CN220417649U - Fluid heating structure and semiconductor fluid processing system - Google Patents

Abstract

The application discloses a fluid heating structure and semiconductor fluid processing system relates to the technical field of semiconductors. The fluid heating structure comprises a side wall, a detection tube body, a heating component and a temperature measuring component. Wherein the side walls define a cavity for containing a fluid; one end of the detection tube body is connected to the side wall and communicated with the cavity, and the other end of the detection tube body forms an opening; the heating component is attached to the outer surface of the side wall and is used for heating the fluid in the cavity; the temperature measuring assembly is in sealing connection with one end, far away from the side wall, of the detection tube body, the temperature measuring assembly comprises a probe used for acquiring temperature information, and the probe is inserted into a tube cavity of the detection tube body. The probe in the fluid heating structure can be in direct contact with the semiconductor material and detect the temperature, so that the temperature of the fluid in the cavity can be detected more accurately. The semiconductor fluid processing system comprises the fluid heating structure, and can accurately detect and control the temperature of semiconductor fluid in the cavity.

Description

Fluid heating structure and semiconductor fluid processing system

Technical Field

The present application relates to the field of semiconductors, and more particularly, to a fluid heating structure and a semiconductor fluid processing system.

Background

In the semiconductor field, some semiconductor materials need to be transported or stored in fluid form, typically by heating the semiconductor material to avoid condensation or crystallization. During transportation or storage of semiconductor materials, the temperature of the semiconductor materials needs to be strictly controlled, so that the temperature of the semiconductor materials is collected, and the temperature is regulated according to the collected temperature information. The existing collection mode of the semiconductor material temperature is that a thermocouple is attached to the outer side of the side wall of the chamber containing the semiconductor material, and the temperature of the side wall is directly collected. The temperature acquisition mode has the problem of inaccurate detection due to the difference between the temperature of the side wall and the temperature of the internal semiconductor material.

Disclosure of Invention

It is an object of the present application to provide a fluid heating structure and a semiconductor fluid handling system that is capable of accurately detecting the temperature of semiconductor material in a cavity of the fluid heating structure.

Embodiments of the present application are implemented as follows:

in a first aspect, the present application provides a fluid heating structure comprising:

a sidewall defining a cavity for containing a fluid;

the detection tube body is connected with the side wall at one end and is communicated with the cavity, and an opening is formed at the other end of the detection tube body;

the heating component is attached to the outer surface of the side wall and used for heating the fluid in the cavity;

the temperature measuring assembly is in sealing connection with one end of the detection tube body, which is far away from the side wall, and comprises a probe for acquiring temperature information, and the probe is inserted into the lumen of the detection tube body.

In an alternative embodiment, the heating assembly is a heating belt that wraps around the side wall.

In an alternative embodiment, the heating band is further wrapped around the outer surface of the probe body.

In an alternative embodiment, the heating assembly is threadably connected to the probe tube.

In an alternative embodiment, the probe body is threadably connected to the sidewall.

In an alternative embodiment, the probe tube body is a face seal joint, and a metal seal gasket is arranged between the face seal joint and the side wall.

In an alternative embodiment, the fluid heating structure further comprises a controller, and the heating assembly and the temperature measuring assembly are both electrically connected to the controller.

In an alternative embodiment, the side walls enclose a pipeline, which is connected perpendicularly to the probe body.

In an alternative embodiment, the side wall encloses a tank, and the probe extends into the tank through the probe tube.

In a second aspect, the present application provides a semiconductor fluid treatment system comprising a fluid heating structure as described in any one of the preceding embodiments.

The beneficial effects of the embodiment of the application are that:

the fluid heating structure provided by the application comprises a side wall, a detection tube body, a heating component and a temperature measuring component. Wherein the side walls define a cavity for containing a fluid; one end of the detection tube body is connected to the side wall and communicated with the cavity, and the other end of the detection tube body forms an opening; the heating component is attached to the outer surface of the side wall and is used for heating the fluid in the cavity; the temperature measuring assembly is in sealing connection with one end, far away from the side wall, of the detection tube body, the temperature measuring assembly comprises a probe used for acquiring temperature information, and the probe is inserted into a tube cavity of the detection tube body. In the fluid heating structure, as the cavity surrounded by the tube cavity and the side wall of the detection tube body is communicated, the probe of the temperature measuring assembly stretches into the detection tube body, so that the probe can be in direct contact with the semiconductor material and detect the temperature. Compared with the probe arranged on the outer side of the side wall, the fluid heating structure provided by the embodiment of the application can detect the temperature of the fluid in the cavity more accurately, and is further more beneficial to accurately controlling the heating assembly to regulate the temperature of the fluid in the cavity.

The semiconductor fluid processing system provided by the embodiment of the application comprises the fluid heating structure, and can accurately detect and control the temperature of semiconductor fluid in the cavity.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic illustration of a fluid heating structure in one embodiment of the present application;

FIG. 2 is a schematic view of a fluid heating structure according to another embodiment of the present application.

010-fluid heating structure; 100-side walls; 110-a cavity; 200-heating assembly; 300-detecting the tube body; 400-temperature measuring assembly; 410-a probe; 500-controllers.

Detailed Description

For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.

In the description of the present application, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships that are conventionally put in use of the inventive product, are merely for convenience of description of the present application and simplification of description, and do not indicate or imply that the apparatus or element to be referred to must have a specific direction, be configured and operated in a specific direction, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.

Furthermore, the terms "horizontal," "vertical," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.

During the production of semiconductor devices, semiconductor materials may be required to be stored or transported in a fluid state. Such as chemical vapor deposition processes commonly used in semiconductor processes, which are methods of synthesizing a coating or nanomaterial by reacting a chemical gas or vapor at a substrate surface, generally, the principle is to introduce a process gas into a reaction chamber carrying a substrate, and then deposit the process gas on the substrate surface by heating, thereby growing a thin film on the substrate surface. Some process materials are solid at ambient temperature and need to be heated to a fluid state (e.g., gaseous) before entering the reaction chamber. In the case of vapor deposition processes, the process gas vaporized into a gas is transported a long distance before entering the process chamber, and if the process gas loses heat too quickly during transport, it condenses on the sidewalls. If the deposition is blown into the reaction chamber by the gas, the deposition quality, i.e., the quality of the semiconductor product, is seriously affected. The temperature of the semiconductor fluid during transport (or storage) therefore requires strict monitoring and control. In the related art, the temperature detection method of the semiconductor material is as follows: the thermocouple is attached to the outer side of the side wall of the cavity along with the heating component. The thermocouple cannot directly contact the fluid material, and only can indirectly measure the temperature of the side wall, so that the temperature of the material cannot be accurately acquired by the detection mode. Moreover, as the thermocouple is closer to the heating assembly, the thermocouple and the heating assembly are also susceptible to interaction: firstly, temperature information collected by a thermocouple is influenced by the temperature of a heating component; secondly, because the thermocouple is arranged outside the side wall, the heating assembly can be interfered, and the arrangement is bad, for example, the side wall is difficult to cling to.

In order to improve at least one of the above-mentioned shortcomings in the prior art, the embodiment of the present application provides a fluid heating structure, which makes the temperature detection more accurate by extending the probe of the temperature measuring component into the cavity to be in direct contact with the fluid, and is also beneficial to controlling the temperature of the fluid by the heating component.

Fig. 1 is a schematic diagram of a fluid heating structure 010 in an embodiment of the present application. As shown in fig. 1, the fluid heating structure 010 of the embodiment of the present application includes a sidewall 100, a probe tube 300, a heating assembly 200, and a temperature measuring assembly 400. Wherein the side wall 100 encloses a cavity 110 for containing a fluid; one end of the detection tube body 300 is connected to the side wall 100 and is communicated with the cavity 110, and the other end of the detection tube body 300 forms an opening; the heating component 200 is attached to the outer surface of the side wall 100 and is used for heating the fluid in the cavity 110; the temperature measuring assembly 400 is connected with one end of the detecting tube body 300 far away from the side wall 100 in a sealing way, the temperature measuring assembly 400 comprises a probe 410 for acquiring temperature information, and the probe 410 is inserted into the tube cavity of the detecting tube body 300.

In the fluid heating structure 010 of the embodiment of the present application, since the lumen of the probe tube 300 is communicated with the cavity 110 surrounded by the sidewall 100, and the probe 410 of the temperature measuring assembly 400 extends into the probe tube 300, the probe 410 can directly contact with the fluid material and detect the temperature. Compared with the probe 410 being disposed outside the side wall 100, the fluid heating structure 010 provided in the embodiment of the present application can more accurately detect the temperature of the fluid in the cavity 110, and further is more beneficial to accurately controlling the heating assembly 200 to regulate the temperature of the internal fluid.

In this embodiment, the sidewall 100 encloses a conduit for transporting a fluid substance. Thus, the fluid heating structure 010 of the present embodiment can be applied to a semiconductor fluid delivery system, such as for transporting process gases used in semiconductor device manufacturing processes. In this embodiment, the pipeline is connected vertically to the probe body 300.

The heat is gradually dissipated in the process of conveying the fluid along the pipeline, so in the embodiment of the application, the heating assembly 200 is wrapped outside the pipeline, so that the fluid can be timely supplemented with heat in the conveying process, the fluid is maintained at a reasonable temperature, and condensation is avoided. In this embodiment, the heating assembly 200 is a heating belt wrapped outside the sidewall 100, and the heating belt can be well attached to the pipeline, so that the heating is more efficient and uniform. The heating belt can comprise a resistance wire, and the heat input by the heating belt to the pipeline is controlled by controlling the heating power of the resistance wire. Further, the resistance wire can be wound on the outer side of the pipeline, and the winding density of the resistance wire can be arranged according to the heat demand of different sections of the pipeline.

In alternative other embodiments, the heating assembly 200 may have other forms, such as where the heating assembly 200 includes an electrically heated ceramic sheet.

Because the probe tube 300 is disposed on the sidewall 100 to allow the probe 410 of the temperature measuring assembly 400 to extend, there may be a problem of insufficient heat supply compared to other locations where the pipe is wrapped by the heating assembly 200. In order to improve the heat loss or the uneven thermal field caused by the arrangement of the temperature measuring component 400, in the present embodiment, the heating belt is further wrapped on the outer surface of the detecting tube 300, and the heat gap caused by the arrangement of the detecting tube 300 is complemented by heating the detecting tube 300, so as to avoid the condensation of the fluid at the position.

In this embodiment, in order to avoid excessive impact of the probe 410 on the flow field, the probe 410 may be located entirely within the lumen of the probe tube 300 or slightly protruding from the probe tube 300. The fluid easily diffuses to the location of the probe 410 to contact the probe 410, and the probe 410 directly collects the fluid temperature. In alternative embodiments, the probe 410 may be extended to the middle of the pipeline in order to further improve the accuracy of the test.

Optionally, in this embodiment, the probe body 300 is screwed to the sidewall 100; in alternative embodiments, the probe body 300 and the sidewall 100 may be integrally formed.

In a particular embodiment, the fluid heating structure 010 may include a three-way fitting and a two-stage conduit. Two ports of the three-way joint, which face opposite directions, are respectively connected with two sections of pipelines and are used as the side wall 100 of the pipe body in the embodiment of the application; the other port of the three-way connector is the opening of the probe body 300 in the embodiment of the present application.

In another embodiment, the probe body 300 is a face seal joint, such as a VCR (Vacuum Coupling Radius Seal) joint, with a metal gasket between the face seal joint and the sidewall 100 to ensure tightness.

Optionally, the heating assembly 200 is screwed with the probe body 300, so that the heating assembly 200 is convenient to disassemble, replace and maintain.

Further, in the present embodiment, the fluid heating structure 010 further includes a controller 500, and the heating assembly 200 and the temperature measuring assembly 400 are electrically connected to the controller 500. The controller 500 may obtain the temperature of the fluid inside the sidewall 100 through the temperature measuring assembly 400, and then adjust the heating power of the heating assembly 200 according to the temperature, thereby adjusting the temperature of the fluid. For example, upon detecting that the temperature is lower than the desired temperature, the controller 500 controls the heating assembly 200 to increase the heating power to heat the fluid; upon detecting a temperature above a desired temperature, the controller 500 controls the heating assembly 200 to reduce the heating power to cool the fluid. In this embodiment, the temperature acquisition and control of the heating assembly 200 is real-time, so that the temperature of the fluid can be maintained within a desired temperature range, reducing the magnitude of temperature fluctuations.

The controller 500 may be an integrated circuit chip with signal processing capabilities. The controller 500 may be a general-purpose processor, including a central processing unit (Central Processing Unit, CPU for short), a network processor (Network Processor, NP for short), etc.; but may also be a Digital Signal Processor (DSP), application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic device, discrete hardware components. The controller 500 may be independently provided outside the heating assembly 200 and the temperature measuring assembly 400, or may be integrated in the temperature measuring assembly 400 or the heating assembly 200.

Fig. 2 is a schematic diagram of a fluid heating structure 010 in another embodiment of the present application. As shown in fig. 2, unlike the embodiment of fig. 1, in this embodiment, the side wall 100 encloses a can (e.g., a steel cylinder) and the probe 410 extends into the interior of the can through the probe 300. The tank functions more preferentially than the pipeline, and the flow diffusion of the fluid in the tank is less than that in the pipeline, so that the probe 410 is extended into the tank in the embodiment to ensure the detection accuracy. Further, when the fluid stored in the tank is liquid, the probe 410 can be inserted below the liquid level, so as to ensure sufficient contact with the fluid, and improve the detection accuracy. The heating assembly 200 wraps the entire can and the outer surface of the probe body 300. The arrangement of the heating assembly 200, the temperature measuring assembly 400, the probe tube 300 and the controller 500 in the embodiment of fig. 2 can refer to the embodiment of fig. 1, and will not be described herein again.

The embodiment of the application also provides a semiconductor fluid treatment system, which comprises the fluid heating structure 010 provided by the embodiment. Semiconductor fluid processing systems may process semiconductor process gases or liquids.

In summary, the fluid heating structure 010 provided in the present application includes the sidewall 100, the probe tube 300, the heating assembly 200, and the temperature measuring assembly 400. Wherein the side wall 100 encloses a cavity 110 for containing a fluid; one end of the detection tube body 300 is connected to the side wall 100 and is communicated with the cavity 110, and the other end of the detection tube body 300 forms an opening; the heating component 200 is attached to the outer surface of the side wall 100 and is used for heating the fluid in the cavity 110; the temperature measuring assembly 400 is connected with one end of the detecting tube body 300 far away from the side wall 100 in a sealing way, the temperature measuring assembly 400 comprises a probe 410 for acquiring temperature information, and the probe 410 is inserted into the tube cavity of the detecting tube body 300. In the fluid heating structure 010 of the present application, since the lumen of the probe tube 300 is communicated with the cavity 110 surrounded by the sidewall 100, and the probe 410 of the temperature measuring assembly 400 is protruded into the probe tube 300, the probe 410 can be in direct contact with the semiconductor material and detect the temperature. Compared with the probe 410 being disposed outside the side wall 100, the fluid heating structure 010 provided in the embodiment of the present application can more accurately detect the temperature of the fluid in the cavity 110, and further is more beneficial to accurately controlling the heating assembly 200 to regulate the temperature of the internal fluid.

The semiconductor fluid processing system provided in the embodiment of the present application includes the fluid heating structure 010 described above, and can accurately detect and control the temperature of the semiconductor fluid in the cavity 110.

The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims (10)

1. A fluid heating structure comprising:

a side wall (100), the side wall (100) enclosing a cavity (110) for containing a fluid;

a detection tube body (300), wherein one end of the detection tube body (300) is connected to the side wall (100) and is communicated with the cavity (110), and the other end of the detection tube body (300) forms an opening;

a heating assembly (200), wherein the heating assembly (200) is attached to the outer surface of the side wall (100) and is used for heating the fluid in the cavity (110);

the temperature measuring assembly (400) is in sealing connection with one end, far away from the side wall (100), of the detection tube body (300), the temperature measuring assembly (400) comprises a probe (410) used for acquiring temperature information, and the probe (410) is inserted into a tube cavity of the detection tube body (300).

2. The fluid heating structure of claim 1, wherein the heating assembly (200) is a heating band that wraps around the side wall (100).

3. The fluid heating structure of claim 2, wherein the heating band is further wrapped around an outer surface of the probe tube body (300).

4. The fluid heating structure of claim 1, wherein the heating assembly (200) is threadably connected to the probe tube body (300).

5. The fluid heating structure according to claim 1, wherein the probe tube (300) is threadably connected to the side wall (100).

6. The fluid heating structure of claim 5, wherein the probe tube (300) is a face seal joint with a metal sealing gasket disposed between the face seal joint and the sidewall (100).

7. The fluid heating structure of claim 1, wherein the fluid heating structure (010) further comprises a controller (500), and wherein the heating assembly (200) and the temperature measuring assembly (400) are each electrically connected to the controller (500).

8. A fluid heating structure according to any of claims 1-7, wherein the side walls (100) enclose a conduit, which conduit is connected perpendicularly to the probe body (300).

9. The fluid heating structure according to any one of claims 1-7, wherein the side wall (100) encloses a tank, the probe (410) extending into the tank through the probe tube (300).

10. A semiconductor fluid treatment system comprising the fluid heating structure (010) of any of claims 1-9.