WO2024022121A1

WO2024022121A1 - Substrate etching method, housing assembly and electronic device

Info

Publication number: WO2024022121A1
Application number: PCT/CN2023/107280
Authority: WO
Inventors: 冯骏
Original assignee: Oppo广东移动通信有限公司
Priority date: 2022-07-26
Filing date: 2023-07-13
Publication date: 2024-02-01
Also published as: CN115259679B; CN115259679A

Abstract

Disclosed in the present application are a substrate etching method, a housing assembly and an electronic device. The substrate etching method comprises: providing a substrate; performing first patterning processing on the substrate to form a prefabricated pattern on the substrate; forming a mask layer on part of a surface of the prefabricated pattern; and performing, by using an etching liquid, second patterning processing on the substrate on which the mask layer is formed, so as to obtain the substrate having a target pattern, wherein the target pattern comprises a plurality of bulges arranged at intervals, adjacent bulges form a patterned recess, and the patterned recess is of an asymmetrical structure. By means of the above-mentioned method, a substrate having an asymmetric directional etched pattern can be obtained, and the substrate having the asymmetric directional etched pattern prepared in the present application is low-cost, is easy to operate, and is suitable for use in consumer electronics and industries.

Description

Etching methods for substrates, housing components and electronic devices

This application claims priority from Chinese patent application No. 202210894728.8 filed on July 26, 2022, the entire content of which is hereby incorporated by reference.

【Technical field】

The present application relates to the technical field of etching of electronic equipment, and in particular to an etching method of a substrate, a housing assembly and an electronic equipment.

【Background technique】

Generally, the technology for high-precision directional etching on glass is dry etching, such as reactive plasma etching or high-energy particle beam etching. Although the use of dry etching technology to prepare patterned glass has the advantage of high processing accuracy, there are still requirements for precision. In lower scenarios, dry etching technology has the problems of slow processing efficiency and high equipment costs.

[Content of the invention]

This application provides an etching method for a substrate, a housing assembly and an electronic device, which can improve the processing efficiency and reduce processing costs in application scenarios where processing fineness is required at the micron level.

In order to solve the above technical problems, one technical solution adopted by this application is to provide a substrate etching method, which includes: providing a substrate; performing a first patterning process on the substrate to form a prefabricated pattern on the substrate; A shielding layer is formed on part of the surface of the prefabricated pattern; and the substrate forming the shielding layer is subjected to a second patterning process with an etching liquid to obtain the substrate with a target pattern, the target pattern including a plurality of intervals The protrusions are provided, and patterned grooves are formed adjacent to the protrusions, and the patterned grooves have an asymmetric structure.

In order to solve the above technical problems, another technical solution adopted in this application is to provide a housing assembly, including a substrate, the substrate having at least one target pattern, the target pattern including a plurality of protrusions arranged at intervals, adjacent The protrusions are formed with patterned grooves, and the patterned grooves have an asymmetric structure.

In order to solve the above technical problems, another technical solution adopted by this application is to provide an electronic device, including a housing component and a functional component. The housing component defines an accommodation space, and the functional components are accommodated in the accommodation space, wherein the housing component is the above-mentioned housing component.

[Picture description]

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without exerting creative efforts.

Figure 1 is a flow chart of an etching method provided by some embodiments of the present application.

FIG. 2 is a flowchart of step S20 in FIG. 1 .

Figure 3 is a schematic structural diagram of an evaporation device provided by some embodiments of the present application.

Figure 4 is a schematic structural diagram of an etching device provided by some embodiments of the present application.

FIG. 5 is a flowchart of step S40 in FIG. 1 .

Figure 6 is a rendering of a substrate with a target pattern prepared under different θ angles and centrifugal forces provided by some embodiments of the present application.

Figure 7 is a schematic structural diagram of an electronic device provided by some embodiments of the present application.

【Detailed ways】

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the scope of protection of this application.

In the description of this application, it should be understood that the terms “center”, “middle”, “inner”, “outer”, “upper”, “lower”, “front”, “back”, “left” and “right” The directions or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. are based on the directions and positions shown in the accompanying drawings. The positional relationship is only for the convenience of describing the present application and simplifying the description, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present application. Furthermore, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, features defined as “first” and “second” may explicitly or implicitly include one or more of the described features. In the description of this application, "plurality" means two or more than two, unless otherwise explicitly and specifically limited.

This application is based on the inventor's discovery and understanding of the following facts and problems:

High-precision directional etching technology on glass is generally dry etching technology (such as reactive plasma etching, high-energy particle beam etching). Although the use of dry etching technology to prepare patterned glass has the advantage of high processing accuracy, dry etching technology has the problems of slow processing efficiency and high equipment costs in scenarios with lower precision requirements.

When wet etching glass, due to the use of chemical ion solutions that have a corrosive effect on the glass, the diffusion of ions has no direction preference, so the etching is isotropic and the direction cannot be controlled.

Based on the above findings, in a first aspect, some embodiments of the present application provide a method for etching a substrate, including: providing a substrate; performing a first patterning process on the substrate to form a prefabricated pattern on the substrate; Form a shielding layer on part of the surface of the prefabricated pattern; and perform a second patterning process on the substrate on which the shielding layer is formed using an etching liquid to obtain the substrate with a target pattern, where the target pattern includes a plurality of There are protrusions arranged at intervals, and patterned grooves are formed adjacent to the protrusions, and the patterned grooves have an asymmetric structure.

In one embodiment, performing a first patterning process on the substrate, and forming a prefabricated pattern on the substrate includes: performing a first patterning process on the substrate through etching technology, so that the prefabricated pattern The pattern has a plurality of protrusions arranged at intervals, and first grooves are formed adjacent to the protrusions.

In one embodiment, the substrate is subjected to a first patterning process by etching technology, so that the prefabricated pattern has a plurality of protrusions arranged at intervals, and a third protrusion is formed adjacent to the protrusion. A groove includes: cleaning treatment, cleaning and drying the substrate; leveling treatment, coating photoresist on the surface of the substrate; pre-baking treatment, removing part of the photoresist through pre-baking Solvent; Post-exposure baking treatment, exposing the pre-baked product, and post-baking the exposed product to further solidify the photoresist; Development hardening treatment, developing and hardening the post-baked product film treatment to form a photoresist mask; etching treatment to etch the substrate forming the photoresist mask to form the prefabricated pattern on the substrate; and glue removal treatment to remove the substrate Apply remaining photoresist.

In one embodiment, the first groove includes a first inner wall and a second inner wall, and the shielding layer is provided on the raised surface and the first inner wall.

In one embodiment, the first groove includes a first inner wall and a second inner wall, and the shielding layer is provided on the raised surface and the first inner wall and the second inner wall, wherein on the shielding layer of the first inner wall The thickness is greater than the thickness of the shielding layer provided on the second inner wall.

In one embodiment, the substrate on which the shielding layer is formed is etched by an etching device. The etching device includes a carrying mechanism and an etching liquid supply mechanism. The carrying mechanism has a central rotating shaft and a receiving groove. , the etching liquid supply mechanism includes at least one nozzle, the nozzle is located above the carrying mechanism; the etching liquid is used to perform a second patterning process on the substrate forming the shielding layer to obtain a target pattern. The step of forming the substrate includes: placing the substrate forming the shielding layer into the accommodation groove; causing the bearing mechanism to rotate around the central axis; and the at least one nozzle forming the shielding layer The substrate of the first layer is sprayed with the etching liquid to form a second groove on the second inner wall, and the depth of the second groove is different from the depth of the first groove.

In one embodiment, the ratio of the square of the rotation speed of the substrate forming the shielding layer to the position of the accommodating groove ranges from 16 m·s ^-2 to 1000 m·s ^-2 .

In one embodiment, the substrate is made of glass, the etching solution includes a 40% concentration NH ₄ F solution and a 49% concentration HF, the 40% concentration NH ₄ F solution and the 49% concentration The volume ratio of the concentration of HF is 6:1, and the flow rate of the nozzle is 0.2 liters/hour to 2 liters/hour.

In one embodiment, the material of the shielding layer is Au, Ag, Cu or Cr, and the thickness of the shielding layer is 1/20 to 1/2 of the target etching depth of the target pattern.

In one embodiment, the thickness of the shielding layer is 1/10 to 1/5 of the target etching depth of the target pattern.

In one embodiment, the material of the shielding layer is a low-activity metal and the thickness of the shielding layer is 0.5um to 5um.

In one embodiment, the thickness of the shielding layer is 1 um to 2 um.

In one of the embodiments, forming a shielding layer on a part of the surface of the prefabricated pattern includes: placing the substrate on which the prefabricated pattern is formed in an evaporation device, and the substrate on which the prefabricated pattern is formed and the The angle θ between the placement positions of the evaporation sources in the evaporation device ranges from 20° to 75°; the evaporation sources evaporate the evaporation material in the direction of the substrate forming the prefabricated pattern.

In one embodiment, the angle θ between the substrate forming the prefabricated pattern and the placement position of the evaporation source in the evaporation device ranges from 45° to 65°.

In a second aspect, some embodiments of the present application provide a housing assembly, including a base plate having at least one target pattern, the target pattern including a plurality of protrusions arranged at intervals, adjacent to the protrusions. Patterned grooves are formed thereon, and the patterned grooves have an asymmetric structure.

In one embodiment, the patterned groove has a first groove and a second groove, and the depth of the first groove is different from the depth of the second groove, so that the patterned groove The slot is an asymmetric structure.

In one embodiment, the patterned groove further includes a third groove spaced apart from the first groove and the second groove, and the depth of the third groove is the same as the depth of the first groove. The depth and the depth of the second groove are different.

In one embodiment, the at least one target pattern is respectively disposed on different surfaces of the substrate.

In one embodiment, the at least one target pattern is respectively disposed on the same surface of the substrate.

In the third aspect, some embodiments of the present application provide an electronic device, including: a housing component and a functional component, the housing component defines an accommodation space; the functional component is accommodated in the accommodation space ; Wherein, the housing component is the housing component provided by the embodiment of the second aspect.

Some embodiments of the present application provide a substrate etching method for directional wet etching of the substrate. Please refer to Figure 1. The substrate etching method includes:

Step S10: Provide a substrate 10.

In some embodiments of the present application, the substrate 10 can be applied to, but is not limited to, a housing component of an electronic device. The material of the substrate 10 can be glass, silicon, silicon nitride, metal, etc., and can be selected according to the application scenario. The thickness of the substrate 10 is not limited and can be selected as needed.

Step S20: Perform a first patterning process on the substrate 10 to form the prefabricated pattern 100 on the substrate 10.

In some embodiments of the present application, the first patterning process on the substrate 10 may be etching technology (such as wet etching technology). In some embodiments, it may also be combined with photolithography technology. Please also refer to Figure 2, Steps S20 can include:

S21: Cleaning process, cleaning and drying the substrate 10.

S22: glue leveling process, coating the photoresist 30 on the surface of the substrate 10.

Among them, the photoresist 30 can be a positive photoresist or a negative photoresist, which can be selected according to needs.

S23: pre-baking process, removing part of the solvent in the photoresist 30 through pre-baking.

Among them, the baking method uses infrared radiation heating or hot air circulation heating, and the baking equipment can be an oven or a tunnel furnace.

S24: Post-exposure baking process, the pre-baked product is exposed, and the exposed product is post-baked to further solidify the photoresist 30.

Wherein, the exposure light source is ultraviolet light, which can be a mercury lamp, a halogen lamp or an ultraviolet laser (such as a laser with a wavelength of 255nm or 355nm, etc.). The photomask 50 used for exposure is designed and manufactured according to the pattern requirements. After exposure, the product is post-baked to further remove moisture in the photoresist 30 disposed on the substrate 10 .

S25: Develop and harden the film. The post-baked product is developed and hardened to form a photoresist mask 40 .

During the development process, the unexposed area will be developed, and a pattern will be obtained after development. The pattern area will shield and protect the surface of the substrate 10, and the developed product will be baked to harden the film to form a photoresist mask. Plate 40.

S26: Etching process, etching the substrate 10 on which the photoresist mask 40 is formed, and forming the prefabricated pattern 100 on the substrate 10.

In some embodiments, the substrate 10 is etched through a wet etching process to obtain the prefabricated pattern 100. The prefabricated pattern 100 includes a plurality of protrusions 120 and a plurality of first grooves 140, and adjacent protrusions 120 are formed with first grooves. slot 140.

S27: Glue removal process: remove the remaining photoresist on the substrate 10, clean the substrate 10 to make the product surface clean and free of water stains, and finally obtain the substrate 10 with the prefabricated pattern 100.

Step S30: Form the shielding layer 20 on part of the surface of the prefabricated pattern 100.

The shielding layer 20 is formed on part of the surface of the prefabricated pattern 100 to expose part of the inner wall of the prefabricated pattern 100. The shielding layer 20 is provided on the surface of the plurality of protrusions 120 and part of the inner walls of the plurality of first grooves 140. In some embodiments , the first groove 140 includes a first inner wall 141 and a second inner wall 142 , and the shielding layer 20 is disposed on the surface of the protrusion 112 and the first inner wall 141 of the first groove 140 . In other embodiments, the shielding layer 20 is disposed on the surfaces of the plurality of protrusions 120 and the first inner walls 141 and the second inner walls 142 of the plurality of first grooves 140 , and the thickness of the shielding layer 20 is disposed on the first inner wall 141 is greater than the thickness of the shielding layer 20 provided on the second inner wall 142. Therefore, in the subsequent etching process, the shielding layer 20 provided on the second inner wall 142 is etched away before the shielding layer 20 provided on the first inner wall 141, and then further The second inner wall 142 is etched, but the first inner wall 141 is not etched.

The shielding layer 20 is used to prevent or slow down the etching liquid from etching the surface of the substrate 10 shielded by the shielding layer 20, so that part of the inner wall of the prefabricated pattern 100 is etched, thereby forming asymmetric patterned grooves. The material of the shielding layer 20 is related to the substrate 10 and the etching liquid. In some embodiments of the present application, the material of the substrate 10 is glass, and the material of the shielding layer 20 is a low-activity metal, such as Au, Ag, Cu or Cr. The thickness of the shielding layer 20 is 1/20 to 1/2 of the target etching depth h of the patterned groove. If the thickness of the shielding layer 20 is too large, for example, exceeds 1/2 of the target etching depth h of the patterned groove, it will Resulting in a waste of material, if the thickness of the shielding layer 20 is too small, for example, less than 1/20 of the target etching depth h of the patterned groove, the subsequent base etching process will be During the etching process of the plate 10, the patterned grooves have not yet been obtained, and the shielding layer 20 has been dissolved and will not have a shielding effect. In some embodiments, the thickness of the shielding layer 20 is 1/10 to 1/5 of the target etching depth h of the patterned grooves. In an application scenario, the target etching depth h of the patterned grooves is 10 μm, then the shielding layer The thickness of the shielding layer 20 is 0.5 μm to 5 μm. In other embodiments, the thickness of the shielding layer 20 is 1 μm to 2 μm.

In a specific implementation, the shielding layer 20 can be formed through oblique angle evaporation technology, and the shielding effect of the prefabricated pattern 100 of the substrate 10 is used to obtain the prefabricated pattern 100 with the shielding layer 20 on one side of the inner wall. The substrate 10 on which the prefabricated pattern 100 is formed is placed into the evaporation device 100 as shown in Figure 3. The evaporation device 100 includes a box 1, an umbrella stand 2 and an evaporation source 3. The box 1 is used to place the umbrella stand 2 and The evaporation source 3 and the umbrella frame 2 are hemispherical. The umbrella frame 2 is arranged at the upper end of the box 1. Mounting holes (not shown) are evenly opened in the annular areas of different heights on the surface of the umbrella frame 2. Inside the mounting holes, there are Coating fixture (not shown), the substrate to be plated (substrate with prefabricated pattern) is set inside the coating fixture; the evaporation source 3 is set at the bottom inside the box 1 for evaporating the evaporation material in the direction of the umbrella frame 2 . The placement position of the substrate 10 with the prefabricated pattern 100 needs to be at a certain angle θ with the placement position of the evaporation source 3, which is used to adjust the shielding position of the shielding layer 20. The angle θ is the axis of the surface of the substrate 10 with the prefabricated pattern 100 and the evaporation source. 3 The angle between the evaporation directions, as shown in Figure 3. The angle θ ranges from 20° to 75°. If the angle θ is too small, for example, less than 20°, the shielding layer 20 formed in the plurality of first grooves 140 will be too uniform, exposing the inner walls of the first grooves 140 Less, even part of the inner wall of the first groove 140 cannot be exposed, so the inner wall of the first groove 140 cannot be etched during subsequent etching, and the single-sided inner wall etching effect is lost; if the angle θ is too large, for example If the angle is greater than 75°, an effective shielding layer 20 cannot be formed on the entire inner wall of the first groove 140 . Therefore, during subsequent etching, the entire inner wall will be etched, and the single-sided inner wall etching effect will be lost. In some embodiments, in order to form more intuitive asymmetric patterned grooves, the angle θ ranges from 45° to 65°.

Step S40: Use the etching liquid 41 to perform a second patterning process on the substrate 10 on which the shielding layer 20 is formed, to obtain the substrate 10 with the target pattern 110.

Some embodiments of the present application use an etching device 200 as shown in Figure 4 to etch the substrate 10 forming the shielding layer 20. The etching device 200 includes a carrying mechanism 4 and an etching liquid supply mechanism 5. The carrying mechanism 4 is used to carry the shielding layer. 20 of the substrate 10, specifically, the carrying mechanism 4 has an accommodating groove 42, the substrate 10 forming the shielding layer 20 can be arranged in the accommodating groove 42, the carrying mechanism 4 can be cylindrical, and can rotate around its central axis, etching The liquid supply mechanism 5 includes at least one nozzle, which is located above the carrying mechanism 4 and is used for spraying the etching liquid 41 .

Referring to Figure 5, step S40 may include:

S41: Place the substrate 10 on which the shielding layer 20 is formed into the accommodating groove 42 of the carrying mechanism 4 .

The size of the carrying mechanism 4 and the position of the substrate 10 forming the shielding layer 20 can be adjusted according to the final pattern design effect. The closer the position of the substrate 10 forming the shielding layer 20 (that is, the position of the accommodating groove) to the central axis of rotation, the higher the With the compensation of the rotation speed, the patterned groove 150 will change larger with the angle, showing a radial natural transition effect.

S42: Rotate the bearing mechanism 4 around the central axis.

The setting of the position where the substrate 10 forming the shielding layer 20 is placed needs to ensure a certain centrifugal force. The centrifugal force can be controlled by controlling the position of the accommodating groove 42 and the rotation speed of the substrate 10 forming the shielding layer 20. In some embodiments, the square of the rotation speed is equal to the square of the centrifugal force. The ratio of the position of the groove 42 v ² /r = ω ² ·r is 16 m·s ^-2 ~ 1000 m·s ^-2 . In some embodiments, the ratio of the square of the rotation speed to the position of the substrate 10 forming the shielding layer 20 is ω ² ·r is 50m·s ^-2 to 500m·s ^-2 . The degree to which the patterned groove 150 deviates from the central axis of rotation can also be controlled by simultaneously controlling the angle θ in step S30 and ω ² ·r in this step S40. Specifically, see FIG. 6 , where FIG. 6 a is at a large θ angle and low Figure 6b shows a substrate with a target pattern prepared under conditions of small θ angle and low centrifugal force. Figure 6c shows a substrate with target pattern prepared under conditions of large θ angle and high centrifugal force. The substrate, Figure 6d is a substrate with the target pattern prepared under the conditions of small θ angle and high centrifugal force. plate.

S43: At least one shower head sprays the etching liquid 41 onto the substrate 10 on which the shielding layer 20 is formed, so as to form the second groove 144 on the second inner wall 142.

The nozzle is arranged directly above the bearing mechanism 4, that is, above the central rotating shaft. The nozzle can be a PTFE acid-resistant nozzle. By adjusting the flow rate (or flow rate) of the nozzle, the effect of the target pattern 110 can be optimized. The greater the flow rate, the better the pattern in the same time. The greater the depth of the patterned groove, the smaller the flow rate, and the smaller the target etching depth h of the patterned groove within the same period of time. In some embodiments, the etching liquid 41 is a 40% NH ₄ F solution: 49% HF with a volume ratio of 6:1, and the flow rate of the nozzle is 0.2 liters/hour to 2 liters/hour. When the target etching depth h of the patterned groove 150 is less than 3 μm, the flow rate of the nozzle is 0.2 liters/hour to 0.5 liters/hour; when the target etching depth h of the patterned groove 150 is between 3 μm and 15 μm, the flow rate of the nozzle is 0.5-1.5 liters/hour; when the target etching depth h of the patterned groove 150 exceeds 15 μm, the flow rate can be appropriately increased. However, an excessively high flow rate that does not match the target etching depth h when patterning grooves will bring waste and poor morphology control, affecting the final yield. It can be understood that the etching liquid 41 can also be other commonly used etching liquids for wet etching, such as alkaline etching liquids or other acidic etching liquids. Specifically, the etching liquid 41 can be selected according to needs, and is not specifically limited here. The first groove 140 and the second groove 144 may form patterned grooves. The depths of the first groove 140 and the second groove 144 are different. The first groove 140 and the second groove 144 make the patterned grooves The groove has an asymmetric structure.

The inventor of this application has found that if a shielding layer is not provided on one side of the inner wall of the prefabricated pattern 100 and only centrifugal force is used to control the wet etching, the directional etching effect must be achieved when the groove size is on the order of microns. The centrifugal force required is relatively large. This is because at least the centrifugal force needs to overcome unfavorable factors such as surface tension and capillary action, and at the highest it needs to allow the insoluble matter (such as fluorosilicate) generated by the etching reaction of the substrate 10 to be rapidly enriched under the action of centrifugal force. It is biased towards one of the inner walls, which invisibly increases the equipment cost; and when the substrate 10 prepared by wet etching controlled by centrifugal force is used as a housing component of an electronic device (such as a glass battery cover), the protrusions of the quadrangular pyramidal crystal form are Under lighting conditions, a large amount of reflected light is scattered, so that the color of the decorative film layer in the glass battery cover cannot be well displayed, and there is a problem of single appearance and inability to adjust details.

Step S50: Remove the remaining shielding layer 20 to obtain the substrate 10 with the target pattern 110. The target pattern 110 includes a plurality of protrusions 120 arranged at intervals. The adjacent protrusions 120 are formed with patterned grooves 150. The patterned grooves 150 It is an asymmetric structure.

After step S40 is completed, the shielding layer 20 may remain on the surface of the substrate 10 , which can be removed by immersion stripping in a corrosive solution, such as one or more of nitric acid, hydrochloric acid, sulfuric acid and phosphoric acid. The concentration and immersion time should be adjusted appropriately. Taking hydrochloric acid as an example, the concentration and stripping time should be controlled within a range that is sufficient to remove the shielding layer 20 without significantly atomizing (corroding) the substrate 10 . Of course, it can be understood that in some embodiments, the remaining masking layer 20 may not be removed as needed.

According to other embodiments of the present application, the above steps S30-S50 can be repeated to process different surfaces or the same surface of the substrate 10 to prepare more complex surface patterns on the substrate 10. For example, targets can be prepared on different surfaces of the substrate. pattern, or the patterned groove may further include a third groove or more grooves spaced apart from the first groove and the second groove, or a pattern may be further formed on the protrusion, the depth of the third groove being equal to The depth of the first groove and the depth of the second groove are different.

In the above-mentioned embodiments of the present application, a substrate with a prefabricated pattern is first obtained through photolithography and etching steps, and then a shielding layer is provided on the partial surface with the prefabricated pattern through oblique angle evaporation technology, and the substrate is etched again under the action of centrifugal force, and finally the plating residue is removed The shielding layer is used to obtain an asymmetric directional etching pattern. Through the above method, this application provides a new directional wet etching method, which can prepare non-centrosymmetric trenches on the substrate, enriching design options; compared with the dry method Etching technology and compared to wet etching technology, the substrate with directional asymmetric etching patterns prepared in this application has low cost, simple operation, and is suitable for consumer electronics and industry selection; the method provided by this application can be applied multiple times in different directions , on the surface of the substrate Preparation of more complex surface patterns.

According to some embodiments of the present application, referring to Figure 7, the present invention proposes an electronic device 1000, including: a housing component 1001 and a functional component 1003. The housing component 1001 includes a substrate with at least one target pattern prepared by the above method. , at least one target pattern can be respectively provided on different surfaces of the substrate, that is, different surfaces of the substrate can be provided with target patterns. The substrate forming the housing component 1001 can be a plane or a curved surface. The curved surface substrate includes a 2.5D substrate or a 3D substrate. When the substrate When it is a curved substrate, the housing assembly 1001 has a bottom surface and multiple side walls, and the bottom surface and the multiple side walls define an accommodation space 1002; the functional component 1003 is located in the accommodation space 1002 of the housing assembly 1001.

The above are only embodiments of the present application, and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, All are similarly included in the patent protection scope of this application.

Claims

An etching method for a substrate, characterized by including:

providing a substrate;

Perform a first patterning process on the substrate to form a prefabricated pattern on the substrate;

Form a shielding layer on part of the surface of the prefabricated pattern; and

The substrate on which the shielding layer is formed is subjected to a second patterning process using an etching liquid to obtain the substrate with a target pattern. The target pattern includes a plurality of protrusions arranged at intervals, and adjacent protrusions are formed There are patterned grooves, and the patterned grooves have an asymmetric structure.
The etching method of a substrate according to claim 1, wherein performing a first patterning process on the substrate and forming a prefabricated pattern on the substrate includes:

A first patterning process is performed on the substrate through etching technology, so that the prefabricated pattern has a plurality of protrusions arranged at intervals, and first grooves are formed adjacent to the protrusions.
The etching method of a substrate according to claim 2, wherein the first patterning process is performed on the substrate through etching technology, so that the prefabricated pattern has a plurality of protrusions arranged at intervals, The first groove formed adjacent to the protrusion includes:

Cleaning process, washing and drying the substrate;

Resizing treatment, coating photoresist on the surface of the substrate;

Pre-baking treatment, removing part of the solvent in the photoresist through pre-baking;

Post-exposure baking treatment, exposing the pre-baked product, and post-baking the exposed product to further solidify the photoresist;

Developing and hardening treatment: develop and harden the post-baked product to form a photoresist mask;

Etching process: etching the substrate on which the photoresist mask is formed, and forming the prefabricated pattern on the substrate;

The glue removal process removes the remaining photoresist on the substrate.
The etching method of a substrate according to claim 2, wherein the first groove includes a first inner wall and a second inner wall, and the shielding layer is provided on the surface of the protrusion and the first inner wall.
The etching method of a substrate according to claim 2, wherein the first groove includes a first inner wall and a second inner wall, and the shielding layer is provided on the surface of the protrusion, the first inner wall and the first inner wall. The second inner wall, wherein the thickness of the shielding layer provided on the first inner wall is greater than the thickness of the shielding layer provided on the second inner wall.
The etching method of a substrate according to claim 4 or 5, characterized in that the substrate on which the shielding layer is formed is etched by an etching device, the etching device including a carrying mechanism and an etching liquid supply mechanism, so The carrying mechanism has a central rotating shaft and an accommodating groove, and the etching liquid supply mechanism includes at least one nozzle, and the nozzle is located above the carrying mechanism;

The step of performing a second patterning process on the substrate on which the shielding layer is formed with an etching liquid to obtain the substrate with a target pattern includes:

Place the substrate forming the shielding layer into the containing groove;

causing the carrying mechanism to rotate around the central axis;

The at least one showerhead sprays the etching liquid onto the substrate forming the shielding layer to form a second groove on the second inner wall, the depth of the second groove being the same as that of the first groove. The depth is different.
The etching method of a substrate according to claim 6, wherein the ratio of the square of the rotation speed of the substrate forming the shielding layer to the position of the accommodating groove ranges from 16 m·s -2 to 1000 m·s - 2 .
The etching method of a substrate according to claim 6, wherein the substrate is made of glass, the etching liquid includes a 40% concentration NH 4 F solution and a 49% concentration HF, and the 40% concentration NH The volume ratio of the 4 F solution and the HF with a concentration of 49% is 6:1, and the flow rate of the nozzle is 0.2 liters/hour to 2 liters/hour.
The etching method of the substrate according to claim 1, wherein the material of the shielding layer is Au, Ag, Cu or Cr, and the thickness of the shielding layer is 1/20 to 1/20 of the target etching depth of the target pattern. 1/2.
The etching method of a substrate according to claim 9, wherein the thickness of the shielding layer is 1/10 to 1/5 of the target etching depth of the target pattern.
The method for etching a substrate according to claim 1, wherein the shielding layer is made of a low-activity metal and the thickness of the shielding layer is 0.5um to 5um.
The etching method of a substrate according to claim 11, wherein the thickness of the shielding layer is 1 um to 2 um.
The etching method of a substrate according to claim 1, wherein forming a shielding layer on part of the surface of the prefabricated pattern includes:

The substrate forming the preformed pattern is placed in an evaporation device, and the angle θ between the substrate forming the preformed pattern and the placement position of the evaporation source in the evaporation device ranges from 20° to 75°. °;

The evaporation source evaporates the evaporation material in the direction of the substrate on which the preformed pattern is formed.
The etching method of a substrate according to claim 13, wherein the angle θ between the substrate on which the pre-formed pattern is formed and the placement position of the evaporation source in the evaporation device ranges from 45° to 65°. .
A housing assembly, characterized in that it includes a base plate, the base plate has at least one target pattern, the target pattern includes a plurality of protrusions arranged at intervals, and patterned grooves are formed adjacent to the protrusions, so The patterned grooves have an asymmetric structure.
The housing assembly of the substrate according to claim 15, wherein the patterned groove has a first groove and a second groove, and the depth of the first groove is equal to the depth of the second groove. Different, so that the patterned grooves have an asymmetric structure.
The housing assembly of the substrate according to claim 16, wherein the patterned groove further includes a third groove spaced apart from the first groove and the second groove, and the third groove is The depth is different from the depth of the first groove and the depth of the second groove.
The housing assembly of the substrate according to claim 15, wherein the at least one target pattern is respectively provided on different surfaces of the substrate.
The housing assembly of the substrate according to claim 15, wherein the at least one target pattern is respectively disposed on the same surface of the substrate.
An electronic device, characterized by including:

Shell components define the accommodation space;

Functional components are accommodated in the accommodation space;

Wherein, the housing component is the housing component described in claims 15-19.