WO2024036865A1 - 一种低温双面光伏组件 - Google Patents

一种低温双面光伏组件 Download PDF

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Publication number
WO2024036865A1
WO2024036865A1 PCT/CN2022/142774 CN2022142774W WO2024036865A1 WO 2024036865 A1 WO2024036865 A1 WO 2024036865A1 CN 2022142774 W CN2022142774 W CN 2022142774W WO 2024036865 A1 WO2024036865 A1 WO 2024036865A1
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Prior art keywords
layer
low
thermoelectric
thermoelectric module
sided photovoltaic
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Ceased
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PCT/CN2022/142774
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English (en)
French (fr)
Inventor
杨博
王淑娟
吴琼
赵磊
郗航
程文姬
牛凯
刘增博
李太江
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Xi'an Thermal Power Product Certification And Testing Co Ltd
Xian Thermal Power Research Institute Co Ltd
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Xi'an Thermal Power Product Certification And Testing Co Ltd
Xian Thermal Power Research Institute Co Ltd
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Priority to US18/251,633 priority Critical patent/US20240356487A1/en
Publication of WO2024036865A1 publication Critical patent/WO2024036865A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H10F77/63—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling
    • H10F77/67—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling including means to utilise heat energy directly associated with the photovoltaic cells, e.g. integrated Seebeck elements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
    • H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30—Electrical components
    • H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40—Thermal components
    • H02S40/42—Cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/85—Protective back sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • This application belongs to the technical field of photovoltaic modules, and specifically relates to a low-temperature double-sided photovoltaic module.
  • Photovoltaic power generation is a technology that uses the photovoltaic effect at the semiconductor interface to directly convert light energy into electrical energy. It is widely used in solar power generation. Photovoltaic modules are affected by the environment during long-term operation and dissipate heat themselves. If not Timely cooling of photovoltaic modules will produce hot spots, which will reduce the power generation efficiency of the modules and affect the normal operation of the photovoltaic power station.
  • thermoelectric module layer is added. Through temperature difference power generation, the temperature of the module can be reduced while increasing the power generation of the module. efficiency, solving the problem of high surface and internal temperatures of components affected by the external environment during use, which greatly affects the output power.
  • a low-temperature double-sided photovoltaic module includes a module backplane.
  • a junction box is provided on one side of the module backplane, and a thermoelectric module layer is provided on the other side.
  • the cold end of the thermoelectric module layer is connected to the module backplane, and the heat of the thermoelectric module layer
  • the terminal is connected to one side of the battery panel assembly, and a glass panel is provided on the other side of the battery panel assembly;
  • thermoelectric module layer includes multiple p/n-type semiconductors and multiple p/n-type semiconductor arrays.
  • the temperature difference with the battery panel assembly is used to achieve direct conversion of thermal energy to electrical energy.
  • one end of the p/n-type semiconductor is connected to the battery panel assembly through the base.
  • a corresponding metal connecting piece is provided between each p/n type semiconductor and the substrate.
  • thermoelectric module layer multiple p/n-type semiconductors are connected in series through bus bars to form a thermoelectric module layer, and the positive and negative electrodes of the thermoelectric module layer are respectively connected to the positive and negative electrodes of the junction box.
  • the p/n type semiconductor is connected to the component backplane through a metal connecting piece.
  • the positive and negative poles of the battery panel assembly are respectively connected to the positive and negative poles of the junction box.
  • the battery panel assembly includes multiple battery slices, and the multiple battery slices are connected in series or in parallel through bus bars.
  • the p/n type semiconductor is made of a nanoblock system, an organic polymer material system or a carbon material system.
  • a first EVA/POE layer is provided between the battery panel assembly and the glass panel
  • a second EVA/POE layer is provided between the thermoelectric module layer and the battery panel assembly
  • a third EVA/POE layer is provided between the thermoelectric module layer and the component backplane.
  • the glass panel, battery panel assembly, thermoelectric module layer and component backplane are encapsulated by an aluminum frame.
  • thermoelectric module layer uses temperature differences to generate electricity to achieve direct conversion of thermal energy to electrical energy. At the same time, it reduces the temperature of the photovoltaic module, prevents the generation of hot spots, and does not require additional bypass diodes; at the same time, it is Compared with conventional modules, the open circuit voltage and current of the module are increased, thereby increasing the power of the module.
  • thermoelectric module layer realizes temperature difference power generation, thereby reducing the temperature of the battery sheet and preventing the generation of hot spots.
  • the power generation efficiency of the module is further improved.
  • thermoelectric module layer is composed of p/n-type semiconductors through corresponding metal connecting pieces and a base.
  • the structure has strong vibration resistance, does not produce noise, has a long life, and is easy to install.
  • the base is generally made of high thermal conductivity materials.
  • the metal connecting piece is used to control the current.
  • thermoelectric module layer through a substrate and a metal connecting piece.
  • Each thermoelectric module layer is connected in series/parallel through bus bars to form a thermoelectric module layer.
  • the positive and negative electrodes of the thermoelectric module layer are Connect the positive and negative connections of the junction box respectively to achieve thermoelectric conversion.
  • the metal connecting piece in the thermoelectric module layer is connected to the component backplane through EVA/POE to form the cold end of the thermoelectric module layer.
  • the hot end and cold end of the thermoelectric module layer are combined to achieve thermoelectric conversion.
  • the positive and negative electrodes of the battery panel component board are respectively connected to the positive and negative electrodes of the junction box to achieve photoelectric conversion.
  • multiple battery sheets are closely arranged in series/parallel connection through bus bars to form a module panel; a single battery sheet cannot directly generate electricity, so the battery sheets are arranged in series/parallel connection to form a battery panel.
  • the core component of the photovoltaic power generation system its function is to convert solar energy into electrical energy.
  • thermoelectric elements composed of nano-bulk materials, organic polymer materials or carbon materials can achieve thermoelectric conversion and reduce the impact of temperature on photovoltaic cell power generation.
  • thermoelectric elements are small in size, light in weight, and cost-effective. Moving parts, no noise, no pollution and other advantages are in line with the concept of green energy.
  • EVA/POE is collectively referred to as photovoltaic film, which has the characteristics of light transmission, strong adhesion and durability, and can meet the needs of long-term outdoor working environments.
  • the first EVA/POE layer realizes the combination of photovoltaic module glass panels and cells, reducing the impact of the outdoor environment on the cells.
  • the second EVA/POE layer realizes the combination of the battery sheet and the thermoelectric module layer, which together form the hot end of the thermoelectric module layer to prevent the generation of hot spots.
  • the third EVA/POE layer realizes the combination of the thermoelectric module layer and the backplane, which together form the cold end of the thermoelectric module layer to achieve thermoelectric conversion.
  • an aluminum frame offers high strength and corrosion resistance to support and protect the entire panel and thermoelectric module layer.
  • the mounting holes of the photovoltaic modules are set on the aluminum frame, and the aluminum frame is connected to the photovoltaic bracket to form a photovoltaic array.
  • this application realizes photoelectric conversion and thermoelectric conversion by introducing a thermoelectric module layer, and increases the power generation of the module.
  • the power generation of the module of this application can be increased by 12.3%-14.8%; at the same time, due to the thermoelectric module layer
  • the thermoelectric module layer It has the advantages of small size and light weight, so it will not change the design standards of existing photovoltaic power stations; in addition, the module uses temperature differences to generate electricity, so it does not generate hot spots and saves diodes. It can also extend the life of photovoltaic modules and reduce power station safety risks.
  • FIG. 1 is a structural diagram of this application
  • FIG. 2 is a layer structure diagram of the thermoelectric module of this application.
  • FIG. 3 is a circuit connection diagram between the thermoelectric module layer and the battery sheet in this application.
  • Figure 4 is a conventional component circuit diagram
  • Figure 5 is a comparison chart of the I-V curves of the components of this application and conventional components.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, features defined as “first” and “second” may explicitly or implicitly include one or more of these features. In the description of this application, unless otherwise stated, “plurality” means two or more.
  • connection should be understood in a broad sense.
  • connection or integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two components.
  • connection or integral connection
  • connection or integral connection
  • connection can be a mechanical connection or an electrical connection
  • it can be a direct connection or an indirect connection through an intermediate medium
  • it can be an internal connection between two components.
  • specific meanings of the above terms in this application can be understood on a case-by-case basis.
  • thermoelectric module layer is mainly Bi 2 Te 3 , SnSe, Ag 2 Se, Cu 2 Se, Mg 2 Si, Mg 2 Sb 3 , Bi High-performance p-type and n-type thermoelectric devices composed of 2 S 3 and other nano-bulk systems, organic polymer material systems, and carbon material systems.
  • These thermoelectric materials use the temperature difference to achieve direct conversion of thermal energy into electrical energy through the Seebeck effect or the Peltier effect, solving the problem caused by the maximum power temperature coefficient of the crystalline silicon component (generally -0.35%/°C) The problem of reduced output power.
  • a low-temperature double-sided photovoltaic module of this application includes a glass panel 1, a first EVA/POE layer 2, a battery sheet 3, a second EVA/POE layer 4, a thermoelectric module layer 5, and a third EVA/POE layer.
  • the low-temperature double-sided photovoltaic module includes glass panel 1, first EVA/POE layer 2, cell sheet 3, second EVA/POE layer 4, thermoelectric module layer 5, third EVA/POE layer 6, module back
  • the board 7 and the junction box 8, and the aluminum frame 9 are arranged on the outside of the low-temperature double-sided photovoltaic module.
  • Glass panel 1 Covers the top of the battery sheet 3 to protect the battery sheet 3. It has very good light transmittance and high hardness, and can adapt to large day and night temperatures and harsh weather environments.
  • First EVA/POE layer 2 The glass panel 1 and the battery sheet 3 are connected through the EVA/POE film, and the EVA/POE film plays a bonding role in the middle.
  • Cell 3 The cell is the core component of the photovoltaic module. It uses polycrystalline silicon or monocrystalline silicon cells to convert light energy into electrical energy through the photovoltaic effect.
  • the cell panel assembly includes 64 or 72 cells 3.
  • Second EVA/POE layer 4 The battery sheet 3 and the thermoelectric module layer 5 are connected through EVA/POE, and the EVA/POE film plays a bonding role in the middle.
  • Thermoelectric module layer 5 composed of Bi 2 Te 3 , SnSe, Ag 2 Se, Cu 2 Se, Mg 2 Si, Mg 2 Sb3, Bi 2 S 3 and other nano-bulk systems, organic polymer material systems, carbon material systems, etc.
  • P-type and n-type thermoelectric materials realize thermoelectric power generation through the Seebeck effect or the Peltier effect.
  • the third EVA/POE layer 6 connects the thermoelectric module layer 5 and the module backplane 7 through EVA/POE, and the EVA/POE film plays a bonding role in the middle.
  • Component back panel 7 The back panel plays the role of protecting the battery cells.
  • the back panel must be sealed, insulated, waterproof, and aging resistant; the material of the component back panel 7 is TPT, TPE or tempered glass.
  • junction box 8 As a current transfer station, it protects the entire photovoltaic module power generation system. When a battery is short-circuited, the junction box automatically disconnects the short-circuited battery string.
  • the photovoltaic module frame is made of aluminum alloy, which has good strength and corrosion resistance; it can support and protect the entire module, and the mounting holes of the module are also on the frame and are connected to the bracket through the frame.
  • thermoelectric module layer 5 includes a plurality of p/n-type semiconductors 5-2.
  • the p/n-type semiconductors 5-2 are arranged in an array.
  • the upper ends are respectively connected to one side of the substrate 5-1 through metal connecting pieces 5-3.
  • the other side of the base 5-1 is connected to the corresponding battery piece 3, and the lower end is connected to the module backplane 7 through the third EVA/POE layer 6 through the metal connecting piece 5-3.
  • the substrate 5-1 is a protective thermoelectric material, and the material is generally ceramic or other high thermal conductivity materials.
  • the p/n type semiconductor 5-2 is a nano-bulk system composed of Bi 2 Te 3 , SnSe, Ag 2 Se, Cu 2 Se, Mg 2 Si, Mg 2 Sb 3 , Bi 2 S 3 , graphene, carbon nanotubes, etc. , p-type and n-type thermoelectric elements composed of organic polymer material systems or carbon material systems realize temperature difference power generation through the Seebeck effect (Seebeck) or Peltier effect (Peltier); both p-type thermoelectric elements and n-type thermoelectric elements The ends are welded to the metal connecting pieces 5-3 respectively to improve the conductive performance.
  • the metal connecting piece 5-3 is used to connect the p/n-type semiconductor 5-2 and plays a role in conducting current.
  • the material of the metal connecting piece 5-3 is a copper guide piece, a copper welding strip or a copper-plated metal sheet.
  • the module circuit of this application is that a plurality of battery cells 3 are connected in series through the bus bar 10 to form a battery panel assembly.
  • the positive electrode of the battery panel assembly is connected to the positive electrode of the junction box 8 through the front circuit of the assembly.
  • the negative electrode of the battery panel assembly is connected to the wiring
  • the negative electrode of the box 8 is connected; a plurality of p/n type semiconductors 5-2 are connected in series/parallel through the bus bar 10 to form the thermoelectric module layer 5, the positive electrode of the thermoelectric module layer 5 is connected to the positive electrode of the junction box 8, and the negative electrode of the thermoelectric module layer 5 Connect to the negative pole of junction box 8 through the circuit on the back of the module.
  • the conventional component connection circuit has a bypass diode 11, while the component proposed in this application reduces the bypass diode.
  • a plurality of battery sheets 3 are connected in series through the bus bar 10 to form a battery panel.
  • the positive electrode of the battery panel is the battery sheet circuit through the front of the component, and the circuit of the thermoelectric module layer 5 is on the back.
  • These two circuits are connected in parallel with the junction box 8 connection, which increases the open circuit voltage and current of the component. Therefore, both the conventional component circuit diagram and the component circuit diagram should show the positive pole of 8, and the negative pole of the battery panel is connected to the negative pole of junction box 8.
  • a bypass diode 11 is connected in parallel between the positive and negative electrodes of each string of cells.
  • the surface temperature of photovoltaic power station components is as high as 70 to 80°C, and the temperature difference from the ambient temperature reaches 30 to 40°C.
  • the temperature difference between the surface temperature of photovoltaic power station modules and the ambient temperature is 20 to 30°C.
  • thermoelectric conversion efficiency and temperature difference take the intermediate value.
  • the upper limit of the power generation capacity of the modules applied for in winter is:
  • the upper limit is when the temperature difference, absolute value of temperature coefficient and thermoelectric conversion efficiency are maximum.
  • thermoelectric materials At present, the power generation efficiency of thermoelectric materials is 16% to 20%. Taking a photovoltaic module with a power of 540W and a size of 2.3*1.1m as an example, combined with the module temperature coefficient (-0.35%/°C), it can be obtained that the photovoltaic module provided by this application has a lower temperature. At the same time, the power generation can be increased by 13.02% to 16.52%.
  • the low-temperature bifacial photovoltaic module of this application uses the photovoltaic effect and the Seebeck effect to not only generate photovoltaic power but also use waste heat for thermoelectric power generation, which greatly improves the utilization rate of solar energy and power generation efficiency; the thermoelectric module layer passes Thermoelectric power generation reduces the temperature of components.
  • the thermoelectric module layer has the characteristics of no noise, no wear, no leakage, and good mobility when running, and is not restricted by the on-site environment of the power station; it prevents hot spots caused by excessive local temperature of components and saves diodes; Reduce the aging rate of components, extend the service life of components, and improve component safety performance.

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Abstract

本申请公开了一种低温双面光伏组件，包括组件背板，组件背板的一侧设置有接线盒，另一侧依次设置有玻璃面板、电池板、热电模块层；热电模块层包括多个p/n型半导体，多个p/n型半导体阵列设置，利用与电池板组件的温差实现热能到电能的直接转换。本申请通过温差发电降低组件温度，在将余热用于温差发电的同时，提高了太阳能的利用率和光伏电站的发电量。

Description

一种低温双面光伏组件 技术领域
本申请属于光伏组件技术领域，具体涉及一种低温双面光伏组件。
背景技术
光伏发电是利用半导体界面的光生伏特效应，将光能直接转变为电能的一种技术，被广泛运用到太阳能发电中，光伏组件在长期运行过程中受环境的影响，且本身散发热量，如不及时为光伏组件降温会产生热斑，降低组件的发电效率影响光伏电站的正常的运作。
现有的光伏电站用组件降温技术，大多利用风扇向光伏电板吹送冷风或者增加冷却水装置，为光伏组件降温散热。然而这些方法不仅降温效果不明显而且耗费人力，造成水资源的浪费。因此，亟需开发一种更为主动的组件降温方式以提高光伏电站的发电效率及使用寿命。
发明内容
本申请所要解决的技术问题在于针对上述现有技术中的不足，提供一种低温双面光伏组件，在组件制造过程中增加了热电模块层，通过温差发电可实现降低组件温度的同时提高组件发电效率，解决现有组件使用过程中受外部环境的影响组件表面及内部温度高，极大影响输出功率的问题。
本申请采用以下技术方案：
一种低温双面光伏组件，包括组件背板，组件背板的一侧设置有接线盒，另一侧设置有热电模块层，热电模块层的冷端与组件背板连接，热电模块层的热端与电池板组件的一侧连接，电池板组件的另一侧设置有玻璃面板；
热电模块层包括多个p/n型半导体，多个p/n型半导体阵列设置，利用与电 池板组件的温差实现热能到电能的直接转换。
具体的，p/n型半导体的一端通过基底与电池板组件连接。
可选地，每个p/n型半导体与基底之间设置有对应的金属连接片。
具体的，多个p/n型半导体依次通过汇流条串联连接构成热电模块层，热电模块层的正极和负极分别连接接线盒的正极和负极。
可选地，p/n型半导体与组件背板之间通过金属连接片连接。
具体的，电池板组件的正极和负极分别连接接线盒的正极和负极。
可选地，电池板组件包括多个电池片，多个电池片采用串联或并联方式通过汇流条连接。
具体的，p/n型半导体采用纳米块体体系、有机高分子材料体系或碳材料体系制成。
具体的，电池板组件和玻璃面板之间设置有第一EVA/POE层，热电模块层和电池板组件之间设置有第二EVA/POE层，热电模块层和组件背板之间设置有第三EVA/POE层。
具体的，玻璃面板、电池板组件、热电模块层和组件背板通过铝边框封装。
与现有技术相比，本申请至少具有以下有益效果：
本申请一种低温双面光伏组件，热电模块层利用温差发电实现热能到电能的直接转换，同时降低了光伏组件的温度，可防止热斑的产生，且不需要额外设置旁路二极管；同时与常规组件相比，提高了组件开路电压及电流，进而提高组件功率。
可选地，热电模块层中陶瓷基底通过EVA/POE与电池片连接构成热电模块层热端，因此热电模块层实现温差发电，从而减低电池片温度防止热斑的产生。此外，由于电池片温度的降低，进一步提高了组件的发电效率。
可选地，热电模块层由p/n型半导体分别通过对应的金属连接片和基底组成，该结构抗震动性强、不会产生噪音、寿命长，安装方便，此外基底一般为高导热材料可提高热电转换效率，金属连接片用于控制电流。
可选地，多个p/n型半导体依次通过基底及金属连接片共同构成热电模块层，各热电模块层通过汇流条串/并联连接起来形成热电模块层层，热电模块层层的正极和负极分别连接接线盒的正极和负极连接，进而实现热电转换。
可选地，热电模块层中金属连接片通过EVA/POE与组件背板连接构成热电模块层的冷端，热电模块层热端与冷端结合，共同作用实现热电转换。
可选地，电池板组件板的正极和负极分别连接接线盒的正极和负极，实现光电转换。
可选地，多个电池片之间依次通过汇流条串/并联方式紧密排列起来形成组件电池板；单个电池片不能直接发电，因此将电池片通过串/并联方式排列起来组成电池板，电池板作为光伏发电系统的核心元件，其作用是将太阳能转换为电能。
可选地，由纳米块体材料、有机高分子材料或碳材料组成p型和n型热电元件可实现热电转换减少了温度对光伏电池发电的影响，此外热电元件具有体积小，重量轻，无运动部件，无噪音，无污染等优点符合绿色能源的理念。
可选地，EVA/POE统称光伏胶膜，具有透光、强粘性和持久性的特点，可以满足长时间的户外工作环境。第一EVA/POE层实现了光伏组件玻璃面板与电池片的结合，减少户外环境对电池片的影响。第二EVA/POE层实现了电池片与热电模块层的结合，共同构成热电模块层的热端可防止热斑的产生。第三EVA/POE层实现了热电模块层与背板的结合，共同构成热电模块层的冷端实现热电转换。
可选地，铝边框具有高强度和耐腐蚀性，可以支撑和保护整个电池板和热电模块层。同时光伏组件的安装孔设置在铝边框上，通过铝边框与光伏支架连接从而形成光伏阵列。
综上所述，本申请通过引入热电模块层实现了光电转换和热电转换，提高了组件发电量，以540W光伏组件为例本申请组件发电量可提升12.3％-14.8％；同时由于热电模块层具有体积小，重量轻等优点，因此不会改变现有光伏电站 的设计标准；此外，该组件利用温差发电因此不会产生热斑节省了二极管，同时可以延长光伏组件寿命降低电站安全隐患。
下面通过附图和实施例，对本申请的技术方案做进一步的详细描述。
附图说明
图1为本申请结构图；
图2为本申请热电模块层结构图；
图3为本申请热电模块层和电池片电路连接图；
图4为常规组件电路图；
图5为本申请组件与常规组件-I-V曲线对比图。
其中：1.玻璃面板；2.第一EVA/POE层；3.电池片；4.第二EVA/POE层；5.热电模块层；5-1.基底；5-2.p/n型半导体；5-3.金属连接片；6.第三EVA/POE层；7.组件背板；8.接线盒；9.铝边框；10.汇流条；11.旁路二极管。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“一侧”、“一端”、“一边”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第 二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
应当理解，当在本说明书和所附权利要求书中使用时，术语“包括”和“包含”指示所描述特征、整体、步骤、操作、元素和/或组件的存在，但并不排除一个或多个其它特征、整体、步骤、操作、元素、组件和/或其集合的存在或添加。
还应当理解，在本申请说明书中所使用的术语仅仅是出于描述特定实施例的目的而并不意在限制本申请。如在本申请说明书和所附权利要求书中所使用的那样，除非上下文清楚地指明其它情况，否则单数形式的“一”、“一个”及“该”意在包括复数形式。
还应当进一步理解，在本申请说明书和所附权利要求书中使用的术语“和/或”是指相关联列出的项中的一个或多个的任何组合以及所有可能组合，并且包括这些组合。
在附图中示出了根据本申请公开实施例的各种结构示意图。这些图并非是按比例绘制的，其中为了清楚表达的目的，放大了某些细节，并且可能省略了某些细节。图中所示出的各种区域、层的形状及它们之间的相对大小、位置关系仅是示例性的，实际中可能由于制造公差或技术限制而有所偏差，并且本领域技术人员根据实际所需可以另外设计具有不同形状、大小、相对位置的区域/层。
本申请提供了一种低温双面光伏组件，通过热电模块层降温增效，热电模块层主要为Bi 2Te 3、SnSe、Ag 2Se、Cu 2Se、Mg 2Si、Mg 2Sb 3、Bi 2S 3等纳米块体体系、有机高分子材料体系、碳材料体系组成的高性能p型和n型热电器件。 这些热电材料通过塞贝克效应(Seebeck效应)或帕尔帖效应(Peltier)利用温差实现热能到电能的直接转换，解决了由晶硅组件的最大功率温度系数(一般为-0.35％/℃)引起的输出功率降低的问题。
请参阅图1，本申请一种低温双面光伏组件，包括玻璃面板1、第一EVA/POE层2、电池片3、第二EVA/POE层4、热电模块层5、第三EVA/POE层6、组件背板7、接线盒8和铝边框9。
低温双面光伏组件从上至下依次包括玻璃面板1、第一EVA/POE层2、电池片3、第二EVA/POE层4、热电模块层5、第三EVA/POE层6、组件背板7和接线盒8，铝边框9设置在低温双面光伏组件的外侧。
玻璃面板1：覆盖在电池片3的上方用于保护电池片3，具有非常好的透光性和较高的硬度，可以适应很大的昼夜温度和恶劣的天气环境。
第一EVA/POE层2：通过EVA/POE薄膜将玻璃面板1与电池片3连接起来，EVA/POE薄膜在中间起到粘接作用。
电池片3：电池片是光伏组件的核心部件，采用多晶硅或单晶硅电池，通过光生伏特效应将光能转变为电能，电池板组件包括64或72块电池片3。
第二EVA/POE层4：通过EVA/POE将电池片3与热电模块层5连接起来，EVA/POE薄膜在中间起到粘接作用。
热电模块层5：由Bi 2Te 3、SnSe、Ag 2Se、Cu 2Se、Mg 2Si、Mg 2Sb3、Bi 2S 3等纳米块体体系、有机高分子材料体系、碳材料体系等组成的p型和n型热电材料，通过塞贝克效应(Seebeck)或帕尔帖效应(Peltier)实现温差发电。
第三EVA/POE层6：通过EVA/POE将热电模块层5与组件背板7连接起来，EVA/POE薄膜在中间起粘接作用。
组件背板7：背板起到保护电池片的作用，背板必须密封、绝缘、防水、耐老化；组件背板7的材质为TPT、TPE或钢化玻璃。
接线盒8：作为电流中转站，保护整个光伏组件的发电系统，当有电池出现短路时，接线盒自动断开短路的电池串。
铝边框9：光伏组件边框采用铝合金材质，具有较好的强度和耐腐蚀性；可以起到支撑和保护整个组件的作用，并且组件的安装孔也是在边框上面的，通过边框连接到支架。
请参阅图2，热电模块层5包括多个p/n型半导体5-2，p/n型半导体5-2阵列布置，上端分别通过金属连接片5-3连接基底5-1的一侧，基底5-1的另一侧分别连接对应的电池片3，下端通过金属连接片5-3经第三EVA/POE层6与组件背板7连接。
基底5-1为保护热电材料，材质一般为陶瓷或其它高导热材料。
p/n型半导体5-2为由Bi 2Te 3、SnSe、Ag 2Se、Cu 2Se、Mg 2Si、Mg 2Sb 3、Bi 2S 3、石墨烯、碳纳米管等纳米块体体系、有机高分子材料体系或碳材料体系组成的p型和n型热电元件，通过塞贝克效应(Seebeck)或帕尔帖效应(Peltier)实现温差发电；p型热电元件和n型热电元件的两端分别焊接在金属连接片5-3上，提高导电性能。
其中，金属连接片5-3用于连接p/n型半导体5-2，起到导流的作用。
金属连接片5-3的材质为铜导流片、铜焊带或镀铜金属片。
金属连接片5-3上焊接电源线，电源线连接电源完成低温热电器件的制备。
请参阅图3，本申请组件电路为多个电池片3依次通过汇流条10串联连接构成电池板组件，电池板组件的正极经组件正面电路连接接线盒8的正极，电池板组件的负极与接线盒8的负极连接；多个p/n型半导体5-2依次通过汇流条10串/并联连接构成热电模块层5，热电模块层5的正极连接接线盒8的正极，热电模块层5的负极经组件背面电路与接线盒8的负极连接。
请参阅图4，常规组件连接电路有旁路二极管11，而本申请提出的组件减少了旁路二极管。同时本申请为多个电池片3依次通过汇流条10串联连接构成电池板，电池板的正极经组件正面为电池片电路，背面为热电模块层5的电路，这两个电路并联与接线盒8连接，提高了组件开路电压及电流。所以常规组件电路图及该组件电路图均应展示8的正极，电池板的负极与接线盒8的负极连 接。此外，为防止热斑的产生在每一串电池片正负极之间并联一个旁路二极管11。
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。通常在此处附图中的描述和所示的本申请实施例的组件可以通过各种不同的配置来布置和设计。因此，以下对在附图中提供的本申请的实施例的详细描述并非旨在限制要求保护的本申请的范围，而是仅仅表示本申请的选定实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
夏季光伏电站的组件表面温度高达70～80℃，且与环境温度的温差达到30～40℃，冬季光伏电站组件表面温度与环境温度的温差为20～30℃。
请参阅图5，本申请中发电量提升的计算方法如下：
Figure PCTCN2022142774-appb-000001
η 2＝(T-T h)*|γ|
其中，Δη为本申请组件提升的发电量；η 1为本申请组件热电模块提升的发电量；η 2为常规光伏组件因温度损失发电量；S为光伏组件面积；ΔT为因热电模块发电降低的电池片温度，一般为20℃；α为热电模块转换效率；P为组件功率；T为组件表面温度；T h为环境温度；γ为组件温度系数。
因此，本申请组件夏季提升的发电量下限为：
Figure PCTCN2022142774-appb-000002
其中，热电转换效率和温差取中间值。
本申请组件冬季提升的发电量上限为：
Figure PCTCN2022142774-appb-000003
其中，上限为温差、温度系数绝对值及热电转换效率最大时。
目前热电材料的发电效率为16％～20％，以功率540W，尺寸2.3*1.1m的光伏组件为例结合组件温度系数(-0.35％/℃)能够得到本申请提供的光伏组件在降低温度的同时，发电量可提升提高13.02％～16.52％。
综上所述，本申请一种低温双面光伏组件，用光生伏特效应和Seebeck效应，不仅能光伏发电同时将余热用于温差发电，大大提高了太阳能的利用率和发电效率；热电模块层通过温差发电降低组件温度，热电模块层运行时具有无噪音、无磨损、无泄露、移动性好等特点，不受电站现场环境的限制；防止由于组件局部温度过高产生的热斑从而节省二极管；降低组件老化速率，延长组件使用寿命，提高组件安全性能。
以上内容仅为说明本申请的技术思想，不能以此限定本申请的保护范围，凡是按照本申请提出的技术思想，在技术方案基础上所做的任何改动，均落入本申请权利要求书的保护范围之内。

Claims (10)

  1. 一种低温双面光伏组件，其特征在于，包括组件背板(7)，组件背板(7)的一侧设置有接线盒(8)，另一侧设置有热电模块层(5)，热电模块层(5)的冷端与组件背板(7)连接，热电模块层(5)的热端与电池板组件的一侧连接，电池板组件的另一侧设置有玻璃面板(1)；
    热电模块层(5)包括多个p/n型半导体(5-2)，多个p/n型半导体(5-2)阵列设置，利用与电池板组件的温差实现热能到电能的直接转换。
  2. 根据权利要求1所述的低温双面光伏组件，其特征在于，p/n型半导体(5-2)的一端通过基底(5-1)与电池板组件连接。
  3. 根据权利要求2所述的低温双面光伏组件，其特征在于，每个p/n型半导体(5-2)与基底(5-1)之间设置有对应的金属连接片(5-3)。
  4. 根据权利要求1所述的低温双面光伏组件，其特征在于，多个p/n型半导体(5-2)依次通过汇流条(10)串联连接构成热电模块层(5)，热电模块层(5)的正极和负极分别连接接线盒(8)的正极和负极。
  5. 根据权利要求4所述的低温双面光伏组件，其特征在于，p/n型半导体(5-2)与组件背板(7)之间通过金属连接片(5-3)连接。
  6. 根据权利要求1所述的低温双面光伏组件，其特征在于，电池板组件的正极和负极分别连接接线盒(8)的正极和负极。
  7. 根据权利要求6所述的低温双面光伏组件，其特征在于，电池板组件包括多个电池片(3)，多个电池片(3)采用串联或并联方式通过汇流条(10)连接。
  8. 根据权利要求1所述的低温双面光伏组件，其特征在于，p/n型半导体(5-2)采用纳米块体体系、有机高分子材料体系或碳材料体系制成。
  9. 根据权利要求1所述的低温双面光伏组件，其特征在于，电池板组件和玻璃面板(1)之间设置有第一EVA/POE层(2)，热电模块层(5)和电池板组件之间设置有第二EVA/POE层(4)，热电模块层(5)和组件背板(7)之间设置有第三EVA/POE层(6)。
  10. 根据权利要求1所述的低温双面光伏组件，其特征在于，玻璃面板(1)、电池板组件、热电模块层(5)和组件背板(7)通过铝边框(9)封装。
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