WO2024000305A1 - 发光面板及其制备方法、发光装置 - Google Patents

发光面板及其制备方法、发光装置 Download PDF

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Publication number
WO2024000305A1
WO2024000305A1 PCT/CN2022/102479 CN2022102479W WO2024000305A1 WO 2024000305 A1 WO2024000305 A1 WO 2024000305A1 CN 2022102479 W CN2022102479 W CN 2022102479W WO 2024000305 A1 WO2024000305 A1 WO 2024000305A1
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Prior art keywords
light
emitting
layer
substrate
refractive index
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PCT/CN2022/102479
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English (en)
French (fr)
Inventor
孙中元
刘文祺
安澈
吴谦
黄维
焦志强
袁广才
李春延
徐晶晶
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2022/102479 priority Critical patent/WO2024000305A1/zh
Priority to CN202280001974.4A priority patent/CN117678342A/zh
Publication of WO2024000305A1 publication Critical patent/WO2024000305A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a light-emitting panel, a preparation method thereof, and a light-emitting device.
  • OLED Organic Light Emitting Diode
  • the present disclosure provides a light-emitting panel, including:
  • the light-emitting substrate including at least one light-emitting area and a non-light-emitting area surrounding the light-emitting area;
  • An encapsulation layer is provided on the light-emitting side of the light-emitting substrate.
  • the encapsulation layer includes a first film layer, the first film layer includes a plurality of pillars separated from each other, and a third film layer arranged in the gap between the pillars. a medium;
  • the refractive index of the cylinder and the first medium are different, and the volume ratio of the cylinder and the first medium gradually increases or decreases along the first direction, so that the first film layer
  • the equivalent refractive index gradually decreases along the first direction, which is the direction from the center of the light-emitting area to the edge of the light-emitting area.
  • the refractive index of the cylinder is greater than the refractive index of the first medium, and the volume ratio of the cylinder to the first medium gradually decreases along the first direction; or,
  • the refractive index of the cylinder is smaller than the refractive index of the first medium, and the volume ratio of the cylinder to the first medium gradually increases along the first direction.
  • the refractive index of the cylinder is greater than the refractive index of the first medium; along the first direction, the size of the cylinder gradually decreases or remains unchanged.
  • the light-emitting area has adjacent first and second sides, and the first side is greater than or equal to the second side;
  • the size of the cylinder decreases at a first rate
  • the size of the cylinder decreases at a second rate
  • the first rate is greater than or equal to the second rate.
  • the difference between the maximum equivalent refractive index and the minimum equivalent refractive index of the first film layer is greater than or equal to 0.4 and less than or equal to 1.5.
  • the orthographic projection of the plurality of pillars and the first medium on the light-emitting substrate covers the at least one light-emitting area and at least part of the non-light-emitting area.
  • the encapsulation layer further includes: a barrier layer and a spacer layer stacked between the light-emitting substrate and the first film layer, and the barrier layer is located close to the light-emitting substrate. ;
  • the first film layer further includes: a film layer main body located on a side of the plurality of pillars close to the light-emitting substrate, and the film layer main body and the pillars are an integral structure.
  • the barrier layer, the spacer layer and the first film layer each independently include at least one of the following materials: silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, Silicon carbon nitride, titanium oxide, zirconium oxide, parylene, acrylic series organic compounds and epoxy resin series organic compounds.
  • the light-emitting panel further includes:
  • a leveling layer arranged on the side of the first film layer facing away from the light-emitting substrate;
  • the first medium includes gas and/or the material of the filling layer filled in the column gap.
  • the refractive index of the cylinder is greater than or equal to 1.5 and less than or equal to 2.5; the refractive index of the first medium is greater than or equal to 1.0 and less than or equal to 1.5.
  • the thickness of the pillar is greater than or equal to 300 nanometers and less than or equal to 4000 nanometers; and/or,
  • the size of the pillar is greater than or equal to 60 nanometers and less than or equal to 400 nanometers; and/or,
  • the minimum distance between two adjacent pillars is greater than or equal to 20 nanometers and less than or equal to 400 nanometers.
  • the thickness of the encapsulation layer is less than or equal to 4000 nanometers.
  • the viewing angle range of the light-emitting panel is smaller than the viewing angle range of the light-emitting substrate, and the viewing angle range of the light-emitting panel is less than or equal to 30°.
  • the light-emitting panel includes a plurality of pixels, each of the pixels including a red sub-pixel, a blue sub-pixel and a green sub-pixel; the light-emitting panel further includes:
  • a color conversion layer arranged on the light exit side of the encapsulation layer, including:
  • a first color conversion pattern located at the red sub-pixel, is used to emit red light under excitation by incident light;
  • a second color conversion pattern located at the green sub-pixel for emitting green light under excitation by incident light
  • Transmission pattern located in the blue sub-pixel, used to transmit incident light
  • the incident light includes blue light.
  • the first color conversion pattern and the second color conversion pattern each independently include at least one of the following materials: quantum dots, rare earth materials, fluorescent materials and organic dyes.
  • the light-emitting panel further includes:
  • a color filter layer arranged on the light exit side of the color conversion layer, including:
  • a first color filter pattern located at the red sub-pixel, used to transmit red light incident on the first color filter pattern
  • a second color filter pattern located on the green sub-pixel, is used to transmit green light incident on the second color filter pattern
  • a third color filter pattern is located on the blue sub-pixel and is used to transmit blue light incident on the third color filter pattern.
  • the light-emitting substrate includes:
  • the light-emitting panel also includes:
  • a second base substrate is provided on the side of the color filter layer facing away from the color conversion layer;
  • a filling layer is provided between the encapsulation layer and the color conversion layer, and is used to bond the encapsulation layer and the color conversion layer.
  • the present disclosure provides a light-emitting device, including:
  • a driving integrated circuit configured to provide a driving signal to the light emitting panel
  • a power supply circuit configured to provide power to the light-emitting panel.
  • the present disclosure provides a method for preparing a light-emitting panel, including:
  • the light-emitting substrate including at least one light-emitting area and a non-light-emitting area surrounding the light-emitting area;
  • An encapsulation layer is formed on the light exit side of the light-emitting substrate.
  • the encapsulation layer includes a first film layer, the first film layer includes a plurality of pillars separated from each other, and a first film layer disposed in the gap between the pillars.
  • the equivalent refractive index gradually decreases along the first direction, which is the direction from the center of the light-emitting area to the edge of the light-emitting area.
  • the step of forming an encapsulation layer on the light exit side of the light-emitting substrate includes:
  • An encapsulating material layer is formed on the light-emitting side of the light-emitting substrate, and the orthographic projection of the encapsulating material layer on the light-emitting substrate covers the light-emitting substrate;
  • a metal layer is formed on the side of the packaging material layer facing away from the light-emitting substrate, and the orthographic projection of the metal layer on the light-emitting substrate covers the light-emitting substrate;
  • a protective adhesive layer is patterned on the side of the metal layer facing away from the light-emitting substrate;
  • the metal layer is etched to obtain a patterned metal layer
  • etching the packaging material layer to form the plurality of pillars Using the patterned metal layer as a mask, etching the packaging material layer to form the plurality of pillars;
  • the patterned metal layer is removed to form the first film layer; wherein the plurality of pillars and the first medium filled in the gaps between the pillars constitute the first film layer.
  • Figure 1 schematically shows a schematic cross-sectional structural view of the first light-emitting panel provided by the present disclosure
  • Figure 2 schematically shows a schematic cross-sectional structural diagram of the second light-emitting panel provided by the present disclosure
  • Figure 3 schematically shows a schematic plan view of an example of a first film layer
  • Figure 4 schematically shows a schematic plan view of a target area in the first film layer
  • Figure 5 schematically shows a cross-sectional structural diagram of a stacked light-emitting substrate, packaging layer and leveling layer;
  • Figure 6 schematically shows a cross-sectional structural diagram of another stacked light-emitting substrate, encapsulation layer and leveling layer;
  • Figure 7 schematically shows the brightness gain distribution curves of several lenses at different viewing angles
  • Figure 8 schematically shows the optical path structure of an equivalent aspheric lens
  • Figure 9 schematically shows beam simulation diagrams of two packaging layer structures
  • Figure 10 schematically shows a schematic diagram of a propagation path of light between the light-emitting substrate and the color conversion layer
  • Figure 11 schematically shows a schematic plan view of a light-emitting panel provided by the present disclosure
  • Figure 12 schematically shows a cross-sectional structural diagram of an example of a first color conversion pattern
  • Figure 13 schematically shows a cross-sectional structural diagram of an example of a second color conversion pattern
  • Figure 14 schematically shows a cross-sectional structural diagram of an example of a transmission pattern
  • FIG. 15 schematically shows a flow chart of a method for preparing a light-emitting panel provided by the present disclosure.
  • the present disclosure provides a light-emitting panel.
  • the light-emitting panel includes: a light-emitting substrate 11, which includes at least one light-emitting area and a non-light-emitting area surrounding the light-emitting area; and an encapsulation layer 12, which is provided on the light-emitting side of the light-emitting substrate 11 and encapsulates
  • the layer 12 includes a first film layer 13.
  • the first film layer 13 includes a plurality of columns 131 separated from each other, and a first medium 132 disposed in the gaps between the columns.
  • the refractive index of the cylinder 131 and the first medium 132 are different.
  • FIG. 3 a schematic plan view of an example of a first film layer is schematically shown.
  • the volume ratio of the cylinder 131 to the first medium 132 gradually increases or decreases along the first direction, so that the equivalent refractive index of the first film layer 13 gradually decreases along the first direction.
  • One direction is a direction from the center of the light-emitting area to the edge of the light-emitting area.
  • the volume ratio of the cylinder 131 to the first medium 132 refers to the ratio between the volume of the cylinder 131 and the volume of the first medium 132 .
  • the encapsulation layer 12 is used to prevent water and oxygen from intruding into the light-emitting substrate 11 .
  • the orthographic projection of the encapsulation layer 12 on the light-emitting substrate 11 can cover the entire light-emitting substrate 11 .
  • the cylinders 131 located in the target area are cylinders, of which N1 are (N1 is 2 in Figure 4)
  • the diameter of the cylinder is d2
  • there are N2 cylinders (N2 is 2 in Figure 4).
  • the diameter of the cylinder is d3, and the height of each cylinder is h.
  • the following takes the target area as an example to illustrate the volume ratio of the cylinder 131 to the first medium 132 and the equivalent refractive index of the first film layer 13 .
  • V S ⁇ h, where S is the orthographic projection area of the target area on the plane where the light-emitting substrate 11 is located.
  • the volume ratio of the cylinder 131 to the first medium 132 is V1/V2.
  • the refractive index is 132.
  • the volume V1 of the cylinder 131 is much larger than the volume V2 of the first medium 132, and the equivalent refractive index n of the first target area will be infinitely close to that of the cylinder 131.
  • the refractive index of the cylinder 131 and the first medium 132 are different, by setting the volume ratio of the cylinder 131 to the first medium 132 to gradually increase or decrease along the first direction, the equalization of the first film layer 13 can be achieved.
  • the effective refractive index gradually decreases along the first direction.
  • the microlens can converge the incident light, deflect the large viewing angle light emitted from the light-emitting area to a small viewing angle range, and reduce the lateral propagation of the light emitted from the light-emitting area, thereby avoiding crosstalk between sub-pixels of different colors. color.
  • microlenses mentioned below refer to a plurality of cylinders 131 corresponding to the same light-emitting area and the first medium 132 filled in the gaps between these cylinders.
  • the microlenses correspond to the light-emitting areas one-to-one.
  • transverse direction mentioned in the article refers to the direction parallel to the plane where the light-emitting substrate is located
  • longitudinal direction refers to the direction along the normal line of the light-emitting substrate
  • the inventor conducted optical simulations on the brightness gain of microlenses and aspherical lenses at different viewing angles, and the simulation results are shown in Figure 7.
  • the light-emitting substrate, aspherical lens and spherical lens are a comparative example
  • the microlens is an experimental example
  • h1 is the height of the cylinder 131 in the microlens.
  • microlenses can achieve the same effect as aspherical lenses, that is, the brightness gain is enhanced within a small viewing angle range, and the brightness gain beyond a certain viewing angle is greatly reduced.
  • the simulation results of microlens 1.5 ⁇ m ⁇ h1 ⁇ 3.5 ⁇ m show that when the viewing angle exceeds 15°, the brightness gain is greatly reduced. Comparing the simulation results of the light-emitting substrate and the microlens, it can be seen that the microlens can deflect the large viewing angle light emitted by the light emitting substrate to a small viewing angle range.
  • the microlens can be a planar structure with the same height everywhere, the simulation result shown in Figure 7 corresponds to a microlens height h1 ⁇ 3500nm, while the aspherical lens is a curved structure (its height ranges from 3000nm to 6000nm), so , compared with aspherical lenses, the use of microlens structures can significantly reduce the longitudinal distance between the light-emitting substrate 11 and the color conversion layer 15 or the color filter layer 18, thereby further reducing the lateral propagation of the emitted light and further improving the cross-color defect.
  • FIG. 9 the beam simulation diagram of the encapsulation layer with and without microlenses is shown.
  • the left picture in FIG. 9 is a beam simulation diagram without microlenses in the packaging layer 12
  • the right picture in FIG. 9 is a beam simulation diagram with microlenses in the packaging layer 12 .
  • the refractive index of the cylinder 131 is greater than the refractive index of the first medium 132 , and the volume ratio of the cylinder 131 to the first medium 132 gradually decreases along the first direction.
  • n n1 ⁇ (V1/V)+n2 ⁇ (V2/V)
  • V1/V2 of the cylinder 131 and the first medium 132 gradually decreases along the first direction hour
  • the equivalent refractive index n of the first film layer 13 may gradually change from n1 to n2 along the first direction. Since the refractive index n1 of the cylinder 131 is greater than the refractive index n2 of the first medium 132, the equivalent refractive index of the first film layer 13 can be gradually reduced along the first direction.
  • the size of the cylinder 131 can be gradually reduced along the first direction (the direction from the center of the light-emitting area to the edge of the light-emitting area). Small.
  • the center distance between two adjacent cylinders 131 may remain unchanged in the first direction, or may gradually increase, or the like.
  • the cylinder 131 is a cylinder with a circular surface parallel to the light-emitting substrate, and the diameter of the cylinder gradually decreases along the first direction.
  • the size of the cylinder 131 can remain unchanged along the first direction.
  • the center distance between two adjacent cylinders 131 may gradually increase in the first direction, and so on.
  • the refractive index of the cylinder 131 is smaller than the refractive index of the first medium 132 , and the volume ratio of the cylinder 131 to the first medium 132 gradually increases along the first direction.
  • n n1 ⁇ (V1/V)+n2 ⁇ (V2/V)
  • V1/V2 the ratio between the volume V1 of the cylinder 131 and the volume V2 of the first medium 132
  • the equivalent refractive index n of the first film layer 13 may gradually change from n2 to n1 along the first direction. Since the refractive index n1 of the cylinder 131 is smaller than the refractive index n2 of the first medium 132, the equivalent refractive index of the first film layer 13 can be gradually reduced along the first direction.
  • the size of the cylinder 131 may gradually increase or remain unchanged along the first direction.
  • the center distance between two adjacent cylinders 131 can remain unchanged or gradually decrease in the first direction, etc. .
  • the size and position of the cylinder 131 can be designed according to the refractive index distribution requirements.
  • the change of the cylinder size in the first direction and the change of the cylinder center distance in the first direction are not limited to the above-mentioned solutions, as long as it is ensured that the refractive index of the cylinder 131 is greater than the refractive index of the first medium 132 , the volume ratio of the cylinder 131 to the first medium 132 gradually decreases along the first direction, or when the refractive index of the cylinder 131 is smaller than the refractive index of the first medium 132 , the volume ratio of the cylinder 131 to the first medium 132 It suffices that the volume ratio gradually increases along the first direction.
  • the light-emitting area has adjacent first side s1 and second side s2, and the first side s1 is greater than or equal to the second side s2.
  • the size attenuation rate of the pillar 131 is the first rate; along the direction from the center of the light-emitting area to the second side s2, the size attenuation rate of the pillar 131 is the second rate. rate.
  • the first rate is greater than or equal to the second rate.
  • the first side s1 and the second side s2 may be two sides of the smallest circumscribed rectangle of the circle.
  • the first side s1 is equal to the second side.
  • the first rate is equal to the second rate.
  • the first side s1 is the long side of the rectangle, and the second side s2 is the short side of the rectangle.
  • the first side s1 is larger than the second side s2, correspondingly , the first rate is greater than the second rate.
  • the first side s1 and the second side s2 are two sides of the square.
  • the first side s1 is equal to the second side s2.
  • the first speed equal to the second rate.
  • the difference between the maximum equivalent refractive index and the minimum equivalent refractive index of the first film layer 13 is greater than or equal to 0.4 and less than or equal to 1.5. Further, the difference between the maximum equivalent refractive index and the minimum equivalent refractive index of the first film layer 13 may be greater than or equal to 0.4 and less than or equal to 0.9.
  • the maximum value of the equivalent refractive index is the equivalent refractive index at a position corresponding to the center of the light-emitting area in the first film layer 13 .
  • the minimum value of the equivalent refractive index is the equivalent refractive index at the position corresponding to the edge of the light-emitting area in the first film layer 13 .
  • the orthographic projection of the plurality of pillars 131 and the first medium 132 on the light-emitting substrate 11 covers at least one light-emitting area. That is, the orthographic projection of the plurality of pillars 131 and the first medium 132 on the light-emitting substrate 11 covers one or more light-emitting areas.
  • the orthographic projections of the plurality of pillars 131 and the first medium 132 on the light-emitting substrate 11 also cover at least part of the non-light-emitting area. Specifically, it may include: the orthographic projection of the plurality of pillars 131 and the first medium 132 on the light-emitting substrate 11 covers the edge area of the non-light-emitting area close to the light-emitting area, or the orthographic projection of the plurality of pillars 131 and the first medium 132 on the light-emitting substrate 11 Orthographic projection covers the entire non-illuminated area.
  • the light emitted from the light-emitting area is incident on the first film layer 13, and the illumination range on the first film layer 13 may be larger than the size of the light-emitting area.
  • the orthographic projection covers at least part of the non-luminous area, allowing the microlens corresponding to the luminous area to also converge the light beyond the luminous area, thereby converging more light into a small viewing angle range.
  • the thickness h1 of the pillar 131 is greater than or equal to 300 nanometers and less than or equal to 4000 nanometers.
  • the thickness h1 of the plurality of pillars 131 in the first film layer 13 may be equal.
  • the thickness h1 of the pillar 131 is greater than or equal to 1500 nanometers and less than or equal to 3500 nanometers.
  • the corresponding microlens can condense more light into a small viewing angle range.
  • the thickness h1 of the pillar 131 is greater than or equal to 300 nanometers and less than or equal to 1500 nanometers.
  • the stress of the film layer can be reduced, the warpage of the film layer can be avoided, and the material selection range of the first film layer 13 can be expanded, and materials with a larger refractive index such as silicon nitride can be selected.
  • the first film layer 13 may also include: a film body 133 located on the side of the plurality of pillars 131 close to the light-emitting substrate 11 , and the film body 133 and the pillars 131 are integrated. structure.
  • the thickness h1 of the pillar 131 is smaller than the thickness h2 of the first film layer 13 .
  • an etching process may be used to form a plurality of pillars 131 on the first film layer 13 .
  • the etching depth can be controlled to ensure that the etching depth is less than the thickness h2 of the first film layer 13. This can avoid the impact of other film layers on the equivalent refractive index and help to obtain an equivalent refractive index that meets the expected design. Effective refractive index.
  • the thickness h2 of the first film layer 13 is greater than or equal to 600 nanometers and less than or equal to 2000 nanometers.
  • the thickness h1 of the pillar 131 can be greater than or equal to 300 nanometers and less than or equal to 1500 nanometers.
  • the thickness h1 of the pillar 131 may also be equal to the thickness h2 of the first film layer 13, which is not limited in this disclosure.
  • the first film layer 13 includes at least one of the following materials: silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, silicon carbon nitride, titanium oxide, zirconium oxide, parylene, acrylic series organic matter and epoxy resin series organic compounds.
  • the first film layer 13 is made of inorganic material, which can better prevent water and oxygen from invading the light-emitting substrate.
  • the first film layer 13 is made of inorganic materials such as silicon nitride, titanium oxide, and zirconium oxide, which can form a column 131 with a larger refractive index.
  • the first film layer 13 is made of organic materials such as acrylic and epoxy resin, which can form a pillar 131 with a larger thickness.
  • the encapsulation layer 12 further includes: a barrier layer 121 and a spacer layer 122 laminated between the light-emitting substrate 11 and the first film layer 13 .
  • the barrier layer 121 is located close to the light-emitting substrate 11 .
  • the barrier layer 121 functions to prevent water and oxygen from entering the light-emitting substrate 11 .
  • the function of the spacer layer 122 is to improve the stress of the barrier layer 121, fill micro defects in the barrier layer 121, etc.
  • the barrier layer 121 and the spacer layer 122 By arranging the barrier layer 121 and the spacer layer 122 on the side of the first film layer 13 close to the light-emitting substrate 11, water and oxygen can be prevented from intruding into the light-emitting substrate 11 through the gap between the pillars, and water and oxygen can also be avoided during the process of preparing the pillars 131. Invades the light-emitting substrate 11 .
  • the first film layer 13 can be disposed far away from the light-emitting substrate 11 in the packaging layer 12 , that is, located on the top layer of the packaging layer 12 . This can protect the light-emitting substrate 11 to the greatest extent and reduce the risk of water and oxygen. Influence.
  • the total number of film layers of the barrier layer 121 and the spacer layer 122 stacked between the light-emitting substrate 11 and the first film layer 13 may be an even number or an odd number.
  • the barrier layer 121 and the spacer layer 122 may be arranged alternately, as shown in FIG. 5 .
  • one barrier layer 121 and one spacer layer 122 form a stacked unit.
  • the first film layer 13 is provided on a side of one or more stacked units facing away from the light-emitting substrate 11 .
  • a single stacking unit can be selected, for example, a layer of silicon oxynitride is used as the barrier layer 121, and a layer of acrylic series organic matter is used as the spacer layer 122.
  • multiple stacked units may be used, for example, silicon nitride is used as the barrier layer 121 and silicon carbon nitride is used as the spacer layer 122.
  • 2 to 8 nitride units may be stacked between the light-emitting substrate 11 and the first film layer 13. Stacked units composed of silicon and silicon carbon nitride.
  • the barrier layer 121 and the spacer layer 122 each independently include at least one of the following materials: silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, silicon carbon nitride, titanium oxide, zirconium oxide, poly(p-di) Toluene, acrylic series organic compounds and epoxy resin series organic compounds.
  • the inorganic material in the encapsulation layer 12 can be formed using a chemical vapor deposition process, and the organic material can be formed using an inkjet printing process.
  • the light-emitting panel further includes: a filling layer 14 disposed on the side of the first film layer 13 facing away from the light-emitting substrate 11 .
  • the first medium 132 includes a gas and/or a material filling the filler layer 14 in the pillar gap.
  • the refractive index of the filling layer 14 may be greater than 1.0 and less than or equal to the refractive index of the pillar 131 .
  • the material of the filling layer 14 can flow into the cylinder gap.
  • the first medium 132 is the material of the leveling layer 14 ; when the material of the leveling layer 14 partially fills the pillar gap, The first medium 132 includes a filling gas and a material that fills the layer 14 .
  • the adhesion force between the first film layer 13 and the leveling layer 14 can be improved due to the increased contact area.
  • the first medium 132 includes filling gas and the material of the filling layer 14
  • the equivalent refractive index, the refractive index of the cylinder, the volume of the cylinder, the refractive index of the filling gas, and the filling need to be considered.
  • the material viscosity of the filling layer 14 is relatively high (eg >5000cps), the material of the filling layer 14 cannot flow into the cylinder gap, as shown in Figure 5 .
  • the first medium 132 includes a filling gas.
  • the filling gas may include air, nitrogen, argon, helium and other gases filled in the column gap.
  • the refractive index of the cylinder 131 is greater than or equal to 1.5 and less than or equal to 2.5; the refractive index of the first medium 132 is greater than or equal to 1.0 and less than or equal to 1.5.
  • the orthographic projection shape of the cylinder 131 on the light-emitting substrate 11 may include at least one of the following: polygon, circle, ellipse, sector and other regular graphics and irregular graphics.
  • the pillar 131 may include a bottom surface close to the light-emitting substrate 11 and a top surface away from the light-emitting substrate 11 .
  • the orthographic projections of the bottom surface and the top surface on the light-emitting substrate 11 can completely overlap; or the orthographic projection of the top surface on the light-emitting substrate 11 is within the range of the orthographic projection of the bottom surface on the light-emitting substrate 11; and so on.
  • the viewing angle range of the light-emitting panel is smaller than the viewing angle range of the light-emitting substrate 11 .
  • the viewing angle range of the light-emitting panel is less than or equal to 30°. Further, the viewing angle range of the light-emitting panel may be less than or equal to 15°
  • the light-emitting substrate 11 includes: a first substrate substrate 16 , a plurality of switching elements T disposed on the first substrate substrate 16 , and a plurality of switching elements T Connected light emitting device 17.
  • the light-emitting device 17 is located in the light-emitting area
  • the packaging layer 12 is located on the light-emitting side of the light-emitting device.
  • the light-emitting device 17 is an organic light-emitting diode (OLED) or a quantum dot light-emitting diode (Quantum Dot Light-Emitting Diode, QLED).
  • OLED organic light-emitting diode
  • QLED Quantum Dot Light-Emitting Diode
  • the above-mentioned light-emitting panel may also include: a color conversion layer 15, which is provided on the light exit side of the encapsulation layer 12 and is used to receive incident light and emit a different color from the incident light. Light, the incident light is the light emitted by the light-emitting device.
  • the color conversion layer 15 is located on the side of the leveling layer 14 away from the light-emitting substrate 11, as shown in FIG. 1 or 2.
  • the light-emitting panel includes an effective light-emitting area DA and a frame area NDA located on at least one side of the effective light-emitting area.
  • the effective light emitting area DA may include a plurality of pixels.
  • FIG. 1 or Figure 2 shows a schematic cross-sectional structural diagram of a pixel in the effective light-emitting area DA. As shown in FIG. 1 or FIG. 2 , each pixel includes a red sub-pixel R, a blue sub-pixel B and a green sub-pixel G.
  • the plurality of light-emitting devices 17 may include a first light-emitting device LD1 located in the red sub-pixel R, a second light-emitting device LD2 located in the green sub-pixel G, and a third light-emitting device located in the blue sub-pixel B.
  • the sub-pixels and the light-emitting devices 17 can be arranged in one-to-one correspondence.
  • the incident light includes blue light.
  • the color conversion layer 15 may include: a first color conversion pattern CCP1 located in the red sub-pixel R for emitting red light under excitation by incident light.
  • the orthographic projection of the first color conversion pattern CCP1 on the first base substrate 16 can cover the orthographic projection of the light-emitting area of the first light-emitting device LD1 on the first base substrate 16 .
  • the color conversion layer 15 may also include: a second color conversion pattern CCP2 located in the green sub-pixel G for emitting green light under excitation by incident light.
  • the orthographic projection of the second color conversion pattern CCP2 on the first base substrate 16 can cover the orthographic projection of the light-emitting area of the second light-emitting device LD2 on the first base substrate 16 .
  • the color conversion layer 15 may also include: a transmission pattern TP located at the blue sub-pixel B for transmitting incident light.
  • the orthographic projection of the transmission pattern TP on the first base substrate 16 can cover the orthographic projection of the light-emitting area of the third light-emitting device LD3 on the first base substrate 16 .
  • the color conversion layer 15 includes a partition wall PW, and a plurality of color conversion patterns located in a plurality of openings defined by the partition wall PW.
  • the plurality of color conversion patterns may include: a first color conversion pattern CCP1, a second color conversion pattern CCP2, and a transmission pattern TP.
  • the first color conversion pattern CCP1 may emit light by converting or moving the peak wavelength of incident light to another specific peak wavelength.
  • the first color conversion pattern CCP1 may convert the emission light provided from the first light emitting device LD1 into red light having a peak wavelength in a range of about 610 nm to about 650 nm.
  • the first color conversion pattern CCP1 may include a first base resin R1 and a first color conversion material QD1 dispersed in the first base resin R1 , and may include first scattering particles dispersed in the first base resin R1 SP1.
  • the second color conversion pattern CCP2 may emit light by converting or moving the peak wavelength of incident light to another specific peak wavelength.
  • the second color conversion pattern CCP2 may convert the emission light provided from the second light emitting device LD2 into green light having a peak wavelength in the range of about 510 nm to about 550 nm.
  • the second color conversion pattern CCP2 may include a second base resin R2 and a second color conversion material QD2 dispersed in the second base resin R2, and may include second scattering particles dispersed in the second base resin R2 SP2.
  • the transmission pattern TP can transmit incident light, for example, has a transmittance of more than 90% for the peak wavelength of incident light.
  • the transmission pattern TP may transmit the emission light provided from the third light emitting device LD3.
  • the transmission pattern TP may include a third base resin R3 and third scattering particles SP3 dispersed in the third base resin R3.
  • the setting of the third scattering particle SP3 can expand the viewing angle range of the incident light, increase the light extraction of blue light, and improve the viewing angle uniformity between the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B.
  • the first color conversion material QD1 and the second color conversion material QD2 may include semiconductor nanocrystal materials, which may emit light of a specific color when electrons transition from the conduction band T to the valence band.
  • the quantum dots may have any shape as long as the shape is commonly used in the art, and may specifically be spherical, conical, multi-armed or cubic nanoparticles, or may be nanotubes, nanowires, nanofibers or nanoparticles. Particles etc.
  • the quantum dots may have a core-shell structure, which includes a core material and a shell material; the core-shell structure includes a nanocrystal core and a shell surrounding the core.
  • the shell of the quantum dots may serve as a protective layer for preventing chemical modification of the core and maintaining semiconductor properties and/or as a charging layer for imparting electrophoretic properties to the quantum dots.
  • the shell may have a single-layer structure or a multi-layer structure.
  • the interface between core and shell may have a concentration gradient in which the concentration of elements in the shell decreases toward the center of the core.
  • the core of the quantum dot may be selected from the group consisting of Group II-VI compounds, Group III-V compounds, Group IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.
  • the shells of quantum dots may include oxides of metallic or non-metallic materials, semiconductor compounds, or combinations thereof. Transition materials can be added between the core material and the shell material to achieve a gradual transition of the crystal lattice, effectively reducing the internal pressure caused by the quantum dot lattice defects, thereby further improving the luminous efficiency and stability of the quantum dots.
  • the Group II-VI compound may be selected from the group consisting of: CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and the group consisting of mixtures thereof Binary compounds; AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS And choose and ternary compounds selected from the group consisting of mixtures thereof; and HgZnTeS, CdZnSeS, Cd
  • the Group III-V compound may be selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof Binary compounds of the group; GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNAs, InNP, InNAs, InNSb, InPAs, InPSb, and selected from the group consisting of mixtures thereof Ternary compounds; and GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and quaternary compounds selected from the group consisting of mixtures thereof.
  • the Group III-V compound may be selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof Binary compounds of the group; GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNAs, InNP, InNAs, InNSb, InPAs, InPSb, and selected from the group consisting of mixtures thereof Ternary compounds; and GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and quaternary compounds selected from the group consisting of mixtures thereof.
  • the transition material may be a ternary alloy material.
  • the transition material may be a ternary alloy material.
  • the core material of the quantum dot includes CdSe and/or InP
  • the shell material includes ZnS.
  • core materials including InP as an example: surface defects of InP quantum dots form surface trap states.
  • ZnS By coating ZnS on the surface of InP quantum dots, forming a core-shell structure with InP as the core material and ZnS as the shell material can reduce the damage of the quantum dots. surface defects to optimize the luminous efficiency and stability of quantum dots.
  • the above is just an example of the nuclear material including InP. When the nuclear material includes CdSe, or the nuclear material includes CdSe and InP, the above rules are also complied with.
  • the quantum dot QD does not include cadmium (Cd).
  • the core material of the QD is InP and the shell material is a stack of ZnSe/ZnS; or for example, the core material of the QD is ZnTeSe and the shell material is ZnSe/ZnS.
  • Quantum dots may have dimensions less than 45 nanometers (nm), for example, 40 nm, 30 nm, 20 nm or less.
  • the size of the quantum dots is 4 nm to 20 nm, and may be, for example, 4 nm, 5 nm, 7 nm, 10 nm, 13 nm, 17 nm or 20 nm.
  • Quantum dots can adjust the color of emitted light according to their size, and therefore quantum dots can emit light of various colors, such as blue light, red light, green light, etc. Among them, the size of the red quantum dots and the size of the green quantum dots can be different.
  • the first color conversion material QD1 and the second color conversion material QD2 are not limited to the above-mentioned quantum dot materials.
  • the first color conversion material QD1 and the second color conversion material QD2 can also independently select quantum dots, rare earth materials, and fluorescent materials. and one or more of color conversion materials such as organic dyes.
  • quantum dot materials As a new type of luminescent material, quantum dot materials have the advantages of concentrated luminescence spectrum, high color gamut, high color purity, and the luminescent color can be easily adjusted through the size, structure or composition of the quantum dot material.
  • the quantum dot ink is sequentially processed by solution, spin coating or inkjet, and then further solidified into a film to form a quantum dot film layer, which can be used as a luminescent material for solid-state lighting and flat panel displays.
  • the pixel-level control of the OLED and the color enhancement characteristics of the quantum dots can be combined to obtain better display characteristics, while reducing power consumption and extending the length of the light-emitting panel. service life.
  • the light-emitting layers located in different sub-pixels can be formed on the entire surface. For example, an open mask can be used to simultaneously form the light-emitting layers located in different sub-pixels, thereby simplifying the preparation process.
  • the above-mentioned light-emitting device further includes: a color filter layer 18 disposed on the light exit side of the color conversion layer 15 .
  • the color filter layer 18 includes: a first color filter pattern CF1, located in the red sub-pixel R, used to transmit red light incident on the first color filter pattern CF1.
  • the color filter layer 18 includes: a second color filter pattern CF2 located in the green sub-pixel G for transmitting green light incident on the second color filter pattern CF2.
  • the color filter layer 18 includes: a third color filter pattern CF3, located in the blue sub-pixel B, used to transmit blue light incident to the third color filter pattern CF3. .
  • the above-mentioned light-emitting panel further includes: a second substrate 19 disposed on the side of the color filter layer 18 away from the color conversion layer 15 .
  • the filling layer 14 provided on the side of the encapsulation layer 12 away from the light-emitting substrate 11 is located between the encapsulation layer 12 and the color conversion layer 15 and is used to bond the encapsulation layer 12 and the color conversion layer 15 .
  • the longitudinal distance DH between the light-emitting substrate 11 and the color conversion layer 15 is large, when a sub-pixel needs to be lit, for example, when a red sub-pixel is lit, the light emitted by the first light-emitting device LD1.
  • the first color conversion pattern CCP1 located in the red sub-pixel it also propagates laterally to the second color conversion pattern CCP2 located in the green sub-pixel or the transmission pattern TP located in the blue sub-pixel, resulting in red light.
  • Mixing a certain amount of green light or blue light causes cross-color between pixels and a decrease in color gamut.
  • the larger the vertical distance DH value is, the farther the light emitted by the light-emitting substrate 11 will travel laterally, and the more serious the cross-color problem will be.
  • the thickness of the encapsulation layer 12 in the normal direction of the light-emitting substrate 11 is less than or equal to 4000 nanometers.
  • the longitudinal distance between the light-emitting substrate 11 and the color conversion layer 15 can be reduced, thereby reducing the lateral propagation distance of light emitted by the light-emitting substrate 11 , thereby reducing the occurrence of cross-color problems.
  • the barrier layer 121 and the spacer layer 122 may be made of materials that can be formed using a chemical vapor deposition process.
  • the barrier layer 121 may be made of at least one of the following: inorganic materials such as silicon nitride, silicon oxynitride, and aluminum oxide.
  • the spacer layer 122 may be made of at least one of the following materials: silicon carbon nitride, silicon oxynitride, aluminum oxide, silicon oxide, parylene and other materials.
  • the barrier layer 121 can be made of silicon nitride
  • the spacer layer 122 can be made of silicon carbon nitride.
  • the thickness of the barrier layer 121 may be 0.3um-0.8um
  • the thickness of the spacer layer 122 may be 0.3um-1.5um.
  • the total number of film layers of the barrier layer 121 and the spacer layer 122 can be set to 2 to 8 layers.
  • the total number of film layers may be an odd number, for example, a three-layer structure of silicon nitride-silicon carbonitride-silicon nitride is formed, and the first film layer 13 is located on the side of the three-layer structure away from the light-emitting substrate 11; the total number of film layers is also It can be an even number, for example, a four-layer structure of silicon nitride-silicon carbonitride-silicon nitride-silicon carbonitride is formed, and the first film layer 13 is located on the side of the four-layer structure away from the light-emitting substrate 11 .
  • the light-emitting panel provided by the present disclosure can be a lighting panel.
  • the light-emitting panel serves as a light source to realize the lighting function.
  • the light-emitting panel may be a backlight module in a liquid crystal display device, a lamp for internal or external lighting, or various signal lights.
  • the light-emitting panel provided by the present disclosure may be a display panel.
  • the light-emitting panel has the function of displaying images (ie, pictures).
  • the present disclosure also provides a light-emitting device, including: a light-emitting panel as provided in any embodiment; a driving integrated circuit configured to provide a driving signal to the light-emitting panel; and a power supply circuit configured to provide power to the light-emitting panel.
  • the light-emitting device has the advantages of a front light-emitting panel.
  • the light-emitting device may be a display or a product containing a display.
  • the display can be a flat panel display (Flat Panel Display, FPD), a microdisplay, etc. If divided according to whether the user can see the scene on the back of the display, the display can be a transparent display or an opaque display. Depending on whether the display can be bent or rolled, the display can be a flexible display or a normal display (which can be called a rigid display).
  • products containing displays may include: computers, televisions, billboards, laser printers with display functions, telephones, mobile phones, electronic paper, personal digital assistants (Personal Digital Assistant, PDA), laptop computers, digital cameras , tablets, laptops, navigators, camcorders, viewfinders, vehicles, large-area walls, theater screens or stadium signage, etc.
  • PDA Personal Digital Assistant
  • the present disclosure also provides a method for preparing a light-emitting panel.
  • the preparation method includes:
  • Step S01 Provide a light-emitting substrate 11, which includes at least one light-emitting area and a non-light-emitting area surrounding the light-emitting area.
  • Step S02 Form an encapsulation layer 12 on the light exit side of the light-emitting substrate 11.
  • the encapsulation layer 12 includes a first film layer 13.
  • the first film layer 13 includes a plurality of pillars 131 separated from each other, and a third pillar 131 disposed in the gap between the pillars.
  • a medium 132; the refractive index of the cylinder 131 and the first medium 132 is different, and the volume ratio of the cylinder 131 and the first medium 132 gradually increases or decreases along the first direction, so that the equivalent of the first film layer 13
  • the refractive index gradually decreases along a first direction, which is a direction from the center of the light-emitting area to the edge of the light-emitting area.
  • the light-emitting panel provided in any of the above embodiments can be prepared using the preparation method provided by the present disclosure.
  • step S02 may specifically include:
  • Step S11 Form an encapsulating material layer 161 on the light emitting side of the light-emitting substrate 11.
  • the orthographic projection of the encapsulating material layer 161 on the light-emitting substrate 11 covers the light-emitting substrate 11, as shown in Figure 15a.
  • Step S12 Form a metal layer 162 on the side of the encapsulation material layer 161 away from the light-emitting substrate 11.
  • the orthographic projection of the metal layer 162 on the light-emitting substrate 11 covers the light-emitting substrate 11, as shown in Figure b in Figure 15 .
  • the metal layer 162 may include aluminum, molybdenum, titanium/aluminum/titanium and other metal materials.
  • Step S13 Use a nanoimprint process to pattern and form a protective adhesive layer 163 on the side of the metal layer 162 facing away from the light-emitting substrate 11, as shown in Figure 15 c.
  • Step S14 Use the protective adhesive layer 163 as a mask to etch the metal layer 162 to obtain a patterned metal layer 162, as shown in figure d in Figure 15 .
  • the etching residual protective adhesive layer 163 can be peeled off.
  • Step S15 Using the patterned metal layer 162 as a mask, etch the packaging material layer 161 to form a plurality of pillars 131 and the main body of the film layer 133, as shown in Figure e in Figure 15 .
  • Step S16 Remove the patterned metal layer 162 to form the first film layer 13, as shown in figure f in Figure 15.
  • the first film layer 13 includes a plurality of pillars 131 and a first medium 132 filled in the gaps between the pillars.
  • step S16 a process that can etch the material of the metal layer 162 without damaging the material of the first film layer 13 can be selected to remove the patterned metal layer 162 , leaving only the pillars 131 .
  • the method for preparing the light-emitting panel shown in Figure 1 may include the following steps:
  • Step S21 Form a plurality of switching elements T on the first base substrate 16, then form a flat layer PLN on the side of the plurality of switching elements T facing away from the first base substrate 16, and then form a flat layer PLN on the side of the flat layer PLN facing away from the first substrate.
  • a first electrode 21 layer is formed on one side of the substrate 16, and then a pixel definition layer PDL is formed on the side of the first electrode 21 layer facing away from the first base substrate 16.
  • the pixel definition layer PDL is used to define and form multiple pixel openings.
  • the first electrode 21 layer includes a plurality of first electrodes 21, the first electrodes 21 correspond to the pixel openings one-to-one, and the orthographic projection of the first electrodes 21 on the first base substrate 16 covers the pixel openings at the corresponding positions in the first substrate 16.
  • the switching element T such as a thin film transistor is connected to the first electrode 21 through a via hole provided on the flat layer PLN.
  • the first substrate substrate 16 can be a flexible substrate such as polyimide or polyethylene terephthalate; it can also be a rigid substrate such as glass or silicon wafer.
  • Step S22 Using an evaporation process, the light-emitting functional layer 22 and the second electrode layer 23 are sequentially formed on the side of the first electrode 21 and the pixel definition layer PDL away from the first base substrate 16.
  • the light-emitting functional layer 22 may include one or more of an electron transport layer, an electron blocking layer, a hole transport layer, a hole blocking layer, an electron injection layer, a hole injection layer and a light emitting layer.
  • the second electrode layer 23 may include metal materials such as magnesium and silver, or metal oxide materials such as indium zinc oxide.
  • the second electrode layer 23 is a transparent or semi-transparent electrode layer.
  • the first electrode 21 , the light-emitting functional layer 22 and the second electrode layer 23 constitute the light-emitting device 17 .
  • Step S23 Form the barrier layer 121, the spacer layer 122 and the first film layer 13 in sequence on the side of the second electrode layer 23 away from the first base substrate 16 to obtain the encapsulation layer 12.
  • the first film layer 13 includes a plurality of pillars 131 and a first medium 132 filled in the gaps between the pillars 131 .
  • Step S24 Form the leveling layer 14 on the entire side of the packaging layer 12 away from the first base substrate 16.
  • Step S25 Sequentially form partition walls PW and multiple color conversion patterns located in the plurality of openings defined by the partition walls PW on the side of the leveling layer 14 away from the first base substrate 16 to obtain the color conversion layer 15;
  • Step S26 Form a quantum dot protective layer 110 on the side of the color conversion layer 15 away from the first substrate 16 to prevent water and oxygen from eroding the materials in the color conversion layer 15;
  • Step S27 sequentially form a black matrix BM and multiple color filter patterns located in multiple openings defined by the black matrix BM on the side of the quantum dot protective layer 110 facing away from the first base substrate 16, to obtain the color filter layer 18;
  • Step S28 Use the optical glue 10 to attach the cover protective layer 101 to the side of the color filter layer 18 away from the first base substrate 16 to obtain a light-emitting panel as shown in FIG. 1 .
  • the cover protective layer 101 may be rigid glass, or a flexible film such as polyimide or polyethylene terephthalate.
  • the electrode layer 23 and the encapsulation layer 12 are used to obtain the substrate LS in the light-emitting panel shown in Figure 2; the color filter layer 18, the color conversion layer 15 and the quantum dot protective layer are sequentially formed on the second substrate substrate 19 to obtain the substrate shown in Figure 2
  • the substrate CS in the light-emitting panel is shown; the substrate LS and the substrate CS can then be bonded using filler glue.
  • the sub-filling layer 14 formed by the filler glue is located between the encapsulation layer 12 and the measuring point protective layer, as shown in Figure 2 luminous panel.
  • the first base substrate 16 may be a rigid substrate such as glass or silicon wafer.
  • any reference signs placed between parentheses shall not be construed as limiting the claim.
  • the word “comprising” does not exclude the presence of elements or steps not listed in a claim.
  • the word “a” or “an” preceding an element does not exclude the presence of a plurality of such elements.
  • the present disclosure may be implemented by means of hardware comprising several different elements and by means of a suitably programmed computer. In the element claim enumerating several means, several of these means may be embodied by the same item of hardware.
  • the use of the words first, second, third, etc. does not indicate any order. These words can be interpreted as names.

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Abstract

发光面板及其制备方法、发光装置，涉及显示技术领域。发光面板，包括：发光基板，发光基板包括至少一个发光区域以及环绕发光区域的非发光区域；以及封装层，设置在发光基板的出光侧，封装层包括第一膜层，第一膜层包括相互分隔开的多个柱体，以及设置在柱体间隙的第一介质；其中，柱体与第一介质的折射率不同，柱体与第一介质的体积比沿第一方向逐渐增大或逐渐减小，以使第一膜层的等效折射率沿第一方向逐渐减小，第一方向为从发光区域的中心至发光区域的边缘的方向。

Description

发光面板及其制备方法、发光装置 技术领域
本公开涉及显示技术领域，特别是涉及一种发光面板及其制备方法、发光装置。
背景技术
有机发光二极管(Organic Light Emitting Diode，OLED)为主动发光器件，具有自发光、广视角、反应时间快、发光效率高、工作电压低及制程简单等优点，被誉为下一代“明星”发光器件。
概述
本公开提供了一种发光面板，包括：
发光基板，所述发光基板包括至少一个发光区域以及环绕所述发光区域的非发光区域；以及
封装层，设置在所述发光基板的出光侧，所述封装层包括第一膜层，所述第一膜层包括相互分隔开的多个柱体，以及设置在所述柱体间隙的第一介质；
其中，所述柱体与所述第一介质的折射率不同，所述柱体与所述第一介质的体积比沿第一方向逐渐增大或逐渐减小，以使所述第一膜层的等效折射率沿所述第一方向逐渐减小，所述第一方向为从所述发光区域的中心至所述发光区域的边缘的方向。
在一种可选的实现方式中，所述柱体的折射率大于所述第一介质的折射率，所述柱体与所述第一介质的体积比沿第一方向逐渐减小；或者，
所述柱体的折射率小于所述第一介质的折射率，所述柱体与所述第一介质的体积比沿所述第一方向逐渐增大。
在一种可选的实现方式中，所述柱体的折射率大于所述第一介质的折射率；沿所述第一方向，所述柱体的尺寸逐渐减小或者保持不变。
在一种可选的实现方式中，所述发光区域具有相邻的第一侧边和第二侧边，所述第一侧边大于或等于所述第二侧边；
沿所述发光区域的中心至所述第一侧边的方向，所述柱体的尺寸衰减速率为第一速率；
沿所述发光区域的中心至所述第二侧边的方向，所述柱体的尺寸衰减速率为第二速率；
其中，所述第一速率大于或等于所述第二速率。
在一种可选的实现方式中，所述第一膜层的等效折射率最大值与等效折射率最小值之间的差值大于或等于0.4，且小于或等于1.5。
在一种可选的实现方式中，所述多个柱体以及所述第一介质在所述发光基板上的正投影覆盖所述至少一个发光区域以及至少部分非发光区域。
在一种可选的实现方式中，所述封装层还包括：层叠设置在所述发光基板与所述第一膜层之间的阻隔层和间隔层，所述阻隔层靠近所述发光基板设置；
所述第一膜层还包括：膜层主体，位于所述多个柱体靠近所述发光基板的一侧，所述膜层主体与所述柱体为一体结构。
在一种可选的实现方式中，所述阻隔层、所述间隔层以及所述第一膜层各自独立地包括以下材料至少之一：氮化硅、氧化硅、氮氧化硅、氧化铝、硅碳氮、氧化钛、氧化锆、聚对二甲苯、亚克力系列有机物和环氧树脂系列有机物。
在一种可选的实现方式中，所述发光面板还包括：
填平层，设置在所述第一膜层背离所述发光基板的一侧；
其中，所述第一介质包括气体和/或填充在所述柱体间隙中的所述填平层的材料。
在一种可选的实现方式中，所述柱体的折射率大于或等于1.5，且小于或等于2.5；所述第一介质的折射率大于或等于1.0，且小于或等于1.5。
在一种可选的实现方式中，在所述发光基板的法线方向上，所述柱体的厚度大于或等于300纳米，且小于或等于4000纳米；和/或，
在平行于所述发光基板所在平面的方向上，所述柱体的尺寸大于或等于60纳米，且小于或等于400纳米；和/或，
相邻的两个所述柱体之间的最小距离大于或等于20纳米，且小于或等于400纳米。
在一种可选的实现方式中，在所述发光基板的法线方向上，所述封装层的厚度小于或等于4000纳米。
在一种可选的实现方式中，所述发光面板的视角范围小于所述发光基板的视角范围，所述发光面板的视角范围小于或等于30°。
在一种可选的实现方式中，所述发光面板包括多个像素，各所述像素包括红色子像素、蓝色子像素和绿色子像素；所述发光面板还包括：
颜色转换层，设置在所述封装层的出光侧，包括：
第一颜色转换图案，位于所述红色子像素，用于在入射光线的激发下发射红色光线；
第二颜色转换图案，位于所述绿色子像素，用于在入射光线的激发下发射绿色光线；以及
透射图案，位于所述蓝色子像素，用于对入射光线进行透射；
其中，所述入射光线包括蓝色光线。
在一种可选的实现方式中，所述第一颜色转换图案和所述第二颜色转换图案各自独立地包括以下材料至少之一：量子点、稀土材料、荧光材料和有机染料。
在一种可选的实现方式中，所述发光面板还包括：
滤色层，设置在所述颜色转换层的出光侧，包括：
第一滤色图案，位于所述红色子像素，用于对入射至所述第一滤色图案的红色光线进行透射；
第二滤色图案，位于所述绿色子像素，用于对入射至所述第二滤色图案的绿色光线进行透射；以及
第三滤色图案，位于所述蓝色子像素，用于对入射至所述第三滤色图案的蓝色光线进行透射。
在一种可选的实现方式中，所述发光基板包括：
第一衬底基板；
设置在所述第一衬底基板上的多个开关元件；以及
多个和所述开关元件连接的发光器件，所述发光器件位于所述发光区域内；其中，所述封装层位于所述发光器件的出光侧；
所述发光面板还包括：
第二衬底基板，设置在所述滤色层背离所述颜色转换层的一侧；以及
填平层，设置在所述封装层与所述颜色转换层之间，用于粘合所述封装层与所述颜色转换层。
本公开提供了一种发光装置，包括：
如任一项所述的发光面板；
驱动集成电路，被配置为向所述发光面板提供驱动信号；以及
供电电路，被配置为向所述发光面板提供电源。
本公开提供了一种发光面板的制备方法，包括：
提供发光基板，所述发光基板包括至少一个发光区域以及环绕所述发光区域的非发光区域；
在所述发光基板的出光侧形成封装层，所述封装层包括第一膜层，所述第一膜层包括相互分隔开的多个柱体，以及设置在所述柱体间隙的第一介质；所述柱体与所述第一介质的折射率不同，所述柱体与所述第一介质的体积比沿第一方向逐渐增大或逐渐减小，以使所述第一膜层的等效折射率沿所述第一方向逐渐减小，所述第一方向为从所述发光区域的中心至所述发光区域的边缘的方向。
在一种可选的实现方式中，所述在所述发光基板的出光侧形成封装层的步骤，包括：
在所述发光基板的出光侧形成封装材料层，所述封装材料层在所述发光基板上的正投影覆盖所述发光基板；
在所述封装材料层背离所述发光基板的一侧形成金属层，所述金属层在所述发光基板上的正投影覆盖所述发光基板；
采用纳米压印工艺，在所述金属层背离所述发光基板的一侧图案化形成保护胶层；
以所述保护胶层为掩膜版，对所述金属层进行刻蚀，得到图案化的金属层；
以所述图案化的金属层为掩膜版，对所述封装材料层进行刻蚀，形成所述多个柱体；
去除所述图案化的金属层，形成所述第一膜层；其中，所述多个柱体以及填充于所述柱体间隙的第一介质构成所述第一膜层。
上述说明仅是本公开技术方案的概述，为了能够更清楚了解本公开的技术手段，而可依照说明书的内容予以实施，并且为了让本公开的上述和其它目的、特征和优点能够更明显易懂，以下特举本公开的具体实施方式。
附图简述
为了更清楚地说明本公开实施例或相关技术中的技术方案，下面将对实施例或相关技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。需要说明的是，附图中的比例仅作为示意并不代表实际比例。
图1示意性地示出了本公开提供的第一种发光面板的剖面结构示意图；
图2示意性地示出了本公开提供的第二种发光面板的剖面结构示意图；
图3示意性地示出了一种第一膜层示例的平面结构示意图；
图4示意性地示出了第一膜层中的一个目标区域的平面结构示意图；
图5示意性地示出了一种层叠设置的发光基板、封装层以及填平层的剖面结构示意图；
图6示意性地示出了另一种层叠设置的发光基板、封装层以及填平层的剖面结构示意图；
图7示意性地示出了几种透镜在不同视角下的亮度增益分布曲线；
图8示意性地示出了一种等效非球面透镜的光路结构示意图；
图9示意性地示出了两种封装层结构的光束模拟图；
图10示意性地示出了光线在发光基板与颜色转换层之间的一种传播路径示意图；
图11示意性地示出了本公开提供的一种发光面板的平面结构示意图；
图12示意性地示出了一种第一颜色转换图案示例的剖面结构示意图；
图13示意性地示出了一种第二颜色转换图案示例的剖面结构示意图；
图14示意性地示出了一种透射图案示例的剖面结构示意图；
图15示意性地示出了本公开提供的一种发光面板的制备方法的流程示意图。
详细描述
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
本公开提供了一种发光面板，参照图1和图2示意性地示出了本公开提供的两个发光面板示例的剖面结构示意图。如图1或图2所示，该发光面板包括：发光基板11，发光基板11包括至少一个发光区域以及环绕发光区域的非发光区域；以及封装层12，设置在发光基板11的出光侧，封装层12包括第一膜层13，第一膜层13包括相互分隔开的多个柱体131，以及设置在柱体间隙的第一介质132。
其中，柱体131与第一介质132的折射率不同。参照图3示意性地示出了一个第一膜层示例的平面结构示意图。如图3所示，柱体131与第一介质132的体积比沿第一方向逐渐增大或逐渐减小，以使第一膜层13的等效折射率沿第一方向逐渐减小，第一方向为从发光区域的中心至发光区域的边缘的方向。
柱体131与第一介质132的体积比，是指柱体131的体积与第一介质132的体积之间的比值。
封装层12用于避免水氧侵入发光基板11，封装层12在发光基板11上的正投影可以覆盖整个发光基板11。
在图3所示的平面图中选取长为H，宽为L的目标区域，如图4所示，位于该目标区域内的柱体131为圆柱体，其中N1个(图4中N1为2)圆柱体的直径为d2，N2个(图4中N2为2)圆柱体的直径为d3，各圆柱体的高度均为h。
下面以该目标区域为例，来说明柱体131与第一介质132的体积比，以及第一膜层13的等效折射率。
该目标区域的总体积：V＝S×h，其中，S为该目标区域在发光基板11所在平面上的正投影面积。
该目标区域内柱体131的体积：V1＝S1×h。其中，S1为该目标区域内的所有柱体131在发光基板11所在平面上的正投影面积，S1＝N1×π×(d2/2) 2+N2×π×(d3/2) 2。
该目标区域内第一介质132的体积：V2＝V-V1。
该目标区域内，柱体131与第一介质132的体积比，即V1/V2。
该目标区域内第一膜层13的等效折射率为：n＝n1×(V1/V)+n2×(V2/V)，其中，n1为柱体131的折射率，n2为第一介质132的折射率。
根据等效折射率的计算公式，可以看出，在柱体131的折射率n1与第一介质132的折射率n2不相等的情况下，通过调整柱体131与第一介质132的体积比在不同区域的数值，可以调节第一膜层13在不同区域的等效折射率。
例如，在第一膜层13的第一目标区域内，柱体131的体积V1远远大于第一介质132的体积V2，第一目标区域的等效折射率n将会无限接近柱体131的折射率n1；在第一膜层13的第二目标区域内，柱体131的体积V1远远小于第一介质132的体积V2，第二目标区域的等效折射率n将会无限接近第一介质132的折射率n2。
由于柱体131与第一介质132的折射率不同，因此，通过设置柱体131与第一介质132的体积比沿第一方向逐渐增大或逐渐减小，可以实现第一膜层13的等效折射率沿第一方向逐渐减小。
本公开中，由于第一膜层13的等效折射率沿第一方向逐渐减小，因此，与同一个发光区域对应的多个柱体131以及填充于这些柱体间隙中的第一介质132相当于一个微透镜，微透镜可以对入射光线进行会聚，使发光区域发射的大视角光线偏转至小视角范围内，减少发光区域发射光线的横向传播，从而可以避免不同颜色子像素之间发生串色。
需要说明的是，下文提到的微透镜指的是与同一个发光区域对应的多个柱体131以及填充于这些柱体间隙中的第一介质132。微透镜与发光区域一一对应。
另外，文中所述的横向指的是平行于发光基板所在平面的方向，纵向指的是沿发光基板法线的方向。
发明人对微透镜以及非球面透镜的在不同视角的亮度增益分别进行了光学模拟，模拟结果如图7所示。在图7中，发光基板、非球面透镜和球面透镜为对比例，微透镜为实验例，h1为微透镜中柱体131的高度。
从图7可以看出，微透镜可以实现与非球面透镜相同的效果，即小视角范围内的亮度增益增强，超过某一视角的亮度增益大幅减弱。在图7中微透镜1.5μm≤h1≤3.5μm的模拟结果显示，当视角超过15°时，亮度增益大幅减弱。对比发光基板与微透镜的模拟结果可以看出，微透镜可以将发光基板发射的大视角光线偏转至小视角范围内。
参照图8示意性地示出了一种等效非球面透镜的光路结构示意图。由于光程＝n×d，在非球面透镜中，不同位置的折射率均为nt，通过在不同位置设置不同的透镜高度，来实现光程的变化。而在微透镜中，微透镜高度处处相等，通过设置微透镜的等效折射率从发光区域中心至发光区域边缘依次减小，同样可以实现光程的变化。因此，微透镜可以等效于非球面透镜，能对入射光线起到会聚的作用。
本公开中，由于微透镜可以为高度处处相等的平面结构，图7所示的仿真结果对应的微透镜高度h1≤3500nm，而非球面透镜为曲面结构(其高度范围为3000nm～6000nm)，因此，与非球面透镜相比，使用微透镜结构能够大幅减少发光基板11到颜色转换层15或滤色层18之间的纵向距离，从而可以进一步减少出射光线的横向传播，进一步改善串色不良。
参照图9示出了封装层设置微透镜与不设置微透镜的光束模拟图。图9中的左图为在封装层12中不设置微透镜的光束模拟图，图9中的右图为在封装层12中设置微透镜的光束模拟图。对比发现，通过在封装层12中设置微透镜，可以大幅缩小光线视角范围，起到明显的收束效果。
在一些实施方式中，柱体131的折射率大于第一介质132的折射率，柱体131与第一介质132的体积比沿第一方向逐渐减小。
根据等效折射率公式：n＝n1×(V1/V)+n2×(V2/V)，可以看出，当柱体131与第一介质132的体积比V1/V2沿第一方向逐渐减小时，第一膜层13的等效折射率n沿第一方向可以由n1逐渐变化至n2。由于柱体131的折射率 n1大于第一介质132的折射率n2，因此，可以实现第一膜层13的等效折射率沿第一方向逐渐减小。
在柱体131的折射率大于第一介质132的折射率的情况下，如图3所示，沿第一方向(从发光区域中心至发光区域边缘的方向)，柱体131的尺寸可以逐渐减小。为了确保柱体131与第一介质132的体积比沿第一方向逐渐减小，相邻的两个柱体131的中心间距在第一方向上可以保持不变，或者逐渐增大等等。
在图3中，柱体131为圆面平行于发光基板的圆柱体，圆柱体的直径沿第一方向逐渐减小。
在柱体131的折射率大于第一介质132的折射率的情况下，沿第一方向，柱体131的尺寸还可以保持不变。为了确保柱体131与第一介质132的体积比沿第一方向逐渐减小，相邻的两个柱体131的中心间距在第一方向上可以逐渐增大，等等。
在一些实施方式中，柱体131的折射率小于第一介质132的折射率，柱体131与第一介质132的体积比沿第一方向逐渐增大。
根据等效折射率公式：n＝n1×(V1/V)+n2×(V2/V)，可以看出，当柱体131体积V1与第一介质132的体积V2之间的比值V1/V2沿第一方向逐渐增大时，第一膜层13的等效折射率n沿第一方向可以由n2逐渐变化至n1。由于柱体131的折射率n1小于第一介质132的折射率n2，因此，可以实现第一膜层13的等效折射率沿第一方向逐渐减小。
在柱体131的折射率小于第一介质132的折射率的情况下，沿第一方向，柱体131的尺寸可以逐渐增大或者保持不变。为了确保柱体131与第一介质132的体积比沿第一方向逐渐增大，相应地，相邻的两个柱体131的中心间距在第一方向上可以保持不变或者逐渐减小等等。
在具体实现中，可以根据折射率的分布需求，来设计柱体131的尺寸和位置。柱体尺寸在第一方向上的变化，以及柱体中心间距在第一方向上的变化不仅限于上述的几种方案，只要确保在柱体131的折射率大于第一介质132的折射率的情况下，柱体131与第一介质132的体积比沿第一方向逐渐减小，或者在柱体131的折射率小于第一介质132的折射率的情况下，柱体131与第一介质132的体积比沿第一方向逐渐增大即可。
在一些实施方式中，如图3所示，发光区域具有相邻的第一侧边s1和第二侧边s2，第一侧边s1大于或等于第二侧边s2。沿发光区域的中心至第一侧边s1的方向，柱体131的尺寸衰减速率为第一速率；沿发光区域的中心至第二侧边s2的方向，柱体131的尺寸衰减速率为第二速率。
其中，第一速率大于或等于第二速率。
当发光区域的形状为圆形时，第一侧边s1和第二侧边s2可以为圆形的最小外接矩形的两个侧边，这种情况下，第一侧边s1等于第二侧边s2，相应地，第一速率等于第二速率。
当发光区域的形状为长方形时，第一侧边s1为长方形的长边，第二侧边s2为长方形的短边，这种情况下，第一侧边s1大于第二侧边s2，相应地，第一速率大于第二速率。
当发光区域的形状为正方形时，第一侧边s1和第二侧边s2为正方形的两个边，这种情况下，第一侧边s1等于第二侧边s2，相应地，第一速率等于第二速率。
在一些实施方式中，第一膜层13的等效折射率最大值与等效折射率最小值之间的差值大于或等于0.4，且小于或等于1.5。进一步地，第一膜层13的等效折射率最大值与等效折射率最小值之间的差值可以大于或等于0.4，且小于或等于0.9。
其中，等效折射率最大值为第一膜层13中与发光区域中心对应位置处的等效折射率。等效折射率最小值为第一膜层13中与发光区域边缘对应位置处的等效折射率。
在一些实施方式中，如图3所示，多个柱体131以及第一介质132在发光基板11上的正投影覆盖至少一个发光区域。即，多个柱体131以及第一介质132在发光基板11上的正投影覆盖一个或多个发光区域。
进一步地，如图3所示，多个柱体131以及第一介质132在发光基板11上的正投影还覆盖至少部分非发光区域。具体可以包括：多个柱体131以及第一介质132在发光基板11上的正投影覆盖非发光区域靠近发光区域的边缘区域，或者多个柱体131以及第一介质132在发光基板11上的正投影覆盖整个非发光区域。
由发光区域出射的光线入射至第一膜层13上，在第一膜层13上的照射范围可能大于发光区域的尺寸，通过设置多个柱体131以及第一介质132在发光基板11上的正投影覆盖至少部分非发光区域，可以使与发光区域对应的微透镜能够对超出发光区域部分的光线也起到会聚的作用，从而使更多的光线会聚到小视角范围内。
在一些示例中，参照图5，在发光基板11的法线方向上，柱体131的厚度h1大于或等于300纳米，且小于或等于4000纳米。
可选地，第一膜层13中的多个柱体131的厚度h1可以相等。
可选地，柱体131的厚度h1大于或等于1500纳米，且小于或等于3500纳米。当柱体131厚度h1位于该范围内时，对应的微透镜可以将更多的光线会聚到小视角范围内。
如图7所示，对比1.5μm≤h1≤3.5μm和0.3μm≤h1≤1.5μm两种不同厚度范围的微透镜模拟结果，可以看出，1.5μm≤h1≤3.5μm对应的微透镜在小视角范围内的亮度增益更强，可以将更大能量占比的光线会聚到小视角范围内。
可选地，柱体131的厚度h1大于或等于300纳米，且小于或等于1500纳米。当柱体131厚度h1位于该范围内时，可以减小膜层应力，避免膜层翘曲不良，扩大第一膜层13的材料选择范围，能够选用氮化硅等折射率较大的材料。
在一些实施方式中，如图5所示，第一膜层13还可以包括：膜层主体133，位于多个柱体131靠近发光基板11的一侧，膜层主体133与柱体131为一体结构。相应地，柱体131的厚度h1小于第一膜层13的厚度h2。
在具体实现中，可以采用刻蚀工艺在第一膜层13上形成多个柱体131。在实际工艺过程中，可以通过控制刻蚀深度，确保刻蚀深度小于第一膜层13的厚度h2，这样可以避免其它膜层对等效折射率产生影响，有助于获得符合预期设计的等效折射率。
示例性地，第一膜层13的厚度h2大于或等于600纳米，且小于或等于2000纳米，相应地，柱体131的厚度h1可以大于或等于300纳米，且小于或等于1500纳米。
需要说明的是，柱体131的厚度h1也可以等于第一膜层13的厚度h2，本公开对此不作限定。
在一些实施方式中，第一膜层13包括以下材料至少之一：氮化硅、氧化硅、氮氧化硅、氧化铝、硅碳氮、氧化钛、氧化锆、聚对二甲苯、亚克力系列有机物和环氧树脂系列有机物。
可选地，第一膜层13采用无机材料，可以更好地防止水氧侵入发光基板。
可选地，第一膜层13采用氮化硅、氧化钛以及氧化锆等无机材料，可以形成较大折射率的柱体131。
可选地，第一膜层13采用亚克力以及环氧树脂等有机材料，可以形成较大厚度的柱体131。
在一些实施方式中，如图5所示，封装层12还包括：层叠设置在发光基板11与第一膜层13之间的阻隔层121和间隔层122，阻隔层121靠近发光基板11设置。
其中，阻隔层121的作用为阻隔水氧进入发光基板11。间隔层122的作用为改善阻隔层121的应力，填充阻隔层121的微小缺陷等。
通过在第一膜层13靠近发光基板11的一侧设置阻隔层121和间隔层122，可以防止水氧通过柱体间隙侵入发光基板11，还可以避免在制备柱体131的工艺过程中水氧侵入发光基板11。
在具体实现中，如图5所示，第一膜层13在封装层12中可以远离发光基板11设置，即位于封装层12的顶层，这样可以最大程度地保护发光基板11，降低水氧的影响。
在具体实现中，层叠设置在发光基板11与第一膜层13之间的阻隔层121和间隔层122的总膜层数量可以为偶数，还可以为奇数。阻隔层121和间隔层122可以交替设置，如图5所示。
当总膜层数量为偶数时，一个阻隔层121和一个间隔层122构成一个堆叠单元。第一膜层13设置在一个或多个堆叠单元背离发光基板11的一侧。
依据不同产品的需求，可以选择单个堆叠单元，例如：使用一层氮氧化硅做阻隔层121，使用一层亚克力系列有机物做间隔层122。或者，使用多个堆叠单元，例如：使用氮化硅做阻隔层121，使用硅碳氮做间隔层122，可以 在发光基板11与第一膜层13之间层叠设置2至8个由氮化硅和硅碳氮构成的堆叠单元。
在一些实施方式中，阻隔层121和间隔层122各自独立地包括以下材料至少之一：氮化硅、氧化硅、氮氧化硅、氧化铝、硅碳氮、氧化钛、氧化锆、聚对二甲苯、亚克力系列有机物和环氧树脂系列有机物。
在具体实现中，封装层12中的无机材料可以采用化学气相沉积工艺形成，有机材料可以采用喷墨打印工艺形成。
在一些实施方式中，如图1或图2所示，发光面板还包括：填平层14，设置在第一膜层13背离发光基板11的一侧。相应地，第一介质132包括气体和/或填充在柱体间隙中的填平层14的材料。
可选地，填平层14的折射率可以大于1.0，且小于或等于柱体131的折射率。
如果填平层14的材料粘度较小(如＜300cps)，填平层14的材料能够流动到柱体间隙中。在填平层14的材料完全填充柱体间隙的情况下，如图6所示，第一介质132为填平层14的材料；在填平层14的材料部分填充柱体间隙的情况下，第一介质132包括填充气体和填平层14的材料。
当填平层14的材料完全填充柱体间隙时，由于接触面积增大，因此可以提高第一膜层13与填平层14之间的粘附力。
需要说明的是，当第一介质132包括填充气体和填平层14的材料时，在计算等效折射率时，需要考虑柱体的折射率、柱体的体积、填充气体的折射率、填充气体所占的体积、填平层14材料的折射率以及填平层14材料所占的体积。
如果填平层14的材料粘度较大(如＞5000cps)，填平层14的材料无法流动到柱体间隙中，如图5所示。这种情况下，第一介质132包括填充气体。
其中，填充气体可以包括填充在柱体间隙中的空气、氮气、氩气、氦气等气体。
在一些实施方式中，柱体131的折射率大于或等于1.5，且小于或等于2.5；第一介质132的折射率大于或等于1.0，且小于或等于1.5。
例如，柱体131可以采用氮化硅材料，折射率n1＝1.9，第一介质132可以为填充于柱体间隙中的空气，折射率n2＝1.0。
在一些实施方式中，参照图5，在平行于发光基板11所在平面的方向上，柱体131的尺寸di大于或等于60纳米，且小于或等于400纳米。其中，di＝d1,d2,……或dn。
在一些实施方式中，相邻的两个柱体131之间的最小距离di’大于或等于20纳米，且小于或等于400纳米。其中，di’＝d1’,d2’,……或dn’。
在一些实施方式中，柱体131在发光基板11上的正投影形状可以包括以下至少之一：多边形、圆形、椭圆形、扇形等规则图形和不规则图形。
柱体131可以包括靠近发光基板11的底面以及远离发光基板11的顶面。其中，底面和顶面在发光基板11上的正投影可以完全交叠；或者，顶面在发光基板11上的正投影位于底面在发光基板11上的正投影范围内；等等。
在一些实施方式中，发光面板的视角范围小于发光基板11的视角范围。
可选地，发光面板的视角范围小于或等于30°。进一步地，发光面板的视角范围可以小于或等于15°
在一些实施方式中，如图1或图2所示，发光基板11包括：第一衬底基板16，设置在第一衬底基板16上的多个开关元件T，以及多个和开关元件T连接的发光器件17。其中，发光器件17位于发光区域内，封装层12位于发光器件的出光侧。
可选地，发光器件17为有机发光二极管(Organic Light-Emitting Diode，OLED)，或者为量子点发光二极管(Quantum Dot Light-Emitting Diode，QLED)。
在一些实施方式中，如图1或图2所示，上述发光面板还可以包括：颜色转换层15，设置在封装层12的出光侧，用于接收入射光线，并发射与入射光线颜色不同的光线，入射光线为发光器件发射的光线。
当发光面板包括上述填平层14和颜色转换层15时，颜色转换层15位于填平层14背离发光基板11的一侧，如图1或图2所示。
可选地，如图11所示，发光面板包括有效发光区DA以及位于有效发光区至少一侧的边框区NDA。有效发光区DA可以包括多个像素。
图1或图2示出的是有效发光区DA内的一个像素的剖面结构示意图。如图1或图2所示，各像素包括红色子像素R、蓝色子像素B和绿色子像素G。
如图1或图2所示，多个发光器件17可以包括位于红色子像素R的第一发光器件LD1，位于绿色子像素G的第二发光器件LD2以及位于蓝色子像素B的第三发光器件LD3。子像素与发光器件17可以一一对应设置。
可选地，入射光线包括蓝色光线。
可选地，如图1或图2所示，颜色转换层15可以包括：第一颜色转换图案CCP1，位于红色子像素R，用于在入射光线的激发下发射红色光线。
其中，第一颜色转换图案CCP1在第一衬底基板16上的正投影可以覆盖第一发光器件LD1的发光区域在第一衬底基板16上的正投影。
可选地，如图1或图2所示，颜色转换层15还可以包括：第二颜色转换图案CCP2，位于绿色子像素G，用于在入射光线的激发下发射绿色光线。
其中，第二颜色转换图案CCP2在第一衬底基板16上的正投影可以覆盖第二发光器件LD2的发光区域在第一衬底基板16上的正投影。
可选地，如图1或图2所示，颜色转换层15还可以包括：透射图案TP，位于蓝色子像素B，用于对入射光线进行透射。
其中，透射图案TP在第一衬底基板16上的正投影可以覆盖第三发光器件LD3的发光区域在第一衬底基板16上的正投影。
示例性地，如图1或图2所示，颜色转换层15包括分隔壁PW，以及位于分隔壁PW限定的多个开口内的多个颜色转换图案。多个颜色转换图案可以包括：第一颜色转换图案CCP1、第二颜色转换图案CCP2以及透射图案TP。
第一颜色转换图案CCP1可以通过将入射光的峰值波长转换或移动到另一特定峰值波长来发光。第一颜色转换图案CCP1可以将从第一发光器件LD1提供的发射光转换为具有在大约610nm至大约650nm的范围内的峰值波长的红光。参照图12，第一颜色转换图案CCP1可以包括第一基础树脂R1和分散在第一基础树脂R1中的第一颜色转换材料QD1，并且可以包括分散在第一基础树脂R1中的第一散射粒子SP1。
第二颜色转换图案CCP2可以通过将入射光的峰值波长转换或移动到另一特定峰值波长来发光。第二颜色转换图案CCP2可以将从第二发光器件LD2提供的发射光转换为具有在大约510nm至大约550nm的范围内的峰值波长的绿光。参照图13，第二颜色转换图案CCP2可以包括第二基础树脂R2和 分散在第二基础树脂R2中的第二颜色转换材料QD2，并且可以包括分散在第二基础树脂R2中的第二散射粒子SP2。
透射图案TP可以对入射光进行透射，例如对入射光峰值波长具有超过90％的透射率。透射图案TP可以将从第三发光器件LD3提供的发射光进行透射。参照图14，透射图案TP可以包括第三基础树脂R3和分散在第三基础树脂R3中的第三散射粒子SP3。第三散射粒子SP3的设置可以扩大入射光线的视角范围，增加蓝光的光取出，提高红色子像素R、绿色子像素G以及蓝色子像素B之间的视角均一性。
其中，第一颜色转换材料QD1和第二颜色转换材料QD2可以包括半导体纳米晶体材料，可以在电子从导带T跃迁到价带的情况下发射特定颜色的光。量子点可以具有任何形状，只要该形状在本领域中是通常使用的，并且具体地可以是球形、锥形、多臂或立方体的纳米颗粒，或者可以是纳米管、纳米线、纳米纤维或纳米颗粒等。
在一些实施方式中，量子点可以具有核壳结构，核壳结构包括核材料和壳材料；该核壳结构包括纳米晶体的核和围绕核的壳。量子点的壳可以作为用于防止核的化学修饰和保持半导体特性的保护层和/或用于向量子点施加电泳特性的充电层。壳可以具有单层结构或多层结构。核与壳之间的界面可以具有壳中元素的浓度朝向核的中心减小的浓度梯度。量子点的核可以选自由下述组成的组：II-VI族化合物、III-V族化合物、IV-VI族化合物、IV族元素、IV族化合物及其组合。量子点的壳可以包括金属或非金属材料的氧化物、半导体化合物、或其组合。在核材料与壳材料之间可以加入过渡材料，实现晶格的逐步过渡，有效降低量子点晶格缺陷造成的内部压力，从而进一步提升量子点的发光效率和稳定性。
在一些实施方式中，II-VI族化合物可以选自由下述组成的组：CdSe、CdTe、ZnS、ZnSe、ZnTe、ZnO、HgS、HgSe、HgTe、MgSe、MgS以及选自由它们的混合物形成的组的二元化合物；AgInS、CuInS、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、MgZnSe、MgZnS以及选自由它们的混合物形成的组的三元化合物；以及HgZnTeS、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、 CdHgSTe、HgZnSeS、HgZnSeTe、HgZnSTe以及选自由它们的混合物形成的组的四元化合物。
在一些实施方式中，III-V族化合物可以选自由下述组成的组：GaN、GaP、GaAs、GaSb、AlN、AlP、AlAs、AlSb、InN、InP、InAs、InSb以及选自由它们的混合物形成的组的二元化合物；GaNP、GaNAs、GaNSb、GaPAs、GaPSb、AlNP、AlNAs、AlNSb、AlPAs、AlPSb、InGaP、InNAs、InNP、InNAs、InNSb、InPAs、InPSb以及选自由它们的混合物形成的组的三元化合物；以及GaAlNP、GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、InAlNAs、InAlNSb、InAlPAs、InAlPSb以及选自由它们的混合物形成的组的四元化合物。
在一些实施方式中，III-V族化合物可以选自由下述组成的组：GaN、GaP、GaAs、GaSb、AlN、AlP、AlAs、AlSb、InN、InP、InAs、InSb以及选自由它们的混合物形成的组的二元化合物；GaNP、GaNAs、GaNSb、GaPAs、GaPSb、AlNP、AlNAs、AlNSb、AlPAs、AlPSb、InGaP、InNAs、InNP、InNAs、InNSb、InPAs、InPSb以及选自由它们的混合物形成的组的三元化合物；以及GaAlNP、GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、InAlNAs、InAlNSb、InAlPAs、InAlPSb以及选自由它们的混合物形成的组的四元化合物。
在一些实施方式中，过渡材料可以为三元合金材料。通过三元合金材料控制量子点的光学性能，能够形成体积一致但发光频率不同的量子点，提升显示装置的色域覆盖度。
在一些实施方式中，量子点的核材料包括为CdSe和/或InP，壳材料为包括ZnS。以核材料包括InP为例：InP量子点的表面缺陷形成表面陷阱态，通过在InP量子点表面包附ZnS，形成以InP为核材料且以ZnS为壳材料的核壳结构可以降低量子点的表面缺陷，优化量子点的发光效率和稳定性。以上只是以核材料包括InP进行举例说明，核材料包括CdSe，或者核材料包括CdSe和InP的情况下，同样符合上述规则。
在一些实施方式中，量子点QD不包括镉(Cd)，例如QD的核材料为InP，壳材料为ZnSe/ZnS的叠层；或例如QD的核材料为ZnTeSe，壳材料为ZnSe/ZnS。
量子点可以具有小于45纳米(nm)的尺寸，例如，40nm、30nm、20nm或更小。在一些实施方式中，量子点的尺寸为4nm～20nm，示例性地，可以是4nm、5nm、7nm、10nm、13nm、17nm或20nm。量子点可以根据其尺寸调节发射光的颜色，并且因此量子点可以发射各种颜色的光，例如蓝光、红光、绿光等。其中，红色量子点的尺寸和绿色量子点的尺寸可以不同。
其中，第一颜色转换材料QD1和第二颜色转换材料QD2不仅限于上述的量子点材料，第一颜色转换材料QD1和第二颜色转换材料QD2还可以各自独立地选用量子点、稀土材料、荧光材料和有机染料等颜色转换材料中的一种或多种。
量子点材料作为一种新型发光材料，具有发光光谱集中、色域高、色纯度高、发光颜色可通过量子点材料的尺寸、结构或成分进行简易调节等优点。在实际应用中，量子点墨水依次经过溶液加工、旋涂或喷墨，之后进一步固化成膜，形成量子点膜层，可以作为固态照明和平板显示的发光材料。
当发光器件17为OLED，颜色转换层15选用量子点材料时，可以实现OLED的像素级控制以及量子点的颜色增强特性的结合，获得更好的显示特性，同时可以降低功耗，延长发光面板的使用寿命。另外，在制备多个发光器件17的过程中，位于不同子像素的发光层可以整面形成，例如可以采用开放式掩膜版，同步形成位于不同子像素的发光层，从而可以简化制备流程。
可选地，如图1或图2所示，上述发光器件还包括：滤色层18，设置在颜色转换层15的出光侧。
可选地，如图1或图2所示，滤色层18包括：第一滤色图案CF1，位于红色子像素R，用于对入射至第一滤色图案CF1的红色光线进行透射。
可选地，如图1或图2所示，滤色层18包括：第二滤色图案CF2，位于绿色子像素G，用于对入射至第二滤色图案CF2的绿色光线进行透射。
可选地，如图1或图2所示，滤色层18包括：第三滤色图案CF3，位于蓝色子像素B，用于对入射至第三滤色图案CF3的蓝色光线进行透射。
可选地，如图2所示，上述发光面板还包括：第二衬底基板19，设置在滤色层18背离颜色转换层15的一侧。
如图2所示，设置在封装层12背离发光基板11一侧的填平层14，位于封装层12与颜色转换层15之间，用于粘合封装层12与颜色转换层15。
如图10所示，如果发光基板11与颜色转换层15之间的纵向距离DH较大，当需要点亮子像素时，例如：点亮红色子像素时，第一发光器件LD1发射的光，除了沿纵向传播至位于红色子像素的第一颜色转换图案CCP1外，还会横向传播到位于绿色子像素的第二颜色转换图案CCP2或者位于蓝色子像素的透射图案TP中，造成红光中混有一定量的绿光或蓝光，导致像素间串色，色域下降。纵向距离DH值越大，发光基板11发射的光线横向传播的距离就会越远，串色问题越严重。
为了避免串色问题的发生，在一些实施方式中，在发光基板11的法线方向上，封装层12的厚度小于或等于4000纳米。
通过减薄封装层12的厚度，可以缩小发光基板11与颜色转换层15之间的纵向距离，进而减少发光基板11发射光线的横向传播距离，从而减少串色问题的发生。
为了实现较薄厚度的封装层12，阻隔层121和间隔层122可以选用能够采用化学气相沉积工艺成膜的材料。例如，阻隔层121可以选用以下至少之一：氮化硅、氮氧化硅以及氧化铝等无机材料。间隔层122可以选用以下至少之一：硅碳氮、氮氧化硅、氧化铝、氧化硅以及聚对二甲苯等材料。
示例性地，阻隔层121可以选用氮化硅，间隔层122可以选用硅碳氮。阻隔层121的厚度可以为0.3um～0.8um，间隔层122的厚度可以为0.3um～1.5um。阻隔层121和间隔层122的总膜层数可以设置2～8层。其中，总膜层数可以为奇数，例如形成氮化硅-硅碳氮-氮化硅三层结构，第一膜层13位于该三层结构背离发光基板11的一侧；总膜层数还可以为偶数，例如形成氮化硅-硅碳氮-氮化硅-硅碳氮四层结构，第一膜层13位于该四层结构背离发光基板11的一侧。
在一些实施方式中，本公开提供的发光面板可以为照明面板，此时，发光面板作为光源，实现照明功能。例如，发光面板可以是液晶显示装置中的背光模组，用于内部或外部照明的灯，或各种信号灯等。
在另一些实施例中，本公开提供的发光面板可以为显示面板，此时，发光面板具有显示图像(即画面)的功能。
需要说明的是，在实际工艺中，由于工艺条件的限制或其他因素，上述各特征中的相同并不能完全相同，可能会有一些偏差，因此上述各特征之间的相同关系只要大致满足上述条件即可，均属于本公开的保护范围。例如，上述相同可以是在误差允许范围之内所允许的相同。
本公开还提供了一种发光装置，包括：如任一实施例提供的发光面板；驱动集成电路，被配置为向发光面板提供驱动信号；以及供电电路，被配置为向发光面板提供电源。
本领域技术人员可以理解，该发光装置具有前面发光面板的优点。
其中，发光装置可以为显示器或包含显示器的产品。其中，显示器可以是平板显示器(Flat Panel Display，FPD)，微型显示器等。若按照用户能否看到显示器背面的场景划分，显示器可以是透明显示器或不透明显示器。若按照显示器能否弯折或卷曲，显示器可以是柔性显示器或普通显示器(可以称为刚性显示器)。示例性地，包含显示器的产品可以包括：计算机、电视、广告牌、具有显示功能的激光打印机、电话、手机、电子纸、个人数字助理(Personal Digital Assistant，PDA)、膝上型计算机、数码相机、平板电脑、笔记本电脑、导航仪、便携式摄录机、取景器、车辆、大面积墙壁、剧院的屏幕或体育场标牌等。
本公开还提供了一种发光面板的制备方法，参照图1或图2，该制备方法包括：
步骤S01：提供发光基板11，发光基板11包括至少一个发光区域以及环绕发光区域的非发光区域。
步骤S02：在发光基板11的出光侧形成封装层12，封装层12包括第一膜层13，第一膜层13包括相互分隔开的多个柱体131，以及设置在柱体间隙的第一介质132；柱体131与第一介质132的折射率不同，柱体131与第一介质132的体积比沿第一方向逐渐增大或逐渐减小，以使第一膜层13的等效折 射率沿第一方向逐渐减小，第一方向为从发光区域的中心至发光区域的边缘的方向。
采用本公开提供的制备方法可以制备得到上述任一实施例提供的发光面板。
在一些示例中，参照图15，步骤S02具体可以包括：
步骤S11：在发光基板11的出光侧形成封装材料层161，封装材料层161在发光基板11上的正投影覆盖发光基板11，如图15中的a图所示。
步骤S12：在封装材料层161背离发光基板11的一侧形成金属层162，金属层162在发光基板11上的正投影覆盖发光基板11，如图15中的b图所示。
其中，金属层162可以包括铝、钼、钛/铝/钛等金属材料。
步骤S13：采用纳米压印工艺，在金属层162背离发光基板11的一侧图案化形成保护胶层163，如图15中的c图所示。
步骤S14：以保护胶层163为掩膜版，对金属层162进行刻蚀，得到图案化的金属层162，如图15中的d图所示。
在得到图案化的金属层162之后，可以将刻蚀残余的保护胶层163剥离掉。
步骤S15：以图案化的金属层162为掩膜版，对封装材料层161进行刻蚀，形成多个柱体131和膜层主体133，如图15中的e图所示。
步骤S16：去除图案化的金属层162，形成第一膜层13，如图15中的f图所示。其中，第一膜层13包括多个柱体131以及填充于柱体间隙的第一介质132。
在步骤S16中，可以选用能够刻蚀金属层162材料，同时不损伤第一膜层13材料的工艺，将图案化的金属层162去除掉，只保留柱体131。
在一些实施方式中，图1所示的发光面板的制备方法可以包括以下步骤：
步骤S21：在第一衬底基板16上形成多个开关元件T，之后在多个开关元件T背离第一衬底基板16的一侧形成平坦层PLN，之后在平坦层PLN背离第一衬底基板16的一侧形成第一电极21层，之后在第一电极21层背离第一衬底基板16的一侧形成像素定义层PDL，像素定义层PDL用于限定形成多个像素开口。
其中，第一电极21层包括多个第一电极21，第一电极21与像素开口一一对应，且第一电极21在第一衬底基板16上的正投影覆盖对应位置的像素开口在第一衬底基板16上的正投影。开关元件T如薄膜晶体管与第一电极21通过设置在平坦层PLN上的过孔连接。
第一衬底基板16可以采用聚酰亚胺或者聚对苯二甲酸乙二脂等柔性基板；还可以采用玻璃或硅片等刚性基板。
步骤S22：采用蒸镀工艺，在第一电极21以及像素定义层PDL背离第一衬底基板16的一侧依次形成发光功能层22和第二电极层23。其中，发光功能层22可以包含电子传输层、电子阻挡层、空穴传输层、空穴阻挡层、电子注入层、空穴注入层以及发光层等膜层中的一个或多个。第二电极层23可以包括镁、银等金属材料，或者氧化铟锌等金属氧化物材料。第二电极层23为透明或半透明电极层。第一电极21、发光功能层22和第二电极层23构成发光器件17。
步骤S23：在第二电极层23背离第一衬底基板16的一侧依次形成阻隔层121、间隔层122以及第一膜层13，得到封装层12。第一膜层13包括多个柱体131以及填充于柱体131间隙的第一介质132。
步骤S24：在封装层12背离第一衬底基板16的一侧整面形成填平层14。
步骤S25：在填平层14背离第一衬底基板16的一侧依次形成分隔壁PW以及位于分隔壁PW限定的多个开口内的多个颜色转换图案，得到颜色转换层15；
步骤S26：在颜色转换层15背离第一衬底基板16的一侧形成量子点保护层110，用于防止水氧侵蚀颜色转换层15中的材料；
步骤S27：在量子点保护层110背离第一衬底基板16的一侧依次形成黑矩阵BM以及位于黑矩阵BM限定的多个开口内的多个滤色图案，得到滤色层18；
步骤S28：采用光学胶10将盖板保护层101贴附滤色层18背离第一衬底基板16的一侧，得到如图1所示的发光面板。盖板保护层101可以为刚性的玻璃，或者为聚酰亚胺、聚对苯二甲酸乙二脂等柔性膜。
在另一些实施方式中，参照图2，还可以在第一衬底基板16上依次形成多个开关元件T、平坦层PLN、第一电极21、像素定义层PDL、发光功能层 22、第二电极层23以及封装层12，得到图2所示发光面板中的基板LS；在第二衬底基板19上依次形成滤色层18、颜色转换层15和量子点保护层，得到图2所示所示发光面板中的基板CS；之后可以采用填充胶将基板LS和基板CS粘合起来，填充胶形成的子填平层14位于封装层12与量点保护层之间，得到图2所示的发光面板。
在该实施方式中，为了方便后续与第二衬底基板19对盒，第一衬底基板16可以采用玻璃或硅片等刚性基板。
本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、商品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、商品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、商品或者设备中还存在另外的相同要素。
以上对本公开所提供的一种发光面板及其制备方法、发光装置进行了详细介绍，本文中应用了具体个例对本公开的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本公开的方法及其核心思想；同时，对于本领域的一般技术人员，依据本公开的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本公开的限制。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本公开的其它实施方案。本公开旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由下面的权利要求指出。
应当理解的是，本公开并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本公开的范围仅由所附的权利要求来限制。
本文中所称的“一个实施例”、“实施例”或者“一个或者多个实施例”意味着，结合实施例描述的特定特征、结构或者特性包括在本公开的至少一个实施例中。此外，请注意，这里“在一个实施例中”的词语例子不一定全指同一个实施例。
在此处所提供的说明书中，说明了大量具体细节。然而，能够理解，本公开的实施例可以在没有这些具体细节的情况下被实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。
在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。单词“包含”不排除存在未列在权利要求中的元件或步骤。位于元件之前的单词“一”或“一个”不排除存在多个这样的元件。本公开可以借助于包括有若干不同元件的硬件以及借助于适当编程的计算机来实现。在列举了若干装置的单元权利要求中，这些装置中的若干个可以是通过同一个硬件项来具体体现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。
最后应说明的是：以上实施例仅用以说明本公开的技术方案，而非对其限制；尽管参照前述实施例对本公开进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本公开各实施例技术方案的精神和范围。

Claims (20)

  1. 一种发光面板，包括：
    发光基板，所述发光基板包括至少一个发光区域以及环绕所述发光区域的非发光区域；以及
    封装层，设置在所述发光基板的出光侧，所述封装层包括第一膜层，所述第一膜层包括相互分隔开的多个柱体，以及设置在所述柱体间隙的第一介质；
    其中，所述柱体与所述第一介质的折射率不同，所述柱体与所述第一介质的体积比沿第一方向逐渐增大或逐渐减小，以使所述第一膜层的等效折射率沿所述第一方向逐渐减小，所述第一方向为从所述发光区域的中心至所述发光区域的边缘的方向。
  2. 根据权利要求1所述的发光面板，其中，所述柱体的折射率大于所述第一介质的折射率，所述柱体与所述第一介质的体积比沿第一方向逐渐减小；或者，
    所述柱体的折射率小于所述第一介质的折射率，所述柱体与所述第一介质的体积比沿所述第一方向逐渐增大。
  3. 根据权利要求2所述的发光面板，其中，所述柱体的折射率大于所述第一介质的折射率；沿所述第一方向，所述柱体的尺寸逐渐减小或者保持不变。
  4. 根据权利要求3所述的发光面板，其中，所述发光区域具有相邻的第一侧边和第二侧边，所述第一侧边大于或等于所述第二侧边；
    沿所述发光区域的中心至所述第一侧边的方向，所述柱体的尺寸衰减速率为第一速率；
    沿所述发光区域的中心至所述第二侧边的方向，所述柱体的尺寸衰减速率为第二速率；
    其中，所述第一速率大于或等于所述第二速率。
  5. 根据权利要求1至4任一项所述的发光面板，其中，所述第一膜层的等效折射率最大值与等效折射率最小值之间的差值大于或等于0.4，且小于或等于1.5。
  6. 根据权利要求1至5任一项所述的发光面板，其中，所述多个柱体以及所述第一介质在所述发光基板上的正投影覆盖所述至少一个发光区域以及至少部分非发光区域。
  7. 根据权利要求1至6任一项所述的发光面板，其中，所述封装层还包括：层叠设置在所述发光基板与所述第一膜层之间的阻隔层和间隔层，所述阻隔层靠近所述发光基板设置；
    所述第一膜层还包括：膜层主体，位于所述多个柱体靠近所述发光基板的一侧，所述膜层主体与所述柱体为一体结构。
  8. 根据权利要求7所述的发光面板，其中，所述阻隔层、所述间隔层以及所述第一膜层各自独立地包括以下材料至少之一：氮化硅、氧化硅、氮氧化硅、氧化铝、硅碳氮、氧化钛、氧化锆、聚对二甲苯、亚克力系列有机物和环氧树脂系列有机物。
  9. 根据权利要求1至8任一项所述的发光面板，其中，所述发光面板还包括：
    填平层，设置在所述第一膜层背离所述发光基板的一侧；
    其中，所述第一介质包括气体和/或填充在所述柱体间隙中的所述填平层的材料。
  10. 根据权利要求1至9任一项所述的发光面板，其中，所述柱体的折射率大于或等于1.5，且小于或等于2.5；所述第一介质的折射率大于或等于1.0，且小于或等于1.5。
  11. 根据权利要求1至10任一项所述的发光面板，其中，在所述发光基板的法线方向上，所述柱体的厚度大于或等于300纳米，且小于或等于4000纳米；和/或，
    在平行于所述发光基板所在平面的方向上，所述柱体的尺寸大于或等于60纳米，且小于或等于400纳米；和/或，
    相邻的两个所述柱体之间的最小距离大于或等于20纳米，且小于或等于400纳米。
  12. 根据权利要求1至11任一项所述的发光面板，其中，在所述发光基板的法线方向上，所述封装层的厚度小于或等于4000纳米。
  13. 根据权利要求1至12任一项所述的发光面板，其中，所述发光面板的视角范围小于所述发光基板的视角范围，所述发光面板的视角范围小于或等于30°。
  14. 根据权利要求1至13任一项所述的发光面板，其中，所述发光面板包括多个像素，各所述像素包括红色子像素、蓝色子像素和绿色子像素；所述发光面板还包括：
    颜色转换层，设置在所述封装层的出光侧，包括：
    第一颜色转换图案，位于所述红色子像素，用于在入射光线的激发下发射红色光线；
    第二颜色转换图案，位于所述绿色子像素，用于在入射光线的激发下发射绿色光线；以及
    透射图案，位于所述蓝色子像素，用于对入射光线进行透射；
    其中，所述入射光线包括蓝色光线。
  15. 根据权利要求14所述的发光面板，其中，所述第一颜色转换图案和所述第二颜色转换图案各自独立地包括以下材料至少之一：量子点、稀土材料、荧光材料和有机染料。
  16. 根据权利要求14或15所述的发光面板，还包括：
    滤色层，设置在所述颜色转换层的出光侧，包括：
    第一滤色图案，位于所述红色子像素，用于对入射至所述第一滤色图案的红色光线进行透射；
    第二滤色图案，位于所述绿色子像素，用于对入射至所述第二滤色图案的绿色光线进行透射；以及
    第三滤色图案，位于所述蓝色子像素，用于对入射至所述第三滤色图案的蓝色光线进行透射。
  17. 根据权利要求16所述的发光面板，其中，所述发光基板包括：
    第一衬底基板；
    设置在所述第一衬底基板上的多个开关元件；以及
    多个和所述开关元件连接的发光器件，所述发光器件位于所述发光区域内；其中，所述封装层位于所述发光器件的出光侧；
    所述发光面板还包括：
    第二衬底基板，设置在所述滤色层背离所述颜色转换层的一侧；以及
    填平层，设置在所述封装层与所述颜色转换层之间，用于粘合所述封装层与所述颜色转换层。
  18. 一种发光装置，包括：
    如权利要求1至17任一项所述的发光面板；
    驱动集成电路，被配置为向所述发光面板提供驱动信号；以及
    供电电路，被配置为向所述发光面板提供电源。
  19. 一种发光面板的制备方法，包括：
    提供发光基板，所述发光基板包括至少一个发光区域以及环绕所述发光区域的非发光区域；
    在所述发光基板的出光侧形成封装层，所述封装层包括第一膜层，所述第一膜层包括相互分隔开的多个柱体，以及设置在所述柱体间隙的第一介质；所述柱体与所述第一介质的折射率不同，所述柱体与所述第一介质的体积比沿第一方向逐渐增大或逐渐减小，以使所述第一膜层的等效折射率沿所述第一方向逐渐减小，所述第一方向为从所述发光区域的中心至所述发光区域的边缘的方向。
  20. 根据权利要求19所述的制备方法，其中，所述在所述发光基板的出光侧形成封装层的步骤，包括：
    在所述发光基板的出光侧形成封装材料层，所述封装材料层在所述发光基板上的正投影覆盖所述发光基板；
    在所述封装材料层背离所述发光基板的一侧形成金属层，所述金属层在所述发光基板上的正投影覆盖所述发光基板；
    采用纳米压印工艺，在所述金属层背离所述发光基板的一侧图案化形成保护胶层；
    以所述保护胶层为掩膜版，对所述金属层进行刻蚀，得到图案化的金属层；
    以所述图案化的金属层为掩膜版，对所述封装材料层进行刻蚀，形成所述多个柱体；
    去除所述图案化的金属层，形成所述第一膜层；其中，所述多个柱体以及填充于所述柱体间隙的第一介质构成所述第一膜层。
PCT/CN2022/102479 2022-06-29 2022-06-29 发光面板及其制备方法、发光装置 WO2024000305A1 (zh)

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