WO2024027326A1 - 一种温度控制装置及相关设备 - Google Patents

一种温度控制装置及相关设备 Download PDF

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Publication number
WO2024027326A1
WO2024027326A1 PCT/CN2023/098306 CN2023098306W WO2024027326A1 WO 2024027326 A1 WO2024027326 A1 WO 2024027326A1 CN 2023098306 W CN2023098306 W CN 2023098306W WO 2024027326 A1 WO2024027326 A1 WO 2024027326A1
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WIPO (PCT)
Prior art keywords
temperature
resonator
control device
temperature control
fixed
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PCT/CN2023/098306
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English (en)
French (fr)
Inventor
黄林海
孙丰沛
冯志宏
徐景辉
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华为技术有限公司
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Publication of WO2024027326A1 publication Critical patent/WO2024027326A1/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02433—Means for compensation or elimination of undesired effects
    • H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02338—Suspension means

Definitions

  • the present application relates to the field of temperature control structures, and in particular, to a temperature control device and related equipment.
  • MEMS devices are a type of micro-devices with movable mechanical structures that are manufactured based on semiconductor micro-machining processes and can realize the mutual conversion of mechanical motion and electrical signals. They are small in size and easy to integrate. , low power consumption, high sensitivity and low price. MEMS devices are widely used in fields such as sensors, wireless communications and intelligent systems, such as MEMS gyroscopes, MEMS accelerometers, MEMS micromirrors and MEMS oscillators. Among them, MEMS oscillators, as a new type of clock device, are gradually replacing traditional quartz oscillators in various fields such as mobile phones, automobiles, and wireless communications.
  • Oven-controlled MEMS oscillator is a type of MEMS oscillator used in scenarios that require high output frequency accuracy.
  • OCMO is composed of MEMS resonator, temperature sensor, heater and feedback circuit.
  • the MEMS resonator generates a periodic clock signal through mechanical oscillation.
  • the temperature sensor captures the temperature of the MEMS resonator in real time, and then controls the power of the heater through a feedback circuit to stabilize the temperature of the resonator at a constant value, thus suppressing the frequency temperature of the resonator. drift.
  • the mainstream temperature measurement solution for OCMO is to use resonator modal frequency temperature measurement or resistance value as a temperature measurement indicator.
  • these temperature measurement indicators are susceptible to interference from ambient temperature fluctuations and are difficult to truly reflect MEMS.
  • the temperature of the resonator results in low temperature measurement accuracy.
  • Embodiments of the present application provide a temperature control device and related equipment, which can effectively suppress the impact of ambient temperature fluctuations on internal devices and improve temperature measurement accuracy.
  • inventions of the present application provide a temperature control device.
  • the temperature control device includes: a first fixed structure, a second fixed structure, two first support beams, two second support beams, a fixed frame and a target device.
  • the first fixed structure and the target device are located inside the fixed frame, and the second fixed structure is located outside the fixed frame.
  • the first fixed structure is connected to the fixed frame through two first support beams
  • the second fixed structure is connected to the fixed frame through two second support beams.
  • the target device is fixedly connected to the first fixed structure.
  • the temperature difference between the first connection position and the second connection position respectively connecting the two first support beams on the fixed frame is less than the first preset value.
  • a double-layer structure design is provided to isolate the target device from the external environment, thereby achieving better thermal isolation.
  • the fixed frame located on the outer layer is in direct contact with the external environment, and the temperature gradient distribution introduced by the external environment mainly exists on the fixed frame.
  • the fixed structure located on the inner layer is connected to the fixed frame through two support beams.
  • the fixed frame The temperature difference between the two positions on the frame where the two support beams are respectively connected is less than the first preset value. In the most preferred embodiment, the temperatures of the two positions are completely equal.
  • the fixed structure is connected to two isothermal positions on the fixed frame, so the fixed structure is heated more evenly, which can keep the fixed structure and the target components connected to it at a relatively balanced temperature, and reduce the temperature of the target device affected by the external environment.
  • the influence of fluctuations can improve the temperature measurement accuracy.
  • the third connection position and the fourth connection position on the fixed frame connect two second support beams respectively.
  • the fixed frame includes a first sub-area, a second sub-area, a third sub-area and a fourth sub-area.
  • the first sub-region is between the first connection position and the third connection position
  • the second sub-region is between the second connection position and the third connection position
  • the third sub-region is between the first connection position and the fourth connection position.
  • the fourth sub-region is located between the second connection position and the fourth connection position.
  • the ratio of the thermal resistance of the first sub-region to the thermal resistance of the third sub-region is the first ratio.
  • the ratio of the thermal resistance of the second sub-region to the thermal resistance of the fourth sub-region is the second ratio.
  • the first ratio is the second ratio.
  • the difference in the ratio is less than the second preset value. Meeting this condition ensures that the temperature difference between the first connection position and the second connection position is less than the first preset value.
  • the first ratio is required to be equal to the second ratio to ensure that the temperatures at the first connection position and the second connection position are completely equal.
  • a specific implementation method for determining the isothermal position on the fixed frame is provided, which further ensures that the target device is not affected by temperature fluctuations of the external environment.
  • the temperature control device further includes a temperature adjustment element.
  • the temperature adjustment element is used to adjust the temperature of the fixed frame, the first fixed structure and the target element.
  • the temperature is actively adjusted through a temperature adjustment element so that the target device can operate in a specified temperature environment, thereby facilitating the implementation of specific functions.
  • the target device is specifically a resonator, and the resonator can output a clock signal with a stable frequency through temperature control.
  • the temperature adjustment element is located on the second support beam, and a thermally conductive insulation layer is provided between the temperature adjustment element and the second support beam. And/or, the temperature adjustment element is located on the first support beam, and a thermally conductive insulation layer is provided between the temperature adjustment element and the first support beam.
  • a variety of design positions of the temperature adjustment elements are provided, which improves the flexibility of the solution.
  • a thermally conductive insulation layer is added to provide a downward heat dissipation channel, which increases the effective thermal conductivity, thus improving the heating temperature resolution.
  • the design of the multi-layer structure allows the heating resistor to be made very thin and the resistance value large while ensuring that the structural stiffness remains unchanged. This solution can achieve the same temperature rise under the same temperature. Reduce power consumption.
  • the temperature adjustment element is heated by loading a first voltage, the second voltage loaded on the first support beam and/or the second support beam is conducted to the target device, and the first voltage is electrically connected to the second voltage. isolation.
  • the thermally conductive insulating layer can realize heat conduction but is electrically isolated. Therefore, on the basis of ensuring the normal temperature adjustment function, the heating voltage loaded on the temperature adjustment element and the voltage loaded on the target device are compared. Separation can improve the heating voltage resolution to achieve higher heating temperature resolution without affecting the function of the target device.
  • the temperature control device further includes a temperature measuring element.
  • the temperature measuring element is located inside the fixed frame and is fixedly connected to the first fixed structure.
  • the temperature measuring element is used to detect the temperature of the target device.
  • the temperature of the target device can be detected through a temperature measuring element, so as to monitor the temperature change of the target device in real time.
  • the target device is a first resonator
  • the first resonator includes a clock operating mode and a temperature measurement operating mode.
  • the first resonator When the first resonator is in the clock operating mode and the temperature of the first resonator is within the target range, the first resonator outputs a clock signal with stable frequency.
  • the temperature measurement signal output by the first resonator is used to represent the temperature of the first resonator.
  • the first resonator can work in the clock working mode and the temperature measuring working mode at the same time. The temperature is fed back through the signal output by the temperature measuring working mode, and then the first resonance is caused by temperature control.
  • the temperature of the device is within the target range to output a clock signal with stable frequency through the clock operating mode.
  • the characteristics of the resonator itself are used to realize the temperature feedback and clock signal output, and there is no need to set up a temperature measurement component, and the practical effect is better.
  • the temperature control device further includes a second resonator, which is located inside the fixed frame and fixedly connected to the first fixed structure.
  • the first resonator is in the clock working mode
  • the second resonator is in the temperature measuring working mode, or the first resonator is in the temperature measuring working mode, and the second resonator is in the clock working mode.
  • two resonators can also be set up, and the two resonators can be in different working modes respectively. Through cooperation, the temperature feedback and the output of the clock signal can be realized, which enhances the scalability of this solution.
  • the type of the first resonator includes a micro-electro-mechanical systems (MEMS) resonator, a quartz resonator and a quartz MEMS resonator, which expands the application scenarios of this solution.
  • MEMS micro-electro-mechanical systems
  • the second support beam includes a connecting beam and a connecting frame.
  • the fixed frame is located inside the connecting frame and is connected to the connecting frame.
  • One end of the connecting beam is connected to the second fixed structure, and the other end of the connecting beam is connected to the connecting frame. connection, the temperature difference between the two connection positions on the connection frame and the fixed frame is less than the first preset value.
  • the connecting frame can be regarded as the outer layer structure
  • the fixed frame can be regarded as the middle layer structure
  • the fixed structure can be regarded as the inner layer structure, thus forming a three-layer insulation structure with better thermal insulation effect.
  • the first fixed structure is a frame structure, so that the stability of the structure is better.
  • the temperature control device further includes a substrate layer.
  • the second fixing structure is fixed on the substrate layer, and the fixing frame, the first fixing structure and the target device are suspended on the substrate layer.
  • a specific implementation method for processing and fixing the temperature control device is provided, which increases the practicality of this solution.
  • the temperature control device further includes a substrate layer and a base. A portion of each of the first fixing structure, the second fixing structure and the fixing frame is located on the substrate layer, the second fixing structure is fixed on the base, and the fixing frame, the first fixing structure and the target device are suspended on the base.
  • another specific implementation method for processing and fixing the temperature control device is provided, which expands the application scenarios of this solution.
  • inventions of the present application provide a temperature compensated oscillator.
  • the temperature compensated oscillator includes: a temperature compensation module and a temperature control device as described in any embodiment of the first aspect.
  • the target device in the temperature control device is a resonator.
  • the resonator is used to output the original clock signal to the temperature compensation module.
  • the temperature compensation module is used to obtain the temperature of the resonator and adjust the original clock signal according to the temperature to obtain a target clock signal with stable frequency.
  • the resonator is also used to output a temperature measurement signal to the temperature compensation module.
  • the temperature compensation module is specifically used to obtain the temperature of the resonator based on the temperature measurement signal.
  • the temperature control device includes a temperature measuring element.
  • the temperature measuring element is used to detect the temperature of the resonator.
  • the temperature compensation module is specifically used to obtain the temperature of the resonator through the temperature measuring element.
  • inventions of the present application provide a temperature-controlled oscillator.
  • the temperature-controlled oscillator includes: a controller and a temperature control device as described in any embodiment of the first aspect.
  • the target device in the temperature control device is a resonator
  • the temperature control device includes a temperature regulating element.
  • the controller is used to obtain the original temperature of the resonator and control the temperature adjustment element according to the original temperature to adjust the original temperature to the target temperature.
  • the first resonator When the first resonator is in the clock operating mode and the first resonator is at the target temperature, the first resonator outputs a clock signal with stable frequency.
  • the resonator is used to output a temperature measurement signal to the controller.
  • the controller is specifically used to obtain the original temperature of the resonator based on the temperature measurement signal.
  • the temperature control device includes a temperature measuring element, which is used to detect the original temperature of the resonator.
  • the controller is specifically used to obtain the original temperature of the resonator through the temperature measuring element.
  • a double-layer structure design is provided to isolate the target device from the external environment, thereby achieving better thermal isolation.
  • the fixed frame located on the outer layer is in direct contact with the external environment, and the temperature gradient distribution introduced by the external environment mainly exists on the fixed frame.
  • the fixed structure located on the inner layer is connected to the fixed frame through two support beams, and the temperature difference between the two positions on the fixed frame where the two support beams are respectively connected is less than the first preset value. That is to say, the fixed structure is connected to two isothermal positions on the fixed frame, so the fixed structure is heated more evenly, which can keep the fixed structure and the target components connected to it at a relatively balanced temperature, and reduce the temperature of the target device affected by the external environment. The influence of fluctuations can improve the temperature measurement accuracy.
  • Figure 1 is a first structural schematic diagram of a temperature control device in an embodiment of the present application
  • FIG. 2 is a schematic diagram of temperature distribution of the temperature control device in the embodiment of the present application.
  • Figure 3(a) is a second structural schematic diagram of the temperature control device in the embodiment of the present application.
  • Figure 3(b) is a third structural schematic diagram of the temperature control device in the embodiment of the present application.
  • FIG. 4 is a fourth structural schematic diagram of the temperature control device in the embodiment of the present application.
  • Figure 5 is a schematic diagram of simulation comparison of heating schemes using different materials
  • FIG. 6 is a fifth structural schematic diagram of the temperature control device in the embodiment of the present application.
  • Figure 7 is a schematic diagram of two working modes of the resonator in the embodiment of the present application.
  • Figure 8(a) is a schematic structural diagram of the sixth type of temperature control device in the embodiment of the present application.
  • Figure 8(b) is a seventh structural schematic diagram of the temperature control device in the embodiment of the present application.
  • Figure 8(c) is a schematic structural diagram of the eighth temperature control device in the embodiment of the present application.
  • Figure 8(d) is a ninth structural schematic diagram of the temperature control device in the embodiment of the present application.
  • Figure 9 is a schematic structural diagram of the tenth temperature control device in the embodiment of the present application.
  • Figure 10(a) is a schematic structural diagram of an eleventh type of temperature control device in the embodiment of the present application.
  • Figure 10(b) is a schematic structural diagram of the twelfth temperature control device in the embodiment of the present application.
  • Figure 10(c) is a thirteenth structural schematic diagram of the temperature control device in the embodiment of the present application.
  • Figure 10(d) is a schematic structural diagram of the fourteenth temperature control device in the embodiment of the present application.
  • Figure 11 is a schematic structural diagram of a temperature-controlled oscillator in an embodiment of the present application.
  • Figure 12 is a schematic structural diagram of a temperature compensated oscillator in an embodiment of the present application.
  • Embodiments of the present application provide a temperature control device and related equipment, which can effectively suppress the impact of ambient temperature fluctuations on internal devices and improve temperature measurement accuracy.
  • the terms "first”, “second”, etc. (if present) in the description and claims of this application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the data so used are interchangeable under appropriate circumstances so that the embodiments described herein can be used in addition to those described herein. Implementation in a sequence other than that shown or described.
  • FIG. 1 is a first structural schematic diagram of a temperature control device in an embodiment of the present application.
  • the temperature control device includes: a target device 10 , a fixed structure 20 , a fixed frame 30 , a fixed structure 40 , a support beam 50 and a support beam 60 .
  • the fixed frame 30 is a closed structure with a hollow center, and this application does not limit the specific shape of the fixed frame 30 .
  • the fixing structure 20 and the target device 10 are located inside the fixing frame 30 , and the fixing structure 40 is located outside the fixing frame 30 .
  • the fixed structure 20 is connected to the fixed frame 30 through two support beams 50 respectively, and the fixed structure 40 is connected to the fixed frame 30 through two support beams 60 respectively.
  • the target device 10 is fixedly connected to the fixed structure 20 .
  • the fixed structure 20 may be a frame structure as shown in FIG. 1 .
  • the fixed structure 20 may be composed of two independent anchor point structures, which is a non-closed structure.
  • the two anchor point structures of the fixed structure 20 are connected to two support beams 50 respectively.
  • the fixed structure 20 is shown as a frame structure as an example. Similar to the fixed structure 20 , this application does not limit the specific implementation of the fixed structure 40 .
  • the fixed structure 40 is shown as being composed of multiple anchor point structures.
  • this application does not limit the specific numbers of the support beams 50 and 60 . In some possible implementations, with two support beams as one set, multiple sets of support beams 50 and multiple sets of support beams 60 can also be provided. In addition, this application does not limit the specific implementation of the support beam 50 and the support beam 60 .
  • the support beams 50 and 60 may be straight beams or folded beams, or the like.
  • the target device 10 may be a resonator, a gyroscope, an accelerometer or a micromirror.
  • the following description mainly takes the target device 10 as a resonator as an example.
  • the types of resonators include but are not limited to MEMS resonators, quartz resonators, quartz MEMS resonators, etc.
  • the fixed frame 30 can be regarded as an outer structure, or simply referred to as an "outer frame".
  • the fixed structure 20 can be regarded as an inner structure. If the fixed structure 20 also adopts a frame design, the fixed structure 20 can be referred to as an "inner frame” for short. It should be understood that the fixed frame 30 is in direct contact with the external environment and will be affected by temperature fluctuations of the external environment. Heat transfer will occur between the fixed frame 30 and the fixed structure 20 through the support beam 50.
  • this application also needs to select two isothermal positions on the fixed frame 30 to connect the support beam 50, so that the fixed structure 20 and the target device 10 are heated more evenly, and further reduce the heat of the target device 10. The influence of temperature fluctuations in the external environment.
  • the fixing structure 40 is usually used as an anchor point to fix the entire temperature control device.
  • Other parts except the fixed structure 40 are in a suspended state and will not be in direct contact with external structures. Since the temperature fluctuation of the external structure may cause the temperatures of the two fixed structures 40 to be different, the fixed frame 30 connected to the two fixed structures 40 is in a state of uneven heating.
  • the fixture connected to the fixing frame 30 The structure 20 is heated evenly, so the two positions where the fixed frame 30 and the fixed structure 20 are connected should be isothermal positions.
  • FIG. 2 is a schematic diagram of temperature distribution of the temperature control device in the embodiment of the present application. It should be understood that the temperature distribution shown in Figure 2 is obtained under the condition that the ambient temperature gradient distribution introduces a certain temperature difference between the two fixed structures 40. For example, the temperature difference may be 0.1 degrees Celsius. As shown in the example of FIG. 2(a) , there is a temperature distribution with a maximum temperature difference of about 50mK on the fixed frame 30 and the target device 10 . As shown in the example of (b) of FIG. 2 , the target device 10 itself has a temperature distribution with a maximum temperature difference of approximately 2uk. It can be seen that the temperature gradient distribution introduced by the external environment mainly exists on the fixed frame 30, while the target device 10 maintains a relatively balanced temperature and is less affected by the external environment temperature.
  • connection position B is located at the center of one side of the rectangle
  • connection position D is located at the center of the other opposite side of the rectangle.
  • the connection position B and the connection position D are isothermal positions.
  • the connection position B and the connection position D can be translated upward or downward simultaneously, and the connection position B and the connection position D are still isothermal positions.
  • using the isothermal position shown in Figure 1 is more conducive to improving the stability of the structure.
  • connection position B in FIG. 1 as an example, the connection position B is located on one side of the fixed frame 30 and occupies a length of the fixed frame 30 , that is, the length of the connection position B.
  • the connection position B is located on one side of the fixed frame 30 and occupies a length of the fixed frame 30 , that is, the length of the connection position B.
  • the shorter the length of connection position B the smaller the temperature distribution range of connection position B, which is more conducive to ensuring a fixed structure 20 and the target device 10 is heated evenly.
  • the temperature distribution range of connection position B can be controlled to 1mk.
  • connection position B is shorter the length of the connection position B is, it is helpful to reduce the influence of the target device 10 from temperature fluctuations of the external environment, but if the length of the connection position B is too short, it will also be detrimental to the overall stability of the structure, so it can
  • the length of connection position B should be reasonably selected based on the two factors. The above description also applies to the connection position D which is isothermal to the connection position B.
  • the above-mentioned two isothermal positions do not necessarily require the temperatures to be completely equal.
  • the temperature difference between the two connection positions is less than the first preset value, they can be regarded as isothermal positions.
  • Each of the two connection positions has a certain temperature distribution, so the temperature difference between the two connection positions may specifically be the temperature difference between the average temperatures of the two connection positions.
  • the first preset value can be set with reference to the temperature distribution range of the connection location B and the connection location D.
  • the temperature distribution ranges of connection positions B and D are both 1mK, but the temperatures of the two connection positions are not equal. If the temperature difference between the two connection positions is less than 1mK, it can be regarded as an isothermal position. In the most preferred embodiment, it is required that the temperatures of the two isothermal locations are exactly equal.
  • the fixed frame 30 has a total of four connection positions for connecting the support beam 50 and the support beam 60 .
  • the fixed frame 30 can be divided into four sub-regions using these four connection positions as dividing points. If the thermal resistance of each of these four areas meets the specified conditions, the two positions on the fixed frame 30 connecting the support beam 50 can be regarded as isothermal positions, which is equivalent to providing a specific implementation method for determining the isothermal position.
  • the four connection positions on the fixed frame 30 are respectively recorded as: connection position A, connection position B, connection position C and connection position D
  • the four sub-regions on the fixed frame 30 are respectively recorded as: Sub-region a, sub-region b, sub-region c and sub-region d.
  • sub-region a is located between connection position A and connection position B
  • sub-region b is located between connection position B and connection position C
  • sub-region c is located between connection position C and connection position D
  • sub-region d is located at the connection position Between D and connection position A.
  • the thermal resistance of sub-area a be R1
  • the thermal resistance of sub-area b be R3
  • the thermal resistance of sub-area c be R4
  • the thermal resistance of sub-area d be R2
  • the difference between R1/R3 and R2/R4 is less than the second preset value.
  • typical for R1/R3 and R2/R4 The range is 1/5 to 5.
  • connection position B and connection position D can be regarded as isothermal positions.
  • FIG. 3(a) is a second structural schematic diagram of the temperature control device in the embodiment of the present application.
  • the temperature control device may also include a temperature adjustment element 70.
  • the temperature adjustment element can adjust the temperature of the fixed frame 30, the fixed structure 20 and the target element 10, thereby achieving a temperature control effect.
  • this application does not limit the specific type of the temperature adjustment element 70.
  • the following mainly introduces the temperature adjustment element 70 being a heating resistor as an example.
  • the heating resistor may be disposed on the support beam 60 as shown in FIG. 3(a) .
  • the heating resistor heats the support beam 60 to achieve temperature regulation of the fixed frame 30 , the fixed structure 20 and the target element 10 .
  • FIG 3(b) is a third structural schematic diagram of the temperature control device in the embodiment of the present application.
  • the temperature adjustment element 70 can also be disposed on the support beam 50.
  • the temperature adjustment element 70 heats the support beam 50 to achieve temperature adjustment of the fixed frame 30, the fixed structure 20 and the target element 10. .
  • FIG 4 is a fourth structural schematic diagram of the temperature control device in the embodiment of the present application.
  • Figure 4 shows a partial longitudinal section of the temperature control device.
  • the temperature adjustment element 70 is a heating resistor and the heating resistor is disposed on the support beam 60.
  • the heating resistor is provided with electrodes. 701, the electrode 701 is heated by applying a voltage to control the heating resistor.
  • the fixed structure 40 is provided with an electrode 401, and the voltage loaded on the electrode 401 can be conducted to the resonator.
  • a thermally conductive insulating layer 80 is provided between the heating resistor and the support beam 60, and the thermally conductive insulating layer 80 can realize heat conduction. But it is electrically isolated. Therefore, on the basis of ensuring the normal temperature regulation function, the heating voltage loaded on the heating resistor and the bias voltage loaded on the resonator are separated, which can improve the heating voltage resolution and achieve higher heating temperature resolution. And does not affect the function of the resonator.
  • the above-mentioned support beam 60, temperature adjustment element 70 and thermally conductive insulation layer 80 constitute a three-layer structure.
  • the support beam 60 is made of single crystal silicon
  • the thermally conductive insulating layer 80 is made of aluminum nitride AlN
  • the temperature adjustment element 70 is made of semiconductor material.
  • the semiconductor materials include but are not limited to amorphous silicon, polycrystalline silicon, silicon germanium, etc.
  • U is the heating voltage
  • dU is the heating voltage resolution.
  • This application adds a thermally conductive insulation layer to provide a downward heat dissipation channel, that is, to increase the effective thermal conductivity coefficient ⁇ eff , thereby improving the heating temperature resolution.
  • the multi-layer structure design allows the heating resistor to be made very thin and the resistance value large while maintaining the structural stiffness. Therefore, according to the power consumption formula It can be seen that this solution can reduce power consumption under the same temperature rise.
  • the advantage of the three-layer structure material provided by this preferred embodiment is that it adds a downward heat dissipation channel for the heating resistor and improves the effective heat dissipation coefficient. Moreover, the resistance of heating resistors made of semiconductor materials is larger, which can effectively reduce power consumption. Compared with the solution where the three-layer structure uses single crystal silicon and the solution where the heating resistor uses metal materials, this implementation has significant beneficial effects, which will be further explained below with a simulation comparison chart.
  • FIG. 5 is a schematic diagram of the simulation comparison of heating schemes using different materials.
  • Scheme 1 is the heating scheme provided by the above-mentioned preferred embodiment
  • Scheme 2 is a scheme in which the heating resistor is made of metal material
  • Scheme 3 is a scheme in which the three-layer structure is made of single crystal silicon.
  • the temperature rise K of scheme 2 is 1417K/V 2
  • the temperature rise K of scheme 3 is 86.7K/V 2
  • the temperature rise K of scheme 1 is 1.9K/V 2 . It should be understood that the smaller the slope in Figure 5, the higher the temperature adjustment accuracy.
  • the heating temperature resolution of Scheme 1 is improved by approximately 27 times compared with Scheme 2, and is improved by approximately 7 times compared with Scheme 3.
  • the power consumption of Solution 1 provided by this application is approximately 800 times more optimized than Solution 2, and approximately 68 times more optimized than Solution 3.
  • the temperature adjustment element 70 may also be made of conductive material.
  • FIG. 6 is a fifth structural schematic diagram of the temperature control device in the embodiment of the present application.
  • the temperature control device further includes a temperature measuring element 90 .
  • the temperature measuring element 90 is fixed inside the fixed frame 30 and connected to the fixed structure 20 .
  • the temperature measuring element 90 is used to detect the temperature of the target element 10 .
  • the target device 10 and the temperature measuring element 90 can maintain a relatively balanced temperature, are less affected by the external environment temperature, and have higher temperature measurement accuracy.
  • this application does not limit the specific type of the temperature measuring element 90.
  • the temperature measuring element 90 can be a temperature measuring resistor, and the temperature can be calibrated by the resistance value by utilizing the sensitivity of the resistance value to temperature.
  • the temperature measurement working mode of the resonator itself can also be used to implement temperature measurement without configuring a separate temperature measurement component.
  • the resonator in addition to the temperature measurement working mode, also has a clock working mode.
  • the temperature measurement working mode includes but is not limited to the Square extensional (SE) working mode
  • the clock working mode includes but is not limited to the Lame working mode.
  • SE Square extensional
  • the resonator will output signals of different frequencies in different operating modes.
  • the resonator can operate in any one of the operating modes according to SE requirements, or the resonator can also operate in two operating modes at the same time. The two operating modes of the resonator are introduced in detail below.
  • Figure 7 is a schematic diagram of two working modes of the resonator in the embodiment of the present application.
  • the frequency of the resonator output signal in the clock operating mode has an inflection point relative to the temperature change, and the frequency near the inflection point hardly changes with the temperature change. Therefore, the resonator can provide stable clock signal output in the temperature range near the inflection point.
  • the frequency of the output signal of the resonator in the temperature measurement operating mode changes with the change of temperature, and there is no inflection point. Therefore, the temperature can be calibrated by the frequency of the output signal in the temperature measurement working mode.
  • the corresponding relationship between frequency and temperature can be configured in advance, and then the current temperature of the resonator can be determined based on the frequency of the resonator output signal in the temperature measurement operating mode and the corresponding relationship.
  • the resonator can output a clock signal with a stable frequency based on the two operating modes of the resonator and combined with a temperature adjustment element.
  • the temperature is first calibrated by the frequency of the output signal in the temperature measurement working mode, and then the temperature adjustment element is controlled according to the detected temperature to adjust the temperature of the resonator to control the temperature of the resonator within the target range, so that the temperature of the resonator can be controlled.
  • the target range is the temperature range near the inflection point in the clock operating mode. The target range is subject to actual application and is not limited here.
  • the above-mentioned temperature control device may also include two resonators.
  • the two resonators work in different operating modes respectively. The same effect can also be achieved through the cooperation of the two resonators, extending the Application scenarios of this solution.
  • Several specific implementations using two resonators are provided below.
  • Figure 8(a) is a schematic structural diagram of the sixth type of temperature control device in the embodiment of the present application. As shown in FIG. 8(a) , both the resonator 10a and the resonator 10b are fixedly connected to the fixed structure 20 . As an example, the resonator 10a is in the clock operating mode, and the resonator 10b is in the temperature measurement operating mode. As another example, the resonator 10a is in the thermometric operating mode, resonating Device 10b is in clock working mode.
  • Figure 8(b) is a seventh structural schematic diagram of the temperature control device in the embodiment of the present application.
  • the fixed structure 20 includes a fixed structure 201 and a fixed structure 202.
  • the resonator 10a is fixedly connected to the fixed structure 201
  • the resonator 10b is fixedly connected to the fixed structure 202.
  • Fixed connection By comparing the structures shown in Figure 8(a) and Figure 8(b), it can be seen that the structure shown in Figure 8(a) integrates the fixed structure 201 and the fixed structure 202 into a fixed structure 20, which can enhance the resonator 10a and resonance.
  • the thermal coupling between the devices 10b helps improve the temperature measurement accuracy.
  • the structure shown in Figure 8(b) adds a connecting rod between the fixed structure 201 and the fixed structure 202. Compared with the structure shown in Figure 8(a), the structure shown in Figure 8(b) improves the structural rigidity. , enhancing the reliability of the overall structure.
  • Figure 8(c) is a schematic structural diagram of the eighth temperature control device in the embodiment of the present application.
  • the resonator 10a and the resonator 10b can be at any angle and do not have to be placed in parallel, which expands the application of dual resonators. Scenes.
  • the resonator 10a works in the clock working mode of the 100 crystal direction
  • the resonator 10b works in the temperature measurement working mode of the 110 crystal direction.
  • the temperature measurement working mode eigenfrequency has a significant relationship with the temperature. Very sensitive and supports high-precision temperature measurement.
  • Figure 8(d) is a ninth structural schematic diagram of the temperature control device in the embodiment of the present application.
  • the resonator 10a and the resonator 10b can also have different shapes to adapt to different operating modes.
  • the resonator 10a has a square structure
  • the resonator 10b has a rectangular structure.
  • the resonator 10a can be applied in Lame operating mode or SE operating mode.
  • the resonator 10b can be applied in a length extensional (LE) operating mode.
  • L length extensional
  • the above-mentioned temperature control device can be further expanded to more layer structures based on the above-mentioned double-layer structure.
  • the temperature uniformity on the target component 10 can be better maintained. sex. The following takes the expansion to a three-layer structure as an example.
  • FIG. 9 is a schematic structural diagram of a tenth type of temperature control device in the embodiment of the present application.
  • the support beam 60 includes a connecting beam 601 and a connecting frame 602 .
  • the fixed frame 30 is located inside the connecting frame 602 and connected with the connecting frame 602 .
  • One end of the connecting beam 601 is connected to the fixed structure 40
  • the other end of the connecting beam 601 is connected to the connecting frame 602 .
  • the connecting frame 602 can be regarded as the outer layer structure
  • the fixed frame 30 can be regarded as the middle layer structure
  • the fixed structure 20 can be regarded as the inner layer structure, thereby forming a three-layer insulation structure.
  • connection locations between each adjacent two layer structures in the three-layer structure are isothermal.
  • the two locations where the fixed frame 30 is connected to the fixed structure 20 are isothermal, and the two locations where the connecting frame 602 is connected to the fixed frame 30 are also isothermal.
  • the structure shown in Figure 9 it can also be extended to more layer structures in a similar manner, and the specific methods will not be described again here.
  • both the MEMS resonator and the quartz MEMS resonator can be directly applied in any of the above embodiments.
  • the MEMS resonator and the quartz MEMS resonator can usually be connected to the fixed structure 20 through connecting rods.
  • the quartz resonator due to different manufacturing processes, the quartz resonator is usually bonded to the fixed structure 20. Apart from this, other features are similar to the above embodiments and will not be described again here.
  • FIG. 10(a) is a schematic structural diagram of an eleventh type of temperature control device in the embodiment of the present application.
  • the quartz resonator 10 is bonded to the fixed structure 20 .
  • Figure 10(b) is a twelfth structural schematic diagram of the temperature control device in the embodiment of the present application.
  • the temperature control device includes a quartz resonator 10a and a quartz resonator 10b. Both the quartz resonator 10a and the quartz resonator 10b are bonded to the fixed structure 20.
  • Figure 10(c) is a thirteenth structural schematic diagram of the temperature control device in the embodiment of the present application.
  • the temperature control device includes a quartz resonator 10a and The MEMS resonator 10b and the quartz resonator 10a are bonded to the fixed structure 20, and the MEMS resonator 10b is connected to the fixed structure 20 through connecting rods.
  • This solution takes advantage of both the small frequency temperature drift of the quartz crystal resonator 10a and the large frequency temperature drift of the MEMS resonator 10b.
  • the quartz crystal resonator 10a as a clock
  • the frequency temperature drift is reduced, and the MEMS resonator 10b is used as a clock.
  • the temperature measurement sensor improves the temperature measurement sensitivity, thereby improving the frequency and temperature stability of the output clock signal.
  • FIG. 10(d) is a fourteenth structural schematic diagram of the temperature control device in the embodiment of the present application. As shown in FIG. 10(d) , the temperature control device also includes a temperature measuring element 90 , which can be used to detect the temperature of the quartz resonator 10 .
  • the above temperature control device can be formed by processing a single crystal silicon on insulator (SOI).
  • SOI silicon on insulator
  • the temperature control device includes a device layer, an insulating layer and a substrate layer.
  • the insulating layer is located between the device layer and the substrate. between the bottom floors.
  • the materials of the device layer and the substrate layer include but are not limited to silicon, polysilicon and silicon carbide, and the materials of the insulating layer include but are not limited to silicon dioxide and silicon nitride.
  • the specific processing methods will also have some differences, which are introduced below.
  • the MEMS resonator, the fixing structure 20, the fixing frame 30 and the fixing structure 40 are all located on the device layer, and the fixing structure 40 is fixed on the substrate layer.
  • a hollow area can be designed on the substrate layer, and the MEMS resonator, the fixed structure 20 and the fixed frame 30 can all be suspended on the hollow area. It should be understood that this example is mainly applicable to the scenario of MEMS resonators.
  • a quartz resonator As another example, if a quartz resonator is used, a portion of each of the fixed structure 20 , the fixed frame 30 and the fixed structure 40 is located on the substrate layer. That is to say, different from the above example using a MEMS resonator, in this example a substrate layer is also needed to make the fixed structure 20 , the fixed frame 30 and the fixed structure 40 . Furthermore, the fixed structure 40 is used to be fixed on the base, so that the quartz resonator, the fixed structure 20 and the fixed frame 30 are in a suspended state. It should be understood that in some possible scenarios, the fixing structure 40 can be fixed on the package shell. It should be understood that the specific design manner of the device layer is not limited in this example, and this example can be applied to scenarios of MEMS resonators and quartz resonators.
  • this application provides a double-layer structure design for isolating the target device from the external environment, which plays a better thermal isolation role.
  • the fixed frame located on the outer layer is in direct contact with the external environment, and the temperature gradient distribution introduced by the external environment mainly exists on the fixed frame.
  • the fixed structure located on the inner layer is connected to the fixed frame through two support beams, and the temperature difference between the two positions on the fixed frame where the two support beams are respectively connected is less than the first preset value.
  • the fixed structure is connected to two isothermal positions on the fixed frame, so the fixed structure is heated more evenly, which can keep the fixed structure and the target components connected to it at a relatively balanced temperature, and reduce the temperature of the target device affected by the external environment.
  • the influence of fluctuations can improve the temperature measurement accuracy.
  • the temperature control device provided by this application has been introduced above. If the target device uses a resonator, the temperature control device can also be applied to the oscillator scenario.
  • oscillators include temperature-controlled oscillators and temperature-compensated oscillators.
  • the temperature-controlled oscillator can be a temperature-controlled MEMS oscillator (OCMO) using a MEMS resonator, or it can be a temperature-controlled quartz oscillator (OCXO) using a quartz resonator. ).
  • the temperature compensated oscillator can be a temperature compensated MEMS oscillator (TCMO) using a MEMS resonator, or a temperature compensated quartz oscillator (TCXO) using a quartz resonator.
  • TCMO temperature compensated MEMS oscillator
  • TCXO temperature compensated quartz oscillator
  • the temperature-controlled oscillator provides a frequency-stable clock signal through active temperature regulation.
  • the temperature compensated oscillator is a clock signal that achieves frequency stability by
  • FIG 11 is a schematic structural diagram of a temperature-controlled oscillator in an embodiment of the present application.
  • the temperature-controlled oscillator includes a controller and a temperature control device.
  • the target element in the temperature control device is a resonator, and the temperature control device includes a temperature adjustment element.
  • the controller can obtain the original temperature of the resonator, and the original temperature can be understood as the currently detected resonator temperature.
  • the controller controls the temperature adjustment element according to the original temperature to adjust the original temperature to the target temperature, so that the resonator can output a clock signal with stable frequency in the clock operating mode.
  • the target temperature is located in the temperature range near the inflection point, and the frequency near the inflection point hardly changes with temperature changes, ensuring that the resonator can output a clock signal with stable frequency.
  • the resonator outputs a temperature measurement signal to the controller in the temperature measurement working mode, and the controller specifically determines the original temperature of the resonator based on the temperature measurement signal.
  • the frequency of the output signal of the resonator in the temperature measurement operating mode changes with the change of temperature, and there is no inflection point. Therefore, the temperature can be calibrated by the frequency of the output signal in the temperature measurement working mode.
  • the temperature control device may also include a temperature measuring element (no drawings are provided here), through which the original temperature of the resonator is detected and fed back to the controller.
  • FIG. 12 is a schematic structural diagram of a temperature compensated oscillator in an embodiment of the present application.
  • the temperature compensated oscillator includes a temperature compensation module and a temperature control device.
  • the target component in the temperature control device is a resonator.
  • the temperature control device in this embodiment does not need to be provided with a temperature adjustment element.
  • the resonator is used to output the original clock signal to the temperature compensation module.
  • the temperature compensation module obtains the temperature of the resonator and adjusts the original clock signal according to the temperature to obtain a target clock signal with stable frequency.
  • the resonator outputs a temperature measurement signal to the temperature compensation module in the temperature measurement working mode, and the temperature compensation module specifically determines the temperature of the resonator based on the temperature measurement signal.
  • the frequency of the output signal of the resonator in the temperature measurement operating mode changes with the change of temperature, and there is no inflection point. Therefore, the temperature can be calibrated by the frequency of the output signal in the temperature measurement working mode.
  • the temperature control device may also include a temperature measuring element (no drawings are provided here), through which the temperature of the resonator is detected and fed back to the temperature compensation module.
  • the double-layer designed temperature control device ensures that the resonator is in a state of high temperature uniformity. Therefore, the temperature difference felt between the temperature measurement working mode of the resonator and the clock working mode is small, so The temperature measurement working mode can measure the temperature of the clock working mode with high precision, which helps the resonator to output a clock signal with a more stable frequency.

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Abstract

本申请实施例公开了一种温度控制装置及相关设备，能够有效抑制环境温度波动对内部器件的影响，可以提高测温精度。温度控制装置包括：第一固定结构、第二固定结构、两个第一支撑梁、两个第二支撑梁、固定框架和目标器件。第一固定结构和目标器件位于固定框架内侧，第二固定结构位于固定框架外侧。第一固定结构分别通过两个第一支撑梁与固定框架连接，第二固定结构分别通过两个第二支撑梁与固定框架连接，目标器件与第一固定结构固定连接。固定框架上分别连接两个第一支撑梁的第一连接位置和第二连接位置的温度差值小于第一预设值。

Description

一种温度控制装置及相关设备
本申请要求于2022年7月30日提交中国国家知识产权局、申请号为202210912613.7、申请名称为“一种温度控制装置及相关设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及控温结构领域，尤其涉及一种温度控制装置及相关设备。
背景技术
微机电系统(Micro-electro-mechanical Systems,MEMS)器件是基于半导体微加工工艺制造出来的具有可动机械结构、能实现机械运动和电信号相互转换的一类微型器件，具有体积小、易集成、功耗低，灵敏度高和价格低等优点。MEMS器件被广泛运用于传感器、无线通信和智能系统等领域，比如MEMS陀螺仪、MEMS加速度计、MEMS微镜以及MEMS振荡器。其中，MEMS振荡器作为一种新型时钟器件，正在手机、汽车以及无线通信等各领域逐步地替代传统的石英振荡器。
温控MEMS振荡器(Oven-controlled MEMS oscillator，OCMO)是用于对输出频率精度要求很高的场景的一类MEMS振荡器。OCMO由MEMS谐振器、温度传感器、加热器以及反馈电路组成。MEMS谐振器通过机械振荡产生周期性时钟信号，温度传感器实时捕捉MEMS谐振器的温度，后通过反馈电路控制加热器的功率来将谐振器的温度稳定在恒定值上，从而抑制谐振器的频率温漂。
当前，OCMO的主流测温方案是使用谐振器模态频率测温或者电阻值作为测温指标测温，但在现有的方案中这些测温指标易受环境温度波动的干扰，难以真实反映MEMS谐振器的温度，导致测温精度低。
发明内容
本申请实施例提供了一种温度控制装置及相关设备，能够有效抑制环境温度波动对内部器件的影响，可以提高测温精度。
第一方面，本申请实施例提供了一种温度控制装置。该温度控制装置包括：第一固定结构、第二固定结构、两个第一支撑梁、两个第二支撑梁、固定框架和目标器件。其中，第一固定结构和目标器件位于固定框架内侧，第二固定结构位于固定框架外侧。第一固定结构分别通过两个第一支撑梁与固定框架连接，第二固定结构分别通过两个第二支撑梁与固定框架连接。目标器件与第一固定结构固定连接。固定框架上分别连接两个第一支撑梁的第一连接位置和第二连接位置的温度差值小于第一预设值。
在该实施方式中，提供了一种双层结构设计用于隔离目标器件与外界环境，起到了更好地热隔离作用。其中，位于外层的固定框架直接与外界环境接触，外界环境引入的温度梯度分布主要存在于固定框架上。位于内层的固定结构通过两个支撑梁与固定框架连接，固定框 架上分别连接两个支撑梁的两个位置之间温差小于第一预设值，在最优选的实施方式中两个位置的温度完全相等。也就是说，固定结构与固定框架上的两个等温位置连接，因此固定结构的受热更为均匀，可以使得固定结构以及与其连接的目标元件保持相对均衡的温度，减小目标器件受外界环境温度波动的影响，可以提高测温精度。
在一些可能的实施方式中，固定框架上的第三连接位置和第四连接位置分别连接两个第二支撑梁。固定框架包括第一子区域、第二子区域、第三子区域和第四子区域。第一子区域位于第一连接位置与第三连接位置之间，第二子区域位于第二连接位置与第三连接位置之间，第三子区域位于第一连接位置与第四连接位置之间，第四子区域位于第二连接位置与第四连接位置之间。第一子区域的热阻与第三子区域的热阻的比值为第一比值，第二子区域的热阻与第四子区域的热阻的比值为第二比值，第一比值与第二比值的差值小于第二预设值，满足该条件即可保证第一连接位置与第二连接位置的温度差值小于第一预设值。在最优选的实施方式中，要求第一比值等于第二比值，以保证第一连接位置和第二连接位置的温度完全相等。在该实施方式中，提供了一种确定固定框架上等温位置的具体实现方式，进一步保证了目标器件不受外界环境温度波动的影响。
在一些可能的实施方式中，温度控制装置还包括温度调节元件。温度调节元件用于调节固定框架、第一固定结构和目标元件的温度。在该实施方式中，通过温度调节元件主动调节温度，以使得目标器件可以工作在指定的温度环境中，从而便于实现特定的功能。例如，目标器件具体是谐振器，通过控温可以让谐振器输出频率稳定的时钟信号。
在一些可能的实施方式中，温度调节元件位于第二支撑梁上，且温度调节元件与第二支撑梁之间设置有导热绝缘层。和/或，温度调节元件位于第一支撑梁上，且温度调节元件与第一支撑梁之间设置有导热绝缘层。在该实施方式中，提供了多种温度调节元件的设计位置，提高了本方案的灵活性。并且，增加了导热绝缘层，提供了向下的散热渠道，也即增加了有效导热系数，从而提升了加热温度分辨率。同时，以温度调节元件是加热电阻为例，多层结构的设计允许在保证结构刚度不变的情况下将加热电阻做的很薄，阻值做得很大，该方案在同等温升下能减小功耗。
在一些可能的实施方式中，温度调节元件上通过加载第一电压进行加热，第一支撑梁和/或第二支撑梁上加载的第二电压传导至目标器件，第一电压与第二电压电隔离。在该实施方式中，导热绝缘层可以实现热传导但却是电隔离的，因此，在保证了温度调节功能正常的基础上，对温度调节元件上加载的加热电压和目标器件上加载的电压进行了分离，可以提升加热电压分辨率从而实现更高的加热温度分辨率，且不影响目标器件的功能。
在一些可能的实施方式中，温度控制装置还包括测温元件，测温元件位于固定框架内侧且与第一固定结构固定连接，测温元件用于检测目标器件的温度。在该实施方式中，可以通过测温元件来检测目标器件的温度，以便于实时监控目标器件的温度变化。
在一些可能的实施方式中，目标器件为第一谐振器，第一谐振器包括时钟工作模态和测温工作模态。当第一谐振器处于时钟工作模态且第一谐振器的温度处于目标范围时，第一谐振器输出频率稳定的时钟信号。当第一谐振器处于测温工作模态时，第一谐振器输出的测温信号用于表示第一谐振器的温度。在该实施方式中，第一谐振器可以同时工作在时钟工作模态和测温工作模态，通过测温工作模态输出的信号来反馈温度，进而通过控温使得第一谐振 器的温度处于目标范围，以通过时钟工作模态输出频率稳定的时钟信号。利用了谐振器自身的特性实现了温度反馈和时钟信号的输出，并且无需设置测温元件，实用效果更好。
在一些可能的实施方式中，温度控制装置还包括第二谐振器，第二谐振器位于固定框架内侧且与第一固定结构固定连接。第一谐振器处于时钟工作模态，第二谐振器处于测温工作模态，或者，第一谐振器处于测温工作模态，第二谐振器处于时钟工作模态。在该实施方式中，也可以设置两个谐振器，并让两个谐振器分别处于不同的工作模态，通过配合实现温度反馈和时钟信号的输出，增强了本方案的扩展性。
在一些可能的实施方式中，第一谐振器的类型包括微机电系统(Micro-electro-mechanical Systems,MEMS)谐振器、石英谐振器和石英MEMS谐振器，扩展了本方案的应用场景。
在一些可能的实施方式中，第二支撑梁包括连接梁和连接框架，固定框架位于连接框架内侧且与连接框架连接，连接梁的一端与第二固定结构连接，连接梁的另一端与连接框架连接，连接框架上与固定框架连接的两个连接位置的温度差值小于第一预设值。在该实施方式中，连接框架可以视为外层结构，固定框架可以视为中间层结构，固定结构可以视为内层结构，从而形成了一种三层隔温结构，隔热效果更好。
在一些可能的实施方式中，第一固定结构为框架结构，使得结构的稳定性更好。
在一些可能的实施方式中，温度控制装置还包括衬底层。第二固定结构固定在衬底层上，固定框架、第一固定结构和目标器件悬挂在衬底层上。在该实施方式中，提供了一种对温度控制装置进行加工和固定的具体实现方式，增加了本方案的实用性。
在一些可能的实施方式中，温度控制装置还包括衬底层和底座。第一固定结构、第二固定结构和固定框架各自的一部分结构位于衬底层，第二固定结构固定在底座上，固定框架、第一固定结构和目标器件悬挂在底座上。在该实施方式中，提供了另一种对温度控制装置进行加工和固定的具体实现方式，扩展了本方案的应用场景。
第二方面，本申请实施例提供了一种温补振荡器。该温补振荡器包括：温度补偿模块和如上述第一方面任一实施方式介绍的温度控制装置。其中，温度控制装置中的目标器件为谐振器。具体地，谐振器用于向温度补偿模块输出原始时钟信号。温度补偿模块用于获取谐振器的温度，并根据温度对原始时钟信号进行调节以得到频率稳定的目标时钟信号。
在一些可能的实施方式中，谐振器还用于向温度补偿模块输出测温信号。温度补偿模块具体用于根据测温信号获取谐振器的温度。
在一些可能的实施方式中，温度控制装置包括测温元件。测温元件用于检测谐振器的温度。温度补偿模块具体用于通过测温元件获取谐振器的温度。
第三方面，本申请实施例提供了一种温控振荡器。该温控振荡器包括：控制器和如上述第一方面任一实施方式介绍的温度控制装置。其中，温度控制装置中的目标器件为谐振器，温度控制装置包括温度调节元件。具体地，控制器用于获取谐振器的原始温度，并根据原始温度控制温度调节元件以将原始温度调节到目标温度。当第一谐振器处于时钟工作模态且第一谐振器处于目标温度时，第一谐振器输出频率稳定的时钟信号。
在一些可能的实施方式中，谐振器用于向控制器输出测温信号。控制器具体用于根据测温信号获取谐振器的原始温度。
在一些可能的实施方式中，温度控制装置包括测温元件，测温元件用于检测谐振器的原始温度。控制器具体用于通过测温元件获取谐振器的原始温度。
本申请实施例中，提供了一种双层结构设计用于隔离目标器件与外界环境，起到了更好地热隔离作用。其中，位于外层的固定框架直接与外界环境接触，外界环境引入的温度梯度分布主要存在于固定框架上。位于内层的固定结构通过两个支撑梁与固定框架连接，固定框架上分别连接两个支撑梁的两个位置之间温差小于第一预设值。也就是说，固定结构与固定框架上的两个等温位置连接，因此固定结构的受热更为均匀，可以使得固定结构以及与其连接的目标元件保持相对均衡的温度，减小目标器件受外界环境温度波动的影响，可以提高测温精度。
附图说明
图1为本申请实施例中温度控制装置的第一种结构示意图；
图2为本申请实施例中温度控制装置的一种温度分布示意图；
图3(a)为本申请实施例中温度控制装置的第二种结构示意图；
图3(b)为本申请实施例中温度控制装置的第三种结构示意图；
图4为本申请实施例中温度控制装置的第四种结构示意图；
图5为采用不同材料的加热方案的仿真对比示意图；
图6为本申请实施例中温度控制装置的第五种结构示意图；
图7为本申请实施例中谐振器的两种工作模态示意图；
图8(a)为本申请实施例中温度控制装置的第六种结构示意图；
图8(b)为本申请实施例中温度控制装置的第七种结构示意图；
图8(c)为本申请实施例中温度控制装置的第八种结构示意图；
图8(d)为本申请实施例中温度控制装置的第九种结构示意图；
图9为本申请实施例中温度控制装置的第十种结构示意图；
图10(a)为本申请实施例中温度控制装置的第十一种结构示意图；
图10(b)为本申请实施例中温度控制装置的第十二种结构示意图；
图10(c)为本申请实施例中温度控制装置的第十三种结构示意图；
图10(d)为本申请实施例中温度控制装置的第十四种结构示意图；
图11为本申请实施例中温控振荡器的一种结构示意图；
图12为本申请实施例中温补振荡器的一种结构示意图。
具体实施方式
本申请实施例提供了一种温度控制装置及相关设备，能够有效抑制环境温度波动对内部器件的影响，可以提高测温精度。本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等(如果存在)是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便这里描述的实施例能够以除了在这里 图示或描述的内容以外的顺序实施。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。
图1为本申请实施例中温度控制装置的第一种结构示意图。如图1所示，温度控制装置包括：目标器件10、固定结构20、固定框架30、固定结构40、支撑梁50和支撑梁60。应理解，固定框架30是中间镂空的封闭式结构，本申请不限定固定框架30的具体形状。固定结构20和目标器件10位于固定框架30内侧，固定结构40位于固定框架30外侧。固定结构20分别通过两个支撑梁50与固定框架30连接，固定结构40分别通过两个支撑梁60与固定框架30连接。目标器件10与固定结构20固定连接。
需要说明的是，本申请不限定固定结构20的具体实现方式。例如，固定结构20可以是如图1所示的框架结构。又例如，固定结构20可以由两个独立的锚点结构组成，是一种非封闭式的结构，固定结构20的两个锚点结构分别连接两个支撑梁50。为了便于示意，在包括图1的所有附图中均以固定结构20是框架结构为例进行展示。与固定结构20类似，本申请也不限定固定结构40的具体实现方式。为了便于示意，在包括图1的所有附图中均以固定结构40由多个锚点结构组成为例进行展示。
还需要说明的是，本申请不限定支撑梁50和支撑梁60的具体数量。在一些可能的实施方式中，以两个支撑梁为一组，还可以设置多组支撑梁50和多组支撑梁60。另外，本申请也不限定支撑梁50和支撑梁60的具体实现方式。例如，支撑梁50和支撑梁60可以是直梁或折叠梁等。
还需要说明的是，本申请不限定目标器件10的具体类似。例如，目标器件10具体可以是谐振器、陀螺仪、加速度计或微镜等。为了便于介绍，下面主要以目标器件10是谐振器为例进行说明。其中，谐振器的类型包括但不限于MEMS谐振器、石英谐振器和石英MEMS谐振器等。
本申请中，为了尽量避免目标器件10受外界环境温度波动的影响，设计了一种双层结构将目标器件10包围起来，以起到热隔离的作用。其中，固定框架30可以视为外层结构，也可以简称为“外框”。固定结构20可以视为内层结构，如果固定结构20也采用框架设计，固定结构20可以简称为“内框”。应理解，固定框架30直接与外界环境接触，会受到外界环境温度波动的影响，固定框架30与固定结构20之间会通过支撑梁50进行热传递，如果两个支撑梁50的温度差异较大，也会影响固定结构20以及与之连接的目标器件10的受热均匀性。因此，在双层结构设计的基础上，本申请还需要选取固定框架30上两个等温位置来连接支撑梁50，以使得固定结构20和目标器件10受热更均匀，进一步减小目标器件10受外界环境温度波动的影响。
需要说明的是，在实际应用中，通常是将固定结构40作为锚点对温度控制装置的整体进行固定。以图1为例，有两个作为锚点的固定结构40直接与外部结构接触。除固定结构40之外的其他部分处于悬挂状态，不会与外部结构直接接触。由于外部结构的温度波动可能会导致这两个固定结构40的温度不同，那么，与两个固定结构40连接的固定框架30处于受热不均匀的状态。而为了保证目标器件10受热均匀，就需要先使得与固定框架30连接的固定 结构20受热均匀，因此，固定框架30与固定结构20连接的两个位置要是等温位置。
图2为本申请实施例中温度控制装置的一种温度分布示意图。应理解，图2所示的温度分布是在环境温度梯度分布在两个固定结构40引入一定温差的条件下得到的，例如，该温差可以是0.1摄氏度。如图2的(a)示例所示，固定框架30与目标器件10上存在最大温差约为50mk的温度分布。如图2的(b)示例所示，目标器件10自身存在最大温差约为2uk的温度分布。可以看出，外界环境引入的温度梯度分布主要存在于固定框架30上，目标器件10则保持了相对均衡的温度，受外界环境温度的影响较小。
应理解，固定框架30上的等温位置并非只有一组。以图1为例，固定框架30为矩形，连接位置B位于矩形其中一条边的中心位置，连接位置D位于矩形另一条对边的中心位置，连接位置B和连接位置D是等温位置。此外，在图1的基础上可以将连接位置B和连接位置D同步向上平移或同步向下平移，连接位置B和连接位置D仍然是等温位置。其中，采用图1所示的等温位置更有利于提升结构的稳定性。
还应理解，上述的等温位置各自都具有一定的长度。以上述图1中的连接位置B为例，连接位置B位于固定框架30的其中一条边上并占用了固定框架30的一段长度，也就是连接位置B的长度。如图2所示，连接位置B所在的一条边上存在最大温差约为50mk的温度分布，连接位置B的长度越短，该连接位置B的温度分布范围越小，越有利于保证固定结构20和目标器件10受热均匀。例如，可以将连接位置B的温度分布范围控制在1mk。需要说明的是，虽然连接位置B的长度越短越有利于减小目标器件10受外界环境温度波动的影响，但是若连接位置B的长度太短也会不利于结构的整体稳定性，因此可以综合两方面因素合理选择连接位置B的长度。上述介绍同理也适用于与连接位置B等温的连接位置D。
需要说明的是，在实际应用中，上述两个等温位置也并不一定要求温度完全相等，只要两个连接位置的温度差值小于第一预设值都可以视为等温位置。其中，两个连接位置各自都具有一定的温度分布，因此两个连接位置的温度差具体可以是两个连接位置各自平均温度的温差。在一种可能的实施方式中，该第一预设值可以参考连接位置B和连接位置D的温度分布范围来设置。例如，连接位置B和连接位置D各自的温度分布范围均为1mk，但是两个连接位置的温度并不相等，如果两个连接位置的温度差值小于1mk即可视为等温位置。在最优选的实施方式中，要求两个等温位置的温度完全相等。
下面介绍一种确定等温位置的具体实施方式。
在一种可能的实施方式中，固定框架30上连接支撑梁50和支撑梁60共有4个连接位置，以这4个连接位置为分界点可以将固定框架30划分为4个子区域。若这4个区域各自的热阻满足指定条件，则固定框架30上连接支撑梁50的两个位置可以视为等温位置，相当于提供了一种确定等温位置的具体实现方式。具体地，以图1为例，固定框架30上的4个连接位置分别记为：连接位置A、连接位置B、连接位置C和连接位置D，固定框架30上的4个子区域分别记为：子区域a、子区域b、子区域c和子区域d。其中，子区域a位于连接位置A与连接位置B之间，子区域b位于连接位置B与连接位置C之间，子区域c位于连接位置C与连接位置D之间，子区域d位于连接位置D与连接位置A之间。将子区域a的热阻记为R1，将子区域b的热阻记为R3，将子区域c的热阻记为R4，将子区域d的热阻记为R2，则上述指定条件为：R1/R3与R2/R4的差值小于第二预设值。作为一个示例，R1/R3和R2/R4的典型 范围是1/5到5，如果R1/R3与R2/R4的差值小于1/50即可认为满足上述指定条件，从而可以将连接位置B和连接位置D视为等温位置。在最优选的实施方式中，要求R1/R3＝R2/R4，以保证连接位置B和连接位置D的温度完全相等。
图3(a)为本申请实施例中温度控制装置的第二种结构示意图。如图3(a)所示，在一些可能的实施方式中，温度控制装置还可以包括温度调节元件70。该温度调节元件可以调节固定框架30、固定结构20和目标元件10的温度，从而实现控温的效果。应理解，本申请不限定温度调节元件70的具体类型，下面主要以温度调节元件70是加热电阻为例进行介绍。例如，加热电阻可以设置在如图3(a)所示的支撑梁60上，加热电阻通过对支撑梁60进行加热以实现对固定框架30、固定结构20和目标元件10的温度调节。图3(b)为本申请实施例中温度控制装置的第三种结构示意图。如图3(b)所示，温度调节元件70也可以设置在支撑梁50上，温度调节元件70通过对支撑梁50进行加热以实现对固定框架30、固定结构20和目标元件10的温度调节。
图4为本申请实施例中温度控制装置的第四种结构示意图。如图4所示为温度控制装置的局部纵切面展示，在一种可能的实施方式中，以温度调节元件70是加热电阻且加热电阻设置在支撑梁60上为例，加热电阻上设置有电极701，电极701上通过加载电压控制加热电阻进行加热。在一些场景中，以目标元件10是谐振器为例，固定结构40上设置有电极401，电极401上加载的电压可以依次通过支撑梁60、固定框架30、支撑梁60和固定结构20传导至谐振器。为了避免加热电阻上加载的加热电压对谐振器上加载的偏置电压造成扰动从而引起谐振器频飘，加热电阻与支撑梁60之间设置有导热绝缘层80，该导热绝缘层80可以实现热传导但却是电隔离的。因此，在保证了温度调节功能正常的基础上，对加热电阻上加载的加热电压和谐振器上加载的偏置电压进行了分离，可以提升加热电压分辨率从而实现更高的加热温度分辨率，且不影响谐振器的功能。
在一种优选的实施方式中，上述支撑梁60、温度调节元件70和导热绝缘层80构成了三层结构。具体地，支撑梁60采用单晶硅，导热绝缘层80采用氮化铝AlN，温度调节元件70采用半导体材料。该半导体材料包括但不限于非晶硅、多晶硅和锗硅等。理论上，对于电阻率为ρe，导热系数为λ的某种材料制成的加热电阻，其加热温度分辨率与结构设计无关，只服从公式其中，U为加热电压，dU为加热电压分辨率。本申请增加了导热绝缘层，提供了向下的散热渠道，也即增加了有效导热系数λeff，从而提升了加热温度分辨率。同时，多层结构设计允许在保证结构刚度不变的情况下将加热电阻做的很薄，阻值做得很大，因此根据功耗公式可知，该方案在同等温升下能减小功耗。
综上，这种优选实施方式提供的三层结构材料的优势在于为加热电阻增加了向下的散热渠道，提升了有效散热系数。并且，采用半导体材料的加热电阻的阻值更大，可以有效降低功耗。相较于三层结构都采用单晶硅的方案和加热电阻采用金属材料的方案，本实施方式具有显著的有益效果，下面结合一个仿真对比图进行进一步说明。
图5为采用不同材料的加热方案的仿真对比示意图。如图5所示，方案1为上述优先实施方式提供的加热方案，方案2为加热电阻采用金属材料的方案，方案3为三层结构都采用单晶硅的方案。其中，温升是电压平方的线性函数，符合公式ΔT＝kU2。方案2的温升K为1417K/V2，方案3的温升K为86.7K/V2，方案1的温升K为1.9K/V2。应理解，图5中斜率越小的方案其温度的调节精度越高。在特定温升ΔT0和加热电压分辨率dU下，加热温度分 辨率可知，本申请提供的方案1的加热温度分辨率比方案2提升了约27倍，比方案3提升了约7倍。本申请提供的方案1的功耗比方案2优化了约800倍，比方案3优化了约68倍。
应理解，在实际应用中，这三层结构也可以采用其他的材料，具体此处不做限定。例如，温度调节元件70也可以采用导体材料。
图6为本申请实施例中温度控制装置的第五种结构示意图。如图6所示，在一些可能的实施方式中，温度控制装置还包括测温元件90。测温元件90固定在固定框架30内侧且与固定结构20连接。测温元件90用于检测目标元件10的温度。应理解，由于外界环境引入的温度梯度分布主要存在于固定框架30上，目标器件10和测温元件90则可以保持相对均衡的温度，受外界环境温度的影响较小，测温精度更高。需要说明的是，本申请不限定测温元件90的具体类型，例如，测温元件90可以是测温电阻，利用电阻值对温度的敏感性，可以通过电阻值来标定温度大小。
需要说明的是，在目标元件10为谐振器的场景中，也可以利用谐振器自身的测温工作模态来实现测温，而无需再单独配置测温元件。其中，谐振器除了具有测温工作模态之外，还具有时钟工作模态。例如，测温工作模态包括但不限于方形扩展(Square extensional，SE)工作模态，时钟工作模态包括但不限于Lame工作模态。应理解，谐振器在不同的工作模态下会输出不同频率的信号。在实际应用中，谐振器可以根据需求SE工作在其中任意一个工作模态下，或者，谐振器也可以同时工作在两个工作模态下。下面对谐振器的两种工作模态进行详细介绍。
图7为本申请实施例中谐振器的两种工作模态示意图。如图7的A示例所示，处于时钟工作模态的谐振器输出信号的频率相对于温度变化存在拐点，在拐点附近的频率几乎不随温度变化而改变。因此，在拐点附近的温度范围内谐振器可以提供稳定的时钟信号输出。如图7的B示例所示，处于测温工作模态的谐振器输出信号的频率随温度的变化而改变，并不存在拐点。因此，可以通过测温工作模态下输出信号的频率来标定温度。例如，可以预先配置好频率与温度之间的对应关系，进而根据测温工作模态下谐振器输出信号的频率以及对应关系确定当前谐振器的温度。
在实际应用中，可以基于谐振器的两种工作模态并配合温度调节元件，以实现谐振器输出频率稳定的时钟信号。具体地，先通过测温工作模态下输出信号的频率来标定温度，进而根据检测得到的温度控制温度调节元件对谐振器的温度进行调节，以将谐振器的温度控制在目标范围，从而可以保证谐振器输出频率稳定的时钟信号。其中，目标范围是时钟工作模态下拐点附近的温度范围，该目标范具体以实际应用为准，此处不做限定。
在一些可能的实施方式中，上述温度控制装置也可以包括两个谐振器，两个谐振器分别工作在不同的工作模态下，通过两个谐振器的配合同样可以实现相同的效果，扩展了本方案的应用场景。下面提供几种采用两个谐振器的具体实施方式。
图8(a)为本申请实施例中温度控制装置的第六种结构示意图。如图8(a)所示，谐振器10a和谐振器10b都与固定结构20固定连接。作为一个示例，谐振器10a处于时钟工作模态，谐振器10b处于测温工作模态。作为另一个示例，谐振器10a处于测温工作模态，谐振 器10b处于时钟工作模态。
图8(b)为本申请实施例中温度控制装置的第七种结构示意图。区别于图8(a)所示的结构，如图8(b)所示，固定结构20包括固定结构201和固定结构202，谐振器10a与固定结构201固定连接，谐振器10b与固定结构202固定连接。通过对比图8(a)与图8(b)所示的结构可知，图8(a)所示的结构将固定结构201和固定结构202融合为一个固定结构20，可以增强谐振器10a和谐振器10b之间的热耦合，有助于提升测温精度。图8(b)所示的结构在固定结构201和固定结构202之间增加了连接杆，相较于图8(a)所示的结构，图8(b)所示的结构提升了结构刚度，增强了整体结构的可靠性。
图8(c)为本申请实施例中温度控制装置的第八种结构示意图。区别于图8(b)所示的结构，如图8(c)所示，谐振器10a与谐振器10b之间可以成任意夹角，而并非一定要平行放置，扩展了双谐振器的应用场景。在一种可能的场景中，谐振器10a工作在100晶向的时钟工作模态，谐振器10b工作在110晶向的测温工作模态，此时的测温工作模态本征频率对温度非常敏感，支持高精度测温。
图8(d)为本申请实施例中温度控制装置的第九种结构示意图。如图8(d)所示，谐振器10a和谐振器10b也可以具有不同的形态，从而适配不同的工作模态。例如，谐振器10a为正方形结构，谐振器10b为长方形结构。谐振器10a可以应用在Lame工作模态或SE工作模态。谐振器10b可以应用在长度扩展(length extensional，LE)工作模态。
在一些可能的实施方式中，上述温度控制装置在上述双层结构的基础上，还可以进一步扩展到更多层结构，经过多层结构的隔离，可以更好地维持目标元件10上温度的均匀性。下面以扩展到三层结构为例进行介绍。
图9为本申请实施例中温度控制装置的第十种结构示意图。如图9所示，支撑梁60包括连接梁601和连接框架602。固定框架30位于连接框架602内侧且与连接框架602连接。连接梁601的一端与固定结构40连接，连接梁601的另一端与连接框架602连接。应理解，连接框架602可以视为外层结构，固定框架30可以视为中间层结构，固定结构20可以视为内层结构，从而形成了一种三层隔温结构。应理解，该三层结构中每相邻两层结构之间的两个连接位置是等温的。例如，固定框架30与固定结构20连接的两个位置是等温的，并且，连接框架602与固定框架30连接的两个位置也是等温的。基于图9所示的结构，还可以按照类似的方式扩展到更多层结构，具体方式此处不再赘述。
在目标元件10是谐振器的场景中，MEMS谐振器和石英MEMS谐振器都可以直接应用在上述任一实施例中，MEMS谐振器和石英MEMS谐振器通常可以通过连接杆与固定结构20连接。而对于石英谐振器，由于制造工艺的不同，石英谐振器通常是粘接在固定结构20上，除此之外，其他的特征均与上述各实施例类似，此处不再赘述。下面提供一些附图展示石英谐振器应用在上述温度控制装置中的实现方式。
图10(a)为本申请实施例中温度控制装置的第十一种结构示意图。如图10(a)所示，石英谐振器10粘接在固定结构20上。图10(b)为本申请实施例中温度控制装置的第十二种结构示意图。如图10(b)所示，温度控制装置包括石英谐振器10a和石英谐振器10b，石英谐振器10a和石英谐振器10b均粘接在固定结构20上。图10(c)为本申请实施例中温度控制装置的第十三种结构示意图。如图10(c)所示，温度控制装置包括石英谐振器10a和 MEMS谐振器10b，石英谐振器10a粘接在固定结构20上，MEMS谐振器10b通过连接杆与固定结构20连接。该方案同时利用了石英晶体谐振器10a频率温漂小的特点与MEMS谐振器10b频率温飘大的特点，通过将石英晶体谐振器10a作为时钟减小了频率温飘，通过MEMS谐振器10b作为测温传感器提升了测温灵敏度，从而提升了输出时钟信号的频率温度稳定性。图10(d)为本申请实施例中温度控制装置的第十四种结构示意图。如图10(d)所示，温度控制装置还包括测温元件90，测温元件90可用于检测石英谐振器10的温度。
在一些可能的实施方式中，上述温度控制装置可以通过绝缘体上单晶硅片(Silicon On Insulator，SOI)加工形成，温度控制装置包括器件层、绝缘层和衬底层，绝缘层位于器件层与衬底层之间。应理解，器件层和衬底层的材料包括但不限于硅、多晶硅和碳化硅，绝缘层的材料包括但不限于二氧化硅和氮化硅。对于不同的谐振器类型，具体加工方式也会有一些差异，下面分别进行介绍。
作为一个示例，MEMS谐振器、固定结构20、固定框架30和固定结构40都位于器件层，固定结构40固定在衬底层上。衬底层上可以设计一个镂空区域，MEMS谐振器、固定结构20和固定框架30都可以悬挂在镂空区域上。应理解，该示例主要适用于MEMS谐振器的场景。
作为另一个示例，若采用石英谐振器，则固定结构20、固定框架30和固定结构40各自的其中一部分位于衬底层。也就是说，不同于上述采用MEMS谐振器的示例，本示例中还需要用到衬底层来制作固定结构20、固定框架30和固定结构40。进而，固定结构40用于固定在底座上，以使得石英谐振器、固定结构20和固定框架30处于悬挂状态。应理解，在一些可能的场景中，固定结构40具体可以固定在封装管壳上。应理解，在该示例中不限定器件层的具体设计方式，该示例可以适用于MEMS谐振器和石英谐振器的场景。
综合上面对温度控制装置的介绍可知，本申请提供了一种双层结构设计用于隔离目标器件与外界环境，起到了更好地热隔离作用。其中，位于外层的固定框架直接与外界环境接触，外界环境引入的温度梯度分布主要存在于固定框架上。位于内层的固定结构通过两个支撑梁与固定框架连接，固定框架上分别连接两个支撑梁的两个位置之间温差小于第一预设值。也就是说，固定结构与固定框架上的两个等温位置连接，因此固定结构的受热更为均匀，可以使得固定结构以及与其连接的目标元件保持相对均衡的温度，减小目标器件受外界环境温度波动的影响，可以提高测温精度。
上面对本申请提供的温度控制装置进行了介绍，若目标器件采用谐振器，则温度控制装置还可以应用于振荡器的场景。其中，振荡器包括温控振荡器和温补振荡器。具体地，温控振荡器可以是采用MEMS谐振器的温控MEMS振荡器(Oven-controlled MEMS oscillator，OCMO)，也可以是采用石英谐振器的温控石英振荡器(Oven-controlled crystal oscillator，OCXO)。温补振荡器可以是采用MEMS谐振器的温补MEMS振荡器(Temperature compensated MEMS oscillator，TCMO)，也可以是采用石英谐振器的温补石英振荡器(Temperature compensated crystal oscillator，TCXO)。应理解，温控振荡器是通过主动的温度调节来提供频率稳定的时钟信号。温补振荡器是通过温度补偿模块从算法上补偿温漂引起的频飘实现频率稳定的时钟信号。
下面分别对温控振荡器和温补振荡器的具体实现方式进行介绍。
图11为本申请实施例中温控振荡器的一种结构示意图。如图11所示，温控振荡器包括控制器和温度控制装置。其中，温度控制装置中的目标元件为谐振器，且温度控制装置包括温度调节元件，温度控制装置的其他特征可以参考上述任一实施例的相关介绍，此处不再赘述。应理解，控制器可以获取谐振器的原始温度，该原始温度可以理解为当前检测到的谐振器温度。进而，控制器根据原始温度控制温度调节元件以将原始温度调节到目标温度，从而使得谐振器在时钟工作模态下可以输出频率稳定的时钟信号。其中，参考上述图7所示的A示例，目标温度位于拐点附近的温度范围，在拐点附近的频率几乎不随温度变化而改变，保证了谐振器可以输出频率稳定的时钟信号。
在一种可能的实施方式中，如图11所示，谐振器在测温工作模态下向控制器输出测温信号，控制器具体根据测温信号来确定谐振器的原始温度。其中，参考上述图7所示的B示例，处于测温工作模态的谐振器输出信号的频率随温度的变化而改变，并不存在拐点。因此，可以通过测温工作模态下输出信号的频率来标定温度。
在另一种可能的实施方式中，温度控制装置还可以包括测温元件(此处不再提供附图展示)，通过测温元件检测谐振器的原始温度并反馈给控制器。
图12为本申请实施例中温补振荡器的一种结构示意图。如图12所示，温补振荡器包括温度补偿模块和温度控制装置。其中，温度控制装置中的目标元件为谐振器。区别于上述图11所示的温控振荡器，本实施例中的温度控制装置无需设置温度调节元件。关于温度控制装置的其他特征可以参考上述任一实施例的相关介绍，此处不再赘述。应理解，谐振器用于向温度补偿模块输出原始时钟信号。温度补偿模块获取谐振器的温度，并根据该温度对原始时钟信号进行调节以得到频率稳定的目标时钟信号。
在一种可能的实施方式中，如图12所示，谐振器在测温工作模态下向温度补偿模块输出测温信号，温度补偿模块具体根据测温信号来确定谐振器的温度。其中，参考上述图7所示的B示例，处于测温工作模态的谐振器输出信号的频率随温度的变化而改变，并不存在拐点。因此，可以通过测温工作模态下输出信号的频率来标定温度。
在另一种可能的实施方式中，温度控制装置还可以包括测温元件(此处不再提供附图展示)，通过测温元件检测谐振器的温度并反馈给温度补偿模块。
应理解，本申请提供的双层设计的温度控制装置保证了谐振器处于温度均匀性较高的状态，因此谐振器的测温工作模态与时钟工作模态所感受到的温度差较小，故测温工作模态能对时钟工作模态所处温度进行高精度测量，有助于谐振器输出频率更为稳定的时钟信号。
需要说明的是，以上实施例仅用以说明本申请的技术方案，而非对其限制。尽管参照前述实施例对本申请进行了详细说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。

Claims (19)

  1. 一种温度控制装置，其特征在于，包括：第一固定结构、第二固定结构、两个第一支撑梁、两个第二支撑梁、固定框架和目标器件；
    所述第一固定结构和所述目标器件位于所述固定框架内侧，所述第二固定结构位于所述固定框架外侧，所述第一固定结构分别通过两个所述第一支撑梁与所述固定框架连接，所述第二固定结构分别通过两个所述第二支撑梁与所述固定框架连接，所述目标器件与所述第一固定结构固定连接，所述固定框架上分别连接两个所述第一支撑梁的第一连接位置和第二连接位置的温度差值小于第一预设值。
  2. 根据权利要求1所述的温度控制装置，其特征在于，所述固定框架上的第三连接位置和第四连接位置分别连接两个所述第二支撑梁，所述固定框架包括第一子区域、第二子区域、第三子区域和第四子区域，所述第一子区域位于所述第一连接位置与所述第三连接位置之间，所述第二子区域位于所述第二连接位置与所述第三连接位置之间，所述第三子区域位于所述第一连接位置与所述第四连接位置之间，所述第四子区域位于所述第二连接位置与所述第四连接位置之间，所述第一子区域的热阻与所述第三子区域的热阻的比值为第一比值，所述第二子区域的热阻与所述第四子区域的热阻的比值为第二比值，所述第一比值与所述第二比值的差值小于第二预设值。
  3. 根据权利要求1或2所述的温度控制装置，其特征在于，所述温度控制装置还包括温度调节元件，所述温度调节元件用于调节所述固定框架、所述第一固定结构和所述目标元件的温度。
  4. 根据权利要求3所述的温度控制装置，其特征在于，所述温度调节元件位于所述第二支撑梁上，且所述温度调节元件与所述第二支撑梁之间设置有导热绝缘层；
    和/或，所述温度调节元件位于所述第一支撑梁上，且所述温度调节元件与所述第一支撑梁之间设置有导热绝缘层。
  5. 根据权利要求4所述的温度控制装置，其特征在于，所述温度调节元件上通过加载第一电压进行加热，所述第一支撑梁和/或第二支撑梁上加载的第二电压传导至所述目标器件，所述第一电压与所述第二电压电隔离。
  6. 根据权利要求1至5中任一项所述的温度控制装置，其特征在于，所述温度控制装置还包括测温元件，所述测温元件位于所述固定框架内侧且与所述第一固定结构固定连接，所述测温元件用于检测所述目标器件的温度。
  7. 根据权利要求1至6中任一项所述的温度控制装置，其特征在于，所述目标器件为第一谐振器，所述第一谐振器包括时钟工作模态和测温工作模态；
    当所述第一谐振器处于所述时钟工作模态且所述第一谐振器的温度处于目标范围时，所述第一谐振器输出频率稳定的时钟信号；
    当所述第一谐振器处于所述测温工作模态时，所述第一谐振器输出的测温信号用于表示所述第一谐振器的温度。
  8. 根据权利要求7所述的温度控制装置，其特征在于，所述温度控制装置还包括第二谐振器，所述第二谐振器位于所述固定框架内侧且与所述第一固定结构固定连接；
    所述第一谐振器处于时钟工作模态，所述第二谐振器处于测温工作模态，或者，所述第 一谐振器处于测温工作模态，所述第二谐振器处于时钟工作模态。
  9. 根据权利要求7或8所述的温度控制装置，其特征在于，所述第一谐振器的类型包括微机电系统MEMS谐振器、石英谐振器和石英MEMS谐振器。
  10. 根据权利要求1至9中任一项所述的温度控制装置，其特征在于，所述第二支撑梁包括连接梁和连接框架，所述固定框架位于所述连接框架内侧且与所述连接框架连接，所述连接梁的一端与所述第二固定结构连接，所述连接梁的另一端与所述连接框架连接，所述连接框架上与所述固定框架连接的两个连接位置的温度差值小于所述第一预设值。
  11. 根据权利要求1至10中任一项所述的温度控制装置，其特征在于，所述第一固定结构为框架结构。
  12. 根据权利要求1至11中任一项所述的温度控制装置，其特征在于，所述温度控制装置还包括衬底层，所述第二固定结构固定在所述衬底层上，所述固定框架、所述第一固定结构和所述目标器件悬挂在所述衬底层上。
  13. 根据权利要求1至11中任一项所述的温度控制装置，其特征在于，所述温度控制装置还包括衬底层和底座，所述第一固定结构、所述第二固定结构和所述固定框架各自的一部分结构位于所述衬底层，所述第二固定结构固定在所述底座上，所述固定框架、所述第一固定结构和所述目标器件悬挂在所述底座上。
  14. 一种温补振荡器，其特征在于，包括：温度补偿模块和如权利要求1至13中任一项所述的温度控制装置，其中，所述温度控制装置中的目标器件为谐振器；
    所述谐振器用于向所述温度补偿模块输出原始时钟信号；
    所述温度补偿模块用于获取所述谐振器的温度，并根据所述温度对所述原始时钟信号进行调节以得到频率稳定的目标时钟信号。
  15. 根据权利要求14所述的温补振荡器，其特征在于，所述谐振器还用于向所述温度补偿模块输出测温信号；
    所述温度补偿模块具体用于根据所述测温信号获取所述谐振器的温度。
  16. 根据权利要求14所述的温补振荡器，其特征在于，所述温度控制装置包括测温元件，所述测温元件用于检测所述谐振器的温度；
    所述温度补偿模块具体用于通过所述测温元件获取所述谐振器的温度。
  17. 一种温控振荡器，其特征在于，包括：控制器和如权利要求1至13中任一项所述的温度控制装置，其中，所述温度控制装置中的目标器件为谐振器，所述温度控制装置包括温度调节元件；
    所述控制器用于获取所述谐振器的原始温度，并根据所述原始温度控制所述温度调节元件以将所述原始温度调节到目标温度；
    当所述第一谐振器处于时钟工作模态且所述第一谐振器处于所述目标温度时，所述第一谐振器输出频率稳定的时钟信号。
  18. 根据权利要求17所述的温控振荡器，其特征在于，所述谐振器用于向所述控制器输出测温信号；
    所述控制器具体用于根据所述测温信号获取所述谐振器的原始温度。
  19. 根据权利要求17所述的温控振荡器，其特征在于，所述温度控制装置包括测温元件， 所述测温元件用于检测所述谐振器的原始温度；
    所述控制器具体用于通过所述测温元件获取所述谐振器的原始温度。
PCT/CN2023/098306 2022-07-30 2023-06-05 一种温度控制装置及相关设备 WO2024027326A1 (zh)

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JPH08186467A (ja) * 1994-12-29 1996-07-16 Murata Mfg Co Ltd 拡がり振動型圧電振動子およびその製造方法
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