WO2024002031A1 - Chip temperature test method and apparatus - Google Patents

Chip temperature test method and apparatus Download PDF

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Publication number
WO2024002031A1
WO2024002031A1 PCT/CN2023/102517 CN2023102517W WO2024002031A1 WO 2024002031 A1 WO2024002031 A1 WO 2024002031A1 CN 2023102517 W CN2023102517 W CN 2023102517W WO 2024002031 A1 WO2024002031 A1 WO 2024002031A1
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WIPO (PCT)
Prior art keywords
chip
temperature
test
target
diode
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PCT/CN2023/102517
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French (fr)
Chinese (zh)
Inventor
焦慧芳
周雪
刘上源
陈周攀
朱国良
张敏
Original Assignee
华为技术有限公司
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Publication of WO2024002031A1 publication Critical patent/WO2024002031A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2834Automated test systems [ATE]; using microprocessors or computers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00Thermometers specially adapted for specific purposes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2872Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature

Definitions

  • the present application relates to the field of chip detection, and in particular, to a chip temperature testing method and device.
  • the test temperature of the chip is the actual on-chip temperature of the chip when performance testing is performed on the chip.
  • the ambient temperature of the chip under test or the real on-chip temperature of the chip under test is often tested, and the ambient temperature of the chip under test or the real on-chip temperature of the chip under test is used as the test temperature of the chip under test.
  • the chip under test is When the real on-chip temperature is different from the ambient temperature, the real on-chip temperature of the chip under test is in an unstable state, and the test temperature of the chip under test cannot be accurately determined through the ambient temperature of the chip under test or the real on-chip temperature of the chip under test, resulting in an inability to Provide an accurate testing environment for the chip under test, affecting the test accuracy of the chip under test.
  • embodiments of the present application provide a chip temperature testing method, which is applied to automated testing equipment ATE.
  • the ATE includes a parameter measurement unit PMU and a digital signal processing DSP chip.
  • the chip temperature testing method includes: if the target chip is in When the time in the test environment meets the stabilization time, the PMU obtains the electrical parameters of the diode of the ESD protection circuit of the target chip and sends the electrical parameters to the DSP chip, where the target chip is not powered on. state, the stabilization time is the time required for the temperature of the chip of the same type as the chip to be tested to reach the same temperature as the temperature of the test environment; the DSP chip receives the electrical parameters and derives the corresponding relationship from the electrical parameters based on the electrical parameters. Query the current temperature of the target chip in , and the corresponding relationship describes the relationship between the electrical parameters of chips of the same type as the target chip as the temperature changes.
  • the stabilization time is the time required for the temperature of the similar chip of the target chip obtained by the ATE to reach the same temperature as the ambient temperature of the test environment.
  • the stabilization time can be stored in the ATE in advance.
  • chips of the same type as the target chip can be chips that are similar to the target chip. Chips with the same specifications and made using the same process.
  • testing the chip temperature does not require changing the design of the chip.
  • the ESD protected diode of the target chip is directly used to test the temperature of the chip.
  • the target chip meets the stabilization time in the test environment, the target chip is obtained through automated testing equipment.
  • the voltage across the diode or/and the current flowing through the diode in the ESD protection circuit is then determined based on the corresponding relationship between the voltage or/and current and the voltage or/and current of the diode of the target chip and the temperature. Since the target chip The chip meets the stabilization time in the test environment, so the target chip and the test environment have reached thermal equilibrium or have a high probability of reaching thermal equilibrium. At this time, the temperature of the test chip is likely to be in a stable state.
  • the temperature of the target chip measured by ATE is the stability of the target chip.
  • the real temperature can be used to determine whether the target chip reaches the ambient temperature of the test environment, thereby improving the accuracy of the temperature test of the target chip.
  • the test performance of the target chip can be improved.
  • ATE only needs to test the target chip when the time of the target chip in the test environment is greater than or equal to the stable time, which reduces the number of tests and improves the efficiency of testing.
  • the relationship between the voltage and/or current of the diode of the target chip and the temperature of the target chip can be a linear relationship, that is, one current or voltage corresponds to one temperature, or it can also be a one-to-many relationship, for example, one temperature to corresponding A current range or voltage range, current range. In this way, if the voltage of the diode in the ESD protection circuit of the ATE test target chip is within the voltage range or the current is within the current range, it is determined that the target chip has reached the test temperature.
  • the current and/or the voltage obtained by the PMU are analog quantities.
  • analog quantities can more accurately reflect the current value or voltage value of the diode.
  • the PMU uses the analog quantity current or voltage as the processing object, which can improve the accuracy of the data.
  • the chip temperature testing method further includes: determining the corresponding relationship, and determining the corresponding relationship includes: the PMU obtains calibration test data of multiple similar chips, And send the calibration test data to the DSP chip, where the calibration test data includes: the excitation voltage received by the diode of the ESD protection circuit of the target chip, multiple temperatures of the target chip, and each temperature The corresponding current flowing through the diode, or the excitation current received by the diode of the ESD protection circuit of the target chip, multiple temperatures of the target chip, and the voltage across the diode corresponding to each temperature;
  • the DSP chip receives the calibration test data, determines the target data in the calibration test data based on the corresponding relationship between temperature and voltage or current under ideal conditions, and determines the temperature and voltage or current of the target chip based on the target data. Correspondence of current.
  • test data of similar chips of multiple target chips are obtained through multiple measurements, and the multiple test data are calibrated through the corresponding relationship between temperature and voltage or current under ideal conditions to reduce the cost.
  • the scope of test data improves the accuracy of test data. By measuring multiple similar chips, it reduces the process deviation between different chips and improves the applicable scope of the corresponding relationship.
  • the test environment includes ambient temperature
  • the chip temperature testing method further includes: determining the stabilization time
  • the determining method of determining the stabilization time includes: The PMU obtains stable test data of similar chips in the test environment, and sends the stable test data to the DSP chip, where the test environment includes ambient temperature, and the stable test data includes the stable test data of the similar chips under ambient temperature. Corresponding electrical parameters at multiple test time points; the DSP chip receives the stable test data and determines the stable time based on the stable test data.
  • the stabilization time of the target chip is determined by measuring similar chips at multiple time points to reduce process deviations between different chips and improve the applicable scope of the stabilization time.
  • the PMU obtaining the voltage across the diode of the ESD protection circuit of the target chip and/or the current flowing through the diode includes: the PMU transmitting the voltage to the target chip.
  • the PMU applies an excitation voltage to the diode of the ESD protection circuit of the target chip to obtain the current flowing through the diode, or the PMU applies an excitation current to the diode of the ESD protection circuit of the target chip to obtain the voltage across the diode.
  • the excitation current or voltage can be applied to the diode of the ESD protection circuit of the target chip through the PMU, and the current or voltage of the diode after receiving the excitation can be obtained.
  • the chip temperature testing method further includes: if the current temperature of the target chip is different from the ambient temperature of the test environment, the PMU determines the temperature according to multiple preset test time points.
  • the target chip is tested to obtain the current or voltage of the diode of the ESD protection circuit of the target chip, and the current or voltage is sent to the DSP chip; the DSP chip relies on the current or voltage and The corresponding relationship determines the temperature of the target chip, and updates the stabilization time according to a preset test time point when the temperature of the target chip is the same as the ambient temperature.
  • the target chip is tested again according to the preset test time point to obtain the temperature of the target chip, and the temperature of the target chip is the same as the ambient temperature of the test environment.
  • the stabilization time is updated at the time point corresponding to the temperature of the target chip to ensure the accuracy of the stabilization time.
  • the ATE further includes a test module
  • the chip temperature testing method further includes: if the temperature of the target chip is equal to the ambient temperature of the test environment, then the The test module powers on the target chip and performs performance or reliability testing.
  • the target chip when the time of the target chip in the test environment is greater than or equal to the stable time and the current temperature of the target chip obtained by the test is the same as the temperature of the test environment, it is determined that the temperature of the chip to be tested and the test environment have reached thermal equilibrium, that is, the temperature to be tested is When the stable real temperature of the chip reaches the temperature required for other tests, the target chip can be powered on to test the performance, reliability, etc. of the target chip.
  • an automated test equipment in a second aspect, includes a parameter measurement unit PMU and a digital signal processing DSP chip; if the time of the target chip in the test environment meets the stabilization time, the PMU is used to obtain the target
  • the electrical parameters of the diode of the ESD protection circuit of the chip are sent to the DSP chip, where the target chip is in an unpowered state, and the stabilization time is the time between the temperature of the target chip and the The time required for the temperature of the test environment to reach the same level; the DSP chip is used to receive the electrical parameters and determine the temperature of the target chip based on the electrical parameters and the corresponding relationship, the corresponding relationship describes the target chip The relationship between the electrical parameters of similar chips as a function of temperature.
  • the electrical parameters obtained by the PMU are analog quantities.
  • the PMU is also used to obtain calibration test data of multiple similar chips, and send the calibration test data to the DSP chip, where the calibration test data Including the excitation voltage received by the diode of the ESD protection circuit of the same chip, the multiple temperatures of the target chip and the current flowing through the diode corresponding to each temperature, or the excitation received by the diode of the ESD protection circuit of the target chip.
  • the DSP chip is also used to receive the calibration test data, based on the corresponding relationship between temperature and voltage or current under ideal conditions Determine the target data in the test data; and determine the corresponding relationship between the temperature and voltage or current of the similar chip based on the target data.
  • similar chips are chips with the same specifications and manufacturing process as the target chip.
  • the PMU is also used to obtain stable test data of similar chips in the test environment, and send the stable test data to the DSP chip, wherein the test environment Including the ambient temperature, the test data includes the current or voltage corresponding to the similar chip at multiple test time points under the ambient temperature; the DSP chip is also used to receive the stable test data and determine based on the stable test data the stabilization time.
  • the PMU is further used to apply an excitation voltage to a diode of the ESD protection circuit of the target chip to obtain a current flowing through the diode, or the PMU is further used to Apply an excitation current to the diode of the ESD protection circuit of the target chip to obtain the voltage across the diode.
  • the PMU is also used to test the target chip according to multiple preset test time points, so as to Obtain the electrical parameters of the diode of the ESD protection circuit of the target chip, and send the electrical parameters to the DSP chip; the DSP is also used by the module to determine the target chip based on the electrical parameters and the corresponding relationship. temperature, and update the stabilization time according to a preset test time point when the temperature of the target chip is the same as the temperature.
  • the ATE further includes a test module. If the temperature of the target chip is equal to the ambient temperature of the test environment, the test module powers on the target chip. , perform performance or reliability testing.
  • embodiments of the present application provide an automated test equipment, including: one or more processor parameter measurement units PMU; a digital signal processing DSP chip; a memory for storing one or more programs; when the one or A plurality of programs are executed by the PMU or the DSP chip, so that the PMU implements the operations performed by the PMU in the chip temperature testing method described in the first aspect, and the DSP chip implements any of the operations described in the first aspect.
  • embodiments of the present application provide a computer-readable storage medium on which a computer program is stored.
  • the program is executed by a processor, the chip temperature testing method as described in any one of the first aspects is implemented.
  • Figure 1 is a schematic module diagram of an ATE provided by an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a relationship curve between the voltage across a diode and temperature under an ideal state according to an embodiment of the present application.
  • FIG. 3 is a schematic diagram illustrating the relationship between the voltage across a diode and the temperature in an actual scenario according to an embodiment of the present application.
  • FIG. 4 is a schematic flowchart of a method for determining a correspondence relationship provided by an embodiment of the present application.
  • FIG. 5 is a schematic flowchart of a method for determining the stabilization time provided by an embodiment of the present application.
  • FIG. 6 is a schematic flowchart of a chip temperature testing method provided by an embodiment of the present application.
  • FIG. 7 is a schematic diagram of an ATE test target chip according to an embodiment of the present application.
  • Figure 8 is a hardware schematic diagram of automated testing equipment according to an embodiment of the present application.
  • Thermal balance refers to the situation where the internal temperature of an object in contact with the outside world (such as a target chip) is uniform everywhere and equals the outside temperature. In thermal equilibrium, there is no heat exchange between various parts of the object and between the object and the outside world.
  • Analog quantity refers to a quantity in which a variable (such as voltage, current) changes continuously within a certain range; that is, it can take any value (within the value domain) within a certain range (definition domain). For example, analog current value, analog voltage value.
  • Digital quantities are discrete quantities, not continuously changing quantities. They can only take on a few discrete values. For example, a binary digital variable can only take on two values. For example, digital current value, digital voltage value.
  • the target chip has an electrostatic discharge (Electro-Static discharge, ESD) protection circuit, and the ESD protection circuit has a diode.
  • ESD Electro-Static discharge
  • the stabilizing time soaking time
  • the voltage across the diode or/and the current flowing through the diode in the ESD protection circuit of the target chip is obtained through automated test equipment (ATE), and then The temperature of the target chip is determined based on the corresponding relationship between the voltage or/and current and the voltage or/and current of the diode of the target chip and the temperature.
  • the stabilizing time is the time required for the real temperature of the test sample (Device under test, DUT) to reach thermal equilibrium with its test environment.
  • the stabilizing time can be a time period, such as 45 seconds to 60 seconds.
  • the stabilization time can also be a time point, such as 50 seconds.
  • the temperature of the test environment is different, and the stability time of the test sample (such as the target chip) is different.
  • the stability time of the test sample is 1 minute, that is, the test sample is placed in a 60° test environment.
  • the time for the test sample and the test environment to reach thermal equilibrium is 1 minute; if the ambient temperature is 80°, the stabilization time of the test sample is 1 minute and 20 seconds.
  • the target chip meets the stabilization time in the test environment, the target chip and the test environment reach thermal equilibrium. At this time, the temperature of the test chip is in a stable state.
  • the temperature of the target chip measured by ATE is the stable real temperature of the target chip. Based on this temperature, determine whether the target chip reaches the test temperature. By accurately determining the test temperature of the target chip, the test performance of the target chip can be improved.
  • the test temperature may be the ambient temperature of the test environment.
  • Figure 1 is a schematic module diagram of an ATE provided by an embodiment of the present application.
  • the ATE includes a parameter measurement unit (power management unit, PMU) and a digital signal processing (digital signal processing, DSP) chip.
  • PMU power management unit
  • DSP digital signal processing
  • the PMU when the target chip is in an unpowered state and the time in the preset test environment meets the stabilization time, the PMU is used to test the target chip.
  • the PMU can perform voltage and current measurement on the diode of the ESD protection circuit of the target chip, or it can also perform current and voltage measurement on the diode to obtain the electrical parameters of the diode, and then send the electrical parameters to the DSP chip.
  • the electrical parameters can be voltage and/or current.
  • the DSP chip is used to receive the voltage or current sent by the PMU, and determine the true temperature of the target chip based on the received voltage or current and the corresponding relationship.
  • the corresponding relationship is the relationship between the voltage or current of the diode of the ESD protection circuit of the target chip and the temperature corresponding to the voltage or current.
  • test method of this application can realize the test of the target chip temperature through the PMU and DSP chips of the ATE shown in Figure 1. Compared with the existing ATE that tests the temperature of the target chip through thermocouples, the structure of the ATE is simplified. , saving costs.
  • the ATE in Figure 1 is only an example of the ATE and is not a limitation.
  • the ATE may have more or fewer modules than those shown in Figure 1 .
  • the ATE also includes a numerically controlled power board and a clock generation module.
  • the numerically controlled power board is used to provide power for the ATE
  • the clock generation module is used to provide clock signals for each module of the ATE.
  • the ATE also includes a Pin Electronics (PE) device, and the PMU and DSP chips are located in the Pin Electronics device.
  • PE Pin Electronics
  • the DSP chip can be an ASIC chip, FPGA, SoC, or CPU.
  • the DSP chip is an FPGA
  • the CPU module sends an instruction sequence to the FPGA
  • the FPGA receives the instruction sequence and drives the pin electronic device according to the agreed communication protocol, so that the pin electronic device
  • the PMU module tests and collects data on the target chip.
  • the PMU applies an excitation current to the diode of the ESD protection circuit of the target chip to obtain the voltage across the diode.
  • the PMU sends the collected data to the DSP chip of the FPGA.
  • the DSP chip determines the temperature of the target chip based on the collected data.
  • the PMU is a Digital to Analog Converter (DAC) circuit module, used to provide a DC test channel to collect test signals of the target chip, such as collecting diodes in the ESD protection circuit of the target chip. voltage or/and current.
  • DAC Digital to Analog Converter
  • diodes have the following characteristics: as the temperature increases, the junction resistance of the diode becomes smaller.
  • the chip temperature testing method proposed in the embodiment of this application is implemented based on this characteristic of the diode. In this way, when the diode is at different temperatures and different excitation currents are applied to the diode, the voltages across the diode are different. Under ideal conditions, the excitation current received by the diode has a linear relationship with the voltage across the diode; similarly, when the diode is at different temperatures and different voltages are applied to the diode, the current flowing through the diode is different, and the excitation voltage received by the diode is different from the voltage across the diode. The diode current has a linear relationship. Please refer to Figure 2.
  • Figure 2 is the relationship curve between the voltage across the diode and the temperature under ideal conditions.
  • Figure 2 includes two relationship curves.
  • the excitation currents applied by the PMU to the diode are 100 ⁇ A and 1500 ⁇ A respectively.
  • the voltage across each diode corresponds to a temperature value, that is, the voltage at both ends of the diode has a linear relationship with the temperature of the diode. Therefore, when the ATE DSP chip receives the voltage sent by the PMU , the temperature of the chip corresponding to the voltage can be determined based on the corresponding relationship between voltage and temperature in the relationship curve in Figure 5.
  • ATE can conduct multiple tests on one or more similar chips to obtain multiple calibration test data, based on The relationship curve under the ideal state determines the target data in the calibration test data, and based on the target data, the corresponding relationship between the voltage and temperature at both ends of the diode of the ESD protection circuit of the similar chip of the target chip is determined.
  • Figure 3 is the relationship curve between the voltage and temperature of the diode of the similar chip of the target chip in the actual scenario. Figure 3 includes two relationship curves.
  • the PMU applies to the diode
  • the excitation currents are 100 ⁇ A and 1500 ⁇ A respectively.
  • each temperature of the similar chip of the target chip corresponds to a voltage range.
  • the target The temperature of the chip is 60°.
  • the preset temperature is 60°
  • the voltage across the diode of the target chip obtained by ATE measurement ranges from 0.41V to 0.43V, it can be determined that similar chips of the target chip reach Preset temperature is 60°.
  • the electrical parameters of the diode of the ESD protection circuit of the target chip can be obtained through the PMU, and the temperature of the target chip can be determined based on the corresponding relationship between the electrical parameters and similar chips of the target chip in Figure 3.
  • FIG. 4 is a method for determining the correspondence relationship between a target chip and similar chips provided by an embodiment of the present application.
  • the determination method includes the following steps:
  • PMU obtains the calibration test data of multiple similar chips and sends the calibration test data to the DSP chip.
  • the calibration test data includes the excitation voltage received by the diode of the ESD protection circuit of the same chip of the target chip, multiple temperatures of the same chip and the current flowing through the diode corresponding to each temperature, or the diodes of the ESD protection circuit of the same chip.
  • chips of the same type as the target chip are considered to have the same stabilization time with a high probability.
  • the target chip and the package of a certain batch of chips have similar specifications and parameters
  • the target chip is considered to be a similar chip of this batch of chips
  • the target chip and the package of a certain batch of chips have the same specifications and parameters
  • the target chip is considered to be the same type of chips in this batch of chips
  • the package of the target chip and a certain batch of chips have the same specifications and parameters and the manufacturer is the same
  • the target chip is considered to be the same kind of chips as this batch of chips
  • the package of the target chip and a certain batch of chips have the same specifications and parameters, are made by the same manufacturer, and are manufactured in the same time period
  • the target chip and this batch of chips are considered to be of the same type.
  • It can be multiple chips with the same specifications as the target chip, or it can be a single chip with the same specifications as the target chip.
  • the diodes of multiple ESD protection circuits of a single similar chip can be measured multiple times.
  • the DSP chip receives the calibration test data sent by the PMU, and determines the target data in the calibration test data based on the corresponding relationship between voltage or current and temperature under ideal conditions.
  • the voltage or current under ideal conditions has a linear relationship with temperature.
  • the DSP chip determines whether the calibration test data conforms to the corresponding relationship between voltage or current and temperature under the ideal state. If the calibration test data conforms to the corresponding relationship between voltage or current and temperature under the ideal state, then the calibration test data is determined as Target data; if the calibration measurement data does not conform to the corresponding relationship between voltage or current and temperature under ideal conditions, discard or ignore the measurement data.
  • a deviation threshold is set in the DSP chip of ATE. If the DSP chip determines that the correspondence between the calibration test data and the voltage or current and temperature under the ideal state exceeds the deviation threshold, the calibration test data will be deleted; if If the data deviation between the calibration test data and the corresponding relationship between voltage or current and temperature under the ideal state is within the deviation threshold range, the calibration test data is used as the target data.
  • the excitation current applied to the diode of the ESD protection circuit is 100 ⁇ A
  • the ordinate y is the voltage
  • the abscissa x is the temperature
  • ATE's PMU performs current pressure measurement on similar chips of the target chip.
  • the applied excitation current is 100 ⁇ A.
  • the calibration test data obtained are A(1,4.1), B(2,6.5), C(3,12), D(4,12.5), where the deviation threshold is 0.15, the temperature in test data C is 12°, the temperature in the ideal state is 10°, the data deviation is 0.2 and greater than the deviation threshold, the calibration test data A, B and D The data deviation is less than the deviation threshold, and the test data A, B and D are used as target data.
  • the target data in the ATE test data is determined based on the corresponding relationship between voltage or current and temperature in the ideal state, so as to eliminate unconforming test data from the test data and improve the accuracy of the test data.
  • the DSP chip determines the corresponding relationship between the voltage or current and temperature of similar chips based on the target data.
  • the relationship between the current or voltage of similar chips and temperature can be a linear relationship as shown in 2; it can also be a nonlinear relationship, as shown in Figure 3.
  • the voltage range across each diode Corresponds to a temperature.
  • the calibration test data of similar chips is calibrated based on the relationship between current or voltage and temperature under ideal conditions to achieve Precisely process the calibration test data to improve the accuracy of the target data, thereby improving the accuracy of the correspondence between the current or voltage and temperature of similar chips of the target chip.
  • ATE Before testing the temperature of the target chip on ATE, you can test similar chips of the target chip to determine the stabilization time of similar chips of the target chip. ATE can conduct temperature tests on the target chip based on the stabilization time of similar chips. That is, when the target chip resides in the test environment for a time greater than or equal to the stable time, ATE performs a temperature test on the target chip to reduce the number of temperature tests and improve the efficiency of temperature tests.
  • the stabilization time of chips of different specifications is different. Therefore, the chips are classified according to their device types and process characteristics, and then the stabilization time of each type of chip is determined. In order to test the target chip, the corresponding stabilization time of similar chips of the target chip can be directly used.
  • the corresponding stabilization time of the chip will also be different. For example, if the temperature of the test environment is 30°, the corresponding stabilization time of the chip is 30 seconds; if the temperature of the test environment is 40°, the corresponding stabilization time of the chip is 40 seconds. Therefore, in order to obtain the stabilization time of the target chip corresponding to a specific temperature, one or more similar chips of the target chip can be placed in a test environment (such as an incubator) at a specific temperature, and then multiple test time points are set, and each test time point is At each test time point, the temperature of similar chips is tested through the ATE shown in Figure 1.
  • a test environment such as an incubator
  • FIG. 5 is a method for determining the stabilization time of a similar chip of a target chip provided by an embodiment of the present application.
  • the method of determining the stabilization time includes the following steps:
  • S501 and PMU obtain the stable test data of similar chips in the test environment and send the stable test data to the DSP chip.
  • the test environment includes the ambient temperature
  • the stable test data includes the current or voltage corresponding to multiple time points of similar chips under the ambient temperature.
  • the PMU applies excitation voltage or excitation current to the diodes of the ESD protection circuits of the similar chips at multiple preset test time points, and obtains the voltage or voltage across the diode after receiving the excitation.
  • the current flowing through the diode The voltage across the diode or the current flowing through the diode after being excited will be treated as the same type.
  • Stable test data of the chip and send the stable test data to the DSP chip.
  • DSP chip receives stable test data and determines the stabilization time based on the stable test data.
  • the DSP chip can determine the temperatures of similar chips corresponding to multiple test time points based on multiple test time points and corresponding relationships in the stable test data, and then based on multiple test time points with the same temperature. Consecutive test time points determine stabilization time.
  • the correspondence relationship describes the relationship between the voltage across the diode of the ESD protection circuit of the same chip as the target chip or the current flowing through the diode and the temperature of the similar chip.
  • the stabilization time can be determined from multiple consecutive test time points with the same current or voltage.
  • the relationship between the voltage and/or current of diodes of similar chips of the target chip and the temperature of similar chips can be a linear relationship, that is, one current or voltage corresponds to one temperature, or it can be a many-to-one relationship, such as many.
  • a current or voltage corresponds to a temperature value, or a current range or voltage range corresponds to a temperature.
  • a current or voltage range corresponds to a temperature, for example, when the voltage across the diode is 0.7V ⁇ 0.8V and the temperature of the target chip is 30°, then when the ATE tests the target chip temperature, when the diode If the current is within the current range corresponding to the preset temperature or the voltage of the diode is within the voltage range, it can be determined that the target chip has reached the preset temperature.
  • the stabilization time is determined based on the stability test data, including, but not limited to, the following methods.
  • Method 1 Determine the time when the temperature of the similar chip of the target chip is the same as the ambient temperature of the test environment as the stabilization time, or determine the time when the current or voltage of the diode of the similar chip is equal to the current or voltage corresponding to the ambient temperature of the test environment as the stable time. stable schedule.
  • the test time point at which the temperature of the test environment first appears to be the same among the temperatures of similar chips corresponding to multiple test time points is determined as the stabilization time, or the voltage or current corresponding to the multiple test points is determined as the stabilization time.
  • the stabilization time is determined before the test time point when the voltage or current corresponding to the temperature of the test environment is equal for the first time. For example, assuming that the ambient temperature is 35°, and the time point when the temperature of a similar chip in the ATE test first changes to 35° is 1 minute and 30 seconds, the stabilization time is 1 minute and 30 seconds.
  • Method 3 when the temperatures of similar chips tested by ATE at multiple consecutive test time points are all equal and at ambient temperature, the corresponding stabilization time can be determined based on multiple consecutive test time points where the temperatures of similar chips are the same. Or when the voltages or currents of diodes of similar chips tested by ATE at multiple consecutive test time points are all equal, the corresponding stabilization time can be determined based on multiple consecutive test time points where the voltage or current of similar chips are the same. For example, ATE tests the temperature of similar chips every 10 seconds. The temperatures of similar chips tested by ATE at 1 minute 20 seconds, 1 minute 30 seconds, 1 minute 40 seconds, and 1 minute 50 seconds are all the same and equal to the ambient temperature. ATE's DSP chip determines the stabilization time based on the above multiple continuous test time points: 1 minute 25 seconds to 1 minute 35 seconds.
  • ATE in order to improve the accuracy of the stabilization time, when the ambient temperature of the test environment is determined, ATE can conduct multiple tests on the same type of chip through the method shown in Figure 5 to obtain multiple stable schedule.
  • ATE's DSP chip can determine the stabilization time of similar chips based on multiple stabilization times. For example, ATE conducts multiple rounds of testing on the same type of chip to obtain the stabilization time of each round of testing.
  • ATE's DSP chip calculates the average of multiple stabilization times and uses the average as the stabilization time of the same type of chip. It can be understood that through multiple measurements, the process deviations of different chips can be covered and the accuracy of the chip's stabilization time can be improved.
  • Method 5 In other embodiments, ATE tests multiple similar chips with the same specifications to obtain multiple stabilization times, and ATE's DSP chip determines the stabilization time of similar chips based on the multiple stabilization times.
  • similar chips include: chip 1, chip 2, and chip 3 with the same specifications. Test three similar chips through ATE, and obtain the stability time T1 corresponding to chip 1, the stability time T2 corresponding to chip 2, and the stability time T2 corresponding to chip 3. Stability time T3, ATE's DSP chip determines that the stabilization time of similar chips of the target chip is (T1+T2+T3)/3.
  • ATE After determining the stabilization time and corresponding relationship of similar chips of the target chip, ATE can perform a temperature test on the target chip.
  • Figure 6 is a schematic flow chart of a chip temperature testing method provided by an embodiment of the present application. This chip temperature test method can be applied to ATE. The following uses the chip temperature test method applied to the ATE in Figure 1 as an example for detailed explanation. As shown in Figure 6, the chip temperature testing method includes the following steps.
  • the PMU obtains the electrical parameters of the diode of the ESD protection circuit of the target chip and sends the electrical parameters to the DSP chip.
  • the stabilization time is the time required for the temperature of similar chips of the target chip to reach the same temperature as the ambient temperature of the test environment.
  • the electrical parameters include voltage and current.
  • the target chip when performing performance testing on the target chip, the target chip is placed in a test environment with a preset temperature (for example, 35°C). When the temperature of the target chip reaches the preset temperature, the target chip can be powered on. , and perform performance testing on the target chip. In order to ensure that the real on-chip temperature of the target chip is at the preset temperature.
  • a preset temperature for example, 35°C
  • the residence time of the target chip in the test environment is greater than or equal to the stable time, determine that the time of the target chip in the test environment meets the stable time, the target chip and the test environment reach thermal equilibrium, and the temperature of the target chip is in a stable state, and then ATE measures the target chip temperature to improve the accuracy of the temperature measurement of the target chip, and use the temperature of the target chip measured by ATE to determine whether the target chip has reached the ambient temperature of the test environment. If the temperature measured by ATE is the same as the ambient temperature, it is determined that the target chip has reached If the temperature of the target chip does not reach the ambient temperature, measures can be taken, such as increasing the preset time of the target chip in the preset test environment and resetting the target chip. Conduct a temperature test to ensure that the target chip reaches the ambient temperature of the test environment.
  • FIG. 7 is a schematic diagram of an ATE test target chip provided by an embodiment of the present application.
  • the ESD protection circuit includes diodes D1 and D2.
  • ATE's PMU can perform voltage measurement on diodes D1 and D2. Specifically, the PMU applies current to the diodes D1 and D2 through the signal pin 1 and the signal pin 2 of the target chip to obtain the voltages across the diodes D1 and D2.
  • the PMU can apply different currents to diodes D1 and D2 and obtain the voltages across diodes D1 and D2 corresponding to each current.
  • the PMU of ATE can perform voltage and current measurement on diodes D1 and D2. Specifically, the PMU applies voltage to the diodes D1 and D2 through the signal pins of the target chip to obtain the current flowing through the diodes D1 and D2.
  • the current or voltage obtained by the PMU is an analog quantity. Compared with the digital quantity, the analog quantity can more accurately reflect the current value or voltage value at both ends of the diode.
  • the PMU uses the analog quantity current or voltage as the processing object. Can improve the accuracy of data. If the voltage across the diode and/or the current flowing through the diode obtained by the PMU are digital quantities, the PMU performs digital-to-analog conversion on the voltage drop across the diode and/or the digital quantity of the current flowing through the diode to obtain the voltage across the diode. and/or an analog quantity of the current flowing through the diode.
  • the DSP chip receives the electrical parameters and determines the current temperature of the target chip based on the electrical parameters and the corresponding relationship.
  • the correspondence relationship describes the changing relationship between the electrical parameters and temperature of similar chips of the target chip.
  • the ATE stores the corresponding relationship between similar chips of the target chip.
  • the PMU sends the voltage or current of the diode of the ESD protection circuit of the target chip to the DSP chip
  • the DSP chip queries the current current value of the target chip from the corresponding relationship based on the electrical parameters. temperature.
  • the PMU applies different voltages or excitation currents to the diodes of the ESD protection circuit of the target chip, the corresponding relationship between the voltage or current and the temperature of the target chip is also different. Therefore, the PMU is also used to send the voltage or excitation current applied to the diode of the ESD protection circuit of the target chip to the DSP chip. After receiving the voltage or excitation current, the DSP chip determines the corresponding relationship between similar chips based on the voltage or excitation current, and then based on The corresponding relationship with the electrical parameters determines the current temperature of the target chip.
  • the above ATE method of determining the temperature of the target chip is measured under the premise that the target chip meets the stabilization time. At this time, the target chip and its test environment reach thermal equilibrium, so the current temperature of the target chip is in a stable state. That is, the current temperature of the target chip in the ATE test is its stable temperature. Temperature testing of the target chip through the stabilization time can improve the accuracy and efficiency of the temperature test of the target chip, and is especially suitable for temperature test scenarios of large batches of chips. In addition, by setting the stabilization time, the number of invalid tests can be reduced to improve the efficiency of temperature testing.
  • the above test method obtains the current or voltage of the diode of the ESD protection circuit of the target chip through ATE, and determines the temperature of the target chip based on the corresponding relationship between the current or voltage and similar chips.
  • This temperature is the real on-chip temperature of the target chip, which is equivalent to Compared with testing the temperature near the target chip through a thermocouple, the above temperature testing method improves the accuracy of the target chip temperature test, simplifies the structure of the ATE, and saves the cost of the ATE.
  • the chip temperature testing method of the present application can be used to determine whether the target chip has reached a preset temperature before performing a performance test on the target chip.
  • the preset temperature can be the ambient temperature of the test environment.
  • the ambient temperature of the test environment can be adjusted to be the same as the preset temperature, and the target chip is placed in the test environment so that the temperature of the target chip reaches the preset temperature.
  • the preset temperature may be the temperature that the target chip reaches for performance testing. For example, if this performance test requires the temperature of the target chip to be at 45°, the default temperature is 45°.
  • the above chip temperature testing method also includes:
  • the PMU tests the target chip based on multiple test time points to obtain the current or voltage of the diode of the ESD protection circuit of the target chip corresponding to the multiple test time points, and Send the current or voltage to the DSP chip;
  • the DSP chip receives current or voltage, determines the temperature of the target chip based on the current or voltage and the corresponding relationship, and updates the stabilization time based on the test time point when the temperature of the target chip is the same as the ambient temperature of the test environment.
  • the DSP chip determines the current temperature of the target chip based on the corresponding relationship between similar chips and the received current and voltage.
  • the PMU determines the current temperature of the target chip based on the preset multiple test times. Click to test the target chip again, and send the current or voltage obtained by the retest to the DSP chip.
  • the DSP chip determines the current temperature of the target chip corresponding to the test time point based on the current or voltage and the corresponding relationship, then determines the test time point corresponding to the current temperature of the target chip that is the same as the ambient temperature of the test environment, and finally updates the stability based on the test time point time.
  • the preset temperature is 35° and the corresponding stabilization time is 30 seconds
  • the PMU applies an excitation current to the diode and obtains the The voltage across the diode, or the PMU applies an excitation voltage to the diode and obtains the current flowing through the diode after applying the excitation voltage.
  • other devices may apply current or excitation voltage to the diodes of the ESD protection circuit of the target chip or other modules of the ATE may apply current or excitation voltage to the diodes of the ESD protection circuit of the target chip.
  • the ATE also includes a test module (not shown).
  • the test module is used to perform a power-on test on the target chip. For example, if the current temperature of the target chip reaches a preset temperature (for example, the ambient temperature of the test environment), the test The module starts to power on the target chip to perform performance or reliability testing.
  • the above chip temperature testing methods also include:
  • the test module performs a power-on test on the target chip. For example, perform high and low temperature tests on targets.
  • FIG. 8 is a structural diagram of the automated testing equipment 110 provided by the embodiment of the present application.
  • the automated test equipment 110 includes: MCU 10, transmitter 20, receiver 30, memory 40, port 50 and DSP chip.
  • the memory 40, the transmitter 20, the receiver 30, the MCU 10 and the DSP chip 60 may be connected through a bus.
  • the memory 40, the transmitter 20, the receiver 30, the DSP chip 60, and the MCU 10 may not have a bus structure, but may have other structures, such as a star structure, which is not specifically limited in this application.
  • the memory 40 may include read-only memory (Read Only Memory, ROM), random access memory (Random Access Memory, RAM), and disk memory.
  • ROM read-only memory
  • RAM random access memory
  • disk memory disk memory.
  • the memory 40 is used to store data required when the MCU is running.
  • the number of memories 40 is one or more and is used to store one or more programs.
  • the number of ports 50 is one or more, used to connect to the upper or lower automated test equipment 110 . If the automated test device 110 is an automated test device 110 connected to a host or a server, port 50 is also used to connect to the host or server.
  • the transmitter 20 and the receiver 30 may be physically independent of each other or integrated together.
  • Transmitter 20 can transmit data through port 50.
  • Receiver 30 may receive data through port 50.
  • the PMU implements the operations performed by the PMU in the chip temperature testing method of any of the above embodiments
  • the DSP chip implements the chip temperature testing method of any of the above embodiments.
  • the ATE also includes a test module 70, which is used to perform a power-on test on the target chip when the temperature of the target chip is the same as the ambient temperature of the test environment.
  • embodiments of the present application may be provided as methods, systems, or computer program products. Accordingly, the present application may take the form of a hardware embodiment, a software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein. These computer program codes may be stored in computer-readable memory that directs a computer or other programmable data processing device to operate in a particular manner.
  • This embodiment also provides a computer storage medium.
  • Computer instructions are stored in the computer storage medium.
  • the automated testing equipment executes the above related method steps to achieve the chip temperature in the above embodiment. Test Methods.
  • This embodiment also provides a computer program product.
  • the automated testing equipment performs the above related steps to implement the chip temperature testing method in the above embodiment.
  • inventions of the present application also provide a device.
  • This device may be a chip, a component or a module.
  • the device may include a connected processor and memory; wherein the memory is used to store computer execution instructions.
  • the processor may execute the computer execution instructions stored in the memory to cause the chip to perform the chip temperature test in each of the above method embodiments. method.
  • the disclosed devices and methods can be implemented in other ways.
  • the device embodiments described above are only illustrative.
  • the modules or the division of modules are only a logical function division. In actual implementation, there may be other division methods, for example, multiple modules or components may be combined. Either it can be integrated into another device, or some features can be ignored, or not implemented.
  • the coupling or direct coupling or communication connection between each other shown or discussed may be through some interfaces, indirect coupling or communication connection of devices or modules, which may be in electrical, mechanical or other forms.
  • a module described as a separate component may or may not be physically separate.
  • a component shown as a module may be one physical module or multiple physical modules, that is, it may be located in one place, or it may be distributed to multiple different places. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment.
  • each functional module in each embodiment of the present application can be integrated into one processing module, or each module can exist physically alone, or two or more modules can be integrated into one module.
  • the above integrated modules can be implemented in the form of hardware or software function modules.
  • the integrated module is implemented in the form of a software function module and sold or used as an independent product, it can be stored in a readable storage medium.
  • the technical solutions of the embodiments of the present application are essentially or contribute to the existing technology, or all or part of the technical solution can be embodied in the form of a software product, and the software product is stored in a storage medium , including several instructions to cause a device (which can be a microcontroller, a chip, etc.) or a processor to execute all or part of the steps of the methods described in various embodiments of this application.
  • the aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM), random access memory (Random Access Memory, RAM), magnetic disk or optical disk and other media that can store program code. .

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Abstract

A chip temperature test method and apparatus applied to automatic test equipment ATE, the ATE comprising a parameter measurement unit PMU and a digital signal processing DSP chip (60). The chip temperature test method comprises: if the time a target chip spends in a test environment satisfies a stabilization time, the PMU acquiring the electrical parameters of a diode of an electrostatic discharge ESD protection circuit of the target chip, and sending the electrical parameters to the DSP chip (60), wherein the target chip is in a non-powered state; the DSP chip (60) receiving the electrical parameters and, according to the electrical parameters, querying corresponding relationships to find the current temperature of the target chip; the corresponding relationships describing how the electrical parameters of the same category of chip as the target chip change with temperature, and the stabilization time describing the time required for the temperature of the same category of chip as the target chip to reach the same temperature as the test environment.

Description

芯片温度测试方法及装置Chip temperature testing method and device
本申请要求于2022年6月28日提交中国专利局、申请号为202210784504.1,发明名称为“一种ATE高低温测试方法”的中国专利的优先权,以及于2022年9月5日提交中国专利局、申请号为202211080722.3,发明名称为“芯片温度测试方法及装置”的中国专利的优先权,上述中国专利全部内容通过引用结合在本申请中。This application requires the priority of the Chinese patent submitted to the China Patent Office on June 28, 2022, with the application number 202210784504.1 and the invention name "An ATE high and low temperature test method", and the Chinese patent submitted on September 5, 2022 Office, application number is 202211080722.3, and the invention title is "Chip Temperature Testing Method and Device". The entire content of the above-mentioned Chinese patent is incorporated into this application by reference.
技术领域Technical field
本申请涉及芯片检测领域,尤其涉及一种芯片温度测试方法及装置。The present application relates to the field of chip detection, and in particular, to a chip temperature testing method and device.
背景技术Background technique
随着芯片产业的不断发展,人们对芯片的可靠性和性能的期望越来越高。为了提升芯片的性能,需要对芯片进行精确的测试。为了保证芯片测试的准确性,测试芯片时需要为芯片提供一个精确的测试环境,特别是需要提供芯片的测试温度。芯片的测试温度是对芯片进行性能测试时芯片的片上真实温度。As the chip industry continues to develop, people have higher and higher expectations for the reliability and performance of chips. In order to improve the performance of the chip, the chip needs to be accurately tested. In order to ensure the accuracy of chip testing, it is necessary to provide a precise testing environment for the chip when testing the chip, especially the testing temperature of the chip. The test temperature of the chip is the actual on-chip temperature of the chip when performance testing is performed on the chip.
现有技术中常常测试被测芯片的环境温度或被测芯片的片上真实温度,并将被测芯片的环境温度或被测芯片的片上真实温度作为被测芯片的测试温度,但是当被测芯片的片上真实温度与环境温度不相同时,被测芯片的片上真实温度处于不稳定状态,无法通过被测芯片的环境温度或被测芯片的片上真实温度准确确定被测芯片的测试温度,导致无法为被测芯片提供精确的测试环境,影响被试芯片的测试精度。In the prior art, the ambient temperature of the chip under test or the real on-chip temperature of the chip under test is often tested, and the ambient temperature of the chip under test or the real on-chip temperature of the chip under test is used as the test temperature of the chip under test. However, when the chip under test is When the real on-chip temperature is different from the ambient temperature, the real on-chip temperature of the chip under test is in an unstable state, and the test temperature of the chip under test cannot be accurately determined through the ambient temperature of the chip under test or the real on-chip temperature of the chip under test, resulting in an inability to Provide an accurate testing environment for the chip under test, affecting the test accuracy of the chip under test.
发明内容Contents of the invention
鉴于以上内容,有必要提供一种芯片温度测试方法及装置,通过自动化测试设备ATE获取满足稳定时间的待测芯片的静电放电(Electrostatic Discharge,ESD)保护电路的二极管的电压和/或二极管的电流,依据电压或电流确定待测芯片的温度,在目标芯片与测试环境达到热平衡时测试目标芯片的片上真实温度,此时目标芯片的片上真实温度处于稳定状态,保证了目标芯片的温度的准确性。In view of the above, it is necessary to provide a chip temperature testing method and device to obtain the voltage and/or diode current of the diode of the electrostatic discharge (ESD) protection circuit of the chip under test that meets the stabilization time through automated testing equipment ATE , determine the temperature of the chip under test based on voltage or current, and test the real on-chip temperature of the target chip when the target chip and the test environment reach thermal equilibrium. At this time, the real on-chip temperature of the target chip is in a stable state, ensuring the accuracy of the temperature of the target chip. .
第一方面,本申请实施例提供一种芯片温度测试方法,应用于自动化测试设备ATE,所述ATE包括参数测量单元PMU和数字信号处理DSP芯片,所述芯片温度测试方法包括:若目标芯片在测试环境中的时间满足稳定时间,所述PMU获取所述目标芯片的ESD保护电路的二极管的电参数,并将所述电参数向所述DSP芯片发送,其中,所述目标芯片处于未上电状态,所述稳定时间为所述待测试芯片的同类芯片的温度与所述测试环境的温度达到相同所需的时间;所述DSP芯片接收所述电参数,并依据所述电参数从对应关系中查询所述目标芯片的当前温度,所述对应关系描述了与所述目标芯片同类芯片的电参数随温度的变化关系。In the first aspect, embodiments of the present application provide a chip temperature testing method, which is applied to automated testing equipment ATE. The ATE includes a parameter measurement unit PMU and a digital signal processing DSP chip. The chip temperature testing method includes: if the target chip is in When the time in the test environment meets the stabilization time, the PMU obtains the electrical parameters of the diode of the ESD protection circuit of the target chip and sends the electrical parameters to the DSP chip, where the target chip is not powered on. state, the stabilization time is the time required for the temperature of the chip of the same type as the chip to be tested to reach the same temperature as the temperature of the test environment; the DSP chip receives the electrical parameters and derives the corresponding relationship from the electrical parameters based on the electrical parameters. Query the current temperature of the target chip in , and the corresponding relationship describes the relationship between the electrical parameters of chips of the same type as the target chip as the temperature changes.
其中,稳定时间为ATE获取的目标芯片的同类芯片的温度与测试环境的环境温度达到相同所需的时间,稳定时间可预先存储于ATE中。其中,目标芯片同类芯片可为与目标芯片相 同规格、采用相同工艺制作的芯片。Among them, the stabilization time is the time required for the temperature of the similar chip of the target chip obtained by the ATE to reach the same temperature as the ambient temperature of the test environment. The stabilization time can be stored in the ATE in advance. Among them, chips of the same type as the target chip can be chips that are similar to the target chip. Chips with the same specifications and made using the same process.
采用上述技术方案,测试芯片温度不需要更改芯片的设计,直接利用目标芯片的ESD保护的二极管进行芯片的温度测试,且当目标芯片在测试环境中满足稳定时间时,通过自动化测试设备获取目标芯片的ESD保护电路中的二极管两端的电压或/和流过二极管的电流,然后依据电压或/和电流及目标芯片的二极管的电压或/和电流与温度的对应关系确定目标芯片的温度,由于目标芯片在测试环境中满足稳定时间,因此目标芯片与测试环境已达到热平衡或达到热平衡的概率较大,此时测试芯片的温度大概率处于稳定状态,ATE测量的目标芯片的温度为目标芯片的稳定的真实温度,可依据该温度确定目标芯片是否达到测试环境的环境温度,以提升目标芯片的温度测试的准确性。通过精确确定目标芯片的测试温度,可提升目标芯片的测试性能。ATE仅需在目标芯片在测试环境中的时间大于或等于稳定时间时对目标芯片进行测试,减少了测试次数,提升了测试的效率。Using the above technical solution, testing the chip temperature does not require changing the design of the chip. The ESD protected diode of the target chip is directly used to test the temperature of the chip. When the target chip meets the stabilization time in the test environment, the target chip is obtained through automated testing equipment. The voltage across the diode or/and the current flowing through the diode in the ESD protection circuit is then determined based on the corresponding relationship between the voltage or/and current and the voltage or/and current of the diode of the target chip and the temperature. Since the target chip The chip meets the stabilization time in the test environment, so the target chip and the test environment have reached thermal equilibrium or have a high probability of reaching thermal equilibrium. At this time, the temperature of the test chip is likely to be in a stable state. The temperature of the target chip measured by ATE is the stability of the target chip. The real temperature can be used to determine whether the target chip reaches the ambient temperature of the test environment, thereby improving the accuracy of the temperature test of the target chip. By accurately determining the test temperature of the target chip, the test performance of the target chip can be improved. ATE only needs to test the target chip when the time of the target chip in the test environment is greater than or equal to the stable time, which reduces the number of tests and improves the efficiency of testing.
进一步地,目标芯片的二极管的电压和\或电流与目标芯片的温度之间的关系可为线性关系,即一个电流或电压对应一个温度,也可为一对多的关系,例如一个温度至对应一个电流范围或电压范围、电流范围。如此,ATE测试目标芯片的ESD保护电路中的二极管的电压在电压范围或电流在电流范围,则确定目标芯片达到测试温度。Furthermore, the relationship between the voltage and/or current of the diode of the target chip and the temperature of the target chip can be a linear relationship, that is, one current or voltage corresponds to one temperature, or it can also be a one-to-many relationship, for example, one temperature to corresponding A current range or voltage range, current range. In this way, if the voltage of the diode in the ESD protection circuit of the ATE test target chip is within the voltage range or the current is within the current range, it is determined that the target chip has reached the test temperature.
在上述第一方面的一种可能的实现中,所述PMU获取的所述电流和/或所述电压为模拟量。其中,相较于数字量,模拟量更能准确体现二极管的电流值或电压值,PMU采用模拟量的电流或电压作为处理对象,可提升数据的准确性。In a possible implementation of the above first aspect, the current and/or the voltage obtained by the PMU are analog quantities. Among them, compared to digital quantities, analog quantities can more accurately reflect the current value or voltage value of the diode. The PMU uses the analog quantity current or voltage as the processing object, which can improve the accuracy of the data.
在上述第一方面的一种可能的实现中,所述芯片温度测试方法还包括:确定所述对应关系,所述确定所述对应关系包括:所述PMU获取多个同类芯片的校准测试数据,并将所述校准测试数据向所述DSP芯片发送,其中,所述校准测试数据包括:目标芯片的ESD保护电路的二极管接收的激励电压、所述目标芯片的多个温度及每个所述温度对应的流过所述二极管的电流,或所述目标芯片的ESD保护电路的二极管接收的激励电流、所述目标芯片的多个温度及每个所述温度对应的所述二极管两端的电压;所述DSP芯片接收所述校准测试数据,依据理想状态下的温度与电压或电流的对应关系确定所述校准测试数据中的目标数据,并依据所述目标数据确定所述目标芯片的温度与电压或电流的对应关系。In a possible implementation of the above first aspect, the chip temperature testing method further includes: determining the corresponding relationship, and determining the corresponding relationship includes: the PMU obtains calibration test data of multiple similar chips, And send the calibration test data to the DSP chip, where the calibration test data includes: the excitation voltage received by the diode of the ESD protection circuit of the target chip, multiple temperatures of the target chip, and each temperature The corresponding current flowing through the diode, or the excitation current received by the diode of the ESD protection circuit of the target chip, multiple temperatures of the target chip, and the voltage across the diode corresponding to each temperature; The DSP chip receives the calibration test data, determines the target data in the calibration test data based on the corresponding relationship between temperature and voltage or current under ideal conditions, and determines the temperature and voltage or current of the target chip based on the target data. Correspondence of current.
采用上述技术方案,在进行温度测试之前,通过多次测量获取多个目标芯片的同类芯片的多个测试数据,通过理想状态下的温度与电压或电流的对应关系校准多个测试数据,以缩减测试数据的范围,提升测试数据的精度,通过测量多个同类芯片,以减少不同芯片之间的工艺偏差,提升对应关系的适用范围。Using the above technical solution, before conducting the temperature test, multiple test data of similar chips of multiple target chips are obtained through multiple measurements, and the multiple test data are calibrated through the corresponding relationship between temperature and voltage or current under ideal conditions to reduce the cost. The scope of test data improves the accuracy of test data. By measuring multiple similar chips, it reduces the process deviation between different chips and improves the applicable scope of the corresponding relationship.
在上述第一方面的一种可能的实现中,所述测试环境包括环境温度,所述芯片温度测试方法还包括:确定所述稳定时间,所述确定所述稳定时间的确定方法包括:所述PMU获取测试环境的同类芯片的稳定测试数据,并将所述稳定测试数据向所述DSP芯片发送,其中,所述测试环境包括环境温度,所述稳定测试数据包括环境温度下,所述同类芯片在多个测试时间点对应的电参数;所述DSP芯片接收所述稳定测试数据,依据所述稳定测试数据确定所述稳定时间。In a possible implementation of the above first aspect, the test environment includes ambient temperature, the chip temperature testing method further includes: determining the stabilization time, and the determining method of determining the stabilization time includes: The PMU obtains stable test data of similar chips in the test environment, and sends the stable test data to the DSP chip, where the test environment includes ambient temperature, and the stable test data includes the stable test data of the similar chips under ambient temperature. Corresponding electrical parameters at multiple test time points; the DSP chip receives the stable test data and determines the stable time based on the stable test data.
采用上述技术方案,通过在多个测试时间点测试同类芯片,若多个连续的时间点对应的电流或电压均相等,则确定此时同类芯片与测试环境达到热平衡,可依据电压或电流相等的多个连续时间点确定稳定时间。进一步地,还可以依据多个连续的时间点对应的电流或电压均相等,确定多个连续时间点对应的同类芯片的温度相同,依据温度相等的多个连续时间确 定目标芯片的稳定时间,通过在多个时间点测量同类芯片,以减少不同芯片之间的工艺偏差,提升稳定时间的适用范围。Using the above technical solution, by testing similar chips at multiple test time points, if the currents or voltages corresponding to multiple consecutive time points are equal, it is determined that the similar chips and the test environment have reached thermal equilibrium at this time, and the voltage or current can be determined based on the equal voltage or current. Multiple consecutive time points determine stabilization time. Furthermore, it can also be determined that the temperatures of similar chips corresponding to multiple consecutive time points are the same based on the currents or voltages corresponding to multiple consecutive time points being equal. The stabilization time of the target chip is determined by measuring similar chips at multiple time points to reduce process deviations between different chips and improve the applicable scope of the stabilization time.
在上述第一方面的一种可能的实现中,所述PMU获取所述目标芯片的ESD保护电路的二极管两端的电压和/或流过所述二极管的电流包括:所述PMU向所述目标芯片的ESD保护电路的二极管施加激励电压,得到流过所述二极管的电流,或所述PMU向所述目标芯片的ESD保护电路的二极管施加激励电流,得到所述二极管两端的电压。In a possible implementation of the above first aspect, the PMU obtaining the voltage across the diode of the ESD protection circuit of the target chip and/or the current flowing through the diode includes: the PMU transmitting the voltage to the target chip. The PMU applies an excitation voltage to the diode of the ESD protection circuit of the target chip to obtain the current flowing through the diode, or the PMU applies an excitation current to the diode of the ESD protection circuit of the target chip to obtain the voltage across the diode.
采用上述技术方案,可通过PMU向目标芯片的ESD保护电路的二极管施加激励电流或激励电压,得到接受激励后的二极管的电流或电压。Using the above technical solution, the excitation current or voltage can be applied to the diode of the ESD protection circuit of the target chip through the PMU, and the current or voltage of the diode after receiving the excitation can be obtained.
在上述第一方面的一种可能的实现中,所述芯片温度测试方法还包括:若所述目标芯片的当前温度与测试环境的环境温度不同,则所述PMU依据多个预设测试时间点对所述目标芯片进行测试,以得到所述目标芯片的ESD保护电路的二极管的电流或电压,并将所述电流或电压向所述DSP芯片发送;所述DSP芯片依据所述电流或电压及所述对应关系确定所述目标芯片的温度,并依据所述目标芯片的温度与所述环境温度相同的预设测试时间点更新所述稳定时间。In a possible implementation of the first aspect above, the chip temperature testing method further includes: if the current temperature of the target chip is different from the ambient temperature of the test environment, the PMU determines the temperature according to multiple preset test time points. The target chip is tested to obtain the current or voltage of the diode of the ESD protection circuit of the target chip, and the current or voltage is sent to the DSP chip; the DSP chip relies on the current or voltage and The corresponding relationship determines the temperature of the target chip, and updates the stabilization time according to a preset test time point when the temperature of the target chip is the same as the ambient temperature.
采用上述技术方案,在目标芯片满足稳定时间时的当前温度与环境温度不同,则依据预设测试时间点对目标芯片再次进行测试,以得到目标芯片的温度,并依据与测试环境的环境温度相同的目标芯片的温度对应的时间点更新稳定时间,以保证稳定时间的准确度。Using the above technical solution, when the current temperature of the target chip meets the stabilization time and the ambient temperature is different, the target chip is tested again according to the preset test time point to obtain the temperature of the target chip, and the temperature of the target chip is the same as the ambient temperature of the test environment. The stabilization time is updated at the time point corresponding to the temperature of the target chip to ensure the accuracy of the stabilization time.
在上述第一方面的一种可能的实现中,所述ATE还包括测试模块,所述芯片温度测试方法还包括:若所述目标芯片的温度与所述测试环境的环境温度相等,则所述测试模块对所述目标芯片上电,进行性能或可靠性的测试。In a possible implementation of the above first aspect, the ATE further includes a test module, and the chip temperature testing method further includes: if the temperature of the target chip is equal to the ambient temperature of the test environment, then the The test module powers on the target chip and performs performance or reliability testing.
采用上述方案,在目标芯片在测试环境中的时间大于或等于稳定时间且测试获得的目标芯片的当前温度与测试环境的温度相同时,确定待测试芯片的温度与测试环境达到热平衡,即待测试芯片的稳定的真实温度达到进行其他测试所要求的温度,则可对目标芯片进行上电,以进行目标芯片的性能、可靠性等方面的测试。Using the above scheme, when the time of the target chip in the test environment is greater than or equal to the stable time and the current temperature of the target chip obtained by the test is the same as the temperature of the test environment, it is determined that the temperature of the chip to be tested and the test environment have reached thermal equilibrium, that is, the temperature to be tested is When the stable real temperature of the chip reaches the temperature required for other tests, the target chip can be powered on to test the performance, reliability, etc. of the target chip.
第二方面,提供一种自动化测试设备,所述自动化测试设备包括参数测量单元PMU和数字信号处理DSP芯片;若目标芯片在测试环境中的时间满足稳定时间,所述PMU用于获取所述目标芯片的ESD保护电路的二极管的电参数,并将所述电参数向所述DSP芯片发送,其中,所述目标芯片处于未上电状态,所述稳定时间为所述目标芯片的温度与所述测试环境的温度达到相同所需的时间;所述DSP芯片用于接收所述电参数,并依据所述电参数和对应关系确定所述目标芯片的温度,所述对应关系描述了所述目标芯片同类芯片的电参数随温度的变化关系。In a second aspect, an automated test equipment is provided. The automated test equipment includes a parameter measurement unit PMU and a digital signal processing DSP chip; if the time of the target chip in the test environment meets the stabilization time, the PMU is used to obtain the target The electrical parameters of the diode of the ESD protection circuit of the chip are sent to the DSP chip, where the target chip is in an unpowered state, and the stabilization time is the time between the temperature of the target chip and the The time required for the temperature of the test environment to reach the same level; the DSP chip is used to receive the electrical parameters and determine the temperature of the target chip based on the electrical parameters and the corresponding relationship, the corresponding relationship describes the target chip The relationship between the electrical parameters of similar chips as a function of temperature.
在上述第二方面的一种可能的实现中,所述PMU获取的所述电参数为模拟量。In a possible implementation of the above second aspect, the electrical parameters obtained by the PMU are analog quantities.
在上述第二方面的一种可能的实现中,所述PMU还用于获取多个同类芯片的校准测试数据,并将所述校准测试数据向所述DSP芯片发送,其中,所述校准测试数据包括同类芯片的ESD保护电路的二极管接收的激励电压、所述目标芯片的多个温度及每个温度对应的流过所述二极管的电流,或所述目标芯片的ESD保护电路的二极管接收的激励电流、所述同类芯片的多个温度及每个温度对应的所述二极管两端的电压;所述DSP芯片还用于接收所述校准测试数据,依据理想状态下的温度与电压或电流的对应关系确定所述测试数据中的目标数据;并依据所述目标数据确定所述同类芯片的温度与电压或电流的对应关系。其中,同类芯片为与目标芯片规格、制作工艺等相同的芯片。 In a possible implementation of the second aspect above, the PMU is also used to obtain calibration test data of multiple similar chips, and send the calibration test data to the DSP chip, where the calibration test data Including the excitation voltage received by the diode of the ESD protection circuit of the same chip, the multiple temperatures of the target chip and the current flowing through the diode corresponding to each temperature, or the excitation received by the diode of the ESD protection circuit of the target chip. Current, multiple temperatures of the same type of chip and the voltage across the diode corresponding to each temperature; the DSP chip is also used to receive the calibration test data, based on the corresponding relationship between temperature and voltage or current under ideal conditions Determine the target data in the test data; and determine the corresponding relationship between the temperature and voltage or current of the similar chip based on the target data. Among them, similar chips are chips with the same specifications and manufacturing process as the target chip.
在上述第二方面的一种可能的实现中,所述PMU还用于获取测试环境的同类芯片的稳定测试数据,并将所述稳定测试数据向所述DSP芯片发送,其中,所述测试环境包括环境温度,所述测试数据包括环境温度下,所述同类芯片在多个测试时间点对应的电流或电压;所述DSP芯片还用于接收所述稳定测试数据并依据所述稳定测试数据确定所述稳定时间。In a possible implementation of the above second aspect, the PMU is also used to obtain stable test data of similar chips in the test environment, and send the stable test data to the DSP chip, wherein the test environment Including the ambient temperature, the test data includes the current or voltage corresponding to the similar chip at multiple test time points under the ambient temperature; the DSP chip is also used to receive the stable test data and determine based on the stable test data the stabilization time.
在上述第二方面的一种可能的实现中,所述PMU进一步用于向所述目标芯片的ESD保护电路的二极管施加激励电压,得到流过所述二极管的电流,或所述PMU进一步用于向所述目标芯片的ESD保护电路的二极管施加激励电流,得到所述二极管两端的电压。In a possible implementation of the second aspect above, the PMU is further used to apply an excitation voltage to a diode of the ESD protection circuit of the target chip to obtain a current flowing through the diode, or the PMU is further used to Apply an excitation current to the diode of the ESD protection circuit of the target chip to obtain the voltage across the diode.
在上述第二方面的一种可能的实现中,若所述目标芯片的温度与测试环境的环境温度不同,则所述PMU还用于依据多个预设测试时间点对目标芯片进行测试,以得到所述目标芯片的ESD保护电路的二极管的电参数,并将所述电参数向所述DSP芯片发送;所述DSP还用于模块依据所述电参数及所述对应关系确定所述目标芯片的温度,并依据所述目标芯片的温度与所述温度相同的预设测试时间点更新所述稳定时间。In a possible implementation of the second aspect above, if the temperature of the target chip is different from the ambient temperature of the test environment, the PMU is also used to test the target chip according to multiple preset test time points, so as to Obtain the electrical parameters of the diode of the ESD protection circuit of the target chip, and send the electrical parameters to the DSP chip; the DSP is also used by the module to determine the target chip based on the electrical parameters and the corresponding relationship. temperature, and update the stabilization time according to a preset test time point when the temperature of the target chip is the same as the temperature.
在上述第二方面的一种可能的实现中,所述ATE还包括测试模块,若所述目标芯片的温度与所述测试环境的环境温度相等,则所述测试模块对所述目标芯片上电,进行性能或可靠性的测试。In a possible implementation of the above second aspect, the ATE further includes a test module. If the temperature of the target chip is equal to the ambient temperature of the test environment, the test module powers on the target chip. , perform performance or reliability testing.
第三方面,本申请实施例提供一种自动化测试设备,包括:一个或多个处理器参数测量单元PMU;数字信号处理DSP芯片;存储器,用于存储一个或多个程序;当所述一个或多个程序被所述PMU或所述DSP芯片执行,使得所述PMU实现如第一方面所述的芯片温度测试方法中所述PMU所执行的操作,所述DSP芯片实现如第一方面任一项所述的芯片温度测试方法中所述DSP芯片所执行的操作。In a third aspect, embodiments of the present application provide an automated test equipment, including: one or more processor parameter measurement units PMU; a digital signal processing DSP chip; a memory for storing one or more programs; when the one or A plurality of programs are executed by the PMU or the DSP chip, so that the PMU implements the operations performed by the PMU in the chip temperature testing method described in the first aspect, and the DSP chip implements any of the operations described in the first aspect. The operations performed by the DSP chip in the chip temperature testing method described in the item.
第四方面,本申请实施例提供一种计算机可读存储介质,其上存储有计算机程序,所述程序被处理器执行时实现如第一方面中任一项所述的芯片温度测试方法。In a fourth aspect, embodiments of the present application provide a computer-readable storage medium on which a computer program is stored. When the program is executed by a processor, the chip temperature testing method as described in any one of the first aspects is implemented.
应当理解地,第二方面至第四方面中任一种设计所带来的技术效果可参考上文所提供的对应的方法中的有益效果,此处不再赘述。It should be understood that the technical effects brought by any design in the second to fourth aspects can refer to the beneficial effects in the corresponding methods provided above, and will not be described again here.
附图说明Description of drawings
图1为本申请实施例提供的一种ATE的模块示意图。Figure 1 is a schematic module diagram of an ATE provided by an embodiment of the present application.
图2为本申请实施例提供一种理想状态下的二极管两端的电压与温度的关系曲线的示意图。FIG. 2 is a schematic diagram of a relationship curve between the voltage across a diode and temperature under an ideal state according to an embodiment of the present application.
图3为本申请实施例提供一种实际场景下的二极管两端的电压与温度的关系曲线的示意图。FIG. 3 is a schematic diagram illustrating the relationship between the voltage across a diode and the temperature in an actual scenario according to an embodiment of the present application.
图4为本申请实施例提供的对应关系的确定方法的流程示意图。FIG. 4 is a schematic flowchart of a method for determining a correspondence relationship provided by an embodiment of the present application.
图5为本申请实施例提供的稳定时间的确定方法的流程示意图。FIG. 5 is a schematic flowchart of a method for determining the stabilization time provided by an embodiment of the present application.
图6为本申请实施例提供的芯片温度测试方法的流程示意图。FIG. 6 is a schematic flowchart of a chip temperature testing method provided by an embodiment of the present application.
图7为本申请实施例提供一种ATE测试目标芯片的示意图。FIG. 7 is a schematic diagram of an ATE test target chip according to an embodiment of the present application.
图8为本申请实施例的自动化测试设备的硬件示意图。Figure 8 is a hardware schematic diagram of automated testing equipment according to an embodiment of the present application.
具体实施方式Detailed ways
以下,在本申请实施例的描述中,“示例性的”或者“例如”等词用于标识作例子、例证或说明。本申请实施例中被描述为“示例性的”或者“例如”的任何实施例或设计方案不应被解释 为比其它实施例或设计方案更优选或更具优势。确切而言,使用“示例性的”或者“例如”等词旨在以具体方式呈现相关概念。Hereinafter, in the description of the embodiments of the present application, words such as “exemplary” or “for example” are used to identify examples, illustrations or illustrations. Any embodiment or design described as "exemplary" or "such as" in the embodiments of this application shall not be interpreted as To be more preferred or advantageous than other embodiments or designs. Rather, use of the words "exemplary" or "such as" is intended to present the concept in a concrete manner.
除非另有定义,本文所使用的所有的技术和科学术语与属于本申请中的技术领域的技术人员通常理解的含义相同。本申请的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本申请。应理解,本申请中除非另有说明,“多个”是指两个或多于两个,“和/或”包括关联的所列项目中的一个或多个的任何和所有组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terms used in the description of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. It will be understood that in this application, unless otherwise stated, "plurality" means two or more than two, and "and/or" includes any and all combinations of one or more of the associated listed items.
首先,介绍本申请实施例所涉及的技术术语:First, the technical terms involved in the embodiments of this application are introduced:
1、热平衡(thermal equilibrium)1. Thermal equilibrium
热平衡指同外界接触的物体(例如目标芯片),其内部温度各处均匀且等于外界温度的状况。在热平衡时,物体各部分以及物体同外界之间都没有热量交换。Thermal balance refers to the situation where the internal temperature of an object in contact with the outside world (such as a target chip) is uniform everywhere and equals the outside temperature. In thermal equilibrium, there is no heat exchange between various parts of the object and between the object and the outside world.
2、模拟量(analog quantity)2. Analog quantity
模拟量是指变量(例如电压、电流)在一定范围连续变化的量;也就是在一定范围(定义域)内可以取任意值(在值域内)。例如模拟电流值、模拟电压值。Analog quantity refers to a quantity in which a variable (such as voltage, current) changes continuously within a certain range; that is, it can take any value (within the value domain) within a certain range (definition domain). For example, analog current value, analog voltage value.
数字量是分立量,而不是连续变化量,只能取几个分立值,如二进制数字变量只能取两个值。例如数字电流值、数字电压值。Digital quantities are discrete quantities, not continuously changing quantities. They can only take on a few discrete values. For example, a binary digital variable can only take on two values. For example, digital current value, digital voltage value.
为了获取芯片的性能,常常需要对芯片进行性能测试,例如对芯片进行高低温测试,以获取芯片在高温环境和低温环境下的性能。在高低温测试过程中,需要保证芯片处于特定的测试温度中。但是现有获取目标芯片的温度的方法无法保证待测芯片与其环境达成热平衡,导致无法精确确定待测芯片的真实温度。In order to obtain the performance of the chip, it is often necessary to perform performance testing on the chip, such as high and low temperature testing of the chip to obtain the performance of the chip in high and low temperature environments. During the high and low temperature testing process, it is necessary to ensure that the chip is at a specific testing temperature. However, existing methods of obtaining the temperature of the target chip cannot ensure that the chip under test reaches thermal equilibrium with its environment, resulting in the inability to accurately determine the true temperature of the chip under test.
基于上述问题,本申请提供一种芯片温度测试方法。其中,目标芯片具有静电释放(Electro-Static discharge,ESD)保护电路,ESD保护电路具有二极管。当目标芯片在测试环境中满足稳定时间(soaking time)时,通过自动化测试设备(Automatic test equipment,ATE)获取目标芯片的ESD保护电路中的二极管两端的电压或/和流过二极管的电流,然后依据电压或/和电流及目标芯片的二极管的电压或/和电流与温度的对应关系确定目标芯片的温度。Based on the above problems, this application provides a chip temperature testing method. Among them, the target chip has an electrostatic discharge (Electro-Static discharge, ESD) protection circuit, and the ESD protection circuit has a diode. When the target chip meets the stabilizing time (soaking time) in the test environment, the voltage across the diode or/and the current flowing through the diode in the ESD protection circuit of the target chip is obtained through automated test equipment (ATE), and then The temperature of the target chip is determined based on the corresponding relationship between the voltage or/and current and the voltage or/and current of the diode of the target chip and the temperature.
可以理解,稳定时间(soaking time),又称均热时间,稳定时间为测试样品(Device under test,DUT)的真实温度与其测试环境达到热平衡所需的时间,稳定时间可为一个时间段,例如45秒~60秒,稳定时间也可为时间点,例如50秒。It can be understood that the stabilizing time (soaking time), also known as the soaking time, is the time required for the real temperature of the test sample (Device under test, DUT) to reach thermal equilibrium with its test environment. The stabilizing time can be a time period, such as 45 seconds to 60 seconds. The stabilization time can also be a time point, such as 50 seconds.
可以理解,测试环境的温度不同,测试样品(例如目标芯片)的稳定时间不一样,例如若环境温度为60°,测试样品的稳定时间为1分钟,即将测试样品放置于60°的测试环境中,测试样品与测试环境达到热平衡的时间为1分钟;若环境温度为80°,则测试样品的稳定时间为1分钟20秒。It can be understood that the temperature of the test environment is different, and the stability time of the test sample (such as the target chip) is different. For example, if the ambient temperature is 60°, the stability time of the test sample is 1 minute, that is, the test sample is placed in a 60° test environment. , the time for the test sample and the test environment to reach thermal equilibrium is 1 minute; if the ambient temperature is 80°, the stabilization time of the test sample is 1 minute and 20 seconds.
可以理解,由于目标芯片在测试环境中满足稳定时间,因此目标芯片与测试环境达到热平衡,此时测试芯片的温度处于稳定状态,ATE测量的目标芯片的温度为目标芯片的稳定的真实温度,可依据该温度确定目标芯片是否达到测试温度。通过精确确定目标芯片的测试温度,可提升目标芯片的测试性能。其中,测试温度可为测试环境的环境温度。It can be understood that since the target chip meets the stabilization time in the test environment, the target chip and the test environment reach thermal equilibrium. At this time, the temperature of the test chip is in a stable state. The temperature of the target chip measured by ATE is the stable real temperature of the target chip. Based on this temperature, determine whether the target chip reaches the test temperature. By accurately determining the test temperature of the target chip, the test performance of the target chip can be improved. Wherein, the test temperature may be the ambient temperature of the test environment.
请参见图1,图1为本申请实施例提供的一种ATE的模块示意图,ATE包括参数测量单元(power management unit,PMU)和数字信号处理(digital signal processing,DSP)芯片。 Please refer to Figure 1. Figure 1 is a schematic module diagram of an ATE provided by an embodiment of the present application. The ATE includes a parameter measurement unit (power management unit, PMU) and a digital signal processing (digital signal processing, DSP) chip.
其中,当目标芯片处于未上电状态且在预设的测试环境中的时间满足的稳定时间时,PMU用于对目标芯片进行测试。例如PMU可对目标芯片的ESD保护电路的二极管进行加压测流,也可以对二极管进行加流测压,以获得二极管电参数,然后将电参数向DSP芯片发送。其中,电参数可为电压和\或电流。Among them, when the target chip is in an unpowered state and the time in the preset test environment meets the stabilization time, the PMU is used to test the target chip. For example, the PMU can perform voltage and current measurement on the diode of the ESD protection circuit of the target chip, or it can also perform current and voltage measurement on the diode to obtain the electrical parameters of the diode, and then send the electrical parameters to the DSP chip. Among them, the electrical parameters can be voltage and/or current.
DSP芯片用于接收PMU发送的电压或电流,并依据接收到的电压或电流及对应关系确定目标芯片的真实温度。其中,对应关系是目标芯片的ESD保护电路的二极管的电压或电流与电压或电流对应的温度的之间的关系。The DSP chip is used to receive the voltage or current sent by the PMU, and determine the true temperature of the target chip based on the received voltage or current and the corresponding relationship. The corresponding relationship is the relationship between the voltage or current of the diode of the ESD protection circuit of the target chip and the temperature corresponding to the voltage or current.
如此,本申请的测试方法通过图1所示的ATE的PMU和DSP芯片即可实现对目标芯片温度的测试,相较于现有的ATE通过热电偶测试目标芯片的温度,简化了ATE的结构,节省了成本。In this way, the test method of this application can realize the test of the target chip temperature through the PMU and DSP chips of the ATE shown in Figure 1. Compared with the existing ATE that tests the temperature of the target chip through thermocouples, the structure of the ATE is simplified. , saving costs.
可以理解,图1中的ATE仅为ATE的一种示例,而非限定,ATE可有比图1所示的更多或更少的模块。示例的,在其他实施例中,ATE还包括数控电源板和时钟生成模块,数控电源板用于为ATE提供电源,时钟生成模块用于为ATE的各个模块提供时钟信号。又示例的,在一些实施例中,ATE还包括引脚电子(Pin Electronics,PE)器件,PMU及DSP芯片位于引脚电子器件中。It can be understood that the ATE in Figure 1 is only an example of the ATE and is not a limitation. The ATE may have more or fewer modules than those shown in Figure 1 . By way of example, in other embodiments, the ATE also includes a numerically controlled power board and a clock generation module. The numerically controlled power board is used to provide power for the ATE, and the clock generation module is used to provide clock signals for each module of the ATE. As another example, in some embodiments, the ATE also includes a Pin Electronics (PE) device, and the PMU and DSP chips are located in the Pin Electronics device.
DSP芯片可以是ASIC芯片、FPGA、SoC、或者CPU。其中,若DSP芯片是FPGA,当ATE测试待测芯片的温度时,CPU模块向FPGA发送指令序列,FPGA接收指令序列并依据约定的通信协议驱动引脚电子器件,以使引脚电子器件中的PMU模块对目标芯片进行测试和数据采集,例如PMU向目标芯片的ESD保护电路的二极管施加激励电流,得到二极管两端的电压。然后PMU将采集的数据向FPGA的DSP芯片发送。DSP芯片依据该采集的数据确定目标芯片的温度。The DSP chip can be an ASIC chip, FPGA, SoC, or CPU. Among them, if the DSP chip is an FPGA, when ATE tests the temperature of the chip under test, the CPU module sends an instruction sequence to the FPGA, and the FPGA receives the instruction sequence and drives the pin electronic device according to the agreed communication protocol, so that the pin electronic device The PMU module tests and collects data on the target chip. For example, the PMU applies an excitation current to the diode of the ESD protection circuit of the target chip to obtain the voltage across the diode. Then the PMU sends the collected data to the DSP chip of the FPGA. The DSP chip determines the temperature of the target chip based on the collected data.
在一些实施例中,PMU为数模转换器(Digital to Analog Converter,DAC)电路模块,用于提供直流测试通道,进行目标芯片的测试信号的采集,例如采集目标芯片的ESD保护电路中的二极管的电压或/和电流。In some embodiments, the PMU is a Digital to Analog Converter (DAC) circuit module, used to provide a DC test channel to collect test signals of the target chip, such as collecting diodes in the ESD protection circuit of the target chip. voltage or/and current.
可以理解,二极管具有如下特性:随着温度的升高,二极管的结电阻变小,本申请实施例提出的芯片温度测试方法是基于二极管这一特性实现的。如此,当二极管处于不同的温度,向二极管施加不同的激励电流,二极管两端的电压不同。在理想状态下,二极管接收的激励电流与二极管两端的电压呈线性关系;同样的,当二极管处于不同的温度,向二极管施加不同的电压,流过二极管的电流不同,且二极管接收的激励电压与二极管的电流呈线性关系。请参见图2,图2是理想状态下二极管两端的电压与温度的关系曲线,图2中包括两条关系曲线,两条关系曲线中,PMU向二极管施加的激励电流分别为100μA和1500μA,由图2可知,在二极管接受的激励电流固定时,每个二极管两端的电压对应一个温度值,即二极管的两端的电压对二极管的温度成线性关系,因此,当ATE的DSP芯片接收PMU发送的电压,可以依据图5中关系曲线中电压与温度的对应关系确定该电压对应的芯片的温度。It can be understood that diodes have the following characteristics: as the temperature increases, the junction resistance of the diode becomes smaller. The chip temperature testing method proposed in the embodiment of this application is implemented based on this characteristic of the diode. In this way, when the diode is at different temperatures and different excitation currents are applied to the diode, the voltages across the diode are different. Under ideal conditions, the excitation current received by the diode has a linear relationship with the voltage across the diode; similarly, when the diode is at different temperatures and different voltages are applied to the diode, the current flowing through the diode is different, and the excitation voltage received by the diode is different from the voltage across the diode. The diode current has a linear relationship. Please refer to Figure 2. Figure 2 is the relationship curve between the voltage across the diode and the temperature under ideal conditions. Figure 2 includes two relationship curves. In the two relationship curves, the excitation currents applied by the PMU to the diode are 100μA and 1500μA respectively. As shown in Figure 2, when the excitation current received by the diode is fixed, the voltage across each diode corresponds to a temperature value, that is, the voltage at both ends of the diode has a linear relationship with the temperature of the diode. Therefore, when the ATE DSP chip receives the voltage sent by the PMU , the temperature of the chip corresponding to the voltage can be determined based on the corresponding relationship between voltage and temperature in the relationship curve in Figure 5.
可以理解,不同的芯片的制作工艺或器件种类不同,导致不同芯片中的二极管的特性不同。因此,在接收相同的电压或激励电流时,不同目标芯片中的二极管两端的电压或电流与温度的关系也不同。因此,在对目标芯片进行温度测试之前,可通过ATE对目标芯片的同类芯片进行测试,以确定同类芯片的二极管的电压或电流与温度之间的对应关系,通过该对应 关系描述与目标芯片同类芯片的电参数随温度的变化关系。It can be understood that different chips have different manufacturing processes or different device types, resulting in different characteristics of diodes in different chips. Therefore, the relationship between voltage or current and temperature across diodes in different target chips will be different when receiving the same voltage or excitation current. Therefore, before conducting a temperature test on the target chip, similar chips of the target chip can be tested through ATE to determine the correspondence between the voltage or current of the diodes of the same chip and the temperature. Through this correspondence The relationship describes the relationship between the electrical parameters of chips of the same type as the target chip as the temperature changes.
为了保证与目标芯片的同类芯片的ESD保护电路的二极管两端的电压或电流与温度的关系的准确性,可由ATE对一个或多个同类芯片进行多次测试,以得到多个校准测试数据,依据理想状态下的关系曲线确定校准测试数据中的目标数据,并依据目标数据确定目标芯片的同类芯片的ESD保护电路的二极管两端的电压与温度的对应关系。示例的,请参见图3,图3为实际场景下的目标芯片的同类芯片的二极管的电压与温度的关系曲线,图3中包括两条关系曲线,两条关系曲线中,PMU向二极管施加的激励电流分别为100μA和1500μA。由图3可知,在二极管接收的激励电流固定时,目标芯片的同类芯片的每个温度对应一个电压范围,例如,当激励电流为100μA,二极管两端的电压范围为0.41V~0.43V时,目标芯片的温度的为60°,如此,当预设温度为60°时,当ATE测量获得的目标芯片的二极管两端的电压的范围为0.41V~0.43V时,则可确定目标芯片的同类芯片达到预设温度60°。In order to ensure the accuracy of the relationship between the voltage or current and temperature across the diode of the ESD protection circuit of the same chip as the target chip, ATE can conduct multiple tests on one or more similar chips to obtain multiple calibration test data, based on The relationship curve under the ideal state determines the target data in the calibration test data, and based on the target data, the corresponding relationship between the voltage and temperature at both ends of the diode of the ESD protection circuit of the similar chip of the target chip is determined. For an example, please refer to Figure 3. Figure 3 is the relationship curve between the voltage and temperature of the diode of the similar chip of the target chip in the actual scenario. Figure 3 includes two relationship curves. In the two relationship curves, the PMU applies to the diode The excitation currents are 100μA and 1500μA respectively. It can be seen from Figure 3 that when the excitation current received by the diode is fixed, each temperature of the similar chip of the target chip corresponds to a voltage range. For example, when the excitation current is 100μA and the voltage range across the diode is 0.41V~0.43V, the target The temperature of the chip is 60°. In this way, when the preset temperature is 60°, when the voltage across the diode of the target chip obtained by ATE measurement ranges from 0.41V to 0.43V, it can be determined that similar chips of the target chip reach Preset temperature is 60°.
因此,在ATE对目标芯片进行温度测试时,可通过PMU获取目标芯片的ESD保护电路的二极管的电参数,并依据电参数和图3中目标芯片的同类芯片的对应关系确定目标芯片的温度。Therefore, when ATE performs a temperature test on the target chip, the electrical parameters of the diode of the ESD protection circuit of the target chip can be obtained through the PMU, and the temperature of the target chip can be determined based on the corresponding relationship between the electrical parameters and similar chips of the target chip in Figure 3.
请参见图4,为本申请实施例提供的一种目标芯片的同类芯片的对应关系的确定方法,该确定方法包括以下步骤:Please refer to Figure 4, which is a method for determining the correspondence relationship between a target chip and similar chips provided by an embodiment of the present application. The determination method includes the following steps:
S401、PMU获取多个同类芯片的校准测试数据,并将校准测试数据向DSP芯片发送。S401. PMU obtains the calibration test data of multiple similar chips and sends the calibration test data to the DSP chip.
其中,校准测试数据包括目标芯片的同类芯片的ESD保护电路的二极管接收的激励电压、同类芯片的多个温度及每个温度对应的流过二极管的电流,或,同类芯片的ESD保护电路的二极管接收的激励电流、同类芯片的多个温度及每个温度对应的二极管两端的电压。Among them, the calibration test data includes the excitation voltage received by the diode of the ESD protection circuit of the same chip of the target chip, multiple temperatures of the same chip and the current flowing through the diode corresponding to each temperature, or the diodes of the ESD protection circuit of the same chip. The received excitation current, multiple temperatures of similar chips and the voltage across the diode corresponding to each temperature.
其中,目标芯片的同类芯片之间是被认为大概率上拥有相同稳定时间的芯片。例如:当目标芯片与某一批芯片的封装具有相近似的规格参数,那么就认为这个目标芯片是这一批芯片的同类芯片;或者,当目标芯片与某一批芯片的封装具有相同规格参数,那么就认为这个目标芯片是这一批芯片的同类芯片;或者,当目标芯片与某一批芯片的封装具有相同规格参数并且厂家相同,则认为这个目标芯片与这一批芯片是同类芯片;或者,当目标芯片与某一批芯片的封装具有相同规格参数并且厂家相同并且出厂日期在同一个时间段内,则认为这个目标芯片与这一批芯片是同类芯片。Among them, chips of the same type as the target chip are considered to have the same stabilization time with a high probability. For example: when the target chip and the package of a certain batch of chips have similar specifications and parameters, then the target chip is considered to be a similar chip of this batch of chips; or when the target chip and the package of a certain batch of chips have the same specifications and parameters , then the target chip is considered to be the same type of chips in this batch of chips; or, when the package of the target chip and a certain batch of chips have the same specifications and parameters and the manufacturer is the same, then the target chip is considered to be the same kind of chips as this batch of chips; Or, when the package of the target chip and a certain batch of chips have the same specifications and parameters, are made by the same manufacturer, and are manufactured in the same time period, the target chip and this batch of chips are considered to be of the same type.
可为多个与目标芯片同规格的芯片,还可为单个与目标芯片同规格的芯片,例如,可将单个同类芯片的多个ESD保护电路的二极管进行多次测量。It can be multiple chips with the same specifications as the target chip, or it can be a single chip with the same specifications as the target chip. For example, the diodes of multiple ESD protection circuits of a single similar chip can be measured multiple times.
S402、DSP芯片接收PMU发送的校准测试数据,并依据理想状态下电压或电流与温度的对应关系确定校准测试数据中的目标数据。S402. The DSP chip receives the calibration test data sent by the PMU, and determines the target data in the calibration test data based on the corresponding relationship between voltage or current and temperature under ideal conditions.
其中,如图2所示,理想状态下的电压或电流与温度呈线性关系。Among them, as shown in Figure 2, the voltage or current under ideal conditions has a linear relationship with temperature.
具体地,DSP芯片确定校准测试数据是否符合理想状态下的电压或电流与温度的对应关系,若校准测试数据符合理想状态下的电压或电流与温度的对应关系,则将该校准测试数据确定为目标数据;若该校准测数据不符合理想状态下的电压或电流与温度的对应关系,则丢弃或忽略该测量数据。Specifically, the DSP chip determines whether the calibration test data conforms to the corresponding relationship between voltage or current and temperature under the ideal state. If the calibration test data conforms to the corresponding relationship between voltage or current and temperature under the ideal state, then the calibration test data is determined as Target data; if the calibration measurement data does not conform to the corresponding relationship between voltage or current and temperature under ideal conditions, discard or ignore the measurement data.
在一些实施例中,ATE的DSP芯片中设定有偏差阈值,若DSP芯片确定校准测试数据与理想状态下的电压或电流与温度的对应关系超过偏差阈值,则将该校准测试数据删除;若校准测试数据与理想状态下的电压或电流与温度的对应关系之间的数据偏差在偏差阈值范围内,则将该校准测试数据作为目标数据。 In some embodiments, a deviation threshold is set in the DSP chip of ATE. If the DSP chip determines that the correspondence between the calibration test data and the voltage or current and temperature under the ideal state exceeds the deviation threshold, the calibration test data will be deleted; if If the data deviation between the calibration test data and the corresponding relationship between voltage or current and temperature under the ideal state is within the deviation threshold range, the calibration test data is used as the target data.
示例性地,理想状态下,向ESD保护电路的二极管施加激励电流为100μA,二极管两端的电压与温度的关系曲线方程为:y=3x+1,纵坐标y为电压,横坐标x为温度,ATE的PMU对目标芯片的同类芯片进行加流测压,施加的激励电流为100μA,获取的校准测试数据分别为A(1,4.1)、B(2,6.5)、C(3,12)、D(4,12.5),其中,偏差阈值为0.15,测试数据C中温度为12°、理想状态下的温度为10°,数据偏差为0.2且大于偏差阈值,校准测试数据A、B及D的数据偏差小于偏差阈值,将测试数据A、B及D作为目标数据。For example, under ideal conditions, the excitation current applied to the diode of the ESD protection circuit is 100 μA, and the relationship curve equation between the voltage across the diode and the temperature is: y=3x+1, the ordinate y is the voltage, the abscissa x is the temperature, ATE's PMU performs current pressure measurement on similar chips of the target chip. The applied excitation current is 100μA. The calibration test data obtained are A(1,4.1), B(2,6.5), C(3,12), D(4,12.5), where the deviation threshold is 0.15, the temperature in test data C is 12°, the temperature in the ideal state is 10°, the data deviation is 0.2 and greater than the deviation threshold, the calibration test data A, B and D The data deviation is less than the deviation threshold, and the test data A, B and D are used as target data.
如此,依据理想状态下电压或电流与温度的对应关系确定ATE的测试数据中的目标数据,以剔除测试数据中不符合的测试数据,提升测试数据的准确性。In this way, the target data in the ATE test data is determined based on the corresponding relationship between voltage or current and temperature in the ideal state, so as to eliminate unconforming test data from the test data and improve the accuracy of the test data.
S403、DSP芯片依据目标数据确定同类芯片的电压或电流与温度之间的对应关系。S403. The DSP chip determines the corresponding relationship between the voltage or current and temperature of similar chips based on the target data.
其中,同类芯片的电流或电压与温度之间的关系可为如2所示的线性关系;也可为非线性关系,如图3所示,在特定激励电流下,每个二极管两端的电压范围对应一个温度。Among them, the relationship between the current or voltage of similar chips and temperature can be a linear relationship as shown in 2; it can also be a nonlinear relationship, as shown in Figure 3. Under a specific excitation current, the voltage range across each diode Corresponds to a temperature.
如此,为了提升目标芯片的同类芯片的电流或电压与温度之间的对应关系的准确性,依据理想状态下的电流或电压与温度之间的关系对同类芯片的校准测试数据进行校准,以实现对校准测试数据进行精确化处理,提升目标数据的精准性,从而提升目标芯片的同类芯片的电流或电压与温度之间的对应关系的准确性。In this way, in order to improve the accuracy of the corresponding relationship between the current or voltage and temperature of similar chips of the target chip, the calibration test data of similar chips is calibrated based on the relationship between current or voltage and temperature under ideal conditions to achieve Precisely process the calibration test data to improve the accuracy of the target data, thereby improving the accuracy of the correspondence between the current or voltage and temperature of similar chips of the target chip.
在对ATE测试目标芯片的温度之前,可通过对目标芯片的同类芯片进行测试,以确定目标芯片的同类芯片的稳定时间,ATE可依据同类芯片的稳定时间对目标芯片进行温度测试。即在目标芯片在测试环境所驻留的时间大于或等于稳定时间时,ATE对目标芯片进行温度测试,以减少温度测试的次数,提升温度测试的效率。Before testing the temperature of the target chip on ATE, you can test similar chips of the target chip to determine the stabilization time of similar chips of the target chip. ATE can conduct temperature tests on the target chip based on the stabilization time of similar chips. That is, when the target chip resides in the test environment for a time greater than or equal to the stable time, ATE performs a temperature test on the target chip to reduce the number of temperature tests and improve the efficiency of temperature tests.
可以理解,在测试环境的环境温度相同的情况下,不同规格的芯片的稳定时间不同,因此依据芯片的器件种类与工艺特点对芯片进行分类,然后确定每类芯片的稳定时间。以便对目标芯片进行测试时,可以直接使用该目标芯片的同类芯片对应的稳定时间。It can be understood that when the ambient temperature of the test environment is the same, the stabilization time of chips of different specifications is different. Therefore, the chips are classified according to their device types and process characteristics, and then the stabilization time of each type of chip is determined. In order to test the target chip, the corresponding stabilization time of similar chips of the target chip can be directly used.
进一步地,若测试环境所要达到的温度不同,芯片对应的稳定时间也不同。例如,测试环境的温度为30°,芯片对应的稳定时间为30秒,测试环境的温度为40°,芯片对应的稳定时间为40秒。因此,为了获取目标芯片对应于特定温度的稳定时间,可将一个或多个目标芯片的同类芯片放置于特定温度的测试环境(例如保温箱)中,然后设置多个测试时间点,并在每个测试时间点,通过图1所示的ATE测试同类芯片的温度。在测试过程中,若ATE在多个连续的测试时间点测试的同类芯片的温度均相等,则确定同类芯片与其测试环境处于热平衡,并依据同类芯片温度相等的多个连续的测试时间点确定目标芯片的同类芯片的稳定时间。Furthermore, if the temperature to be reached in the test environment is different, the corresponding stabilization time of the chip will also be different. For example, if the temperature of the test environment is 30°, the corresponding stabilization time of the chip is 30 seconds; if the temperature of the test environment is 40°, the corresponding stabilization time of the chip is 40 seconds. Therefore, in order to obtain the stabilization time of the target chip corresponding to a specific temperature, one or more similar chips of the target chip can be placed in a test environment (such as an incubator) at a specific temperature, and then multiple test time points are set, and each test time point is At each test time point, the temperature of similar chips is tested through the ATE shown in Figure 1. During the test, if the temperatures of similar chips tested by ATE at multiple consecutive test time points are all equal, it is determined that similar chips are in thermal equilibrium with their test environment, and the target is determined based on multiple consecutive test time points where the temperatures of similar chips are equal. The stabilization time of similar chips of the chip.
请参见图5,为本申请实施例提供的一种目标芯片的同类芯片的稳定时间的确定方法,确定稳定时间的方法包括以下步骤:Please refer to Figure 5 , which is a method for determining the stabilization time of a similar chip of a target chip provided by an embodiment of the present application. The method of determining the stabilization time includes the following steps:
S501、PMU获取测试环境的同类芯片的稳定测试数据,并将稳定测试数据向DSP芯片发送。S501 and PMU obtain the stable test data of similar chips in the test environment and send the stable test data to the DSP chip.
其中,测试环境包括环境温度,稳定测试数据包括在环境温度下,同类芯片的多个时间点对应的电流或电压。Among them, the test environment includes the ambient temperature, and the stable test data includes the current or voltage corresponding to multiple time points of similar chips under the ambient temperature.
具体地,将同类芯片放置于测试环境中,然后PMU在多个预设的测试时间点向同类芯片的ESD保护电路的二极管施加激励电压或激励电流,并获取接受激励后的二极管两端的电压或流过二极管的电流。将接受激励后的二极管两端的电压或流过二极管的电流将作为同类 芯片的稳定测试数据,并将稳定测试数据发送至DSP芯片。Specifically, similar chips are placed in the test environment, and then the PMU applies excitation voltage or excitation current to the diodes of the ESD protection circuits of the similar chips at multiple preset test time points, and obtains the voltage or voltage across the diode after receiving the excitation. The current flowing through the diode. The voltage across the diode or the current flowing through the diode after being excited will be treated as the same type. Stable test data of the chip and send the stable test data to the DSP chip.
S502、DSP芯片接收稳定测试数据,依据稳定测试数据确定稳定时间。S502, DSP chip receives stable test data and determines the stabilization time based on the stable test data.
在一些实施例中,ATE中存储有对应关系,DSP芯片可依据稳定测试数据中的多个测试时间点及对应关系确定多个测试时间点对应的同类芯片的温度,然后依据温度相同的多个连续测试时间点确定稳定时间。其中,对应关系描述了与目标芯片同类芯片的ESD保护电路的二极管两端的电压或流过二极管的电流与同类芯片的温度的之间的关系。In some embodiments, there is a corresponding relationship stored in the ATE. The DSP chip can determine the temperatures of similar chips corresponding to multiple test time points based on multiple test time points and corresponding relationships in the stable test data, and then based on multiple test time points with the same temperature. Consecutive test time points determine stabilization time. Among them, the correspondence relationship describes the relationship between the voltage across the diode of the ESD protection circuit of the same chip as the target chip or the current flowing through the diode and the temperature of the similar chip.
当然,在其他实施例中,在测试环境的环境温度相同的情况下,若PMU获取的稳定测试数据中的多个测试时间点的电流或电压相同,则多个测试时间点对应的同类芯片的温度也相同,因此,可依据电流或电压相同的多个连续测试时间点确定稳定时间。Of course, in other embodiments, when the ambient temperature of the test environment is the same, if the currents or voltages at multiple test time points in the stable test data obtained by the PMU are the same, then the values of similar chips corresponding to the multiple test time points will be the same. The temperature is also the same, so the stabilization time can be determined from multiple consecutive test time points with the same current or voltage.
进一步地,目标芯片的同类芯片的二极管的电压和\或电流与同类芯片的温度之间的关系可为线性关系,即一个电流或电压对应一个温度,也可为多对一的关系,例如多个电流或电压对应一个温度值,或一个电流范围或电压的范围对应一个温度。Furthermore, the relationship between the voltage and/or current of diodes of similar chips of the target chip and the temperature of similar chips can be a linear relationship, that is, one current or voltage corresponds to one temperature, or it can be a many-to-one relationship, such as many. A current or voltage corresponds to a temperature value, or a current range or voltage range corresponds to a temperature.
进一步地,若依据对应关系,一个电流或电压范围对应一个温度,例如当二极管两端的电压为0.7V~0.8V,目标芯片的温度均为30°,则在ATE测试目标芯片温度时,当二极管的电流处于预设温度对应的电流范围或二极管的电压处于电压范围,则均可确定目标芯片达到预设温度。Furthermore, if according to the corresponding relationship, a current or voltage range corresponds to a temperature, for example, when the voltage across the diode is 0.7V ~ 0.8V and the temperature of the target chip is 30°, then when the ATE tests the target chip temperature, when the diode If the current is within the current range corresponding to the preset temperature or the voltage of the diode is within the voltage range, it can be determined that the target chip has reached the preset temperature.
可以理解,S502中,依据稳定测试数据确定稳定时间,包括,但不局限于以下方式。It can be understood that in S502, the stabilization time is determined based on the stability test data, including, but not limited to, the following methods.
方式一,将目标芯片的同类芯片的温度和测试环境的环境温度相同的时间确定为稳定时间或将同类芯片的二极管的电流或电压与测试环境的环境温度对应的电流或电压相等的时间确定为稳定时间。Method 1: Determine the time when the temperature of the similar chip of the target chip is the same as the ambient temperature of the test environment as the stabilization time, or determine the time when the current or voltage of the diode of the similar chip is equal to the current or voltage corresponding to the ambient temperature of the test environment as the stable time. stable schedule.
方式二,在一些实施例中,将多个测试时间点对应的同类芯片的温度中首次出现测试环境的温度相同的测试时间点确定为稳定时间、或将多个测试点对应的电压或电流中首次出现对测试环境的温度对应的电压或电流相等的测试时间点前确定为稳定时间。示例性地,假设环境温度为35°,且ATE测试同类芯片的温度首次变为35°的时间点为1分30秒,则稳定时间为1分30秒。Method two, in some embodiments, the test time point at which the temperature of the test environment first appears to be the same among the temperatures of similar chips corresponding to multiple test time points is determined as the stabilization time, or the voltage or current corresponding to the multiple test points is determined as the stabilization time. The stabilization time is determined before the test time point when the voltage or current corresponding to the temperature of the test environment is equal for the first time. For example, assuming that the ambient temperature is 35°, and the time point when the temperature of a similar chip in the ATE test first changes to 35° is 1 minute and 30 seconds, the stabilization time is 1 minute and 30 seconds.
方式三,在其他实施例中,ATE在连续多个测试时间点测试的同类芯片的温度均相等且为环境温度时,可依据同类芯片的温度相同的多个连续测试时间点确定对应的稳定时间或ATE在连续多个测试时间点测试的同类芯片的二极管的电压或电流均相等时,可依据同类芯片的电压或电流均相同的多个连续测试时间点确定对应的稳定时间。示例性地,ATE每隔10秒测试一次同类芯片的温度,ATE在1分20秒、1分30秒、1分40秒、1分50秒测试的同类芯片的温度均相同且等于环境温度,ATE的DSP芯片依据以上多个连续测试时间点确定稳定时间为:1分25秒~1分35秒。Method 3: In other embodiments, when the temperatures of similar chips tested by ATE at multiple consecutive test time points are all equal and at ambient temperature, the corresponding stabilization time can be determined based on multiple consecutive test time points where the temperatures of similar chips are the same. Or when the voltages or currents of diodes of similar chips tested by ATE at multiple consecutive test time points are all equal, the corresponding stabilization time can be determined based on multiple consecutive test time points where the voltage or current of similar chips are the same. For example, ATE tests the temperature of similar chips every 10 seconds. The temperatures of similar chips tested by ATE at 1 minute 20 seconds, 1 minute 30 seconds, 1 minute 40 seconds, and 1 minute 50 seconds are all the same and equal to the ambient temperature. ATE's DSP chip determines the stabilization time based on the above multiple continuous test time points: 1 minute 25 seconds to 1 minute 35 seconds.
方式四,在其他实施例中,为了提升稳定时间的准确性,在测试环境的环境温度确定的情况下,ATE可通过图5所示的方法对同一同类芯片进行多次测试,以得到多个稳定时间。对应地,ATE的DSP芯片可依据多个稳定时间确定同类芯片的稳定时间。例如,ATE对同一同类芯片进行多轮测试,以获取每轮测试的稳定时间,ATE的DSP芯片计算多个稳定时间的均值,并将该均值作为同类芯片的稳定时间。可以理解,通过多次测量,可覆盖不同芯片的工艺偏差,提升芯片的稳定时间的准确性。Method 4: In other embodiments, in order to improve the accuracy of the stabilization time, when the ambient temperature of the test environment is determined, ATE can conduct multiple tests on the same type of chip through the method shown in Figure 5 to obtain multiple stable schedule. Correspondingly, ATE's DSP chip can determine the stabilization time of similar chips based on multiple stabilization times. For example, ATE conducts multiple rounds of testing on the same type of chip to obtain the stabilization time of each round of testing. ATE's DSP chip calculates the average of multiple stabilization times and uses the average as the stabilization time of the same type of chip. It can be understood that through multiple measurements, the process deviations of different chips can be covered and the accuracy of the chip's stabilization time can be improved.
方式五,在其他实施例中,ATE对多个相同规格的同类芯片进行测试,得到多个稳定时间,ATE的DSP芯片依据多个稳定时间确定同类芯片的稳定时间。 Method 5: In other embodiments, ATE tests multiple similar chips with the same specifications to obtain multiple stabilization times, and ATE's DSP chip determines the stabilization time of similar chips based on the multiple stabilization times.
示例性地,同类芯片包括:规格相同的芯片1、芯片2及芯片3,通过ATE测试3个同类芯片,并获得芯片1对应的稳定时间T1、芯片2对应的稳定时间T2及芯片3对应的稳定时间T3,ATE的DSP芯片确定目标芯片的同类芯片的稳定时间为(T1+T2+T3)/3。For example, similar chips include: chip 1, chip 2, and chip 3 with the same specifications. Test three similar chips through ATE, and obtain the stability time T1 corresponding to chip 1, the stability time T2 corresponding to chip 2, and the stability time T2 corresponding to chip 3. Stability time T3, ATE's DSP chip determines that the stabilization time of similar chips of the target chip is (T1+T2+T3)/3.
在确定目标芯片的同类芯片的稳定时间和对应关系之后,ATE可对目标芯片进行温度测试,请参见图6,为本申请实施例提供的一种芯片温度测试方法的流程示意图。该芯片温度测试方法可应用于ATE。下面以芯片温度测试方法应用于图1中的ATE为例进行详细说明。如图6所示,芯片温度测试方法包括以下步骤。After determining the stabilization time and corresponding relationship of similar chips of the target chip, ATE can perform a temperature test on the target chip. Please refer to Figure 6, which is a schematic flow chart of a chip temperature testing method provided by an embodiment of the present application. This chip temperature test method can be applied to ATE. The following uses the chip temperature test method applied to the ATE in Figure 1 as an example for detailed explanation. As shown in Figure 6, the chip temperature testing method includes the following steps.
S601、若目标芯片在测试环境中的时间满足稳定时间,PMU获取目标芯片的ESD保护电路的二极管的电参数,并将电参数向DSP芯片发送。S601. If the time of the target chip in the test environment meets the stable time, the PMU obtains the electrical parameters of the diode of the ESD protection circuit of the target chip and sends the electrical parameters to the DSP chip.
其中,在对待测芯片的性能等进行测试前,目标芯片处于未上电状态。稳定时间为目标芯片的同类芯片的温度与测试环境的环境温度达到相同所需的时间,电参数包括电压和\电流。Among them, before testing the performance of the chip under test, the target chip is not powered on. The stabilization time is the time required for the temperature of similar chips of the target chip to reach the same temperature as the ambient temperature of the test environment. The electrical parameters include voltage and current.
在一些实施例中,对目标芯片进行性能测试时,将目标芯片放置于预设温度(例如35°)的测试环境中,当目标芯片的温度达到预设温度时,可对目标芯片进行上电,并对目标芯片进行性能测试。为了保证目标芯片的片上真实温度处于预设温度。目标芯片在测试环境中的停留时间大于或等于稳定时间时,确定目标芯片在测试环境中的时间满足稳定时间,目标芯片与测试环境达到热平衡,目标芯片的温度处于稳定状态,然后ATE测量目标芯片的温度,以提升目标芯片的温度测量的准确度,并通过ATE测量的目标芯片的温度以确定目标芯片是否达到测试环境的环境温度,若ATE测量的温度与环境温度相同,则确定目标芯片达到环境温度,可对目标芯片进行性能等其他测试;若目标芯片的温度未达到环境温度,则可采用措施,例如增大目标芯片在预设的测试环境中的预先设置时间,并对目标芯片重新进行温度测试,以保证目标芯片达到测试环境的环境温度。In some embodiments, when performing performance testing on the target chip, the target chip is placed in a test environment with a preset temperature (for example, 35°C). When the temperature of the target chip reaches the preset temperature, the target chip can be powered on. , and perform performance testing on the target chip. In order to ensure that the real on-chip temperature of the target chip is at the preset temperature. When the residence time of the target chip in the test environment is greater than or equal to the stable time, determine that the time of the target chip in the test environment meets the stable time, the target chip and the test environment reach thermal equilibrium, and the temperature of the target chip is in a stable state, and then ATE measures the target chip temperature to improve the accuracy of the temperature measurement of the target chip, and use the temperature of the target chip measured by ATE to determine whether the target chip has reached the ambient temperature of the test environment. If the temperature measured by ATE is the same as the ambient temperature, it is determined that the target chip has reached If the temperature of the target chip does not reach the ambient temperature, measures can be taken, such as increasing the preset time of the target chip in the preset test environment and resetting the target chip. Conduct a temperature test to ensure that the target chip reaches the ambient temperature of the test environment.
请参见图7,为本申请实施例提供的一种ATE测试目标芯片的示意图。如图7所示,以目标芯片具有ESD保护电路为例,ESD保护电路包括二极管D1和D2。ATE的PMU可对二极管D1和D2进行加流测压。具体地,PMU通过目标芯片的信号引脚1和信号引脚2向二极管D1和D2施加电流,以得到二极管D1和D2两端的电压。Please refer to FIG. 7 , which is a schematic diagram of an ATE test target chip provided by an embodiment of the present application. As shown in Figure 7, take the target chip having an ESD protection circuit as an example. The ESD protection circuit includes diodes D1 and D2. ATE's PMU can perform voltage measurement on diodes D1 and D2. Specifically, the PMU applies current to the diodes D1 and D2 through the signal pin 1 and the signal pin 2 of the target chip to obtain the voltages across the diodes D1 and D2.
进一步地,为了提升二极管D1和D2两端的电压的准确性,PMU可对二极管D1和D2施加不同的电流,并获得每种电流对应的二极管D1和D2两端的电压。Further, in order to improve the accuracy of the voltages across diodes D1 and D2, the PMU can apply different currents to diodes D1 and D2 and obtain the voltages across diodes D1 and D2 corresponding to each current.
可以理解,在其他实施例中,ATE的PMU可对二极管D1和D2进行加压测流。具体地,PMU通过目标芯片的信号引脚向二极管D1和D2施加电压,以得到流过二极管D1和D2的电流。It can be understood that in other embodiments, the PMU of ATE can perform voltage and current measurement on diodes D1 and D2. Specifically, the PMU applies voltage to the diodes D1 and D2 through the signal pins of the target chip to obtain the current flowing through the diodes D1 and D2.
在一些实施例中,PMU获取的电流或电压均为模拟量,相较于数字量,模拟量更能准确体现二极管两端的电流值或电压值,PMU采用模拟量的电流或电压作为处理对象,可提升数据的准确性。若PMU获取的二极管两端的电压和/或流过二极管的电流为数字量,则PMU对二极管两端的压降和/或流过二极管的电流的数字量进行数模转换,以得到二极管两端的电压和/或流过二极管的电流的模拟量。In some embodiments, the current or voltage obtained by the PMU is an analog quantity. Compared with the digital quantity, the analog quantity can more accurately reflect the current value or voltage value at both ends of the diode. The PMU uses the analog quantity current or voltage as the processing object. Can improve the accuracy of data. If the voltage across the diode and/or the current flowing through the diode obtained by the PMU are digital quantities, the PMU performs digital-to-analog conversion on the voltage drop across the diode and/or the digital quantity of the current flowing through the diode to obtain the voltage across the diode. and/or an analog quantity of the current flowing through the diode.
S602、DSP芯片接收电参数,并依据电参数与对应关系确定目标芯片的当前温度。S602. The DSP chip receives the electrical parameters and determines the current temperature of the target chip based on the electrical parameters and the corresponding relationship.
其中,对应关系描述了目标芯片的同类芯片的电参数与温度之间的变化关系。 Among them, the correspondence relationship describes the changing relationship between the electrical parameters and temperature of similar chips of the target chip.
具体地,ATE中存储有目标芯片的同类芯片的对应关系,当PMU将目标芯片的ESD保护电路的二极管的电压或电流向DSP芯片发送,DSP芯片依据电参数从对应关系中查询目标芯片的当前温度。Specifically, the ATE stores the corresponding relationship between similar chips of the target chip. When the PMU sends the voltage or current of the diode of the ESD protection circuit of the target chip to the DSP chip, the DSP chip queries the current current value of the target chip from the corresponding relationship based on the electrical parameters. temperature.
可以理解,当PMU向目标芯片的ESD保护电路的二极管施加不同的电压或激励电流,电压或电流与目标芯片的温度的对应关系也不同。因此,PMU还用于向DSP芯片发送向目标芯片的ESD保护电路的二极管施加的电压或激励电流,DSP芯片接收到该电压或激励电流之后依据电压或激励电流确定同类芯片的对应关系,然后依据对应关系与电参数确定目标芯片的当前温度。It can be understood that when the PMU applies different voltages or excitation currents to the diodes of the ESD protection circuit of the target chip, the corresponding relationship between the voltage or current and the temperature of the target chip is also different. Therefore, the PMU is also used to send the voltage or excitation current applied to the diode of the ESD protection circuit of the target chip to the DSP chip. After receiving the voltage or excitation current, the DSP chip determines the corresponding relationship between similar chips based on the voltage or excitation current, and then based on The corresponding relationship with the electrical parameters determines the current temperature of the target chip.
上述ATE确定目标芯片的温度的方法是在目标芯片满足稳定时间的前提下测量的,此时目标芯片与其测试环境达到热平衡,因此目标芯片的当前温度处于稳定状态。即ATE测试的目标芯片的当前温度是其稳定的温度,通过稳定时间对目标芯片进行温度测试,可提升目标芯片的温度测试的准确性和效率,特别适用于大批量的芯片的温度测试场景。另外,通过设定稳定时间,可减少无效的测试次数,以提升温度测试的效率。The above ATE method of determining the temperature of the target chip is measured under the premise that the target chip meets the stabilization time. At this time, the target chip and its test environment reach thermal equilibrium, so the current temperature of the target chip is in a stable state. That is, the current temperature of the target chip in the ATE test is its stable temperature. Temperature testing of the target chip through the stabilization time can improve the accuracy and efficiency of the temperature test of the target chip, and is especially suitable for temperature test scenarios of large batches of chips. In addition, by setting the stabilization time, the number of invalid tests can be reduced to improve the efficiency of temperature testing.
进一步地,上述测试方法通过ATE获取目标芯片的ESD保护电路的二极管的电流或电压,并依据电流或电压与同类芯片的对应关系确定目标芯片的温度,该温度为目标芯片的片上真实温度,相较于通过热电偶测试目标芯片的附近的温度,上述温度测试方法提升了目标芯片温度测试的准确性,简化了ATE的结构,节省了ATE的成本。Further, the above test method obtains the current or voltage of the diode of the ESD protection circuit of the target chip through ATE, and determines the temperature of the target chip based on the corresponding relationship between the current or voltage and similar chips. This temperature is the real on-chip temperature of the target chip, which is equivalent to Compared with testing the temperature near the target chip through a thermocouple, the above temperature testing method improves the accuracy of the target chip temperature test, simplifies the structure of the ATE, and saves the cost of the ATE.
可以理解,本申请的芯片温度测试方法可用于对目标芯片进行性能测试之前,以判断目标芯片是否达到预设温度,预设温度可为测试环境的环境温度。当预设温度确定的情况下,可调整测试环境的环境温度与预设温度相同,并将目标芯片放置于测试环境中,以使目标芯片的温度达到预设温度。It can be understood that the chip temperature testing method of the present application can be used to determine whether the target chip has reached a preset temperature before performing a performance test on the target chip. The preset temperature can be the ambient temperature of the test environment. When the preset temperature is determined, the ambient temperature of the test environment can be adjusted to be the same as the preset temperature, and the target chip is placed in the test environment so that the temperature of the target chip reaches the preset temperature.
其中,预设温度可为目标芯片进行性能测试所要达到的温度。例如,该性能测试需要使目标芯片的温度处于45°,则预设温度为45°。The preset temperature may be the temperature that the target chip reaches for performance testing. For example, if this performance test requires the temperature of the target chip to be at 45°, the default temperature is 45°.
在一些实施例中,上述芯片温度测试方法还包括:In some embodiments, the above chip temperature testing method also includes:
若目标芯片的温度与测试环境的环境温度不相同,PMU依据多个测试时间点对目标芯片进行测试,以得到多个测试时间点对应的目标芯片的ESD保护电路的二极管的电流或电压,并将该电流或电压向DSP芯片发送;If the temperature of the target chip is different from the ambient temperature of the test environment, the PMU tests the target chip based on multiple test time points to obtain the current or voltage of the diode of the ESD protection circuit of the target chip corresponding to the multiple test time points, and Send the current or voltage to the DSP chip;
DSP芯片接收电流或电压,依据电流或电压与对应关系确定目标芯片的温度,依据目标芯片的温度与测试环境的环境温度相同的测试时间点更新稳定时间。The DSP chip receives current or voltage, determines the temperature of the target chip based on the current or voltage and the corresponding relationship, and updates the stabilization time based on the test time point when the temperature of the target chip is the same as the ambient temperature of the test environment.
具体地,DSP芯片依据同类芯片的对应关系和接收到电流和\电压确定目标芯片的当前温度,当测试获取的当前温度与测试环境的环境温度不相同时,PMU依据预设的多个测试时间点对目标芯片进行再次测试,并将再次测试得到的电流或电压向DSP芯片发送。DSP芯片依据电流或电压与对应关系确定测试时间点对应的目标芯片的当前温度,然后确定与测试环境的环境温度相同的目标芯片的当前温度对应的测试时间点,最后依据该测试时间点更新稳定时间。Specifically, the DSP chip determines the current temperature of the target chip based on the corresponding relationship between similar chips and the received current and voltage. When the current temperature obtained by the test is different from the ambient temperature of the test environment, the PMU determines the current temperature of the target chip based on the preset multiple test times. Click to test the target chip again, and send the current or voltage obtained by the retest to the DSP chip. The DSP chip determines the current temperature of the target chip corresponding to the test time point based on the current or voltage and the corresponding relationship, then determines the test time point corresponding to the current temperature of the target chip that is the same as the ambient temperature of the test environment, and finally updates the stability based on the test time point time.
示例性的,假设预设温度为35°对应的稳定时间为30秒,当将目标芯片在测试环境中放置的时间大于或等于稳定时间,ATE测试目标芯片的温度为34°且小于35°,然后ATE获取测试时间点为5秒,并在5秒后测试目标芯片的温度,若该温度为35°且等于预设温度,则DSP芯片更新稳定时间为(30+5)/2=32.5秒。For example, assuming that the preset temperature is 35° and the corresponding stabilization time is 30 seconds, when the target chip is placed in the test environment for a time greater than or equal to the stabilization time, the temperature of the ATE test target chip is 34° and less than 35°. Then ATE obtains the test time point of 5 seconds and tests the temperature of the target chip after 5 seconds. If the temperature is 35° and equal to the preset temperature, the DSP chip update stabilization time is (30+5)/2=32.5 seconds .
可以理解,本申请的实施例中,PMU向二极管施加激励电流,并获取施加激励电流后的 二极管两端的电压,或PMU向二极管施加激励电压,并获取施加激励电压后的流过二极管的电流。在其他实施例中,可由其他设备向目标芯片的ESD保护电路的二极管施加电流或激励电压或ATE的其他模块向目标芯片的ESD保护电路的二极管施加电流或激励电压。It can be understood that in the embodiment of the present application, the PMU applies an excitation current to the diode and obtains the The voltage across the diode, or the PMU applies an excitation voltage to the diode and obtains the current flowing through the diode after applying the excitation voltage. In other embodiments, other devices may apply current or excitation voltage to the diodes of the ESD protection circuit of the target chip or other modules of the ATE may apply current or excitation voltage to the diodes of the ESD protection circuit of the target chip.
在一些实施例中,ATE还包括测试模块(图未示),测试模块用于对目标芯片进行上电测试,例如目标芯片的当前温度达到预设温度(例如,测试环境的环境温度),测试模块开始对目标芯片上电,进行性能或可靠性的测试。In some embodiments, the ATE also includes a test module (not shown). The test module is used to perform a power-on test on the target chip. For example, if the current temperature of the target chip reaches a preset temperature (for example, the ambient temperature of the test environment), the test The module starts to power on the target chip to perform performance or reliability testing.
则上述芯片温度测试方式还包括:The above chip temperature testing methods also include:
若所述目标芯片的当前温度与所述测试环境的环境温度相等,则所述测试模块对所述目标芯片进行上电测试。例如对目标进行高低温测试。If the current temperature of the target chip is equal to the ambient temperature of the test environment, the test module performs a power-on test on the target chip. For example, perform high and low temperature tests on targets.
请参考图8,图8为本申请实施例提供的自动化测试设备110的结构图。如图8所示,自动化测试设备110包括:MCU10、发送器20、接收器30、存储器40、端口50及DSP芯片。Please refer to FIG. 8 , which is a structural diagram of the automated testing equipment 110 provided by the embodiment of the present application. As shown in Figure 8, the automated test equipment 110 includes: MCU 10, transmitter 20, receiver 30, memory 40, port 50 and DSP chip.
具体地,存储器40、发送器20、接收器30、MCU10和DSP芯片60之间可以通过总线进行连接。当然,在实际运用中,存储器40、发送器20、接收器30、DSP芯片60、MCU10之间可以不是总线结构,而可以是其它结构,例如星型结构,本申请不作具体限定。Specifically, the memory 40, the transmitter 20, the receiver 30, the MCU 10 and the DSP chip 60 may be connected through a bus. Of course, in actual application, the memory 40, the transmitter 20, the receiver 30, the DSP chip 60, and the MCU 10 may not have a bus structure, but may have other structures, such as a star structure, which is not specifically limited in this application.
可选的,存储器40可以包括只读存储器(Read Only Memory,ROM)、随机存取存储器(Random Access Memory,RAM)和磁盘存储器。存储器40用于存储MCU运行时所需的数据。存储器40的数量为一个或多个,用于存储一个或多个程序。Optionally, the memory 40 may include read-only memory (Read Only Memory, ROM), random access memory (Random Access Memory, RAM), and disk memory. The memory 40 is used to store data required when the MCU is running. The number of memories 40 is one or more and is used to store one or more programs.
可选的,端口50的数量为一个或多个,用于与上层或下层的自动化测试设备110连接。如果自动化测试设备110为连接主机或服务器的自动化测试设备110,端口50还用于与主机或服务器连接。Optionally, the number of ports 50 is one or more, used to connect to the upper or lower automated test equipment 110 . If the automated test device 110 is an automated test device 110 connected to a host or a server, port 50 is also used to connect to the host or server.
可选的,发送器20和接收器30在物理上可以相互独立也可以集成在一起。发送器20可以通过端口50进行数据发送。接收器30可以通过端口50进行数据接收。Optionally, the transmitter 20 and the receiver 30 may be physically independent of each other or integrated together. Transmitter 20 can transmit data through port 50. Receiver 30 may receive data through port 50.
当存储器中一个或多个程序被PMU或DSP芯片执行,使得PMU实现上述任一项实施例的芯片温度测试方法中PMU所执行的操作,DSP芯片实现上述任一项实施例的芯片温度测试方法中所述DSP芯片所执行的操作。When one or more programs in the memory are executed by the PMU or DSP chip, the PMU implements the operations performed by the PMU in the chip temperature testing method of any of the above embodiments, and the DSP chip implements the chip temperature testing method of any of the above embodiments. The operations performed by the DSP chip described in .
进一步地,ATE还包括测试模块70,在目标芯片的温度与测试环境的环境温度相同时,测试模块用于对目标芯片进行上电测试。Further, the ATE also includes a test module 70, which is used to perform a power-on test on the target chip when the temperature of the target chip is the same as the ambient temperature of the test environment.
本领域内的技术人员应明白,本申请的实施例可提供为方法、系统、或计算机程序产品。因此,本申请可采用硬件实施例、软件实施例、或结合软件和硬件方面的实施例的形式。而且,本申请可采用在一个或多个其中包含有计算机可用程序代码的计算机可用存储介质(包括但不限于磁盘存储器、CD-ROM、光学存储器等)上实施的计算机程序产品的形式。这些计算机程序代码可以存储在能引导计算机或其他可编程数据处理设备以特定方式工作的计算机可读存储器中。Those skilled in the art will understand that embodiments of the present application may be provided as methods, systems, or computer program products. Accordingly, the present application may take the form of a hardware embodiment, a software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein. These computer program codes may be stored in computer-readable memory that directs a computer or other programmable data processing device to operate in a particular manner.
本实施例还提供一种计算机存储介质,该计算机存储介质中存储有计算机指令,当该计算机指令在自动化测试设备上运行时,使得自动化测试设备执行上述相关方法步骤实现上述实施例中的芯片温度测试方法。This embodiment also provides a computer storage medium. Computer instructions are stored in the computer storage medium. When the computer instructions are run on the automated testing equipment, the automated testing equipment executes the above related method steps to achieve the chip temperature in the above embodiment. Test Methods.
本实施例还提供了一种计算机程序产品,当该计算机程序产品在自动化测试设备上运行时,使得自动化测试设备执行上述相关步骤,以实现上述实施例中的芯片温度测试方法。This embodiment also provides a computer program product. When the computer program product is run on the automated testing equipment, the automated testing equipment performs the above related steps to implement the chip temperature testing method in the above embodiment.
另外,本申请的实施例还提供一种装置,这个装置具体可以是芯片,组件或模块,该装 置可包括相连的处理器和存储器;其中,存储器用于存储计算机执行指令,当装置运行时,处理器可执行存储器存储的计算机执行指令,以使芯片执行上述各方法实施例中的芯片温度测试方法。In addition, embodiments of the present application also provide a device. This device may be a chip, a component or a module. The device The device may include a connected processor and memory; wherein the memory is used to store computer execution instructions. When the device is running, the processor may execute the computer execution instructions stored in the memory to cause the chip to perform the chip temperature test in each of the above method embodiments. method.
通过以上的实施方式的描述,所属领域的技术人员可以清楚地了解到,为描述的方便和简洁,仅以上述各功能模块的划分进行举例说明,实际应用中,可以根据需要而将上述功能分配由不同的功能模块完成,即将装置的内部结构划分成不同的功能模块,以完成以上描述的全部或者部分功能。Through the above description of the embodiments, those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above functional modules is used as an example. In actual applications, the above functions can be allocated as needed. It is completed by different functional modules, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above.
在本申请所提供的几个实施例中,应该理解到,所揭露的装置和方法,可以通过其他的方式实现。例如,以上所描述的装置实施例仅仅是示意性的,例如,该模块或模块的划分,仅仅为一种逻辑功能划分,实际实现时可以有另外的划分方式,例如多个模块或组件可以结合或者可以集成到另一个装置,或一些特征可以忽略,或不执行。另一点,所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些接口,装置或模块的间接耦合或通信连接,可以是电性,机械或其他的形式。In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only illustrative. For example, the modules or the division of modules are only a logical function division. In actual implementation, there may be other division methods, for example, multiple modules or components may be combined. Either it can be integrated into another device, or some features can be ignored, or not implemented. On the other hand, the coupling or direct coupling or communication connection between each other shown or discussed may be through some interfaces, indirect coupling or communication connection of devices or modules, which may be in electrical, mechanical or other forms.
作为分离部件说明的模块可以是或者也可以不是物理上分开的,作为模块显示的部件可以是一个物理模块或多个物理模块,即可以位于一个地方,或者也可以分布到多个不同地方。可以根据实际的需要选择其中的部分或者全部模块来实现本实施例方案的目的。A module described as a separate component may or may not be physically separate. A component shown as a module may be one physical module or multiple physical modules, that is, it may be located in one place, or it may be distributed to multiple different places. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment.
另外,在本申请各个实施例中的各功能模块可以集成在一个处理模块中,也可以是各个模块单独物理存在,也可以两个或两个以上模块集成在一个模块中。上述集成的模块既可以采用硬件的形式实现,也可以采用软件功能模块的形式实现。In addition, each functional module in each embodiment of the present application can be integrated into one processing module, or each module can exist physically alone, or two or more modules can be integrated into one module. The above integrated modules can be implemented in the form of hardware or software function modules.
该集成的模块如果以软件功能模块的形式实现并作为独立的产品销售或使用时,可以存储在一个可读取存储介质中。基于这样的理解,本申请实施例的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的全部或部分可以以软件产品的形式体现出来,该软件产品存储在一个存储介质中,包括若干指令用以使得一个设备(可以是单片机,芯片等)或处理器(processor)执行本申请各个实施例所述方法的全部或部分步骤。而前述的存储介质包括:U盘、移动硬盘、只读存储器(Read-Only Memory,ROM)、随机存取存储器(Random Access Memory,RAM)、磁碟或者光盘等各种可以存储程序代码的介质。If the integrated module is implemented in the form of a software function module and sold or used as an independent product, it can be stored in a readable storage medium. Based on this understanding, the technical solutions of the embodiments of the present application are essentially or contribute to the existing technology, or all or part of the technical solution can be embodied in the form of a software product, and the software product is stored in a storage medium , including several instructions to cause a device (which can be a microcontroller, a chip, etc.) or a processor to execute all or part of the steps of the methods described in various embodiments of this application. The aforementioned storage media include: U disk, mobile hard disk, read-only memory (ROM), random access memory (Random Access Memory, RAM), magnetic disk or optical disk and other media that can store program code. .
以上所述,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何在本申请揭露的技术范围内的变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以所述权利要求的保护范围为准。 The above are only specific embodiments of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present application shall be covered by the protection scope of the present application. . Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims (16)

  1. 一种芯片温度测试方法,其特征在于,应用于自动化测试设备ATE,所述ATE包括参数测量单元PMU和数字信号处理DSP芯片,所述芯片温度测试方法包括:A chip temperature testing method, characterized in that it is applied to automated testing equipment ATE. The ATE includes a parameter measurement unit PMU and a digital signal processing DSP chip. The chip temperature testing method includes:
    在目标芯片处于未上电状态且在测试环境中的时间满足稳定时间,所述PMU获取所述目标芯片的静电释放ESD保护电路的二极管的电参数,并将所述电参数向所述DSP芯片发送,其中,所述电参数是电参数,所述稳定时间为与所述目标芯片同类芯片的温度与测试环境的环境温度达到相同所需的时间;When the target chip is in an unpowered state and the time in the test environment meets the stabilization time, the PMU obtains the electrical parameters of the diode of the electrostatic discharge ESD protection circuit of the target chip and transmits the electrical parameters to the DSP chip. Send, wherein the electrical parameter is an electrical parameter, and the stabilization time is the time required for the temperature of a chip of the same type as the target chip to reach the same temperature as the ambient temperature of the test environment;
    所述DSP芯片接收所述电参数,并依据所述电参数从预设的对应关系中查询所述目标芯片的当前温度,所述对应关系描述了与所述目标芯片同类芯片的电参数随温度的变化关系。The DSP chip receives the electrical parameters, and queries the current temperature of the target chip from a preset correspondence based on the electrical parameters. The correspondence describes the electrical parameters of chips of the same type as the target chip as the temperature changes. changing relationship.
  2. 如权利要求1所述的芯片温度测试方法,其特征在于,所述PMU获取的所述电参数为模拟量。The chip temperature testing method according to claim 1, wherein the electrical parameters obtained by the PMU are analog quantities.
  3. 如权利要求1或2所述的芯片温度测试方法,其特征在于,所述芯片温度测试方法还包括:The chip temperature testing method according to claim 1 or 2, characterized in that the chip temperature testing method further includes:
    确定所述对应关系,所述确定所述对应关系包括:Determining the corresponding relationship includes:
    所述PMU获取多个同类芯片的校准测试数据,并将所述校准测试数据向所述DSP芯片发送,其中,所述校准测试数据包括:所述同类芯片的ESD保护电路的二极管接收的激励电压、所述同类芯片的多个温度及每个所述温度对应的所述二极管的电流;或,所述同类芯片的ESD保护电路的二极管接收的激励电流、所述同类芯片的多个温度及每个所述温度对应的所述二极管的电压;The PMU obtains the calibration test data of multiple similar chips and sends the calibration test data to the DSP chip, where the calibration test data includes: the excitation voltage received by the diodes of the ESD protection circuits of the similar chips. , multiple temperatures of the similar chip and the current of the diode corresponding to each temperature; or, the excitation current received by the diode of the ESD protection circuit of the similar chip, multiple temperatures of the similar chip and each The voltage of the diode corresponding to the temperature;
    所述DSP芯片接收所述校准测试数据,依据理想状态下的温度与电参数的对应关系确定所述校准测试数据中的目标数据,并依据所述目标数据确定所述对应关系。The DSP chip receives the calibration test data, determines the target data in the calibration test data based on the corresponding relationship between temperature and electrical parameters in an ideal state, and determines the corresponding relationship based on the target data.
  4. 如权利要求1至3任一项所述的芯片温度测试方法,其特征在于,所述测试环境提供环境温度,所述芯片温度测试方法还包括:The chip temperature testing method according to any one of claims 1 to 3, wherein the testing environment provides an ambient temperature, and the chip temperature testing method further includes:
    确定所述稳定时间,所述确定所述稳定时间包括:Determining the stabilization time includes:
    所述PMU获取所述测试环境的同类芯片的稳定测试数据,并将所述稳定测试数据向所述DSP芯片发送,其中,所述稳定测试数据包括所述环境温度下,所述同类芯片在多个测试时间点对应的电参数;The PMU obtains stable test data of similar chips in the test environment, and sends the stable test data to the DSP chip, where the stable test data includes the temperature of the similar chips under the ambient temperature. Electrical parameters corresponding to each test time point;
    所述DSP芯片接收所述稳定测试数据,依据所述稳定测试数据确定所述稳定时间。The DSP chip receives the stability test data and determines the stabilization time based on the stability test data.
  5. 如权利要求1至4任一项所述的芯片温度测试方法,其特征在于,所述PMU获取所述目标芯片的ESD保护电路的二极管的电参数,包括:The chip temperature testing method according to any one of claims 1 to 4, wherein the PMU obtains the electrical parameters of the diode of the ESD protection circuit of the target chip, including:
    所述PMU向所述目标芯片的ESD保护电路的二极管施加激励电压,得到所述二极管的电流;或,The PMU applies an excitation voltage to the diode of the ESD protection circuit of the target chip to obtain the current of the diode; or,
    所述PMU向所述目标芯片的ESD保护电路的二极管施加激励电流,得到所述二极管的电压。The PMU applies an excitation current to the diode of the ESD protection circuit of the target chip to obtain the voltage of the diode.
  6. 如权利要求1至5任一项所述的芯片温度测试方法,其特征在于,所述芯片温度测试方法还包括:The chip temperature testing method according to any one of claims 1 to 5, characterized in that the chip temperature testing method further includes:
    若所述目标芯片的当前温度与所述测试环境的环境温度不同,则所述PMU依据多个预设测试时间点对所述目标芯片进行测试,以得到所述目标芯片的ESD保护电路的二极管的多个所述预设测试时间点对应的电参数,并将多个所述电参数向所述DSP芯片发送; If the current temperature of the target chip is different from the ambient temperature of the test environment, the PMU tests the target chip according to multiple preset test time points to obtain the diodes of the ESD protection circuit of the target chip. The electrical parameters corresponding to the plurality of preset test time points, and sending the plurality of electrical parameters to the DSP chip;
    所述DSP芯片依据所述电参数从所述对应关系查询所述目标芯片的温度,并依据所述目标芯片的温度与所述环境温度相同的预设测试时间点更新所述稳定时间。The DSP chip queries the temperature of the target chip from the corresponding relationship based on the electrical parameters, and updates the stabilization time based on a preset test time point when the temperature of the target chip is the same as the ambient temperature.
  7. 如权利要求1至6任一项所述的芯片温度测试方法,其特征在于,所述ATE还包括测试模块,所述芯片温度测试方法还包括:The chip temperature testing method according to any one of claims 1 to 6, wherein the ATE further includes a testing module, and the chip temperature testing method further includes:
    若所述目标芯片的当前温度与所述测试环境的环境温度相等,则所述测试模块对所述目标芯片上电,进行性能或者可靠性的测试。If the current temperature of the target chip is equal to the ambient temperature of the test environment, the test module powers on the target chip to perform a performance or reliability test.
  8. 一种自动化测试设备,其特征在于,所述自动化测试设备包括参数测量单元PMU和数字信号处理DSP芯片;其中,若目标芯片处于未上电状态且在测试环境中的时间满足稳定时间,所述PMU用于获取所述目标芯片的ESD保护电路的二极管的电参数,并将所述电参数向所述DSP芯片发送,所述电参数是电参数,所述稳定时间描述了与所述目标芯片同类芯片的温度与测试环境的环境温度达到相同所需的时间;An automated test equipment, characterized in that the automated test equipment includes a parameter measurement unit PMU and a digital signal processing DSP chip; wherein, if the target chip is in an unpowered state and the time in the test environment meets the stabilization time, the The PMU is used to obtain the electrical parameters of the diode of the ESD protection circuit of the target chip, and send the electrical parameters to the DSP chip. The electrical parameters are electrical parameters, and the stabilization time describes the relationship with the target chip. The time required for the temperature of similar chips to reach the same temperature as the ambient temperature of the test environment;
    所述DSP芯片用于接收所述电参数,并依据所述电参数从预设的对应关系中查询所述目标芯片的当前温度,所述对应关系描述了所述目标芯片同类芯片的电参数随温度的变化关系。The DSP chip is used to receive the electrical parameters, and query the current temperature of the target chip from a preset corresponding relationship based on the electrical parameters. The corresponding relationship describes the electrical parameters of chips of the same type as the target chip. temperature change relationship.
  9. 如权利要求8所述的自动化测试设备,其特征在于,所述PMU获取的所述电参数为模拟量。The automated testing equipment of claim 8, wherein the electrical parameters obtained by the PMU are analog quantities.
  10. 如权利要求8或9所述的自动化测试设备,其特征在于,所述PMU还用于获取多个同类芯片的校准测试数据,并将所述校准测试数据向所述DSP芯片发送,其中,所述校准测试数据包括所述同类芯片的ESD保护电路的二极管接收的激励电压、所述同类芯片的多个温度及每个温度对应的所述二极管的电流;或,所述同类芯片的ESD保护电路的二极管接收的激励电流、所述同类芯片的多个温度及每个温度对应的所述二极管两端的电压;The automated test equipment according to claim 8 or 9, characterized in that the PMU is also used to obtain calibration test data of a plurality of similar chips and send the calibration test data to the DSP chip, wherein the The calibration test data includes the excitation voltage received by the diode of the ESD protection circuit of the similar chip, multiple temperatures of the similar chip and the current of the diode corresponding to each temperature; or, the ESD protection circuit of the similar chip The excitation current received by the diode, multiple temperatures of the similar chip and the voltage across the diode corresponding to each temperature;
    所述DSP芯片还用于接收所述校准测试数据,依据理想状态下的温度与电参数的对应关系确定所述测试数据中的目标数据;并依据所述目标数据确定所述对应关系。The DSP chip is also used to receive the calibration test data, determine the target data in the test data based on the corresponding relationship between the temperature and the electrical parameters under the ideal state; and determine the corresponding relationship based on the target data.
  11. 如权利要求8至10任一项所述的自动化测试设备,其特征在于,所述PMU还用于获取测试环境的同类芯片的稳定测试数据,并将所述稳定测试数据向所述DSP芯片发送,其中,所述测试环境提供环境温度,所述测试数据包括环境温度下,所述同类芯片在多个测试时间点对应的电参数;The automated test equipment according to any one of claims 8 to 10, characterized in that the PMU is also used to obtain stable test data of similar chips in the test environment, and send the stable test data to the DSP chip , wherein the test environment provides an ambient temperature, and the test data includes electrical parameters corresponding to the similar chips at multiple test time points under the ambient temperature;
    所述DSP芯片还用于接收所述稳定测试数据并依据所述稳定测试数据确定所述稳定时间。The DSP chip is also used to receive the stability test data and determine the stabilization time based on the stability test data.
  12. 如权利要求8至11任一项所述的自动化测试设备,其特征在于,所述PMU进一步用于向所述目标芯片的ESD保护电路的二极管施加激励电压,得到所述二极管的电流;或,The automated test equipment according to any one of claims 8 to 11, wherein the PMU is further used to apply an excitation voltage to the diode of the ESD protection circuit of the target chip to obtain the current of the diode; or,
    所述PMU进一步用于向所述目标芯片的ESD保护电路的二极管施加激励电流,得到所述二极管的电压。The PMU is further used to apply an excitation current to the diode of the ESD protection circuit of the target chip to obtain the voltage of the diode.
  13. 如权利要求8至12任一项所述的自动化测试设备,其特征在于,The automated testing equipment according to any one of claims 8 to 12, characterized in that,
    若所述目标芯片的当前温度与所述测试环境的环境温度不同,则所述PMU还用于依据多个预设测试时间点对所述目标芯片进行测试,以得到所述目标芯片的ESD保护电路的二极管的多个所述预设测试时间点对应的电参数,并将所述电参数向所述DSP芯片发送;If the current temperature of the target chip is different from the ambient temperature of the test environment, the PMU is also used to test the target chip according to multiple preset test time points to obtain the ESD protection of the target chip. Electrical parameters corresponding to multiple preset test time points of the diodes of the circuit, and sending the electrical parameters to the DSP chip;
    所述DSP还用于模块依据所述电参数及所述对应关系确定所述目标芯片的温度,并依据所述目标芯片的温度与所述环境温度相同的预设测试时间点更新所述稳定时间。The DSP is also used by the module to determine the temperature of the target chip based on the electrical parameters and the corresponding relationship, and update the stabilization time based on the preset test time point when the temperature of the target chip is the same as the ambient temperature. .
  14. 如权利要求8至13任一项所述的自动化测试设备,其特征在于,所述自动化测试设备还包括测试模块,若所述目标芯片的当前温度与所述测试环境的环境温度相等,则所述测 试模块对所述目标芯片,上电,进行性能或者可靠性的测试。The automated test equipment according to any one of claims 8 to 13, characterized in that the automated test equipment further includes a test module, if the current temperature of the target chip is equal to the ambient temperature of the test environment, then the Debriefing The test module powers on the target chip and performs performance or reliability testing.
  15. 一种自动化测试设备ATE,其特征在于,所述ATE包括:An automated test equipment ATE, characterized in that the ATE includes:
    参数测量单元PMU;Parameter measurement unit PMU;
    数字信号处理DSP芯片;Digital signal processing DSP chip;
    存储器,用于存储一个或多个程序;Memory, used to store one or more programs;
    当所述一个或多个程序被所述PMU或所述DSP芯片执行,使得所述PMU实现如权利要求1至7中任一项所述的芯片温度测试方法中所述PMU所执行的操作,所述DSP芯片实现如权利要求1至7中任一项所述的芯片温度测试方法中所述DSP芯片所执行的操作。When the one or more programs are executed by the PMU or the DSP chip, the PMU implements the operations performed by the PMU in the chip temperature testing method according to any one of claims 1 to 7, The DSP chip implements the operations performed by the DSP chip in the chip temperature testing method according to any one of claims 1 to 7.
  16. 一种计算机可读存储介质,其上存储有计算机程序,其特征在于,所述程序被处理器执行时,实现如权利要求1至7中任一项所述的芯片温度测试方法。 A computer-readable storage medium with a computer program stored thereon, characterized in that when the program is executed by a processor, the chip temperature testing method as described in any one of claims 1 to 7 is implemented.
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