CN114281208A

CN114281208A - Touch substrate, display substrate and display device

Info

Publication number: CN114281208A
Application number: CN202111573799.XA
Authority: CN
Inventors: 苗占成
Original assignee: Kunshan New Flat Panel Display Technology Center Co Ltd
Current assignee: Kunshan New Flat Panel Display Technology Center Co Ltd
Priority date: 2021-12-21
Filing date: 2021-12-21
Publication date: 2022-04-05

Abstract

The disclosure relates to a touch substrate, a display substrate and a display device. The touch substrate includes: the touch panel comprises a plurality of first touch signal lines, a plurality of second touch signal lines and a plurality of transparent photosensitive devices. The plurality of transparent photosensitive devices are arranged in an array along a first direction and a second direction and are used for detecting the light-emitting brightness of the pixels; wherein the first direction and the second direction intersect. The first touch signal line extends along a first direction. A row of transparent photosensitive devices is correspondingly coupled with a first touch signal line; the first touch signal line is configured to be multiplexed as a control signal line of the transparent photosensor. The second touch signal line extends along a second direction. A row of transparent photosensitive devices is correspondingly coupled with a second touch signal line; the second touch signal line is configured to be multiplexed as a read signal line of the transparent photosensor. The touch substrate, the display substrate and the display device can improve the aperture opening ratio of the display device on the basis of ensuring the brightness uniformity of the display device.

Description

Touch substrate, display substrate and display device

Technical Field

The present disclosure relates to the field of display technologies, and in particular, to a touch substrate, a display substrate, and a display device.

Background

Organic Light Emitting diodes (OLEDs for short) are widely used in the display field because of their advantages of self-luminescence, high contrast, and low power consumption.

In a display device using an OLED as a light emitting device, due to the material characteristics of the light emitting material inside the OLED, the OLED may age to different degrees with the use time, resulting in a decrease in the uniformity of the display brightness of the display device. Moreover, as the display area of the display device increases, the switching voltage of the driving transistor in the driving circuit corresponding to the OLED is also susceptible to the IR drop, which results in the uniformity of the display brightness of the display device being reduced. Therefore, the internal compensation circuit and/or the external compensation circuit are provided for the OLED in the display device, and the uniformity of the display luminance of the display device can be compensated.

However, when an external compensation circuit is provided in the display device to perform compensation, it is generally necessary to provide a light detection element to collect display luminance. In addition, in order to ensure high compensation accuracy and signal-to-noise ratio, the photodetection element needs to have a large lighting area. Therefore, the aperture ratio of the display device is easily low, which is not favorable for improving the pixel density of the display device.

Disclosure of Invention

Accordingly, there is a need for a touch substrate, a display substrate and a display device, which can improve the aperture ratio of the display device while ensuring the brightness uniformity of the display device.

According to an aspect of the embodiments of the present disclosure, a touch substrate is provided. The touch substrate includes: the touch panel comprises a plurality of first touch signal lines, a plurality of second touch signal lines and a plurality of transparent photosensitive devices. The plurality of transparent photosensitive devices are arranged in an array along a first direction and a second direction and are used for detecting the light-emitting brightness of the pixels; wherein the first direction and the second direction intersect. The first touch signal line extends along a first direction. A row of transparent photosensitive devices is correspondingly coupled with a first touch signal line; the first touch signal line is configured to be multiplexed as a control signal line of the transparent photosensor. The second touch signal line extends along a second direction. A row of transparent photosensitive devices is correspondingly coupled with a second touch signal line; the second touch signal line is configured to be multiplexed as a read signal line of the transparent photosensor.

In the embodiment of the disclosure, the transparent photosensitive device is used as the light detection element to detect the light emitting brightness of the pixel, so that the arrangement position of the transparent photosensitive device is no longer limited by the non-pixel region. Namely: the transparent photosensitive device may be disposed in the pixel region, e.g., directly above the pixel's light emission. Therefore, the transparent photosensitive device can have a larger daylighting area so as to ensure higher compensation precision and signal-to-noise ratio. Meanwhile, the transparent photosensitive device has high light transmittance, and the aperture opening ratio of the touch substrate and the display device where the touch substrate is located cannot be affected. Therefore, the pixel density of the display device is improved, and the display effect of the display device is improved.

In addition, the control signal line and the reading signal line of the transparent photosensitive device can be formed by multiplexing a first touch signal line and a second touch signal line. Therefore, the wiring design of the external signal wire of the transparent photosensitive device can be simplified, the preparation process of the touch substrate is simplified, and the preparation cost of the touch substrate is reduced.

In some embodiments, the transparent photosensitive device comprises a transparent phototransistor. In the embodiment of the disclosure, the transparent phototransistor is used as the light detection element, which has good and stable electrical characteristics, so as to realize accurate detection of the luminance of the pixel.

Optionally, the transparent phototransistor includes: the transparent photosensitive active layer, the gate dielectric layer and the transparent gate electrode are arranged in a stacked mode, and the transparent source electrode and the transparent drain electrode are respectively coupled with the transparent photosensitive active layer. The transparent grid is coupled with the first touch signal line. The transparent source electrode and the transparent drain electrode are coupled with the second touch signal line.

In some embodiments, the touch substrate further comprises an insulating layer. The transparent grid and the first touch signal line are positioned on the same side of the insulating layer. The transparent source electrode, the transparent drain electrode and the second touch signal line are positioned on one side of the insulating layer, which is far away from the transparent grid electrode.

In some embodiments, the first touch signal line includes: a first lead part and a first bonding part located at different layers. The transparent gate is coupled to the first lead portion or the first bonding portion. And/or the second touch signal line comprises: a second lead part and a second lap part located at different layers. The transparent source electrode and the transparent drain electrode are coupled with the second lead portion or the second lap portion.

In some embodiments, the first touch signal line includes a metal signal line or a transparent signal line. And/or the second touch signal comprises a metal signal line or a transparent signal line.

In the embodiment of the present disclosure, the first touch signal line and/or the second touch signal line are metal signal lines, which may have a lower resistance value and a better conductivity, so as to ensure the transmission accuracy of signals.

In addition, the first touch signal line and/or the second touch signal line adopt transparent signal lines, which is beneficial to arranging a part of layer structures in the transparent photosensitive device on the same layer, so that the preparation process of the transparent photosensitive device is simplified, and the preparation cost of the transparent photosensitive device is reduced.

In some embodiments, the plurality of first touch signal lines and the plurality of second touch signal lines intersect to form a grid; the transparent photosensitive devices are positioned in the meshes of the grid in a one-to-one correspondence. Therefore, the space utilization rate of the touch substrate is improved.

Optionally, the touch substrate further includes a plurality of sub-pixels. The sub-pixels correspond to the meshes of the grid one to one. The transparent photosensitive device is positioned on the light-emitting side of the sub-pixel. Therefore, the light-emitting brightness of each sub-pixel can be measured more accurately, and the touch substrate and the display device where the touch substrate is located have good brightness uniformity.

According to another aspect of the embodiments of the present disclosure, a display substrate is provided. The display substrate comprises an array substrate and a plurality of sub-pixels arranged on the array substrate. The sub-pixel comprises a light emitting device and a transparent photosensitive device positioned on the light emitting side of the light emitting device. The light emitting device includes a light emitting layer. The transparent photosensitive device includes a transparent phototransistor. The transparent phototransistor includes: the transparent photosensitive active layer, the gate dielectric layer and the transparent gate electrode are arranged in a stacked mode, and the transparent source electrode and the transparent drain electrode are respectively coupled with the transparent photosensitive active layer. The transparent photosensitive active layer at least partially overlaps with the orthographic projection of the light-emitting layer on the array substrate.

In the embodiment of the disclosure, the transparent photosensitive device is used as the light detection element to detect the light emitting brightness of the pixel, so that the arrangement position of the transparent photosensitive device is no longer limited by the non-pixel region. In this way, the transparent photosensitive device can have a larger lighting area, for example, the transparent photosensitive active layer in the transparent photosensitive device overlaps with the orthographic projection of the light emitting layer on the array substrate, so as to ensure higher compensation accuracy and signal-to-noise ratio. Meanwhile, the transparent photosensitive device has high light transmittance, and the aperture opening ratio of the display substrate and the display device where the display substrate is located cannot be affected. Therefore, the pixel density of the display device is improved, and the display effect of the display device is improved.

According to still another aspect of the embodiments of the present disclosure, there is provided a display device. The display device includes the touch substrate or the display substrate described in some embodiments above.

Drawings

Various additional advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the disclosure. Moreover, like reference numerals are used to refer to like elements throughout. In the drawings:

fig. 1 is a schematic top view of a touch substrate or a display substrate according to an embodiment of the disclosure;

fig. 2 is a schematic cross-sectional view illustrating a partial structure of a touch substrate according to an embodiment of the disclosure;

fig. 3 is a schematic cross-sectional view illustrating a partial structure of another touch substrate according to an embodiment of the disclosure;

fig. 4 is a schematic cross-sectional view illustrating a partial structure of a touch substrate according to another embodiment of the disclosure;

fig. 5 is a schematic top view illustrating a partial structure of a touch substrate according to another embodiment of the present disclosure;

FIG. 6 is a schematic cross-sectional view of a partial structure of the touch substrate shown in FIG. 5;

fig. 7 is a schematic top view illustrating a partial structure of a touch substrate according to another embodiment of the present disclosure;

FIG. 8 is a schematic cross-sectional view of a partial structure of the touch substrate shown in FIG. 7;

FIG. 9 is a schematic cross-sectional view illustrating a partial structure of a display substrate according to an embodiment of the present disclosure;

fig. 10 is a schematic cross-sectional view illustrating a partial structure of another display substrate according to an embodiment of the disclosure.

The reference numbers in the detailed description are as follows:

a substrate 01;

an array substrate 011, a pixel defining layer 012, a light emitting device 013, a pixel encapsulation layer 014;

a first touch signal line and a control signal line 1;

a second touch signal line and a read signal line 2;

a transparent photosensor 3;

a transparent photosensitive active layer 31, a gate dielectric layer 32, a transparent gate electrode 33, a transparent source electrode 34, and a transparent drain electrode 35;

an insulating layer 02; a planarization layer 03.

Detailed Description

To facilitate an understanding of the present disclosure, the present disclosure will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present disclosure are set forth in the accompanying drawings. This disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements are not intended to denote any order, quantity, or importance, but rather are used to distinguish one element from another. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein in the description of the disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure.

As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

The term "coupled," as used herein, may be a manner of making electrical connections for signal transmission. "coupled" is to be broadly interpreted, as including, for example, direct and indirect electrical connections via intermediate media.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the disclosure. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.

In the description of the embodiments of the present disclosure, the technical terms "row", "column", and the like indicate an orientation or a positional relationship based on that shown in the drawings only for convenience of describing the embodiments of the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the embodiments of the present disclosure.

In addition, in order to clearly show the plurality of layers and regions in the drawings, the thicknesses of the layers and the regions in the drawings are exaggerated to clearly illustrate the relative positions between the layers and the distribution of the regions. When a portion referred to as a layer, film, region, plate, or the like is "on" or "over" another portion, the description includes not only the case where "directly" over the other portion but also the case where another layer is present therebetween.

Organic Light Emitting diodes (OLEDs for short) are widely used in the display field because of their advantages of self-luminescence, high contrast, and low power consumption. In a display device using an OLED as a light emitting device, due to the material characteristics of the light emitting material inside the OLED, the OLED may age to different degrees with the use time, resulting in a decrease in the uniformity of the display brightness of the display device. Moreover, as the display area of the display device increases, the switching voltage of the driving transistor in the driving circuit corresponding to the OLED is also susceptible to the IR drop, which results in the uniformity of the display brightness of the display device being reduced. Therefore, the internal compensation circuit and/or the external compensation circuit are provided for the OLED in the display device, and the uniformity of the display luminance of the display device can be compensated.

In some examples, an external compensation circuit is provided in the display device to compensate for display brightness. The external compensation circuit is coupled with the light detection element and the driving chip. The external compensation circuit can generate a brightness compensation signal according to the display brightness sensed by the light detection element and transmit the brightness compensation signal to the driving chip. Therefore, the driving chip can control the OLED display according to the compensated driving voltage, and the display brightness of the display device is ensured to be uniform.

However, the light detecting element is disposed in the display region for collecting the luminance of the light emitted from the corresponding sub-pixel in the display region. The light detecting element often needs to occupy a partial area of the display area other than the pixel area. In addition, in order to ensure high compensation accuracy and signal-to-noise ratio, the light detection element also needs to have a large lighting area. Therefore, the aperture ratio of the display device is easily low, which is not favorable for improving the pixel density of the display device.

In order to solve the above problems, embodiments of the present disclosure provide a touch substrate, a display substrate, and a display device, which are used to improve an aperture ratio of the display device on the basis of ensuring brightness uniformity of the display device.

Referring to fig. 1, a touch substrate is provided in an embodiment of the present disclosure. The touch substrate includes: the touch panel comprises a plurality of first touch signal lines 1, a plurality of second touch signal lines 2 and a plurality of transparent photosensitive devices 3 arranged in an array.

The plurality of first touch signal lines 1 are arranged at intervals. The first touch signal line 1 extends in a first direction. Alternatively, the plurality of first touch signal lines 1 may be arranged in parallel.

The plurality of second touch signal lines 2 are disposed at intervals. The second touch signal line 2 extends in a second direction. Alternatively, the plurality of second touch signal lines 2 may be disposed in parallel.

Here, the first touch signal line 1 is, for example, a driving signal line Tx, and the second touch signal line 2 is, for example, an induction signal line Rx. The first direction and the second direction intersect, e.g. are perpendicular. The first direction is, for example, a row direction, and the second direction is, for example, a column direction. The interval between the adjacent first touch signal lines 1 and the adjacent second touch signal lines 2 may be determined according to the area size of the minimum touch unit.

The transparent photosensitive devices 3 are arranged in rows along a first direction and in columns along a second direction perpendicular to the first direction, and are used for detecting the brightness of the light emitted from the pixels. One transparent photosensitive device 3 may detect the luminance of light emitted from one or more pixel cells, or one transparent photosensitive device 3 may detect the luminance of light emitted from one or more sub-pixels. A row of transparent photosensitive devices 3 is correspondingly coupled to one first touch signal line 1. The first touch signal line 1 is configured to be multiplexed as a control signal line of the transparent photosensor 3. A row of transparent photosensors 3 is correspondingly coupled to one second touch signal line 2. The second touch signal line 2 is configured to be multiplexed as a read signal line of the transparent photosensor 3. The control signal line of the transparent photosensor 3 is used to transmit a control signal to the transparent photosensor 3 to control the operating state of the transparent photosensor 3. The reading signal line of the transparent photosensitive device 3 is used for reading the pixel light-emitting brightness signal sensed by the transparent photosensitive device 3.

Here, the transparent photosensor 3 is formed of a transparent material and has a high light transmittance. For example, the light transmittance of the transparent photosensor 3 is greater than 80%. The transparent photosensitive device 3 is used for detecting the light emitting brightness of the pixel, and the transparent photosensitive device 3 may be disposed on the light emitting side of the pixel, or may be integrated in the pixel and located on the light emitting side of the light emitting device in the pixel. The transparent photosensitive devices 3 may be arranged in one-to-one correspondence with the sub-pixels, or one transparent photosensitive device 3 may be arranged in correspondence with a plurality of sub-pixels, or one transparent photosensitive device 3 may be arranged in one-to-one correspondence with the pixel units, or one transparent photosensitive device 3 may be arranged in correspondence with a plurality of pixel units. The size and the setting position of the transparent photosensitive device 3 are not limited in the embodiment of the disclosure, and the limitation is that the transparent photosensitive device 3 can accurately collect the light-emitting brightness of the pixel.

It will be appreciated that the detection of the luminance of the pixel by the transparent photosensitive element 3 may be performed periodically or periodically. That is, the transparent photosensor 3 performs a preset or specified brightness detection stage on the detection side of the luminance of the pixel. Thus, the first touch signal line 1 may be reused as a control signal line of the transparent photosensor 3 in the brightness detection stage, and the second touch signal line 2 may be reused as a read signal line of the transparent photosensor 3 in the brightness detection stage. So as not to influence the use of the first touch signal line 1 and the second touch signal line 2 in the touch stage.

In the embodiment of the present disclosure, the transparent photosensitive device 3 is used as a light detecting element to detect the brightness of the light emitted from the pixel, so that the position where the transparent photosensitive device 3 is disposed is not limited to the non-pixel region. Namely: the transparent photosensitive device 3 may be arranged in the pixel area, e.g. directly above the pixel's light emission. Thus, the transparent photosensor 3 can have a large lighting area to ensure high compensation accuracy and signal-to-noise ratio. Meanwhile, the light transmittance of the transparent photosensitive device 3 is high, and the aperture ratio of the touch substrate and the display device where the touch substrate is located is not affected. Therefore, the pixel density of the display device is improved, and the display effect of the display device is improved.

In addition, the control signal line and the read signal line of the transparent photosensor 3 may be multiplexed by the first touch signal line 1 and the second touch signal line 2. Therefore, the wiring design of the external signal wire of the transparent photosensitive device 3 can be simplified, the preparation process of the touch substrate is simplified, and the preparation cost of the touch substrate is reduced.

Each of the first touch signal line 1 and the second touch signal line 2 may have a single-layer structure or a multi-layer stacked structure. The single-layer structure or the multi-layer stacked structure herein may be formed using at least one material of conductive metals such as aluminum (Al), platinum (Pt), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), chromium (Cr), molybdenum (Mo), titanium (Ti), tungsten (W), or copper (Cu) in consideration of conductivity thereof. Therefore, the first touch signal line 1 and the second touch signal line 2 adopt metal signal lines, and can have a lower resistance value and better conductivity, so as to be beneficial to ensuring the transmission precision of signals. Of course, it is also allowable that the single-layer structure or the multi-layer stacked structure herein is made of a transparent conductive material, such as Indium Tin Oxide (ITO). Therefore, the transparent photosensitive device and the first touch signal line 1 or the second touch signal line 2 can be arranged in the same layer to form a partial layer structure of the transparent photosensitive device, so that the preparation process of the transparent photosensitive device is simplified, and the preparation cost of the transparent photosensitive device is reduced.

Illustratively, each of the first and second touch signal lines 1 and 2 is a stack of titanium (Ti)/aluminum (Al)/titanium (Ti).

Please refer to fig. 2, the touch substrate further includes a substrate 01. The first touch signal line 1, the second touch signal line 2, and the transparent photosensor 3 are disposed on the substrate 01.

Here, the substrate 01 is, for example, a blank substrate on which no electronic device or circuit structure is fabricated, such as a glass substrate or a flexible substrate. The flexible substrate is, for example, a Polyimide (PI) substrate. Alternatively, the substrate 01 is a display substrate or a display panel, such as an array substrate, a counter substrate, or an OLED display substrate, on which electronic devices and/or circuit structures, etc. are fabricated. The embodiments of the present disclosure do not limit this.

In some embodiments of the present disclosure, please refer to fig. 1 to 4, in which a plurality of first touch signal lines 1 and a plurality of second touch signal lines 2 intersect to form a grid. One mesh in the grid corresponds to a minimum touch unit. The area size of each mesh can be selected and set according to actual requirements. The transparent light-sensitive devices 3 are positioned in the meshes of the grid in a one-to-one correspondence. Therefore, the space utilization rate of the touch substrate is improved.

In an example, referring to fig. 3, the touch substrate further includes a plurality of sub-pixels. Specifically, the substrate 01 of the touch substrate is an OLED display substrate. The substrate 01 includes an array substrate 011, and a pixel defining layer 012 disposed on the array substrate 011. The pixel defining layer 012 has a plurality of openings for defining pixel regions of the sub-pixels, respectively. The light emitting device 013 is disposed in the corresponding opening, for example, an OLED using top emission. The light emitting device 013 is coupled to a driver circuit in the array substrate 011, and can emit light under the driving of the driver circuit. The light emitting brightness of the light emitting device 013 is the light emitting brightness of the corresponding sub-pixel. The light emitting device 013 may correspond to a red OLED, a green OLED, a blue OLED, or a white OLED according to a display color of the sub-pixel.

In addition, a side of the light emitting device 013 facing away from the array substrate 011 is generally provided with a pixel encapsulation layer 014. The pixel encapsulation layer 014 can effectively encapsulate the light emitting device 013 to prevent water and oxygen from corroding the light emitting device 013, thereby affecting the lifespan and reliability of the light emitting device 013.

It is understood that in some examples, the pixel encapsulation layer 014 may cover the pixel defining layer 012 and the light emitting device 013 in each sub-pixel in a full layer, such as shown in fig. 3. In other examples, the pixel encapsulation layer 014 may also adopt a block structure to be correspondingly disposed in the opening of the pixel defining layer 012 to independently encapsulate the light emitting device 013, such as shown in fig. 4.

Each cell in the grid corresponds to a pixel area of one sub-pixel. The transparent photosensitive device 3 is disposed on the light emitting side of the sub-pixel, for example, on the side of the pixel encapsulation layer 014 facing away from the light emitting device 013. The transparent photosensitive device 3 may be provided as part of, i.e. integrated in, the corresponding sub-pixel. Therefore, the light-emitting brightness of each sub-pixel can be measured more accurately, and the touch substrate and the display device where the touch substrate is located have good brightness uniformity.

In some embodiments, with continued reference to fig. 2 and 3, transparent photosensitive device 3 is a transparent phototransistor. Thus, the transparent photosensitive device 3 has good and stable electrical characteristics, and is beneficial to realizing accurate detection of the brightness of the pixel. The structure of the transparent photosensitive device 3 is not limited thereto. The transparent photosensitive device 3 may also be a transparent photodiode, for example.

The structure of the transparent phototransistor can be implemented in a variety of ways. For example, the transparent phototransistor is a top gate type thin film transistor. Alternatively, for example, the transparent phototransistor is a bottom gate type thin film transistor.

Illustratively, the transparent phototransistor is a top-gate thin film transistor. The transparent phototransistor includes: a transparent photosensitive active layer 31, a gate dielectric layer 32, and a transparent gate electrode 33, which are stacked, and a transparent source electrode 34 and a transparent drain electrode 35, which are respectively coupled to the transparent photosensitive active layer 31. The transparent gate 33 is coupled to the first touch signal line 1. The transparent source 34 and the transparent drain 35 are coupled to the second touch signal line 2.

Optionally, the transparent photosensitive active layer 31 is formed by using a transparent Oxide semiconductor material such as Indium Gallium Zinc Oxide (ICZO), Indium Zinc Oxide (IZO), Zinc Tin Oxide (ZTO), aluminum Gallium nitride (AlGaN), or Gallium nitride (GaN). The forming process of the transparent photosensitive active layer 31 includes a magnetron sputtering process or a deposition process. The transparent photosensitive active layer 31 can generate different numbers of photo-generated carriers under different brightness illumination conditions, and then the magnitude of the current flowing through the transparent photosensitive transistor is also different. In the brightness detection stage, a control signal can be transmitted to the transparent photosensitive transistor through a control signal line of the transparent photosensitive device so as to enable the transparent photosensitive transistor to be conducted, and the magnitude of current output by a drain electrode of the transparent photosensitive transistor is read through a reading signal line of the transparent photosensitive device. Then, the brightness of the pixel can be detected according to the current of the transparent photosensitive transistor. The formation thickness of the transparent photosensitive active layer 31 may be selectively set according to actual requirements.

In one example, the transparent light-sensing devices 3 are integrated in the corresponding sub-pixels. The light-emitting device 013 in the sub-pixel includes a light-emitting layer. The transparent photosensitive active layer 31 at least partially overlaps with an orthographic projection of the light emitting layer on the array substrate 011. For example, an orthogonal projection of the light emitting layer on the array substrate 011 overlaps with an orthogonal projection of the transparent photosensitive active layer 31 on the array substrate 011. Alternatively, for example, also the orthographic projection of the light emitting layer on the array substrate 011 is located within the orthographic projection of the transparent photosensitive active layer 31 on the array substrate 011. In this way, the transparent photosensitive active layer 31 may have a large enough lighting area to ensure high compensation accuracy and signal-to-noise ratio, and is also beneficial to performing dodging processing on the optical signal emitted by the light emitting layer.

Optionally, the gate dielectric layer 32 is formed by using a transparent insulating material with a relatively high dielectric constant, such as a silicon oxide material, and the forming process is, for example, a deposition process.

Optionally, the transparent gate 33, the transparent source 34, and the transparent drain 35 are respectively made of a transparent conductive material, for example, Indium Tin Oxide (ITO), and the forming process is, for example, a magnetron sputtering process.

In one example, the transparent gate 33 is formed using a doped polysilicon material.

It should be added that in some examples, the transparent source 34 and the transparent drain 35 in the transparent phototransistor can be connected with metal traces located in the non-pixel area. Alternatively, the portions of the transparent source electrode 34 and the transparent drain electrode 35 in the non-pixel region may be formed using a metal material. That is, the transparent source electrode 34 and the transparent drain electrode 35 in the transparent phototransistor may include a non-transparent portion.

It should be noted that there are many ways to arrange the first touch signal line 1 and the second touch signal line 2 in the touch substrate.

In some embodiments, with continued reference to fig. 2 and 3, the touch substrate further includes an insulating layer 02. The number of layers of the insulating layer 02 may be one or more, and the material of the insulating layer 02 may be an organic insulating material or an inorganic insulating material.

Alternatively, the organic insulating material is, for example, polyimide or the like.

Alternatively, the inorganic insulating material is, for example, silicon oxide, silicon nitride, silicon oxynitride, or the like.

In addition, the first touch signal line 1 is formed by patterning the first conductive layer. The second touch signal line 2 is formed by patterning the second conductive layer. The first conductive layer and the second conductive layer are respectively located on both sides of the insulating layer 02.

Based on this, optionally, the transparent gate 33 may be located on the same side of the insulating layer 02 as the first touch signal line 1. The transparent source electrode 34, the transparent drain electrode 35 and the second touch signal line 2 may be located on a side of the insulating layer 02 away from the transparent gate electrode 33.

In some examples, the first touch signal line 1 is a transparent signal line, and the transparent gate 33 may be disposed on the same layer as the first touch signal line 1 and formed through a one-time patterning process. The transparent gate 33 may be used as a part of the first touch signal line 1 or a touch electrode connected to the first touch signal line 1.

In some examples, the second touch signal line 2 is a transparent signal line, and the transparent source electrode 34 and the transparent drain electrode 35 may be disposed on the same layer as the second touch signal line 2 and formed through a one-time patterning process. The transparent source electrode 34 and the transparent drain electrode 35 may be used as a part of the second touch signal line 2 or a touch electrode connected to the second touch signal line 2.

In other embodiments, referring to fig. 5 and 6, the first touch signal line 1 includes: a first lead part 11 and a first bonding part 12 which are located at different layers and are interconnected. The transparent gate electrode 11 is coupled to the first lead part 11 or the first bonding part 12.

For example, the second touch signal line 2 and the first lead portion 11 may be formed by patterning the first conductive layer. The first lap joint portion 12 may be formed by patterning the second conductive layer. The first conductive layer and the second conductive layer are respectively located on both sides of the insulating layer 02. Also, the first lead part 11 (i.e., the first conductive layer) is positioned at a side of the insulating layer 02 adjacent to the transparent gate 33, and the transparent gate 33 is coupled to the first lead part 11.

Based on this, optionally, the first conductive layer is a transparent conductive layer, and the transparent gate 33 may be disposed in the same layer as the first conductive layer and formed by a one-time patterning process. The transparent gate 33 may be used as the first lead portion 11.

Optionally, the second conductive layer is a metal conductive layer, and the first bonding portion 12 is a metal bonding portion.

Optionally, the second conductive layer is a transparent conductive layer. The transparent source electrode 34 and the transparent drain electrode 35 may be disposed at the same layer as the first strap 12 and formed through a single patterning process.

In still other embodiments, referring to fig. 7 and 8, the second touch signal line 2 includes: a second lead portion 21 and a second lap portion 22 which are located at different layers and are interconnected. The transparent source electrode 34 and the transparent drain electrode 35 are coupled to the second lead part 21 or the second lap part 22.

For example, the first touch signal line 1 and the second lead portion 21 may be formed by patterning the first conductive layer. The second strap 22 may be formed by patterning the second conductive layer. The first conductive layer and the second conductive layer are respectively located on both sides of the insulating layer 02. The second strap 22 (i.e., the first conductive layer) is located on a side of the insulating layer 02 facing away from the transparent gate 33; a transparent source 34 and a transparent drain 35 are coupled to the second landing 22.

Based on this, optionally, the first conductive layer is a transparent conductive layer, and the transparent gate 33 may be disposed in the same layer as the first conductive layer and formed by a one-time patterning process. The transparent gate 33 may be used as a part of the first touch signal line 1 or a touch electrode connected to the first touch signal line 1.

Optionally, the second conductive layer is a metal conductive layer, and the second bonding portion 22 is a metal bonding portion.

Optionally, the second conductive layer is a transparent conductive layer. The transparent source electrode 34, the transparent drain electrode 35 may be disposed at the same layer as the second lap joint part 22 and formed through a one-time patterning process. The transparent source electrode 34 and the transparent drain electrode 35 may be used as the second strap 22.

From the above, it can be understood that, in still other embodiments, the first touch signal line 1 may be composed of the first lead part 11 and the first lap part 12, and the second touch signal line 2 may be composed of the second lead part 21 and the second lap part 22.

Based on this, optionally, the first lead part 11 and the second bonding part 22 may be disposed in the same layer and on a side of the insulating layer 02 adjacent to the transparent gate 33, so that the transparent gate 33 is coupled to the first lead part 11. The first bonding portion 12 and the second lead portion 21 may be disposed at the same layer and on a side of the insulating layer 02 facing away from the transparent gate electrode 33, so that the transparent source electrode 34 and the transparent drain electrode 35 are coupled to the second lead portion 21.

In summary, the layer structure and connection relationship of the corresponding transparent phototransistor 3 can be adaptively adjusted according to the difference between the first touch signal line 1 and the second touch signal line 2. The embodiments of the present disclosure do not limit this.

In addition, the cross-sectional views in the embodiments of the disclosure only illustrate the layer structures of the transparent phototransistor, the first touch signal line and the second touch signal line, and do not show the connection relationship therebetween, nor limit the relative position relationship therebetween.

In some embodiments, referring to fig. 8, the touch substrate further includes a planarization layer 03. The planarization layer 03 covers the transparent photosensitive device 3 and the exposed surfaces of the first touch signal line 1 and the second touch signal line 2, is used for planarizing the surface of the touch substrate, and protects the transparent photosensitive device 3 and the first touch signal line 1 and the second touch signal line 2 in an insulating manner. The planarization layer 03 may be formed using a flexible organic material, such as Polyimide (PI).

According to another aspect of the embodiments of the present disclosure, a display substrate is provided. Referring to fig. 9, the display substrate includes an array substrate 011 and a plurality of sub-pixels disposed on the array substrate 011. The sub-pixel comprises a light emitting device 013 and a transparent photosensitive device 3 located at the light exit side of the light emitting device 013.

Here, the array substrate 011 has electronic devices and/or circuit structures, such as pixel driving circuits, fabricated thereon. The structure of the pixel driving circuit can be selected and set according to actual requirements.

In addition, the plurality of sub-pixels on the array substrate 011 may include sub-pixels not provided with the transparent photosensor 3. That is, the transparent photosensitive device 3 is not necessarily prepared in all the sub-pixels. The arrangement position of the transparent photosensitive device 3 can be selected according to actual requirements. The detection of the luminance of the pixel by the transparent photosensitive device 3 may be performed periodically or periodically. That is, the transparent photosensor 3 performs a preset or specified brightness detection stage on the detection side of the luminance of the pixel.

With continued reference to fig. 8, the display substrate further includes a pixel defining layer 012 and a pixel encapsulating layer 014.

The pixel defining layer 012 has a plurality of openings for defining pixel regions of the sub-pixels, respectively. The light emitting device 013 is disposed in the corresponding opening, for example, an OLED. The light emitting device 013 is coupled to a pixel driving circuit in the array substrate 011, and can emit light under the driving of the pixel driving circuit. The light emitting device 013 may correspond to a red OLED, a green OLED, a blue OLED, or a white OLED according to a display color of the sub-pixel.

The pixel encapsulation layer 014 is positioned at a side of the light emitting device 013 facing away from the array substrate 011. The pixel encapsulation layer 014 can effectively encapsulate the light emitting device 013 to prevent water and oxygen from corroding the light emitting device 013, thereby affecting the lifespan and reliability of the light emitting device 013.

It is understood that in some examples, the pixel encapsulation layer 014 may cover the pixel defining layer 012 and the light emitting device 013 in each sub-pixel in a full layer, such as shown in fig. 9. In other examples, the pixel encapsulation layer 014 may also adopt a block structure to be correspondingly disposed in the opening of the pixel defining layer 012 to independently encapsulate the light emitting device 013, for example, as shown in fig. 10.

In addition, the transparent photosensor 3 is formed using a transparent material, and has a high light transmittance. For example, the light transmittance of the transparent photosensor 3 is greater than 80%. Since the light-emitting luminance of the light-emitting device 013 is the light-emitting luminance of the corresponding pixel, the light-emitting luminance of the light-emitting device 013, that is, the light-emitting luminance of the pixel, can be directly detected by disposing the transparent photosensor 3 on the light-emitting side of the light-emitting device 013.

In the embodiment of the present disclosure, the transparent photosensitive device 3 is used as a light detecting element to detect the brightness of the light emitted from the pixel, so that the position where the transparent photosensitive device 3 is disposed is not limited to the non-pixel region. Namely: the transparent photosensitive device 3 may be integrated in the sub-pixel, for example, directly above the light emitted by the light emitting device 013. Thus, the transparent photosensor 3 can have a large lighting area to ensure high compensation accuracy and signal-to-noise ratio. Meanwhile, the transparent photosensitive device 3 does not affect the aperture opening ratio of the display substrate and the display device where the display substrate is located, and is beneficial to improving the pixel density of the display device, so that the display effect of the display device is improved.

It should be added that, as understood in conjunction with fig. 1 and fig. 9, the display substrate further includes: a plurality of control signal lines 1 arranged at intervals, and a plurality of read signal lines 2 arranged at intervals. Wherein, the control signal line 1 extends along the row direction, and a row of transparent photosensitive devices 3 is correspondingly coupled with one control signal line 1. The read signal lines 2 extend in the column direction, and a column of the transparent photosensors 3 is coupled to one of the read signal lines 2.

Alternatively, the control signal line 1 and the read signal line 2 may be obtained by patterning two conductive layers in the display substrate. The control signal line 1 and the read signal line may be metal signal lines or transparent conductive lines.

For example, each of the control signal line 1 and the read signal line 2 described above may adopt a single-layer structure or a multi-layer stacked structure. The single-layer structure or the multi-layer stacked structure herein may be formed using at least one material of conductive metals such as aluminum (Al), platinum (Pt), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), chromium (Cr), molybdenum (Mo), titanium (Ti), tungsten (W), or copper (Cu) in consideration of conductivity thereof. Therefore, the control signal line 1 and the reading signal line 2 adopt metal signal lines, and can have a lower resistance value and better conductivity, so as to be beneficial to ensuring the transmission precision of signals.

Of course, it is also allowable that the single-layer structure or the multi-layer stacked structure herein is made of a transparent conductive material, such as Indium Tin Oxide (ITO). Therefore, the arrangement of a part of layer structures in the transparent photosensitive device on the same layer as the control signal line 1 or the reading signal line 2 is facilitated, the preparation process of the transparent photosensitive device is simplified, and the preparation cost of the transparent photosensitive device is reduced.

Illustratively, each of the control signal line 1 and the read signal line 2 is a stack of titanium (Ti)/aluminum (Al)/titanium (Ti).

In some embodiments, continuing to refer to fig. 9, transparent photosensitive device 3 comprises a transparent phototransistor. Thus, the transparent photosensitive device 3 has good and stable electrical characteristics, and is beneficial to realizing accurate detection of the brightness of the pixel.

Illustratively, the transparent phototransistor is a top-gate thin film transistor. The transparent phototransistor includes: a transparent photosensitive active layer 31, a gate dielectric layer 32, and a transparent gate electrode 33, which are stacked, and a transparent source electrode 34 and a transparent drain electrode 35, which are respectively coupled to the transparent photosensitive active layer 31. The transparent gate 33 is coupled to the control signal line 1. The transparent source 34 and the transparent drain 35 are coupled to the read signal line 2.

Optionally, the transparent photosensitive active layer 31 is formed by using a transparent Oxide semiconductor material such as Indium Gallium Zinc Oxide (ICZO), Indium Zinc Oxide (IZO), Zinc Tin Oxide (ZTO), aluminum Gallium nitride (AlGaN), or Gallium nitride (GaN). The forming process of the transparent photosensitive active layer 31 includes a magnetron sputtering process or a deposition process. The transparent photosensitive active layer 31 can generate different numbers of photo-generated carriers under different brightness illumination conditions. The formation thickness of the transparent photosensitive active layer 31 may be selectively set according to actual requirements.

In some examples, light emitting device 013 includes a light emitting layer. The transparent photosensitive active layer 31 at least partially overlaps with an orthographic projection of the light emitting layer on the array substrate 011. For example, an orthogonal projection of the light emitting layer on the array substrate 011 overlaps with an orthogonal projection of the transparent photosensitive active layer 31 on the array substrate 011. Alternatively, for example, also the orthographic projection of the light emitting layer on the array substrate 011 is located within the orthographic projection of the transparent photosensitive active layer 31 on the array substrate 011. In this way, the transparent photosensitive active layer 31 may have a large enough lighting area to ensure high compensation accuracy and signal-to-noise ratio, and is also beneficial to performing dodging processing on the optical signal emitted by the light emitting layer.

It is understood that the display substrate may further include a flat layer or other layer structure to cover the exposed surfaces of the transparent photosensitive device 3 and the control signal lines 1 and the reading signal lines 2, for flattening the surface of the display substrate, and for insulation protection of the transparent photosensitive device 3 and the control signal lines 1 and the reading signal lines 2. The planarization layer may be formed using a flexible organic material, such as Polyimide (PI).

According to still another aspect of the embodiments of the present disclosure, there is provided a display device. The display device includes the touch substrate or the display substrate described in some embodiments above. The beneficial effects that can be achieved by the display device provided in some embodiments of the present disclosure are the same as those that can be achieved by the touch substrate or the display substrate provided in some embodiments, and are not repeated herein.

The above-described display device provided by some embodiments of the present disclosure may be any device that is applied to the field of display, whether moving (e.g., video) or stationary (e.g., still image), and whether textual or pictorial. More particularly, it is contemplated that the embodiments may be implemented in a variety of display devices.

Some embodiments of the present disclosure provide such display devices including, but not limited to, mobile telephones, wireless devices, personal data assistants (PAD), handheld or Portable computers, GPS (Global Positioning System) receivers/navigators, cameras, MP4 (all MPEG-4Part 14) video players, camcorders, television monitors, flat panel displays, computer monitors, aesthetic structures (e.g., for displays displaying images of a piece of jewelry), and the like.

Where the terms "comprising," "having," and "including" are used herein, another element may be added unless an explicit limitation is used, such as "only," "consisting of … …," etc. Unless mentioned to the contrary, terms in the singular may include the plural and are not to be construed as being one in number.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present disclosure, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the concept of the present disclosure, and these changes and modifications are all within the scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the appended claims.

Claims

1. A touch substrate, comprising:

a plurality of first touch signal lines arranged at intervals;

a plurality of second touch signal lines arranged at intervals;

the plurality of transparent photosensitive devices are arranged in an array along a first direction and a second direction and used for detecting the light-emitting brightness of the pixels, and the first direction is intersected with the second direction;

the first touch signal line extends along a first direction; a row of the transparent photosensitive devices is correspondingly coupled with one first touch signal line; the first touch signal line is configured to be multiplexed as a control signal line of the transparent photosensitive device;

the second touch signal line extends along a second direction; a row of the transparent photosensitive devices is correspondingly coupled with one second touch signal line; the second touch signal line is configured to be multiplexed as a read signal line of the transparent photosensor.

2. The touch substrate of claim 1, wherein the transparent photosensitive device comprises a transparent phototransistor.

3. The touch substrate of claim 2, wherein the transparent phototransistor comprises: the grid electrode comprises a transparent photosensitive active layer, a grid dielectric layer, a transparent grid electrode, a transparent source electrode and a transparent drain electrode, wherein the transparent photosensitive active layer, the grid dielectric layer and the transparent grid electrode are arranged in a stacked mode;

wherein the transparent gate is coupled to the first touch signal line;

the transparent source electrode and the transparent drain electrode are coupled with the second touch signal line.

4. The touch substrate of claim 3, further comprising an insulating layer; wherein,

the transparent grid and the first touch signal line are positioned on the same side of the insulating layer;

the transparent source electrode, the transparent drain electrode and the second touch signal line are positioned on one side of the insulating layer, which is far away from the transparent grid electrode.

5. The touch substrate of claim 3,

the first touch signal line includes: a first lead portion and a first lap portion which are located at different layers and are interconnected; the transparent gate is coupled with the first lead part or the first lap joint part;

and/or, the second touch signal line includes: a second lead portion and a second strap portion located at different layers and interconnected; the transparent source electrode and the transparent drain electrode are coupled with the second lead part or the second lap part.

6. The touch substrate of claim 1,

the first touch signal line comprises a metal signal line or a transparent signal line;

and/or the second touch signal comprises a metal signal line or a transparent signal line.

7. The touch substrate according to any one of claims 1 to 6, wherein a plurality of the first touch signal lines and a plurality of the second touch signal lines intersect to form a grid; the transparent photosensitive devices are positioned in the meshes of the grid in a one-to-one correspondence.

8. The touch substrate of claim 7, wherein the touch substrate further comprises a plurality of sub-pixels; the sub-pixels correspond to meshes of the grid one by one; the transparent photosensitive device is positioned on the light emitting side of the sub-pixel.

9. A display substrate is characterized by comprising an array substrate and a plurality of sub-pixels arranged on the array substrate;

the sub-pixel comprises a light-emitting device and a transparent photosensitive device positioned on the light-emitting side of the light-emitting device;

wherein the light emitting device includes a light emitting layer; the transparent photosensitive device comprises a transparent phototransistor;

the transparent phototransistor includes: the grid electrode comprises a transparent photosensitive active layer, a grid dielectric layer, a transparent grid electrode, a transparent source electrode and a transparent drain electrode, wherein the transparent photosensitive active layer, the grid dielectric layer and the transparent grid electrode are arranged in a stacked mode; the transparent photosensitive active layer at least partially overlaps with an orthographic projection of the light emitting layer on the array substrate.

10. A display device, comprising:

the touch substrate according to any one of claims 1 to 8;

or, a display substrate as claimed in claim 9.