CN102096310B - Method for correcting photoresist pattern and etching method - Google Patents
Method for correcting photoresist pattern and etching method Download PDFInfo
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- CN102096310B CN102096310B CN 200910201464 CN200910201464A CN102096310B CN 102096310 B CN102096310 B CN 102096310B CN 200910201464 CN200910201464 CN 200910201464 CN 200910201464 A CN200910201464 A CN 200910201464A CN 102096310 B CN102096310 B CN 102096310B
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Abstract
The embodiment of the invention provides a method for correcting a photoresist pattern and an etching method. The method for correcting the photoresist pattern comprises the following steps of: forming a photoresist pattern layer on an intermediate film layer; obtaining a correction value of the photoresist pattern according to the actual size of the photoresist pattern in the photoresist pattern layer and a target size to be obtained; setting an ion implantation parameter according to the correction value; and performing angled ion implantation on the side wall of a photoresist in the photoresist pattern layer to make the side wall of the photoresist shrunk inwards so as to correct the actual size of the photoresist pattern to obtain the target size to be obtained. The method provided by the embodiment of the invention is easy to operate, greatly improves efficiency, and reduces production cost.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate in particular to a kind of modification method and lithographic method of photoetching agent pattern.
Background technology
In the manufacture process of semiconductor devices, utilizing the pattern that forms after photoresist exposure, the development that substrate is carried out etching is the customary means that forms pattern at substrate, for example forms the process of gate pattern at substrate.Especially when making the SRAM memory chip, in order to form the gate pattern with good line end shape, as everyone knows, the line end shape of grid can directly affect performance of devices, in the prior art usually after substrate forms grid line, the repeated using etching technics carries out line end cutting, the gate pattern that has better line end shape with final formation to the grid line that forms.
Concrete, adopt etching technics that grid line is carried out the process of line end cutting shown in Fig. 1～3, at first, the vertical view of substrate as shown in Figure 1, etching forms two grid lines 11,12 on substrate, then covers the photoresist layer (not shown) at two grid lines respectively on grid line separately or simultaneously, and mask plate 13,14 is set above this photoresist layer, wherein, mask plate 13,14 position are predefined according to the designs demand.The side view of substrate as shown in Figure 2 after photoresist layer exposed, develops, can form photoresist pattern layer on the grid line 11,12, and wherein, the groove top between the photoresist 15,16 in this photoresist pattern layer is former mask plate 14 residing positions.The vertical view of substrate as shown in Figure 3 carries out etching according to the photoetching agent pattern in the above-mentioned photoresist pattern layer to grid line, thereby forms final gate pattern.
Yet, when forming photoresist pattern layer, if wherein the physical size of photoetching agent pattern or the broad and rough rugosity of bar do not meet target size or the specification of in advance design, need to revise photoetching agent pattern.The applying date is on November 6th, 2007, application number is that 200710047859.8 Chinese patent application discloses " a kind of method of revising photoetching offset plate figure ", the method is that the method that photoresist pattern layer further adopts etching machine to carry out the homophase etching is revised photoetching agent pattern, yet polymkeric substance residual after the etching can affect the semiconductor quality, removes polymkeric substance so the method also need be decomposed by multistep technique.Another modification method is again to form pattern, namely adopting the method photoresist pattern layer that will form of Oxygen plasma ashing and/or chemical solvent dissolving to clean removes, then the process shown in Fig. 1～3 that re-executes forms photoresist pattern layer again, until the physical size of photoetching agent pattern meets the in advance target size specification of design in the photoresist pattern layer that forms.Above two kinds of method steps are loaded down with trivial details, and efficient is extremely low, has greatly increased the manufacturing cost of chip.
Summary of the invention
The embodiment of the invention provides a kind of modification method and lithographic method of photoetching agent pattern, can improve the correction efficient to photoetching agent pattern.
In order to solve the problems of the technologies described above, the technical scheme of the embodiment of the invention is as follows:
A kind of modification method of photoetching agent pattern comprises:
Form photoresist pattern layer at middle rete;
According to the physical size of photoetching agent pattern in the described photoresist pattern layer and the target size of wish acquisition, obtain the modified value to described photoetching agent pattern;
Set the parameter of Implantation according to described modified value;
Photoresist sidewall in the described photoresist pattern layer is carried out angle-tilt ion inject, the sidewall of described photoresist is inside contracted, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern.
Preferably, described parameter according to described modified value setting Implantation comprises:
According to the material of described modified value, photoresist and the thickness of photoresist pattern layer, select heavy ion, set the Implantation direction with respect to the angle of inclination of described photoresist sidewall, dosage and the energy of Implantation.
Preferably, described heavy ion is a kind of or combination in any in the following ion:
Argon, silicon, germanium, phosphorus, arsenic, indium, antimony.
Preferably, described range of tilt angles is 0 to 25 degree.
Preferably, the dosage range of described Implantation is 5E14 to 5E15.
Preferably, the energy range of described Implantation is 10Kev to 100Kev.
Preferably, describedly photoresist sidewall in the described photoresist pattern layer carried out angle-tilt ion inject, the sidewall of described photoresist is inside contracted, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern, comprising:
At least two photoresist sidewalls in the described photoresist pattern layer are carried out respectively angle-tilt ion inject, the sidewall of each photoresist is inside contracted, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern.
A kind of lithographic method comprises:
Form photoresist pattern layer at middle rete;
According to the physical size of photoetching agent pattern in the described photoresist pattern layer and the target size of wish acquisition, obtain the modified value to described photoetching agent pattern;
Set the parameter of Implantation according to described modified value;
Photoresist sidewall in the described photoresist pattern layer is carried out angle-tilt ion inject, the sidewall of described photoresist is inside contracted, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern;
Rete in the middle of according to revised photoetching agent pattern etching.
Preferably, described parameter according to described modified value setting Implantation comprises:
According to the material of described modified value, photoresist and the thickness of photoresist pattern layer, select heavy ion, set the Implantation direction with respect to the angle of inclination of described photoresist sidewall, dosage and the energy of Implantation.
Preferably, described heavy ion is a kind of or combination in any in the following ion:
Argon, silicon, germanium, phosphorus, arsenic, indium, antimony.
Preferably, described range of tilt angles is 0 to 25 degree.
Preferably, the dosage range of described Implantation is 5E14 to 5E15.
Preferably, the energy range of described Implantation is 10Kev to 100Kev.
Preferably, describedly photoresist sidewall in the described photoresist pattern layer carried out angle-tilt ion inject, the sidewall of described photoresist is inside contracted, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern, comprising:
At least two photoresist sidewalls in the described photoresist pattern layer are carried out respectively angle-tilt ion inject, make each the photoresist sidewall is asymmetric to inside contract, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern.
Preferably, described middle rete is the substrate with grid line;
Describedly form photoresist pattern layer at middle rete and comprise:
Be formed for the photoresist pattern layer of the described grid line of etching at the grid line of described substrate;
Described target size according to described photoetching agent pattern is carried out etching to rete in the middle of described and is comprised:
Target size according to described photoetching agent pattern is carried out etching to the grid line on the described substrate, obtains gate pattern.
The embodiment of the invention is bombarded by the method that adopts angle-tilt ion and the inject photoresist sidewall to photoresist pattern layer, make the structure of photoresist side-walls become fine and close, thereby make the photoresist sidewall to the inboard indentation of photoresist, revise photoetching agent pattern, finally satisfied default target size.This correction need not former photoresist pattern layer is cleaned, does over again, but directly the photoetching agent pattern in the former photoresist pattern layer is revised, and also can not produce residual polymkeric substance, and operation is simple, greatly improved correction efficient, reduced production cost.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing by physical size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1-Fig. 3 is the available technology adopting etching technics carries out the line end cutting to grid line schematic diagram;
Fig. 4 is the modification method process flow diagram of a pair of photoetching agent pattern of the embodiment of the invention;
Fig. 5-the 8th, the structural representation of semiconductor devices among the embodiment one;
Fig. 9 is the modification method process flow diagram of two pairs of photoetching agent patterns of the embodiment of the invention;
Figure 10-the 13rd, the structural representation of semiconductor devices in the present embodiment two;
Figure 14 is the lithographic method process flow diagram of the embodiment of the invention three;
Figure 15, the 16th, the structural representation of semiconductor devices among the embodiment three;
Figure 17 is the lithographic method process flow diagram of the embodiment of the invention four;
Figure 18, the 19th, the structural representation of semiconductor devices among the embodiment four.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Set forth in the following description a lot of details so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of indication device structure can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
At present, no matter be to form initial gate pattern at substrate, or in such as the manufacture process of SRAM memory chip, grid line is carried out the line end cutting, so long as adopt the photoresist etching technics just may exist photoetching agent pattern not meet the situation of predetermined size or specification, no matter adopt etching machine to the photoetching agent pattern correction in the prior art, yet remove the method for residual polyalcohol after etching, or adopt the method that again forms the photoengraving pattern layer, the capital greatly reduces production efficiency, has increased production cost.
Based on this, the invention provides a kind of modification method and lithographic method of photoetching agent pattern, by adopting method that angle-tilt ion injects the photoresist sidewall of photoresist pattern layer is bombarded, make the structure of photoresist side-walls become fine and close, thereby make the photoresist sidewall to the inboard indentation of photoresist, revise photoetching agent pattern, finally satisfied default specification or size.The method not only can be applicable to form initial gate pattern at substrate, and the line end that also can be applicable in such as the manufacture process of SRAM memory chip grid line be carried out cuts, and also can also be applied in other any processing step the correction to photoetching agent pattern.Below in conjunction with drawings and Examples, technical scheme of the present invention is described.
With reference to Fig. 4, be the method flow diagram of a pair of photoetching agent pattern correction of the embodiment of the invention.Fig. 5-8 is the structural representation of semiconductor devices in the present embodiment one.
This modification method can comprise:
Step S11 forms photoresist pattern layer 21 at middle rete, and its structure as shown in Figure 5.
In the present embodiment, this centre rete can be monocrystalline silicon or polysilicon element semiconductor substrate or compound semiconductor substrate, also can be at the overlayer that forms on the semiconductor devices of certain pattern, as has the chip etc. of grid line, does not limit herein.
The process that forms this photoresist pattern layer 21 can be included on the middle rete and be coated with photoresist, then adopt mask plate that photoresist is exposed, develops, thereby the design transfer on the mask plate is to photoresist, similar in its detailed process and the prior art, repeat no more herein.
Step S12 according to the physical size of photoetching agent pattern in the photoresist pattern layer 21 and the target size of wish acquisition, obtains the modified value to photoetching agent pattern.
In the present embodiment, as shown in Figure 6, the physical size of photoetching agent pattern is X in the photoresist pattern layer 21
1, the target size that wish obtains is X
2, namely can be Δ X to the modified value of photoetching agent pattern then
1=X
1-X
2, wherein, physical size can be passed through to measure to obtain the size of being scheduled to when target size is design.
Step S13 is according to the parameter of described modified value setting Implantation.
Can select heavy ion according to the material of modified value, photoresist and the thickness of photoresist pattern layer in this step, set the Implantation direction with respect to the angle of inclination of the photoresist sidewall that injects, dosage and the energy of Implantation.Wherein, heavy ion refers to that mass of ion is heavier for the photoresist organic molecule, and the ion that can make photoresist structure become fine and close to the bombardment photoresist time can be a kind of or arbitrarily combination in argon, silicon, germanium, phosphorus, arsenic, indium, the antimony.The angle of inclination of Implantation refers to the angle between the sidewall direction of photoresist in the direction of Implantation and the photoresist pattern layer.
Above-mentioned modified value and each photoresist material, the photoetching agent pattern layer thickness, heavy ion, the tilted ion implantation angle, dosage, relation between the energy can obtain in advance by experiment, can select a parameter to fix as other parameter of variable, thereby obtain the relation between modified value and this variable, generally the material of photoresist can be positivity I Lithography glue or negativity I Lithography glue etc., this parameter is relatively fixing, as select the photoresist material fixed, the photoetching agent pattern layer thickness, adopt the Ar Implantation, the angle of inclination is set as 25 degree, energy settings is 50Kev, then change implantation dosage, to obtain the relation between modified value and the implantation dosage, can obtain by that analogy the funtcional relationship between modified value and each parameter, this experimental technique is the known method of prior art, repeats no more herein.Usually the range of tilt angles of setting is 0 to 25 degree, and the dosage range of Implantation is 5E14 to 5E15, and the energy range of Implantation is 10Kev to 100Kev.For example, if the thickness of photoresist pattern layer is 600nm, the SXM1754 that the photoresist material provides for Shinetsu, setting the angle of inclination is 6 °, ion implantation dosage is that 5E14, energy are 50keV, the one-sided sidewall of photoresist is carried out Implantation, then can make the photoresist sidewall to the inboard indentation 13nm of photoresist.
Step S14 carries out angle-tilt ion to the photoresist sidewall in the photoresist pattern layer 21 and injects, and the sidewall of photoresist is inside contracted, and is modified to the target size that described wish obtains with the physical size with photoetching agent pattern.
In this step, according to photoresist material, photoresist pattern layer 21 thickness and the modified value Δ X of photoresist pattern layer 21
1=X
1-X
2Set the tilt angle theta of Implantation
1, behind implantation dosage and the energy, as shown in Figure 7, the photoresist sidewall 212 in the photoresist pattern layer 21 is carried out angle-tilt ion injects, make the position of sidewall 212 to the inboard indentation Δ of photoresist X
1, reach the position at sidewall 222 places among Fig. 7, thereby with the physical size X of photoetching agent pattern
1Be modified to the target size X that described wish obtains
2
Said method is for carrying out the situation of Implantation to the one-sided sidewall of photoresist that does not meet the intended target size in the photoresist pattern layer 21, if two of photoresist sidewalls 211,212 all fall short of specifications in the photoresist pattern layer 21, then can or successively carry out respectively Implantation to two sidewalls whiles, as shown in Figure 8, that make two sidewalls 211,212 modified value and be Δ X
1, reach the position at sidewall 221,222 places, concrete can comprise:
After setting the Implantation parameter, oppose side wall 211 carries out angle-tilt ion and injects, with sidewall 211 indentation Δ X
2Reach the position of sidewall 221;
Oppose side wall 212 carries out angle-tilt ion and injects, with sidewall 212 indentation Δ X
3Reach the position of sidewall 222.Wherein, Δ X
2+ Δ X
3=Δ X
1Certainly, the order injected of two side 211,212 angle-tilt ion can be adjusted as required.As seen, for the different situation of photoresist two side modified value, embodiment of the invention method can realize the asymmetric correction to the photoresist two side, thereby reaches specification requirement separately.Wherein, sidewall 221,222 is not and sidewall 211,212 simultaneous sidewalls, but revised sidewall 211,212 has conveniently carried out above numbering for statement, and following examples are similar.
The embodiment of the invention is bombarded by the method that adopts angle-tilt ion and the inject photoresist sidewall to photoresist pattern layer, make the structure of photoresist side-walls become fine and close, thereby make the photoresist sidewall to the inboard indentation of photoresist, revise photoetching agent pattern, finally satisfied default target size.This correction need not former photoresist pattern layer is cleaned, does over again, but directly the photoetching agent pattern in the former photoresist pattern layer is revised, and also can not produce residual polymkeric substance, and operation is simple, greatly improved correction efficient, reduced production cost.
With reference to Fig. 9, be the modification method process flow diagram of two pairs of photoetching agent patterns of the embodiment of the invention.In the present embodiment, middle rete is the substrate with grid line, when the method can specifically be applied to the cutting of grid line line end, in the process of the line end cutting of for example in the manufacture process of SRAM memory chip grid line being carried out, to the correction of photoetching agent pattern.Figure 10-13 is the structural representation of semiconductor devices in the present embodiment two.
This modification method can comprise:
Step S21, as shown in figure 10, at the grid line 31 formation photoresist pattern layers 32 of substrate.
In this step, similar in the forming process of this photoresist pattern layer 32 and the prior art, repeat no more herein.The photoetching agent pattern that photoresist 32a and photoresist 32b form in the photoresist pattern layer 32 i.e. groove shown in the figure, this groove correspondence predefined wish form the position of isolated area, in order to follow-uply this regional grid line carried out etching remove, but in manufacture process, the physical size of the groove that photoresist 32a and photoresist 32b form not is the target size of predefined groove, so need to revise this photoetching agent pattern.
Step S22 according to the physical size of photoresist 32a in the photoresist pattern layer 32 and photoresist 32b and the target size of wish acquisition, obtains the modified value to photoetching agent pattern.
In the present embodiment, the physical size of photoetching agent pattern can be the spacing X between two photoresist 32a, the 32b after as shown in figure 11 the development in the photoresist pattern layer 32
3, the target size of the photoetching agent pattern that wish obtains is that the spacing between two photoresists is X
4, namely can be Δ X to the modified value of photoetching agent pattern then
4=X
4-X
3
Wherein, be Δ X to the modified value of the sidewall 321 of photoresist 32a
5, be Δ X to the modified value of the sidewall 322 of photoresist 32b
6, wherein, Δ X
4=Δ X
5+ Δ X
6
Step S23 is according to the parameter of described modified value setting Implantation.
According to modified value Δ X
5With modified value Δ X
6To two side 321, the 322 corresponding parameters that Implantation separately is set, the setup parameter process of this step and abovementioned steps S13 is similar, repeats no more herein.
Step S24, oppose side wall 321 argon ion that tilts injects, and sidewall 321 is retracted to the position of sidewall 331.
As shown in figure 12, this step is namely injected by the inclination argon ion and is made sidewall 321 to the inboard indentation Δ of photoresist X
5, the angle of inclination of Implantation is θ
2
Step S25, oppose side wall 322 argon ion that tilts injects, and sidewall 322 is retracted to the position of sidewall 332.
As shown in figure 13, this step is namely injected by angle-tilt ion and is made sidewall 322 to the inboard indentation Δ of photoresist X
6, the angle of inclination of Implantation is θ
3
Above-mentioned steps S24, S25 can carry out simultaneously, and in order to reduce the phase mutual interference when the Implantation, Implantation is successively carried out in preferred both sides.As seen, for the different situation of photoresist two side modified value, embodiment of the invention method can realize the asymmetric correction to the photoresist two side, thereby reaches target size.Certainly, the order of the angle-tilt ion of two side injection can be adjusted as required.The situation that does not meet default specification or size for the one-sided sidewall of photoresist in the photoresist pattern layer only gets final product the one-sided Implantation that carries out.
The embodiment of the invention is bombarded by the method that adopts angle-tilt ion and the inject photoresist sidewall to photoresist pattern layer, make the structure of photoresist side-walls become fine and close, thereby make the photoresist sidewall to the inboard indentation of photoresist, revise photoetching agent pattern, finally satisfied default target size.This correction need not former photoresist pattern layer is cleaned, does over again, but directly the photoetching agent pattern in the former photoresist pattern layer is revised, and also can not produce residual polymkeric substance, and operation is simple, greatly improved correction efficient, reduced production cost.
Based on above-mentioned modification method to photoetching agent pattern, the present invention also provides a kind of lithographic method, describes below by specific embodiment.
With reference to Figure 14, be the lithographic method process flow diagram of the embodiment of the invention three.Be depicted as the structural representation of semiconductor devices among the embodiment three such as Figure 15,16.
This lithographic method can comprise:
Step S31 forms photoresist pattern layer at middle rete 41.
In the present embodiment, this centre rete 41 can be monocrystalline silicon or polysilicon element semiconductor substrate or compound semiconductor substrate, also can be at the overlayer that forms on the semiconductor devices of certain pattern, as has the chip etc. of grid line, does not limit herein.
Step S32, the target size of the photoetching agent pattern that obtains according to the physical size of photoetching agent pattern in the photoresist pattern layer and wish obtains the modified value to photoetching agent pattern.
This correction may be the correction to the one-sided sidewall of photoresist in the photoresist pattern layer, also may be the correction to the sidewall of photoresist both sides sidewall or two photoresists.
Step S33 is according to the parameter of described modified value setting Implantation.
This process and previous embodiment are similar, repeat no more herein.Usually the heavy ion of selecting can be a kind of or arbitrarily combination in argon, silicon, germanium, phosphorus, arsenic, indium, the antimony, the range of tilt angles of setting is 0 to 25 degree, the dosage range of Implantation is 5E14 to 5E15, and the energy range of Implantation is 10Kev to 100Kev.
Step S34 carries out angle-tilt ion to the sidewall of photoresist in the photoresist pattern layer 42 and injects, and makes the sidewall locations that is reduced to photoresist 43 in the sidewall of photoresist 42, is modified to the target size that wish obtains with the physical size with photoetching agent pattern, as shown in figure 15.
Wherein, photoresist 43 is revised photoresists 42, for above numbering has conveniently been carried out in statement.
Step S35 carries out etching according to revised photoetching agent pattern to middle rete 41.
As shown in figure 16, according to the photoetching agent pattern of revising rear acquisition is carried out etching to substrate 41, form semiconductor devices.
In the present embodiment, the specific implementation process of step S31～S34 please refer to the description of previous embodiment.
The embodiment of the invention is bombarded by the method that adopts angle-tilt ion and the inject sidewall to the photoresist pattern layer photoresist, revised photoetching agent pattern, then according to revised pattern substrate is carried out etching, finally obtained to satisfy the semiconductor devices of default specification or size.Operation is simple for the method, greatly improved formation efficiency and reduced production cost.
With reference to Figure 17, be the lithographic method process flow diagram of the embodiment of the invention four.Be the structural representation of semiconductor devices among the embodiment four such as Figure 18,19.
In the present embodiment, middle rete is the substrate with grid line, and the method can specifically be applied to the line end cutting of grid line on the substrate, and for example the line end to grid line cuts in the manufacture process of SRAM memory chip.
The method can comprise:
Step S41 is at the grid line 51 formation photoresist pattern layers 52 of substrate.
Step S42, the target size according to the physical size of photoetching agent pattern in the photoresist pattern layer 52 and wish obtain obtains the modified value to the sidewall of photoresist a, and to the modified value of the sidewall of photoresist b.
Step S43 sets the parameter of Implantation according to the modified value of two side.
This process and previous embodiment are similar, repeat no more herein.Usually the heavy ion of selecting can be a kind of or arbitrarily combination in argon, silicon, germanium, phosphorus, arsenic, indium, the antimony, the range of tilt angles of setting is 0 to 25 degree, the dosage range of Implantation is 5E14 to 5E15, and the energy range of Implantation is 10Kev to 100Kev.
Step S44 carries out angle-tilt ion to the sidewall of photoresist a and injects, and makes sidewall to the inboard indentation of photoresist.
Step S45 carries out angle-tilt ion to the sidewall of photoresist b and injects, and makes sidewall to the inboard indentation of photoresist.
As shown in figure 18 for the two side being carried out the semiconductor structure schematic diagram after angle-tilt ion is injected.The size of the photoetching agent pattern that photoresist a, b form after revising is the target size that wish obtains.For the different situation of photoresist two side modified value, embodiment of the invention method can realize the asymmetric correction to the photoresist two side.The order of step S44 and step S45 can be adjusted as required.Above step S41～S45 and previous embodiment are similar, repeat no more herein.
Step S46 carries out etching according to the photoetching agent pattern of revising to the grid line 51 on the substrate, obtains gate pattern, forms structure as shown in figure 19.
By above-mentioned asymmetric correction to photoresist a, b sidewall, so that form the photoetching agent pattern array that meets default specification on the grid line 51, according to revised pattern grid line is carried out etching, so that the final gate pattern that forms has preferably line end shape.
The embodiment of the invention is bombarded by the method that adopts angle-tilt ion and the inject sidewall to the photoresist pattern layer photoresist, revised photoetching agent pattern, then according to revised pattern substrate is carried out etching, finally obtained to satisfy the semiconductor devices of default specification or size.Operation is simple for the method, greatly improved formation efficiency and reduced production cost.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Although the present invention discloses as above with preferred embodiment, yet is not to limit the present invention.Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (11)
1. the modification method of a photoetching agent pattern is characterized in that, comprising:
Form photoresist pattern layer at middle rete;
According to the physical size of photoetching agent pattern in the described photoresist pattern layer and the target size of wish acquisition, obtain the modified value to described photoetching agent pattern;
Set the parameter of Implantation according to described modified value;
Photoresist sidewall in the described photoresist pattern layer is carried out angle-tilt ion inject, make the structure of photoresist side-walls become fine and close, the sidewall of described photoresist is inside contracted, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern;
Described parameter according to described modified value setting Implantation comprises:
According to the material of described modified value, photoresist and the thickness of photoresist pattern layer, select heavy ion, set the Implantation direction with respect to the angle of inclination of described photoresist sidewall, dosage and the energy of Implantation.
2. method according to claim 1 is characterized in that, described heavy ion is a kind of or combination in any in the following ion:
Argon, silicon, germanium, phosphorus, arsenic, indium, antimony.
3. method according to claim 1 is characterized in that, described range of tilt angles is 0 to 25 degree.
4. method according to claim 1 is characterized in that, the energy range of described Implantation is 10Kev to 100Kev.
5. the described method of any one in 4 according to claim 1, it is characterized in that, describedly photoresist sidewall in the described photoresist pattern layer is carried out angle-tilt ion inject, the sidewall of described photoresist is inside contracted, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern, comprise:
At least two photoresist sidewalls in the described photoresist pattern layer are carried out respectively angle-tilt ion inject, the sidewall of each photoresist is inside contracted, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern.
6. a lithographic method is characterized in that, comprising:
Form photoresist pattern layer at middle rete;
According to the physical size of photoetching agent pattern in the described photoresist pattern layer and the target size of wish acquisition, obtain the modified value to described photoetching agent pattern;
Set the parameter of Implantation according to described modified value;
Photoresist sidewall in the described photoresist pattern layer is carried out angle-tilt ion inject, make the structure of photoresist side-walls become fine and close, the sidewall of described photoresist is inside contracted, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern;
Rete in the middle of according to revised photoetching agent pattern etching; Described parameter according to described modified value setting Implantation comprises:
According to the material of described modified value, photoresist and the thickness of photoresist pattern layer, select heavy ion, set the Implantation direction with respect to the angle of inclination of described photoresist sidewall, dosage and the energy of Implantation.
7. method according to claim 6 is characterized in that, described heavy ion is a kind of or combination in any in the following ion:
Argon, silicon, germanium, phosphorus, arsenic, indium, antimony.
8. method according to claim 6 is characterized in that, described range of tilt angles is 0 to 25 degree.
9. method according to claim 7 is characterized in that, the energy range of described Implantation is 10Kev to 100Kev.
10. the described method of any one in 9 according to claim 6, it is characterized in that, describedly photoresist sidewall in the described photoresist pattern layer is carried out angle-tilt ion inject, the sidewall of described photoresist is inside contracted, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern, comprise:
At least two photoresist sidewalls in the described photoresist pattern layer are carried out respectively angle-tilt ion inject, make each the photoresist sidewall is asymmetric to inside contract, be modified to the target size that described wish obtains with the physical size with described photoetching agent pattern.
11. the described method of any one in 9 is characterized in that according to claim 6,
Rete is the substrate with grid line in the middle of described;
Describedly form photoresist pattern layer at middle rete and comprise:
Be formed for the photoresist pattern layer of the described grid line of etching at the grid line of described substrate;
Described target size according to described photoetching agent pattern is carried out etching to rete in the middle of described and is comprised:
Target size according to described photoetching agent pattern is carried out etching to the grid line on the described substrate, obtains gate pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910201464 CN102096310B (en) | 2009-12-14 | 2009-12-14 | Method for correcting photoresist pattern and etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910201464 CN102096310B (en) | 2009-12-14 | 2009-12-14 | Method for correcting photoresist pattern and etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102096310A CN102096310A (en) | 2011-06-15 |
| CN102096310B true CN102096310B (en) | 2013-01-02 |
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| US9520290B1 (en) * | 2015-08-21 | 2016-12-13 | Varian Semiconductor Equipment Associates, Inc. | Ion implantation for improved etch performance |
| US9735013B2 (en) * | 2015-12-16 | 2017-08-15 | Varian Semiconductor Equipment Associates, Inc. | Ion implantation for improved contact hole critical dimension uniformity |
| CN109212897A (en) * | 2018-09-30 | 2019-01-15 | 武汉华星光电技术有限公司 | A kind of measurement complement value method of mask plate, the preparation method of mask plate and mask plate |
| CN112824972A (en) * | 2019-11-21 | 2021-05-21 | 中芯国际集成电路制造(上海)有限公司 | Target layout and mask layout correction method, mask and semiconductor structure |
| CN115259679B (en) * | 2022-07-26 | 2024-02-27 | Oppo广东移动通信有限公司 | Etching method of substrate, shell assembly and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200404341A (en) * | 2002-09-12 | 2004-03-16 | Mitsubishi Electric Corp | Method of manufacturing electronic device |
| CN1521803A (en) * | 2002-11-25 | 2004-08-18 | 株式会社瑞萨科技 | Method for manufacturing semiconductor device |
| CN1929094A (en) * | 2005-09-09 | 2007-03-14 | 联华电子股份有限公司 | Method for reducing feature size and semi-conductor etching method |
| CN1940715A (en) * | 2005-09-27 | 2007-04-04 | 力晶半导体股份有限公司 | Optical mask pattern correcting method and its formation |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200404341A (en) * | 2002-09-12 | 2004-03-16 | Mitsubishi Electric Corp | Method of manufacturing electronic device |
| CN1521803A (en) * | 2002-11-25 | 2004-08-18 | 株式会社瑞萨科技 | Method for manufacturing semiconductor device |
| CN1929094A (en) * | 2005-09-09 | 2007-03-14 | 联华电子股份有限公司 | Method for reducing feature size and semi-conductor etching method |
| CN1940715A (en) * | 2005-09-27 | 2007-04-04 | 力晶半导体股份有限公司 | Optical mask pattern correcting method and its formation |
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