CN1940715A - Optical mask pattern correcting method and its formation - Google Patents
Optical mask pattern correcting method and its formation Download PDFInfo
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- CN1940715A CN1940715A CNA2005101070214A CN200510107021A CN1940715A CN 1940715 A CN1940715 A CN 1940715A CN A2005101070214 A CNA2005101070214 A CN A2005101070214A CN 200510107021 A CN200510107021 A CN 200510107021A CN 1940715 A CN1940715 A CN 1940715A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 89
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Abstract
A method for calibrating photomask pattern includes providing a test photomask and transferring original pattern on test photomask to the first photoresist layer for obtaining multiple developed pattern then measuring out their first size, carrying out pattern micro process on developed pattern to obtain micro processed pattern then measuring out their second size, calculate out deviate of two said sizes and utilizing two said sizes and deviate as well as original plotting data to form a databank, using databank to set up optical near effect revision model then utilizing said model to calibrate original plotting data for obtaining calibrated plotting data.
Description
Technical field
The present invention relates to bearing calibration of a kind of photoetching and forming method thereof, particularly relate to bearing calibration of a kind of optical mask pattern and forming method thereof.
Background technology
Recently, semiconductor industry is the trend designs of dwindling circuit component all, and one of the most very important step is photoetching process (Photolithography) in whole semiconductor technology.The pattern of every relevant for example each layer film with semiconductor component structure all is to decide its critical size by photoetching process (Critical Dimension, size CD) also are decided by the development of photoetching process technology.
Dwindle, improve the developing direction of resolution now in response to component size, can use KrF exposure machine collocation phase-shift type photomask (Phase Shift Mask, PSM), but technology node for better breakthrough process, exposure machine need use more, and the light source of small wavelength for example is KrF (KrF, 248nm), argon fluoride (ArF, 193nm), fluorine (F
2, 157nm), argon (Ar
2, 126nm) etc.,, and further obtain littler component size so that element can access littler live width.Yet above-mentioned exposure tool is still very expensive, or still in research and development.
Therefore, a kind of pattern shrink technology of innovation, chemical micro technology (Chemical ShrinkProcess) is suggested.Chemistry micro technology is to utilize chemical micro reagent is coated on the photoresist layer of finishing exposure, development, and carries out baking procedure and form new material layer with the pattern sidewalls in the photoresist layer, to reach the purpose that pattern dwindles.
Generally speaking, use chemical micro technology to carry out the pattern micro, all be to estimate the micro amount with single deviation (Bias) value (critical size of the critical size of pattern behind deviate=micro-development back pattern), then utilize the target critical dimension (Target CD) of pattern after the development on this deviate decision photoresist layer again, and target critical dimension is revised the size of the master pattern on the photomask thus.But, when the master pattern of desiring to be transferred on the wafer has identical critical size, and its pattern density (Pattern Density) is not simultaneously, if revise the size of the master pattern on the photomask with single deviate, and uncontrollable its after photoetching process and chemical micro technology, the critical size that is presented on the pattern on the wafer is all admissible pattern dimension.Thus, will have a strong impact on the productive rate of technology and the usefulness of reliability and element etc.
Summary of the invention
In view of this, purpose of the present invention is exactly that bearing calibration of a kind of optical mask pattern and forming method thereof is being provided, can be with different key size deviation value correction optical mask patterns, make on the wafer formed pattern comparatively accurate, improve the reliability and the yield rate of technology.
The present invention proposes a kind of bearing calibration of optical mask pattern, and this bearing calibration provides a test light mask earlier, is formed with a plurality of master patterns according to a raw graphics data on this test light mask.Then, the master pattern on the test light mask is transferred to one first photoresist layer, forms a plurality of first development back patterns, and measure the first size of each first development back pattern with correspondence.Then, the first back pattern that develops is carried out a pattern micro technology, form pattern behind a plurality of first micros, and measure second size of pattern behind each first micro with correspondence.Continue it, calculate the deviate of first size second size corresponding, and collect raw graphics data, first size, second size and deviate to obtain a database with it.Subsequently, utilize data of database to set up an optical proximity effect correction model.Then, raw graphics data is proofreaied and correct, proofreaied and correct the post-plot data to obtain one according to the optical proximity effect correction model.
Described according to embodiments of the invention, also be included in set up the optical proximity effect correction model after, carry out one first verification step, with checking optical proximity effect correction model.Wherein, first verification step for example is to utilize raw graphics data and first size to set up a checking matched curve model.Then, compare optical proximity effect correction model and checking matched curve model, whether correct to judge a plurality of second development back patterns that are formed in advance on the second photoresist layer, if not, then repeat to set up the step of this optical proximity effect correction model.In one embodiment, after first verification step, also comprise and carry out one second verification step, with checking optical proximity effect correction model.Wherein, second verification step for example is comparison optical proximity effect correction model and raw graphics data, whether correct with pattern after judging a plurality of second micros that are formed in advance on the second photoresist layer, if not, then repeat to set up the step of optical proximity effect correction model.
Described according to embodiments of the invention, above-mentioned pattern micro technology for example is chemical micro technology, hot-fluid technology, chemical amplification group agent live width technology, Lei Wensheng type phase transfer photomask double exposure technology.
Described according to embodiments of the invention, above-mentioned raw graphics data for example is critical size, pattern density, live width gap ratio.
The present invention proposes a kind of formation method of optical mask pattern in addition, and this formation method forms a plurality of master patterns according to a raw graphics data earlier on a test light mask.Then, the master pattern on the test light mask is transferred to the first photoresist layer, forms a plurality of first development back patterns, and measure the first size of these first development back patterns with correspondence.Afterwards, these first back patterns that develop are carried out a pattern micro technology, form pattern behind a plurality of first micros, and measure second size of pattern behind first micro with correspondence.Then, calculate the deviate of first size second size corresponding, and collect raw graphics data, first size, second size and deviate to obtain a database with it.Continue it, utilize data of database to set up an optical proximity effect correction model.Subsequently, raw graphics data is proofreaied and correct, proofreaied and correct the post-plot data to obtain one according to the optical proximity effect correction model.Then, carry out a write step, will proofread and correct the post-plot data and be written on the photomask, on photomask, to form a pattern.
Described according to embodiments of the invention, also be included in set up the optical proximity effect correction model after, carry out one first verification step, with checking optical proximity effect correction model.Wherein, first verification step for example is to utilize raw graphics data and first size to set up a checking matched curve model.Then, compare optical proximity effect correction model and checking matched curve model, whether correct to judge a plurality of second development back patterns that are formed in advance on the second photoresist layer, if not, then repeat to set up the step of optical proximity effect correction model.In one embodiment, behind first verification step, also comprise and carry out one second verification step, with checking optical proximity effect correction model.Wherein, second verification step for example is comparison optical proximity effect correction model and this raw graphics data, whether correct with pattern after judging a plurality of second micros that are formed in advance on the second photoresist layer, if not, then repeat to set up the step of optical proximity effect correction model.
Described according to embodiments of the invention, above-mentioned pattern micro technology for example is chemical micro technology, hot-fluid technology, chemical amplification group agent live width technology, Lei Wensheng type phase transfer photomask double exposure technology.
Described according to embodiments of the invention, above-mentioned raw graphics data for example is critical size, pattern density, live width gap ratio.
Described according to embodiments of the invention, above-mentioned write step uses electron beam or laser beam to carry out it.
The effect that the present invention is produced chemical micro technology and the influence of optical proximity effect, a database is set up in utilization, and calculate, to obtain an optical proximity effect correction model, and with this optical proximity effect correction model, raw graphics data is proofreaied and correct, obtained the target critical dimension of intrinsic configuration pattern, so the technology cost be can save, process yield and reliability improved.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is the flow chart of steps according to the formation method of the optical mask pattern that embodiments of the invention illustrated.
The simple symbol explanation
100,110,120,130,140,150,160,170,180: step
Embodiment
Fig. 1 is the flow chart of steps according to the formation method of the optical mask pattern that embodiments of the invention illustrated.
Please refer to Fig. 1, step 100 provides a test light mask, is formed with a plurality of master patterns according to a raw graphics data on this test light mask.It for example is that raw graphics data with intrinsic configuration pattern is written on the test light mask, to form a plurality of master patterns on the test light mask.Above-mentioned raw graphics data includes critical size, pattern density and the live width gap ratio (Duty Ratio) etc. of intrinsic configuration pattern.
Be to be that example is done explanation with chemical micro technology in the present embodiment, the present invention is not limited thereto certainly.Chemistry micro technology is called auxiliary resolution enhancement lithography (the ResolutionEnhancement Lithography Assist by Chemical Shrink of chemical micro again, RELACS) technology, it for example is to utilize chemical micro reagent is coated on the photoresist layer that is formed with the back pattern that develops, and carry out baking procedure, sidewall with pattern after the development in the photoresist layer forms new material layer, to reach the purpose of dwindling pattern.In addition, be noted that especially and develop the back pattern after chemical micro technology that the micro amount of pattern can be different because of the difference of critical size, density and the live width gap ratio (Duty Ratio) of pattern behind its formed micro.Above-mentioned, the micro amount of pattern is meant deviation (Bias) value of critical size with the critical size of the back pattern that develops of pattern behind the micro behind the mentioned micro.
Particularly, because it is quite a lot of to influence the parameter of chemical micro technology, it comprises reaction density, reaction time, rate of diffusion and reaction area etc., and in order to satisfy so complicated reaction mechanism, usually must collect many data, with mathematic(al) modes such as its reaction kinetics of inference and quality transmission, can optical mask pattern be proofreaied and correct, obtain the target critical dimension of intrinsic configuration pattern.And, add the influence of optical proximity effect, must need more data and more complicated inference thus, the beginning can access the target critical dimension of intrinsic configuration pattern.And the effect that utilization of the present invention is produced chemical micro technology and the influence of optical proximity effect, set up a database, and utilize existing software package (OPC software), these data are calculated, to set up an optical proximity effect correction model, can proofread and correct raw graphics data, obtain the target critical dimension of intrinsic configuration pattern, so the technology cost be can save, process yield and reliability improved.
In one embodiment, after step 140, also can carry out one first verification step (step 150), to verify above-mentioned optical proximity effect correction model, its objective is and detecting if correction post-plot data are written on the photomask, and when being transferred to the photoresist layer, whether the pattern in the photoresist layer is the admissible size of technology.First verification step for example is, utilizes existing software package, for example verifies (Post OPC Verification) software behind the OPC, sets up one with raw graphics data with the back critical size that develops and detects the matched curve model.Then, relatively whether optical proximity effect correction model and checking matched curve model be correct to judge a plurality of developments back pattern that carries out pattern micro technology in advance.If the optical proximity effect correction model can not meet with checking matched curve model, then the expression back pattern that develops has pattern to link to each other (Pattern Bridge) or patterns of openings problem such as is not opened and taken place, so answer repeating step 140, to rebulid the optical proximity effect correction model.
In another embodiment, after step 150, also can carry out one second verification step (step 160), its objective is and verifying that raw graphics data is calibrated and be written on the photomask, and be transferred to the photoresist layer, and carry out after the pattern micro technology, whether pattern is correct behind the formed micro.The second above-mentioned verification step for example is, software behind the utilization checking OPC, compare optical proximity effect correction model and raw graphics data, whether correct with pattern after judging a plurality of micros that are formed in advance on the photoresist layer, words if not, then answer repeating step 140, to rebulid an optical proximity effect correction model.
From the above, the present invention can utilize existing software package (software behind the checking OPC), verifies the reliability and the accuracy of the optical proximity effect correction model of being set up.Similarly, so can save the cost of technology.
Please continue with reference to Fig. 1, step 170 is proofreaied and correct raw graphics data according to the optical proximity effect correction model, proofreaies and correct the post-plot data to obtain one.
Above-mentioned step 100～170 can be considered the bearing calibration of optical mask pattern, then also can proceed the formation method of optical mask pattern after step 170.
Please referring again to Fig. 1, step 180 will be revised the post-plot data and be written on the photomask.This step is written on revised draw data on one photomask for carrying out a write step, to form a pattern on this photomask.Wherein, above-mentioned write step comprises that use electron beam (e-beam) or laser beam (laser beams) are to carry out it.
In sum, have following advantage in the present invention at least:
1. the present invention revises effect and optical proximity effect that chemical micro technology is produced, set up an optical proximity effect correction model, so that optical mask pattern is proofreaied and correct, make on the wafer formed pattern comparatively accurate, therefore can improve the reliability and the yield rate of technology.
2. the present invention uses existing software package, can remove complicated inference from, can proofread and correct optical mask pattern, to obtain intrinsic configuration pattern, so can save the technology cost.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (15)
1, a kind of bearing calibration of optical mask pattern comprises:
One test light mask is provided, is formed with a plurality of master patterns according to a raw graphics data on this test light mask;
Those master patterns on this test light mask are transferred to one first photoresist layer, form a plurality of first development back patterns, and measure a first size of each those first development back pattern with correspondence;
Those first back patterns that develop are carried out a pattern micro technology, form pattern behind a plurality of first micros, and measure one second size of pattern behind each those first micro with correspondence;
Calculate a deviate of each those first size each those second sizes corresponding, and collect this raw graphics data, those first sizes, those second sizes and those deviates to obtain a database with it;
Utilize this data of database to set up an optical proximity effect correction model; And
According to this optical proximity effect correction model this raw graphics data is proofreaied and correct, proofreaied and correct the post-plot data to obtain one.
2, the bearing calibration of optical mask pattern as claimed in claim 1, also be included in set up this optical proximity effect correction model after, carry out one first verification step, to verify this optical proximity effect correction model.
3, the bearing calibration of optical mask pattern as claimed in claim 2, this first verification step wherein comprises:
Utilize this raw graphics data and those first sizes to set up a checking matched curve model; And
This optical proximity effect correction model and this checking matched curve model relatively, whether correct to judge a plurality of second development back patterns that are formed in advance on the one second photoresist layer, if not, then repeat to set up the step of this optical proximity effect correction model.
4, the bearing calibration of optical mask pattern as claimed in claim 2 wherein after this first verification step, also comprises and carries out one second verification step, to verify this optical proximity effect correction model.
5, the bearing calibration of optical mask pattern as claimed in claim 4, wherein this second verification step comprises relatively this optical proximity effect correction model and this raw graphics data, whether correct with pattern after judging a plurality of second micros that are formed in advance on the one second photoresist layer, if not, then repeat to set up the step of this optical proximity effect correction model.
6, the bearing calibration of optical mask pattern as claimed in claim 1, wherein this pattern micro technology comprises chemical micro technology, hot-fluid technology, chemical amplification group agent live width technology, Lei Wensheng type phase transfer photomask double exposure technology.
7, the bearing calibration of optical mask pattern as claimed in claim 1, wherein this raw graphics data comprises critical size, pattern density, live width gap ratio.
8, a kind of formation method of optical mask pattern comprises:
On a test light mask, form a plurality of master patterns according to a raw graphics data;
Those master patterns on this test light mask are transferred to one first photoresist layer, form a plurality of first development back patterns, and measure a first size of each those first development back pattern with correspondence;
Those first back patterns that develop are carried out a pattern micro technology, form pattern behind a plurality of first micros, and measure one second size of pattern behind each those first micro with correspondence;
Calculate a deviate of each those first size each those second sizes corresponding, and collect this raw graphics data, those first sizes, those second sizes and those deviates to obtain a database with it;
Utilize this data of database to set up an optical proximity effect correction model;
According to this optical proximity effect correction model this raw graphics data is proofreaied and correct, proofreaied and correct the post-plot data to obtain one; And
Carry out a write step, should proofread and correct the post-plot data and be written on the photomask, on this photomask, to form a pattern.
9, the formation method of optical mask pattern as claimed in claim 8, also be included in set up this optical proximity effect correction model after, carry out one first verification step, to verify this optical proximity effect correction model.
10, the formation method of optical mask pattern as claimed in claim 9, this first verification step wherein comprises:
Utilize this raw graphics data and those first sizes to set up a checking matched curve model; And
This optical proximity effect correction model and this checking matched curve model relatively, whether correct to judge a plurality of second development back patterns that are formed in advance on the one second photoresist layer, if not, then repeat to set up the step of this optical proximity effect correction model.
11, the formation method of optical mask pattern as claimed in claim 9 wherein behind this first verification step, also comprises and carries out one second verification step, to verify this optical proximity effect correction model.
12, the formation method of optical mask pattern as claimed in claim 11, wherein this second verification step comprises relatively this optical proximity effect correction model and this raw graphics data, whether correct with pattern after judging a plurality of second micros that are formed in advance on the one second photoresist layer, if not, then repeat to set up the step of this optical proximity effect correction model.
13, the formation method of optical mask pattern as claimed in claim 8, wherein this pattern micro technology comprises chemical micro technology, hot-fluid technology, chemical amplification group agent live width technology, Lei Wensheng type phase transfer photomask double exposure technology.
14, the formation method of optical mask pattern as claimed in claim 8, wherein this raw graphics data comprises critical size, pattern density, live width gap ratio.
15, the formation method of optical mask pattern as claimed in claim 8, wherein this write step uses electron beam or laser beam to carry out it.
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| CNA2005101070214A CN1940715A (en) | 2005-09-27 | 2005-09-27 | Optical mask pattern correcting method and its formation |
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Cited By (20)
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| CN101452204B (en) * | 2007-11-28 | 2010-09-29 | 上海华虹Nec电子有限公司 | Weighting type distance-measuring optical approximate correcting method |
| CN102147571A (en) * | 2010-02-05 | 2011-08-10 | 台湾积体电路制造股份有限公司 | Lithography method |
| CN102096309B (en) * | 2009-12-15 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN102087469B (en) * | 2009-12-03 | 2012-10-10 | 无锡华润上华半导体有限公司 | Optical proximity effect corrective modeling method and generating method of test pattern |
| CN102096310B (en) * | 2009-12-14 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | Method for correcting photoresist pattern and etching method |
| CN104201145A (en) * | 2014-08-26 | 2014-12-10 | 武汉新芯集成电路制造有限公司 | Control method of critical dimension in semiconductor production |
| CN104423178A (en) * | 2013-08-28 | 2015-03-18 | 旺宏电子股份有限公司 | Advanced Correction Method |
| CN104698761A (en) * | 2013-12-05 | 2015-06-10 | 中芯国际集成电路制造(上海)有限公司 | OPC model calibration method based on area |
| CN106200279A (en) * | 2016-09-22 | 2016-12-07 | 上海华虹宏力半导体制造有限公司 | A kind of method of sampling for lithography layout OPC and device |
| CN106980719A (en) * | 2017-03-21 | 2017-07-25 | 上海华力微电子有限公司 | Domain repeat unit optical proximity effect amendment consistency checking method |
| CN106997146A (en) * | 2017-04-17 | 2017-08-01 | 京东方科技集团股份有限公司 | A kind of preparation method of mask plate, manufacturing system and mask plate |
| CN107526864A (en) * | 2016-06-21 | 2017-12-29 | 朗姆研究公司 | The photoresist layout pattern near-correction predicted through edge placement error |
| CN109917615A (en) * | 2017-12-12 | 2019-06-21 | 联华电子股份有限公司 | The method for generating photomask using optical proximity effect correction model |
| CN112099309A (en) * | 2019-06-18 | 2020-12-18 | 中芯国际集成电路制造(上海)有限公司 | Correction method of optical proximity correction model |
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| CN101452204B (en) * | 2007-11-28 | 2010-09-29 | 上海华虹Nec电子有限公司 | Weighting type distance-measuring optical approximate correcting method |
| CN102087469B (en) * | 2009-12-03 | 2012-10-10 | 无锡华润上华半导体有限公司 | Optical proximity effect corrective modeling method and generating method of test pattern |
| CN102096310B (en) * | 2009-12-14 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | Method for correcting photoresist pattern and etching method |
| CN102096309B (en) * | 2009-12-15 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN102147571A (en) * | 2010-02-05 | 2011-08-10 | 台湾积体电路制造股份有限公司 | Lithography method |
| CN102147571B (en) * | 2010-02-05 | 2013-07-10 | 台湾积体电路制造股份有限公司 | Lithography method |
| CN104423178A (en) * | 2013-08-28 | 2015-03-18 | 旺宏电子股份有限公司 | Advanced Correction Method |
| CN104698761A (en) * | 2013-12-05 | 2015-06-10 | 中芯国际集成电路制造(上海)有限公司 | OPC model calibration method based on area |
| CN104201145B (en) * | 2014-08-26 | 2017-10-24 | 武汉新芯集成电路制造有限公司 | The control method of critical size in semiconductor production |
| CN104201145A (en) * | 2014-08-26 | 2014-12-10 | 武汉新芯集成电路制造有限公司 | Control method of critical dimension in semiconductor production |
| CN107526864B (en) * | 2016-06-21 | 2021-06-08 | 朗姆研究公司 | Photoresist design layout pattern proximity correction via edge placement error prediction |
| CN107526864A (en) * | 2016-06-21 | 2017-12-29 | 朗姆研究公司 | The photoresist layout pattern near-correction predicted through edge placement error |
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| CN106200279B (en) * | 2016-09-22 | 2018-06-26 | 上海华虹宏力半导体制造有限公司 | A kind of method of sampling and device for lithography layout OPC |
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| CN106980719A (en) * | 2017-03-21 | 2017-07-25 | 上海华力微电子有限公司 | Domain repeat unit optical proximity effect amendment consistency checking method |
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| CN106997146A (en) * | 2017-04-17 | 2017-08-01 | 京东方科技集团股份有限公司 | A kind of preparation method of mask plate, manufacturing system and mask plate |
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