WO2024032224A1 - 激光硼掺杂电池发射极的制备方法、以及电池和制备系统 - Google Patents

激光硼掺杂电池发射极的制备方法、以及电池和制备系统 Download PDF

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WO2024032224A1
WO2024032224A1 PCT/CN2023/104093 CN2023104093W WO2024032224A1 WO 2024032224 A1 WO2024032224 A1 WO 2024032224A1 CN 2023104093 W CN2023104093 W CN 2023104093W WO 2024032224 A1 WO2024032224 A1 WO 2024032224A1
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laser
silicon substrate
boron
battery
borosilicate glass
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PCT/CN2023/104093
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English (en)
French (fr)
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左国军
周志豪
王强
王科鹏
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常州捷佳创精密机械有限公司
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Publication of WO2024032224A1 publication Critical patent/WO2024032224A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of solar cell processing, and in particular to a method for preparing a selective emitter (SE) of a TOPCon battery by laser boron doping, a battery preparation method and a battery preparation system.
  • SE selective emitter
  • SE selective emitter
  • the present invention proposes a method for preparing a laser boron doped battery emitter, as well as a battery and a preparation system.
  • the technical solution adopted by the present invention is to design a method for preparing selective emitters of TOPCon cells by laser boron doping, which includes the following steps: 002. Select n-type single crystal silicon as the silicon substrate; 004. Duplex the silicon substrate. The surface is cleaned and textured; 006. Boron is diffused on the upper surface of the silicon substrate to obtain a shallowly doped p+ layer of boron on the upper surface and a borosilicate glass layer located on the upper surface of the shallowly doped p+ layer; 008. Use the first laser device to process the gate line position, and dope the boron atoms in the borosilicate glass layer to the gate line position.
  • the boron atoms in the borosilicate glass layer are doped to the gate line position.
  • the lightly doped p+ layer at the position forms a heavily doped p++ region; 010.
  • Use a second laser device to anneal the upper surface of the silicon substrate to repair the damage caused when the boron atoms are doped into the silicon substrate. Local damage; 012.
  • the chemical bond of boron and oxygen in the borosilicate glass absorbs the energy transmitted by the laser in the first laser device and breaks, turning into the boron atoms in a free state.
  • the boron atoms move from the inside of the borosilicate glass toward the The silicon substrate moves in the direction.
  • the laser power in the first laser device is relatively high, and the chemical bond of boron and oxygen absorbs the energy transmitted by the laser in the first laser device and is broken.
  • the laser action of the first laser device causes the boron atoms to be doped into the silicon matrix, and also causes local damage to the surface of the silicon matrix.
  • the silicon matrix 1 is laser processed so that the laser beam passes through The crystal lattice on the path is partially melted, and after cooling, the crystal lattice is rematched to form a single-crystal silicon matrix to repair the local damage.
  • the first laser device adopts a continuous laser or a pulse laser with a laser wavelength of 355nm-2000nm.
  • the process parameters of the first laser device are: the laser power is 10 watts-4000 watts, the laser processing speed is 1m/s-100m/s, and the light spot after the laser is focused on the surface of the silicon substrate is 40 microns-150 microns. Gaussian light spot or flat-top light spot, the process line width of laser processing of the silicon substrate surface is 40 microns - 150 microns; optionally, the flat-top light spot is a flat-top light spot with even energy distribution.
  • the second laser device adopts a pulse laser with a laser wavelength of 355nm-2000nm.
  • the process parameters of the second laser device are: the laser power is 10 watts to 4000 watts, the laser spot after focusing on the surface of the silicon substrate is a Gaussian spot or a flat-top spot of 40 microns to 300 mm, and the laser annealing temperature is 10°C-1200°C, laser annealing process time is 0-120min; optionally, the flat-top light spot is a flat-top light spot with even energy distribution.
  • the wet etching uses chain wet etching equipment.
  • the chain wet etching equipment sequentially adopts a pickling process, a cleaning process, and a drying process.
  • the concentration used is 10%- 40% hydrofluoric acid
  • the pickling temperature is 15°C-45°C
  • the pickling time is 10s-120s
  • pure water is used in the cleaning process
  • the cleaning temperature is 15°C-45°C
  • the cleaning time is 10s-120s
  • the drying temperature is 15°C-45°C, and the drying time is 10s-120s.
  • the present invention also designs a method for preparing a TOPCon structure battery by laser boron doping, which includes the above-mentioned method for preparing a TOPCon battery SE by laser boron doping, and also includes: preparing double-sided surfaces on both sides of the silicon substrate through a printing device Electrode, the gate line position on the upper surface of the silicon substrate is the electrode position, the contact part between the electrode and the silicon substrate is a heavily doped p++ region, and the area between the electrodes is a lightly doped p+ layer.
  • the method further includes: preparing an anti-reflection layer on the upper surface of the silicon substrate, and preparing a tunnel oxide layer on the lower surface of the silicon substrate.
  • the present invention also designs a laser boron doping system for selective emitter preparation of TOPCon batteries, which includes wet texturing equipment, a diffusion furnace, a first laser device, a second laser device, and a chain wet etching equipment arranged in sequence.
  • the wet texturing equipment is used for cleaning and texturing both sides of the silicon substrate;
  • the diffusion furnace is used for boron diffusion on the upper surface of the silicon substrate, and a shallowly doped p+ layer of boron is obtained on the upper surface , and a borosilicate glass layer located on the upper surface of the lightly doped p+ layer;
  • the first laser device is used to process the gate line position and dope boron atoms in the borosilicate glass layer into the gate line position to form a heavily doped p++ region;
  • the second laser device is used to perform annealing treatment on the upper surface of the silicon substrate to repair local damage caused when the boron atoms are doped into the silicon substrate;
  • the chain The wet method equipment is used to remove the borosilicate glass layer on the upper surface of the silicon substrate.
  • TOPCon Tel Oxide Passivated Contact
  • This technology first prepares a 1-2 nm tunnel oxide layer on the back of the battery, and then deposits a layer of doped polysilicon. The two together form a passivation contact structure, providing good interface passivation on the back of the silicon wafer. .
  • the invention solves the technical problem of SE preparation through one-time laser doping in the TOPCon battery process.
  • the laser processes the borosilicate glass reserved on the surface of the silicon substrate after boron diffusion, and uses the borosilicate glass as the boron source to process the silicon substrate.
  • Selective doping forming a heavily doped area at the gate line position, can reduce the contact resistance after the cell sheet is metallized (the metallization of the cell sheet is through screen printing, sintering, and then printing the electrode at the gate line position) , increase the filling factor of the battery, reduce the recombination of electrons and holes under the gate line, and increase the open circuit voltage of the battery; the shallow doping area reduces the recombination, increases the short-circuit current of the battery sheet, and ultimately effectively improves the conversion efficiency of the battery.
  • Figure 1 is a schematic structural diagram of the silicon substrate in each process according to the preferred embodiment of the present invention.
  • Figure 2 is a flow chart of a manufacturing method according to a preferred embodiment of the present invention.
  • the invention discloses a method for preparing a selective emitter of a TOPCon battery by laser boron doping. Referring to the flow chart shown in Figure 2, it includes the following steps:
  • Figure 1 shows a schematic structural diagram of the silicon substrate 1 in each process in the preferred embodiment, illustrating the preparation of the selective emitter of the TOPCon battery.
  • the present invention solves the technical problem of SE preparation through primary laser doping in the TOPCon battery process, that is, the borosilicate glass reserved on the surface of the silicon substrate 1 after boron diffusion is processed by laser, and the borosilicate glass is used as the boron source.
  • the silicon substrate 1 is selectively doped.
  • the chemical bond between boron and oxygen in the borosilicate glass absorbs the higher energy transmitted by the laser in the first laser device 5 and breaks, becoming the boron atom in a free state.
  • the boron atom is released from the The interior of the borosilicate glass swims in the direction of the silicon substrate.
  • step 004 only illustrates the pyramid-shaped texture formed by cleaning and texturing the upper surface of the silicon substrate 1.
  • Steps 006, step 008, step 010, and step 012 all illustrate the surface on the silicon substrate 1. Surface treatment.
  • the processing area of the first laser device 5 is the gate line position, which refers to the position where the printed electrode is to be printed.
  • the concentration of boron atoms in the lightly doped area increases, forming a heavily doped area, and then, on the silicon substrate
  • the upper surface of 1 forms a structure of lightly doped and heavily doped hybridization, that is, the contact part between the electrode and the silicon substrate is a heavily doped p++ region 4, and the area between the electrodes is a lightly doped p+ layer 2.
  • a p++ layer with a high surface concentration during the boron diffusion process is used as the doped boron source of the laser without forming a p+ layer; or an external boron source is used (using other equipment as a supply of boron source). device), in comparison, the present invention can simplify the preparation difficulty and reduce the cost.
  • the advantage of the technical solution of the present invention is that after light doping is performed on the surface of the silicon substrate 1, heavy doping is performed at the gate line position where the electrode will be printed in the subsequent step and is in contact with the silicon wafer, and light doping is performed at the position between the electrodes. It can reduce the recombination of the diffusion layer, improve the short-wave response of light, and at the same time reduce the contact resistance between the front metal electrode and silicon, so that the short-circuit current, open-circuit voltage and fill factor are better improved, thereby improving the conversion efficiency.
  • the laser action of the first laser device 5 causes the boron atoms to be doped into the silicon substrate 1 and also causes local damage to the surface of the silicon substrate 1. Therefore, after the first laser device 5 processes the grid line positions, the The silicon substrate 1 cell sheet undergoes laser annealing treatment through the second laser device 6 to repair the lattice mismatch in the silicon substrate 1 caused by laser processing, reduce the recombination of holes and electrons, and further improve the conversion efficiency of the cell. That is, after step 010, laser processing is performed on the silicon substrate 1, so that the crystal lattice on the path passed by the laser beam is partially melted. After cooling, the crystal lattice is rematched to form a single-crystal silicon substrate to repair the local damage. .
  • the silicon substrate 1 cell piece After the annealing is not completed, the silicon substrate 1 cell piece enters the wet equipment to remove the borosilicate glass layer 3 on the surface of the silicon substrate 1 to complete the preparation of the selective emitter SE of the TOPCon cell.
  • the selective emitter SE of the TOPCon battery is successfully prepared.
  • the laser processing area reduces the contact resistance between the silicon substrate 1 and the metal electrode, and increases the filling factor of the battery;
  • the shallowly doped area reduces recombination and increases the short-circuit current of the cell, which can ultimately effectively improve the conversion efficiency of the cell.
  • Step 014 Coat the upper and lower surfaces of the silicon substrate 1, that is, make a tunnel oxide layer on the lower surface of the cell and an anti-reflective layer on the upper surface;
  • Step 016 After step 014, use screen printing and sintering to prepare electrodes on both sides of the silicon substrate 1 (that is, prepare electrodes on the upper surface and lower surface respectively) to complete the preparation of high-efficiency TOPCon batteries.
  • the first laser device 5 adopts a continuous laser or a pulse laser with a laser wavelength of 355nm-2000nm.
  • the laser power is 10 watts - 4000 watts
  • the laser processing speed is 1 m/s - 100 m/s
  • the light spot after the laser is focused on the surface of the silicon substrate 1 is a Gaussian spot of 40 microns - 150 microns or a flat top with uniform energy distribution.
  • the shape of the light spot is square or circular, including rectangular, square, circular, elliptical and other geometric shapes.
  • the process line width of laser processing of the surface of the silicon substrate 1 is 40 microns to 150 microns.
  • Laser SE processing is a solution to doping B (boron) in BSG into P+ by combining the parameters of the laser with a laser emitter with better penetration and increased thermal effect, such as an infrared laser emitter.
  • the B source is generally an external B source such as boron source slurry. Additional processes and equipment are introduced to add the boron source, which will increase production costs.
  • the laser action of the first laser device 5 causes boron atoms in the borosilicate glass layer to be doped into the silicon substrate 1 (the high energy of the laser is used to separate the boron source in the borosilicate glass and enter the silicon substrate 1), At the same time, local damage occurs on the surface of the silicon substrate 1.
  • laser processing is performed on the silicon substrate 1, so that the crystal lattice on the path passed by the laser beam is partially melted. After cooling, the crystal lattice is rematched to form a single crystal state. silicon matrix to repair the local damage.
  • the first laser device 5 is used to process the grid line position, and the laser acts directly on the borosilicate glass.
  • the laser used in this process can be a 500W infrared 1064nm wavelength continuous laser.
  • the power used by the laser is 180W
  • the scanning speed of the laser is 20m/s
  • the laser processing line width is 90 microns.
  • the infrared 1064nm laser has good permeability to crystalline silicon.
  • the effect of the infrared laser on the silicon substrate 1 can be directly applied to the deeper area inside the silicon substrate 1.
  • the infrared laser has better penetrability and higher
  • the thermal effect of the borosilicate glass layer 3 on the surface of the silicon substrate 1 is processed.
  • the chemical bond of boron and oxygen in the borosilicate glass is broken due to the absorption of higher energy transmitted by the laser and becomes a free state.
  • the laser-doped boron atoms It moves from the interior of the borosilicate glass toward the molten silicon matrix 1 due to the higher power of the laser. Since the laser has higher energy, the energy transferred to the boron atoms is greater.
  • the silicon matrix 1 below the borosilicate glass layer 3 The area and depth of layer melting will also be larger and deeper relative to laser phosphorus-doped SE on p-type cells. Therefore, the free boron atoms that have obtained higher energy can penetrate deeper into the silicon substrate 1 through diffusion movement, forming a p++ heavily doped region.
  • the sheet resistance drop is ⁇ 40 ⁇
  • the ECV test diffusion depth is ⁇ 0.7 microns
  • the surface doping concentration of the silicon substrate 1 is >1E+19 atoms/cm3, and the concentration decreases gently.
  • the second laser device 6 adopts a pulse laser with a laser wavelength of 355nm-2000nm.
  • the process parameters of the second laser device 6 are: the laser power is 10 watts to 4000 watts, and the light spot after the laser is focused on the surface of the silicon substrate 1 is a Gaussian light spot of 40 microns to 300 mm or a flat-top light spot with uniform energy distribution. , the spot shape is square or circular, including rectangle, square, circle, oval and other geometric shapes.
  • the temperature of laser annealing is 10°C-1200°C, and the laser annealing process time is 0-120min.
  • the second laser device 6 can use a nanosecond laser with a wavelength of 1064 nm, a laser power of 100 W, and an annealing temperature of 800°C. Since the high-power infrared laser first laser device 5 processes the silicon substrate 1 in step 008, boron atoms diffuse into the silicon substrate 1, and at the same time, the laser processing area of the silicon substrate 1 will appear due to the action of the high-power laser. The damage that occurs includes problems such as mismatch of the crystal silicon lattice and the breakage of chemical bonds connecting atoms. The main function of laser annealing is to repair the damage to the silicon substrate 1 caused by high-power laser processing of the silicon substrate 1 .
  • the laser beam irradiates the surface of the doped silicon substrate 1, and the lattice of the silicon substrate 1 material is heated in a short time through electro-optical coupling, causing the lattice on the path where the laser beam passes to locally melt.
  • the atoms in the lattice After leaving their equilibrium positions, a transition from solid phase to liquid phase occurs, and the crystal lattice is rematched.
  • the laser beam penetrates to a depth greater than the depth of damage to the silicon substrate 1, the silicon substrate 1 reaches the single crystal layer of the silicon substrate 1, and after cooling, single crystal silicon is epitaxially grown in the liquid phase on the surface of the single crystal region that is not damaged by doping, reaching Repair and eliminate lattice defects in silicon substrate 1.
  • Laser annealing is used to repair and eliminate lattice defects in the silicon substrate.
  • the process is stable.
  • laser annealing can effectively reduce the energy consumption of the equipment, significantly reduce the annealing time, and greatly increase the production capacity.
  • the improvement reduces the operating cost of the equipment and the cost of the cells, and increases the competitiveness of customers in the TOPCon cell market.
  • Embodiment 1 On the basis of Embodiment 1, Embodiment 2 or Embodiment 3, further, use wet etching equipment to remove the borosilicate glass layer 3 on the upper surface of the silicon substrate 1.
  • the wet etching uses chain wet etching equipment. , the chain wet etching equipment sequentially adopts a pickling process, a cleaning process, and a drying process.
  • hydrofluoric acid with a concentration of 10%-40% is used, and the pickling temperature is 15°C- 45°C, the pickling time is 10s-120s; pure water is used in the cleaning process, the cleaning temperature is 15°C-45°C, the cleaning time is 10s-120s; the drying temperature in the drying process is 15°C -45°C, drying time is 10s-120s.
  • the back surface i.e., the lower surface
  • the upper surface with the borosilicate glass layer 3 faces downward.
  • the back surface of the silicon substrate 1 is first processed. Spray a water film to protect the back side of the silicon substrate 1 from being etched by the acid, and then send the silicon substrate 1 into the pickling tank.
  • the rollers in the pickling tank drive the silicon substrate 1 to move at a constant speed on the upper surface of the acid liquid. After special treatment, there are many micro-grooves on the surface.
  • the roller rotates it carries acid liquid. The acid liquid is transferred to the borosilicate glass layer 3 of the silicon substrate 1, and the borosilicate glass layer 3 is removed through this method of liquid-carrying by the roller.
  • the silicon substrate 1 enters the pure water cleaning tank, and the silicon substrate 1 is cleaned by immersion and spraying.
  • the washing time is about 10 seconds, and the water temperature is 25°C.
  • drying process hot air is used to blow and dry the front and back sides of the silicon substrate 1 at the same time, and the drying time is about 10 seconds.
  • the invention also discloses a method for preparing a TOPCon structure battery by laser boron doping, which includes the above-mentioned method for realizing a selective emitter of a TOPCon battery by laser boron doping, and also includes: printing and sintering devices on the silicon substrate 1 Electrodes are prepared on both sides.
  • the gate line position on the upper surface of the silicon substrate 1 is the electrode position.
  • the contact part between the electrode and the silicon substrate is the heavily doped p++ region 4.
  • the area between the electrodes is the lightly doped p++ region.
  • the doped p+ layer 2, that is, the area between an electrode on the upper surface and an adjacent electrode is a lightly doped p+ layer 2.
  • the method further includes: preparing an anti-reflection layer on the upper surface of the silicon substrate, and preparing a tunnel oxide layer on the lower surface of the silicon substrate.
  • the present invention provides a method to achieve the preparation of TOPCon battery SE through one-time laser processing, and laser processing
  • the boron source in the boron-expanded borosilicate glass is used as the boron raw material for laser doping.
  • the process procedure is simple, and there is no need to reintroduce equipment other than the laser process, which reduces the equipment cost. cost.
  • the method of laser boron doping to achieve the preparation of TOPCon cell SE does not change the process sequence and process characteristics in the subsequent production processes of silicon substrate 1 cells.
  • the equipment cost is low and the degree of automation is high.
  • the process of laser boron doping SE It effectively improves the photoelectric conversion efficiency of TOPCon cells.
  • the cell efficiency is increased by more than 0.2%, which is recognized by users. It enhances customers' advantages in TOPCon cell production and increases customers' competitiveness in the cell market, providing a good foundation for TOPCon cells.
  • the improvement of photoelectric conversion efficiency provides an effective, fast and low-cost path.
  • the invention also discloses a selective emitter preparation system for TOPCon batteries achieved by laser boron doping, which includes wet texturing equipment, a diffusion furnace, a first laser device, a second laser device, and chain wet etching equipment arranged in sequence. , multiple devices are arranged in sequence, corresponding to the preparation equipment involved in the preparation step of the selective emitter in Embodiment 1 (or Embodiment 2, or Embodiment 3, or Embodiment 4 or Embodiment 5).
  • the wet texturing equipment is used for cleaning and texturing both sides of the silicon substrate.
  • the wet texturing equipment mostly uses trough type equipment. Multiple troughs arranged in parallel in sequence serve as texturing processing troughs.
  • a transport device such as a robot, transports silicon wafers to be processed between slots. Usually, the silicon wafers are carried in carriers, and the robot transfers the silicon wafers by moving the carriers.
  • the diffusion furnace is used to diffuse boron on the upper surface of the silicon substrate, and obtain a shallowly doped p+ layer of boron on the upper surface, and a borosilicate glass layer located on the upper surface of the shallowly doped p+ layer;
  • the first laser device is used to process the gate line position and dope boron atoms in the borosilicate glass layer to the gate line position to form a heavily doped p++ region;
  • the second laser device is used for annealing the upper surface of the silicon substrate to repair local damage caused when the boron atoms are doped into the silicon substrate;
  • the chain wet equipment is used to remove the borosilicate glass layer on the upper surface of the silicon substrate.
  • the chain wet method equipment can be seen in Embodiment 4. Specifically, the chain wet method uses a transmission roller to drive the silicon wafer.
  • the transmission roller is set up on the tank, and the transmission roller is partially immersed in the solution.
  • the single silicon wafer passes through the transmission roller. It is transported by rolling. During this period, when passing through the corresponding process tank or cleaning tank, as the transmission roller rolls, the solution adheres to the lower surface of the silicon wafer.

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Abstract

本发明公开了激光硼掺杂电池发射极的制备方法、以及电池和制备系统，其中电池发射极制备方法包括以下步骤：选择硅基体；对硅基体清洗制绒；对硅基体进行硼扩散，得到p+层和硼硅玻璃层；用第一激光装置对栅线位置加工，得到p++区；用第二激光装置对硅基体进行退火；去除硅基体上的硼硅玻璃层；本发明解决了激光一次掺杂实现SE制备的难题，激光对硼扩散后预留的硼硅玻璃进行加工，以硼硅玻璃作为硼源，对硅基体进行掺杂，在栅线位置形成重掺杂区域，电池片金属化后，可以降低接触电阻，增加电池的填充因子，减少栅线下方电子与空穴的复合，提高电池的开路电压；浅掺杂区域减少复合，增加电池片短路电流，最终有效提高电池的转换效率。

Description

激光硼掺杂电池发射极的制备方法、以及电池和制备系统 技术领域
本发明涉及太阳能电池片加工领域，尤其涉及一种激光硼掺杂实现TOPCon电池选择性发射极（SE）制备的方法、以及电池的制备方法和制备电池的制备系统。
 背景技术
目前，TOPCon电池技术已经开始规模化上线量产，选择性发射极（SE）技术作为电池产线上一种重要的提高电池转换效率的手段，具有很多的优点。包括降低电池与金属栅线的接触电阻，提高电池的开路电压和填充因子等特点，辅助电池效率提升0.2%以上。因此，如何设计一种控制简单、成本较低的激光硼掺杂实现TOPCon电池SE的方法是业内亟需解决的技术问题。
 发明内容
为了解决现有技术中存在的上述缺陷，本发明提出一种激光硼掺杂电池发射极的制备方法、以及电池和制备系统。
本发明采用的技术方案是设计一种激光硼掺杂实现TOPCon电池选择性发射极制备的方法，其包括以下步骤：002、选择n型单晶硅作为硅基体；004、对所述硅基体双面进行清洗制绒；006、在所述硅基体上表面进行硼扩散，在所述上表面得到硼的浅掺杂p+层、以及位于所述浅掺杂p+层上表面的硼硅玻璃层；008、利用第一激光装置对栅线位置进行加工，将所述硼硅玻璃层中的硼原子掺杂到栅线位置，实际是硼硅玻璃层中的硼原子掺杂在对处于栅线位置处的浅掺杂p+层，形成重掺杂p++区；010、利用第二激光装置对所述硅基体上表面进行退火处理，用以修复所述硼原子掺杂进入所述硅基体时造成的局部损伤；012、进行湿法刻蚀，去除所述硅基体上表面的所述硼硅玻璃层，完成选择性发射极的制备。
所述硼硅玻璃中的硼氧结合的化学键吸收第一激光装置中的激光传递的能量而断裂，变成处于游离状态的所述硼原子，所述硼原子从所述硼硅玻璃内部朝所述硅基片的方向游动。第一激光装置中的激光功率较高，硼氧结合的化学键吸收较高的第一激光装置中的激光传递的能量而断裂。
第一激光装置的激光作用使所述硼原子掺杂进入所述硅基体，同时也使所述硅基体表面出现局部损伤，经过010步骤中，对硅基体1进行激光加工，使得激光束穿过的路径上的晶格局部融化，冷却后晶格重新匹配，形成单晶状态的硅基体，用以修复所述局部损伤。
所述第一激光装置采用激光波长为355nm-2000nm的连续激光器或者脉冲激光器。
所述第一激光装置的工艺参数为：激光功率为10瓦-4000瓦，激光加工的速度为1m/s-100m/s，激光在所述硅基体表面聚焦后的光斑为40微米-150微米的高斯光斑或平顶光斑，激光加工所述硅基体表面的工艺加工线宽为40微米-150微米；可选地，平顶光斑为能量均匀分布的平顶光斑。
所述第二激光装置采用激光波长为355nm-2000nm的脉冲激光器。
所述第二激光装置的工艺参数为：激光功率为10瓦-4000瓦，激光在所述硅基体表面聚焦后的光斑为40微米-300毫米的高斯光斑或平顶光斑，激光退火的温度为10℃-1200℃，激光退火工艺时间为0-120min；可选地，平顶光斑为能量均匀分布的平顶光斑。
所述湿法刻蚀使用链式湿法刻蚀设备，所述链式湿法刻蚀设备依次采用酸洗工序、清洗工序、烘干工序，在所述酸洗工序中采用浓度为10%-40%的氢氟酸，酸洗温度为15℃-45℃，酸洗时间为10s-120s；在所述清洗工序中采用纯水，清洗温度为15℃-45℃，清洗时间为10s-120s；在所述烘干工序中烘干温度为15℃-45℃，烘干时长为10s-120s。
本发明还设计了一种激光硼掺杂实现TOPCon结构电池的制备方法，其包括上述的激光硼掺杂实现TOPCon电池SE制备的方法，还包括：通过印刷装置在所述硅基体两面制备双面电极，所述硅基体的上表面栅线位置为所述电极位置，所述电极与所述硅基片接触部位为重掺杂p++区，所述电极之间的区域为浅掺杂p+层。
在制备所述双面电极之前还包括：对所述硅基片上表面制备减反射层，对所述硅基片下表面制备隧穿氧化层。
本发明还设计了一种激光硼掺杂实现TOPCon电池选择性发射极制备系统，包括依次排列设置湿法制绒设备、扩散炉、第一激光装置、第二激光装置，链式湿法刻蚀设备，所述湿法制绒设备用于所述硅基体双面进行清洗制绒；所述扩散炉用于对所述硅基体上表面进行硼扩散，在所述上表面得到硼的浅掺杂p+层、以及位于所述浅掺杂p+层上表面的硼硅玻璃层；所述第一激光装置用于对栅线位置进行加工，将所述硼硅玻璃层中的硼原子掺杂到所述栅线位置，形成重掺杂p++区；所述第二激光装置用于述硅基体上表面进行退火处理，用以修复所述硼原子掺杂进入所述硅基体时造成的局部损伤；所述链式式湿法设备用于去除所述硅基体上表面的所述硼硅玻璃层。
在N型电池的技术路线中，TOPCon(Tunnel Oxide Passivated Contact，隧穿氧化钝化接触)技术具有低衰减、低功率温度系数、高双面率、高弱光响应能力等优良的特性。该技术首先在电池背面制备一层1～2纳米的隧穿氧化层，然后再沉积一层掺杂多晶硅，二者共同形成了钝化接触结构，为硅片的背面提供了良好的界面钝化。
本发明提供的技术方案的有益效果是：
本发明解决了TOPCon电池工艺中，激光一次掺杂实现SE制备的技术难题，激光对硼扩散后预留在硅基体表面的硼硅玻璃进行加工，以硼硅玻璃作为硼源，对硅基体进行选择性掺杂，在栅线位置形成重掺杂区域，电池片金属化后（电池片的金属化即通过丝网印刷、烧结，进而在在栅线位置印制的电极），可以降低接触电阻，增加电池的填充因子，减少栅线下方电子与空穴的复合，提高电池的开路电压；浅掺杂区域减少复合，增加电池片短路电流，最终有效提高电池的转换效率。
 附图说明
下面结合实施例和附图对本发明进行详细说明，其中：
图1是本发明较佳实施例硅基体在各工序中的结构示意图；
图2是本发明较佳实施例的制作方法流程图。
 具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明作进一步详细说明。应当理解，此处所描述的具体实施例仅仅用于解释本发明，并不用于限定本发明。
实施例一
本发明公开了一种激光硼掺杂实现TOPCon电池选择性发射极制备的方法，参看图2示出的流程图，其包括以下步骤：
002、选择n型单晶硅作为硅基体1；
004、对所述硅基体1双面进行清洗制绒；
006、在所述硅基体1上表面进行硼扩散，在所述上表面得到硼的浅掺杂p+层2、以及位于所述浅掺杂p+层2上表面的硼硅玻璃层3；
008、利用第一激光装置5对栅线位置进行加工，将所述硼硅玻璃层3中的硼原子掺杂到栅线位置，形成重掺杂p++区4；
010、利用第二激光装置6对所述硅基体1上表面进行退火处理，用以修复所述硼原子掺杂进入所述硅基体1时造成的局部损伤；
012、进行湿法刻蚀，去除所述硅基体1上表面的所述硼硅玻璃层3，完成选择性发射极的制备。
图1示出了较佳实施例中硅基体1在各工序中的结构示意图，示明的是TOPCon电池选择性发射极的制备。本发明解决了TOPCon电池工艺中，通过激光一次掺杂实现SE制备的技术难题，即通过激光对硼扩散后预留在硅基体1表面的硼硅玻璃进行加工，以硼硅玻璃作为硼源，对硅基体1进行选择性掺杂。所述硼硅玻璃中的硼氧结合的化学键吸收较高的所述第一激光装置5中的激光传递的能量而断裂，变成处于游离状态的所述硼原子，所述硼原子从所述硼硅玻璃内部朝所述硅基片的方向游动。
图1中，步骤004中仅示意的是硅基体1上表面进行清洗制绒，形成的金字塔状绒面，步骤006、步骤008、步骤010、步骤012中，均示意的是在硅基体1上表面进行的工艺处理。
第一激光装置5加工区域为栅线位置，指预要进行印刷印制电极的位置，在栅线位置处，浅掺杂区域的硼原子浓度增加，形成重掺杂区，进而，在硅基体1的上表面形成浅掺杂和重掺杂交错的结构，即电极与所述硅基片接触部位为重掺杂p++区4，所述电极之间的区域为浅掺杂p+层2。在重掺杂区域印刷烧结金属电极，与金属电极接触，降低接触电阻，增加电池的填充因子，减少栅线下方电子与空穴的复合，提高电池的开路电压；浅掺杂区域减少复合，增加电池片短路电流，最终有效提高电池的转换效率。
现有的一些方法中，采用的是在硼扩散过程中进行高表面浓度的p++层作为激光的掺杂硼源，没有形成p+层；或者是外接硼源（使用其他设备，作为硼源的供应装置），相比之，本发明可以简化制备难度降低成本。
本发明技术方案的优点在于：在硅基体1表面进行轻掺杂后，在栅线位置即将在后续步骤印刷电极的位置与硅片接触进行重掺杂，在电极之间位置进行轻掺杂，可降低扩散层复合，可提高光线的短波响应，同时减少前金属电极与硅的接触电阻，使得短路电流、开路电压和填充因子都得到较好的改善，从而提高转换效率。
第一激光装置5的激光作用使所述硼原子掺杂进入所述硅基体1，同时也使所述硅基体1表面出现局部损伤，故在第一激光装置5对栅线位置加工过后，对硅基体1电池片通过第二激光装置6进行激光退火处理，修复因激光加工导致的硅基体1内的晶格失配，减少空穴和电子的复合，进一步提升电池的转换效率。即经过010步骤中，对硅基体1进行激光加工，使得激光束穿过的路径上的晶格局部融化，冷却后晶格重新匹配，形成单晶状态的硅基体，用以修复所述局部损伤。
退火未完成后，硅基体1电池片进入湿法设备，去除硅基体1表面的硼硅玻璃层3，完成TOPCon电池选择性发射极SE的制备。
在整个制备方法的过程中，未使用额外添加的硼源作为掺杂源，相比于现有技术，减少了工艺难度，降低了电池片的制作成本，同时，并未改变在后续电池片的生产工序和工艺，大大的提高了本发明提供的方法的实用性，TOPCon电池选择性发射极SE的成功制备，激光加工区域降低了硅基体1与金属电极的接触电阻，增加电池的填充因子；浅掺杂区域减少复合，增加电池片短路电流，最终可以有效提高电池的转换效率。
完成选择性发射极的制备后：
步骤014：对硅基体1进行上表面和下表面镀膜，即在电池片下表面制做隧穿氧化层，上表面制做减反射层；
步骤016：经过步骤014后，采用丝网印刷烧结在硅基体1的双面制备电极（即在上表面和下表面分别制备电极），完成高效TOPCon电池的制备。
实施例二
  在实施例一的基础上，所述第一激光装置5采用激光波长为355nm-2000nm的连续激光器或者脉冲激光器。激光功率为10瓦-4000瓦，激光加工的速度为1m/s-100m/s，激光在所述硅基体1表面聚焦后的光斑为40微米-150微米的高斯光斑或能量均匀分布的平顶光斑，光斑形状是方形或圆形，包括长方形、正方形、圆形、椭圆形等几何形貌，激光加工所述硅基体1表面的工艺加工线宽为40微米-150微米。激光的参数结合激光的参数以及具有较好的穿透性和具有加高的热效应的激光发射器例如红外激光发射器，进行激光SE处理，是解决将BSG中的B（硼）掺杂到P+中的关键。现有技术中，B来源一般为外界的B源例如硼源浆料，额外引入其他工序和设备添加硼源，如此会增加生产成本。
第一激光装置5的激光作用使硼硅玻璃层中的硼原子掺杂进入所述硅基体1（利用激光的高能量把硼硅玻璃中的硼源分离出来，进入到硅基体1中），同时也使所述硅基体1表面出现局部损伤，经过步骤010，对硅基体1进行激光加工，使得激光束穿过的路径上的晶格局部融化，冷却后晶格重新匹配，形成单晶状态的硅基体，用以修复所述局部损伤。
在较佳实施例的加工中，利用第一激光装置5对栅线位置进行加工，激光直接作用在硼硅玻璃上，该工序使用的激光器可以为500W红外1064nm波长的连续激光器，在激光对硅基体1进行加工过程中，可选地，激光器使用的功率为180W，同时激光的扫描速度为20m/s，激光加工线宽为90微米。红外1064nm的激光对于晶硅具有较好的透过性，红外激光对于硅基体1的作用可以直接作用到硅基体1内部较深的区域，利用红外激光较好的穿透性和具有的较高的热效应，对硅基体1表面的硼硅玻璃层3进行加工，硼硅玻璃中的硼氧结合的化学键由于吸收较高的激光传递的能量而断裂，变成游离状态，激光掺杂的硼原子从硼硅玻璃内部游离向着由于激光较高功率作用的熔融的硅基体1进行运动，由于激光具有的能量较高，传递给硼原子的能量就较大，硼硅玻璃层3下方的硅基体1层熔融的区域和深度也相对于激光在p型电池上的激光磷掺SE会更大和更深。所以获得较高能量的游离的硼原子可以通过扩散运动更深的进入到硅基体1内部，形成p++的重掺杂区域。通过电池片方阻测试，方阻降幅≥40Ω，ECV测试扩散深度≥0.7微米，硅基体1表面掺杂浓度＞1E+19 atoms/cm3,且浓度下降平缓。
实施例三
在实施例一或实施例二的基础上，所述第二激光装置6采用激光波长为355nm-2000nm的脉冲激光器。
所述第二激光装置6的工艺参数为：激光功率为10瓦-4000瓦，激光在所述硅基体1表面聚焦后的光斑为40微米-300毫米的高斯光斑或能量均匀分布的平顶光斑，光斑形状是方形或圆形，包括长方形、正方形、圆形、椭圆形等几何形貌，激光退火的温度为10℃-1200℃，激光退火工艺时间为0-120min。
在较佳实施例的加工中，第二激光装置6可以使用1064nm波长的纳秒激光器，激光功率100W，退火温度为800℃。由于步骤008中高功率的红外激光第一激光装置5对硅基体1进行加工，使得硼原子扩散进入硅基体1中，同时带来的是硅基体1激光加工区域会出现由于高功率的激光作用而出现的损伤，包括晶体硅晶格的失配，原子连接的化学键断裂等问题，而激光退火的主要作用是修复由于高功率的激光加工硅基体1而造成的硅基体1的损伤。激光束通过照射掺杂的硅基体1表面，硅基体1材料的晶格在短时间内经过电光耦合而被加热，使得激光束穿过的路径上的晶格局部融化，当晶格中的原子离开他们的平衡位置后，就会发生固相向液相的转变，晶格发生重新的匹配。当激光束穿过深度大于硅基体1硅基体1损伤的深度，达到硅基体1的单晶体层，冷却后在未受掺杂损伤的单晶区表面的液相处外延生长出单晶硅，达到修复和消除硅基体1晶格缺陷的作用。使用激光退火的方式实现修复和消除硅基体1晶格缺陷的方法，工艺稳定，激光退火相较于目前常规的退火炉，可以有效的降低设备的能耗，退火时间大幅度减少，产能大幅度提升，降低了设备的运行成本和电池片的成本，增加客户在TOPCon电池片市场上的竞争力。
实施例四
在实施例一或实施例二或实施例三的基础上，进一步地，使用湿法设备去除硅基体1上表面的硼硅玻璃层3，所述湿法刻蚀使用链式湿法刻蚀设备，所述链式湿法刻蚀设备依次采用酸洗工序、清洗工序、烘干工序，在所述酸洗工序中采用浓度为10%-40%的氢氟酸，酸洗温度为15℃-45℃，酸洗时间为10s-120s；在所述清洗工序中采用纯水，清洗温度为15℃-45℃，清洗时间为10s-120s；在所述烘干工序中烘干温度为15℃-45℃，烘干时长为10s-120s。
所述硅基体1进入链式湿法设备时，背面（即下表面）朝上，带有硼硅玻璃层3的上面朝下，在进入链式湿法设备后先对硅基体1的背面进行喷淋水膜，保护硅基体1的背面不被酸液刻蚀作用，再将硅基体1送入酸洗槽，酸洗槽体中的滚轮带动硅基体1在酸液上表面匀速移动，滚轮经过特殊处理，表面存在很多微型槽，滚轮旋转时带有酸液，酸液转移到硅基体1的硼硅玻璃层3，通过这种滚轮带液的方式去除硼硅玻璃层3。
在所述清洗工序中，硅基体1进入纯水清洗槽，通过浸没加喷淋的方式对硅基体1进行清洗。水洗时间10s左右，水温常温25℃。
烘干工序中用热风同时对硅基体1正面和背面进行吹拂烘干，烘干时间10s左右。
实施例五
本发明还公开了一种激光硼掺杂实现TOPCon结构电池的制备方法，其包括上述的激光硼掺杂实现TOPCon电池选择性发射极的方法，还包括：通过印刷烧结装置在所述硅基体1两面制备电极，所述硅基体1的上表面栅线位置为所述电极位置，所述电极与所述硅基片接触部位为重掺杂p++区4，所述电极之间的区域为浅掺杂p+层2，即上表面一个电极与相邻一个电极之间的区域为浅掺杂p+层2。
在制备所述双面电极之前还包括：对所述硅基片上表面制备减反射层，对所述硅基片下表面制备隧穿氧化层。
相较于目前业内提供的二次硼扩和激光硼源浆料掺杂实现TOPCon电池SE的制备的方法，本发明提供了一种通过激光一次加工实现TOPCon电池SE的制备的方式，并且激光加工利用硼扩后的硼硅玻璃中的硼源作为激光掺杂的硼原料，不需要额外引入其他工序和设备添加硼源，工艺程序简单，不需要重新引入除激光工序外的设备，降低了设备成本。同时，激光硼掺杂实现TOPCon电池SE的制备的方法，并未改变在后续的硅基体1电池片后续的生产工序中的工艺顺序和工艺特征。在本发明中，通过在现有的TOPCon电池片生产产线中增加一套激光硼掺SE设备和一套激光退火设备，设备成本低，自动化程度高，同时通过增加激光硼扩SE的工序可以有效提高TOPCon电池片的光电转换效率，电池片效率提升0.2%以上，得到了用户的认可，提升客户在TOPCon电池片生产中的优势，增加客户在电池片市场上的竞争力，为TOPCon电池片光电转换效率的提升提供有效、快捷、低成本的路径。
实施例六
本发明还公开了一种激光硼掺杂实现TOPCon电池选择性发射极制备系统，包括依次排列设置湿法制绒设备、扩散炉、第一激光装置、第二激光装置，链式湿法刻蚀设备，多个设备依次排列，对应于实施例一（或实施例二、或实施三、或实施例四或实施例五）中的选择性发射极的制备步骤中涉及的制备设备。  
具体地，所述湿法制绒设备用于所述硅基体双面进行清洗制绒，湿法制绒设备多选用槽式设备，通过依次并列设置的多个槽体，作为制绒的加工槽，配合搬运装置，例如机械手，在槽与槽之间搬运待处理的硅片，通常地，硅片承载在载具中，机械手通过搬移载具实现硅片的转运。
所述扩散炉用于对所述硅基体上表面进行硼扩散，在所述上表面得到硼的浅掺杂p+层、以及位于所述浅掺杂p+层上表面的硼硅玻璃层；
所述第一激光装置用于对栅线位置进行加工，将所述硼硅玻璃层中的硼原子掺杂到所述栅线位置，形成重掺杂p++区；
所述第二激光装置用于述硅基体上表面进行退火处理，用以修复所述硼原子掺杂进入所述硅基体时造成的局部损伤；
所述链式式湿法设备用于去除所述硅基体上表面的所述硼硅玻璃层。
链式湿法设备可参见实施例四，具体地，链式湿法设备采用传动辊传动硅片，传动辊架设在槽体上，传动辊部分浸没在溶液中，单片硅片通过传动辊的滚动进行传送，期间，在经过对应的工艺槽或清洗槽时，随着传动辊的滚动，溶液附着在硅片的下表面。
以上实施例仅为举例说明，非起限制作用。任何未脱离本申请精神与范畴，而对其进行的等效修改或变更，均应包含于本申请的权利要求范围之中。

Claims (10)

  1. 一种激光硼掺杂实现TOPCon电池选择性发射极制备的方法，其特征在于，包括以下步骤：
    002、选择n型单晶硅作为硅基体（1）；
    004、对所述硅基体双面进行清洗制绒；
    006、在所述硅基体上表面进行硼扩散，在所述上表面得到硼的浅掺杂p+层（2）、以及位于所述浅掺杂p+层上表面的硼硅玻璃层（3）；
    008、利用第一激光装置（5）对栅线位置进行加工，将所述硼硅玻璃层中的硼原子掺杂到所述栅线位置，形成重掺杂p++区（4）；
    010、利用第二激光装置（6）对所述硅基体上表面进行退火处理，用以修复所述硼原子掺杂进入所述硅基体时造成的局部损伤；
    012、进行湿法刻蚀，去除所述硅基体上表面的所述硼硅玻璃层，完成选择性发射极的制备。
  2. 如权利要求1所述的激光硼掺杂实现TOPCon电池选择性发射极制备的方法，其特征在于，所述硼硅玻璃中的硼氧结合的化学键吸收所述第一激光装置（5）中的激光传递的能量而断裂，变成处于游离状态的所述硼原子，所述硼原子从所述硼硅玻璃内部朝所述硅基片的方向游动。
  3. 如权利要求1所述的激光硼掺杂实现TOPCon电池选择性发射极制备的方法，其特征在于，所述第一激光装置（5）采用激光波长为355nm-2000nm的连续激光器或者脉冲激光器。
  4. 如权利要求3所述的激光硼掺杂实现TOPCon电池选择性发射极制备的方法，其特征在于，所述第一激光装置（5）的工艺参数为：激光功率为10瓦-4000瓦，激光加工的速度为1m/s-100m/s，激光在所述硅基体（1）表面聚焦后的光斑为40微米-150微米的高斯光斑或平顶光斑，激光加工所述硅基体表面的工艺加工线宽为40微米-150微米。
  5. 如权利要求1所述的激光硼掺杂实现TOPCon电池选择性发射极制备的方法，其特征在于，所述第二激光装置（6）采用激光波长为355nm-2000nm的连续激光器或脉冲激光器。
  6. 如权利要求5所述的激光硼掺杂实现TOPCon电池选择性发射极制备的方法，其特征在于，所述第二激光装置（6）的工艺参数为：激光功率为10瓦-4000瓦，激光在所述硅基体（1）表面聚焦后的光斑为40微米-300毫米的高斯光斑或平顶光斑，激光退火的温度为10℃-1200℃，激光退火工艺时间为0-120min。
  7. 如权利要求1所述的激光硼掺杂实现TOPCon电池选择性发射极制备的方法，其特征在于，所述湿法刻蚀使用链式湿法刻蚀设备，所述链式湿法刻蚀设备依次采用酸洗工序、清洗工序、烘干工序，
    在所述酸洗工序中采用浓度为10%-40%的氢氟酸，酸洗温度为15℃-45℃，酸洗时间为10s-120s；
    在所述清洗工序中采用纯水，清洗温度为15℃-45℃，清洗时间为10s-120s；
    在所述烘干工序中烘干温度为15℃-45℃，烘干时长为10s-120s。
  8. 一种激光硼掺杂实现TOPCon结构电池的制备方法，其特征在于，包括如权利要求1-7中任一项权利要求所述的激光硼掺杂实现TOPCon电池选择性发射极制备的方法，还包括：
    通过印刷装置在所述硅基体（1）两面制备电极，所述硅基体的上表面栅线位置为所述电极位置，所述电极与所述硅基片接触部位为重掺杂p++区（4），所述电极之间的区域为浅掺杂p+层（2）。
  9. 如权利要求8所述的激光硼掺杂实现TOPCon结构电池的制备方法，其特征在于，在制备所述电极之前还包括：
    对所述硅基片上表面制备减反射层，对所述硅基片下表面制备隧穿氧化层。
  10. 一种激光硼掺杂实现TOPCon电池选择性发射极制备系统，其特征在于，包括：依次排列设置湿法制绒设备、扩散炉、第一激光装置、第二激光装置，链式湿法刻蚀设备，所述湿法制绒设备用于所述硅基体（1）双面进行清洗制绒；所述扩散炉用于对所述硅基体（1）上表面进行硼扩散，在所述上表面得到硼的浅掺杂p+层（2）、以及位于所述浅掺杂p+层上表面的硼硅玻璃层（3）；所述第一激光装置用于对栅线位置进行加工，将所述硼硅玻璃层中的硼原子掺杂到所述栅线位置，形成重掺杂p++区（4）；所述第二激光装置用于述硅基体上表面进行退火处理，用以修复所述硼原子掺杂进入所述硅基体时造成的局部损伤；所述链式式湿法设备用于去除所述硅基体上表面的所述硼硅玻璃层。
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