Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0225—Out-coupling of light
  • H01S5/02253—Out-coupling of light using lenses
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0225—Out-coupling of light
  • H01S5/02255—Out-coupling of light using beam deflecting elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0225—Out-coupling of light
  • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/023—Mount members, e.g. sub-mount members
  • H01S5/02315—Support members, e.g. bases or carriers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/0225—Out-coupling of light
  • H01S5/02251—Out-coupling of light using optical fibres
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/022—Mountings; Housings
  • H01S5/023—Mount members, e.g. sub-mount members

Definitions

• the present disclosure relates to a light emitting module.
• DDL Direct Diode Laser
• a light emitting module including a plurality of semiconductor laser elements is used in the DDL technology.
• the light emitting module combines a plurality of laser beams obtained by emitting laser beams from each of a plurality of semiconductor laser elements, and emits a high-power laser beam.
• the traveling directions of a plurality of laser beams are aligned in the same direction as designed, the plurality of laser beams can be effectively combined.
• Patent Document 1 discloses an example of an optical component that can reduce the deviation between the traveling direction of laser light emitted from a semiconductor laser element and the designed traveling direction.
• a light emitting module includes a plurality of light emitting devices that can reduce the deviation between the traveling direction of laser light emitted from a semiconductor laser element and the designed traveling direction.
• the light emitting module of the present disclosure includes a support base having a plurality of mounting surfaces arranged in a first direction, and a plurality of light emitting devices, each of which has a corresponding light emitting device disposed on each of the plurality of mounting surfaces.
• the apparatus each includes a substrate having a mounting surface, a semiconductor laser element supported by the mounting surface, a first mirror member supported by the mounting surface, and an opposing mirror member opposite to the mounting surface of the substrate. a second mirror member supported by the upper surface of the cover; and a second mirror member supported by the upper surface of the cover.
• the first mirror member has a first reflective surface
• the first reflective surface is attached to the mounting surface.
• the second mirror member has a second reflective surface, and at least a portion of the second reflective surface is located above at least a portion of the first reflective surface;
• the semiconductor laser element is arranged to emit a laser beam toward the first reflective surface, and the first reflective surface reflects the laser beam and directs the traveling direction of the laser beam toward the substrate.
• the cover transmits the laser beam reflected by the first reflective surface, and the second reflective surface transmits the laser beam reflected by the first reflective surface.
• the traveling direction of the laser beam is further changed to a second direction intersecting the first direction by reflection, and each of the plurality of third mirror members has a third reflective surface, and the third reflective surface reflects the laser beam traveling in the second direction to change the traveling direction of the laser beam to the first direction, and the condenser lens reflects the laser beam traveling in the second direction, and the condenser lens A plurality of laser beams obtained by the laser beam being reflected by the third reflecting surface are coupled to an optical fiber.
• a light emitting module including a plurality of light emitting devices that can reduce the deviation between the traveling direction of laser light emitted from a semiconductor laser element and the designed traveling direction.
• FIG. 1A is a top view schematically illustrating the configuration of a light emitting module according to an exemplary embodiment of the present disclosure.
• FIG. 1B is a side view schematically showing the configuration of a light emitting module according to an exemplary embodiment of the present disclosure.
• FIG. 1C is another side view schematically showing the configuration of a light emitting module according to an exemplary embodiment of the present disclosure.
• FIG. 1D is a top view schematically showing the configuration of a modified example of the light emitting module according to the embodiment of the present disclosure.
• FIG. 2A is a perspective view schematically showing the configuration of a light emitting device according to an exemplary embodiment of the present disclosure.
• FIG. 2B is an exploded perspective view of the light emitting device shown in FIG. 2A.
• FIG. 2C is another exploded perspective view of the light emitting device shown in FIG. 2A.
• FIG. 2D is a perspective view of the frame included in the light emitting device shown in FIG. 2C, viewed from below.
• FIG. 2E is a top view of the light emitting device shown in FIG. 2A with the second mirror member and cover omitted.
• FIG. 2F is a cross-sectional view of the light emitting device shown in FIG. 2A, parallel to the YZ plane.
• FIG. 3 is a diagram schematically illustrating the configuration of a DDL device according to an exemplary embodiment of the present disclosure.
• FIG. 4A is an exploded perspective view of the laser light source.
• FIG. 4B is a cross-sectional view of the laser light source parallel to the YZ plane.
• polygons such as triangles or quadrilaterals include shapes whose corners have been rounded, chamfered, chamfered, rounded, etc. call. Furthermore, not only the corners (edges of sides) but also shapes in which the middle portions of the sides are processed are also called polygons. In other words, a shape that is partially processed while remaining a polygon as a base is included in the interpretation of "polygon" described in this specification and claims.
• FIG. 1A is a top view schematically illustrating the configuration of a light emitting module according to an exemplary embodiment of the present disclosure.
• FIG. 1B is a side view schematically showing the configuration of a light emitting module according to an exemplary embodiment of the present disclosure.
• FIG. 1C is another side view schematically showing the configuration of a light emitting module according to an exemplary embodiment of the present disclosure.
• the X-axis, Y-axis, and Z-axis which are perpendicular to each other, are schematically shown.
• the direction of the arrow on the X-axis is called the +X direction, and the opposite direction is called the -X direction.
• the ⁇ X direction is not distinguished, it is simply referred to as the X direction.
• the Y direction and the Z direction are referred to as "upward” and the -Y direction is referred to as "downward.” This does not limit the orientation of the light emitting module during use, and the orientation of the light emitting module is arbitrary.
• the light emitting module 200 shown in FIGS. 1A to 1C includes a support base 60, a condenser lens 70, an optical fiber 80, a support member 82 that supports the optical fiber 80, a plurality of slow-axis collimating lenses 92, and a plurality of slow-axis collimating lenses 92.
• a mirror member 94 and a plurality of light emitting devices 100 are provided. Each mirror member 94 has a reflective surface 94s.
• the support base 60 is arranged on a reference plane Ref parallel to the XZ plane.
• the reference plane Ref is a height reference plane in the light emitting module 200.
• the support base 60 includes a first portion 60-1 that supports a plurality of light emitting devices 100, as shown in FIG. 1A.
• the support base 60 further includes a plurality of second portions 60-2 supported by the first portion 60-1. Each second portion 60-2 supports a corresponding slow-axis collimating lens 92 and mirror member 94.
• the support base 60 further includes a third portion 60-3 connected to the first portion 60-1.
• the third portion 60-3 supports the condenser lens 70 and the optical fiber 80.
• the first portion 60-1 has a plurality of first mounting surfaces 60s1 arranged in the X direction.
• a corresponding second portion 60-2 is arranged on each first mounting surface 60s1.
• Each second portion 60-2 has a second mounting surface 60s2.
• the third portion 60-3 has a third mounting surface 60s3.
• the heights of the plurality of first mounting surfaces 60s1 decrease stepwise along the +X direction, as shown in FIG. 1B. The same applies to the heights of the plurality of second mounting surfaces 60s2.
• a corresponding light emitting device 100 is arranged on each first mounting surface 60s1.
• a corresponding slow-axis collimating lens 92 and mirror member 94 are arranged on each second mounting surface 60s2. If the slow-axis collimating lens 92 and/or the mirror member 94 have sufficiently large dimensions in the Y direction, the slow-axis collimating lens 92 and/or the mirror member 94 may be placed in the first position without using the second portion 60-2. It may be arranged on the surface 60s1.
• a condensing lens 70 is disposed on the third mounting surface 60s3, and an optical fiber 80 is disposed via a support member 82.
• the height of the third mounting surface 60s3 is larger than the minimum height and smaller than the maximum height of the plurality of first mounting surfaces 60s1.
• the height of the third mounting surface 60s3 is further smaller than the minimum height of the plurality of second mounting surfaces 60s2.
• the height of the third mounting surface 60s3 may be equal to or smaller than the minimum height of the plurality of first mounting surfaces 60s1.
• the height of the third mounting surface 60s3 may be equal to or greater than the maximum height of the plurality of first mounting surfaces 60s1.
• the number of light emitting devices 100 is four, and the number of first mounting surfaces 60s1 is four, but the number is not limited to these.
• the number of light emitting devices 100 may be two, three, or five or more. As the number of light emitting devices 100 increases, it becomes possible to obtain higher output laser light.
• the number of first mounting surfaces 60s1 may be two, three, five or more, and may be equal to or greater than the number of light emitting devices 100.
• the support base 60 may be formed of a ceramic selected from the group consisting of AlN, SiN, SiC, and alumina, for example. Alternatively, the support base 60 may be formed from at least one metal material selected from the group consisting of, for example, Cu, Al, and Ag. Support substrate 60 may be formed, for example, from a metal matrix composite material in which diamond particles are dispersed in at least one metal material selected from the group consisting of Cu, Al, and Ag.
• the support base 60 may be formed integrally or may be an assembly of a plurality of parts. The plurality of parts may be made of the same material or may be made of different materials.
• first portion 60-1, the plurality of second portions 60-2, and the third portion 60-3 may be formed integrally or may be formed independently from each other.
• first portion 60-1 and the third portion 60-3 are integrally formed, and the plurality of second portions 60-2 are independent of the first portion 60-1 and the third portion 60-3. It may be formed as follows.
• the support base 60 is made of a metal material selected from the group consisting of Cu, Al, and Ag, and is made of a single member. Metal materials have better heat dissipation than ceramics, and are softer and easier to process.
• the support base 60 functions as a support base on which the plurality of light emitting devices 100 are arranged.
• the support base 60 can further function as a heat sink that transmits heat emitted from the plurality of light emitting devices 100 to the outside to reduce excessive temperature rise of the light emitting devices 100.
• one or more channels for liquid cooling may be provided inside the support base 60.
• water can be used as the liquid used for liquid cooling.
• a fin structure for air cooling may be provided on the surface of the support base 60.
• the support base 60 can also function as a heat spreader that transmits the heat emitted from the plurality of light emitting devices 100 to the heat sink.
• Each light emitting device 100 emits laser light L in the +Z direction, as shown in FIGS. 1A and 1C.
• each slow axis collimating lens 92 collimates laser light emitted from the corresponding light emitting device 100 and traveling in the +Z direction in the XZ plane.
• the reflective surface 94s of each mirror member 94 reflects the collimated laser beam L emitted from the corresponding light emitting device 100 and directs the traveling direction of the laser beam L toward the condenser lens 70. Change it in the +X direction toward .
• the laser light L emitted from each light emitting device 100 is represented by a thick line with three arrows in the example shown in FIG.
• the condenser lens 70 has a fast-axis condenser lens 70a and a slow-axis condenser lens 70b.
• the fast-axis condensing lens 70a may be, for example, a cylindrical lens having a uniform cross-sectional shape in the Z direction
• the slow-axis condensing lens 70b may be, for example, a cylindrical lens having a uniform cross-sectional shape in the Y direction.
• the optical axes of the fast-axis condensing lens 70a and the slow-axis condensing lens 70b are parallel to the X direction.
• Condenser lens 70 may be formed from at least one translucent material selected from the group consisting of glass, silicon, quartz, synthetic quartz, sapphire, transparent ceramics, silicone resin, and plastic, for example.
• the fast-axis condensing lens 70a is arranged so that its focal point almost coincides with the light incident end 80a of the optical fiber 80.
• the slow axis condensing lens 70b is arranged so that its focal point substantially coincides with the light incident end 80a of the optical fiber 80.
• the focal length of the fast-axis condenser lens 70a is longer than the focal length of the slow-axis condenser lens 70b.
• the fast-axis condensing lens 70a directs a plurality of laser beams L obtained by emitting laser beams L from each of the plurality of light emitting devices 100 in the XY plane to a light input end of the optical fiber 80. Converge to 80a.
• the slow-axis condensing lens 70b converges the spread laser light L emitted from each of the plurality of light emitting devices 100 onto the light incident end 80a in the XZ plane.
• the laser beam L emitted from each of the plurality of light emitting devices 100 in the +Z direction is reflected in the +X direction by the corresponding reflecting surface 94s.
• the plurality of laser beams L thus obtained can be combined by the condensing lens 70 and made to enter the optical fiber 80 .
• the light emitting module 200 emits combined light in which the plurality of laser beams L are combined from the light emitting end 80b of the optical fiber 80.
• the output of the combined light is approximately equal to the value obtained by multiplying the output of the laser beam L emitted from each light emitting device 100 by the number of light emitting devices 100. Therefore, by increasing the number of light emitting devices 100, the output of combined light can be increased.
• FIG. 1D is a top view schematically showing the configuration of a modified example of the light emitting module according to the embodiment of the present disclosure.
• the light emitting module 210 shown in FIG. 1D differs from the light emitting module 200 shown in FIGS. 1A to 1C in the following three points.
• the first point is that the light emitting module 210 includes a support base 62 instead of the support base 60.
• the shape of the support base 62 is different from the shape of the support base 60.
• the second point is that the light emitting module 210 includes, in addition to the plurality of light emitting devices 100-1, the plurality of slow axis collimating lenses 92a, and the plurality of mirror members 94a, the light emitting module 210 includes a plurality of light emitting devices 100-2, a plurality of slow axis collimating lenses 92a, and a plurality of slow axis collimating lenses 92a. It further includes a lens 92b and a plurality of mirror members 94b.
• Each mirror member 94a has a reflective surface 94as
• each mirror member 94b has a reflective surface 94bs.
• the third point is that the light emitting module 210 further includes a mirror member 94c, a 1/2 wavelength plate 96, and a polarizing beam splitter 98.
• the mirror member 94c has a reflective surface 94cs.
• the support base 62 includes a first portion 62-1 that supports a plurality of light emitting devices 100-1 and a plurality of light emitting devices 100-2.
• the support base 62 further includes a plurality of second portions 62-2 supported by the first portions 62-1.
• Each second portion 62-2 supports a corresponding slow-axis collimating lens 92a, slow-axis collimating lens 92b, mirror member 94a, and mirror member 94b.
• the support base 62 further includes a third portion 62-3 connected to the first portion 62-1.
• the third portion 62-3 supports a condenser lens 70, an optical fiber 80, a mirror member 94c, a half-wave plate 96, and a polarizing beam splitter 98.
• the first portion 62-1 has a plurality of first mounting surfaces 60s1 arranged in the X direction.
• a corresponding second portion 62-2 is arranged on each first mounting surface 60s1.
• Each second portion 62-2 has a second mounting surface 60s2.
• the third portion 62-3 has a third mounting surface 60s3.
• the light emitting device 100-2, the slow axis collimating lens 92a, and the mirror member 94a have the same structures as the light emitting device 100, the slow axis collimating lens 92, and the mirror member 94 shown in FIG. 1A, respectively. The same applies to the light emitting device 100-2, the slow axis collimating lens 92b, and the mirror member 94b.
• the light emitting device 100-1, the slow axis collimating lens 92a, and the mirror member 94a are arranged in this order along the +Z direction, and the light emitting device 100-2, the slow axis collimating lens 92b, and the mirror member 94b are arranged in the -Z direction. They are arranged in this order along the direction.
• the positions of the light emitting device 100-1 and the light emitting device 100-2 are reversed in the Z direction. The same applies to the arrangement of the slow-axis collimating lens 92a and the slow-axis collimating lens 92b, and the arrangement of the mirror member 94a and the mirror member 94b.
• Each light emitting device 100-1 and each light emitting device 100-2 is arranged on the corresponding first mounting surface 60s1.
• Each light emitting device 100-1 emits laser light La in the +Z direction
• each light emitting device 100-2 emits laser light Lb in the ⁇ Z direction.
• the polarization directions of the laser beams La and Lb are parallel to the X direction.
• Each slow axis collimating lens 92a, each slow axis collimating lens 92b, each mirror member 94a, and each mirror member 94b are arranged on the corresponding second mounting surface 60s2.
• Each slow axis collimating lens 92a collimates the laser beam La emitted in the +Z direction from the corresponding light emitting device 100-1 in the XZ plane.
• Each slow axis collimating lens 92b collimates the laser beam Lb emitted from the corresponding light emitting device 100-2 in the ⁇ Z direction in the XZ plane.
• the reflecting surface 94as of each mirror member 94a reflects the collimated laser beam La to change the traveling direction of the laser beam La to the +X direction.
• the reflective surface 94bs of each mirror member 94b reflects the collimated laser beam Lb and changes the traveling direction of the laser beam Lb to the +X direction.
• the mirror member 94c, the 1/2 wavelength plate 96, and the polarizing beam splitter 98 are arranged on the third mounting surface 60s3.
• the reflective surface 94cs of the mirror member 94c reflects the laser beam Lb traveling in the +X direction and changes the traveling direction of the laser beam Lb to the -Z direction.
• the half-wave plate 96 changes the polarization direction of the laser beam Lb traveling in the ⁇ Z direction from the X direction to the Y direction.
• the polarizing beam splitter 98 transmits laser light La that travels in the +X direction and has a polarization direction in the Z direction, and reflects laser light Lb that travels in the -Z direction and has a polarization direction in the Y direction.
• the laser beam La transmitted through the polarizing beam splitter 98 is focused by the condensing lens 70 onto the light incident end 80a of the optical fiber 80.
• the laser beam Lb reflected by the polarizing beam splitter 98 is converged by the condensing lens 70 onto the light incident end 80a of the optical fiber 80.
• the light emitting module 210 emits a combined light in which the plurality of laser beams La and the plurality of laser beams Lb are combined from the light emitting end 80b of the optical fiber 80.
• the total number of light emitting devices 100-1 and the number of light emitting devices 100-2 is twice the number of light emitting devices 100, compared to the light emitting module 200 illustrated in FIG. It is. Therefore, the output of the combined light can be further increased.
• the traveling directions of the plurality of laser beams L when the traveling directions of the plurality of laser beams L are aligned in the +X direction as designed, the plurality of laser beams L can be effectively combined by the condenser lens 70 and enter the optical fiber 80. can.
• the traveling directions of the plurality of laser beams La and the plurality of laser beams Lb are aligned in the +X direction as designed.
• the corresponding light emitting device 100 is arranged on each of the plurality of first mounting surfaces 60s1 having different heights, but the structure is not limited to such a structure. Alternatively, a plurality of light emitting devices 100 may be employed in a more general spatially coupled light emitting module.
• FIG. 2A is a perspective view schematically showing the configuration of a light emitting device according to an exemplary embodiment of the present disclosure.
• FIG. 2B is an exploded perspective view of the light emitting device shown in FIG. 2A.
• the light emitting device 100 shown in FIG. 2B includes a substrate 10, a laser light source 20, a first mirror member 30a, a second mirror member 30b, a frame 40, a plurality of wires 40w, and a cover 50.
• the substrate 10 has a mounting surface of 10 us.
• the first mirror member 30a has a first reflective surface 30as
• the second mirror member 30b has a second reflective surface 30bs.
• the laser light source 20 is a chip-on-submount type semiconductor laser light source having a semiconductor laser element 22 .
• the light emitting device 100 may further include a protection element such as a Zener diode and/or a temperature measurement element for measuring internal temperature such as a thermistor.
• FIG. 2C is another exploded perspective view of the light emitting device 100 shown in FIG. 2A. In FIG. 2C, the plurality of wires 40w shown in FIG. 2B are omitted.
• FIG. 2D is a perspective view of the frame 40 included in the light emitting device 100 shown in FIG. 2C, viewed from below.
• FIG. 2E is a top view of a configuration in which the second mirror member 30b and cover 50 are omitted from the light emitting device 100 shown in FIG. 2A.
• FIG. 2F is a cross-sectional view of the light emitting device 100 shown in FIG. 2A, parallel to the YZ plane.
• the laser light L emitted from the laser light source 20 is reflected in this order by the first reflective surface 30as and the second reflective surface 30bs. be done.
• the first reflecting surface 30as and the second reflecting surface 30bs are independent of whether the traveling direction of the laser beam L emitted from the laser light source 20 deviates from the +Z direction which is the designed traveling direction.
• the traveling direction of the laser beam L reflected in this order can be directed to the +Z direction.
• the first reflective surface 30as reflects the laser light L emitted from the laser light source 20 and changes the traveling direction of the laser light L in a direction away from the mounting surface 10us of the substrate 10.
• the second reflecting surface 30bs reflects the laser beam L reflected by the first reflecting surface 30as to further change the traveling direction of the laser beam L in the +Z direction.
• the position and orientation of the second mirror member 30b can be adjusted so that the laser beam L reflected by the second reflective surface 30bs travels in the +Z direction.
• the traveling direction of the laser beam L can be changed to the +X direction, which is the designed traveling direction. can.
• the plurality of laser beams L traveling in the +X direction can be effectively combined to output high-power combined light from the light emitting module 200.
• the traveling direction of the laser beam L incident on the reflective surface 94s is not parallel to the designed +Z direction
• the traveling direction of the laser beam L reflected by the reflective surface 94s deviates from the designed +X direction.
• the plurality of laser beams L having such a shift in the traveling direction may not be effectively combined, even if the angle of shift is several degrees, and the output of the combined light may be reduced.
• the deviation between the traveling direction of the laser beam L reflected in this order by the first reflecting surface 30as and the second reflecting surface 30bs and the +Z direction which is the designed traveling direction is reduced. be able to.
• the angle between the traveling direction of the laser beam L and the designed traveling direction is preferably, for example, 1° or less, and more preferably 0.1° or less. In this specification, the angle between two directions has a positive value and does not have a negative value.
• the designed traveling direction of the laser beam L reflected in this order by the first reflective surface 30as and the second reflective surface 30bs is parallel to the +Z direction, and the laser beam reflected by the reflective surface 94s
• the designed direction of movement of L is parallel to the +X direction.
• the designed direction of travel is not limited to these directions.
• the direction in which the plurality of first mounting surfaces 60s1 are lined up is referred to as a "first direction", and the traveling direction of the laser beam L reflected in this order by the first reflective surface 30as and the second reflective surface 30bs is referred to as " “Second direction”.
• the reference plane Ref is parallel to the first direction.
• the first direction is the +X direction and the second direction is the +Z direction, but the present invention is not limited to these directions.
• the second direction does not need to be orthogonal to the first direction as long as it intersects with the first direction.
• the light emitting device 100 may be used for other purposes without being adopted as the light emitting module 200 shown in FIGS. 1A and 1B.
• the substrate 10 has a mounting surface 10us and a lower surface 10Ls, as shown in FIG. 2C.
• the normal direction of the mounting surface 10us is the +Y direction.
• the normal direction of a surface means a direction perpendicular to the surface and a direction away from an object having the surface.
• the substrate 10 has a rectangular flat plate shape, but is not limited to this shape.
• the substrate 10 may have a polygonal, circular, or elliptical flat plate shape, for example.
• the lower surface 10Ls of the substrate 10 is bonded to the first mounting surface 60s1 of the support base 60 via, for example, an inorganic bonding member such as a solder material.
• the substrate 10 may be formed of a material having a thermal conductivity of 10 W/m ⁇ K or more and 2000 W/m ⁇ K or less, for example. With the substrate 10 having such high thermal conductivity, the heat emitted from the laser light source 20 during driving can be effectively transferred to the support base 60 shown in FIGS. 1A to 1C via the substrate 10. Substrate 10 may be formed from the same material as supporting base 60, for example.
• the dimension of the substrate 10 in the X direction may be, for example, 1000 ⁇ m or more and 10000 ⁇ m or less
• the dimension in the Y direction may be, for example, 100 ⁇ m or more and 5000 ⁇ m or less
• the dimension in the Z direction may be, for example, 1000 ⁇ m or more and 20000 ⁇ m or less.
• the laser light source 20 is supported by the mounting surface 10us of the substrate 10, as shown in FIG. 2C.
• the laser light source 20 includes a submount 21 , an edge-emitting semiconductor laser element 22 supported by the submount 21 , a lens support member 23 , and a fast-axis collimating lens 24 .
• the semiconductor laser element 22 is supported by the mounting surface 10us of the substrate 10 via the submount 21.
• the semiconductor laser element 22 is arranged to emit laser light L toward the first reflective surface 30as.
• the lens support member 23 has a shape that straddles the semiconductor laser element 22.
• the lens support member 23 supports the fast axis collimating lens 24 by its end face.
• the components of the laser light source 20 may be treated as components of the light emitting device 100.
• the semiconductor laser element 22 emits laser light L from a rectangular end face.
• the end face extends in the X direction and is a plane parallel to the XY plane
• the laser beam L emitted from the semiconductor laser element 22 in the +Z direction spreads relatively quickly in the YZ plane, and spreads slowly.
• the fast axis direction of the laser beam L is parallel to the Y direction
• the slow axis direction is parallel to the X direction.
• the laser light source 20 emits laser light that is emitted from the semiconductor laser element 22 and transmitted through the fast-axis collimating lens 24.
• the laser light L emitted from the laser light source 20 is collimated in the YZ plane, but not in the XZ plane.
• collimating means not only making the laser beam L into parallel light but also reducing the spread angle of the laser beam L. The specific configuration of the laser light source 20 will be described later.
• the semiconductor laser element 22 included in the laser light source 20 is sealed by the substrate 10, the frame 40, and the cover 50, as shown in FIG. 2F.
• the seal is a hermetic seal.
• the effect of hermetic sealing becomes higher as the wavelength of the laser light emitted from the semiconductor laser element 22 becomes shorter.
• the shorter the wavelength of the laser light the higher the possibility that the emission surface will deteriorate during operation due to dust collection. It is from.
• a surface-emitting type semiconductor laser element such as a VCSEL (Vertical-Cavity Surface-Emitting Laser) element may be used.
• a surface-emitting semiconductor laser device is arranged so that laser light emitted from the semiconductor laser device travels in the +Z direction.
• the first mirror member 30a is supported by the mounting surface 10us of the substrate 10, as shown in FIG. 2C.
• the first mirror member 30a has a uniform cross-sectional shape in the X direction.
• the cross-sectional shape is generally triangular.
• the first mirror member 30a has a lower surface, a back surface, and a slope connecting the lower surface and the back surface.
• the bottom surface is parallel to the XZ plane, and the back surface is parallel to the XY plane.
• the normal direction of the slope is a direction parallel to the YZ plane, making an acute angle with the +Y direction, and making an acute angle with the -Z direction.
• the angle between the lower surface of the first mirror member 30a and the slope is 45°, but is not limited to this angle, and may be, for example, 30° or more and 60° or less.
• the first mirror member 30a has a first reflective surface 30as on the above-mentioned slope.
• the first reflective surface 30as is inclined with respect to the mounting surface 10us of the substrate 10 and faces obliquely upward.
• diagonally upward means a direction forming an angle of 30° or more and 60° or less with the +Y direction.
• the first reflective surface 30as can receive the laser beam L emitted from the laser light source 20, and the normal direction of the first reflective surface 30as forms an angle of 30 degrees or more and 60 degrees or less with the +Y direction.
• the normal direction of the first reflective surface 30as may or may not be parallel to the YZ plane.
• the first reflecting surface 30as reflects the laser light L emitted from the laser light source 20 and changes the traveling direction of the laser light L in a direction away from the mounting surface 10us of the substrate 10.
• the angle between the direction in which the laser beam L leaves the mounting surface 10us of the substrate 10 and the normal direction of the mounting surface 10us may be, for example, 0° or more and 5° or less. Since the angle has a tolerance of 5 degrees, it is not necessary to adjust the position and orientation of the first mirror member 30a as strictly as the position and orientation of the second mirror member 30b.
• the second mirror member 30b is supported by the upper surface 50us of the cover 50, as shown in FIG. 2C.
• the second mirror member 30b has a uniform cross-sectional shape in the X direction.
• the cross-sectional shape is generally trapezoidal.
• the second mirror member 30b has an upper surface, a lower surface, and a slope connecting the upper surface and the lower surface. Each of the top and bottom surfaces are parallel to the XZ plane.
• the dimension of the lower surface in the X direction is equal to the dimension of the upper surface in the X direction.
• the dimension of the lower surface in the Z direction is smaller than the dimension of the upper surface in the Z direction.
• the normal direction of the slope is a direction parallel to the YZ plane, making an acute angle with the -Y direction, and making an acute angle with the +Z direction.
• the angle between the upper surface of the second mirror member 30b and the slope is 45°, but is not limited to this angle, and may be, for example, 30° or more and 60° or less.
• the angle between the upper surface of the second mirror member 30b and the slope may be equal to or different from the angle between the lower surface of the first mirror member 30a and the slope.
• the second mirror member 30b has a second reflective surface 30bs on the above-mentioned slope. At least a portion of the second reflective surface 30bs is located above at least a portion of the first reflective surface 30as. As shown in FIG. 2F, the second reflecting surface 30bs reflects the laser beam L reflected by the first reflecting surface 30as and changes the traveling direction of the laser beam L to the +Z direction.
• a resin layer 32 exists between the lower surface of the second mirror member 30b and the upper surface 50us of the cover 50.
• the resin layer 32 is formed by curing the resin while the lower surface of the second mirror member 30b is in contact with the upper surface 50us of the cover 50 via the uncured resin.
• the resin can be, for example, a thermosetting resin that is cured by heating, or a photocurable resin that is cured by irradiation with ultraviolet or visible light.
• the following active alignment is performed. That is, with the laser light source 20 emitting the laser light L, the position and orientation of the second mirror member 30b are appropriately adjusted so that the second reflective surface 30bs changes the traveling direction of the laser light L in the +Z direction. be done. Such adjustment can be performed after the light emitting device 100 is placed on the first mounting surface 60s1 of the support base 60 shown in FIGS. 1A to 1C, while the second mirror member 30b is held by a holding device.
• the traveling direction of the laser beam L can be adjusted by rotating the second mirror member 30b using the X-axis or the Y-axis as the rotation axis and changing its direction.
• the traveling direction of the laser beam L can be changed up and down.
• the traveling direction of the laser beam L can be changed from side to side, with the traveling direction of the laser beam L being set as the front direction.
• the height of the optical axis of the laser beam L can be adjusted.
• the height of the optical axis of the laser beam L is reduced, and by shifting the second mirror member 30b along the -Z direction, the height of the optical axis of the laser beam L is reduced.
• the height of the optical axis can be increased.
• the optical axis of the laser beam means an axis passing through the center of the far-field pattern of the laser beam. Laser light traveling on the optical axis exhibits a peak intensity in the light intensity distribution of the far field pattern.
• the normal direction of the light incident surface is parallel to the -Z direction
• the normal direction of the light exit surface is parallel to the YZ plane and makes an acute angle with the +Y direction or -Y direction. This is a direction that makes an acute angle with the +Z direction. Due to the light incidence plane and the refraction at the light incidence plane which are not parallel to each other, the wedge can change the traveling direction of the laser light L passing through it. However, when using a wedge, in order to direct the traveling direction of the laser beam L in the +Z direction, a plurality of wedges whose normal directions of the light emitting surfaces are different from each other are prepared, and from the plurality of wedges, the normal direction of the light emitting surface is You need to choose a wedge that has the proper orientation.
• the second mirror member 30b by arranging the second mirror member 30b at an appropriate position and orientation, it is possible to determine whether the traveling direction of the laser beam L emitted from the laser light source 20 is deviated from the +Z direction. Regardless, the traveling direction of the laser beam L reflected by the second reflective surface 30bs can be directed to the +Z direction. In this embodiment, it is not necessary to prepare a plurality of second mirror members 30b whose upper surfaces and slopes have different angles, and to select a second mirror member 30b having an appropriate angle from among the plurality of second mirror members 30b. .
• the pedestal may be formed from at least one selected from the group consisting of, for example, glass, quartz, synthetic quartz, sapphire, ceramics, plastic, silicon, metal, silicone resin, and dielectric material.
• the reflective surface may be formed from a reflective material, such as a dielectric multilayer and a metallic material. These reflective surfaces correspond to the first reflective surface 30as and second reflective surface 30bs shown in FIG. 2B, the reflective surface 94s shown in FIG. 1A, and the reflective surfaces 94as to 94cs shown in FIG. 1D.
• the first mirror member 30a, the second mirror member 30b, and the mirror members 94, 94a to 94c may be provided with a pedestal having an inclined surface, and the pedestal may be made of the above-mentioned reflective material.
• the slopes of the table correspond to the first reflective surface 30as, the second reflective surface 30bs, and the reflective surfaces 94s, 94as to 94cs.
• the frame 40 is located around the mounting surface 10us of the board 10 as shown in FIG. 2B, and supports the cover 50 as shown in FIG. 2A.
• the frame body 40 surrounds the laser light source 20 and the first mirror member 30a when viewed from the +Y direction, that is, when viewed from above.
• the frame body 40 has a protrusion 40p that protrudes inward from the inner surface.
• the protrusion 40p protrudes toward both side surfaces and the back surface of the submount 21.
• the protrusion 40p may further protrude toward the front of the submount 21.
• the protruding portion 40p may protrude only from both sides.
• the front surface of the submount 21 is located on the same side as the emission surface of the semiconductor laser element 22, and the back surface of the submount 21 is located on the opposite side to the emission surface of the semiconductor laser element 22. Both sides of the submount 21 connect the front and back sides of the submount 21.
• the frame 40 has a first upper surface 40us1 and a second upper surface 40us2.
• the second upper surface 40us2 is the upper surface of the protrusion 40p, is located below the first upper surface 40us1, and is surrounded by the first upper surface 40us1 when viewed from above.
• the second upper surface 40us2 has a roughly U-shape.
• the first upper surface 40us1 is provided with a first bonding area 44a and an outer area 46 surrounding the first bonding area 44a.
• Each of the first bonding region 44a and the outer region 46 has a generally rectangular annular shape.
• the first bonding region 44a improves bonding strength when bonding the cover 50 and the frame 40 via an inorganic bonding member such as a solder material.
• the outer region 46 prevents the inorganic bonding material that joins the cover 50 from flowing out beyond the outer region 46 .
• the first bonding region 44a and the outer region 46 surround the laser light source 20 and the first mirror member 30a when viewed from above, as shown in FIG. 2E.
• the first upper surface 40us1 is further provided with a first conductive region 42a and a second conductive region 42b that are electrically insulated from each other in the ⁇ Z direction from the first bonding region 44a and the outer region 46.
• a third conductive region 42c and a fourth conductive region 42d that are electrically insulated from each other are provided on the second upper surface 40us2.
• the third conductive region 42c is electrically connected to the first conductive region 42a via internal wiring
• the fourth conductive region 42d is electrically connected to the second conductive region 42b via internal wiring.
• the laser light source 20 and the first mirror member 30a are located between a portion of the third conductive region 42c extending in the Z direction and a portion of the fourth conductive region 42d extending in the Z direction.
• the third conductive region 42c is electrically connected to the semiconductor laser element 22 via the upper surface of the submount 21 and some wires 40w shown in FIG. 2B.
• the fourth conductive region 42d is electrically connected to the semiconductor laser element 22 via the remaining wire 40w shown in FIG. 2B. Therefore, power can be supplied to the laser light source 20 by applying a voltage between the first conductive region 42a and the second conductive region 42b.
• the frame 40 further has a first lower surface 40Ls1 and a second lower surface 40Ls2, as shown in FIG. 2D.
• the second lower surface 40Ls2 partially has the lower surface of the protrusion 40p, is located above the first lower surface 40Ls1, and is surrounded by the first lower surface 40Ls1 when viewed from the ⁇ Y direction, that is, when viewed from the bottom.
• the second lower surface 40Ls2 has a generally rectangular annular shape. Part or all of the substrate 10 shown in FIG. 2C is housed in a space surrounded by a step between the first lower surface 40Ls1 and the second lower surface 40Ls2.
• the outer periphery of the second lower surface 40Ls2 surrounds the outer periphery of the mounting surface 10us of the board 10 in a top view
• the inner periphery of the second lower surface 40Ls2 surrounds the outer periphery of the mounting surface 10us of the board 10 in a top view. It is surrounded by the outer periphery of the mounting surface of 10 us.
• a second bonding region 44b is provided on the entire first lower surface 40Ls1.
• the second bonding region 44b improves the bonding strength when bonding the supporting base 60 and the frame 40 shown in FIGS. 1A to 1C via an inorganic bonding member such as a solder material.
• a third bonding region 44c is provided on the entire second lower surface 40Ls2.
• the third bonding region 44c is bonded to the peripheral area of the mounting surface 10us of the substrate 10 via an inorganic bonding member such as a brazing material.
• the third bonding region 44c improves the bonding strength when bonding the substrate 10 and the frame 40 via the inorganic bonding member.
• the melting point of the brazing material is higher than that of the solder material.
• the heat applied to the solder material may cause the substrate 10 and the frame 40 to be bonded together.
• the possibility that the frame body 40 will come loose can be reduced.
• the second bonding region 44b is provided on the entire first lower surface 40Ls1, but the second bonding region 44b may be provided on a part of the first lower surface 40Ls1.
• the third bonding region 44c is provided on the entire second lower surface 40Ls2, but the third bonding region 44c may be provided on a part of the second lower surface 40Ls2.
• the second bonding region 44b may not be provided on the first lower surface 40Ls1, and the third bonding region 44c may not be provided on the second lower surface 40Ls2.
• the first lower surface 40Ls1 of the frame 40 is located on the same plane as the lower surface 10Ls of the substrate 10.
• the first lower surface 40Ls1 of the frame 40 may be located above the lower surface 10Ls of the substrate 10.
• the first lower surface 40Ls1 of the frame body 40 may be located below the lower surface 10Ls of the substrate 10, as long as it does not interfere with joining the substrate 10 and the supporting base 60 via the inorganic joining member. Good too.
• the frame 40 may be formed from the above-mentioned ceramics, for example, similar to the support base 60 shown in FIGS. 1A and 1B.
• the dimension of the frame 40 in the X direction may be, for example, 3 mm or more and 15 mm or less
• the maximum dimension in the Y direction may be, for example, 1 mm or more and 5 mm or less
• the dimension in the Z direction may be, for example, 3 mm or more and 30 mm or less.
• Conductive regions 42a-42d, bonding regions 44a-44c, and outer region 46 may be formed from at least one metal material selected from the group consisting of, for example, Ag, Cu, W, Au, Ni, Pt, and Pd. .
• the conductive regions 42a to 42d, the bonding region 44a, and the outer region 46 can be formed, for example, by providing a metal film over the entire upper surfaces 40us1 and 40us2 and patterning the metal film by etching.
• the cover 50 has an upper surface 50us and a lower surface 50Ls, as shown in FIG. 2B.
• the lower surface 50Ls of the cover 50 faces the mounting surface 10us of the substrate 10, and the upper surface 50us of the cover 50 is located on the opposite side of the lower surface 50Ls of the cover 50.
• the lower surface 50Ls of the cover 50 is also referred to as an "opposing surface.”
• the cover 50 is located above the semiconductor laser element 22 and the first mirror member 30a. The cover 50 transmits the laser beam L reflected by the first reflective surface 30as.
• the cover 50 has a light shielding film 52 on the lower surface 50Ls at least around the light-transmitting region 50t through which the laser beam L is transmitted.
• the light-transmitting region 50t has a rectangular shape, but is not limited to this shape.
• the shape of the transparent region 50t may be, for example, circular or elliptical.
• the cover 50 may have a light-shielding film 52 on at least a portion of the periphery of the light-transmitting region 50t on the lower surface 50Ls.
• the light shielding film 52 may be provided in at least part of the following regions of the lower surface 50Ls. This region is a region on the lower surface 50Ls that is adjacent to the remaining portion other than the above-mentioned portion among the ends of the light-transmitting region 50t.
• the light shielding film 52 reduces the possibility that stray light other than the laser beam L generated inside the light emitting device 100 leaks to the outside of the light emitting device 100.
• the light shielding film 52 further reduces the possibility that ultraviolet rays or visible light will reach the laser light source 20 when forming the resin layer 32 shown in FIG. 2F by irradiating ultraviolet rays or visible light.
• the light shielding film 52 further reduces the possibility that the return light of the laser light L emitted to the outside of the light emitting device 100 will reach the laser light source 20. If irradiation by ultraviolet rays, visible light, or return light can be reduced, the laser light source 20 will be less likely to be damaged.
• the light-shielding film 52 is provided over the entire region of the lower surface 50Ls other than the light-transmitting region 50t.
• the light shielding film 52 provided in this manner further reduces the possibility that the above stray light will leak to the outside of the light emitting device 100 and the possibility that the above ultraviolet rays or visible light or the above return light will reach the laser light source 20. .
• the cover 50 not only the light-transmitting region 50t but also the portion that overlaps the light-transmitting region 50t when viewed from above transmits the laser beam L.
• the portion of the cover 50 that transmits the laser beam L has a transmittance of, for example, 60% or more, preferably 80% or more.
• the remaining portion of the cover 50 may or may not have such translucency.
• the cover 50 may be formed from the above-mentioned light-transmitting material, for example, similar to the condenser lens 70 shown in FIGS. 1A and 1B.
• the dimension of the cover 50 in the X direction may be, for example, 3 mm or more and 15 mm or less
• the dimension in the Y direction may be, for example, 0.1 mm or more and 1.5 mm or less
• the dimension in the Z direction may be, for example, 1 mm or more and 20 mm or less.
• the light-shielding film 52 can be formed from the aforementioned metal material, for example, similarly to the conductive regions 42a to 42d, the bonding regions 44a to 44c, and the outer region 46.
• the light shielding film 52 is formed, for example, by providing a metal film over the entire lower surface 50Ls of the cover 50 and patterning the metal film by etching, similarly to the conductive regions 42a to 42d, the bonding region 44a, and the outer region 46. can be done.
• the peripheral area of the light shielding film 52 is bonded to the first bonding area 44a provided on the first upper surface 40us1 of the frame body 40 via an inorganic bonding member such as a solder material.
• an inorganic bonding member such as a solder material.
• the cover 50 has a flat plate shape, but is not limited to this shape.
• the cover 50 may have a box shape with an open bottom instead of a flat plate shape.
• the cover 50 having such a shape is supported by the mounting surface 10us of the substrate 10 and accommodates the laser light source 20 and the first mirror member 30a.
• the cover 50 having a box shape with an open bottom and the frame 40 may be joined, and the laser light source 20 and the first mirror member 30a may be surrounded by the cover 50 and the frame 40.
• the light emitting device 100 that can reduce the deviation between the traveling direction of the laser beam L and the designed traveling direction.
• a plurality of laser beams L obtained by emitting laser beams L from each of the plurality of light emitting devices 100 can be effectively combined. can be made to enter the optical fiber 80.
• the light emitting device 100 can be manufactured, for example, as follows.
• the substrate 10, the laser light source 20, the first mirror member 30a, the second mirror member 30b, the frame 40, the plurality of wires 40w, and the cover 50 are prepared.
• the frame 40 is joined to the substrate 10.
• the laser light source 20 and the first mirror member 30a are provided on the mounting surface 10us of the substrate 10.
• a plurality of wires 40w for feeding power to the laser light source 20 are provided.
• the cover 50 is joined to the frame 40.
• active alignment is performed with the lower surface of the second mirror member 30b in contact with the upper surface 50 us of the cover 50 via the uncured resin.
• the resin is cured to form a resin layer 32 between the second mirror member 30b and the cover 50.
• FIG. 3 is a diagram schematically illustrating the configuration of a DDL device according to an exemplary embodiment of the present disclosure.
• a DDL device 1000 shown in FIG. 3 includes a plurality of light emitting modules 200 according to this embodiment, a processing head 300, and an optical transmission fiber 250 connecting the light emitting modules 200 to the processing head 300.
• the number of light emitting modules 200 is four, but is not limited to this number.
• the number of light emitting modules 200 may be one, two or three, or a plurality of five or more.
• the number of light emitting devices 100 included in each light emitting module 200 is determined depending on the required light output or irradiance.
• the wavelength of the laser light emitted from the light emitting device 100 may also be selected depending on the material to be processed. For example, when processing metals such as copper, brass, and aluminum, a semiconductor laser element having a center wavelength in the range of 350 nm or more and 550 nm or less can be suitably employed.
• the wavelengths of the laser beams emitted from each light emitting device 100 do not need to be the same, and laser beams with different center wavelengths may be superimposed. Further, even when using a laser beam whose center wavelength is outside the range of 350 nm or more and 550 nm or less, it is possible to obtain the effects of the present invention.
• an optical fiber 80 extends from each of the plurality of light emitting modules 200.
• a plurality of optical fibers 80 thus obtained are coupled to an optical transmission fiber 250 by an optical multiplexer 230.
• the optical multiplexer 230 may be, for example, a TFB (Tapered Fiber Bundle).
• the processing head 300 converges and irradiates the object 400 with laser light emitted from the light emitting end of the optical fiber 80 .
• one DDL device 1000 includes M light emitting modules 200 and each light emitting module 200 includes N light emitting devices 100
• the maximum A laser beam with an optical power of P ⁇ N ⁇ M watts can be focused onto the object 400.
• N is an integer of 2 or more
• FIG. 4A is an exploded perspective view of the laser light source 20.
• FIG. 4B is a cross-sectional view of the laser light source 20 parallel to the YZ plane. Each component of the laser light source 20 will be explained below.
• the submount 21 has an upper surface 21us and a lower surface 21Ls that are parallel to the XZ plane.
• a metal film is provided on each of the upper surface 21us and the lower surface 21Ls.
• the metal film provided on the upper surface 21us improves the bonding strength when bonding the semiconductor laser element 22 and the lens support member 23 to the submount 21 using an inorganic bonding member.
• the metal film provided on the upper surface 21us may be further used to supply power to the semiconductor laser element 22.
• the metal film provided on the lower surface 21Ls improves the bonding strength when bonding the substrate 10 and the laser light source 20 shown in FIG. 2C via the inorganic bonding member.
• the metal films provided on each of the upper surface 21us and the lower surface 21Ls also serve to transmit heat generated by the semiconductor laser element 22 during driving to the substrate 10 via the submount 21.
• Submount 21 may be formed, for example, from the ceramics, metal materials, or metal matrix composites described above, similar to support substrate 60 shown in FIGS. 1A and 1B.
• the semiconductor laser element 22 is supported by the upper surface 21us of the submount 21, as shown in FIG. 4A.
• the semiconductor laser element 22 has an emission surface 22e on one of two end faces intersecting in the Z direction, and emits laser light in the +Z direction from the emission surface 22e.
• the laser beam spreads at different speeds in the YZ plane and the XZ plane as it travels in the +Z direction. Laser light spreads relatively quickly in the YZ plane and spreads relatively slowly in the XZ plane.
• the laser beam spot has an elliptical shape in the far field, with the Y direction being the long axis and the X direction being the short axis in the XY plane.
• the semiconductor laser element 22 can emit violet, blue, green, or red laser light in the visible region, or infrared or ultraviolet laser light in the invisible region.
• the emission peak wavelength of the violet light is preferably within the range of 400 nm or more and 420 nm or less, and more preferably within the range of 400 nm or more and 415 nm or less.
• the emission peak wavelength of blue light is preferably in a range of greater than 420 nm and less than 495 nm, more preferably in a range of greater than or equal to 440 nm and less than 475 nm.
• the emission peak wavelength of green light is preferably in a range of greater than 495 nm and less than 570 nm, more preferably in a range of greater than or equal to 510 nm and less than or equal to 550 nm.
• the emission peak wavelength of red light is preferably in the range of 605 nm or more and 750 nm or less, and more preferably in the range of 610 nm or more and 700 nm or less.
• a laser diode containing a nitride semiconductor material can be mentioned.
• the nitride semiconductor material for example, GaN, InGaN, and AlGaN can be used.
• Examples of the semiconductor laser element 22 that emits red laser light include laser diodes containing InAlGaP-based, GaInP-based, GaAs-based, and AlGaAs-based semiconductor materials.
• the lens support member 23 is supported by the upper surface 21us of the submount 21, as shown in FIG. 4A.
• the lens support member 23 has two columnar parts 23a and a connecting part 23b located between the two columnar parts 23a and connecting the two columnar parts 23a.
• the two columnar portions 23a are located on both sides of the semiconductor laser device 22, and the connecting portion 23b is located above the emission surface 22e of the semiconductor laser device 22.
• the lens support member 23 supports the fast-axis collimator lens 24 by end surfaces 23as of the two columnar portions 23a.
• the lens support member 23 is positioned so as to straddle the semiconductor laser element 22 and does not prevent the laser light emitted from the semiconductor laser element 22 from entering the fast-axis collimating lens 24 .
• the lens support member 23 may be formed from the aforementioned ceramics, for example, similar to the support base 60 shown in FIGS. 1A and 1B.
• the lens support member 23 may be formed from the above-mentioned light-transmitting material, for example, similar to the condenser lens 70 shown in FIGS. 1A and 1B.
• Lens support member 23 may be formed from at least one alloy selected from the group consisting of Kovar and CuW, for example.
• the lens support member 23 may be made of Si, for example.
• the fast-axis collimating lens 24 may be, for example, a cylindrical lens having a uniform cross-sectional shape in the X direction, as shown in FIG. 4A.
• the fast-axis collimating lens 24 has a flat surface on the light incidence side and a convex curved surface on the light exit side.
• the convex curved surface has a curvature in the YZ plane.
• the focal point of the fast-axis collimating lens 24 substantially coincides with the center of the light emitting point of the emission surface 22e of the semiconductor laser element 22.
• the fast-axis collimating lens 24 collimates the laser light emitted from the emission surface 22e of the semiconductor laser element 22 in the +Z direction in the YZ plane.
• Fast-axis collimating lens 24 may be formed from the translucent material described above, for example, similar to condenser lens 70 shown in FIGS. 1A and 1B.
• the fast axis collimating lens 24 is located between the mounting surface 10us of the substrate 10 and the lower surface 50Ls of the cover 50, and is located on the optical path of the laser beam L. Since the fast-axis collimating lens 24 is arranged inside the sealed space formed by the substrate 10, the frame 40, and the cover 50, it can collimate the laser beam L before it widely spreads. . Therefore, it becomes possible to make the fast-axis collimating lens 24 smaller.
• a collimating lens that collimates the laser beam L emitted from the semiconductor laser element 22 not only in the YZ plane but also in the XZ plane may be used. In that case, it is not necessary to provide the slow axis collimating lenses 92, 92a, and 92b in the light emitting module 200 shown in FIGS. 1A to 1C and the light emitting module 210 shown in FIG. 1D.
• the present disclosure includes the light emitting device described in the following items.
• a support base having a plurality of mounting surfaces aligned in a first direction;
• a plurality of light emitting devices wherein a corresponding light emitting device is arranged on each of the plurality of mounting surfaces, each of which includes: a board having a mounting surface; a semiconductor laser element supported by the mounting surface; a first mirror member supported by the mounting surface; a cover that has an opposing surface that faces the mounting surface of the substrate and an upper surface that is located on the opposite side of the opposing surface, and that is located above the semiconductor laser element and the first mirror member; a second mirror member supported by the upper surface of the cover; a plurality of light emitting devices; a plurality of third mirror members; a condensing lens, Equipped with The first mirror member has a first reflective surface, the first reflective surface is inclined with respect to the mounting surface and faces obliquely upward,
• the second mirror member has a second reflective surface, at least a portion of the second reflective surface is located above at least a portion of the first reflective surface,
• the light emitting device of the present disclosure can be used particularly to combine multiple laser beams to realize high-output laser beams. Further, the light emitting device of the present disclosure can be used, for example, in industrial fields where a high-power laser light source is required, such as cutting of various materials, drilling, local heat treatment, surface treatment, metal welding, and 3D printing. .
• Substrate 10us Mounting surface 10Ls: Bottom surface 20: Laser light source 21: Submount 21Ls: Bottom surface 21us: Top surface 22: Semiconductor laser element 22e: Emission surface 23: Lens support member 23a: Columnar portion 23as: End surface 23b: Connection portion 24 : Fast axis collimating lens 30a: First mirror member 30as: First reflective surface 30b: Second mirror member 30bs: Second reflective surface 32: Resin layer 40: Frame 40us1: First top surface 40us2: Second top surface 40Ls1: First 1 lower surface 40Ls2: second lower surface 40p: protrusion 40w: wire 42a: first conductive region 42b: second conductive region 42c: third conductive region 42d: fourth conductive region 44a: first bonding region 44b: second bonding region 44c: Third bonding area 46: Outer area 50: Cover 50us: Top surface 50Ls: Bottom surface 50t: Transparent area 52: Light shielding film 60, 62: Support base 60-1, 62-1: First portion

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• 2023
  • 2023-07-24 US US18/998,687 patent/US20260045773A1/en active Pending
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  • 2023-07-24 KR KR1020257006009A patent/KR20250047320A/ko active Pending
  • 2023-07-24 CN CN202380055779.4A patent/CN119631254A/zh active Pending
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  • 2023-07-24 EP EP23846464.8A patent/EP4564617A1/en active Pending

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