WO2024049496A3 - Topological quantum computing systems and methods - Google Patents

Topological quantum computing systems and methods Download PDF

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Publication number
WO2024049496A3
WO2024049496A3 PCT/US2023/012011 US2023012011W WO2024049496A3 WO 2024049496 A3 WO2024049496 A3 WO 2024049496A3 US 2023012011 W US2023012011 W US 2023012011W WO 2024049496 A3 WO2024049496 A3 WO 2024049496A3
Authority
WO
WIPO (PCT)
Prior art keywords
topological
entangled
methods
computing systems
topological quantum
Prior art date
Application number
PCT/US2023/012011
Other languages
French (fr)
Other versions
WO2024049496A2 (en
Inventor
Alton J. REICH
Roberto Di Salvo
Original Assignee
Streamline Automation Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Streamline Automation Llc filed Critical Streamline Automation Llc
Publication of WO2024049496A2 publication Critical patent/WO2024049496A2/en
Publication of WO2024049496A3 publication Critical patent/WO2024049496A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66984—Devices using spin polarized carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices

Abstract

A topological quantum processor includes a topological quantum register comprising a plurality of entangled topological qubits on a silicon oxide layer of a silicon substrate. Measuring means determine the direction of spin current for each of the entangled topological qubits simultaneously. A digital processor provides interface with a digital computer and controls the operation of a power supply to place the entangled topological qubits into a state of superposition and to control the operation of the measuring means.
PCT/US2023/012011 2022-01-31 2023-01-31 Topological quantum computing systems and methods WO2024049496A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202263305146P 2022-01-31 2022-01-31
US63/305,146 2022-01-31

Publications (2)

Publication Number Publication Date
WO2024049496A2 WO2024049496A2 (en) 2024-03-07
WO2024049496A3 true WO2024049496A3 (en) 2024-03-28

Family

ID=90100480

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2023/012011 WO2024049496A2 (en) 2022-01-31 2023-01-31 Topological quantum computing systems and methods

Country Status (1)

Country Link
WO (1) WO2024049496A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160125310A1 (en) * 2014-11-03 2016-05-05 Newsouth Innovations Pty Limited Apparatus and method for quantum processing
US20190392341A1 (en) * 2018-06-20 2019-12-26 equal1.labs Inc. Reprogrammable quantum processor architecture
US20200302328A1 (en) * 2015-12-03 2020-09-24 The University Of Sydney A quantum electronic device
US20210117845A1 (en) * 2019-10-18 2021-04-22 Hyeongrak CHOI Freely Scalable Quantum Computing using a 2D Atomic Emitter Array with Massively Parallel Optical Interconnects
US20220012621A1 (en) * 2018-11-19 2022-01-13 QMware AG Systems and methods involving hybrid quantum machines, aspects of quantum information technology and/or other features
US11320588B1 (en) * 2012-04-16 2022-05-03 Mohammad A. Mazed Super system on chip

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11320588B1 (en) * 2012-04-16 2022-05-03 Mohammad A. Mazed Super system on chip
US20160125310A1 (en) * 2014-11-03 2016-05-05 Newsouth Innovations Pty Limited Apparatus and method for quantum processing
US20200302328A1 (en) * 2015-12-03 2020-09-24 The University Of Sydney A quantum electronic device
US20190392341A1 (en) * 2018-06-20 2019-12-26 equal1.labs Inc. Reprogrammable quantum processor architecture
US20220012621A1 (en) * 2018-11-19 2022-01-13 QMware AG Systems and methods involving hybrid quantum machines, aspects of quantum information technology and/or other features
US20210117845A1 (en) * 2019-10-18 2021-04-22 Hyeongrak CHOI Freely Scalable Quantum Computing using a 2D Atomic Emitter Array with Massively Parallel Optical Interconnects

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SATZINGER ET AL.: "Realizing topologically ordered states on a quantum processo r", SCIENCE, vol. 374, no. 6572, 2 December 2021 (2021-12-02), pages 1237 - 1241, XP093125951, Retrieved from the Internet <URL:https://www.science.org/doi/epdf/10.1126/science.abi8378> [retrieved on 20240217], DOI: 10.1126/ science .abi8378 *

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