WO2024055612A1

WO2024055612A1 - Data storage method and apparatus for flash memory, and terminal device and storage medium

Info

Publication number: WO2024055612A1
Application number: PCT/CN2023/093322
Authority: WO
Inventors: 邓伟超; 吴大畏; 李晓强
Original assignee: 深圳市硅格半导体有限公司
Priority date: 2022-09-13
Filing date: 2023-05-10
Publication date: 2024-03-21
Also published as: CN115543189A

Abstract

The present application discloses a data storage method and apparatus for a flash memory, and a terminal device and a storage medium. The data storage method for a flash memory comprises the following steps: calculating the number of first error bits and the number of basic error bits of each storage block in an initialized flash memory; and adding the number of basic error bits and the number of first error bits to a wear table of the flash memory, wherein the wear table comprises the number of erasure times of each storage block.

Description

Data storage method, device, terminal equipment and storage medium of flash memory

This application claims priority to the Chinese patent application with application number 202211114195.3 filed on September 13, 2022, the entire content of which is incorporated into this application by reference.

Technical field

The present application relates to the field of memory technology, and in particular to a data storage method, device, terminal equipment and computer storage medium of a flash memory.

Background technique

The erroneous bits present in the data stored in the flash memory can be corrected using hard solution or soft solution. When the number of erroneous bits in the data stored in the flash memory is small, a hard solution can be used for error correction. However, when the number of erroneous bits in the data stored in the flash memory exceeds a certain number, a soft solution will be used for error correction. . Soft decryption requires the master control to cooperate with the hard decryption module to perform multiple matches. Therefore, when there are too many erroneous bits in the data stored in the blocks in the flash memory, the reading speed will slow down.

When the data in the flash memory needs to be erased, all the data in the block where the data is located often needs to be erased. The number of erases for each block is limited. Repeated erasing of the same block will cause excessive wear of the block, which will lead to an increase in the number of erroneous bits in the data of the block. At the same time, excessive wear of the block will also cause read Slows down.

The above content is only used to assist in understanding the technical solutions of the present application, and does not represent an admission that the above content is prior art.

technical problem

The main purpose of this application is to provide a data storage method, device, terminal equipment and computer storage medium for a flash memory, aiming to solve the problem of excessive block wear of the flash memory and excessive number of erroneous bits in the data stored on the blocks resulting in reading Slow technical issues.

Technical solutions

To achieve the above objectives, this application provides a data storage method in a flash memory. The data storage in the flash memory includes the following steps:

Calculate the first error bit number and the basic error bit number of each storage block in the initialized flash memory;

Add the basic error bit number and the first error bit number to a wear table of the flash memory, wherein the wear table includes the number of erasures of each of the storage blocks;

Determine the target storage block in each of the storage blocks according to the wear table, wherein the sum of the second error bit number of the target storage block and the basic error bit number is the smallest in the wear table, and The second number of error bits is the product of the first number of error bits and the number of erasures;

Data storage in the flash memory is performed according to the target storage block.

In one embodiment, the first error bit number is the number of error bits present in every 2KB of data on the storage block, and the step of calculating the first error bit number of each storage block in the initialized flash memory is, include:

Erase the data on each storage block in the initialized flash memory and rewrite the data on the storage block;

Read the rewritten data from each storage block respectively to obtain the basic error bit number of each storage block;

After repeating a preset number of erasing operations on each of the storage blocks, data is rewritten on each of the storage blocks, and the rewritten data is read from each of the storage blocks to obtain each of the storage blocks. The third error bit number of each of the above memory blocks;

For each storage block, calculate the difference between the basic number of error bits and the third number of error bits, and use the absolute value of the difference divided by the preset number to calculate the number of the storage block. The average number of error bits, and use the average number of error bits to calculate the number of error bits per 2KB of data.

In one embodiment, after the step of storing data in the flash memory according to the target storage block, the data storage method in the flash memory further includes:

The wear table is updated according to each storage block in the flash memory, so as to determine a target storage block in each storage block according to the updated wear table.

In an embodiment, the data storage method of the flash memory further includes:

Monitor the usage duration of the flash memory;

The step of updating the wear table according to each storage block in the flash memory includes:

For each of the storage blocks, when the monitored usage time is equal to the preset time length, after the first erasure operation is performed on the storage block after the usage time is equal to the preset time length, Calculate the fourth error bit number of the storage block;

The wear table is updated using the fourth error bit number.

In one embodiment, the step of updating the wear table according to each storage block in the flash memory includes:

When it is determined that there is a worn block in each storage block of the flash memory whose number of erasures is equal to the preset number of times, the first erasure is performed on the worn block after the number of erasures is equal to the preset number of times. After the operation, calculate the fifth error bit number of the worn block;

The wear table is updated using the fifth error bit number.

In one embodiment, before the step of calculating the fifth error bit number of the worn block, the data storage method of the flash memory further includes:

Exchanging data for the worn blocks in each storage block of the flash memory;

The step of calculating the fifth error bit number of the worn block includes:

Calculate the fifth error bit number of the worn block after data exchange.

In an embodiment, the data storage method of the flash memory further includes:

Determine the data storage amount of the flash memory;

For each storage block, when the data storage amount of the flash memory reaches a preset storage amount threshold, the storage block is erased for the first time after the data storage amount reaches the storage amount threshold. After the operation, calculate the sixth error bit number of each storage block;

The wear table is updated using each of the sixth error bit numbers.

In order to achieve the above object, the present application also provides a data storage device of a flash memory. The data storage device of the flash memory includes:

A calculation module used to calculate the first error bit number and the basic error bit number of each storage block in the initialized flash memory;

An adding module, configured to add the basic error bit number and the first error bit number to a wear table of the flash memory, wherein the wear table includes the number of erasures of each of the storage blocks;

Determining module, configured to determine the target storage block in each of the storage blocks according to the wear table, wherein the sum of the second error bit number of the target storage block and the basic error bit number is At the minimum, the second number of error bits is the product of the first number of error bits and the number of erasures;

The determining module is also configured to store data in the flash memory according to the target storage block.

To achieve the above object, the present application also provides a terminal device, which includes: a memory, a processor, and a data storage program of a flash memory stored in the memory and executable on the processor, wherein the When the data storage program of the flash memory is executed by the processor, the steps of the data storage method of the flash memory as described above are implemented.

In addition, in order to achieve the above object, the present application also proposes a computer storage medium. A data storage program of a flash memory is stored on the computer storage medium. When the data storage program of the flash memory is executed by a processor, the above mentioned steps are implemented. Steps of data storage method of flash memory.

beneficial effects

In this application, by calculating the first error bit number and the basic error bit number of each storage block in the initialized flash memory, the basic error bit number and the first error bit number are added to the wear table of the flash memory, where the wear table Including the number of erasures of each storage block, the target storage block in each storage block is determined according to the wear table. Among them, the sum of the second error bit number of the target storage block and the basic error bit number is the smallest in the wear table. The number of error bits is the product of the first number of error bits and the number of erases, and data is stored in the flash memory according to the target storage block. In this way, this application realizes that the storage block used each time for data storage is the block with the smallest sum of the second error bit number and the basic error bit number in each storage block, so that each storage block is used evenly and avoids data storage in Part of the memory block has too many first error bits and erase times, thereby avoiding slow reading speed caused by too many error bits and too many erase times in the data of the storage block.

Description of drawings

Figure 1 is a schematic structural diagram of a terminal device of the hardware operating environment involved in the embodiment of the present application;

Figure 2 is a schematic flow chart of the first embodiment of the data storage method of the flash memory of the present application;

FIG. 3 is a schematic diagram of functional modules of a data storage device of a flash memory according to an embodiment of the present application.

The realization of the purpose, functional features and advantages of the present application will be further described with reference to the embodiments and the accompanying drawings.

Embodiments of the invention

It should be understood that the specific embodiments described here are only used to explain the present application and are not used to limit the present application.

As shown in Figure 1, Figure 1 is a schematic structural diagram of the hardware operating environment of the terminal device involved in the solution of the embodiment of the present application.

It should be noted that Figure 1 is a schematic structural diagram of the hardware operating environment of the terminal device. Specifically, the terminal device may be a mobile terminal, a data storage control terminal, a PC or a portable computer, or other terminals.

As shown in Figure 1, the terminal device may include: a processor 1001, such as a CPU, a network interface 1004, a user interface 1003, a memory 1005, and a communication bus 1002. Among them, the communication bus 1002 is used to realize connection communication between these components. The user interface 1003 may include a display screen (Display) and an input unit such as a keyboard (Keyboard). The user interface 1003 may also include a standard wired interface and a wireless interface. The network interface 1004 may include standard wired interfaces and wireless interfaces (such as WI-FI interfaces). The memory 1005 can be a non-volatile memory (eg, flash memory), a high-speed RAM memory, or a stable memory (non-volatile memory), such as a disk memory. The memory 1005 may also be a storage device independent of the aforementioned processor 1001.

Those skilled in the art can understand that the structure of the terminal device shown in Figure 1 does not constitute a limitation on the terminal device, and may include more or fewer components than shown, or combine certain components, or arrange different components.

As shown in Figure 1, memory 1005, which is a computer storage medium, may include a communication bus interface, a main control chip, storage particles, and a data storage program of a flash memory. Among them, the main control chip contains firmware programs, which are used to manage and control the hardware and software resources of the sample terminal equipment.

In the terminal device shown in Figure 1, the user interface 1003 is mainly used to communicate data with each terminal; the network interface 1004 is mainly used to connect to the background server and communicate data with the background server; and the processor 1001 can be used to call the memory 1005 Store the data in the flash memory and perform the following operations:

Further, the processor 1001 can call the data storage program of the flash memory stored in the memory 1005, and also perform the following operations:

Monitor the usage duration of the flash memory;

The operation of updating the wear table according to each storage block in the flash memory includes:

The wear table is updated using the fourth error bit number.

The wear table is updated using the fifth error bit number.

Exchanging data for the worn blocks in each storage block of the flash memory;

The operation of calculating the fifth error bit number of the worn block includes:

Calculate the fifth error bit number of the worn block after data exchange.

Determine the data storage amount of the flash memory;

The wear table is updated using each of the sixth error bit numbers.

Based on the above structure, various embodiments of the data storage method of the flash memory of the present application are proposed.

It should be noted that when an error occurs in the data stored in the flash memory, hard solution or soft solution can be used to correct the error in the data stored in the flash memory. When the number of erroneous bits in the data stored in the flash memory is small, a hard solution can be used for error correction. However, when the number of erroneous bits in the data stored in the flash memory exceeds a certain number, a soft solution will be used for error correction. , soft solution requires the main control to cooperate with the hard solution module for multiple matching. Flash memory reads data in blocks. Therefore, when there are too many erroneous bits in the data stored in blocks in the flash memory, the number of erroneous bits will affect the decoding speed, and the master will need to perform error correction, resulting in the Blocks are read slower.

Flash memory performs data erasure operations in blocks. When the data in the flash memory needs to be erased, all data in the block where the data is located often needs to be erased. The number of erases for each block is limited. Repeated erasing of the same block will cause excessive wear of the block, resulting in an increase in the number of erroneous bits in the data of the block. Due to excessive block wear, the decoding time will become longer, resulting in Reading speeds will also be slower.

In view of the above phenomenon, this embodiment proposes a data storage method of flash memory. By calculating the number of error bits in each block (hereinafter referred to as storage block for distinction) in the initialized flash memory, the number of error bits is added to the wear table. When selecting the storage block to store data, based on the number of error bits and the number of erasures in the wear table, the storage block with the smallest product of the number of error bits and the number of erasures is selected from each storage block to store the data, avoiding the need for Too many erroneous bits in the data of the storage block and too many erasures cause the speed of reading data to slow down. For the convenience of description below, the storage block selected from each storage block with the smallest product of the number of error bits and the number of erasures is called the target storage block.

Please refer to FIG. 2 , which is a schematic flowchart of a data storage method in a flash memory according to a first embodiment of the present application. It should be noted that although a logical sequence is shown in the flowcharts, in some cases the steps shown or described may be performed in a sequence different from that herein. In this embodiment, the data storage method of the flash memory includes:

Step S100, calculate the first error bit number and the basic error bit number of each memory block in the initialized flash memory;

In this embodiment, the average number of error bits (hereinafter referred to as the first number of error bits for distinction) caused by each erase operation of each memory block in the initialized flash memory is calculated, and the initialized flash memory is calculated separately. The number of error bits in each memory block (hereinafter referred to as the basic number of error bits for distinction). In a specific implementation, the number of error bits of a storage block can be the number of error bits per 2KB of data in the storage block, or it can be the number of error bits when the storage block is full of data. It can be set according to actual needs. This is not restricted.

Step S200: Add the basic error bit number and the first error bit number to a wear table of the flash memory, where the wear table includes the number of erasures of each of the storage blocks;

In order to prolong the service life of flash memory, a wear leveling algorithm is usually used to ensure that the number of erasures of each storage block in the flash memory is balanced, and to avoid excessive wear and tear due to too many erasures of a certain storage block, which will cause the performance of the flash memory to degrade. The wear leveling of flash memory is achieved by constructing a wear table, which records the cumulative number of erasures of each storage block. Each time a write or erase operation is performed on the flash memory, the storage block with the least number of erasures in the wear table is selected for operation. , so that each storage block can be fully utilized.

In this embodiment, the first error bit number and the basic error bit number corresponding to each storage block are added to the wear table to obtain a new wear table, and the wear table after adding the first error bit number and the basic error bit number is used as the selection The basis used to store data.

Step S300: Determine a target storage block in each storage block according to the wear table, wherein the sum of the second error bit number of the target storage block and the basic error bit number is the smallest in the wear table. , the second number of error bits is the product of the first number of error bits and the number of erasures;

In this embodiment, the product of the first number of error bits and the number of erasures in each memory block is calculated to obtain the second number of error bits. It can be understood that the second number of error bits is the number of error bits generated by the erasure operation of the memory block. .

According to the wear table, select the target storage block with the smallest sum of the second error bit number and the basic error bit number in each storage block.

Specifically, in one embodiment, the wear table may pre-contain the sum of the second error bit number and the basic error bit number corresponding to each storage block, and the smallest and corresponding storage block is directly selected when selecting the target storage block; In another embodiment, when data needs to be stored, the sum of the second error bit number and the basic error bit number can also be calculated to select the storage block with the smallest sum of the second error bit number and the basic error bit number as the storage block. Target storage block. The specific settings can be set according to the actual situation, and there are no restrictions here.

Step S400: Store data in the flash memory according to the target storage block.

When data storage needs to be performed in the flash memory, the target storage block is selected for data storage.

Further, in one embodiment, the first number of error bits is the number of error bits present in every 2KB of data on the storage block. Step S100 includes

Step S101, erase the data on each storage block in the initialized flash memory and rewrite the data on the storage block;

In this embodiment, the first number of error bits is calculated for the initialized flash memory. Data may be pre-stored in the initialized flash memory, so an erase operation is performed on each storage block in the flash memory to re-store the data.

To rewrite data in each storage block, in a specific implementation, the same amount of data can be written in each storage block, for example, each storage block is filled with data, or it can be written in each storage block. There are no restrictions on the different amounts of data and can be set according to actual needs.

Step S102: Read the rewritten data from each storage block to obtain the basic error bit number of each storage block;

Read the rewritten data in each storage block, and calculate the total number of error bits in the respective data of each storage block based on the written data and the read data, that is, the basic number of error bits.

Step S103: After repeating a preset number of erasing operations on each of the storage blocks, rewrite data on each of the storage blocks, and read the rewritten data from each of the storage blocks respectively. Obtain the third error bit number of each of the storage blocks;

After calculating the basic number of error bits, a preset number of erase operations are repeated for each storage block. After repeating a preset number of erase operations on each memory block, rewrite data on each memory block, and read the rewritten data from each memory block to obtain errors in the respective data of each memory block. The total number of bits (hereinafter referred to as the third error bit number for distinction).

In a specific implementation, the preset number can be set according to actual needs. For example, in one implementation, the preset number can be set to 10.

Step S104: For each storage block, calculate the difference between the basic number of error bits and the third number of error bits, and use the absolute value of the difference divided by the preset number to calculate the The average number of error bits for a block is stored and used to calculate the number of error bits per 2KB of data.

For each storage block, calculate the difference between the basic number of error bits and the third number of error bits, and use the absolute value of the difference divided by the preset number to calculate the average number of error bits of the storage block. Use the average number of error bits to calculate the number of error bits in every 2KB data and obtain the first number of error bits.

In this embodiment, by calculating the first error bit number and the basic error bit number of each storage block in the initialized flash memory, the basic error bit number and the first error bit number are added to the wear table of the flash memory, where the wear The table includes the number of erasures of each storage block. The target storage block in each storage block is determined according to the wear table. The sum of the second error bit number and the basic error bit number of the target storage block is the smallest in the wear table. The second error bit number is the product of the first error bit number and the number of erases, and the data in the flash memory is stored according to the target storage block. It is realized that the storage block used for each data storage is the block with the smallest sum of the second error bit number and the basic error bit number in each storage block, so that each storage block is used evenly and avoids the data storage in some of the first errors. On a memory block with too many bits and erase times, it avoids slowing down the reading speed due to too many erroneous bits and too many erasures in the data of the memory block.

Furthermore, based on the above first embodiment, a second embodiment of the data storage method of the flash memory of the present application is proposed.

In this embodiment, after the above step S400, the data storage method of the flash memory of the present application also includes:

Step S500: Update the wear table according to each storage block in the flash memory to determine a target storage block in each storage block according to the updated wear table.

Affected by various factors such as the usage time of the flash memory, the amount of stored data, and the performance of the flash memory itself, when data is stored in the flash memory, the number of first error bits in each storage block in the flash memory is compared with the initialization The flash memory will undergo certain changes.

In this embodiment, by updating the wear table, the target storage block is determined according to the updated wear table and the target storage block is used for data storage, so that data can be stored according to the actual usage of the flash memory, so that the flash memory can Each storage block can be used evenly.

Further, in one embodiment, the data storage method of the flash memory of the present application also includes:

Step S600, monitor the usage time of the flash memory;

In this embodiment, the usage time of the flash memory is detected, and whether to update the wear table is confirmed based on the usage time of the flash memory.

In this implementation, step S500 includes:

Step S501: For each storage block, when the monitored usage duration is equal to the preset duration, perform the first erasure on the storage block after the usage duration is equal to the preset duration. After the operation, calculate the fourth error bit number of the storage block;

Step S502: Use the fourth number of error bits to update the wear table.

In this embodiment, for each storage block, when it is detected that the usage time of the flash memory is equal to the preset time length, after the first erase operation is performed on the storage block after the usage time is equal to the preset time length, the storage block is calculated. The average number of error bits generated by each erase operation (hereinafter referred to as the fourth number of error bits for distinction). Specifically, for calculating the fourth error bit number, reference may be made to steps S101 to S104 in the first embodiment, which will not be described in detail here.

After obtaining the fourth error bit number, use the fourth error bit number to replace the error bit number of the corresponding storage block in the wear table to update the wear table, so that the target storage block can be determined based on the updated wear table to use the target storage Blocks are used for data storage.

Specifically, in one embodiment, the number of preset durations may be one, that is, the wear table is updated only once; in another embodiment, the number of preset durations may also be multiple, that is, every time the wear table is updated, the number of preset durations may be multiple. The wear table is updated at a certain time interval, which can be set according to actual needs and is not limited here.

It should be noted that by calculating the fourth error bit number of each storage block for a flash memory with a certain usage time to update the wear table, the number of calculations can be reduced, thereby ensuring the operating performance.

Further, in one implementation, step S500 includes:

Step S503: When it is determined that there is a worn block in the storage block of the flash memory whose number of erasures is equal to the preset number of times, the first step after the number of erasures of the worn block is equal to the preset number of times is performed. After the erasure operation, calculate the fifth error bit number of the worn block;

Step S504: Update the wear table using the fifth error bit number.

In this embodiment, a storage block whose number of erasures is equal to the preset number of times is called a wear block. When it is determined that a wear block exists in the flash memory, the first time the wear block is erased after the number of times is equal to the preset number of times. After the erase operation, calculate the average number of error bits generated by each erase operation of the worn block (hereinafter referred to as the fifth error bit number for distinction). Specifically, for calculating the fifth error bit number, reference may be made to steps S101 to S104 in the first embodiment, which will not be described in detail here.

After obtaining the fifth error bit number, use the fifth error bit number to replace the error bit number of the corresponding wear block in the wear table to update the wear table, so that the target storage block can be determined based on the updated wear table to use the target. Memory blocks are used for data storage.

It should be noted that by calculating the fifth error bit number of the worn blocks in the flash memory to update the wear table, the number of calculations can be reduced, thereby ensuring operating performance.

Further, in one embodiment, before the step of calculating the fifth error bit number of the second storage block in step S503, the step further includes:

Step S505, perform data exchange for the worn blocks in each storage block of the flash memory;

When a storage block has been erased a large number of times, it can be determined that the data on the storage block is frequently updated. The data on a storage block with a large number of erasures is called hot data, and the data in a storage block with a small number of erasures is called hot data. Cold data is used to distinguish.

In this embodiment, data is exchanged for the worn blocks in each storage block whose erasure times have reached a preset number of times, that is, hot data on the worn blocks is exchanged with cold data on the storage blocks with fewer erasure times. This reduces the number of erases of worn blocks to extend the life of flash memory.

The step of calculating the fifth error bit number of the second storage block in step S503 includes:

Step S5031: Calculate the fifth error bit number of the worn block after data exchange;

After data exchange, the fifth error bit number of the worn block after data exchange is calculated. The fifth error bit number is used to replace the error bit number of the corresponding wear block block in the wear table to update the wear table, so that the target storage block can be determined according to the updated wear table and the target storage block can be used for data storage.

It should be noted that by exchanging data for the worn blocks whose erasure times reach a preset number of times in each storage block, the number of erasure times of the worn blocks can be reduced to extend the use time of the flash memory.

By updating the wear table using the fifth error bit number of the wear block after data exchange, the values in the wear table can be made to conform to the actual usage of the flash memory, so that each storage block in the flash memory can be used evenly.

Step S700, determine the data storage amount of the flash memory;

In this embodiment, the data storage amount of the flash memory is determined, and whether to erase invalid data in the flash memory is determined based on the data storage amount, so that the flash memory can store more useful data and extend the use time of the flash memory.

In this implementation, step S500 includes:

Step S506: For each storage block, when the data storage amount of the flash memory reaches a preset storage amount threshold, perform the first step on the storage block after the data storage amount reaches the storage amount threshold. After the erasure operation, calculate the sixth error bit number of each second memory block;

In this embodiment, for each storage block, when the data storage amount of the flash memory reaches the preset storage amount threshold, after the first erase operation is performed on the storage block after the data storage amount reaches the storage amount threshold, each calculation is performed. The average number of error bits generated by each erase operation of a memory block (hereinafter referred to as the sixth number of error bits for distinction). Specifically, for calculating the sixth error bit number, reference may be made to steps S101 to S104 in the first embodiment, which will not be described again.

Step S507: Update the wear table using each of the sixth error bit numbers.

The sixth error bit number is used to replace the error bit number of the corresponding storage block in the wear table to update the wear table, so that the target storage block can be determined according to the updated wear table and the target storage block can be used for data storage.

It should be noted that by updating the wear table using the sixth error bit number, the values in the wear table can be made to conform to the actual usage of the flash memory, so that each storage block in the flash memory can be used evenly.

In this embodiment, the wear table is updated for flash memories with different usage conditions, and the target storage block is determined based on the updated wear table to use the target storage block for data storage, so that it can be performed based on the actual usage of the flash memory. Data storage allows each storage block in the flash memory to be used evenly.

The present application also provides a data storage device of a flash memory. Referring to Figure 3, the data storage device of the flash memory includes:

The calculation module 10 is used to calculate the first error bit number and the basic error bit number of each storage block in the initialized flash memory;

Adding module 20, configured to add the basic error bit number and the first error bit number to a wear table of the flash memory, wherein the wear table includes the number of erasures of each of the storage blocks;

The determination module 30 is configured to determine a target storage block in each of the storage blocks according to the wear table, wherein the sum of the second error bit number of the target storage block and the basic error bit number is the wear table The smallest number of error bits is the product of the first error bit number and the number of erasures;

The determination module 30 is also configured to store data in the flash memory according to the target storage block.

Further, the first number of error bits is the number of error bits present in every 2KB of data on the storage block, and the calculation module 10 is also used to:

Further, the data storage device of the flash memory also includes an update module, the update module is used for:

Further, the data storage device of the flash memory also includes a monitoring module, the monitoring module is used for:

Monitor the usage duration of the flash memory;

The update module is also used to:

The wear table is updated using the fourth error bit number.

Further, the update module is also used to:

The wear table is updated using the fifth error bit number.

Further, the update module is also used to:

Exchanging data for the worn blocks in each storage block of the flash memory;

The step of calculating the fifth error bit number of the worn block includes:

Calculate the fifth error bit number of the worn block after data exchange.

Furthermore, the monitoring module is also used to:

Determine the data storage amount of the flash memory;

The update module is also used to:

The wear table is updated using each of the sixth error bit numbers.

For each embodiment of the data storage device of the flash memory of the present application, reference can be made to the various embodiments of the data storage method of the flash memory of the present application, and will not be described again here.

In addition, the embodiment of the present application also proposes a computer storage medium. A data storage program of a flash memory is stored on the computer storage medium. When the data storage program of the flash memory is executed by a processor, the above-described operation of the flash memory is realized. Steps of data storage method.

For each embodiment of the computer storage medium of the present application, reference may be made to the various embodiments of the data storage method of the flash memory of the present application, which will not be described again here.

It should be noted that, as used herein, the terms "include", "comprising" or any other variation thereof are intended to cover a non-exclusive inclusion, such that a process, method, article or system that includes a list of elements not only includes those elements, but It also includes other elements not expressly listed or that are inherent to the process, method, article or system. Without further limitation, an element defined by the statement "comprises a..." does not exclude the presence of additional identical elements in the process, method, article, or system that includes that element.

The above serial numbers of the embodiments of the present application are only for description and do not represent the advantages or disadvantages of the embodiments.

Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus the necessary general hardware platform. Of course, it can also be implemented by hardware, but in many cases the former is better. implementation. Based on this understanding, the technical solution of the present application can be embodied in the form of a software product in nature or in part that contributes to the existing technology. The computer software product is stored in a computer storage medium (such as ROM/ RAM, magnetic disk, optical disk), includes several instructions to cause a terminal device (which can be a mobile phone, computer, server, or network device, etc.) to execute the method described in each embodiment of the application.

The above are only preferred embodiments of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of the present application may be directly or indirectly used in other related technical fields. , are all equally included in the scope of patent protection of this application.

Claims

A data storage method of flash memory, wherein the data storage method of flash memory includes the following steps:

Calculate the first error bit number and the basic error bit number of each storage block in the initialized flash memory;

Add the basic error bit number and the first error bit number to a wear table of the flash memory, wherein the wear table includes the number of erasures of each of the storage blocks;

Determine the target storage block in each of the storage blocks according to the wear table, wherein the sum of the second error bit number of the target storage block and the basic error bit number is the smallest in the wear table, and The second number of error bits is the product of the first number of error bits and the number of erasures;

Data storage in the flash memory is performed according to the target storage block.
The data storage method of a flash memory as claimed in claim 1, wherein the first number of error bits is the number of error bits present in every 2KB of data on the storage block, and the calculation initialization of each storage block in the flash memory is The steps for the respective first error bit number and basic error bit number include:

Erase the data on each storage block in the initialized flash memory and rewrite the data on the storage block;

Read the rewritten data from each storage block respectively to obtain the basic error bit number of each storage block;

After repeating a preset number of erasing operations on each of the storage blocks, data is rewritten on each of the storage blocks, and the rewritten data is read from each of the storage blocks to obtain each of the storage blocks. The third error bit number of each of the above memory blocks;

For each storage block, calculate the difference between the basic number of error bits and the third number of error bits, and use the absolute value of the difference divided by the preset number to calculate the number of the storage block. The average number of error bits, and use the average number of error bits to calculate the number of error bits per 2KB of data.
The data storage method of a flash memory as claimed in claim 1, wherein after the step of storing data in the flash memory according to the target storage block, the data storage method of the flash memory further includes:

The wear table is updated according to each storage block in the flash memory, so as to determine a target storage block in each storage block according to the updated wear table.
The data storage method of flash memory as claimed in claim 3, wherein the data storage method of flash memory further includes:

Monitor the usage duration of the flash memory;

The step of updating the wear table according to each storage block in the flash memory includes:

For each of the storage blocks, when the monitored usage time is equal to the preset time, after performing the first erasing operation on the storage block after the usage time is equal to the preset time, calculating the fourth number of error bits of the storage block;

The wear table is updated using the fourth error bit number.
The data storage method of a flash memory as claimed in claim 3, wherein the step of updating the wear table according to each storage block in the flash memory includes:

When it is determined that there is a worn block in each storage block of the flash memory whose number of erasures is equal to the preset number of times, the first erasure is performed on the worn block after the number of erasures is equal to the preset number of times. After the operation, calculate the fifth error bit number of the worn block;

The wear table is updated using the fifth error bit number.
The data storage method of flash memory as claimed in claim 5, wherein before the step of calculating the fifth error bit number of the worn block, the data storage method of flash memory further includes:

Exchanging data for the worn blocks in each storage block of the flash memory;

The step of calculating the fifth error bit number of the worn block includes:

Calculate the fifth error bit number of the worn block after data exchange.
The data storage method of flash memory as claimed in claim 3, wherein the data storage method of flash memory further includes:

Determine the data storage amount of the flash memory;

The step of updating the wear table according to each storage block in the flash memory includes:

For each storage block, when the data storage amount of the flash memory reaches a preset storage amount threshold, the storage block is erased for the first time after the data storage amount reaches the storage amount threshold. After the operation, calculate the sixth error bit number of each storage block;

The wear table is updated using each of the sixth error bit numbers.
A data storage device of a flash memory, wherein the data storage device of the flash memory includes:

The calculation module is used to calculate the first error bit number and the basic error bit number of each storage block in the initialized flash memory;

An adding module, configured to add the basic error bit number and the first error bit number to a wear table of the flash memory, wherein the wear table includes the number of erasures of each of the storage blocks;

Determining module, configured to determine the target storage block in each of the storage blocks according to the wear table, wherein the sum of the second error bit number of the target storage block and the basic error bit number is At the minimum, the second number of error bits is the product of the first number of error bits and the number of erasures;

The determining module is also configured to store data in the flash memory according to the target storage block.
A terminal device, wherein the terminal device includes: a memory, a processor, and a data storage program of a flash memory stored on the memory and operable on the processor, and the data storage program of the flash memory is When the processor executes the steps, the data storage method of the flash memory according to any one of claims 1 to 7 is implemented.
A computer storage medium, wherein a computer program is stored on the computer storage medium, and when the computer program is executed by a processor, the steps of the data storage method of the flash memory according to any one of claims 1 to 7 are implemented. .