WO2024021849A1 - 一种单晶炉用加热器及单晶炉 - Google Patents

一种单晶炉用加热器及单晶炉 Download PDF

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Publication number
WO2024021849A1
WO2024021849A1 PCT/CN2023/097422 CN2023097422W WO2024021849A1 WO 2024021849 A1 WO2024021849 A1 WO 2024021849A1 CN 2023097422 W CN2023097422 W CN 2023097422W WO 2024021849 A1 WO2024021849 A1 WO 2024021849A1
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WO
WIPO (PCT)
Prior art keywords
foot plate
electrode
electrode foot
heating cylinder
heater
Prior art date
Application number
PCT/CN2023/097422
Other languages
English (en)
French (fr)
Inventor
张朝光
王莎莎
程磊
文永飞
成路
马少林
丁彪
Original Assignee
隆基绿能科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202221949180.4U external-priority patent/CN218291173U/zh
Priority claimed from CN202222570281.7U external-priority patent/CN219099375U/zh
Application filed by 隆基绿能科技股份有限公司 filed Critical 隆基绿能科技股份有限公司
Publication of WO2024021849A1 publication Critical patent/WO2024021849A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the present application relates to the technical field of crystalline silicon manufacturing equipment, and in particular to a heater for a single crystal furnace and a single crystal furnace.
  • the existing technology generally adopts reducing the rotation of the crystal pulling crucible and using an oxygen-reducing heater to reduce the oxygen content in the head of the crystal ingot.
  • the purpose of this application is to provide a heater for a single crystal furnace and a single crystal furnace to solve the problem that existing heaters used in the single crystal growth process cannot effectively balance the quality of the crystal ingot and the production cost.
  • This application proposes a heater for a single crystal furnace, which includes a heating cylinder and an electrode foot plate;
  • the heating cylinder is a cylindrical structure arranged around the crucible in the single crystal furnace
  • the electrode foot plate includes a first electrode foot plate and a second electrode foot plate;
  • the first electrode foot plate supports one side of the heating tube and is used to connect with the first electrode of the power supply;
  • the second electrode foot plate supports the other side of the heating tube and is used to connect with the second electrode of the power supply;
  • the resistivity of the electrode foot plate is smaller than the resistivity of the heating tube.
  • the resistivity of the heating cylinder is greater than or equal to 11 ⁇ m, and the resistivity of the electrode foot plate is less than or equal to 10 ⁇ m.
  • the resistivity of the heating cylinder is greater than or equal to 12 ⁇ m, and the resistivity of the electrode foot plate is less than or equal to 9 ⁇ m.
  • the thickness of the heating tube in the radial direction is 15 to 30 mm; the height of the heating tube in the axial direction is 150 to 400 mm;
  • the cross-sectional thickness of the first electrode foot plate and the second electrode foot plate is both 25-40 mm, and the cross-sectional width of the first electrode foot plate and the second electrode foot plate is 70-95 mm.
  • the heating cylinder includes a plurality of splicing pieces, and the plurality of splicing pieces are enclosed and connected to form the heating cylinder.
  • the projection of each splicing piece is in a circular arc shape along the axial direction of the heating cylinder.
  • the central angle of the arc shape is 60 to 180°.
  • the central angles of each spliced piece are the same.
  • the upper part of each splicing piece is thinned, and the thickness of the thinned area on the upper part of the splicing piece is not less than 12 mm.
  • each spliced piece gradually becomes thinner from the lower end to the upper end, and the thinnest thickness of the spliced piece is not less than 12 mm.
  • the first electrode foot plate and the second electrode foot plate are respectively fixedly connected to two oppositely distributed splicing pieces.
  • This application proposes another heater for single crystal furnaces, which includes a heating cylinder and an electrode foot plate;
  • the heating cylinder is a cylindrical structure arranged around the crucible in the single crystal furnace
  • the electrode foot plate includes a first electrode foot plate and a second electrode foot plate;
  • the first electrode foot plate supports one side of the heating tube and is used to connect with the first electrode of the power supply;
  • the second electrode foot plate supports the other side of the heating tube and is used to communicate with the second electrode of the power supply. connect;
  • the resistance ratio between the heating tube and the electrode foot plate is 0.85-1:0-0.15.
  • the absolute value of the resistance value of the heating tube is 25-60 m ⁇
  • the absolute value of the resistance value of the electrode foot plate is 0-1 m ⁇ .
  • This application also proposes a single crystal furnace, which includes a furnace body and a single crystal furnace heater as described above installed inside the furnace body.
  • this application includes the following advantages:
  • the heater for a single crystal furnace in this application includes a heating cylinder and an electrode foot plate; the heating cylinder is a cylindrical structure arranged around the crucible in the single crystal furnace; the electrode foot plate includes a first electrode foot plate and a second electrode foot plate; the first electrode foot plate supports One side of the heating tube is used to connect to the first electrode of the power supply; the second electrode foot plate supports the other side of the heating tube and is used to connect to the second electrode of the power supply; the resistivity of the electrode foot plate is smaller than the resistance of the heating tube Among them, the heating cylinder and electrode foot plate of the heater are graded in resistivity, and the embryo body material with low resistivity is used to make the electrode foot plate, and the embryo body with high resistivity is made into the heating cylinder.
  • the thickness of the electrode foot plate can effectively increase the calorific value of the heating tube and reduce the calorific value of the electrode foot plate, thereby reducing the oxygen content of the head of the produced crystal ingot, and is conducive to cost reduction and on-site transportation.
  • the present application provides a heater, including: a heating cylinder, which is used to cover the outside of the crucible of a single crystal furnace to heat the crucible.
  • the heating cylinder includes an opposite first end surface and a second end surface, so The heating cylinder further includes a first slot extending from the first end face to the second end face, and a second slot extending from the second end face to the first end face, the first slot and the second slots are alternately arranged along the circumferential direction of the heating cylinder, and the distance between the end of the second slot and the first end surface is smaller than the distance between the end of the first slot and the third end surface.
  • the distance between the two end faces and the electrode foot plate are used to connect with the electrode of the single crystal furnace.
  • the electrode foot plate is connected to one end of the heating tube close to the second end face.
  • the length of the first slot is no less than 81% of the length of the heating cylinder, and the length of the second slot is no more than 89% of the length of the heating cylinder.
  • the distance between the end of the first slot and the second end face is no less than 50 mm, and the distance between the end of the second slot and the first end face is no more than 45 mm.
  • the width of the first slot and the width of the second slot are 10 mm to 40 mm.
  • the thickness of the electrode foot plate is 32mm to 40mm, and the width is 150mm to 175mm.
  • the heating cylinder includes a plurality of splicing pieces, and two adjacent splicing pieces are connected through a connecting plate, so that the plurality of splicing pieces are enclosed into a cylindrical structure.
  • the resistivities of each splice piece and the connecting plate are consistent.
  • the heating cylinder is configured to be integrally formed.
  • the heating cylinder is made of graphite material or carbon material.
  • this application also provides a single crystal furnace, including a crucible and the heater in the above technical solution, wherein the length of the heating tube is 0.35 to 0.5 times the height of the crucible.
  • the heat generation is adjusted by making the distance between the end of the second slot and the first end face smaller than the distance between the end of the first slot and the second end face.
  • the length of the heating tube of the heater is 0.35-0.35 of the total height of the crucible. 0.5 times. Therefore, the length of the heating barrel provided in this application is shorter than the length of the conventional heating barrel, which can keep the high-temperature area of the heating barrel away from the bottom of the crucible and reduce the oxygen content at the head of the crystal ingot.
  • Figure 1 is a schematic structural diagram of a heater for a single crystal furnace provided by an embodiment of the present application
  • Figure 2 is a diagram of crystal rods grown by the heater provided by the embodiment of the present application and by heaters in the prior art. Oxygen content comparison chart;
  • Figure 3 is a schematic structural diagram of a heater in a specific embodiment of the present application.
  • Figure 4 is a schematic structural diagram of the heating cylinder in the specific embodiment of the present application.
  • Figure 5 is a schematic structural diagram of a support leg in a specific embodiment of the present application.
  • the heater for a single crystal furnace mainly generates heat through resistance energization, and uses crucible conduction to heat the silicon material in the crucible, thereby generating silicon liquid for growing single crystal silicon.
  • the resistivity of the heating cylinder and the electrode foot plate of the existing heater is the same.
  • an embodiment of the present application provides a heater 10 for a single crystal furnace.
  • the heating cylinder 11 and the electrode foot plate 12 are arranged;
  • the heating cylinder 11 is a cylindrical structure arranged around the crucible in the single crystal furnace.
  • the electrode foot plate 12 includes a first electrode foot plate 121 and a second electrode foot plate 122;
  • the first electrode foot plate 121 supports one side of the heating tube 11 and is used to connect with the first electrode of the power supply;
  • the second electrode foot plate 122 supports the above-mentioned heating tube.
  • the other side of the tube 11 is used to connect with the second electrode of the power supply;
  • the resistivity of the electrode foot plate 12 is smaller than the resistivity of the heating tube 11 .
  • the heating cylinder 11 is a cylindrical structure arranged around the crucible in the single crystal furnace, that is, the heating cylinder 11 has a receiving space for accommodating the crucible; and the electrode
  • the two ends of the first electrode foot plate 121 in the foot plate 12 are respectively connected to one side of the heating tube 11 and the first electrode of the power supply, and the two ends of the second electrode foot plate 122 in the electrode foot plate 12 are respectively connected to the other side of the heating tube 11 It is connected to the second electrode of the power supply, so the heating cylinder 11 can be connected to the power supply through the electrode foot plate 12 to generate heat, thereby heating the crucible placed inside the accommodation space of the heating cylinder 11 .
  • the heating cylinder 11 and the electrode foot plate 12 of the heater 10 are graded in resistivity, and a low-resistivity embryo body material is used to make the electrode foot plate 12, and a high-resistivity embryo body is used to make the heating tube 11.
  • a low-resistivity embryo body material is used to make the electrode foot plate 12
  • a high-resistivity embryo body is used to make the heating tube 11.
  • 11 height and increasing the thickness of the electrode foot plate 12 that is, the calorific value of the heating tube 11 can be effectively increased and the calorific value of the electrode foot plate 12 can be reduced, thereby reducing the oxygen content of the head of the produced ingot, and because there is no need to increase the thickness of the electrode foot plate 12 , so it is helpful to reduce costs and on-site transportation.
  • the oxygen in the crystal rod mainly comes from the oxygen generated by the reaction between the crucible and molten silicon under high temperature: SiO 2 +Si ⁇ SiO. It can be seen that the high temperature environment is an important factor affecting the oxygen content in the crystal rod.
  • the resistivity of the electrode foot plate 12 is smaller than the resistivity of the heating tube 11, so that the resistivity of the electrode foot plate 12 is The less heat generated can weaken the reaction between the crucible and the molten silicon, thereby reducing the oxygen content of the crystal rod.
  • the heater 10 provided in the embodiment of the present application may specifically be the main heater 10 in a single crystal furnace.
  • a high-resistivity embryo to make the heating tube 11
  • a low-resistivity embryo to make the electrode foot plate 12
  • the calorific value is 11, thereby effectively reducing the temperature of the R part of the crucible and below, thereby reducing the reaction rate between the molten silicon and the crucible, and reducing the oxygen content of the produced ingot.
  • the heater 10 provided by the embodiment of the present application does not need to shorten the height of the heater 10 or increase the thickness of the electrode foot plate 12 during processing, that is, it can ensure the height of the conventional heating tube 11 and the conventional electrode foot plate 12 Under the premise of the thickness and the total resistance value of the heater 10, the effect of reducing the oxygen content of the crystal rod is achieved.
  • the height of the heating tube 11 has not been reduced, the heat generated by the heating tube 11 will not be excessively concentrated, which will not affect the crystal pulling stability and the life of the heater 10; in addition, the height and thickness of the heater 10 can be adjusted according to the height of the heater 10.
  • Conventional heaters in existing single crystal furnaces remain the same, so that the heater 10 in the embodiment of the present application can not only achieve the effect of reducing the oxygen content of the crystal rod, but also ensure the same service life as a conventional heater.
  • the resistivity of the above-mentioned heating cylinder 11 is greater than 11 ⁇ m
  • the resistivity of the electrode foot plate 12 is less than or equal to 10 ⁇ m. That is, the heating tube 11 is made of a base material with a resistivity of 11 ⁇ m or greater, and the electrode foot plate 12 is made of a base material with a resistivity of 10 ⁇ m or less.
  • the resistivity of the heating cylinder 11 is greater than or equal to 12 ⁇ m, and the resistivity of the electrode foot plate 12 is less than or equal to 9 ⁇ m. That is, the heating tube 11 is made of a base material with a resistivity of 12 ⁇ m or greater, and the electrode foot plate 12 is made of a base material with a resistivity of 9 ⁇ m or less.
  • the heater 10 provided in the embodiment of the present application may be made of graphite and/or carbon-carbon composite materials, that is, the heater 10 is made of graphite and/or carbon-carbon composite materials.
  • the above-mentioned heating tube 11 can be made of graphite and the electrode foot plate 12 can be made of carbon-carbon composite material, or the above-mentioned heating tube 11 can be made of carbon-carbon composite material and the electrode foot plate 12 can be made of graphite material, or it can be
  • the above-mentioned heating cylinder 11 and electrode foot plate 12 are both made of carbon-carbon composite materials and/or graphite materials. It is only necessary to ensure that the resistivity of the heating cylinder 11 is greater than or equal to 12 ⁇ m, and that the resistivity of the electrode foot plate 12 is less than or equal to 9 ⁇ m. That’s it.
  • the heating cylinder 11 has a cylindrical structure and can be heated around the crucible.
  • the cross-sectional size of the heating cylinder 11 matches the crucible, that is, the size of its accommodation space can be adjusted according to the size of the crucible.
  • the first electrode foot plate 121 and the second electrode foot plate 122 do not need to be thickened, which is beneficial to saving costs and on-site transportation.
  • the first electrode foot plate 121 and the second electrode foot plate 122 have the same shape and size, that is, the height, cross-sectional thickness and cross-sectional width of the first electrode foot plate 121 and the second electrode foot plate 122 are the same.
  • the cross-sectional thickness of the first electrode foot plate 121 and the second electrode foot plate 122 is both 25-40 mm, and the cross-sectional width of the first electrode foot plate 121 and the second electrode foot plate 122 is both 70 mm. ⁇ 95mm, which can effectively ensure the overall installation strength of the heater 10; and the height of the first electrode foot plate 121 and the second electrode foot plate 122 can ensure that the above-mentioned heating tube 11 is lifted to the position opposite to the crucible in the single crystal furnace.
  • the thickness and width of each position in the radial direction of the heating cylinder 11 are the same, and the height of each position in the axial direction of the heating cylinder 11 is the same, so that the heat generation in each area of the heating cylinder 11 is more uniform and thus more reasonable.
  • the ground heats the crucible.
  • the thickness of the heating cylinder 11 in the radial direction is 15-30 mm; the height of the heating cylinder 11 in the axial direction is 150-400 mm.
  • the heating cylinder 11 of the heater 10 in the embodiment of the present application includes a plurality of splicing pieces 111, which are enclosed and connected to form the heating cylinder 11.
  • each splicing piece 111 is provided with a plurality of splicing pieces 111 that are enclosed and connected to form the heating cylinder 11 with the above-mentioned cylindrical structure, which facilitates actual processing and production and large-scale production.
  • adjacent splicing pieces 111 in each splicing piece 111 can be bonded as a whole through graphite glue, can also be connected and fixed through bolts, or can also be fixed through connecting plates.
  • each splicing piece 111 is an arc shape, then the above-mentioned splicing pieces 111 are enclosed and connected to form a cylindrical shape. , so that the heat generation in each area of the heating cylinder 11 is uniform and stable.
  • the first electrode foot plate 121 and the second electrode foot plate 122 are respectively fixedly connected to two relatively distributed splicing pieces to further ensure structural stability and heating uniformity.
  • the first electrode foot plate 121 is fixed on the first splicing piece through graphite glue and/or bolts
  • the second electrode foot plate 122 is fixed on the second splicing piece through graphite glue and/or bolts, wherein, The first splicing piece and the second splicing piece are the two oppositely distributed splicing pieces 111 mentioned above.
  • the upper portion of each splicing piece 111 is thinned.
  • the resistance of each splicing part 111 is increased, and the calorific value of the heating tube is further increased.
  • the thickness of the upper thinned area of the splicing piece 111 is not less than 12 mm.
  • each splicing piece 111 is gradually thinned from the lower end to the upper end, so that when the splicing piece 111 is energized to generate heat, its surface temperature increases evenly from bottom to top, which avoids local overheating.
  • the life of the crucible is shortened, and the crucible is heated more reasonably; the minimum thickness of each spliced piece is not less than 12mm.
  • the plurality of splicing pieces 111 include a plurality of U-shaped heating flaps 112 , and the U-shaped heating flaps 112 are formed from a portion between two adjacent first slots 113 on the splicing piece 111 constitute, and a second slot 114 is also provided in the middle position of two adjacent first slots 113, so that the above-mentioned splicing piece 111 has a continuously curved serpentine structure; wherein, the first slot 113 is a self-heating cylinder 11
  • the second slot 114 is a groove extending from the other end of the heating tube 11 to one end of the heating tube 11 .
  • the width of each of the above grooves is the same, and the width of each groove is 10 mm to 50 mm.
  • the number of the plurality of U-shaped heating flaps 112 is 28 to 48, that is, the heating cylinder 11 is formed by splicing and enclosing 28 to 48 U-shaped heating flaps 112 .
  • the central angles corresponding to each splicing piece 111 are the same or different.
  • the number of the splicing pieces 111 can be 2, 3, 4, 5, 6, etc., only It is necessary to ensure that the sum of the central angles of each splicing piece 111 is 360°, so that they can be connected to form a cylindrical heating cylinder 11.
  • the central angle of the above-mentioned arc shape is 60-180°, which facilitates the processing and production of each splicing piece 111.
  • the number of the above-mentioned splicing pieces 111 is four, and the corresponding central angle of each of the above-mentioned splicing pieces 111 is 90°.
  • the embodiment of the present application also provides another heater 10 for a single crystal furnace.
  • the heating cylinder 11 and the electrode foot plate 12 are provided;
  • the heating cylinder 11 is a cylindrical structure arranged around the crucible in the single crystal furnace;
  • the electrode foot plate 12 includes a first electrode foot plate 121 and a second electrode foot plate 122;
  • the first electrode foot plate 121 supports one side of the heating tube 11 and is used to connect with the first electrode of the power supply;
  • the second electrode foot plate 122 supports the heating tube 11 The other side is used to connect to the second electrode of the power supply;
  • the resistance ratio between the heating tube 11 and the electrode foot plate 12 is 0.85 ⁇ 1:0 ⁇ 0.15.
  • the resistance ratio between the above-mentioned heating tube 11 and the electrode foot plate 12 is set to 0.85 ⁇ 1:0 ⁇ 0.15, that is, the percentage of the resistance of the heating tube 11 to the total resistance of the heater 10 is set to be greater than or equal to 85% and less than 100 %, and the percentage of the resistance of the electrode foot plate 12 to the total resistance of the heater 10 is less than or equal to 15%, so that the heat generated by the electrode foot plate 12 is much lower than the heat generated by the heating cylinder 11, so there is no need to shorten the height of the heater 10 or add electrodes.
  • the thickness of the foot plate 12 can achieve the effect of reducing the oxygen content of the ingot while ensuring the conventional height of the heating tube 11 , the conventional thickness of the electrode foot plate 12 and the total resistance value of
  • the absolute value of the resistance value of the heating cylinder 11 is 25 ⁇ 60m ⁇ , while the absolute value of the resistance value of the electrode foot plate 12 is 0 ⁇ 1m ⁇ , that is, the resistance value of the electrode foot plate 12 is continuously reduced to close to 0, which can ensure that the heater 10 can generate heat according to the crucible heating demand. down, the heat generated by the electrode foot plate 12 is reduced, and the temperature of the crucible R part and below is more effectively reduced.
  • the resistivity of the electrode foot plate 12 is smaller than the resistivity of the heating cylinder 11 .
  • the heating cylinder 11 and the electrode foot plate 12 of the heater 10 are graded in resistivity, and a low resistivity embryo body material is selected to make the electrode foot plate 12 with an absolute resistance value of 0 to 1 m ⁇ .
  • the high resistivity embryo body By making the heating tube 11 with an absolute resistance value of 25 to 60 m ⁇ , there is no need to reduce the height of the heating tube 11 and increase the thickness of the electrode foot plate 12, which can effectively increase the calorific value of the heating tube 11 and reduce the calorific value of the electrode foot plate 12, thus reducing the The oxygen content of the head of the produced ingot is reduced, and since there is no need to increase the thickness of the electrode foot plate 12, it is beneficial to reduce costs and on-site transportation.
  • the heater 10 provided in the embodiment of the present application is based on the generation principle of oxygen in the crystal rod, and by optimizing the structure of the heater 10 for a single crystal furnace, the electrode foot plate 12 is made of a low-resistivity embryo material and a high-resistance
  • the high-efficiency embryonic body is used to make the heating tube 11. There is no need to reduce the height of the heating tube 11 and increase the thickness of the electrode foot plate 12, which can effectively increase the calorific value of the heating tube 11 and reduce the calorific value of the electrode foot plate 12, thereby reducing the head of the produced crystal ingot. oxygen content.
  • a single crystal furnace including the existing heater A and a single crystal furnace including the heater B provided in the embodiment of the present application were respectively used to carry out 8 charging and pulling crystals.
  • a total of RCZ1 to RCZ8 were continuously grown using the same crystal pulling process.
  • the average oxygen value of the crystal ingot head grown using the existing heater A is 14.9 ppma
  • the average oxygen value of the crystal ingot head grown using the heater B provided in the embodiment of the present application is 13.3 ppma, reducing oxygen.
  • the effect is remarkable, and the crystal pulling is stable, and no other abnormalities or fluctuations occur during use.
  • this application also proposes a single crystal furnace, which includes a furnace body and the above-mentioned single crystal furnace heater 10 installed inside the furnace body.
  • the above-mentioned single crystal furnace embodiment includes the above-mentioned single crystal furnace heater 10 and can achieve the same technical effect. To avoid repetition, it will not be described in detail here. For relevant details, please refer to the implementation of the single crystal furnace heater 10 A partial explanation of the example will suffice.
  • the single crystal furnace heater 10 in this application includes a heating cylinder 11 And the electrode foot plate 12;
  • the heating tube 11 is a cylindrical structure arranged around the crucible in the single crystal furnace;
  • the electrode foot plate 12 includes a first electrode foot plate 121 and a second electrode foot plate 122;
  • the first electrode foot plate 121 supports one side of the heating tube 11 , and is used to connect to the first electrode of the power supply;
  • the second electrode foot plate 122 supports the other side of the heating tube 11 and is used to connect to the second electrode of the power supply;
  • the resistivity of the electrode foot plate 12 is smaller than the resistivity of the heating tube 11;
  • the heating cylinder 11 and the electrode foot plate 12 of the heater 10 are graded in resistivity, and a low-resistivity embryo body material is used to make the electrode foot plate 12, and a high-resistivity embryo body is used to make the heating tube 11.
  • the calorific value of the heating tube 11 can be effectively increased and the calorific value of the electrode foot plate 12 can be reduced, thereby reducing the oxygen content of the head of the produced ingot, and because there is no need to increase the thickness of the electrode foot plate 12 , which is helpful to reduce the cost of the baseboard and also facilitates on-site transportation.
  • a heater 10 is provided. As shown in FIGS. 3 to 5 , the heater may include a heating cylinder 11 and an electrode foot plate 12 .
  • the heating cylinder 11 is used to cover a single crystal furnace.
  • the outside of the crucible (not shown) to heat the crucible, the heating cylinder 11 may include an opposite first end surface 21 and a second end surface 22, the first end surface 21 is at the upper end of the heating cylinder 11, and the second end surface 22 is at the upper end of the heating cylinder 11.
  • the heating tube 11 also includes a first slot 113 extending from the first end face 21 to the second end face 22, and a second slot 114 extending from the second end face 22 to the first end face 21.
  • the first slot 114 extends from the second end face 22 to the first end face 21.
  • the grooves 113 and the second slots 114 are alternately arranged along the circumference of the heating cylinder 11 so that the path of the current after the heater is energized increases on the heater to increase the resistance, thereby enabling the heater to provide more heat.
  • the distance between the end of the second slot 114 and the first end face 21 is smaller than the distance between the end of the first slot 113 and the second end face 22, so that the high temperature area of the heating tube 11 is close to the upper end of the heating tube 11,
  • the heater may include two electrode foot plates 12.
  • the two electrode foot plates 12 may be arranged oppositely.
  • the upper end of the electrode foot plate 12 may be connected to the lower end of the heating cylinder 11.
  • the lower ends of the two electrode foot plates 12 may be connected to the positive and negative electrodes of the single crystal furnace respectively. Electrical connection.
  • the heater provided by the present application, by making the distance between the end of the second slot 114 and the first end face 21 smaller than the distance between the end of the first slot 113 and the second end face 22 , to adjust the position of the high-temperature zone of the heating cylinder 11, so that while ensuring that the total resistance and heat generation of the heating cylinder 11 remain unchanged, the position of the high-temperature zone moves upward as a whole and away from the bottom of the crucible, thereby reducing baking of the bottom of the crucible. Reduce the temperature at the bottom of the crucible to ensure the stability and production efficiency of crystal pulling while reducing the oxygen content at the head of the crystal rod.
  • the length of the first slot 113 may not be less than 81% of the length of the heating barrel 11, and the length of the second slot 114 may not be greater than 89% of the length of the heating barrel 11 to ensure that the The first slot 113 and the second slot 114 have sufficient length to ensure that the current path on the heating tube 11 is long enough and the resistance of the heating tube 11 is large enough.
  • the distance between the end of the first slot 113 and the second end face 22 may not be less than 50 mm, and the distance between the end of the second slot 114 and the first end face 21 may not be greater than 45 mm. , so that the high temperature zone is close to the upper end of the heating cylinder 11.
  • the ends of the first slot 113 and the second slot 114 may be formed with rounded corners with a radius of 5 mm.
  • the width of the first slot 113 and the width of the second slot 114 may be 10 mm to 40 mm to avoid the first slot 113 and the second slot 114 being too narrow and causing the heater to Sparks and other safety accidents may occur during use, thereby increasing the service life of the heater.
  • the thickness of the electrode foot plate 12 can be 32mm to 40mm, and the width can be 150mm to 175mm. Compared with the conventional electrode foot plate, the thickness of the electrode foot plate 12 is increased by 3mm to 8mm, and the width is increased by 5mm to 10mm.
  • the thermal resistance of the electrode foot plate 12 is smaller than the thermal resistance of the conventional electrode foot plate, thereby reducing the heat generated by the electrode foot plate 12 after energization, weakening the baking of the bottom of the crucible, and reducing the temperature of the bottom of the crucible, which can reduce the temperature of single crystal silicon. Oxygen content in the head of the rod.
  • the heating cylinder 11 can include multiple splicing pieces 111 , that is, the heating cylinder 11 can be spliced by multiple splicing pieces 111 .
  • Two adjacent splicing pieces 111 can be connected through connecting plates 102, so that multiple splicing pieces 111 are enclosed into a cylindrical structure.
  • the connecting plate 102 can be tightly connected to the splicing piece 111 through fasteners, and the fasteners can be M10 carbon bolts.
  • each splicing piece 111 can have the same shape, and the resistivity of each splicing piece 111 and the connecting plate 102 is consistent.
  • each splicing piece 111 and the connecting plate 102 can be made of hydrostatic graphite, and each splicing piece 111 and the connecting plate 102 can be made from the same embryonic body to ensure that the resistivity of each splicing piece 111 and the connecting plate 102 is consistent.
  • the heating cylinder 11 may be configured to be integrally formed.
  • the heating cylinder 11 can be made of graphite material or carbon material. Since graphite has the characteristics of good thermal conductivity, the heating cylinder 11 can form a closed circuit. When the power is turned on, the heating cylinder 11 can form a closed circuit. Generate heat energy.
  • this application also provides a single crystal furnace, including a crucible (not shown) and the heater in the above technical solution, wherein the length of the heating tube 11 can be 0.35-0.5 of the height of the crucible. times.
  • the single crystal furnace provided by this application has the same technical effect as the heater in the above technical solution. In order to avoid unnecessary repetition, it will not be described in detail here.
  • the length of the heating tube 11 of the heater is 0.35 to 0.5 times the total height of the crucible. Therefore, compared with the conventional heating cylinder, the length of the heating cylinder 11 provided in this application is only shortened by 10 mm to 15 mm, which can not only avoid the impact on the crystal pulling, but also further improve the heating The high temperature area of the barrel 11 is far away from the bottom of the crucible, thereby reducing the oxygen content at the head of the crystal rod.
  • the background data represents the data of the traditional single crystal furnace.
  • Background data The average oxygen value of the entire furnace is 16 ppma.
  • the test data represents the data of the single crystal furnace provided in this application.
  • the average oxygen value of the entire furnace is 14.3 ppma, which is 1.7 ppma lower than the background data. The oxygen reduction effect is significant.

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Abstract

本申请提供了一种单晶炉用加热器及单晶炉，其中，单晶炉用加热器包括发热筒及电极脚板；所述发热筒为环绕单晶炉中坩埚设置的筒状结构；所述电极脚板包括第一电极脚板及第二电极脚板；所述第一电极脚板支撑所述发热筒的一侧，并用于与电源的第一电极连接；所述第二电极脚板支撑所述发热筒的另一侧，并用于与电源的第二电极连接；所述电极脚板的电阻率小于所述发热筒的电阻率。本申请实施例提供的加热器，可以有效提高发热筒的发热量而降低电极脚板的发热量，从而降低所生产晶棒的头部氧含量，且有利于节约缩减成本及现场搬运。

Description

一种单晶炉用加热器及单晶炉
本申请要求在2022年09月27日提交中国专利局、申请号为202222570281.7、名称为“一种单晶炉用加热器及单晶炉”的中国专利申请的优先权，在2022年07月25日提交中国专利局、申请号为202221949180.4、名称为“加热器和单晶炉”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及晶体硅制造设备技术领域，特别是涉及一种单晶炉用加热器及单晶炉。
背景技术
当前，为了满足太阳能光伏产业对单晶硅棒强烈的产能需求，热场和单晶硅晶棒尺寸不断增大，使得硅晶棒的氧含量不断升高。而晶棒氧含量的升高不仅会导致电池端产生“同心圆”现象，降低电池的效率和寿命，也会提高单晶端的拉晶成本。
针对晶棒头部氧含量过高的问题，现有技术一般采用降低拉晶埚转以及使用降氧加热器，以降低晶棒头部氧含量。
但是，降低埚转会造成拉晶过程中温度波动性增加及断线率提高；而降氧加热器则需要大幅度缩短加热器发热区的高度，导致发热量过度集中，造成加热器的寿命较短、拉晶成本增加。
申请内容
本申请的目的在于提供一种单晶炉用加热器及单晶炉，用以解决现有单晶生长过程所使用的加热器，无法有效兼顾晶棒品质与生产成本的问题。
为了解决上述问题，本申请是通过如下技术方案实现的：
本申请提出了一种单晶炉用加热器，其中，包括发热筒及电极脚板；
所述发热筒为环绕单晶炉中坩埚设置的筒状结构；
所述电极脚板包括第一电极脚板及第二电极脚板；
所述第一电极脚板支撑所述发热筒一侧，并用于与电源的第一电极连接；
所述第二电极脚板支撑所述发热筒的另一侧，并用于与电源的第二电极连接；
所述电极脚板的电阻率小于所述发热筒的电阻率。
可选地，所述的单晶炉用加热器中，所述发热筒的电阻率大于等于11μΩ·m，所述电极脚板的电阻率小于等于10μΩ·m。
可选地，所述的单晶炉用加热器中，所述发热筒的电阻率大于等于12μΩ·m，所述电极脚板的电阻率小于等于9μΩ·m。
可选地，所述的单晶炉用加热器中，所述发热筒的径向方向上的厚度为15～30mm；所述发热筒的轴向方向上的高度为150～400mm；
所述第一电极脚板及所述第二电极脚板的横截面厚度均为25～40mm，所述第一电极脚板及所述第二电极脚板的横截面宽度均为70～95mm。
可选地，所述的单晶炉用加热器中，所述发热筒包括多个拼接件，由多个所述拼接件围合连接形成所述发热筒。
可选地，所述的单晶炉用加热器中，沿所述发热筒的轴线方向，各所述拼接件的投影均呈圆弧形。
可选地，所述的单晶炉用加热器中，所述圆弧形的圆心角为60～180°。
可选地，所述的单晶炉用加热器中，各所述拼接件的圆心角相同。
可选地，所述的单晶炉用加热器中，各所述拼接件的上部减薄，所述拼接件上部减薄区的厚度不小于12mm。
可选地，所述的单晶炉用加热器中，各所述拼接件的下端至上端逐渐减薄，所述拼接件的最薄厚度不小于12mm。
可选地，所述的单晶炉用加热器中，所述第一电极脚板与所述第二电极脚板分别固定连接于两相对分布的所述拼接件上。
本申请提出了另一种单晶炉用加热器，其中，包括发热筒及电极脚板；
所述发热筒为环绕单晶炉中坩埚设置的筒状结构；
所述电极脚板包括第一电极脚板及第二电极脚板；
所述第一电极脚板支撑所述发热筒一侧，并用于与电源的第一电极连接；
所述第二电极脚板支撑所述发热筒的另一侧，并用于与电源的第二电极 连接；
所述发热筒与所述电极脚板之间的电阻比值为0.85～1：0～0.15。
可选地，所述的单晶炉用加热器中，所述发热筒的电阻值的绝对值为25～60mΩ，所述电极脚板的电阻值的绝对值为0～1mΩ。
本申请还提出了一种单晶炉，其中，包括炉体及安装于所述炉体内部的如上所述的单晶炉用加热器。
与现有技术相比，本申请包括以下优点：
本申请中的单晶炉用加热器包括发热筒及电极脚板；发热筒为环绕单晶炉中坩埚设置的筒状结构；电极脚板包括第一电极脚板及第二电极脚板；第一电极脚板支撑上述发热筒的一侧，并用于与电源的第一电极连接；第二电极脚板支撑上述发热筒的另一侧，并用于与电源的第二电极连接；电极脚板的电阻率小于发热筒的电阻率；其中，将加热器的发热筒和电极脚板进行电阻率分档，选用低电阻率的胚体料做成电极脚板，高电阻率的胚体做成发热筒，无需缩减发热筒高度和增加电极脚板厚度，即可以有效提高发热筒的发热量而降低电极脚板的发热量，从而降低所生产晶棒的头部氧含量，且有利于节约缩减成本及现场搬运。
本申请提供一种加热器，包括：发热筒，用于罩设在单晶炉的坩埚的外侧，以对所述坩埚进行加热，所述发热筒包括相对的第一端面和第二端面，所述发热筒还包括由所述第一端面向所述第二端面延伸的第一狭槽，以及由所述第二端面向所述第一端面延伸的第二狭槽，所述第一狭槽和所述第二狭槽沿所述发热筒的周向交替排布，所述第二狭槽的末端与所述第一端面之间的距离小于所述第一狭槽的末端与所述第二端面之间的距离，以及电极脚板，用于与所述单晶炉的电极连接，所述电极脚板连接在所述发热筒靠近所述第二端面的一端。
可选地，所述第一狭槽的长度不小于所述发热筒的长度的81％，所述第二狭槽的长度不大于所述发热筒的长度的89％。
可选地，所述第一狭槽的末端与所述第二端面之间的距离不小于50mm，所述第二狭槽的末端与所述第一端面之间的距离不大于45mm。
可选地，所述第一狭槽的宽度和所述第二狭槽的宽度为10mm至40mm。
可选地，所述电极脚板的厚度为32mm至40mm，宽度为150mm至175mm。
可选地，所述发热筒包括多个拼接件，相邻的两个所述拼接件之间通过连接板连接，以使得多个拼接件围合成筒状结构。
可选地，各个所述拼接件和所述连接板的电阻率一致。
可选地，所述发热筒构造为一体成型。
可选地，所述发热筒采用石墨材质或碳碳材质制成。
在上述技术方案的基础上，本申请还提供一种单晶炉，包括坩埚和上述技术方案中的加热器，其中，所述发热筒的长度为所述坩埚的高度的0.35倍至0.5倍。
通过上述技术方案，在本申请所提供的加热器中，通过使第二狭槽的末端与第一端面之间的距离小于第一狭槽的末端与第二端面之间的距离，来调整发热筒的高温区的位置，从而在保证发热筒的总电阻和发热量不变的同时，使得高温区的位置整体上移而远离坩埚底部，减少对坩埚底部的烘烤，降低坩埚底部的温度，从而在确保拉晶稳定性和产出效率的同时降低晶棒头部的含氧量。本申请提供的单晶炉具有与上述技术方案中的加热器相同的技术效果，为了避免不必要的重复，在此不作赘述，此外，由于加热器的发热筒的长度为坩埚总高的0.35-0.5倍，因此，本申请所提供的发热筒的长度小于常规发热筒的长度，能够使得发热筒的高温区远离坩埚底部，而降低晶棒头部的含氧量。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性和解释性的，并不能限制本申请。
附图说明
此处所说明的附图用来提供对本申请的进一步理解，构成本申请的一部分，本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。在附图中：
图1是本申请实施例所提供的单晶炉用加热器结构示意图；
图2是本申请实施例所提供的加热器与现有技术加热器所生长晶棒的 氧含量对比图；
图3是本申请具体实施方式中的加热器的结构示意图；
图4是本申请具体实施方式中的发热筒的结构示意图；
图5是本申请具体实施方式中的支撑腿的结构示意图。
具体实施例
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
应理解，说明书通篇中提到的“一个实施例”或“一实施例”意味着与实施例有关的特定特征、结构或特性包括在本申请的至少一个实施例中。因此，在整个说明书各处出现的“在一个实施例中”或“在一实施例中”未必一定指相同的实施例。此外，这些特定的特征、结构或特性可以任意适合的方式结合在一个或多个实施例中。
单晶炉用加热器主要是通过电阻通电发热的方式产生热量，并利用坩埚传导实现对坩埚内的硅料加热，进而生成用于生长单晶硅的硅液。现有加热器的发热筒和电极脚板的电阻率相同，为了降低电极脚板的电阻，则需要降低脚板的高度、加厚电极脚板的厚度，容易导致加热器过低，而加热器的高度过低导致拉晶稳定性变差、断线率提高，且容易因发热量过度集中导致加热器的寿命缩短，增大了热场成本。
针对上述问题，本申请实施例提供的一种单晶炉用加热器10，如图1所示，发热筒11及电极脚板12；该发热筒11为环绕单晶炉中坩埚设置的筒状结构；该电极脚板12包括第一电极脚板121及第二电极脚板122；第一电极脚板121支撑上述发热筒11的一侧，并用于与电源的第一电极连接；第二电极脚板122支撑上述发热筒11的另一侧，并用于与电源的第二电极连接；电极脚板12的电阻率小于发热筒11的电阻率。
本申请所提供的单晶炉用加热器10中，发热筒11为环绕单晶炉中坩埚设置的筒状结构，也即该发热筒11具有用于收容坩埚的容纳空间；而电极 脚板12中的第一电极脚板121的两端分别与发热筒11的一侧及电源的第一电极连接，电极脚板12中的第二电极脚板122的两端分别与发热筒11的另一侧及电源的第二电极连接，因而发热筒11可以经由电极脚板12与电源导通发热，实现对发热筒11的容纳空间内内部放置的坩埚加热。
其中，将加热器10的发热筒11和电极脚板12进行电阻率分档，选用低电阻率的胚体料做成电极脚板12，高电阻率的胚体做成发热筒11，无需缩减发热筒11高度和增加电极脚板12厚度，即可以有效提高发热筒11的发热量而降低电极脚板12的发热量，从而降低所生产晶棒的头部氧含量，且因为无需额外增加电极脚板12的厚度，所以有利于缩减成本及现场搬运。
晶棒中的氧主要来自高温作用下坩埚与熔硅反应生成的氧：SiO2+Si→SiO，可以看出，高温环境是影响晶棒中氧含量的重要因素。相较于现有技术中加热器的发热筒11和电极脚板12的电阻率相同的设计，本申请实施例中，电极脚板12的电阻率小于发热筒11的电阻率，使得电极脚板12处的发热量较少，可以减弱坩埚与熔硅的反应，从而降低晶棒的氧含量。
本申请实施例所提供的加热器10具体可以为单晶炉中的主加热器10。通过使用大电阻率的胚体制作上述发热筒11，使用低电阻率的胚体制作上述电极脚板12，可以在保持总电阻值不变的情况下，减少电极脚板12的发热量而提高发热筒11的发热量，从而有效降低坩埚R部及以下的温度，从而减少熔硅与坩埚的反应速率，降低所生产晶棒氧含量。
本申请实施例所提供的加热器10，在加工制作时，无需缩短加热器10的高度，也无需增大电极脚板12的厚度，即可以在保证常规的发热筒11高度、常规的电极脚板12厚度和加热器10总电阻值的前提下，实现降低晶棒氧含量的效果。
其中，因发热筒11高度未缩减，因而发热筒11的发热量不会过度集中，不会对拉晶稳定性及加热器10的寿命产生影响；另外，因加热器10的高度、薄厚可以与现有单晶炉中常规加热器保持一致，使得本申请实施例中加热器10不仅能实现降低晶棒氧含量的效果，还能保证与常规加热器同样的使用寿命。
可选地，作为本申请实施例之一，上述发热筒11的电阻率大于11μΩ·m， 电极脚板12的电阻率小于等于10μΩ·m。也即使用电阻率大于等于11μΩ·m的胚体材料制作上述发热筒11，而利用电阻率小于等于10μΩ·m的胚体材料制作上述电极脚板12。
优选地，作为本申请实施例之一，上述发热筒11的电阻率大于等于12μΩ·m，电极脚板12的电阻率小于等于9μΩ·m。也即使用电阻率大于等于12μΩ·m的胚体材料制作上述发热筒11，而利用电阻率小于等于9μΩ·m的胚体材料制作上述电极脚板12。
在实际应用中，本申请实施例所提供的加热器10，其材料可以为石墨和/或碳碳复合材料，也即由石墨和/或碳碳复合材料制作上述加热器10。其中，可以是上述发热筒11由石墨制成而电极脚板12由碳碳复合材料制成，也可以是上述发热筒11由碳碳复合材料制成而电极脚板12由石墨材料制成，也可以是上述发热筒11及电极脚板12均由碳碳复合材料和/或石墨材料制成，仅需保证发热筒11的电阻率大于等于12μΩ·m，而电极脚板12的电阻率小于等于9μΩ·m即可。
本申请实施例所提供的加热器10中，发热筒11呈筒状结构，可以环绕坩埚加热，发热筒11的横截面尺寸与坩埚相匹配，也即其容纳空间大小可以根据坩埚大小进行调整。
本申请实施例中，第一电极脚板121及第二电极脚板122均无需加厚处理，有利于节约缩减成本及现场搬运。其中，第一电极脚板121与第二电极脚板122的形状及尺寸相同，也即第一电极脚板121与第二电极脚板122的高度、横截面厚度及横截面宽度均相同。
可选地，在一种实施方式中，第一电极脚板121及第二电极脚板122的横截面厚度均为25～40mm，第一电极脚板121及第二电极脚板122的横截面宽度均为70～95mm，可以有效保证加热器10整体的安装强度；而第一电极脚板121及第二电极脚板122的高度则可以确保将上述发热筒11抬升至与单晶炉中坩埚的位置相对。
本申请实施例中，发热筒11的径向方向上各位置的厚宽度相同，发热筒11的轴向方向上各位置的高度相同，使得发热筒11各区域产热更为均匀，从而更合理地对坩埚加热。
可选地，在一种实施方式中，发热筒11的径向方向上的厚度为15～30mm；所述发热筒11的轴向方向上的高度为150～400mm。
可选地，本申请实施例中加热器10的上述发热筒11包括多个拼接件111，由多个上述拼接件111围合连接形成上述发热筒11。其中，各拼接件111设置由多个拼接件111围合连接形成上述呈筒状结构的发热筒11，便于实际加工制作及规模化生成。在实际应用中，各拼接件111中相邻拼接件111之间可以通过石墨胶粘接为整体，也可以通过螺栓连接固定，还可以通过连接板固定。
可选地，在一种实施方式中，沿发热筒11的轴线方向，各拼接件111的投影均呈圆弧形，则由上述各拼接件111围合连接形成上述发热筒11为圆筒状，使得发热筒11各区域产热均一、稳定。
可选地，在一种具体实施方式中，第一电极脚板121与第二电极脚板122分别固定连接于两相对分布的拼接件上，进一步保证结构稳定性及发热均匀性。在实际应用中，第一电极脚板121通过石墨胶粘和/或螺栓固定在第一拼接件上，而第二电极脚板122通过石墨胶粘和/或螺栓固定在第二拼接件上，其中，第一拼接件及第二拼接件为上述两相对分布的拼接件111。
可选地，在一种实施方式中，各拼接件111的上部减薄。该实施方式中，通过对拼接件111上段进行减薄处理，增大各拼接件111的电阻，进一步提升发热筒的发热量。其中，因边缘过薄会影响拼接件的结构强度，使得拼接件111的端部容易在搬运、使用过程中被磕坏，因而设置拼接件111上部减薄区的厚度不小于12mm。
可选地，在一种具体实施方式中，各拼接件111的下端至上端逐渐减薄，使得拼接件111在通电产生热量时，其表面温度自下而上均匀增加，既避免局部过热导致加热器的寿命缩短，也实现对坩埚更为合理地加热；各拼接件的最薄厚度不小于12mm。
可选地，在一种实施方式中，上述多个拼接件111共包括多个U型发热瓣112，U型发热瓣112由拼接件111上相邻两个第一狭槽113之间的部分构成，且在相邻两个第一狭槽113的中间位置还设置第二狭槽114，使得上述拼接件111呈连续弯曲的蛇形结构；其中，第一狭槽113为自发热筒11 的一端向另一端延伸的沟槽，第二狭槽114为自发热筒11的另一端向发热筒11的一端延伸的沟槽。其中，上述各沟槽的宽度相同，各沟槽的宽度为10mm～50mm。
可选地，在一种具体实施方式中，上述多个U型发热瓣112的瓣数为28～48瓣，也即上述发热筒11由28～48个U型发热瓣112拼接围合而成。
本申请实施例所提供的加热器10中，各拼接件111对应的圆心角相同或不同，上述拼接件111的个数可以为2个、3个、4个、5个、6个等，仅需保证各拼接件111的圆心角之和为360°，即可合为连接形成圆筒状的发热筒11。
可选地，上述圆弧形的圆心角为60～180°，便于各拼接件111的加工生产。
可选地，在一种具体实施方式中，上述拼接件111为4个，则上述各拼接件111对应的圆心角为90°。
本申请实施例还提供了另一种单晶炉用加热器10，如图1所示，发热筒11及电极脚板12；该发热筒11为环绕单晶炉中坩埚设置的筒状结构；该电极脚板12包括第一电极脚板121及第二电极脚板122；第一电极脚板121支撑上述发热筒11的一侧，并用于与电源的第一电极连接；第二电极脚板122支撑上述发热筒11的另一侧，并用于与电源的第二电极连接；发热筒11与电极脚板12之间的电阻比值为0.85～1：0～0.15。
其中，因为在加热器10总电阻不变的情况下，发热筒11电阻率越大且电极脚板12电阻率越低，则越有利于拉晶生产及实现降氧效果。本申请实施例通过设置上述发热筒11与电极脚板12之间的电阻比值为0.85～1：0～0.15，也即设置发热筒11电阻占加热器10总电阻的百分数大于等于85％且小于100％，而设置电极脚板12电阻占加热器10总电阻的百分数小于等于15％，使得电极脚板12发热量远低于发热筒11的发热量，因而无需缩短加热器10的高度，也无需增加电极脚板12的厚度，即可以在保证常规的发热筒11高度、常规的电极脚板12厚度和加热器10总电阻值的前提下，实现降低晶棒氧含量的效果。
可选地，在一种实施方法中，上述发热筒11的电阻值的绝对值为 25～60mΩ，而电极脚板12的电阻值的绝对值为0～1mΩ，即控制电极脚板12的阻值不断减小至接近于0，能够在保证加热器10能够按坩埚加热需求产热的前提下，缩减电极脚板12的产热量，更为有效地降低坩埚R部及以下的温度。
可选地，在一种实施方法中，电极脚板12的电阻率小于发热筒11的电阻率。其中，将加热器10的发热筒11和电极脚板12进行电阻率分档，选用低电阻率的胚体料做成电阻值的绝对值为0～1mΩ的电极脚板12，高电阻率的胚体做成电阻值的绝对值为25～60mΩ的发热筒11，无需缩减发热筒11高度和增加电极脚板12厚度，即可以有效提高发热筒11的发热量而降低电极脚板12的发热量，从而降低所生产晶棒的头部氧含量，且因为无需额外增加电极脚板12的厚度，所以有利于缩减成本及现场搬运。
本申请实施例所提供的加热器10，从晶棒中的氧的生成原理出发，通过优化单晶炉用加热器10的结构，使用低电阻率的胚体料制作电极脚板12，使用高电阻率的胚体制作发热筒11，无需缩减发热筒11高度和增加电极脚板12厚度，即可以有效提高发热筒11的发热量而降低电极脚板12的发热量，从而降低所生产晶棒的头部氧含量。
分别采用包括现有加热器A的单晶炉和包括本申请实施例所提供的加热器B的单晶炉进行8次装料拉晶，采用同样的拉晶工艺分别连续生长了RCZ1～RCZ8共8根晶棒，各晶棒头氧值如图2所示。
由图2可知，采用现有加热器A所生长的晶棒头氧均值为14.9ppma，而采用了本申请实施例所提供的加热器B所生长的晶棒头氧均值为13.3ppma，降氧效果显著，且拉晶的稳定性，在使用过程中未出现其他异常和波动现象。
另外，本申请还提出了一种单晶炉，其中，包括炉体及安装于所述炉体内部的如上述的单晶炉用加热器10。
对于上述单晶炉实施例而言，其包括上述单晶炉用加热器10，且能达到相同的技术效果，为避免重复，这里不再赘述，相关之处参见单晶炉用加热器10实施例的部分说明即可。
综上，在本实施例中，本申请中的单晶炉用加热器10包括发热筒11 及电极脚板12；发热筒11为环绕单晶炉中坩埚设置的筒状结构；电极脚板12包括第一电极脚板121及第二电极脚板122；第一电极脚板121支撑上述发热筒11的一侧，并用于与电源的第一电极连接；第二电极脚板122支撑上述发热筒11的另一侧，并用于与电源的第二电极连接；电极脚板12的电阻率小于发热筒11的电阻率；其中，将加热器10的发热筒11和电极脚板12进行电阻率分档，选用低电阻率的胚体料做成电极脚板12，高电阻率的胚体做成发热筒11，无需缩减发热筒11高度和增加电极脚板12厚度，即可以有效提高发热筒11的发热量而降低电极脚板12的发热量，从而降低所生产晶棒的头部氧含量，且因为无需额外增加电极脚板12的厚度，有利于缩减脚板的成本，也有利于现场搬运。
根据本申请的具体实施方式，提供一种加热器10，参考图3至图5所示，该加热器可以包括发热筒11和电极脚板12，其中，发热筒11用于罩设在单晶炉的坩埚(未示出)的外侧，以对坩埚进行加热，发热筒11可以包括相对的第一端面21和第二端面22，第一端面21在发热筒11的上端，第二端面22在发热筒11的下端，发热筒11还包括由第一端面21向第二端面22延伸的第一狭槽113，以及由第二端面22向第一端面21延伸的第二狭槽114，第一狭槽113和第二狭槽114沿发热筒11的周向交替排布，以使得加热器通电后的电流在加热器上的路径增长，以增大电阻，从而使得加热器能够提供更多的热量，第二狭槽114的末端与第一端面21之间的距离小于第一狭槽113的末端与第二端面22之间的距离，以使得发热筒11的高温区靠近发热筒11的上端，加热器可以包括两个电极脚板12，两个电极脚板12可以相对设置，电极脚板12的上端可以连接在发热筒11的下端，两个电极脚板12的下端分别可以与单晶炉的正极和负极电连接。
通过上述技术方案，在本申请所提供的加热器中，通过使第二狭槽114的末端与第一端面21之间的距离小于第一狭槽113的末端与第二端面22之间的距离，来调整发热筒11的高温区的位置，从而在保证发热筒11的总电阻和发热量不变的同时，使得高温区的位置整体上移而远离坩埚底部，减少对坩埚底部的烘烤，降低坩埚底部的温度，从而在确保拉晶稳定性和产出效率的同时降低晶棒头部的含氧量。
在本申请的具体实施方式中，第一狭槽113的长度可以不小于发热筒11的长度的81％，第二狭槽114的长度可以不大于发热筒11的长度的89％，以确保第一狭槽113和第二狭槽114具有足够的长度，从而确保电流在发热筒11上的路径足够长，发热筒11的电阻足够大。
在本申请的具体实施方式中，第一狭槽113的末端与第二端面22之间的距离可以不小于50mm，第二狭槽114的末端与第一端面21之间的距离可以不大于45mm，以使得高温区靠近发热筒11的上端。此外，第一狭槽113和第二狭槽114的末端均可以形成有半径为5mm的圆角。
在本申请的具体实施方式中，第一狭槽113的宽度和第二狭槽114的宽度可以为10mm至40mm，以避免第一狭槽113和第二狭槽114过窄而导致加热器在使用过程中出现打火及其他安全事故，从而增加了加热器的使用寿命。
参考图3所示，电极脚板12的厚度可以为32mm至40mm，宽度可以为150mm至175mm，相比常规的电极脚板，该电极脚板12的厚度增加了3mm至8mm，宽度增加了5mm至10mm，使得电极脚板12的热态电阻小于常规电极脚板的热态电阻，从而使得通电后电极脚板12所产生的热量减小，对坩埚底部的烘烤减弱，坩埚底部的温度降低，能够降低单晶硅棒头部的氧含量。
在本申请的具体实施方式中，作为一种选择，参考图3和图4所示，发热筒11可以包括多个拼接件111，即发热筒11可以由多个拼接件111拼接而成，相邻的两个拼接件111之间可以通过连接板102连接，以使得多个拼接件111围合成筒状结构。其中，连接板102可以通过紧固件与拼接件111紧固连接，紧固件可以为M10碳碳螺栓。
此外，各个拼接件111可以形状相同，且各个拼接件111和连接板102的电阻率一致。具体地，各个拼接件111和连接板102可以为静压石墨材质，且各个拼接件111和连接板102可以出自同一胚体，以确保各个拼接件111和连接板102电阻率一致。
在本申请的具体实施方式中，作为一种选择，发热筒11可以构造为一体成型。
在本申请的具体实施方式中，发热筒11可以采用石墨材质或碳碳材质制成，由于石墨具有导热性好的特点，因此可以使得发热筒11形成一个闭合的回路，在接通电源时可以产生热能。
在上述技术方案的基础上，本申请还提供一种单晶炉，包括坩埚(未示出)和上述技术方案中的加热器，其中，发热筒11的长度可以为坩埚的高度的0.35-0.5倍。
通过上述技术方案，本申请提供的单晶炉具有与上述技术方案中的加热器相同的技术效果，为了避免不必要的重复，在此不作赘述，此外，由于加热器的发热筒11的长度为坩埚总高的0.35倍至0.5倍，因此，本申请所提供的发热筒11与常规的发热筒相比，长度仅缩短了10mm至15mm，既能够避免对拉晶造成影响，又能够进一步使得发热筒11的高温区远离坩埚底部，而降低晶棒头部的含氧量。
使用传统的单晶炉与本申请所提供的单晶炉所得到的整炉头氧均值具有明显差异。如下表1所示，以整炉拉7根晶棒RCZ1～RCZ7为例，相较于传统的单晶炉，以整炉拉7根晶棒为例，背景数据代表传统单晶炉的数据，背景数据整炉头氧均值为16ppma，试验数据代表本申请所提供的单晶炉的数据，试验数据整炉头氧均值为14.3ppma，相比背景数据降低了1.7ppma，降氧效果显著。
表1
以上结合附图详细描述了本申请的优选实施方式，但是，本申请并不限于上述实施方式中的具体细节，在本申请的技术构思范围内，可以对本申请的技术方案进行多种简单变型，这些简单变型均属于本申请的保护范围。
另外需要说明的是，在上述具体实施方式中所描述的各个具体技术特征，在不矛盾的情况下，可以通过任何合适的方式进行组合，为了避免不必要的重复，本申请对各种可能的组合方式不再另行说明。
此外，本申请的各种不同的实施方式之间也可以进行任意组合，只要其不违背本申请的思想，其同样应当视为本申请所公开的内容。
需要说明的是，本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。
尽管已描述了本申请实施例的可选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例做出另外的变更和修改。所以，所附权利要求意欲解释为包括可选实施例以及落入本申请实施例范围的所有变更和修改。
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体与另一个实体区分开来，而不一定要求或者暗示这些实体之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的物品或者终端设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种物品或者终端设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括要素的物品或者终端设备中还存在另外的相同要素。
以上对本申请所提供的技术方案进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，同时，对于本领域的一般技术人员，依据本申请的原理及实现方式，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。

Claims (21)

  1. 一种单晶炉用加热器，其中，包括发热筒及电极脚板；
    所述发热筒为环绕单晶炉中坩埚设置的筒状结构；
    所述电极脚板包括第一电极脚板及第二电极脚板；
    所述第一电极脚板支撑所述发热筒的一侧，并用于与电源的第一电极连接；
    所述第二电极脚板支撑所述发热筒的另一侧，并用于与电源的第二电极连接；
    所述电极脚板的电阻率小于所述发热筒的电阻率。
  2. 根据权利要求1所述的加热器，其中，所述发热筒的电阻率大于等于11μΩ·m，所述电极脚板的电阻率小于等于10μΩ·m。
  3. 根据权利要求1所述的加热器，其中，所述发热筒的电阻率大于等于12μΩ·m，所述电极脚板的电阻率小于等于9μΩ·m。
  4. 根据权利要求1所述的加热器，其中，所述发热筒的径向方向上的厚度为15～30mm；所述发热筒的轴向方向上的高度为150～400mm；
    所述第一电极脚板及所述第二电极脚板的横截面厚度均为25～40mm，所述第一电极脚板及所述第二电极脚板的横截面宽度均为70～175mm。
  5. 根据权利要求1所述的加热器，其中，所述发热筒包括多个拼接件，多个所述拼接件围合连接形成所述发热筒。
  6. 根据权利要求5所述的加热器，其中，沿所述发热筒的轴线方向，各所述拼接件的投影均呈圆弧形。
  7. 根据权利要求6所述的加热器，其中，所述圆弧形的圆心角为60～180°。
  8. 根据权利要求5所述的加热器，其中，各所述拼接件的上部减薄，所述拼接件上部减薄区的厚度不小于12mm。
  9. 根据权利要求5所述的加热器，其中，各所述拼接件，从下端至上端逐渐减薄，所述拼接件的最薄厚度不小于12mm。
  10. 根据权利要求1所述的加热器，其中，所述第一电极脚板与所述第二电极脚板分别固定连接于两相对分布的所述拼接件上。
  11. 一种单晶炉用加热器，其中，包括发热筒及电极脚板；
    所述发热筒为环绕单晶炉中坩埚设置的筒状结构；
    所述电极脚板包括第一电极脚板及第二电极脚板；
    所述第一电极脚板支撑所述发热筒的一侧，并用于与电源的第一电极连接；
    所述第二电极脚板支撑所述发热筒的另一侧，并用于与电源的第二电极连接；所述发热筒与所述电极脚板之间的电阻比值为0.85～1：0～0.15。
  12. 根据权利要求11所述的加热器，其中，所述发热筒的电阻值的绝对值为25～60mΩ，所述电极脚板的电阻值的绝对值为0～1mΩ。
  13. 根据权利要求1或11所述的加热器，其中，所述发热筒包括相对的第一端面和第二端面，所述发热筒还包括由所述第一端面向所述第二端面延伸的第一狭槽，以及由所述第二端面向所述第一端面延伸的第二狭槽，所述第一狭槽和所述第二狭槽沿所述发热筒的周向交替排布，所述第二狭槽的末端与所述第一端面之间的距离小于所述第一狭槽的末端与所述第二端面之间的距离；
    所述电极脚板连接在所述发热筒靠近所述第二端面的一端。
  14. 根据权利要求13所述的加热器，其中，所述第一狭槽的长度不小于所述发热筒的长度的81％，所述第二狭槽的长度不大于所述发热筒的长度的89％。
  15. 根据权利要求13所述的加热器，其中，所述第一狭槽的末端与所述第二端面之间的距离不小于50mm，所述第二狭槽的末端与所述第一端面之间的距离不大于45mm。
  16. 根据权利要求13所述的加热器，其中，所述第一狭槽的宽度和所述第二狭槽的宽度为10mm至40mm。
  17. 根据权利要求13所述的加热器，其中，所述发热筒包括多个拼接件，相邻的两个所述拼接件之间通过连接板连接，以使得多个拼接件围合成筒状结构；各个所述拼接件和所述连接板的电阻率一致。
  18. 根据权利要求13所述的加热器，其中，所述发热筒构造为一体成型。
  19. 根据权利要求13所述的加热器，其中，所述发热筒采用石墨材质或碳碳材质制成。
  20. 一种单晶炉，其中，包括炉体及安装于所述炉体内部的如权利要求 1～21任意一项所述的单晶炉用加热器。
  21. 根据权利要求20所述的单晶炉，其中，还包括坩埚，其中，所述发热筒的长度为所述坩埚的高度的0.35倍至0.5倍。
PCT/CN2023/097422 2022-07-25 2023-05-31 一种单晶炉用加热器及单晶炉 WO2024021849A1 (zh)

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CN113061983A (zh) * 2021-04-21 2021-07-02 姜益群 一种半导体单晶硅的拉晶炉
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CN218291173U (zh) * 2022-07-25 2023-01-13 隆基绿能科技股份有限公司 加热器和单晶炉
CN219099375U (zh) * 2022-09-27 2023-05-30 隆基绿能科技股份有限公司 一种单晶炉用加热器及单晶炉

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US6080238A (en) * 1996-03-28 2000-06-27 Sumitomo Sitix Corporation Single crystal pulling method
CN1401598A (zh) * 2001-08-16 2003-03-12 株式会社神户制钢所 光纤预型件加热炉
CN106637385A (zh) * 2015-10-30 2017-05-10 西安通鑫半导体辅料有限公司 便于调节温度梯度的直拉单晶用加热器及直拉单晶方法
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