CN206711906U - 一种太阳能电池组件及太阳能电池板 - Google Patents
一种太阳能电池组件及太阳能电池板 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 230000000712 assembly Effects 0.000 claims description 3
- 238000000429 assembly Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
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Abstract
本实用新型公开了一种太阳能电池组件,包括:至少两个串联连接的芯片组,所述芯片组包括多个并联连接的芯片单元、以及与所述芯片单元并联连接的一个旁路二极管,每个芯片单元包括一个或多个串联连接的光伏芯片,所述旁路二极管的正极与所述芯片单元的负极相连,所述旁路二级管的负极与所述芯片单元的正极相连。本实用新型还提供一种具有该太阳能电池组件的太阳能电池板。本实用新型不仅可以降低旁路二极管的用量,而且可以提高产品的经济性。
Description
技术领域
本实用新型涉及太阳能电池领域,具体涉及一种太阳能电池组件及太阳能电池板。
背景技术
目前,随着能源危机与环境污染的日趋严重,开发可再生清洁能源成为国际范围内的重大战略课题之一。太阳能是取之不尽、用之不竭,最清洁、最大的可再生能源,太阳能电池是通过光电效应或者光化学效应直接把光能转化成电能的装置,是太阳能利用的一种最直接的方式。
随着太阳电池的广泛应用,一些影响电池寿命的不利因素也随之出现,热斑就是其中之一。太阳电池热斑是指太阳能电池组件在阳光照射下,由于部分组件受到遮挡无法工作,使得被遮盖的部分升温远远大于未被遮盖部分,致使温度过高出现烧坏的暗斑。热斑可能导致整个电池组件损坏,造成损失。为此,在现有技术中,通常采用增加旁路二极管的方式来减少热斑效应对电池的影响。
现有的太阳能电池的连接方式大都采用芯片全部串联或先串后并的连接方式,为了防止热斑效应,通常采用在芯片上并联旁路二极管的措施。对于芯片全部串联的方式,旁路二极管用量多,成本高;对于先串后并的连接方式,虽然可以节省旁路二极管的数量,但由于多个芯片共用一个旁路二极管,如果其中一个芯片不工作或者被遮挡,会影响到其它芯片工作,因而经济效益差。
实用新型内容
本实用新型一方面提供一种太阳能电池组件,以降低旁路二极管的用量,提高组件的可靠性。
本实用新型另一方面提供一种太阳能电池板,以提高太阳能电池板的使用寿命,并降低成本,提高产品的经济效益。
为此,本实用新型提供如下技术方案:
本实用新型提供一种太阳能电池组件,包括:至少两个串联连接的芯片组,所述芯片组包括多个并联连接的芯片单元、以及与所述芯片单元并联连接的一个旁路二极管,每个芯片单元包括一个或多个串联连接的光伏芯片,所述旁路二极管的正极与所述芯片单元的负极相连,所述旁路二级管的负极与所述芯片单元的正极相连。
优选地,所述光伏芯片为以下任意一种:CIGS薄膜双玻组件芯片、薄膜太阳能电池芯片、晶硅太阳能电池芯片、非晶硅太阳能电池芯片。
优选地,每个芯片组包括三个芯片单元,每个芯片单元包括两个光伏芯片。
优选地,所述芯片组为18个。
优选地,所述旁路二极管的最大反向工作电流为大于或等于15A。
本实用新型还提供一种太阳能电池板,包括前面所述的太阳能电池组件、以及负端电极和正端电极;所述负端电极和所述正端电极均设置在所述光伏芯片下表面,或者所述负端电极设置在所述光伏芯片上表面,所述正端电极设置在所述光伏芯片下表面;
所述负端电极通过第一导流条及第一汇流条连接所述太阳能电池板的负极,所述第一导流条设置在所述太阳能电池组件区域内,所述第一汇流条设置在所述太阳能电池组件上表面的一侧;
所述正端电极通过第二导流条及第二汇流条连接所述太阳能电池板的正极,所述第二导流条设置在所述太阳能电池组件区域内,所述第二汇流条设置在所述太阳能电池组件下表面的一侧,并与所述第一汇流条反向或同向设置;
在所述第一导流条和/或所述第二导流条与所述太阳能电池组件之间还铺设有绝缘膜。
优选地,相邻的芯片组通过金属片连接。
优选地,相邻芯片组中串联的旁路二极管通过连接条连接。
优选地,所述连接条为铜条。
优选地,所述第一导流条和所述第一汇流条通过焊接方式连接;所述第二导流条和所述第二汇流条通过焊接方式连接。
本实用新型实施例提供的太阳能电池组件及太阳能电池板,将光伏芯片分组设计,采用串并联混联的方式,串联中有并联,并联中有串联的方式,每个芯片组中多个并联的芯片单元共用一个旁路二极管,大大减少了旁路二极管的用量,不仅有效降低了成本,而且提高了经济效益。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本实用新型中记载的一些实施例,对于本领域普通技术人员来讲,还可以根据这些附图获得其他的附图。
图1是本实用新型实施例太阳能电池组件的原理图;
图2是本实用新型实施例太阳能电池板的后视图;
图3是本实用新型实施例太阳能电池板中旁路二极管与光伏芯片的连接结构放大示意图。
具体实施方式
为了使本技术领域的人员更好地理解本实用新型实施例的方案,下面结合附图和实施方式对本实用新型实施例作进一步的详细说明。
如图1所示,是本实用新型实施例太阳能电池组件的原理图。
该太阳能电池组件包括:至少两个串联连接的芯片组,如图1所示,每个芯片组包括多个并联连接的芯片单元、以及与所述芯片单元并联连接的一个旁路二极管,每个芯片单元包括一个或多个串联连接的光伏芯片,图1中的每个芯片单元包括两个串联连接的光伏芯片。所述旁路二极管的正极与所述芯片单元的负极相连,所述旁路二级管的负极与所述芯片单元的正极相连。
在实际应用中,可以根据需要增减实际所需的芯片组数量,在需要多个上述芯片组时,如图1所示,所述多个芯片组依次串联连接。而且,每个芯片单元中可以只包括一个光伏芯片,也可以包括多个串联连接的光伏芯片。比如,可以将三个串接的光伏芯片作为一个芯片单元,每三个这样的芯片单元组成一个芯片组,18个串接的芯片组作为一个太阳能电池组件。另外,所述旁路二极管的工作参数也可以根据实际应用需求来设定,比如最大反向工作电流为大于或等于15A。当然,根据实际应用所需提供电流和电压的不同,上述串、并联的芯片可以进行适应性增减,相应地,所述旁路二极管的实际型号、参数等也可根据实际需要进行选择,对此本实用新型不做限定。
通过这样的结构设计,即串并联混联的方式,串联中有并联,并联中有串联,使多个芯片单元共用一个旁路二极管,每个芯片组中任何一个芯片单元受到遮挡无法工作时,都可以通过该芯片组中的旁路二极管避免其产生热斑效应,从而有效减少了旁路二极管的数量,降低了成本,提高了组件的可靠性。
本实用新型的太阳能电池组件结构中,所述光伏芯片可以适用于多种类型,比如,CIGS薄膜双玻组件芯片、薄膜太阳能电池芯片、晶硅太阳能电池芯片、非晶硅太阳能电池芯片等。
相应地,本实用新型实施例还提供一种具有上述太阳能电池组件结构的太阳能电池板,如图2所示,是该太阳能电池板的一种结构的后视图。
本实用新型的太阳能电池板包括上述太阳能电池组件、以及负端电极和正端电极。其中,所述负端电极和所述正端电极可以均设置在所述光伏芯片下表面,也可以将所述负端电极设置在所述光伏芯片上表面,将所述正端电极设置在所述光伏芯片下表面,图2所示结构中,所述负端电极和所述正端电极均设置在所述光伏芯片下表面。所述负端电极和正端电极用于引出电流。
如图2所示,所述负端电极通过第一导流条11及第一汇流条12连接所述太阳能电池板的负极,所述第一导流条11设置在所述太阳能电池组件区域内,所述第一汇流条12设置在所述太阳能电池组件上表面的一侧;所述正端电极通过第二导流条21及第二汇流条22连接所述太阳能电池板的正极,所述第二导流条21设置在所述太阳能电池组件区域内,所述第二汇流条22设置在所述太阳能电池组件下表面的一侧,并与所述第一汇流条21反向或同向设置。
需要说明的是,在实际应用中,所述第一导流条11可以设置在所述光伏芯片上表面,也可以设置在所述光伏芯片下表面,所述第二导流条21可以设置在所述光伏芯片下表面。相应地,为了避免导流条与光伏芯片相接触,可以在所述第一导流条和/或所述第二导流条与所述太阳能电池组件之间铺设有绝缘膜。
前面提到,根据应用需要,所述芯片组可以有多个,在这种情况下,如图2所示,相邻的芯片组间可以通过金属片31连接。同样,相邻的芯片组中的旁路二极管40与其电连接的光伏芯片之间通过金属片32相连,如图3所示。
另外,相邻芯片组中串联的旁路二极管可以通过连接条(比如铜条)连接。
需要说明的是,所述第一导流条11和所述第一汇流条12可以通过焊接方式连接;所述第二导流条21和所述第二汇流条22同样可以通过焊接方式连接。
本实用新型实施例提供的太阳能电池组件及太阳能电池板,将光伏芯片分组设计,采用串并联混联的方式,串联中有并联,并联中有串联的方式,每个芯片组中多个并联的芯片单元共用一个旁路二极管,大大减少了旁路二极管的用量,不仅有效降低了成本,而且提高了经济效益。
以上对本实用新型实施例进行了详细介绍,本文中应用了具体实施方式对本实用新型进行了阐述,以上实施例的说明只是用于帮助理解本实用新型的设计;同时,对于本领域的一般技术人员,依据本实用新型的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本实用新型的限制。
Claims (10)
1.一种太阳能电池组件,其特征在于,包括:至少两个串联连接的芯片组,所述芯片组包括多个并联连接的芯片单元、以及与所述芯片单元并联连接的一个旁路二极管,每个芯片单元包括一个或多个串联连接的光伏芯片,所述旁路二极管的正极与所述芯片单元的负极相连,所述旁路二级管的负极与所述芯片单元的正极相连。
2.根据权利要求1所述的太阳能电池组件,其特征在于,所述光伏芯片为以下任意一种:CIGS薄膜双玻组件芯片、薄膜太阳能电池芯片、晶硅太阳能电池芯片、非晶硅太阳能电池芯片。
3.根据权利要求1所述的太阳能电池组件,其特征在于,每个芯片组包括三个芯片单元,每个芯片单元包括两个光伏芯片。
4.根据权利要求3所述的太阳能电池组件,其特征在于,所述芯片组为18个。
5.根据权利要求4所述的太阳能电池组件,其特征在于,所述旁路二极管的最大反向工作电流为大于或等于15A。
6.一种太阳能电池板,其特征在于,包括如权利要求1至5任一项所述的太阳能电池组件、以及负端电极和正端电极;所述负端电极和所述正端电极均设置在所述光伏芯片下表面,或者所述负端电极设置在所述光伏芯片上表面,所述正端电极设置在所述光伏芯片下表面;
所述负端电极通过第一导流条及第一汇流条连接所述太阳能电池板的负极,所述第一导流条设置在所述太阳能电池组件区域内,所述第一汇流条设置在所述太阳能电池组件上表面的一侧;
所述正端电极通过第二导流条及第二汇流条连接所述太阳能电池板的正极,所述第二导流条设置在所述太阳能电池组件区域内,所述第二汇流条设置在所述太阳能电池组件下表面的一侧,并与所述第一汇流条反向或同向设置;
在所述第一导流条和/或所述第二导流条与所述太阳能电池组件之间还铺设有绝缘膜。
7.根据权利要求6所述的太阳能电池板,其特征在于,相邻的芯片组通过金属片连接。
8.根据权利要求7所述的太阳能电池板,其特征在于,相邻芯片组中串联的旁路二极管通过连接条连接。
9.根据权利要求8所述的太阳能电池板,其特征在于,所述连接条为铜条。
10.根据权利要求6至9任一项所述的太阳能电池板,其特征在于,所述第一导流条和所述第一汇流条通过焊接方式连接;所述第二导流条和所述第二汇流条通过焊接方式连接。
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---|---|---|---|---|
WO2018210348A1 (zh) * | 2017-05-19 | 2018-11-22 | 米亚索能光伏科技有限公司 | 一种太阳能电池组件及太阳能电池板 |
CN110047964A (zh) * | 2019-04-19 | 2019-07-23 | 泰州隆基乐叶光伏科技有限公司 | 光伏组件电路单元、光伏组件电路及光伏组件 |
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WO2020186800A1 (zh) * | 2019-03-20 | 2020-09-24 | 苏州大学 | 一种太阳能电池组件 |
CN111952405A (zh) * | 2019-04-30 | 2020-11-17 | 汉能移动能源控股集团有限公司 | 太阳能芯片串的连接方法 |
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CN201478310U (zh) * | 2009-06-26 | 2010-05-19 | 比亚迪股份有限公司 | 一种太阳能电池组件 |
US20120318319A1 (en) * | 2011-06-17 | 2012-12-20 | Solopower, Inc. | Methods of interconnecting thin film solar cells |
US20120318318A1 (en) * | 2011-06-17 | 2012-12-20 | Solopower, Inc. | Cigs based thin film solar cells having shared bypass diodes |
CN102437219B (zh) * | 2011-11-30 | 2014-04-02 | 马鞍山晶威电子科技有限公司 | 一种新型的晶体硅太阳能电池组件结构 |
CN102820341A (zh) * | 2012-09-11 | 2012-12-12 | 合肥工业大学 | 一种配置多层旁路二极管的光伏组件 |
CN203339197U (zh) * | 2013-07-15 | 2013-12-11 | 晶科能源有限公司 | 一种光伏组件 |
CN104505412B (zh) * | 2014-11-24 | 2017-05-10 | 连云港神舟新能源有限公司 | 一种具有拓扑结构的太阳能电池组件 |
US20160226439A1 (en) * | 2015-01-29 | 2016-08-04 | Solaria Corporation | Solar module with diode device for shading |
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WO2018210348A1 (zh) * | 2017-05-19 | 2018-11-22 | 米亚索能光伏科技有限公司 | 一种太阳能电池组件及太阳能电池板 |
WO2020186800A1 (zh) * | 2019-03-20 | 2020-09-24 | 苏州大学 | 一种太阳能电池组件 |
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CN111952405B (zh) * | 2019-04-30 | 2024-01-02 | 汉瓦技术有限公司 | 太阳能芯片串的连接方法 |
CN111403532A (zh) * | 2020-03-25 | 2020-07-10 | 常州亚玛顿股份有限公司 | 一种高效率低热斑效应光伏组件 |
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