CN103972241A - Array substrate of electronic paper, manufacturing method thereof and electronic paper - Google Patents
Array substrate of electronic paper, manufacturing method thereof and electronic paper Download PDFInfo
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- CN103972241A CN103972241A CN201410155963.9A CN201410155963A CN103972241A CN 103972241 A CN103972241 A CN 103972241A CN 201410155963 A CN201410155963 A CN 201410155963A CN 103972241 A CN103972241 A CN 103972241A
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- film transistor
- photoconductive film
- active layer
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- base palte
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Abstract
The invention provides an array substrate used for electronic paper. The array substrate comprises a plurality of signal emission lines, a plurality of sensing signal lines and a plurality of photosensitive thin film transistors, wherein the source electrodes and the drain electrodes of the photosensitive thin film transistors are arranged on the sensing signal lines, the signal emission lines are connected with the grid electrodes of the photosensitive thin film transistors, and an active layer of each photosensitive thin film transistor corresponds to the gap between every two adjacent points of electronic ink in the electronic paper in position. The invention further provides a manufacturing method of the array substrate and the electronic paper comprising the array substrate. The photosensitive thin film transistors are additionally arranged on the array substrate of the electronic paper, so that touch and control operation on the electronic paper is achieved.
Description
Technical field
The present invention relates to Display Technique field, particularly, relate to a kind of array base palte and manufacture method and a kind of Electronic Paper that comprises this array base palte of Electronic Paper.
Background technology
Existing Electronic Paper generally include array base palte and the transparent electrode substrate to box and be arranged on array base palte and transparency carrier between electric ink.On array base palte, be provided with thin-film transistor, the electric field between thin-film transistor control pixel electrode and public electrode.When electric field is when negative, the white ion in electric ink shows up, and when electric field is timing, the black ion in electric ink shows up.But current Electronic Paper does not still possess the function of touch-control, thereby affect the serviceability of Electronic Paper.
Therefore the function that, how to make Electronic Paper have touch-control becomes this area technical problem urgently to be resolved hurrily.
Summary of the invention
The array base palte and manufacture method and a kind of Electronic Paper that comprises this array base palte that the object of the present invention is to provide a kind of Electronic Paper, this Electronic Paper can realize touch control operation.
To achieve these goals, as one aspect of the present invention, a kind of array base palte for Electronic Paper is provided, wherein, described array base palte comprises many barss line of departure, many induced signal lines and multiple photoconductive film transistor, the source electrode of described photoconductive film transistor and drain electrode are arranged on described induced signal line, the described signal line of departure is connected with the grid of described photoconductive film transistor, and the gap in the position of the active layer of described photoconductive film transistor and described Electronic Paper between adjacent two electric inks is corresponding.
Preferably, described array base palte comprises many grid lines, many data wires and multiple switching thin-film transistor, the grid of described switching thin-film transistor is connected with described grid line, the source electrode of described switching thin-film transistor is arranged on described data wire, the drain electrode of described switching thin-film transistor is electrically connected with pixel electrode, and the grid of described switching thin-film transistor and the grid of described photoconductive film transistor are positioned at same layer, source electrode and the drain electrode of the source electrode of described switching thin-film transistor and drain electrode and described photoconductive film transistor are positioned at same layer, the active layer of described switching thin-film transistor and the active layer of described photoconductive film transistor are positioned at same layer, and the active layer of described switching thin-film transistor top is provided with the metal level that is in the light for being in the light.
Preferably, the drain electrode of described photoconductive film transistor is connected with the source electrode of switching thin-film transistor, and described induced signal line and described data wire form as one.
Preferably, on the grid of described photoconductive film transistor, be formed with public electrode, the described signal line of departure and described grid line form as one.
Preferably, the active layer of the source electrode of described photoconductive film transistor and drain electrode and described photoconductive film transistor is positioned at same layer,
The source electrode of described photoconductive film transistor and drain electrode are made up of carbon nano-tube material, and the active layer of described photoconductive film transistor is made by the carbon nano-tube material that utilizes ultraviolet ray irradiation oxygen treatments applied to cross; Or
The source electrode of described photoconductive film transistor and drain electrode are made up of grapheme material, and the active layer of described photoconductive film transistor makes by utilizing hydrogen or argon gas to process grapheme material.
Preferably, the top layer of described array base palte is provided with pixel electrode, and described pixel electrode is electrically connected with the drain electrode of described switching thin-film transistor.
As another aspect of the present invention, a kind of Electronic Paper is provided, this Electronic Paper comprises array base palte and the transparent electrode substrate to box, described Electronic Paper also comprises the electric ink being arranged between described array base palte and described transparent electrode substrate, wherein, described array base palte is above-mentioned array base palte provided by the present invention, described Electronic Paper also comprises touch drive circuit and touch control circuit, described touch drive circuit comprises touch driver element and touch sensing unit, described touch driver element is connected with the described signal line of departure, provide touch-control to drive signal to the described signal line of departure, described touch sensing unit is connected with described induced signal line, provide induced signal to described induced signal line, described touch control circuit is connected with described induced signal line, and described touch control circuit can receive the signal of telecommunication of described induced signal line.
Preferably, the work period of described Electronic Paper comprises touch-control cycle and display cycle, described Electronic Paper also comprises display controller, the grid line of described array base palte and data wire are electrically connected with described display controller, within the described touch-control cycle, described touch drive circuit provides described touch-control to drive signal and described induced signal, and within the described display cycle, described display controller provides display.
As another aspect of the present invention, a kind of manufacture method of the array base palte for Electronic Paper is provided, wherein, described manufacture method comprises:
Formation comprises the figure of the grid of the signal line of departure and photoconductive film transistor, and wherein, the grid of described photoconductive film transistor is connected with the described signal line of departure;
On array base palte, form the figure of the active layer that comprises described photoconductive film transistor corresponding to the position in the gap between two electric inks of Electronic Paper;
Formation comprises the figure of source electrode, drain electrode and the induced signal line of described photoconductive film transistor, and wherein, the source electrode of described photoconductive film transistor and the drain electrode of described photoconductive film transistor are arranged on described induced signal line.
Preferably, in the active layer that forms described photoconductive film transistor, form the active layer of the switching thin-film transistor of array base palte;
In forming the source electrode of described photoconductive film transistor and drain electrode, form the source electrode of described switching thin-film transistor and the data wire of drain electrode and described array base palte;
In the grid that forms described photoconductive film transistor, form the grid of described switching thin-film transistor and the grid line of described array base palte;
Above the active layer of described switching thin-film transistor, form the figure that comprises the metal level that is in the light, the active layer interval setting of this be in the light metal level and described switching thin-film transistor, and block the light of the active layer of switching thin-film transistor described in directive.
Preferably, the source electrode of described photoconductive film transistor and drain electrode are connected with source electrode and the drain electrode of switching thin-film transistor, and described induced signal line and described data wire form as one; And/or the described signal line of departure and described grid line form as one.
Preferably, the step that forms the source electrode of described photoconductive film transistor and the step of drain electrode and form the active layer of described photoconductive film transistor is synchronously carried out, and comprising:
Utilize carbon nano-tube material to form conductive material layer;
On described conductive material layer, apply photoresist;
Part corresponding with the active layer of described photoconductive film transistor on described photoresist is carried out to ashing after half exposure, form the through hole corresponding to the active layer of described photoconductive film transistor;
Utilize oxygen to being processed by material corresponding to described through hole, then utilize ultraviolet ray to irradiate the carbon nano-tube material through oxygen treatments applied, to obtain the active layer of described photoconductive film transistor, the part of the active layer both sides of described photoconductive film transistor is formed as respectively the drain electrode of source electrode and the described photoconductive film transistor of described photoconductive film transistor.
Preferably, the step that forms the source electrode of described photoconductive film transistor and the step of drain electrode and form the active layer of described photoconductive film transistor is synchronously carried out, and comprising:
Utilize grapheme material to form conductive material layer;
On described conductive material layer, apply photoresist;
Part corresponding with the active layer of described photoconductive film transistor on described photoresist is carried out to ashing after half exposure, form the through hole corresponding to the active layer of described photoconductive film transistor;
Utilize hydrogen or argon gas to being processed by material corresponding to described through hole, to obtain the active layer of described photoconductive film transistor, on described active layer, the part of both sides is formed as respectively source electrode and the drain electrode of described photoconductive film transistor.
Preferably, described manufacture method also comprises:
Forming after the grid of described photodiode, on the grid of this photodiode, form public electrode.
Can realize the touch control operation to Electronic Paper by set up photoconductive film transistor on the array base palte of Electronic Paper.
Brief description of the drawings
Accompanying drawing is to be used to provide a further understanding of the present invention, and forms a part for specification, is used from explanation the present invention, but is not construed as limiting the invention with embodiment one below.In the accompanying drawings:
Fig. 1 is the schematic diagram of the first execution mode of array base palte provided by the present invention;
Fig. 2 is the schematic diagram that comprises the Electronic Paper of the second execution mode of array base palte provided by the present invention;
Fig. 3 is a part of equivalent circuit diagram of array base palte provided by the present invention;
Fig. 4 is the flow chart of the array base palte shown in shop drawings 2.
Description of reference numerals
10: photoconductive film transistor
11: the grid of photoconductive film transistor
12: the active layer of photoconductive film transistor
13: the source electrode of photoconductive film transistor
14: the drain electrode of photoconductive film transistor
20: switching thin-film transistor
21: the grid of switching thin-film transistor
22: the active layer of switching thin-film transistor
23: the source electrode of switching thin-film transistor
24: the drain electrode of switching thin-film transistor
25: metal barrier bed
30: public electrode
40: gate insulation layer
50:PVX protective layer
60: pixel electrode
70: chock insulator matter
80: electric ink
91: transparency electrode
92: flexible base, board
110: the signal line of departure
120: induced signal line
210: grid line
220: data wire
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is elaborated.Should be understood that, embodiment described herein only, for description and interpretation the present invention, is not limited to the present invention.
As one aspect of the present invention, as shown in Figure 1 to Figure 3, a kind of array base palte for Electronic Paper is provided, wherein, described array base palte comprises many barss line of departure 110, many induced signal lines 120 and multiple photoconductive film transistor 10, the source electrode of photoconductive film transistor 10 and drain electrode are arranged on induced signal line 120, the signal line of departure 110 is connected with the grid of photoconductive film transistor 10, and the gap in the position of the active layer 12 of photoconductive film transistor and described Electronic Paper between adjacent two electric inks 80 is corresponding.
In the time that described array base palte is used for to Electronic Paper, the described signal line of departure is connected with touch drive circuit with induced signal line.Touch drive circuit and comprise touch driver element and touch sensing unit, touching driver element is connected with the described signal line of departure, and the described driving signal line of departure of lining by line scan, touch sensing unit is connected with induced signal line, for induced signal line provides induced signal, induced signal line is also connected with touch control circuit, and touch control circuit is for the induced signal on detection sensor holding wire.
In the time not touching operation, photoconductive film transistor 10 is in conducting state, and the electric current on induced signal line 120 does not change, exist while touching operation, operator's finger blocks the light of photoconductive film transistor 10 tops, touch point place, touch control unit can detect by the electric current of induced signal line 120 and change, and therefore determine the coordinate of touch point x direction, touch driver element and provide touch sweep signal for touching driver element, and the frequency that touches sweep signal is very high (for example, be greater than 50Hz), when finger blocks the light of the photoconductive film transistor at touch point place 10 tops, and while receiving touch sweep signal with the signal line of departure at touch point place, photoconductive film transistor 10 conducting again, make the photoconductive film transistor 10 moments conducting again at touch point place, therefore, on the induced signal line being connected with the photoconductive film transistor 10 at touch point place, primary current changes again, can can determine according to the signal line of departure 110 that receives sweep signal the coordinate of touch point y direction.Because the frequency of touch sweep signal is very high, therefore, on the connected induced signal line of touch point place photoconductive film transistor 10, lasting time of curent change is very short again, touches the time far below operator, therefore, can judge easily the position coordinates of touch point.
Can realize the touch control operation to Electronic Paper by set up photoconductive film transistor 10 on the array base palte of Electronic Paper.
Conventionally, described array base palte comprises many grid lines 210, many data wires 220 and multiple switching thin-film transistor 20, the grid of switching thin-film transistor 20 is connected with grid line 210, the source electrode 23 of described switching thin-film transistor is arranged on data wire, and the drain electrode 24 of switching thin-film transistor is connected with pixel electrode 60.
In the array base palte shown in Fig. 1, the active layer of photoconductive film transistor and the source electrode of this photoconductive film transistor, drain electrode lay respectively in two different layers, similarly, the active layer of switching thin-film transistor and the source electrode of this switching thin-film transistor and drain electrode also lay respectively in two different layers.
For the ease of manufacturing, as shown in Figure 2, the grid of switching thin-film transistor 21 and the grid 11 of photoconductive film transistor can be arranged on to same layer, the drain electrode of the source electrode of switching thin-film transistor 23 and switching thin-film transistor 24 and the source electrode 13 of photoconductive film transistor and the drain electrode 14 of photoconductive film transistor are arranged on to same layer, the active layer of switching thin-film transistor 22 and the active layer 12 of photoconductive film transistor are arranged on to same layer.Can form switching thin-film transistor 20 in 10 of formation photoconductive film transistor so simultaneously, thereby improve the efficiency of manufacturing array substrate.
Because the active layer 12 of photoconductive film transistor is light-sensitive material, therefore, the active layer 22 of switching thin-film transistor is also made up of light-sensitive material, in order to prevent that light from affecting the normal demonstration of Electronic Paper, the metal level 25 that is in the light that preferably, can be provided for being in the light above the active layer of switching thin-film transistor 22.Well-known, the conducting of the thin-film transistor that grid material is light-sensitive material and close not only can be by the control of light condition, also can be by the control of grid voltage.In the time that grid voltage reaches the threshold voltage of conducting of described thin-film transistor, described thin-film transistor also can conducting.Switching thin-film transistor just belongs to does not have light to irradiate, but the situation of conducting when grid voltage reaches threshold voltage.Therefore, above the active layer 22 of switching thin-film transistor, the metal level 25 that is in the light is set and can't affects the normal work of switching thin-film transistor.
In order to save material and to simplify the structure of array base palte, preferably, the drain electrode 14 of described photoconductive film transistor is connected with the source electrode 23 of switching thin-film transistor, and induced signal line 120 forms as one with data wire 220.In the time that induced signal line 120 and data wire 220 form as one, need pair array substrate to carry out timesharing demonstration,, the signal period of array base palte can be divided into display cycle and touch-control cycle, within the display cycle, induced signal line 120, as data wire, receives GTG signal; Within the touch-control cycle, induced signal line 120 receives touch-control sensing signal.
Further preferably, be formed with public electrode 30 on the grid of photoconductive film transistor, meanwhile, the signal line of departure 110 forms as one with grid line 210.The effect of public electrode 30 is to form electric capacity with pixel electrode 60, controls to produce the electric field that electric ink shows.Because the signal line of departure 110 and grid line 210 form as one, therefore, within the display cycle, the signal line of departure 110, as grid line, receives sweep signal; Within the touch-control cycle, the signal line of departure receives touch-control and drives signal.
In order to simplify the manufacturing step of array base palte, preferably, the source electrode 13 of described photoconductive film transistor and the drain electrode of photoconductive film transistor 14 are positioned at same layer with the active layer 12 of described photoconductive film transistor, the source electrode 13 of described photoconductive film transistor and the drain electrode 14 of photoconductive film transistor are made up of carbon nano-tube material, and the active layer 12 of photoconductive film transistor is made by the carbon nano-tube material that utilizes ultraviolet ray irradiation oxygen treatments applied to cross.The carbon nano-tube material that utilizes ultraviolet ray irradiation oxygen treatments applied to cross can be converted to photosensitive semiconductor by conductor by carbon nano-tube material.Or the source electrode 13 of described photoconductive film transistor and the drain electrode 14 of photoconductive film transistor are made up of grapheme material, the active layer 12 of photoconductive film transistor makes by utilizing hydrogen or argon gas to process grapheme material.Utilize hydrogen or argon gas to process grapheme material and grapheme material can be converted to photosensitive semiconductor.As noted before, form photoconductive film transistor 10 and switching thin-film transistor 20 simultaneously, therefore, the source electrode 23 of described switching thin-film transistor and the drain electrode of switching thin-film transistor 24 are positioned at same layer with the active layer 22 of described switching thin-film transistor, the source electrode 23 of described switching thin-film transistor and the drain electrode 24 of switching thin-film transistor are made up of carbon nano-tube material, and the active layer 22 of switching thin-film transistor is made by the carbon nano-tube material that utilizes ultraviolet ray irradiation oxygen treatments applied to cross; Or the source electrode 23 of described switching thin-film transistor and the drain electrode 24 of switching thin-film transistor are made up of grapheme material, the active layer 22 of switching thin-film transistor makes by utilizing hydrogen or argon gas to process grapheme material.
Hereinafter, by specifically how to manufacture source electrode, drain electrode and the active layer of photoconductive film transistor and source electrode, drain electrode and the active layer of switching thin-film transistor in same layer, first do not repeat here.
Conventionally, the top layer of described array base palte is pixel electrode, and described pixel electrode is electrically connected with the drain electrode 24 of described switching thin-film transistor.
As another aspect of the present invention, as shown in Figure 3, a kind of Electronic Paper is provided, this Electronic Paper comprises array base palte and the transparent electrode substrate to box, described Electronic Paper also comprises the electric ink being arranged between described array base palte and described transparent electrode substrate, wherein, described array base palte is above-mentioned array base palte provided by the present invention, described Electronic Paper also comprises touch drive circuit and touch control circuit, described touch drive circuit comprises touch driver element and touch sensing unit, described touch driver element is connected with the described signal line of departure, provide touch-control to drive signal to the described signal line of departure, described touch sensing unit is connected with described induced signal line, provide induced signal to described induced signal line, described touch control circuit is connected with described induced signal line, and described touch control circuit can receive the signal of telecommunication of described induced signal line.
In the array base palte of Electronic Paper provided by the present invention, be provided with photoconductive film transistor, therefore, can realize the touch control operation to Electronic Paper.The process that has above described definite touch point position coordinates in detail, repeats no more here.
As shown in Figure 2, the transparent electrode substrate of described Electronic Paper comprises flexible base, board 92 and is arranged on the transparency electrode 91 on flexible base, board.Same as the prior art, between array base palte and transparent electrode substrate, be provided with chock insulator matter 70.
As noted before, when described grid line and the described signal line of departure form as one, when described induced signal line and described data wire form as one, the work period of described Electronic Paper comprises touch-control cycle and display cycle, described Electronic Paper also comprises display controller, the grid line of described array base palte and data wire are electrically connected with described display controller, within the described touch-control cycle, described touch drive circuit provides described touch-control to drive signal and described induced signal, within the described display cycle, described display controller provides display.
As an also aspect of the present invention, as shown in Figure 4, provide a kind of manufacture method of above-mentioned array base palte provided by the present invention, wherein, described manufacture method comprises:
Formation comprises the figure of the grid 11 of signal line of departure (not shown) and described photoconductive film transistor, and wherein the grid 11 of photoconductive film transistor is connected with the described signal line of departure;
On array base palte, form the figure of the active layer 12 that comprises photoconductive film transistor corresponding to the position in the gap between two electric inks of Electronic Paper;
Formation comprises the drain electrode 14 of the source electrode 13 of described photoconductive film transistor, described photoconductive film transistor and the figure of induced signal line, wherein, the source electrode 13 of described photoconductive film transistor and the drain electrode 14 of described photoconductive film transistor are arranged on described induced signal line (not shown).
Should be understood that, the order of above-mentioned steps is not what fix, can determine according to the particular type of described photoconductive film transistor the order of above-mentioned each step, for example, in the time that described photoconductive film transistor has top gate structure, first form the step of the active layer of described photoconductive film transistor, then form the step of the grid of described photoconductive film transistor; In the time that described photoconductive film transistor has bottom grating structure, first form the grid of described photoconductive film transistor, then form the active layer of described photoconductive film transistor.
In addition, in the present invention, to form comprise the signal line of departure and photoconductive film transistor grid figure, comprise described photoconductive film transistor active layer figure and comprise that the method for the figure of source electrode, drain electrode and the induced signal line of described photoconductive film transistor does not have concrete restriction, for example, can form above-mentioned figure by modes such as printing, transfer printings, also can form above-mentioned figure by traditional photoetching process.
As noted before, can synchronously form described photoconductive film transistor and described switching thin-film transistor.Therefore, described manufacture method can comprise:
In the active layer 12 that forms described photoconductive film transistor, form the active layer 22 of the switching thin-film transistor of array base palte;
In forming the source electrode 13 of described photoconductive film transistor and the drain electrode 14 of photoconductive film transistor, form the drain electrode 24 of source electrode 23 and the switching thin-film transistor of described switching thin-film transistor;
In the grid 11 that forms described photoconductive film transistor, form the grid 21 of described switching thin-film transistor and the grid line of described array base palte;
In forming described induced signal line, form the data wire of described array base palte;
Above the active layer of described switching thin-film transistor, form the metal level that is in the light, the active layer interval setting of this be in the light metal level and described switching thin-film transistor, and block the light of the active layer of switching thin-film transistor described in directive." metal level that is in the light arranges with the active layer interval of described switching thin-film transistor " described herein refers to that the metal level that is in the light does not directly contact with active layer.For example, the metal level that is in the light can be arranged on to the top of PVX protective layer 50.
As noted before, described data wire and described induced signal line can form as one, in this case, and the drain electrode of described photoconductive film transistor and the source series of described switching thin-film transistor.And/or the described signal line of departure and described grid line form as one.
In the array base palte shown in Fig. 2, the source electrode of photoconductive film transistor, drain electrode and active layer are positioned at same layer, can obtain by the following method the structure shown in Fig. 2.As shown in Figure 4, the step that forms the source electrode of described photoconductive film transistor and the step of drain electrode and form the active layer of described photoconductive film transistor is synchronously carried out, and comprising:
Utilize carbon nano-tube material to form conductive material layer A;
On described conductive material layer, apply photoresist B;
Part corresponding with the active layer of described photoconductive film transistor on described photoresist is carried out to ashing processing after half exposure, form the through hole 12 ' corresponding to the active layer of described photoconductive film transistor;
Utilize oxygen to being processed by described through hole 12 ' corresponding material, then utilize ultraviolet ray to irradiate the carbon nano-tube material through oxygen treatments applied, to obtain the active layer of described photoconductive film transistor.In this simultaneously, the part of the active layer both sides of described photoconductive film transistor is formed as respectively the drain electrode of source electrode and the described photoconductive film transistor of described photoconductive film transistor.Utilizing ultraviolet ray to irradiate through the carbon nano-tube material of oxygen treatments applied can make carbon nano-tube material be converted to photosensitive semiconductor by conductor.
As another embodiment of the invention, the step that forms the source electrode of described photoconductive film transistor and the step of drain electrode and form the active layer of described photoconductive film transistor is synchronously carried out, and comprising:
Utilize grapheme material to form conductive material layer A;
On described conductive material layer, apply photoresist B;
Part corresponding with the active layer of described photoconductive film transistor on described photoresist is carried out to ashing processing after half exposure, form the through hole 12 ' corresponding to the active layer of described photoconductive film transistor;
Utilize hydrogen or argon gas to being processed by described through hole 12 ' corresponding material, to obtain the active layer of described photoconductive film transistor.In this simultaneously, the part of the active layer both sides of described photoconductive film transistor is formed as respectively the drain electrode of source electrode and the described photoconductive film transistor of described photoconductive film transistor.Utilize hydrogen or argon gas to process and can make grapheme material be converted into photosensitive semiconductor by conductor grapheme material.
Because photoconductive film transistor and switching thin-film transistor are synchronous formation, therefore, in the through hole 12 ' forming corresponding to the active layer of photoconductive film transistor, form the through hole corresponding to the active layer 22 of switching thin-film transistor.
On grid due to photoconductive film transistor, be formed with public electrode, therefore, described manufacture method also comprises: forming after the grid of described photoconductive film transistor, on the grid of this photoconductive film transistor, form public electrode.
Hold intelligiblely, the step that forms described array base palte can also comprise the step that forms gate insulation layer 40 and the step that forms PVX protective layer 50.
Be understandable that, above execution mode is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (14)
1. the array base palte for Electronic Paper, it is characterized in that, described array base palte comprises many barss line of departure, many induced signal lines and multiple photoconductive film transistor, the source electrode of described photoconductive film transistor and drain electrode are arranged on described induced signal line, the described signal line of departure is connected with the grid of described photoconductive film transistor, and the gap in the position of the active layer of described photoconductive film transistor and described Electronic Paper between adjacent two electric inks is corresponding.
2. array base palte according to claim 1, it is characterized in that, described array base palte comprises many grid lines, many data wires and multiple switching thin-film transistor, the grid of described switching thin-film transistor is connected with described grid line, the source electrode of described switching thin-film transistor is arranged on described data wire, the drain electrode of described switching thin-film transistor is electrically connected with pixel electrode, and the grid of described switching thin-film transistor and the grid of described photoconductive film transistor are positioned at same layer, source electrode and the drain electrode of the source electrode of described switching thin-film transistor and drain electrode and described photoconductive film transistor are positioned at same layer, the active layer of described switching thin-film transistor and the active layer of described photoconductive film transistor are positioned at same layer, and the active layer of described switching thin-film transistor top is provided with the metal level that is in the light for being in the light.
3. array base palte according to claim 2, is characterized in that, the drain electrode of described photoconductive film transistor is connected with the source electrode of switching thin-film transistor, and described induced signal line and described data wire form as one.
4. array base palte according to claim 3, is characterized in that, on the grid of described photoconductive film transistor, is formed with public electrode, and the described signal line of departure and described grid line form as one.
5. according to the array base palte described in any one in claim 2 to 4, it is characterized in that, the active layer of the source electrode of described photoconductive film transistor and drain electrode and described photoconductive film transistor is positioned at same layer,
The source electrode of described photoconductive film transistor and drain electrode are made up of carbon nano-tube material, and the active layer of described photoconductive film transistor is made by the carbon nano-tube material that utilizes ultraviolet ray irradiation oxygen treatments applied to cross; Or
The source electrode of described photoconductive film transistor and drain electrode are made up of grapheme material, and the active layer of described photoconductive film transistor makes by utilizing hydrogen or argon gas to process grapheme material.
6. according to the array base palte described in any one in claim 2 to 4, it is characterized in that, the top layer of described array base palte is provided with pixel electrode, and described pixel electrode is electrically connected with the drain electrode of described switching thin-film transistor.
7. an Electronic Paper, this Electronic Paper comprises array base palte and the transparent electrode substrate to box, described Electronic Paper also comprises the electric ink being arranged between described array base palte and described transparent electrode substrate, it is characterized in that, described array base palte is the array base palte described in any one in claim 1 to 6, described Electronic Paper also comprises touch drive circuit and touch control circuit, described touch drive circuit comprises touch driver element and touch sensing unit, described touch driver element is connected with the described signal line of departure, provide touch-control to drive signal to the described signal line of departure, described touch sensing unit is connected with described induced signal line, provide induced signal to described induced signal line, described touch control circuit is connected with described induced signal line, and described touch control circuit can receive the signal of telecommunication of described induced signal line.
8. Electronic Paper according to claim 7, it is characterized in that, the work period of described Electronic Paper comprises touch-control cycle and display cycle, described Electronic Paper also comprises display controller, the grid line of described array base palte and data wire are electrically connected with described display controller, and within the described touch-control cycle, described touch drive circuit provides described touch-control to drive signal and described induced signal, within the described display cycle, described display controller provides display.
9. for a manufacture method for the array base palte of Electronic Paper, it is characterized in that, described manufacture method comprises:
Formation comprises the figure of the grid of the signal line of departure and photoconductive film transistor, and wherein, the grid of described photoconductive film transistor is connected with the described signal line of departure;
On array base palte, form the figure of the active layer that comprises described photoconductive film transistor corresponding to the position in the gap between two electric inks of Electronic Paper;
Formation comprises the figure of source electrode, drain electrode and the induced signal line of described photoconductive film transistor, and wherein, the source electrode of described photoconductive film transistor and the drain electrode of described photoconductive film transistor are arranged on described induced signal line.
10. manufacture method according to claim 9, is characterized in that, forms the active layer of the switching thin-film transistor of array base palte in the active layer that forms described photoconductive film transistor;
In forming the source electrode of described photoconductive film transistor and drain electrode, form the source electrode of described switching thin-film transistor and the data wire of drain electrode and described array base palte;
In the grid that forms described photoconductive film transistor, form the grid of described switching thin-film transistor and the grid line of described array base palte;
Above the active layer of described switching thin-film transistor, form the figure that comprises the metal level that is in the light, the active layer interval setting of this be in the light metal level and described switching thin-film transistor, and block the light of the active layer of switching thin-film transistor described in directive.
11. manufacture methods according to claim 10, is characterized in that, the source electrode of described photoconductive film transistor and drain electrode are connected with source electrode and the drain electrode of switching thin-film transistor, and described induced signal line and described data wire form as one; And/or the described signal line of departure and described grid line form as one.
12. manufacture methods according to claim 10, is characterized in that, the step that forms the source electrode of described photoconductive film transistor and the step of drain electrode and form the active layer of described photoconductive film transistor is synchronously carried out, and comprising:
Utilize carbon nano-tube material to form conductive material layer;
On described conductive material layer, apply photoresist;
Part corresponding with the active layer of described photoconductive film transistor on described photoresist is carried out to ashing after half exposure, form the through hole corresponding to the active layer of described photoconductive film transistor;
Utilize oxygen to being processed by material corresponding to described through hole, then utilize ultraviolet ray to irradiate the carbon nano-tube material through oxygen treatments applied, to obtain the active layer of described photoconductive film transistor, the part of the active layer both sides of described photoconductive film transistor is formed as respectively the drain electrode of source electrode and the described photoconductive film transistor of described photoconductive film transistor.
13. manufacture methods according to claim 10, is characterized in that, the step that forms the source electrode of described photoconductive film transistor and the step of drain electrode and form the active layer of described photoconductive film transistor is synchronously carried out, and comprising:
Utilize grapheme material to form conductive material layer;
On described conductive material layer, apply photoresist;
Part corresponding with the active layer of described photoconductive film transistor on described photoresist is carried out to ashing after half exposure, form the through hole corresponding to the active layer of described photoconductive film transistor;
Utilize hydrogen or argon gas to being processed by material corresponding to described through hole, to obtain the active layer of described photoconductive film transistor, on described active layer, the part of both sides is formed as respectively source electrode and the drain electrode of described photoconductive film transistor.
14. according to claim 10 to the manufacture method described in any one in 13, it is characterized in that, described manufacture method also comprises:
Forming after the grid of described photodiode, on the grid of this photodiode, form public electrode.
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| CN104201106A (en) * | 2014-08-26 | 2014-12-10 | 湖南普照爱伯乐平板显示器件有限公司 | Thin film transistor, and method as well as system for producing same |
| CN104635988A (en) * | 2015-02-10 | 2015-05-20 | 京东方科技集团股份有限公司 | Touch substrate and manufacturing of touch substrate, touch display panel and display device |
| CN107976852A (en) * | 2017-11-22 | 2018-05-01 | 上海天马微电子有限公司 | Array substrate, display panel and display device |
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