application is incorporated herein by reference.
技术领域Technical field
本公开涉及集成电路技术领域,具体而言,涉及一种能够校正信号占空比偏差问题的触发器电路以及应用该触发器电路的电子设备。The present disclosure relates to the field of integrated circuit technology, and in particular, to a flip-flop circuit capable of correcting signal duty cycle deviation problems and electronic equipment applying the flip-flop circuit.
背景技术Background technique
NBTI(Negative Bias Temperature Instability,负偏压温度不稳定性)是当前和未来工艺面临的主要可靠性问题。NBTI (Negative Bias Temperature Instability) is a major reliability issue faced by current and future processes.
NBTI主要指PMOS处于反型工作状态时,器件参数(如开启电压Vt、跨导Gm、漏极电流Id)等随时间漂移带来的不稳定性,主要原因是在静态应力过程中PMOS退化。PMOS经过长时间的应力作用后,若得不到有效的恢复时间,会导致逻辑电路中信号波形畸形、时序漂移(包括占空比变化),甚至引发潜在的电路失效。NBTI mainly refers to the instability caused by device parameters (such as turn-on voltage Vt, transconductance Gm, drain current Id) drifting over time when PMOS is in the inversion working state. The main reason is the degradation of PMOS during the static stress process. If PMOS does not receive effective recovery time after long-term stress, it will lead to signal waveform deformation, timing drift (including duty cycle changes) in the logic circuit, and even potential circuit failure.
需要说明的是,在上述背景技术部分公开的信息仅用于加强对本公开的背景的理解,因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。It should be noted that the information disclosed in the above background section is only used to enhance understanding of the background of the present disclosure, and therefore may include information that does not constitute prior art known to those of ordinary skill in the art.
发明内容Contents of the invention
本公开的目的在于提供一种触发器电路与电子设备,用于至少在一定程度上克服PMOS在长时间使用后导致输出信号波形变化的问题。The purpose of the present disclosure is to provide a flip-flop circuit and electronic device for overcoming, at least to a certain extent, the problem of PMOS causing output signal waveform changes after long-term use.
根据本公开的第一方面,提供一种触发器电路,包括多个信号反相元件,每个所述信号反相元件的P型晶体管的衬底均对应连接一个偏压提供电路,所述偏压提供电路用于响应对应的所述信号反相元件的输入端信号,在所述信号反相元件中的P型晶体管导通时,对所述P型晶体管提供第一衬底偏压,在所述所述信号反相元件中的P型晶体管未导通时,对所述P型晶体管提供第二衬底偏压,所述第一衬底偏压小于所述第二衬底偏压且大于PN结导通电压,所述信号反相元件用于对输入端信号进行反相。According to a first aspect of the present disclosure, a flip-flop circuit is provided, including a plurality of signal inverting elements. The substrate of a P-type transistor of each signal inverting element is connected to a bias voltage providing circuit. The voltage providing circuit is used to respond to the input signal of the corresponding signal inverting element, and when the P-type transistor in the signal inverting element is turned on, provide a first substrate bias voltage to the P-type transistor. When the P-type transistor in the signal inverting element is not turned on, a second substrate bias voltage is provided to the P-type transistor, and the first substrate bias voltage is smaller than the second substrate bias voltage and Greater than the PN junction conduction voltage, the signal inverting element is used to invert the input signal.
在本公开实施例的一个示例性实施例中,每个所述偏压提供电路均包括:第一开关元件,第一端连接所述第一衬底偏压,第二端连接所述偏压提供电路对应的所述信号反相元件中P型晶体管的衬底,控制端连接所述偏压提供电路对应的所述信号反相元件的P型晶体管的栅极;第二开关元件,第一端连接所述第二衬底偏压,第二端连接所述第一开关元件的第二端,控制端连接所述偏压提供电路对应的所述信号反相元件的P型晶体管的 漏极。In an exemplary embodiment of the present disclosure, each of the bias supply circuits includes: a first switching element, a first end connected to the first substrate bias, and a second end connected to the bias. Provide the substrate of the P-type transistor in the signal inverting element corresponding to the circuit, and the control terminal is connected to the gate of the P-type transistor in the signal inverting element corresponding to the bias providing circuit; the second switching element, the first The second terminal is connected to the second substrate bias, the second terminal is connected to the second terminal of the first switching element, and the control terminal is connected to the drain of the P-type transistor of the signal inverting element corresponding to the bias providing circuit. .
在本公开实施例的一个示例性实施例中,所述触发器电路包括:第一反相器,输入端为所述触发器电路的输入端,输出端连接第一节点,所述第一反相器中的P型晶体管的衬底连接第一偏压提供电路,所述第一反相器为所述多个信号反相元件之一;第一传输门,第一控制端连接时钟信号,第二控制端连接互补时钟信号,输入端连接所述第一节点,输出端连接第二节点;第二反相器,输入端连接所述第二节点,输出端连接第三节点,所述第二反相器中的P型晶体管的衬底连接第二偏压提供电路,所述第二反相器为所述多个信号反相元件之一;第二传输门,第一控制端连接所述互补时钟信号,第二控制端连接所述时钟信号,输入端连接所述第三节点,输出端连接第四节点;第三反相器,输入端连接所述第四节点,输出端连接第五节点,所述第三反相器中的P型晶体管的衬底连接第三偏压提供电路,所述第三反相器为所述多个信号反相元件之一;第四反相器,输入端连接所述第五节点,输出端为所述触发器电路的第一输出端,所述第四反相器中的P型晶体管的衬底连接第四偏压提供电路,所述第四反相器为所述多个信号反相元件之一;第五反相器,输入端连接所述第四反相器的输出端,输出端为所述触发器电路的第二输出端,所述第五反相器中的P型晶体管的衬底连接所述第三偏压提供电路,所述第五反相器为所述多个信号反相元件之一。In an exemplary embodiment of the present disclosure, the flip-flop circuit includes: a first inverter, the input terminal is the input terminal of the flip-flop circuit, the output terminal is connected to a first node, and the first inverter The substrate of the P-type transistor in the phase device is connected to a first bias supply circuit, and the first inverter is one of the plurality of signal inversion elements; the first transmission gate, the first control terminal is connected to the clock signal, The second control terminal is connected to the complementary clock signal, the input terminal is connected to the first node, and the output terminal is connected to the second node; the second inverter has the input terminal connected to the second node, and the output terminal is connected to the third node. The substrate of the P-type transistor in the two inverters is connected to the second bias supply circuit, and the second inverter is one of the plurality of signal inverting elements; the second transmission gate, the first control terminal is connected to The complementary clock signal, the second control terminal is connected to the clock signal, the input terminal is connected to the third node, and the output terminal is connected to the fourth node; the third inverter, the input terminal is connected to the fourth node, and the output terminal is connected to the third node. Five nodes, the substrate of the P-type transistor in the third inverter is connected to a third bias providing circuit, the third inverter is one of the plurality of signal inverting elements; the fourth inverter , the input end is connected to the fifth node, the output end is the first output end of the flip-flop circuit, the substrate of the P-type transistor in the fourth inverter is connected to the fourth bias supply circuit, and the third The four inverters are one of the plurality of signal inverting elements; the fifth inverter has an input terminal connected to the output terminal of the fourth inverter, and the output terminal is the second output terminal of the flip-flop circuit, The substrate of the P-type transistor in the fifth inverter is connected to the third bias supply circuit, and the fifth inverter is one of the plurality of signal inversion elements.
在本公开实施例的一个示例性实施例中,还包括:第一反馈电路,输入端连接所述第三节点,输出端连接所述第二节点,用于根据时钟信号和互补时钟信号将所述第三节点的电位反相后反馈至所述第二节点,所述第一反馈电路包括奇数个所述信号反相元件。In an exemplary embodiment of the present disclosure, it further includes: a first feedback circuit, with an input terminal connected to the third node and an output terminal connected to the second node, for converting the clock signal and the complementary clock signal to the first feedback circuit. The potential of the third node is inverted and then fed back to the second node, and the first feedback circuit includes an odd number of the signal inverting elements.
在本公开实施例的一个示例性实施例中,所述第一反馈电路包括:第一P型晶体管,源极连接电源电压,栅极连接所述第三节点;第二P型晶体管,源极连接所述第一P型晶体管的漏极,栅极连接所述时钟信号,漏极连接所述第二节点;第一N型晶体管,源极接地,栅极连接所述第三节点;第二N型晶体管,源极连接所述第一N型晶体管的漏极,栅极连接所述互补时钟信号,漏极连接所述第二节点。In an exemplary embodiment of the present disclosure, the first feedback circuit includes: a first P-type transistor with a source connected to the power supply voltage and a gate connected to the third node; a second P-type transistor with a source connected to the power supply voltage. The drain of the first P-type transistor is connected, the gate is connected to the clock signal, and the drain is connected to the second node; the source of the first N-type transistor is connected to ground, and the gate is connected to the third node; the second An N-type transistor has a source connected to the drain of the first N-type transistor, a gate connected to the complementary clock signal, and a drain connected to the second node.
在本公开实施例的一个示例性实施例中,所述第一P型晶体管和所述第二P型晶体管的衬底均连接第五偏压提供电路。In an exemplary embodiment of the present disclosure, the substrates of the first P-type transistor and the second P-type transistor are both connected to a fifth bias providing circuit.
在本公开实施例的一个示例性实施例中,所述第一反馈电路包括串联的奇数个反相器和第一反馈传输门,所述第一反馈传输门的两个控制端分别连接所述时钟信号和所述互补时钟信号。In an exemplary embodiment of the present disclosure, the first feedback circuit includes an odd number of inverters connected in series and a first feedback transmission gate, and two control terminals of the first feedback transmission gate are respectively connected to the clock signal and the complementary clock signal.
在本公开实施例的一个示例性实施例中,还包括:第二反馈电路,输入端连接所述第五节点,输出端连接所述第四节点,用于根据时钟信号和互补时钟信号将所述第五节点的电位反相后反馈至所述第四节点,所述第二反馈电路包括奇数个所述信号反相元件。In an exemplary embodiment of the present disclosure, it further includes: a second feedback circuit, the input end is connected to the fifth node, and the output end is connected to the fourth node, for converting the clock signal and the complementary clock signal according to the clock signal and the complementary clock signal. The potential of the fifth node is inverted and then fed back to the fourth node, and the second feedback circuit includes an odd number of the signal inverting elements.
在本公开实施例的一个示例性实施例中,所述第二反馈电路包括:第三P型晶体管,源极连接电源电压,栅极连接所述第五节点;第四P型晶体管,源极连接所述第三P型晶体管的漏极,栅极连接所述互补时钟信号,漏极连接所述第四节点;第三N型晶体管, 源极接地,栅极连接所述第五节点;第四N型晶体管,源极连接所述第三N型晶体管的漏极,栅极连接所述时钟信号,漏极连接所述第四节点。In an exemplary embodiment of the present disclosure, the second feedback circuit includes: a third P-type transistor with a source connected to the power supply voltage and a gate connected to the fifth node; a fourth P-type transistor with a source connected to the power supply voltage. The drain of the third P-type transistor is connected, the gate is connected to the complementary clock signal, and the drain is connected to the fourth node; the source of the third N-type transistor is connected to ground, and the gate is connected to the fifth node; Four N-type transistors, the source is connected to the drain of the third N-type transistor, the gate is connected to the clock signal, and the drain is connected to the fourth node.
在本公开实施例的一个示例性实施例中,所述第三P型晶体管和所述第四P型晶体管的衬底均连接所述第四偏压提供电路。In an exemplary embodiment of the present disclosure, substrates of the third P-type transistor and the fourth P-type transistor are both connected to the fourth bias supply circuit.
在本公开实施例的一个示例性实施例中,所述第二反馈电路包括串联的奇数个反相器和第二反馈传输门,所述第二反馈传输门的两个控制端分别连接所述时钟信号和所述互补时钟信号。In an exemplary embodiment of the present disclosure, the second feedback circuit includes an odd number of inverters and a second feedback transmission gate connected in series, and two control terminals of the second feedback transmission gate are respectively connected to the clock signal and the complementary clock signal.
在本公开实施例的一个示例性实施例中,还包括:复位电路,输入端用于接收复位信号,输出端连接所述第四节点,用于响应所述复位信号对所述第四节点输出复位电平。In an exemplary embodiment of the present disclosure, it further includes: a reset circuit, the input end is used to receive a reset signal, the output end is connected to the fourth node, and is used to output to the fourth node in response to the reset signal. reset level.
在本公开实施例的一个示例性实施例中,所述复位电平为低电平,所述复位电路包括第一复位晶体管,所述第一复位晶体管为N型晶体管,所述第一复位晶体管的源极接地,漏极连接所述第四节点,栅极用于连接第一复位信号。In an exemplary embodiment of the present disclosure, the reset level is a low level, the reset circuit includes a first reset transistor, the first reset transistor is an N-type transistor, and the first reset transistor The source electrode is connected to ground, the drain electrode is connected to the fourth node, and the gate electrode is used to connect the first reset signal.
在本公开实施例的一个示例性实施例中,所述复位电平为高电平,所述复位电路包括第二复位晶体管,所述第二复位晶体管为P型晶体管,所述第二复位晶体管的源极连接电源电压,漏极连接所述第四节点,栅极用于连接第二复位信号。In an exemplary embodiment of the present disclosure, the reset level is a high level, the reset circuit includes a second reset transistor, the second reset transistor is a P-type transistor, and the second reset transistor The source electrode is connected to the power supply voltage, the drain electrode is connected to the fourth node, and the gate electrode is used to connect the second reset signal.
根据本公开的第二方面,提供一种电子设备,包括如上任一项所述的触发器电路。According to a second aspect of the present disclosure, an electronic device is provided, including the flip-flop circuit as described in any one of the above.
本公开实施例通过在P型晶体管导通时提高P型晶体管的衬底偏压,可以有效克服由于应力时间增加、恢复时间不足导致的P型晶体管的NBTI效应,校正由于NBTI效应导致的信号变形。Embodiments of the present disclosure can effectively overcome the NBTI effect of the P-type transistor caused by increased stress time and insufficient recovery time by increasing the substrate bias of the P-type transistor when the P-type transistor is turned on, and correct the signal distortion caused by the NBTI effect. .
应当理解的是,以上的一般描述和后文的细节描述仅是示例性和解释性的,并不能限制本公开。It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only, and do not limit the present disclosure.
附图说明Description of the drawings
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本公开的实施例,并与说明书一起用于解释本公开的原理。显而易见地,下面描述中的附图仅仅是本公开的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without exerting creative efforts.
图1是本公开实施例中触发器电路的示意图。FIG. 1 is a schematic diagram of a flip-flop circuit in an embodiment of the present disclosure.
图2是本公开实施例中偏压提供电路的示意图。FIG. 2 is a schematic diagram of a bias voltage providing circuit in an embodiment of the present disclosure.
图3是本公开一个实施例中触发器电路的结构示意图。FIG. 3 is a schematic structural diagram of a flip-flop circuit in an embodiment of the present disclosure.
图4是图3所示电路的时序图。FIG. 4 is a timing diagram of the circuit shown in FIG. 3 .
图5A和图5B分别是改良前和改良后触发器电路的时序图。Figures 5A and 5B are timing diagrams of the flip-flop circuit before and after the improvement respectively.
图6是本公开一个实施例中第一反馈电路的结构示意图。Figure 6 is a schematic structural diagram of a first feedback circuit in an embodiment of the present disclosure.
图7是本公开一个实施例中第二反馈电路的结构示意图。Figure 7 is a schematic structural diagram of a second feedback circuit in an embodiment of the present disclosure.
图8是本公开一个实施例中复位电路的结构示意图。FIG. 8 is a schematic structural diagram of a reset circuit in an embodiment of the present disclosure.
具体实施方式Detailed ways
现在将参考附图更全面地描述示例实施方式。然而,示例实施方式能够以多种形式实施,且不应被理解为限于在此阐述的范例;相反,提供这些实施方式使得本公开将更加全面和完整,并将示例实施方式的构思全面地传达给本领域的技术人员。所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中,提供许多具体细节从而给出对本公开的实施方式的充分理解。然而,本领域技术人员将意识到,可以实践本公开的技术方案而省略所述特定细节中的一个或更多,或者可以采用其它的方法、组元、装置、步骤等。在其它情况下,不详细示出或描述公知技术方案以避免喧宾夺主而使得本公开的各方面变得模糊。Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in various forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concepts of the example embodiments. To those skilled in the art. The described features, structures or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or more of the specific details described, or other methods, components, devices, steps, etc. may be adopted. In other instances, well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the disclosure.
此外,附图仅为本公开的示意性图解,图中相同的附图标记表示相同或类似的部分,因而将省略对它们的重复描述。附图中所示的一些方框图是功能实体,不一定必须与物理或逻辑上独立的实体相对应。可以采用软件形式来实现这些功能实体,或在一个或多个硬件模块或集成电路中实现这些功能实体,或在不同网络和/或处理器装置和/或微控制器装置中实现这些功能实体。In addition, the drawings are only schematic illustrations of the present disclosure, and the same reference numerals in the drawings represent the same or similar parts, and thus their repeated description will be omitted. Some of the block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities. These functional entities may be implemented in software form, or implemented in one or more hardware modules or integrated circuits, or implemented in different networks and/or processor devices and/or microcontroller devices.
下面结合附图对本公开示例实施方式进行详细说明。Example embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.
图1是本公开实施例中触发器电路的示意图。FIG. 1 is a schematic diagram of a flip-flop circuit in an embodiment of the present disclosure.
参考图1,触发器电路100包括多个信号反相元件1,每个信号反相元件1的P型晶体管的衬底均对应连接一个偏压提供电路2,偏压提供电路2用于响应对应的信号反相元件1的输入端信号,在信号反相元件中的P型晶体管导通时,对P型晶体管提供第一衬底偏压V1,在信号反相元件中的P型晶体管未导通时,对P型晶体管提供第二衬底偏压V2,第一衬底偏压V1小于第二衬底偏压V2且大于PN结导通电压,信号反相元件1用于对输入端信号进行反相。Referring to Figure 1, the flip-flop circuit 100 includes a plurality of signal inverting elements 1. The substrate of the P-type transistor of each signal inverting element 1 is connected to a bias providing circuit 2. The bias providing circuit 2 is used to respond to the corresponding The input signal of the signal inverting element 1, when the P-type transistor in the signal inverting element is turned on, provides the first substrate bias V1 to the P-type transistor, and the P-type transistor in the signal inverting element is not turned on. When turned on, the second substrate bias V2 is provided to the P-type transistor. The first substrate bias V1 is smaller than the second substrate bias V2 and larger than the PN junction turn-on voltage. The signal inverting element 1 is used to invert the input signal Perform inversion.
在本公开实施例中,触发器电路100例如可以为D触发器。图1所示是D触发器。D触发器是一个具有记忆功能的,具有两个稳定状态的信息存储器件。D触发器的两个稳定状态分别为“0”和“1”,在一定的外界信号作用下,可以从一个稳定状态翻转到另一个稳定状态。D触发器由多个门电路构成,触发方式为电平触发和边沿触发两种,前者在CP(时钟脉冲)等于1时可触发,后者在CP的前沿(正跳变0→1)触发对于边沿D触发器,由于在CP=1期间电路具有维持阻塞作用,所以在CP=1期间,D触发器输入端的数据状态变化,不会影响D触发器的输出状态。本公开实施例的D触发器可以为边沿触发,也可以为电平触发。In the embodiment of the present disclosure, the flip-flop circuit 100 may be a D flip-flop, for example. Figure 1 shows a D flip-flop. The D flip-flop is an information storage device with memory function and two stable states. The two stable states of the D flip-flop are "0" and "1" respectively. Under the action of a certain external signal, it can flip from one stable state to another. The D flip-flop is composed of multiple gate circuits. The triggering methods are level triggering and edge triggering. The former can be triggered when CP (clock pulse) is equal to 1, and the latter can be triggered on the leading edge of CP (positive transition 0→1). For edge D flip-flops, since the circuit has a maintaining blocking effect during CP=1, the change in data state at the input terminal of the D flip-flop during CP=1 will not affect the output state of the D flip-flop. The D flip-flop in the embodiment of the present disclosure may be edge triggered or level triggered.
在本公开实施例中,以图1所示触发器为例进行说明,在本公开的其他实施例中,触发器也可以为其他电路形式,连接偏压提供电路的P型晶体管也可以位于其他可能存在NBTI效应的位置。In the embodiment of the disclosure, the flip-flop shown in Figure 1 is taken as an example for explanation. In other embodiments of the disclosure, the flip-flop can also be in other circuit forms, and the P-type transistor connected to the bias supply circuit can also be located in other Locations where NBTI effects may exist.
P型晶体管的传输延迟时间t d符合以下公式: The transmission delay time t d of the P-type transistor conforms to the following formula:
Figure PCTCN2023070546-appb-000001
Figure PCTCN2023070546-appb-000001
其中,V DD是电源电路,I D是P型晶体管的漏极电流,W、L分别是P型晶体管的沟道宽度和沟道长度,μ eff是载流子迁移率,V T是P型晶体管的阈值电压,C OX是栅极与衬底间氧化层的单位面积电容。 Among them, V DD is the power circuit, I D is the drain current of the P-type transistor, W and L are the channel width and channel length of the P-type transistor respectively, μ eff is the carrier mobility, and VT is the P-type transistor. The threshold voltage of the transistor, C OX is the capacitance per unit area of the oxide layer between the gate and the substrate.
随着应力时间延长,载流子迁移率μ eff减小,阈值电压V T漂移,导致传输延迟时间t d增大,形成时序漂移(占空比发生变化)。 As the stress time prolongs, the carrier mobility μ eff decreases and the threshold voltage VT drifts, causing the transmission delay time t d to increase and forming a timing drift (a change in the duty cycle).
本公开实施例通过对P型晶体管的衬底连接偏压提供电路2,并使偏压提供电路2在对应的P型晶体管导通(即P型晶体管栅极电压低于阈值电压VT)时提高对P型晶体管的衬底输出的衬底偏压,可以在P型晶体管导通时,降低阈值电压V T,修正由于载流子迁移率μ eff降低导致的传输延迟时间t d增大,修复时序漂移。 The embodiment of the present disclosure connects the bias voltage providing circuit 2 to the substrate of the P-type transistor, and enables the bias voltage providing circuit 2 to increase when the corresponding P-type transistor is turned on (that is, the gate voltage of the P-type transistor is lower than the threshold voltage VT). The substrate bias voltage output to the substrate of the P-type transistor can reduce the threshold voltage VT when the P-type transistor is turned on, correct the increase in the transmission delay time t d caused by the reduction of the carrier mobility μ eff , and repair Timing drift.
图2是本公开实施例中偏压提供电路的示意图。FIG. 2 is a schematic diagram of a bias voltage providing circuit in an embodiment of the present disclosure.
参考图2,在本公开实施例中,每个偏压提供电路2均包括:Referring to Figure 2, in the embodiment of the present disclosure, each bias voltage providing circuit 2 includes:
第一开关元件K1,第一端连接第一衬底偏压V1,第二端连接偏压提供电路对应的信号反相元件1中P型晶体管的衬底,控制端连接偏压提供电路对应的信号反相元件的P型晶体管的栅极;The first switching element K1 has a first end connected to the first substrate bias V1, a second end connected to the substrate of the P-type transistor in the signal inverting element 1 corresponding to the bias providing circuit, and a control end connected to the corresponding bias providing circuit. The gate of the P-type transistor of the signal inverting element;
第二开关元件K2,第一端连接第二衬底偏压V2,第二端连接第一开关元件的第二端,控制端连接偏压提供电路对应的信号反相元件1的P型晶体管的漏极。The second switching element K2 has a first end connected to the second substrate bias voltage V2, a second end connected to the second end of the first switching element, and a control end connected to the P-type transistor of the signal inverting element 1 corresponding to the bias supply circuit. drain.
在图2所示实施例中,以反相器作为信号反相元件1的示例,在其他实施例中,信号反相元件1也可以为其他具有反相功能的元件,例如非门、与非门、或非门等等逻辑门电路。此外,第一开关元件K1和第二开关元件K2均为P型晶体管。In the embodiment shown in FIG. 2 , an inverter is used as an example of the signal inversion element 1 . In other embodiments, the signal inversion element 1 can also be other elements with inversion functions, such as NOT gates and NANDs. Gate, NOR gate and other logic gate circuits. In addition, both the first switching element K1 and the second switching element K2 are P-type transistors.
信号反相元件1包括P型晶体管MP和N型晶体管MN,其中P型晶体管MP的源极连接的电源电压等于第二衬底偏压V2,即,在一个实施例中,第二衬底偏压V2等于触发器电路100的电源电压。The signal inversion element 1 includes a P-type transistor MP and an N-type transistor MN, where the source voltage of the P-type transistor MP is connected to a power supply voltage equal to the second substrate bias voltage V2, that is, in one embodiment, the second substrate bias voltage Voltage V2 is equal to the supply voltage of flip-flop circuit 100.
在信号反相元件1的输入信号Vin为低电平时,第一开关元件K1开启,P型晶体管MP导通,P型晶体管MP的衬底偏压等于第一衬底偏压V1,N型晶体管MN关断,信号反相元件1的输出信号Vout等于高电平,第二开关元件K2关断。When the input signal Vin of the signal inverting element 1 is low level, the first switching element K1 is turned on, the P-type transistor MP is turned on, the substrate bias of the P-type transistor MP is equal to the first substrate bias V1, and the N-type transistor MN is turned off, the output signal Vout of the signal inverting element 1 is equal to the high level, and the second switching element K2 is turned off.
在信号反相元件1的输入信号Vin为高电平时,第一开关元件K1关断,P型晶体管MP关断,N型晶体管MN导通,信号反相元件1的输出信号Vout等于低电平,第二开关元件K2开启,P型晶体管MP的衬底偏压等于第二衬底偏压V2,即P型晶体管MP的源极连接的电源电压,使得P型晶体管MP导通时的阈值电压V T相较于P型晶体管MP未导通时负向偏移,漏极电流增大,从而减小传输延迟时间t dWhen the input signal Vin of the signal inverting element 1 is at a high level, the first switch element K1 is turned off, the P-type transistor MP is turned off, the N-type transistor MN is turned on, the output signal Vout of the signal inverting element 1 is equal to a low level, the second switch element K2 is turned on, and the substrate bias of the P-type transistor MP is equal to the second substrate bias V2, that is, the power supply voltage connected to the source of the P-type transistor MP, so that the threshold voltage VT when the P-type transistor MP is turned on is negatively offset compared to when the P-type transistor MP is not turned on, and the drain current increases, thereby reducing the transmission delay time td .
下面,通过具体电路介绍图2所示偏压提供电路的应用场景。Next, the application scenarios of the bias voltage supply circuit shown in Figure 2 are introduced through specific circuits.
图3是本公开一个实施例中触发器电路的结构示意图。FIG. 3 is a schematic structural diagram of a flip-flop circuit in an embodiment of the present disclosure.
参考图3,触发器电路300可以包括:Referring to Figure 3, flip-flop circuit 300 may include:
第一反相器OP1,输入端为触发器电路的输入端,输出端连接第一节点N1,第一反相器OP1中的P型晶体管的衬底连接第一偏压提供电路31,第一反相器OP1为多个信号反相元件之一;The input terminal of the first inverter OP1 is the input terminal of the flip-flop circuit, and the output terminal is connected to the first node N1. The substrate of the P-type transistor in the first inverter OP1 is connected to the first bias supply circuit 31. The inverter OP1 is one of multiple signal inverting components;
第一传输门TG1,第一控制端连接时钟信号CLK,第二控制端连接互补时钟信号CLKB,输入端连接第一节点N1,输出端连接第二节点N2;The first transmission gate TG1 has a first control terminal connected to the clock signal CLK, a second control terminal connected to the complementary clock signal CLKB, an input terminal connected to the first node N1, and an output terminal connected to the second node N2;
第二反相器OP2,输入端连接第二节点N2,输出端连接第三节点N3,第二反相器OP2中的P型晶体管的衬底连接第二偏压提供电路32,第二反相器OP2为多个信号反相元件之一;The input terminal of the second inverter OP2 is connected to the second node N2, and the output terminal is connected to the third node N3. The substrate of the P-type transistor in the second inverter OP2 is connected to the second bias supply circuit 32, and the second inverter OP2 is connected to the third node N3. OP2 is one of multiple signal inverting components;
第二传输门TG2,第一控制端连接互补时钟信号CLKB,第二控制端连接时钟信号CLK,输入端连接第三节点N3,输出端连接第四节点N4;In the second transmission gate TG2, the first control terminal is connected to the complementary clock signal CLKB, the second control terminal is connected to the clock signal CLK, the input terminal is connected to the third node N3, and the output terminal is connected to the fourth node N4;
第三反相器OP3,输入端连接第四节点N4,输出端连接第五节点N5,第三反相器OP3中的P型晶体管的衬底连接第三偏压提供电路33,第三反相器OP3为多个信号反相元件之一;A third inverter OP3, the input end of which is connected to the fourth node N4, the output end of which is connected to the fifth node N5, the substrate of the P-type transistor in the third inverter OP3 is connected to the third bias supply circuit 33, and the third inverter OP3 is one of the plurality of signal inverting elements;
第四反相器OP4,输入端连接第五节点N5,输出端为触发器电路的第一输出端Q,第四反相器OP4中的P型晶体管的衬底连接第四偏压提供电路34,第四反相器OP4为多个信号反相元件之一;The input terminal of the fourth inverter OP4 is connected to the fifth node N5, and the output terminal is the first output terminal Q of the flip-flop circuit. The substrate of the P-type transistor in the fourth inverter OP4 is connected to the fourth bias supply circuit 34 , the fourth inverter OP4 is one of multiple signal inverting elements;
第五反相器OP5,输入端连接第四反相器OP4的输出端,输出端为触发器电路的第二输出端QB,第五反相器OP5中的P型晶体管的衬底连接第三偏压提供电路33,第五反相器OP5为多个信号反相元件之一。The input terminal of the fifth inverter OP5 is connected to the output terminal of the fourth inverter OP4, the output terminal is the second output terminal QB of the flip-flop circuit, and the substrate of the P-type transistor in the fifth inverter OP5 is connected to the third In the bias voltage providing circuit 33, the fifth inverter OP5 is one of a plurality of signal inverting elements.
其中,互补时钟信号CLKB与时钟信号CLK的电平状态完全相反。The level states of the complementary clock signal CLKB and the clock signal CLK are completely opposite.
在图3所示实施例中,每个反相器对应连接的偏压提供电路的结构和工作原理均与图2所示实施例的偏压提供电路的结构和工作原理相同。第一偏压提供电路31的输出节点为A1、第二偏压提供电路32的输出节点为A2、第三偏压提供电路33的输出节点为A3、第四偏压提供电路34的输出节点为A4。第五反相器OP5的P型晶体管的衬底连接第三偏压提供电路33的输出节点A3。In the embodiment shown in FIG. 3 , the structure and working principle of the bias providing circuit corresponding to each inverter are the same as those of the bias providing circuit in the embodiment shown in FIG. 2 . The output node of the first bias providing circuit 31 is A1, the output node of the second bias providing circuit 32 is A2, the output node of the third bias providing circuit 33 is A3, and the output node of the fourth bias providing circuit 34 is A4. The substrate of the P-type transistor of the fifth inverter OP5 is connected to the output node A3 of the third bias supply circuit 33 .
第一传输门TG1用于在时钟信号CLK为高电平时,控制第一反相器OP1的输出信号从第一节点N1传输到第二节点N2;传输门TG2用于在时钟信号CLK为低电平时,控制第二反相器OP2的输出信号从第三节点N3传输到第四节点N4。The first transmission gate TG1 is used to control the output signal of the first inverter OP1 to be transmitted from the first node N1 to the second node N2 when the clock signal CLK is high level; the transmission gate TG2 is used to control the output signal of the first inverter OP1 from the first node N1 to the second node N2 when the clock signal CLK is low level. Normally, the output signal controlling the second inverter OP2 is transmitted from the third node N3 to the fourth node N4.
第一传输门TG1的结构可见图3左侧虚线框的示例。第一传输门TG1可以通过一个P型晶体管MPTG和一个N型晶体管MNTG构成,P型晶体管MPTG的第一端连接第一节点N1,第二端连接第二节点N2栅极连接互补时钟信号CLKB;N型晶体管MNTG的第一端连接第一节点N1,第二端连接第二节点N2,栅极连接时钟信号CLK。在时钟信号CLK为低电平、互补时钟信号CLKB为高电平时,N型晶体管MNTG关断、P型晶体管MPTG关断,第一传输门TG1关断;在时钟信号CLK为高电平、互补时钟信号CLKB为低电平时,N型晶体管MNTG导通、P型晶体管MPTG导通,第一传输 门TG1将第一节点N1的信号传输到第二节点N2。The structure of the first transmission gate TG1 can be seen in the example of the dotted line box on the left side of Figure 3 . The first transmission gate TG1 can be composed of a P-type transistor MPTG and an N-type transistor MNTG. The first end of the P-type transistor MPTG is connected to the first node N1, and the second end is connected to the second node N2. The gate is connected to the complementary clock signal CLKB; The first terminal of the N-type transistor MNTG is connected to the first node N1, the second terminal is connected to the second node N2, and the gate is connected to the clock signal CLK. When the clock signal CLK is at a low level and the complementary clock signal CLKB is at a high level, the N-type transistor MNTG is turned off, the P-type transistor MPTG is turned off, and the first transmission gate TG1 is turned off; when the clock signal CLK is at a high level and the complementary clock signal When the clock signal CLKB is low level, the N-type transistor MNTG is turned on, the P-type transistor MPTG is turned on, and the first transmission gate TG1 transmits the signal of the first node N1 to the second node N2.
第二传输门TG2的结构可以与第一传输门TG1的结构相同,仅P型晶体管的栅极连接时钟信号CLK,N型晶体管的栅极连接互补时钟信号CLKB,从而使第二传输门TG2仅在时钟信号CLK为低电平、互补时钟信号CLKB为高电平时导通,将第三节点N3的信号传输到第四节点N4。The structure of the second transmission gate TG2 may be the same as that of the first transmission gate TG1. Only the gate of the P-type transistor is connected to the clock signal CLK, and the gate of the N-type transistor is connected to the complementary clock signal CLKB, so that the second transmission gate TG2 only It is turned on when the clock signal CLK is low level and the complementary clock signal CLKB is high level, and the signal of the third node N3 is transmitted to the fourth node N4.
第一传输门TG1和第二传输门TG2用以实现对触发器电路内部传输的信号的时序控制,下面,以图3所示电路为例对各节点的信号时序进行说明。The first transmission gate TG1 and the second transmission gate TG2 are used to control the timing of signals transmitted within the flip-flop circuit. Below, the signal timing of each node will be explained by taking the circuit shown in Figure 3 as an example.
图4是图3所示电路的时序图。Figure 4 is a timing diagram of the circuit shown in Figure 3.
参考图4,时钟信号CLK是高低电平交替出现的周期信号。触发器电路的输入信号D在第一时刻T1出现上升沿,由低电平转换为高电平。第一偏压提供电路31的输出节点A1提供第二衬底偏压V2。与此同时,第一反相器OP1输出D的反相信号即低电平到第一节点N1,在第一时刻T1时钟信号CLK为高电平,第一传输门TG1导通,将第一节点N1的信号传输到第二节点N2,第二反相器OP2中的P型晶体管导通,第二偏压提供电路32通过输出节点A2为第二反相器OP2中的P型晶体管提供第一衬底偏压V1,第二反相器OP2输出完整的上升沿到第三节点N3。Referring to Figure 4, the clock signal CLK is a periodic signal with alternating high and low levels. The input signal D of the flip-flop circuit has a rising edge at the first moment T1 and changes from low level to high level. The output node A1 of the first bias supply circuit 31 provides the second substrate bias V2. At the same time, the first inverter OP1 outputs the inverted signal of D, that is, low level, to the first node N1. At the first moment T1, the clock signal CLK is high level, and the first transmission gate TG1 is turned on, turning on the first node N1. The signal at the node N1 is transmitted to the second node N2, the P-type transistor in the second inverter OP2 is turned on, and the second bias supply circuit 32 provides the P-type transistor in the second inverter OP2 with the output node A2. When the substrate bias voltage V1 is applied, the second inverter OP2 outputs a complete rising edge to the third node N3.
由于在第一时刻T1时钟信号CLK为高电平,第二传输门TG2不导通,直到在第二时刻T2,时钟信号CLK转换为低电平,第二传输门TG2导通,将第三节点N3的高电平传输到第四节点N4,第三反相器OP3的输出端输出低电平到第五节点N5,第三偏压提供电路33的输出节点A3提供较高的第二衬底偏压V2,第四偏压提供电路34的输出节点A4提供较低的第一衬底偏压V1。Since the clock signal CLK is high level at the first time T1, the second transmission gate TG2 is not conductive until the second time T2, the clock signal CLK is converted to a low level, the second transmission gate TG2 is conductive, and the third transmission gate TG2 is turned on. The high level of node N3 is transmitted to the fourth node N4, the output terminal of the third inverter OP3 outputs a low level to the fifth node N5, and the output node A3 of the third bias supply circuit 33 provides a higher second offset voltage. Bottom bias voltage V2, the output node A4 of the fourth bias voltage providing circuit 34 provides a lower first substrate bias voltage V1.
在第三时刻T3,触发器电路的输入信号D由高电平转换为低电平,第一反相器OP1对第一节点N1输出高电平,第一偏压提供电路31的输出节点A1输出较低的第一衬底偏压V1;此时时钟信号CLK为高电平,第一传输门TG1导通,将第一节点N1的信号传输到第二节点N2,第二反相器OP2对第三节点N3输出低电平,第二偏压提供电路32的输出节点A2输出较高的第二衬底偏压V2。At the third time T3, the input signal D of the flip-flop circuit changes from high level to low level, the first inverter OP1 outputs a high level to the first node N1, and the output node A1 of the first bias providing circuit 31 Output a lower first substrate bias voltage V1; at this time, the clock signal CLK is high level, the first transmission gate TG1 is turned on, and the signal of the first node N1 is transmitted to the second node N2, and the second inverter OP2 The third node N3 outputs a low level, and the output node A2 of the second bias voltage providing circuit 32 outputs a higher second substrate bias voltage V2.
由于在第三时刻T3时钟信号CLK为高电平,第二传输门TG2关断,第四节点N4维持高电平。在第四时刻T4,时钟信号CLK转换为低电平,第二传输门TG2导通,将第三节点N3的低电平传输到第四节点N4,进而通过第三反相器OP3对第五节点N5输出高电平,此时,第三偏压提供电路33通过输出节点A3输出较低的第一衬底偏压V1,第四偏压提供电路34通过输出节点A4输出较低的第二衬底偏压V2。Since the clock signal CLK is at a high level at the third time T3, the second transmission gate TG2 is turned off, and the fourth node N4 remains at a high level. At the fourth time T4, the clock signal CLK switches to low level, and the second transmission gate TG2 is turned on, transmitting the low level of the third node N3 to the fourth node N4, and then transmits the low level of the third node N3 to the fourth node N4 through the third inverter OP3. The node N5 outputs a high level. At this time, the third bias voltage providing circuit 33 outputs a lower first substrate bias voltage V1 through the output node A3, and the fourth bias voltage providing circuit 34 outputs a lower second substrate bias voltage V1 through the output node A4. Substrate bias V2.
与上述过类似,在第五时刻T5,由于输入信号D的上升沿出现在时钟信号CLK为低电平时,第一传输门TG1关断,第一节点N1的低电平直至第六时刻T6时钟信号CLK为高电平时才从第一节点N1传输到第二节点N2。在第二反相器OP2将第二节点N2的信号反相后对第三节点N3输出高电平时,第二传输门TG2关断,直至第七时刻T7时钟信号CLK转换为低电平,第二传输门TG2导通,将第三节点N3的高电平传输 到第四节点N4,使第三反相器OP3对第五节点N5出现低电平信号。Similar to the above, at the fifth time T5, since the rising edge of the input signal D appears when the clock signal CLK is low level, the first transmission gate TG1 is turned off, and the low level of the first node N1 remains until the sixth time T6. The signal CLK is transmitted from the first node N1 to the second node N2 only when it is high level. When the second inverter OP2 inverts the signal of the second node N2 and then outputs a high level to the third node N3, the second transmission gate TG2 is turned off until the clock signal CLK of the seventh moment T7 switches to a low level. The second transmission gate TG2 is turned on and transmits the high level of the third node N3 to the fourth node N4, causing the third inverter OP3 to present a low level signal to the fifth node N5.
在第八时刻T8,输入信号D出现下降沿,时钟信号CLK为低电平,第一传输门TG1关断。因此第一节点N1的高电平直至第九时刻T9时钟信号CLK为高电平、第一传输门TG1导通时才传输到第二节点N2。在第十时刻T10时钟信号CLK出现下降沿,第二传输门TG2导通,将第三节点N3的信号传输到第四节点N4,使第三反相器OP3对第五节点N5出现高电平信号。At the eighth time T8, the input signal D appears with a falling edge, the clock signal CLK is low level, and the first transmission gate TG1 is turned off. Therefore, the high level of the first node N1 is not transmitted to the second node N2 until the clock signal CLK is high level at the ninth time T9 and the first transmission gate TG1 is turned on. At the tenth time T10, the clock signal CLK appears with a falling edge, and the second transmission gate TG2 is turned on, transmitting the signal of the third node N3 to the fourth node N4, causing the third inverter OP3 to present a high level to the fifth node N5. Signal.
在上述过程中,各偏压提供电路的输出节点A1、A2、A3、A4的电压随着其对应的反相器的输入信号而改变,于此不再赘述。During the above process, the voltages of the output nodes A1, A2, A3, and A4 of each bias voltage supply circuit change with the input signals of their corresponding inverters, which will not be described again here.
通过图4所示时序图可知,通过第一传输门TG1和第二传输门TG2,控制触发器电路的输出信号的时长为时钟信号CLK的周期的整数倍。It can be seen from the timing diagram shown in FIG. 4 that through the first transmission gate TG1 and the second transmission gate TG2, the duration of the output signal of the flip-flop circuit is controlled to be an integer multiple of the period of the clock signal CLK.
图5A和图5B分别是改良前和改良后触发器电路的时序图。Figures 5A and 5B are timing diagrams of the flip-flop circuit before and after the improvement respectively.
参考图5A,在未加入偏压提供电路时,在第一时刻T1,输入信号D传输到第一反相器OP1的输入端后,第一反相器OP1的输出端输出输入信号D的反相信号。第一传输门TG1导通,第二节点N2出现低电平,第三节点N3作为第二反相器OP2的输出节点,受到第二反相器OP2中P型晶体管的NBTI效应影响,出现上升沿形变,第二传输门TG2关断。Referring to Figure 5A, when the bias supply circuit is not added, at the first time T1, after the input signal D is transmitted to the input terminal of the first inverter OP1, the output terminal of the first inverter OP1 outputs the inverse of the input signal D. Believe the signal. The first transmission gate TG1 is turned on, the second node N2 appears low level, and the third node N3, as the output node of the second inverter OP2, is affected by the NBTI effect of the P-type transistor in the second inverter OP2 and appears rising. Along the deformation, the second transmission gate TG2 is turned off.
在第二时刻T2,时钟信号CLK出现下降沿,第二传输门TG2导通,第三节点N3的高电平信号传输到第四节点N4,使得第三反相器OP3对第五节点N5输出低电平。At the second time T2, the clock signal CLK has a falling edge, the second transmission gate TG2 is turned on, and the high-level signal of the third node N3 is transmitted to the fourth node N4, causing the third inverter OP3 to output to the fifth node N5. low level.
在第三时刻T3,输入信号D由高电平转换为低电平时,第一反相器OP1中的P型晶体管导通,受到NBTI效应的影响,P型晶体管的传输延迟时间增加,导致第一反相器OP1输出到第二节点N2的信号出现形变。此时时钟信号CLK为高电平,第一传输门TG1导通,但是,由于第二节点N2的信号出现形变,上升幅度较小,该上升沿未能传输到第二节点N2。而且,在后续第四时刻T4,出现时钟信号CLK的下降沿、第一传输门TG1关断时,第一节点N1的信号上升幅度仍然没有达到能够通过第一传输门TG1的传输要求,导致第二节点N2的新药一直维持在低电平。对应地,其他位置的信号出现了时序错乱。At the third time T3, when the input signal D transitions from high level to low level, the P-type transistor in the first inverter OP1 is turned on. Affected by the NBTI effect, the transmission delay time of the P-type transistor increases, resulting in the The signal output from the inverter OP1 to the second node N2 is deformed. At this time, the clock signal CLK is at a high level, and the first transmission gate TG1 is turned on. However, because the signal at the second node N2 is deformed and the rising amplitude is small, the rising edge cannot be transmitted to the second node N2. Moreover, at the subsequent fourth time T4, when the falling edge of the clock signal CLK occurs and the first transmission gate TG1 is turned off, the rising amplitude of the signal at the first node N1 still does not meet the transmission requirement to pass through the first transmission gate TG1, resulting in the The new drug of the second node N2 has been maintained at a low level. Correspondingly, the timing of signals at other locations is out of order.
直至一个时钟周期后,第一传输门TG1再次导通时,才将第一节点N1的上升沿传输到第二节点N2,但是此时信号时序已经与输入信号D存在较大差距了。It is not until one clock cycle later that the first transmission gate TG1 is turned on again that the rising edge of the first node N1 is transmitted to the second node N2. However, at this time, the signal timing is already significantly different from the input signal D.
此外可以看出,第三反相器OP3的输出信号(第五节点N5)的上升沿也出现了形变。In addition, it can be seen that the rising edge of the output signal of the third inverter OP3 (fifth node N5) is also deformed.
参考图5B,在加入偏压提供电路之后,由于各反相器在输出信号上升沿时,降低了P型晶体管的衬底偏压,减小了信号上升沿的输出延迟时间(即信号形变),第一节点N1的信号得以在第一传输门TG1导通的同时传输到第二节点N2,后续节点的信号形态和时序也得到了修复。Referring to Figure 5B, after adding the bias supply circuit, since each inverter reduces the substrate bias of the P-type transistor at the rising edge of the output signal, the output delay time of the rising edge of the signal (i.e., signal deformation) is reduced. , the signal of the first node N1 can be transmitted to the second node N2 while the first transmission gate TG1 is turned on, and the signal shape and timing of subsequent nodes have also been repaired.
因此,本公开实施例通过在信号反相元件的P型晶体管导通时,降低P型晶体管 的衬底偏压,可以修复由于NBTI效应导致的各信号反相元件的输出信号的上升沿形变,继而有效修复信号时序。Therefore, embodiments of the present disclosure can repair the rising edge deformation of the output signal of each signal inverting element caused by the NBTI effect by reducing the substrate bias of the P-type transistor when the P-type transistor of the signal inverting element is turned on. The signal timing is then effectively repaired.
在本公开的另一个实施例中,为了进一步控制信号时序,触发器电路还可以包括第一反馈电路FB1,第一反馈电路FB1的输入端连接第三节点N3,输出端连接第二节点N2,用于根据时钟信号CLK和互补时钟信号CLKB将第三节点N3的电位反相后反馈至第二节点N2,第一反馈电路FB1包括奇数个信号反相元件。In another embodiment of the present disclosure, in order to further control the signal timing, the flip-flop circuit may further include a first feedback circuit FB1, the input end of the first feedback circuit FB1 is connected to the third node N3, and the output end is connected to the second node N2, The first feedback circuit FB1 is used to invert the potential of the third node N3 and then feed it back to the second node N2 according to the clock signal CLK and the complementary clock signal CLKB. The first feedback circuit FB1 includes an odd number of signal inverting elements.
图6是本公开一个实施例中第一反馈电路的结构示意图。FIG. 6 is a schematic diagram of the structure of a first feedback circuit in an embodiment of the present disclosure.
参考图6,在一个实施例中,第一反馈电路FB1可以包括:Referring to Figure 6, in one embodiment, the first feedback circuit FB1 may include:
第一P型晶体管MP1,源极连接电源电压VDD,栅极连接第三节点N3;The source of the first P-type transistor MP1 is connected to the power supply voltage VDD, and the gate is connected to the third node N3;
第二P型晶体管MP2,源极连接第一P型晶体管MP1的漏极,栅极连接时钟信号CLK,漏极连接第二节点N2;The source of the second P-type transistor MP2 is connected to the drain of the first P-type transistor MP1, the gate is connected to the clock signal CLK, and the drain is connected to the second node N2;
第一N型晶体管MN1,源极接地,栅极连接第三节点N3;The first N-type transistor MN1 has its source connected to ground and its gate connected to the third node N3;
第二N型晶体管MN2,源极连接第一N型晶体管MN1的漏极,栅极连接互补时钟信号CLKB,漏极连接第二节点N2。The source of the second N-type transistor MN2 is connected to the drain of the first N-type transistor MN1, the gate is connected to the complementary clock signal CLKB, and the drain is connected to the second node N2.
在图6所示实施例中,在时钟信号CLK为高电平、互补时钟信号CLKB为低电平时,第二P型晶体管MP2、第二N型晶体管MN2均关断,第一反馈电路FB1不工作。In the embodiment shown in FIG. 6 , when the clock signal CLK is at a high level and the complementary clock signal CLKB is at a low level, both the second P-type transistor MP2 and the second N-type transistor MN2 are turned off, and the first feedback circuit FB1 does not Work.
只有在时钟信号CLK为低电平、互补时钟信号CLKB为高电平时,第二P型晶体管MP2导通、第二N型晶体管MN2导通,第一反馈电路FB1根据第三节点N3的信号对第二节点N2输出信号。Only when the clock signal CLK is low level and the complementary clock signal CLKB is high level, the second P-type transistor MP2 is turned on and the second N-type transistor MN2 is turned on. The first feedback circuit FB1 conducts the signal according to the signal of the third node N3. The second node N2 outputs a signal.
因此,第一反馈电路FB1可以仅在时钟信号CLK为低电平时对第二节点N2输出反馈信号,从而调节第三节点N3的信号与时钟信号CLK的下降沿对齐,调节第三节点N3的信号时序与时钟信号对齐。Therefore, the first feedback circuit FB1 can only output a feedback signal to the second node N2 when the clock signal CLK is low level, thereby adjusting the signal of the third node N3 to be aligned with the falling edge of the clock signal CLK, and adjusting the signal of the third node N3 Timing is aligned with the clock signal.
例如,在时钟信号CLK由高电平转换为低电平(即出现下降沿)时,如果第二节点N2的电压为高电平,经过第二反相器OP2反相,第三节点N3的电压为低电平,此时第一P型晶体管MP1导通,第一N型晶体管MN1关断,第一反馈电路FB1对第二节点N2输出高电平,该高电平与时钟信号CLK的下降沿对齐;如果第二节点N2的电压为低电平,经过第二反相器OP2反相,第三节点N3的电压为高电平,此时第一P型晶体管MP1关断,第一N型晶体管MN1导通,第一反馈电路FB1对第二节点N2输出低电平,该低电平与时钟信号CLK的下降沿对齐。For example, when the clock signal CLK transitions from high level to low level (that is, a falling edge occurs), if the voltage of the second node N2 is high level and is inverted through the second inverter OP2, the voltage of the third node N3 The voltage is low level. At this time, the first P-type transistor MP1 is turned on, the first N-type transistor MN1 is turned off, and the first feedback circuit FB1 outputs a high level to the second node N2. The high level is consistent with the clock signal CLK. Falling edge alignment; if the voltage of the second node N2 is low level, it is inverted through the second inverter OP2, and the voltage of the third node N3 is high level. At this time, the first P-type transistor MP1 is turned off, and the first The N-type transistor MN1 is turned on, and the first feedback circuit FB1 outputs a low level to the second node N2, and the low level is aligned with the falling edge of the clock signal CLK.
为了使第一反馈电路FB1输出到第二节点N2的反馈信号的信号质量不受NBTI效应的影响,在一个实施例中,第一P型晶体管MP1和第二P型晶体管MP2的衬底均可以连接第五偏压提供电路(未示出)。第五偏压提供电路用于在第一P型晶体管MP1和第二P型晶体管MP2导通时,对第一P型晶体管MP1和第二P型晶体管MP2提供第一衬底偏压V1,在第一P型晶体管MP1和第二P型晶体管MP2关断时,对第一P型晶体管MP1和第二P型晶体管MP2提供第二衬底偏压V2。其中,第二衬底偏压V2 例如等于电源电压VDD。In order to prevent the signal quality of the feedback signal output by the first feedback circuit FB1 to the second node N2 from being affected by the NBTI effect, in one embodiment, the substrates of the first P-type transistor MP1 and the second P-type transistor MP2 can be A fifth bias supply circuit (not shown) is connected. The fifth bias supply circuit is used to provide the first substrate bias V1 to the first P-type transistor MP1 and the second P-type transistor MP2 when the first P-type transistor MP1 and the second P-type transistor MP2 are turned on. When the first P-type transistor MP1 and the second P-type transistor MP2 are turned off, the second substrate bias V2 is provided to the first P-type transistor MP1 and the second P-type transistor MP2. Wherein, the second substrate bias voltage V2 is equal to the power supply voltage VDD, for example.
除了图6所示的第一反馈电路FB1,在另一个实施例中,第一反馈电路FB1还可以由串联的奇数个反相器和第一反馈传输门(未示出)实现,第一反馈传输门的两个控制端分别连接时钟信号CLK和互补时钟信号CLKB,以实现与图4所示实施例相同的控制逻辑,即在时钟信号CLK为高电平时,第一反馈电路FB1不输出信号到第二节点N2;在时钟信号CLK为低电平时,第一反馈电路FB1对第二节点N2输出第三节点N3的反相信号,从而调节第二节点N2和第三节点N3的信号时序与时钟信号CLK的下降沿对齐。In addition to the first feedback circuit FB1 shown in FIG6 , in another embodiment, the first feedback circuit FB1 may also be implemented by an odd number of inverters connected in series and a first feedback transmission gate (not shown), wherein two control terminals of the first feedback transmission gate are respectively connected to the clock signal CLK and the complementary clock signal CLKB to implement the same control logic as the embodiment shown in FIG4 , i.e., when the clock signal CLK is at a high level, the first feedback circuit FB1 does not output a signal to the second node N2; when the clock signal CLK is at a low level, the first feedback circuit FB1 outputs an inverted signal of the third node N3 to the second node N2, thereby adjusting the signal timing of the second node N2 and the third node N3 to be aligned with the falling edge of the clock signal CLK.
在另一个实施例中,触发器电路也可以在第四节点N4和第五节点N5之间设置第二反馈电路FB2,以进一步调节触发器电路内部的时序。第二反馈电路FB2的输入端连接第五节点N5,输出端连接第四节点N4,用于根据时钟信号CLK和互补时钟信号CLKB将第五节点N5的电位反相后反馈至第四节点N4,第二反馈电路FB2包括奇数个信号反相元件。In another embodiment, the flip-flop circuit may also provide a second feedback circuit FB2 between the fourth node N4 and the fifth node N5 to further adjust the timing within the flip-flop circuit. The input end of the second feedback circuit FB2 is connected to the fifth node N5, and the output end is connected to the fourth node N4. It is used to invert the potential of the fifth node N5 and then feed it back to the fourth node N4 according to the clock signal CLK and the complementary clock signal CLKB. The second feedback circuit FB2 includes an odd number of signal inverting elements.
需要说明的是,第一反馈电路FB1和第二反馈电路FB2可以分别单独设置,也可以共同设置,本公开对此不作特殊限制。It should be noted that the first feedback circuit FB1 and the second feedback circuit FB2 can be provided separately or jointly, and the present disclosure does not place special restrictions on this.
图7是本公开一个实施例中第二反馈电路的结构示意图。Figure 7 is a schematic structural diagram of a second feedback circuit in an embodiment of the present disclosure.
参考图7,在一个实施例中,第二反馈电路FB2可以包括:Referring to Figure 7, in one embodiment, the second feedback circuit FB2 may include:
第三P型晶体管MP3,源极连接电源电压VDD,栅极连接第五节点N5;The source of the third P-type transistor MP3 is connected to the power supply voltage VDD, and the gate is connected to the fifth node N5;
第四P型晶体管MP4,源极连接第三P型晶体管MP3的漏极,栅极连接互补时钟信号CLKB,漏极连接第四节点N4;The source of the fourth P-type transistor MP4 is connected to the drain of the third P-type transistor MP3, the gate is connected to the complementary clock signal CLKB, and the drain is connected to the fourth node N4;
第三N型晶体管MN3,源极接地,栅极连接第五节点N5;The third N-type transistor MN3 has its source connected to ground and its gate connected to the fifth node N5;
第四N型晶体管MN4,源极连接第三N型晶体管MN3的漏极,栅极连接时钟信号CLK,漏极连接第四节点N4。The source of the fourth N-type transistor MN4 is connected to the drain of the third N-type transistor MN3, the gate is connected to the clock signal CLK, and the drain is connected to the fourth node N4.
第二反馈电路FB2的结构和原理与第一反馈电路FB1类似,用于在时钟信号CLK为低电平、互补时钟信号CLKB高电平时将第五节点N5的信号的反相信号传输到第四节点N4,于此不再赘述。The structure and principle of the second feedback circuit FB2 are similar to the first feedback circuit FB1, and is used to transmit the inverted signal of the signal of the fifth node N5 to the fourth node when the clock signal CLK is low level and the complementary clock signal CLKB is high level. Node N4 will not be described again here.
在一个实施例中,为了第三P型晶体管MP3和第四P型晶体管MP4的衬底均连接第四偏压提供电路34。由于第四偏压提供电路34中的第一衬底偏压V1的控制信号为第五节点N5的信号,第二衬底偏压V2的控制信号为第五节点N5的信号的反相信号,可以实现在第五节点N5的信号为低电平、第三P型晶体管MP3导通时,对第三P型晶体管MP3和第四P型晶体管MP4输入第一衬底偏压V1,在第五节点N5的信号为高电平、第三P型晶体管MP3关断时,对第三P型晶体管MP3和第四P型晶体管MP4输入第二衬底偏压V2,修正第二反馈电路FB2的输出信号由于NBTI效应导致的形变。In one embodiment, the fourth bias supply circuit 34 is connected to the substrates of the third P-type transistor MP3 and the fourth P-type transistor MP4. Since the control signal of the first substrate bias V1 in the fourth bias supply circuit 34 is the signal of the fifth node N5, and the control signal of the second substrate bias V2 is the inverse signal of the signal of the fifth node N5, It can be realized that when the signal of the fifth node N5 is low level and the third P-type transistor MP3 is turned on, the first substrate bias V1 is input to the third P-type transistor MP3 and the fourth P-type transistor MP4. When the signal of the node N5 is high level and the third P-type transistor MP3 is turned off, the second substrate bias V2 is input to the third P-type transistor MP3 and the fourth P-type transistor MP4 to correct the output of the second feedback circuit FB2 The signal is deformed due to the NBTI effect.
与第一反馈电路FB1相同,第二反馈电路FB2也可以由串联的奇数个反相器和第二反馈传输门构成,第二反馈传输门FB2的两个控制端分别连接时钟信号CLK和互补 时钟信号CLKB,用于在时钟信号CLK为低电平、互补时钟信号CLKB高电平时控制第二反馈电路FB2工作。Like the first feedback circuit FB1, the second feedback circuit FB2 can also be composed of an odd number of inverters and a second feedback transmission gate connected in series. The two control terminals of the second feedback transmission gate FB2 are connected to the clock signal CLK and the complementary clock respectively. The signal CLKB is used to control the operation of the second feedback circuit FB2 when the clock signal CLK is at a low level and the complementary clock signal CLKB is at a high level.
通过设置第一反馈电路FB1和第二反馈电路FB2,可以通过时钟信号CLK加快节点之间的信号传输速度,避免和主路信号发生充放电冲突。By setting up the first feedback circuit FB1 and the second feedback circuit FB2, the signal transmission speed between nodes can be accelerated through the clock signal CLK, and charging and discharging conflicts with the main circuit signal can be avoided.
在再一个实施例中,触发器电路可以包括复位电路RST,输入端用于接收复位信号,输出端连接第四节点N4,用于响应复位信号对第四节点N4输出复位电平。In another embodiment, the flip-flop circuit may include a reset circuit RST, the input terminal is used to receive the reset signal, and the output terminal is connected to the fourth node N4, and is used to output a reset level to the fourth node N4 in response to the reset signal.
图8是本公开一个实施例中复位电路的结构示意图。FIG. 8 is a schematic structural diagram of a reset circuit in an embodiment of the present disclosure.
参考图8,复位电路81可以包括第一复位晶体管MNS和第二复位晶体管MPS,第一复位晶体管MNS和第二复位晶体管MPS根据复位电平选择性设置,即第一复位晶体管MNS和第二复位晶体管MPS仅设置一个即可。Referring to FIG. 8 , the reset circuit 81 may include a first reset transistor MNS and a second reset transistor MPS. The first reset transistor MNS and the second reset transistor MPS are selectively set according to the reset level, that is, the first reset transistor MNS and the second reset transistor MPS. It is sufficient to set only one transistor MPS.
当复位电平为低电平时,复位电路81可以包括第一复位晶体管MNS,第一复位晶体管MNS为N型晶体管,第一复位晶体管MNS的源极接地,漏极连接第四节点N4,栅极用于连接第一复位信号RST1,第一复位信号RST1的有效电平为高电平。When the reset level is low, the reset circuit 81 may include a first reset transistor MNS. The first reset transistor MNS is an N-type transistor. The source of the first reset transistor MNS is grounded, the drain is connected to the fourth node N4, and the gate is connected to the ground. It is used to connect the first reset signal RST1, and the effective level of the first reset signal RST1 is high level.
当复位电平为高电平时,复位电路81可以包括第二复位晶体管MPS,第二复位晶体管MPS为P型晶体管,第二复位晶体管MPS的源极连接电源电压VDD,漏极连接第四节点N4,栅极用于连接第二复位信号RST2,第二复位信号RST2的有效电平为低电平。When the reset level is high, the reset circuit 81 may include a second reset transistor MPS. The second reset transistor MPS is a P-type transistor. The source of the second reset transistor MPS is connected to the power supply voltage VDD, and the drain is connected to the fourth node N4. , the gate is used to connect the second reset signal RST2, and the effective level of the second reset signal RST2 is low level.
复位电路81与第一反馈电路FB1、第二反馈电路FB2可以选择性设置,也可以同时设置,本公开对此不作特殊限制。The reset circuit 81 and the first feedback circuit FB1 and the second feedback circuit FB2 can be set selectively or at the same time, and the present disclosure does not place special restrictions on this.
根据本公开的第二方面,提供一种电子设备,包括如上任一实施例所示的触发器电路。According to a second aspect of the present disclosure, an electronic device is provided, comprising a trigger circuit as shown in any of the above embodiments.
应当注意,尽管在上文详细描述中提及了用于动作执行的设备的若干模块或者单元,但是这种划分并非强制性的。实际上,根据本公开的实施方式,上文描述的两个或更多模块或者单元的特征和功能可以在一个模块或者单元中具体化。反之,上文描述的一个模块或者单元的特征和功能可以进一步划分为由多个模块或者单元来具体化。It should be noted that although several modules or units of equipment for action execution are mentioned in the above detailed description, this division is not mandatory. In fact, according to embodiments of the present disclosure, the features and functions of two or more modules or units described above may be embodied in one module or unit. Conversely, the features and functions of one module or unit described above may be further divided into being embodied by multiple modules or units.
本领域技术人员在考虑说明书及实践这里公开的发明后,将容易想到本公开的其它实施方案。本申请旨在涵盖本公开的任何变型、用途或者适应性变化,这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的,本公开的真正范围和构思由权利要求指出。Other embodiments of the disclosure will be readily apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure that follow the general principles of the disclosure and include common knowledge or customary technical means in the technical field that are not disclosed in the disclosure. . It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
工业实用性Industrial Applicability
本公开实施例通过在P型晶体管导通时提高P型晶体管的衬底偏压,可以有效克服由于应力时间增加、恢复时间不足导致的P型晶体管的NBTI效应,校正由于NBTI效应导致的信号变形。Embodiments of the present disclosure can effectively overcome the NBTI effect of the P-type transistor caused by increased stress time and insufficient recovery time by increasing the substrate bias of the P-type transistor when the P-type transistor is turned on, and correct the signal distortion caused by the NBTI effect. .

Claims (15)

  1. 一种触发器电路,包括多个信号反相元件,每个所述信号反相元件的P型晶体管的衬底均对应连接一个偏压提供电路,所述偏压提供电路用于响应对应的所述信号反相元件的输入端信号,在所述信号反相元件中的P型晶体管导通时,对所述P型晶体管提供第一衬底偏压,在所述所述信号反相元件中的P型晶体管未导通时,对所述P型晶体管提供第二衬底偏压,所述第一衬底偏压小于所述第二衬底偏压且大于PN结导通电压,所述信号反相元件用于对输入端信号进行反相。A flip-flop circuit includes a plurality of signal inverting elements. The substrate of the P-type transistor of each signal inverting element is correspondingly connected to a bias voltage providing circuit. The bias voltage providing circuit is used to respond to all corresponding signals. The input signal of the signal inverting element provides a first substrate bias to the P-type transistor when the P-type transistor in the signal inverting element is turned on. In the signal inverting element When the P-type transistor is not turned on, a second substrate bias voltage is provided to the P-type transistor, and the first substrate bias voltage is smaller than the second substrate bias voltage and larger than the PN junction turn-on voltage, and the The signal inverting element is used to invert the input signal.
  2. 如权利要求1所述的触发器电路,其中,每个所述偏压提供电路均包括:The trigger circuit according to claim 1, wherein each of the bias supply circuits comprises:
    第一开关元件,第一端连接所述第一衬底偏压,第二端连接所述偏压提供电路对应的所述信号反相元件中P型晶体管的衬底,控制端连接所述偏压提供电路对应的所述信号反相元件的P型晶体管的栅极;The first switching element has a first terminal connected to the first substrate bias voltage, a second terminal connected to the substrate of the P-type transistor in the signal inverting element corresponding to the bias voltage providing circuit, and a control terminal connected to the bias voltage. voltage provides the gate of the P-type transistor of the signal inverting element corresponding to the circuit;
    第二开关元件,第一端连接所述第二衬底偏压,第二端连接所述第一开关元件的第二端,控制端连接所述偏压提供电路对应的所述信号反相元件的P型晶体管的漏极。The second switching element has a first end connected to the second substrate bias, a second end connected to the second end of the first switching element, and a control end connected to the signal inverting element corresponding to the bias providing circuit. the drain of the P-type transistor.
  3. 如权利要求1或2所述的触发器电路,其中,所述触发器电路包括:The flip-flop circuit of claim 1 or 2, wherein the flip-flop circuit includes:
    第一反相器,输入端为所述触发器电路的输入端,输出端连接第一节点,所述第一反相器中的P型晶体管的衬底连接第一偏压提供电路,所述第一反相器为所述多个信号反相元件之一;The input terminal of the first inverter is the input terminal of the flip-flop circuit, the output terminal is connected to the first node, and the substrate of the P-type transistor in the first inverter is connected to the first bias supply circuit, and the The first inverter is one of the plurality of signal inverting elements;
    第一传输门,第一控制端连接时钟信号,第二控制端连接互补时钟信号,输入端连接所述第一节点,输出端连接第二节点;In the first transmission gate, the first control terminal is connected to the clock signal, the second control terminal is connected to the complementary clock signal, the input terminal is connected to the first node, and the output terminal is connected to the second node;
    第二反相器,输入端连接所述第二节点,输出端连接第三节点,所述第二反相器中的P型晶体管的衬底连接第二偏压提供电路,所述第二反相器为所述多个信号反相元件之一;A second inverter, an input end of which is connected to the second node, an output end of which is connected to a third node, a substrate of a P-type transistor in the second inverter is connected to a second bias supply circuit, and the second inverter is one of the plurality of signal inverting elements;
    第二传输门,第一控制端连接所述互补时钟信号,第二控制端连接所述时钟信号,输入端连接所述第三节点,输出端连接第四节点;In the second transmission gate, the first control terminal is connected to the complementary clock signal, the second control terminal is connected to the clock signal, the input terminal is connected to the third node, and the output terminal is connected to the fourth node;
    第三反相器,输入端连接所述第四节点,输出端连接第五节点,所述第三反相器中的P型晶体管的衬底连接第三偏压提供电路,所述第三反相器为所述多个信号反相元件之一;A third inverter has an input terminal connected to the fourth node and an output terminal connected to a fifth node. The substrate of the P-type transistor in the third inverter is connected to a third bias supply circuit. The third inverter The phaser is one of the plurality of signal inverting elements;
    第四反相器,输入端连接所述第五节点,输出端为所述触发器电路的第一输出端,所述第四反相器中的P型晶体管的衬底连接第四偏压提供电路,所述第四反相器为所述多个信号反相元件之一;The fourth inverter has an input terminal connected to the fifth node, an output terminal being the first output terminal of the flip-flop circuit, and a substrate of the P-type transistor in the fourth inverter connected to a fourth bias voltage supply. circuit, the fourth inverter is one of the plurality of signal inverting elements;
    第五反相器,输入端连接所述第四反相器的输出端,输出端为所述触发器电路的第二输出端,所述第五反相器中的P型晶体管的衬底连接所述第三偏压提供电路,所述第五反相器为所述多个信号反相元件之一。The input terminal of the fifth inverter is connected to the output terminal of the fourth inverter, the output terminal is the second output terminal of the flip-flop circuit, and the substrate of the P-type transistor in the fifth inverter is connected to The third bias voltage providing circuit, the fifth inverter is one of the plurality of signal inverting elements.
  4. 如权利要求3所述的触发器电路,其中,还包括:The flip-flop circuit of claim 3, further comprising:
    第一反馈电路,输入端连接所述第三节点,输出端连接所述第二节点,用于根据时钟信号和互补时钟信号将所述第三节点的电位反相后反馈至所述第二节点,所述第一反馈电路包括奇数个所述信号反相元件。A first feedback circuit, with an input terminal connected to the third node and an output terminal connected to the second node, for inverting the potential of the third node and feeding it back to the second node according to the clock signal and the complementary clock signal. , the first feedback circuit includes an odd number of the signal inverting elements.
  5. 如权利要求4所述的触发器电路,其中,所述第一反馈电路包括:The flip-flop circuit of claim 4, wherein the first feedback circuit includes:
    第一P型晶体管,源极连接电源电压,栅极连接所述第三节点;The first P-type transistor has a source connected to the power supply voltage and a gate connected to the third node;
    第二P型晶体管,源极连接所述第一P型晶体管的漏极,栅极连接所述时钟信号,漏极连接所述第二节点;A second P-type transistor has a source connected to the drain of the first P-type transistor, a gate connected to the clock signal, and a drain connected to the second node;
    第一N型晶体管,源极接地,栅极连接所述第三节点;A first N-type transistor, with a source connected to the ground and a gate connected to the third node;
    第二N型晶体管,源极连接所述第一N型晶体管的漏极,栅极连接所述互补时钟信号,漏极连接所述第二节点。The source of the second N-type transistor is connected to the drain of the first N-type transistor, the gate is connected to the complementary clock signal, and the drain is connected to the second node.
  6. 如权利要求5所述的触发器电路,其中,所述第一P型晶体管和所述第二P型晶体管的衬底均连接第五偏压提供电路。The flip-flop circuit of claim 5, wherein substrates of the first P-type transistor and the second P-type transistor are both connected to a fifth bias supply circuit.
  7. 如权利要求4所述的触发器电路,其中,所述第一反馈电路包括串联的奇数个反相器和第一反馈传输门,所述第一反馈传输门的两个控制端分别连接所述时钟信号和所述互补时钟信号。The flip-flop circuit of claim 4, wherein the first feedback circuit includes an odd number of inverters and a first feedback transmission gate connected in series, and two control terminals of the first feedback transmission gate are respectively connected to the clock signal and the complementary clock signal.
  8. 如权利要求3所述的触发器电路,其中,还包括:The flip-flop circuit of claim 3, further comprising:
    第二反馈电路,输入端连接所述第五节点,输出端连接所述第四节点,用于根据时钟信号和互补时钟信号将所述第五节点的电位反相后反馈至所述第四节点,所述第二反馈电路包括奇数个所述信号反相元件。A second feedback circuit, with an input terminal connected to the fifth node and an output terminal connected to the fourth node, for inverting the potential of the fifth node and then feeding it back to the fourth node according to the clock signal and the complementary clock signal. , the second feedback circuit includes an odd number of the signal inverting elements.
  9. 如权利要求8所述的触发器电路,其中,所述第二反馈电路包括:The flip-flop circuit of claim 8, wherein the second feedback circuit includes:
    第三P型晶体管,源极连接电源电压,栅极连接所述第五节点;The third P-type transistor has its source connected to the power supply voltage and its gate connected to the fifth node;
    第四P型晶体管,源极连接所述第三P型晶体管的漏极,栅极连接所述互补时钟信号,漏极连接所述第四节点;The fourth P-type transistor has a source connected to the drain of the third P-type transistor, a gate connected to the complementary clock signal, and a drain connected to the fourth node;
    第三N型晶体管,源极接地,栅极连接所述第五节点;The third N-type transistor has a source connected to ground and a gate connected to the fifth node;
    第四N型晶体管,源极连接所述第三N型晶体管的漏极,栅极连接所述时钟信号,漏极连接所述第四节点。The source of the fourth N-type transistor is connected to the drain of the third N-type transistor, the gate is connected to the clock signal, and the drain is connected to the fourth node.
  10. 如权利要求9所述的触发器电路,其中,所述第三P型晶体管和所述第四P型晶体管的衬底均连接所述第四偏压提供电路。The flip-flop circuit of claim 9, wherein substrates of the third P-type transistor and the fourth P-type transistor are both connected to the fourth bias supply circuit.
  11. 如权利要求8所述的触发器电路,其中,所述第二反馈电路包括串联的奇数个反相器和第二反馈传输门,所述第二反馈传输门的两个控制端分别连接所述时钟信号和所述互补时钟信号。The flip-flop circuit of claim 8, wherein the second feedback circuit includes an odd number of inverters and a second feedback transmission gate connected in series, and two control terminals of the second feedback transmission gate are respectively connected to the clock signal and the complementary clock signal.
  12. 如权利要求3所述的触发器电路,其中,还包括:The flip-flop circuit of claim 3, further comprising:
    复位电路,输入端用于接收复位信号,输出端连接所述第四节点,用于响应所述复位信号对所述第四节点输出复位电平。A reset circuit has an input terminal for receiving a reset signal, and an output terminal connected to the fourth node, for outputting a reset level to the fourth node in response to the reset signal.
  13. 如权利要求12所述的触发器电路,其中,所述复位电平为低电平,所述复位电路 包括第一复位晶体管,所述第一复位晶体管为N型晶体管,所述第一复位晶体管的源极接地,漏极连接所述第四节点,栅极用于连接第一复位信号。The flip-flop circuit of claim 12, wherein the reset level is a low level, the reset circuit includes a first reset transistor, the first reset transistor is an N-type transistor, and the first reset transistor The source electrode is connected to ground, the drain electrode is connected to the fourth node, and the gate electrode is used to connect the first reset signal.
  14. 如权利要求12所述的触发器电路,其中,所述复位电平为高电平,所述复位电路包括第二复位晶体管,所述第二复位晶体管为P型晶体管,所述第二复位晶体管的源极连接电源电压,漏极连接所述第四节点,栅极用于连接第二复位信号。The flip-flop circuit of claim 12, wherein the reset level is a high level, the reset circuit includes a second reset transistor, the second reset transistor is a P-type transistor, and the second reset transistor The source electrode is connected to the power supply voltage, the drain electrode is connected to the fourth node, and the gate electrode is used to connect the second reset signal.
  15. 一种电子设备,包括如权利要求1-14任一项所述的触发器电路。An electronic device including the flip-flop circuit according to any one of claims 1-14.
PCT/CN2023/070546 2022-09-19 2023-01-04 Flip-flop circuit and electronic device WO2024060469A1 (en)

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CN202211139843.0 2022-09-19
CN202211139843.0A CN117767918A (en) 2022-09-19 2022-09-19 Trigger circuit and electronic device

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6097113A (en) * 1997-10-14 2000-08-01 Mitsubishi Denki Kabushiki Kaisha MOS integrated circuit device operating with low power consumption
CN101729057A (en) * 2008-10-29 2010-06-09 台湾积体电路制造股份有限公司 Dynamic substrate bias system and method for suppressing negative bias temperature instability
CN105897223A (en) * 2016-03-31 2016-08-24 中国人民解放军国防科学技术大学 D trigger resistant to single event upset
CN111656688A (en) * 2018-01-22 2020-09-11 南洋理工大学 Method, circuit and circuit arrangement for setting the width-to-length ratio of a circuit transistor
CN114567291A (en) * 2022-04-28 2022-05-31 深圳比特微电子科技有限公司 D flip-flop, and processor and computing device including the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6097113A (en) * 1997-10-14 2000-08-01 Mitsubishi Denki Kabushiki Kaisha MOS integrated circuit device operating with low power consumption
CN101729057A (en) * 2008-10-29 2010-06-09 台湾积体电路制造股份有限公司 Dynamic substrate bias system and method for suppressing negative bias temperature instability
CN105897223A (en) * 2016-03-31 2016-08-24 中国人民解放军国防科学技术大学 D trigger resistant to single event upset
CN111656688A (en) * 2018-01-22 2020-09-11 南洋理工大学 Method, circuit and circuit arrangement for setting the width-to-length ratio of a circuit transistor
CN114567291A (en) * 2022-04-28 2022-05-31 深圳比特微电子科技有限公司 D flip-flop, and processor and computing device including the same

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