WO2024057735A1 - Dispositif de détection de lumière et appareil électronique - Google Patents

Dispositif de détection de lumière et appareil électronique Download PDF

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Publication number
WO2024057735A1
WO2024057735A1 PCT/JP2023/027431 JP2023027431W WO2024057735A1 WO 2024057735 A1 WO2024057735 A1 WO 2024057735A1 JP 2023027431 W JP2023027431 W JP 2023027431W WO 2024057735 A1 WO2024057735 A1 WO 2024057735A1
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refractive index
light
color filter
high refractive
index structure
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PCT/JP2023/027431
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English (en)
Japanese (ja)
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博章 高瀬
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ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2024057735A1 publication Critical patent/WO2024057735A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

Definitions

  • This disclosure relates to a light detection device and an electronic device.
  • a photodetection device has been proposed that has a partition between color filters and made of a material with a refractive index lower than that of the color filter (see, for example, Patent Document 1).
  • the photodetection device described in Patent Document 1 light is reflected at the interface between the color filter and the partition wall, and the reflected light is caused to proceed in the direction (inner side) of the photoelectric conversion section corresponding to the color filter. , suppresses light incident on a color filter from entering an adjacent color filter, thereby suppressing optical color mixture.
  • An object of the present disclosure is to provide a photodetector and an electronic device that can suppress optical color mixing caused by light reflected on partitions between color filters.
  • the photodetection device of the present disclosure includes (a) a semiconductor substrate on which a plurality of photoelectric conversion parts are formed, (b) a plurality of color filters arranged on a light incident surface side of the semiconductor substrate, and a plurality of color filters arranged between the color filters. , a color filter layer having a partition made of a material with a lower refractive index than the color filter, (c) a plurality of microlenses arranged on the light incident surface side of the color filter layer, and (d) light condensing by the microlenses.
  • the high refractive index structure is made of a material having a higher refractive index than the member in contact with the light incident surface of the high refractive index structure; The gist is to become.
  • the electronic device of the present disclosure includes (a) a semiconductor substrate on which a plurality of photoelectric conversion sections are formed, (b) a plurality of color filters disposed on a light incident surface side of the semiconductor substrate, and a color filter disposed between the color filters.
  • a color filter layer having a partition made of a material with a lower refractive index than the filter (c) a plurality of microlenses arranged on the light incident surface side of the color filter layer, (d) and light condensed by the microlenses.
  • the high refractive index structure includes a photodetector made of a material having a higher refractive index than the member in contact with the light incident surface of the high refractive index structure. The main point is to be prepared.
  • FIG. 1 is a diagram showing the overall configuration of a solid-state imaging device according to a first embodiment.
  • 2 is a diagram illustrating a cross-sectional configuration of the solid-state imaging device taken along line AA in FIG. 1.
  • FIG. 3 is a diagram showing a cross-sectional configuration of a color filter layer taken along line BB in FIG. 2.
  • FIG. 3 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure. It is a figure showing the whole structure of a solid-state imaging device when a high refractive index structure is omitted.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a planar configuration of a color filter layer and a high refractive index structure according to a modification.
  • FIG. 7 is a diagram showing a cross-sectional configuration of a solid-state imaging device according to a modification.
  • FIG. 7 is a diagram showing a cross-sectional configuration of a solid-state imaging device according to a modification.
  • FIG. 7 is a diagram showing a cross-sectional configuration of a solid-state imaging device according to a modification.
  • FIG. 7 is a diagram showing a cross-sectional configuration of a solid-state imaging device according to a modification.
  • FIG. 7 is a diagram showing a cross-sectional configuration of a solid-state imaging device according to a modification.
  • FIG. 7 is a diagram showing a cross-sectional configuration of a solid-state imaging device according to a modification.
  • FIG. 7 is a diagram showing a cross-sectional configuration of a solid-state imaging device according to a modification. It is a figure which shows the planar structure of the color filter layer based on a modification. It is a figure which shows the planar structure of the color filter layer based on a modification. It is a figure which shows the planar structure of the color filter layer based on a modification. It is a figure which shows the planar structure of the color filter layer based on a modification. It is a figure which shows the planar structure of the color filter layer based on a modification. It is a figure which shows the planar structure of the color filter layer based on a modification. It is a figure which shows the planar structure of the color filter layer based on a modification. It is a figure which shows the planar structure of the color filter layer based on a modification. It is a figure which shows the planar structure of the color filter layer based on a modification.
  • FIG. 7 is a diagram showing a cross-sectional configuration of a solid-state imaging device according to a modification.
  • FIG. 3 is a diagram showing a cross-sectional configuration of a solid-state imaging device according to a second embodiment.
  • 35 is a diagram showing a cross-sectional configuration of the solid-state imaging device taken along line CC in FIG. 34.
  • FIG. It is a figure showing the whole structure of a solid-state imaging device when a high refractive index structure is omitted.
  • FIG. 3 is a diagram showing the overall configuration of an electronic device according to a third embodiment.
  • FIGS. 1 to 37 An example of a photodetection device and an electronic device according to an embodiment of the present disclosure will be described below with reference to FIGS. 1 to 37. Embodiments of the present disclosure will be described in the following order. Note that the present disclosure is not limited to the following examples. Furthermore, the effects described in this specification are merely examples and are not limiting, and other effects may also be present.
  • First embodiment Solid-state imaging device 1-1 Overall configuration of solid-state imaging device 1-2 Configuration of main parts 1-3 Modification example 2. Second embodiment: Solid-state imaging device 2-1 Configuration of main parts 2-2 Modification example 3. Third embodiment: Application example to electronic equipment
  • FIG. 1 is a diagram showing the overall configuration of a solid-state imaging device 1 according to the first embodiment.
  • the solid-state imaging device 1 in FIG. 1 is a back-illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor.
  • CMOS Complementary Metal Oxide Semiconductor
  • the solid-state imaging device 1 (1002) captures image light (incident light) from a subject through a lens group 1001, and calculates the amount of incident light formed on the imaging surface in pixel units.
  • the solid-state imaging device 1 includes a pixel region 2, a vertical drive circuit 3, a column signal processing circuit 4, a horizontal drive circuit 5, an output circuit 6, and a control circuit 7. .
  • the pixel area 2 has a plurality of pixels 8 arranged in a two-dimensional array.
  • the pixel 8 includes the photoelectric conversion section 19 shown in FIG. 2 and a plurality of pixel transistors. Examples of the plurality of pixel transistors include four MOS transistors including a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor.
  • the vertical drive circuit 3 is configured by, for example, a shift register, selects a desired pixel drive wiring 9, supplies pulses for driving the pixels 8 to the selected pixel drive wiring 9, and drives each pixel 8 in rows.
  • the vertical drive circuit 3 sequentially selectively scans each pixel 8 in the pixel region 2 in the vertical direction row by row, and generates a pixel signal based on the signal charge generated in the photoelectric conversion section 19 of each pixel 8 according to the amount of light received. , are supplied to the column signal processing circuit 4 through the vertical signal line 10.
  • the column signal processing circuit 4 is arranged, for example, for each column of pixels 8, and performs signal processing such as noise removal on the signals output from the pixels 8 of one row for each pixel column.
  • the column signal processing circuit 4 performs signal processing such as CDS (Correlated Double Sampling) and AD (Analog Digital) conversion to remove fixed pattern noise specific to pixels.
  • the horizontal drive circuit 5 is configured by, for example, a shift register, and sequentially outputs horizontal scanning pulses to the column signal processing circuits 4 to select each of the column signal processing circuits 4 in turn, and selects each of the column signal processing circuits 4 from each of the column signal processing circuits 4 in turn.
  • the pixel signal subjected to signal processing is output to the horizontal signal line 11.
  • the output circuit 6 performs signal processing on pixel signals sequentially supplied from each of the column signal processing circuits 4 through the horizontal signal line 11, and outputs the processed pixel signals.
  • signal processing for example, buffering, black level adjustment, column variation correction, various digital signal processing, etc. can be used.
  • the control circuit 7 generates clock signals and control signals that serve as operating standards for the vertical drive circuit 3, column signal processing circuit 4, horizontal drive circuit 5, etc., based on the vertical synchronization signal, horizontal synchronization signal, and master clock signal. generate. Then, the control circuit 7 outputs the generated clock signal and control signal to the vertical drive circuit 3, column signal processing circuit 4, horizontal drive circuit 5, and the like.
  • FIG. 2 is a diagram showing a cross-sectional configuration of the solid-state imaging device 1 taken along line AA in FIG.
  • the solid-state imaging device 1 includes a light-receiving layer 15 in which a semiconductor substrate 12, an insulating film 13, and a planarization film 14 are laminated in this order. Further, on the surface of the light-receiving layer 15 on the flattening film 14 side (hereinafter also referred to as "back surface S1"), a color filter layer 16 and a microlens array 17 are arranged in this order. Further, a wiring layer 18 is arranged on the surface of the light-receiving layer 15 on the semiconductor substrate 12 side (hereinafter also referred to as "surface S2").
  • the semiconductor substrate 12 is made of, for example, a silicon (Si) substrate.
  • a photoelectric conversion section 19 is formed in each region of each pixel 8 on the semiconductor substrate 12 . That is, a plurality of photoelectric conversion units 19 are arranged in a two-dimensional array on the semiconductor substrate 12.
  • the photoelectric conversion unit 19 constitutes a photodiode using a pn junction, and generates charges according to the amount of received light. Further, the photoelectric conversion unit 19 accumulates charges generated by photoelectric conversion in the capacitance generated at the pn junction.
  • trench portions 20 are formed in the semiconductor substrate 12 in all regions between adjacent photoelectric conversion portions 19 . That is, the trench portions 20 are formed in a lattice shape so as to surround each of the photoelectric conversion portions 19 . In FIG. 2, a case is illustrated in which the trench portion 20 is configured to penetrate from the light incident surface (hereinafter also referred to as "back surface S3" side of the semiconductor substrate 12 to the front surface S2 side.
  • the insulating film 13 is disposed on the back surface S3 side of the semiconductor substrate 12, and continuously covers the entire back surface S3. Furthermore, the insulating film 13 is embedded inside the trench portion 20 .
  • the planarizing film 14 is disposed on the light incident surface (hereinafter also referred to as "back surface S4") side of the insulating film 13, and continuously covers the back surface S4 so that the back surface S1 of the light-receiving layer 15 is flat.
  • silicon oxide (SiO 2 ) or silicon nitride (SiN) can be used, for example.
  • the color filter layer 16 is arranged on the back surface S1 side of the flattening film 14, and has a plurality of color filters 21 arranged in a two-dimensional array so as to correspond to each pixel 8. That is, one color filter 21 is arranged for one photoelectric conversion section 19.
  • the plurality of color filters 21 include a plurality of types of color filters (that is, color filters with different transmission characteristics) that transmit only light of different predetermined wavelengths. For example, as shown in FIG. 3, there are an R filter 21 R that transmits red light, a G filter 21 G that transmits green light, and a B filter 21 B that transmits blue light. Thereby, each of the color filters 21 transmits light of a predetermined wavelength according to its transmission characteristics, and causes the transmitted light to enter the corresponding photoelectric conversion section 19.
  • FIG. 3 is a diagram showing a cross-sectional configuration of the color filter layer 16 taken along line BB in FIG.
  • the color filter layer 16 is constructed by using 4 ⁇ 4 color filters 21 as repeating units, and the repeating units are arranged in the row direction and the column direction.
  • each of the 2 ⁇ 2 color filters 21 on the upper right is a B filter 21 B
  • each of the 2 ⁇ 2 color filters 21 on the lower left is an R filter 21 R
  • the 2 ⁇ 2 color filter 21 on the upper left is a B filter 21 B.
  • the color filter 21 and the 2 ⁇ 2 color filter 21 at the bottom right are each a G filter 21G .
  • a color resist having a refractive index of 1.4 to 1.9 can be used as the material of the color filter 21, for example.
  • each of the color filters 21 is arranged at a position where pupil correction has been performed. That is, as one goes from the center of the effective pixel area toward the end, the center of the color filter 21 when viewed from the thickness direction of the semiconductor substrate 12 (when viewed from above) becomes the photoelectric conversion area corresponding to the color filter 21. It is shifted from the center of the portion 19 toward the center of the effective pixel area.
  • the color filter 21 By arranging the color filter 21 at a pupil-corrected position, the light transmitted through the color filter 21 can be appropriately incident on the corresponding photoelectric conversion unit 19 on the end side (high image height side) of the effective pixel area.
  • partition wall portions 22 are arranged in all areas between adjacent color filters 21. That is, the partition wall portions 22 are formed in a lattice shape so as to surround each color filter 21 .
  • FIG. 2 a case is illustrated in which the partition wall portion 22 is continuous from the light incident surface (hereinafter also referred to as "back surface S5") side of the color filter layer 16 to the opposite surface side.
  • a material having a lower refractive index than the color filter 21 can be used.
  • a low refractive index resin having a refractive index of 1.0 to 1.2 may be used.
  • a waveguide can be configured with the color filter 21 as the core and the partition wall 22 as the cladding, and the light that enters the color filter 21 from the back surface S5 is propagated within the color filter 21 while being confined within the color filter 21.
  • the light can be emitted to the flattening film 14 side. Further, it is possible to suppress the light inside the color filter 21 from entering into the adjacent color filter 21, and it is possible to suppress optical color mixture.
  • the microlens array 17 is arranged at a flat bottom part 23 arranged on the back surface S5 side (light entrance surface side) of the color filter layer 16, and on the light entrance surface (hereinafter also referred to as "back surface S6") side of the bottom part 23. It has a plurality of microlenses 24.
  • the microlenses 24 are arranged in a two-dimensional array so as to correspond to each pixel 8. That is, one microlens 24 is arranged for one photoelectric conversion section 19. Thereby, each of the microlenses 24 collects image light (incident light) from the subject, and causes the collected incident light to enter the corresponding photoelectric conversion unit 19 via the color filter 21 .
  • image light incident light
  • a case is illustrated in which a plano-convex lens whose bottom portion 23 is flat is used as the microlens 24.
  • the bottom portion 23 and the microlens 24 are integrally formed of the same material.
  • silicon oxide (SiO 2 ) having a refractive index of about 1.4 can be used as the material for the bottom portion 23 and the microlens 24.
  • each of the microlenses 24 is arranged at a position where pupil correction has been performed. That is, from the center of the effective pixel area toward the end, the center of the microlens 24 when viewed from the thickness direction of the semiconductor substrate 12 (when viewed from above) becomes the photoelectric conversion area corresponding to the microlens 24. It is shifted from the center of the portion 19 toward the center of the effective pixel area.
  • the pupil-corrected position the collected light can be appropriately incident on the corresponding color filter 21 and photoelectric conversion unit 19 on the end side of the effective pixel area, and the quantum efficiency QE can be improved.
  • high refractive index structures 25 are arranged in a region directly above the R filter 21R , on each optical path of the light condensed by the microlens 24. That is, as shown in FIG. 4, one high refractive index structure 25 is arranged for one R filter 21R .
  • Each of the high refractive index structures 25 largely refracts the light focused by the microlens 24 toward the semiconductor substrate 12 side (lower side in FIG. 2), and converts the focused light into a photoelectric converter corresponding to the microlens 24. Proceed to section 19.
  • FIG. 4 is a diagram showing a planar configuration of the color filter layer 16 and the high refractive index structure 25.
  • the center of the high refractive index structure 25 when viewed from the thickness direction of the semiconductor substrate 12 (when viewed from above) was located at the same position as the center of the microlens 24 corresponding to the high refractive index structure 25.
  • the planar shape of the high refractive index structure 25 when viewed from above is circular.
  • the diameter of the circle is, for example, such that the light condensed by the microlens 24, that is, the light that travels toward one point in an inverted cone shape, is formed on the light incidence surface (hereinafter also referred to as "back surface S7") of the high refractive index structure 25.
  • the cross-sectional shape of the high refractive index structure 25 in a cross section perpendicular to the light incident surface (back surface S3) of the semiconductor substrate 12 is a rectangular shape with a constant width.
  • the high refractive index structure 25 is a single-layer structure.
  • the material of the high refractive index structure 25 for example, a material having a higher refractive index than the member in contact with the back surface S7 (light incident surface) of the high refractive index structure 25 can be adopted.
  • titanium oxide (TiO 2 ), tantalum oxide (Ta 2 O 5 ), or silicon nitride (SiN) having a refractive index of about 2.1 can be used.
  • the R filter 21 R can be said to be a first color filter that transmits light having a peak wavelength in a wavelength range (640 to 770 nm) equal to or greater than a predetermined wavelength (e.g., 600 nm) of the incident light.
  • the G filter 21 G and the B filter 21 B can be said to be second color filters that transmit light having a peak wavelength in a wavelength range (490 to 550 nm, 430 to 490 nm) less than the predetermined wavelength (600 nm) of the incident light. Therefore, it can be said that the high refractive index structure 25 is disposed only on the light incident surface side of the first color filter out of the first and second color filters.
  • the wiring layer 18 is disposed on the surface S2 side of the semiconductor substrate 12.
  • the wiring layer 18 has an interlayer insulating film and wiring (not shown) stacked in multiple layers with the interlayer insulating film interposed therebetween.
  • the wiring layer 18 drives the pixel transistors of each pixel 8 via the multiple layers of wiring.
  • the solid-state imaging device 1 having the above configuration, light is irradiated from the back surface S3 side of the semiconductor substrate 12, the irradiated light is transmitted through the microlens 24 and the color filter 21, and the transmitted light is photoelectrically converted by the photoelectric converter 19.
  • the signal charge is generated by conversion.
  • the generated signal charge is then output as a pixel signal from the vertical signal line 10 of FIG. 1 formed by the wiring of the wiring layer 18.
  • the incident angle (CRA) of the light L becomes large. Therefore, for example, as shown in FIG.
  • the incident angle of the light L increases, so that the light L traveling inside the color filter 21 reaches the outer peripheral part of the color filter 21.
  • the reflected light L reaches the partition wall portion 22 and is reflected, there is a possibility that the reflected light L passes through the color filter 21 to the opposite side (to the right in FIG. 5). Therefore, the reflected light L leaks into the photoelectric conversion unit 19 (hereinafter also referred to as "adjacent photoelectric conversion unit 19a") of the pixel 8a located in the direction of the reflection destination (rightward in FIG. 5), causing optical color mixture. could have occurred. Furthermore, there was a possibility that the quantum efficiency QE would decrease due to the leaked light L.
  • the high refractive index structure 25 is arranged on the optical path of the light L collected by the microlens 24. Therefore, the light L focused by the microlens 24 can be largely refracted toward the semiconductor substrate 12 side (lower side in FIG. 2) by the high refractive index structure 25, and the incident position of the light L to the color filter 21 can be can be shifted to the side opposite to the traveling direction of the light L (to the right in FIG. 2).
  • the distance between the incident position of the light L and the outer periphery of the color filter 21 can be increased, the light L traveling inside the color filter 21 can be suppressed from reaching the outer periphery of the color filter 21, and the partition wall It is possible to suppress the light from being reflected by the portion 22, and it is possible to suppress the light L from traveling inside the color filter 21 to the opposite side (the right side in FIG. 2). As a result, it is possible to suppress the reflected light L from leaking into the adjacent photoelectric conversion section 19a, and it is possible to suppress the occurrence of optical color mixture due to the leaked light L. That is, it is possible to suppress optical color mixing caused by the light L reflected by the partition wall 22 between the color filters 21.
  • the pupil correction can prevent the light L from passing through the adjacent photoelectric conversion unit 19a due to the fact that the color filter 21 partially overlaps the adjacent photoelectric conversion unit 19a in a plan view. It is possible to suppress an increase in the amount of reflected light L leaking into the photoelectric conversion section 19a.
  • the light focused by the microlens 24 has a different spot diameter for each wavelength range.
  • light in a long wavelength range for example, red light
  • a short wavelength range for example, green light, blue light
  • the red light traveling through the R filter 21 R has a wider width and comes into contact with the partition wall 22 more easily than the green light traveling through the G filter 21 G or the blue light traveling through the R filter 21 R. It is easy to leak into the adjacent photoelectric conversion section 19a. Therefore, the sensitivity of the green pixel Gr in the row including the red pixel becomes higher than the sensitivity of the green pixel Gb in the row including the blue pixel, increasing the Gr-Gb sensitivity difference and possibly degrading the image quality.
  • the solid-state imaging device 1 when the pixel 8 is a fine pixel, the spot diameter of the red light cannot be made sufficiently small relative to the pixel size. Therefore, there is a high possibility that the red light traveling through the R filter 21 R comes into contact with the partition wall 22, which increases the Gr-Gb sensitivity difference and further deteriorates the image quality.
  • the high refractive index structure 25 is arranged in the region of the bottom portion 23 directly above the R filter 21 R. Therefore, leakage of light from the R filter 21R can be suppressed, the Gr-Gb sensitivity difference can be reduced, and deterioration in image quality can be suppressed. Furthermore, even when the pixel 8 is a fine pixel, it is possible to suppress the red light traveling through the R filter 21 R from coming into contact with the partition wall portion 22, thereby reducing the Gr-Gb sensitivity difference and suppressing deterioration in image quality.
  • the planar shape of the high refractive index structure 25 is circular when viewed from the thickness direction of the semiconductor substrate 12 (when viewed from above);
  • Other configurations may also be employed.
  • the shape may be a square or a diamond.
  • one high refractive index structure 25 is provided for one photoelectric conversion unit 19.
  • FIGS. 8, 9, and 10 one high refractive index structure 25 shared by four photoelectric conversion units 19 may be arranged.
  • FIG. 8 illustrates a case where the planar shape of the high refractive index structure 25 is circular, similarly, FIG. 9 illustrates a case where it is a quadrilateral, and FIG. 10 illustrates a case where it is a rhombus.
  • FIG. 11 an example was shown in which the high refractive index structure 25 is arranged only on the back surface S5 side of the R filter 21R , but other configurations can also be adopted.
  • FIG. 11, FIG. 12, FIG. 13, FIG. 14, FIG. 15, and FIG. R , G filter 21 G , B filter 21 B may be arranged on the back surface S5 side of each.
  • FIG. 11 FIG. 12, FIG. 13, FIG. 14, FIG. 15, and FIG. R , G filter 21 G , B filter 21 B
  • FIG. 17 illustrates a case where the high refractive index structures 25 are arranged so that one high refractive index structure 25 covers the entire back surface S5 of the color filter layer 16.
  • the cross-sectional shape of the high refractive index structure 25 in the cross section perpendicular to the back surface S3 of the semiconductor substrate 12 is rectangular, but other configurations may be adopted. You can also.
  • the cross-sectional shape of the high refractive index structure 25 may be tapered such that the width becomes narrower toward the back surface S7 (light incident surface) of the high refractive index structure 25.
  • the cross-sectional shape of the high refractive index structure 25 may be tapered such that the width becomes wider toward the back surface S7 (light incident surface) side of the high refractive index structure 25. good.
  • a waveguide can be constructed in which the high refractive index structure 25 is the core and the bottom 23 around the high refractive index structure 25 is the cladding.
  • the waveguide allows light to be focused at the center of the photoelectric conversion section 19.
  • the high refractive index structure 25 is formed directly above the back surface S5 of the color filter 21, but other configurations may also be adopted.
  • the high refractive index structure 25 may be arranged at a position away from the back surface S5 (light incident surface) of the color filter 21 toward the microlens 24.
  • the high refractive index structure 25 is arranged inside the bottom 23, and the bottom 23 is placed on the back surface S7 side of the high refractive index structure 25 and between the high refractive index structure 25 and the R filter 21R .
  • a layer made of a material for example, silicon oxide (SiO 2 )
  • an antireflection film in which a layer of the material of the bottom part 23, a high refractive index structure 25, and a layer of the material of the bottom part 23 are laminated can be formed in the area directly above the R filter 21R, and the antireflection film and the R filter It is possible to prevent light from being reflected at the interface with 21R , and it is possible to transmit light in the entire wavelength range through the interface.
  • a stopper film 26 is provided that covers the back surface S5 (light incident surface) of the color filter 21, and a high refractive index structure 25 is arranged directly above the back surface S8 (light incident surface) of the stopper film 26. You can also use it as Thereby, the stopper film 26 can function as an etching stopper in the process of forming the high refractive index structure 25.
  • the stopper film 26 for example, silicon oxide (SiO 2 ) or silicon nitride (SiN) can be used.
  • the high refractive index structure 25 may be arranged inside the color filter 21. In FIG. 22, a case is illustrated in which a layer made of the material of the color filter 21 (for example, color resist) is located on the back surface S7 side of the high refractive index structure 25.
  • the high refractive index structure 25 is a single-layer structure, but other structures can also be adopted.
  • the high refractive index structure 25 may be a multilayer structure including two or more layers having different refractive indexes.
  • the high refractive index structure 25 can function as an antireflection film, and light can be prevented from being reflected at the interface between the antireflection film (high refractive index structure 25) and the R filter 21 R. Light in the entire wavelength range can be transmitted through the interface.
  • FIG. 23 the high refractive index structure 25 may be a multilayer structure including two or more layers having different refractive indexes.
  • the high refractive index structure 25 has a three-layer structure, in which a layer of titanium oxide (TiO 2 ), a layer of silicon nitride (SiN ) and a layer of titanium oxide (TiO 2 ) are stacked.
  • the color filters 21 may be arranged using an arrangement other than m ⁇ m as a repeating unit.
  • the color filter 21 is an RGB filter including the R filter 21 R , the G filter 21 G and the B filter 21 B , but other configurations may be adopted. You can also do that.
  • an optical filter may be used that includes any one of a C filter 21 C , an M filter 21 M , a Y filter 21 Y , and a W filter 21 W.
  • FIGS. 28, 29, 30, 31, and 32 an optical filter may be used that includes any one of a C filter 21 C , an M filter 21 M , a Y filter 21 Y , and a W filter 21 W.
  • FIGS. 28 illustrates a case where a CMY filter is configured
  • FIG. 29 illustrates a case where a CMYG filter is configured
  • FIGS. 30 and 31 illustrate a case where an RGBCMY filter is configured
  • FIG. 32 illustrates a case where an RGBW filter is configured.
  • one microlens 24 is arranged for one photoelectric conversion unit 19, but other configurations may also be adopted.
  • one microlens 24 may be arranged for two or more photoelectric conversion units 19.
  • the photoelectric conversion unit 19 shown in FIG. 2 is divided into two parts, and one microlens 24 is arranged for two photoelectric conversion units 19. Thereby, the distance to the subject can be calculated based on the difference between the signal charges of the two photoelectric conversion units 19.
  • the high refractive index structure 25 is arranged only in the region directly above the R filter 21 R of the bottom portion 23, and the high refractive index structure 25 is arranged in the region directly above the G filter 21 G and the B filter 21 B.
  • the difference in sensitivity between the same colors can be reduced between the photoelectric conversion units 19 corresponding to the G filter 21G and between the photoelectric conversion units 19 corresponding to the B filter 21B. Therefore, it is possible to suppress deterioration of the separation ratio in green and blue.
  • FIG. 34 is a diagram showing a cross-sectional configuration of the solid-state imaging device 1 according to the second embodiment.
  • FIG. 35 is a diagram showing a cross-sectional configuration of the solid-state imaging device 1 taken along line CC in FIG. 34.
  • parts corresponding to those in FIGS. 2 and 4 are denoted by the same reference numerals, and redundant explanation will be omitted.
  • the second embodiment differs from the first embodiment in that, as shown in FIGS. 34 and 35, the color filter layer 16 shown in FIG. 2 is omitted.
  • the microlens array 17 is arranged on the back surface S1 side of the flattening film 14. Further, the high refractive index structures 25 are arranged in the bottom part 23 of the microlens array 17, in the area directly above the flattening film 14, and on the optical path of the light focused by the microlenses 24. has been done.
  • the incidence angle (CRA) of the light L becomes large at the end side (high image height side) of the effective pixel region. Therefore, for example, as shown in FIG. 36, when the high refractive index structure 25 is omitted, the light L is directly incident on the photoelectric conversion unit 19, and the light L traveling in the photoelectric conversion unit 19 reaches the outer periphery of the photoelectric conversion unit 19, and the light L transmits through the trench portion 20, which may cause optical color mixing. In addition, the quantum efficiency QE may decrease due to the transmission of the light L.
  • the high refractive index structure 25 is disposed on the rear surface S1 side of the planarization film 14.
  • the light L collected by the microlens 24 can be largely refracted by the high refractive index structure 25 toward the semiconductor substrate 12 side (the lower side in FIG. 34), and the incident position of the light L on the photoelectric conversion unit 19 can be shifted to the opposite side to the traveling direction of the light L (the right side in FIG. 34). Therefore, the distance between the incident position of the light L and the outer periphery of the photoelectric conversion unit 19 (the left end in FIG. 34) can be increased, and the light L traveling inside the photoelectric conversion unit 19 can be more reliably photoelectrically converted (absorbed) by the photoelectric conversion unit 19.
  • the light L can be suppressed from reaching the outer periphery of the photoelectric conversion unit 19, the light L can be suppressed from passing through the trench portion 20, and the occurrence of optical color mixing can be suppressed.
  • the decrease in quantum efficiency QE due to the transmitted light L can be suppressed.
  • the solid-state imaging device 1 employs the various configurations described in the modifications (1), (2), and (4) to (6) of the first embodiment. You can also do that.
  • the present technology can also be applied to photodetection devices in general, including a ranging sensor that measures distance, also called a ToF (Time of Flight) sensor. can.
  • a distance measurement sensor emits illumination light toward an object, detects the reflected light that is reflected back from the object's surface, and measures the flight from the time the illumination light is emitted until the reflected light is received. This is a sensor that calculates the distance to an object based on time.
  • the structure of the pixel 8 described above can be adopted.
  • FIG. 37 is a diagram illustrating an example of a schematic configuration of an imaging device (video camera, digital still camera, etc.) as an electronic device to which the present technology is applied.
  • the imaging device 1000 includes a lens group 1001, a solid-state imaging device 1002 (solid-state imaging device 1 according to the first embodiment), a DSP (Digital Signal Processor) circuit 1003, and a frame memory 1004. , a monitor 1005, and a memory 1006.
  • DSP circuit 1003, frame memory 1004, monitor 1005, and memory 1006 are interconnected via bus line 1007.
  • a lens group 1001 guides incident light (image light) from a subject to a solid-state imaging device 1002, and forms an image on a light entrance surface (pixel region) of the solid-state imaging device 1002.
  • the solid-state imaging device 1002 is composed of the CMOS image sensor of the first embodiment described above.
  • the solid-state imaging device 1002 converts the amount of incident light that is imaged on the light entrance surface by the lens group 1001 into an electrical signal for each pixel, and supplies the electrical signal to the DSP circuit 1003 as a pixel signal.
  • the DSP circuit 1003 performs predetermined image processing on pixel signals supplied from the solid-state imaging device 1002.
  • the DSP circuit 1003 supplies the image signal after image processing to the frame memory 1004 in units of frames, and causes the frame memory 1004 to temporarily store the image signal.
  • the monitor 1005 is composed of a panel display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel.
  • the monitor 1005 displays an image (moving image) of the subject based on pixel signals for each frame temporarily stored in the frame memory 1004.
  • the memory 1006 consists of a DVD, flash memory, etc.
  • the memory 1006 reads and records pixel signals in units of frames temporarily stored in the frame memory 1004.
  • the electronic device to which the solid-state imaging device 1 can be applied is not limited to the imaging device 1000, but can also be applied to other electronic devices.
  • the solid-state imaging device 1 according to the first embodiment is used as the solid-state imaging device 1002
  • other configurations may also be adopted.
  • a configuration may be adopted in which other photodetecting devices to which the present technology is applied, such as the solid-state imaging device 1 according to the second embodiment and the solid-state imaging device 1 according to modifications of the first and second embodiments. .
  • the present disclosure may have the following configuration.
  • a semiconductor substrate on which a plurality of photoelectric conversion parts are formed a color filter layer having a plurality of color filters disposed on the light incident surface side of the semiconductor substrate, and a partition portion disposed between the color filters and made of a material having a refractive index lower than that of the color filters; a plurality of microlenses arranged on the light incident surface side of the color filter layer; a high refractive index structure disposed on the optical path of the light focused by the microlens,
  • the high refractive index structure is made of a material having a higher refractive index than a member in contact with a light incident surface of the high refractive index structure.
  • the photodetecting device (2) The photodetecting device according to (1), wherein the high refractive index structure is disposed on the light incident surface side of the color filter.
  • the color filter includes a first color filter that transmits light having a peak wavelength in a wavelength range above a predetermined wavelength of the incident light, and a first color filter that transmits light having a peak wavelength in a wavelength range of less than the predetermined wavelength of the incident light. a second color filter that transmits light having The light according to (2) above, wherein the high refractive index structure is disposed only on the light incident surface side of the first color filter of the first color filter and the second color filter. Detection device.
  • the first color filter is a color filter that transmits red light.
  • the photodetecting device according to any one of (1) to (7) above, which has a wide, tapered shape.
  • the photodetecting device according to any one of (1) to (8), wherein the high refractive index structure is a multilayer structure including two or more layers having different refractive indexes.
  • the photodetector according to any one of (1) to (9), wherein the high refractive index structure has a circular, square, or rhombic planar shape when viewed from the thickness direction of the semiconductor substrate.
  • each of the color filters is arranged at a position where pupil correction has been performed.
  • the high refractive index structure includes a photodetector made of a material having a higher refractive index than a member in contact with a light incident surface of the high refractive index structure.
  • SYMBOLS 1 Solid-state imaging device, 2... Pixel area, 3... Vertical drive circuit, 4... Column signal processing circuit, 5... Horizontal drive circuit, 6... Output circuit, 7... Control circuit, 8... Pixel, 9... Pixel drive wiring, DESCRIPTION OF SYMBOLS 10... Vertical signal line, 11... Horizontal signal line, 12... Semiconductor substrate, 13... Insulating film, 14... Flattening film, 15... Light receiving layer, 16... Color filter layer, 17... Microlens array, 18... Wiring layer, 19... Photoelectric conversion section, 19a... Photoelectric conversion section, 20... Trench section, 21... Color filter, 21 B ... B filter, 21 C ... C filter, 21 G ... G filter, 21 M ... M filter, 21 R ...
  • R Filter 21 W ...W filter, 21 Y ...Y filter, 22... partition wall, 23... bottom, 24... microlens, 25... high refractive index structure, 26... stopper film, 1000... imaging device, 1001... lens group , 1002...Solid-state imaging device, 1003...DSP circuit 1004...Frame memory, 1005...Monitor, 1006...Memory, 1007...Bus line

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Filters (AREA)

Abstract

La présente invention concerne un dispositif de détection de lumière pouvant supprimer le mélange optique des couleurs en raison de la lumière réfléchie par une partie de paroi de séparation entre des filtres de couleur. Plus précisément, ce dispositif de détection de lumière possède une configuration qui comprend : un substrat semi-conducteur pourvu d'une pluralité de parties de conversion photoélectrique ; une couche de filtre de couleur qui comprend une pluralité de filtres de couleur agencée sur le côté de surface d'incidence de lumière du substrat semi-conducteur, et une partie de paroi de séparation agencée entre les filtres de couleur, tout en étant formée d'un matériau qui présente un indice de réfraction inférieur à celui des filtres de couleur ; une pluralité de microlentilles agencée sur le côté de surface d'incidence de lumière de la couche de filtre de couleur ; et une structure à indice de réfraction élevé agencée sur le trajet optique de la lumière collectée par les microlentilles. De plus, la structure à indice de réfraction élevé est formée d'un matériau qui possède un indice de réfraction supérieur à celui d'un élément qui est en contact avec la surface d'incidence de lumière de la structure à indice de réfraction élevé.
PCT/JP2023/027431 2022-09-13 2023-07-26 Dispositif de détection de lumière et appareil électronique WO2024057735A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140239431A1 (en) * 2013-02-25 2014-08-28 Samsung Electronics Co., Ltd. Image sensor and computing system having the same
WO2014141991A1 (fr) * 2013-03-15 2014-09-18 ソニー株式会社 Dispositif de capture d'image à semi-conducteurs, procédé permettant de produire ce dernier, et équipement électronique
JP2015076475A (ja) * 2013-10-08 2015-04-20 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2021150325A (ja) * 2020-03-16 2021-09-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
WO2022024550A1 (fr) * 2020-07-29 2022-02-03 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs et appareil électronique
WO2022064853A1 (fr) * 2020-09-25 2022-03-31 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs et appareil électronique

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140239431A1 (en) * 2013-02-25 2014-08-28 Samsung Electronics Co., Ltd. Image sensor and computing system having the same
WO2014141991A1 (fr) * 2013-03-15 2014-09-18 ソニー株式会社 Dispositif de capture d'image à semi-conducteurs, procédé permettant de produire ce dernier, et équipement électronique
JP2015076475A (ja) * 2013-10-08 2015-04-20 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2021150325A (ja) * 2020-03-16 2021-09-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
WO2022024550A1 (fr) * 2020-07-29 2022-02-03 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs et appareil électronique
WO2022064853A1 (fr) * 2020-09-25 2022-03-31 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs et appareil électronique

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