WO2024041373A1

WO2024041373A1 - Gas pressure measurement device and deposition apparatus

Info

Publication number: WO2024041373A1
Application number: PCT/CN2023/111748
Authority: WO
Inventors: 荒见淳一; 黎微明
Original assignee: 江苏微导纳米科技股份有限公司
Priority date: 2022-08-26
Filing date: 2023-08-08
Publication date: 2024-02-29
Also published as: CN115389096A

Abstract

The embodiments of the present application relate to a gas pressure measurement device and a deposition apparatus. The gas pressure measurement device according to an embodiment comprises a main body, a sampling pipeline, and a first port, wherein the sampling pipeline is arranged in the main body and is configured to collect gas in a reaction region to be subjected to measurement; and the first port is arranged in the sampling pipeline and is configured to be connected to a first sensor, so as to measure the pressure of the gas. The gas pressure measurement device provided in the embodiment of the present application can not only measure the pressure of the gas in the reaction region in the deposition apparatus, but can also prevent the product quality of a processing object in the reaction region from being affected.

Description

Gas pressure detection device and deposition equipment

Technical field

Embodiments of the present application relate to the field of semiconductor manufacturing, and more specifically, to gas pressure detection devices and semiconductor-related deposition equipment.

Background technique

In the semiconductor field, thin film deposition is a very important process step in the semiconductor manufacturing process. Thin film deposition is the coating of a film on a semiconductor material. This film can include various types of materials required, such as silicon dioxide, polysilicon, copper, etc. Semiconductor equipment is the basis of the semiconductor production process. The advanced level of semiconductor equipment directly determines the quality and efficiency of semiconductor production. Thin film deposition equipment in semiconductor equipment is one of the three core equipment in the semiconductor manufacturing process. Its manufacturing technology is difficult and the threshold is extremely high. Deposition equipment may include, for example, atomic layer deposition equipment, plasma-enhanced atomic layer deposition equipment, and plasma-enhanced chemical vapor deposition equipment. The growth of the required thin film layer is achieved by deposition through these equipment. During the film growth process, the relevant processes need to be precisely controlled. Parameters, among many process parameters, air pressure is one of the commonly used process parameters.

The Atomic Layer Deposition (ALD) process is a process in which gas phase reactants are introduced alternately into the cavity, and through alternating surface saturation reactions, self-limiting thin film deposition and growth is performed. Atomic layer deposition has the advantages of high bonding strength, good film uniformity, and good composition uniformity. It has been widely used in many fields such as microelectronic systems, memory dielectric layers, and optical films.

The Plasma Enhanced Atomic Layer Deposition (PEALD) process expands the selection range of precursor sources for ordinary atomic layer deposition systems, increases the film deposition rate, and reduces the deposition temperature, so it is widely used to control temperature Deposition of thin films on sensitive materials and flexible substrates. The PEALD process is a good complement to the ALD process.

The Plasma Enhanced Chemical Vapor Deposition (PECVD) process uses glow discharge plasma to chemically react gaseous substances containing thin films to achieve the growth of thin film materials.

However, since ALD, PEALD and PECVD processes all require the introduction of gas into reaction equipment, the gas pressure of the reaction equipment needs to be detected to correctly control the reaction process.

Therefore, the industry needs a device that can detect the gas pressure within the reaction equipment.

Contents of the invention

One purpose of the embodiments of the present application is to provide a gas pressure detection device and deposition equipment, which can not only detect the gas pressure in the reaction equipment, but also avoid affecting the product quality of the process objects in the reaction equipment in the deposition equipment. Moreover, by separately setting the pressure detection device, the relevant detection components are separated from the main body of the chamber, which facilitates the replacement of the pressure detection device. Maintenance or repair can be completed quickly through the replacement of spare parts.

A gas pressure detection device provided according to an embodiment of the present application includes: a main body; a sampling pipeline provided in the main body and configured to collect gas in a reaction area to be detected; and a first A port is provided in the sampling pipeline, and the first port is configured to be connected with a first sensor to measure the pressure of the gas.

In some embodiments of the present application, the body is configured to be removably connected to the device in which the reaction area to be detected is located.

In some embodiments of the present application, the gas pressure detection device further includes a second port provided in the sampling pipeline and a purge mechanism configured to be connected to the second port, wherein the second port is provided at the end of the sampling pipeline.

In some embodiments of the present application, the purge mechanism includes a purge element configured to provide purge gas.

In some embodiments of the present application, the purge mechanism further includes a valve element configured to control the flow of purge gas.

In some embodiments of the present application, the purge gas is an inert gas.

In some embodiments of the present application, the purge gas has a Peclet number of at least one.

In some embodiments of the present application, the Peclet number of the purge gas ranges from 1 to 2.

In some embodiments of the present application, the main body has an opening, a third port of the sampling pipeline is disposed in the opening, and the gas in the reaction area to be detected enters the sampling pipeline through the third port.

In some embodiments of the present application, the gas pressure detection device further includes a first portion configured to be sealingly connected to the body, and the first portion is in communication with the third port of the sampling line.

In some embodiments of the present application, the material of the first part is sapphire.

In some embodiments of the present application, the first portion is configured to be disposed within the device in which the reaction region to be detected is located, and the first portion includes an end configured to be disposed within the reaction region to be detected.

In some embodiments of the present application, the gas pressure detection device further includes a fourth port disposed in the sampling pipeline and a second sensor configured to be connected to the fourth port.

In some embodiments of the present application, the second sensor is configured to measure the pressure of the gas, and the second sensor has different measurement accuracy and/or range than the first sensor.

In some embodiments of the present application, the gas pressure detection device further includes a fifth port disposed on the sampling pipeline and a safety component configured to be connected to the fifth port.

In some embodiments of the present application, the safety member is configured to sense pressure changes of the gas inside the sampling line.

In some embodiments of the present application, the safety component is configured to shut down the gas pressure detection device and the equipment in which the reaction area to be detected is located when it is sensed that the pressure change of the gas inside the sampling pipeline exceeds a predetermined value.

In some embodiments of the present application, the gas pressure detection device further includes a maintenance port provided in the sampling pipeline.

In some embodiments of the present application, the sampling pipeline has a first section and a second section perpendicular to the first section, and the connection part between the first section and the second section is arc-shaped.

In some embodiments of the present application, the purge mechanism is configured to purge the sampling line during periods when no process is occurring within the reaction area to be detected.

According to another embodiment of the present application, a deposition equipment is provided, which includes: a reaction device configured to accommodate a semiconductor element to be deposited; and a gas pressure detection device disposed outside the reaction device, the gas pressure detection device It includes: a main body; a sampling pipeline disposed in the main body and configured to collect gas in the reaction device; and a first port disposed in the sampling pipeline, the first port being configured to connect with the first sensor to measure gas pressure.

In some embodiments of the present application, the deposition device further includes a first portion configured to be disposed within the reaction device, the first portion being configured to sealingly connect to the body and to communicate with the sampling line.

In some embodiments of the present application, the gas pressure detection device is configured to be detachably connected to the reaction device.

In some embodiments of the present application, the deposition device further includes a second port disposed in the sampling pipeline and a purge mechanism configured to be connected to the second port, wherein the second port is disposed at the end of the sampling pipeline.

One of the purposes of the embodiments of the present application is to provide a gas pressure detection device and deposition equipment that can accurately measure the gas pressure in the reaction area, thereby enabling the operator to correctly control the reaction process and avoid causing damage to the reaction area. The product quality of the process objects will be adversely affected. In addition, the gas pressure detection device provided by the embodiment of the present application also has the advantage of easy replacement and maintenance. Therefore, the gas pressure detection device and deposition equipment provided by the embodiments of the present application fully meet the needs of the industry.

Description of drawings

In the following, drawings necessary to describe the embodiments of the present application or the prior art will be briefly described to facilitate the description of the embodiments of the present application. Obviously, the drawings in the following description are only some of the embodiments in this application. For those skilled in the art, drawings of other embodiments can still be obtained based on the structures illustrated in these drawings without requiring creative efforts.

Figure 1 is a schematic cross-sectional view of a deposition equipment according to an embodiment of the present application, which includes a gas pressure detection device.

FIG. 2 is a perspective view of the gas pressure detection device shown in FIG. 1 .

3 is a schematic cross-sectional view of a deposition equipment according to another embodiment of the present application, which includes a gas pressure detection device according to another embodiment of the present application.

Detailed ways

Embodiments of the present application will be described in detail below. Throughout this specification, identical or similar components and components having the same or similar functions are designated by similar reference numerals. The embodiments described herein with respect to the accompanying drawings are illustrative and diagrammatic in nature and are intended to provide a basic understanding of the present application. The embodiments of the present application should not be construed as limitations of the present application.

As used herein, the terms "about,""substantially," and "substantially" are used to describe and illustrate small variations. When used in connection with an event or situation, the term may refer to instances in which the event or situation occurs precisely as well as instances in which the event or situation occurs closely. For example, when used in conjunction with a numerical value, a term may refer to a range of less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±0.5%, or less than or equal to ±0.05%. For example, two numerical values are considered to be "substantially" the same if the difference between them is less than or equal to ±10% of the mean value of the values.

Furthermore, for ease of description, "first," "second," "third," etc. may be used herein to distinguish different components of a figure or a series of figures. "First", "second", "third", etc. are not intended to describe corresponding components.

In this application, unless otherwise specified or limited, the terms "arranged", "connected", "coupled", "fixed" and similar terms are used broadly, and those skilled in the art may refer to specific In order to understand the above terms, it can be, for example, fixed connection, detachable connection or integrated connection; it can also be a mechanical connection or an electrical connection; it can also be a direct connection or an indirect connection through an intermediary structure; it can also be two Internal communication of components. Moreover, the drawings of the present disclosure are only schematic diagrams, which do not represent the correct proportions of the structures of the embodiments of the present application.

FIG. 1 is a schematic cross-sectional view of a deposition equipment 10 according to an embodiment of the present application, which includes a gas pressure detection device 20 . FIG. 2 is a perspective view of the gas pressure detection device 20 shown in FIG. 1 .

As shown in FIGS. 1 and 2 , the deposition equipment 10 according to an embodiment of the present application may include: a gas pressure detection device 20 and a reaction device 30 . The deposition equipment 10 can perform deposition processes such as ALD, PEALD, and PECVD.

The reaction device 30 may include a cavity 101, a bearing member 103, a spray member 105 and a reaction area 107. The reaction device 30 may be, for example, but not limited to, an ALD deposition device, a PEALD deposition device, or a PECVD deposition device. Reaction device 30 may be configured to accommodate semiconductor elements to be deposited and to perform thin film deposition on the semiconductor elements.

The cavity 101 may have an air inlet 101a to receive gas. The gas may be a process gas (such as, but not limited to, a plasma gas) or a non-process gas. In some embodiments of the present application, the air inlet 101a may be disposed at any suitable location of the deposition device 10, such as, but not limited to, any one or more of the top, side and/or bottom surfaces of the deposition device 10. . The material of the cavity 101 may be, for example, but not limited to, ceramic.

The carrying member 103 may be configured to carry the semiconductor wafer 103a to be deposited. The material of the load-bearing member 103 may be a material commonly used in the art, such as, but not limited to, ceramics.

The spray member 105 may be disposed above the reaction area 107 . A plurality of spray holes may be formed on the spray member 105 . The spray member 105 may spray the gas received from the air inlet 101a to the reaction area 107.

Reaction region 107 may include semiconductor wafer 103a. Semiconductor wafer 103a is deposited within reaction region 107.

The gas pressure detection device 20 can be disposed outside the reaction device 30 . The gas pressure detection device 20 can be generally disposed on the side of the reaction device 30 . The gas pressure detection device 20 may include: a main body 20a, a sampling pipeline 201, a first sensor 203, a second sensor 205, a safety member 207, a third sensor 209, a purge mechanism 211, a first port 213a, a second port 213b, The third port 213c, the fourth port 213d, the fifth port 213e and the maintenance port 213f.

The body 20a may be configured to be removably connected to the reaction device 30 in which the reaction region 107 to be detected is located. The main body 20a can be detachably connected to the reaction device 30 by screws 200a. Screws 200a may be arranged around sampling line 201. The body 20a may be removably connected to the reaction device 30 in any suitable manner. The main body 20a can be abutted to the reaction device 30 in any suitable manner. The body 20a may have an opening 200b. Opening 200b can accommodate sampling line 201. The third port 213c of the sampling pipe 201 is disposed in the opening 200b. Detachably connecting the main body 20a of the gas pressure detection device 20 to the reaction device 30 facilitates the replacement of the gas pressure detection device 20 and facilitates the rapid completion of maintenance or repair of the gas pressure detection device 20 . In addition, disposing the main body 20a of the gas pressure detection device 20 outside the reaction device 30 is conducive to optimizing the shape of the gas pressure detection device 20, so that the main body 20a can be flexibly designed according to actual conditions.

Sampling line 201 may be disposed within body 20a and configured to collect gas within reaction region 107 to be detected. The sampling line 201 may have a first section 201a and a second section 201b perpendicular to the first section 201a. The connecting portion 201c of the first section 201a and the second section 201b may be arc-shaped. The connecting part 201c adopts a smooth transition method to allow stable air flow. In other embodiments of the present application, the first section 201a may form any suitable angle with the second section 201b. The connecting portion 201c may have any suitable shape. The material of the sampling line 201 is any suitable material in the art. The sampling pipe 201 may have a second port 213b provided at the tail of the sampling pipe 201 and a third port 213c provided at the opening 200b of the main body 20a. Second port 213b may be configured to connect to purge mechanism 211. Gas may enter sampling line 201 via third port 213c. The third port 213c may be located generally at one end of the sampling line 201. The tail may be generally located at the other end of the sampling line 201 . The tail may be located outside the main body 20a. The gas purged from the second port 213b provided at the tail can substantially purge the entire sampling pipeline, so that undesired particles appearing in the entire sampling pipeline can be removed. The sampling line 201 may also have a first port 213a located between the second port 213b and the third port 213c. The first port 213a may be configured to connect with the first sensor 203 to measure the pressure of the gas. The sampling line 201 may also have a second The fourth port 213d between the port 213b and the third port 213c. The fourth port 213d may be configured to connect with the second sensor 205 to measure the pressure of the gas. The sampling line 201 may also have a fifth port 213e located between the second port 213b and the third port 213c. Fifth port 213e may be configured to connect to security member 207. The sampling line 201 may also have a maintenance port 213f located between the second port 213b and the third port 213c. The maintenance port 213f is a reserved interface or alternative interface that can be connected to any type of component, for example, but not limited to, it can be connected to a sensor for gas sampling, a component used to verify whether the sensor is operating normally. Maintenance port 213f is sealed when not in use. The positions of the first port 213a, the second port 213b, the third port 213c, the fourth port 213d, the fifth port 213e and the maintenance port 213f can be set according to actual needs. In other embodiments of the present application, the sampling line 201 may include at least one port. The number of ports can be set according to the actual space and shape of the device and the actual test requirements, and the positions of the ports can be reasonably arranged to set appropriate positions for the components connected to the corresponding ports to achieve a reasonable spatial layout. You can choose whether to use these ports as needed. The port can be sealed when it is not required to connect a test component.

The first sensor 203 may be configured to be connected to the first port 213a of the sampling line 201 to measure the pressure of the collected gas. The first sensor 203 may have a first measurement accuracy and a first measurement range. The first sensor 203 may be any suitable gas pressure sensor. The position of the first sensor 203 can be reasonably arranged according to actual needs to optimize the spatial arrangement.

The second sensor 205 may be configured to be connected to the fourth port 213d of the sampling line 201 to measure the pressure of the collected gas. The second sensor 205 may have a different measurement accuracy and/or range than the first sensor 203 . The second sensor 205 may have a second measurement accuracy and a second range. The first measurement accuracy may be greater than the second measurement accuracy. The first measurement accuracy may be less than the second measurement accuracy. The first measurement accuracy may be equal to the second measurement accuracy. The first measurement range may be larger than the second measurement range. The first measurement range may be smaller than the second measurement range. The first measurement range may be equal to the second measurement range. By arranging sensors with different measurement accuracy and/or ranges, more accurate measurement of the gas pressure in the reaction area 107 can be achieved. The second sensor 205 may be any suitable gas pressure sensor. The position of the second sensor 205 can be reasonably arranged according to actual needs to optimize the spatial arrangement.

Safety member 207 may be configured to connect to fifth port 213e of sampling line 201. The safety member 207 may be configured to sense pressure changes of the gas inside the sampling line 201 . The safety member 207 may be configured to close all other safety components (such as, but not limited to, a sudden vacuum break) when sensing a change in pressure of the gas inside the sampling line 201 exceeding a predetermined value (such as, but not limited to, a sudden vacuum break). All components that affect safety (other than components used for gas or power supply), including, for example, but not limited to, gas pressure detection device 20 and reaction device 30 to protect all components including the gas pressure detection device 20 and reaction device 30. Safety member 207 may be any suitable type of switching element. The positions of the safety components 207 can be reasonably arranged according to actual needs to optimize space arrangement.

The third sensor 209 may be configured to connect to the maintenance port 213f of the sampling line 201. The third sensor 209 may be different from the first sensor 203 and the second sensor 205 to measure the gas collected by the sampling pipeline 201 or other characteristics of the sampling pipeline 201 . The position of the third sensor 209 can be reasonably arranged according to actual needs to optimize the space arrangement.

The arrangement of the first sensor 203, the second sensor 205, the safety member 207 and the third sensor 209 is not limited to the arrangement shown in the drawings of the present disclosure. Sensors or other types of components connected to each port can be reasonably arranged according to actual needs to achieve a reasonable layout, reduce component interference, and optimize space utilization.

Purge mechanism 211 may be configured to connect to second port 213b of sampling line 201. The purge mechanism 211 may be configured to purge the entire sampling line 201 during periods when no process is being performed in the reaction area 107 to be detected, so that undesirable particles in the sampling line 201 are removed, thereby avoiding damage to the reaction area. Processing objects within 107 are affected. The purge mechanism 211 may include a purge element 2111 and a valve element 2113.

Purge element 2111 may be configured to provide purge gas. Purge element 2111 may be any suitable type of pump. The purge gas may be an inert gas, such as, but not limited to, nitrogen, argon, etc.

Valve element 2113 may be configured to control the flow of purge gas. Valve element 2113 may be any suitable valve. The flow rate (unit: m/s) and flow rate (unit: m ³ /s) of the purge gas can be set according to specific needs. The Peclet number of the purge gas is at least 1 to prevent the gas provided by the purge element 2111 from back-diffusion toward the purge element 2111. The Peclet number of the purge gas ranges from about 1 to 2. The Peclet number of the purge gas ranges from about 3 to 4. The Peclet number of the purge gas ranges from about 5 to 8. The Peclet number of the purge gas ranges from about 8 to 10. The Peclet number is a well-known dimensionless number in the field of fluid mechanics. The gas flow rate may be the flow rate of the gas blown out from the purge element 2111 in the sampling pipeline 201, and its unit is m/s; the distance may be the physical distance between the second port 213b and the third port 213c, that is, The length of the sampling pipeline 201 is measured in m; and the gas diffusion constant is the ratio of thermal conductivity λ to the product of specific heat capacity c and density ρ, which is well known in the art, and its unit is m ² /s.

The gas pressure detection device 20 may further include a first portion 202 . The first portion 202 may be provided separately from the body 20a. The first portion 202 may be configured to sealingly connect to the body 20a and to the sampling line. The third port 213c of 201 is connected. The first portion 202 can be assembled and sealed with the main body 20a. The first portion 202 may be sealingly connected to the body 20a via a sealing structure 204. The material of the sealing structure 204 is a commonly used sealing material. The material of the first part can be sapphire to avoid affecting the radio frequency in the reaction device 30 . The first portion 202 may be configured to be disposed within the device, ie, the reaction device 30, in which the reaction region 107 to be detected is located. The first portion 202 may be disposed within the inner wall of the chamber of the reaction device 30 . The first portion 202 includes an end portion 202a. The end portion 202a can be disposed in the reaction region 107 to be detected to directly sample the process pressure in the reaction region 107 .

When the reaction device 30 performs a process, the gas pressure detection device 20 is configured to measure the gas within the reaction device 30 . The purge element 2111 of the gas pressure detection device 20 is closed. The gas in the reaction area 107 can enter the first part 202 through the end 202a, and then enter the sampling pipeline 201 through the third port 213c. The first sensor 203, the second sensor 205 and the third sensor 209 provided on the sampling pipeline 201 can measure the pressure of the collected gas. Furthermore, the safety member 207 can be opened to sense the pressure change of the gas inside the sampling pipeline 201 to protect the gas pressure detection device 20 . The end 202a of the first part 202 is close to the process object in the reaction zone 107, so an accurate measurement of the gas pressure in the reaction zone 107 can be obtained. Therefore, the deposition equipment 10 provided by the embodiment of the present application has the advantage of good detection of the gas pressure in the reaction area 107, thereby allowing the operator to more accurately control the process in the deposition equipment 10, thereby improving production efficiency and product quality. Moreover, the gas pressure detection device 20 and the reaction device 30 provided in the embodiment of the present application are provided separately, which can ensure flexible and convenient disassembly and maintenance of the gas pressure detection device 20 . In addition, the sampling pipeline 201 in the gas pressure detection device 20 is connected with the first part 202 in the reaction device 30, which can ensure the accurate measurement of the gas pressure in the reaction area 107 while ensuring the gas pressure detection device to the greatest extent. 20Flexible and convenient disassembly and maintenance, and space optimization.

Condensation occurs easily when the gas in the reaction zone 107 encounters the end 202a, thereby producing undesirable liquid particles. Moreover, various different gases injected into the reaction area 107 are prone to chemical reactions after entering the first part 202 and the sampling pipe 201 , thus causing undesired particles to appear in the first part 202 and the sampling pipe 201 . Such undesired particles may affect the measurement results of the gas pressure detection device 20 . In addition, since the end 202a of the first part 202 is close to the process object, if undesired particles are present in the first part 202, the particles may occur close to the process object, and the product quality of the process object may be affected. The gas pressure detection device 20 provided in the embodiment of the present application uses the purge element 2111 to purge the sampling pipeline 201 and the first part 202 when the deposition equipment 10 is not performing a reaction process. Undesired particles in the sampling pipeline 201 and the first part 202 are removed to prevent the introduction of the gas pressure detection device 20 from affecting the quality of the process object, and at the same time, the measurement accuracy of the gas pressure detection device 20 is improved.

Figure 3 is a schematic cross-sectional view of a deposition equipment 10' according to another embodiment of the present application, which includes a gas pressure detection device 20' according to another embodiment of the present application.

The only difference between the deposition equipment 10' shown in FIG. 3 and the deposition equipment 10 shown in FIG. 1 is that the gas pressure detection device 20' is different from the gas pressure detection device 20 shown in FIGS. 1 and 2.

The difference between the gas pressure detection device 20' shown in Figure 3 and the gas pressure detection device 20 shown in Figures 1 and 2 is that the gas pressure detection device 20' does not include a purge element 2111, and it is located near the end 202a A valve 213 is provided nearby. When the deposition equipment 10' performs a reaction process, the gas pressure detection device 20' collects the gas in the reaction area 107, and the valve 213 is opened to absorb undesired particles in the sampling pipe 201 and the first part 202, thereby preventing them from affecting the semiconductor wafer. 103a. When the deposition equipment 10' is not performing a reaction process, the gas pressure detection device 20' does not collect the gas in the reaction area 107, and the valve 213 is closed. The absorbed particles are stored in the closed valve 213 . Compared with the gas pressure detection device 20 provided in FIGS. 1 and 2 , the gas pressure detection device 20 ′ may cause the problem of particle aggregation.

The technical content and technical features of the present application have been disclosed as above. However, those skilled in the art may still make various substitutions and modifications based on the teachings and disclosures of the present application without departing from the spirit of the present application. Therefore, the protection scope of the present application should not be limited to the content disclosed in the embodiments, but should include various substitutions and modifications that do not deviate from the present application, and should be covered by the claims of the present application.

Claims

A gas pressure detection device, which includes:

main body;

a sampling line disposed within the body and configured to collect gas within the reaction area to be detected; and

A first port is provided in the sampling pipeline, and the first port is configured to be connected with a first sensor to measure the pressure of the gas.
The gas pressure detection device of claim 1, wherein the body is configured to be removably connected to a device in which the reaction area to be detected is located.
The gas pressure detection device according to claim 1, further comprising a second port provided in the sampling pipeline and a purge mechanism configured to be connected to the second port, wherein the second port is provided in the end of the sampling line.
The gas pressure detection device of claim 3, wherein the purge mechanism includes a purge element configured to provide purge gas.
The gas pressure detection device of claim 4, wherein the purge mechanism further includes a valve element configured to control the flow of the purge gas.
The gas pressure detection device according to claim 4, wherein the purge gas is an inert gas.
The gas pressure detection device according to claim 4, wherein the Peclet number of the purge gas is at least one.
The gas pressure detection device according to claim 4, wherein the Peclet number of the purge gas ranges from 1 to 2.
The gas pressure detection device according to claim 1, wherein the main body has an opening, the third port of the sampling pipeline is disposed in the opening, and the gas in the reaction area to be detected passes through the The third port enters the sampling pipeline.
The gas pressure detection device of claim 9, further comprising a first portion configured to sealingly connect to the body, and the first portion is in communication with the third port of the sampling line.
The gas pressure detection device according to claim 10, wherein the material of the first part is sapphire.
The gas pressure detection device according to claim 10, wherein the first part is configured to be disposed in the equipment where the reaction area to be detected is located, and the first part includes a gas pressure detection device configured to be disposed in the reaction area to be detected. detect the end of the reaction area.
The gas pressure detection device of claim 1, further comprising a fourth port disposed on the sampling line and a second sensor configured to be connected to the fourth port.
The gas pressure detection device according to claim 13, wherein the second sensor is configured to measure the pressure of the gas, and the second sensor and the first sensor have different measurement accuracy and/or range.
The gas pressure detection device of claim 1, further comprising a fifth port disposed on the sampling line and a safety member configured to be connected to the fifth port.
The gas pressure detection device of claim 15, wherein the safety member is configured to sense pressure changes of gas inside the sampling line.
The gas pressure detection device according to claim 15, wherein the safety member is configured to close the gas pressure detection device and the gas pressure detection device when sensing a pressure change of the gas inside the sampling pipeline exceeding a predetermined value. The device where the reaction area to be detected is located.
The gas pressure detection device according to claim 1, further comprising a maintenance port provided in the sampling pipeline.
The gas pressure detection device according to claim 1, wherein the sampling pipeline has a first section and a second section perpendicular to the first section, and the first section is connected to the second section. The connecting parts of the segments are arc-shaped.
The gas pressure detection device of claim 3, wherein the purge mechanism is configured to purge the sampling line during periods when no process is occurring in the reaction area to be detected.
A deposition device comprising:

a reaction device configured to contain a semiconductor component to be deposited; and

A gas pressure detection device is provided outside the reaction device. The gas pressure detection device includes:

main body;

a sampling line disposed within the body and configured to collect gas within the reaction device; and

A first port is provided in the sampling pipeline, and the first port is configured to be connected with a first sensor to measure the pressure of the gas.
The deposition apparatus of claim 21 , further comprising a first portion configured to be disposed within the reaction apparatus, the first portion being configured to sealingly connect to the body and to communicate with the sampling line.
The deposition apparatus of claim 21 , wherein the gas pressure detection device is configured to be removably connected to the reaction device.
The deposition apparatus of claim 21 , further comprising a second port disposed on the sampling line and a purge mechanism configured to connect to the second port, wherein the second port is disposed on the The end of the sampling line.