WO2024042076A1 - Procédé de revêtement pour déposer un système de revêtement sur un substrat et substrat doté d'un système de revêtement - Google Patents

Procédé de revêtement pour déposer un système de revêtement sur un substrat et substrat doté d'un système de revêtement Download PDF

Info

Publication number
WO2024042076A1
WO2024042076A1 PCT/EP2023/073028 EP2023073028W WO2024042076A1 WO 2024042076 A1 WO2024042076 A1 WO 2024042076A1 EP 2023073028 W EP2023073028 W EP 2023073028W WO 2024042076 A1 WO2024042076 A1 WO 2024042076A1
Authority
WO
WIPO (PCT)
Prior art keywords
dcms
hipims
layer
mode
sputtering
Prior art date
Application number
PCT/EP2023/073028
Other languages
German (de)
English (en)
Inventor
Jörg Vetter
Jürgen Müller
Original Assignee
Oerlikon Surface Solutions Ag, Pfäffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag, Pfäffikon filed Critical Oerlikon Surface Solutions Ag, Pfäffikon
Publication of WO2024042076A1 publication Critical patent/WO2024042076A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/067—Borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS

Definitions

  • Substrate as well as a substrate with a layer system
  • the invention relates to a coating method using magnetron sputtering, wherein a layer system is deposited on a substrate alternately in a HIPIMS mode and in a DCMS mode, as well as a substrate with such a layer system according to the preamble of the independent claim of the respective category.
  • Magnetron sputtering is a PVD method (Physical Vapor Deposition) that is now firmly established as a standard method in science and technology and is used in particular in different variants to coat substrates with thin layers.
  • PVD Physical Vapor Deposition
  • thermoresistive coatings for tools and machine parts of all kinds
  • decorative coatings for optical coatings and is used very successfully for coating substrates in a variety of other applications.
  • a vapor of atoms or molecules is generated in an evacuated process chamber from a target comprising a coating material, which are then deposited on the substrate to be coated.
  • the vapor itself is created by knocking out the atoms or molecules from the target using an ionized working gas (sputtering gas), which is usually an inert gas, often a noble gas such as argon (Ar) or krypton (Kr).
  • sputtering gas which is usually an inert gas, often a noble gas such as argon (Ar) or krypton (Kr).
  • the ions of the working gas are released by an electrical discharge, which leads to the generation of electrons, which in turn form the gas ionize, generated.
  • a magnetic field is generated in the vicinity of the target, which forces the generated electrons into a kind of electron cloud, which leads to a concentration of the electrons in front of the surface of the target, which enables increased ionization of the sputtering gas.
  • the target is at a lower electrical potential than the area in which the electron cloud is positioned. This accelerates the positive ions towards the target and knocks atoms or molecules of the coating material out of the target. The released atoms or molecules ultimately deposit on all surfaces within the process chamber and thus also on the surface of the substrate to be coated.
  • MS achieves relatively high ionization efficiencies due to the magnetic confinement of the electron cloud. The result of this is that only a relatively low electrical power is required while at the same time high sputtering rates.
  • the loss of electrons perpendicular to the magnetic field lines can also be greatly reduced, thereby minimizing the impact of these on the substrate and thus significantly reducing the heating of the substrate, in particular of the coating growing on the substrate.
  • MS enables the use of a wide variety of available materials.
  • less conductive materials as well as brittle materials such as Si, B, Ti, TiB2 SiC, B4C, M0S2, WS2 and many other materials can also be sputtered.
  • MS as a coating process is also ideal for reactive sputtering using reactive process gases, such as C2H2, NH3, Ar, N2, O2 and their mixtures, as well as a variety of other reactive process gases.
  • reactive process gases such as C2H2, NH3, Ar, N2, O2 and their mixtures
  • the sputtered atoms or molecules react with the reactive process gases, with the reaction products ultimately forming the coating on the substrate.
  • MS magnetron sputtering
  • DCMS DC magnetron sputtering
  • DCMS Compared to other sputtering processes, DCMS enables high layer rates when building up the coatings on the substrate. Since a low substrate temperature can be guaranteed during the coating process, it is also possible to coat sensitive materials.
  • Advantageous properties of coatings produced by DCMS include high adhesion of the coatings to the substrate as well as low porosity and lower defect densities in the layers.
  • magnetically assisted DCMS causes little radiation damage to the substrate being coated.
  • a major disadvantage of MS in general and of DCMS in particular is the low utilization of the target, which is well known to those skilled in the art, and the associated effect that the deposited layers often have uneven thicknesses.
  • the reason for this is that due to the low energy (temperature) that the electrons have, the ionization of the sputtering gas takes place in a very localized manner and the location of the ionization regions is thus imaged on the target surface, which leads to uneven erosion or wear of the target (formation of sputtering trenches), which in turn means that only a limited part of the target can be used until it has eroded through.
  • the layers produced by DOMS are often characterized by pronounced columnar growth due to the relatively low ionization of the sputtered material, which unfortunately often leads to a disadvantage in the functionality of the layers in many applications.
  • HiPIMS High Power Impulse Magnetron Sputtering
  • the Current densities at the target in HiPIMS typically significantly exceed those of classic DCMS, ie they are often well above 0.1 A/cm 2 and up to a few A/cm 2 , so that power densities range from a few 100W/cm 2 up to MW/cm 2 can be in contact with the target for a short time.
  • HiPIMS is characterized by a higher plasma density and therefore a significantly higher ionization capacity of the working gas and the reactive gas, especially the proportion of ionized sputtered target atoms.
  • the process pressure in the process chamber is in a pressure range of approximately 10' 4 Torr to 10 -2 Torr (approx. 0.013 Pa to 1.3 Pa).
  • a maximum cathode current density is in the range of Jmax ⁇ 0.1 A/cm 2 , with the discharge voltages in the range of approximately 0.3kV to 0.6kV.
  • cathode current density and discharge voltage corresponding cathode power densities are usually selected in the range of less than 0.1 kW/cm 2 .
  • the particle number n is approximately 1 O 20 atoms per m 3
  • cathode power densities are usually set in a range from approximately 1 kW/cm 2 to approximately 3 kW/cm 2 in a HiPIMS process.
  • the particle number n is approx. 1O 20 atoms per m 3
  • approx. 3'10 19 up to approx. 9' can be formed in a HiPIMS sputtering process.
  • 10 19 of all gas neutral particles in the mixture of process gas and target material i.e. an enormous proportion of between approx. 30% and 90% of all neutral particles, are ionized. This means that an enormous ionization fraction of between approx. 30% and 90% is achieved.
  • the ionized target atoms can form a volume fraction of up to 90%.
  • All sputtering techniques have an inherent performance limit, which is determined by the coolability of the target and the target material itself. If the temperature on the target surface cannot be dissipated quickly enough, the target material melts.
  • the upper limit of the power densities on the target is usually in the range of at most 50W/cm 2 . This maximum load limit in continuous DCMS operation is often only a maximum of 20W/cm 2 .
  • the discharge In order to further increase the power without overheating the target, the discharge must be pulsed. The increasing energy input and the associated temperature development on the target surface can be compensated for by reducing the duty cycle. For this purpose, the sputtering frequencies and pulse lengths are varied in the high-performance range.
  • the high degree of ionization of the sputtered target atoms when using a HiPIMS process offers improved control of layer growth and layer structure.
  • an electrical substrate bias voltage Bias voltage
  • the energy of the incoming ions can also be controlled and the latter can be controlled specifically.
  • Targeted ion bombardment using sputtering gas ions e.g. Ar
  • the ions of the sputtered target material can have a significant influence on the structure and layer properties, as well as crystal orientation, grain size, density and mechanical layer tension.
  • the high degree of ionization enables the layer quality to be improved through higher density and hardness, improved layer adhesion and lower roughness.
  • HiPIMS Key features of the HiPIMS are peak currents and peak power densities that are up to several orders of magnitude higher than their average power density.
  • HiPIMS layers Another very important advantage of the HiPIMS layers is the extremely high thermal stability, which results, among other things, from the denser layer structure.
  • HiPIMS can improve the layer adhesion
  • HiPIMS layers are particularly advantageous for use, for example, in the coating of cutting tools, which can therefore be manufactured with significantly increased cutting parameters and are characterized by much lower tool wear during operation.
  • the deposition rate and thus the speed of layer growth is also significantly reduced in HiPIMS processes compared to DCMS processes, both in reactive and non-reactive processes.
  • the deposition rates and thus the coating rates with HiPIMS can be reduced by up to 70% compared to DCMS.
  • a main cause of the lower coating rates of the HiPIMS discharge compared to the DCMS discharge with the same input energy is the backflow effect of the ions. This is essentially caused by the fact that a proportion of the positively charged ions of the sputtered target material are drawn back to the day, which is negatively biased, due to the spatial plasma potential distribution during the high-voltage pulse. This results in “self-sputtering” of the target. This is also referred to as “re-deposition”. Unfortunately, this negative effect is precisely a characteristic of the HiPIMS sputtering process. Finally, the problem of “arcing”, which is well known to those skilled in the art, is significantly higher in HiPIMS processes than in DCMS processes.
  • arcing to mean unwanted discharges that can be observed, for example, on sputtering targets. These discharges are local, time-limited cathodic vacuum arc discharges. Arcing leads in particular to uneven coating, particularly through the formation of undesirable particles that have a negative impact on the coatings.
  • the energy consumption per slice volume with HiPIMS is significantly higher than when using a DCMS process.
  • hybrid methods are also known in the prior art, which use one or more identical or different magnetrons or sputtering sources in different variants of HiPIMS methods and DCMS -Use processes to form coatings on a substrate simultaneously in the same process step.
  • the gas pressure in the process chamber or the bias voltage on the target can either only be used for the HiPIMS portion of the hybrid process or only for the DCMS portion of the hybrid process can be optimized. Or you have to look for compromises for these or other process parameters, which then do not lead to sufficiently optimal coating results.
  • the coating rates BR in both the HiPIMS and the DCMS process depend sensitively on the one hand on the magnetic field strength MFS of the magnetic field in front of the target and on the pulse frequencies of the HiPIMS or DCMS pulse sequences, as shown for example in FIG. 4 ( J W Bradley et al 2015 J. Phys. D Appl.
  • Magnetic field strength MFS of the magnetic field increases, increases in HiPIMS processes the coating rate BR decreases with increasing magnetic field strength MFS of the magnetic field. Note that in Fig. 4 the magnetic field strength MFS of the magnetic field increases to the left.
  • this of course means that the magnetic field strength MFS of the magnetic field can either only be optimally adapted to the HiPMS process or only to the DCMS process, or that a compromise has to be made with regard to the magnetic field strength MFS of the magnetic field, so that the magnetic field strength MFS of the magnetic field cannot be selected either optimally for the HiPIMS process or optimally for the DCMS process.
  • the object of the invention is therefore to provide an improved coating process for producing a multilayer system by means of magnetron sputtering and, as a result, a substrate with an improved layer system, whereby all the advantages of the HiPIMS and those of the DCMS process can be optimally realized at the same time, without the disadvantages of the known hybrid processes.
  • the invention therefore relates to a coating method for depositing a layer system on a substrate, wherein at least one HiPIMS layer and one DCMS layer are deposited on the substrate by means of magnetron sputtering.
  • one and the same primary target is used in any order and one after the other the HiPIMS layer is alternately deposited from the coating material by a HiPIMS sputtering process in a HiPIMS mode using a sequence consisting of a plurality of HiPIMS discharge pulses of high power density with a pulse duration of at least one atomic layer, and the DCMS layer is deposited by a pulsed and/or or unpulsed DCMS sputtering process in a DCMS mode using a DCMS discharge pulse of low power density with pulse duration to form the DCMS layer from the coating material.
  • the present invention has made it possible for the first time to successfully combine the HiPIMS sputtering process and the DCMS sputtering process in a single coating process in such a way that, for the first time, essentially all of the advantages of the DCMS sputtering process and essentially all of the advantages of the HiPIMS sputtering process for the formation of layer systems on a substrate can be exploited at the same time without having to compromise on the coating parameters in favor or disadvantage of the HiPIMS sputtering process or the DCMS sputtering process.
  • a coating process according to the invention therefore has practically all of the advantages of DCMS sputtering, such as high coating rates, ensuring a low substrate temperature for coating sensitive materials, high adhesive strength of the coatings on the substrate, low porosity and lower defect densities in the layers, while at the same time being low Radiation damage to the substrate to be coated due to the magnetic field of the magnetron, as well as lower energy consumption.
  • a coating process according to the invention also shows all the advantages of the HiPIMS sputtering processes known per se.
  • Targeted ion bombardment using sputtering gas ions (e.g. Ar) and in particular the ions of the sputtered target material can have a significantly positive influence on the structure and layer properties, as well as crystal orientation, grain size, density and mechanical layer tension.
  • the high degree of ionization in HiPIMS sputtering enables a significant improvement in layer quality through higher density and hardness, even further improved layer adhesion, and lower roughness.
  • HiPIMS coatings produced using HiPIMS include, in particular, denser layer morphology and less columnar layer growth. This can lead to higher hardness with different layer systems, such as AITiN layers. Another very important advantage of the HiPIMS layers is the extremely high thermal stability, which results, among other things, from the denser layer structure.
  • the problem of the relatively low deposition rate and thus the speed of layer growth (coating rate) is also significantly reduced with pure HiPIMS processes in relation to the entire layer system. This applies to both reactive and non-reactive processes.
  • the deposition rates in a method according to the invention can be easily adjusted according to the invention, depending on the process control and the ratio of the layer thicknesses of HiPIMS partial layers to DCMS partial layers of a layer system according to the invention, and thus the coating rates compared to coatings that are only deposited using a HiPIMS sputtering method, for example e.g. 15% or 50% and up to 90% or more.
  • this essential disadvantage of the HiPIMS sputtering process is at least partially exploited positively.
  • a major disadvantage of magnetron sputtering in general and of pulsed or non-pulsed DCMS in particular is the low utilization of the target and the associated effect that the deposited layers often have uneven thicknesses.
  • the reason for this is that the ionization of the sputtering gas takes place in a very localized manner and the location of the ionization regions is thus imaged on the target surface, which leads to uneven erosion or wear of the target (formation of sputtering trenches), which in turn leads to only one A limited part of the target can be used until it has eroded through.
  • the above-described, inherently negative re-deposition effect of the HiPIMS sputtering process suddenly has a surprisingly positive effect in a H iPIMS step following a DCMS step due to the present invention.
  • the re-deposition effect in the HiPIMS process step caused by the "backflow" of the sputtered target ions leads to target ions that have already been sputtered returning to the target, re-depositing on the target surface and thus the "damaged" by the previously carried out DCMS sputtering.
  • the targets can not only be used for much longer than with a pure DCMS sputtering process, but the DCMS partial layers become more uniform when using a coating process according to the invention, i.e. have, among other things, a significantly more uniform thickness than when using a known one pure DCMS sputtering process.
  • the known and above-described problem of “arcing” in HiPIMS processes is also significantly reduced overall in relation to the formation of the layer system. Simply because the HiPIMS process steps are only used during part of the entire coating process, i.e. not over the entire coating period.
  • the coating process according to the invention shows significantly better properties and leads to significantly improved properties of the layer systems according to the invention.
  • the coating process according to the invention should under no circumstances be confused with the hybrid coating processes already discussed above.
  • the coating process of the present invention has very significant advantages, particularly in comparison to the known hybrid processes from the prior art, in which HiPIMS sputtering processes and DCMS sputtering processes are carried out simultaneously or overlapping in time, which are fundamentally not the case with the known hybrid processes can be achieved.
  • such known hybrid processes have significant process-related disadvantages or impose restrictions on the coating processes that can essentially be completely avoided by the present invention.
  • HiPMS and DCMS methods are used simultaneously, i.e.
  • the gas pressure in the process chamber or the bias voltage on the target or the magnetic field strength on the target can either only be used for the HiPIMS portion of the hybrid process or only for the DCMS portion of the hybrid process can be optimized. Or you have to look for compromises for these or other process parameters, which then do not lead to sufficiently optimal coating results.
  • the magnetic field strength of the magnetic field in front of the magnetron can easily be optimally adapted to both the HiPIMS process and the DCMS process separately, without having to make a compromise with regard to the magnetic field strength of the magnetic field , as with the well-known hybrid processes.
  • Typical magnetic field strengths are, for example, in the range from approx. 50Gauss to approx. WOOGauss.
  • magnetic field strengths in the range of approximately 50Gauss to 600Gauss are advantageously selected for the HiPIMS process, while typical magnetic field strengths for the DCMS process are often in the range of approximately 300Gauss to WOOGauss.
  • HiPIMS and DCMS are not used simultaneously according to the invention, but are decoupled from one another in time.
  • the maximum power density of the HiPIMS discharge pulse on the primary target is preferably in a range of 0.05kW/cm 2 and 10kW/cm 2 , preferably 0.1 kW/cm 2 and 5kW/cm 2 , in particular from 0.2kW/cm 2 to 3kW/cm 2 , particularly preferably at approximately 0.4kW/cm 2 or 2kW/cm 2 , whereby in HiPIMS mode in the sequence of HiPIMS discharge pulses, the pulse duration of the HiPIMS discharge pulse is between 5ps and 20ms, preferably between 20ps and 10ms, in particular at approximately 50ps to 5ms and / or in HiPIMS mode a HiPIMS dead time in the sequence of HiPIMS discharge pulses between two successive HiPIMS discharge pulses between 100ps and 500ms, preferably between 250ps and 250ms, in particular between approximately 500ps and 150ms, and / or wherein a HiPIMS duty cycle of
  • the pulse duration of the HiPIMS discharge pulse and / or the duration of the HiPIMS death time and / or the HiPIMS duty cycle during the deposition of the Shift system is changed according to a predeterminable scheme.
  • This procedure can be used advantageously, for example, to optimize the layer properties or sub-layers with varying ones To create layer properties such as adhesive strength, hardness, internal stresses, thermal resistance, elastic modulus and other varying or different properties.
  • the gradient layers according to the invention mentioned later can also be generated in this way.
  • the power density of the DCMS discharge pulse on the primary target is preferably in a range of 1W/cm 2 and 50W/cm 2 , preferably between 2W/cm 2 and 30W/cm 2 , particularly preferably approximately 5W /cm 2 to 25W/cm 2 is selected, and / or in the pulsed and / or unpulsed DCMS mode, the pulse duration of the DCMS discharge pulse is advantageously but not necessary between 1 ps and 10ms, preferably between 5ps and 500ps, in particular at approx.
  • a DCMS death time in a sequence of DCMS discharge pulses between two successive DCMS discharge pulses in practice is often between 0.5ps and 10ms, preferably between 2ps and 300ps, in particular at approx. 5ps to 100ps is selected, and / or wherein a DCMS duty cycle of a sequence of DCMS discharge pulse and DCMS death time is between 30% and 99%, preferably between 50% and 97%, particularly preferably at approximately 75% or 95% of Duration of the sequence from DCMS discharge pulse and DCMS death time is selected.
  • the pulse duration of the DCMS discharge pulse and / or the duration of the HiPIMS death time and / or the HiPIMS duty cycle during the deposition of the layer system can be after a predetermined scheme can be changed.
  • Such manipulation of the parameters of the DCMS pulse sequences can also be used advantageously to optimize the layer properties of a layer system according to the invention or to create partial layers with varying layer properties such as adhesive strength, hardness, internal stresses, thermal To create resistance, elastic modulus and other varying or different properties.
  • the gradient layers according to the invention mentioned later can also be generated in this way.
  • the HiPIMS discharge pulse of high power density and/or DCMS discharge pulse of low power density is a rectangular and/or a triangular and/or a needle-shaped discharge pulse, in particular a bipolar discharge pulse or a bipolar sequence of discharge pulses, as are known per se are and e.g. in Figs. 3a to 3f. are shown schematically.
  • the HiPIMS layer can be deposited in the HiPIMS mode and/or the DCMS layer in the DCMS mode using a reactive and/or a non-reactive sputtering process, the HiPIMS layer being deposited in the HiPIMS -Mode using an HP process gas and the DCMS layer is deposited in the DCMS mode using a DC process gas different from the HP process gas, and / or wherein the HP process gas and / or the DC process gas is preferably a mixture of a number of different reactive gases are used.
  • a composition of the HP process gas and / or during the deposition of the DCMS layer in the DCMS mode can be varied, for example, but not only, to form a gradient layer with regard to its chemical composition or to optimize the layer properties or partial layers with varying layer properties such as adhesion, hardness, internal stresses, thermal To create resistance, elastic modulus and other varying or different properties.
  • a partial pressure of the HP process gas can be used during the deposition of the HiPIMS layer in the HiPIMS mode and / or during the deposition of the DCMS layer in the DCMS mode a partial pressure of the DC process gas can be varied.
  • an HP bias voltage of the substrate can be different from a DC bias voltage during deposition of the DCMS layer can be selected in DCMS mode and / or during the deposition of the HiPIMS layer in HiPIMS mode the HP bias voltage can be varied and / or during the deposition of the DCMS layer in DCMS mode the DC can also be varied Bias voltage of the substrate can be advantageously varied.
  • a magnetic field strength of the magnetic field source during the pulsed and / or unpulsed DCMS sputtering process can be selected to be different from a magnetic field strength of the magnetic field source during the HiPIMS sputtering process.
  • a mechanical adjustment device for example by means of a stepper motor or other mechanical adjustment units that are known to those skilled in the art, which determine the position and/or orientation of the magnetic field source in relation to the magnetron or in relation to the primary Target can be changed or adjusted so that the magnetic field strength at the location or in the surroundings of the magnetron or the primary target can be variably adjusted to a predetermined value.
  • the magnetic field strength can be controlled in a manner known per se by varying a current via an electromagnetic coil, which can be provided in the vicinity of the magnetron and / or the primary target the electromagnetic coil is changed or adjusted so that the magnetic field strength at the location or in the surroundings of the magnetron or the primary target can be variably adjusted to a predetermined value.
  • the HiPIMS layer and/or the DCMS layer can be deposited as a gradient layer as described, which can be particularly advantageous depending on the application, as the person skilled in the art knows.
  • the gradient layer can be formed, among other things, by varying the chemical composition of the HP process gas and/or by varying the chemical composition of the DC process gas or using other measures known per se. Since, in addition to the described sequences of HiPIMS and DCMS layers deposited directly on top of one another according to the invention, other types of partial layers can also be provided in layer systems according to the invention that are complex in terms of layer structure and layer structure, a plurality of identical or different magnetrons can also be included in a process chamber for carrying out the invention Primary target, in particular comprising different coating materials, can be provided, and/or at least one further magnetron with a target with a further coating material can be provided in the process chamber.
  • a process time for producing the HiPIMS layer and/or the DCMS layer produced in an unpulsed and/or pulsed DCMS sputtering process is, for example, in the range from 0.5s to 10,000s, preferably 1s to 5000s, in particular from approximately 5s to 2500s , where a ratio of the proportions of the sum of the layer thicknesses of the HiPIMS layers divided by the sum of the layer thicknesses of the DCMS layers produced in an unpulsed and / or pulsed DCMS sputtering process within the overall layer z.
  • a thickness of the individual layer which can be varied in layer thickness, in a layer system consisting of the HiPIMS layers and the DCMS layers produced in an unpulsed and / or pulsed DCMS sputtering process can be in a range from 1 nm to 5000 nm, preferably in a range from 2 nm to 500nm, in particular in a range from 5nm to 250nm.
  • layer systems Two specific exemplary embodiments of layer systems will be described below, one layer system being deposited using a non-reactive sputtering process according to the invention and another layer system being deposited using a reactive sputtering process according to the invention.
  • layer systems according to the invention made of TiB or AITiN were used Use of a rectangular primary target with a length of approx.
  • Embodiment 1 (non-reactive process)
  • a non-reactive coating process according to the invention was used as an example for the deposition of TiB2 hard material layers, which is explained below as an example for all other non-reactive coating processes, including for metals and their alloys, silicon and others.
  • a target power of approximately 4.5 kW was selected for the bonded TiB2 target mounted on the magnetron.
  • the flow of argon used as sputtering gas was 120 sccm.
  • a negative bias voltage of 125V was applied to the substrate holder.
  • the coating time was 2 hours.
  • a modulated layer consisting of a HiPIMS single layer with a deposition time of 4 min plus a pulsed DCMS single layer with a deposition time of 2 min was deposited within 2 hours.
  • the result was an alternating layer structure, as shown in general and as an example in Fig. 2c, whereby, depending on the process, either the HiPIMS layer or the DCMS layer was of course applied directly to the substrate.
  • Table 1 The most important deposition parameters and the results are summarized in Table 1 below.
  • the pulsed DCMS process which does not belong to the HiPIMS discharges, is characterized by typical values for this process.
  • the HiPIMS process is characterized by typical peak values.
  • the maximum current density of 0.48 A/cm 2 is 30 times greater than in the pulsed DCMS process, the peak power density is approx. 350W/cm 2 .
  • the absolute peak power is 189kW.
  • the layer sequence of pulsed DCMS and HiPIMS resulting from the layer rate of 0.67 m/h results in a thickness of the double layer of approx. 66nm.
  • a HiPIMS single layer has approx. 36nm and a pulsed DCMS single layer has approx. 30nm.
  • Table 1 Process parameters for deposition of a TiB2 layer system.
  • the coating rates were determined using a method well known to those skilled in the art using dome grinding.
  • the hardness was measured with a load of 30mN using a Berkovich diamond and the internal stresses were determined using a bending method in a manner known per se.
  • the method according to the invention shows a significant increase in the coating rate compared to the pure HiPIMS method in the direction of the rate of the pulsed DCMS method.
  • a reduction in the internal stress state compared to the HiPIMS process could also be achieved without a significant loss of hardness.
  • Embodiment 2 (reactive process)
  • a reactive coating process for the deposition of AITiN hard material layers was implemented, which is representative of all other possible reactive processes with different reactive gases.
  • a target power of 10 kW was selected for the targets with the composition 55 at% Al and 45 at%.
  • the flow of argon used as sputtering gas was 120 sccm.
  • a stepped preload of 40V, 80V and 120V were applied to the substrate holder for one third of the total coating time.
  • the coating time for the HiPIMS was
  • Table 2 Process parameters for deposition of an AITiN layer system.
  • the coating rates were determined using a method well known to those skilled in the art using dome grinding.
  • the hardness was measured with a load of 30mN using a Berkovich diamond and the internal stresses were determined using a bending method in a manner known per se.
  • the pulsed DCMS process which does not belong to the HiPIMS discharges, is characterized by typical values for this process.
  • the maximum current density of 0.034 mA/cm 2 which is constant throughout the entire pulse (power 10kW), corresponds to a power density of 19W/cm 2 .
  • the HiPIMS process is characterized by typical peak values in the pulse.
  • the maximum current density of 1.43A/cm 2 is 42 times greater than in the pulsed DCMS process, the peak power density is approx. 1180W/cm 2 .
  • the absolute peak power is 618kW.
  • the single layer thicknesses within a HiPIMS-DCMS double layer were 135nm for the HiPIMS single layer and 145nm for the DCMS single layer.
  • the method according to the invention shows a significant increase in the coating rate compared to the pure HiPIMS method in the direction of the rate of the pulsed DCMS method.
  • a reduction in the internal stress state compared to the HiPIMS process could be achieved.
  • the higher rate is essentially due to the modulation of HiPIMS individual layers with DCMS individual layers as well as the changed reactive gas flow in the HiPIMS process.
  • non-reactive process and reactive process can of course also be combined combinatorially.
  • An example would be the Cr/CrN system.
  • the Cr layers could be deposited non-reactively with HiPIMS in order to achieve a particularly high density for a corrosion protection effect, whereas the hard CrN is deposited using DCMS to enable wear protection, or vice versa, depending on the desired property profile.
  • layer architectures can be realized that contain a gradient with at least one element of the reactive gas or mixture, so that For example, starting with CrN, CrNO is initially created by adding O2 and CrO is formed as the top layer.
  • 1 shows a known coating device with a process chamber, DC power supply and gas supply
  • Fig. 2a shows a sequence of HiPIMS discharge pulses for deposition of the HiPIMS layer according to Fig. 2c;
  • FIG. 2b shows a sequence of DCMS discharge pulses for depositing the DCMS layer according to FIG. 2c;
  • FIGS. 2a and 2b shows a simple exemplary embodiment of a layer system according to the invention produced with the pulse sequences according to FIGS. 2a and 2b;
  • 3a shows a schematic of a rectangular HiPIMS or DCMS discharge pulse
  • 3b shows a schematic triangular HiPIMS or DCMS discharge pulse
  • Fig. 3c shows a schematic of a needle-shaped HiPIMS or DCMS discharge pulse
  • 3d shows a schematic of a rectangular HiPIMS or DCMS discharge pulse according to FIG. 3a with a preparation pulse
  • FIG. 3e schematically shows a triangular HiPIMS or DCMS discharge pulse according to FIG. 3b with a positive square-wave pulse
  • FIG. 3f shows schematically a bipolar pulse sequence with needle-shaped discharge pulses;
  • Fig. 4 Deposition rate as a function of magnetic field strength and pulse frequency.
  • a coating device B known per se is shown below with reference to FIG Fig. 1 comprising a DC power supply 81 and a pulse unit 82, described schematically.
  • At least the first power supply unit 7 must be designed and operable in such a way that the method according to the invention can be carried out by means of the magnetron 4, as will be explained in more detail below.
  • the second power supply unit 8 can either be identical to the first power supply unit 7, or can also be different from the power supply unit 7, depending on which specific sputtering process is to be carried out with the magnetron 400.
  • the second magnetron 400 with a second power supply unit is not required and therefore can also be missing, or operated with the same parameters as the first magnetron.
  • the first power supply unit 7 is electrically connected to the magnetron 4, comprising a magnetic field source 41 and a primary target 42 with a coating material 43.
  • the magnetic field source 41 is designed such that a magnetic field strength MFS of Magnetic field source 41 during the pulsed and / or unpulsed DCMS sputtering process can be selected differently from a magnetic field strength MFS of the magnetic field source 41 during the HiPIMS sputtering process.
  • Typical magnetic field strengths MFS are, for example, in the range from approx. 50Gauss to approx. WOOGauss.
  • magnetic field strengths MFS in the range of approximately 50Gauss to 600Gauss are advantageously selected for the HiPIMS process, while typical magnetic field strengths MFS for the DCMS process are often in the range of approximately 300Gauss to WOOGauss.
  • the magnetic field strength MFS can be varied in a manner known per se via an electromagnetic coil, which can be provided in the vicinity of the magnetron 4 and / or the primary target 42 a current through the electromagnetic coil can be changed or adjusted, so that the magnetic field strength MFS at the location or in the surroundings of the magnetron 4 or the primary target 42 can be variably adjusted to a predetermined value.
  • the first power supply unit 7 can provide a sequence consisting of a plurality of HiPIMS discharge pulses 5 of high power density with pulse duration TI in the operating state on the magnetron 4 for carrying out a HiPIMS sputtering method in a HiPIMS mode.
  • the first power supply unit 7 can alternatively also be operated in a DCMS mode in a different operating state for carrying out a pulsed and/or non-pulsed DCMS sputtering process.
  • the first power supply unit 7 is then operated in such a way that the magnetron 4 is operated with one or a plurality of DCMS discharge pulses 6 of low power density with a pulse duration T2 to form the DCMS layer.
  • An unpulsed DCMS can also be selected.
  • the second power supply unit 8 is electrically connected to the magnetron 400 comprising a magnetic field source 401 and a primary target 402 with a coating material 403. In the operating state, the second power supply unit 8 can supply the second magnetron 400 with electrical energy in order to carry out a sputtering process in a manner well known to those skilled in the art.
  • the second magnetron 400 it is possible for the second magnetron 400 to operate like the first by means of the second power supply unit 8 as described above Magnetron 4 is operated. However, it is also possible to operate the magnetron 400 according to any other sputtering method known per se, with or without the support of a magnetic field source 401.
  • the substrates 1 to be coated are advantageously, but not absolutely necessary in certain special cases, provided on a rotating substrate holder 9 in a manner known to those skilled in the art, so that a uniform coating of the substrates 1 can be ensured.
  • the rotating substrate holder 9 is here advantageous, but also fundamentally not necessary, connected to an electrical bias voltage supply 10, so that the rotating substrate holder 9 can be electrically biased to a predeterminable bias voltage.
  • the same or different sputtering gases 2, 21, 22 or predeterminable mixtures thereof can be supplied to the process chamber in a known manner.
  • the sputtering gas 21 is used in the HiPIMS sputtering process, while the sputtering gas 22 is used to carry out the DCMS sputtering process.
  • the process chamber 3 is flooded with the sputtering gas 21.
  • frequently used sputtering gases include noble gases such as argon or krypton or other known sputtering gases.
  • the process chamber can optionally be additionally supplied with the same or different process gases HPG, DCG or predeterminable mixtures thereof in a known manner.
  • the process gas HPG is used in the HiPIMS sputtering process, while the process gas DCG is used to carry out the DCMS sputtering process.
  • the process chamber 3 is flooded with the process gas HPG.
  • frequently used process gases include reactive gases such as C2H2, Ar, N2, O2 or other reactive gases known to those skilled in the art.
  • the magnetron 4 and the second magnetron 400 can comprise the same or different coating materials 43, 403.
  • the coating device B according to FIG. 1 has a high vacuum pump system, which is not shown here for reasons of clarity.
  • a radiation heater also not shown here
  • an AEGD module Arc Enhanced Glow Discharge
  • 2c of a very simple layer system S according to the invention was created using a coating device B according to FIG. 1 in a first process step in a HiPIMS sputtering process using the primary target 42 by depositing the HiPIMS layer HS from coating material 43 directly onto the substrate 1 deposited using a sequence consisting of a plurality of HiPIMS discharge pulses 5 of high power density with pulse duration TI according to FIG. 2a.
  • the DCMS layer DS was then made from the same coating material 43 using one and the same primary target 42 in a pulsed DCMS sputtering process deposited on the HiPIMS layer in a DCMS mode by means of a sequence of a plurality of DCMS discharge pulses 6 of low power density with pulse duration T2 according to FIG. 2b.
  • the HiPIMS discharge pulses 5 of the sequence according to FIG. 2a are rectangular HiPIMS discharge pulses 5 with a pulse duration TI of 5 ms each, i.e. the DCMS duty cycle DUD of the individual DCMS discharge pulses 6 was 5 ms, and the HiPIMS discharge pulses 5 were in one A distance of 150ms, i.e. at a distance of a HiPIMS death time Ti of 150ms, is applied to the primary target 42.
  • the HiPIMS duty cycle DUH of the sequence of HiPIMS discharge pulse 5 and HiPIMS death time Ti is therefore approx. 3.2%.
  • a partial sequence consisting of a HiPIMS duty cycle DUH of a single HiPIMS discharge pulse 5 and a HiPIMS death time Ti was a total of 155 ms, so that almost 400 individual HiPIMS discharge pulses 5 were used in the total coating time of 60 s, which corresponds to a pulse frequency of approx .6Hz, so that the entire duty cycle of the total coating time of around 60s also accounts for approx.
  • a circular primary target 42 with a rather small area of approximately 30cm 2 was used as the primary target 42.
  • the applied rectangular sputtering voltage of the HiPIMS discharge pulses 5 was approx. 600V and the current of approx. 30A of the individual pulses was rectangular, so that a Pulse power of 18KW was achieved with each HiPIMS discharge pulse 5, which corresponds to a pulse power of 600W/cm 2 on the primary target 42, as can be easily calculated.
  • the DCMS layer DS was then applied to the HiPIMS layer HS in a DCMS sputtering process in a DCMS mode using a sequence consisting of a plurality of DCMS discharge pulses 6 of low power density with a pulse duration T2 according to FIG. 2b the coating material 43 is deposited directly onto the HiPIMS layer HS.
  • the DCMS discharge pulses 6 of low power density of the sequence of discharge pulses 6 according to FIG. 2b are rectangular DCMS discharge pulses 6 with a pulse duration T2 of 10Ops each, i.e. the DCMS duty cycle DUD of the individual DCMS discharge pulses 6 was 100ps and the DCMS Discharge pulses 6 were applied to the primary target 42 at a distance of 10ps, i.e. at a distance of a DCMS death time T2 of 10ps.
  • the DCMS duty cycle DUD of the sequence of DCMS discharge pulse 5 and DCMS death time Ti is therefore approx. 90%.
  • the DCMS layer DS of FIG. 2c was also deposited within 60 s, as can be seen from FIG.
  • a partial sequence consisting of a duty cycle and a DCMS death time T2 was a total of 110ps, so that around 550,000 individual DCMS discharge pulses 6 were used in the total coating time of 60s, which corresponds to a pulse frequency of approx. 9kHz, so that the entire duty -Cycle of the total coating time of around 60s also accounts for approximately 90%, since the pulse duration T2 of the DCMS discharge pulses 6 and also the DCMS death time T2 were not changed during the entire coating process, which of course would be possible in principle and is also practiced in special methods according to the invention becomes.
  • a circular primary target 42 with a rather small area of approximately 30cm 2 was used as the primary target 42.
  • the applied rectangular sputtering voltage of the DCMS discharge pulses 6 was approximately 500V and the current of approximately 1.3A of the individual pulses was also rectangular, so that a pulse power of around 600W was achieved with each DCMS discharge pulse 6, which was on the primary target 42 corresponds to a pulse power of 20W/cm 2 , as can be easily calculated.
  • the primary target 42 does not necessarily have to be circular, but basically has any suitable geometry can.
  • the HiPIMS discharge pulses 5 and/or the DCMS discharge pulses 6 applied to the rectangular primary target 42 were triangular or needle-shaped discharge pulses 5, 6 with pulse durations in the range from a few ps to several 100 ms or even up to in the second range, for example if the DCMS layer DS is to be deposited in an unpulsed DCMS mode.
  • the specific pulse duration to be selected is, as the person skilled in the art knows, determined by the type of discharge pulse (HiPIMS or DCMS discharge pulse) and depends on the coating material 43, the desired layer properties, such as hardness, E-modulus. Yield strength, adhesion strength, thermal stability of the layers to be produced, etc.
  • HiPIMS discharge pulses 5 Pulse duration of the HiPIMS discharge pulse 5 e.g. 80ps, dead time Ti between two HiPIMS discharge pulses 5 e.g. 1500ps, pulse frequency 63 Hz, duty cycle approx. 5%.
  • Typical values for DCMS discharge pulses 6 are: Pulse duration of the DCMS discharge pulse 6 e.g. 1500ps, dead time T2 between two DCMS discharge pulses 6 e.g. 80ps, pulse frequency e.g. 630 Hz, duty cycle approx. 95%.
  • a layer system S according to the invention often has a plurality of sequences of the same or different HiPIMS layers, HS and DCMS layers deposited directly on top of one another DS can include and other, different types of layers, which are deposited using a different sputtering process, can also be provided between, below or above a sequence of HiPIMS and DCMS layer sequences deposited directly on one another.
  • the order of the deposited HiPIMS layers HS and DCMS layers DS can also be in the reverse order to that shown schematically in Fig. 2c, depending on the requirement or application. It is therefore entirely possible that the DCMS layer is first deposited in a sequence of different layers and then the HiPIMS layer HS is deposited on the DCMS layer DS.
  • pulse shapes i.e. rectangular, needle-shaped or triangular pulses
  • the applied voltage is usually always rectangular, but in special cases it can of course have any other suitable shape. For clarity, this situation will be briefly explained using FIGS. 3a to 3f.
  • FIGS. 3a to 3f show schematically some selected possible pulse shapes of current and voltage, which in practice have a particular significance for forming HiPIMS discharge pulses 5, but of course can also be used to form DCMS discharge pulses 6 and can be used advantageously when carrying out methods according to the invention.
  • the negative target voltage U and the target current I are plotted on the ordinate upwards, while the time is plotted on the abscissa.
  • the solid line U p schematically represents the time course of the voltage
  • the dashed line l p schematically represents the time course of the current of the HiPIMS discharge pulses 5 or the DCMS discharge pulses 6.
  • both the voltage U p and the current l p of the discharge pulse 5, 6 have a rectangular shape, which is why such pulses are referred to as rectangular discharge pulses.
  • a typical triangular pulse is shown in Fig. 3b.
  • the current l p of the discharge pulse 5, 6 increases linearly over time t in the form of a ramp, while the voltage U p has a rectangular shape.
  • Fig. 3c shows two successive needle-shaped discharge pulses 5, 6.
  • the current l p rises rapidly as a function of time t in the form of a sharp needle to a peak value and then suddenly falls back to zero with voltage.
  • the time course of the voltage U p is again rectangular.
  • 3d shows a schematic diagram of a rectangular discharge pulse according to FIG / or the reactive gases RG, RG1, RG2 can be achieved.
  • 3e shows a further special pulse shape in which a first triangular discharge pulse 5, 6 according to FIG. 3b is followed by an oppositely polarized rectangular pulse with a positive voltage.
  • Fig. 3f shows a so-called bipolar pulse sequence in which a reversed polarity needle-shaped pulse with positive voltage follows between two needle-shaped discharge pulses 5, 6 according to Fig. 3c.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de revêtement pour déposer un système de revêtement (S) sur un substrat (1), au moins une couche HiPIMS (HS) et une couche DCMS (DS) étant déposées sur le substrat (1) au moyen d'une pulvérisation magnétron. Selon le procédé, une chambre de traitement (3) qui peut être mise sous vide, contient un gaz de pulvérisation cathodique (2, 21, 22), comporte une anode et un magnétron (4) formé en tant que cathode, comprenant une source de champ magnétique (41) et une cible primaire (42) comportant un matériau de revêtement (43). Selon l'invention, une même cible primaire (42) est utilisée pour déposer, dans n'importe quel ordre et alternativement l'une après l'autre, la couche HiPIMS (HS) au moyen d'un procédé de pulvérisation cathodique HiPIMS selon un mode HiPIMS faisant appel à une séquence constituée d'une pluralité d'impulsions de décharge HiPIMS (5) de densité de puissance élevée présentant une durée d'impulsion (τ1) ayant au moins une couche atomique du matériau de revêtement (43), et la couche DCMS (DS) au moyen d'un procédé de pulvérisation cathodique DCMS pulsé et/ou non pulsé selon un mode DCMS faisant appel à une impulsion de décharge DCMS (6) de faible densité de puissance présentant une durée d'impulsion (τ2) afin de former la couche DCMS (DS) à partir du matériau de revêtement (43).
PCT/EP2023/073028 2022-08-23 2023-08-22 Procédé de revêtement pour déposer un système de revêtement sur un substrat et substrat doté d'un système de revêtement WO2024042076A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102022003082.9A DE102022003082A1 (de) 2022-08-23 2022-08-23 Beschichtungsverfahren zur Abscheidung eines Schichtsystems auf einem Substrat, sowie ein Substrat mit einem Schichtsystem
DE102022003082.9 2022-08-23

Publications (1)

Publication Number Publication Date
WO2024042076A1 true WO2024042076A1 (fr) 2024-02-29

Family

ID=87847899

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2023/073028 WO2024042076A1 (fr) 2022-08-23 2023-08-22 Procédé de revêtement pour déposer un système de revêtement sur un substrat et substrat doté d'un système de revêtement

Country Status (2)

Country Link
DE (1) DE102022003082A1 (fr)
WO (1) WO2024042076A1 (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210115553A1 (en) * 2016-09-09 2021-04-22 Ionquest Corp. Magnetically Enhanced High Density Plasma-Chemical Vapor Deposition Plasma Source For Depositing Diamond and Diamond-Like Films

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011117994A1 (de) 2011-11-09 2013-05-16 Oerlikon Trading Ag, Trübbach HIPIMS-Schichten

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210115553A1 (en) * 2016-09-09 2021-04-22 Ionquest Corp. Magnetically Enhanced High Density Plasma-Chemical Vapor Deposition Plasma Source For Depositing Diamond and Diamond-Like Films

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
BOBZIN K ET AL: "Advanced deposition of hard a-C:Me coatings by HPPMS using Ne as process gas", SURFACE AND COATINGS TECHNOLOGY, vol. 332, 20 September 2017 (2017-09-20), pages 242 - 252, XP085293328, ISSN: 0257-8972, DOI: 10.1016/J.SURFCOAT.2017.07.089 *
BRADLEY J W ET AL: "The effect of changing the magnetic field strength on HiPIMS deposition rates", JOURNAL OF PHYSICS D: APPLIED PHYSICS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 48, no. 21, 24 April 2015 (2015-04-24), pages 215202, XP020285079, ISSN: 0022-3727, [retrieved on 20150424], DOI: 10.1088/0022-3727/48/21/215202 *
J W BRADLEY ET AL., J. PHYS. D: APPL, vol. 48, 2015, pages 215202
LUO Q ET AL: "Hybrid HIPIMS and DC magnetron sputtering deposition of TiN coatings: Deposition rate, structure and tribological properties", SURFACE AND COATINGS TECHNOLOGY, vol. 236, 9 July 2013 (2013-07-09), pages 13 - 21, XP028788581, ISSN: 0257-8972, DOI: 10.1016/J.SURFCOAT.2013.07.003 *
NILS BRENNING ET AL: "HiPIMS optimization by using mixed high-power and low-power pulsing", PLASMA SOURCES SCIENCE AND TECHNOLOGY, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 30, no. 1, 29 January 2021 (2021-01-29), pages 15015, XP020363233, ISSN: 0963-0252, [retrieved on 20210129], DOI: 10.1088/1361-6595/ABD79A *
V.O. OSKIRKO ET AL., IN VACUUM, vol. 181, 2020, pages 109670

Also Published As

Publication number Publication date
DE102022003082A1 (de) 2024-02-29

Similar Documents

Publication Publication Date Title
EP0439561B1 (fr) Procede et dispositif d'enduction de substrats
EP1869690B1 (fr) Procede d'utilisation d'une source d'arc pulsee
DE10018143C5 (de) DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems
DE102008021912B4 (de) Beschichtungsverfahren und Vorrichtung zum Beschichten
EP2893053B1 (fr) Procédé de production d'une couche de borocarbure métallique sur un substrat
EP2236641B1 (fr) Procédé de traitement préalable de substrats pour le procédé de PVD
EP2653583B1 (fr) Procédé de revêtement destiné à la séparation d'un système de couche sur un substrat
EP2718481B1 (fr) Procédé d'enlèvement de couches de carbone dures
EP2010691A1 (fr) Corps à revêtement
EP0748395B1 (fr) Procede de fabrication de couches de nitrure de bore cubique
WO2009132822A2 (fr) Dispositif et procédé de prétraitement et de revêtement de corps
EP2599891A2 (fr) Procédé de depôt de couches de matériau isolant.
EP2529386A1 (fr) Dispositif de revêtement comprenant une source de puissance hipims (pulvérisation à magnétron pulsé à haute puissance)
EP2439763B1 (fr) Dispositif de magnétron et procédé de fonctionnement pulsé d'un dispositif à magnétron
DE4228499C1 (de) Verfahren und Einrichtung zur plasmagestützten Beschichtung von Substraten
WO2024042076A1 (fr) Procédé de revêtement pour déposer un système de revêtement sur un substrat et substrat doté d'un système de revêtement
DE102016116762A1 (de) Verfahren zum Abscheiden einer Schicht mittels einer Magnetronsputtereinrichtung
EP2286643B1 (fr) Dispositif et procédé de pulvérisation cathodique à flux gazeux par impulsions haute puissance
DE2624005C2 (de) Verfahren und Vorrichtung zum Aufbringen von dünnen Schichten auf ein Substrat nach dem "Ion-plating"-Verfahren.
DE102004015230B4 (de) Verfahren und Vorrichtung zum Intensivieren einer gepulsten Magnetronentladung
DE102012107163A1 (de) Verfahren zur Beschichtung eines Substrats mittels Hochenergieimpulsmagnetronsputtern
WO2002097157A2 (fr) Structure modifiee de couche de carbone sous forme de diamant amorphe (cda)
EP1473382A1 (fr) Procédé et dispositif de déposition d'une couche activée par plasma par pulvérisation magnétron
DE102009019422A1 (de) Verfahren zum Erzeugen eines Plasmas mittels eines Magnetrons
DE102007061418A1 (de) Verfahren zum Erzeugen eines Hohlkatoden-Bogenentladungsplasmas und zum Regeln der Aktivierung von Materialdampfpartikeln, die dem Hohlkatoden-Bogenentladungsplasma ausgesetzt werden

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23761803

Country of ref document: EP

Kind code of ref document: A1