WO2024029612A1 - Système de traitement de substrat et procédé de traitement de substrat - Google Patents

Système de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2024029612A1
WO2024029612A1 PCT/JP2023/028509 JP2023028509W WO2024029612A1 WO 2024029612 A1 WO2024029612 A1 WO 2024029612A1 JP 2023028509 W JP2023028509 W JP 2023028509W WO 2024029612 A1 WO2024029612 A1 WO 2024029612A1
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gas
substrate
processing
plasma
chamber
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PCT/JP2023/028509
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English (en)
Japanese (ja)
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宏史 長池
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東京エレクトロン株式会社
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Publication of WO2024029612A1 publication Critical patent/WO2024029612A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present disclosure relates to a substrate processing system and a substrate processing method.
  • Patent Document 1 discloses a substrate processing system that includes a gas analyzer that samples and analyzes gas in a chamber via gas sampling piping and a valve. It has been disclosed that, for example, a quadrupole mass spectrometer or the like is used as the gas analysis device.
  • the present disclosure provides a substrate processing system and a substrate processing method that control plasma processing with high precision.
  • a chamber a substrate support section provided in the chamber, a gas supply section configured to supply gas into the chamber, and a substrate support section provided in the chamber, a gas supply section configured to supply gas into the chamber, an RF power supply configured to supply RF power to generate plasma from the gas in the plasma, a gas measurement unit configured to measure a dissociation state of the gas in the plasma, and a control unit.
  • the control unit controls to start processing the substrate placed on the substrate support in the chamber according to set substrate processing conditions, and controls the gas measurement during the processing of the substrate.
  • a substrate processing system that controls to acquire a dissociation state of the gas from a unit, and controls to adjust processing conditions of the substrate or a substrate to be processed after the substrate based on the dissociation state of the gas.
  • FIG. 1 is a configuration diagram of an example of a plasma processing system.
  • FIG. 1 is a configuration diagram of an example of a plasma processing apparatus.
  • FIG. 3 is a configuration diagram of another example of a plasma processing apparatus.
  • 5 is a flowchart showing an example of feedback control.
  • An example of a mass spectrum that measures the dissociation state of the processing gas. 7 is a flowchart showing another example of feedback control.
  • FIG. 1 is a configuration diagram of an example of a plasma processing system.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing system.
  • a plasma processing system includes a plasma processing apparatus 1 and a controller 2.
  • the plasma processing system is an example of a substrate processing system
  • the plasma processing apparatus 1 is an example of a substrate processing apparatus.
  • the plasma processing apparatus 1 includes a plasma processing chamber (chamber) 10, a substrate support section 11, and a plasma generation section 12.
  • the plasma processing chamber 10 has a plasma processing space.
  • the plasma processing chamber 10 also includes at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for discharging gas from the plasma processing space.
  • the gas supply port is connected to a gas supply section 20, which will be described later, and the gas discharge port is connected to an exhaust system 40, which will be described later.
  • the substrate support section 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.
  • the plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space.
  • the plasmas formed in the plasma processing space are capacitively coupled plasma (CCP), inductively coupled plasma (ICP), and ECR plasma (Electron-Cyclotron-resonance plasma).
  • CCP capacitively coupled plasma
  • ICP inductively coupled plasma
  • ECR plasma Electro-Cyclotron-resonance plasma
  • HWP Helicon wave excited plasma
  • SWP surface wave plasma
  • various types of plasma generation sections may be used, including an AC (Alternating Current) plasma generation section and a DC (Direct Current) plasma generation section.
  • the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal.
  • the RF signal has a frequency within the range of 100kHz to 150MHz.
  • the control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in this disclosure.
  • the control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1.
  • the control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3.
  • the control unit 2 is realized by, for example, a computer 2a.
  • the processing unit two a1 may be configured to read a program from the storage unit two a2 and perform various control operations by executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary.
  • the acquired program is stored in the storage unit 2a2, and is read out from the storage unit 2a2 and executed by the processing unit 2a1.
  • the medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3.
  • the processing unit 2a1 may be a CPU (Central Processing Unit).
  • the storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. Good.
  • the communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).
  • FIG. 2 is a configuration diagram of an example of a capacitively coupled plasma processing apparatus 1.
  • FIG. 3 is a configuration diagram of another example of the plasma processing apparatus 1.
  • the capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply section 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10 .
  • the gas introduction section includes a shower head 13.
  • Substrate support 11 is arranged within plasma processing chamber 10 .
  • the shower head 13 is arranged above the substrate support section 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 .
  • the plasma processing chamber 10 has a plasma processing space 10s defined by a shower head 13, a side wall 10a of the plasma processing chamber 10, and a substrate support 11. Plasma processing chamber 10 is grounded.
  • the shower head 13 and the substrate support section 11 are electrically insulated from the casing of the plasma processing chamber 10.
  • the substrate support section 11 includes a main body section 111 and a ring assembly 112.
  • the main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112.
  • a wafer is an example of a substrate W.
  • the annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in plan view.
  • the substrate W is placed on the central region 111a of the main body 111, and the ring assembly 112 is placed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.
  • the main body 111 includes a base 1110 and an electrostatic chuck 1111.
  • Base 1110 includes a conductive member.
  • the conductive member of the base 1110 can function as a lower electrode.
  • Electrostatic chuck 1111 is placed on base 1110.
  • Electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within ceramic member 1111a.
  • Ceramic member 1111a has a central region 111a. In one embodiment, ceramic member 1111a also has an annular region 111b. Note that another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b.
  • the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or may be placed on both the electrostatic chuck 1111 and the annular insulating member.
  • at least one RF/DC electrode coupled to an RF power source 31 and/or a DC power source 32, which will be described later, may be disposed within the ceramic member 1111a.
  • at least one RF/DC electrode functions as a bottom electrode. If at least one RF/DC electrode is supplied with a bias RF signal and/or a DC signal as described below, the RF/DC electrode is also referred to as a bias electrode.
  • the conductive member of the base 1110 and at least one RF/DC electrode may function as a plurality of lower electrodes.
  • the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.
  • Ring assembly 112 includes one or more annular members.
  • the one or more annular members include one or more edge rings and at least one cover ring.
  • the edge ring is made of a conductive or insulating material
  • the cover ring is made of an insulating material.
  • the substrate support unit 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature.
  • the temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof.
  • a heat transfer fluid such as brine or gas flows through the flow path 1110a.
  • a channel 1110a is formed within the base 1110 and one or more heaters are disposed within the ceramic member 1111a of the electrostatic chuck 1111.
  • the substrate support section 11 may include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.
  • the shower head 13 is configured to introduce at least one processing gas from the gas supply section 20 into the plasma processing space 10s.
  • the shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c.
  • the processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c.
  • the showerhead 13 also includes at least one upper electrode.
  • the gas introduction section may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.
  • SGI side gas injectors
  • the gas supply section 20 may include at least one gas source 21 and at least one flow rate controller 22.
  • the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 to the showerhead 13 via a respective flow controller 22 .
  • Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • gas supply 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one process gas.
  • Power supply 30 includes an RF power supply 31 coupled to plasma processing chamber 10 via at least one impedance matching circuit.
  • RF power source 31 is configured to supply at least one RF signal (RF power) to at least one bottom electrode and/or at least one top electrode.
  • RF power supply 31 can function as at least a part of the plasma generation section 12. Further, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W.
  • the RF power supply 31 includes a first RF generation section 31a and a second RF generation section 31b.
  • the first RF generation section 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit, and generates a source RF signal (source RF power) for plasma generation. It is configured as follows.
  • the source RF signal has a frequency within the range of 10 MHz to 150 MHz.
  • the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to at least one bottom electrode and/or at least one top electrode.
  • the second RF generating section 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power).
  • the frequency of the bias RF signal may be the same or different than the frequency of the source RF signal.
  • the bias RF signal has a lower frequency than the frequency of the source RF signal.
  • the bias RF signal has a frequency within the range of 100kHz to 60MHz.
  • the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies.
  • the generated one or more bias RF signals are provided to at least one bottom electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.
  • Power source 30 may also include a DC power source 32 coupled to plasma processing chamber 10 .
  • the DC power supply 32 includes a first DC generation section 32a and a second DC generation section 32b.
  • the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal.
  • the generated first DC signal is applied to at least one bottom electrode.
  • the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal.
  • the generated second DC signal is applied to the at least one top electrode.
  • the first and second DC signals may be pulsed.
  • a sequence of voltage pulses is applied to at least one lower electrode and/or at least one upper electrode.
  • the voltage pulse may have a pulse waveform that is rectangular, trapezoidal, triangular, or a combination thereof.
  • a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and the at least one bottom electrode. Therefore, the first DC generation section 32a and the waveform generation section constitute a voltage pulse generation section.
  • the voltage pulse generation section is connected to at least one upper electrode.
  • the voltage pulse may have positive polarity or negative polarity.
  • the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period.
  • the first and second DC generation units 32a and 32b may be provided in addition to the RF power source 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b. good.
  • the exhaust system 40 may be connected to a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example.
  • Evacuation system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by the pressure regulating valve.
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
  • the gas measurement unit 5 (5A) includes a gas measurement device 51, a valve 52, and a pipe 53.
  • One end of the pipe 53 is connected to a gas sampling port 10b provided in the side wall 10a of the plasma processing chamber 10.
  • the other end of the pipe 53 is connected to the gas measuring device 51.
  • the pipe 53 is provided with a valve 52 .
  • a quadrupole mass analyzer can be used as the gas measuring device 51.
  • a quadrupole mass spectrometer can measure trace components by separating gases in terms of mass. Additionally, a quadrupole mass spectrometer can measure gas dissociation caused by plasma.
  • a quadrupole mass spectrometer has an ion source section, a mass spectrometer section, and a detection section.
  • the ion source section includes a filament and a filament power source.
  • a filament power supply applies voltage to the filament. When a voltage is applied to the filament and the temperature reaches a high temperature, the filament emits thermoelectrons. The emitted thermionic electrons collide with the gas and ionize the gas.
  • the mass spectrometer applies a DC or AC voltage to four electrodes (quadrupole) to allow ions of a predetermined mass to pass through.
  • the detection section detects ions that have passed through the mass spectrometry section.
  • the valve 52 opens and closes the pipe 53 and creates a pressure difference between the pressure inside the plasma processing chamber 10 and the pressure on the gas measuring device 51 side.
  • the gas measurement unit 5 (5B) may be a differential pumping system. That is, the gas measurement unit 5 (5B) includes a gas measurement device 51, a valve 52, a pipe 53, and an exhaust system 54.
  • the exhaust system 54 can be connected, for example, between the valve 52 of the pipe 53 and the gas measuring device 51.
  • the exhaust system 54 may include a pressure regulating valve and a vacuum pump. The pressure of the gas supplied to the gas measuring device 51 is adjusted by the pressure regulating valve.
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
  • the gas measuring device 51 will be described as a quadrupole mass spectrometer, but is not limited to this.
  • the gas measuring device 51 may be, for example, a residual gas analyzer (RGA), an ion trap mass spectrometer, or a time-of-flight mass spectrometer (TOFMS).
  • RAA residual gas analyzer
  • TOFMS time-of-flight mass spectrometer
  • FIG. 4 is an example of a graph showing the dissociation state of the processing gas measured by the gas measuring device 51.
  • the pressure in the plasma processing chamber 10 is 20 mT (2.7 Pa)
  • the processing gases introduced from the gas supply unit 20 into the plasma processing space 10s are Ar gas 800 sccm, C 4 F 8 gas 20 sccm, and O 2 gas 20 sccm.
  • An RF signal is supplied from the RF power source 31 to the lower electrode and/or the upper electrode to generate plasma of these gases in the plasma processing chamber 10, and a QMS (gas measuring device 51) (hereinafter also referred to as QMS 51) generates plasma of these gases.
  • the composition ratio of the dissociated state of the gas was detected.
  • the vertical axis indicates the ion current ratio measured by the QMS 51, in other words, the composition ratio of the dissociated state of C 4 F 8 gas.
  • (a) shows the composition ratio in a state where no RF signal is applied.
  • (b) shows a state in which an LF signal of 100 W and an HF signal of 700 W are applied.
  • (c) shows the composition ratio in a state where 400 W of LF signal and 700 W of HF signal are applied.
  • (d) shows the composition ratio in a state where 700 W of LF signal and 700 W of HF signal are applied.
  • the LF signal and the HF signal are examples of RF signals, where the LF signal corresponds to a bias RF signal coupled to the bottom electrode, and the HF signal corresponds to a source RF signal coupled to the bottom electrode and/or the top electrode. . In the experiment of FIG. 4, the HF signal was applied to the top electrode.
  • the composition ratio of the dissociated state of the processing gas detected by the QMS 51 changes.
  • a plasma etching process (plasma treatment) using a CF-based etching gas
  • etching reaction that etches the target film
  • deposition deposit
  • the dissociation state of the processing gas is determined by the RF power, the flow rate of the processing gas contributing to etching (in the example of FIG. 4, the flow rate of C 4 F 8 gas), and the flow rate ratio of the processing gas (in the example of FIG. 4, the C 4 F 8 gas flow rate).
  • the process may also depend on the surface conditions of parts in the equipment, etc. Change.
  • the QMS 51 can monitor the plasma state by monitoring the dissociation state of the processing gas during plasma processing. That is, by detecting and analyzing the dissociation state of the processing gas using the QMS 51, it is possible to understand the processing state inside the plasma processing chamber 10. Further, by adjusting the processing conditions based on the detection results of the QMS 51, the plasma etching process can be controlled.
  • FIG. 5 is a flowchart showing an example of feedback control.
  • step S11 the control unit 2 sets processing conditions such as a processing recipe for the first substrate W. Processing conditions are set in a processing recipe and/or process parameters. For the first substrate W, the processing recipe and/or process parameters are read out from, for example, the processing recipe and/or process parameters stored in advance in the storage unit 2a2.
  • step S12 the control section 2 transports the first substrate W to the plasma processing chamber 10, and causes the substrate support section 11 to support the substrate W.
  • the control unit 2 performs a first plasma treatment on the substrate W based on the substrate treatment conditions.
  • step S14 the control unit 2 subjects the substrate W to a second plasma treatment based on the substrate processing conditions.
  • step S15 the control unit 2 carries out the first substrate W from the plasma processing chamber 10.
  • two different plasma treatments first plasma treatment and second plasma treatment
  • the first plasma treatment and the second plasma treatment performed on the substrate W are, for example, etching treatment using plasma.
  • the plasma processing apparatus 1 may perform only one plasma treatment (first plasma treatment) on the substrate W.
  • the dissociation state (composition ratio) of the processing gas is measured by the QMS 51. Further, when performing the second plasma treatment (step S14) on the first substrate W, the QMS 51 measures the dissociation state (composition ratio) of the processing gas. Then, the control unit 2 acquires the measurement results of the QMS 51.
  • control unit 2 performs processing condition adjustment (step S21), substrate transport (step S22), first plasma treatment (step S23), second plasma treatment (step S24), and the like for the second substrate W.
  • the substrate is carried out (step S25).
  • the processing condition adjustment (step S21) is performed by performing the first plasma processing (step S21) on the first substrate W.
  • the processing conditions in the first plasma processing (step S23) are adjusted based on the dissociation state (component ratio) of the processing gas measured by the QMS 51 when performing step S13).
  • the processing condition adjustment (step S21) is based on the dissociation state (composition ratio) of the processing gas measured by the QMS 51 when the second plasma processing (step S14) is performed on the first substrate W.
  • Conditions for the second plasma treatment (step S24) are adjusted.
  • step S23 the control unit 2 performs the first plasma treatment on the second substrate W based on the processing conditions adjusted in step S21. Furthermore, in step S24, the control unit 2 performs a second plasma treatment on the second substrate W based on the processing conditions adjusted in step S21.
  • the QMS 51 measures the dissociation state (composition ratio) of the processing gas. Further, when performing the second plasma treatment (step S24) on the second substrate W, the QMS 51 measures the dissociation state (composition ratio) of the processing gas. Then, the control unit 2 acquires the measurement results of the QMS 51.
  • the control unit 2 controls processing condition adjustment (step S31), substrate transport (step S32), and First plasma treatment (step S33), second plasma treatment (step S34), and substrate unloading (step S35) are performed.
  • the processing condition adjustment (step S31) is based on the dissociation of the processing gas measured by the QMS 51 when the first plasma processing (step S23) is performed on the second substrate W. Based on the state (component ratio), the processing conditions in the first plasma processing (step S33) are adjusted.
  • the processing condition adjustment (step S31) is based on the dissociation state (composition ratio) of the processing gas measured by the QMS 51 when the second plasma processing (step S24) is performed on the second substrate W. Conditions for the second plasma treatment (step S34) are adjusted.
  • the dissociation state of the processing gas is measured by the QMS 51 during the processing of the first substrate W, and based on the measured dissociation state, the second substrate W to be processed next to the first substrate W is
  • the processing conditions for the substrate W have been described as being adjusted, the present invention is not limited to this. Even if the configuration is such that the dissociation state of the processing gas is measured by the QMS 51 during the processing of the first substrate W, and the processing conditions of the substrate W to be processed after the first substrate W are adjusted based on the measured dissociation state. good.
  • the dissociation state of the processing gas is measured by the QMS 51, and based on the measured dissociation state, the second substrate W and the third substrate W to be processed after the first substrate W are processed.
  • the processing conditions may be adjusted.
  • the dissociation state of the processing gas is measured by the QMS 51, and the processing conditions of the third substrate W to be processed after the first substrate W are adjusted based on the measured dissociation state. You can.
  • the dissociation state (composition ratio) of the processing gas is measured by the QMS 51 during the first plasma treatment S13 and the second plasma treatment S14.
  • FIG. 6 is an example of a mass spectrum obtained by measuring the dissociation state of the processing gas (C 4 F 8 ) using the QMS 51.
  • the horizontal axis shows m/z
  • the vertical axis shows relative ion intensity. Note that FIG. 6 shows an example of the mass spectrum of C 4 F 8 when no plasma is generated.
  • the fragments of the processing gas can be divided into a main fragment 610 and a trace fragment 620.
  • the main fragment 610 is a fragment with a high detected relative ion intensity, in other words, a high composition ratio.
  • the trace amount existing fragment 620 is a fragment whose detected relative ion intensity is low, in other words, a trace amount existing fragment.
  • the QMS 51 is not limited to this.
  • the QMS 51 may have a specification that includes at least some of the main fragments 611 among the main fragments 610 with a high composition ratio in the measurable range.
  • the gas flow rate (flow rate ratio) of the CF-based gas when setting the processing conditions for the second substrate W in step S21, the gas flow rate (flow rate ratio) of the CF-based gas, the gas type of the CF-based gas (including the additive gas added to the CF-based gas). ), pressure, HF power (output of source RF signal), LF power (output of bias RF signal), and the like.
  • the processing conditions are set by lowering the HF power that makes a large contribution to the dissociation of the CF-based gas.
  • the processing conditions are set by lowering the HF power that makes a large contribution to the dissociation of the CF-based gas.
  • the flow rate ratio of the CF 4 gas may be changed.
  • the processing conditions are set by changing the gas flow rate ratio to decrease the C 4 F 8 flow rate and increase the C 4 F 8 flow rate ratio.
  • the flow rate ratio of C 4 F 8 which makes a large contribution to the deposition of reaction products, can be increased.
  • At least one of the processing conditions is changed. Specifically, the processing conditions are adjusted by increasing the HF power, which makes a large contribution to the dissociation of the CF-based gas. Thereby, the dissociation of the CF-based gas can be promoted, and the state of dissociation of the CF-based gas (processing gas) can be brought close to the target value.
  • the flow rate ratio of the CF 4 gas may be changed.
  • the processing conditions are set by changing the gas flow rate ratio so as to increase the C 4 F 6 flow rate and decrease the C 4 F 6 flow rate ratio.
  • FIG. 7 is a flowchart showing another example of feedback control.
  • step S51 the control unit 2 sets processing conditions for the substrate W.
  • the processing conditions for example, a processing recipe and/or process parameters stored in advance in the storage unit 2a2 are read out.
  • step S52 the control section 2 transports the substrate W to the plasma processing chamber 10, and causes the substrate support section 11 to support the substrate W.
  • step S53 the control unit 2 performs a plasma etching process on the substrate W based on the process conditions.
  • step S53 when plasma processing (step S53) is performed on the substrate W, the dissociation state (composition ratio) of the processing gas is measured by the QMS 51. Then, the control unit 2 acquires the measurement results of the QMS 51.
  • step S54 the control unit 2 determines whether the measured dissociation state is within a predetermined range. If the measured dissociation state is within the predetermined range (S54, YES), the control unit 2 continues the plasma treatment until the predetermined time (step S55), and subjects the substrate W to the plasma treatment.
  • the control unit 2 adjusts the dissociation state (composition ratio) of the processing gas measured by the QMS 51 when plasma processing S53 is performed on the substrate W. Based on this, the processing conditions for plasma processing are adjusted (step S56). Then, plasma processing is performed on the substrate W based on the adjusted processing conditions (step S57). Furthermore, when plasma processing (step S57) is performed on the substrate W, the QMS 51 measures the dissociation state (composition ratio) of the processing gas. Then, the control unit 2 acquires the measurement results of the QMS 51.
  • step S58 the control unit 2 determines whether the measured dissociation state is within a predetermined range. If the measured dissociation state is within the predetermined range (S58, YES), the control unit 2 continues the plasma treatment until the predetermined time (step S59), and subjects the substrate W to the plasma treatment.
  • the control unit 2 adjusts the dissociation state (composition ratio) of the processing gas measured by the QMS 51 when plasma processing S53 is performed on the substrate W. Based on this, the processing conditions for plasma processing are adjusted (step S60). Then, based on the adjusted processing conditions, the substrate W is subjected to plasma processing until a predetermined time (step S61). Note that when plasma processing (step S61) is performed on the substrate W, the dissociation state (composition ratio) of the processing gas is measured by the QMS 51, and if the measured dissociation state is not within a predetermined range, the processing conditions are readjusted. You can.
  • control unit 2 carries out the substrate W from the plasma processing chamber 10 (step S62).
  • the composition ratio of the processing gas is detected by the QMS 51 during the first plasma processing S53.
  • the QMS51 is capable of measuring the entire mass range of fragments expected from the processing gas. It is preferable that the specifications fall within this range, but the specification is not limited thereto.
  • the gas flow rate (flow rate ratio) of the CF-based gas in plasma processing S57, the gas type of the CF-based gas (including the additive gas added to the CF-based gas), the pressure, the HF power (the output of the source RF signal) , at least one of processing conditions such as LF power (output of bias RF signal) is changed.
  • the processing conditions of the plasma processing S57 are adjusted by lowering the HF power that makes a large contribution to the dissociation of the CF-based gas.
  • the processing conditions of the plasma processing S57 are adjusted by lowering the HF power that makes a large contribution to the dissociation of the CF-based gas.
  • the flow rate ratio of the CF 4 gas may be changed.
  • the processing conditions are set by changing the gas flow rate ratio to decrease the C 4 F 8 flow rate and increase the C 4 F 8 flow rate ratio.
  • the flow rate ratio of C 4 F 8 which makes a large contribution to the deposit, can be increased.
  • the processing condition setting S56 at least one of the processing conditions such as the gas flow rate (flow rate ratio) of the CF-based gas, the gas type (addition) of the CF-based gas, the pressure, the HF power, the LF power, etc. in the plasma processing S57 is set. adjust.
  • the processing conditions of plasma processing S57 are adjusted by increasing the HF power, which makes a large contribution to the dissociation of the CF-based gas. Thereby, the dissociation of the CF-based gas can be promoted and the state of dissociation of the CF-based gas can be brought closer to the target value.
  • the flow rate ratio of the CF 4 gas may be changed. The processing conditions are set by changing the gas flow rate ratio so as to increase the C 4 F 6 flow rate and decrease the C 4 F 6 flow rate ratio. Thereby, in plasma processing S57, the dissociation state of the CF-based gas can be brought close to the target value.
  • the QMS51 can be used to detect the dissociation state of the processing gas, which is an index directly connected to the chemical reaction of the etching process, and to understand the state of the apparatus, and the processing conditions can be adjusted based on the detection results of the QMS51. Through adjustment, plasma processing can be controlled.
  • the state of the apparatus can be determined by monitoring the actual measured value of the plasma, including an index such as the self-bias voltage Vdc, which is directly connected to the ion incident energy related to the physical reaction of the etching process.
  • composition ratio of the gas detected by the QMS 51 and the method of adjusting the processing conditions will be explained.
  • the HF signal is related to the control of the dissociation state. Therefore, the processing conditions for the HF signal can be optimized based on the dissociation state measured using QMS.
  • LF signals (particularly below 3 MHz) have a small influence on the dissociated state.
  • the LF signal is a parameter mainly effective for controlling the ion energy incident on the wafer. Therefore, when optimizing the processing conditions of the LF signal, in addition to the gas dissociation state measured by the gas measurement device 51, optimization is performed in combination with other monitoring methods and measurement results such as ion energy measurement, thereby achieving a wider range of results. Adjustment of processing conditions and process control can be achieved.
  • etching processing conditions can be automatically created by setting the desired device shape and inputting the monitoring results of the gas dissociation state and other values indicating the plasma state into the calculator. be able to.
  • the etching process conditions are automatically optimized by repeating the loop of inputting the shape result into the computer again and performing the etching process while monitoring the plasma again. can be converted into
  • a quadrupole mass spectrometer is preferable as the gas measuring device 51 that monitors the state of gas dissociation.
  • QMS generally performs separation by ionizing gas. During this ionization, gas molecules are dissociated to generate a plurality of fragments, which are counted using an FC (Faraday cup) or SEM (secondary electron amplifier). Therefore, if gas molecules are dissociated too much during ionization, the ionization efficiency increases and the measurement sensitivity improves, but information on the molecular structure is lost because the original gas molecules are dissociated too much.
  • FC Fluorday cup
  • SEM secondary electron amplifier
  • the QMS has a function that can vary or scan the ionization energy from about 15 eV to about 150 eV.
  • the dissociation state of the gas can be measured at a plurality of ionization energies, the gas state in the plasma can be more accurately grasped, and the substrate processing can be controlled with high precision.
  • QMS may be measured for all masses, or one or a certain number of masses may be selected and the ionization voltage may be scanned for the selected masses.
  • QMS requires measurement time if measurement is performed by continuously changing the ionization voltage. For this reason, QMS sets multiple ionization voltages and performs gas measurements while switching between each of the multiple ionization voltages, allowing it to measure extremely small amounts of gas while measuring the gas state in the plasma with high precision. It achieves the necessary high sensitivity and can acquire data in a short time.
  • the mass range of the QMS is preferably one that can handle up to 131 (C 3 F 5 ) or more. Furthermore, when a gas of C 5 F 8 or more is used in the process, the QMS preferably has a mass range of 193 or more.
  • monitoring the molecular weight in the range of about 1 to 200 using QMS is less effective for gases such as O 2 , Cl 2 , and HBr, which have simple dissociation states.
  • monitoring using QMS is extremely effective for CF-based gases, which have large molecules, complex structures, and the contribution of reaction products to deposition/etching varies greatly depending on the state of dissociation. It is especially suitable for etching equipment for dielectric films.
  • monitoring using QMS is also effective in plasma film forming processes where the gas dissociation state greatly affects film formation, the molecular size of the gas used is large, and the structure is complex.
  • it can be used to control the deposition characteristics (density, electrical conductivity, dielectric constant, dielectric strength, etc.) of reaction products, rather than the deposition and etching properties of reaction products.
  • a chamber a substrate support provided in the chamber; a gas supply configured to supply gas into the chamber; an RF power source configured to provide RF power to generate a plasma from the gas within the chamber; a gas measuring unit configured to measure a dissociation state of the gas in the plasma; comprising a control unit;
  • the control unit includes: Controlling to start processing of the substrate placed on the substrate support in the chamber according to the set substrate processing conditions, During the processing of the substrate, controlling to obtain the dissociation state of the gas from the gas measurement unit, controlling to adjust the processing conditions of the substrate or a substrate processed after the substrate, based on the dissociation state of the gas; Substrate processing system.
  • the control unit includes: using the adjusted processing conditions to control processing of the substrate or a substrate processed after the substrate;
  • the substrate processing system according to Supplementary Note 1. (Additional note 3)
  • the gas measurement unit is a quadrupole mass spectrometer,
  • the treatment of the substrate is an etching treatment,
  • the gas includes a gas in which the relationship between the etching reaction and the deposition reaction of a reaction product changes in the etching process depending on the dissociation state of the gas.
  • the substrate processing system according to any one of Supplementary Notes 1 to 3. (Appendix 5)
  • the gas is a fluorocarbon gas containing C and F.
  • the gas is C 4 F 8 gas.
  • the control unit includes: If the ratio of at least one of F and CF dissociated from the C 4 F 8 gas is greater than a predetermined target value, control is performed to determine that the C 4 F 8 gas is in a state of excessive dissociation;
  • the control unit includes: controlling the RF power source to reduce the output of the source RF signal when determining that the C 4 F 8 gas is in a state of excessive dissociation;
  • the gas is a mixed gas of CF 4 gas and C 4 F 6 gas,
  • the control unit includes: If the ratio of at least one of F and CF dissociated from the mixed gas is higher than a predetermined target value, control is performed so that the mixed gas is determined to be in a state of excessive dissociation.
  • the substrate processing system according to appendix 9. (Appendix 11)
  • the control unit includes: When determining that the mixed gas is in a state of excessive dissociation, controlling the gas supply unit to reduce the proportion of the CF 4 gas in the mixed gas;
  • the control unit includes: In the first substrate processing, the substrate is processed in the chamber using the set substrate processing conditions, and the gas dissociation state is controlled to be obtained from the gas measurement unit; controlling the substrate to be processed using the adjusted processing conditions in processing a second substrate different from the first substrate; The substrate processing system according to any one of Supplementary notes 1 to 11.
  • the control unit includes: In the processing of one substrate, the substrate is processed using the set substrate processing conditions, and the dissociation state of the gas is controlled to be obtained; controlling the substrate to be processed using the adjusted processing conditions in the processing of the one substrate; The substrate processing system according to any one of Supplementary notes 1 to 11.
  • a substrate processing method of a substrate processing system comprising: an RF power source configured to measure the dissociation state of the gas in the plasma; starting processing of the substrate placed on the substrate support in the chamber according to the set substrate processing conditions; acquiring the dissociation state of the gas from the gas measurement unit during the processing of the substrate; adjusting processing conditions for the substrate or a substrate to be processed after the substrate, based on the dissociation state of the gas; Substrate processing method. (Additional note 15) using the adjusted processing conditions to process the substrate or a substrate to be processed after the substrate; Substrate processing method according to appendix 14.
  • Plasma processing apparatus 2 Control unit 10 Plasma processing chamber (chamber) 11 Substrate support section 20 Gas supply section 30 Power supply 31 RF power supply 10b Gas sampling port 5 Gas measurement section 5A Gas measurement section 5B Gas measurement section 51 Gas measurement device 52 Valve 53 Piping 54 Exhaust system

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Abstract

L'invention concerne un système de traitement de substrat et un procédé de traitement de substrat pour commander avec précision un traitement au plasma.　Ce système de traitement de substrat comprend : une chambre ; une partie de support de substrat disposée dans la chambre ; une partie d'alimentation en gaz conçue de façon à fournir le gaz dans la chambre ; une alimentation électrique RF conçue pour fournir de l'énergie RF afin de générer du plasma à partir du gaz dans la chambre ; une partie de mesure de gaz conçue pour mesurer un état dissociatif du gaz dans le plasma ; et une unité de commande. L'unité de commande : commande de façon à démarrer le traitement d'un substrat placé sur la partie de support de substrat dans la chambre conformément à une condition de traitement définie du substrat ; commande de façon à acquérir l'état dissociatif du gaz à partir de la partie de mesure de gaz pendant le traitement du substrat ; et commande de façon à ajuster l'état de traitement du substrat ou d'un substrat à traiter après le substrat sur la base de l'état dissociatif du gaz.
PCT/JP2023/028509 2022-08-05 2023-08-04 Système de traitement de substrat et procédé de traitement de substrat WO2024029612A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277293A (ja) * 1999-03-25 2000-10-06 Univ Nagoya プラズマ処理装置
JP2001176853A (ja) * 1999-12-16 2001-06-29 Hitachi Ltd プラズマ処理装置
JP2005257651A (ja) * 2004-03-15 2005-09-22 Omron Corp プラズマ測定装置及びプラズマ測定方法
JP2008028022A (ja) * 2006-07-19 2008-02-07 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US20110174606A1 (en) * 2010-01-15 2011-07-21 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties Using a Quasi-Neutral Beam

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277293A (ja) * 1999-03-25 2000-10-06 Univ Nagoya プラズマ処理装置
JP2001176853A (ja) * 1999-12-16 2001-06-29 Hitachi Ltd プラズマ処理装置
JP2005257651A (ja) * 2004-03-15 2005-09-22 Omron Corp プラズマ測定装置及びプラズマ測定方法
JP2008028022A (ja) * 2006-07-19 2008-02-07 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US20110174606A1 (en) * 2010-01-15 2011-07-21 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties Using a Quasi-Neutral Beam

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