CN113093469A - Method for correcting target pattern, manufacturing mask and forming semiconductor structure - Google Patents
Method for correcting target pattern, manufacturing mask and forming semiconductor structure Download PDFInfo
- Publication number
- CN113093469A CN113093469A CN202010020264.9A CN202010020264A CN113093469A CN 113093469 A CN113093469 A CN 113093469A CN 202010020264 A CN202010020264 A CN 202010020264A CN 113093469 A CN113093469 A CN 113093469A
- Authority
- CN
- China
- Prior art keywords
- pattern
- edge
- compensated
- target
- aei
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 124
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 130
- 238000012937 correction Methods 0.000 claims abstract description 111
- 238000012360 testing method Methods 0.000 claims description 32
- 238000001259 photo etching Methods 0.000 claims description 24
- 238000011161 development Methods 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 238000005192 partition Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 230000018109 developmental process Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 230000011218 segmentation Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
A method for correcting a target pattern, a method for manufacturing a mask and a method for forming a semiconductor structure are provided, wherein the method for correcting the target pattern comprises the following steps: providing a target graph, wherein the target graph extends along a first direction; dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area; dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated; obtaining an etching offset model; and respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge. The method is beneficial to improving the uniformity of the size of the pattern obtained after etching.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing processes, in particular to a method for correcting a target pattern, manufacturing a mask and forming a semiconductor structure.
Background
At present, with the development of very large scale integrated circuits, the design size of a device is smaller and smaller, and the change of the Critical Dimension (CD) of the device has more and more influence on the performance of the device, for example, the change of the Critical Dimension of a gate structure directly causes the change of the operation speed of the device.
The photoetching technology is a vital technology in the semiconductor manufacturing technology, and can realize the transfer of a pattern from a mask to the surface of a silicon wafer to form a semiconductor product meeting the design requirement. The photolithography process includes an exposure step, a development step performed after the exposure step, and an etching step after the development step. In the exposure step, light irradiates on a silicon wafer coated with photoresist through a light-transmitting area in a mask plate, and the photoresist undergoes a chemical reaction under the irradiation of the light; in the developing step, photoetching patterns are formed by utilizing the different dissolution degrees of photosensitive and non-photosensitive photoresist to a developer, so that the mask pattern is transferred to the photoresist; in the etching step, the silicon wafer is etched based on the photoetching pattern formed by the photoetching adhesive layer, and the pattern of the mask is further transferred to the silicon wafer.
The size of the specific pattern dimension after lithography is characterized by adi (after development inspection) CD (critical dimension), which is the size of the device dimension after etching. The etch Bias (Etching Bias) was obtained by calculating the difference between the ADI CD and the AEI CD.
However, in the prior art, the feature sizes of both ends and the center of a pattern obtained by correcting a target pattern by etching deviation and then transferring the mask pattern onto a silicon wafer are not consistent.
Disclosure of Invention
The invention aims to provide a method for correcting a target pattern, manufacturing a mask and forming a semiconductor structure, so as to improve the uniformity of the size of the pattern obtained after etching.
In order to solve the above technical problem, a technical solution of the present invention provides a method for correcting a target pattern, including: providing a target graph, wherein the target graph extends along a first direction; dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area; dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated; obtaining an etching offset model; and respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge.
Optionally, when the size of the target pattern in the first direction is greater than a preset value, the method for dividing the target pattern into a first central area and two first edge areas includes: acquiring the size l of the target graph in the first directionlong(ii) a Obtaining a first central region in the target pattern, the first central region having a dimension l along a first direction1And l is1Is greater than or equal to the minimum division value lmin(ii) a Acquiring a first edge area in the target graph, wherein the size of the first edge area along a first direction is l0And satisfy l0＝(llong-l1)/2。
Optionally, the method for dividing the edge of each first edge area target graph into a plurality of edges to be compensated includes: dividing the edge of the target graph of the first edge area into N edges to be compensated along a first direction, and taking l from Nlong/lminAn integer value of (d); obtaining a first side to be compensated from the plurality of sides to be compensated, wherein the first side to be compensated is the side to be compensated which is farthest from the first central area in the first direction, and the size of the first side to be compensated is l0-(N-1)lminThe sizes of (N-1) to-be-compensated sides except the first to-be-compensated side are all the minimum division value lmin。
Optionally, the etching offset model includes: a first correction model and a second correction model; the method for obtaining the etching offset model comprises the following steps: providing a second test pattern, wherein the size of the second test pattern in the first direction is larger than a preset value; after the exposure process, the development process and the etching process are carried out by taking the second test pattern as a mask,obtaining a second etching pattern; dividing the second etching pattern into a second central area and two second edge areas respectively positioned at two sides of the first central area, wherein the size of the second edge area is l0(ii) a Dividing each second edge area into a plurality of division patterns along the first direction, wherein the division pattern with the farthest distance to the second central area is a first division pattern, and the size l of the first division pattern along the first direction0-(N-1)lmin(ii) a Measuring the dimension CD of the first division patternAEI_end(ii) a Acquiring CDsAEI(ii) a According to CDAEI_endAnd CDAEITo obtain the first corrected model, the first corrected model is,
f(1)＝CDAEI_end-CDAEI；
obtaining a second correction model according to the first correction model f (1),
and x is more than or equal to 2 and less than or equal to N, and N is a natural number more than or equal to 2.
Optionally, the first compensation correction method includes: according to the first correction model, performing compensation correction on the first to-be-compensated edge of each first edge area; and according to the second correction model, performing compensation correction on the x-th section to-be-compensated edge of the first edge area, wherein x is more than or equal to 2 and is less than or equal to N, and N is a natural number more than or equal to 2.
Optionally, when the size of the target pattern along the first direction is smaller than a preset value, the method for dividing the target pattern into a first central area and two first edge areas includes: acquiring the size l of the target graph in the first directionshort(ii) a Obtaining a first central region in the target pattern, the first central region having a dimension l along a first direction3And l is3Is equal to the minimum partition value lmin(ii) a Acquiring a first edge area in the target graph, wherein the size of the first edge area along a first direction is l2And satisfy l2＝(lshort-l3)/2。
Optionally, the method for dividing the edge of the target graph in each first edge area into a plurality of edges to be compensated includes: dividing the edge of the target graph of the first edge area into N edges to be compensated along a first direction, and taking l from Nshort/lminAn integer value of (d); obtaining a first side to be compensated from the plurality of sides to be compensated, wherein the first side to be compensated is the side to be compensated which is farthest from the first central area in the first direction, and the size of the first side to be compensated is l2-(N-1)lminThe sizes of (N-1) to-be-compensated sides except the first to-be-compensated side are all the minimum division value lmin。
Optionally, the etching offset model includes: a third modified model, a fourth modified model and a fifth modified model; the method for obtaining the etching offset model comprises the following steps: providing a third test pattern, wherein the size of the third test pattern in the first direction is smaller than a preset value; taking the third test pattern as a mask, and carrying out an exposure process, a development process and an etching process to obtain a third etching pattern; dividing the third etching pattern into a third central area and two third edge areas positioned at two sides of the third central area, wherein the size of the third edge area is l2(ii) a Dividing each of the third etched patterns into a plurality of divided patterns, wherein among the plurality of divided patterns, a divided pattern having a farthest distance to the third central area is a first divided pattern, and a dimension l of the first divided pattern in the first direction2-(N-1)lmin(ii) a Measuring the dimension CD of the first division patternAEI_end_short(ii) a Measuring the dimension CD of the third etched pattern in the third central regionAEI_short(ii) a Acquiring CDsAEI(ii) a According to CDAEI_end_shortAnd CDAEI_shortAnd CDAEIAnd the third correction model is obtained by the following steps,
f(0)＝CDAEI_short-CDAEI；
obtaining a fourth correction model of f (1) ═ CD according to the third correction modelAEI_end_short-CDAEI_short+f(0)；
According to the third correction model and the fourth correction model, a fifth correction model is obtained
And x is more than or equal to 2 and less than or equal to N, and N is a natural number more than or equal to 2.
Optionally, the first compensation correction further includes: performing compensation correction on the edge of the target graph in the first central area; the second compensation correction method comprises the following steps: according to the third correction model, performing compensation correction on the edge of the target graph in the first central area; according to the fourth correction model, performing compensation correction on the first to-be-compensated edge of each first edge area; and according to a fifth correction model, performing compensation correction on the x-th section to-be-compensated edge of each first edge area, wherein x is more than or equal to 2 and is less than or equal to N, and N is a natural number more than or equal to 2.
Optionally, the CDAEIThe obtaining method comprises the following steps: providing a first test pattern; taking the mask plate made of the first test pattern as a mask, and carrying out an exposure process and a development process to obtain a first photoetching pattern; taking the first photoetching pattern as a mask, and carrying out an etching process to obtain a first etching pattern; measuring to obtain a second characteristic dimension CD of the first etched patternAEI。
Optionally, the method further includes: measuring to obtain a first characteristic dimension CD of a first photoetching patternADI(ii) a The method for acquiring the target graph comprises the following steps: measuring to obtain a first characteristic dimension CD of a first photoetching patternADI(ii) a According to the first characteristic dimension CDADIAnd a second characteristic dimension CDAEIDifference between them, obtaining the compensation value delta CDetching bias＝CDADI-CDAEI(ii) a Providing an initial target graph; according to the compensation value Δ CDetching biasAnd carrying out second compensation correction on the initial target graph to obtain the target graph.
Optionally, the CDAEIThe obtaining method comprises the following steps: providing a first test pattern; taking the mask plate made of the first test pattern as a mask, and carrying out an exposure process and a development process to obtain a first photoetching pattern; with the first lithographic patternTaking the shape of a mask, and carrying out an etching process to obtain a first etching pattern; measuring to obtain a second characteristic dimension CD of the first etched patternAEI。
Optionally, the method further includes: measuring to obtain a first characteristic dimension CD of a first photoetching patternADI(ii) a The method for acquiring the target graph comprises the following steps: measuring to obtain a first characteristic dimension CD of a first photoetching patternADI(ii) a According to the first characteristic dimension CDADIAnd a second characteristic dimension CDAEIDifference between them, obtaining the compensation value delta CDetching bias＝CDADI-CDAEI(ii) a Providing an initial target graph; according to the compensation value Δ CDetching biasAnd carrying out second compensation correction on the initial target graph to obtain the target graph.
Optionally, the preset value ranges from 700 nm to 1500 nm.
Correspondingly, the technical scheme of the invention also provides a manufacturing method of the mask, which comprises the following steps: providing a target graph, wherein the target graph extends along a first direction; dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area; dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated; obtaining an etching offset model; respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge; and manufacturing a mask plate by using the first compensation edge.
Correspondingly, the technical scheme of the invention also provides a method for forming the semiconductor structure, which comprises the following steps: providing a substrate; forming photoresist on the surface of the substrate; providing a mask plate, wherein the forming method of the mask plate comprises the following steps: providing a target graph, wherein the target graph extends along a first direction; dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area; dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated; obtaining an etching offset model; respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge; manufacturing a mask plate by using the first compensation edge; exposing the photoresist by taking the mask plate as a mask to form a patterned layer; and etching the substrate by taking the patterning layer as a mask.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
according to the technical scheme, in the target pattern correction method provided by the invention, each edge to be compensated is subjected to first compensation correction respectively according to the etching offset model to obtain a first compensation edge. The etching offset model can compensate for an etching loading effect (etching loading effect) caused by the non-uniform pattern density, so that the uniformity of the size of an etching pattern formed by a subsequent etching process, namely the uniformity of the size of the first central area and the first edge area of the etching pattern, is facilitated.
Further, the target pattern is obtained by performing a second compensation correction on the initial target pattern. The second compensation correction can reduce errors caused by etching deviation in the process of transferring the photoetching pattern to the substrate, and is beneficial to improving the accuracy of pattern transfer.
Drawings
FIGS. 1 to 2 are schematic structural diagrams of steps of a method for correcting a target pattern;
FIG. 3 is a flowchart illustrating a method for correcting a target pattern according to an embodiment of the invention;
fig. 4 to 8 are schematic structural diagrams illustrating steps of a target pattern correction method according to an embodiment of the invention;
fig. 9 to 13 are schematic structural diagrams of steps of a target pattern correction method according to another embodiment of the present invention.
Detailed Description
As described in the background art, when photolithography is performed by using the conventional method for correcting a target pattern, the uniformity of the size of the formed pattern is poor.
Fig. 1 to 2 are schematic structural diagrams of steps of a target pattern correction method.
Referring to fig. 1, a target pattern 100 is provided.
Referring to fig. 2, the target pattern 100 is compensated and corrected according to the etching deviation to obtain a compensation pattern 110; wherein the calculation formula of the etching deviation is as follows:
ΔCDetching bias＝CDADI-CDAEI
in the above method, the CDADIThe feature size of the lithography pattern obtained by performing the exposure process and the development process on the target pattern 100 without compensation correction is referred to as the feature size. The CDAEIThe feature size of the etched pattern obtained after the etching process is performed on the target pattern 100 without compensation correction. By calculation formula of etching deviation:
ΔCDetching bias＝CDADI-CDAEI；
obtaining etching deviation CDething bias(ii) a According to said Δ CDetching biasThe compensation correction is performed on the target pattern 100 to obtain a compensation pattern 110, which can reduce errors caused in a subsequent etching process, so that an etched pattern obtained by performing an exposure process, a development process and an etching process on the compensation pattern 110 can be close to the target pattern.
However, the etching process is susceptible to sparsely distributed patterns. The pattern density difference at the end of the target pattern 100 is large, and an etching loading effect (etching effect) is easily generated, resulting in a large size difference between the end and the center of the formed etching pattern. Due to Δ CD obtained by calculation formula of etching deviationetching biasIs single, so the compensation correction performed on the target pattern 100 is also single, and the more accurate compensation correction cannot be performed on each specific position in the target pattern 100, so that the size uniformity of the obtained etched pattern is still poor.
In order to solve the above technical problem, an embodiment of the present invention provides a method for correcting a target pattern, including: providing a target graph, wherein the target graph extends along a first direction; dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area; dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated; obtaining an etching offset model; and respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge. The method for correcting the target pattern is beneficial to the uniformity of the size of an etching pattern formed by a subsequent etching process.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 3, fig. 3 is a schematic flow chart of a target pattern correction method according to an embodiment of the present invention, including:
step S01: providing a target graph, wherein the target graph extends along a first direction;
step S02: dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area;
step S03: dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated;
step S04: obtaining an etching offset model;
step S05: and respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge.
And respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge. The etching offset model can compensate for an etching loading effect (etching loading effect) caused by the non-uniform pattern density, so that the uniformity of the size of an etching pattern formed by a subsequent etching process, namely the uniformity of the size of the first central area and the size of the first edge area of the etching pattern, is facilitated. The following detailed description is made with reference to the accompanying drawings.
Fig. 4 to 8 are schematic structural diagrams of steps of a target pattern correction method according to an embodiment of the present invention.
Referring to fig. 4, a target pattern 200 is provided, and the target pattern 200 extends along a first direction X.
In the present embodiment, the size of the target pattern 200 along the first direction X is 1600 nm.
The target pattern 200 is a pattern designed for a photoresist layer.
In this embodiment, the method for acquiring the target graph 200 includes: providing an initial target graph; according to the compensation value Δ CDetching biasAnd performing second compensation correction on the initial target graph to obtain the target graph 200.
Obtaining the compensation value Δ CDetching biasThe method comprises the following steps: providing a first test pattern; taking the mask plate made of the first test pattern as a mask, and carrying out an exposure process and a development process to obtain a first photoetching pattern; taking the first photoetching pattern as a mask, and carrying out an etching process to obtain a first etching pattern; measuring to obtain a second characteristic dimension CD of the first etched patternAEI(ii) a Measuring to obtain a first characteristic dimension CD of a first photoetching patternADI(ii) a According to the first characteristic dimension CDADIAnd a second characteristic dimension CDAEIDifference between them, obtaining the compensation value delta CDetching bias＝CDADI-CDAEI。
The target pattern 200 is obtained by performing a second compensation correction on the initial target pattern. The second compensation correction can reduce errors caused by etching deviation in the process of transferring the photoetching pattern to the substrate, and is beneficial to improving the accuracy of pattern transfer.
It should be noted that the compensation value Δ CD is obtainedetching biasA first characteristic dimension CDADIAnd a second characteristic dimension CDAEIThe first test pattern of (a) is required to satisfy that a dimension in the first direction X is larger than a preset value.
In the present embodiment, the target pattern 200 has a long bar shape. In other embodiments, the target pattern may also be a square.
In this embodiment, the number of the target patterns 200 is three. In other embodiments, the number of the target graphics is one or more than one.
Referring to fig. 5, the target graphic 200 is divided into a first central area a1 and two first edge areas B1 respectively located at two sides of the first central area a 1.
The method of dividing the target graphic 200 into one first center region a1 and two first edge regions B1 includes: obtaining a dimension l of the target pattern 200 in a first direction Xlong(ii) a Obtaining a first central region A1 in the target graphic 200, the first central region A1 having a dimension l in a first direction1And l is1Is greater than or equal to the minimum division value lmin(ii) a Obtaining a first edge zone B1 in the target graphic 200, the first edge zone B1 having a dimension l in a first direction X0And satisfy l0＝(llong-l1)/2。
Referring to fig. 6, fig. 6 is a partially enlarged view of the first edge region B1 of the target pattern 200 in fig. 5, and the edge of the target pattern 200 in each first edge region B1 is divided into a plurality of edges 210 to be compensated.
The method for dividing the edge of the target graph 200 in each first edge area B1 into a plurality of edges 210 to be compensated includes: dividing the edge of the target graph 200 of the first edge area B1 into N edges 210 to be compensated along a first direction X, and taking N as llong/lminAn integer value of (d); obtaining a first edge to be compensated 211 from the edges to be compensated 210, where the first edge to be compensated 211 is the edge to be compensated 210 farthest from the first central area a1 in the first direction X, and the first edge to be compensated 211 has a dimension l0-(N-1)lminThe sizes of the (N-1) sides to be compensated 210 except the first side to be compensated 211 are all the minimum division value lmin。
Note that the term "l" is usedminThe magnitude of the value is related to the resolution of the existing photolithography process.
Referring to fig. 7, an etching offset model is obtained.
The range of the preset value is 700-1500 nm.
It should be noted that the preset values and the sizes of the target patterns 200 themselves, the distances between adjacent target patterns 200, and the correlation between the target patterns 200 and the surrounding patterns are different, and therefore, the preset values are set differently when designing different target patterns.
In this embodiment, the preset value is set to 800 nm, and the dimension of the target pattern 200 along the first direction X is 1600 nm.
The size of the target pattern 200 is greater than a preset value, and the etching offset model comprises: a first correction model and a second correction model; the method for obtaining the etching offset model comprises the following steps: providing a second test pattern (not shown in the figure), wherein the size of the second test pattern in the first direction X is larger than a preset value; taking the second test pattern as a mask, and carrying out an exposure process, a development process and an etching process to obtain a second etching pattern; dividing the second etching pattern into a second center region A2 and two second edge regions B2 respectively located at two sides of the second center region A2, wherein the second edge region B2 has a dimension l0(ii) a Dividing each second edge region B2 into a plurality of division patterns 320 along the first direction X, wherein among the plurality of division patterns 320, the division pattern 320 farthest from the second central region B2 is a first division pattern 321, and the size l of the first division pattern 321 along the first direction X0-(N-1)lmin(ii) a Measuring the dimension CD of the first division pattern 321AEI_end(ii) a Acquiring CDsAEI(ii) a According to CDAEI_endAnd CDAEITo obtain the first corrected model, the first corrected model is,
f(1)＝CDAEI_end-CDAEI；
obtaining a second correction model according to the first correction model f (1),
and x is more than or equal to 2 and less than or equal to N, and N is a natural number more than or equal to 2.
The second modification model is obtained by modifying the feature size of the plurality of division patterns 320, such as the size CD of the first division pattern 321AEI_endThe characteristic dimension of the second segmentation graph and the characteristic dimension of the xth segmentation graph are obtained by linear simulation, wherein x is more than or equal to 2 and less than or equal to N, and N is largerOr a natural number equal to 2.
In this embodiment, the CD isAEIThe first etching pattern is measured under the condition that the size of the first test pattern along the first direction X is larger than a preset value.
In other embodiments, the CDAEIAnd may also be obtained for measuring the feature size of the second etched pattern.
Referring to fig. 8, fig. 8 is a schematic structural diagram based on fig. 6, and first compensation correction is performed on each edge to be compensated 210 according to the etching offset model to obtain a first compensation edge 250.
The etch bias model includes: a first correction model and a second correction model, the first compensation correction method comprising: according to the first correction model, the first edge to be compensated 211 of each first edge zone B1 is subjected to compensation correction; according to the second correction model, the x-th section to-be-compensated edge 210 of the first edge area B1 is compensated and corrected, wherein x is more than or equal to 2 and is less than or equal to N, and N is a natural number more than or equal to 2.
Specifically, when the edge to be compensated 210 is the first edge to be compensated 211, according to the first modified model,
f(1)＝CDAEI_end–CDAEI
the compensation value is obtained by moving the first compensation edge 211 by a distance of half the compensation value in a direction perpendicular to the first direction X and reducing the etching deviation.
When the edge 210 to be compensated is the edge 210 to be compensated except the first edge 211 to be compensated, according to the second modified model,
and X is more than or equal to 2 and less than or equal to N, N is a natural number more than or equal to 2, and the obtained compensation value enables (N-1) edges 210 to be compensated, namely a second edge to be compensated, a third edge to be compensated, an X edge to be compensated and an N edge to be compensated to move by the distance of half of the compensation value along the direction which is perpendicular to the first direction X and reduces the etching deviation.
Specifically, when the edge to be compensated 210 is a second edge to be compensated, the compensation value f (2) of the second edge to be compensated is obtained by using a second correction model with x being 2.
In this embodiment, the edge 210 to be compensated is moved by a distance of half of the compensation value along a direction close to the central axis of the target pattern 200.
And respectively carrying out first compensation correction on each edge to be compensated 210 according to the etching offset model to obtain a first compensation edge 250. The etching offset model can compensate for an etching loading effect (etching loading effect) caused by the non-uniform pattern density, thereby facilitating the uniformity of the size of the etched pattern formed by the subsequent etching process, i.e., the uniformity of the sizes of the first central region a1 and the first edge region B1 of the etched pattern.
Fig. 9 to 13 are schematic structural diagrams of steps of a target pattern correction method in another embodiment of the present invention, and the difference between this embodiment and the above embodiment is that the size of the target pattern in the first direction is different, so that the etching compensation model for the target pattern is different.
Referring to fig. 9, a target pattern 400 is provided, and the target pattern 400 extends along a first direction X.
In the present embodiment, the size of the target pattern 400 in the first direction X is 500 nm.
The target pattern 400 is a pattern designed for a photoresist layer.
The target pattern 400 is the same as the target pattern 200 in the above embodiment, and is not described herein again.
In the present embodiment, the size of the target pattern 400 along the first direction X is 500 nm.
In this embodiment, the size of the target pattern 400 along the first direction X is smaller than a preset value.
Referring to fig. 10, the target graphic 400 is divided into a first central area a1 and two first edge areas B1 respectively located at two sides of the first central area a 1.
The method of dividing the target graphic 400 into one first center area a1 and two first edge areas B1 includes:obtaining a dimension l of the target pattern 400 in a first directionshort(ii) a Obtaining a first central region A1 in the target graphic 400, the first central region A1 having a dimension l along a first direction X3And l is3Is equal to the minimum partition value lmin(ii) a Obtaining a first edge zone B1 in the target graphic 400, the first edge zone B1 having a dimension l in a first direction X2And satisfy l2＝(lshort-l3)/2。
Referring to fig. 11, fig. 11 is a partially enlarged view of the first edge area B1 of the target pattern 400 in fig. 10, and the edge of the target pattern 400 in each first edge area B1 is divided into a plurality of edges 410 to be compensated.
The method for dividing the edge of the target graph 400 in each first edge zone B1 into a plurality of edges 410 to be compensated includes: dividing the edge of the target graph 400 of the first edge area B1 into N edges 410 to be compensated along a first direction X, and taking N as lshort/lminAn integer value of (d); obtaining a first side to be compensated 411 from the plurality of sides to be compensated 410, wherein the first side to be compensated 411 is the side to be compensated 410 which is farthest from the first central area a1 in the first direction X, and the first side to be compensated 411 has a size l2-(N-1)lminThe sizes of (N-1) sides to be compensated 410 except the first side to be compensated 411 are all the minimum division value lmin。
Note that the term "l" is usedminThe magnitude of the value is related to the resolution of the existing photolithography process.
Referring to fig. 12, an etching offset model is obtained.
The range of the preset value is 700-1500 nm.
In this embodiment, the preset value is set to 800 nm, and the dimension of the target pattern 400 along the first direction X is 500 nm.
The dimension of the target pattern 400 along the first direction X is smaller than a preset value, and the etching offset model includes: a third modified model, a fourth modified model and a fifth modified model; the method for obtaining the etching offset model comprises the following steps: providing a third test pattern (not shown) on the first test patternThe size of the third test pattern in the direction X is smaller than a preset value; taking the third test pattern as a mask, and carrying out an exposure process, a development process and an etching process to obtain a third etching pattern; dividing the third etched pattern into a third central region A3 and two third edge regions B3 located at both sides of the third central region A3, wherein the third edge region B3 has a dimension l2(ii) a Dividing each of the third etch patterns into a plurality of division patterns 520, wherein among the plurality of division patterns 520, a division pattern 520 having a farthest distance to a third central area A3 is a first division pattern 521, and a dimension l of the first division pattern 521 along the first direction X2-(N-1)lmin(ii) a Measuring the dimension CD of the first division pattern 521AEI_end_short(ii) a The dimension CD of the third etched pattern of the third central region A3 was measuredAEI_short(ii) a Acquiring CDsAEI(ii) a According to CDAEI_end_shortAnd CDAEI_shortAnd CDAEIAnd the third correction model is obtained by the following steps,
f(0)＝CDAEI_short-CDAEI；
obtaining a fourth correction model of f (1) ═ CD according to the third correction modelAEI_end_short-CDAEI_short+f(0)；
According to the third correction model and the fourth correction model, a fifth correction model is obtained
And x is more than or equal to 2 and less than or equal to N, and N is a natural number more than or equal to 2.
The fifth modification model is obtained by applying a feature size of the plurality of division patterns 520, such as the size CD of the first division pattern 521AEI_endAnd the characteristic size of the second segmentation graph and the characteristic size of the x-th segmentation graph are obtained by linear simulation, wherein x is more than or equal to 2 and is less than or equal to N, and N is a natural number more than or equal to 2.
In this embodiment, the CD isAEIWhen the dimension of the first test pattern along the first direction X is larger than the preset valueAnd measuring the first etching pattern.
Referring to fig. 13, fig. 13 is a schematic structural diagram based on fig. 12, and first compensation correction is performed on each edge 410 to be compensated according to an etching offset model to obtain a first compensation edge 370.
The first compensation correction further comprises: performing compensation correction on the edge of the target pattern 400 of the first central area a 1; the first compensation correction method comprises the following steps: performing compensation correction on the edge of the target pattern 400 of the first central area a1 according to the third correction model; according to the fourth correction model, the first edge to be compensated 411 of each first edge area B1 is compensated and corrected; and according to a fifth correction model, performing compensation correction on the x-th section to-be-compensated edge of each first edge area B1, wherein x is more than or equal to 2 and is less than or equal to N, and N is a natural number more than or equal to 2.
Specifically, according to the third modified model, f (0) ═ CDAEI_short-CDAEIThe compensation value is obtained such that the edge of the target pattern 400 of the first central region a1 is moved by a distance of half the compensation value in a direction perpendicular to the first direction X and reducing the etching deviation.
Specifically, when the edge 410 to be compensated is the first edge 411 to be compensated, according to the fourth modified model,
f(1)＝CDAEI_end_short-CDAEI_short+f(0)；
a compensation value is obtained by moving the first compensation edge 461 by a distance of half the compensation value in a direction perpendicular to the first direction X and reducing the etching deviation.
When the edge 410 to be compensated is the edge 410 to be compensated other than the first edge 411 to be compensated, according to the fifth modified model,
and X is more than or equal to 2 and less than or equal to N, N is a natural number more than or equal to 2, and a compensation value is obtained, so that (N-1) edges to be compensated 410, namely a second edge to be compensated, a third edge to be compensated, an X edge to be compensated and an N edge to be compensated, move by a distance of half of the compensation value along a direction which is perpendicular to the first direction X and reduces the etching deviation.
Specifically, when the edge 410 to be compensated is a second edge to be compensated, a compensation value f (2) of the second edge to be compensated is obtained by using a fifth correction model with x being 2.
In this embodiment, the edge 410 to be compensated is moved by a distance of half the compensation value in a direction close to the central axis of the target pattern 400.
Correspondingly, the embodiment of the invention also provides a manufacturing method of the mask, which comprises the steps of providing a target graph, wherein the target graph extends along the first direction; dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area; dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated; obtaining an etching offset model; respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge; and manufacturing a mask plate by using the first compensation edge.
Correspondingly, the invention also provides a method for forming the semiconductor structure, which comprises the following steps: providing a substrate; forming photoresist on the surface of the substrate; providing a mask plate, wherein the forming method of the mask plate comprises the following steps: providing a target graph, wherein the target graph extends along a first direction; dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area; dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated; obtaining an etching offset model; respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge; manufacturing a mask plate by using the first compensation edge; exposing the photoresist by taking the mask plate as a mask to form a patterned layer; and etching the substrate by taking the patterning layer as a mask.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (16)
1. A method for correcting a target pattern, comprising:
providing a target graph, wherein the target graph extends along a first direction;
dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area;
dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated;
obtaining an etching offset model;
and respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge.
2. The method for correcting an object pattern according to claim 1, wherein the dividing the object pattern into a first center area and two first edge areas when the size of the object pattern in the first direction is larger than a preset value comprises: acquiring the size l of the target graph in the first directionlong(ii) a Obtaining a first central region in the target pattern, the first central region having a dimension l along a first direction1And l is1Is greater than or equal to the minimum division value lmin(ii) a Acquiring a first edge area in the target graph, wherein the size of the first edge area along a first direction is l0And satisfy l0＝(llong-l1)/2。
3. The method for correcting the target pattern according to claim 2, wherein the step of dividing the edge of the target pattern in each of the first edge areas into the plurality of edges to be compensated comprises: dividing the edge of the target graph of the first edge area into N edges to be compensated along a first direction, and taking l from Nlong/lminAn integer value of (d); obtaining a first side to be compensated from the plurality of sides to be compensated, wherein the first side to be compensated is the side to be compensated which is farthest from the first central area in the first direction, and the ruler of the first side to be compensatedCun is just like0-(N-1)lminThe sizes of (N-1) to-be-compensated sides except the first to-be-compensated side are all the minimum division value lmin。
4. The method for correcting a target pattern according to claim 3, wherein the etching offset model comprises: a first correction model and a second correction model; the method for obtaining the etching offset model comprises the following steps: providing a second test pattern, wherein the size of the second test pattern in the first direction is larger than a preset value; taking the second test pattern as a mask, and carrying out an exposure process, a development process and an etching process to obtain a second etching pattern; dividing the second etching pattern into a second central area and two second edge areas respectively positioned at two sides of the first central area, wherein the size of the second edge area is l0(ii) a Dividing each second edge area into a plurality of division patterns along the first direction, wherein the division pattern with the farthest distance to the second central area is a first division pattern, and the size l of the first division pattern along the first direction0-(N-1)lmin(ii) a Measuring the dimension CD of the first division patternAEI_end(ii) a Acquiring CDsAEI(ii) a According to CDAEI_endAnd CDAEITo obtain the first corrected model, the first corrected model is,
f(1)＝CDAEI_end-CDAEI；
obtaining a second correction model according to the first correction model f (1),
and x is more than or equal to 2 and less than or equal to N, and N is a natural number more than or equal to 2.
5. The method for correcting a target pattern according to claim 4, wherein the first compensation correction method comprises: according to the first correction model, performing compensation correction on the first to-be-compensated edge of each first edge area; and according to the second correction model, performing compensation correction on the x-th section to-be-compensated edge of the first edge area, wherein x is more than or equal to 2 and is less than or equal to N, and N is a natural number more than or equal to 2.
6. The method for correcting an object pattern according to claim 1, wherein the dividing the object pattern into a first center area and two first edge areas when the size of the object pattern in the first direction is smaller than a preset value comprises: acquiring the size l of the target graph in the first directionshort(ii) a Obtaining a first central region in the target pattern, the first central region having a dimension l along a first direction3And l is3Is equal to the minimum partition value lmin(ii) a Acquiring a first edge area in the target graph, wherein the size of the first edge area along a first direction is l2And satisfy l2＝(lshort-l3)/2。
7. The method for correcting the target pattern according to claim 6, wherein the step of dividing the edge of the target pattern in each of the first edge areas into the edges to be compensated comprises: dividing the edge of the target graph of the first edge area into N edges to be compensated along a first direction, and taking l from Nshort/lminAn integer value of (d); obtaining a first side to be compensated from the plurality of sides to be compensated, wherein the first side to be compensated is the side to be compensated which is farthest from the first central area in the first direction, and the size of the first side to be compensated is l2-(N-1)lminThe sizes of (N-1) to-be-compensated sides except the first to-be-compensated side are all the minimum division value lmin。
8. The method for correcting a target pattern according to claim 7, wherein the etching offset model comprises: a third modified model, a fourth modified model and a fifth modified model; the method for obtaining the etching offset model comprises the following steps: providing a third test pattern, wherein the size of the third test pattern in the first direction is smaller than a preset value; taking the third test pattern as a mask to perform an exposure process, a development process and an etching processAfter the process, obtaining a third etching pattern; dividing the third etching pattern into a third central area and two third edge areas positioned at two sides of the third central area, wherein the size of the third edge area is l2(ii) a Dividing each of the third etched patterns into a plurality of divided patterns, wherein among the plurality of divided patterns, a divided pattern having a farthest distance to the third central area is a first divided pattern, and a dimension l of the first divided pattern in the first direction2-(N-1)lmin(ii) a Measuring the dimension CD of the first division patternAEI_end_short(ii) a Measuring the dimension CD of the third etched pattern in the third central regionAEI_short(ii) a Acquiring CDsAEI(ii) a According to CDAEI_end_shortAnd CDAEI_shortAnd CDAEIAnd the third correction model is obtained by the following steps,
f(0)＝CDAEI_short-CDAEI；
obtaining a fourth correction model of f (1) ═ CD according to the third correction modelAEI_end_short-CDAEI_short+f(0)；
According to the third correction model and the fourth correction model, a fifth correction model is obtained
And x is more than or equal to 2 and less than or equal to N, and N is a natural number more than or equal to 2.
9. The method for correcting a target pattern according to claim 8, wherein the first compensation correction further comprises: performing compensation correction on the edge of the target graph in the first central area; the second compensation correction method comprises the following steps: according to the third correction model, performing compensation correction on the edge of the target graph in the first central area; according to the fourth correction model, performing compensation correction on the first to-be-compensated edge of each first edge area; and according to a fifth correction model, performing compensation correction on the x-th section to-be-compensated edge of each first edge area, wherein x is more than or equal to 2 and is less than or equal to N, and N is a natural number more than or equal to 2.
10. The method for correcting the target pattern according to claim 4, wherein the CD is set to be in a state where the CD is not in contact with the target patternAEIThe obtaining method comprises the following steps: providing a first test pattern; taking the mask plate made of the first test pattern as a mask, and carrying out an exposure process and a development process to obtain a first photoetching pattern; taking the first photoetching pattern as a mask, and carrying out an etching process to obtain a first etching pattern; measuring to obtain a second characteristic dimension CD of the first etched patternAEI。
11. The method for correcting a target pattern according to claim 10, further comprising: measuring to obtain a first characteristic dimension CD of a first photoetching patternADI(ii) a The method for acquiring the target graph comprises the following steps: measuring to obtain a first characteristic dimension CD of a first photoetching patternADI(ii) a According to the first characteristic dimension CDADIAnd a second characteristic dimension CDAEIDifference between them, obtaining the compensation value delta CDetchingbias＝CDADI-CDAEI(ii) a Providing an initial target graph; according to the compensation value Δ CDetchingbiasAnd carrying out second compensation correction on the initial target graph to obtain the target graph.
12. The method for correcting a target pattern according to claim 8, wherein the CD is a CDAEIThe obtaining method comprises the following steps: providing a first test pattern; taking the mask plate made of the first test pattern as a mask, and carrying out an exposure process and a development process to obtain a first photoetching pattern; taking the first photoetching pattern as a mask, and carrying out an etching process to obtain a first etching pattern; measuring to obtain a second characteristic dimension CD of the first etched patternAEI。
13. The method for correcting a target pattern according to claim 12, further comprising: measuring to obtain a first characteristic dimension CD of a first photoetching patternADI(ii) a The method for acquiring the target graph comprises the following steps: measuring to obtain a first characteristic dimension CD of a first photoetching patternADI(ii) a According to the first characteristicCD with critical dimensionADIAnd a second characteristic dimension CDAEIDifference between them, obtaining the compensation value delta CDetchingbias＝CDADI-CDAEI(ii) a Providing an initial target graph; according to the compensation value Δ CDetchingbiasAnd carrying out second compensation correction on the initial target graph to obtain the target graph.
14. The method for correcting a target pattern according to claim 2, wherein the predetermined value is in a range of 700 nm to 1500 nm.
15. A manufacturing method of a mask is characterized by comprising the following steps:
providing a target graph, wherein the target graph extends along a first direction;
dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area;
dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated;
obtaining an etching offset model;
respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge;
and manufacturing a mask plate by using the first compensation edge.
16. A method of forming a semiconductor structure, comprising:
providing a substrate;
forming photoresist on the surface of the substrate;
providing a mask plate, wherein the forming method of the mask plate comprises the following steps: providing a target graph, wherein the target graph extends along a first direction; dividing the target graph into a first central area and two first edge areas which are respectively positioned at two sides of the first central area; dividing the edge of the target graph of each first edge area into a plurality of edges to be compensated; obtaining an etching offset model; respectively carrying out first compensation correction on each edge to be compensated according to the etching offset model to obtain a first compensation edge;
manufacturing a mask plate by using the first compensation edge;
exposing the photoresist by taking the mask plate as a mask to form a patterned layer;
and etching the substrate by taking the patterning layer as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010020264.9A CN113093469A (en) | 2020-01-08 | 2020-01-08 | Method for correcting target pattern, manufacturing mask and forming semiconductor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010020264.9A CN113093469A (en) | 2020-01-08 | 2020-01-08 | Method for correcting target pattern, manufacturing mask and forming semiconductor structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113093469A true CN113093469A (en) | 2021-07-09 |
Family
ID=76663696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010020264.9A Pending CN113093469A (en) | 2020-01-08 | 2020-01-08 | Method for correcting target pattern, manufacturing mask and forming semiconductor structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113093469A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113741154A (en) * | 2021-08-24 | 2021-12-03 | 长江先进存储产业创新中心有限责任公司 | Measurement method of alignment deviation, semiconductor device and preparation method thereof |
| CN115580994A (en) * | 2022-11-18 | 2023-01-06 | 惠州市金百泽电路科技有限公司 | Control method for improving etching precision of bonding IC |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060008135A1 (en) * | 2004-07-09 | 2006-01-12 | Shigeki Nojima | Semiconductor integrated circuit pattern verification method, photomask manufacturing method, semiconductor integrated circuit device manufacturing method, and program for implementing semiconductor integrated circuit pattern verification method |
| US20070280547A1 (en) * | 2006-04-20 | 2007-12-06 | Tadashi Mitsui | Image processing apparatus, image processing method, defect detection method, semiconductor device manufacturing method, and program |
| US20120274683A1 (en) * | 2011-04-28 | 2012-11-01 | Casio Computer Co., Ltd. | Print apparatus and print control method |
| US20130024824A1 (en) * | 2011-07-20 | 2013-01-24 | Chia-Wei Huang | Optical Proximity Correction Method |
| KR20140093801A (en) * | 2013-01-17 | 2014-07-29 | 국방과학연구소 | Region-based edge enhancement method for short-distance thermal target tracking |
| CN109765751A (en) * | 2019-03-29 | 2019-05-17 | 德淮半导体有限公司 | The production method of optical adjacent correction method and mask plate |
| CN110007554A (en) * | 2018-01-05 | 2019-07-12 | 中芯国际集成电路制造(上海)有限公司 | The production method of optical adjacent correction method and mask plate |
| CN110119061A (en) * | 2018-02-06 | 2019-08-13 | 中芯国际集成电路制造(上海)有限公司 | The production method of optical adjacent correction method and mask plate |
-
2020
- 2020-01-08 CN CN202010020264.9A patent/CN113093469A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060008135A1 (en) * | 2004-07-09 | 2006-01-12 | Shigeki Nojima | Semiconductor integrated circuit pattern verification method, photomask manufacturing method, semiconductor integrated circuit device manufacturing method, and program for implementing semiconductor integrated circuit pattern verification method |
| US20070280547A1 (en) * | 2006-04-20 | 2007-12-06 | Tadashi Mitsui | Image processing apparatus, image processing method, defect detection method, semiconductor device manufacturing method, and program |
| US20120274683A1 (en) * | 2011-04-28 | 2012-11-01 | Casio Computer Co., Ltd. | Print apparatus and print control method |
| US20130024824A1 (en) * | 2011-07-20 | 2013-01-24 | Chia-Wei Huang | Optical Proximity Correction Method |
| KR20140093801A (en) * | 2013-01-17 | 2014-07-29 | 국방과학연구소 | Region-based edge enhancement method for short-distance thermal target tracking |
| CN110007554A (en) * | 2018-01-05 | 2019-07-12 | 中芯国际集成电路制造(上海)有限公司 | The production method of optical adjacent correction method and mask plate |
| CN110119061A (en) * | 2018-02-06 | 2019-08-13 | 中芯国际集成电路制造(上海)有限公司 | The production method of optical adjacent correction method and mask plate |
| CN109765751A (en) * | 2019-03-29 | 2019-05-17 | 德淮半导体有限公司 | The production method of optical adjacent correction method and mask plate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113741154A (en) * | 2021-08-24 | 2021-12-03 | 长江先进存储产业创新中心有限责任公司 | Measurement method of alignment deviation, semiconductor device and preparation method thereof |
| CN115580994A (en) * | 2022-11-18 | 2023-01-06 | 惠州市金百泽电路科技有限公司 | Control method for improving etching precision of bonding IC |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110119061B (en) | Optical proximity correction method and manufacturing method of mask | |
| CN108333865B (en) | Method for correcting mask graph | |
| US7480890B2 (en) | Method for correcting and configuring optical mask pattern | |
| CN110221515B (en) | Optical proximity correction method and manufacturing method of mask | |
| CN101432658B (en) | Method and system for controlling critical dimensions of structures formed on a wafer in semiconductor processing | |
| US8607168B2 (en) | Contour alignment for model calibration | |
| CN110007554B (en) | Optical proximity correction method and manufacturing method of mask | |
| US6458606B2 (en) | Etch bias distribution across semiconductor wafer | |
| CN110119062B (en) | Optical proximity correction method, mask manufacturing method and patterning process | |
| JP5332007B2 (en) | Position accuracy judgment of double exposure lithography using optical measurement | |
| US20110202893A1 (en) | Contour Self-Alignment For Optical Proximity Correction Model Calibration | |
| CN113093475A (en) | Overlay accuracy detection method and overlay deviation compensation method | |
| JP2002122977A (en) | Method for producing photomask, photomask and exposure method | |
| CN113093469A (en) | Method for correcting target pattern, manufacturing mask and forming semiconductor structure | |
| CN114253064A (en) | Optical proximity correction method | |
| US6420077B1 (en) | Contact hole model-based optical proximity correction method | |
| CN110221514B (en) | Optical proximity correction method and manufacturing method of mask | |
| CN113050368A (en) | Optical proximity correction method and mask manufacturing method | |
| CN107643651B (en) | Design method of photoetching auxiliary pattern | |
| CN114077166B (en) | Method for obtaining critical dimension rocking curve of photoetching technology | |
| US9017903B2 (en) | Mask overlay control | |
| CN113835293B (en) | Optical proximity correction method and mask manufacturing method | |
| CN115047730A (en) | Test wafer, manufacturing method thereof and photoresist thickness evaluation method | |
| CN114063380A (en) | Pattern correction method and method for forming semiconductor structure | |
| US9377701B2 (en) | Mask overlay control |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |